固态成像装置
By introducing multilayer semiconductor structures and through electrodes into solid-state imaging devices, the problem of insufficient design freedom has been solved, enabling more flexible design and performance improvement.
CN113812000BActive Publication Date: 2026-07-17SONY SEMICON SOLUTIONS CORP
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SONY SEMICON SOLUTIONS CORP
- Filing Date
- 2020-06-26
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing solid-state imaging devices have limitations in design freedom, making further optimization difficult.
Method used
By introducing a multi-layer semiconductor structure, including a first semiconductor layer and a second semiconductor layer, into a solid-state imaging device, and by using through electrodes and connectors to achieve signal charge transmission and readout, the design freedom is increased.
Benefits of technology
It enables more freedom of design choices, enhances the independent design capabilities of photoelectric conversion units and pixel transistors, and improves the performance of imaging devices.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN113812000B_ABST
Abstract
根据本发明的固态成像装置包括：第一半导体层，其针对每个像素包括光电转换部和电荷累积部，在电荷累积部中累积有由光电转换部产生的信号电荷；像素分离部，其设置在第一半导体层中，并且将多个像素彼此分隔；第二半导体层，其设置有像素晶体管并且层叠在第一半导体层上，像素晶体管读出电荷累积部的信号电荷；和第一共享连接部，其设置在第二半导体层和第一半导体层之间，并且被设置成跨越像素分离部并且连接到多个电荷累积部。
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