III族氮化物晶体的制造方法
By using nitrogen-containing oxidizing gas to react with droplets during the manufacturing process of group III nitride crystals, the polycrystalline problem was solved, enabling the manufacture of high-quality and rapidly growing group III nitride crystals.
CN113882020BActive Publication Date: 2026-07-17OSAKA UNIVERSITY +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- OSAKA UNIVERSITY
- Filing Date
- 2021-06-30
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing technologies for manufacturing group III nitride crystals are prone to droplet formation leading to polycrystalline formation, and the growth rate is slow, making it difficult to uniformly produce high-quality crystals within the growth plane.
Method used
Nitrogen-containing oxidizing gases such as NO, NO2, N2O, and N2O4 are used to react with group III element droplets to suppress polycrystalline formation, and the growth rate is increased by controlling the gas partial pressure and supply time.
Benefits of technology
It effectively suppressed the polycrystallineization of group III nitride crystals, improved the growth rate, and ensured the quality and uniformity of the crystals.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN113882020B_ABST
Abstract
本发明提供一种多晶化被抑制并且生长速度快的III族氮化物晶体的制造方法。III族氮化物晶体的制造方法包括：准备种基板的工序、生成III族元素氧化物气体的工序、供给III族元素氧化物气体的工序、供给含氮元素气体的工序、供给含氮元素氧化性气体的工序、以及使III族氮化物晶体在种基板上生长的工序，含氮元素氧化性气体包含选自NO气体、NO2气体、N2O气体和N2O4气体中的至少一种。
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