Power electronic switching device with terminal element and connection means

Abstract

A power electronic switching device having a terminal element, a substrate having a first and a second conductor track, a power semiconductor component arranged on the first conductor track, a connection device composed of a film composite having a first electrically conductive film facing the substrate, an electrically insulating film following in the film composite, and a second electrically conductive film further following in the film composite, wherein a second contact section area of one of the electrically conductive films is connected to a contact area of the second conductor track by material bonding and electrically conductive connection, such that sub-section areas of the second contact section area do not have a materially bonded connection, wherein a terminal element contact area in the extent of the second contact section area is connected to one of the electrically conductive films by material bonding and electrically conductive connection, and wherein the sub-section areas and the terminal element contact area are aligned with one another in the normal direction and at least partially overlap one another in the process.

Description

Technical Field

[0001] The present invention describes a power electronic switching device comprising: terminal elements; a substrate having first and second conductor tracks, wherein a power semiconductor component is disposed on the first conductor track by a conductive connection; and a connection device comprising a film composite having a first conductive film facing the substrate, an electrically insulating film thereafter in the film composite, and a second conductive film thereafter in the film composite, wherein a first contact segment region of one of the conductive films is connected to a first contact region of the power semiconductor component by a conductive connection. Background Technology

[0002] DE 10 2019 117 476 A1 discloses a power electronic switching device comprising: a power semiconductor component disposed on a first conductor track of a substrate; a connection means connecting the power semiconductor component to a second conductor track of the substrate and comprising a film composite including a first conductive film facing the substrate and the power semiconductor component, an electrically insulating film thereafter in the film composite, and a second conductive film thereafter preferably further in the film composite; and a terminal element having a first contact section wherein the first contact section is material-bonded and electrically connected to a second contact section of one of the conductive films facing away from the substrate. Summary of the Invention

[0003] In view of the background of the prior art, the object of the present invention is to improve the configuration of the connection between the film composite and the substrate, especially in the area of ​​the terminal element, and to reduce the mechanical load at that point.

[0004] According to the present invention, this objective is achieved by a power electronic switching device comprising: terminal elements; a substrate having a normal direction and first and second conductor tracks, wherein power semiconductor components are disposed on the first conductor tracks by conductive connection; a connection device made of a film composite having a first conductive film facing the substrate, and an electrically insulating film following in the film composite, and a second conductive film further following in the film composite, wherein a first contact segment region of one of the conductive films is connected to a first contact region of the power semiconductor components by conductive connection, wherein a second contact segment region of one of the conductive films is connected to a contact region of the second conductor track by material bonding and conductive connection, such that a sub-segment region of the second contact segment region does not have a material bonding connection, wherein a terminal element is connected to one of the conductive films by a terminal element contact region within the range of the second contact segment region by material bonding and conductive connection, and wherein the sub-segment region and the terminal element contact region are aligned with each other in the normal direction and at least partially overlap each other in the process.

[0005] With this configuration, the mechanical load of the material bond between the connecting device and the second conductor track is locally reduced and thus the total load is distributed over a larger area.

[0006] It may be advantageous that, when viewed in the normal direction, the terminal element contact area is completely arranged within the sub-segment area, and preferably the area of ​​the sub-segment area is at least 50% larger than the area of ​​the terminal element contact area, particularly at least 100% larger.

[0007] As an alternative, it may be advantageous that, when viewed in the normal direction, the terminal element contact area covers up to 90%, preferably up to 80%, of the sub-segment area.

[0008] Ideally, when viewed in the normal direction, the sub-section region should be completely surrounded by the second contact section region.

[0009] In principle, it is preferred that the thickness of the conductive film is between 10 μm and 500 μm, more preferably between 50 μm and 250 μm, and the thickness of the electrically insulating film is between 2 μm and 200 μm, more preferably between 10 μm and 100 μm.

[0010] On the one hand, it may be preferred that the terminal element be in the form of a pin contact element or a press-pin contact element.

[0011] However, on the other hand, it may also be preferred that the terminal element be in the form of a sleeve in which a contact element is arranged, the contact element being in the form of a pin contact element or a press-pin contact element, wherein the outer edge of the contact area of ​​the sleeve facing the substrate forms the edge of the terminal element contact area.

[0012] In this configuration, the contact element can be arranged in a section within the sleeve and can be connected to the sleeve in a force-fit and conductive manner. The sleeve can also have a basic shape of a hollow cylinder or cup, and preferably has additional, preferably structured, base elements.

[0013] Preferably, the connection of the corresponding materials is in the form of a brazed joint or a welded joint, especially in the form of a laser-welded joint, or in the form of a sintered joint or an adhesive joint.

[0014] Furthermore, it may be advantageous for a sub-housing or housing to surround or enclose the substrate, wherein a first segment of the terminal element protrudes from the housing or sub-housing, and wherein a second segment is preferably fixedly arranged within the housing or sub-housing.

[0015] Of course, unless they are excluded or explicitly excluded, features mentioned in the singular, particularly power semiconductor components and connecting elements, can also exist in the power electronic switching device according to the invention in the plural form.

[0016] It goes without saying that the various configurations of the present invention can be implemented individually or in any desired combination to achieve improvements. In particular, without departing from the scope of the invention, the features mentioned and explained above and below can be used not only in the specified combinations, but also in other combinations or individually. Attached Figure Description

[0017] Further explanation, advantageous details and features of the invention arise from the following references Figures 1 to 7 The exemplary embodiments of the invention or corresponding portions thereof are illustrated schematically in the figures.

[0018] Figure 1 A side view of a power electronic switching device according to the prior art is shown.

[0019] Figure 2 A side view showing a first configuration of the power electronic switching device according to the present invention is provided.

[0020] Figure 3 A side view showing a second configuration of the power electronic switching device according to the present invention is provided.

[0021] Figure 4 The sleeve of the second configuration of the power electronic switching device is shown.

[0022] Figures 5 to 7 Various configurations of the second contact segment region and sub-segment region are shown. Detailed Implementation

[0023] Figure 1 A side view of a power electronic switching device 1 according to the prior art is shown. The switching device 1 has a substrate 2 with an insulator 20 and first and second conductor tracks 22, 24 disposed thereon. A power semiconductor component 5 is disposed on the first conductor track 22 of the substrate 2 and is electrically connected to the conductor track through its contact area facing the first conductor track 22. Without any general limitation, this conductive connection 400 is here in the form of a pressure-bonded material bond.

[0024] The power semiconductor component 5, more precisely, the contact area of ​​the power semiconductor component 5 facing away from the substrate 2 in its normal direction N, is connected to the second conductor track 24 of the substrate 2 via a connecting device 3. This connecting device 3 is in the form of a film composite consisting of a first conductive film 30 facing the substrate 2, an electrically insulating film 32 following within the film composite, and a second conductive film 34 further following within the film composite. A first contact segment region of one of the conductive films is connected to the first contact area of ​​the power semiconductor component 5 via a conductive connection 402.

[0025] The power electronic switching device 1 also has a terminal element 8, more precisely an auxiliary terminal element in this case, for conducting auxiliary potentials, such as sensor signals or drive signals. This terminal element 8 is in the form of a spring element conventional in the art. The base of this spring element has a force-fit connection to a contact section on the surface of the first conductive film 30 facing away from the substrate 2.

[0026] The first conductive film 30 is connected to the second conductor track 24 of the substrate 2 by a material-bonded and conductive connection 420, in this case in the form of pressure sintering bonding as is common in the art.

[0027] Figure 2 A side view showing a first configuration of the power electronic switching device 1 according to the present invention is provided. The basic configuration of the substrate 2 together with the power semiconductor component 5 and the connection device 3 corresponds to the prior art, such as for Figure 1 As stated above.

[0028] The connecting device 3 configured as a membrane composite has a first conductive film 30, a second conductive film 34, and an electrically insulating film 32. The first conductive film 30 and the second conductive film 34 each have a thickness of 200 μm, and the electrically insulating film 32 has a thickness of 80 μm.

[0029] Terminal element 6, also an auxiliary terminal element, in this case takes the form of a pin contact element 60, for plug-in or solder connection with a corresponding component of the control PCB (not shown) used to drive the power electronic switching device 1. For connection to the connection device 3, terminal element 6 has a base element 602, which is arranged on the first conductive film 30 via a material-bonded and conductive connection 460. In this case, the material-bonded and conductive connection 460 takes the form of a solder joint. In this case, the terminal element contact area 600 of terminal element 6 facing the substrate 2 is electrically connected via this solder joint to the third contact segment area 340 of the second conductive film 34 facing away from the surface of the substrate 2.

[0030] Furthermore, a material-bonded and conductive connection 440 between the connecting device 3 and the second conductor track 24 is shown. In this case, the second contact segment region 300 of the conductive film 30 is connected to the contact region 240 of the second conductor track 24 via the material-bonded and conductive connection 440. In this case, it is also a pressure sintering bond. In this case, only the edge region 304 of the sub-segment region 302 surrounding the second contact segment region 300 has a material-bonded connection, but the sub-segment region 302 itself does not have a material-bonded connection. Within the connection, more precisely within its sintered layer, the release region 442 extends here. Due to the pressure acting on the terminal element 6 in the negative normal direction N, this release region 442 can be very small during the use of the switching device 1, and in this case, the sub-segment region 302 can be in direct and conductive contact with the second conductor track 24.

[0031] In this case, when viewed in the normal direction N, the terminal element contact area 600 of the terminal element 6 and the sub-segment area 302 are aligned, wherein the terminal element contact area 600 is completely arranged within the sub-segment area 302, as shown in the reference. Figure 5 Furthermore, the area of ​​sub-segment region 302 is at least 80% larger than the area of ​​terminal element contact region 600.

[0032] Figure 3 A side view of a second configuration of the power electronic switching device 1 according to the present invention is shown. The configuration of the substrate 2 together with the power semiconductor component 5 and the connection device 3 corresponds in principle to the configuration for... Figure 2 As described.

[0033] Conversely, the terminal element 6 is in the form of a cup-shaped sleeve 62, in which a contact element 64 is arranged. The contact element 64 is in the form of a press-fit contact element. The contact element 64 is arranged in a section within the sleeve 62 and is connected to the sleeve 62 in a force-fit and conductive manner.

[0034] The section of sleeve 62 facing substrate 2 has a base element 624, as shown in the figure. Figure 4 The base element of the sleeve 62 is connected to the surface of the first conductive film 30 facing away from the substrate 2 in a material-bonded and conductive manner via a conductive connection 462, in which case the conductive connection 462 is in the form of a brazed joint. For this purpose, the electrically insulating film 32 and the second conductive film 34 have a common cutout 310 for arranging the sleeve therein.

[0035] Therefore, through this connection 642, the terminal element contact area 600 (in this case, its sleeve 62) of the terminal element 6 facing the substrate 2 is electrically connected to the third contact segment area 340 of the first conductive film 30 facing away from the surface of the substrate 2.

[0036] Furthermore, a conductive and material-bonded connection 440 between the connecting device 3 and the second conductor track 24 is shown, which in principle is with... Figure 2 The one shown has a similar structure. In this case, the sub-segment region 302 of the second contact segment region 300 of the connecting device 3 also does not have a material bonded connection, but extends from the region 442 where it is released, in the form of a sintered layer connection.

[0037] When viewed along the normal direction N, the terminal element contact area 600 and sub-segment area 302 of terminal element 6 are aligned again, wherein... Figure 2 Conversely, when viewed along the normal direction N, the terminal element contact area 600 here covers 85% of the sub-segment area 302.

[0038] Furthermore, a housing 7 is shown, but only in section, surrounding the substrate 2. The housing 7 has a housing cutout 70 through which the terminal element 6 protrudes. This first section of the terminal element 6 protruding from the housing 7 serves as an external connection for the switching device 1. Without any general limitation, a second section of the terminal element 6 is here fixedly arranged in the cutout 70 by an adhesive bonding 72.

[0039] Figure 4 A second configuration of the sleeve for the power electronic switching device 1 with a hollow cylindrical section 622 is shown. Furthermore, two variations of the base element 624 are shown, with or without an additional structure 628 having a contact surface 626, the outer edge of which forms the edge of the terminal element contact region 600, thus surrounding the contact surface 626. This contact surface 626 is designed and intended to be bonded to the surface of the conductive films 30, 34 of the connecting device 3 facing away from the substrate 2 by a brazing joint, as shown in Figure 3. Figure 3 .

[0040] Figures 5 to 7 Various configurations of the second contact segment region 300 and sub-segment region 302 are shown, each viewed from the normal direction N, which in this case is a view from outside the plane of the figure. Similar details of the conductive connection 440 between the second conductor track 24 and the connecting device 3 are shown respectively, with reference to... Figure 2 Each of these has a release area 442, i.e., an area without any bonding material. This release area 442 corresponds to or is aligned with a sub-segment region 302 of the second contact segment region 300. Furthermore, a terminal element contact area 600 is shown, which has no release material, even in... Figure 4 In the case of sleeve 62 shown, there is no release, and therefore it always exists in the form of a completely filled area.

[0041] In each case, the contact areas 600 of these terminal elements are aligned with the conductive connection 460 between the terminal element and the connecting device 3 and its third contact segment area 340.

[0042] Figure 5 The configuration shown is such that, when viewed in the normal direction N, the terminal element contact area 600 is completely arranged within the sub-segment area 302, and the area of ​​the sub-segment area 302 is three times the area of ​​the terminal element contact area 600. Furthermore, the edge of the terminal element contact area 600 has a minimum spacing 444 with the edge of the sub-segment area 302, which is greater than 10% of the diameter of the sub-segment area 302.

[0043] Figure 6 and Figure 7 Different exemplary configurations are shown, in which, in each case, the terminal element contact area 600 partially, but never completely, overlaps with the sub-segment area 302 and has an overlapping area 466.

Claims

1. A power electronic switching device (1), characterized in that, The power electronic switching device (1) comprises: a terminal element (6); a substrate (2) having a normal direction (N) and a first conductor track (22) and a second conductor track (24), wherein a power semiconductor component (5) is arranged on the first conductor track (22) via a conductive connection (400); and a connecting device (3) composed of a film composite having a first conductive film (30) facing the substrate (2), an electrically insulating film (32) following the film composite, and a second conductive film (34) further following the film composite, wherein a first contact segment region of one of the conductive films is connected to a first contact region of the power semiconductor component (5) via a conductive connection (402), wherein the conductive film The second contact segment region (300) of one of (30, 34) is connected to the contact region (240) of the second conductor track (24) by a material bond and conductive connection (440), such that the sub-segment region (302) of the second contact segment region (300) does not have a material bond connection, wherein the terminal element (6) is connected to one of the conductive films (30, 34) by a material bond and conductive connection (460) through the terminal element contact region (600) in the range of the second contact segment region (300), and wherein the sub-segment region (302) and the terminal element contact region (600) are aligned with each other in the normal direction (N) and at least partially overlap each other during the alignment process.

2. The power electronic switching device according to claim 1, characterized in that: When viewed in the normal direction (N), the terminal element contact area (600) is completely arranged within the sub-segment area (302).

3. The power electronic switching device according to claim 1, characterized in that: When viewed along the normal direction (N), the terminal element contact area (600) covers up to 90% of the sub-segment area (302).

4. The power electronic switching device according to any one of claims 1-3, characterized in that: When viewed along the normal direction (N), the sub-segment region (302) is completely surrounded by the second contact segment region (300).

5. The power electronic switching device according to any one of claims 1-3, characterized in that: The corresponding thicknesses of the conductive films (30, 34) are between 10 μm and 500 μm, and the thickness of the electrically insulating film (32) is between 2 μm and 200 μm.

6. The power electronic switching device according to any one of claims 1-3, characterized in that: The terminal element (6) is in the form of a pin contact element (60).

7. The power electronic switching device according to any one of claims 1-3, characterized in that: The terminal element (6) is in the form of a sleeve (62) in which a contact element is arranged, the contact element being in the form of a pin contact element, wherein the contact surface (626) of the sleeve (62) faces the outer edge of the substrate (2) to form the edge of the terminal element contact area (600).

8. The power electronic switching device according to claim 7, characterized in that: The contact element (64) is arranged in a section (622) in the sleeve (62) and is connected thereto in a force-fitting and conductive manner.

9. The power electronic switching device according to claim 8, characterized in that: The sleeve (62) has a basic cup-shaped shape.

10. The power electronic switching device according to any one of claims 1-3, characterized in that: The corresponding material connections (440, 460) are in the form of welded joints, sintered joints, or adhesive joints.

11. The power electronic switching device according to any one of claims 1-3, characterized in that: The housing (7) surrounds or encloses the substrate (2), and a first section of the terminal element (6) protrudes beyond the housing (7).

12. The power electronic switching device according to claim 2, characterized in that: The area of ​​the sub-segment region (302) is at least 50% larger than the area of ​​the terminal element contact region (600).

13. The power electronic switching device according to claim 3, characterized in that: When viewed along the normal direction (N), the terminal element contact area (600) covers up to 80% of the sub-segment area (302).

14. The power electronic switching device according to claim 5, characterized in that: The corresponding thicknesses of the conductive films (30, 34) are between 50 μm and 250 μm.

15. The power electronic switching device according to claim 5, characterized in that: The thickness of the electrically insulating film (32) is between 10 μm and 100 μm.

16. The power electronic switching device according to claim 9, characterized in that: The sleeve (62) has an additional base element (624).

17. The power electronic switching device according to claim 16, characterized in that: The base element (624) is a structured base element (624).

18. The power electronic switching device according to claim 10, characterized in that: The corresponding material connections (440, 460) are in the form of laser-welded joints.

19. The power electronic switching device according to claim 11, characterized in that: The second section of the terminal element (6) is fixedly arranged in the housing.

20. The power electronic switching device according to claim 6, characterized in that: The terminal element (6) is in the form of a press-pin contact element.

21. The power electronic switching device according to claim 7, characterized in that: The contact element is in the form of a press-fit contact element (64).

22. The power electronic switching device according to claim 8, characterized in that: The sleeve (62) has a basic shape of a hollow cylinder.

23. The power electronic switching device according to any one of claims 1-3, characterized in that: The corresponding material connections (440, 460) are in the form of brazed joints.

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