Three-dimensional phase change memory and its manufacturing method

CN113871414BActive Publication Date: 2026-03-13YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-10-27
Publication Date
2026-03-13

AI Technical Summary

Technical Problem

In existing three-dimensional phase-change memories, the shape and size of the phase-change memory cells depend on the overlap at the intersection of word lines and bit lines, which limits further miniaturization of the device and improvement of storage density, and the manufacturing process is complex and costly.

Method used

By separately fabricating bit lines and word lines, the bit lines and bottom electrode connections are formed through a first wiring process, and the top electrode connections are formed through a second wiring process. The phase change memory cells are independently patterned using single-exposure technology, avoiding the complexity and cost of dual patterning technology.

Benefits of technology

This enables phase-change memory with smaller size and higher storage density, simplifies process steps, reduces costs, and reduces parasitic effects and programming current requirements.

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Abstract

This invention provides a three-dimensional phase-change memory (PCM) and its manufacturing method. It uses appropriate wiring processes to manufacture the word lines and bit lines required for each layer of PCM cells. The PCM cells are manufactured after the first wiring is formed and before the second wiring is formed. The word lines and bit lines are electrically connected to corresponding contacts and electrodes of the PCM cells. This allows the shape and size of the PCM cells to no longer completely depend on the overlap at the intersection of word and bit lines, facilitating smaller device sizes and higher storage density. It also mitigates parasitic effects introduced by word and bit lines and reduces the programming current and power requirements of the PCM. Furthermore, when using separate single-exposure techniques to fabricate the bit lines, PCM cells, and word lines, the complexity and cost associated with using dual patterning techniques in existing technologies for fabricating word and bit lines are avoided.
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Citation Information

Patent Citations

  • Phase change memory with diode unit selective connection and its making method

    CN101106151A

  • Three-dimensional stackable phase change storage array device and preparation method thereof

    CN105655368A

  • A novel self-aligned semi-tessellated contact scheme for reducing cost for 3D PCM

    CN112449724A

  • Polysilicon plug bipolar transistor for phase change memory

    US20100176362A1