Apparatus for manufacturing a display device

Abstract

An apparatus for manufacturing a display device includes a chamber, a heating member disposed within the chamber to provide a hot atmosphere within the chamber, wherein the heating member includes a first heater and a second heater facing each other, a height adjusting member including an end portion disposed between the first heater and the second heater, and a driving unit driving the end portion of the height adjusting member to move upward or downward such that the end portion of the height adjusting member is located at one of a first height and a second height, the first height and the second height being different heights between the first heater and the second heater. Each of the first height and the second height is different from a height of a top surface of the first heater and different from a height of a bottom surface of the second heater facing the top surface of the first heater.

Description

[0001] This application claims priority to and all benefits arising therefrom of Korean Patent Application No. 10-2020-0078370, filed on June 26, 2020, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] This disclosure relates to an apparatus for manufacturing display devices. Background Technology

[0003] With the development of multimedia technology, the importance of display devices has steadily increased. As a result, various types of display devices, such as liquid crystal displays (“LCDs”) and organic light-emitting displays (“OLEDs”), have recently been widely used.

[0004] In display devices, self-emissive display devices include self-emissive elements such as organic light-emitting diodes (OLEDs). A self-emissive element may include two opposing electrodes and an emissive layer between them. When using an organic light-emitting diode as a self-emissive element, electrons and holes from the two electrodes recombine in the emissive layer to generate excitons, which then transition from an excited state to a ground state, thereby emitting light.

[0005] The process of manufacturing organic light-emitting diodes can include baking a target substrate on which multiple thin films are formed. This baking process is mainly performed by applying heat to the target substrate using a heater. Summary of the Invention

[0006] Embodiments of this disclosure provide an apparatus for manufacturing a display device, the apparatus being capable of uniformly heat-treating a large-area substrate and adjusting the process temperature profile.

[0007] An embodiment of an apparatus for manufacturing a display device includes: a chamber; a heating member disposed inside the chamber to provide a hot atmosphere inside the chamber, wherein the heating member includes a first heater and a second heater facing each other; a height adjustment member including an end disposed between the first heater and the second heater; and a drive unit for driving the end of the height adjustment member to move upward or downward such that the end of the height adjustment member is located at one of a first height and a second height, the first height and the second height being different heights between the first heater and the second heater, wherein each of the first height and the second height is different from the height of the top surface of the first heater and different from the height of the bottom surface of the second heater facing the top surface of the first heater.

[0008] An embodiment of an apparatus for manufacturing a display device includes: a chamber; a heating member including a first heater disposed in the lower part of the chamber and a second heater disposed in the upper part of the chamber; a height adjustment member supporting a target substrate, wherein at least a portion of the height adjustment member is disposed between the first heater and the second heater; and a driving unit for adjusting the height of the target substrate by raising or lowering the height adjustment member to a predetermined height, wherein the width of the first heater and the width of the second heater are each greater than the width of the target substrate, and each side surface of the first heater and the side surface of the second heater protrudes outwardly than the side surface of the target substrate.

[0009] In such an embodiment, the apparatus for manufacturing a display device can perform uniform heat treatment on a large-area substrate under a regulated process temperature profile.

[0010] The effects of this disclosure are not limited to those described above, and various other effects are included in the specification. Attached Figure Description

[0011] The above and other features of this disclosure will become more apparent from the detailed description of embodiments thereof with reference to the accompanying drawings, in which:

[0012] Figure 1 This is a schematic view of a manufacturing apparatus according to an embodiment;

[0013] Figure 2 It is a schematic view showing the heat flow inside the chamber;

[0014] Figure 3 This is a view illustrating a scene according to an embodiment, in which the target substrate is arranged in the thermal equilibrium zone of the chamber;

[0015] Figure 4 This is a view showing the thermal equilibrium position that varies according to the temperature inside the chamber, according to an embodiment;

[0016] Figure 5 It is a graph showing the rate of temperature rise of the target substrate as varying with the distance between the first heater and the target substrate according to an embodiment;

[0017] Figure 6 It is a curve of the specific heat capacity of the target substrate crystallized according to the rate of temperature increase;

[0018] Figure 7 This is a plan view of a display device manufactured by a display device manufacturing apparatus according to an embodiment;

[0019] Figure 8 yes Figure 7 A partial cross-sectional view of the display device;

[0020] Figure 9 This is a schematic view of a manufacturing apparatus according to an alternative embodiment;

[0021] Figure 10 It is a schematic representation of the basis Figure 9 A view of the heat flow inside the manufacturing apparatus of an embodiment;

[0022] Figure 11 It is a graph showing the temperature variation based on the position between point A and point B of the first heater;

[0023] Figure 12 This is a schematic view of a manufacturing apparatus according to another alternative embodiment; and

[0024] Figure 13 This is a schematic view of a manufacturing apparatus according to yet another alternative embodiment. Detailed Implementation

[0025] The invention will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the invention are illustrated. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals throughout denote the same elements.

[0026] It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or there may be layers in between. Throughout the specification, the same reference numerals indicate the same parts. In the drawings, the thickness of layers and regions is exaggerated for clarity.

[0027] While the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms can be used to distinguish one element from another. Therefore, without departing from the teachings of one or more embodiments, a first element discussed below may be referred to as a second element. Describing an element as a “first” element may not require the presence of a second element or other elements, or may imply the presence of a second element or other elements. The terms “first,” “second,” etc., may also be used herein to distinguish different categories or groups of elements. For brevity, the terms “first,” “second,” etc., may respectively represent “first class (or first group),” “second class (or second group),” etc.

[0028] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a,” “an,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both the singular and the plural unless the context clearly indicates otherwise. For example, “an element” has the same meaning as “at least one element” unless the context clearly indicates otherwise. “At least one” should not be construed as limiting “a” or “an.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. It will be further understood that, when used in this specification, the terms “comprising” and / or “including” or “containing” and / or “comprising” specify the presence of the stated features, areas, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integers, steps, operations, elements, components, and / or groups thereof.

[0029] Furthermore, this document may use relative terms such as “down” or “bottom” and “up” or “top” to describe the relationship between one element and another as shown in the figures. It should be understood that, in addition to the orientation depicted in the figures, the relative terms are intended to cover different orientations of the device. For example, if the device in one of the figures is flipped, the element described as being “down” to the other element will be oriented “up” to the other element. Thus, the term “down” can cover both “down” and “up” orientations, depending on the specific orientation of the figure. Similarly, if the device in one of the figures is flipped, the element described as being “below” or “under” the other element will be oriented “above” the other element. Thus, the term “below” or “under” can cover both above and below orientations.

[0030] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It should be further understood that terms such as those defined in common dictionaries shall be interpreted as having meanings consistent with their meanings in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formalized sense, unless expressly defined herein.

[0031] This document describes embodiments with reference to sectional views, which are schematic illustrations of idealized embodiments. Therefore, variations in the illustrated shapes are contemplated as a result of, for example, manufacturing techniques and / or tolerances. Consequently, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but rather include, for example, shape deviations caused by manufacturing processes. For example, regions shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, the acute angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to represent the precise shapes of the regions, nor are they intended to limit the scope of the claims.

[0032] In the following description, embodiments will be described in detail with reference to the accompanying drawings.

[0033] Figure 1 This is a schematic view of a manufacturing apparatus according to an embodiment. Figure 2 It is a schematic view showing the heat flow inside the chamber. Figure 3 This is a view showing a scene in which the target substrate is arranged in the thermal equilibrium zone of the chamber according to an embodiment.

[0034] Figure 2 The chamber 110 and heating element 120 according to an embodiment are shown. Figure 2 The heat flow in the embodiments is shown, but this disclosure is not limited thereto. Figure 3 An embodiment is shown in which the target substrate S is moved to the thermal equilibrium zone HEA by the height adjustment member 130.

[0035] Reference Figures 1 to 3 An embodiment of the manufacturing apparatus 10 for the display device may include a chamber 110, a heating member 120, a height adjustment member 130, a comparison operation unit 140, and a drive unit 150.

[0036] Chamber 110 defines an empty internal space in which heaters 121 and 122, as well as a height adjustment member 130, can be disposed. In one embodiment, for example, chamber 110 may provide space for performing a baking process, but this disclosure is not limited thereto. In embodiments, such as Figure 1 As shown, chamber 110 may have a cuboid shape, but this disclosure is not limited thereto. Alternatively, chamber 110 may have any shape of various forms. A heat treatment atmosphere may be provided inside chamber 110. In an embodiment, a first heater 121 and a second heater 122 may be arranged inside chamber 110 to provide a heat treatment atmosphere.

[0037] The heating element 120 can provide heat for performing a baking process. The heating element 120 can apply heat to the target substrate S. The heating element 120 may include a first heater 121 and a second heater 122. The first heater 121 and the second heater 122 may face each other or be arranged opposite each other, and the target substrate S may be disposed between the first heater 121 and the second heater 122. The first heater 121 and the second heater 122 may be parallel to each other.

[0038] The first heater 121 and the second heater 122 can be arranged at the lower and upper parts of the chamber 110, respectively, facing each other. The first heater 121, as the main heater, can create a hot atmosphere inside the chamber 110. The second heater 122, as an auxiliary heater, can be arranged spaced apart from the first heater 121 and provide further heat to the space spaced apart from the first heater 121. The second heater 122 can be used to uniformly create a hot atmosphere inside the chamber 110. That is, the second heater 122, arranged in addition to the first heater 121 inside the chamber 110, can improve the temperature uniformity inside the chamber 110.

[0039] The first heater 121 and the second heater 122 may each include heating wires HL1 and HL2, and a power supply unit (not shown). In an embodiment, the first heater 121 may include a first heating wire HL1 located therein, and the second heater 122 may include a second heating wire HL2 located therein. The first heating wire HL1 and the second heating wire HL2 may be powered by the power supply unit (not shown) and heat the first heater 121 and the second heater 122. The first heater 121 and the second heater 122 heated by the heating wires HL1 and HL2 may form a hot atmosphere inside the chamber 110.

[0040] A thermal equilibrium region (HEA) can be formed between the first heater 121 and the second heater 122, in which heat is balanced. The HEA can be thermally homogeneous. That is, the first heater 121 and the second heater 122 can emit heat, and the heat can be transferred to every region inside the chamber 110 via convection and / or radiation. Although the first heater 121 and the second heater 122 emit heat to form a heat treatment atmosphere inside the chamber 110, and the heat is transferred via convection and / or radiation, a thermal equilibrium state is achieved in a local region (the thermal equilibrium region HEA) in which the temperature is homogeneous and can remain homogeneous throughout the entire area. The location of the thermal equilibrium region HEA can vary based on the temperatures of the first heater 121 and the second heater 122.

[0041] When heat emitted by the first heater 121 and the second heater 122 is transferred through convection and / or radiation, the heat emitted by the first heater 121 and the heat emitted by the second heater 122 can establish an equilibrium with each other in the thermal equilibrium region HEA, which can remain in a thermally uniform state throughout its entire area. In such an embodiment, the heat emitted from the first heater 121 and the second heater 122 is uniform and / or the temperatures of the first heater 121 and the second heater 122 are uniform, such that the thermal equilibrium region HEA can maintain a uniform temperature throughout its entire area and maintain the same temperature throughout its entire area.

[0042] In such an embodiment, when the target substrate S is arranged in the thermal equilibrium region HEA by the height adjustment member 130, which will be described later, a baking process can be performed to apply the same temperature to the entire area of ​​the target substrate S. Therefore, in such an embodiment, pixels located in different positions can be heat-treated uniformly to avoid or prevent defects caused by pixels located in different positions and thus manufactured at different temperatures, such as brightness differences and imperfections on the display device.

[0043] The first heater 121 and the second heater 122 can completely cover the target substrate S. The width W1 of the first heater 121 can be greater than the width WS of the target substrate S, and the width W2 of the second heater 122 can be greater than the width WS of the target substrate S. The side surface of the first heater 121 can protrude outward beyond the side surface of the target substrate S, and the side surface of the second heater 122 can protrude outward beyond the side surface of the target substrate S. The planar area of ​​the first heater 121 can be greater than the planar area of ​​the target substrate S, and the planar area of ​​the second heater 122 can be greater than the planar area of ​​the target substrate S. The entire area of ​​the target substrate S can overlap with the first heater 121 in the thickness direction, and can also overlap with the second heater 122 in the thickness direction. In such an embodiment, in a plan view, the edge of the first heater 121 can surround the edge of the target substrate S, and in a plan view, the edge of the second heater 122 can surround the edge of the target substrate S.

[0044] The width W1 of the first heater 121 and the width W2 of the second heater 122 can be substantially equal to each other, and the side surface of the first heater 121 can be aligned with the side surface of the second heater 122, but this disclosure is not limited thereto. In embodiments where the width W1 of the first heater 121 and the width W2 of the second heater 122 are equal to each other, a uniform thermal atmosphere can be effectively provided inside the chamber 110.

[0045] In embodiments where the width W1 of the first heater 121 and the width W2 of the second heater 122 are each greater than the width WS of the target substrate S, and the side surfaces of the first heater 121 and the second heater 122 protrude outward beyond the side surface of the target substrate S, heat treatment can be further performed uniformly over the entire area of ​​the target substrate S. In such embodiments, the inner (overlapping area in the thickness direction) and outer (non-overlapping area in the thickness direction) sides of the first heater 121 and the second heater 122 can differ in the hot atmosphere, such that convection and / or radiation can actively occur along the boundary between the inner and outer sides, meaning that the hot atmosphere is non-uniform around the inner edge.

[0046] In one embodiment, the side surface of the first heater 121 and the edge of the second heater 122 may protrude outward beyond the edge of the target substrate S, such that the boundary between the inner and outer sides of the first heater 121 and the second heater 122 is separated from the target substrate S by a predetermined distance. In such an embodiment, the edge and central regions of the target substrate S are effectively prevented from being in different heat treatment atmospheres, allowing the baking process to be performed at the same or constant temperature over the entire area of ​​the target substrate S.

[0047] In an embodiment, the manufacturing apparatus 10 for the display device may further include a position measuring unit TS for measuring the position of the thermal equilibrium region HEA. The position measuring unit TS may be disposed on the target substrate S. In one embodiment, for example, the position measuring unit TS may be disposed on the top surface and / or the bottom surface of the target substrate S, but is not limited thereto. The position measuring unit TS may also be disposed on one of the top surface, bottom surface, and side surface of the target substrate S, or on the height adjustment member 130, but is not limited thereto.

[0048] The position measurement unit TS may include a temperature sensor for measuring the temperature inside chamber 110. The temperature sensor can measure the temperature inside chamber 110, temperature changes, and the position of the thermal equilibrium zone HEA based on the position of the position measurement unit TS. In an alternative embodiment, the position of the thermal equilibrium zone HEA can be measured based on the temperatures of the first heater 121 and the second heater 122 to obtain data regarding the measurement and / or function of the temperatures of the first heater 121 and the second heater 122 with respect to the thermal equilibrium zone HEA. In such an embodiment, the position measurement unit TS can be connected to the first heater 121 and the second heater 122 to measure the position of the thermal equilibrium zone HEA based on pre-stored data and / or functions according to the temperatures of the first heater 121 and the second heater 122.

[0049] The height adjustment member 130 can support the target substrate S. The height adjustment member 130 can be at least partially arranged between the first heater 121 and the second heater 122. The target substrate S can be arranged on one end (e.g., the top) of the height adjustment member 130. One end of the height adjustment member 130 can be arranged between the first heater 121 and the second heater 122.

[0050] The height adjustment member 130 can support the target substrate S, such as its edge, so that the target substrate S is positioned horizontally. The height adjustment member 130 can move vertically along the thickness direction of the first heater 121 and / or the second heater 122. Therefore, the target substrate S placed on the height adjustment member 130 can move upward and downward along the thickness direction of the first heater 121 and / or the second heater 122 to adjust the height of the target substrate S. In such an embodiment, the height adjustment member 130 can adjust the gap between the first heater 121 and the target substrate S.

[0051] By adjusting the height of the target substrate S using the height adjustment member 130, even when the size of the target substrate S increases, the target substrate S can be spaced apart from the first heater 121 and / or the second heater 122 to be exposed to a uniform thermal atmosphere.

[0052] The heat K can be proportional to the product of the heat capacity C and the temperature change T, as shown in Equation 1 (“Eq.1”) below, and the heat capacity C can be proportional to the product of the specific heat S and the mass G, as shown in Equation 2 (“Eq.2”) below.

[0053] K=C×T…………Eq.1

[0054] C=S×G…………Eq.2

[0055] In other words, the size (area) of the first heater 121 and the second heater 122 can increase as the size (area) of the target substrate S increases. Since the heat K used to heat the first heater 121 and the second heater 122 is proportional to the mass G, it is desirable that the size of the first heater 121 and the second heater 122 increase and their thickness decrease as the size (area) of the target substrate S increases, and it is also desirable that the heat K increases. However, there are limitations to reducing the thickness of the first heater 121 and the second heater 122 and increasing the heat K.

[0056] Therefore, when the target substrate S is placed on the first heater 121 or the second heater 122 to heat the target substrate S, the temperature of the first heater 121 and / or the temperature of the second heater 122 may be difficult to reach the desired temperature for the baking process of the target substrate S, and the temperature may vary between regions.

[0057] In an embodiment of the present invention, the manufacturing apparatus 10 for the display device includes a second heater 122 and a first heater 121, and a target substrate S is spaced apart from the first heater 121 and the second heater 122 by using a height adjustment member 130, so that a baking process can be performed over the entire area of ​​the target substrate S in a uniform hot atmosphere. However, the present disclosure is not limited thereto, and alternatively, the target substrate S may selectively contact the first heater 121 during the heating process.

[0058] The height adjustment member 130 can support the target substrate S, such that the target substrate S is arranged parallel to the first heater 121 and / or the second heater 122. The target substrate S placed on the height adjustment member 130 can be spaced apart from the first heater 121 and the second heater 122. Therefore, the temperature of the target substrate S can be different from that of the first heater 121 and / or the second heater 122.

[0059] Although not shown, the height adjustment member 130 may be disposed on the bottom surface of the chamber 110 through the first heater 121. However, this disclosure is not limited thereto, and alternatively, the height adjustment member 130 may be disposed on the first heater 121 or on a side surface of the chamber 110.

[0060] The comparison operation unit 140 can compare the position of the target substrate S with the position of the thermal equilibrium region HEA. In this embodiment, the comparison operation unit 140 can compare the position of the target substrate S with the position of the thermal equilibrium region HEA obtained by the position measurement unit TS, and send the comparison result to the driving unit 150.

[0061] The drive unit 150 can drive the height adjustment member 130 to move up and down in the thickness direction of the first heater 121 and / or the second heater 122. In an embodiment, the drive unit 150 can drive the height adjustment member 130 to adjust the height of one end (e.g., the top) of the height adjustment member 130. Therefore, the height of the target substrate S placed on one end (e.g., the top) of the height adjustment member 130 can be adjusted.

[0062] The drive unit 150 can adjust one end of the height adjustment member 130 to a predetermined height or different heights. As used herein, the term "height" refers to the distance between one end of the height adjustment member 130 and the top surface (or the bottom surface opposite the top surface) of the first heater 121. That is, the drive unit 150 can adjust the distance between one end of the height adjustment member 130 and the top or bottom surface of the first heater 121. The drive unit 150 can also adjust the distance between one end of the height adjustment member and the top or bottom surface of the second heater 122.

[0063] However, this disclosure is not limited thereto, and the drive unit 150 may, for example, position one end of the height adjustment member 130 at one of a first height and a second height, which are different heights between the first heater 121 and the second heater 122. The end of the height adjustment member 130 located at one of the first and second heights may be located within the thermal equilibrium zone HEA. The distance between the end of the height adjustment member 130 at the first height and the top surface of the first heater 121 may be different from the distance between the end of the height adjustment member 130 at the second height and the top surface of the first heater 121. In such an embodiment, the distance between the end of the height adjustment member 130 at the first height and the bottom surface of the second heater 122 may be different from the distance between the end of the height adjustment member 130 at the second height and the bottom surface of the second heater 122.

[0064] In this embodiment, the distance between one end of the height adjustment member 130 at the first height and the top surface of the first heater 121 may be less than the distance between one end of the height adjustment member 130 and the bottom surface of the second heater 122, and the distance between one end of the height adjustment member 130 at the second height and the top surface of the first heater 121 may be greater than the distance between one end of the height adjustment member 130 and the bottom surface of the second heater 122. Each of the first height and the second height may be different from the height of the top surface of the first heater 121 and different from the height of the bottom surface of the second heater 122 facing the top surface of the first heater 121.

[0065] The driving unit 150 can drive the height adjustment member 130 based on the comparison result received from the comparison operation unit 140, such that the target substrate S is arranged in the thermal equilibrium region HEA. Therefore, in such an embodiment, the target substrate S can be moved into the thermal equilibrium region HEA. In this embodiment, the driving unit 150 can be arranged outside the chamber 110, but this disclosure is not limited thereto. Alternatively, the driving unit 150 can be arranged inside the chamber 110.

[0066] The drive unit 150 can adjust the height of the height adjustment member 130 to position the target substrate S at one of several different heights and fix the target substrate S in a position for performing the baking process. The rate of temperature increase and decrease of the target substrate S can vary depending on the position of the target substrate S, which can cause the characteristics of the target substrate S to change after the baking process. That is, the characteristics of the target substrate S can be adjusted by adjusting the position (or height) of the target substrate S by adjusting the height adjustment member 130. Referring to the following... Figures 4 to 5 Describe this feature in more detail.

[0067] Figure 4This is a view showing the thermal equilibrium position that varies according to the temperature inside the chamber, according to an embodiment. Figure 5 It is a graph showing the rate of temperature rise of the target substrate as varying with the distance between the first heater and the target substrate, according to an embodiment.

[0068] In the embodiments, reference is made to Figure 4 Multiple thermal equilibrium zones HEA1, HEA2, and HEA3 can be formed in different areas between the first heater 121 and the second heater 122 inside the chamber 110. The internal temperatures of thermal equilibrium zones HEA1, HEA2, and HEA3 can be different.

[0069] However, this disclosure is not limited thereto, and the thermal equilibrium zones HEA1, HEA2, and HEA3 may have internal temperatures that increase as the distances g1, g2, and g3 from the first heater 121 decrease. That is, the distance g2 between the second thermal equilibrium zone HEA2 and the first heater 121 may be greater than the distance g1 between the first thermal equilibrium zone HEA1 and the first heater 121, and the distance g3 between the third thermal equilibrium zone HEA3 and the first heater 121 may be greater than the distance g2 between the second thermal equilibrium zone HEA2 and the first heater 121. In such an embodiment, the temperature of the second thermal equilibrium zone HEA2 may be lower than the temperature of the first thermal equilibrium zone HEA1, and the temperature of the third thermal equilibrium zone HEA3 may be lower than the temperature of the second thermal equilibrium zone HEA2.

[0070] Although for the sake of explanation, in Figure 4 The figure shows first to third thermal equilibrium zones HEA1, HEA2, and HEA3, but these zones can each be formed according to the temperature of the first heater 121 and / or the temperature of the second heater 122. That is, the positions of the first to third thermal equilibrium zones HEA1, HEA2, and HEA3 can be adjusted by regulating the temperature of the first heater 121 and / or the second heater 122. However, this disclosure is not limited to this, and multiple thermal equilibrium zones HEA1, HEA2, and HEA3 can be formed even if the temperatures of the first heater 121 and the second heater 122 are maintained uniformly. Although three thermal equilibrium zones HEA1, HEA2, and HEA3 are shown in the figure, the number of thermal equilibrium zones HEA1, HEA2, and HEA3 is not limited to this.

[0071] As the thermal equilibrium zones HEA1, HEA2, and HEA3 move closer to the first heater 121, the rate of temperature rise of the target substrate S arranged in each thermal equilibrium zone HEA1, HEA2, and HEA3 can vary.

[0072] Further reference Figure 5 , Figure 5The lines on the graph represent the temperature of the target substrate S as a function of time. Line (a) of the graph shows the target substrate S arranged on... Figure 4 The situation in the first thermal equilibrium zone HEA1, line (b) of the graph shows the target substrate S arranged in... Figure 4 The situation in the second thermal equilibrium zone HEA2, and line (c) of the graph shows the target substrate S arranged in... Figure 4 The situation in the third thermal equilibrium region HEA3.

[0073] As the thermal equilibrium zones HEA1, HEA2, and HEA3 move closer to the first heater 121, the rate of temperature rise of the target substrate S arranged in the thermal equilibrium zones HEA1, HEA2, and HEA3 can be increased. In other words, as the thermal equilibrium zones HEA1, HEA2, and HEA3 move closer to the first heater 121, the time it takes for the target substrate S arranged in each thermal equilibrium zone HEA1, HEA2, and HEA3 to reach the threshold temperature (the temperature used for the baking process) can be reduced.

[0074] In the embodiment, although not shown in the figures, the cooling rate of the target substrate S arranged in the thermal equilibrium regions HEA1, HEA2, and HEA3 can have an inverse relationship with the temperature rise rate with respect to the distance between the thermal equilibrium regions HEA1, HEA2, and HEA3 and the first heater 121. That is, the cooling rate of the target substrate S can increase as the distance between the thermal equilibrium regions HEA1, HEA2, and HEA3 in which the target substrate S is arranged and the first heater 121 increases.

[0075] In the embodiment, the positions of the thermal equilibrium regions HEA1, HEA2, and HEA3 can be adjusted by adjusting the temperature of the first heater 121 and / or the temperature of the second heater 122, and the temperature rise rate of the target substrate S can be adjusted by arranging the target substrate S in any one of the thermal equilibrium regions HEA1, HEA2, and HEA3.

[0076] Even when the target substrate S comprises the same material, the properties of the target substrate S can change with the rate of temperature increase of the target substrate S during the baking process. The following will refer to... Figure 6 Describe these features in detail.

[0077] Figure 6 It is a curve showing the specific heat capacity of the target substrate crystallized according to the rate of temperature increase.

[0078] Further reference Figure 6 , Figure 6 Curves (a), (b), and (c) on the graph represent the specific heat capacity of the target substrate crystallized according to the rate of temperature increase. Curve (a) shows the target substrate S arranged on... Figure 4The situation in the first thermal equilibrium zone HEA1, curve (b) of the graph shows the target substrate S arranged in... Figure 4 The situation in the second thermal equilibrium zone HEA2, and curve (c) of the graph shows the target substrate S arranged in... Figure 4 The situation in the third thermal equilibrium region HEA3.

[0079] When the temperature rise rate of the target substrate S is higher, the specific heat capacity of the target substrate S may be lower after crystallization. That is, when the thermal equilibrium regions HEA1, HEA2, and HEA3 are closer to the first heater 121, the specific heat capacity of the target substrate S disposed in the thermal equilibrium regions HEA1, HEA2, and HEA3 may be lower when it crystallizes through the baking process. Furthermore, as the temperature rise rate of the target substrate S increases, a more uniform specific heat capacity can be obtained based on the time it is exposed to the hot atmosphere.

[0080] Figure 6 The specific heat capacity graph shown illustrates an example of how the characteristics of the target substrate S change according to the rate of temperature rise of the target substrate S after the baking process. However, this disclosure is not limited thereto, and although described later, in cases where the target substrate S includes various components of a display device, the electrical characteristics of the individual components can vary according to the rate of temperature rise of the target substrate S.

[0081] The manufacturing apparatus 10 described above can be used to manufacture display devices. In the following text, reference will be made to... Figure 7 and Figure 8 A display device manufactured using the manufacturing apparatus 10 according to an embodiment is described.

[0082] Figure 7 This is a plan view of a display device manufactured by a display device manufacturing apparatus according to an embodiment. Figure 8 yes Figure 7 A partial cross-sectional view of the display device.

[0083] Reference Figure 7 and Figure 8 The display device 20 can be formed in a generally rectangular shape in a plan view. The display device 20 can have a rectangular shape with right-angled corners in a plan view. However, this disclosure is not limited to this, and alternatively, the display device 20 can have a rectangular shape with rounded corners in a plan view.

[0084] Display device 20 displays a screen or image via a display area DPA, and various devices including a display area DPA can be included therein. Examples of display device 20 may include, but are not limited to, smartphones, mobile phones, tablet PCs, personal digital assistants (“PDAs”), portable multimedia players (“PMPs”), televisions, game consoles, wristwatch-type electronic devices, head-mounted displays, personal computer monitors, laptop computers, car navigation systems, car dashboards, digital cameras, camcorders, external billboards, electronic billboards, various medical devices, various examination equipment, various household appliances including a display area DPA such as refrigerators and washing machines, Internet of Things devices, etc.

[0085] Display device 20 includes a display area DPA and a non-display area NDA. The display area DPA is the area that defines the screen or displays an image, while the non-display area NDA is the area where no image is displayed.

[0086] Multiple pixels can be disposed in the display area DPA. A pixel is a basic unit for displaying an image. Pixels may include, but are not limited to, red pixels, green pixels, and blue pixels. Multiple pixels may be arranged alternately in a planar diagram. In one embodiment, for example, pixels may be arranged in a matrix, but this disclosure is not limited thereto.

[0087] The non-display area NDA can be disposed around the display area DPA. The non-display area NDA can be disposed around the display area DPA, and can surround the display area DPA. In one embodiment, for example, the display area DPA can be formed in a rectangular shape, and the non-display area NDA can be disposed around the four sides of the display area DPA, but this disclosure is not limited thereto.

[0088] The stacking structure of the display device 20 will be described in detail below.

[0089] In an embodiment, such as Figure 8 As shown, the display device 20 may include a lower component 21, a display panel 22, a touch component 23, an anti-reflective component 24, and a cover window 25. The lower component 21, display panel 22, touch component 23, anti-reflective component 24, and cover window 25 may be stacked sequentially. At least one bonding component (such as an adhesive layer or tackifier layer) may be provided between the stacked components to bond adjacent stacked components. However, this disclosure is not limited to this, and another layer may be further provided between the layers, and some components in the stacked components may be omitted.

[0090] Display panel 22 is a panel used to display images. In embodiments, display panel 22 may include not only self-emissive display panels, such as organic light-emitting display (“OLED”) panels, inorganic electroluminescent (“EL”) display panels, quantum dot (“QED”) display panels, micro light-emitting diode (“LED”) display panels, nano-LED display panels, plasma display panels (“PDP”), field emission display (“FED”) panels, and cathode ray tube (“CRT”) display panels, but also light-receiving display panels, such as liquid crystal display (“LCD”) panels and electrophoretic display (“EPD”) panels. Hereinafter, for ease of description, embodiments of display panel 22 as an organic light-emitting display panel will be described in detail. However, embodiments are not limited to organic light-emitting display panels, and other types of display panels described above or known in the art may be applied within the scope of the teachings herein.

[0091] The display panel 22 may include a base substrate SUB1, a buffer layer SUB2, a semiconductor layer ACT, a first insulating layer IL1, a first gate conductive layer 221, a second insulating layer IL2, a second gate conductive layer 222, a third insulating layer IL3, a data conductive layer 223, a fourth insulating layer IL4, an anode electrode ANO, a pixel defining layer PDL including an opening exposing the anode electrode ANO, a light-emitting layer EML disposed in the opening of the pixel defining layer PDL, a cathode electrode CAT disposed on the light-emitting layer EML and the pixel defining layer PDL, and a thin film encapsulation layer EM disposed on the cathode electrode CAT. Each of the above layers may have a single-layer structure or a multilayer structure with multiple layers stacked. Other layers may be further disposed between the layers.

[0092] The base substrate SUB1 can support the layers disposed thereon. The base substrate SUB1 may include an insulating material such as a polymer resin or an inorganic material such as glass or quartz, or may be made of an insulating material such as a polymer resin or an inorganic material such as glass or quartz.

[0093] A buffer layer SUB2 is disposed on the base substrate SUB1. The buffer layer SUB2 may include silicon nitride, silicon oxide, silicon oxynitride, etc.

[0094] A semiconductor layer ACT is disposed on the buffer layer SUB2. The semiconductor layer ACT forms the channel of the thin-film transistor of the pixel. The semiconductor layer ACT may include, or be made of, polycrystalline silicon, monocrystalline silicon, amorphous silicon, etc., or may include oxide semiconductors. Polycrystalline silicon can be formed by crystallizing amorphous silicon, but this disclosure is not limited thereto. Oxide semiconductors may include indium gallium zinc oxide (“IGZO”), etc.

[0095] The first insulating layer IL1 is disposed on the semiconductor layer ACT. The first insulating layer IL1 may be a gate insulating layer with gate insulation function.

[0096] A first gate conductive layer 221 is disposed on a first insulating layer IL1. The first gate conductive layer 221 may include the gate electrode GAT of the pixel's thin-film transistor, a scan line connected thereto, and the first electrode CE1 of the storage capacitor.

[0097] The second insulating layer IL2 can be disposed on the first gate conductive layer 221. The second insulating layer IL2 can be an interlayer insulating layer or a second gate insulating layer.

[0098] The second gate conductive layer 222 is disposed on the second insulating layer IL2. The second gate conductive layer 222 may include the second electrode CE2 of the storage capacitor.

[0099] The third insulating layer IL3 is disposed on the second gate conductive layer 222. The third insulating layer IL3 may be an interlayer insulating layer.

[0100] A data conductive layer 223 is disposed on a third insulating layer IL3. The data conductive layer 223 may include a first electrode SD1, a second electrode SD2, and a first power line ELVDDE of the thin-film transistor of the pixel. The first electrode SD1 and the second electrode SD2 of the thin-film transistor may be electrically connected to the source region and the drain region of the semiconductor layer ACT via contact holes defining the third insulating layer IL3, the second insulating layer IL2, and the first insulating layer IL1.

[0101] A fourth insulating layer IL4 is disposed on the data conductive layer 223. The fourth insulating layer IL4 covers the data conductive layer 223. The fourth insulating layer IL4 can be a via layer or a planarization layer.

[0102] The anode electrode ANO is disposed on the fourth insulating layer IL4. The anode electrode ANO can be a pixel electrode provided for each pixel. The anode electrode ANO can be connected to the second electrode SD2 of the thin-film transistor via a contact hole defining a path through the fourth insulating layer IL4.

[0103] The anode electrode (ANO) can have a stacked structure formed by stacking material layers with high work function (such as indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (ZnO) and indium oxide (In2O3)) and reflective material layers (such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca) or mixtures thereof). The layer with high work function can be disposed above the reflective material layer and positioned closer to the light-emitting layer (EML). The anode electrode (ANO) can have a multilayer structure, such as ITO / Mg, ITO / MgF, ITO / Ag, and ITO / Ag / ITO, but is not limited to these.

[0104] A pixel-defining layer (PDL) can be disposed on the anode electrode (ANO). The PDL is disposed on the anode electrode (ANO) and defines an opening through the PDL to expose the anode electrode (ANO). The emitting region (EMA) and the non-emitting region (NEM) can be distinguished or defined by the PDL and the opening of the PDL, respectively.

[0105] Spacers SP can be disposed on the pixel definition layer PDL. Spacers SP can be used to maintain the gap with the structure disposed above it.

[0106] The light-emitting layer (EML) is disposed on the anode electrode (ANO) exposed by the pixel-defining layer (PDL). The EML may include an organic material layer. The organic material layer of the light-emitting layer may include an organic light-emitting layer and may further include a hole injection / transport layer and / or an electron injection / transport layer.

[0107] The light-emitting layer EML can be manufactured by the manufacturing apparatus 10 of the display device according to the embodiment (see Figure 1 The light-emitting layer (EML) can also be formed through the baking process described above, and the temperature rise rate can be adjusted according to the target substrate S (see [reference]). Figure 1 The position of the light-emitting layer (EML) varies, which leads to changes in the thermal, electrical, and / or optical properties of the EML. An organic material layer included in the EML can be deposited by inkjet printing, but this disclosure is not limited thereto.

[0108] In this embodiment, the organic film (organic layer) and the light-emitting layer EML of the display device 20 can be formed by a baking process in the manufacturing process, and the thermal, electrical and / or optical properties of the organic film (organic layer) can be determined according to the target substrate S (see [reference]) during the baking process. Figure 1 The arrangement varies depending on the location.

[0109] The cathode electrode CAT can be disposed on the emissive layer EML. The cathode electrode CAT can be a common electrode extending across all pixels. The anode electrode ANO, the emissive layer EML, and the cathode electrode CAT can constitute an organic light-emitting diode.

[0110] The cathode electrode CAT may include a material layer having a low work function, such as Li, Ca, LiF / Ca, LiF / Al, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF, Ba, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg). The cathode electrode CAT may further include a transparent metal oxide layer disposed on the material layer having a low work function.

[0111] A thin-film encapsulation layer EM, comprising a first inorganic film EM1, a first organic film EM2, and a second inorganic film EM3, is disposed on the cathode electrode CAT. The first inorganic film EM1 and the second inorganic film EM3 can be in contact with each other at their ends. The first organic film EM2 can be sealed by the first inorganic film EM1 and the second inorganic film EM3.

[0112] Each of the first inorganic membrane EM1 and the second inorganic membrane EM3 may include silicon nitride, silicon oxide, silicon oxynitride, etc. The first organic membrane EM2 may include organic insulating materials.

[0113] Touch component 23 may be disposed on display panel 22. Touch component 23 can sense touch input. In an embodiment, as shown, touch component 23 may be provided as a panel or film separate from display panel 22 and may be attached to display panel 22. Alternatively, touch component 23 may be provided inside display panel 22 in the form of a touch layer.

[0114] An anti-reflective component 24 may be disposed on the touch component 23. The anti-reflective component 24 can polarize light passing through it or selectively transmit light with a specific wavelength. The anti-reflective component 24 can be used to reduce the reflection of external light.

[0115] Cover window 25 may be disposed on touch member 23. Cover window 25 is used to cover and protect display panel 22. Cover window 25 may include or be made of transparent material. Cover window 25 may include, for example, glass or plastic.

[0116] The lower component 21 can be disposed below the display panel 22. The lower component 21 can perform a light-blocking function. That is, the lower component 21 can block light from entering the display panel 22 from the outside. In addition to the light-blocking function, the lower component 21 can also perform an impact absorption function.

[0117] In the following text, reference will be made to Figures 9 to 13 Alternative embodiments are described. Figures 9 to 13 The same or similar elements shown above have been used in the description Figures 1 to 8 The same reference numerals are used to denote the embodiments shown in the figures, and any repeated detailed descriptions thereof will be omitted or simplified below.

[0118] Figure 9 This is a schematic view of a manufacturing apparatus according to an alternative embodiment. Figure 10 It is a schematic representation of the basis Figure 9 A view of the heat flow inside the manufacturing apparatus of an embodiment. Figure 11 It is a curve showing the temperature variation based on the position between point A and point B of the first heater.

[0119] Apart from the uneven density of the heating wires HL1_1 and HL2_1 in the first heater 121_1 and the second heater 122_1, Figures 9 to 11 The embodiment of the manufacturing apparatus 10_1 shown in the figure is similar to... Figure 1 The embodiments are basically the same.

[0120] In such an embodiment, the manufacturing apparatus 10_1 may include a heating element 120_1, which includes a first heater 121_1 and a second heater 122_1. In such an embodiment, the first heater 121_1 includes a first heating wire HL1_1, and the second heater 122_1 includes a second heating wire HL2_1.

[0121] The density of the first heating wire HL1_1 within the first heater 121_1 can be non-uniform. The density of the first heating wire HL1_1 can increase in the direction towards the edge of the first heater 121_1 and decrease in the direction towards the center of the first heater 121_1. That is, the distance between adjacent serrated strips of the first heating wire HL1_1 around the edge of the first heater 121_1 can be smaller than the distance between adjacent serrated strips of the first heating wire HL1_1 around the center of the first heater 121_1.

[0122] Therefore, the temperature of the first heater 121_1 can vary depending on its location. That is, the temperature around the edge of the first heater 121_1, where the density of the first heating wire HL1_1 is relatively high, can be higher than the temperature around the center of the first heater 121_1, where the density of the first heating wire HL1_1 is relatively low, but this disclosure is not limited thereto. In such an embodiment, the characteristics of the second heating wire HL2_1 in the second heater 122_1 are substantially the same as those of the first heating wire HL1_1 in the first heater 121_1, and any repeated detailed description thereof will be omitted.

[0123] In this embodiment, the temperature of the first heater 121_1 can gradually decrease from point A near one side surface of the first heater 121_1 to point B near the opposite side surface of the first heater 121_1, and then increase again. The temperature of the first heater 121_1 is highest at points A and B, and the temperature in the region between points A and B can be lower than the temperatures at points A and B. The temperature of the first heater 121_1 can decrease from points A and B towards the center between points A and B.

[0124] In this embodiment, the temperature of the first heater 121_1 increases from its center toward its edge, and the temperature of the second heater 122_1 also increases from its center toward its edge. The temperatures at the edges of both heaters are relatively higher than those at their centers, allowing them to emit a relatively large amount of heat around their edges. Therefore, even with heat exchange occurring around the edges of the first and second heaters through convection and / or radiation between the interior and exterior, a more uniform thermal atmosphere can be formed within the space between the first and second heaters. Thus, in this embodiment, the thermal uniformity and thermal stability of the heat equilibrium area (HEA) can be improved.

[0125] In such an embodiment, even when the size of the first heater 121_1 increases with the size of the target substrate S, the baking process can be performed using a uniform hot atmosphere over the entire area of ​​the target substrate S, and the temperature rise rate of the target substrate S can be adjusted by adjusting the position of the thermal equilibrium zone HEA.

[0126] Figure 12 This is a schematic view of a manufacturing apparatus according to another alternative embodiment.

[0127] In addition to the manufacturing apparatus 10_2 further including a gas supply unit 160_2 for supplying gas into the chamber 110 and a gas discharge unit 170_2 for discharging gas, Figure 12 The embodiment of the display device manufacturing apparatus 10_2 shown in the figure is similar to... Figure 1 The embodiments are basically the same.

[0128] In such an embodiment, the manufacturing apparatus 10_2 for the display device may further include a gas supply unit 160_2 and a gas exhaust unit 170_2 connected to the chamber 110. The gas supply unit 160_2 may be connected to one surface of the chamber 110, and the gas exhaust unit 170_2 may be connected to another surface opposite to that one surface, but this disclosure is not limited thereto.

[0129] The gas supply unit 160_2 can supply gas into the interior of the chamber 110. The gas may include, but is not limited to, nitrogen (N2) or argon (Ar). The gas exhaust unit 170_2 can exhaust the gas that has been supplied into the interior of the chamber 110 by the gas supply unit 160_2 to the outside of the chamber 110.

[0130] Gas can be supplied during the cooling of the target substrate S to accelerate the cooling rate of the target substrate S. The temperature of the gas can be, for example, equal to or less than 0°C or equal to or less than -30°C, but is not limited thereto. Gas can also be supplied as the target substrate S moves from the first heater 121 to the second heater 122. That is, gas can be supplied when the target substrate S is separated from the first heater 121 and / or when the separation distance between the target substrate S and the first heater 121 increases, but this disclosure is not limited thereto.

[0131] In such an embodiment, even when the size of the first heater 121 increases with the size of the target substrate S, the baking process can be performed using a uniform hot atmosphere over the entire area of ​​the target substrate S, and the rate of temperature rise of the target substrate S can be adjusted by adjusting the position of the thermal equilibrium region HEA.

[0132] Figure 13 This is a schematic view of a manufacturing apparatus according to yet another alternative embodiment.

[0133] In addition to the manufacturing apparatus 10_3 including the position measuring unit TS_3 arranged on the height adjustment member 130, Figure 13 The embodiment of the manufacturing apparatus 10_3 for the display device shown in the figure is similar to... Figure 1 The embodiments are basically the same.

[0134] In such an embodiment, the position measuring unit TS_3 can be arranged on the height adjusting member 130 inside the chamber 110. The position measuring unit TS_3 can be arranged on the height adjusting member 130 and its height changes as the height adjusting member 130 moves up and down. In such an embodiment, the position measuring unit TS_3 may include a temperature sensor to measure the temperature inside the chamber 110 even when the target substrate S is not arranged on the height adjusting member 130.

[0135] In this embodiment, even when the size of the first heater 121 increases with the size of the target substrate S, a baking process can be performed using a uniform hot atmosphere over the entire area of ​​the target substrate S, and the temperature rise rate of the target substrate S can be adjusted by regulating the position of the thermal equilibrium region HEA. By using the position measuring unit TS_3 arranged on the height adjustment member 130, the thermal equilibrium region HEA (see figure) can be effectively measured based on the temperatures of the first heater 121 and the second heater 122. Figure 3 The position of ).

[0136] This invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the inventive concept to those skilled in the art.

[0137] Although the invention has been specifically shown and described with reference to embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. An apparatus for manufacturing a display device, the apparatus comprising: Chamber; A heating element is disposed inside the chamber to provide a hot atmosphere inside the chamber, wherein the heating element includes a first heater and a second heater facing each other; A height adjustment component, including an end disposed between the first heater and the second heater; as well as The driving unit drives the end of the height adjusting member to move up or down, such that the end of the height adjusting member is located at one of a first height and a second height, where the first height and the second height are different heights between the first heater and the second heater. Each of the first height and the second height is different from the height of the top surface of the first heater, and different from the height of the bottom surface of the second heater facing the top surface of the first heater. A thermal equilibrium zone, in which the heat emitted by the first heater and the heat emitted by the second heater are in equilibrium with each other, is located between the first heater and the second heater, and the end of the height adjusting member located at one of the first height and the second height is located within the thermal equilibrium zone.

2. The apparatus of claim 1, wherein The target substrate is disposed on the end of the height adjustment member. The target substrate is separated from the first heater and the second heater, and The temperature of the target substrate is different from the temperature of the first heater and the temperature of the second heater.

3. The apparatus of claim 2, wherein the width of the first heater and the width of the second heater are each greater than the width of the target substrate.

4. The apparatus of claim 1, wherein The width of the first heater is equal to the width of the second heater, and The side surfaces of the first heater and the second heater are aligned with each other.

5. The apparatus of claim 1, wherein The temperature of the first heater increases from the center toward the edge, and The temperature of the second heater increases from the center toward the edge.

6. An apparatus for manufacturing a display device, the apparatus comprising: Chamber; The heating element includes a first heater disposed in the lower part of the chamber and a second heater disposed in the upper part of the chamber; A height adjustment member supports a target substrate, wherein at least a portion of the height adjustment member is disposed between the first heater and the second heater; and The drive unit adjusts the height of the target substrate by raising or lowering the height adjustment member to a predetermined height. in The width of the first heater and the width of the second heater are both greater than the width of the target substrate. Each of the side surfaces of the first heater and the second heater protrudes further outward than the side surface of the target substrate, and A thermal equilibrium zone, in which the heat emitted by the first heater and the heat emitted by the second heater are in equilibrium with each other, is located between the first heater and the second heater, and the target substrate is disposed in the thermal equilibrium zone.

7. The apparatus of claim 6, wherein The temperature of the first heater increases from the center toward the edge, and The temperature of the second heater increases from the center toward the edge.

8. The apparatus of claim 6, wherein the area of ​​the first heater and the area of ​​the second heater are each larger than the area of ​​the target substrate.

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