Light-emitting diode chip with reduced voltage and preparation method thereof

By adopting a composite transparent conductive layer structure in the light emitting diode chip, the problem of difficulty in taking into account both voltage reduction and brightness improvement in the prior art is solved, and uniform current transmission and high brightness light output effect are achieved.

CN113809213BActive Publication Date: 2025-03-28HC SEMITEK (SUZHOU) CO LTD
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Patent Information

Application Number
CN202110856930.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-07-28
Publication Date
2025-03-28
Estimated Expiration
2041-07-28

AI Technical Summary

Technical Problem

It is difficult for existing light emitting diode chips to take into account both high brightness while reducing the voltage, mainly because the mass of the current barrier layer and the transparent conductive layer are uneven during growth.

Method used

A composite transparent conductive layer is adopted, including a first transparent conductive layer and a second transparent conductive layer stacked in sequence, the first transparent conductive layer covers all surfaces of the current barrier layer, and the second transparent conductive layer overlaps with the orthogonal profile of the current barrier layer, so that uniform transmission of current and good ohmic contact are achieved through this structure.

Benefits of technology

It effectively reduces the working voltage of the light emitting diode, and improves the brightness and light output uniformity, avoiding the increase in body resistance caused by excessive concentration of current.

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Abstract

The present invention discloses a light-emitting diode chip with reduced voltage and a preparation method thereof, and belongs to the field of light-emitting diode production. The composite transparent conductive layer covering the current blocking layer in the epitaxial wafer includes a first transparent conductive sublayer and a second transparent conductive sublayer stacked in sequence. The first transparent conductive sublayer covers all surfaces of the current blocking layer, and the first transparent conductive sublayer has a first surface parallel to the surface of the substrate. The outer contour of the orthographic projection of the second transparent conductive sublayer on the surface of the substrate coincides with the outer contour of the orthographic projection of the current blocking layer on the surface of the substrate, and the overall current transmission is relatively uniform. The second transparent conductive sublayer is connected to the p-electrode to form a good ohmic contact while achieving good current conduction. The overall body resistance encountered by the current is reduced, the voltage required for the light-emitting diode epitaxial wafer as a whole is reduced, the light extraction rate is improved, and the brightness is also improved.
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