Side venting substrate and method of manufacturing the same

Abstract

A side edge exhaust substrate includes a first insulating layer and a second insulating layer on the first insulating layer, and an exhaust passage is provided in the second insulating layer, wherein the exhaust passage includes an inlet hole penetrating the second insulating layer and a first exhaust hole located at a side edge of the second insulating layer and laterally leading the exhaust passage. A manufacturing method of a side edge exhaust substrate is also disclosed.

Description

Technical Field

[0001] This invention relates to electronic device packaging structures, specifically to side-venting substrates and their manufacturing methods. Background Technology

[0002] With the development of semiconductor packaging technology, high-density integrated packaging of multiple devices has become a current and future trend. Consequently, packaging methods and structures have diversified. Some chips and other components require shielding with metal or other materials after mounting to protect them from external radiation interference or to prevent external electronic components from being affected by internal electronic components. However, during the application of shielding and packaging, reflow soldering is usually required. During reflow soldering, the air inside the shield is heated and convection occurs, which can easily cause the shield to shift, potentially leading to instability, poor shielding effect, or electrical short circuits. Even worse, during packaging, the shield and substrate form a relatively sealed space. In this relatively sealed cavity, the internal air expands due to heat, which may cause internal components to deform or fail, or even cause the package to burst open.

[0003] In existing technologies, there are two main technical solutions: The first solution does not include venting holes. In this solution, during the application of the mask, the air inside the sealed cavity formed by the mask and the substrate expands due to heat, easily causing the mask to shift or even burst. The second solution involves pre-setting venting holes, typically using NPTH (non-plated through-hole) holes on the substrate. These venting holes penetrate both the upper and lower surfaces of the substrate and are generally formed by mechanical drilling, laser drilling, or punching. Because these venting holes in existing technologies are through-holes penetrating both surfaces of the substrate, when the package is used in a subsequent terminal, solder paste or encapsulation filler can easily seep in through the venting holes during soldering or encapsulation on the other side of the substrate, causing short circuits and other problems. Summary of the Invention

[0004] The present invention relates to a side-venting substrate and its manufacturing method to solve the aforementioned technical problems. During substrate processing, the present invention pre-defines sacrificial lines and sacrificial copper pillars. After substrate preparation, the sacrificial lines and sacrificial copper pillars are etched to form a venting channel with an outlet on the side of the substrate. When a package cap is applied for encapsulation, the air in the cavity formed by the package cap and the substrate expands due to heat and can be vented through the venting channel, preventing the package cap from shifting due to air expansion, thereby ensuring the protection and shielding effect of the package. Furthermore, since the venting holes of the venting channel are on the side of the substrate, subsequent soldering or encapsulation on the other side of the package can prevent solder paste or encapsulation filler from seeping into the venting channel and causing a short circuit. Simultaneously, the venting channel can also be used for suction sealing to form a vacuum environment or for injecting other gases, such as inert gases, to meet the special environmental requirements of components.

[0005] The first aspect of the present invention relates to a side-exhaust substrate, which includes a first insulating layer and a second insulating layer on the first insulating layer, wherein an exhaust channel is provided in the second insulating layer, and wherein the exhaust channel includes an air inlet hole penetrating the second insulating layer and a first exhaust hole located on the side of the second insulating layer that laterally connects to the exhaust channel.

[0006] In some embodiments, the exhaust channel is located between the lower surface of the second insulating layer and the upper surface of the first insulating layer.

[0007] In some embodiments, a sealed shield is provided on the second insulating layer, and the air inlet of the exhaust passage is covered within the shield.

[0008] In some embodiments, the exhaust passage further includes a second exhaust port that penetrates the second insulating layer and is not covered by the shield.

[0009] In some embodiments, a first circuit layer is disposed within the lower surface of the first insulating layer, a first copper pillar layer is disposed on the first circuit layer, a second circuit layer is disposed within the lower surface of the second insulating layer, a second copper pillar layer is disposed on the second circuit layer, and a third circuit layer is disposed on the second insulating layer. The first circuit layer and the second circuit layer are electrically connected through the first copper pillar layer, and the second circuit layer and the third circuit layer are electrically connected through the second copper pillar layer.

[0010] A second aspect of the present invention provides a method for manufacturing a side-venting substrate, comprising the following steps:

[0011] (a) Prepare a temporary support plate;

[0012] (b) A first circuit layer is formed on at least one side of the temporary support plate;

[0013] (c) A first copper pillar layer is formed on the first line layer, a first insulating layer is laminated on the first copper pillar layer, and the first insulating layer is thinned to expose the first copper pillar layer.

[0014] (d) A second circuit layer is formed on the first insulating layer, such that the first circuit layer and the second circuit layer are connected through the first copper pillar layer, wherein the second circuit layer includes a sacrificial circuit.

[0015] (e) A second copper pillar layer is formed on the second line layer, the second copper pillar layer including sacrificial copper pillars formed on the sacrificial line, a second insulating layer is laminated on the second copper pillar layer, and the second insulating layer is thinned to expose the second copper pillar layer.

[0016] (f) A third circuit layer is formed on the second insulating layer, such that the second circuit layer and the third circuit layer are electrically connected through the second copper pillar layer;

[0017] (g) Remove the temporary support plate;

[0018] (h) Etch the sacrificial copper pillar and the sacrificial line to form an exhaust channel.

[0019] Preferably, the manufacturing method further includes:

[0020] (i) After step h, components are mounted on the surface of the third circuit layer and wired, and then an encapsulation cap is applied to cover the components and the air inlet of the exhaust channel, such that the exhaust port of the exhaust channel is located outside the encapsulation cap.

[0021] Preferably, the temporary support plate comprises a copper-clad laminate with at least one side covered by double copper foil, wherein the copper-clad laminate comprises a core layer, a first copper layer on the surface of the core layer, and a second copper layer on the first copper layer, wherein the first copper layer and the second copper layer are attached together by physical lamination. Preferably, the core layer comprises a prepreg, the first copper layer has a thickness of 18 μm, and the second copper layer has a thickness of 3 μm.

[0022] Preferably, step (g) includes removing the temporary carrier plate by physically separating the first copper layer and the second copper layer and etching the second copper layer.

[0023] In some implementations, step (b) includes:

[0024] (b1) A first metal seed layer is formed on at least one side of the temporary support plate;

[0025] (b2) Apply a first photoresist layer to the first metal seed layer, and expose and develop to form a first feature pattern;

[0026] (b3) Electroplating is performed to form a first circuit layer in the first feature pattern;

[0027] (b4) Remove the first photoresist layer.

[0028] In some implementations, step (c) includes:

[0029] (c1) A second photoresist layer is applied to the first circuit layer, and the second feature pattern is formed by exposure and development;

[0030] (c2) Electroplating to form a first copper pillar layer in the second feature pattern;

[0031] (c3) Remove the second photoresist layer;

[0032] (c4) Apply a first insulating layer to the first copper pillar layer and thin the first insulating layer to expose the first copper pillar layer.

[0033] In some implementations, step (d) includes:

[0034] (d1) A second metal seed layer is formed on the first insulating layer;

[0035] (d2) A third photoresist layer is applied to the second metal seed layer, and the third feature pattern is formed by exposure and development;

[0036] (d3) A second circuit layer is formed by electroplating in the third feature pattern. The second circuit layer includes a conductive line and a sacrificial line, such that the first circuit layer and the conductive line are connected through the first copper pillar layer.

[0037] (d4) Remove the third photoresist layer.

[0038] In some implementations, step (e) includes:

[0039] (e1) A fourth photoresist layer is applied to the second circuit layer, and the fourth feature pattern is formed by exposure and development;

[0040] (e2) A second copper pillar layer is formed by electroplating in the fourth feature pattern. The second copper pillar layer includes sacrificial copper pillars and conductive copper pillars, such that the sacrificial copper pillars are connected to the sacrificial line and the conductive copper pillars are connected to the conductive line.

[0041] (e3) Remove the fourth photoresist layer and etch the second metal seed layer;

[0042] (e4) A second insulating layer is formed on the second copper pillar layer, and the second insulating layer is thinned to expose the second copper pillar layer.

[0043] Preferably, the metal seed layer comprises titanium, copper, titanium-tungsten alloy, or a combination thereof.

[0044] In some implementations, step (f) includes:

[0045] (f1) A third metal seed layer is formed on the second insulating layer;

[0046] (f2) A fifth photoresist layer is applied to the third metal seed layer, and the fifth feature pattern is formed by exposure and development.

[0047] (f3) Electroplating is performed in the fifth feature pattern to form a third circuit layer;

[0048] (f4) Remove the fifth photoresist layer and etch the third metal seed layer.

[0049] Preferably, the metal seed layer comprises titanium, copper, titanium-tungsten alloy, or a combination thereof.

[0050] In some embodiments, the manufacturing method further includes forming an etching barrier layer on at least one side of the temporary support plate prior to step (b).

[0051] Preferably, the etch barrier layer comprises nickel, titanium, or a combination thereof; more preferably, the etch barrier layer is selected from nickel. Attached Figure Description

[0052] To better understand the present invention and to illustrate embodiments thereof, reference is made below purely by way of example to the accompanying drawings.

[0053] When referring specifically to the accompanying drawings, it must be emphasized that the particular illustrations are exemplary and intended only to illustrately discuss preferred embodiments of the invention, and are presented for the purpose of providing illustrations that are considered most useful and readily understood for describing the principles and concepts of the invention. In this regard, no attempt is made to illustrate the structural details of the invention to a degree beyond what is necessary for a basic understanding of the invention; the description with reference to the drawings enables those skilled in the art to recognize how various forms of the invention can be practically embodied. In the drawings:

[0054] Figure 1 This is a cross-sectional schematic diagram of a side exhaust substrate according to an embodiment of the present invention;

[0055] Figures 2(a) to 2(s) This diagram shows a cross-sectional view of the intermediate structure of each step in a method for manufacturing a side exhaust substrate according to an embodiment of the present invention. Detailed Implementation

[0056] Reference Figure 1 The diagram shows a cross-sectional view of the side-exhaust substrate 100. The side-exhaust substrate 100 includes a first insulating layer 101 and a second insulating layer 102 located on the first insulating layer 101. An exhaust channel 104 is provided within the second insulating layer 102. An air inlet of the exhaust channel 104 extends upward through the second insulating layer 102, and a first exhaust port of the exhaust channel 104 is located on the side of the second insulating layer 102. The first insulating layer 101 and the second insulating layer 102 may include the same material or different materials; they may include insulating resin or glass fiber reinforced resin.

[0057] A hermetically sealed cover, such as an encapsulation cover, may be provided on the second insulating layer 102 of the substrate 100, and the air inlet of the exhaust channel 104 should be covered within the cover. The exhaust channel 104 may also include a second exhaust port, which extends upward from the exhaust channel 104 through the second insulating layer 102 and is not covered by the cover.

[0058] The first vent of the vent channel 104 is located on the side of the second insulating layer 102. When a shield such as a package cover is applied for encapsulation, the air in the cavity formed by the package cover and the substrate 100 will expand due to heat. The expanded air can be vented through the vent channel 104, preventing the package cover from shifting due to the thermal expansion of the air, thereby ensuring the protection and shielding effect of the package. Furthermore, since the vent hole of the vent channel is on the side of the substrate, it can prevent solder paste or encapsulation filler from seeping into the vent channel and causing a short circuit when the package is subsequently soldered or encapsulated on the other side. Preferably, the vent channel 104 can be located between the upper surface of the first insulating layer 101 and the lower surface of the second insulating layer 102.

[0059] like Figure 1 As shown, a first circuit layer 1015 is disposed within the lower surface of the first insulating layer 101, and a first copper pillar layer 1017 is disposed on the first circuit layer 1015. The end of the first copper pillar layer 1017 can be flush with the first insulating layer 101 or extend above the first insulating layer 101. The first copper pillar layer 1017 includes at least one conductive copper pillar. Preferably, the first copper pillar layer 1017 includes multiple conductive copper pillars as I / O channels, and their cross-sectional dimensions can be the same or different. The first copper pillar layer 1017 has uniform dimensions, which is more advantageous for heat dissipation and signal transmission stability in embedded packaging structures.

[0060] A second circuit layer 1023 is disposed within the lower surface of the second insulating layer 102, and a second copper pillar layer 1025 is disposed on the second circuit layer 1023. The end of the second copper pillar layer 1025 may be flush with or extend above the second insulating layer 102. The second copper pillar layer 1025 includes at least one conductive copper pillar. Preferably, the second copper pillar layer 1025 includes multiple conductive copper pillars as I / O channels, and their cross-sectional dimensions may be the same or different. The second copper pillar layer 1025 has uniform dimensions, which is more advantageous for heat dissipation and signal transmission stability in embedded packaging structures.

[0061] A third circuit layer 1028 is provided on the second insulating layer 102. The first circuit layer 1015 and the second circuit layer 1023 are connected by a first copper pillar layer 1017, and the second circuit layer 1023 and the third circuit layer 1028 are connected by a second copper pillar layer 1025.

[0062] Reference Figures 2(a) to 2(s) The diagram shows a cross-sectional schematic of the intermediate structure of each step in a method for manufacturing a side exhaust substrate according to an embodiment of the present invention.

[0063] The manufacturing method includes the following steps: preparing a temporary support plate and applying an etching barrier layer 1012 to at least one side of the temporary support plate—step (a), as shown in Figure 2(a). The temporary support plate includes a core layer 1011a, which can be a prepreg. Outwardly from the core layer 1011a are a first copper layer 1011b on the surface of the core layer 1011a and a second copper layer 1011c on the surface of the first copper layer 1011b. The first copper layer 1011b and the second copper layer 1011c are formed by physically bonding copper foil. The first copper layer 1011b and the second copper layer 1011c can be physically separated, facilitating the removal of the temporary support plate in subsequent processes. The thickness of the first copper layer 1011b and the second copper layer 1011c can be adjusted according to actual needs. Preferably, the thickness of the first copper layer 1011b is 18 μm and the thickness of the second copper layer 1011c is 3 μm. Typically, an etch stop layer 1012 and a first photoresist layer 1012 can be applied simultaneously to both sides of a temporary substrate and exposed and developed to form a first feature pattern. In this embodiment, individual units on both sides of the temporary substrate are subsequently demonstrated, but it is not limited to performing subsequent operations simultaneously on both sides of the temporary substrate. In the subsequent process of removing the temporary substrate, when etching the second copper foil layer 1011b after board separation, the etch stop layer 1012 can protect the circuit layer and copper pillar layer of the substrate, avoiding over-etching. The etch stop layer 1012 may include nickel, titanium, or a combination thereof, for example, an 8-15 μm nickel layer; the thickness of the etch stop layer 1012 can be adjusted according to actual needs, preferably, the thickness of the etch stop layer 1012 is 3-10 μm.

[0064] Next, a first metal seed layer 1013 is formed on the etch barrier layer 1012—step (b), as shown in FIG2(b). Typically, the first metal seed layer 1013 can be formed on the etch barrier layer 1012 by chemical plating or sputtering. The first metal seed layer 1013 may include titanium, copper, titanium-tungsten alloy or combinations thereof, and the thickness of the first metal seed layer 1013 ranges from 1 to 3 μm; preferably, titanium and copper are sputtered to form the first metal seed layer 1013.

[0065] Then, a first photoresist layer 1014 is applied to the first metal seed layer 1013, and the first feature pattern is formed by exposure and development—step (c), as shown in Figure 2(c). Typically, the first photoresist layer 1014 can be applied to the first metal seed layer 1013 by film application or coating; the thickness of the first photoresist layer 1014 can be adjusted as needed.

[0066] Next, a first circuit layer 1015 is electroplated in the first feature pattern to form a first circuit layer 1015, and the first photoresist layer 1014 is removed—step (d), as shown in Figure 2(d). Typically, the thickness of the first circuit layer 1015 can be adjusted as needed, and usually the thickness of the first circuit layer 1015 is not greater than the thickness of the first photoresist layer 1014. The first photoresist layer 1014 can be removed by stripping.

[0067] Then, a second photoresist layer 1016 is applied to the first circuit layer 1015, and the second feature pattern is formed by exposure and development—step (e), as shown in Figure 2(e). Typically, the second photoresist layer 1016 can be applied to the first circuit layer 1015 by lamination or coating; the thickness of the second photoresist layer 1016 can be adjusted as needed.

[0068] Next, a first copper pillar layer 1017 is electroplated in the second feature pattern, the second photoresist layer 1016 is removed, a first insulating layer 101 is applied to the first copper pillar layer 1017, and the first insulating layer 101 is thinned to expose the first copper pillar layer 1017—step (f), as shown in Figure 2(f). Typically, after the first copper pillar layer 1017 is formed, its surface can be browned to increase the bonding strength between the first copper pillar layer 1017 and its outer covering, the first insulating layer 101. The shape of the first copper pillar layer 1017 can be set according to actual needs; for example, it can be square, circular, etc., without specific limitations. The first copper pillar layer 1017 may include at least one conductive copper pillar, and the first copper pillar layer 1017 may include conductive copper pillars of different sizes; the thickness of the first copper pillar layer 1017 can be adjusted according to actual needs. Typically, the thickness of the first copper pillar layer 1017 is not greater than the thickness of the second photoresist layer 1016; the first copper pillar layer 1017 has uniform dimensions, which is more advantageous for heat dissipation and signal transmission stability of the embedded packaging structure. The second photoresist layer 1016 can be removed by stripping. Typically, the first insulating layer 101 can be formed on the first copper pillar layer 1017 by lamination or vacuum hot pressing. Typically, the first insulating layer 101 can be thinned overall by grinding or plasma etching to expose the ends of the first copper pillar layer 1017; the first insulating layer 101 can also be partially thinned by laser or drilling to expose the ends of the first copper pillar layer 1017; preferably, the first insulating layer 101 is thinned overall by grinding or plasma etching.

[0069] Then, a second metal seed layer 1021 is formed on the first insulating layer 101, and a third photoresist layer 1022 is applied on the second metal seed layer 1021. Exposure and development are then performed to form the third feature pattern—step (g), as shown in Figure 2(g). Typically, the second metal seed layer 1021 can be formed on the first insulating layer 101 by chemical plating or sputtering. The second metal seed layer 1021 may include titanium, copper, a titanium-tungsten alloy, or a combination thereof; preferably, titanium and copper are sputtered to form the second metal seed layer 1021. The third photoresist layer 1022 can be applied by lamination or coating, and the thickness of the third photoresist layer 1022 can be adjusted according to actual needs.

[0070] Next, a second circuit layer 1023 is electroplated in the third feature pattern. The second circuit layer 1023 includes a conductive line 1023a and a sacrificial line 1023b, so that the first circuit layer 1015 and the conductive line 1023a are connected through the first copper pillar layer 1017. The third photoresist layer 1022 is then removed—step (h), as shown in Figure 2(h). Typically, the thickness of the second circuit layer 1023 can be adjusted according to actual needs, and usually the thickness of the second circuit layer 1023 is not greater than the thickness of the third photoresist layer 1022. The sacrificial line 1023b is used for subsequent fabrication of the exhaust channel, and the thickness of the sacrificial line 1023b can be adjusted according to the expected size of the exhaust channel. The third photoresist layer 1022 can be removed by stripping.

[0071] Then, a fourth photoresist layer 1024 is applied to the second circuit layer 1023, and a fourth feature pattern is formed by exposure and development. A second copper pillar layer 1025 is formed by electroplating in the fourth feature pattern. The second copper pillar layer 1025 includes sacrificial copper pillars 1025b and conductive copper pillars 1025a. The sacrificial copper pillars 1025b are formed on the sacrificial circuit 1023b, and the conductive copper pillars 1025a are connected to the conductive circuit 1023a—step (i), as shown in Figure 2(i). Typically, after the conductive copper pillars 1025a are formed, their surfaces can be browned to increase the bonding force between the conductive copper pillars 1025a and the outer covering second insulating layer 102. The shape of the second copper pillar layer 1025 can be set according to actual needs, for example, it can be square, circular, etc., and is not specifically limited. The second copper pillar layer 1025 may include at least one conductive copper pillar 1025a and at least one sacrificial copper pillar 1025b. The second copper pillar layer 1025 may include conductive copper pillars 1025a of different sizes. The thickness of the second copper pillar layer 1025 can be adjusted according to actual needs. Typically, the thickness of the second copper pillar layer 1025 is not greater than the thickness of the fourth photoresist layer 1024. The conductive copper pillars 1025a have uniform dimensions, which is more advantageous for heat dissipation and signal transmission stability in the embedded packaging structure. The sacrificial copper pillar 1025b is connected to the sacrificial line 1023b, which facilitates the subsequent fabrication of the exhaust channel. The thickness of the sacrificial copper pillar 1025b can be adjusted according to the expected size of the exhaust channel. The fourth photoresist layer 1024 can be applied to the second line layer by film lamination or coating.

[0072] Next, the fourth photoresist layer 1024 is removed, and the second metal seed layer 1021 is etched—step (j), as shown in Figure 2(j). Typically, the fourth photoresist layer 1024 can be removed by stripping.

[0073] Then, a second insulating layer 102 is formed on the second copper pillar layer 1025, and the second insulating layer 102 is thinned to expose the second copper pillar layer—step (k), as shown in FIG2(k). Typically, the second insulating layer 102 can be formed on the second copper pillar layer 1025 by lamination or vacuum hot pressing. The second insulating layer 102 can be pure resin or a resin containing glass fiber as a reinforcing material. Typically, the second insulating layer 102 can be thinned overall by grinding or plasma etching to expose the ends of the second copper pillar layer 1025; the second insulating layer 102 can also be partially thinned by laser or drilling to expose the ends of the second copper pillar layer 1025; preferably, the second insulating layer 102 is thinned overall by grinding or plasma etching.

[0074] Next, a third metal seed layer 1026 is formed on the second insulating layer 102, and a fifth photoresist layer 1027 is applied on the third metal seed layer 1026. Exposure and development are then performed to form the fifth feature pattern—step (l), as shown in Figure 2(l). Typically, the third metal seed layer 1026 can be formed on the second insulating layer 102 by chemical plating or sputtering. The third metal seed layer 1026 may include titanium, copper, a titanium-tungsten alloy, or a combination thereof; preferably, titanium and copper are sputtered to form the third metal seed layer 1026. The fifth photoresist layer 1027 can be applied by lamination or coating.

[0075] Then, a third circuit layer 1028 is electroplated in the fifth feature pattern, the fifth photoresist layer 1027 is removed, and the third metal seed layer 1026 is etched—step (m), as shown in Figure 2 (m). Typically, the thickness of the third circuit layer 1028 can be adjusted according to actual needs, and the thickness of the third circuit layer 1028 is lower than the thickness of the fifth photoresist layer 1027; the third circuit layer 1028 and the conductive line 1023a are connected by conductive copper pillars 1025a. The fifth photoresist layer 1027 can be removed by stripping. It should be noted that this embodiment only uses a three-layer board as an example. In practical applications, more layers can be fabricated according to the above layer-adding method to meet the needs of different product structures.

[0076] Next, a sixth photoresist layer 1029 is applied to the entire third circuit layer 1028 and exposed for curing, separating the first copper layer 1011b and the second copper layer 1011c—step (n), as shown in Figure 2(n). Typically, the sixth photoresist layer 1029 is applied to protect the third circuit layer 1028 when the temporary carrier board is removed; the sixth photoresist layer 1029 can be applied by lamination or coating.

[0077] Then, the second copper layer 1011c, the etch barrier layer 1012, and the first metal seed layer 1013 are etched to remove the sixth photoresist layer 1029—step (o), as shown in Figure 2(o). Typically, the etch barrier layer can be etched away using a specific etching solution, for example, using a nickel etching solution. The sixth photoresist layer 1029 can be removed by stripping.

[0078] Next, a seventh photoresist layer 1030 is applied to the third circuit layer 1028, and exposure and development are performed to expose the end of the sacrificial copper pillar 1025b—step (p), as shown in Figure 2(p).

[0079] Then, the sacrificial copper pillar 1025b, the sacrificial line 1023b, and the second metal seed layer 1021 at the bottom of the sacrificial line 1023b are etched to form an exhaust channel 104. The seventh photoresist layer 1030 is then removed to obtain the substrate 100—step (q), as shown in Figure 2 (q). The sacrificial copper pillar 1025b, the sacrificial line 1023b, and the second metal seed layer 1021 at the bottom of the sacrificial line 1023b are etched to form an exhaust channel 104 at the positions of the sacrificial copper pillar 1025b and the sacrificial line 1023b. The air inlet of the exhaust channel 104 is located on the upper surface of the second insulating layer 102, and the exhaust outlet is located on the side of the second insulating layer 102 and the upper surface of the second insulating layer 102.

[0080] Next, components 105 are mounted on the surface of the third circuit layer 1028 and wire bonded. A package cover 106 is then applied to cover the components 105 and the air inlet of the exhaust channel 104, ensuring that the exhaust port of the exhaust channel 104 is located outside the package cover 106—step (r), as shown in Figure 2(r). The exhaust path of the exhaust channel is shown by the arrow in the figure. During the application of the package cover 106, the air inside the cavity formed by the package cover 106 and the substrate 100 expands due to heat and can be discharged through the exhaust channel 104, preventing the package cover 106 from bursting open.

[0081] As an alternative, the venting channel 104 can also be used to draw gas from the package cover 106. After drawing, a vacuum can be created inside the package cover 106 by sealing the venting port to meet the application environment where the component 105 needs to be in a vacuum. Alternatively, the venting channel 104 can also be used as a channel for injecting other gases, such as inert gases. In this case, an inert gas, such as an inert gas, can be injected into the package cover 106 from the venting port outside the package cover 106 through the venting channel 104 to meet the application environment where the component 105 needs, for example, inert gas protection.

[0082] Finally, the material is cut along the dicing lines to form the encapsulation structure 200—step(s), as shown in Figure 2(s). The dicing lines are shown as dashed lines in the figure.

[0083] Those skilled in the art will recognize that the present invention is not limited to the specific illustrations and descriptions in the context. Furthermore, the scope of the invention is defined by the appended claims, including combinations and sub-combinations of the various technical features described above, as well as variations and modifications thereof, which will be foreseen by those skilled in the art upon reading the foregoing description.

[0084] In the claims, the term "comprising" and its variations, such as "including" or "containing," means that the listed components are included, but generally do not exclude other components.

Claims

1. A method for manufacturing a side-venting substrate, comprising the following steps: (a) Prepare a temporary support plate; (b) A first circuit layer is formed on at least one side of the temporary support plate; (c) A first copper pillar layer is formed on the first line layer, a first insulating layer is laminated on the first copper pillar layer, and the first insulating layer is thinned to expose the first copper pillar layer; (d) A second circuit layer is formed on the first insulating layer such that the first circuit layer and the second circuit layer are electrically connected through the first copper pillar layer, wherein the second circuit layer includes a sacrificial circuit; (e) A second copper pillar layer is formed on the second line layer, the second copper pillar layer including sacrificial copper pillars formed on the sacrificial line, a second insulating layer is laminated on the second copper pillar layer, and the second insulating layer is thinned to expose the second copper pillar layer; (f) A third circuit layer is formed on the second insulating layer, such that the second circuit layer and the third circuit layer are electrically connected through the second copper pillar layer; wherein, The third circuit layer is used for surface mount components; (g) Remove the temporary support plate; (h) Etch the sacrificial copper pillar and the sacrificial line to form an exhaust channel; The exhaust channel includes an air inlet that penetrates the second insulating layer and a first exhaust port that laterally connects to the exhaust channel on the side of the second insulating layer. The exhaust channel also includes a second exhaust port that penetrates the second insulating layer. (i) After step h, components are mounted on the surface of the third circuit layer and wired, and then an encapsulation cap is applied to cover the components and the air inlet of the exhaust channel, such that the exhaust hole of the exhaust channel is located outside the encapsulation cap.

2. The manufacturing method according to claim 1, wherein the temporary support plate comprises a copper-clad laminate with at least one side covered with double copper foil, wherein the copper-clad laminate comprises a core layer, a first copper layer on the surface of the core layer and a second copper layer on the first copper layer, wherein the first copper layer and the second copper layer are attached together by physical pressing.

3. The manufacturing method according to claim 1, wherein step (b) comprises: (b1) A first metal seed layer is formed on at least one side of the temporary support plate; (b2) A first photoresist layer is applied to the first metal seed layer, and the first feature pattern is formed by exposure and development; (b3) Electroplating is performed to form a first circuit layer in the first feature pattern; (b4) Remove the first photoresist layer.

4. The manufacturing method according to claim 1, wherein step (c) comprises: (c1) A second photoresist layer is applied to the first circuit layer, and the second feature pattern is formed by exposure and development; (c2) Electroplating to form a first copper pillar layer in the second feature pattern; (c3) Remove the second photoresist layer; (c4) Apply a first insulating layer to the first copper pillar layer and thin the first insulating layer to expose the first copper pillar layer.

5. The manufacturing method according to claim 1, wherein step (d) comprises: (d1) A second metal seed layer is formed on the first insulating layer; (d2) A third photoresist layer is applied to the second metal seed layer, and the third feature pattern is formed by exposure and development; (d3) A second circuit layer is formed by electroplating in the third feature pattern. The second circuit layer includes a conductive line and a sacrificial line, such that the first circuit layer and the conductive line are connected through the first copper pillar layer. (d4) Remove the third photoresist layer.

6. The manufacturing method according to claim 5, wherein step (e) comprises: (e1) A fourth photoresist layer is applied on the second circuit layer, and the fourth feature pattern is formed by exposure and development; (e2) A second copper pillar layer is formed by electroplating in the fourth feature pattern. The second copper pillar layer includes sacrificial copper pillars and conductive copper pillars, such that the sacrificial copper pillars are connected to the sacrificial line and the conductive copper pillars are connected to the conductive line. (e3) Remove the fourth photoresist layer and etch the second metal seed layer; (e4) A second insulating layer is formed on the second copper pillar layer, and the second insulating layer is thinned to expose the second copper pillar layer.

7. The manufacturing method according to claim 1, wherein step (f) comprises: (f1) A third metal seed layer is formed on the second insulating layer; (f2) A fifth photoresist layer is applied to the third metal seed layer, and the fifth feature pattern is formed by exposure and development; (f3) A third circuit layer is formed by electroplating in the fifth feature pattern; (f4) Remove the fifth photoresist layer and etch the third metal seed layer.

8. The manufacturing method according to claim 3, 5 or 7, wherein the metal seed layer comprises titanium, copper, titanium-tungsten alloy or a combination thereof.

9. The manufacturing method according to claim 2, wherein step (g) comprises removing the temporary carrier plate by physically separating the first copper layer and the second copper layer and etching the second copper layer.

10. The manufacturing method according to claim 1, further comprising forming an etching barrier layer on at least one side of the temporary support plate prior to step (b).

11. The manufacturing method of claim 10, wherein the etch barrier layer comprises nickel, titanium, or a combination thereof.

12. A side-venting substrate prepared by the manufacturing method according to any one of claims 1 to 11, comprising a first insulating layer and a second insulating layer on the first insulating layer, wherein an exhaust channel is provided in the second insulating layer, wherein the exhaust channel includes an air inlet penetrating the second insulating layer and a first exhaust port laterally communicating with the exhaust channel located on the side of the second insulating layer; a third circuit layer is provided on the second insulating layer; wherein, The third circuit layer is used for surface mount components; A sealed shield is provided on the second insulating layer, and the air inlet of the exhaust channel is covered inside the shield; The exhaust channel also includes a second exhaust port, which penetrates the second insulating layer and is not covered by the shield.

13. The side-venting substrate according to claim 12, wherein the venting channel is between the lower surface of the second insulating layer and the upper surface of the first insulating layer.

14. The side-exhaust substrate according to claim 12, wherein a first circuit layer is disposed in the lower surface of the first insulating layer, a first copper pillar layer is disposed on the first circuit layer, a second circuit layer is disposed in the lower surface of the second insulating layer, a second copper pillar layer is disposed on the second circuit layer, the first circuit layer and the second circuit layer are electrically connected through the first copper pillar layer, and the second circuit layer and the third circuit layer are electrically connected through the second copper pillar layer.

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