Method of reducing chamber residue
CN113994023BActive Publication Date: 2026-06-09APPLIED MATERIALS INC
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2020-04-24
- Publication Date
- 2026-06-09
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Figure CN113994023B_ABST
Abstract
The present disclosure relates to systems and methods for reducing formation of hardware residues and minimizing secondary plasma formation during substrate processing in a processing chamber. The processing chamber can include a gas distribution member configured to flow a first gas into a processing volume and generate a plasma from the first gas. A second gas is supplied into a lower region of the processing volume. Further, an exhaust port is disposed in the lower region to remove excess gas or byproducts from the processing volume during or after processing.
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