Display device and method of manufacturing a display device

Abstract

A display device and a method of manufacturing a display device are provided. The display device includes a substrate including a contact region and a wire region, a first electrode extending in a first direction on the substrate, a first electrode pattern extending in the first direction on the substrate and spaced apart from the first electrode, a second electrode extending in the first direction on the substrate and located between the first electrode and the first electrode pattern, a second electrode pattern extending in the first direction on the substrate and located between the first electrode and the second electrode, and a first light emitting element located between the first electrode and the second electrode pattern in the contact region.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0066903, filed on June 3, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of this disclosure relate to a display device and a method of manufacturing a display device. Background Technology

[0004] With the development of multimedia technology, display devices have become increasingly important. Therefore, various types (or categories) of display devices are currently in use, such as, for example, organic light-emitting display devices and liquid crystal display (LCD) devices.

[0005] Display devices are used to display images and include display panels, such as, for example, organic light-emitting display panels and / or liquid crystal display panels. In these display panels, the light-emitting display panel may include light-emitting elements. For example, light-emitting diodes (LEDs) may include organic light-emitting diodes (OLEDs) that use organic materials as fluorescent materials and inorganic light-emitting diodes that use inorganic materials as fluorescent materials. Summary of the Invention

[0006] One aspect of the embodiments of this disclosure provides a display device capable of increasing the transmittance of light generated by and emitted from a light-emitting element, thereby improving brightness.

[0007] An aspect of the embodiments of this disclosure also provides a display device capable of reducing the resistance of a line by providing multiple conductive layers in the line region for transmitting electrical signals.

[0008] An aspect of the embodiments of this disclosure also provides a method for manufacturing a display device that prevents or reduces damage to contact electrodes caused by etchants during an etching process for forming a first pattern, wherein the first pattern comprises the same (e.g., substantially the same) material as the contact electrodes.

[0009] It should be noted that the features of this disclosure are not limited to those described above; and other features of this disclosure will be apparent to those skilled in the art from the following description.

[0010] According to embodiments of the present disclosure, a display device includes a substrate, a first electrode, a first electrode pattern, a second electrode, a second electrode pattern, a first light-emitting element, a first contact electrode, a second contact electrode, and a first pattern. The substrate includes a contact region and a line region. The first electrode is located on the substrate and extends in a first direction. The first electrode pattern is spaced apart from the first electrode on the substrate and extends in the first direction. The second electrode is located on the substrate between the first electrode and the first electrode pattern and extends in the first direction. The second electrode pattern is located on the substrate between the first electrode and the second electrode and extends in the first direction. The first light-emitting element is located in the contact region between the first electrode and the second electrode pattern. The first contact electrode is located in the contact region on the first electrode and contacts (e.g., physically contacts) a first end of the first light-emitting element (e.g., the end of the first light-emitting element opposite to the end on which the first semiconductor layer is disposed). The second contact electrode includes a first region and a second region. The first region is located in the contact region on the second electrode pattern and contacts (e.g., physically contacts) a second end of the first light-emitting element. The second region extends from the first region and is located in the line region. The first pattern is located in the second region of the line region.

[0011] In an exemplary embodiment, the first pattern is in physical contact with the second region.

[0012] In an exemplary embodiment, the first pattern comprises the same (e.g., substantially the same) material as the first contact electrode.

[0013] In an exemplary embodiment, the display device includes a second light-emitting element located in the contact area between the second electrode and the first electrode pattern.

[0014] In an exemplary embodiment, the display device includes a third contact electrode located on the second electrode in the contact region and in contact with a first end of the second light-emitting element (e.g., the end of the second light-emitting element provided with a first semiconductor layer), wherein the second contact electrode further includes a third region extending from the second region to be located on the first electrode pattern in the contact region and in contact (e.g., physical contact) with the second end of the second light-emitting element.

[0015] In an exemplary embodiment, the third contact electrode comprises the same (e.g., substantially the same) material as the first contact electrode.

[0016] In an exemplary embodiment, the display device includes an insulating layer located on a second contact electrode, wherein the insulating layer exposes at least a portion of the second region in the online region and covers the first region in the contact region.

[0017] In an exemplary embodiment, the first pattern is in physical contact with at least a portion of the second region exposed by the insulating layer.

[0018] In an exemplary embodiment, the upper surface of the second region is in direct contact (e.g., physical contact) with the lower surface of the first pattern.

[0019] In an exemplary embodiment, the display device includes an insulating layer located on a second contact electrode, wherein the insulating layer is situated in an online region between a second region and a first pattern, and includes a plurality of contact holes penetrating the insulating layer to expose a portion of the second region.

[0020] In an exemplary embodiment, the first pattern makes direct contact (e.g., physical contact) with the second region through a plurality of contact holes that penetrate the insulating layer.

[0021] In an exemplary embodiment, the thickness of the first contact electrode, the thickness of the second contact electrode, and the thickness of the first pattern are each in... to Within the range.

[0022] According to another exemplary embodiment of this disclosure, the display device includes a substrate, an electrode layer, a plurality of light-emitting elements, a first contact electrode, a second contact electrode, a third contact electrode, an insulating layer, and a first pattern. The electrode layer is located on the substrate and includes a first electrode, a first electrode pattern spaced apart from the first electrode, a second electrode located between the first electrode and the first electrode pattern, and a second electrode pattern located between the first electrode and the second electrode. The plurality of light-emitting elements are located on the electrode layer and include a first light-emitting element and a second light-emitting element, wherein two ends of the first light-emitting element are respectively located on the first electrode and the second electrode pattern, and two ends of the second light-emitting element are respectively located on the second electrode and the first electrode pattern. The first contact electrode is located on the first electrode to overlap with the first electrode and is adjacent to the first contact electrode of the first light-emitting element. A first end (e.g., the end of the first light-emitting element with the first semiconductor layer) is in contact (e.g., physical contact), a second contact electrode is located on the second electrode to overlap with the second electrode and to contact (e.g., physical contact) the first end of the second light-emitting element (e.g., the end of the second light-emitting element with the first semiconductor layer), a third contact electrode is located on the electrode layer and includes a first region, a second region and a third region, wherein the first region overlaps with the second electrode pattern and contacts (e.g., physical contact) the second end of the first light-emitting element, the second region overlaps with the first electrode pattern and contacts (e.g., physical contact) the second end of the second light-emitting element, and the third region connects the first region and the second region, an insulating layer is located on the third contact electrode, and a first pattern is located on the third region.

[0023] In an exemplary embodiment, the insulating layer covers the first region and the second region and exposes at least a portion of the third region.

[0024] In an exemplary embodiment, the first pattern is in physical contact with at least a portion of the third region exposed by the insulating layer.

[0025] In an exemplary embodiment, the third contact electrode comprises crystalline ITO, and wherein the first pattern comprises crystalline ITO and / or amorphous ITO.

[0026] According to another exemplary embodiment of the present disclosure, a method of manufacturing a display device includes: forming an electrode layer including a first electrode layer and a second electrode layer spaced apart from each other on a target substrate including a line region and a contact region, and disposing a plurality of light-emitting elements between the first electrode layer and the second electrode layer in the contact region; forming a contact electrode material pattern on the electrode layer; forming a contact electrode by performing heat treatment on the contact electrode material pattern; and forming a first pattern on the contact electrode in the line region.

[0027] In an exemplary embodiment, forming a contact electrode includes forming a contact electrode comprising crystalline ITO by performing a heat treatment on a contact electrode material pattern comprising amorphous ITO, wherein the heat treatment is performed for 10 to 20 minutes at a temperature in the range of 200°C to 270°C.

[0028] In an exemplary embodiment, the method includes forming an insulating layer on a contact electrode prior to forming a first pattern, wherein the insulating layer exposes at least a portion of the contact electrode in a line region, and wherein the first pattern is located on the at least a portion of the contact electrode exposed by the insulating layer.

[0029] In an exemplary embodiment, the first electrode layer includes a first electrode and a first electrode pattern spaced apart from the first electrode, wherein the second electrode layer includes a second electrode located between the first electrode and the first electrode pattern and a second electrode pattern located between the first electrode and the second electrode, wherein the contact electrode includes a first region located on the second electrode pattern in the contact region, a second region located on the first electrode pattern in the contact region, and a third region located between the first region and the second region in the online region, wherein the first pattern is located on the third region.

[0030] According to an exemplary embodiment of this disclosure, a display device may include a plurality of light-emitting elements, a first contact electrode, a second contact electrode, and a third contact electrode, as well as a first pattern. The display device may include a contact area and a line area. In the contact area, the plurality of light-emitting elements are in contact with the first, second, and third contact electrodes (e.g., physical contact), while in the line area, the plurality of light-emitting elements are not in contact with the first, second, and third contact electrodes. In the contact area, the first, second, and third contact electrodes may be spaced apart from each other, and in the line area, the third contact electrode and the first pattern may overlap each other and be in direct contact (e.g., physical contact). Therefore, the thickness of the conductive layer (e.g., the third contact electrode and the first pattern) transmitting electrical signals in the line area may be greater than the thickness of the conductive layer (e.g., the conductive layer forming the first, second, and third contact electrodes) in contact with the light-emitting elements (e.g., physical contact), and therefore, the line may have lower resistance in the line area. Thus, the transmittance of light generated and emitted by the light-emitting elements in the contact area can be increased to increase the brightness of the display device in the contact area, and the resistance of the line in the line area transmitting electrical signals can be reduced.

[0031] It should be noted that the effects of this disclosure are not limited to those described above, and other effects of this disclosure will be apparent to those skilled in the art from the following description. Attached Figure Description

[0032] The above and other aspects and features of the present disclosure will become more apparent from the exemplary embodiments described in more detail with reference to the accompanying drawings, in which:

[0033] Figure 1 This is a plan view of a display device according to an exemplary embodiment of the present disclosure.

[0034] Figure 2 It is a plan view showing the layout of the relative positional relationships between the electrode layer and multiple embankments in a pixel.

[0035] Figure 3 It is a plan view showing the layout used to illustrate the relative positional relationships of the electrode layer, the first contact electrode, the second contact electrode, the third contact electrode, and the first pattern in a pixel.

[0036] Figure 4 It shows along Figure 2 and Figure 3 A cross-sectional view of an example display device taken by lines Qa-Qa' and Qb-Qb'.

[0037] Figure 5 This is a perspective view of a light-emitting element according to an exemplary embodiment of the present disclosure.

[0038] Figure 6 yes Figure 4 An enlarged sectional view of region P1.

[0039] Figure 7 yes Figure 4 An enlarged cross-sectional view of region P2.

[0040] Figure 8 and Figure 9 This is a cross-sectional view illustrating some processing steps in manufacturing a display device according to an exemplary embodiment of the present disclosure.

[0041] Figure 10 It is shown in Figure 8 and Figure 9 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0042] Figure 11 A cross-sectional view is shown, illustrating a portion of the manufacturing process steps of a display device according to an exemplary embodiment of the present disclosure.

[0043] Figure 12 It is shown in Figure 11 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0044] Figure 13 and Figure 14 This is a cross-sectional view illustrating some processing steps in manufacturing a display device according to an exemplary embodiment of the present disclosure.

[0045] Figure 15 It is shown in Figure 14 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0046] Figure 16 A cross-sectional view is shown, illustrating a portion of the manufacturing process steps of a display device according to an exemplary embodiment of the present disclosure.

[0047] Figure 17 It is shown in Figure 16 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0048] Figure 18 A cross-sectional view is shown, illustrating a portion of the manufacturing process steps of a display device according to an exemplary embodiment of the present disclosure.

[0049] Figure 19 It is shown in Figure 18 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0050] Figure 20 A cross-sectional view is shown, illustrating a portion of the manufacturing process steps of a display device according to an exemplary embodiment of the present disclosure.

[0051] Figure 21 This is a plan view illustrating the relative arrangement of the light-emitting element, multiple contact electrodes, and a first pattern according to another exemplary embodiment.

[0052] Figure 22 This is a plan view illustrating the relative arrangement of the light-emitting element, the plurality of contact electrodes, and the first pattern according to yet another exemplary embodiment.

[0053] Figure 23 This is a plan view illustrating the relative arrangement of the light-emitting element, the plurality of contact electrodes, and the first pattern according to yet another exemplary embodiment.

[0054] Figure 24 It is along Figure 23 A cross-sectional view of the display device taken by line XXIV-XXIV'.

[0055] Figure 25 It shows along Figure 2 and Figure 3 Another example of a display device is a cross-sectional view taken by lines Qa-Qa' and Qb-Qb'. Detailed Implementation

[0056] The subject matter of this disclosure will now be described more fully below with reference to the accompanying drawings, in which exemplary embodiments of this disclosure are illustrated. However, the subject matter of this disclosure may be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art.

[0057] It should also be understood that when a layer is referred to as being "on" another layer or substrate, it may be directly on that other layer or substrate, or there may be an intervening layer. Conversely, when an element is referred to as being "directly on another element," there is no intervening element.

[0058] Throughout the specification, the same reference numerals indicate the same components. In the accompanying drawings, the thickness of layers and regions may be exaggerated for clarity.

[0059] In the following description, exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0060] Figure 1 This is a plan view of a display device according to an exemplary embodiment of the present disclosure.

[0061] refer to Figure 1The display device 10 displays moving or still images. The display device 10 can refer to any suitable electronic device that provides a display screen. For example, the display device 10 may include a television, laptop computer, monitor, electronic billboard, Internet of Things device, mobile phone, smartphone, tablet PC, electronic watch, smartwatch, watch phone, head-mounted display device, mobile communication terminal, electronic notebook, e-book reader, portable multimedia player (PMP), navigation device, game console, digital camera, camcorder, etc.

[0062] Display device 10 includes a display panel for providing a display screen. Examples of display panels may include inorganic light-emitting diode (LED) display panels, organic light-emitting diode (OLED) display panels, quantum dot (QD) light-emitting diode (OLED) display panels, plasma display panels, field emission display panels, etc. In the following description, an inorganic LED display panel is used as an example of the display panel of display device 10, but this disclosure is not limited thereto. Any other suitable display panel may be used as long as the technical concept of this disclosure is equally applicable.

[0063] In the accompanying drawings, a first direction DR1, a second direction DR2, and a third direction DR3 are defined. The first direction DR1 may be perpendicular (e.g., substantially perpendicular) to the second direction DR2 in a plane. The third direction DR3 may be perpendicular (e.g., substantially perpendicular) to the plane containing the first direction DR1 and the second direction DR2. The third direction DR3 may be perpendicular (e.g., substantially perpendicular) to each of the first direction DR1 and the second direction DR2. In the following description of the display device 10 according to an exemplary embodiment of the present disclosure, the third direction DR3 refers to the thickness direction of the display device 10.

[0064] When viewed from above, the display device 10 may have a rectangular shape, comprising a longer side in the first direction DR1 and a shorter side in the second direction DR2, but this disclosure is not limited thereto. Although the corners where the longer and shorter sides of the display device 10 intersect may form right angles, this is merely illustrative. For example, the display device 10 may have rounded corners. The shape of the display device 10 is not limited to the shape shown, but can be modified in various ways. For example, the display device 10 may have other shapes, such as squares, other polygons, circles, and rectangles with rounded corners (vertices).

[0065] The display surface may be positioned on one side of the display device 10 in a third direction DR3 (e.g., the thickness direction). Unless otherwise specified, in the following description, the upper portion of the display device 10 refers to the side on which the image is displayed in the third direction DR3, and similarly, the upper surface of the display device 10 refers to the surface on the opposite side in the third direction DR3. Furthermore, the lower portion refers to the opposite side in the third direction DR3, and similarly, the lower surface refers to the surface on the opposite side in the third direction DR3. As used herein, the terms "left side," "right side," "upper side," and "lower side" refer to relative positions when the display device 10 is viewed from above. For example, the right side refers to one side in the first direction DR1, the left side refers to the other side in the first direction DR1, the upper side refers to one side in the second direction DR2, and the lower side refers to the other side in the second direction DR2.

[0066] The display device 10 may include a display area DPA and a non-display area NDA. An image may be displayed in the display area DPA. No image is displayed in the non-display area NDA. The display area DPA may be referred to as the active area, and the non-display area NDA may be referred to as the inactive area.

[0067] The shape of the display area DPA may follow the shape of the display device 10. For example, when viewed from above, the display area DPA may have a rectangular shape that is approximately similar to the shape of the display device 10. The display area DPA may occupy approximately the center of the display device 10.

[0068] The display area DPA may include multiple pixels PX. The multiple pixels PX may be arranged in a matrix. When viewed from above, the shape of each pixel PX may be rectangular or square. However, it should be understood that this disclosure is not limited thereto. For example, the shape of each pixel PX may be rhomboid, having sides slanted relative to one direction. Pixel PX may be arranged in stripes and... Patterns are arranged alternately. (It is a registered trademark of Samsung Display Co., Ltd.)

[0069] The non-display area NDA may be located around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. According to an exemplary embodiment of this disclosure, the display area DPA may have a rectangular shape, and the non-display area NDA may be adjacent to the four sides of the display area DPA. The non-display area NDA may form the frame of the display device 10. Pad areas for line and / or circuit drivers included in the display device 10 or for mounting external devices thereon may be located within the non-display area NDA.

[0070] Figure 2 It is a plan view showing the layout of the relative positional relationships between the electrode layer and multiple embankments in a pixel. Figure 3 It is a plan view showing the layout of the relative positional relationship between the electrode layer and the contact electrode layer in a pixel. Figure 4 It is along Figure 3 A cross-sectional view of the display device taken by lines Qa-Qa' and Qb-Qb'.

[0071] refer to Figure 2 and Figure 3 A pixel PX of the display device 10 may include an emitting region EMA and a non-emitting region. In the emitting region EMA, light of a set or specific wavelength band is emitted from the light-emitting element 300, which will be further described below. In the non-emitting region, no light is emitted (e.g., the non-emitting region is not designed to emit light). The non-emitting region may include a cut-out region CBA.

[0072] When viewed from above, the emission region EMA may be located at the central portion of a pixel PX. The pixel PX of the display device 10 may include a plurality of light-emitting elements 300, which will be further described below. The emission region EMA may include an area comprising the light-emitting elements 300, and may include areas surrounding the light-emitting elements 300 from which light emitted from the light-emitting elements 300 exits. The emission region EMA may also include an area in which light emitted from the light-emitting elements 300 is reflected or refracted by another element and exits in the display direction of the display device 10 (i.e., third-party direction DR3). For example, a plurality of light-emitting elements 300 may be located in each of the pixels PX, and the emission region EMA may include the area comprising the light-emitting elements 300 and adjacent areas.

[0073] The emission area EMA may include the contact area CA and the line area LA.

[0074] When viewed from above, the contact area CA may be located at the central portion of the emitting area EMA. In the contact area CA, the light-emitting element 300, which will be further described below, is in contact with (e.g., physical contact) the contact electrodes 610, 711, and 712. The contact area CA may include the light-emitting element 300 and the contact electrodes 610, 711, and 712. In the contact area CA, the ends of the light-emitting element 300 may be in contact with (e.g., physical contact) the contact electrodes 610, 711, and 712. Further description of this will be provided below.

[0075] When viewed from above, the line region LA can be located above the contact region CA (e.g., on one side of the second direction DR2) and below the contact region CA (e.g., on the other side of the second direction DR2). In the line region LA, the first pattern 720 and the third region 620 of the third contact electrode 610 overlap each other on the third direction DR3. Furthermore, in the line region LA, lines can be arranged to transmit electrical signals from the first electrode 211, which will be further described below, to these lines via the light-emitting element 300, the first pattern 720, and the third region 620 of the third contact electrode 610.

[0076] The light-emitting element 300 is not included in the non-emitting region, and the light emitted from the light-emitting element 300 does not reach the non-emitting region, and therefore, no (or substantially no) light is emitted from the non-emitting region.

[0077] When viewed from above, the cut region CBA may be located above the emission region EMA (e.g., on one side of the second direction DR2). The cut region CBA may be located between the emission regions EMA of adjacent pixels PX in the second direction DR2. The length of the cut region CBA in the first direction DR1 may be greater than the length of the emission region EMA in the first direction DR1. The length of the cut region CBA in the second direction DR2 may be less than the length of the emission region EMA in the second direction DR2. However, it should be understood that this disclosure is not limited thereto. When viewed from above, the cut region CBA may have different shapes and sizes, depending on the shape of the second embankment 800, which will be further described below.

[0078] In the display area DPA of the display device 10, multiple emission areas EMA and multiple cut areas CBA can be arranged. For example, the multiple emission areas EMA and multiple cut areas CBA can be arranged repeatedly in the first direction DR1 and alternately in the second direction DR2.

[0079] In the cutting region CBA, the electrode layers 210 and 220 included in adjacent pixels PX in the second direction DR2 can be separated from each other. A portion of each of the electrode layers 210 and 220 in each pixel PX can be located in the cutting region CBA. The electrode layers 210 and 220 of pixel PX can be separated in the cutting region CBA from the electrode layers 210 and 220 of another pixel PX adjacent to that pixel PX in the second direction DR2.

[0080] refer to Figure 2 and Figure 4The display device 10 may include a circuit element layer PAL and an emissive material layer EML located on the circuit element layer PAL. The circuit element layer PAL may include a substrate 110, a buffer layer 121 located on the substrate 110, a semiconductor layer, multiple conductive layers, multiple insulating layers, and a via layer 125. The emissive material layer EML may be located on the via layer 125 of the circuit element layer PAL, and may include an electrode layer 200, multiple light-emitting elements 300, a first contact electrode 711, a second contact electrode 712, a third contact electrode 610, a first pattern 720, multiple insulating layers, a first dam 400, a second dam 800, etc.

[0081] In the following text, reference will be made to Figure 4 Further description of multiple layers of the circuit element layer PAL in a pixel PX of the display device 10.

[0082] The pixels PX of the display device 10 may include a plurality of transistors. Although only one first transistor among the plurality of transistors included in the pixels PX of the display device 10 is depicted in the accompanying drawings, the present disclosure is not limited thereto. For example, the display device 10 may include two or three transistors in each of the pixels PX.

[0083] Substrate 110 may be an insulating substrate. Substrate 110 may be made of insulating materials such as glass, quartz, and polymer resin. Substrate 110 may be a rigid substrate or a flexible substrate that can be bent, folded, or rolled.

[0084] The bottom metal layer (BML) may be located on the substrate 110. The bottom metal layer (BML) may be a light-blocking layer that protects the active layer (ACT) of the semiconductor layer from external light. The bottom metal layer (BML) may include a material that blocks light (or reduces light transmission). For example, the bottom metal layer (BML) may be made of an opaque metallic material that blocks (or reduces) light transmission.

[0085] The bottom metal layer (BML) may have a patterned shape. The bottom metal layer (BML) may be located below and overlap with at least one channel region of the active layer ACT of the transistor in the display device 10, and may also cover the entire active layer ACT of the transistor. However, it should be understood that this disclosure is not limited thereto. The bottom metal layer (BML) may be eliminated.

[0086] A buffer layer 121 may be located on the bottom metal layer BML. The buffer layer 121 may cover the entire surface of the substrate 110, including the bottom metal layer BML. The buffer layer 121 protects the transistor from moisture penetration through the substrate 110, which is susceptible to moisture penetration. The buffer layer 121 may comprise an inorganic material, such as silicon oxide (SiO2). x ), silicon nitride (SiN) x) and / or silicon nitride oxide (SiON). The buffer layer 121 may consist of multiple inorganic layers alternately stacked on top of each other, but is not limited thereto.

[0087] A semiconductor layer may be located on buffer layer 121. The semiconductor layer may include the active layer ACT of a transistor. The active layer ACT may overlap with the bottom metal layer BML.

[0088] The semiconductor layer may include polycrystalline silicon, oxide semiconductors, etc. According to an exemplary embodiment of this disclosure, when the semiconductor layer includes polycrystalline silicon, the semiconductor layer can be formed by crystallizing amorphous silicon. According to another exemplary embodiment, when the semiconductor layer includes an oxide semiconductor, the oxide semiconductor may include, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium zinc tin oxide (IZTO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), and / or indium gallium zinc tin oxide (IGZTO).

[0089] A gate insulating layer 122 may be located above the active layer ACT. The gate insulating layer 122 may also be located on a buffer layer 121, including the active layer ACT. The gate insulating layer 122 may serve as the gate insulator of a transistor. The gate insulating layer 122 may be made of inorganic materials (such as silicon oxide (SiO2)). x ), silicon nitride (SiN) x It consists of inorganic layers of silicon nitride (SiON) and / or silicon oxide (SiON), or may be formed by stacking such materials.

[0090] The gate conductive layer 130 may be located on the gate insulating layer 122. The gate conductive layer 130 may include the gate electrode GE of the transistor. The gate electrode GE may be configured such that it overlaps with the channel region of the active layer ACT in the thickness direction. The gate conductive layer 130 may also include a first electrode of a storage capacitor.

[0091] The gate conductive layer 130 may include at least one material selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). The gate conductive layer 130 may consist of a single layer or multiple layers.

[0092] An interlayer dielectric layer 123 is located on the gate conductive layer 130. The interlayer dielectric layer 123 may be located on the gate insulating layer 122 on which the gate conductive layer 130 is formed. The interlayer dielectric layer 123 may include an inorganic insulating material, such as silicon oxide (SiO2). x ), silicon nitride (SiN) x ) and / or silicon nitride oxide (SiON).

[0093] The first data conductive layer 140 is located on the interlayer dielectric layer 123. The first data conductive layer 140 may include the first source / drain electrode SD1 and the second source / drain electrode SD2 of the transistor, as well as the data line DTL.

[0094] The first source / drain electrode SD1 and the second source / drain electrode SD2 can be electrically connected to the two end regions of the active layer ACT through contact holes penetrating the interlayer dielectric layer 123 and the gate insulating layer 122, respectively. Furthermore, the second source / drain electrode SD2 of the transistor can be electrically connected to the bottom metal layer BML through contact holes penetrating the interlayer dielectric layer 123, the gate insulating layer 122, and the buffer layer 121.

[0095] The data line DTL can apply a data signal to another transistor included in the display device 10. In some embodiments, the data line DTL can be connected to the source / drain electrode of another transistor.

[0096] The first data conductive layer 140 may consist of a single layer or multiple layers comprising at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and alloys thereof. However, it should be understood that this disclosure is not limited thereto.

[0097] Passivation layer 124 is located on the first data conductive layer 140. Passivation layer 124 covers and protects the first data conductive layer 140. Passivation layer 124 may include an inorganic insulating material, such as silicon oxide (SiO2). x ), silicon nitride (SiN) x ) and / or silicon nitride oxide (SiON).

[0098] The second data conductive layer 150 is located on the passivation layer 124. The second data conductive layer 150 may include a first voltage line VL1 and a second voltage line VL2.

[0099] A high-level voltage (or a first supply voltage) can be applied to the first voltage line VL1, and a low-level voltage (or a second supply voltage) can be applied to the second voltage line VL2, the low-level voltage (or second supply voltage) being lower than the high-level voltage (first supply voltage) of the first voltage line VL1. The second voltage line VL2 can be electrically connected to the second electrode 222 to apply the low-level voltage (second supply voltage) to the second electrode 222. Furthermore, an alignment signal used to align the light-emitting element 300 during the manufacturing process of the display device 10 can be applied to the second voltage line VL2.

[0100] The second data conductive layer 150 may further include a conductive pattern that is electrically connected to the second source / drain electrode SD2 of the transistor through a contact hole penetrating the passivation layer 124. The conductive pattern is electrically connected to the first electrode 211 through a first contact hole CT1 (see...). Figure 2 and Figure 3 This allows the first supply voltage applied from the first voltage line VL1 to be transmitted to the first electrode 211.

[0101] The second data conductive layer 150 may consist of a single layer or multiple layers comprising at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and their alloys. However, it should be understood that this disclosure is not limited thereto.

[0102] The via layer 125 is located above the second data conductive layer 150. The via layer 125 may be located on a passivation layer 124 thereon, which includes the second data conductive layer 150. The via layer 125 may provide a flat surface. The via layer 125 may include an organic insulating material, such as an organic material like polyimide (PI), but this disclosure is not limited thereto.

[0103] In the following text, reference will be made to Figures 2 to 4 Describes multiple layers of the emissive material layer EML in a pixel PX of the display device 10.

[0104] refer to Figures 2 to 4 On the via layer 125 of the circuit element layer PAL, a first dam 400, an electrode layer 200, a plurality of light-emitting elements 300, a first contact electrode 711, a second contact electrode 712, a third contact electrode 610, a first pattern 720, a second dam 800, and a plurality of insulating layers 510, 520, 530 and 540 may be included.

[0105] The first dike portion 400 may be located on the through-hole layer 125. The first dike portion 400 may include a first sub-dike portion 410 and a second sub-dike portion 420 spaced apart from each other in the first direction DR1.

[0106] When viewed from above, the second sub-dike portion 420 may be located at the central portion of the emission region EMA. The second sub-dike portion 420 may be located within the contact region CA of the emission region EMA. The second sub-dike portion 420 may include a shape extending in the second direction DR2. The second sub-dike portion 420 may separate and terminate within the emission region EMA such that it does not extend in the second direction DR2 to other adjacent pixels PX. However, it should be understood that this disclosure is not limited thereto. The second sub-dike portion 420 may extend in the second direction DR2 to adjacent pixels PX.

[0107] When viewed from above, the first sub-dike 410 may be spaced apart from the second sub-dike 420 on the right side (e.g., one side in the first direction DR1) and the left side (e.g., the other side in the first direction DR1). The first sub-dike 410 may be spaced apart from and face the second sub-dike 420 in the first direction DR1. An area including a light-emitting element 300 may exist between each of the second sub-dikes 420 and the first sub-dike 410 that are spaced apart from each other in the first direction DR1.

[0108] The first sub-dike portion 410 may have a shape extending in the second direction DR2, and the upper and lower ends of the first sub-dike portion 410 terminate within pixel PX, such that the upper and lower ends of the first sub-dike portion 410 do not extend to other pixels PX adjacent to pixel PX in the second direction DR2. However, it should be understood that this disclosure is not limited thereto. The first sub-dike portion 410 may extend in the second direction DR2 to adjacent pixels PX.

[0109] The first sub-dike portion 410 may extend from the emission region EMA to the non-emission region. The first sub-dike portion 410 may extend across other adjacent pixels PX in the first direction DR1. For example, the first sub-dike portion 410 may be located at the boundary between adjacent pixels PX in the first direction DR1 and at the emission region EMA of the pixel PX.

[0110] The width of the first sub-dike portion 410 in the first direction DR1 may be different from the width of the second sub-dike portion 420 in the first direction DR1. In an exemplary embodiment, the width of the first sub-dike portion 410 in the first direction DR1 may be greater than the width of the second sub-dike portion 420 in the first direction DR1. However, it should be understood that this disclosure is not limited thereto. The width of the first sub-dike portion 410 in the first direction DR1 may be equal to the width of the second sub-dike portion 420 in the first direction DR1.

[0111] Although the first dam 400 in pixel PX in the accompanying drawings includes two first sub-dams 410 spaced apart from each other in the first direction DR1 and a second sub-dam 420 located between the two first sub-dams 410, this disclosure is not limited thereto. The first dam 400 included in each pixel PX may have different shapes and positions depending on the shape or arrangement of the electrode layer 200, which is further described below.

[0112] At least a portion of the first sub-dike portion 410 and the second sub-dike portion 420 may have a structure protruding from the upper surface of the through-hole layer 125 in cross-section. Each of the first sub-dike portion 410 and the second sub-dike portion 420 may include an upper surface, a lower surface, and a side surface. The lower surface of the first sub-dike portion 410 and the lower surface of the second sub-dike portion 420 rests on the upper surface of the through-hole layer 125. The upper surfaces of the first sub-dike portion 410 and the second sub-dike portion 420 may be positioned on one plane, while the lower surfaces of the first sub-dike portion 410 and the second sub-dike portion 420 may be positioned on another plane. These planes are generally parallel to each other (e.g., substantially parallel to each other), and therefore, the first sub-dike portion 410 and the second sub-dike portion 420 may have a generally uniform (e.g., substantially uniform) thickness.

[0113] Each of the first sub-dike portion 410 and the second sub-dike portion 420 may include an inclined side surface. For example, because the first sub-dike portion 410 and the second sub-dike portion 420 include inclined side surfaces, light emitted from the light-emitting element 300 and traveling toward the side surfaces of the first sub-dike portion 410 and the second sub-dike portion 420 can be directed upwards (e.g., to the display side). In some embodiments, the first sub-dike portion 410 and the second sub-dike portion 420 may provide a space including the light-emitting element 300 and may also serve as a reflective partition that changes the direction of light emitted from the light-emitting element 300 toward the display side, wherein the light-emitting element 300 will be further described below.

[0114] Although the side surfaces of the first sub-dike 410 and the second sub-dike 420 are linearly inclined in the drawings, this disclosure is not limited thereto. For example, each of the side surfaces of the first sub-dike 410 and the second sub-dike 420 may have a curved semi-circular or semi-elliptical shape.

[0115] The first embankment 400 may include, but is not limited to, organic insulating materials such as polyimide (PI).

[0116] Electrode layer 200 may be located on first embankment 400. Electrode layer 200 may be partially located on first embankment 400 and through-hole layer 125 exposed by first embankment 400.

[0117] The electrode layer 200 may include a first electrode layer 210 and a second electrode layer 220. The first electrode layer 210 may be located on the first sub-dike portion 410. The second electrode layer 220 may be located on the second sub-dike portion 420.

[0118] The first electrode layer 210 may include a first electrode 211 and a first electrode pattern 212. In a pixel PX, in a planar view, the first electrode 211 may be located on a first sub-dike portion 410 on the left-hand side, and the first electrode pattern 212 may be located on a first sub-dike portion 410 on the right-hand side. The first electrode 211 and the first electrode pattern 212 may be located on a portion of the upper surface and a portion of the side surface of the first sub-dike portion 410.

[0119] The first electrode 211 and the first electrode pattern 212 may include shapes extending in the second direction DR2. The first electrode 211 and the first electrode pattern 212 may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1.

[0120] The first electrode 211 and the first electrode pattern 212 may extend in the second direction DR2, and may be separated from the first electrode 211 and the first electrode pattern 212 of another pixel PX adjacent to the pixel PX in the second direction DR2, such that the first electrode 211 and the first electrode pattern 212 do not extend into the other pixel PX. For example, in the cut region CBA, the first electrode 211 and the first electrode pattern 212 may be separated from the first electrode 211 and the first electrode pattern 212 included in the adjacent pixel PX.

[0121] In the plan view, the shape of the first electrode 211 and the shape of the first electrode pattern 212 are approximately symmetrical about (or about) the center point of the emission region EMA of the pixel PX, which extends in the second direction DR2 and passes through the center point of the emission region EMA.

[0122] In the following text, the shape of the first electrode 211 as viewed from above will be described in detail. As mentioned above, the shape of the first electrode pattern 212 is symmetrical to the shape of the first electrode 211 when viewed from above, and therefore, the description of the shape of the first electrode 211 when viewed from above can be applied in the same way to the shape of the first electrode pattern 212.

[0123] The first electrode 211 may include an extension portion 211E, bent portions 211B1 and 211B2, and connecting portions 211C1 and 211C2 connecting the extension portion 211E to the bent portions 211B1 and 211B2. The first electrode 211 may have a shape that extends generally in the second direction DR2, and may have a partially larger width or may be bent in a direction inclined from the second direction DR2.

[0124] The extension portion 211E has its maximum width in the first electrode 211 along the first direction DR1 and may be the central portion of the first electrode 211. The extension portion 211E may be located on the first sub-dike 410 in the emission region EMA of a pixel PX and may extend in the second direction DR2. The light-emitting element 300, which will be further described below, may be located on the extension portion 211E of the first electrode 211 located in the emission region EMA. The extension portion 211E may have a width in the first direction DR1 that is smaller than the width of the first sub-dike 410 and may extend outward from the side surface of the first sub-dike 410 to partially lie on the via layer 125.

[0125] The curved portions 211B1 and 211B2 may include a first curved portion 211B1 and a second curved portion 211B2. The first curved portion 211B1 may be located on one side of the extended portion 211E in the second direction DR2. For example, the first curved portion 211B1 may be located on the upper side of the extended portion 211E to be spaced apart from the extended portion 211E, and may be inclined to the upper right. The second curved portion 211B2 may be located on the other side of the extended portion 211E in the second direction DR2. For example, the second curved portion 211B2 may be located on the lower side of the extended portion 211E to be spaced apart from the extended portion 211E, and may be inclined to the lower right.

[0126] The segment portion 211D may be formed at one end of the first curved portion 211B1, wherein this one end of the first curved portion 211B1 is the remaining portion of the first electrode 211 cut in the cutting region CBA. In pixels PX adjacent to each other in the second direction DR2, the segment portion 211D may refer to the remaining portion of each of the first electrodes 211 cut in the cutting region CBA.

[0127] The connecting portions 211C1 and 211C2 may include a first connecting portion 211C1 and a second connecting portion 211C2. The first connecting portion 211C1 may connect the extension portion 211E to the first curved portion 211B1 in the second direction DR2. The second connecting portion 211C2 may connect the extension portion 211E to the second curved portion 211B2 in the second direction DR2. The connecting portions 211C1 and 211C2 may overlap with the emission region EMA and the second embankment 800 of each pixel PX (which will be further described below).

[0128] The width of each of the first connecting portion 211C1 and the second connecting portion 211C2 in the first direction DR1 may be smaller than the width of the extension portion 211E in the first direction DR1. One side of each of the connecting portions 211C1 and 211C2 extending in the second direction DR2 may be arranged on the same line as one side of the extension portion 211E extending in the second direction DR2. For example, the side of the extension portion 211E located further out of the emission region EMA may extend and connect with the sides of the connecting portions 211C1 and 211C2 located further out of the emission region EMA.

[0129] The distance between the second electrode pattern 221 and the first electrode 211 (which will be further described below) may vary along the second direction DR2. For example, the distance DE1 between the extended portion 211E of the first electrode 211 and the second electrode pattern 221 may be smaller than the distance DE2 between the connecting portions 211C1 and 211C2 of the first electrode 211 and the second electrode pattern 221, and the distance DE3 between the segment portion 211D of the first electrode 211 and the second electrode pattern 221. Furthermore, the distance DE3 between the segment portion 211D of the first electrode 211 and the second electrode pattern 221 may be smaller than the distance DE2 between the connecting portions 211C1 and 211C2 of the first electrode 211 and the second electrode pattern 221. However, it should be understood that this disclosure is not limited thereto.

[0130] Unlike the first electrode pattern 212, the first electrode 211 may also include a contact portion 211P. The contact portion 211P may be located between the first connecting portion 211C1 and the first bent portion 211B1 to overlap with the second embankment 800. The width of the contact portion 211P may be greater than the width of each of the first connecting portion 211C1 and the first bent portion 211B1. The contact portion 211P may overlap with the first contact hole CT1. In some embodiments, the first contact hole CT1 may be formed through the via layer 125, and the first electrode 211 may be electrically connected to a transistor through the first contact hole CT1 penetrating the via layer 125. Furthermore, during the process of aligning the light-emitting element 300 (which will be further described below), an alignment signal may be applied to the first electrode 211 of the first electrode layer 210 through the first contact hole CT1.

[0131] The second electrode layer 220 may be located between the first electrode 211 and the first electrode pattern 212 of the first electrode layer 210.

[0132] The second electrode layer 220 may include a second electrode 222 and a second electrode pattern 221. In a pixel PX, the second electrode 222 and the second electrode pattern 221 may be located on the same second sub-dike 420. For example, when viewed from above, the second electrode 222 may be located on the upper right side of the second sub-dike 420 in pixel PX. When viewed from above, the second electrode pattern 221 may be located on the upper left side of the second sub-dike 420 in pixel PX. The second electrode pattern 221 may be closer to the first electrode 211 on the second sub-dike 420 to face the first electrode 211. The second electrode 222 may be closer to the first electrode pattern 212 on the second sub-dike 420 to face the first electrode pattern 212. For example, the second electrode 222 may be located between the first electrode 211 and the first electrode pattern 212, while the second electrode pattern 221 may be located between the first electrode 211 and the second electrode 222.

[0133] The second electrode 222 and the second electrode pattern 221 may include shapes extending in the second direction DR2. The second electrode 222 and the second electrode pattern 221 may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1. The second electrode 222 and the second electrode pattern 221 may be spaced apart from each other on the upper surface of the second sub-embankment 420.

[0134] The second electrode 222 and the second electrode pattern 221 may extend in the second direction DR2, and may be separated from the second electrode 222 and the second electrode pattern 221 of another pixel PX adjacent to the pixel PX in the second direction DR2, such that the second electrode 222 and the second electrode pattern 221 do not extend into the other pixel PX. For example, in the cut region CBA, the second electrode 222 and the second electrode pattern 221 may be separated from the second electrode 222 and the second electrode pattern 221 included in the adjacent pixel PX.

[0135] In the plan view, the shape of the second electrode 222 and the shape of the second electrode pattern 221 are axially symmetrical (or axially symmetrical about) the line that extends in the second direction DR2 and passes through the center point of the emission region EMA of the pixel PX.

[0136] The second electrode 222 can be electrically connected to the second voltage line VL2 through the second contact hole CT2. Furthermore, during the process of aligning the light-emitting element 300, an alignment signal can be applied to the second electrode 222 of the second electrode layer 220 through the second contact hole CT2, which will be further described below.

[0137] The first electrode pattern 212 and the second electrode pattern 221 may be floating, such that substantially no electrical signal is applied directly from the transistor and / or the second voltage line VL2. However, the third contact electrode 610 (which will be further described below) is located on the electrode layer 200 (e.g., the first electrode pattern 212 and the second electrode pattern 221) in which no contact holes CT1 and CT2 are formed, and the electrical signal transmitted from the first electrode 211 to the light-emitting element 300 may flow through the third contact electrode 610.

[0138] A first insulating layer 510 may be located on the electrode layer 200. The first insulating layer 510 may be located on the electrode layer 200 and the via layer 125 exposed by the electrode layer 200. The first insulating layer 510 may expose at least a portion of the electrode layer 200 on the third-direction DR3. For example, the first insulating layer 510 may be completely located on the substrate 110 and on at least a portion of the surface of each of the first electrode 211, the first electrode pattern 212, the second electrode 222, and the second electrode pattern 221. The surface of each of the first electrode 211, the first electrode pattern 212, the second electrode 222, and the second electrode pattern 221 exposed by the first insulating layer 510 may contact (e.g., physically contact) the contact electrodes 711, 712, and 610, and may electrically connect the light-emitting element 300 to the first electrode 211 and the second electrode 222.

[0139] The first insulating layer 510 may have a horizontal difference such that a portion of its upper surface is recessed between the first electrode 211 and the second electrode pattern 221. Furthermore, the first insulating layer 510 may have a horizontal difference such that a portion of its upper surface is recessed between the second electrode 222 and the first electrode pattern 212. A portion of the upper surface of the first insulating layer 510 may be recessed due to the horizontal difference of the element beneath it. In some exemplary embodiments, a horizontal difference may be formed in the first insulating layer 510 between the first electrode 211 and the second electrode pattern 221 and / or between the second electrode 222 and the first electrode pattern 212, such that a void may be formed between the recessed upper surface of the first insulating layer 510 and the light-emitting element 300. The void between the first insulating layer 510 and the light-emitting element 300 may be filled with the material of the second insulating layer 520. However, it should be understood that this disclosure is not limited thereto. No horizontal difference may be formed in the first insulating layer 510 between the first electrode 211 and the second electrode pattern 221 and / or between the second electrode 222 and the first electrode pattern 212. For example, the first insulating layer 510 may include a flat upper surface such that the light-emitting element 300 is located between the first electrode 211 and the second electrode pattern 221 and / or between the second electrode 222 and the first electrode pattern 212.

[0140] The first insulating layer 510 may be located between the first electrode 211 and the second electrode pattern 221, and between the second electrode 222 and the first electrode pattern 212, to protect them and also to insulate them from each other (e.g., electrically). Furthermore, the first insulating layer 510 can prevent or reduce contact between the light-emitting element 300 on the first insulating layer 510 and other elements, thereby preventing or reducing damage to the light-emitting element 300 that would otherwise occur.

[0141] The second dam portion 800 may be located on the first insulating layer 510. The second dam portion 800 may be located on the upper surface of the first sub-dam portion 410 on which the first insulating layer 510 is disposed. When viewed from above, the second dam portion 800 may present a grid pattern across the entire surface of the display area DPA, and the second dam portion 800 includes portions extending in the first direction DR1 and portions extending in the second direction DR2. The second dam portion 800 may be located along the border of each of the pixels PX to distinguish adjacent pixels PX from each other.

[0142] Furthermore, the second dam 800 may surround the emission region EMA and the cut region CBA in each of the pixels PX to distinguish the emission region EMA and the cut region CBA. The first electrode layer 210 and the second electrode layer 220 may extend in the second direction DR2 and may extend across the portion of the second dam 800 that extends in the first direction DR1. The width of the portion of the second dam 800 that extends in the second direction DR2 along the first direction DR1 may vary. For example, the width of the portion of the second dam 800 that extends in the second direction DR2 and is located between adjacent emission regions EMA in the first direction DR1 may be greater than the width of the portion located between adjacent cut regions CBA in the first direction DR1. However, it should be understood that this disclosure is not limited thereto.

[0143] The second dam 800 prevents or reduces ink spillage into adjacent pixels PX during the inkjet printing process in the manufacture of the display device 10. The second dam 800 separates the pixels PX from each other, preventing the inks containing different light-emitting elements 300 from mixing. Like the first dam 400, the second dam 800 may include, but is not limited to, polyimide (PI).

[0144] The light-emitting element 300 may be located on the first insulating layer 510. The light-emitting element 300 may include different materials to emit light of different wavelength bands to the outside.

[0145] The light-emitting elements 300 may be arranged and spaced apart from each other along a second direction DR2 extending from the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212, and may be arranged substantially parallel to each other. The spacing between the light-emitting elements 300 is not particularly limited herein. Furthermore, the light-emitting elements 300 may have a shape extending in one direction. The direction in which the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212 extend may be substantially perpendicular to the direction in which the light-emitting elements 300 extend. However, it should be understood that this disclosure is not limited thereto. The light-emitting elements 300 may not be perpendicular to the direction in which the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212 extend, but may be oriented obliquely relative to the direction in which the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212 extend.

[0146] The plurality of light-emitting elements 300 may include a first light-emitting element 300 located between the first electrode 211 and the second electrode pattern 221, and a second light-emitting element 300 located between the second electrode 222 and the first electrode pattern 212. For example, the first light-emitting element 300 may be arranged on the left side of the figure, while the second light-emitting element 300 may be arranged on the right side of the figure.

[0147] Both ends of each of the light-emitting elements 300 on the first insulating layer 510 may be located on the electrode layer 200. The first semiconductor layer 310 of the first light-emitting element 300 located between the first electrode 211 and the second electrode pattern 221 (see...) Figure 5 The orientation of the first light-emitting element 300 may differ from the orientation of the first semiconductor layer 310 of the second light-emitting element 300 located between the second electrode 222 and the first electrode pattern 212. For example, the first light-emitting element 300 may be aligned on the first insulating layer 510 between the first electrode 211 and the second electrode pattern 221, such that the end of the first semiconductor layer 310 of the first light-emitting element 300 is located on the second electrode pattern 221. For example, the second light-emitting element 300 may be aligned on the first insulating layer 510 between the second electrode 222 and the first electrode pattern 212, such that the end of the first semiconductor layer 310 of the second light-emitting element 300 is located on the second electrode 222. For example, the end of each of the light-emitting elements 300 where the first semiconductor layer 310 is disposed is defined as a first end. Then, when viewed from top, in pixel PX, the first end of the light-emitting element 300 located on the upper left and the first end of the light-emitting element 300 located on the upper right may face opposite directions. However, it should be noted that the direction in which the first end of the light-emitting element 300 faces is not limited to this.

[0148] A second insulating layer 520 may be located on the light-emitting element 300. The second insulating layer 520 may be partially located on the light-emitting element 300. The second insulating layer 520 may partially surround the outer surface of the light-emitting element 300 such that the first end and other ends (hereinafter also referred to as the second end) of the light-emitting element 300 are not covered. The first contact electrode 711, the second contact electrode 712, and the third contact electrode 610, which will be further described below, may contact (e.g., physically contact) the two ends of the light-emitting element 300 that are not covered by the second insulating layer 520. When viewed from above, a portion of the second insulating layer 520 on the light-emitting element 300 may form a linear or island pattern in the pixel PX. During the manufacturing process of the display device 10, the second insulating layer 520 protects and secures the light-emitting element 300.

[0149] refer to Figure 3 and Figure 4 The first contact electrode 711, the second contact electrode 712, the third contact electrode 610, the first pattern 720, and the third insulating layer 530 may be located on the second insulating layer 520. The relative arrangement of the first contact electrode 711, the second contact electrode 712, the third contact electrode 610, the first pattern 720, and the third insulating layer 530 when viewed from above will be described below.

[0150] The first contact electrode 711 may be located on the portion of the first electrode 211 located in the contact region CA. For example, when viewed from above, the first contact electrode 711 may be located on the extension portion 211E of the first electrode 211, having a shape extending in the second direction DR2. The first contact electrode 711 may be located on the first electrode 211 and may extend toward the first light-emitting element 300 to overlap with the other ends (second ends) of the light-emitting element 300.

[0151] The second contact electrode 712 may be located on the portion of the second electrode 222 located in the contact region CA. For example, when viewed from above, the second contact electrode 712 may be located on the second electrode 222 to have a shape extending in the second direction DR2. The second contact electrode 712 may be located on the second electrode 222 and may extend toward the second light-emitting element 300 to overlap with the first end of the light-emitting element 300.

[0152] The first contact electrode 711 and the second contact electrode 712 may respectively contact (e.g., physically contact) the first electrode 211 having a first contact hole CT1 and the second electrode 222 having a second contact hole CT2. The first contact electrode 711 may contact (e.g., physically contact) the first electrode 211 electrically connected to the transistor through the first contact hole CT1, and the second contact electrode 712 may contact (e.g., physically contact) the second electrode 222 electrically connected to the second voltage line VL2 through the second contact hole CT2. The first contact electrode 711 and the second contact electrode 712 may transmit electrical signals applied from the transistor and / or the second voltage line VL2 to the light-emitting element 300.

[0153] The first pattern 720 may overlap with the third region 620 of the third contact electrode 610, which will be further described below, in the line region LA. The first pattern 720 may contact (e.g., physically contact) at least a portion of the third region 620 of the third contact electrode 610. Further description thereof will be provided below.

[0154] The first contact electrode 711, the second contact electrode 712, and the first pattern 720 may be spaced apart from each other. In some exemplary embodiments, the first contact electrode 711, the second contact electrode 712, and the first pattern 720 may be formed on the same layer. The first contact electrode 711, the second contact electrode 712, and the first pattern 720 may be patterned and formed via the same mask process. However, it should be understood that this disclosure is not limited thereto. In some other exemplary embodiments, the first pattern 720 may be formed on a different layer than the first contact electrode 711 and the second contact electrode 712. For example, the first pattern 720 may be formed via a subsequent process after the first contact electrode 711 and the second contact electrode 712 have been formed.

[0155] When viewed from above, the third contact electrode 610 may include a closed-loop shape. The third contact electrode 610 may include a first region 611 and a second region 612 located in the contact region CA, and a third region 620 located in the line region LA. For example, the third contact electrode 610 may include a first region 611 located on the second electrode pattern 221 in the contact region CA, a second region 612 located on the first electrode pattern 212 in the contact region CA, and a third region 620 located in the line region LA.

[0156] The first region 611 and the second region 612 of the third contact electrode 610 may be spaced apart from each other and extend in the second direction DR2. The third region 620 of the third contact electrode 610 may connect the first region 611 and the second region 612 of the third contact electrode 610. The third contact electrode 610 may include the first region 611 and the second region 612 extending in the second direction DR2, and the third region 620 connecting the first region 611 and the second region 612 to surround the second contact electrode 712.

[0157] The first region 611 and the second region 612 of the third contact electrode 610 may be located on the first electrode pattern 212 and the second electrode pattern 221, which do not have contact holes CT1 and CT2, respectively, and may be in contact with the light-emitting element 300 (e.g., physical contact). The third region 620 of the third contact electrode 610 may overlap with the second electrode 222, in which the second contact hole CT2 is formed, and the first insulating layer 510 is located between the third region 620 and the second electrode 222, such that the third region 620 and the second electrode 222 may not be directly connected to each other.

[0158] The first region 611 of the third contact electrode 610 may be located on a portion of the second electrode pattern 221. For example, the first region 611 of the third contact electrode 610 may be located on the second electrode pattern 221 and may have a shape extending in the second direction DR2 when viewed from above. The first region 611 of the third contact electrode 610 may be located on the second electrode pattern 221 and may extend toward the first light-emitting element 300 to overlap with the first end of the first light-emitting element 300.

[0159] The second region 612 of the third contact electrode 610 may be located on a portion of the first electrode pattern 212. For example, the second region 612 of the third contact electrode 610 may be located on the first electrode pattern 212 and may have a shape extending in the second direction DR2 when viewed from above. The second region 612 of the third contact electrode 610 may be located on the first electrode pattern 212 and may extend toward the second light-emitting element 300 to overlap with other ends (second ends) of the second light-emitting element 300. The second region 612 of the third contact electrode 610 may be spaced apart from the first region 611 of the third contact electrode 610.

[0160] The third region 620 of the third contact electrode 610 may be located in the line region LA, and the first region 611 of the third contact electrode 610 may be connected to the second region 612. The third region 620 of the third contact electrode 610 may have a shape extending in the first direction DR1, such that the third region 620 connects the two ends of the first region 611 of the third contact electrode 610 to the two ends of the second region 612, respectively.

[0161] The first region 611, the second region 612, and the third region 620 of the third contact electrode 610 may be integrally connected to form a closed loop shape. The third contact electrode 610 may surround the second contact electrode 712.

[0162] In the following text, reference will be made to Figure 4 The cross-sectional structure of the first contact electrode 711, the second contact electrode 712, the third contact electrode 610, the first pattern 720, and the third insulating layer 530 is described.

[0163] The third contact electrode 610 may also be located on the second insulating layer 520. As described above, the third contact electrode 610 may include a first region 611 and a second region 612 located in the contact region CA and a third region 620 located in the line region LA.

[0164] The first region 611 of the third contact electrode 610 may be in direct contact (e.g., physical contact) with the first end of the light-emitting element 300 and the surface of the second electrode pattern 221. The first region 611 of the third contact electrode 610 may be partially located on the upper surface of the second insulating layer 520 on the light-emitting element 300. The first region 611 may not overlap with the second electrode 222 on the second sub-dike portion 420 on the third direction DR3, and may not be located on the second electrode 222.

[0165] The second region 612 of the third contact electrode 610 may be in direct contact (e.g., physical contact) with the other ends (second ends) of the light-emitting element 300 and the surface of the first electrode pattern 212. The second region 612 of the third contact electrode 610 may be partially located on the upper surface of the second insulating layer 520 on the light-emitting element 300.

[0166] The third region 620 of the third contact electrode 610 may be located on the first insulating layer 510 within the line region LA. The third region 620 of the third contact electrode 610 may partially overlap with the second electrode layer 220 (e.g., the second electrode 222 and the second electrode pattern 221) within the line region LA. The third region 620 of the third contact electrode 610 may be completely located within the line region LA.

[0167] The third contact electrode 610 may include a conductive material (e.g., an electrically conductive material). For example, the third contact electrode 610 may include ITO, IZO, ITZO, aluminum (Al), etc. For example, the third contact electrode 610 may include a transparent conductive material, and light emitted from the light-emitting element 300 may exit through the side surface and both end surfaces of the light-emitting element 300. Light exiting through one end surface of the light-emitting element 300 may be transmitted through the third contact electrode 610 (e.g., the first region 611 and the second region 612) that is in contact (e.g., physical contact) with the end surface of the light-emitting element 300 in the contact region CA. Light emitted from the light-emitting element 300 that is transmitted through the third contact electrode 610 may be reflected from the side surface of the first sub-dike 410 and the side surface of the second sub-dike 420 to travel in the display direction (e.g., the third third direction DR3). However, it should be understood that this disclosure is not limited thereto. According to an exemplary embodiment of this disclosure, the third contact electrode 610 may include crystalline ITO, but is not limited thereto.

[0168] The third insulating layer 530 is located on the third contact electrode 610. The third insulating layer 530 may be located in the contact region CA but not in the line region LA. For example, the third insulating layer 530 may completely cover the first region 611 and the second region 612 of the third contact electrode 610 located in the contact region CA, and the third region 620 of the third contact electrode 610 located in the line region LA may be exposed on the third-direction DR3. In some embodiments, the third insulating layer 530 may overlap with the third contact electrode 610 in the contact region CA but may not overlap with the third contact electrode 610 in the line region LA.

[0169] The third insulating layer 530 electrically insulates the third contact electrode 610 from the first contact electrode 711 and the second contact electrode 712. The third insulating layer 530 may cover the first region 611 and the second region 612 of the third contact electrode 610, but may not be located on other ends (the second end) of the first light-emitting element 300 or the first end of the second light-emitting element 300, such that the light-emitting element 300 is in contact (e.g., physical contact) with the first contact electrode 711 and the second contact electrode 712. Specifically, the first light-emitting element 300 is in contact (e.g., physical contact) with the first contact electrode 711, and the second light-emitting element 300 is in contact (e.g., physical contact) with the second contact electrode 712. One side surface of the third insulating layer 530 may be aligned with one side surface of the second insulating layer 520.

[0170] The first contact electrode 711, the second contact electrode 712, and the first pattern 720 may be located on the third insulating layer 530. The first contact electrode 711 and the second contact electrode 712 may be located in the contact area CA. The first pattern 720 may be located in the line area LA.

[0171] The first contact electrode 711 may be in direct contact (e.g., physical contact) with other ends (second ends) of the light-emitting element 300 (specifically, the first light-emitting element 300) and the surface of the first electrode 211. The first contact electrode 711 may be partially located on the upper surface of the third insulating layer 530 on the light-emitting element 300.

[0172] The second contact electrode 712 may be in direct contact (e.g., physical contact) with the first end of the light-emitting element 300 (specifically, the second light-emitting element 300) and the surface of the second electrode 222. The second contact electrode 712 may be partially located on the upper surface of the third insulating layer 530 on the light-emitting element 300.

[0173] The first pattern 720 may be located on the third region 620 of the third contact electrode 610 located in the line region LA. According to an exemplary embodiment of this disclosure, the first pattern 720 may be in direct contact (e.g., physical contact) with the third region 620 of the third contact electrode 610. The lower surface of the first pattern 720 may be in contact (e.g., physical contact) with the upper surface of the third region 620 of the third contact electrode 610, and the lower surface of the first pattern 720 and the upper surface of the third region 620 of the third contact electrode 610 may be located on the same plane. Although in Figure 4 In the example shown, the first pattern 720 in the line region LA is completely located on and in contact with the third region 620 of the third contact electrode 610 (e.g., in physical contact), but this disclosure is not limited thereto. Further description will be provided below with reference to other accompanying drawings.

[0174] The first contact electrode 711, the second contact electrode 712, and the first pattern 720 may comprise the same (e.g., substantially the same) material. For example, each of the first contact electrode 711, the second contact electrode 712, and the first pattern 720 may comprise a conductive material (e.g., an electrically conductive material). For example, the first contact electrode 711, the second contact electrode 712, and the first pattern 720 may comprise ITO, IZO, ITZO, aluminum (Al), etc. For example, each of the first contact electrode 711, the second contact electrode 712, and the first pattern 720 may comprise a transparent conductive material, and as described above, light emitted from the light-emitting element 300 can exit through both end surfaces and the side surfaces of the light-emitting element 300. Light emitted through the other end surface (second end surface) of the first light-emitting element 300 can be transmitted through the first contact electrode 711, which is in contact (e.g., physical contact) with the other end surface (second end surface) of the first light-emitting element 300 in the contact area CA, and light emitted through the first end surface of the second light-emitting element 300 can be transmitted through the second contact electrode 712, which is in contact (e.g., physical contact) with the first end surface of the second light-emitting element 300 in the contact area CA. Light emitted from the light-emitting element 300 to transmit through the first contact electrode 711 and the second contact electrode 712 can be reflected by the side surfaces of the first sub-dike 410 and the second sub-dike 420 to travel in the display direction (e.g., third direction DR3). However, it should be understood that this disclosure is not limited thereto. According to exemplary embodiments of this disclosure, the first contact electrode 711, the second contact electrode 712, and the first pattern 720 may include at least one selected from amorphous ITO and crystalline ITO, but are not limited thereto.

[0175] Electrical signals transmitted from the first contact electrode 711, which is in contact (e.g., physical contact) with the first electrode 211, to the other end (second end) of the first light-emitting element 300 (e.g., the light-emitting element 300 on the left side in the figure), are transmitted to the first region 611 of the third contact electrode 610, which is in contact (e.g., physical contact) with the first end of the first light-emitting element 300. The third contact electrode 610 can transmit electrical signals from the first region 611 in the contact region CA back to the second region 612 in the contact region CA via the third region 620 located in the line region LA. The electrical signals transmitted to the second region 612 of the third contact electrode 610 can be transmitted to one end of the second light-emitting element 300 (e.g., the light-emitting element 300 on the right side in the figure), and this electrical signal can be transmitted to the second electrode 222 via the second contact electrode 712. Therefore, the electrical signal for light emission of the light-emitting element 300 can be transmitted to only one first electrode 211 and one second electrode 222, and the light-emitting element 300 located on the left (i.e., the first light-emitting element 300) and the light-emitting element 300 located on the right (i.e., the second light-emitting element 300) can be connected in series through the third contact electrode 610.

[0176] The fourth insulating layer 540 may be completely located on the substrate 110. The fourth insulating layer 540 can protect the components on the substrate 110 from the influence of the external environment. According to an exemplary embodiment, the fourth insulating layer 540 may completely cover the second embankment 800, the third insulating layer 530, the first contact electrode 711, the second contact electrode 712 and the third contact electrode 610 and the first pattern 720 on the substrate 110.

[0177] Each of the first insulating layer 510, second insulating layer 520, third insulating layer 530, and fourth insulating layer 540 described above may comprise an inorganic insulating material or an organic insulating material. According to an exemplary embodiment of this disclosure, the first insulating layer 510, second insulating layer 520, third insulating layer 530, and fourth insulating layer 540 may comprise an inorganic insulating material, such as silicon oxide (SiO2). x ), silicon nitride (SiN) x ), silicon nitride oxide (SiO) x N y ), aluminum oxide (Al x O y(and / or aluminum nitride (AlN). In some embodiments, the first insulating layer 510, the second insulating layer 520, the third insulating layer 530, and the fourth insulating layer 540 may comprise acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, Cardo resin, siloxane resin, silsesquioxane resin, polymethyl methacrylate, polycarbonate, polymethyl methacrylate-polycarbonate synthetic resin, etc., as organic insulating materials. However, it should be understood that this disclosure is not limited thereto.

[0178] Figure 5 This is a perspective view of a light-emitting element according to an exemplary embodiment of the present disclosure.

[0179] The light-emitting element 300 may include a light-emitting diode (LED). For example, the light-emitting element 300 may have dimensions in the range of micrometers to nanometers and may be an inorganic LED made of inorganic materials. The inorganic LED can be arranged by forming an electric field between two electrode layers facing each other. For example, the inorganic LED can be aligned between the two electrodes by forming an electric field in a set or specific direction to have polarity between the two electrode layers.

[0180] The light-emitting element 300 according to an exemplary embodiment may have a shape extending in one direction (longitudinal direction). The light-emitting element 300 may have a rod, wire, tube, or similar shape. In an exemplary embodiment, the light-emitting element 300 may have a cylindrical or rod-shaped shape. It should be understood that the shape of the light-emitting element 300 is not limited thereto. The light-emitting element 300 may have a variety of shapes, including polygonal prism shapes such as cubes, cuboids, or hexagonal prisms, or shapes extending in one direction and having a partially inclined outer surface. Multiple semiconductor layers included in the light-emitting element 300, which will be further described below, may have a structure in which they are sequentially arranged or stacked along the direction in which the light-emitting element 300 extends.

[0181] The light-emitting element 300 may include a semiconductor layer doped with conductive impurities (e.g., p-type or n-type). The semiconductor layer can emit light of a set or certain wavelength band by transmitting an electrical signal applied from an external power source.

[0182] refer to Figure 5 The light-emitting element 300 may include a first semiconductor layer 310, a second semiconductor layer 320, an active layer 360, an element electrode layer 370, and an insulating layer 380.

[0183] The first semiconductor layer 310 may be an n-type semiconductor. For example, when the light-emitting element 300 emits light in the blue wavelength band, the first semiconductor layer 310 may include a semiconductor material having the following chemical formula: Al x Ga y In1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the semiconductor material can be at least one selected from n-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The first semiconductor layer 310 may be doped with an n-type dopant, and the n-type dopant may include, for example, Si, Ge, Sn, etc. According to an exemplary embodiment of this disclosure, the first semiconductor layer 310 may be n-GaN doped with n-type Si. The length of the first semiconductor layer 310 in the aforementioned longitudinal direction may be in the range of 1.5 μm to 5 μm, but is not limited thereto.

[0184] The second semiconductor layer 320 may be spaced apart from the first semiconductor layer 310 along the direction in which the light-emitting element 300 extends. The second semiconductor layer 320 may be a p-type semiconductor. For example, when the light-emitting element 300 emits light in the blue or green wavelength band, the second semiconductor layer 320 may include a semiconductor material having the following chemical formula: Al x Ga y In 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the semiconductor material can be at least one selected from p-type doped AlGaInN, GaN, AlGaN, InGaN, AlN, and InN. The second semiconductor layer 320 may be doped with a p-type dopant, and the p-type dopant may be, for example, Mg, Zn, Ca, Se, Ba, etc. According to an exemplary embodiment of this disclosure, the second semiconductor layer 320 may be p-GaN doped with p-type Mg. The length of the second semiconductor layer 320 in the aforementioned longitudinal direction may be in the range of 0.05 μm to 0.10 μm, but is not limited thereto.

[0185] Although each of the first semiconductor layer 310 and the second semiconductor layer 320 is implemented as a single layer in the accompanying drawings, this disclosure is not limited thereto. According to some exemplary embodiments of this disclosure, the first semiconductor layer 310 and the second semiconductor layer 320 may also include a greater number of layers, such as plating and / or tensile strain barrier reduction (TSBR) layers, depending on the material of the active layer 360.

[0186] An active layer 360 is located between a first semiconductor layer 310 and a second semiconductor layer 320. The active layer 360 may comprise a material having a single quantum well structure or a multiple quantum well structure. When the active layer 360 comprises a material having a multiple quantum well structure, the structure may comprise quantum layers and well layers alternately stacked on top of each other. In response to an electrical signal applied through the first semiconductor layer 310 and the second semiconductor layer 320, the active layer 360 may emit light when electron-hole pairs recombine therein. For example, when the active layer 360 emits light in the blue wavelength band, it may comprise materials such as AlGaN and / or AlGaInN. In some embodiments, when the active layer 360 has a multiple quantum well structure in which quantum layers and well layers are alternately stacked on top of each other, the quantum layers may comprise AlGaN and / or AlGaInN, and the well layers may comprise materials such as GaN and / or AlGaN. According to an exemplary embodiment of this disclosure, the active layer 360 includes AlGaInN as a quantum layer and AlInN as a well layer, and as described above, the active layer 360 can emit blue light having a center wavelength band in the range of 450 nm to 495 nm.

[0187] However, it should be understood that this disclosure is not limited thereto. The active layer 360 may have a structure in which semiconductor materials with large bandgap energy and semiconductor materials with small bandgap energy are alternately stacked on top of each other, and may include other group III to group V semiconductor materials depending on the wavelength range of the emitted light. Therefore, the light emitted from the active layer 360 is not limited to the blue wavelength band. In some implementations, the active layer 360 may emit light in the red or green wavelength band. The length of the active layer 360 in the aforementioned longitudinal direction may be in the range of 0.05 μm to 0.10 μm, but is not limited thereto.

[0188] Light emitted from the active layer 360 can exit not only through the outer surfaces at both ends of the light-emitting element 300 in the longitudinal direction, but also through the side surfaces. The direction of light propagation emitted from the active layer 360 is not limited to one direction.

[0189] The element electrode layer 370 may be located on the second semiconductor layer 320. The element electrode layer 370 may include an ohmic contact electrode. However, it should be understood that this disclosure is not limited thereto. The element electrode layer 370 may include a Schottky contact electrode (e.g., an electrode having a junction formed of a semiconductor and a metal). The light-emitting element 300 may include at least one element electrode layer 370. Although in Figure 5 The example shown includes a light-emitting element 300 with one element electrode layer 370, but this disclosure is not limited thereto. In some implementations, the light-emitting element 300 may include more than one element electrode layer 370.

[0190] In the display device 10 according to an exemplary embodiment of the present disclosure, when the light-emitting element 300 is electrically connected to the electrode layer 200 or the first contact electrode 711, the second contact electrode 712, and the third contact electrode 610 in the contact region CA, the element electrode layer 370 can reduce the resistance between the light-emitting element 300 and the electrode layer 200 or the first contact electrode 711, the second contact electrode 712, and the third contact electrode 610 in the contact region CA. The element electrode layer 370 may include a metal having conductivity (e.g., electrical conductivity). For example, the element electrode layer 370 may include at least one selected from aluminum (Al), titanium (Ti), indium (In), gold (Au), silver (Ag), indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO). Furthermore, the element electrode layer 370 may include a semiconductor material doped with n-type or p-type impurities. The element electrode layer 370 may include the same (e.g., substantially the same) material, or it may include different materials. However, it should be understood that the present disclosure is not limited thereto.

[0191] According to an exemplary embodiment of this disclosure, the element electrode layer 370 may include a transparent conductive material, such that light emitted from the active layer 360 is smoothly emitted to both ends of the light-emitting element 300. For example, the element electrode layer 370 may include ITO. The thickness d3 of the element electrode layer 370 in the aforementioned longitudinal direction (hereinafter also referred to as the third thickness d3) may be in the range of 0.09 μm to 0.14 μm, but is not limited thereto. The longitudinal direction refers to the direction in which the light-emitting element 300 extends.

[0192] An insulating layer 380 surrounds the side surfaces of the semiconductor layers 310 and 320 and the element electrode layer 370 described above. According to an exemplary embodiment of this disclosure, the insulating layer 380 may at least surround the side surface of the active layer 360 and may extend in the direction in which the light-emitting element 300 extends. The insulating layer 380 may protect the first semiconductor layer 310, the second semiconductor layer 320, the active layer 360, and the element electrode layer 370 described above. For example, the insulating layer 380 may be formed to surround the side portions of the first semiconductor layer 310, the second semiconductor layer 320, the active layer 360, and the element electrode layer 370, but the two ends of the light-emitting element 300 in the longitudinal direction may be exposed.

[0193] Although in the example shown in the figures, the insulating layer 380 extends in the longitudinal direction of the light-emitting element 300 to completely cover the side surface of the element electrode layer 370 from the side surface of the first semiconductor layer 310, this disclosure is not limited thereto. The insulating layer 380 may cover only a portion of the side surface of the semiconductor layer and the side surface of the active layer 360, or it may cover only a portion of the side surface of the element electrode layer 370 to partially expose the side surface of the element electrode layer 370. Furthermore, in cross-section, the portion of the upper surface of the insulating layer 380 adjacent to at least one end of the light-emitting element 300 may be rounded.

[0194] The thickness of the insulating layer 380 can be in the range of 10 nm to 1.0 μm, but is not limited to this. For example, the thickness of the insulating layer 380 can be approximately 40 nm.

[0195] Insulating layer 380 may include a material having insulating properties (e.g., electrical insulating properties), such as silicon oxide (SiO2). x ), silicon nitride (SiN) x ), silicon nitride oxide (SiO) x N y ), aluminum nitrides (AlN) and / or aluminum oxides (Al x O y Therefore, electrical short circuits that may occur when the active layer 360 comes into contact (e.g., physical contact) with the electrodes through which electrical signals are transmitted to the light-emitting element 300. Furthermore, because the insulating layer 380 protects the outer surface of the light-emitting element 300, which includes the active layer 360, a decrease in luminous efficiency is prevented or reduced.

[0196] Furthermore, in some exemplary embodiments, the outer surface of the insulating layer 380 may be subjected to a surface treatment. The light-emitting element 300 may be dispersed in ink, and the ink may be sprayed onto the electrode. In this case, a surface treatment may be applied to the insulating layer 380 to make the insulating layer 380 hydrophobic or hydrophilic, so as to prevent the light-emitting elements 300 dispersed in the ink from agglomerating together.

[0197] The length h of the light-emitting element 300 can be in the range of 1 μm to 10 μm, in the range of 2 μm to 6 μm, or in the range of, for example, approximately 3 μm to 5 μm. Furthermore, the diameter of the light-emitting element 300 can be in the range of 30 nm to 700 nm, and the aspect ratio of the light-emitting element 300 can be in the range of 1.2 to 100. However, it should be understood that this disclosure is not limited thereto. Depending on the composition of the active layer 360, the plurality of light-emitting elements 300 included in the display device 10 can have different diameters. For example, the diameter of the light-emitting element 300 can be approximately 500 nm.

[0198] Figure 6 yes Figure 4An enlarged sectional view of region P1. Figure 7 yes Figure 4 An enlarged sectional view of region P2.

[0199] Combination Figure 4 and Figure 5 refer to Figure 6 and Figure 7 The third contact electrode 610 may be formed on the first insulating layer 510 with a first thickness d1. In an exemplary embodiment where the first contact electrode 711, the second contact electrode 712, and the first pattern 720 are formed on the same layer, each of the first contact electrode 711, the second contact electrode 712, and the first pattern 720 may be formed on the first insulating layer 510 with a second thickness d2. In the following description, the thickness of each of the contact electrodes 711, 712, and 610 may refer to the average distance from the surface of each of the contact electrodes 711, 712, and 610 that contacts (e.g., physically contacts) with an element below it (hereinafter referred to as the lower surface) to the opposite surface (hereinafter referred to as the upper surface).

[0200] refer to Figure 6 In the contact region CA, the first region 611 and the second region 612 of the first contact electrode 711, the second contact electrode 712, and the third contact electrode 610 can contact (e.g., physically contact) the two ends of the light-emitting element 300. The transmittance of light generated in the active layer 360 of the light-emitting element 300 and output through the two ends of the light-emitting element 300 can vary depending on the second thickness d2 of the first contact electrode 711 and the second contact electrode 712 that are in contact (e.g., physically contact) with the two ends of the light-emitting element 300 in the contact region CA, and the first thickness d1 of the first region 611 and the second region 612 of the third contact electrode 610.

[0201] Furthermore, the transmittance of light generated in the active layer 360 of the light-emitting element 300 can be determined based on a fourth thickness d4, wherein the fourth thickness d4 is the sum of the third thickness d3 of the element electrode layer 370 included in the light-emitting element 300 and the first thickness d1 of the third contact electrode 610 in the contact region CA. As the first thickness d1, the second thickness d2, and the third thickness d3 increase, the transmittance of light generated in the light-emitting element 300 and emitted to the outside of the light-emitting element 300 can decrease. Therefore, in order to increase the transmittance of light generated and emitted by the light-emitting element 300 in the contact region CA and also to transmit electrical signals in the line region LA as described above, the thicknesses of the first contact electrode 711 and the second contact electrode 712, the third contact electrode 610, and the first pattern 720 can be suitably or appropriately determined. In an exemplary embodiment, the first thickness d1 of the third contact electrode 610 can be... to Within, but not limited to, the second thickness d2 of the first contact electrode 711 and the second contact electrode 712 can be within the range of, but not limited to, this range. to Within this range, but not limited to this.

[0202] refer to Figure 7 The third contact electrode 610 located in the line region LA (e.g., the third region 620 of the third contact electrode 610) can be in direct contact (e.g., physical contact) with the first pattern 720 located in the line region LA. As described above, the electrical signal transmitted from the first electrode 211 to the first region 611 of the third contact electrode 610 via the first light-emitting element 300 can be transmitted to the second region 612 of the third contact electrode 610 via the third region 620 located in the line region LA. Therefore, the conductive layer transmitting the electrical signal in the line region LA must have low resistance. Therefore, by directly disposing the lower surface of the first pattern 720 having a second thickness d2 on the surface of the third region 620 having a first thickness d1 of the third contact electrode 610 in the line region LA, the resistance of the line in the line region LA can be reduced. For example, the first pattern 720 is patterned in the line region LA and is also located on the third contact electrode 610, and therefore, the thickness d5 of the conductive layer transmitting the electrical signal in the line region LA can be equal to the sum of the first thickness d1 and the second thickness d2. Therefore, the thickness of the conductive layer can be increased compared to when only the third contact electrode 610 is located in the line region LA, thereby reducing the resistance.

[0203] According to an exemplary embodiment, the third contact electrode 610 may include crystalline ITO. Since the third contact electrode 610 includes crystalline ITO, the transmittance of light generated and emitted from the light-emitting element 300 can be increased compared to a third contact electrode including amorphous ITO. Therefore, the brightness of the display device 10 can be increased.

[0204] In the following text, reference will be made to Figures 8 to 20 The process of manufacturing the display device 10 according to an exemplary embodiment is described.

[0205] Figure 8 and Figure 9 This is a cross-sectional view illustrating some processing steps in manufacturing a display device according to an exemplary embodiment of the present disclosure. Figure 10 It is shown in Figure 8 and Figure 9 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0206] First, prepare the target substrate SUB. In the following description, the target substrate SUB may have the same characteristics as... Figure 4The circuit element layer PAL shown includes a substrate 110 and multiple conductive and insulating layers located on the substrate 110, which have substantially the same cross-sectional structure. In the following description, for ease of illustration, the circuit element layer PAL is depicted as the target substrate SUB, and its cross-sectional structure is not required to be described further here.

[0207] Subsequently, reference Figure 8 and Figure 10 A first embankment 400 is formed on the target substrate SUB. The first embankment 400 may include a first sub-embankment 410 and a second sub-embankment 420. The first embankment 400 may have a shape that protrudes from the upper surface of the target substrate SUB. A description thereof has been given above.

[0208] Subsequently, reference Figure 9 and Figure 10 Electrode layers 200 are formed on the first sub-dike portion 410 and the second sub-dike portion 420. Electrode layers 200 include a first electrode layer 210 on the first sub-dike portion 410 and a second electrode layer 220 on the second sub-dike portion 420. The first electrode layer 210 may include a first electrode 211 and a first electrode pattern 212, which are symmetrical about each other with respect to a line extending through the center point of the emission region EMA and in the second direction DR2. The second electrode layer 220 may include a second electrode 222 and a second electrode pattern 221, which are symmetrical about each other with respect to a line extending through the center point of the emission region EMA and in the second direction DR2. The first electrode 211, the first electrode pattern 212, the second electrode 222, and the second electrode pattern 221 may include the same (e.g., substantially the same) material and may be formed together via the same (e.g., substantially the same) process.

[0209] The first electrode 211, the first electrode pattern 212, the second electrode 222, and the second electrode pattern 221 may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1. The electrode layer 200 may be formed by patterning the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212 such that they are arranged sequentially from left to right when viewed from top.

[0210] In some implementations, reference Figure 3The first electrode layer 210 can extend along the second direction DR2 without being cut in the cut region CBA. The first electrode 211 and the first electrode pattern 212 extending in the second direction DR2 can receive voltage from the pads respectively. The second electrode layer 220 may also include a region in the cut region CBA electrically connected between the second electrode 222 and the second electrode pattern 221. Therefore, the first electrode 211, the first electrode pattern 212 and the second electrode layer 220 can receive their respective voltages from the pads. After the light-emitting element 300 is arranged and aligned in a subsequent process, the first electrode 211, the second electrode pattern 221, the second electrode 222 and the first electrode pattern 212 are separated in the cut region CBA from the first electrode 211, the second electrode pattern 221, the second electrode 222 and the first electrode pattern 212 of another pixel PX adjacent to the pixel PX in the second direction DR2, so that the first electrode layer 210 and the second electrode layer 220 can be formed. Figure 2 The electrode layer 200 shown.

[0211] Figure 11 This is a cross-sectional view illustrating a portion of the manufacturing process steps of a display device according to an exemplary embodiment of the present disclosure. Figure 12 It is shown in Figure 11 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0212] Subsequently, reference Figure 11 and Figure 12 A first insulating layer 510, a plurality of light-emitting elements 300, and a second insulating layer 520 are formed on the electrode layer 200.

[0213] For example, a first insulating layer 510 covering the electrode layer 200 is formed on a target substrate SUB on which a first embankment 400 and an electrode layer 200 are formed.

[0214] In the contact area CA, a first insulating layer 510 exposes at least a portion of each of the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212, and may be located between the first electrode 211 and the second electrode pattern 221, between the second electrode pattern 221 and the second electrode 222, and between the second electrode 222 and the first electrode pattern 212. The first insulating layer 510 insulates the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212 from each other.

[0215] In the line region LA, the first insulating layer 510 may be completely located on the target substrate SUB. In the line region LA, the first insulating layer 510 may cover the second electrode layer 220 that overlaps with the line region LA.

[0216] Subsequently, a second embankment 800 is formed on the first insulating layer 510.

[0217] Subsequently, a plurality of light-emitting elements 300 are disposed between the first sub-dike portion 410 and the second sub-dike portion 420. The plurality of light-emitting elements 300 may include a first light-emitting element 300 located on the first insulating layer 510 between the first electrode 211 and the second electrode pattern 221, and a second light-emitting element 300 located on the first insulating layer 510 between the second electrode 222 and the first electrode pattern 212.

[0218] The light-emitting element 300 can be dispersed in ink and sprayed onto a target substrate SUB. In an exemplary embodiment, the light-emitting element 300 can be prepared such that it is dispersed in ink containing a solvent, and can be sprayed onto the target substrate SUB via a printing process using an inkjet printing apparatus. The ink sprayed from the inkjet printing apparatus can settle in the area surrounded by a second dam 800. The second dam 800 can prevent or reduce ink spillage onto other adjacent pixels PX.

[0219] When ink containing the light-emitting element 300 is sprayed, an electrical signal is applied to each of the first electrode 211, the first electrode pattern 212, and the second electrode layer 220 to align the light-emitting element 300 on the first insulating layer 510. When the electrical signals are applied to the first electrode 211, the first electrode pattern 212, and the second electrode layer 220 respectively, electric fields can be generated between the first electrode 211 and the second electrode pattern 221, and between the second electrode 222 and the first electrode pattern 212. The light-emitting element 300 dispersed in the ink can be subjected to the dielectric force of the electric field, and therefore, the light-emitting element 300 subjected to the dielectric force can be positioned on the first insulating layer 510 while changing its orientation and position.

[0220] Both ends of each of the light-emitting elements 300 on the first insulating layer 510 may be located on the electrode layer 200. The orientation of the first semiconductor layer 310 of the first light-emitting element 300 located between the first electrode 211 and the second electrode pattern 221 may differ from the orientation of the first semiconductor layer 310 of the second light-emitting element 300 located between the second electrode 222 and the first electrode pattern 212. For example, the first light-emitting element 300 may be aligned on the first insulating layer 510 between the first electrode 211 and the second electrode pattern 221, such that the ends of the first semiconductor layer 310 of the first light-emitting element 300 are located on the second electrode pattern 221. For example, the second light-emitting element 300 may be aligned on the first insulating layer 510 between the second electrode 222 and the first electrode pattern 212, such that the ends of the first semiconductor layer 310 of the second light-emitting element 300 are located on the second electrode 222. For example, the end of each of the light-emitting elements 300 on which the first semiconductor layer 310 is disposed may be defined as a first end. Then, when viewed from above, in pixel PX, the first end of the light-emitting element 300 located on the upper left and the first end of the light-emitting element 300 located on the upper right can face opposite directions.

[0221] Subsequently, a second insulating layer 520 is formed on the plurality of light-emitting elements 300. The second insulating layer 520 can be formed by completely stacking a second insulating material layer on a target substrate SUB on which the light-emitting elements 300 and the first insulating layer 510 are formed, and then removing a portion of the second insulating material layer, thereby exposing the first end and other ends (hereinafter also referred to as the second end) of the light-emitting elements 300. The second insulating layer 520 may include openings that expose both ends of the light-emitting elements 300 and a portion of the electrode layer 200. A first contact electrode 711, a second contact electrode 712, and a third contact electrode 610 may be located on the two ends of the light-emitting elements 300 exposed through the openings and the portions of the electrode layer 200 exposed through the openings.

[0222] Subsequently, a process is performed to cut portions of the first electrode layer 210 and the second electrode layer 220 located in the cutting region CBA to form the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212. Through the cutting process, electrical signals for aligning the light-emitting element 300 can be applied to the electrode layers 210 and 220 connected to the light-emitting element 300, and the electrode layers 200 (e.g., the first electrode 211, the second electrode pattern 221, the second electrode 222, and the first electrode pattern 212) can be separated in the cutting region CBA to form electrodes for driving the display device 10. Therefore, the first electrode 211 and the second electrode 222 in each of the pixels PX can be driven individually by a transistor in each of the pixels PX.

[0223] Figure 13 and Figure 14 This is a cross-sectional view illustrating some processing steps in manufacturing a display device according to an exemplary embodiment of the present disclosure. Figure 15 It is shown in Figure 14 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0224] Subsequently, reference Figure 13 A first contact electrode material pattern 610' is formed on the electrode layer 200. In an exemplary embodiment, the first contact electrode material pattern 610' is formed on the first electrode pattern 212 and the second electrode pattern 221 of the electrode layer 200. The patterned first contact electrode material pattern 610' can be formed via the same (e.g., substantially the same) masking process. For example, the first region 611' of the first contact electrode material pattern 610' located on the second electrode pattern 221 in the contact region CA, the second region 612' of the first contact electrode material pattern 610' located on the first electrode pattern 212 in the contact region CA, and the third region 620' of the first contact electrode material pattern 610' located on the first insulating layer 510 in the line region LA can be formed via the same (e.g., substantially the same) masking process.

[0225] In some embodiments, a first contact electrode material layer is deposited on the entire surface of the target substrate SUB. Subsequently, a photoresist layer is applied to the first contact electrode material layer, and a photoresist pattern is formed by exposure and development. Etching is then performed using this photoresist pattern as an etching mask. Typically, etching of the first contact electrode material layer can be performed by wet etching, but is not limited to this. The photoresist pattern is then removed via a stripping or ashing process. The first contact electrode material layer may include, but is not limited to, amorphous ITO. Therefore, the first contact electrode material pattern 610' may include amorphous ITO. The thickness of the first contact electrode material pattern 610' can be... to Within this range, but not limited to this.

[0226] Subsequently, reference Figure 14A heat treatment can be performed on the first contact electrode material pattern 610' formed on the target substrate SUB. The heat treatment can be performed at a temperature of 200°C to 270°C for 10 to 20 minutes. However, it should be understood that the present disclosure is not limited thereto. Amorphous ITO can be transformed into crystalline ITO by heat treatment. Therefore, a third contact electrode 610 comprising crystalline ITO can be formed by heat treatment. According to this exemplary embodiment, amorphous ITO, which has a higher etch selectivity than crystalline ITO relative to the same etchant, is completely deposited as the first contact electrode material layer and is etched. Therefore, the patterning process can be made easier. Subsequently, when the third contact electrode 610 comprising crystalline ITO is formed on the amorphous ITO via the heat treatment process, damage to the third contact electrode 610 caused by the etchant used to etch the material included in the first contact electrode 711, the second contact electrode 712, and the first pattern 720 can be prevented or reduced. Further description thereof will be provided below.

[0227] Figure 16 This is a cross-sectional view illustrating a portion of the manufacturing process steps of a display device according to an exemplary embodiment of the present disclosure. Figure 17 It is shown in Figure 16 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0228] Subsequently, a third insulating layer 530 can be formed on the third contact electrode 610. The patterned third insulating layer 530 can be formed by completely depositing a material layer for the third insulating layer 530 onto the target substrate SUB and forming a first opening OP1 and a second opening OP2 exposing a portion of the contact region CA and a third opening OP3 exposing a portion of the line region LA. Therefore, the third insulating layer 530, the first opening OP1, the second opening OP2, and the third opening OP3 can be formed via the same (e.g., substantially the same) masking process. For example, the third insulating layer 530 can be made of inorganic and / or organic materials. The third insulating layer 530 can be formed by applying a material layer for the third insulating layer 530 and then forming the first opening OP1, the second opening OP2, and the third opening OP3 by exposure and development.

[0229] In the contact area CA, the first opening OP1 may expose the portion of the first electrode 211 exposed by the first insulating layer 510 and the other end of the light-emitting element 300 (hereinafter also referred to as the first light-emitting element 300) located on the upper left side (e.g., the opposite end of the light-emitting element 300 that is in contact (e.g., physical contact) with the first region 611 of the third contact electrode 610, hereinafter also referred to as the second end). The other end of the first light-emitting element 300 exposed via the first opening OP1 (the second end) may be the end region of the first light-emitting element 300 exposed by the second insulating layer 520.

[0230] In the contact area CA, the second opening OP2 can expose the portion of the second electrode 222 exposed by the first insulating layer 510 and the first end of the light-emitting element 300 (hereinafter also referred to as the second light-emitting element 300) located on the right side (e.g., the opposite end of the light-emitting element 300 that contacts (e.g., physically contacts) the second region 612 of the third contact electrode 610, i.e., the second end, which may be the end of the light-emitting element 300 provided with the first semiconductor layer 310). The first end of the second light-emitting element 300 exposed via the second opening OP2 may be the end region of the second light-emitting element 300 exposed by the second insulating layer 520.

[0231] The third opening OP3 may overlap with the third region 620 of the third contact electrode 610 located in the line region LA. Through the third opening OP3, at least a portion of the third region 620 of the third contact electrode 610 located in the line region LA may be exposed on the third-direction DR3.

[0232] Figure 18 This is a cross-sectional view illustrating a portion of the manufacturing process steps of a display device according to an exemplary embodiment of the present disclosure. Figure 19 It is shown in Figure 18 A plan view of the emission area of ​​a pixel during the manufacturing process.

[0233] Subsequently, a first contact electrode 711, a second contact electrode 712, and a first pattern 720 are formed on the third insulating layer 530. The first contact electrode 711, which coincides with the first opening OP1, located on the first electrode 211 in the contact region CA, the second contact electrode 712, which coincides with the second opening OP2, located on the second electrode 222 in the contact region CA, and the first pattern 720, which coincides with the third opening OP3, located on the third region 620 of the third contact electrode 610 in the line region LA, can be formed via the same (e.g., substantially the same) masking process.

[0234] In some embodiments, a second contact electrode material layer is deposited on the entire surface of the target substrate SUB. Subsequently, a photoresist layer is applied to the second contact electrode material layer, and a photoresist pattern is formed by exposure and development. Etching is then performed using this photoresist pattern as an etching mask. Typically, etching of the second contact electrode material layer can be performed by wet etching, but is not limited to this. The photoresist pattern is subsequently removed via a lift-off process or an ashing process. The second contact electrode material layer may include amorphous ITO and / or crystalline ITO, but is not limited to this. The thickness of each of the first contact electrode 711, the second contact electrode 712, and the first pattern 720 may vary. to Within this range, but not limited to this.

[0235] According to this exemplary embodiment, in the process of forming the third contact electrode 610 as described above, the third contact electrode 610 includes crystalline ITO via a heat treatment process for crystallizing amorphous ITO into crystalline ITO, and thus, damage to the third contact electrode 610 caused by etchant during the etching process for forming the first contact electrode 711, the second contact electrode 712 and the first pattern 720 can be prevented or reduced.

[0236] In some embodiments, the third insulating layer 530 may be located on the first region 611 and the second region 612 of the third contact electrode 610 located in the contact region CA. Therefore, the first region 611 and the second region 612 of the third contact electrode 610 located in the contact region CA are not exposed to the etchant because of the third insulating layer 530 covering them, and thus damage to the first region 611 and the second region 612 of the third contact electrode 610 can be prevented or reduced.

[0237] In some embodiments, as described above, the third insulating layer 530 may not be located on the third region 620 of the third contact electrode 610 located in the line region LA. For example, the third insulating layer 530 may not be located on the third contact electrode 610 (e.g., on the third region 620 located in the line region LA), such that the third region 620 may be exposed on the third-direction DR3 by the third insulating layer 530. Incidentally, as described above, the third region 620 may comprise crystalline ITO via a heat treatment process. According to this exemplary embodiment, even though the third region 620 is exposed on the third-direction DR3 because the third insulating layer 530 is not located thereon, because the third region 620 comprises crystalline ITO, the third region 620 may not be etched even if it is exposed to an etchant for etching amorphous ITO during the process of forming the first pattern 720. Therefore, although the third contact electrode 610 and the first pattern 720 (or the first contact electrode 711 and the second contact electrode 712) contain the same (e.g., substantially the same) material (e.g., ITO) and are exposed to the etchant in each etching process, damage to the third contact electrode 610 and the first pattern 720 (or the first contact electrode 711 and the second contact electrode 712) caused by the etchant can be prevented or reduced because the third region 620 of the third contact electrode 610, which is consistent with the line region LA, contains crystalline ITO.

[0238] Figure 20 This is a cross-sectional view illustrating a portion of the manufacturing process steps of a display device according to an exemplary embodiment of the present disclosure.

[0239] Subsequently, reference Figure 20A fourth insulating layer 540 is formed completely on the target substrate SUB. The fourth insulating layer 540 may be formed to completely cover the elements on the target substrate SUB. According to an exemplary embodiment, the fourth insulating layer 540 may completely cover the second embankment 800, the third insulating layer 530, the first contact electrode 711, the second contact electrode 712, and the third contact electrode 610, as well as the first pattern 720, located on the target substrate SUB.

[0240] In the following description, other exemplary embodiments of the display device according to the present disclosure will be described with reference to the remaining drawings.

[0241] Figure 21 This is a plan view illustrating the relative arrangement of the light-emitting element, multiple contact electrodes, and a first pattern according to another exemplary embodiment.

[0242] according to Figure 21 The display device 10 of the exemplary embodiment and according to Figure 3 The difference in the exemplary embodiment of the display device 10 is that the length of the first pattern 720_1 in the first direction DR1 and the second direction DR2 may be less than the length of the third region 620 of the third contact electrode 610 in the first direction DR1 and the second direction DR2.

[0243] In some embodiments, the first pattern 720_1 may be located on the third region 620. The first pattern 720_1 may overlap with the third region 620 of the third contact electrode 610 on the third-direction DR3 and may be located on the third region 620 of the third contact electrode 610, such that the edge of the third region 620 of the third contact electrode 610 is exposed. The first pattern 720_1 may not overlap with the first region 611 and the second region 612 of the third contact electrode 610.

[0244] When viewed from above, the first pattern 720_1 may have a rectangular shape, comprising a longer side in the first direction DR1 and a shorter side in the second direction DR2. The length of the first pattern 720_1 in the first direction DR1 may be less than the length of the third region 620 of the third contact electrode 610 in the first direction DR1. The length of the first pattern 720_1 in the second direction DR2 may be less than the length of the third region 620 of the third contact electrode 610 in the second direction DR2. For example, the area of ​​the first pattern 720_1 may be less than the area of ​​the third region 620 of the third contact electrode 610 that overlaps with the first pattern 720_1, such that the third region 620 of the third contact electrode 610 may completely cover the first pattern 720_1 from below. The lower surface of the first pattern 720_1 may be in direct contact (e.g., physical contact) with the upper surface of the third region 620 of the third contact electrode 610, but not in direct contact (e.g., physical contact) with the upper surfaces of each of the first regions 611 and second regions 612 of the third contact electrode 610.

[0245] According to this exemplary embodiment, although the first pattern 720_1 is only located on the third region 620 of the third contact electrode 610, the thickness d5 of the conductive layer transmitting electrical signals in the line region LA (see Figure 7 This can be equal to the first thickness d1 of the third region 620 of the third contact electrode 610 (see...). Figure 7 The second thickness d2 of the first pattern 720_1 (see...) Figure 7 The sum of ) . For example, the thickness d5 of the conductive layer in the line region LA (see Figure 7 The thickness d1 or d2 of the contact electrode in the contact area CA that contacts (e.g., physically contacts) the end of the light-emitting element 300 is greater than the thickness d1 or d2 (see [reference]). Figure 6 This reduces the resistance of the conductive layer in the line region LA. Furthermore, since the area of ​​the first pattern 720_1 is formed smaller than the area of ​​the third region 620 of the third contact electrode 610, when viewed from above, the first pattern 720_1 is only located on the third region 620 of the third contact electrode 610. Therefore, the material cost of the first pattern 720_1 can be saved or reduced.

[0246] Figure 22 This is a plan view illustrating the relative arrangement of the light-emitting element, the plurality of contact electrodes, and the first pattern according to yet another exemplary embodiment.

[0247] according to Figure 22 The display device 10 of the exemplary embodiment and according to Figure 3 The difference between the exemplary embodiment of the display device 10 is that the former includes a plurality of first patterns 720_2 spaced apart from each other in the first direction DR1.

[0248] In some embodiments, the display device 10 may include a plurality of first patterns 720_2 located in the line region LA. The plurality of first patterns 720_2 may be located on the third region 620 of the third contact electrode 610. The plurality of first patterns 720_2 may be located on the third region 620 of the third contact electrode 610 such that the plurality of first patterns 720_2 are spaced apart from each other in the first direction DR1. Although the first patterns 720_2 are arranged in a single row in the first direction DR1 (the direction of the longer side of the third region 620 of the third contact electrode 610) in the figures, this disclosure is not limited thereto. The first patterns 720_2 may be arranged in a matrix pattern along the first direction DR1 and the second direction DR2 on the third region 620 of the third contact electrode 610, wherein the first direction DR1 is the direction of the longer side of the third region 620 of the third contact electrode 610, and the second direction DR2 is the direction of the shorter side of the third region 620 of the third contact electrode 610.

[0249] The length of the first pattern 720_2 in the first direction DR1 may be less than the length of the third region 620 of the third contact electrode 610 in the first direction DR1. The length of the first pattern 720_2 in the second direction DR2 may be greater than the length of the third region 620 of the third contact electrode 610 in the second direction DR2. The third region 620 of the third contact electrode 610 may be exposed on the third direction DR3 in the space between the first patterns 720_2 that are adjacent to each other in the first direction DR1. The fourth insulating layer 540 may be located on the surface of the third contact electrode 610 where the third region 620 is not provided with the first pattern 720_2. According to this exemplary embodiment of the present disclosure, the first pattern 720_2 is formed by patterning the first pattern 720_2 only on the third region 620 of the third contact electrode 610, thereby saving or reducing material costs.

[0250] Figure 23 This is a plan view illustrating the relative arrangement of the light-emitting element, the plurality of contact electrodes, and the first pattern according to yet another exemplary embodiment. Figure 24 It is along Figure 23 A cross-sectional view of the display device taken by line XXIV-XXIV'.

[0251] according to Figure 23 and Figure 24 The display device 10 of the exemplary embodiment and according to Figure 3 and Figure 4 The difference in the exemplary embodiment of the display device 10 is that the third insulating layer 530_2 is located in the online region LA between the third contact electrode 610 and the first pattern 720.

[0252] For example, combining Figure 4 and Figure 16 refer to Figure 23 and Figure 24 The third insulating layer 530_2 is entirely located on the substrate 110, and at least a portion of the first electrode 211 and the second electrode 222 may be exposed in the contact region CA. Furthermore, the third insulating layer 530_2 may be located in the line region LA on the third region 620 of the third contact electrode 610, and may include a plurality of contact holes PCNTs penetrating the third insulating layer 530_2. The plurality of contact holes PCNTs formed in the third insulating layer 530_2 in the line region LA may expose a portion of the upper surface of the third region 620 of the third contact electrode 610 beneath it on the third-direction DR3.

[0253] In the line region LA, the first pattern 720 may be located on the third insulating layer 530_2. For example, the first pattern 720 may be located on the third insulating layer 530_2 in the line region LA and may contact the third region 620 of the third contact electrode 610 through a plurality of contact holes PCNTs penetrating the third insulating layer 530_2 (e.g., physical contact). The lower surface of the first pattern 720 that overlaps with the plurality of contact holes PCNTs in the line region LA may directly contact the upper surface of the third region 620 of the third contact electrode 610 (e.g., physical contact). The lower surface of the first pattern 720 that does not overlap with the plurality of contact holes PCNTs in the line region LA may directly contact the upper surface of the third insulating layer 530_2 (e.g., physical contact).

[0254] According to an exemplary embodiment of this disclosure, during the manufacturing process of forming the third insulating layer 530_2 on the substrate 110, the third insulating layer 530_2 may be formed such that a first opening OP1 is formed in the contact region CA to expose the other ends (second ends) of the first electrode 211 and the first light-emitting element 300, and a second opening OP2 is formed to expose the second electrode 222 and the first ends of the second light-emitting element 300, while no third opening OP3 is formed in the line region LA (see [link]). Figure 16 The third insulating layer 530_2 is also located in the line region LA, and the first pattern 720 contacts the third region 620 of the third contact electrode 610 through a plurality of contact holes PCNT penetrating the third insulating layer 530_2 (e.g., physical contact), thereby increasing the total area of ​​the conductive layer in the line region LA and thus reducing the total resistance.

[0255] Furthermore, according to an exemplary embodiment of this disclosure, the third insulating layer 530_2 is located on the third region 620 of the third contact electrode 610 in the line region LA, and therefore, even when the third contact electrode 610 comprises the same (e.g., substantially the same) material as the first contact electrode 711 and the second contact electrode 712, damage to the third region 620 of the third contact electrode 610 caused by the etchant used during the etching process for forming the first contact electrode 711 and the second contact electrode 712 on the third insulating layer 530_2 can be prevented or reduced.

[0256] Figure 25 It shows along Figure 2 and Figure 3 Another example of a display device is a cross-sectional view taken by lines Qa-Qa' and Qb-Qb'.

[0257] Figure 25 Exemplary implementation methods and Figure 4 The difference in the exemplary implementation is that the first contact electrode 711_1, the second contact electrode 712_1, and the third contact electrode 610 are formed on the same layer.

[0258] In some embodiments, the first contact electrode 711_1 and the second contact electrode 712_1 may be formed on the same layer as the third contact electrode 610. Since the first contact electrode 711_1 and the second contact electrode 712_1 are formed on the same layer as the third contact electrode 610, the third insulating layer 530_1 may be located on the first contact electrode 711_1, the second contact electrode 712_1, and the third contact electrode 610. Therefore, a portion of the first contact electrode 711_1 and the second contact electrode 712_1 may be directly located on the second insulating layer 520 within the contact region CA. The first regions 611 of the first contact electrode 711_1 and the third contact electrode 610 may be spaced apart from each other on the second insulating layer 520. Similarly, the second regions 612 of the second contact electrode 712_1 and the third contact electrode 610 may be spaced apart from each other on the second insulating layer 520.

[0259] The third insulating layer 530_1 may expose at least a portion of the third region 620 of the third contact electrode 610 located in the line region LA. The third insulating layer 530_1 may not overlap with the third region 620 of the third contact electrode 610 on the third direction DR3. The first pattern 720_1 may contact (e.g., make physical contact) at least a portion of the third region 620 of the third contact electrode 610 exposed by the third insulating layer 530_1.

[0260] The first contact electrode 711_1, the second contact electrode 712_1, and the third contact electrode 610 can be formed together via a patterning process. Since the first contact electrode 711_1, the second contact electrode 712_1, and the third contact electrode 610 are formed together, the first pattern 720_1 can be formed via a subsequent process after the first contact electrode 711_1, the second contact electrode 712_1, and the third contact electrode 610 have been formed.

[0261] When the first pattern 720_1 is formed via a subsequent process after the first contact electrode 711_1, the second contact electrode 712_1, and the third contact electrode 610 have been formed, the third insulating layer 530_1 is located on the first contact electrode 711_1, the second contact electrode 712_1, and the third contact electrode 610 to cover them. Therefore, damage to the first contact electrode 711_1, the second contact electrode 712_1, and the third contact electrode 610 caused by the etchant used to etch the material included in the first pattern 720_1 during the etching process of forming the first pattern 720_1 can be prevented or reduced.

[0262] In an exemplary embodiment, the first contact electrode 711, the second contact electrode 712, and the third contact electrode 610 may comprise crystalline ITO, and the first pattern 720_1 may comprise amorphous ITO and / or crystalline ITO. As described above, because the first contact electrode 711, the second contact electrode 712, and the third contact electrode 610 comprise crystalline ITO, even if the third region 620 of the third contact electrode 610 is exposed by the third insulating layer 530_1, damage to the third region 620 of the third contact electrode 610 caused by the etchant used to etch the material included in the first pattern 720 can be prevented or reduced.

[0263] In concluding this detailed description, those skilled in the art will understand that many variations and modifications can be made to the exemplary embodiments without substantially departing from the principles of this disclosure. Therefore, the disclosed embodiments are used in a general and descriptive sense only and not for limiting purposes.

Claims

1. A display device, comprising: Substrate, including contact region and line region; A first electrode extends on the substrate in a first direction; A first electrode pattern extends on the substrate in the first direction and is spaced apart from the first electrode; The second electrode extends on the substrate in the first direction and is located between the first electrode and the first electrode pattern; A second electrode pattern extends on the substrate in the first direction and is located between the first electrode and the second electrode; A first light-emitting element is located in the contact area between the first electrode and the second electrode pattern; A first contact electrode is located on the first electrode in the contact area and is in contact with the first end of the first light-emitting element; The second contact electrode includes a first region and a second region, wherein the first region is located on the second electrode pattern in the contact region and contacts a second end of the first light-emitting element, and wherein the second region extends from the first region and is located in the line region; and The first pattern is located on the second region within the line region. The first pattern includes a conductive material and is in contact with the second region.

2. The display device according to claim 1, wherein, The first pattern is in physical contact with the second region.

3. The display device according to claim 1, wherein, The first pattern comprises the same material as the first contact electrode.

4. The display device according to claim 1, further comprising a second light-emitting element located in the contact area between the second electrode and the first electrode pattern.

5. The display device according to claim 4, further comprising a third contact electrode located on the second electrode in the contact region, and the third contact electrode contacting a first end of the second light-emitting element. in, The second contact electrode further includes a third region extending from the second region to lie on the first electrode pattern in the contact region and to contact the second end of the second light-emitting element.

6. The display device according to claim 5, wherein, The third contact electrode comprises the same material as the first contact electrode.

7. The display device according to claim 1, further comprising an insulating layer located on the second contact electrode, in, The insulating layer exposes at least a portion of the second region in the line region and covers the first region in the contact region.

8. The display device according to claim 7, wherein, The first pattern is in physical contact with at least a portion of the second region exposed by the insulating layer.

9. The display device according to claim 8, wherein, The upper surface of the second region is in direct contact with the lower surface of the first pattern.

10. The display device according to claim 1, further comprising an insulating layer located on the second contact electrode, in, The insulating layer is located in the line region between the first pattern and the second region, and includes a plurality of contact holes penetrating the insulating layer to expose a portion of the second region.

11. The display device according to claim 10, wherein, The first pattern is in direct contact with the second region through the plurality of contact holes that penetrate the insulating layer.

12. The display device according to claim 1, wherein, The thickness of the first contact electrode, the thickness of the second contact electrode, and the thickness of the first pattern are each in the range of 150 Å to 1000 Å.

13. A display device, comprising: Substrate; An electrode layer is located on the substrate and includes a first electrode, a first electrode pattern spaced apart from the first electrode, a second electrode located between the first electrode and the first electrode pattern, and a second electrode pattern located between the first electrode and the second electrode. Multiple light-emitting elements are located on the electrode layer, including a first light-emitting element and a second light-emitting element, wherein the two ends of the first light-emitting element are respectively located on the first electrode and the second electrode pattern, and wherein the two ends of the second light-emitting element are respectively located on the second electrode and the first electrode pattern; A first contact electrode is located on the first electrode to overlap with the first electrode and to contact the first end of the first light-emitting element; The second contact electrode is located on the second electrode to overlap with the second electrode and to contact the first end of the second light-emitting element; The third contact electrode is located on the electrode layer and includes a first region, a second region and a third region, wherein the first region overlaps with the second electrode pattern and contacts the second end of the first light-emitting element, the second region overlaps with the first electrode pattern and contacts the second end of the second light-emitting element, and the third region connects the first region and the second region. An insulating layer is located on the third contact electrode; and The first pattern is located in the third region. The first pattern includes a conductive material and is in contact with the third region.

14. The display device according to claim 13, wherein, The insulating layer covers the first region and the second region and exposes at least a portion of the third region.

15. The display device according to claim 14, wherein, The first pattern is in physical contact with at least a portion of the third region exposed by the insulating layer.

16. The display device according to claim 15, wherein, The third contact electrode comprises crystalline indium tin oxide, and The first pattern comprises crystalline indium tin oxide and / or amorphous indium tin oxide.

17. A method for manufacturing a display device, the method comprising: An electrode layer comprising a first electrode layer and a second electrode layer spaced apart from each other is formed on a target substrate including a line region and a contact region, and a plurality of light-emitting elements are disposed between the first electrode layer and the second electrode layer in the contact region; A contact electrode material pattern is formed on the electrode layer; The contact electrode is formed by performing heat treatment on the contact electrode material pattern; as well as A first pattern is formed on the contact electrode in the line region. The first pattern comprises a conductive material and is in contact with the contact electrode.

18. The method according to claim 17, wherein, Forming the contact electrode includes forming the contact electrode comprising crystalline indium tin oxide by performing a heat treatment on a contact electrode material pattern comprising amorphous indium tin oxide, and The heat treatment is performed at a temperature of 200°C to 270°C for 10 to 20 minutes.

19. The method of claim 17, further comprising forming an insulating layer on the contact electrode prior to forming the first pattern. in, The insulating layer exposes at least a portion of the contact electrode in the line region, and The first pattern is located on at least a portion of the contact electrode exposed by the insulating layer.

20. The method of claim 17, wherein, The first electrode layer includes a first electrode and a first electrode pattern spaced apart from the first electrode. The second electrode layer includes a second electrode located between the first electrode and the first electrode pattern, and a second electrode pattern located between the first electrode and the second electrode. The contact electrode includes a first region located on the second electrode pattern in the contact region, a second region located on the first electrode pattern in the contact region, and a third region located between the second region and the first region in the line region. The first pattern is located on the third region.

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