Display device

Abstract

A display device includes a substrate, a light emitting element on the substrate, a capping layer on the light emitting element, a thin film encapsulation layer including a first inorganic layer on the capping layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer, and a wavelength conversion pattern on the thin film encapsulation layer and overlapping the light emitting element, wherein the first inorganic layer includes two sub-inorganic layers having different refractive indexes.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0073592, filed on June 17, 2020, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to a display device. Background Technology

[0004] With the development of multimedia, display devices have become increasingly important. Therefore, various display devices such as liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays are being developed.

[0005] In commonly available display devices, self-emissive display devices include self-emissive elements such as organic light-emitting diodes (OLEDs). A self-emissive element may include two electrodes facing each other (e.g., overlapping) and an emissive layer between the two electrodes. When the self-emissive element is an organic light-emitting diode, electrons and holes supplied from the two electrodes can recombine in the emissive layer to generate excitons. As the generated excitons transition from an excited state to a ground state, light can be emitted.

[0006] Because self-emissive displays do not require a light source such as a backlight unit, they can consume very little power, be made thin and light, and have wide viewing angles, high brightness and contrast, and fast response times. Due to these high-quality characteristics, self-emissive displays have attracted attention as the next generation of display devices. Summary of the Invention

[0007] As a way to make each pixel of a display device uniquely display a primary color, a color pattern or wavelength conversion pattern can be placed in each pixel in the light path extending from the light source to the viewer.

[0008] This disclosure relates to a display device with improved reliability and light efficiency.

[0009] However, this disclosure is not limited to the aspects set forth herein. These and other aspects of the disclosure will become more apparent to those skilled in the art upon reference to the following detailed description of the disclosure.

[0010] Embodiments of the display device include: a substrate; a light-emitting element on the substrate; a capping layer on the light-emitting element; a thin-film encapsulation layer, the thin-film encapsulation layer including a first inorganic layer on the capping layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer; and a wavelength conversion pattern on the thin-film encapsulation layer and overlapping with the light-emitting element, wherein the first inorganic layer includes two sub-inorganic layers with different refractive indices.

[0011] Embodiments of the display device include: a substrate; a light-emitting element on the substrate; a thin-film encapsulation layer, the thin-film encapsulation layer including a first inorganic layer on the light-emitting element, a first organic layer on the first inorganic layer, and a second inorganic layer on the first organic layer; a wavelength conversion pattern on the thin-film encapsulation layer and overlapping with the light-emitting element; a capping layer on the wavelength conversion pattern; a color filter on the capping layer and overlapping with the wavelength conversion pattern; and an upper thin-film encapsulation layer on the color filter including a third inorganic layer, a second organic layer on the third inorganic layer, and a fourth inorganic layer on the second organic layer, wherein the third inorganic layer includes a first sub-inorganic layer on the color filter and a second sub-inorganic layer on the first sub-inorganic layer, and the refractive index of the first sub-inorganic layer is different from the refractive index of the second sub-inorganic layer. Attached Figure Description

[0012] These and / or other aspects will become apparent and more readily understood from the following description of some embodiments of the present disclosure, taken in conjunction with the accompanying drawings, in which:

[0013] Figure 1 This is a schematic perspective view of a display device according to an embodiment;

[0014] Figure 2A It is along Figure 1 A schematic cross-sectional view of the display device according to the embodiment, intercepted by line X1-X1';

[0015] Figure 2B yes Figure 2A A cross-sectional view of an example of deformation;

[0016] Figure 3 yes Figure 1 A magnified plan view of part Q1, more specifically contained in Figure 1 A schematic plan view of the display substrate in a display device;

[0017] Figure 4 yes Figure 1 A magnified plan view of part Q1, more specifically contained in Figure 1 A schematic plan view of the color conversion substrate in a display device;

[0018] Figure 5 yes Figure 3 A plan view of a deformed example;

[0019] Figure 6 yes Figure 4 A plan view of a deformed example;

[0020] Figure 7 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment, intercepted by line X3-X3';

[0021] Figure 8 yes Figure 7 Enlarged cross-sectional view of part of Q3;

[0022] Figure 9 yes Figure 8 A cross-sectional view of an example deformation of the structure shown;

[0023] Figure 10 yes Figure 7 Enlarged cross-sectional view of part of Q5;

[0024] Figure 11 It is a graph showing the change in the extinction coefficient as a function of the refractive index;

[0025] Figure 12 yes Figure 10 A cross-sectional view of an example of deformation;

[0026] Figure 13 yes Figure 10 A cross-sectional view of an example of deformation;

[0027] Figure 14 yes Figure 10 A cross-sectional view of an example of deformation;

[0028] Figure 15 This is a plan view showing a schematic arrangement of a third color filter and a color pattern in a color conversion substrate of a display device according to an embodiment;

[0029] Figure 16 This is a plan view showing a schematic arrangement of light-blocking patterns in a color conversion substrate of a display device according to an embodiment;

[0030] Figure 17 This is a plan view showing a schematic arrangement of a first color filter in a color conversion substrate of a display device according to an embodiment;

[0031] Figure 18 This is a plan view showing a schematic arrangement of a second color filter in a color conversion substrate of a display device according to an embodiment;

[0032] Figure 19This is a plan view showing a schematic arrangement of a dam-shaped pattern, a first wavelength conversion pattern, a second wavelength conversion pattern, and a light-transmitting pattern in a color conversion substrate of a display device according to an embodiment;

[0033] Figure 20 This is a view used to illustrate the reliability of the display device according to the embodiment;

[0034] Figure 21 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment, intercepted by line X3-X3';

[0035] Figure 22 It is along Figure 3 and Figure 4 A cross-sectional view of the display device according to the embodiment, intercepted by line X3-X3';

[0036] Figure 23 yes Figure 22 Enlarged cross-sectional view of part of Q7; and

[0037] Figure 24 yes Figure 23 A cross-sectional view of a deformation example. Detailed Implementation

[0038] This disclosure will now be described more fully below with reference to the accompanying drawings, in which some embodiments of the disclosure are illustrated. However, this disclosure may be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that the invention will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art. Throughout the specification, the same reference numerals refer to the same components. In the drawings, the thickness of layers and regions is exaggerated for clarity.

[0039] The terminology used herein is for the purpose of describing the disclosed embodiments only and is not intended to be limiting of this disclosure. As used herein, the singular forms “a,” “an,” and “the” are intended to also include the plural forms unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and “comprising,” when used in this specification, specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items.

[0040] It will also be understood that when an element is referred to as being "on" another element, it may be directly on the other element, or there may be one or more intermediate elements. Conversely, when an element is referred to as being "directly on" another element, there are no intermediate elements.

[0041] It will be understood that although the terms first, second, etc., may be used herein to describe various elements, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, region, layer, or portion discussed below may be referred to as the second element, component, region, layer, or portion.

[0042] Embodiments are described herein with reference to planar and cross-sectional diagrams, which are schematic illustrations of idealized embodiments of this disclosure. Therefore, variations in the illustrated shapes are contemplated due to, for example, manufacturing techniques and / or margins. Consequently, embodiments of this disclosure should not be construed as limited to the specific region shapes shown herein, but rather include shape deviations caused, for example, by manufacturing processes. Thus, the regions shown in the figures are schematic in nature and their shapes are not intended to show precise shapes of areas of the device and are not intended to limit the scope of this disclosure. As used herein, the terms “substantially,” “approximately,” “roughly,” and similar terms are used as approximate terms rather than terms of degree and are intended to take into account the inherent deviations in measurements or calculations that will be recognized by one of ordinary skill in the art.

[0043] Furthermore, any numerical range described herein is intended to include all subranges of the same numerical precision falling within said range. For example, the range "1.0 to 10.0" is intended to include all subranges between (and including) the minimum value of 1.0 and the maximum value of 10.0, that is, minimum values ​​such as 2.4 to 7.6 having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0. Any maximum numerical limit described herein is intended to include all lower numerical limits falling within it, and any minimum numerical limit described in this specification is intended to include all higher numerical limits falling within it. Therefore, the applicant reserves the right to amend this specification (including the claims) to expressly represent any subranges falling within the scope expressly represented herein.

[0044] In the following description, embodiments of the present disclosure will be described with reference to the accompanying drawings. As used herein, when describing embodiments of the present disclosure, the term "may" refers to "one or more embodiments of the present disclosure".

[0045] Figure 1This is a schematic perspective view of the display device 1 according to an embodiment. Figure 2A It is along Figure 1 A schematic cross-sectional view of the display device 1 according to the embodiment, taken by line X1-X1'. Figure 2B yes Figure 2A A cross-sectional view of a deformation example.

[0046] refer to Figure 1 , Figure 2A and Figure 2B The display device 1 can be applied to a variety of suitable electronic devices, including small to medium-sized electronic devices such as tablet PCs, smartphones, car navigation units, cameras, central information displays (CIDs) provided in automobiles, wristwatches, personal digital assistants (PDAs), portable multimedia players (PMPs), and game consoles, as well as medium to large-sized electronic devices such as televisions, billboards, monitors, desktop computers integrated with monitors, and laptop computers. However, these are merely examples, and the display device 1 can also be used in other suitable electronic devices without departing from the concept of this disclosure.

[0047] In some embodiments, the display device 1 may be rectangular in plan view. The display device 1 may include two first sides extending in a first direction X and two second sides extending in a second direction Y intersecting or crossing the first direction X. The angle between the first and second sides of the display device 1 may be a right angle. However, this disclosure is not limited thereto. For example, the angle may be curved. In some embodiments, the length of the first side may be different from the length of the second side, but this disclosure is not limited thereto. The planar shape of the display device 1 is not limited to the examples described above and may be any suitable shape such as, for example, a circular shape or other shapes.

[0048] The display device 1 may include a display area DA for displaying an image and a non-display area NDA for not displaying an image. In some embodiments, the non-display area NDA may be located around the display area DA, and for example, may surround the display area DA. A user can view the image displayed in the display area DA in the direction indicated by the arrow on a third direction Z that intersects or crosses the first direction X and the second direction Y. For example, the image can be displayed on the third direction Z (e.g., along or toward the third direction Z).

[0049] Regarding the schematic stacked structure of display device 1, in some embodiments, such as Figure 2AAs shown, the display device 1 includes a display substrate 10 and a color conversion substrate 30 facing the display substrate 10 (e.g., overlapping the display substrate 10), and may further include a sealing portion 50 for engaging the display substrate 10 and the color conversion substrate 30 and the filler 70 (e.g., filler) in the space between the display substrate 10 and the color conversion substrate 30.

[0050] The display substrate 10 may include elements and circuitry for displaying images (e.g., pixel circuitry such as transistors), a pixel defining layer for defining light-emitting and non-light-emitting areas in the display area DA, and a self-emissive element. In an exemplary embodiment, the self-emissive element may include an organic light-emitting diode (OLED), a quantum dot OLED, a micro OLED based on inorganic materials (e.g., a micro LED), and / or a nano OLED based on inorganic materials (e.g., a nano LED). For ease of description, an organic light-emitting diode will be used as the self-emissive element below.

[0051] Multiple light-emitting areas can be defined within the display area DA of the display substrate 10. For example, such as Figure 3 As described herein, a first light-emitting region LA1, a second light-emitting region LA2, and a third light-emitting region LA3 can be defined in the display substrate 10. The first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 can form a group (e.g., a "group of light-emitting regions"), and multiple such groups of light-emitting regions can be defined in the display area DA. Figure 1 The portion of the display substrate 10 corresponding to portion Q1 can represent a group of light-emitting regions. In some embodiments, the group of light-emitting regions can be repeatedly arranged along a first direction X and a second direction Y. For example, the group of light-emitting regions can be arranged in a matrix pattern in the plane defined by the first direction X and the second direction Y. The first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 will be described in more detail later.

[0052] Regarding the schematic stacked structure of the display substrate 10, the light-emitting element ED may be located on the first substrate 110, the first capping layer 160 may be located on the light-emitting element ED to cover the light-emitting element ED, and the thin-film encapsulation layer 170 may be located on the first capping layer 160 to cover the first capping layer 160. The stacked structure of the display substrate 10 will be described in more detail later.

[0053] The light-emitting element (ED) may be located in the display area DA. In some embodiments, the ED may overlap with the light-emitting area. Each ED may include an anode AE, a light-emitting layer OL on the anode AE, and a cathode CE on the light-emitting layer OL. In some embodiments, a portion of the cathode CE may also be located in the non-display area NDA. For example, the cathode CE may be a common electrode corresponding to multiple EDs. The anode AE, the light-emitting layer OL, and the cathode CE will be described in more detail later.

[0054] The first capping layer 160 may be located on the cathode CE. In some embodiments, the first capping layer 160 may be disposed in the display area DA and the non-display area NDA and may cover the light-emitting element ED. In some embodiments, the end of the first capping layer 160 may be located at a position relatively further outward than the end of the cathode CE, and the first capping layer 160 may cover the cathode CE.

[0055] In some embodiments, the end of the first capping layer 160 may be located at a position relatively farther than the sealing portion 50 and may be spaced apart from the sealing portion 50. The first capping layer 160 will be described in more detail later.

[0056] The thin-film encapsulation layer 170 may be located on the first cover layer 160. In some embodiments, the thin-film encapsulation layer 170 may be disposed in the display area DA and the non-display area NDA and may completely cover the first cover layer 160.

[0057] In some embodiments, the thin-film encapsulation layer 170 may include a first lower inorganic layer 171 located on the first capping layer 160, a first organic layer 173 located on the first lower inorganic layer 171, and a first upper inorganic layer 175 located on the first organic layer 173. In some embodiments, the ends of the first lower inorganic layer 171 and the ends of the first upper inorganic layer 175 may be located at positions relatively further outward than the first organic layer 173, and the first lower inorganic layer 171 and the first upper inorganic layer 175 may be in contact with each other in the non-display area NDA.

[0058] In some embodiments, the ends of the thin-film encapsulation layer 170 may be located relatively further outward than the ends of the first capping layer 160. For example, the ends of the first lower inorganic layer 171 and the first upper inorganic layer 175 may be located relatively further outward than the ends of the first capping layer 160, and the first lower inorganic layer 171 and the first upper inorganic layer 175 may completely cover the first capping layer 160. Therefore, moisture and / or oxygen can be prevented or blocked from penetrating into the first capping layer 160 and causing it to degrade.

[0059] The thin-film encapsulation layer 170 will be described in more detail later.

[0060] The color conversion substrate 30 may be located on the display substrate 10 and may face the display substrate 10 (e.g., overlap with the display substrate 10). In some embodiments, the color conversion substrate 30 may include a color pattern for converting the color of incident light. In some embodiments, the color conversion substrate 30 may include a color filter and / or a wavelength conversion pattern as a color pattern. In some embodiments, the color conversion substrate 30 may include both a color filter and a wavelength conversion pattern.

[0061] In the display area DA, multiple light-transmitting areas can be defined in the color conversion substrate 30. For example, as in Figure 4 As described in the text, a first light-transmitting region TA1, a second light-transmitting region TA2, and a third light-transmitting region TA3 can be defined in the color conversion substrate 30. The first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 can form a group (e.g., a "light-transmitting region group"), and multiple such light-transmitting region groups can be defined in the display area DA. Figure 1 A portion of the color conversion substrate 30 corresponding to portion Q1 can represent a group of light-transmitting regions. In some embodiments, the group of light-transmitting regions can be repeatedly arranged along a first direction X and a second direction Y and can be configured to correspond to a group of light-emitting regions. The first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 will be described in more detail later.

[0062] The sealing portion 50 may be located between the display substrate 10 and the color conversion substrate 30 in the non-display area NDA. The sealing portion 50 may be configured to run along the edges of the display substrate 10 and the color conversion substrate 30 in the non-display area NDA to surround (e.g., around) the display area DA in a plan view. The display substrate 10 and the color conversion substrate 30 may be joined to each other by the sealing portion 50.

[0063] In some embodiments, the sealing portion 50 may be made of an organic material. For example, the sealing portion 50 may be made of epoxy resin, but is not limited thereto.

[0064] In some embodiments, the sealing portion 50 may overlap with the thin-film encapsulation layer 170 of the display substrate 10. For example, as Figure 2A As shown, the sealing portion 50 may be located between the thin-film encapsulation layer 170 and the color conversion substrate 30 in the non-display area NDA. In some embodiments, the sealing portion 50 may directly contact the thin-film encapsulation layer 170. For example, as... Figure 2A As shown, the sealing portion 50 can overlap with the first lower inorganic layer 171 and the first upper inorganic layer 175 of the thin film encapsulation layer 170, and can directly contact the first upper inorganic layer 175.

[0065] However, this disclosure is not limited thereto. For example, the relationship between the sealing portion 50 and the thin-film encapsulation layer 170 can be determined according to... Figure 2B The embodiments shown. For example, such as Figure 2B As shown, the sealing portion 50 on the display substrate 10' may not overlap with the thin-film encapsulation layer 170. For example, as Figure 2B As shown, the end of the thin film encapsulation layer 170 can be located relatively inward than the sealing portion 50, and the thin film encapsulation layer 170 and the sealing portion 50 can not overlap each other.

[0066] The following will show that the substrate 10 has Figure 2A The structure shown is described as an example. However, this disclosure is not limited thereto. For example, the relationship between the sealing portion 50 on the display substrate 10' and the thin-film encapsulation layer 170 in the embodiment described later can also be determined according to... Figure 2B The embodiment shown.

[0067] The filler 70 may be located in the space between the display substrate 10 and the color conversion substrate 30 and surrounded (e.g., partially or completely surrounded) by the sealing portion 50. The filler 70 may fill the space between the display substrate 10 and the color conversion substrate 30.

[0068] In some embodiments, filler 70 may be made of a light-transmitting material. In some embodiments, filler 70 may be made of an organic material. For example, filler 70 may be made of a silicon-based organic material, an epoxy-based organic material, or a mixture of silicon-based organic materials and epoxy-based organic materials.

[0069] In some embodiments, the filler 70 may be made of a material having a substantially zero extinction coefficient. The refractive index (refractive index) is related to the extinction coefficient, and the extinction coefficient decreases as the refractive index decreases. Furthermore, when the refractive index is 1.7 or less, the extinction coefficient may converge to substantially zero. In some embodiments, the filler 70 may be made of a material with a refractive index of 1.7 or less. Therefore, light provided by the self-emissive element can be prevented from transmitting through the filler 70 and being absorbed by the filler 70, or light absorption can be reduced or minimized. For example, light provided by the self-emissive element and transmitted through the filler 70 can be prevented from being absorbed by the filler 70, or when light transmits through the filler 70, light absorption can be reduced or minimized. In some embodiments, the filler 70 may be made of an organic material with a refractive index of 1.4 to 1.6.

[0070] Figure 3 yes Figure 1 A magnified plan view of part Q1, more specifically contained in Figure 1 A schematic plan view of the display substrate 10 in the display device 1. Figure 4 yes Figure 1 A magnified plan view of part Q1, more specifically contained in Figure 1 A schematic plan view of the color conversion substrate 30 in the display device 1. Figure 5 yes Figure 3 A plan view of a deformed example. Figure 6 yes Figure 4 A plan view of a deformed example.

[0071] Besides reference Figure 1 and Figure 2A In addition, it also refers to Figures 3 to 6 Multiple light-emitting regions and non-light-emitting regions NLA can be defined in the display substrate 10 within the display area DA. In some embodiments, a first light-emitting region LA1, a second light-emitting region LA2, and a third light-emitting region LA3 can be defined in the display substrate 10 within the display area DA. Each of the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 can be a region from which light generated by the light-emitting element ED of the display substrate 10 is emitted, and the non-light-emitting region NLA can be a region from which no light is emitted from the display substrate 10.

[0072] In some embodiments, the light emitted from the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 may be light of a third color. In some embodiments, the third color light may be blue light and may have a peak wavelength in the range of about 440 nm to about 480 nm.

[0073] In some embodiments, the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 may form a group, and multiple such groups may be defined in the display area DA.

[0074] In some embodiments, such as Figure 3 As shown, the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 can be sequentially arranged along the first direction X. In some embodiments, the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 forming a group can be repeatedly arranged in the display area DA along the first direction X and the second direction Y.

[0075] However, this disclosure is not limited thereto, and the arrangement of the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 can be varied differently and appropriately. For example, as Figure 5 As shown, the first light-emitting region LA1 and the second light-emitting region LA2 can be adjacent to each other along the first direction X, and the third light-emitting region LA3 can be located on one side (e.g., the upper side) of the first light-emitting region LA1 and the second light-emitting region LA2 along the second direction Y.

[0076] will be as follows Figure 3 The arrangement of the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 shown in the figure will be used as an example for explanation.

[0077] In some embodiments, the non-display area NDA of the display substrate 10 may be located around the display area DA, and for example, may surround the display area DA.

[0078] Multiple light-transmitting areas and light-blocking areas BA can be defined in the color conversion substrate 30 within the display area DA. Each light-transmitting area can be an area where light emitted from the display substrate 10 is transmitted through the color conversion substrate 30 and provided to the outside of the display device 1. The light-blocking area BA can be an area where light emitted from the display substrate 10 cannot be transmitted through the color conversion substrate 30 and provided to the outside of the display device 1 (e.g., it is blocked).

[0079] In some embodiments, a first light-transmitting region TA1, a second light-transmitting region TA2, and a third light-transmitting region TA3 may be defined in the color conversion substrate 30.

[0080] The first light-transmitting region TA1 may correspond to and / or overlap with the first light-emitting region LA1. Similarly, the second light-transmitting region TA2 may correspond to and / or overlap with the second light-emitting region LA2, and the third light-transmitting region TA3 may correspond to and / or overlap with the third light-emitting region LA3.

[0081] In some embodiments, such as Figure 3 As shown, when the first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 are arranged sequentially (e.g., in a manner such that) along the first direction X, as Figure 4 As shown, the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 can be arranged sequentially (e.g., in a manner that allows them to be arranged) along the first direction X.

[0082] In some embodiments, such as Figure 5 As shown, when the first light-emitting region LA1 and the second light-emitting region LA2 are adjacent to each other along the first direction X, and the third light-emitting region LA3 is located on one side (e.g., the upper side) of the first light-emitting region LA1 and the second light-emitting region LA2 along the second direction Y, as... Figure 6 As shown, the first light-transmitting region TA1 and the second light-emitting region TA2 can be adjacent to each other along the first direction X, and the third light-transmitting region TA3 can be located on one side (e.g., the upper side) of the first light-transmitting region TA1 and the second light-transmitting region TA2 along the second direction Y.

[0083] In some embodiments, light of a third color provided by the display substrate 10 can be emitted from the display device 1 through the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3. When the light emitted from the display device 1 in the first light-transmitting region TA1 is referred to as the first output light, the light emitted from the display device 1 in the second light-transmitting region TA2 is referred to as the second output light, and the light emitted from the display device 1 in the third light-transmitting region TA3 is referred to as the third output light. The first output light can be light of a first color, the second output light can be light of a second color different from the first color, and the third output light can be light of a third color. In some embodiments, as described above, the third color light can be blue light having a peak wavelength in the range of about 440 nm to about 480 nm, and the first color light can be red light having a peak wavelength in the range of about 610 nm to about 650 nm. Additionally, the second color light can be green light having a peak wavelength in the range of about 510 nm to about 550 nm.

[0084] The light-blocking region BA may be located in the display region DA around the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 of the color conversion substrate 30. In some embodiments, the light-blocking region BA may be located (e.g., surrounding) the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3.

[0085] The structure of display device 1 will now be described in more detail.

[0086] Figure 7 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 1 according to the embodiment, taken by line X3-X3'. Figure 8 yes Figure 7 Enlarged cross-sectional view of part Q3. Figure 9 yes Figure 8 A cross-sectional view of a deformed example of the structure shown. Figure 10 yes Figure 7 A magnified cross-sectional view of part of Q5. Figure 11 It is a graph showing the change in the extinction coefficient as a function of the refractive index.

[0087] Besides reference Figure 1 and Figure 2A In addition, it also refers to Figures 7 to 11 The display device 1 may include the display substrate 10 and the color conversion substrate 30 as described above, and may further include a filler 70 located between the display substrate 10 and the color conversion substrate 30.

[0088] The description of substrate 10 will now be presented.

[0089] The first substrate 110 may be made of a light-transmitting material. In some embodiments, the first substrate 110 may be a glass substrate and / or a plastic substrate. When the first substrate 110 is a plastic substrate, it may have appropriate flexibility. In some embodiments, the first substrate 110 may further include a separate layer, such as a buffer layer or an insulating layer, located on the glass substrate and / or the plastic substrate.

[0090] In some embodiments, as described above, a first light-emitting region LA1, a second light-emitting region LA2, a third light-emitting region LA3, and a non-light-emitting region NLA can be defined in the first substrate 110.

[0091] like Figure 7 As shown, transistors T1 to T3 may be located on the first substrate 110. In some embodiments, each of transistors T1 to T3 may be a thin-film transistor. In some embodiments, the first transistor T1 may overlap with the first light-emitting region LA1, the second transistor T2 may overlap with the second light-emitting region LA2, and the third transistor T3 may overlap with the third light-emitting region LA3. Although in the figure, the first transistor T1, the second transistor T2, and the third transistor T3 overlap with the light-emitting region LA and do not overlap with the non-light-emitting region NLA, this is merely an example. In embodiments, at least one selected from the first transistor T1, the second transistor T2, and the third transistor T3 may overlap with the non-light-emitting region NLA. In some embodiments, all of the first transistor T1, the second transistor T2, and the third transistor T3 overlap with the non-light-emitting region NLA and do not overlap with the light-emitting region LA.

[0092] Multiple signal lines (e.g., gate lines, data lines, and / or power lines) for transmitting signals to each transistor may be further located on the first substrate 110.

[0093] An insulating layer 130 may be located on the first transistor T1, the second transistor T2, and the third transistor T3. In some embodiments, the insulating layer 130 may be a planarization layer. In some embodiments, the insulating layer 130 may include, for example, an organic material. For example, the insulating layer 130 may include, for example, acrylic resin, epoxy resin, imide resin, and / or ester resin. In some embodiments, the insulating layer 130 may include, for example, a photosensitive organic material.

[0094] The first anode AE1, the second anode AE2, and the third anode AE3 can be located on the insulating layer 130.

[0095] The first anode AE1 may overlap with the first light-emitting region LA1, and at least a portion of the first anode AE1 may extend into the non-light-emitting region NLA. The second anode AE2 may overlap with the second light-emitting region LA2, and at least a portion of the second anode AE2 may extend into the non-light-emitting region NLA. The third anode AE3 may overlap with the third light-emitting region LA3, and at least a portion of the third anode AE3 may extend into the non-light-emitting region NLA. The first anode AE1 may penetrate the third insulating layer 130 and may be coupled (e.g., connected) to the first transistor T1, the second anode AE2 may penetrate the third insulating layer 130 and may be coupled (e.g., connected) to the second transistor T2, and the third anode AE3 may penetrate the third insulating layer 130 and may be coupled (e.g., connected) to the third transistor T3. For example, the first anode AE1, the second anode AE2, and the third anode AE3 may be coupled (e.g., connected) to the first transistor T1, the second transistor T2, and the third transistor T3 respectively through respective contact holes in the insulating layer 130.

[0096] In some embodiments, the first anode AE1, the second anode AE2, and the third anode AE3 may be reflective electrodes. In this case, each of the first anode AE1, the second anode AE2, and the third anode AE3 may be a metal layer including, for example, metals such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), and / or chromium (Cr). In embodiments, each of the first anode AE1, the second anode AE2, and the third anode AE3 may further include a metal oxide layer stacked on the metal layer. In exemplary embodiments, each of the first anode AE1, the second anode AE2, and the third anode AE3 may have a multilayer structure such as a two-layer structure of ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF2, or a three-layer structure of ITO / Ag / ITO.

[0097] The pixel defining layer 150 may be located on the first anode AE1, the second anode AE2, and the third anode AE3. For example, the pixel defining layer 150 may cover a portion (e.g., an edge) of the first anode AE1, the second anode AE2, and the third anode AE3. The pixel defining layer 150 may have an opening exposing the first anode AE1 (e.g., the central portion of the first anode AE1), an opening exposing the second anode AE2 (e.g., the central portion of the second anode AE2), and an opening exposing the third anode AE3 (e.g., the central portion of the third anode AE3), and may define a first light-emitting region LA1, a second light-emitting region LA2, a third light-emitting region LA3, and a non-light-emitting region NLA. For example, the area of ​​the first anode AE1 exposed but not covered by the pixel defining layer 150 may be the first light-emitting region LA1. Similarly, the area of ​​the second anode AE2 exposed but not covered by the pixel defining layer 150 may be the second light-emitting region LA2, and the area of ​​the third anode AE3 exposed but not covered by the pixel defining layer 150 may be the third light-emitting region LA3. Additionally, the area where the pixel defining layer 150 is located may be the non-light-emitting region NLA.

[0098] In some embodiments, the pixel defining layer 150 may include, for example, organic insulating materials such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin and / or benzocyclobutene (BCB).

[0099] In some embodiments, the pixel defining layer 150 may overlap with the color pattern 250 described later. Additionally, the pixel defining layer 150 may further overlap with the first color filter 231 and the second color filter 233.

[0100] In some embodiments, the pixel defining layer 150 may also overlap with the embankment pattern 370 described later.

[0101] like Figure 7 As shown, the light-emitting layer OL can be located on the first anode AE1, the second anode AE2, and the third anode AE3.

[0102] In some embodiments, the light-emitting layer OL may be in the shape of a continuous layer covering the light-emitting regions LA1 to LA3 and the non-light-emitting regions NLA. For example, the light-emitting layer OL may be a common layer. The light-emitting layer OL will be described in more detail later.

[0103] like Figure 7 As shown, the cathode CE can be located on the light-emitting layer OL.

[0104] In some embodiments, the cathode CE can be translucent or transparent. When the cathode CE is translucent, it can include, for example, silver (Ag), magnesium (Mg), copper (Cu), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), LiF, molybdenum (Mo), titanium (Ti), or compounds or mixtures thereof (e.g., mixtures of Ag and Mg) or materials having a multilayer structure such as LiF / Ca or LiF / Al. Additionally, when the thickness of the cathode CE is from tens to hundreds of angstroms, the cathode CE can be translucent.

[0105] When the cathode CE is transparent, it can include, for example, a transparent conductive oxide (TCO). For example, the cathode CE can include, for example, tungsten oxide (W). x O y Titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO) and / or magnesium oxide (MgO).

[0106] The first anode AE1, the emitting layer OL, and the cathode CE can constitute the first light-emitting element ED1; the second anode AE2, the emitting layer OL, and the cathode CE can constitute the second light-emitting element ED2; and the third anode AE3, the emitting layer OL, and the cathode CE can constitute the third light-emitting element ED3. Each of the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 can emit output light LE and can provide the output light LE to the color conversion substrate 30.

[0107] like Figure 8 As shown, the output light LE ultimately emitted from the light-emitting layer OL can be a mixture of a first component LE1 and a second component LE2. Each of the first component LE1 and the second component LE2 in the output light LE can have a peak wavelength (e.g., a peak wavelength within the range of 440 nm to less than 480 nm, for example, equal to or greater than 440 nm and less than 480 nm). For example, the output light LE can be blue light.

[0108] like Figure 8As shown, in some embodiments, the light-emitting layer OL may have a structure in which multiple light-emitting layers overlap, for example, it may have a series structure. For example, the light-emitting layer OL may include: a first stack ST1 including a first light-emitting layer EML1; a second stack ST2 located on the first stack ST1 and including a second light-emitting layer EML2; a third stack ST3 located on the second stack ST2 and including a third light-emitting layer EML3; a first charge-generating layer CGL1 located between the first stack ST1 and the second stack ST2; and a second charge-generating layer CGL2 located between the second stack ST2 and the third stack ST3. The first stack ST1, the second stack ST2, and the third stack ST3 may overlap each other.

[0109] The first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3 can overlap each other.

[0110] In some embodiments, each of the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 may emit light of a third color (e.g., blue light). For example, each of the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 may be a blue emissive layer and may include (e.g.) an organic material. However, this disclosure is not limited thereto. In embodiments, at least one selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 may include (e.g.) an inorganic material that emits blue light. For example, at least one selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 may be made of an inorganic material-based light-emitting element ED or may be a part of an inorganic material-based light-emitting element ED. In some embodiments, the inorganic material-based light-emitting element ED may be an inorganic light-emitting element with a width of nanometer size.

[0111] In some embodiments, at least one selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit first blue light having a first peak wavelength, and at least another selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit second blue light having a second peak wavelength different from the first peak wavelength. For example, any one selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit first blue light having a first peak wavelength, and the other two selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit second blue light having a second peak wavelength. For example, the output light LE ultimately emitted from the emissive layer OL can be a mixture of a first component LE1 and a second component LE2, where the first component LE1 can be first blue light having a first peak wavelength, and the second component LE2 can be second blue light having a second peak wavelength.

[0112] In some embodiments, either the first peak wavelength and the second peak wavelength may be in the range of 440 nm to less than 460 nm (e.g., equal to or greater than 440 nm and less than 460 nm). The other peak wavelength may be in the range of 460 nm to 480 nm. However, the ranges of the first and second peak wavelengths are not limited to this example. For example, each of the ranges of the first and second peak wavelengths may include 460 nm. In some embodiments, either the first blue light and the second blue light may be deep blue light, and the other peak wavelength may be sky blue light.

[0113] According to some embodiments, the output light LE emitted from the emissive layer OL is blue light and may include long-wavelength components and short-wavelength components. Therefore, the emissive layer OL can ultimately (e.g., the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can work together) emit blue light with a broader emission peak as the output light LE, thereby improving color visibility at side viewing angles compared to conventional light-emitting elements that emit blue light with a sharp emission peak.

[0114] In some embodiments, each of the first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3 may include, for example, a matrix and a dopant. The matrix is ​​not particularly limited, as long as it is a commonly used or generally available material. For example, tri-(8-hydroxyquinoline)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,10-bis(naphthyl-2-yl)anthracene (ADN), 4,4',4”-tris(carbazolyl-9-yl)-triphenylamine (TCTA), 1,3,5-tris(N-phenylbenzimidazolyl-2-yl)benzene (TPBi), 3-tert-butyl-9,10-bis(naphthyl-2-yl)anthracene (TBADN), stilbeneylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP) and / or 2-methyl-9,10-bis(naphthyl-2-yl)anthracene (MADN) can be used.

[0115] Each of the first emitting layer EML1, the second emitting layer EML2, and the third emitting layer EML3 that emits blue light may include, for example, a fluorescent material containing spirocyclic-DPVBi, spirocyclic-6P, stilbene-phenylene (DSB), stilbene-arylene (DSA), polyfluorene (PFO)-based polymers, and / or poly(p-phenylenevinylene) (PPV)-based polymers. In some embodiments, a phosphorescent material containing an organometallic complex such as (4,6-F2ppy)2Irpic may be included. However, the materials emitting blue light are not limited to the examples above.

[0116] As described above, at least one selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3, and at least another selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3, can emit blue light in different wavelength ranges. To emit blue light in different wavelength ranges, the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can comprise (e.g.) the same material, and methods for adjusting the resonant distance can be utilized. In some embodiments, to emit blue light in different wavelength ranges, at least one selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3, and at least another selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3, can comprise (e.g.) different materials.

[0117] However, this disclosure is not limited thereto. Each of the first emitting layer EML1, the second emitting layer EML2, and the third emitting layer EML3 can emit blue light with a peak wavelength of 440 nm to 480 nm (e.g., a peak wavelength in the range of 440 nm to 480 nm) and can be made of the same material.

[0118] In some embodiments, at least one selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit a first blue light having a first peak wavelength, while another selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit a second blue light having a second peak wavelength different from the first peak wavelength, and the remaining one selected from the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit a third blue light having a third peak wavelength different from the first peak wavelength and the second peak wavelength. In some embodiments, any one of the first peak wavelength, the second peak wavelength, and the third peak wavelength can be in the range of 440 nm to less than 460 nm (e.g., equal to or greater than 440 nm and less than 460 nm). Another selected from the first peak wavelength, the second peak wavelength, and the third peak wavelength can be in the range of 460 nm to less than 470 nm (e.g., equal to or greater than 460 nm and less than 470 nm), and the remaining one selected from the first peak wavelength, the second peak wavelength, and the third peak wavelength can be in the range of 470 nm to 480 nm.

[0119] According to some embodiments, the output light LE emitted from the emissive layer OL is blue light and includes long-wavelength components, medium-wavelength components, and short-wavelength components. Therefore, the emissive layer OL can ultimately (e.g., the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can work together) emit blue light with a broader emission peak as the output light LE, thus improving color visibility at side viewing angles.

[0120] According to the above embodiments, compared with traditional light-emitting elements that do not employ a series structure (i.e., a structure in which multiple light-emitting layers are stacked), light efficiency can be improved and the lifespan of the display device can be extended.

[0121] In some embodiments, at least one of the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit light of a third color (e.g., blue light), and at least another of the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can emit light of a second color (e.g., green light). In some embodiments, the blue light emitted by at least one of the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 may have a peak wavelength in the range of 440 nm to 480 nm or 460 nm to 480 nm. The green light emitted by at least another of the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 may have a peak wavelength in the range of 510 nm to 550 nm.

[0122] For example, any one of the first emitting layer EML1, the second emitting layer EML2, and the third emitting layer EML3 can be a green emitting layer that emits green light, while the other two selected from the first emitting layer EML1, the second emitting layer EML2, and the third emitting layer EML3 can be blue emitting layers that emit blue light. When the other two selected from the first emitting layer EML1, the second emitting layer EML2, and the third emitting layer EML3 are blue emitting layers, the blue light emitted from the two blue emitting layers can have the same peak wavelength range or different peak wavelength ranges.

[0123] According to some embodiments, the output light LE emitted from the emissive layer OL can be a mixture of a first component LE1, which is blue light, and a second component LE2, which is green light. For example, when the first component LE1 is deep blue light and the second component LE2 is green light, the output light LE can be light with a sky blue color. Similar to the embodiments described above, the output light LE emitted from the emissive layer OL can be a mixture of blue and green light and includes both long-wavelength and short-wavelength components. Therefore, the emissive layer OL can ultimately (e.g., the first emissive layer EML1, the second emissive layer EML2, and the third emissive layer EML3 can work together) emit blue light with a broader emission peak as the output light LE, thus improving color visibility at side viewing angles. Furthermore, since the second component LE2 of the output light LE is green light, the green light component of the light supplied to the outside from the display device 1 can be compensated. Therefore, the color reproduction of the display device 1 can be improved.

[0124] In some embodiments, the green light-emitting layer among the first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3 may include, for example, a matrix and a dopant. There are no particular limitations on the matrix included in the green light-emitting layer, as long as it is a commonly used or generally available material. For example, tri-(8-hydroxyquinoline)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,10-bis(naphthyl-2-yl)anthracene (ADN), 4,4',4”-tris(carbazolyl-9-yl)-triphenylamine (TCTA), 1,3,5-tris(N-phenylbenzimidazolyl-2-yl)benzene (TPBi), 3-tert-butyl-9,10-bis(naphthyl-2-yl)anthracene (TBADN), stilbeneylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), and / or 2-methyl-9,10-bis(naphthyl-2-yl)anthracene (MADN) can be used.

[0125] The dopants included in the green emitting layer can be, for example, fluorescent materials including (e.g.) tri-(8-hydroxyquinoline)aluminum(III) (Alq3) and / or phosphorescent materials such as fac tris(2-phenylpyridine)iridium (Ir(ppy)3), bis(2-phenylpyridine)(acetylacetone)iridium(III) (Ir(ppy)2(acac)) and / or 2-phenyl-4-methylpyridineiridium (Ir(mpyp)3).

[0126] The first charge generation layer CGL1 may be located between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 can inject charge into each light-emitting layer (e.g., the first light-emitting layer EML1, the second light-emitting layer EML2, the third light-emitting layer EML3, and / or the fourth light-emitting layer EML4, e.g., the first light-emitting layer EML1 and the second light-emitting layer EML2). The first charge generation layer CGL1 can control the charge balance between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 may be disposed on the n-type charge generation layer CGL11 and may be located between the n-type charge generation layer CGL11 and the second stack ST2.

[0127] The first charge generation layer CGL1 can have a structure in which the n-type charge generation layer CGL11 and the p-type charge generation layer CGL12 are in contact with each other (e.g., in physical or direct contact). The n-type charge generation layer CGL11 is positioned closer to the first anode AE1. Figure 7 AE2, Figure 7 AE3) and the first anode AE1 in the cathode CE Figure 7AE2, Figure 7 The p-type charge generation layer CGL12 is positioned closer to the first anode AE1 (AE3). Figure 7 AE2, Figure 7 The first anode AE1 is located between the first anode AE1 (AE3) and the cathode CE. In some embodiments, the n-type charge generation layer CGL11 may be closer to the first anode AE1 than the p-type charge generation layer CGL12, and the p-type charge generation layer CGL2 may be closer to the cathode CE than the n-type charge generation layer CGL11. For example, the n-type charge generation layer CGL11 may be located between the first anode AE1 and the p-type charge generation layer CGL12, and the p-type charge generation layer CGL12 may be located between the n-type charge generation layer CGL11 and the cathode CE. The n-type charge generation layer CGL11 provides electrons to the first anode AE1 (AE3). Figure 7 AE2, Figure 7 The first light-emitting layer EML1 is adjacent to the AE3, and the p-type charge-generating layer CGL12 provides holes to the second light-emitting layer EML2 contained in the second stack ST2. Because the first charge-generating layer CGL1 is disposed between the first stack ST1 and the second stack ST2 to provide charge to each light-emitting layer, the luminous efficiency is improved and the driving voltage is reduced.

[0128] The first stack ST1 can be located at the first anode AE1 and the second anode AE2 (see...). Figure 7 ) and the third anode AE3 (see Figure 7 It may further include a first hole transport layer HTL1, a first electron blocking layer BIL1 and a first electron transport layer ETL1.

[0129] The first hole transport layer HTL1 can be located at the first anode AE1 and the second anode AE2 (see...). Figure 7 ) and the third anode AE3 (see Figure 7 The first hole transport layer HTL1 can facilitate hole transport and may include, for example, a hole transport material. The hole transport material may include, for example, but is not limited to, carbazole derivatives such as N-phenylcarbazole and / or polyvinylcarbazole; fluorene derivatives; triphenylamine derivatives such as N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD) and / or 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA); N,N'-bis(1-naphthyl)-N,N'-diphenylbenzidine (NPB); and / or 4,4'-cyclohexylenebis[N,N'-bis(4-methylphenyl)aniline] (TAPC).

[0130] The first electron blocking layer BIL1 may be located on the first hole transport layer HTL1 and may be located between the first hole transport layer HTL1 and the first light-emitting layer EML1. The first electron blocking layer BIL1 may include, for example, a hole transport material and / or a metal or metal compound to prevent or block electrons generated by the first light-emitting layer EML1 from entering the first hole transport layer HTL1. In some embodiments, the first hole transport layer HTL1 and the first electron blocking layer BIL1 may be formed as a monolayer mixed with their respective materials.

[0131] The first electron transport layer ETL1 may be located on the first light-emitting layer EML1, and may be located between the first charge-generating layer CGL1 and the first light-emitting layer EML1. In some embodiments, the first electron transport layer ETL1 may include, for example, tri-(8-hydroxyquinoline)aluminum (Alq3), 1,3,5-tris(1-phenyl-1H-benzo)[d]imidazol-2-yl)phenyl (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ). Electron transport materials include 4-(naphthyl-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), beryllium bis(benzoquinoline-10-hydroxy) (Bebq2), 9,10-bis(naphthyl-2-yl)anthracene (ADN), or mixtures thereof. However, this disclosure is not limited to the type (e.g., species) of electron transport materials. The second stack ST2 may be located on the first charge-generating layer CGL1 and may further include a second hole transport layer HTL2, a second electron blocking layer BIL2, and a second electron transport layer ETL2.

[0132] The second hole transport layer HTL2 may be located on the first charge generation layer CGL1. The second hole transport layer HTL2 may be made of the same material as the first hole transport layer HTL1, or may include (for example) one or more materials selected from exemplary materials that may be included in the first hole transport layer HTL1. The second hole transport layer HTL2 may consist of a single layer or multiple layers.

[0133] The second electron blocking layer BIL2 may be located on the second hole transport layer HTL2 and between the second hole transport layer HTL2 and the second light-emitting layer EML2. The second electron blocking layer BIL2 may have the same material and structure as the first electron blocking layer BIL1, or may include (for example) one or more materials selected from exemplary materials that may be included in the first electron blocking layer BIL1.

[0134] The second electron transport layer ETL2 may be located on the second light-emitting layer EML2 and may be located between the second charge-generating layer CGL2 and the second light-emitting layer EML2. The second electron transport layer ETL2 may include (e.g.) the same material and structure as the first electron transport layer ETL1, or may include (e.g.) one or more materials selected from exemplary materials that may be included in the first electron transport layer ETL1. The second electron transport layer ETL2 may be composed of a single layer or multiple layers.

[0135] The second charge generation layer CGL2 can be located on the second stack ST2 and can be located between the second stack ST2 and the third stack ST3.

[0136] The second charge generation layer CGL2 may have the same structure as the first charge generation layer CGL1 described above. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 positioned closer to the second stack ST2 and a p-type charge generation layer CGL22 positioned closer to the cathode CE. The p-type charge generation layer CGL22 may be disposed on the n-type charge generation layer CGL21.

[0137] The second charge-generating layer CGL2 may have a structure in which the n-type charge-generating layer CGL21 and the p-type charge-generating layer CGL22 are in contact with each other (e.g., in physical or direct contact). The first charge-generating layer CGL1 and the second charge-generating layer CGL2 may be made of different materials or the same material.

[0138] The third stack ST3 may be located on the second charge generation layer CGL2 and may further include a third hole transport layer HTL3 and a third electron transport layer ETL3.

[0139] The third hole transport layer HTL3 may be located on the second charge generation layer CGL2. The third hole transport layer HTL3 may be made of the same material as the first hole transport layer HTL1, or may include (e.g.) one or more materials selected from exemplary materials that may be included in the first hole transport layer HTL1. The third hole transport layer HTL3 may consist of a single layer or multiple layers. When the third hole transport layer HTL3 is composed of multiple layers, these layers may include (e.g.) different materials.

[0140] The third electron transport layer ETL3 may be located on the third light-emitting layer EML3 and may be located between the cathode CE and the third light-emitting layer EML3. The third electron transport layer ETL3 may have the same material and structure as the first electron transport layer ETL1, or may include (e.g.) one or more materials selected from exemplary materials that may be included in the first electron transport layer ETL1. The third electron transport layer ETL3 may be composed of a single layer or multiple layers. When the third electron transport layer ETL3 is composed of multiple layers, these layers may include (e.g.) different materials.

[0141] The hole injection layer may be further located between the first stack ST1 and the first anode AE1, and the second anode AE2 (see...). Figure 7 ) and the third anode AE3 (see Figure 7 The hole injection layer can be located between the first stack ST1 and the first anode AE1, and / or between the second stack ST3 and the second charge generation layer CGL1, and / or between the third stack ST3 and the second charge generation layer CGL2. The hole injection layer facilitates the injection of holes into the first light-emitting layer EML1, the second light-emitting layer EML2, and the third light-emitting layer EML3. In some embodiments, the hole injection layer may be made of, but is not limited to, copper phthalocyanine (CuPc), poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), or N,N-dinaphthyl-N,N'-diphenylbenzidine (NPD). In some embodiments, the hole injection layer may be located between the first stack ST1 and the first anode AE1, and between the second anode AE2 (see [link to documentation]). Figure 7 ) and the third anode AE3 (see Figure 7 Between the second stack ST2 and the first charge generation layer CGL1, and / or between the third stack ST3 and the second charge generation layer CGL2.

[0142] The electron injection layer may be further located between the third electron transport layer ETL3 and the cathode CE, between the second charge generation layer CGL2 and the second stack ST2, and / or between the first charge generation layer CGL1 and the first stack ST1. The electron injection layer may facilitate electron injection and may utilize tris(8-hydroxyquinoline)aluminum (Alq3), PBD, TAZ, spiro-PBD, Balq, and / or SAlq, but this disclosure is not limited thereto. Additionally, the electron injection layer can be a metal halide and can be any one or more of, for example, MgF2 (magnesium fluoride), LiF (lithium fluoride), NaF (sodium fluoride), KF (potassium fluoride), RbF (rubidium fluoride), CsF (cesium fluoride), FrF (francium fluoride), LiI (lithium iodide), NaI (sodium iodide), KI (potassium iodide), RbI (rubidium iodide), CsI (cesium iodide), FrI (francium iodide), and / or CaF2 (calcium fluoride), but this disclosure is not limited thereto. In some embodiments, the electron injection layer may include, for example, lanthanum materials such as ytterbium (Yb), samarium (Sm), and / or europium (Eu). In some embodiments, the electron injection layer may include, for example, metal halide materials and lanthanum materials such as RbI:Yb and / or KI:Yb. When the electron injection layer comprises, for example, both a metal halide material and a lanthanum material, the electron injection layer may be formed by co-deposition of the metal halide material and the lanthanum material. In some embodiments, the electron injection layer may be located between the third electron transport layer ETL3 and the cathode CE, between the second charge generation layer CGL2 and the second stack ST2, and / or between the first charge generation layer CGL1 and the first stack ST1.

[0143] The structure of the luminescent layer OL can also be modified based on the above structure. For example, the luminescent layer OL can be modified as follows: Figure 9 The light-emitting layer OLa shown. In some embodiments, Figure 9 The light-emitting layer OLa shown may further include a fourth stack ST4 located between the third stack ST3 and the second stack ST2, and may further include a third charge-generating layer CGL3 located between the third stack ST3 and the second stack ST2. For example, the third charge-generating layer CGL3 may be located between the third stack ST3 and the fourth stack ST4.

[0144] The fourth stack ST4 may include a fourth light-emitting layer EML4 and may further include a fourth hole transport layer HTL4, a third electron blocking layer BIL4 and a fourth electron transport layer ETL4.

[0145] Each of the first emissive layer EML1, the second emissive layer EML2, the third emissive layer EML3, and the fourth emissive layer EML4 contained in the emissive layer OLa can emit light of a third color (e.g., blue light). At least one selected from the first emissive layer EML1, the second emissive layer EML2, the third emissive layer EML3, and the fourth emissive layer EML4, and at least another selected from the first emissive layer EML1, the second emissive layer EML2, the third emissive layer EML3, and the fourth emissive layer EML4, can emit blue light with a different peak wavelength range.

[0146] In some embodiments, at least one selected from the first emissive layer EML1, the second emissive layer EML2, the third emissive layer EML3, and the fourth emissive layer EML4 can emit green light, and at least another selected from the first emissive layer EML1, the second emissive layer EML2, the third emissive layer EML3, and the fourth emissive layer EML4 can emit blue light. For example, any one of the first emissive layer EML1, the second emissive layer EML2, the third emissive layer EML3, and the fourth emissive layer EML4 can be a green emissive layer, while the other three emissive layers can all be blue emissive layers.

[0147] The fourth hole transport layer HTL4 may be located on the second charge generation layer CGL2. The fourth hole transport layer HTL4 may be made of the same material as the first hole transport layer HTL1, or may include (e.g.) one or more materials selected from exemplary materials that may be included in the first hole transport layer HTL1. The fourth hole transport layer HTL4 may consist of a single layer or multiple layers. When the fourth hole transport layer HTL4 is composed of multiple layers, these layers may include (e.g.) different materials.

[0148] The third electron blocking layer BIL4 may be located on the fourth hole transport layer HTL4 and between the fourth hole transport layer HTL4 and the fourth light-emitting layer EML4. The third electron blocking layer BIL4 may include (e.g.) the same material and structure as the first electron blocking layer BIL1, or may include (e.g.) one or more materials selected from exemplary materials that may be included in the first electron blocking layer BIL1. In some embodiments, the third electron blocking layer BIL4 may be omitted.

[0149] The fourth electron transport layer ETL4 may be located on the fourth light-emitting layer EML4 and may be located between the third charge-generating layer CGL3 and the fourth light-emitting layer EML4. The fourth electron transport layer ETL4 may have the same material and structure as the first electron transport layer ETL1, or may include (e.g.) one or more materials selected from exemplary materials that may be included in the first electron transport layer ETL1. The fourth electron transport layer ETL4 may be composed of a single layer or multiple layers. When the fourth electron transport layer ETL4 is composed of multiple layers, these layers may include (e.g.) different materials.

[0150] The third charge generation layer CGL3 may have the same structure as the first charge generation layer CGL1 described above. For example, the third charge generation layer CGL3 may include an n-type charge generation layer CGL31 positioned closer to the fourth stack ST4 and a p-type charge generation layer CGL32 positioned closer to the cathode CE. The p-type charge generation layer CGL32 may be disposed on the n-type charge generation layer CGL31.

[0151] An electron injection layer may be further located between the fourth stack ST4 and the third charge generation layer CGL3. Additionally, a hole injection layer may be further located between the fourth stack ST4 and the second charge generation layer CGL2.

[0152] In some embodiments, Figure 8 The light-emitting layer OL shown in the figure Figure 9 The light-emitting layers OLa shown may not include a red light-emitting layer, and therefore may not emit light of the first color (e.g., red light). For example, in some embodiments, the output light LE does not include light components whose peak wavelength is in the range of about 610 nm to about 650 nm.

[0153] like Figure 7 As shown, the first capping layer 160 can be located on the cathode CE. The first capping layer 160 can be disposed in all the first luminescent regions LA1, the second luminescent region LA2, the third luminescent region LA3, and the non-luminescent region NLA. For example, the first capping layer 160 can be a common layer. The first capping layer 160 can improve viewing angle characteristics and increase external luminous efficiency.

[0154] In some embodiments, the first capping layer 160 may include, for example, an organic material. For example, the first capping layer 160 may include, for example, a triamine derivative, a carbazole biphenyl derivative, an aryldiamine derivative, and / or tris(8-hydroxyquinoline)aluminum (Alq3).

[0155] like Figure 7As shown, a thin-film encapsulation layer 170 is disposed on the first capping layer 160. The thin-film encapsulation layer 170 is disposed on all the first light-emitting regions LA1, the second light-emitting region LA2, the third light-emitting region LA3, and the non-light-emitting region NLA. In some embodiments, the thin-film encapsulation layer 170 may directly cover the first capping layer 160. For example, the thin-film encapsulation layer 170 may be directly on the first capping layer 160.

[0156] In some embodiments, the thin-film encapsulation layer 170 may include a first lower inorganic layer 171, a first organic layer 173, and a first upper inorganic layer 175 sequentially stacked on the first capping layer 160.

[0157] The first lower inorganic layer 171 can cover the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 in the display area DA.

[0158] The first lower inorganic layer 171 may include (e.g.) an inorganic material and has a multilayer structure. In some embodiments, such as Figure 10 As shown, the first lower inorganic layer 171 may include a first sub-inorganic layer 1711 and a second sub-inorganic layer 1713. Additionally, the first lower inorganic layer 171 may further include a third sub-inorganic layer 1715.

[0159] The first sub-inorganic layer 1711 may be located on the first capping layer 160. The first sub-inorganic layer 1711 may prevent damage to the first capping layer 160 during the process of forming the second sub-inorganic layer 1713, or the first sub-inorganic layer 1711 may reduce such damage to the first capping layer 160. For example, the first sub-inorganic layer 1711 may serve as a protective layer for protecting the first capping layer 160. In some embodiments, the compressive stress of the first sub-inorganic layer 1711 may be from 0 MPa to 200 MPa.

[0160] The second sub-inorganic layer 1713 may be located on the first sub-inorganic layer 1711. The second sub-inorganic layer 1713 can prevent or block moisture and / or oxygen from penetrating into the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3. For example, the second sub-inorganic layer 1713 can be used as a barrier layer to prevent or block the penetration of external moisture and / or oxygen. In some embodiments, the compressive stress of the second sub-inorganic layer 1713 can be from 0 MPa to 200 MPa.

[0161] The third sub-inorganic layer 1715 may be located on the second sub-inorganic layer 1713. The upper surface of the third sub-inorganic layer 1715 may directly contact the first organic layer 173. In some embodiments, a non-uniform structure SR1 may be provided on the upper surface of the third sub-inorganic layer 1715 that is in direct contact with the first organic layer 173. Because the non-uniform structure SR1 is provided on the upper surface of the third sub-inorganic layer 1715, the upper surface of the third sub-inorganic layer 1715 may have a relatively larger surface roughness than the upper surface of the first sub-inorganic layer 1711 that is in contact with the second sub-inorganic layer 1713 or the upper surface of the second sub-inorganic layer 1713 that is in contact with the third sub-inorganic layer 1715.

[0162] In some embodiments, the uneven structure SR1 can be formed as any irregular pattern and / or irregular uneven shape. Because the uneven structure SR1 is provided on the upper surface of the third sub-inorganic layer 1715, the spreadability of the organic material during the formation of the first organic layer 173 is improved, and the organic material can be spread relatively uniformly on the third sub-inorganic layer 1715. Furthermore, because the uneven structure SR1 increases the contact area between the third sub-inorganic layer 1715 and the first organic layer 173, membrane separation can be prevented or reduced, and the first organic layer 173 can be more firmly coupled (e.g., attached) to the first lower inorganic layer 171.

[0163] In some embodiments, the surface roughness of the uneven structure SR1 can be from 5 nm to 100 nm, depending on the root mean square roughness Rq. When the surface roughness Rq of the uneven structure SR1 is from 5 nm to 100 nm, the adhesion between the first organic layer 173 and the first lower inorganic layer 171, as well as the spreadability of the organic material, can be improved.

[0164] Furthermore, when the output light LE emitted from the light-emitting element ED passes through the thin-film encapsulation layer 170, internal reflection at the rough interface between the first organic layer 173 and the third sub-inorganic layer 1715 is reduced, thereby improving light extraction efficiency. Additionally, when external light is incident on the thin-film encapsulation layer 170, it can be refracted at the rough interface between the first organic layer 173 and the third sub-inorganic layer 1715, thereby suppressing external light reflection. Improved light extraction efficiency translates to improved screen brightness, and the suppression of external light reflection leads to improved screen contrast.

[0165] In some embodiments, due to the aforementioned uneven structure SR1, the upper surface of the third sub-inorganic layer 1715 may have a surface energy of 40 mN / m to 80 mN / m.

[0166] In some embodiments, the thickness Th13 of the second sub-inorganic layer 1713 may be greater than the thickness Th11 of the first sub-inorganic layer 1711 and greater than the thickness Th15 of the third sub-inorganic layer 1715.

[0167] In some embodiments, the thickness Th13 of the second sub-inorganic layer 1713 can be arrive Additionally, in some embodiments, the thickness Th11 of the first sub-inorganic layer 1711 may have a certain value. arrive The value of Th13 is smaller than the thickness of the second sub-inorganic layer 1713 within the range. Additionally, in some embodiments, the thickness Th15 of the third sub-inorganic layer 1715 may have a value within... arrive The thickness Th13 of the third sub-inorganic layer 1715, which includes the non-flat structure SR1, is within the range of values ​​smaller than that of the second sub-inorganic layer 1713, and the non-flat structure SR1 can be realized. Here, the thickness Th15 of the third sub-inorganic layer 1715, which includes the non-flat structure SR1, can represent the average thickness.

[0168] In some embodiments, the refractive index n13 of the second sub-inorganic layer 1713 may be greater than the refractive index n11 of the first sub-inorganic layer 1711. Additionally, in some embodiments, the refractive index n13 of the second sub-inorganic layer 1713 may be greater than the refractive index n15 of the third sub-inorganic layer 1715. From a material viewpoint, refractive index is one of the physical elements used to indicate material density. In some embodiments, the refractive index n13 of the second sub-inorganic layer 1713 may be greater than the refractive index n11 of the first sub-inorganic layer 1711 and greater than the refractive index n15 of the third sub-inorganic layer 1715. Therefore, the second sub-inorganic layer 1713 can be used as a barrier layer.

[0169] In some embodiments, each of the refractive index n11 of the first sub-inorganic layer 1711, the refractive index n13 of the second sub-inorganic layer 1713, and the refractive index n15 of the third sub-inorganic layer 1715 may be 1.7 or less.

[0170] like Figure 11 As shown, the extinction coefficient (k) increases with increasing refractive index and decreases with decreasing refractive index. Furthermore, when the refractive index is 1.7, as shown in the figure, the extinction coefficient converges to essentially zero for light with wavelengths from approximately 370 nm to approximately 800 nm. The decrease in the extinction coefficient indicates a reduction in light loss due to light absorption, which in turn indicates an increase in optical efficiency. When the refractive index n11 of the first sub-inorganic layer 1711, the refractive index n13 of the second sub-inorganic layer 1713, and the refractive index n15 of the third sub-inorganic layer 1715 are all 1.7 or less, light loss due to light absorption by the first lower inorganic layer 171 can be prevented or reduced. Therefore, optical efficiency can be improved.

[0171] In some embodiments, the refractive index n13 of the second sub-inorganic layer 1713 may be 1.5 to 1.7. Additionally, in some embodiments, the refractive index n11 of the first sub-inorganic layer 1711 may be 1.3 to less than 1.7 (e.g., equal to or greater than 1.3 and less than 1.7), as long as it is less than the refractive index n13 of the second sub-inorganic layer 1713. Furthermore, in some embodiments, the refractive index n15 of the third sub-inorganic layer 1715 may be 1.3 to less than 1.7 (e.g., equal to or greater than 1.3 and less than 1.7), as long as it is less than the refractive index n13 of the second sub-inorganic layer 1713.

[0172] In some embodiments, each of the first sub-inorganic layer 1711, the second sub-inorganic layer 1713, and the third sub-inorganic layer 1715 may be made of an inorganic material and may be made of oxides and / or oxynitrides. For example, the first sub-inorganic layer 1711, the second sub-inorganic layer 1713, and the third sub-inorganic layer 1715 may be made of silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, tungsten oxide, tungsten oxynitride, titanium oxide, and / or titanium oxynitride.

[0173] In some embodiments, the first sub-inorganic layer 1711, the second sub-inorganic layer 1713, and the third sub-inorganic layer 1715 may all be made of an oxide or a nitride of the same first material. The first material may be at least one selected from silicon (Si), aluminum (Al), tungsten (W), and titanium (Ti). For example, the first sub-inorganic layer 1711, the second sub-inorganic layer 1713, and the third sub-inorganic layer 1715 may all be made of silicon oxide (SiO2). x ) or silicon oxynitride (SiO) x N y Made from ).

[0174] In some embodiments, the second sub-inorganic layer 1713 may be made of a nitrogen oxide of the first material, and the first sub-inorganic layer 1711 and the third sub-inorganic layer 1715 may be made of an oxide of the first material or a nitrogen oxide of the first material. Furthermore, the oxygen atom content (e.g., concentration, %) in the second sub-inorganic layer 1713 may be less than the oxygen atom content in the first sub-inorganic layer 1711 and less than the oxygen atom content in the third sub-inorganic layer 1715. Additionally, the nitrogen atom content in the second sub-inorganic layer 1713 may be greater than the nitrogen atom content in the first sub-inorganic layer 1711 and greater than the nitrogen atom content in the third sub-inorganic layer 1715.

[0175] In the case of oxides or oxynitrides of the same material, the refractive index decreases with increasing oxygen content, while the refractive index and barrier properties increase with decreasing oxygen content and / or increasing nitrogen content. Therefore, the second sub-inorganic layer 1713, having better barrier properties than each of the first sub-inorganic layer 1711 and the third sub-inorganic layer 1715, can have a relatively low oxygen content and a relatively high nitrogen content.

[0176] In some embodiments, the first sub-inorganic layer 1711 and the third sub-inorganic layer 1715 may be made of silicon oxide, and the second sub-inorganic layer 1713 may be made of silicon oxynitride.

[0177] In some embodiments, the first sub-inorganic layer 1711 and the second sub-inorganic layer 1713 may be made of silicon oxynitride, and the third sub-inorganic layer 1715 may be made of silicon oxide. Additionally, the second sub-inorganic layer 1713 may have a relatively lower oxygen atom content than the first sub-inorganic layer 1711, and may have a relatively higher nitrogen atom content than the first sub-inorganic layer 1711.

[0178] In some embodiments, the first sub-inorganic layer 1711, the second sub-inorganic layer 1713, and the third sub-inorganic layer 1715 can all be made of silicon oxynitride. Additionally, the second sub-inorganic layer 1713 may have a relatively lower oxygen atom content than each of the first sub-inorganic layer 1711 and the third sub-inorganic layer 1715, and may have a relatively higher nitrogen atom content than the first sub-inorganic layer 1711 and the third sub-inorganic layer 1715.

[0179] like Figure 7 and Figure 10 As shown, the first organic layer 173 may be located on the first lower inorganic layer 171. The first organic layer 173 may cover the first light-emitting element ED1, the second light-emitting element ED2, and the third light-emitting element ED3 in the display area DA.

[0180] In some embodiments, the first organic layer 173 may be made of acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, polyurethane resin, cellulose resin and / or perylene resin.

[0181] In some embodiments, the thickness Th3 of the first organic layer 173 can be from about 2 μm to about 8 μm.

[0182] The first upper inorganic layer 175 may be located on the first organic layer 173. The first upper inorganic layer 175 may cover the first organic layer 173. In some embodiments, the first upper inorganic layer 175 may be in direct contact with the first lower inorganic layer 171 in the non-display area NDA to form an inorganic-inorganic bond.

[0183] In some embodiments, the first upper inorganic layer 175 may be made of an inorganic material and may be made of oxides and / or oxynitrides. For example, the first upper inorganic layer 175 may be made of silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, tungsten oxide, tungsten oxynitride, titanium oxide and / or titanium oxynitride.

[0184] In some embodiments, the refractive index of the first upper inorganic layer 175 may be 1.7 or less, and the thickness Th5 of the first upper inorganic layer 175 may be [missing information]. to

[0185] Because the inorganic layer contained in the thin-film encapsulation layer 170 has a refractive index of 1.7 or less, the extinction coefficient can converge to essentially zero. Therefore, light loss in the inorganic layer contained in the thin-film encapsulation layer 170 can be prevented or reduced, and light efficiency can be improved.

[0186] The structure of the thin film encapsulation layer 170 can be modified in various ways and appropriately based on the above structure.

[0187] Figure 12 yes Figure 10 A cross-sectional view of a deformation example. Figure 13 yes Figure 10 A cross-sectional view of a deformation example. Figure 14 yes Figure 10 A cross-sectional view of a deformation example.

[0188] refer to Figure 12 The thin film encapsulation layer 170 (see...) Figure 10 ) modified to Figure 12 The thin-film encapsulation layer 170_1 shown is included. The thin-film encapsulation layer 170_1 may include a first lower inorganic layer 171, a first organic layer 173, and a first upper inorganic layer 175a.

[0189] The first upper inorganic layer 175a of the thin film encapsulation layer 170_1 may include a fourth sub-inorganic layer 1751 and a fifth sub-inorganic layer 1753.

[0190] The fourth inorganic layer 1751 can be located on the first organic layer 173 and can block or reduce the exhaust gas generated in the first organic layer 173.

[0191] The fifth inorganic layer 1753 may be located on the fourth inorganic layer 1751 and may be used as a barrier layer to prevent or block the penetration of external moisture and / or oxygen.

[0192] In some embodiments, the thickness Th53 of the fifth sub-inorganic layer 1753 may be greater than the thickness Th51 of the fourth sub-inorganic layer 1751.

[0193] In some embodiments, the thickness Th53 of the fifth sub-inorganic layer 1753 can be arrive Additionally, in some embodiments, the thickness Th51 of the fourth sub-inorganic layer 1751 can be... arrive As long as it is less than the thickness Th53 of the fifth inorganic layer 1753.

[0194] In some embodiments, the refractive index n53 of the fifth sub-inorganic layer 1753 may be greater than the refractive index n51 of the fourth sub-inorganic layer 1751.

[0195] In some embodiments, each of the refractive index n53 of the fifth sub-inorganic layer 1753 and the refractive index n51 of the fourth sub-inorganic layer 1751 may be 1.7 or less. In some embodiments, the refractive index n53 of the fifth sub-inorganic layer 1753 may be from 1.5 to 1.7, and the refractive index n51 of the fourth sub-inorganic layer 1751 may be from 1.3 to less than 1.7 (e.g., equal to or greater than 1.3 and less than 1.7), as long as it is less than the refractive index n53 of the fifth sub-inorganic layer 1753.

[0196] In some embodiments, each of the fourth sub-inorganic layer 1751 and the fifth sub-inorganic layer 1753 may be made of an inorganic material and may be made of oxides and / or oxynitrides. For example, the fourth sub-inorganic layer 1751 and the fifth sub-inorganic layer 1753 may be made of silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, tungsten oxide, tungsten oxynitride, titanium oxide and / or titanium oxynitride.

[0197] In some embodiments, the fourth sub-inorganic layer 1751 and the fifth sub-inorganic layer 1753 may be entirely made of an oxide or an oxynitride of the same second material. The second material may include, for example, silicon (Si), aluminum (Al), tungsten (W), and / or titanium (Ti). For example, the fourth sub-inorganic layer 1751 and the fifth sub-inorganic layer 1753 may be entirely made of silicon oxide or silicon oxynitride.

[0198] In some embodiments, the fifth sub-inorganic layer 1753 may be made of a nitrogen oxide of the second material, and the fourth sub-inorganic layer 1751 may be made of an oxide or a nitrogen oxide of the second material. Additionally, the oxygen atom content in the fifth sub-inorganic layer 1753 may be less than the oxygen atom content in the fourth sub-inorganic layer 1751. Furthermore, the nitrogen atom content in the fifth sub-inorganic layer 1753 may be greater than the nitrogen atom content in the fourth sub-inorganic layer 1751. Additionally, in some embodiments, the nitrogen atom content in the fifth sub-inorganic layer 1753 may be greater than the nitrogen atom content in the third sub-inorganic layer 1715.

[0199] In some embodiments, the fourth sub-inorganic layer 1751 may be made of silicon oxide, and the fifth sub-inorganic layer 1753 may be made of silicon oxynitride.

[0200] In some embodiments, each of the fourth sub-inorganic layer 1751 and the fifth sub-inorganic layer 1753 may be made of silicon oxynitride, and the fifth sub-inorganic layer 1753 may have a relatively lower oxygen atom content than the fourth sub-inorganic layer 1751 and may have a relatively higher nitrogen atom content than the fourth sub-inorganic layer 1751.

[0201] refer to Figure 13 The thin film encapsulation layer 170 (see...) Figure 10 ) modified to Figure 13 The thin-film encapsulation layer 170_2 shown herein may include a first lower inorganic layer 171, a first organic layer 173, and a first upper inorganic layer 175b.

[0202] The first upper inorganic layer 175b may include a fifth sub-inorganic layer 1753 and a sixth sub-inorganic layer 1755.

[0203] Fifth inorganic layer 1753 and above reference Figure 12 The descriptions are the same or similar, and therefore a detailed description of them may not be provided.

[0204] The sixth sub-inorganic layer 1755 can be located on the fifth sub-inorganic layer 1753.

[0205] The upper surface of the sixth sub-inorganic layer 1755 can directly contact the filler 70. In some embodiments, an uneven structure SR2 can be provided on the upper surface of the sixth sub-inorganic layer 1755 that directly contacts the filler 70. Because an uneven structure SR2 is provided on the upper surface of the sixth sub-inorganic layer 1755, the upper surface of the sixth sub-inorganic layer 1755 can have a relatively larger surface roughness than the upper surface of the fifth sub-inorganic layer 1753 that contacts the sixth sub-inorganic layer 1755.

[0206] In some embodiments, the uneven structure SR2 can be formed as any irregular pattern and / or irregular uneven shape. Because the uneven structure SR2 is provided on the upper surface of the sixth sub-inorganic layer 1755, the spreadability of the organic material used to form the filler 70 during the forming process is improved, and the organic material can be spread relatively uniformly on the sixth sub-inorganic layer 1755. Furthermore, because the uneven structure SR2 increases the contact area between the sixth sub-inorganic layer 1755 and the filler 70, the filler 70 and the sixth sub-inorganic layer 1755 can be more firmly coupled (e.g., adhered) to each other.

[0207] In some embodiments, the surface roughness of the uneven structure SR2 provided on the upper surface of the sixth sub-inorganic layer 1755 can be from 5 nm to 100 nm, depending on the root mean square roughness Rq. When the surface roughness Rq of the uneven structure SR2 is from 5 nm to 100 nm, the adhesion between the filler 70 and the sixth sub-inorganic layer 1755 and the spreadability of the organic material can be improved.

[0208] Furthermore, the uneven SR2 structure improves light extraction efficiency by reducing internal light reflection and suppressing external light reflection through external light refraction. Light extraction efficiency translates to improved screen brightness, and the suppression of external light reflection leads to improved screen contrast.

[0209] In some embodiments, due to the aforementioned uneven structure SR2, the upper surface of the sixth sub-inorganic layer 1755 may have a surface energy of 40 mN / m to 80 mN / m.

[0210] In some embodiments, the thickness Th55 of the sixth sub-inorganic layer 1755 may be less than the thickness Th53 of the fifth sub-inorganic layer 1753. For example, the thickness Th55 of the sixth sub-inorganic layer 1755 may be... to As long as it is less than the thickness Th53 of the fifth inorganic layer 1753.

[0211] In some embodiments, the refractive index n55 of the sixth sub-inorganic layer 1755 may be 1.7 or less and may be less than the refractive index n53 of the fifth sub-inorganic layer 1753. For example, the refractive index n55 of the sixth sub-inorganic layer 1755 may be 1.3 to less than 1.7 (e.g., equal to or greater than 1.3 and less than 1.7), as long as it is less than the refractive index n53 of the fifth sub-inorganic layer 1753.

[0212] The sixth inorganic layer 1755 can be made of inorganic materials and can be made of oxides and / or nitrogen oxides. For example, as shown in... Figure 12 As described, the sixth sub-inorganic layer 1755 may include (e.g.) be included in the fourth sub-inorganic layer 1751 (see [link to documentation]). Figure 12 ) and / or any one or more exemplary materials in the fifth sub-inorganic layer 1753.

[0213] In some embodiments, when the fifth sub-inorganic layer 1753 is made of oxynitride of the second material, the sixth sub-inorganic layer 1755 may be made of oxide of the second material or oxynitride of the second material. When the sixth sub-inorganic layer 1755 is made of oxynitride of the second material, it may have a relatively higher oxygen atom content and a relatively lower nitrogen atom content than the fifth sub-inorganic layer 1753. For example, both the sixth sub-inorganic layer 1755 and the fifth sub-inorganic layer 1753 may be made of silicon oxynitride, and the sixth sub-inorganic layer 1755 may include relatively more oxygen atoms (e.g., relatively more oxygen atoms per atom) and relatively fewer nitrogen atoms (e.g., relatively fewer nitrogen atoms per atom) than the fifth sub-inorganic layer 1753.

[0214] refer to Figure 14 The thin film encapsulation layer 170 (see...) Figure 10 ) modified to Figure 14 The thin-film encapsulation layer 170_3 shown is included. The thin-film encapsulation layer 170_3 may include a first lower inorganic layer 171, a first organic layer 173, and a first upper inorganic layer 175c.

[0215] like Figure 14 As shown, the first upper inorganic layer 175c may further include a fourth sub-inorganic layer 1751 located between the first organic layer 173 and the fifth sub-inorganic layer 1753. The fourth sub-inorganic layer 1751, the fifth sub-inorganic layer 1753 and the sixth sub-inorganic layer 1755 are the same as or similar to those described above, and therefore a more detailed description thereof is not required.

[0216] Besides reference Figure 7 In addition, we will now also refer to Figures 15 to 19 To describe the color conversion base 30.

[0217] Figure 15 This is a plan view showing a schematic arrangement of the third color filter 235 and the color pattern 250 in the color conversion substrate 30 of the display device 1 according to an embodiment. Figure 16 This is a plan view showing a schematic arrangement of the light-blocking pattern 260 in the color conversion substrate 30 of the display device 1 according to an embodiment. Figure 17 This is a plan view showing a schematic arrangement of the first color filter 231 in the color conversion substrate 30 of the display device 1 according to an embodiment. Figure 18 This is a plan view showing a schematic arrangement of the second color filter 233 in the color conversion substrate 30 of the display device 1 according to an embodiment. Figure 19This is a plan view showing a schematic arrangement of the embankment pattern 370, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 in the color conversion substrate 30 of the display device 1 according to an embodiment.

[0218] refer to Figure 7 and Figures 15 to 19 ,exist Figure 7 The second substrate 310 shown can be made of a light-transmitting material.

[0219] In some embodiments, the second substrate 310 may include a glass substrate and / or a plastic substrate. In some embodiments, the second substrate 310 may further include a separate layer (e.g., an insulating layer such as an inorganic layer) located on the glass substrate or the plastic substrate.

[0220] In some embodiments, the light-transmitting regions TA1 to TA3 and the light-blocking region BA may be defined in the second substrate 310 as described above.

[0221] like Figure 7 As shown, the third color filter 235 and the color pattern 250 can be located on the surface (e.g., the bottom surface) of the second substrate 310 facing the display substrate 10.

[0222] The third color filter 235 may overlap with the third luminescent region LA3 and / or the third transmissive region TA3.

[0223] The third color filter 235 may allow only light of a third color (e.g., blue light) to pass through and block and / or absorb light of a first color (e.g., red light) and a second color (e.g., green light). In some embodiments, the third color filter 235 may be a blue color filter and may include (e.g.,) a blue colorant such as a blue dye and / or a blue pigment. As used herein, the term "colorant" is a concept that encompasses both dyes and pigments.

[0224] Color pattern 250 can overlap with the non-luminescent area NLA and / or the light-blocking area BA.

[0225] Color pattern 250 can absorb a portion of the light introduced into display device 1 from the outside, thereby reducing reflected light due to external light. A considerable portion of the external light is reflected, which causes color gamut distortion of display device 1. However, according to the present embodiment, when color pattern 250 is located in the non-light-emitting area NLA and the non-display area NDA, color distortion due to reflection of external light can be reduced.

[0226] In some embodiments, color pattern 250 may include, for example, a blue colorant such as a blue dye and / or blue pigment. In some embodiments, color pattern 250 may be made of the same material as the third color filter 235 and may be formed simultaneously with the third color filter 235. When color pattern 250 includes, for example, a blue colorant, external light transmitted through or reflected through color pattern 250 may be blue light. The color sensitivity of a user's eye varies depending on the color of light. For example, a user may be less sensitive to blue wavelengths than to green and red wavelengths. Therefore, because color pattern 250 includes, for example, a blue colorant, a user may be relatively less sensitive to reflected light.

[0227] In some embodiments, such as Figure 15 As shown, the color pattern 250 is disposed over the entire light-blocking area BA. Additionally, in some embodiments, such as... Figure 15 As shown, color pattern 250 and third color filter 235 can be coupled to each other (e.g., connected).

[0228] like Figure 7 and Figure 16 As shown, the light-blocking pattern 260 can be located on the surface (e.g., the bottom surface) of the second substrate 310 facing the display substrate 10. The light-blocking pattern 260 can overlap with the light-blocking region BA to block light transmission. In some embodiments, such as Figure 16 As shown, the light-blocking pattern 260 can be set to a roughly grid shape in the plan view.

[0229] In some embodiments, the light-blocking pattern 260 may include, for example, an organic light-blocking material and may be formed by coating the organic light-blocking material and exposing it to light.

[0230] As described above, external light can cause color gamut distortion in the display device 1. However, according to the current embodiment, when the light-blocking pattern 260 is located on the second substrate 310, at least a portion of the external light is absorbed by the light-blocking pattern 260. Therefore, color distortion due to reflection of external light can be reduced. In some embodiments, the light-blocking pattern 260 can prevent or reduce color mixing due to light intrusion between adjacent light-transmitting areas, thereby further improving the color gamut.

[0231] In some embodiments, the light-blocking pattern 260 may be located on the color pattern 250. For example, the light-blocking pattern 260 may be opposite the second substrate 310, with the color pattern 250 situated between them. For example, the light-blocking pattern 260 may be on the lower surface of the color pattern 250.

[0232] Because the color pattern 250 is located between the light-blocking pattern 260 and the second substrate 310, in some embodiments the light-blocking pattern 260 may not contact the second substrate 310.

[0233] The first color filter 231 and the second color filter 233 may be located on the surface (e.g., the bottom surface) of the second substrate 310 facing the display substrate 10.

[0234] The first color filter 231 may overlap with the first light-emitting region LA1 and / or the first light-transmitting region TA1, and the second color filter 233 may overlap with the second light-emitting region LA2 and / or the second light-transmitting region TA2.

[0235] In some embodiments, the first color filter 231 may block and / or absorb a third color of light (e.g., blue light). For example, the first color filter 231 may function as a blue light blocking filter that blocks blue light. In some embodiments, the first color filter 231 may allow only a first color of light (e.g., red light) to pass through and block and / or absorb a third color of light (e.g., blue light) and a second color of light (e.g., green light). For example, the first color filter 231 may be a red color filter and may include (e.g., a red colorant).

[0236] The second color filter 233 can block and / or absorb light of a third color (e.g., blue light). For example, the second color filter 233 can also be used as a blue light blocking filter. In some embodiments, the second color filter 233 can allow only light of a second color (e.g., green light) to pass through and block and / or absorb light of a third color (e.g., blue light) and light of a first color (e.g., red light). For example, the second color filter 233 can be a green color filter and can include (e.g., a green colorant).

[0237] In some embodiments, such as Figure 7 and Figure 17 As shown, a portion of the first color filter 231 may be further located within the light-blocking region BA, and as... Figure 7 and Figure 18 As shown, a portion of the second color filter 233 may be further located within the light-blocking region BA. For example, each of the first color filter 231 and the second color filter 233 may cover a portion (e.g., an edge) of the bottom surface of the light-blocking pattern 260.

[0238] In some embodiments, a portion of the first color filter 231 may be further located in the blocking region BA between the first light-transmitting region TA1 and the second light-transmitting region TA2 and between the first light-transmitting region TA1 and the third light-transmitting region TA3.

[0239] In some embodiments, a portion of the second color filter 233 may be further located in the light-blocking region BA between the first light-transmitting region TA1 and the second light-transmitting region TA2 and between the second light-transmitting region TA2 and the third light-transmitting region TA3.

[0240] Although the first color filter 231 and the second color filter 233 do not overlap in the figure, in some embodiments, they may overlap in the light-blocking region BA between the first light-transmitting region TA1 and the second light-transmitting region TA2. The overlapping portion of the first color filter 231 and the second color filter 233 in the light-blocking region BA can be used as a light-blocking component to block light transmission.

[0241] In some embodiments, the first color filter 231 and the second color filter 233 may be located above the entire light-blocking region BA and may overlap each other in the entire light-blocking region BA.

[0242] In some embodiments, the first color filter 231 and the second color filter 233 may overlap with the color pattern 250 in the light-blocking region BA. For example, the color pattern 250 may overlap with the first color filter 231 and the second color filter 233 in the light-blocking region BA between the first light-transmitting region TA1 and the second light-transmitting region TA2. Alternatively, the color pattern 250 may overlap with the second color filter 233 in the light-blocking region BA between the second light-transmitting region TA2 and the third light-transmitting region TA3. Furthermore, the color pattern 250 may overlap with the first color filter 231 in the light-blocking region BA between the third light-transmitting region TA3 and the first light-transmitting region TA1.

[0243] In the light-blocking region BA, the overlapping portions of the first color filter 231 and the color pattern 250, as well as the overlapping portions of the second color filter 233 and the color pattern 250, can serve as light-blocking components. In the light-blocking region BA, the overlapping portions of the first color filter 231 and the color pattern 250, as well as the overlapping portions of the second color filter 233 and the color pattern 250, can absorb at least a portion of external light, thereby reducing color distortion caused by the reflection of external light. Furthermore, it can prevent or block light emitted to the outside from intruding between adjacent light-emitting areas and causing color mixing. Therefore, the color gamut of the display device 1 can be improved.

[0244] like Figure 7 As shown, the second capping layer 391 may be located on the surface (e.g., the bottom surface) of the second substrate 310 to cover the light-blocking pattern 260, the color pattern 250, the first color filter 231, the second color filter 233, and the third color filter 235. In some embodiments, the second capping layer 391 may directly contact the first color filter 231, the second color filter 233, and the third color filter 235. Additionally, in some embodiments, the second capping layer 391 may directly contact the light-blocking pattern 260.

[0245] The second cover layer 391 can prevent or block impurities such as moisture and / or air from being introduced from the outside (e.g., from a portion of the display device 1 below the second cover layer 391) and damaging and / or contaminating the light-blocking pattern 260, color pattern 250, first color filter 231, second color filter 233, and third color filter 235. Additionally, the second cover layer 391 can prevent or block the diffusion of colorants contained in the first color filter 231, second color filter 233, and third color filter 235 to other elements (e.g., elements of the display device 1 below the second cover layer 391) such as the first wavelength conversion pattern 340 and second wavelength conversion pattern 350. In some embodiments, the second cover layer 391 can be made of inorganic materials. For example, the second cover layer 391 may include (e.g.) silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and / or silicon oxynitride.

[0246] The dam pattern 370 may be located on the surface (e.g., the bottom surface) of the second cover layer 391 facing the display substrate 10. In some embodiments, the dam pattern 370 may be located directly on the surface of the second cover layer 391 and may be in direct contact with the second cover layer 391.

[0247] In some embodiments, the embankment pattern 370 may overlap with the non-light-emitting region NLA and / or the light-blocking region BA. In some embodiments, for example, such as Figure 19 As shown, the embankment pattern 370 may surround (e.g., encircle) the first light-transmitting region TA1, the second light-transmitting region TA2, and / or the third light-transmitting region TA3 in the plan view. The embankment pattern 370 may separate the space in which the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and / or the light-transmitting pattern 330 are disposed.

[0248] In some embodiments, such as Figure 19 As shown, the dam pattern 370 can be formed as an integrally coupled (e.g., connected) pattern, but this disclosure is not limited thereto. In embodiments, a portion of the dam pattern 370 around (e.g., surrounding) the first light-transmitting region TA1, a portion of the dam pattern 370 around (e.g., surrounding) the second light-transmitting region TA2, and a portion of the dam pattern 370 around (e.g., surrounding) the third light-transmitting region TA3 can be formed as separate patterns that are isolated from each other (e.g., separated from each other and / or not integrally coupled (e.g., connected)).

[0249] When the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 are formed by a method of ejecting an ink composition using a nozzle (e.g., an inkjet printing method), the dam pattern 370 can be used as a guide to stably position the ejected ink composition at a set or desired location. For example, the dam pattern 370 can be used as a barrier wall.

[0250] In some embodiments, the embankment pattern 370 may overlap with the pixel defining layer 150.

[0251] In some embodiments, the dam pattern 370 may include, for example, a photocurable organic material. Additionally, in some embodiments, the dam pattern 370 may include, for example, a photocurable organic material that also includes, for example, a light-blocking material. When the dam pattern 370 has light-blocking properties, it can prevent or block light from entering between adjacent (e.g., neighboring) light-emitting areas in the display area DA. For example, the dam pattern 370 can block the output light LE emitted from the second light-emitting element ED2 from entering the first wavelength conversion pattern 340 overlapping with the first light-emitting area LA1. Furthermore, the dam pattern 370 can block or prevent external light (e.g., light from outside the display device 1) from entering elements located below the dam pattern 370 in the non-light-emitting area NLA.

[0252] The first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 may be located on the second cover layer 391 (e.g., on its bottom surface). In some embodiments, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 may be located in the display area DA.

[0253] The light-transmitting pattern 330 may overlap with the third light-emitting region LA3 and / or the third light-emitting element ED3. The light-transmitting pattern 330 may be located in the space defined by the embankment pattern 370 in the third light-transmitting region TA3. For example, the light-transmitting pattern 330 may be located in the opening of the embankment pattern 370 that overlaps with the third light-transmitting region TA3.

[0254] In some embodiments, the light-transmitting pattern 330 can be formed as follows: Figure 19 The island-shaped pattern shown is illustrated. For example, in a plan view, the light-transmitting pattern 330 may be completely surrounded by the dike-shaped pattern 370. Although the light-transmitting pattern 330 does not overlap with the light-blocking region BA in the figure, this is merely an example. In some embodiments, a portion of the light-transmitting pattern 330 may overlap with the light-blocking region BA.

[0255] The light-transmitting pattern 330 allows incident light to pass through. As described above, the output light LE provided by the third light-emitting element ED3 can be blue light. That is, the blue output light LE is transmitted through the light-transmitting pattern 330 and the third color filter 235 and then emitted to the outside of the display device 1. For example, the third light L3 emitted from the display device 1 through the third light-emitting area LA3 can be blue light.

[0256] In some embodiments, the light-transmitting pattern 330 may include a first matrix resin 331 and may further include a first scatterer 333 dispersed in the first matrix resin 331.

[0257] The first matrix resin 331 may be made of a material with high light transmittance. In some embodiments, the first matrix resin 331 may be made of an organic material. For example, the first matrix resin 331 may include (e.g.) organic materials such as epoxy resin, acrylic resin, calorie resin and / or imide resin.

[0258] The first scatterer 333 may have a different refractive index than the first matrix resin 331 and may form an optical interface with the first matrix resin 331. For example, the first scatterer 333 may be a light-scattering particle. The first scatterer 333 is not particularly limited, as long as it is a material capable of scattering at least a portion of the transmitted light (e.g., at least a portion of the output light LE entering the light-transmitting pattern 330). For example, the first scatterer 333 may be metal oxide particles and / or organic particles. Metal oxides may be, for example, titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), and / or tin oxide (SnO2). Organic particles may be, for example, acrylic resin and / or polyurethane resin. The first scatterer 333 may scatter incident light randomly or in various directions, regardless of the incident direction of the incident light, without substantially changing the wavelength of the light transmitted through the light-transmitting pattern 330.

[0259] In some embodiments, the light-transmitting pattern 330 may directly contact the second capping layer 391 and / or the embankment pattern 370.

[0260] The first wavelength conversion pattern 340 may be located on the second capping layer 391 (e.g., on the bottom surface of the second capping layer 391) and may overlap with the first light-emitting region LA1, the first light-emitting element ED1 and / or the first light-transmitting region TA1.

[0261] In some embodiments, the first wavelength conversion pattern 340 may be located in the space defined by the embankment pattern 370 in the first light-transmitting region TA1. For example, the first wavelength conversion pattern 340 may be in an opening of the embankment pattern 370.

[0262] In some embodiments, such as Figure 19 As shown, the first wavelength conversion pattern 340 can be formed as an island-shaped pattern. For example, in a plan view, the first wavelength conversion pattern 340 can be completely surrounded by the dike-shaped pattern 370. Although the first wavelength conversion pattern 340 does not overlap with the light-blocking region BA in the figure, this is only an example. In some embodiments, a portion of the first wavelength conversion pattern 340 may overlap with the light-blocking region BA.

[0263] In some embodiments, the first wavelength conversion pattern 340 may directly contact the second capping layer 391 and / or the embankment pattern 370.

[0264] The first wavelength conversion pattern 340 can convert or transform the peak wavelength of the incident light into another set peak wavelength and output light having the set peak wavelength. In some embodiments, the first wavelength conversion pattern 340 can convert the output light LE provided by the first light-emitting element ED1 into red light with a peak wavelength in the range of 610 nm to 650 nm and output the red light.

[0265] In some embodiments, the first wavelength conversion pattern 340 may include a second matrix resin 341 and a first wavelength converter 345 dispersed in the second matrix resin 341, and may further include a second scatterer 343 dispersed in the second matrix resin 341.

[0266] The second matrix resin 341 may be made of a material with high light transmittance. In some embodiments, the second matrix resin 341 may be made of an organic material. In some embodiments, the second matrix resin 341 may be made of the same material as the first matrix resin 331 or may include (e.g.) at least one selected from exemplary materials that may be contained in the first matrix resin 331.

[0267] The first wavelength converter 345 can convert or transform the peak wavelength of the incident light (e.g., the output light LE entering the first wavelength conversion pattern 340) to another set peak wavelength. In some embodiments, the first wavelength converter 345 can convert the third color output light LE (which is blue light provided by the first light-emitting element ED1) into red light having a set (e.g., a single) peak wavelength in the range of 610 nm to 650 nm and output the red light.

[0268] Examples of the first wavelength converter 345 may include quantum dots, quantum rods, and / or phosphors. For example, quantum dots may be particulate materials used to emit light of a predetermined color when electrons transition from the conduction band to the valence band.

[0269] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have a defined band gap depending on their composition and size. Therefore, quantum dots can absorb light and subsequently emit light with a defined (e.g., unique) wavelength. Examples of semiconductor nanocrystals containing quantum dots include group IV compound nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, and combinations thereof.

[0270] Group II-VI compounds can be selected from binary compounds (chosen from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof) and ternary compounds (chosen from AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS) The compounds are selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, CdHgSe, and mixtures thereof) and quaternary compounds (selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof).

[0271] III-V group compounds may be selected from binary compounds (selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof), ternary compounds (selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InZnP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof), and quaternary compounds (selected from GaAlNAs, GaAlNP, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof).

[0272] Group IV-VI compounds can be selected from binary compounds (selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof), ternary compounds (selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof), and quaternary compounds (selected from SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof). Group IV elements can be selected from silicon (Si), germanium (Ge), and mixtures thereof. Group IV compounds can be binary compounds selected from silicon carbide (SiC), silicon-germanium (SiGe), and mixtures thereof.

[0273] Here, binary, ternary, and / or quaternary compounds may exist in the particles at a uniform concentration or at partially different concentrations. For example, the concentrations of binary, ternary, and / or quaternary compounds in the particles may be non-uniform. Furthermore, they may have a core / shell structure, such as one quantum dot surrounding (e.g., around) another quantum dot. The interface between the core and shell may have a concentration gradient in which the concentration of the elements present in the shell decreases towards the center (e.g., the center of the shell and / or the core).

[0274] In some embodiments, the quantum dots may have a core-shell structure, comprising a core containing the aforementioned nanocrystals and a shell surrounding (e.g., encircling) the core. The shell of each quantum dot may serve as a protective layer to maintain semiconductor properties by preventing or reducing chemical denaturation of the core and / or as a charging layer for imparting electrophoretic properties to the quantum dots. The shell may be monolayer or multilayer. The interface between the core and shell may have a concentration gradient in which the concentration of elements present in the shell decreases towards the center (e.g., the center of the shell and / or the core). The shell of each quantum dot may be, for example, a metal or nonmetal oxide, a semiconductor compound, or a combination thereof.

[0275] For example, metal or non-metal oxides can be, but are not limited to, binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO or combinations thereof, and / or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4 or combinations thereof.

[0276] In addition, the semiconductor compound may be, but is not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or combinations thereof.

[0277] The light emitted from the first wavelength converter 345 can have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Therefore, the color purity and color reproducibility of the display device 1 can be further improved. Furthermore, the light emitted from the first wavelength converter 345 can radiate in various directions, regardless of the incident direction of the incident light. Therefore, the lateral visibility (e.g., viewing angle) of the first color displayed in the first light-transmitting region TA1 can be improved (e.g., increased).

[0278] A portion of the output light LE provided by the first light-emitting element ED1 can be transmitted through the first wavelength conversion pattern 340 without being converted into red light by the first wavelength converter 345. In the output light LE, the component incident on the first color filter 231 but not converted by the first wavelength conversion pattern 340 can be blocked by the first color filter 231. On the other hand, the red light in the output light LE that has been converted by the first wavelength conversion pattern 340 can be transmitted through the first color filter 231 and emitted to the outside. For example, the first light L1 emitted from the display device 1 through the first light-transmitting region TA1 can be red light.

[0279] The second scatterer 343 may have a different refractive index than the second matrix resin 341 and may form an optical interface with the second matrix resin 341. For example, the second scatterer 343 may be a light-scattering particle. Other details of the second scatterer 343 are substantially the same as or similar to those of the first scatterer 333, and therefore a description thereof is not required.

[0280] The second wavelength conversion pattern 350 may be located in the space defined by the embankment pattern 370 in the second light-transmitting region TA2. For example, the second wavelength conversion pattern 350 may be located in the opening of the embankment pattern 370.

[0281] In some embodiments, such as Figure 19 As shown, the second wavelength conversion pattern 350 can be formed as an island-shaped pattern. For example, in a plan view, the second wavelength conversion pattern 350 can be completely surrounded by a dike-like pattern 370. In some embodiments, a portion of the second wavelength conversion pattern 350 can overlap with the light-blocking region BA.

[0282] In some embodiments, the second wavelength conversion pattern 350 may directly contact the second capping layer 391 and / or the embankment pattern 370.

[0283] The second wavelength conversion pattern 350 can convert or transform the peak wavelength of the incident light (e.g., the output light LE entering the second wavelength conversion pattern 350) to another set peak wavelength and output light having the set peak wavelength. In some embodiments, the second wavelength conversion pattern 350 can convert the output light LE provided by the second light-emitting element ED2 into green light in the range of about 510 nm to about 550 nm and output the green light.

[0284] In some embodiments, the second wavelength conversion pattern 350 may include a third matrix resin 351 and a second wavelength converter 355 dispersed in the third matrix resin 351, and may further include a third scatterer 353 dispersed in the third matrix resin 351.

[0285] The third matrix resin 351 may be made of a material with high light transmittance. In some embodiments, the third matrix resin 351 may be made of an organic material. In some embodiments, the third matrix resin 351 may be made of the same material as the first matrix resin 331 or may include (e.g.) at least one selected from exemplary materials that may be included in the first matrix resin 331.

[0286] The second wavelength converter 355 can convert or transform the peak wavelength of incident light (e.g., the output light LE entering the second wavelength conversion pattern 350) to another set peak wavelength. In some embodiments, the second wavelength converter 355 can convert blue light having a peak wavelength in the range of 440 nm to 480 nm into green light having a peak wavelength in the range of 510 nm to 550 nm.

[0287] Examples of the second wavelength converter 355 may include quantum dots, quantum rods, and / or phosphors. The second wavelength converter 355 may be substantially the same as or similar to the first wavelength converter 345 described above, and therefore a more detailed description thereof is not required.

[0288] In some embodiments, both the first wavelength converter 345 and the second wavelength converter 355 can be composed of quantum dots. In this case, the particle size of the quantum dots constituting the second wavelength converter 355 can be smaller than the particle size of the quantum dots constituting the first wavelength converter 345.

[0289] The third scatterer 353 may have a different refractive index than the third matrix resin 351 and may form an optical interface with the third matrix resin 351. For example, the third scatterer 353 may be a light scattering particle. Other details of the third scatterer 353 are substantially the same as or similar to those of the second scatterer 343, and therefore a description thereof is not required.

[0290] The output light LE emitted from the second light-emitting element ED2 can be provided to the second wavelength conversion pattern 350, and the second wavelength converter 355 can convert the output light LE provided by the second light-emitting element ED2 into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit the green light.

[0291] A portion of the blue output light LE can pass through the second wavelength conversion pattern 350 without being converted into green light by the second wavelength converter 355 and can be blocked by the second color filter 233. On the other hand, the green light LE converted by the second wavelength conversion pattern 350 can pass through the second color filter 233 and be emitted to the outside. Therefore, the second light L2 emitted from the display device 1 through the second light-transmitting area TA2 can be green light.

[0292] The third capping layer 393 may be located on (e.g., on) the embankment pattern 370, the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. The third capping layer 393 may cover the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350 (e.g., covering their bottom surfaces). In some embodiments, the third capping layer 393 may also be located in the non-display area NDA (see...). Figure 1 In the non-display area NDA (see...) Figure 1 The third capping layer 393 can directly contact the second capping layer 391 and seal the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Therefore, it can prevent or block the introduction of impurities such as moisture and / or air from the outside and damage or contaminate the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350.

[0293] In some embodiments, the third capping layer 393 may be made of an inorganic material. In some embodiments, the third capping layer 393 may be made of the same material as the second capping layer 391, or may include (for example) at least one selected from the exemplary materials mentioned in the description of the second capping layer 391.

[0294] As described above, the filler 70 can be located in the space between the color conversion substrate 30 and the display substrate 10. In some embodiments, such as Figure 7 As shown, filler 70 can directly contact the third capping layer 393 and the thin film encapsulation layer 170.

[0295] Figure 20 This is a view used to illustrate the reliability of the display device 1 according to an embodiment, and more specifically, Figure 20The images were obtained by testing the reliability of each display device under conditions of 85°C and 85% humidity by changing the structure of the thin-film encapsulation layer 170.

[0296] Figure 20 The first example, EX1, is a case where the thin-film encapsulation layer 170 consists of two lower inorganic layers, an organic layer, and an upper inorganic layer with a single-layer structure. For example, it is constructed by... Figure 10 The first sub-inorganic layer 1711 is omitted in the structure (see Figure 10 The structure obtained is as follows. The inorganic layer corresponding to the second sub-inorganic layer 1713 (see...). Figure 10 ) is composed of silicon oxynitride (SiO) x N y It is made of and formed to have a refractive index of 1.62 and a thickness of 0.8 μm, and is an inorganic layer corresponding to the first upper inorganic layer 175 (see Figure 10 ) is composed of silicon oxynitride (SiO) x N y It is made of and formed with a refractive index of 1.64 and a thickness of 0.7 μm.

[0297] In the first example EX1, after 750 hours (hr) in an environment with a temperature of 85°C and a humidity of 85%, approximately 45% of the display device 1 experienced display quality degradation in the edge portion A1 due to the penetration of moisture and oxygen. After 1,000 hours (hr), due to the penetration of external moisture and oxygen, the display device 1 according to the first example EX1 had 100% defects (e.g., 100% of the display device 1 was defective).

[0298] Figure 20 The second example EX2, compared to the first example EX1, further includes an inorganic layer corresponding to the first sub-inorganic layer 1711 in the thin-film encapsulation layer 170 (see [link to example EX2]). Figure 10 This is the case. Except for the components corresponding to the first sub-inorganic layer 1711 (see...) Figure 10 Except for the refractive index of the second sub-inorganic layer 1713, the second example EX2 is the same as the first example EX1. The inorganic layer corresponding to the first sub-inorganic layer 1711 (see...) Figure 10 ) is composed of silicon oxynitride (SiO) x N y It is made of and formed to have a refractive index of 1.62 and The thickness. The inorganic layer corresponding to the second inorganic layer 1713 is made of silicon oxynitride (SiO2). x N y It is made of and formed with a refractive index of 1.64 and a thickness of 0.8 μm.

[0299] In the second example EX2, even after 750 hours (hr), display device 1 showed no defects. After 1,000 hours (hr), approximately 5% of display devices 1 showed a slight color change at corner A2.

[0300] Figure 20 The third example EX3, compared to the second example EX2, further includes a fourth sub-inorganic layer 1751 with the thin-film encapsulation layer 170 (see [link to example EX3]). Figure 12 The case is the inorganic layer corresponding to the fourth sub-inorganic layer 1751. Except for the element corresponding to the fourth sub-inorganic layer 1751 (see...). Figure 12 Apart from the second example EX2, the third example EX3 is identical to the second example EX2. The inorganic layer corresponding to the fourth sub-inorganic layer 1751 (see...) Figure 12 ) is composed of silicon oxynitride (SiO) x N y It is made of and formed to have a refractive index of 1.62 and The thickness.

[0301] In the third example EX3, even after 750 hours (hr), display device 1 showed no defects. After 1,000 hours (hr), approximately 5% of display devices 1 showed some defects in part A3, but there were no signs of moisture or oxygen penetration at the edges of display devices 1.

[0302] According to the above embodiments, even if the extinction coefficient is converged to essentially zero by reducing the refractive index of the inorganic layer contained in the thin film encapsulation layer 170, the storage reliability of the thin film encapsulation layer 170 can be maintained at an excellent level (e.g., improved) because an additional inorganic layer is provided below the inorganic layer that acts as a barrier.

[0303] Therefore, according to one or more embodiments of this disclosure, the light efficiency of the display device 1 can be improved while maintaining its reliability. Furthermore, when an uneven structure is provided on the inorganic layer of the thin-film encapsulation layer 170, the spreadability of the organic material is improved, and the adhesion between the two layers is also improved. Therefore, the reliability of the display device 1 can be further improved.

[0304] Figure 21 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 2 according to the embodiment, taken by line X3-X3'.

[0305] refer to Figure 21 The display device 2 according to the current embodiment includes a display substrate 10, a color conversion substrate 31, and a filler 70. The display device 2 and... Figure 7The embodiments are substantially the same or similar, except for the configuration of the color conversion substrate 31, for example, except that the color conversion substrate 31 includes a color mixing prevention member 380 and does not include the dam pattern 370 (see Figure 7 In addition to this, we can omit unnecessary descriptions and focus on describing the differences.

[0306] The first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 may be located on the second capping layer 391. In some embodiments, the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330 may be formed by coating a photosensitive material and exposing and developing the photosensitive material.

[0307] The third capping layer 393 may be located on the first wavelength conversion pattern 340, the second wavelength conversion pattern 350, and the light-transmitting pattern 330. In some embodiments, the third capping layer 393 may directly contact the second capping layer 391 in the blocking region BA.

[0308] The color mixing prevention member 380 may be located on the surface (e.g., the bottom surface) of the third cover layer 393 facing the display substrate 10. For example, the third cover layer 393 may (e.g., cover) the top and side surfaces of the color mixing prevention member 380.

[0309] Color mixing prevention member 380 may be located in the light-blocking area BA to block the transmission of light. Color mixing prevention member 380 may be located between the light-transmitting pattern 330 and the first wavelength conversion pattern 340 and between the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350 to prevent or reduce color mixing between adjacent light-transmitting areas.

[0310] In some embodiments, the planar arrangement of the color mixing prevention component 380 can be consistent with... Figure 19 The embankment pattern 370 shown (see Figure 19 The arrangement of the components is basically the same or similar. However, this disclosure is not limited to this, and a variety of appropriate variations can be made to the planar structure of the color mixing prevention component 380.

[0311] In some embodiments, the color mixing prevention member 380 may include, for example, an organic light-blocking material and may be formed by coating the organic light-blocking material and exposing it to light.

[0312] In some embodiments, the color mixing prevention component 380 may directly contact the filler 70.

[0313] Other components of display device 2 can be referenced above. Figures 7 to 20 The described display device 1 is basically the same.

[0314] Figure 22 It is along Figure 3 and Figure 4 A cross-sectional view of the display device 3 according to the embodiment, taken by line X3-X3'. Figure 23 yes Figure 22 Enlarged cross-sectional view of part of Q7. Figure 24 yes Figure 23 A cross-sectional view of a deformation example.

[0315] refer to Figures 22 to 24 According to the current embodiment, the display device 3 and Figure 7 The embodiments are substantially the same or similar, except that the substrate 11 includes Figure 7 The color conversion base 30 shown (see Figure 7 The components of the matrix 310 are all omitted except for the second matrix 310, and the filler 70 is omitted. Therefore, the differences will be mainly described below.

[0316] The thin-film encapsulation layer 170 may be located on the cathode CE. In some embodiments, the first capping layer 160 may be located between the cathode CE and the thin-film encapsulation layer 170. Figure 10 The structures shown are essentially the same. In some embodiments, the structure of the thin-film encapsulation layer 170 can be appropriately modified to... Figure 12 The structure of the thin-film encapsulation layer 170_1 shown (see Figure 12 ), Figure 13 The structure of the thin film encapsulation layer 170_2 shown (see Figure 13 )or Figure 14 The structure of the thin-film encapsulation layer 170_3 shown (see Figure 14 ).

[0317] The second capping layer 391 may be located on the thin-film encapsulation layer 170. In some embodiments, the second capping layer 391 may contact the thin-film encapsulation layer 170. In some embodiments, the second capping layer 391 may be omitted.

[0318] A dam-shaped pattern 370, a light-transmitting pattern 330, a first wavelength conversion pattern 340, and a second wavelength conversion pattern 350 may be located on the second capping layer 391. The dam-shaped pattern 370 may overlap with the non-emitting region NLA and define a space corresponding to each of the first emitting region LA1, the second emitting region LA2, and the third emitting region LA3. For example, an opening in the dam-shaped pattern 370 may define the first emitting region LA1, the second emitting region LA2, and the third emitting region LA3. Each of the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350 may be located within the space defined by the dam-shaped pattern 370. The first wavelength conversion pattern 340 may overlap with the first emitting region LA1, the second wavelength conversion pattern 350 may overlap with the second emitting region LA2, and the light-transmitting pattern 330 may overlap with the third emitting region LA3.

[0319] The third capping layer 393 may be located on the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. In some embodiments, the third capping layer 393 may also be located on the embankment pattern 370.

[0320] The first color filter 231 that overlaps with the first luminous region LA1, the second color filter 233 that overlaps with the second luminous region LA2, the third color filter 235 that overlaps with the third luminous region LA3, and the color pattern 250 that overlaps with the non-luminous region NLA can be located on the third capping layer 393.

[0321] In some embodiments, a portion of the first color filter 231 and a portion of the second color filter 233 may overlap with the non-luminescent region NLA, and the color pattern 250 may be located on the first color filter 231 and the second color filter 233 within the non-luminescent region NLA.

[0322] In some embodiments, the light-blocking pattern 260 may be located in the non-emitting region NLA between the color pattern 250 and the first color filter 231 and between the color pattern 250 and the second color filter 233, and may overlap with the non-emitting region NLA. In some embodiments, the light-blocking pattern 260 may be omitted.

[0323] The upper thin-film encapsulation layer 270 can be located on the first color filter 231, the second color filter 233, the third color filter 235 and the color pattern 250.

[0324] The upper thin-film encapsulation layer 270 protects the components located below the upper thin-film encapsulation layer 270 from external foreign matter such as moisture.

[0325] The upper thin-film encapsulation layer 270 is disposed in all the first light-emitting areas LA1, the second light-emitting area LA2, the third light-emitting area LA3, and the non-light-emitting area NLA in the display area DA. In some embodiments, the upper thin-film encapsulation layer 270 may directly cover the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250 in the display area DA.

[0326] In some embodiments, the upper thin-film encapsulation layer 270 may include a second lower inorganic layer 271, a second organic layer 273, and a second upper inorganic layer 275 stacked in sequence.

[0327] In some embodiments, the second lower inorganic layer 271 may directly cover the first color filter 231, the second color filter 233, the third color filter 235 and the color pattern 250 in the display area DA, and may cover the dike pattern 370 and the color pattern 250 in the non-display area NDA.

[0328] The second organic layer 273 may be located on the second lower inorganic layer 271. The second organic layer 273 may be located over the entire display area DA, and a portion of the second organic layer 273 may be located in the non-display area NDA (see [link]). Figure 1 The second organic layer 273 may be made of the same material as the first organic layer 173 or may include (for example) one or more materials selected from exemplary materials that may be included in the first organic layer 173.

[0329] The second upper inorganic layer 275 may be located on the second organic layer 273. The second upper inorganic layer 275 may cover the second organic layer 273. In some embodiments, the second upper inorganic layer 275 may directly contact the second lower inorganic layer 271 in the non-display area NDA (see...). Figure 1 To form an inorganic-inorganic bond. The second upper inorganic layer 275 may be made of the same material as the first upper inorganic layer 175 or may include (for example) one or more materials selected from exemplary materials that may be included in the first upper inorganic layer 175.

[0330] In some embodiments, the thickness Th3a of the second organic layer 273 can be from about 2 μm to about 8 μm.

[0331] The second inorganic layer 271 may include (e.g.) an inorganic material and may have a multilayer structure. In some embodiments, such as Figure 24 As shown, the second lower inorganic layer 271 may include a seventh sub-inorganic layer 2711 and an eighth sub-inorganic layer 2713. Additionally, the second lower inorganic layer 271 may further include a ninth sub-inorganic layer 2715.

[0332] The seventh sub-inorganic layer 2711 can be located (e.g., directly on) the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250. The seventh sub-inorganic layer 2711 can prevent damage to the first color filter 231, the second color filter 233, the third color filter 235, and the color pattern 250 during the process of forming the eighth sub-inorganic layer 2713, or the seventh sub-inorganic layer 2711 can reduce such damage. For example, the seventh sub-inorganic layer 2711 can be used as a protective layer.

[0333] In some embodiments, the compressive stress of the seventh inorganic layer 2711 can be from 0 MPa to 200 MPa.

[0334] The eighth sub-inorganic layer 2713 may be located on the seventh sub-inorganic layer 2711. The eighth sub-inorganic layer 2713 can prevent or block moisture and / or oxygen from penetrating into the component located below the upper thin-film encapsulation layer 270. In some embodiments, the compressive stress of the eighth sub-inorganic layer 2713 may be from 0 MPa to 200 MPa.

[0335] The ninth inorganic layer 2715 can be located on the eighth inorganic layer 2713. The upper surface of the ninth inorganic layer 2715 can directly contact the second organic layer 273.

[0336] An irregularly patterned, uneven structure SR1a can be provided on the upper surface of the ninth inorganic layer 2715 and / or on the surface in contact with the second organic layer 273. This improves the spreadability of the second organic layer 273. The surface roughness of the uneven structure SR1a can be from 5 nm to 100 nm, depending on the root mean square roughness Rq.

[0337] In some embodiments, each of the refractive index n11a of the seventh sub-inorganic layer 2711 and the refractive index n15a of the ninth sub-inorganic layer 2715 may be less than the refractive index n13a of the eighth sub-inorganic layer 2713. For example, the refractive index n13a of the eighth sub-inorganic layer 2713 may be 1.5 to 1.7, and each of the refractive index n11a of the seventh sub-inorganic layer 2711 and the refractive index n15a of the ninth sub-inorganic layer 2715 may be 1.3 to less than 1.7 (e.g., equal to or greater than 1.3 and less than 1.7), as long as they are less than the refractive index n13a of the eighth sub-inorganic layer 2713.

[0338] In some embodiments, each of the thickness Th11a of the seventh sub-inorganic layer 2711 and the thickness Th15a of the ninth sub-inorganic layer 2715 may be less than the thickness Th13a of the eighth sub-inorganic layer 2713. For example, the thickness Th13a of the eighth sub-inorganic layer 2713 may be... arrive In some embodiments, the thickness Th11a of the seventh sub-inorganic layer 2711 can be arrive As long as it is less than the thickness Th13a of the eighth sub-inorganic layer 2713. In some embodiments, the thickness Th15a of the ninth sub-inorganic layer 2715 can be arrive As long as it is less than the thickness Th13a of the eighth inorganic layer 2713.

[0339] In some embodiments, the eighth sub-inorganic layer 2713 may be made of an oxide of a third material such as silicon, aluminum, tungsten, and / or titanium, and each of the seventh sub-inorganic layer 2711 and the ninth sub-inorganic layer 2715 may be made of an oxide or an oxide of a third material. Additionally, the oxygen atom content in the eighth sub-inorganic layer 2713 may be less than the oxygen atom content in the seventh sub-inorganic layer 2711 and / or the oxygen atom content in the ninth sub-inorganic layer 2715. In some embodiments, the nitrogen atom content in the eighth sub-inorganic layer 2713 may be greater than the nitrogen atom content in the seventh sub-inorganic layer 2711 and / or the nitrogen atom content in the ninth sub-inorganic layer 2715. For example, the seventh sub-inorganic layer 2711, the eighth sub-inorganic layer 2713, and the ninth sub-inorganic layer 2715 may all be made of silicon oxynitride. In addition, the eighth inorganic layer 2713 may have a relatively lower oxygen atom content than the seventh inorganic layer 2711 and / or the ninth inorganic layer 2715, and the eighth inorganic layer 2713 may have a relatively higher nitrogen atom content than the seventh inorganic layer 2711 and / or the ninth inorganic layer 2715.

[0340] refer to Figure 24 The upper thin-film encapsulation layer 270 (see...) can be used. Figure 23 ) modified to Figure 24 The upper thin-film encapsulation layer 270_1 shown is included. The upper thin-film encapsulation layer 270_1 may include a second lower inorganic layer 271, a second organic layer 273, and a second upper inorganic layer 275a.

[0341] The second upper inorganic layer 275a may include a tenth sub-inorganic layer 2751 and an eleventh sub-inorganic layer 2753.

[0342] The tenth inorganic layer 2751 can be located on the second organic layer 273 and can block or reduce the exhaust gas generated in the second organic layer 273.

[0343] The eleventh inorganic layer 2753 may be located on the tenth inorganic layer 2751 and may be used as a barrier layer to prevent or block the penetration of external moisture and / or oxygen.

[0344] In some embodiments, the thickness Th51a, refractive index n51a, and material of the tenth inorganic layer 2751 can be respectively related to those of the layer above. Figure 12The fourth sub-inorganic layer 1751 described in [the text] (see [the text]). Figure 12 The thickness Th51 (see) Figure 12 ), refractive index n51 (see Figure 12 The materials are basically the same.

[0345] In some embodiments, the thickness Th53a, refractive index n53a, and material of the eleventh inorganic layer 2753 can be respectively related to those of the layer above. Figure 12 The fifth sub-inorganic layer 1753 described in [the text] (see [the text]). Figure 12 The thickness Th53 (see) Figure 12 ), refractive index n53 (see Figure 12 The materials are basically the same.

[0346] Furthermore, the relationships between the thickness Th51a of the tenth inorganic layer 2751 and the thickness Th53a of the eleventh inorganic layer 2753, the refractive index n51a of the tenth inorganic layer 2751 and the refractive index n53a of the eleventh inorganic layer 2753, and the relationships between the inorganic materials contained in the tenth inorganic layer 2751 and the inorganic materials contained in the eleventh inorganic layer 2753 (e.g., the relationship between the oxygen atom content and the nitrogen atom content) can be compared with those described above. Figure 12 The fourth sub-inorganic layer 1751 described in [the text] (see [the text]). Figure 12 ) and the fifth inorganic layer 1753 (see Figure 12 The relationships between them are the same, and therefore a detailed description of them is not required.

[0347] The display device according to the above embodiments can prevent or block moisture and / or oxygen from penetrating from the outside, while preventing or suppressing light absorption by the inorganic layer of the thin-film encapsulation layer. Therefore, light efficiency can be improved. Furthermore, because damage to components located below the thin-film encapsulation layer can be prevented or reduced during the formation of the inorganic layer, which acts as a barrier, the reliability of the display device can be improved. Moreover, because the inorganic layer of the thin-film encapsulation layer in contact with the organic layer has an uneven structure, the ductility of the organic material during the formation of the organic layer can be improved, and interlayer adhesion can be improved, thereby further improving the reliability of the display device.

[0348] According to embodiments of this disclosure, a display device with improved display quality and reliability can be provided.

[0349] However, the embodiments of this disclosure are not limited to those set forth herein. These and other aspects of the embodiments of this disclosure will become more apparent to those skilled in the art upon which these embodiments pertain by referring to the claims.

[0350] Although some embodiments of this disclosure have been disclosed for illustrative purposes, those skilled in the art will understand that various appropriate modifications, additions and / or substitutions are possible without departing from the scope and spirit of this disclosure as disclosed in the appended claims and their equivalents.

Claims

1. A display device, wherein, The display device includes: Matrix; Light-emitting elements on the substrate; A capping layer on the light-emitting element; A thin-film encapsulation layer, the thin-film encapsulation layer comprising a first inorganic layer on the capping layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer; and A wavelength conversion pattern on the thin-film encapsulation layer that overlaps with the light-emitting element. The first inorganic layer includes a first sub-inorganic layer and a second sub-inorganic layer with different refractive indices. The first sub-inorganic layer is located on the capping layer, the second sub-inorganic layer is located on the first sub-inorganic layer, and the refractive index of the second sub-inorganic layer is greater than that of the first sub-inorganic layer. The refractive index of the first sub-inorganic layer and the refractive index of the second sub-inorganic layer are each 1.7 or less.

2. The display device according to claim 1, wherein, The refractive index of the second sub-inorganic layer is 1.5 to 1.7, and the refractive index of the first sub-inorganic layer is 1.3 to less than 1.

7.

3. The display device according to claim 2, wherein, The capping layer comprises an organic material, and the first inorganic sub-layer is in direct contact with the capping layer.

4. The display device according to claim 2, wherein, The thickness of the second sub-inorganic layer is greater than the thickness of the first sub-inorganic layer.

5. The display device according to claim 1, wherein, Each of the first sub-inorganic layer and the second sub-inorganic layer includes oxygen atoms, and the oxygen atom content of the first sub-inorganic layer is greater than the oxygen atom content of the second sub-inorganic layer.

6. The display device according to claim 5, wherein, Each of the first sub-inorganic layer and the second sub-inorganic layer further comprises nitrogen atoms, and the nitrogen atom content of the second sub-inorganic layer is greater than that of the first sub-inorganic layer.

7. The display device according to claim 6, wherein, The first and second sub-inorganic layers are made of silicon oxynitride.

8. The display device according to claim 1, wherein, The first inorganic layer further includes a third sub-inorganic layer on the second sub-inorganic layer and in contact with the organic layer, and the third sub-inorganic layer includes an uneven structure in contact with the organic layer.

9. The display device according to claim 8, wherein, The surface roughness of the third sub-inorganic layer in contact with the organic layer is greater than the surface roughness of the first sub-inorganic layer in contact with the second sub-inorganic layer.

10. The display device according to claim 8, wherein, The root mean square surface roughness of the non-uniform structure is 5 nm to 100 nm.

11. The display device according to claim 8, wherein, The refractive index of the third sub-inorganic layer is less than that of the second sub-inorganic layer, and the thickness of the third sub-inorganic layer is less than that of the second sub-inorganic layer.

12. The display device according to claim 1, wherein, The second inorganic layer includes a first sub-inorganic layer on the organic layer and a second sub-inorganic layer on the first sub-inorganic layer of the second inorganic layer, and Wherein, the refractive index of the first sub-inorganic layer of the second inorganic layer and the refractive index of the second sub-inorganic layer of the second inorganic layer are each 1.7 or less, the refractive index of the second sub-inorganic layer of the second inorganic layer is greater than the refractive index of the first sub-inorganic layer of the second inorganic layer, and the thickness of the second sub-inorganic layer of the second inorganic layer is greater than the thickness of the first sub-inorganic layer of the second inorganic layer.

13. The display device according to claim 12, wherein, The first sub-inorganic layer of the second inorganic layer and the second sub-inorganic layer of the second inorganic layer are made of silicon oxynitride. The oxygen atom content of the first sub-inorganic layer of the second inorganic layer is greater than the oxygen atom content of the second sub-inorganic layer of the second inorganic layer, and the nitrogen atom content of the second sub-inorganic layer of the second inorganic layer is greater than the nitrogen atom content of the first sub-inorganic layer of the second inorganic layer.

14. The display device according to claim 13, wherein, The display device further includes a filler between the wavelength conversion pattern and the thin-film encapsulation layer. The second inorganic layer further includes a third sub-inorganic layer between the second inorganic layer and the filler, and the third sub-inorganic layer of the second inorganic layer includes an uneven structure in contact with the filler.

15. The display device according to claim 14, wherein, The refractive index of the third sub-inorganic layer of the second inorganic layer is less than the refractive index of the second sub-inorganic layer of the second inorganic layer, and the thickness of the third sub-inorganic layer of the second inorganic layer is less than the thickness of the second sub-inorganic layer of the second inorganic layer.

16. The display device according to claim 1, wherein, The display device further includes a filler between the wavelength conversion pattern and the thin-film encapsulation layer. The second inorganic layer includes a first sub-inorganic layer on the organic layer and a second sub-inorganic layer on the first sub-inorganic layer and in contact with the filler. The second sub-inorganic layer of the second inorganic layer includes an uneven structure in contact with the filler, and the root mean square surface roughness of the uneven structure is 5 nm to 100 nm.

17. The display device according to claim 1, wherein, The light-emitting element includes a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer that overlap each other, and each of the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer emits light having a peak wavelength in the range of 440 nm to 550 nm. At least one of the first, second, and third light-emitting layers will emit light with a first peak wavelength, and the other of the first, second, and third light-emitting layers will emit light with a second peak wavelength that is different from the first peak wavelength.

18. A display device, wherein, The display device includes: Matrix; Light-emitting elements on the substrate; A capping layer on the light-emitting element; A thin-film encapsulation layer, the thin-film encapsulation layer comprising a first inorganic layer on the capping layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer; and A wavelength conversion pattern on the thin-film encapsulation layer that overlaps with the light-emitting element. The first inorganic layer comprises two sub-inorganic layers with different refractive indices. The display device further includes a filler between the wavelength conversion pattern and the thin-film encapsulation layer. The second inorganic layer includes a first sub-inorganic layer on the organic layer and a second sub-inorganic layer on the first sub-inorganic layer and in contact with the filler. The second sub-inorganic layer includes an uneven structure in contact with the filler, and the root mean square surface roughness of the uneven structure is 5 nm to 100 nm.

19. A display device, wherein, The display device includes: Matrix; Light-emitting elements on the substrate; A capping layer on the light-emitting element; A thin-film encapsulation layer, the thin-film encapsulation layer comprising a first inorganic layer on the capping layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer; and A wavelength conversion pattern on the thin-film encapsulation layer that overlaps with the light-emitting element. The first inorganic layer comprises two sub-inorganic layers with different refractive indices. The light-emitting element comprises a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer that overlap each other, and each of the first, second, and third light-emitting layers emits light with a peak wavelength in the range of 440 nm to 550 nm. At least one of the first, second, and third light-emitting layers will emit light with a first peak wavelength, and the other of the first, second, and third light-emitting layers will emit light with a second peak wavelength that is different from the first peak wavelength.

20. A display device, wherein, The display device includes: Matrix; Light-emitting elements on the substrate; A thin-film encapsulation layer, the thin-film encapsulation layer comprising a first inorganic layer on the light-emitting element, a first organic layer on the first inorganic layer, and a second inorganic layer on the first organic layer; A wavelength conversion pattern on the thin-film encapsulation layer and overlapping with the light-emitting element; A capping layer on the wavelength conversion pattern; A color filter on the capping layer and overlapping the wavelength conversion pattern; and An upper thin-film encapsulation layer is provided on the color filter and includes a third inorganic layer, a second organic layer on the third inorganic layer, and a fourth inorganic layer on the second organic layer. The third inorganic layer comprises a first sub-inorganic layer on the color filter and a second sub-inorganic layer on the first sub-inorganic layer, wherein the refractive index of the first sub-inorganic layer is different from the refractive index of the second inorganic layer. The refractive index of the second sub-inorganic layer is greater than that of the first sub-inorganic layer, and the refractive indexes of the first sub-inorganic layer and the second sub-inorganic layer are each 1.7 or less.

21. The display device according to claim 20, wherein, The refractive index of the second sub-inorganic layer is 1.5 to 1.7, and the refractive index of the first sub-inorganic layer is 1.3 to less than 1.

7.

22. The display device according to claim 21, wherein, The color filter comprises an organic material, and the first sub-inorganic layer is in direct contact with the color filter.

23. The display device according to claim 21, wherein, The third inorganic layer further includes a third sub-inorganic layer on the second sub-inorganic layer and in contact with the second organic layer, and the third sub-inorganic layer includes a non-flat structure in contact with the second organic layer.

24. The display device according to claim 23, wherein, The refractive index of the third sub-inorganic layer is less than that of the second sub-inorganic layer.

25. The display device according to claim 23, wherein, The fourth inorganic layer includes a fourth sub-inorganic layer on the second organic layer and a fifth sub-inorganic layer on the fourth sub-inorganic layer, and Wherein, the refractive index of the fourth sub-inorganic layer and the refractive index of the fifth sub-inorganic layer are each 1.7 or less, the refractive index of the fifth sub-inorganic layer is greater than the refractive index of the fourth sub-inorganic layer, and the thickness of the fifth sub-inorganic layer is greater than the thickness of the fourth sub-inorganic layer.

26. A display device, wherein, The display device includes: Matrix; Light-emitting elements on the substrate; A capping layer on the light-emitting element; A thin-film encapsulation layer, the thin-film encapsulation layer comprising a first inorganic layer on the capping layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer; and A wavelength conversion pattern on the thin-film encapsulation layer that overlaps with the light-emitting element. The first inorganic layer comprises two sub-inorganic layers with different refractive indices. The second inorganic layer comprises a first sub-inorganic layer on the organic layer and a second sub-inorganic layer on the first sub-inorganic layer, and Wherein, the refractive index of the first sub-inorganic layer and the refractive index of the second sub-inorganic layer are each 1.7 or less, the refractive index of the second sub-inorganic layer is greater than the refractive index of the first sub-inorganic layer, and the thickness of the second sub-inorganic layer is greater than the thickness of the first sub-inorganic layer.

27. The display device according to claim 26, wherein, The first and second sub-inorganic layers are made of silicon oxynitride. The oxygen atom content of the first sub-inorganic layer is greater than that of the second sub-inorganic layer, and the nitrogen atom content of the second sub-inorganic layer is greater than that of the first sub-inorganic layer.

28. The display device according to claim 27, wherein, The display device further includes a filler between the wavelength conversion pattern and the thin-film encapsulation layer. The second inorganic layer further includes a third sub-inorganic layer between the second sub-inorganic layer and the filler, and the third sub-inorganic layer includes an uneven structure in contact with the filler.

29. The display device according to claim 28, wherein, The refractive index of the third sub-inorganic layer is less than that of the second sub-inorganic layer, and the thickness of the third sub-inorganic layer is less than that of the second sub-inorganic layer.

30. The display device according to claim 26, wherein, The display device further includes a filler between the wavelength conversion pattern and the thin-film encapsulation layer. The second sub-inorganic layer is in contact with the filler, and the second sub-inorganic layer includes an uneven structure in contact with the filler, wherein the root mean square surface roughness of the uneven structure is 5 nm to 100 nm.

31. The display device according to claim 26, wherein, The light-emitting element includes a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer that overlap each other, and each of the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer emits light having a peak wavelength in the range of 440 nm to 550 nm. At least one of the first, second, and third light-emitting layers will emit light with a first peak wavelength, and the other of the first, second, and third light-emitting layers will emit light with a second peak wavelength that is different from the first peak wavelength.

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