半导体装置

By setting a plate-shaped opposing section between the power supply terminal and the output terminal, the current direction is reversed, thus canceling out the self-inductance. This solves the surge voltage and EMI noise problems of SiC power devices, realizes the design of low self-inductance power modules, and improves the reliability and efficiency of the devices.

CN113871370BActive Publication Date: 2026-07-17ROHM CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ROHM CO LTD
Filing Date
2016-02-04
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

High-speed switching of SiC power devices in existing technologies leads to increased surge voltage, posing risks of device damage and increased EMI noise. Furthermore, the existing wiring has high self-inductance, making it difficult to further improve the efficiency of power modules.

Method used

By employing power terminals and output terminals arranged adjacent to each other in a planar view, and by providing plate-shaped opposing portions in the connection portion and wiring connection portion of the power terminals, the current flows in opposite directions during the transition period, thereby canceling out self-inductance and reducing the self-inductance of the internal wiring.

Benefits of technology

It effectively reduces the self-inductance of the internal wiring of the power module, reduces surge voltage, improves the reliability of the device, reduces EMI noise, and improves the efficiency of the power module.

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Abstract

第一电源端子(P)具有:内部布线连接部(31A)、与内部布线连接部(31A)结合的立起部(31B)、与立起部(31B)结合的倾斜部(31C)、以及与倾斜部(31C)结合的外部布线连接部(31D)。第二电源端子(N)具有:内部布线连接部(32A)、与内部布线连接部(32A)结合的立起部(32B)、与立起部(32B)结合的倾斜部(32C)、以及与倾斜部(32C)结合的外部布线连接部(32D)。第一电源端子(P)的立起部(31B)和第二电源端子(N)的立起部(32B)被配置为空开规定的间隔彼此相向。
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