Semiconductor device
CN113937101BActive Publication Date: 2025-07-08SAMSUNG ELECTRONICS CO LTD
Patent Information
- Application Number
- CN202110369109.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-07-14
- Filing Date
- 2021-04-06
- Publication Date
- 2025-07-08
- Estimated Expiration
- 2041-04-06
Smart Images
Figure CN113937101B_ABST
Abstract
A semiconductor device is disclosed that includes a first logic unit and a second logic unit located on a substrate. Both the first logic unit and the second logic unit include: a first active region and a second active region, the first active region and the second active region being adjacent to each other in a first direction; a gate electrode that straddles the first active region and the second active region and extends longitudinally in the first direction; and a first metal layer located on the gate electrode. The first metal layer includes a first power line and a second power line that extend longitudinally and are parallel to each other in a second direction perpendicular to the first direction. The first logic unit and the second logic unit are adjacent to each other in the second direction along the first power line and the second power line. The first active region and the second active region extend longitudinally from the first logic unit to the second logic unit in the second direction.
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Citation Information
Patent Citations
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