Organic device and apparatus comprising the same

Abstract

This invention relates to organic devices and apparatuses including such organic devices. An organic device is provided, comprising: a first electrode and a second electrode on a main surface of a substrate; an insulating layer including a first portion disposed between the first electrode and the second electrode and a second portion disposed to cover the outer periphery of the first electrode; and an organic layer. The upper surface of the insulating layer between at least one of a third portion of the first electrode not covered by the insulating layer and the top of the second portion includes an inclined portion at an angle of 50° to 180° relative to the main surface. The upper end of the inclined portion is further away from the main surface than the upper surface of the charge-generating layer of the organic layer and closer to the main surface than the upper surface of the organic layer.

Description

Technical Field

[0001] This invention relates to organic devices, display devices, photoelectric conversion devices, electronic devices, lighting devices, lighting fixtures for mobile devices, and mobile devices. Background Technology

[0002] Organic devices, including photoelectric conversion elements or light-emitting elements comprising an organic layer for emitting light or performing photoelectric conversion, have attracted attention. Japanese Patent Application Publication No. 2014-123527 discloses a light-emitting device comprising a series element formed by stacking multiple light-emitting units as an organic layer. While series elements are advantageous in improving luminous efficiency, crosstalk tends to occur easily in series elements, where crosstalk is the phenomenon of current leakage between adjacent elements via a highly conductive intermediate layer. Japanese Patent Application Publication No. 2014-123527 discloses suppressing crosstalk by recessing the partition walls located between the lower electrodes. Summary of the Invention

[0003] Further efforts are needed to suppress leakage between components in order to improve the resolution and efficiency of organic devices.

[0004] Some embodiments of the present invention provide an advantageous technique for suppressing leakage between components in organic devices.

[0005] According to some embodiments, an organic device is provided, comprising: a substrate; a first electrode and a second electrode disposed on a main surface of the substrate; an insulating layer including a first portion disposed between the first electrode and the second electrode and a second portion disposed to cover the outer periphery of the first electrode; an organic layer disposed on the first electrode, the second electrode and the insulating layer; and a third electrode disposed on the organic layer, wherein the organic layer includes a plurality of functional layers and a charge generating layer disposed between the plurality of functional layers; the upper surface of the insulating layer between at least one of the third portion of the first electrode not covered by the insulating layer and the top of the second portion furthest from the main surface includes an inclined portion whose angle with respect to a plane parallel to the main surface is greater than 50° and less than 180°, and the upper end of the inclined portion is farther from the main surface than the upper surface of the charge generating layer on at least one of the first portion and the third portion, and closer to the main surface than the upper surface of the organic layer on at least one of the first portion and the third portion.

[0006] Further features of the invention will become apparent from the following description of exemplary embodiments (with reference to the accompanying drawings). Attached Figure Description

[0007] Figure 1 A cross-sectional view illustrating an example of the configuration of an organic device according to one embodiment;

[0008] Figure 2 To show Figure 1 A plan view of an example configuration of organic devices;

[0009] Figure 3 To show Figure 1 Enlarged cross-sectional view of an example of an organic device configuration;

[0010] Figure 4 For illustrative purposes Figure 1 A diagram showing the leakage current between components of an organic device;

[0011] Figure 5 To show the chromaticity of the red pixel and Figure 1 A diagram showing the relationship between the structures of organic devices;

[0012] Figure 6 To show when the simulation Figure 1 A diagram showing the configuration of components during the deposition of the organic layer in an organic device;

[0013] Figure 7 To show Figure 6 A chart of the simulation results;

[0014] Figure 8 To show Figure 1 Diagrams of variations of organic devices;

[0015] Figure 9 To show Figure 1 A table showing the layer thickness ratios of organic layers in organic devices;

[0016] Figure 10 To show Figure 1 A table showing the evaluation results of Example 1 and Comparative Examples 1 and 2 of the organic device;

[0017] Figure 11 A cross-sectional view illustrating an example configuration of the light-emitting device according to the embodiment;

[0018] Figure 12 A diagram illustrating an example of a display device using a light-emitting device according to an embodiment;

[0019] Figure 13 A diagram illustrating an example of a photoelectric conversion device using a light-emitting device according to an embodiment;

[0020] Figure 14 A diagram illustrating an example of an electronic device using a light-emitting device according to an embodiment;

[0021] Figure 15A and Figure 15B Each figure illustrates an example of a display device using a light-emitting device according to an embodiment;

[0022] Figure 16 A diagram illustrating an example of a lighting device using a light-emitting device according to an embodiment; and

[0023] Figure 17 A diagram illustrating an example of a mobile device using a light-emitting device according to an embodiment. Detailed Implementation

[0024] The embodiments will now be described in detail with reference to the accompanying drawings. Note that the following embodiments are not intended to limit the scope of the claimed invention. Several features are described in the embodiments, but this does not limit the invention to requiring all of these features; multiple such features may be suitably combined. Furthermore, in the drawings, the same reference numerals are given the same or similar configurations, and redundant descriptions are omitted.

[0025] Reference Figures 1 to 17 An organic device according to one embodiment of the present invention is described. Figure 1 A cross-sectional view illustrating an example of the configuration of the organic device 100 according to this embodiment. Figure 2 A bird's-eye view of the upper surface of a portion of the organic device 100. Along Figure 2 The cross section obtained from line A–A' corresponds to Figure 1 An example is shown in which a single pixel is formed by three light-emitting elements 10. Although this embodiment shows an example of pixels arranged in a triangle, the invention is not limited thereto. Pixels can be configured in a strip or square arrangement.

[0026] In this embodiment, the organic device 100 can be an organic light-emitting device as described below. In such cases, the organic layer will include, for example, a light-emitting layer. Furthermore, the organic device 100 according to this embodiment is not limited to an organic light-emitting device. The organic device 100 can also be a photoelectric conversion device. In such cases, the organic layer will include, for example, a photoelectric conversion layer.

[0027] The organic device 100 includes a substrate 1 and a plurality of light-emitting elements 10 disposed on the substrate 1. Figure 1 The diagram shows three light-emitting elements 10R, 10G, and 10B, among a plurality of light-emitting elements 10 included in the organic device 100. The "R" in light-emitting element 10R indicates that the element emits red light. Similarly, the "G" in light-emitting element 10G indicates that the element emits green light, and the "B" in light-emitting element 10B indicates that the element emits blue light. In this specification, when a specific light-emitting element is referred to among the plurality of light-emitting elements 10, the suffix "R" for light-emitting element 10R will be added after the reference numeral. Furthermore, when referring to any one of the plurality of light-emitting elements 10, it will be simply referred to as light-emitting element "10". A similar approach is used for other components.

[0028] The organic device 100 includes a substrate 1, a plurality of lower electrodes 2 disposed on a main surface 12 of the substrate 1, each lower electrode 2 having a portion 3a disposed between the lower electrodes 2 and a portion 3b disposed to cover the outer periphery of the corresponding lower electrode 2, and an organic layer 4 disposed on the plurality of lower electrodes 2 and the insulating layer 3. Furthermore, in the organic device 100, an upper electrode 5 is disposed on the organic layer 4 to cover the organic layer 4. Depending on the light-emitting element 10, the lower electrodes 2 are separated by the insulating layer 3.

[0029] The case where the organic device 100 is a light-emitting device will be described in detail here. In this embodiment, the organic device 100 is a top light-emitting device that extracts light from the upper electrode 5. Therefore, the organic layer 4 includes a light-emitting layer as a functional layer. In addition, the organic device 100 may include a protective layer 6 configured to cover the upper electrode 5 and a plurality of color filters 7 configured corresponding to the plurality of light-emitting elements 10 on the protective layer 6. Furthermore, the organic device 100 may also include a planarization layer 8 between the protective layer 6 and the color filters 7. The case where the organic device 100 is a light-emitting device will be described here. However, in the case where the organic device 100 is a photoelectric conversion device, the organic layer 4 will include a photoelectric conversion layer as a functional layer.

[0030] In this embodiment, the organic layer 4 emits white light, and color filters 7R, 7G, and 7B separate the white light emitted from the organic layer 4 into R, G, and B beams, respectively. The color filters can also form a color conversion layer that absorbs the light emitted from the organic layer 4 and converts the absorbed light into other colors.

[0031] In this implementation scheme, the terms "upper" and "lower" indicate Figure 1 The vertical direction of the lower electrode 2. Therefore, the surface of the lower electrode 2 on the substrate 1 side is referred to as the "lower surface" of the lower electrode 2, and the surface on the organic layer 4 side of the lower electrode 2 is referred to as the "upper surface". Here, the lower surface of the lower electrode 2 refers to the surface that contacts the interlayer insulating layer of the uppermost surface of the substrate 1. For example, in the case where a plug or the like for connecting to another wiring pattern is connected to the lower surface of the lower electrode 2, the substantially flat portion other than the connection portion will be the lower surface of the lower electrode 2.

[0032] Despite Figure 1Although not shown, substrate 1 may include an interlayer insulating layer, plugs, wiring, and drive circuitry including transistors connected to the lower electrode 2, and its uppermost surface (the surface in contact with the lower electrode) includes an interlayer insulating layer. The interlayer insulating layer may be made of inorganic compounds such as silicon oxide, silicon nitride, or silicon oxynitride. It may also be made of organic compounds such as polyimide or polyacrylic acid compounds. Since organic layers 4, such as functional layers, deteriorate due to moisture, the interlayer insulating layer may be made of inorganic materials from the viewpoint of preventing moisture ingress. The interlayer insulating layer may also be referred to as a planarization layer for the purpose of reducing the unevenness of the surface on which the lower electrode 2 is formed.

[0033] For each lower electrode 2, a metallic material with a reflectivity of 80% or more relative to the emission wavelength from the organic layer 4 can be used. For example, metals such as Al or Ag, or alloys obtained by doping such metals with Si, Cu, Ni, or Nd, can be used for each lower electrode 2. Here, the emission wavelength refers to the spectral range of light emitted from the organic layer 4. If the lower electrode 2 has a high reflectivity relative to the emission wavelength from the organic layer 4, the lower electrode 2 can have a multilayer structure including a barrier layer. Metals such as Ti, W, Mo, or Au, or alloys of such metals, can be used as the material for the barrier layer. The barrier layer can be a metallic layer disposed on the upper surface of the lower electrode 2.

[0034] The insulating layer 3 can cover the outer periphery of each lower electrode 2 and is disposed between the lower electrode 2 and the organic layer 4. Additionally, each lower electrode 2 may include a portion covered by the insulating layer 3 (a first region) and a portion not covered by the insulating layer 3 but covered by the organic layer 4 (a second region). In this embodiment, the second region can be said to be in contact with the organic layer 41 of the organic layer 4 (see reference). Figure 3 (As described below). Each second region overlaps with the corresponding opening of the insulating layer 3 in an orthogonal projection relative to the upper surface of the lower electrode 2. The lower electrode 2 becomes the light-emitting region of each light-emitting element 10.

[0035] That is, the top view shape of the upper surface of the light-emitting area of ​​each light-emitting element 10 can be a shape defined by the corresponding opening formed in the insulating layer 3. The insulating layer 3 is sufficient to have the functions of electrically separating the lower electrode 2 under each light-emitting element 10 and defining the light-emitting area of ​​each light-emitting element 10, and is not limited to... Figure 1 and Figure 2 The shape shown.

[0036] The insulating layer 3 can be formed, for example, by chemical vapor deposition (CVD) or physical vapor deposition (PVD). The insulating layer 3 can be made of, for example, silicon nitride (SiN), silicon oxynitride (SiON), or silicon oxide. The insulating layer 3 can be a multilayer film made of silicon nitride, silicon oxynitride, or silicon oxide.

[0037] The tilt angle of the upper surface of each portion 3b of the insulating layer 3 can be controlled by conditions such as anisotropic etching or isotropic etching. The tilt angle of the upper surface of each portion 3b of the insulating layer 3 can also be controlled by controlling the tilt angle of the layer directly below the insulating layer 3. For example, the tilt angle of the insulating layer 3 can be adjusted by forming a recess including a tilted side surface on the interlayer insulating layer on the uppermost surface of the substrate 1 and adjusting the tilt angle. A raised or recessed pattern can also be formed on the upper surface of the insulating layer 3 by performing processes such as etching, or by increasing the number of stacked layers. The shape of the insulating layer 3 will be determined with reference to… Figure 3 Described later.

[0038] An organic layer 4 is disposed between the upper electrode 5, the lower electrode 2, and the insulating layer 3. The organic layer 4 is continuously formed on the substrate 1 and can be shared by multiple light-emitting elements 10. That is, multiple light-emitting elements 10 can share one organic layer 4. The organic layer 4 can be integrally formed on the entire surface of the display area used to display images on the organic device 100, which serves as a light-emitting device.

[0039] The organic layer 4 may include a hole transport layer, a light-emitting layer, and an electron transport layer. Suitable materials can be selected for the organic layer 4 based on luminous efficiency, driving lifetime, and optical interference. The hole transport layer can function as an electron blocking layer or a hole injection layer, and may also have a multilayer structure including a hole injection layer, a hole transport layer, and an electron blocking layer. The light-emitting layer, as a functional layer, may have a multilayer structure including light-emitting layers emitting different colors, and may also be a hybrid layer containing dopants emitting different colors. The electron transport layer can function as a hole blocking layer or an electron injection layer, and may also have a multilayer structure including an electron injection layer, an electron transport layer, and a hole blocking layer.

[0040] Additionally, the organic layer 4 may also include an intermediate layer disposed between the multiple functional layers (light-emitting layers) and the multiple functional layers. The organic device 100 may also be a light-emitting device having a tandem structure in which the intermediate layer is a charge-generating layer. In the tandem structure, a charge-transporting layer, such as a hole transport layer or an electron transport layer, may be formed between the charge-generating layer and the light-emitting layer.

[0041] The charge-generating layer is a layer containing an electron-donating material and an electron-accepting material, and generates charge. The electron-donating material is a material that supplies electrons, and the electron-accepting material is a material that accepts electrons. Since positive and negative charges are generated in the charge-generating layer, positive or negative charges can be supplied to layers above and below it. The electron-donating material can be, for example, an alkali metal such as lithium or cesium. Alternatively, the electron-donating material can be, for example, lithium fluoride, lithium complexes, cesium carbonate, or cesium complexes. In this case, electron-donating properties can be exhibited by including reducible raw materials such as aluminum, magnesium, or calcium along with the electron-donating material. The electron-accepting material can be, for example, an inorganic compound such as molybdenum oxide, or an organic compound such as [bispyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarboxynitrile]. The electron-accepting material and the electron-donating material can be mixed or stacked.

[0042] The upper electrode 5 is disposed on the organic layer 4. The upper electrode 5 is continuously formed on the substrate 1 and can be shared by multiple light-emitting elements 10. The upper electrode 5 can be integrally formed over the entire display area of ​​the organic device 100, which is used to display an image, in a manner similar to that of the organic layer 4. The upper electrode 5 is a light-transmitting electrode for transmitting light emitted by the light-emitting layer of the organic layer 4. The upper electrode 5 can also be an electrode that transmits at least a portion of the light beam reaching the lower surface of the upper electrode 5. The upper electrode 5 can be used as a semi-transmissive reflective layer (i.e., a layer with semi-transmissive reflectivity) that transmits some of the light beam but reflects the remaining light beam.

[0043] The upper electrode 5 can be made of metals such as magnesium or silver, alloys containing magnesium or silver as the main component, or alloys containing alkali metals or alkaline earth metals. Oxide conductors can also be used as the upper electrode 5. The upper electrode 5 can have a multilayer structure, as long as it has appropriate transmittance.

[0044] The protective layer 6 can be made of materials with low permeability to external oxygen and moisture, such as silicon nitride, silicon oxynitride, aluminum oxide, silicon oxide, or titanium oxide. Silicon nitride and silicon oxynitride can be formed using, for example, CVD. On the other hand, aluminum oxide, silicon oxide, and titanium oxide can be formed using atomic layer deposition (ALD).

[0045] The combination of constituent materials and manufacturing methods of protective layer 6 is not limited to those listed above, and can be appropriately selected considering factors such as the thickness of the layer to be formed and the time required for the layer to form. Protective layer 6 can have a single-layer or multi-layer structure, as long as it transmits light transmitted through the upper electrode 5 and has sufficient moisture-blocking properties.

[0046] Each color filter 7 can be formed on the protective layer 6. Figure 1Like the color filter 7G shown, the color filters 7R can contact each other without gaps. Furthermore, color filters of different colors can be arranged to overlap each other.

[0047] In this embodiment, a planarization layer 8 is formed between the protective layer 6 and the color filter 7. The planarization layer 8 can be made of organic compounds such as polyimide or polyacrylic acid compounds. It can also have a multilayer structure formed by using inorganic and organic compounds.

[0048] Next, we will refer to Figure 3 Describe the relationship between the insulating layer 3 and the organic layer 4 of the organic device according to this embodiment. Figure 3 for Figure 1 An enlarged view of region B, indicated by the dashed line. Figure 3 An insulating layer 3 is shown between two lower electrodes 2 (first electrode and second electrode) arranged adjacent to each other among a plurality of lower electrodes 2.

[0049] exist Figure 3 In the configuration shown, the upper surface of the lower electrode 2 includes a portion 21 not covered by the insulating layer 3, and a portion 3a of the insulating layer 3 includes a portion 33 disposed between the two lower electrodes 2. Each portion 21 and 33 can be a portion with an angle of 0° relative to a plane parallel to the main surface 12. That is, portions 21 and 33 can be portions substantially parallel to the main surface 12. The portion 33 of the insulating layer 3 can be as follows: Figure 3 The flat portion is shown. When the interval between two adjacent lower electrodes 2 is small, the portion 33 of the insulating layer 3 can also be a portion in which the inclination changes from downward to upward.

[0050] Here, the portion 3b of the insulating layer 3 that is furthest from the main surface 12 is referred to as the top 315. For example... Figure 3 As shown, the top 315 can be flat, or it can be the part where the slope changes from upward to downward.

[0051] Next, the upper surface 31 of the insulating layer 3 between the top 315 and the upper surface 21 of the lower electrode 2 will be described. The upper surface 31 of the insulating layer 3 between the top 315 and the upper surface 21 includes an inclined portion 312 with an angle greater than 50° and less than 180° relative to a plane parallel to the main surface 12 of the substrate 1. This inclined portion 312 may also have an angle greater than 50° and less than 90° relative to a plane parallel to the main surface 12 of the substrate 1. The angle of the inclined portion 312 is as follows... Figure 3The angle shown can be constant, or it can vary continuously or in a stepwise manner. The inclined portion 312 is the portion of the upper surface 31 whose angle relative to the plane parallel to the main surface 12 of the substrate 1 falls within the range of greater than 50° and less than 180°. That is, the inclined portion 312 can have an inverted conical shape relative to the portion 21 of the upper surface of the lower electrode 2.

[0052] The organic layer 4 has the tandem structure described above. That is, the organic layer 4 includes a plurality of functional layers and a charge generation layer 42 disposed between the plurality of functional layers. The organic layer 4 includes an organic layer 41 comprising a light-emitting layer as a functional layer disposed on a side closer to the substrate 1 than the charge generation layer 42, and an organic layer 43 comprising a light-emitting layer as a functional layer disposed on a side further away from the substrate 1 than the charge generation layer 42.

[0053] In this embodiment, the distance from the main surface 12 of the substrate 1 to the upper surface H of the charge generation layer 42 and the distance from the main surface 12 to the upper end F of the inclined portion 312 of the upper surface 31 of the insulating layer 3 satisfy the following relationship.

[0054] The upper surface H of the charge generating layer 42 is less than the upper end F of the inclined portion 312 of the insulating layer 3...(1)

[0055] That is, compared with the upper surface H of the charge generation layer 42 on the upper surface portion 21 of the lower electrode 2, the upper end F of the inclined portion 312 of the upper surface 31 of the insulating layer 3 is further away from the main surface 12 of the substrate 1.

[0056] As a result, the film thickness of the charge generation layer 42 along the inclined portion 312 can be reduced. Since the thinner portion of the charge generation layer 42 will have high resistance, leakage current that may occur between the light-emitting elements 10 (between the lower electrodes 2) due to charge conduction from the conductive charge generation layer 42 can be suppressed.

[0057] In addition, in this embodiment, the distance from the main surface 12 of the substrate 1 to the upper surface E of the organic layer 4 and the distance from the main surface 12 of the substrate 1 to the upper end F of the inclined portion 312 of the insulating layer 3 satisfy the following relationship.

[0058] The upper surface E of the organic layer 4 > the upper end F of the inclined portion 312 of the insulating layer 3...(2)

[0059] That is, compared with the upper surface E of the organic layer 4 on the upper surface portion 21 of the lower electrode 2, the upper end F of the inclined portion 312 of the upper surface 31 of the insulating layer 3 is closer to the main surface 12 of the substrate 1.

[0060] Therefore, since the inclined portion 312 is embedded in the organic layer 4, the film thickness of the organic layer 4 along the inclined portion 312 will hardly decrease. As a result, leakage current between the upper electrode 5 and each of the lower electrodes 2 can be suppressed.

[0061] The organic layer 4 may include multiple charge-generating layers containing charge-generating layers 42. In this case, the upper end F of the inclined portion 312 of the upper surface 31 of the insulating layer 3 can be further away from the main surface 12 of the substrate 1 than the upper surface of any of the multiple charge-generating layers containing charge-generating layers 42 on the portion 21 of the upper surface of the lower electrode 2. As a result, the leakage suppression effect between adjacent light-emitting elements 10 (between the lower electrodes 2) can be increased.

[0062] like Figure 3 As shown, the organic layer 43 includes a charge transport layer 431 and an organic layer 432. The charge transport layer 431 is disposed between the charge generation layer 42 and the upper electrode 5. The organic layer 432 is in contact with the upper surface of the charge transport layer 431 and includes a light-emitting layer. As a result, the charge generated in the charge generation layer 42 will flow efficiently to the light-emitting layer disposed in the organic layer 432 via the charge transport layer 431, thereby achieving high luminous efficiency.

[0063] At this time, Figure 3 In the configuration shown, the distance from the main surface of the substrate 1 to the upper surface G of the charge transport layer 431 that contacts the upper surface of the charge generation layer 42, and the distance from the main surface 12 of the substrate 1 to the upper end F of the inclined portion 312 of the insulating layer 3 can satisfy the following relationship.

[0064] The upper surface G of the charge transport layer 431 is less than the upper end F of the inclined portion 312 of the insulating layer 3...(3)

[0065] That is, compared with the upper surface G of the charge transport layer 431 on the upper surface portion 21 of the lower electrode 2, the upper end F of the inclined portion 312 of the upper surface 31 of the insulating layer 3 can be further away from the main surface 12 of the substrate 1.

[0066] This reduces the film thickness of the charge transport layer 431 along the inclined portion 312, thus suppressing leakage current between the light-emitting elements 10 (lower electrode 2) when the charge generated by the charge generation layer 42 flows in the charge transport layer 431. Since the charge transport layer 431 typically has high charge transport capacity along the direction between the light-emitting elements 10 (between the lower electrodes 2), the leakage suppression effect between the light-emitting elements 10 (between the lower electrodes 2) will be improved by positioning the upper end F of the inclined portion 312 at a position higher than the upper surface G of the charge transport layer 431.

[0067] The charge transport layer 431 can be a hole transport layer. Since leakage current between the light-emitting elements 10 (lower electrode 2) will flow more easily if the hole transport layer has a higher mobility than the electron transport layer, the effectiveness of the embodiment can be further improved.

[0068] Furthermore, the upper surface 31 of the insulating layer 3 between the top 315 of the insulating layer 3 and the portion 21 of the lower electrode 2 may further include a gently inclined portion 313 whose angle with respect to the plane parallel to the main surface 12 of the substrate 1 is 0° or more and 50° or less. Figure 3 As shown, the gently sloping portion 313 can be disposed between the top 315 and the sloping portion 312. This prevents the formation of a portion where the film thickness of the organic layer 4 decreases along the upper surface 31 of the insulating layer 3. As a result, leakage current generated between the upper electrode 5 and the lower electrode 2 can be suppressed. The sloping portion 312 and the gently sloping portion 313 can be formed, for example, by combining isotropic etching and anisotropic etching after depositing the material film to be formed as the insulating layer 3.

[0069] The position of the upper end F of the inclined portion 312 of the upper surface 31 between the top 315 of the insulating layer 3 and the portion 21 of the lower electrode 2 has been described above. However, the invention is not limited thereto, and a similar relationship may exist for the upper surface 32 between the top 315 of the insulating layer 3 and the portion 33 of the insulating layer 3. That is, the upper surfaces 31 and 32 of the insulating layer 3, which are at least one of the portion 33 and the portion 21 not covered by the insulating layer 3 of the lower electrode 2, and the top 315 of the insulating layer 3 furthest from the main surface 12, may each include an inclined portion 312 and an inclined portion 322, respectively, whose angle with respect to the plane parallel to the main surface 12 is greater than 50° and less than 180°. Alternatively, the angle with respect to the plane parallel to the main surface 12 of each inclined portion 312 and 322 may be greater than 50° and less than 90°.

[0070] More specifically, the upper surface 32 of the insulating layer 3 between the top 315 and the portion 33 includes an inclined portion 322 whose angle with respect to the plane parallel to the main surface 12 of the substrate 1 is greater than 50° and less than 180°. In this case, compared to the upper surface of the charge-generating layer 42 of the organic layer 4 on the portion 33 of the insulating layer 3, the upper end of the inclined portion 322 of the upper surface 32 of the insulating layer 3 can be further away from the main surface 12 of the substrate 1. Compared to the upper surface of the organic layer 4 on the portion 33 of the insulating layer 3, the upper end of the inclined portion 322 of the upper surface 32 of the insulating layer 3 can also be closer to the main surface 12 of the substrate 1. That is, the relationships of the above inequalities (1) and (2) can be satisfied. Furthermore, compared to the upper surface of the charge-transporting layer 431 on the portion 33 of the insulating layer 3, the upper end of the inclined portion 322 of the upper surface 32 of the insulating layer 3 can be further away from the main surface 12 of the substrate 1. That is, the relationship of the above inequality (3) can be satisfied.

[0071] Furthermore, the upper surface 32 of the insulating layer 3 may further include a gently inclined portion 321 whose angle relative to the plane parallel to the main surface 12 of the substrate 1 is 0° or more and 50° or less. The angle of the gently inclined portion 321 may be constant, continuously variable, or stepped. The inclined portion 312 is the portion of the upper surface 31 whose angle relative to the plane parallel to the main surface 12 of the substrate 1 falls within the range of 0° or more and 50° or less. In this case, as... Figure 3 As shown, the gently tilted portion 321 can be disposed between the top 315 and the tilted portion 322. In addition, the portion of the gently tilted portion 321 that is furthest from the main surface 12 of the substrate can be referred to as the top 315.

[0072] Furthermore, although the upper part 21 of the lower electrode 2 and the part 33 of the insulating layer 3 are in Figure 3 The portions are drawn at approximately the same height, but the invention is not limited thereto. For example, portion 21 may be positioned further away from the main surface 12 of substrate 1 than portion 33.

[0073] Next, we will refer to Figure 4 and Figure 5 A more efficient configuration of this implementation scheme is described in detail. Figure 4 This is a schematic diagram of an organic device based on a comparative example in which a light-emitting element 10R including a red color filter 7R and a light-emitting element 10G including a green color filter 7G are already formed. (Compared to...) Figures 1 to 3 The difference in the organic device 100 of the embodiment shown is that the insulating layer 3 does not cover the outer periphery of each lower electrode 2 and is only disposed between the lower electrodes 2.

[0074] exist Figure 4 In the diagram, an equivalent circuit related to the leakage current of the light-emitting element 10R is superimposed and shown. Figure 4The equivalent circuit represents the resistance of the organic layer 4 and does not contain any embedded electronic circuitry. An equivalent circuit of the light-emitting element 10G is also superimposed and shown to describe the leakage current between the lower electrodes 2.

[0075] Let C be the thickness of the organic layer 4 on each of the portions 21R and 21G of the lower electrodes 2R and 2G, and let D be the distance between the portion of the lower electrode 2R not covered by the insulating layer 3 and the portion of the lower electrode 2G not covered by the insulating layer 3. Additionally, let r be the resistance per unit area of ​​the organic layer 4 in the vertical direction (thickness direction) relative to the main surface 12 of the substrate 1.

[0076] When the ratio of distance D to the thickness C of organic layer 4 (hereinafter also referred to as the D / C ratio) is less than 50 (D / C < 50), the aforementioned suppression effect on leakage current generated by allowing current to flow in the lower electrode 2R (lighting up) can be obtained. The lower the D / C ratio of distance D to the thickness C of organic layer 4, the shorter the distance between the light-emitting areas of each light-emitting element 10 in contact with the lower electrode 2, relative to the thickness C of organic layer 4. That is, as the value of D / C ratio decreases, the organic device will have a higher resolution arrangement in which the light-emitting elements 10 are arranged in increasingly finer configurations, and the leakage current between the lower electrodes 2 will become more problematic. The proof of this will be described below.

[0077] According to Figure 4 In the comparative example of the organic device, r(D / C) is the resistance per unit area of ​​the organic layer 4 in a direction parallel to the lower surface of the lower electrode 2. Here, let I... R For the current flowing in the light-emitting element 10R and I G This is due to the current I flowing in the light-emitting element 10R. R The following relationship is established regarding the leakage current generated in the light-emitting element 10G.

[0078] I G / I R =1 / (1+D / C)...(4)

[0079] According to equation (4), the current I flowing in the light-emitting element 10R is... R and the leakage current I generated in the light-emitting element 10G G The organic layer 4 has a proportional relationship where the thickness C and distance D are coefficients. That is, even if light is emitted only from the red light-emitting element 10R (arrow 9R), current will flow to the green light-emitting element 10G (arrow 9G) and light will be emitted from the green light-emitting element. Furthermore, the leakage current I in this case... G It depends on the D / C ratio.

[0080] When two light-emitting elements emit light with the same current, in which S RThe emission spectrum of the red light-emitting element 10R is only and S G Considering only the emission spectrum of the green light-emitting element 10G, the emission spectrum S of the lower electrode 2 is calculated. R+G as follows.

[0081] S R+G =S R +S G (I G / I R ...(5)

[0082] Figure 5 This shows the calculation of the emission spectrum S R+G A graph obtained by using chromaticity coordinates in the CIExy space and setting the ordinate and x-axis to represent the x-coordinate value and the D / C ratio, respectively. Figure 5 In the diagram, the change in the x-coordinate value indicates that even if the intention is only to emit red light, green light is also being emitted. That is, in Figure 5 In the diagram, a smaller x-coordinate value indicates leakage current flowing to the light-emitting element 10G, which is positioned adjacent to the light-emitting element 10R. For example... Figure 5 As shown, when the D / C ratio is 50 or higher, the x-coordinate value hardly changes. That is, even if the insulating layer 3 does not cover the outer periphery of each lower electrode 2 and leakage current is easily generated between the lower electrodes 2, the generation of leakage current between the lower electrodes 2 will not be a problem if the D / C ratio is 50 or higher.

[0083] On the other hand, when the D / C ratio is less than 50, the x-coordinate value decreases significantly and the color purity of the red light becomes noticeably reduced. Clearly, the leakage current generated between the lower electrodes 2 affects the color purity. That is, because the light-emitting element 10 has a high density when the D / C ratio is less than 50, the leakage current between the lower electrodes 2 has a significant impact on the organic device 100. Therefore, as... Figure 3 As shown, when the D / C ratio is less than 50, the leakage current suppression effect between the lower electrodes 2 becomes particularly high in the structure including the inclined portions 312 and 322 of the upper surfaces 31 and 32 of the insulating layer 3.

[0084] The structure considering optical interference in the light-emitting element 10 will be described next. According to this embodiment, the optical path length between the upper electrode 5 and each of the lower electrodes 2 of the organic device 100 can have an enhanced interference structure. This enhanced interference structure can also be referred to as a resonant structure.

[0085] By forming multiple layers contained in the organic layer 4 to satisfy optical interference conditions for enhancing light in each light-emitting element 10, optical interference can be used to enhance the light extracted from the organic device 100. Setting the optical conditions for enhancing light extracted in the frontal direction will make it so that in the frontal direction ( Figure 1 and Figure 3 It emits light more effectively in the upward direction (of the light). Furthermore, it is known that the full width at half maximum (FWHM) of the emission spectrum of light enhanced by optical interference becomes smaller than that of the emission spectrum before interference. That is, color purity can be improved.

[0086] When designing multiple layers for light with wavelength λ, enhanced interference can be achieved by adjusting the distance d0 from the emitting position of the emitting layer to the reflecting surface of the reflective material (lower electrode 2) to d0 = iλ / 4n0 (i = 1, 3, 5, ...). As a result, the frontal component will increase in the distribution of light emitted at wavelength λ, thereby improving the brightness of the front side. Note that n0 is the refractive index of the layer from the emitting position to the reflecting surface at wavelength λ.

[0087] make Let Lr be the sum of the phase shifts when light of wavelength λ is reflected by the reflecting surface. The optical path length Lr between the light emission position and the reflecting surface of the lower electrode 2 is as follows.

[0088]

[0089] Note that the optical path length L is the sum of the products of the refractive index nj of each layer in organic layer 4 and the thickness dj of each layer. That is, L can be expressed as ∑nj×dj and n0×d0. Note that... It is a negative value. In equation (6), m is an integer greater than or equal to 0. Note that when When m = 0, then L = λ / 4; when m = 1, then L = 3λ / 4. Hereinafter, the condition m = 0 in equation (6) will be called the λ / 4 interference condition, and the condition m = 1 in equation (6) will be called the 3λ / 4 interference condition.

[0090] make Let Ls be the sum of the phase shifts when light of wavelength λ is reflected by the reflecting surface. Then the optical path length Ls between the emission position and the reflecting surface of the light extraction electrode (upper electrode 5) is as follows.

[0091]

[0092] Where m' is an integer greater than or equal to 0.

[0093] Therefore, the full-layer interference L is as follows.

[0094]

[0095] in The sum of the phase shifts of light with wavelength λ as it is reflected by the reflecting electrode and the light extraction electrode.

[0096] In this case, considering characteristics such as the viewing angle, which have a trade-off with the light extraction efficiency from the front, the structure of the actual light-emitting element 10 does not need to be strictly matched according to the above equation. More specifically, L can have an error falling within the range of ±λ / 8 of the value satisfying equation (8). The value of L can deviate from the allowable value of the interference condition by more than 50 nm and less than 75 nm.

[0097] Therefore, the organic light-emitting device according to this embodiment can meet the requirements.

[0098]

[0099] Furthermore, L can fall within the range of values ​​satisfying equation (8) ± λ / 16, and can satisfy...

[0100]

[0101] The light-emitting element 10 can be configured such that m = 10 and m' = 0 in inequalities (9) and (9') respectively, that is, it can be configured according to the λ / 4 interference condition. In this case, inequalities (9) and (9') will be expressed as follows:

[0102]

[0103]

[0104] If m = 0 and m' = 0 in inequalities (9) and (9'), then the organic layer 4 will have the minimum film thickness in the enhanced interference structure. This will reduce the driving voltage of the light-emitting element 10, and the light-emitting element 10 will be able to emit light with higher brightness within the upper limit of the power supply voltage. If the organic layer 4 is thinned, leakage current will be more easily generated between the upper electrode 5 and each of the lower electrodes 2. Therefore, the organic layer 4 cannot be thinned simply by utilizing the tilt of the insulating layer 3. In contrast, by satisfying the above inequalities (1) and (2), it will be possible to suppress the generation of leakage current between the lower electrodes 2 while suppressing the leakage current between the upper electrode 5 and each of the lower electrodes 2. Furthermore, by satisfying the above inequality (3), the generation of leakage current between the lower electrodes 2 can be further suppressed.

[0105] The emission wavelength λ here can be the maximum peak wavelength of the emission spectrum of light emitted by the luminescent layer of organic layer 4. Typically, in the luminescence of organic compounds, the peak on the shorter wavelength side of the emission spectrum represents the maximum emission. Therefore, the maximum peak wavelength can be, for example, the wavelength of the peak on the shortest wavelength side of the emission spectrum.

[0106] Furthermore, in the portion contacting the lower electrode 2, the thickness of the organic layer 4 in the direction perpendicular to the upper surface of the lower electrode 2 (e.g., portion 21) can be less than 100 nm. This will make it easier to reduce the driving voltage of the organic device 100. This will also enhance the effectiveness of embodiments that suppress leakage current generation between the lower electrodes 2 while also suppressing leakage current generation between the upper electrode 5 and each of the lower electrodes 2.

[0107] In this embodiment, the tilt angle of the tilted portion 312 (the angle relative to the plane parallel to the main surface 12 of the substrate 1) falls within the range of greater than 50° and less than 180°. If the tilt angle is greater than 50°, the thickness of the organic layer 4 along the region of the tilted portion 312 will easily decrease. On the other hand, if the tilt angle is less than 50°, the thickness of the organic layer 4 along the tilted portion 312 will hardly decrease. To verify the relationship between the organic layer 4 and the tilt angle, a simulation of deposition by a vapor deposition method was performed. Figure 6 This diagram illustrates the configuration of the components during the deposition simulation. The deposition source 201, substrate 1, and light-emitting element 10 disposed on substrate 1 are arranged as follows: Figure 6 The positions shown make R = 200mm, r = 95mm and h = 340mm.

[0108] Additionally, the simulation is set up so that n=2 in the deposition distribution shown below.

[0109]

[0110] Where α is the angle. Let be the vapor flow density at angle α. The vapor flow density is given when α = 0. Additionally, it is assumed that substrate 1 will rotate about the center of the substrate.

[0111] Assuming that there is a tilted portion with a tilt angle between 0° and 90° at the position of the light-emitting element 10 on the substrate 1, the thickness of the organic layer 4 along the tilted portion at each tilt angle is calculated when the thickness of the organic layer 4 at the tilt angle is 76 nm. Figure 7 The results of the sedimentation simulation are shown. It can be seen that the inflection point of the graph is 50°.

[0112] Therefore, by setting the angles of the tilted portions 312 and 322 relative to the plane parallel to the main surface 12 of the substrate 1 to be greater than 50°, the thickness of the charge generation layer 42 and the charge transport layer 431 can be reduced. As a result, the generation of leakage current between adjacent lower electrodes 2 can be effectively suppressed. Furthermore, by adjusting the tilt angle of the tilted portion 312 to fall within the range of greater than 50° and less than 90°, the film thickness of the portions of the organic layer 4, the charge generation layer 42, and the charge transport layer 431 that contribute to reducing leakage current can be adjusted to an appropriate thickness. Moreover, by setting the tilt angle of the tilted portion 312 to an inverted conical shape greater than 90°, the thickness of the charge generation layer 42 and the charge transport layer 431 can be reduced. Therefore, the tilt angle of the tilted portion 312 can be adjusted to fall within the range of greater than 50° and less than 120°. Furthermore, the tilt angle of the tilted portion 312 can be adjusted to fall within the range of greater than 50° and less than 150°. Additionally, the tilt angle of the tilted portion 312 can be adjusted to fall within the range of greater than 50° and less than 180°.

[0113] Furthermore, by setting the tilt angle (the angle relative to the plane parallel to the main surface 12 of the substrate 1) of the gently tilted portion 313 to 0° or more and 50° or less, it is possible to prevent the film thickness of the organic layer 4 from becoming too thin. Therefore, it is possible to suppress the leakage current between the upper electrode 5 and each of the lower electrodes 2 while reducing the leakage current between the lower electrodes 2.

[0114] Figure 8 To show Figure 1 and Figure 3 A cross-sectional view of a variant of the organic device 100 is shown. The lower electrodes 20 (20R, 20G, and 20B) and the reflective electrodes 80 (80R, 80G, and 80B) are interconnected via corresponding plugs 91. The aforementioned insulating layer 3 is disposed between adjacent lower electrodes 20 of the light-emitting element 10. A lower insulating layer 81 is disposed between the reflective electrodes 80. The lower insulating layer 81 includes recesses between adjacent reflective electrodes 80, and an inter-sidewall insulating layer 83 is disposed between the sidewalls of the recesses. The upper surface of the inter-sidewall insulating layer 83 is covered by an intermediate insulating layer 82.

[0115] A reflective electrode 80 is disposed on the substrate 1, and a lower insulating layer 81 and an intermediate insulating layer 82 are disposed between the reflective electrode 80 and the lower electrode 20. Additionally, in the sub-pixel where a light-emitting element 10R is to be disposed, an optical adjustment layer 101R is disposed between the intermediate insulating layer 82 and the lower electrode 20R. In the sub-pixel where a light-emitting element 10G is to be disposed, an optical adjustment layer 101G is disposed between the intermediate insulating layer 82 and the lower electrode 20G. In the sub-pixel where a light-emitting element 10B is to be disposed, no optical adjustment layer is disposed between the intermediate insulating layer 82 and the lower electrode 20B. Although... Figure 8The diagram shows the configuration in which the reflective electrode 80 is arranged, but the light reflective layer disposed between each optical adjustment layer 101 and the substrate 1 does not need to have the function of an electrode.

[0116] exist Figure 8 In the illustrated configuration, optical adjustment layer 101R and optical adjustment layer 101G are shown as separate insulating layers. However, the invention is not limited thereto. For example, a common insulating layer may be disposed between the intermediate insulating layer 82 and the lower electrodes 20R and 20G, and other insulating layers may be disposed between the common insulating layer and the lower electrode 20R.

[0117] Each optical adjustment layer 101 is, for example, an insulating layer and can be an inorganic or organic compound. For example, from the viewpoint of inhibiting moisture from entering the organic layer 4, the optical adjustment layer 101 can be made of an inorganic compound. More specifically, for example, the optical adjustment layer 101 can be formed by using silicon oxide, silicon nitride, silicon oxynitride, or a combination of these compounds.

[0118] In the light-emitting elements 10R and 10G, lower electrodes 20R and 20G are formed on each optical adjustment layer 101, and an insulating layer 3 is formed to cover the outer periphery of each lower electrode 20. The insulating layer 3 may also cover the ends of the optical adjustment layer 101R and the ends of the optical adjustment layer 101G.

[0119] Each reflective electrode 80 is a light-reflective electrode and can be formed using a material similar to the lower electrode 2 described above. The lower insulating layer 81, the intermediate insulating layer 82, and each optical adjustment layer 101 are light-transmitting insulating members and can be formed using a material similar to the insulating layer 3. The lower electrode 20 is a light-transmitting conductive member and can be formed using conductive oxides such as ITO (indium tin oxide) or IZO (indium zinc oxide).

[0120] The organic device 100 according to this embodiment can optimize the distance related to the optical interference of the red light-emitting element 10R, the green light-emitting element 10G, and the blue light-emitting element 10B, respectively. Since other configurations can be similar... Figure 1 The configuration of the organic device 100 shown is so detailed that a separate description of it will be omitted.

[0121] The side closer to the lower electrode 20R of the insulating layer 3 of the light-emitting element 10R will be described. Similar to the relationship between the lower electrode 2 and the insulating layer 3, a portion 21R not covered by the insulating layer 3 may exist on the upper surface of the lower electrode 20, and a portion 312R may exist within the upper surface 31 of the insulating layer 3. In this case, the relationship between the distance from the main surface 12 of the substrate 1 to the portion 312R and the distance from the main surface 12 of the substrate 1 to each layer of the organic layer 4 can satisfy the above-described inequalities (1) and (2).

[0122] Additionally, the portion 3a on the lower electrode-opposite side of the insulating layer 3 of the light-emitting element 10R will be described. Similar to the relationship between the upper surface 32 and portion 33 on the portion 3a side of the insulating layer 3 described above, a portion 34R and an inclined portion 325R of the insulating layer 3 may also exist. In this case, the relationship between the distance from the main surface 12 of the substrate 1 to the inclined portion 325R and the distance from the main surface 12 of the substrate 1 to each layer of the organic layer 4 can satisfy the above-described inequalities (1) and (2). At this time, as... Figure 8 As shown, a portion 21R of the upper surface of the lower electrode 20 can be positioned further away from the main surface 12 of the substrate 1 than a portion 34R of the upper surface of the insulating layer 3.

[0123] Furthermore, the insulating layer 3 disposed between the light-emitting element 10R and the light-emitting element 10G will be described. The insulating layer 3 disposed between the light-emitting element 10R and the light-emitting element 10G may include a portion 33R that is closer to the main surface 12 of the substrate 1 than portion 34R between the lower electrode 20G and the portion 34R disposed on the optical adjustment layer 101R. The portion 33R may be a flat portion that is substantially parallel to the main surface 12 of the substrate 1. In addition, the portion 33R may be a portion where the slope between portion 34R and the lower electrode 20G changes from downward slope to upward slope. The inclined portion 322R disposed on the upper surface of the insulating layer 3 between portion 34R and portion 33R may also be configured such that the distance from the main surface 12 of the substrate 1 to the inclined portion 322R and the distance from the main surface 12 of the substrate 1 to each layer of the organic layer 4 will satisfy the above-described inequalities (1) and (2). In addition, the upper surface of the insulating layer 3 disposed between portion 33R and the lower electrode 20G may also satisfy the above-described inequalities (1) and (2). Furthermore, the insulating layer 3 disposed between the lower electrode 20G and the lower electrode 20B can also satisfy the above inequalities (1) and (2).

[0124] As a result, it is easier to suppress leakage current between the light-emitting elements 10 and between the upper electrode 5 and each of the lower electrodes 20. By configuring two "steeply inclined portions (corresponding to the inclined portions 312 and 322 mentioned above)," the angle between each of the light-emitting elements 10 relative to the plane parallel to the main surface 12 of the substrate 1 is greater than 50° and less than 180°. Due to the small film thickness of the charge generating layer 42, there will be two locations with high resistance. As a result, it is easier to suppress leakage current between the light-emitting elements 10. In addition, since using two steeply inclined portions makes it easier to set the height of each steeply inclined portion to be lower than the height of the upper end of the organic layer 4 (distance from the main surface 12), it is easier to suppress leakage current between the upper electrode 5 and each of the lower electrodes 20 compared to the case where leakage current between the light-emitting elements 10 is suppressed by increasing the height of one steeply inclined portion.

[0125] exist Figure 1 and Figure 3 In this configuration, the layer whose thickness variation is related to optical interference is limited to the organic layer 4 between the lower electrode 2 and the upper electrode 5. On the other hand, in Figure 8 In the configuration shown, the layers whose thickness variation is related to optical interference include, in addition to the organic layer 4, the layer extending from directly above the reflective electrode 80 (which has light reflectivity) to the translucent lower electrode 20. Therefore, the organic layer 4 needs to be thin. As a result, the organic layer 4 becomes thinner at the steeply sloping portion of the insulating layer 3, and leakage current will flow more easily between the upper electrode 5 and each of the lower electrodes 2. Therefore, Figure 8 The organic device 100 can greatly benefit from the effect of leakage current suppression.

[0126] In addition, such as Figure 8 As shown, the organic device 100, which optimizes the optical interference path by adjusting the thickness of each layer of the light-emitting elements 10 of each color to be lower than the thickness of the organic layer 4 (closer to one side of the substrate 1), tends to include large steps in the layer between the light-emitting elements 10 and directly below the organic layer 4. Therefore, the organic device 100 according to this embodiment can greatly benefit from the aforementioned effects obtained by including the steeply inclined portion.

[0127] exist Figure 8 In the configuration shown, a steeply inclined portion can be arranged between the light-emitting elements 10 where the distance difference between the upper surface of the lower electrode 2 and the main surface 12 of the substrate 1 is greatest. For example, in Figure 8 In this configuration, the light-emitting element 10R can be positioned on the opposite side to the light-emitting elements 10B and 10G. The relationship between the upper surface of the insulating layer 3 between the light-emitting elements 10B and 10R and the layers of the organic layer 4 can satisfy the aforementioned inequalities (1) and (2). Since the organic layer 4 tends to be thinner between the light-emitting elements 10 where the distance difference between the upper surface of the lower electrode 2 and the main surface 12 of the substrate 1 is the largest, the aforementioned leakage current suppression effect can be greatly benefited.

[0128] In this embodiment, the light-emitting layer containing the material with the shortest wavelength emission peak can be configured to be closer to one side of the substrate 1 than other light-emitting layers. Since this reduces the optical design distance from the light-emitting layer containing the material with the shortest wavelength emission peak to each reflective electrode 80, the organic layer 4 can be thinned. This reduces the driving voltage of each light-emitting element 10, allowing for higher brightness emission within the upper limit of the power supply voltage. If the organic layer 4 is thinned, leakage current between the upper electrode 5 and each lower electrode 20 will be more easily generated. Therefore, the organic layer 4 cannot be thinned solely by tilting the insulating layer 3. However, by satisfying the conditions of the above inequalities (1), (2), and (3), leakage current between the lower electrodes 2 can be sufficiently suppressed while suppressing leakage current between the upper electrode 5 and each lower electrode 20.

[0129] Next, an embodiment of the organic device 100 according to this implementation scheme (Example 1) will be described.

[0130] First, a lower electrode 2 is formed by forming a metal layer on a substrate 1 and etching a desired area of ​​the metal layer using a mask pattern, etc. Next, an insulating layer 3 is formed to cover the outer periphery of each lower electrode 2. In this embodiment, the insulating layer 3 is formed of silicon oxide, and the film thickness of the insulating layer 3 on the upper surface of the lower electrode 2 in a direction perpendicular to the upper surface of the lower electrode 2 is set to 170 nm.

[0131] After forming the insulating layer 3, openings are formed by etching to expose portions 21 of the upper surfaces of each lower electrode 2. The shape of the insulating layer 3 is as follows: Figure 3 The diagram shows the shapes including inclined portions 312 and 322, and gently inclined portions 313 and 321. The angle (tilt angle) of inclined portion 312 relative to the plane parallel to the main surface 12 of substrate 1 is 80°, and the angle (tilt angle) of gently inclined portion 313 is 10°. The difference between the distance from the main surface 12 of substrate 1 to the upper end of inclined portion 312 and the distance from the main surface 12 of substrate 1 to the portion 21 not covered by the insulating layer 3 of the lower electrode 2 is 150 nm. That is, the upper end of inclined portion 312 is positioned 150 nm higher than the portion 21 of the lower electrode 2. Furthermore, the tilt angle of inclined portion 322 is 80°, and the tilt angle of gently inclined portion 321 is 10°. The difference between the distance from the main surface 12 of substrate 1 to the upper end of inclined portion 322 and the distance from the main surface 12 of substrate 1 to the portion 33 of insulating layer 3 is 150 nm. That is, the upper end of the inclined portion 322 is positioned 150 nm higher than the portion 33 of the insulating layer 3.

[0132] In this embodiment, the pixels are configured such that each pixel has as Figure 2The hexagonal triangle arrangement is shown. The distance between the portions (openings) not covered by the insulating layer 3 of two adjacent lower electrodes 2 is set to 1.4 μm, and the distance between adjacent lower electrodes 2 is set to 0.6 μm.

[0133] Next, organic layer 4 is formed. Organic layer 4 is formed by sequentially comprising a hole transport layer (a layer formed by stacking a hole injection layer, a hole transport layer, and an electron blocking layer), a light-emitting layer having a two-layer configuration, and an electron transport layer (a layer formed by stacking an electron transport layer and an electron injection layer). First, the material shown in Compound 1 is deposited on substrate 1 to form a hole injection layer with a thickness of 7 nm.

[0134]

[0135] Next, the material shown in Compound 2 is deposited to form a hole transport layer with a thickness of 5 nm, and the material shown in Compound 3 is deposited to form an electron blocking layer with a thickness of 45 nm. Subsequently, as the first layer of the luminescent layer, a luminescent layer is formed in which the material shown in Compound 6 is used as the host material and the material shown in Compound 4 is used as the luminescent dopant. The luminescent dopant is adjusted to have a weight ratio of 1%, and the layer thickness of the first luminescent layer is set to 30 nm. Next, Compound 7 is deposited to form an electron transport layer with a thickness of 21 nm.

[0136]

[0137] Next, LiF is deposited to form a first charge generation layer with a thickness of 1 nm, Al is deposited to form a second charge generation layer with a thickness of 2 nm, and molybdenum oxide (MoO3) is deposited to form a third charge generation layer with a thickness of 10 nm.

[0138] Next, the material shown in compound 2 above is deposited to form a hole transport layer with a thickness of 5 nm, and compound 3 above is deposited to form an electron blocking layer with a thickness of 15 nm.

[0139] Next, as the second light-emitting layer, a light-emitting layer is formed in which compound 4 is the host material and compound 5 is the light-emitting dopant. The light-emitting dopant is adjusted to have a weight ratio of 3%, and the thickness of the second light-emitting layer is set to 10 nm. After forming the light-emitting layer with a two-layer structure, compound 7 is deposited to form an electron transport layer with a thickness of 30 nm, and LiF is deposited to form an electron injection layer with a thickness of 0.5 nm.

[0140]

[0141] After the organic layer 4 is formed, a MgAg alloy with a Mg:Ag ratio of 1:1 is deposited to a thickness of 10 nm as the upper electrode 5. After the upper electrode 5 is formed, silicon nitride is deposited by CVD to form a protective layer 6 with a thickness of 1.5 μm. After the protective layer 6 is formed, a planarization layer 8 and a color filter 7 are formed.

[0142] The ratio of the 1.4 μm distance between the portions of two adjacent lower electrodes 2 not covered by the insulating layer 3 to the 181 nm thickness of the portion of the organic layer 4 in contact with the portion 21 of each lower electrode (the total thickness of the organic layers) is 8 or more and less than 50.

[0143] The height of the charge generating layer 42 above portion 21 is 121 nm. Furthermore, the height of the upper surface of the charge transport layer 431, which is above portion 21 and in contact with the upper surface of the charge generating layer 42, is 141 nm from portion 21. Additionally, the thickness of the organic layer 4 on portion 33, the height from portion 33 to the upper surface of the charge generating layer 42, and the height from portion 33 to the upper surface of the charge transport layer 431 are similar to the values ​​measured from portion 21 above. Furthermore, as described above, the upper ends of the inclined portion 312 and the inclined portion 322 are respectively positioned 150 nm above portions 21 and 33.

[0144] Therefore, the upper ends of inclined portions 312 and 322 are farther from the main surface 12 of the substrate 1 than the upper surfaces of the charge generation layers 42 above portions 21 and 33, respectively. That is, the relationship of inequality (1) above is satisfied. In addition, the upper ends of inclined portions 312 and 322 are closer to the main surface 12 of the substrate 1 than the upper surfaces of the organic layers 4 on portions 21 and 33, respectively. That is, the relationship of inequality (2) above is satisfied. Furthermore, the upper ends of inclined portions 312 and 322 are farther from the main surface 12 of the substrate 1 than the upper surfaces of the charge transport layers 431 on portions 21 and 33, respectively. That is, the relationship of inequality (3) above is satisfied.

[0145] Next, the characteristics of the organic device 100 according to this embodiment will be described. First, using the light-emitting element 10R as an example, I, as an indicator related to the leakage current between the lower electrode 2, will be explained. leak / I oled The measurement method.

[0146] With the light-emitting elements 10G and 10B, which are two adjacent pixels, short-circuited (potential = 0V), the light-emitting element 10R is energized. At this time, I OLED This represents the current flowing from the lower electrode 2R of the light-emitting element 10R to the upper electrode 5 of the light-emitting element 10R, and I leakThis represents the current flowing from the lower electrode 2R of the light-emitting element 10R to the upper electrode 5 connected to the light-emitting element 10G or the upper electrode 5 of the light-emitting element 10B. leak By using I oled The potential value is measured as 0.1 nA / pixel. Assume I... leak with I oled The ratio is I leak / I oled .

[0147] The leakage current between the upper electrode 5 and the lower electrode 2 will be described next. The light-emitting threshold voltage of each light-emitting element 10 is approximately 2V. Therefore, in a light-emitting element 10 where no leakage current occurs between the upper electrode 5 and the lower electrode 2, current does not flow even if, for example, a voltage of 1.5V is applied between the upper electrode 5 and the lower electrode 2. However, in a light-emitting element 10 where leakage current does occur between the upper electrode 5 and the lower electrode 2, current will flow if a voltage of 1.5V is applied between the upper electrode 5 and the lower electrode 2. Therefore, the current value is measured when a voltage of 1.5V is applied between the upper electrode 5 and the lower electrode 2R of the light-emitting element 10R. That is, the current flowing when a voltage of 1.5V is applied is the leakage current.

[0148] Furthermore, the film thickness of each layer of the organic device 100 according to this embodiment is measured by cross-sectional TEM images. The measurement location is the entire organic layer 4 formed along portion 21, organic layer 41, charge generation layer 42, and charge transport layer 431. Additionally, for each of the entire organic layer 4, organic layer 41, charge generation layer 42, and charge transport layer 431, the thickness of the thinnest portion of each layer formed between portion 21 and portion 33 is measured. Furthermore, for each of the organic layer 4, organic layer 41, charge generation layer 42, and charge transport layer 431, the ratio of the thickness of the thinnest portion to the thickness of portion 21 or 33 is calculated as the layer thickness ratio. The results are... Figure 9 As shown in the image.

[0149] from Figure 9 It can be seen that in portions 21 and 33, the layer thickness ratio of the layer with the upper surface at a height below 150 nm tends to decrease, which is the height of the upper end of the inclined portion 312 and the upper end of the inclined portion 322. Furthermore, it can be seen that in portions 21 and 33, the layer thickness ratio of the layer with the upper surface at a height above 150 nm does not tend to decrease, which is the height of the upper end of the inclined portion 312 and the upper end of the inclined portion 322. That is, leakage current between the lower electrodes 2 can be suppressed while simultaneously suppressing leakage current between the upper electrode 5 and each of the lower electrodes 2.

[0150] Next, an organic device manufactured as a comparative example will be described. The organic device according to Comparative Example 1 was manufactured in the same manner as in Example 1, except that the upper end of the tilted portion 312 was positioned 70 nm higher than portion 21 and the upper end of the tilted portion 322 was positioned 70 nm higher than portion 33. Furthermore, the organic device according to Comparative Example 2 was manufactured in the same manner as in Example 1, except that the upper end of the tilted portion 312 was positioned 200 nm higher than the lower electrode 21 and the upper end of the tilted portion 322 was positioned 200 nm higher than portion 33.

[0151] The evaluation results of the organic devices in Example 1, Comparative Example 1, and Comparative Example 2 are summarized in... Figure 10 In. Figure 10 In, among which I leak / I oled When the value is equal to or less than 0.40, the leakage current is considered suppressed, and the evaluation result is "A". Where I leak / I oled If the value is greater than 0.40, the leakage current suppression is deemed insufficient, and the evaluation result is "B". In the evaluation of the current generated when a voltage of 1.5V is applied between the upper electrode 5 and the lower electrode 2, if the current is equal to or less than 10... -5 In the case of nA / pixel, the leakage current was suppressed and the evaluation result was "A", and when the current was greater than 10 -5 In the case of nA / pixel, the leakage current suppression is deemed insufficient, and the evaluation result is "B".

[0152] according to Figure 10 In the organic device of Embodiment 1, the upper ends of the inclined portions 312 and 322 are farther from the main surface 12 of the substrate 1 than the upper surfaces of the charge-generating layers 42 on portions 21 and 33, respectively, and closer to the main surface 12 of the substrate 1 than the upper surfaces of the organic layers 4 on portions 21 and 33, respectively. Therefore, it can be seen that the leakage current between the light-emitting elements 10 (lower electrodes 2) and the leakage current between the upper electrode 5 and each lower electrode 2 are suppressed, and good characteristics are obtained.

[0153] On the other hand, in the organic device of Comparative Example 1, the upper ends of the inclined portions 312 and 322 are closer to the main surface 12 of the substrate 1 than the upper surfaces of the charge-generating layers 42 on portions 21 and 33, respectively. Therefore, it can be seen that the leakage current between the light-emitting elements 10 (lower electrodes 2) cannot be sufficiently suppressed. Furthermore, in the organic device of Comparative Example 2, the upper ends of the inclined portions 312 and 322 are farther from the main surface 12 of the substrate 1 than the upper surfaces of the organic layers 4 on portions 21 and 33, respectively. Therefore, it can be seen that the leakage current between the upper electrode 5 and each lower electrode 2 cannot be sufficiently suppressed.

[0154] The light-emitting element 10 will be described here. Each light-emitting element 10 is configured by forming an anode, an organic compound layer, and a cathode on a substrate 1. A protective layer 6 and a color filter 7 can be formed on the cathode. If a color filter 7 is configured, a planarization layer 8 can be configured between the protective layer 6 and the color filter 7. The planarization layer 8 can be made of an acrylic resin or the like.

[0155] The above embodiments describe using a semiconductor substrate, such as silicon, as substrate 1. However, the present invention is not limited thereto. Quartz, glass, silicon wafers, resin, or metal can be used as substrate 1. Furthermore, as described in the above embodiments, switching elements such as transistors and wiring can be disposed on substrate 1, and an insulating layer can be further disposed on top of these elements. The material of the insulating layer is not particularly limited, as long as it can form contact holes to ensure conduction between the anode of the light-emitting element 10 and the transistor formed in the substrate, and can ensure insulation from unconnected wiring patterns. For example, resins such as polyamide, silicon oxide, or silicon nitride can be used.

[0156] A pair of electrodes (the upper electrode 5 and each of the lower electrodes 2) can be used as electrodes. This pair of electrodes can have an anode and a cathode. If an electric field is to be applied in the direction in which each of the light-emitting elements 10 emits light, the electrode with the higher potential will be the anode and the other electrode will be the cathode. Alternatively, the electrode that supplies holes to the light-emitting layer of the light-emitting element 10 is the anode, and the electrode that supplies electrons is the cathode.

[0157] Materials with high work functions can be used as anode components. For example, metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, or tungsten, mixtures containing some of these metals, alloys combining some of these metals, or metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), or zinc indium oxide can be used as anodes. Furthermore, conductive polymers such as polyaniline, polypyrrole, or polythiophene can also be used as anodes.

[0158] One of these electrode materials can be used alone, or two or more of them can be used in combination. The anode can be formed from a single layer or multiple layers.

[0159] When the anode is used as a reflective electrode, materials such as chromium, aluminum, silver, titanium, tungsten, molybdenum, alloys thereof, or stacks thereof can be used. When the anode is used as a transparent electrode, an oxide transparent conductive layer made of indium tin oxide (ITO) or indium zinc oxide can be used, but the invention is not limited thereto. Photolithography can be used to form the electrode.

[0160] On the other hand, materials with low work functions can be used as the constituent materials of the cathode. Examples of such materials include alkali metals such as lithium, alkaline earth metals such as calcium, metals such as aluminum, titanium, manganese, silver, lead, or chromium, and mixtures containing some of these. Alternatively, alloys obtained by combining these metals can also be used. For example, magnesium-silver alloys, aluminum-lithium alloys, aluminum-magnesium alloys, silver-copper alloys, or zinc-silver alloys can be used as cathodes. Metal oxides, such as indium tin oxide (ITO), can also be used. One of these electrode materials can be used alone, or two or more of them can be used in combination. The cathode can have a single-layer or multi-layer structure. For the cathode, silver can be used, or a silver alloy can be used to suppress silver accumulation. There are no restrictions on the alloy ratio, as long as it can suppress silver accumulation. For example, the ratio between silver and other materials can be 1:1.

[0161] The cathode can be a top emitting element using an oxide conductive layer made of ITO or the like, or a bottom emitting element using a reflective electrode made of aluminum (Al) or the like, and there are no particular limitations. The method of forming the cathode is not particularly limited, but using DC sputtering or AC sputtering provides good film coverage and facilitates a reduction in resistance.

[0162] The protective layer 6 can be disposed on the cathode. For example, by attaching a glass coated with a desiccant to the cathode, the penetration of water or the like into the light-emitting layer, such as the organic EL layer, can be suppressed, and the occurrence of display defects can be prevented. Furthermore, as another embodiment, a passivation film made of silicon nitride or the like can be disposed on the cathode to suppress the penetration of water or the like into the light-emitting layer. For example, after forming the cathode and transferring it to another chamber without breaking the vacuum, a silicon nitride film with a thickness of 2 μm can be formed by chemical vapor deposition (CVD) to obtain the protective layer 6. The protective layer 6 can be disposed using atomic deposition (ALD) after the film is formed using CVD.

[0163] The color filter 7 can be disposed on the protective layer 6. For example, considering the size of the light-emitting element 10, the color filter 7 can be disposed on another substrate, and the substrate on which the color filter 7 is disposed can be bonded to the substrate 1 on which the light-emitting element 10 is disposed. Alternatively, the color filter 7 can be patterned on the protective layer 6 using photolithography. The color filter 7 can be formed of a polymer material.

[0164] A planarization layer 8 can be disposed between the color filter 7 and the protective layer 6. The planarization layer 8 can be formed of an organic compound and can be made of low-molecular-weight or high-molecular-weight materials. For example, the planarization layer 8 can be formed of a high-molecular-weight organic compound.

[0165] The planarization layer 8 can be disposed above and below the color filter, and the same or different materials can be used for them. More specifically, examples of such materials include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenolic resin, epoxy resin, silicone resin, and urea-formaldehyde resin.

[0166] A counter substrate can be disposed on the planarization layer 8. The counter substrate is called a counter substrate because it is disposed at a position corresponding to the aforementioned substrate. The material of the counter substrate can be the same as the material of the aforementioned substrate 1.

[0167] The organic layer 4 (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, and electron injection layer, etc.) of the light-emitting element 10 according to one embodiment of the present invention is formed by the following method. The organic layer 4 can be formed by a dry method such as vacuum deposition, ionization deposition, sputtering, or plasma deposition. Instead of a dry method, a wet method can be used, which involves dissolving a solute in a suitable solvent and forming the layer using a known coating method (e.g., spin coating, dip coating, casting, LB coating, or inkjet coating, etc.).

[0168] Here, when the organic layer 4 is formed by vacuum evaporation or solution coating, almost no crystallization occurs, and excellent stability over time is obtained. Furthermore, when the organic layer 4 is formed using a coating method, it can be combined with a suitable binder resin to form a film.

[0169] Examples of adhesive resins include polyvinylcarbazole resins, polycarbonate resins, polyester resins, ABS resins, acrylic resins, polyimide resins, phenolic resins, epoxy resins, silicone resins, and urea-formaldehyde resins. However, adhesive resins are not limited to these.

[0170] One of these adhesive resins can be used alone as a homopolymer or copolymer, or in combination of two or more. Additionally, additives such as known plasticizers, antioxidants, and UV absorbers can be used as needed.

[0171] Next, the light-emitting device according to this embodiment will be described with reference to the accompanying drawings. Figure 11 This is a schematic cross-sectional view showing an example of an organic device 100 including a light-emitting element, which is an example of the light-emitting element 10 described above, and a TFT element connected to the light-emitting element. The TFT element is an example of an active element.

[0172] As Figure 11 The light-emitting device 2310 of the example of the organic device 100 shown is provided with a substrate 2311 of glass or silicon and an insulating layer 2312 thereon. An active element such as a TFT 2318 is disposed on the insulating layer 2312, and the gate electrode 2313, the gate insulating film 2314 and the semiconductor layer 2315 of the TFT 2318 are disposed thereon. Figure 11 The TFT 2318 shown is an example of a transistor driving circuit. The TFT 2318 further includes a semiconductor layer 2315, a drain electrode 2316, and a source electrode 2317. An insulating film 2319 is disposed on the TFT 2318. The source electrode 2317 and the anode 2321 forming the light-emitting element are connected via contact holes 2320 formed in the insulating film 2319.

[0173] Note that the electrical connection method between the electrodes (anode and cathode) included in the light-emitting element and the electrodes (source electrode and drain electrode) included in the TFT is not limited to... Figure 11 The method shown is such that one of the anode and cathode is electrically connected to one of the source and drain electrodes of the TFT 2318. TFT stands for Thin Film Transistor.

[0174] exist Figure 11 In the illustrated light-emitting device 2310, the organic layer 2322 is shown as a single layer. However, the organic layer 2322 may comprise multiple layers. Protective layers 2324 and 2325 are disposed on the cathode 2323 to suppress degradation of the light-emitting element.

[0175] Transistors are used as Figure 11 The switching element in the light-emitting device 2310 shown can also be used as other switching elements.

[0176] Figure 11The transistors used in the illustrated light-emitting device 2310 are not limited to transistors using a single-crystal silicon wafer, but can also be thin-film transistors comprising an active layer on an insulating surface of a substrate. Examples of active layers include single-crystal silicon, amorphous silicon, non-single-crystal silicon such as microcrystalline silicon, and non-single-crystal oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Note that thin-film transistors are also referred to as TFT elements.

[0177] Figure 11 The transistors included in the light-emitting device 2310 shown can be formed in a substrate such as a Si substrate. Here, "formed in a substrate" means that the transistors are formed by processing the substrate itself, such as a Si substrate. In other words, including the transistors within the substrate can be considered as forming the substrate and the transistors integrally.

[0178] The luminous intensity of the light-emitting element 10 according to this embodiment is controlled by a TFT, which is an example of a switching element, and the light-emitting elements are disposed in multiple surfaces to display an image having the luminous intensity of each element. Note that the switching element according to this embodiment is not limited to a TFT, and can be a transistor formed of low-temperature polysilicon, or an active matrix driver formed on a substrate such as a Si substrate. The term "on the substrate" can mean "within the substrate". The choice between placing a transistor within the substrate or using a TFT is based on the size of the display unit. For example, if the size is about 0.5 inches, the organic light-emitting device can be disposed on a Si substrate.

[0179] The following will refer to Figures 12 to 17 Examples of applications of the organic device 100 in the above embodiments are described, including its application in display devices, photoelectric conversion devices, electronic devices, lighting devices, and mobile devices. Specifically, examples of applications of the organic device will be described where the organic layer 4 includes a light-emitting layer. Furthermore, the organic device 100 can be applied to exposure light sources in electrophotographic image forming apparatuses, backlights in liquid crystal display devices, and light-emitting devices including color filters in white light sources. The display device can be an image input unit that includes an image input unit for inputting image information from a CCD array, a linear CCD array, or a memory card, and an information processing unit for processing the input information and displaying the input image on the display unit. Additionally, the display unit included in a camera or inkjet printer can have a touch panel function. The driving method for the touch panel function can be infrared, capacitive, resistive film, or electromagnetic induction, and there are no particular limitations. This display device can be used as the display unit of a multifunction printer.

[0180] Figure 12This is a schematic diagram illustrating an example of a display device using the organic device 100 according to this embodiment. The display device 2400 may include a touch panel 2403, a display panel 2405, a frame 2406, a circuit board 2407, and a battery 2408 located between an upper cover 2401 and a lower cover 2409. Flexible printed circuits (FPCs) 2402 and 2404 are connected to the touch panel 2403 and the display panel 2405, respectively. Active components such as transistors are disposed on the circuit board 2407. If the display device 2400 is not a portable device, the battery 2408 is unnecessary. Even when the display device 2400 is a portable device, it is not necessary to place the battery 2408 in this location. The organic device 100, wherein the light-emitting layer of the organic layer 4 contains an organic light-emitting material such as organic EL, can be applied to the display panel 2405. The organic device 100 used as the display panel 2405 operates by connecting to active components such as transistors disposed on the circuit board 2407.

[0181] Figure 12 The display device 2400 shown can also be used as a display unit of a photoelectric conversion device (imaging device), which includes an optical unit with multiple lenses and an imaging element for receiving light that has passed through the optical unit and converting the light into an electrical signal. The photoelectric conversion device may have a display unit for displaying information acquired by the imaging element. Alternatively, the display unit can be an external display unit or a display unit disposed within a viewfinder. The photoelectric conversion device can also be a digital camera or a digital video camera. Furthermore, according to this embodiment, the organic device 100, in which the functional layer of the organic layer 4 includes a photoelectric conversion layer, can be used as a photoelectric conversion element of the photoelectric conversion device.

[0182] Figure 13 This is a schematic diagram illustrating an example of a photoelectric conversion device using the organic device 100 according to this embodiment. The photoelectric conversion device 2500 may include a viewfinder 2501, a rear display 2502, an operation unit 2503, and a housing 2504. The photoelectric conversion device 2500 may also be referred to as an imaging device. The aforementioned organic device 100, in which the light-emitting layer of the organic layer 4 contains organic light-emitting material, can be applied to the viewfinder 2501 as a display unit. In this case, the organic device 100 can display not only the image to be captured, but also environmental information and imaging instructions, etc. Examples of environmental information include the intensity and direction of external light, the speed of movement of objects, and the possibility that objects are obscured by obstacles.

[0183] The optimal time for imaging is typically very short, so information should be displayed as quickly as possible. Therefore, the aforementioned organic device 100, in which the light-emitting layer 4 contains organic light-emitting material, can be used as a viewfinder 2501. This is because organic light-emitting materials have a high response speed. For the organic device 100 using organic light-emitting material, a high display speed is achieved. The organic device 100 is more suitable for these devices than a liquid crystal display.

[0184] The photoelectric conversion device 2500 includes an optical unit (not shown). This optical unit has multiple lenses, and an image of the light that has passed through the optical unit is formed on a photoelectric conversion element (not shown) housed in a housing 2504 and receiving light. The focal points of the multiple lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

[0185] The organic device 100, in which the light-emitting layer 4 of the organic layer contains organic light-emitting materials, can be applied to the display unit of an electronic device. In this case, the organic device 100 can simultaneously have display and operation functions. Examples of portable terminals include smartphones, tablet computers, and head-mounted displays.

[0186] Figure 14 This is a schematic diagram illustrating an example of an electronic device using the organic device 100 according to this embodiment. The electronic device 2600 includes a display unit 2601, an operation unit 2602, and a housing 2603. The housing 2603 may house circuitry, a printed circuit board having the circuitry, a battery, and a communication unit. The operation unit 2602 may be a button or touch panel-type response unit. The operation unit 2602 may also be a biometric authentication unit for unlocking via fingerprint authentication, etc. A portable device including a communication unit may also be considered a communication device. The aforementioned organic device 100, wherein the light-emitting layer of the organic layer 4 contains organic light-emitting material, can be applied to the display unit 2601.

[0187] Figure 15A and Figure 15B This is a schematic diagram illustrating an example of a display device using an organic device 100 according to this embodiment. Figure 15A This illustrates a display device such as a television monitor or a PC monitor. The display device 2700 includes a frame 2701 and a display unit 2702. The organic device 100, wherein the light-emitting layer of the organic layer 4 contains an organic light-emitting material, can be applied to the display unit 2702. The display device 2700 may also include a base 2703 supporting the frame 2701 and the display unit 2702. The base 2703 is not limited to... Figure 15A The form shown is acceptable. For example, the lower side of the frame 2701 can also serve as the base 2703. Furthermore, the frame 2701 and the display unit 2702 can be bent. In this case, the radius of curvature can be greater than 5,000 mm and less than 6,000 mm.

[0188] Figure 15B This is a schematic diagram illustrating another example of a display device using the organic device 100 according to this embodiment. Figure 15B The display device 2710 shown is foldable, i.e., it is a so-called foldable display device. The display device 2710 includes a first display unit 2711, a second display unit 2712, a housing 2713, and a bending point 2714. The organic device 100, wherein the light-emitting layer of the organic layer 4 contains organic light-emitting material, can be applied to each of the first display unit 2711 and the second display unit 2712. The first display unit 2711 and the second display unit 2712 can also be a seamless display device. The first display unit 2711 and the second display unit 2712 can be separated by the bending point. The first display unit 2711 and the second display unit 2712 can display different images, or they can display a single image together.

[0189] Figure 16 This is a schematic diagram illustrating an example of a lighting device using the organic device 100 according to this embodiment. The lighting device 2800 may include a housing 2801, a light source 2802, a circuit board 2803, an optical film 2804, and a light diffusion unit 2805. The aforementioned organic device 100, wherein the light-emitting layer 4 of the organic layer contains an organic light-emitting material, can be applied to the light source 2802. The optical film 2804 can be a color filter to improve the color rendering index of the light source. When illuminated, the light diffusion unit 2805 can project the light from the light source over a wide range by effectively diffusing the light. If necessary, the lighting device 2800 may also include a cover on its outermost portion. The lighting device 2800 may include both the optical film 2804 and the light diffusion unit 2805, or may include only one of them.

[0190] Lighting device 2800 is a device for illuminating a room, etc. Lighting device 2800 can emit white light, natural white light, or light of any color from blue to red. Lighting device 2800 may also include light control circuitry for controlling these light components. Lighting device 2800 may also include a power supply circuit connected to the organic device 100 used as a light source 2802. This power supply circuit may be a circuit for converting AC voltage to DC voltage. "White" has a color temperature of 4,200K, and "natural white" has a color temperature of 5,000K. Lighting device 2800 may also have a color filter. Additionally, lighting device 2800 may have a heat radiation unit. The heat radiation unit radiates heat from inside the device to the outside of the device, and examples include metals and liquid silicon with high specific heat.

[0191] Figure 17This is a schematic diagram of a car including a taillight, which is an example of a vehicle lighting device using the organic device 100 according to this embodiment. The car 2900 has a taillight 2901, and the taillight 2901 can be turned on during braking operations, etc. The organic device 100 according to this embodiment can be used as a headlight as a vehicle lighting device. The car is an example of a mobile device, and the mobile device can be a ship, drone, airplane, or railway vehicle, etc. The mobile device can include a main body and a mobile device lighting device installed in the main body. The lighting device can also be a device that sends a notification of the main body's current location.

[0192] The organic device 100, in which the light-emitting layer 4 of the organic layer contains organic light-emitting material, can be applied to a taillight 2901. The taillight 2901 may have a protective member for protecting the organic device 100 used as the taillight 2901. The material of the protective member is not limited, as long as it is a transparent material with sufficient strength, and it can be polycarbonate. The protective member may also be formed by mixing a furan dicarboxylic acid derivative or an acrylonitrile derivative into polycarbonate.

[0193] The vehicle 2900 may include a main body 2903 and a window 2902 attached to the main body 2903. This window may be for inspecting the front and rear of the vehicle, or it may be a transparent display. The aforementioned organic device 100, in which the light-emitting layer of the organic layer 4 contains organic light-emitting material, can be used as this transparent display. In this case, the constituent materials such as the electrodes of the organic device 100 may be formed from transparent components.

[0194] While the invention has been described with reference to exemplary embodiments, it should be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the appended claims is to be interpreted in the broadest sense to cover all such modifications and equivalent structures and functions.

Claims

1. An organic device, characterized by It includes a substrate, a first electrode and a second electrode disposed on the main surface of the substrate, an insulating layer including a first portion disposed between the first electrode and the second electrode and a second portion disposed to cover the outer periphery of the first electrode, an organic layer disposed on the first electrode, the second electrode and the insulating layer, and a third electrode disposed on the organic layer, wherein... The organic layer includes multiple functional layers and a charge generation layer disposed between the multiple functional layers. The first electrode includes a third portion not covered by the insulating layer. The upper surface of the insulating layer between the top of the first portion and the second portion, which is furthest from the main surface, includes an inclined portion with an angle greater than 50° and less than 180° relative to a plane parallel to the main surface. The upper end of the inclined portion is farther from the main surface than the upper surface of the charge-generating layer above the first portion, and closer to the main surface than the upper surface of the fourth portion of the organic layer above the first portion. Of the upper surfaces of the organic layer above the first portion, the upper surface of the fourth portion is closest to the main surface.

2. The device according to claim 1, wherein the organic layer comprises a plurality of charge-generating layers, and The upper end of the inclined portion is further away from the main surface than the upper surface of any one of the plurality of charge-generating layers above at least one of the first and third portions.

3. The device of claim 1, wherein the organic layer further comprises a charge transport layer disposed between the charge generation layer and the third electrode, and The upper end of the inclined portion is further away from the main surface than the upper surface of the charge transport layer above at least one of the first and third portions.

4. The device according to claim 3, wherein the charge transport layer is a hole transport layer.

5. The device of claim 3, wherein the charge transport layer is in contact with the upper surface of the charge generation layer.

6. The device according to claim 1, wherein the angle of the inclined portion relative to the plane parallel to the main surface is greater than 50° and less than 90°.

7. The device of claim 1, wherein the upper surface of at least one of the first and third portions of the insulating layer between the top further comprises a gently inclined portion having an angle of 0° or more and 50° or less relative to a plane parallel to the main surface.

8. The device of claim 7, wherein the gently tilting portion is disposed between the top and the tilting portion.

9. The device according to claim 1, wherein D / C < 50 wherein C is the thickness of the organic layer on at least one of the first portion and the third portion, and D is the distance between the third portion and the portion of the second electrode not covered by the insulating layer.

10. The device according to claim 1, further comprising: Including multiple lower electrodes of the first electrode and the second electrode, The first electrode and the second electrode are arranged adjacent to each other.

11. The device of claim 1, wherein the third portion is further away from the main surface than the first portion.

12. The device of claim 1, wherein an optical adjustment layer is disposed between the first electrode and the main surface. The first part is disposed on the optical adjustment layer, and A fifth portion, which is closer to the main surface than the first portion, is further disposed between the first portion and the second electrode.

13. The device of claim 12, wherein the upper surface between the first portion and the fifth portion of the insulating layer includes other inclined portions different from the inclined portions whose angle with respect to a plane parallel to the main surface is greater than 50° and less than 180°, and The upper end of the other inclined portion is farther from the main surface than the upper surface of the charge-generating layer on the fifth portion, and closer to the main surface than the upper surface of the organic layer on the fifth portion.

14. The device of claim 12, wherein other optical adjustment layers with a film thickness less than that of the optical adjustment layer are disposed between the second electrode and the main surface.

15. The device of claim 12, wherein no optical adjustment layer is disposed between the second electrode and the main surface.

16. The device of claim 1, wherein the plurality of functional layers comprises one of a light-emitting layer and a photoelectric conversion layer.

17. The device of claim 1, wherein the plurality of functional layers includes a light-emitting layer. The first electrode and the second electrode are each configured as reflective electrodes to reflect light emitted from the light-emitting layer, and the third electrode is configured as a transmittant electrode to transmit light emitted from the light-emitting layer. The distance L from the first electrode and the second electrode to the third electrode satisfies (λ / 8) × (–(2φ / π) - 1) < L < (λ / 8) × (–(2φ / π) + 1) wherein λ is the maximum peak wavelength of the emission spectrum of the light emitted by the light-emitting layer, and φ is the phase shift in the first electrode and the second electrode.

18. A display device comprising: It includes: Organic device according to any one of claims 1 to 17; and Active elements connected to the organic device.

19. A photoelectric conversion device, comprising: It includes: An optical unit containing multiple lenses; An image capturing element configured to receive light passing through the optical unit; and A display unit configured to display images. The display unit is configured to display an image captured by the image capturing element, and includes an organic device according to any one of claims 1 to 17.

20. An electronic device, comprising: It includes: A housing equipped with a display unit; and A communication unit configured to communicate with external devices. The display unit includes an organic device according to any one of claims 1 to 17.

21. A lighting device, characterized in that, It includes: light source; and At least one of the light diffusion unit and the optical film, The light source described herein includes an organic device according to any one of claims 1 to 17.

22. A lighting fixture for a mobile device, comprising: It includes: Organic device according to any one of claims 1 to 17; and A protective component configured to protect the organic device.

23. A mobile device, comprising: It includes: main body; and A lighting appliance configured on the main body, wherein the lighting appliance comprises an organic device according to any one of claims 1 to 17.

Images