Semiconducting single crystal silicon carbide bulk material and powder
By controlling the Si/C ratio and particle size distribution in the PVT process, intrinsic defect silicon vacancies are generated, solving the problems of low resistivity and yield of large-size silicon carbide wafers. This achieves high resistivity characteristics of high-purity semi-insulating single-crystal silicon carbide bulk materials and powders, simplifying the production process and reducing costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TAISIC MATERIALS CO
- Filing Date
- 2020-08-04
- Publication Date
- 2026-06-19
AI Technical Summary
Existing technologies make it difficult to produce large-size silicon carbide wafers with high resistivity, and the production cost is high with low yield. In particular, as the crystal size increases, it is difficult to improve the uniform resistivity and yield.
By controlling the Si/C ratio and particle size distribution of high-purity crystal growth raw materials through physical vapor transport (PVT), and controlling the crystal growth temperature and time, intrinsic defect silicon vacancies are generated during crystal growth, thereby increasing resistivity. Furthermore, the introduction of impurities is suppressed through a carbon-rich environment, avoiding additional annealing or neutron bombardment processes.
This technology enables the production of large-size, high-purity semi-insulating single-crystal silicon carbide bulk materials and powders with high resistivity, which simplifies the manufacturing process, reduces costs, and improves the uniform resistivity and yield of wafers.
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