Storage devices and their programming operations

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By dynamically adjusting the programming pulse limit, the problems of over-programming and programming interference caused by programming pause/resume in NAND flash memory devices are solved, improving the performance and reliability of the storage device and ensuring the accuracy of read operations.

CN113853655BActive Publication Date: 2026-05-26YANGTZE MEMORY TECH CO LTD

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Patent Information

Authority / Receiving Office: CN · China
Patent Type: Patents(China)
Current Assignee / Owner: YANGTZE MEMORY TECH CO LTD
Filing Date: 2021-08-27
Publication Date: 2026-05-26

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Abstract

In some aspects, a storage device includes: a storage cell; and peripheral circuitry coupled to the storage cell. The peripheral circuitry is configured to: initiate a programming operation on a selected storage cell from the storage cells; obtain the number of times one or more pauses occur during the programming operation; and determine a programming pulse limit for the programming operation based on the number of pauses.

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