Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus includes: an opposing member having a circular plate portion with an opposing surface that opposes a substrate held by a substrate holding unit from above, and an extension portion that extends outward in a radial direction from the circular plate portion about a vertical axis; a ring-shaped member that surrounds the substrate held by the substrate holding unit in plan view; and an opposing member lifting unit that lifts the opposing member together with the ring-shaped member in a manner that divides a cutoff space that is restricted from inflow of ambient gas from the outside by the substrate, the opposing member, and the ring-shaped member. The ring-shaped member has a guide surface that guides processing liquid present on an upper surface of the substrate outward in the radial direction toward a peripheral portion of the substrate by centrifugal force when the substrate held by the substrate holding unit is rotated by a substrate rotating unit. A processing liquid discharge path that discharges processing liquid present on the guide surface outward of the cutoff space is divided by the extension portion and the ring-shaped member.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method for processing substrates. Substrates that can be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for FPD (Flat Panel Display) devices such as organic EL (Electroluminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for optical disc drives, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. Background Technology

[0002] When treating the surface of a substrate with a chemical solution or other treatment liquid, there is a concern that oxygen dissolved in the treatment liquid may oxidize the patterns formed on the substrate surface. To suppress pattern oxidation, it is necessary to reduce the oxygen concentration of the ambient gas near the substrate surface.

[0003] Therefore, Patent Document 1 discloses a method to reduce the oxygen concentration of ambient gas near the upper surface of the substrate by setting a blocking member opposite to the upper surface of the substrate held in a rotating chuck and filling the space between the blocking member and the substrate with nitrogen gas.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: U.S. Patent Application Publication No. 2015 / 14610009 Summary of the Invention

[0007] Patent Document 1 describes a substrate processing apparatus that includes a shielding member comprising a circular plate portion facing the upper surface of the substrate and a cylindrical portion extending downward from the outer periphery of the circular plate portion. By surrounding the substrate with the cylindrical portion, it is easy to reduce the oxygen concentration of the ambient gas near the upper surface of the substrate using nitrogen gas. If processing liquid is supplied to the upper surface of the substrate while the substrate is surrounded by the cylindrical portion, the processing liquid on the substrate splashes outward from the periphery of the upper surface and is received by the cylindrical portion. Therefore, there is a concern that processing liquid rebounding from the cylindrical portion may re-adhere to the periphery of the upper surface of the substrate, generating particles.

[0008] Therefore, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce the oxygen concentration in the ambient gas near the upper surface of the substrate and suppress the generation of particles on the upper surface of the substrate.

[0009] One embodiment of the present invention provides a substrate processing apparatus, comprising: a substrate holding unit for holding a substrate horizontally; a substrate rotating unit for rotating the substrate holding unit about a vertical axis passing through the center of the substrate held by the substrate holding unit; a processing liquid supply unit for supplying processing liquid toward the upper surface of the substrate held by the substrate holding unit; an inactive gas supply unit for supplying inactive gas toward the upper surface of the substrate held by the substrate holding unit; an opposing member having a circular plate portion having an opposing surface facing the substrate held by the substrate holding unit from above, and an extension portion extending radially outward from the circular plate portion about the vertical axis; an annular member surrounding the substrate held by the substrate holding unit when viewed from above; and an opposing member lifting unit for lifting the opposing member and the annular member together in such a way that the substrate held by the substrate holding unit, the opposing member, and the annular member divide a shielding space that restricts the inflow of ambient gas from the outside.

[0010] The annular member has a guiding surface that, when the substrate rotating unit rotates the substrate held by the substrate holding unit, uses centrifugal force to guide the processing liquid present on the upper surface of the substrate toward the radially outward periphery of the substrate. Then, the extension portion and the annular member define a processing liquid discharge path that discharges the processing liquid present on the guiding surface to the outside of the shielding space.

[0011] According to this device, by raising and lowering the opposing member and the annular member together, a shielding space is divided using a substrate, the opposing member, and the annular member. With the shielding space divided, supplying an inert gas towards the upper surface of the substrate displaces the ambient gas within the shielding space with an inert gas. This reduces the oxygen concentration within the shielding space, i.e., the oxygen concentration of the ambient gas near the upper surface of the substrate. Since the shielding space restricts the inflow of ambient gas from the outside, once the ambient gas within the shielding space is replaced with an inert gas, it is easy to maintain a state where the oxygen concentration in the ambient gas within the shielding space is reduced.

[0012] When the ambient gas in the shielded space is replaced with an inactive gas, a processing liquid is supplied to the upper surface of the substrate. This allows the upper surface of the substrate to be treated with the processing liquid while suppressing the rise in oxygen concentration in the processing liquid.

[0013] The guiding surface of the annular member utilizes the centrifugal force based on the rotation of the substrate to guide the processing liquid present on the upper surface of the substrate radially outward compared to the periphery of the substrate. The processing liquid moving to the guiding surface then prevents splashing from the substrate and is guided to the processing liquid discharge path and discharged outside the shielding space. Since a guiding surface exists between the periphery of the substrate and the processing liquid discharge path, the periphery of the substrate is sufficiently separated from the extension portion of the opposing member. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from rebounding from the opposing member and re-adhering to the upper surface of the substrate. Assuming that the processing liquid discharged from the upper surface of the substrate rebounds from the opposing member, most of it adheres to the guiding surface located radially outward compared to the upper surface of the substrate. Therefore, it is possible to prevent the processing liquid from re-adhering to the upper surface of the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

[0014] The results show that the oxygen concentration in the ambient gas near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

[0015] In one embodiment of the present invention, the width of the processing liquid discharge path is smaller than the width of the blocking space in the vertical direction. Therefore, the flow rate of the fluid passing through the processing liquid discharge path is relatively small. Thus, during the period when the processing liquid is discharged out of the blocking space via the processing liquid discharge path, the inflow of ambient gas from outside the blocking space via the processing liquid discharge path can be suppressed. Therefore, the upper surface of the substrate can be treated with the processing liquid while suppressing the increase in oxygen concentration in the processing liquid.

[0016] In one embodiment of the present invention, the annular member has a discharge path dividing surface, which is connected to the outer end of the radially directed guide surface to divide the treatment liquid discharge path. Then, the treatment liquid discharge path has an inlet at the boundary between the guide surface and the discharge path dividing surface.

[0017] Sometimes, the processing fluid collides with the extension portion near the inlet of the processing fluid discharge path. Backflow (flow of processing fluid tending towards the radially inward direction of the substrate) occurs in the processing fluid colliding with the extension portion. In configurations without guide surfaces, the inlet of the processing fluid discharge path is located near the periphery of the upper surface of the substrate; therefore, there is concern about backflow of processing fluid onto the substrate. If backflow occurs, the processing fluid tending towards the radially inward direction collides with the processing fluid tending towards the radially outward direction, raising concerns about processing fluid splashing within the shielding space. If the processing fluid splashed into the shielding space re-adheres to the upper surface of the substrate, particles will be generated on the substrate.

[0018] Therefore, if the inlet of the processing liquid discharge path is located at the boundary between the discharge path dividing surface and the guide surface, which is connected to the outer end of the radially extending guide surface, then the location where backflow occurs in the processing liquid is on the guide surface. Therefore, backflow in the processing liquid on the substrate can be suppressed. Therefore, particle generation on the upper surface of the substrate can be suppressed.

[0019] In one embodiment of the present invention, the discharge path dividing surface and the guide surface constitute a single flat surface that is flat in the horizontal direction. When there is a layer difference between the guide surface and the discharge path dividing surface, there is a concern that the processing liquid, which rebounds due to the layer difference, may adhere to the substrate and then re-adhere to the upper surface of the substrate. Therefore, there is a concern about the generation of particles on the upper surface of the substrate.

[0020] Therefore, if there is no layer difference between the guide surface and the discharge path dividing surface, and the guide surface and the discharge path dividing surface form a single flat surface in the horizontal direction, the processing liquid flowing over the guide surface can smoothly flow into the processing liquid discharge path. Thus, it is possible to suppress processing liquid splashing within the shielded space and to suppress the generation of particles caused by processing liquid splashing.

[0021] In one embodiment of the invention, a counter-member rotation unit is further included, which rotates the counter-member and the annular member together about the vertical axis synchronously with the substrate held by the substrate holding unit. Synchronous rotation means rotating in the same direction at the same rotational speed. When the rotational speed of the substrate differs significantly from that of the counter-member and the annular member, there is concern about airflow turbulence within the shielding space. If airflow turbulence occurs within the shielding space, the blowing force of the airflow acts on the processing liquid on the upper surface of the substrate, causing partial exposure of the upper surface of the substrate or splashing of the processing liquid within the shielding space. Therefore, by employing a configuration in which the substrate, the annular member, and the counter-member that divide the shielding space rotate synchronously, airflow turbulence within the shielding space can be suppressed.

[0022] In one embodiment of the invention, the substrate processing apparatus further includes a plurality of connecting members that connect the annular member and the opposing member. Each of the connecting members, viewed from above, is formed such that it tends towards the downstream side of the rotational direction of the substrate held by the substrate holding unit as it tends towards the radially outward direction.

[0023] Within the blocked space, airflow tends to flow downstream in a direction of rotation as it moves radially outward. Therefore, according to this device, multiple connecting members linking the opposing member and the annular member are formed, in plan view, in a manner that tends to flow downstream in a direction of rotation as it moves radially outward. This promotes the generation of airflow that flows downstream in a direction of rotation as it moves radially outward. Consequently, turbulence in the airflow within the blocked space can be further suppressed.

[0024] In one embodiment of the present invention, the substrate processing apparatus further includes a controller that controls the substrate rotation unit, the processing liquid supply unit, the inactive gas supply unit, and the opposing member lifting unit.

[0025] Then, the controller is programmed to perform the following steps: a blocking space division step, which divides the blocking space by moving the opposing member and the annular member using the opposing member lifting unit; an ambient gas replacement step, which replaces the ambient gas in the blocking space with an inactive gas by supplying an inactive gas from the inactive gas supply unit toward the upper surface of the substrate; a processing liquid supply step, which supplies processing liquid from the processing liquid supply unit to the upper surface of the substrate while the ambient gas in the blocking space has been replaced by the inactive gas; and a processing liquid discharge step, which rotates the substrate by the substrate rotating unit and discharges the processing liquid on the upper surface of the substrate out of the blocking space via the guide surface and the processing liquid discharge path.

[0026] Therefore, the ambient gas within the shielding space can be reliably replaced by an inactive gas. This reduces the oxygen concentration within the shielding space, i.e., the oxygen concentration of the ambient gas near the upper surface of the substrate. Then, by rotating the substrate, centrifugal force acts on the processing liquid present on the upper surface of the substrate, reliably discharging the processing liquid from the upper surface of the substrate outside the shielding space via the guide surface and the processing liquid discharge path. Therefore, processing liquid splashing within the shielding space can be suppressed while simultaneously removing the processing liquid from the shielding space. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from rebounding from the opposing member and re-adhering to the upper surface of the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

[0027] The results show that the oxygen concentration in the ambient gas near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

[0028] In one embodiment of the invention, the guide surface has an inclined surface that tends to rise as it moves toward the radially outward side.

[0029] Then, the controller is programmed to perform the following steps: in the processing liquid supply step, a liquid accumulation step is performed by supplying processing liquid to the upper surface of the substrate held by the substrate holding unit, and the processing liquid is received by the inclined surface and the upper surface of the substrate to form a liquid accumulation; and in the processing liquid discharge step, a liquid accumulation discharge step is performed by accelerating the rotation of the substrate using the substrate rotation unit to discharge the liquid accumulation from the upper surface of the substrate.

[0030] According to this apparatus, a processing liquid is supplied to the upper surface of a substrate, thereby forming an accumulation of the processing liquid on the inclined surface and the upper surface of the substrate. Therefore, since the processing liquid is not discharged to the outside of the substrate, the upper surface of the substrate can be treated using only the amount of processing liquid required to form the accumulation. Thus, the consumption of processing liquid can be reduced.

[0031] The inclined surface slopes upwards in a radially outward direction. Therefore, by accelerating the rotation of the substrate, centrifugal force is applied to the accumulated liquid, allowing the processing liquid to rise smoothly on the inclined surface. The processing liquid rising on the inclined surface flows smoothly into the processing liquid discharge path. Thus, the generation of particles on the upper surface of the substrate can be suppressed.

[0032] Another embodiment of the present invention provides a substrate processing method, comprising: a substrate holding step of holding a substrate that is circular in plan view horizontally; a space dividing step of moving a counter member having a circular plate portion and an extension portion, and an annular member surrounding the substrate in plan view in a vertical direction, thereby dividing a shielding space by means of the counter member, the annular member, and the substrate to restrict the inflow of ambient gas from the outside, wherein the circular plate portion has a counter surface facing the substrate from above, and the extension portion extends radially outward from the circular plate portion about a vertical axis passing through the center of the substrate; and supplying non- An environmental gas replacement process in which an inactive gas is used to replace the ambient gas in the shielded space with an active gas; a processing liquid supply process in which a processing liquid is supplied to the upper surface of the substrate while the ambient gas in the shielded space has been replaced by an inactive gas; and a processing liquid discharge process in which the substrate is rotated in a rotational direction about the vertical axis while the processing liquid is present on the upper surface of the substrate, thereby guiding the processing liquid present on the periphery of the upper surface of the substrate through a guide surface provided on the annular member to a processing liquid discharge path divided by the extension portion and the annular member, and discharging the processing liquid from the processing liquid discharge path to the outside of the shielded space.

[0033] According to this method, a shielding space is divided using a substrate, a counter member, and a ring member by raising and lowering the annular member and the counter member. With the shielding space divided, an inert gas is supplied toward the upper surface of the substrate, allowing the ambient gas within the shielding space to be replaced by the inert gas. This reduces the oxygen concentration within the shielding space, i.e., the oxygen concentration of the ambient gas near the upper surface of the substrate. Since the shielding space restricts the inflow of ambient gas from the outside, once the ambient gas within the shielding space is replaced with an inert gas, it is easy to maintain a state where the oxygen concentration in the ambient gas within the shielding space is reduced.

[0034] When the ambient gas in the shielded space is replaced with an inactive gas, a processing liquid is supplied to the upper surface of the substrate. This allows the upper surface of the substrate to be treated with the processing liquid while suppressing the rise in oxygen concentration in the processing liquid.

[0035] The processing liquid present on the upper surface of the substrate is subjected to centrifugal force based on the rotation of the substrate, moving from the periphery of the upper surface of the substrate and guided to the processing liquid discharge path via the guide surface. The processing liquid guided to the processing liquid discharge path is discharged outside the shielding space. Since there is a guide surface between the periphery of the substrate and the processing liquid discharge path, the periphery of the substrate is sufficiently separated from the extension portion of the opposing member. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from rebounding from the opposing member and re-adhering to the upper surface of the substrate. Assuming that the processing liquid discharged from the upper surface of the substrate rebounds from the opposing member, most of it also adheres to the guide surface located radially outward compared to the upper surface of the substrate. Therefore, it is possible to prevent the processing liquid from re-adhering to the upper surface of the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

[0036] The results show that the oxygen concentration in the ambient gas near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

[0037] In another embodiment of the invention, the width of the processing liquid discharge path is smaller than the width of the blocking space in the vertical direction. Therefore, the flow rate of the fluid passing through the processing liquid discharge path is relatively small. Thus, during the period when the processing liquid is discharged out of the blocking space via the processing liquid discharge path, the inflow of ambient gas from outside the blocking space via the processing liquid discharge path can be suppressed. Therefore, the upper surface of the substrate can be treated with the processing liquid while suppressing the increase in oxygen concentration in the processing liquid.

[0038] In another embodiment of the invention, the annular member has a discharge path dividing surface that connects to the outer end of the radially directed guide surface, dividing the treatment fluid discharge path. The treatment fluid discharge path then has an inlet at the boundary between the guide surface and the discharge path dividing surface.

[0039] According to this method, the inlet of the processing liquid discharge path is located at the boundary between the discharge path dividing surface and the guide surface, which is connected to the outer end of the radially directed guide surface. Therefore, the location of backflow in the processing liquid is not on the upper surface of the substrate, but on the guide surface. Therefore, backflow in the processing liquid on the substrate can be suppressed. Therefore, particle generation on the upper surface of the substrate can be suppressed.

[0040] In another embodiment of the invention, the discharge path dividing surface and the guide surface constitute a single flat surface that is flat in the horizontal direction. According to this method, there is no layer difference between the guide surface and the discharge path dividing surface, thus making the guide surface and the discharge path dividing surface a single flat surface that is flat in the horizontal direction. Therefore, the processing liquid flowing over the guide surface can smoothly flow into the processing liquid discharge path. Therefore, it is possible to suppress processing liquid splashing within the shielding space and to suppress the generation of particles caused by processing liquid splashing.

[0041] In another embodiment of the present invention, the substrate processing method further includes a synchronous rotation step in the process liquid discharge step, wherein the annular member and the opposing member rotate synchronously with the substrate around the vertical axis. Therefore, turbulence in the airflow within the shielded space can be suppressed.

[0042] In another embodiment of the invention, the annular member and the opposing member are connected by a connecting member, which, in plan view, is formed such that it tends towards the downstream side of the rotational direction of the substrate as it tends towards the radially outward direction. Therefore, it is possible to promote the generation of airflow that tends towards the downstream side of the rotational direction as it tends towards the radially outward direction. Thus, it is possible to further suppress airflow turbulence within the shielding space.

[0043] In another embodiment of the invention, the guide surface has an inclined surface that slopes upwards as it tends toward the radially outward direction. The processing liquid supply process includes a liquid accumulation formation process, in which processing liquid is supplied to the upper surface of the substrate, and the processing liquid is received by the inclined surface and the upper surface of the substrate to form a liquid accumulation. The processing liquid discharge process includes a liquid accumulation discharge process in which the liquid accumulation is discharged from the upper surface of the substrate by accelerating the rotation of the substrate.

[0044] According to this method, a processing liquid is supplied to the upper surface of the substrate, thereby forming an accumulation of the processing liquid on the inclined surface and the upper surface of the substrate. Therefore, since the processing liquid does not drain to the outside of the substrate, the upper surface of the substrate can be treated with the amount of processing liquid required to form the accumulation. Thus, the consumption of processing liquid can be reduced.

[0045] The inclined surface slopes upwards in a radially outward direction. Therefore, by accelerating the rotation of the substrate, centrifugal force is applied to the accumulated liquid, allowing the processing liquid to rise smoothly on the inclined surface. The processing liquid rising on the inclined surface flows smoothly into the processing liquid discharge path. Thus, the generation of particles on the upper surface of the substrate can be suppressed.

[0046] In another embodiment of the invention, the inner end face of the radially oriented annular member extends in the vertical direction. The upper end of the inner end face is connected to the guide surface. The processing liquid supply process then includes a liquid accumulation formation process, in which processing liquid is supplied toward the upper surface of the substrate while the annular member is moved such that the upper end of the inner end face of the annular member is positioned above the upper surface of the substrate. Thus, a liquid accumulation of processing liquid is formed by receiving the processing liquid using the inner end face of the annular member and the upper surface of the substrate. The processing liquid discharge process includes a liquid discharge process, in which the liquid accumulation is discharged from the upper surface of the substrate by moving the annular member such that the upper end of the inner end face of the annular member is at the same height as the upper surface of the substrate.

[0047] According to this method, a processing liquid is supplied to the upper surface of the substrate, thereby forming an accumulation of the processing liquid on the inner end face of the annular member and the upper surface of the substrate. Therefore, the upper surface of the substrate is treated using the processing liquid in the accumulation. Thus, by supplying the amount of processing liquid required to form the accumulation to the upper surface of the substrate, the upper surface of the substrate can be treated. Therefore, compared to a configuration where the processing liquid supplied to the upper surface of the substrate is not received by the inner end face and is discharged outside the substrate, the consumption of processing liquid can be reduced.

[0048] If the annular member is moved such that the upper end of the inner face of the annular member is at the same height as the upper surface of the substrate, the processing liquid is released from the state of being received by the inner face. Therefore, the processing liquid present on the upper surface of the substrate can flow smoothly into the processing liquid discharge path. Thus, the generation of particles on the upper surface of the substrate can be suppressed.

[0049] In another embodiment of the invention, the substrate processing method further includes a shield moving step of individually moving the first shield and the second shield vertically. The first shield has a first cylindrical portion that surrounds the opposing member and the annular member in plan view, and a first annular portion that extends radially inward from the first cylindrical portion. The second shield has a second cylindrical portion that surrounds the opposing member and the annular member in plan view, and a second annular portion that extends radially inward from the second cylindrical portion and is opposed to the first annular portion from below. The processing liquid discharge path has a discharge port that discharges processing liquid radially outward. Then, the shield moving step includes a step of moving the first shield and the second shield such that, when the processing liquid is discharged from the discharge port, the processing liquid discharge path is located vertically between the inner end of the first annular portion and the inner end of the second annular portion in the radial direction.

[0050] According to this method, when the processing liquid is discharged from the outlet, the second annular portion of the second shield is located below the outlet in the vertical direction. Therefore, the processing liquid rebounded by the first shield does not move radially inward compared to the second shield, but adheres to the second shield. Thus, it is possible to suppress the processing liquid rebounded by the first shield from adhering to the lower surface of the substrate.

[0051] In another embodiment of the invention, the substrate processing method further includes a protective liquid supply step performed in parallel with the processing liquid discharge step, wherein a protective liquid protecting the lower surface of the substrate is supplied toward the lower surface of the substrate. Then, the shield moving step includes moving the second shield such that the radially inner end of the second annular portion is positioned below the discharge port and above the lower end of the annular member.

[0052] According to this method, a protective liquid is supplied to the lower surface of the substrate in parallel with the processing liquid discharge process. Therefore, when a mist of the processing liquid exceeds the second shield and reaches the vicinity of the lower surface of the substrate, the lower surface of the substrate can be protected relative to the mist.

[0053] Furthermore, the second shield is moved such that the inner end of the second annular portion in the radial direction is positioned below the outlet and above the lower end of the annular member. Therefore, the second shield can receive the protective liquid discharged from the lower surface of the substrate outwards. That is, the first shield can receive the processing liquid discharged from the upper surface of the substrate, and the second shield can receive the protective liquid discharged from the lower surface of the substrate outwards. Therefore, mixing of the processing liquid and the protective liquid discharged from the substrate can be avoided. Therefore, recycling can be performed without mixing the processing liquid and the protective liquid.

[0054] In another embodiment of the present invention, the substrate processing method further includes a pre-rinsing step of supplying rinsing liquid to the upper surface of the substrate before the processing liquid supply step. In the pre-rinsing step, the rinsing liquid supplied to the upper surface of the substrate blocks the gap between the annular member and the substrate and is discharged from the processing liquid discharge path. Furthermore, the pre-rinsing step is performed in parallel with the ambient gas replacement step.

[0055] The gap between the annular member and the substrate is blocked by the rinsing fluid. Therefore, the movement of inactive gas through this gap is suppressed. Furthermore, the rinsing fluid is discharged from the shielded space to the outside space via the processing fluid discharge path. Therefore, unless a very large force is applied to the rinsing fluid in the processing fluid discharge path, ambient gas will not flow into the shielded space via the processing fluid discharge path. On the other hand, since inactive gas is supplied to the shielded space, the air and rinsing fluid in the shielded space are discharged to the outside space together via the processing fluid discharge path in a manner that does not cause an excessive increase in pressure within the shielded space.

[0056] Therefore, it can further restrict the flow of ambient gas from the external space into the shielded space, and can replace the ambient gas in the shielded space with inactive gas.

[0057] The above or other objects, features and effects of the present invention will become apparent from the description of the embodiments that will be described below with reference to the accompanying drawings. Attached Figure Description

[0058] Figure 1 This is a schematic top view showing the layout of the substrate processing apparatus according to the first embodiment of the present invention.

[0059] Figure 2 This is a schematic partial cross-sectional view showing the general configuration of the processing unit of the substrate processing apparatus.

[0060] Figure 3 It is a cross-sectional view of the periphery of the extension portion of the opposing member of the processing unit.

[0061] Figure 4 It is along Figure 2 The cross-sectional view shown is along line IV-IV.

[0062] Figure 5 This is a block diagram showing the electrical structure of the main parts of the substrate processing apparatus.

[0063] Figure 6 This is a flowchart illustrating an example of substrate processing based on the substrate processing apparatus.

[0064] Figure 7A This is a schematic diagram illustrating the substrate processing.

[0065] Figure 7B This is a schematic diagram illustrating the substrate processing.

[0066] Figure 7C This is a schematic diagram illustrating the substrate processing.

[0067] Figure 7DThis is a schematic diagram illustrating the substrate processing.

[0068] Figure 7E This is a schematic diagram illustrating the substrate processing.

[0069] Figure 7F This is a schematic diagram illustrating the substrate processing.

[0070] Figure 8 This is a schematic diagram illustrating the situation of the processing liquid near the annular member in the substrate processing.

[0071] Figure 9 This is a schematic diagram illustrating the situation where the shield receives the processing liquid during the substrate processing.

[0072] Figure 10A This is a schematic diagram illustrating yet another example of substrate processing based on the substrate processing apparatus.

[0073] Figure 10B This is a schematic diagram illustrating yet another example of substrate processing based on the substrate processing apparatus.

[0074] Figure 11A This is a schematic diagram illustrating a modified example of the substrate processing apparatus.

[0075] Figure 11B This is a schematic diagram illustrating a modified example of the substrate processing apparatus.

[0076] Figure 12 This is a schematic partial cross-sectional view showing the general configuration of the processing unit of the substrate processing apparatus according to the second embodiment of the present invention.

[0077] Figure 13 This is a view from above of the periphery of the annular member of the processing unit in the second embodiment.

[0078] Figure 14 This is a schematic partial cross-sectional view showing the general configuration of the processing unit of the substrate processing apparatus according to the third embodiment of the present invention.

[0079] Figure 15 This is a cross-sectional view of the periphery of the opposing member and the annular member of the processing unit in the third embodiment.

[0080] Figure 16 This is a schematic diagram illustrating substrate processing using the substrate processing apparatus of the third embodiment.

[0081] Figure 17 This is a schematic diagram illustrating yet another example of substrate processing using the substrate processing apparatus of the third embodiment.

[0082] Figure 18 This is a schematic partial cross-sectional view showing the general configuration of the processing unit of the substrate processing apparatus according to the fourth embodiment of the present invention.

[0083] Figure 19 This is a schematic partial cross-sectional view showing the general configuration of the processing unit included in the substrate processing apparatus according to the fifth embodiment of the present invention.

[0084] Figure 20 This is a schematic diagram illustrating a modified example of a connecting structure linking the ring-shaped members. Detailed Implementation

[0085] <First Embodiment>

[0086] Figure 1 This is a schematic top view showing the layout of the substrate processing apparatus 1 according to the first embodiment of the present invention.

[0087] The substrate processing apparatus 1 is a leaf-type apparatus that processes substrates W, such as silicon wafers, one by one. In this embodiment, the substrate W is a circular substrate.

[0088] The substrate processing apparatus 1 includes: multiple processing units 2 that process substrates W using fluid; a loading port LP that holds a shelf C for accommodating multiple substrates W processed by the processing units 2; a transport robot IR and CR that transport the substrates W between the loading port LP and the processing units 2; and a controller 3 that controls the substrate processing apparatus 1.

[0089] A transport robot IR transports substrate W between the shelf C and a transport robot CR. The transport robot CR transports substrate W between the transport robot IR and the processing unit 2. Multiple processing units 2 have, for example, the same configuration. Detailed descriptions will follow later, but the processing fluid supplied to substrate W within the processing unit 2 includes pharmaceutical solutions, rinsing solutions, replacement solutions, etc.

[0090] Each processing unit 2 has a chamber 4 and a processing cup 7 disposed within the chamber 4, in which processing relative to the substrate W is performed. An input / output port (not shown) is formed in the chamber 4 for moving the substrate W into or out of the substrate W by a handling robot CR. The chamber 4 is equipped with a gate unit (not shown) for opening and closing the input / output port.

[0091] Figure 2 This is a schematic diagram illustrating an example of the configuration of the processing unit 2. The processing unit 2 includes a rotary chuck 5, an opposing member 6, a processing cup 7, an annular member 8, a central nozzle 11, a plurality of first lower surface nozzles 12, and a plurality of second lower surface nozzles 13.

[0092] The rotary chuck 5 holds the substrate W horizontally while rotating the substrate W about a vertical axis of rotation A1 passing through the center of the substrate W. The rotary chuck 5 includes a rotary base 21, a rotary shaft 22, and a rotary motor 23 that applies rotational force to the rotary shaft 22. The rotary shaft 22 is a hollow shaft. The rotary shaft 22 extends vertically along the rotation axis A1, which is a vertical axis passing through the center of the substrate W. The rotary base 21 is attached to the upper end of the rotary shaft 22. The rotary base 21 is externally fitted to the upper end of the rotary shaft 22. The upper surface of the rotary base 21 is circular when viewed from above. The diameter of the upper surface of the rotary base 21 is smaller than the diameter of the substrate W.

[0093] The rotary chuck 5 also includes an attraction unit 27, which attracts the substrate W disposed on the upper surface of the rotary base 21 in order to hold the substrate W in the rotary base 21.

[0094] A suction path 25 is inserted through the rotating base 21 and the rotating shaft 22. The suction path 25 has a suction port 24 exposed from the center of the upper surface of the rotating base 21. The suction path 25 is connected to a suction pipe 26. The suction pipe 26 is connected to a suction unit 27 such as a vacuum pump. A suction valve 28 for opening and closing the path is provided in the suction pipe 26.

[0095] The rotary chuck 5 is an example of a substrate holding unit for horizontally holding the substrate W. An eccentric sensor (not shown) can be used to accurately position the substrate W on the rotating base 21.

[0096] The rotating base 21 is rotated by rotating the rotating shaft 22 using a rotary motor 23. This causes the substrate W and the rotating base 21 to rotate together about the rotation axis A1. The rotary motor 23 is an example of a substrate rotation unit that rotates the substrate W about the rotation axis A1.

[0097] Hereinafter, the inner radial direction centered on the rotation axis A1 will be referred to as the "radial inner direction", and the outer radial direction centered on the rotation axis A1 will be referred to as the "radial outer direction".

[0098] The opposing member 6 includes a circular plate portion 65 that is opposed to the base plate W held in the rotating chuck 5 from above, and a flange-shaped (cylindrical) extension portion 66 that extends radially outward from the circular plate portion 65.

[0099] The circular plate portion 65 is formed in the shape of a circular plate having a diameter that is almost the same as or greater than that of the substrate W. The circular plate portion 65 has a facing surface 6a opposite to the upper surface (upper side surface) of the substrate W. The facing surface 6a is arranged above the rotary chuck 5 in a generally horizontal direction.

[0100] The extension portion 66 extends radially outward from the circular plate portion 65, and is therefore located radially outward compared to the periphery of the substrate W.

[0101] A hollow shaft 60 is fixed on the side opposite to the opposing surface 6a of the circular plate portion 65. A connecting hole 6b is formed in the portion of the circular plate portion 65 that overlaps with the axis of rotation A1 when viewed from above, penetrating vertically through the circular plate portion 65 and communicating with the internal space of the hollow shaft 60.

[0102] The central nozzle 11 is housed within the internal space of the hollow shaft 60 of the opposing member 6. The nozzle outlet 11a, located at the front end of the central nozzle 11, is positioned above and opposite the central region of the upper surface of the substrate W. The central region of the upper surface of the substrate W refers to the area on the upper surface of the substrate W that includes the center of rotation of the substrate W and its surrounding area.

[0103] The central nozzle 11 includes multiple pipes (first pipe 31, second pipe 32, third pipe 33, and fourth pipe 34) that spray fluid downwards, and a cylindrical housing 30 surrounding the multiple pipes. The multiple pipes and the housing 30 extend vertically along the axis of rotation A1. The outlet 11a of the central nozzle 11 is also the outlet of each pipe.

[0104] The first pipe 31 (central nozzle 11) is an example of a liquid supply unit that supplies a liquid such as DHF (diluted fluoride) to the upper surface of the substrate W. The second pipe 32 (central nozzle 11) is an example of a rinsing liquid supply unit that supplies a rinsing liquid such as DIW to the upper surface of the substrate W. The third pipe 33 (central nozzle 11) is an example of a displacement liquid supply unit that supplies a displacement liquid such as IPA to the upper surface of the substrate W. In other words, the central nozzle 11 is an example of a processing liquid supply unit that supplies processing liquids such as liquids, rinsing liquids, and displacement liquids to the upper surface of the substrate W.

[0105] The fourth pipe 34 (central nozzle 11) is an example of an inactive gas supply unit that supplies inactive gases such as nitrogen toward the upper surface of the substrate W.

[0106] The first pipe 31 is connected to the liquid medicine pipe 40, which guides the liquid medicine to the first pipe 31. If the liquid medicine valve 50 provided in the liquid medicine pipe 40 is opened, the liquid medicine is sprayed out continuously from the first pipe 31 (central nozzle 11) toward the central region of the upper surface of the substrate W.

[0107] The liquid sprayed from the first pipe 31 is not limited to DHF. That is, the liquid sprayed from the first pipe 31 can be a liquid including at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia, hydrogen peroxide solution, organic acid (e.g., citric acid, oxalic acid, etc.), organic base (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactant, and preservative. Examples of liquids that are mixtures of these include SPM (sulfuric acid / hydrogen peroxide mixture) and SC1 (ammonia-hydrogen peroxide mixture).

[0108] The second pipe 32 is connected to the upper flushing fluid pipe 41 that guides the flushing fluid to the second pipe 32. If the upper flushing fluid valve 51 provided in the upper flushing fluid pipe 41 is opened, the flushing fluid is sprayed out continuously from the second pipe 32 (central nozzle 11) toward the central region of the upper surface of the substrate W.

[0109] Examples of rinsing solutions include DIW, carbonated water, electrolyzed ionized water, hydrochloric acid with a dilution concentration (e.g., about 1 ppm to 100 ppm), ammonia with a dilution concentration (e.g., about 1 ppm to 100 ppm), and hydrogen-rich water.

[0110] The third pipe 33 is connected to the upper displacement fluid pipe 42 that guides the displacement fluid to the third pipe 33. If the upper displacement fluid valve 52 disposed in the upper displacement fluid pipe 42 is opened, the displacement fluid is continuously ejected from the third pipe 33 (central nozzle 11) toward the central region of the upper surface of the substrate W.

[0111] The replacement fluid sprayed from the third pipe 33 is a liquid used to replace the rinsing fluid on the upper surface of the substrate W. The replacement fluid is preferably a liquid with higher volatility compared to the rinsing fluid. The replacement fluid sprayed from the second pipe 32 is preferably miscible with the rinsing fluid.

[0112] The replacement fluid sprayed from the third pipe 33 is, for example, an organic solvent. Examples of replacement fluids sprayed from the third pipe 33 include liquids including at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and trans-1,2-dichloroethylene.

[0113] Furthermore, the replacement fluid ejected from the third pipe 33 does not need to consist solely of monomeric components; it can also be a liquid mixed with other components. For example, it can be a mixture of IPA and DIW, or a mixture of IPA and HFE.

[0114] The fourth pipe 34 is connected to the inactive gas pipe 43, which guides the inactive gas to the fourth pipe 34. If the inactive gas valve 53, which is located in the inactive gas pipe 43, is opened, the inactive gas is continuously ejected downward from the fourth pipe 34 (central nozzle 11).

[0115] The inactive gas ejected from the fourth pipe 34 is, for example, nitrogen (N2). The inactive gas is an inactive gas relative to the upper surface of the substrate W or a pattern formed on the upper surface of the substrate W. As an inactive gas, nitrogen is not limited to nitrogen; rare gases such as argon can also be used.

[0116] Figure 2 Only one first lower surface nozzle 12 is shown, but multiple first lower surface nozzles 12 are arranged at intervals from each other in the rotation direction R of the substrate W. The first lower surface nozzle 12 is an example of a lower-side rinsing liquid supply unit that supplies rinsing liquid such as DIW to the lower surface of the substrate W.

[0117] Multiple first lower surface nozzles 12 are respectively connected to multiple lower flushing fluid pipes 44 that guide flushing fluid to the first lower surface nozzles 12. If the lower flushing fluid valve 54 provided in the lower flushing fluid pipe 44 is opened, flushing fluid is continuously sprayed from the first lower surface nozzles 12 toward the outer peripheral region of the lower surface of the substrate W.

[0118] The outer peripheral region of the lower surface of substrate W refers to the annular region between the central region and the peripheral region of the lower surface of substrate W. The central region of the lower surface of substrate W refers to the region on the lower surface of substrate W including the center of rotation of substrate W and its surrounding area. The peripheral region of the lower surface of substrate W refers to the region including the periphery of the lower surface of substrate W and its surrounding area.

[0119] Examples of flushing fluids sprayed from the first lower surface nozzle 12 include the same flushing fluids sprayed from the second piping 32. Specifically, examples of flushing fluids sprayed from the first lower surface nozzle 12 include DIW, carbonated water, electrolyzed ionized water, hydrochloric acid with a dilution concentration (e.g., approximately 1 ppm to 100 ppm), ammonia with a dilution concentration (e.g., approximately 1 ppm to 100 ppm), and hydrogen-rich water.

[0120] Figure 2 Only one second lower surface nozzle 13 is shown, but multiple second lower surface nozzles 13 are arranged at intervals between each other in the rotation direction R of the substrate W. The second lower surface nozzle 13 is an example of a lower displacement liquid supply unit that supplies displacement liquid such as IPA to the lower surface of the substrate W.

[0121] Multiple second lower surface nozzles 13 are respectively connected to multiple lower displacement fluid pipes 45 that guide the displacement fluid to the second lower surface nozzles 13. If the lower displacement fluid valve 55 provided in the lower displacement fluid pipe 45 is opened, the displacement fluid is continuously ejected from the second lower surface nozzles 13 toward the outer peripheral region of the lower surface of the substrate W.

[0122] Examples of flushing fluids ejected from the second lower surface nozzle 13 include the same flushing fluids as those ejected from the third pipe 33. Specifically, examples of flushing fluids ejected from the third pipe 33 include liquids containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and trans-1,2-dichloroethylene.

[0123] The displacement fluid ejected from the nozzle 13 on the second lower surface does not need to consist of only monomeric components; it can also be a liquid mixed with other components. For example, it can be a mixture of IPA and DIW, or a mixture of IPA and HFE.

[0124] The processing unit 2 also includes a lifting unit 61 for driving the lifting and lowering of the opposing member 6, and a rotating unit 62 for rotating the opposing member 6 about the rotation axis A1. The lifting unit 61 can position the opposing member 6 at any position (height) from the lower position to the upper position.

[0125] The lower position refers to the position where the opposing surface 6a is closest to the substrate W within the movable range of the opposing member 6. The upper position refers to the position where the opposing surface 6a is furthest from the substrate W within the movable range of the opposing member 6.

[0126] In order for the handling robot CR to move near the rotating base 21 so that the handling robot CR can move the substrate W into or out of the chamber 4, the opposing member 6 needs to be in the upper position.

[0127] The opposing component lifting unit 61 includes, for example, a ball screw mechanism (not shown) coupled to a support member (not shown) that supports the hollow shaft 60, and an electric motor (not shown) that provides driving force to the ball screw mechanism. The opposing component lifting unit 61 is also referred to as an opposing component lifter (blocking plate lifter).

[0128] The opposing member rotation unit 62 includes, for example, an electric motor (not shown) that rotates the hollow shaft 60. The electric motor is, for example, built into a support member that supports the hollow shaft 60. The opposing member rotation unit 62 rotates the opposing member 6 by rotating the hollow shaft 60.

[0129] The annular member 8 surrounds the substrate W when viewed from above. The annular member 8 is positioned below the extension portion 66 of the opposing member 6. The annular member 8 is connected to the extension portion 66 via multiple connecting members 9. Since the annular member 8 is connected to the opposing member 6, it rises and falls along with the opposing member 6. That is, the opposing member lifting unit 61 also functions together with the opposing member 6 as an annular member lifting unit for raising and lowering the annular member 8.

[0130] The opposing member lifting unit 61 enables the opposing member 6 to be moved to the base plate W, and the opposing member 6 and the annular member 8 to form a shielding space SS that restricts the inflow of ambient gas from the outside (see below). Figure 3 The location for dividing the obstruction space can be either between the upper and lower positions, or it can be the lower position.

[0131] Figure 3 This is a sectional view of the periphery of the extension 66 of the opposing member 6. For example... Figure 3 As shown, a processing liquid discharge path 10 is defined by the extension portion 66 and the annular member 8, which discharges the processing liquid from the blocking space SS to the outer space OS. The outer space OS includes the space above the opposing member 6, the space below the lower surface of the substrate W, and the space radially outward of the opposing member 6 and the annular member 8.

[0132] The extension portion 66 includes a wide portion 80, which is wider in the vertical direction than the circular plate portion 65, and a connecting portion 81 that connects the circular plate portion 65 and the wide portion 80. The width of the connecting portion 81 in the vertical direction increases as it tends to move radially outward. The connecting portion 81 has an inclined lower surface 81a that is connected to the opposing surface 6a and is inclined downward as it tends to move radially outward. The wide portion 80 has a flat lower surface 80a that is connected to the inclined lower surface 81a and extends flatly in the horizontal direction below the opposing surface 6a.

[0133] The blocking space SS is the space between the opposing surface 6a of the circular plate portion 65 of the opposing member 6 and the inclined lower surface 81a of the extension portion 66 and the upper surface of the substrate W. The blocking space SS and the external space OS are connected by the processing liquid discharge path 10.

[0134] The annular member 8 has an upper surface, a lower surface, a radially inward end face (inner end face 84), and a radially outward end face. The upper and lower surfaces of the annular member 8 are both annular in shape when viewed from above. The upper surface of the annular member 8 has an annular guiding surface 85 that guides the processing liquid present at the periphery of the upper surface of the substrate W radially outward relative to the periphery of the upper surface of the substrate W, and an annular discharge path dividing surface 86 that, together with the extension portion 66, divides the processing liquid discharge path 10. The inner end face 84 is a cylindrical shape extending in the vertical direction.

[0135] The guide surface 85 connects to the upper end of the inner end face 84 and the radially inner end of the discharge path dividing surface 86. Both the guide surface 85 and the discharge path dividing surface 86 are flat in the horizontal direction. The guide surface 85 and the discharge path dividing surface 86 are the same surface. That is, the guide surface 85 and the discharge path dividing surface 86 constitute a single flat surface that is flat and annular in the horizontal direction.

[0136] In the first embodiment, when the opposing member 6 is in the space-blocking position, the annular member 8 is radially outward opposite to the substrate W. When the opposing member 6 is in the space-blocking position, the upper end of the inner end face 84 and the guide surface 85 are at the same height as the upper surface of the substrate W.

[0137] The lower surface of the annular member 8 has an annular lower inclined surface 87 and an annular lower flat surface 88. The lower inclined surface 87 is connected to the lower end of the inner end face 84 and is inclined downward as it tends to move radially outward. The lower flat surface 88 is connected to the radially outward end of the lower inclined surface 87 and is flat in the horizontal direction.

[0138] The treatment fluid discharge path 10 is divided by a horizontally flat discharge path dividing surface 86 and a flat lower surface 80a. Therefore, the treatment fluid discharge path 10 is annular in plan view and extends horizontally.

[0139] The treatment fluid discharge path 10 has an inlet 10a for the treatment fluid to flow into the guide surface 85 and an outlet 10b for the treatment fluid to discharge radially outward. The inlet 10a is located at the boundary between the guide surface 85 and the discharge path dividing surface 86. The inlet 10a is located at the radially inner end of the treatment fluid discharge path 10, and the outlet 10b is located at the radially outer end of the treatment fluid discharge path 10.

[0140] The width of the vertical blocking space SS (blocking space width D1) is greater than the width of the gap G (gap width D2) between the periphery of the substrate W and the inner end face 84 of the annular member 8 in the horizontal direction. The blocking space width D1 is greater than the width of the vertical processing liquid discharge path 10 (discharge path width D3).

[0141] Here, the blocking space width D1 includes the distance between the opposing surface 6a and the upper surface of the substrate W in the vertical direction, and the distance between the inclined lower surface 81a and the guide surface 85 in the vertical direction. Therefore, at the boundary between the guide surface 85 and the discharge path dividing surface 86, the blocking space width D1 is equal to the discharge path width D3. However, in most parts viewed from above, the blocking space width D1 is larger than the discharge path width D3, and the average value of the blocking space width D1 is larger than the discharge path width D3.

[0142] The distance between the opposing surface 6a in the vertical direction and the upper surface of the substrate W is, for example, 10 mm. The gap width D2 and the exhaust path width D3 are, for example, 1 mm. That is, the gap width D2 and the exhaust path width D3 are sufficiently small compared to the shielding space width D1, thus restricting the inflow of ambient gas from the external space OS.

[0143] The connecting structural member 9 is provided in the treatment liquid discharge path 10, and is connected to the flat lower surface 80a of the wide portion 80 of the extension portion 66 and the discharge path dividing surface 86 of the annular member 8. Figure 4 It is along Figure 2 A cross-sectional view of line IV-IV is shown. (See attached image.) Figure 4 As shown, multiple connecting members 9 are arranged at equal intervals in the rotation direction R of the substrate W. In this embodiment, there are 6 connecting members 9. Each connecting member 9 is cylindrical and extends in the vertical direction.

[0144] Refer again Figure 2 The processing cup 7 includes multiple shields 71 ​​for receiving liquid splashed outward from the substrate W held by the rotating chuck 5, and multiple cups 72 for receiving liquid guided downward using the multiple shields 71.

[0145] In this embodiment, an example is shown that has two shields 71 ​​(first shield 71A and second shield 71B) and two cups 72 (first cup 72A and second cup 72B).

[0146] Cup 1 (72A) and Cup 2 (72B) each have an upward-opening annular groove.

[0147] The first shield 71A is configured to surround the rotating base 21. The second shield 71B (inner shield) is configured to surround the rotating base 21 radially inward of the substrate W compared to the first shield 71A (outer shield).

[0148] The first shield 71A and the second shield 71B are generally cylindrical in shape, and the upper end of each shield 71 is inclined inward in a radially inward manner.

[0149] In detail, the first protective cover 71A has a first cylindrical portion 75A that surrounds the opposing member 6 and the annular member 8 when viewed from above, and a first annular portion 76A that extends radially inward from the upper end of the first cylindrical portion 75A. The first annular portion 76A is inclined relative to the horizontal direction in a manner that tends to rise as it tends to move radially inward.

[0150] The second protective cover 71B includes a second cylindrical portion 75B disposed inside the first cylindrical portion 75A and surrounding the opposing member 6 and the annular member 8 when viewed from above, and a second annular portion 76B extending radially inward from the upper end of the second cylindrical portion 75B. The second annular portion 76B is opposite to the first annular portion 76A from below. The second annular portion 76B is inclined relative to the horizontal direction in a manner that tends upward as it tends to be radially inward.

[0151] The first cup 72A receives the downward-directed processing liquid via the first shield 71A. The second cup 72B is integrally formed with the first shield 71A and receives the downward-directed processing liquid via the second shield 71B. The processing liquid received by the first cup 72A is recovered by a first processing liquid recovery path (not shown) connected to the lower end of the first cup 72A. The processing liquid received by the second cup 72B is recovered by a second processing liquid recovery path (not shown) connected to the lower end of the second cup 72B.

[0152] Processing unit 2 includes a shield lifting unit 74 that individually raises and lowers the first shield 71A and the second shield 71B. The shield lifting unit 74 raises and lowers the first shield 71A between a lower position and an upper position. The shield lifting unit 74 raises and lowers the second shield 71B between a lower position and an upper position.

[0153] When both the first shield 71A and the second shield 71B are in the upper position, the processing liquid splashed from the substrate W is received by the second shield 71B. When the second shield 71B is in the lower position and the first shield 71A is in the upper position, the processing liquid splashed from the substrate W is received by the first shield 71A.

[0154] When both the first protective cover 71A and the second protective cover 71B are in the lower position and the opposing member 6 is in the upper position, the handling robot CR can move the substrate W into the chamber 4 or move the substrate W out of the chamber 4.

[0155] The shield lifting unit 74 includes, for example, a first ball screw mechanism (not shown) coupled to the first shield 71A, a first motor (not shown) that provides driving force to the first ball screw mechanism, a second ball screw mechanism (not shown) coupled to the second shield 71B, and a second motor (not shown) that provides driving force to the second ball screw mechanism. The shield lifting unit 74 is also referred to as a shield lifter.

[0156] Figure 5This is a block diagram showing the electrical structure of the main parts of the substrate processing apparatus 1. The controller 3 is equipped with a microcomputer and controls the controlled objects of the substrate processing apparatus 1 according to a prescribed control program.

[0157] Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B storing a control program. The controller 3 is configured to perform various controls for substrate processing by causing the processor 3A to execute the control program.

[0158] In particular, the controller 3 is programmed to control the handling robot IR, CR, suction unit 27, rotary motor 23, protective cover lifting unit 74, opposing component rotation unit 62, opposing component lifting unit 61, suction valve 28, medicine valve 50, upper flushing liquid valve 51, upper displacement liquid valve 52, inactive gas valve 53, lower flushing liquid valve 54, and lower displacement liquid valve 55.

[0159] The controller 3 controls the valve to control whether the treatment liquid or inactive gas is ejected from the corresponding nozzle, and the ejection flow rate of the treatment liquid or inactive gas from the corresponding nozzle.

[0160] Figure 6 This is a flowchart illustrating an example of substrate processing based on substrate processing apparatus 1. Figure 6 This mainly illustrates the processing implemented by executing the program through controller 3. Figures 7A to 7F This is a schematic diagram illustrating the various steps in the substrate processing. The following mainly refers to... Figure 2 as well as Figure 6 Appropriate reference Figures 7A to 7F .

[0161] In substrate processing based on substrate processing apparatus 1, for example, such as Figure 6 As shown, the process includes substrate loading (step S1), shielding space division (step S2), ambient gas replacement (step S3), pre-rinsing (step S4), chemical supply (step S5), rinsing (step S6), replacement liquid supply (step S7), rotary drying (step S8), and substrate unloading (step S9).

[0162] First, such as Figure 7A As shown, the unprocessed substrate W is moved from the rack C to the processing unit 2 by the handling robot CR and delivered to the rotary chuck 5 (step S1). Thus, the substrate W is held horizontally by the rotary chuck 5 (substrate holding process). When the substrate W is moved in, the opposing member 6 retracts to the upper position and the multiple protective covers 71 retract to the lower position.

[0163] The substrate W is held by the rotary chuck 5 until the rotary drying process (step S8) ends. During the period from the start of the substrate holding process to the end of the rotary drying process (step S8), the shield lifting unit 74 adjusts the height position of the first shield 71A and the second shield 71B in such a way that at least one shield 71 is in the upper position.

[0164] Next, after the handling robot CR retracts outward from the processing unit 2, the blocking space division process (step S2) is performed to divide the blocking space SS. Specifically, as follows... Figure 7B As shown, the opposing member lifting unit 61 moves the opposing member 6 to the blocking space division position. Thus, the blocking space SS is divided using the base plate W, the opposing member 6, and the annular member 8.

[0165] Next, the following steps are performed in parallel: an environmental gas replacement process (step S3) to replace the ambient gas in the shielding space SS with an inactive gas, and a pre-rinsing process (step S4) to clean the upper surface of the substrate W with a rinsing solution.

[0166] Specifically, the rotary motor 23 starts the rotation of the substrate W. Then, the opposing member rotation unit 62 starts the rotation of the opposing member 6 and the annular member 8. The opposing member rotation unit 62 makes the opposing member 6 and the annular member 8 rotate synchronously with the substrate W (synchronous rotation process). The synchronous rotation of the substrate W, the opposing member 6, and the annular member 8 continues until the rotary drying process (step S8) ends.

[0167] Then, with the opposing member 6 in the blocked space division position, open the inactive gas valve 53 and the upper flushing fluid valve 51. By opening the inactive gas valve 53, as... Figure 7C As shown, inactive gas is ejected from the central nozzle 11, supplying inactive gas to the shielded space SS. By opening the upper flushing fluid valve 51, on the upper surface of the substrate W, as shown... Figure 7C As shown, a rinsing liquid such as DIW is sprayed from the central nozzle 11 toward the upper surface of the substrate W. The sprayed rinsing liquid reaches the central region of the upper surface of the substrate W.

[0168] The centrifugal force generated by the rotation of substrate W acts on the rinsing fluid adhering to the upper surface of substrate W. Therefore, the rinsing fluid is supplied to the entire upper surface of substrate W by centrifugal force. The rinsing fluid reaching the periphery of the upper surface of substrate W flows into the processing fluid discharge path 10 via guide surface 85. Then, the rinsing fluid flowing into the processing fluid discharge path 10 is discharged outside the shielding space SS. The gap G is blocked by the rinsing fluid moving from the periphery of the upper surface of substrate W towards guide surface 85.

[0169] If inactive gas is supplied to the shielded space SS, the air in the shielded space SS begins to be forced out from the gap G and the processing liquid discharge path 10 by the inactive gas. By continuously supplying inactive gas to the shielded space SS, all the air in the shielded space SS is discharged, and the shielded space SS is filled with inactive gas. That is, the ambient gas in the shielded space SS is replaced by inactive gas. The inactive gas valve 53 is kept open until the rotary drying process (step S8) ends.

[0170] During the pre-rinsing process, the gap G between the annular member 8 and the substrate W is blocked by the rinsing liquid. Therefore, the movement of inactive gas through the gap G is suppressed. Furthermore, the rinsing liquid is discharged from the shielded space SS to the external space OS via the processing liquid discharge path 10. Therefore, unless a force is applied that causes a significant pressure drop in the processing liquid discharge path 10, ambient gas will not flow into the shielded space SS via the processing liquid discharge path 10. On the other hand, inactive gas is supplied to the shielded space SS, thus discharging air from the shielded space SS to the external space OS via the processing liquid discharge path 10 in a manner that prevents an excessive pressure rise within the shielded space SS.

[0171] Therefore, it is possible to suppress the inflow of ambient gas from the external space OS into the shielded space SS while replacing the ambient gas in the shielded space SS with inactive gas.

[0172] In addition, Figure 7C The diagram illustrates a state where the treatment fluid discharge path 10 is filled with flushing fluid. However, as inactive gas passes through the treatment fluid discharge path 10 and moves into the external space OS, a portion of the flushing fluid (treatment fluid) is pushed back, causing it to move within the treatment fluid discharge path 10 (in...). Figure 7D (The same applies to the accompanying diagrams).

[0173] Next, a solution supply process (step S5) is performed to supply solution to the upper surface of substrate W in order to treat the upper surface of substrate W with solution.

[0174] Specifically, with the inactive gas filling the shielded space SS, the upper flushing fluid valve 51 is closed and the drug valve 50 is opened. This stops the flushing fluid from the central nozzle 11 and sprays DHF and other drugs from the central nozzle 11 toward the upper surface of the substrate W.

[0175] like Figure 7D As shown, the sprayed solution adheres to the central region of the upper surface of the substrate W. The solution supply process is an example of a process in which the solution is supplied to the upper surface of the substrate W while the ambient gas within the shielded space SS is replaced by an inactive gas. A pre-rinsing process is performed before the solution supply process.

[0176] The centrifugal force generated by the rotation of substrate W acts on the liquid medicine adhering to the upper surface of substrate W. Therefore, the liquid medicine is supplied to the entire upper surface of substrate W by centrifugal force, replacing the rinsing liquid present on the upper surface of substrate W. The liquid medicine reaching the periphery of the upper surface of substrate W flows into the processing liquid discharge path 10 via the guide surface 85. Then, the liquid medicine is discharged outside the shielding space SS via the processing liquid discharge path 10 (liquid medicine discharge process, processing liquid discharge process).

[0177] Additionally, during the liquid supply process, multiple lower flushing fluid valves 54 are opened. This initiates the ejection of flushing fluid from multiple first lower surface nozzles 12. The flushing fluid ejected from the multiple first lower surface nozzles 12 adheres to the lower surface of the substrate W.

[0178] The centrifugal force generated by the rotation of the substrate W acts on the rinsing liquid adhering to the lower surface of the substrate W. As a result, the rinsing liquid diffuses to the periphery of the lower surface of the substrate W. By spreading the rinsing liquid to the periphery of the lower surface of the substrate W, the lower surface of the substrate W is protected (lower surface protection process, protective liquid supply process). The rinsing liquid functions as a protective liquid for the lower surface of the substrate W. Therefore, the first lower surface nozzle 12 functions as a protective liquid supply unit.

[0179] The rinsing fluid that reaches the periphery of the lower surface of the substrate W is guided to the lower surface of the annular member 8, and then splashes radially outward from the annular member 8.

[0180] Next, a rinsing process (step S6) is performed to supply rinsing fluid to the upper surface of the substrate W to rinse away the chemical solution present on the upper surface of the substrate W. Specifically, with the inactive gas filling the shielding space SS, the chemical solution valve 50 is closed and the upper rinsing fluid valve 51 is opened. This stops the ejection of chemical solution from the central nozzle 11, and rinsing fluid such as DIW is ejected from the central nozzle 11 toward the upper surface of the substrate W. Figure 7E As shown, the sprayed rinsing fluid adheres to the central region of the upper surface of the substrate W. The rinsing fluid supply process is an example of a process in which the processing fluid is supplied to the upper surface of the substrate W while the ambient gas in the shielded space SS is replaced by an inactive gas.

[0181] The centrifugal force generated by the rotation of substrate W acts on the rinsing fluid adhering to the upper surface of substrate W. Therefore, the rinsing fluid is supplied to the entire upper surface of substrate W by centrifugal force, displacing the chemical solution present on the upper surface of substrate W. The rinsing fluid reaching the periphery of the upper surface of substrate W flows into the processing fluid discharge path 10 via the guide surface 85. Then, the rinsing fluid is discharged outside the shielding space SS via the processing fluid discharge path 10 (rinsing fluid discharge process, processing fluid discharge process). During the rinsing process, multiple lower rinsing fluid valves 54 are kept open.

[0182] Next, a displacement fluid supply process (step S7) is performed, in which displacement fluid is supplied to the upper surface of the substrate W to replace the rinsing fluid present on the upper surface of the substrate W. Specifically, with the inactive gas filling the shielding space SS, the upper rinsing fluid valve 51 is closed and the upper displacement fluid valve 52 is opened. This stops the ejection of rinsing fluid from the central nozzle 11, and a displacement fluid such as IPA is ejected from the central nozzle 11 toward the upper surface of the substrate W. Figure 7F As shown, the ejected replacement fluid adheres to the central region of the upper surface of the substrate W. The replacement fluid supply process is an example of a process in which the processing fluid is supplied to the upper surface of the substrate W while the ambient gas in the shielded space SS is replaced by an inactive gas.

[0183] The centrifugal force generated by the rotation of substrate W acts on the displacement fluid adhering to the upper surface of substrate W. Therefore, the displacement fluid is supplied to the entire upper surface of substrate W by centrifugal force, displacing the rinsing fluid present on the upper surface of substrate W. The displacement fluid reaching the periphery of the upper surface of substrate W flows into the processing fluid discharge path 10 via the guide surface 85. Then, the displacement fluid is discharged outside the shielding space SS via the processing fluid discharge path 10 (displacement fluid discharge process, processing fluid discharge process).

[0184] During the replacement fluid supply process, multiple lower flushing fluid valves 54 are closed, and multiple lower replacement fluid valves 55 are opened. This stops the ejection of flushing fluid from multiple first lower surface nozzles 12 and begins ejecting replacement fluid such as IPA from multiple second lower surface nozzles 13. The replacement fluid ejected from the multiple second lower surface nozzles 13 adheres to the lower surface of the substrate W.

[0185] The centrifugal force generated by the rotation of the substrate W acts on the displacement liquid adhering to the lower surface of the substrate W. As a result, the displacement liquid diffuses to the periphery of the lower surface of the substrate W (lower surface protection process, protective liquid supply process). The displacement liquid functions as a protective liquid for the lower surface of the substrate W. Therefore, the second lower surface nozzle 13 functions as a protective liquid supply unit.

[0186] The replacement fluid displaces the rinsing fluid present on the lower surface of the substrate W by diffusing to the periphery of the lower surface of the substrate W. The replacement fluid that reaches the periphery of the lower surface of the substrate W is guided to the lower surface of the annular member 8, and then splashes radially outward from the annular member 8.

[0187] Next, a rotary drying process (step S8) is performed. Specifically, the upper displacement fluid valve 52 and multiple lower displacement fluid valves 55 are closed. This stops the supply of displacement fluid to the upper and lower surfaces of the substrate W.

[0188] Then, the rotary motor 23 accelerates the rotation of the substrate W, causing it to rotate at high speed. This generates a large centrifugal force that acts on the displacement liquid remaining on the substrate W, causing it to be thrown outwards. During the rotary drying process, inactive gas is continuously supplied to the shielded space SS to promote the evaporation of the displacement liquid.

[0189] Then, the rotary motor 23 stops the rotation of the substrate W, and the opposing member rotation unit 62 stops the rotation of the opposing member 6 and the annular member 8. The shield lifting unit 74 moves the first shield 71A and the second shield 71B to the lower position. The inactive gas valve 53 is closed. Then, the opposing member lifting unit 61 moves the opposing member 6 to the upper position.

[0190] The transport robot CR enters the processing unit 2, removes the processed substrate W from the chuck pin 20 of the rotary chuck 5, and moves it out of the processing unit 2 (step S9). The transport robot CR delivers the substrate W to the transport robot IR, and the transport robot IR stores the substrate W in the shelf C.

[0191] Next, the condition of the processing liquid near the annular member 8 in the substrate processing will be described. The condition of the processing liquid near the annular member 8 is the same regardless of the type of processing liquid. That is, the same description can be used in any of the pre-rinsing process, the chemical supply process, the rinsing process, and the replacement liquid supply process.

[0192] Figure 8 This is a schematic diagram illustrating the situation of the processing liquid near the annular member 8 when the processing liquid is discharged from the shielded space SS. Centrifugal force acts on the processing liquid present on the upper surface of the substrate W, and the annular member 8 is positioned close to the periphery of the upper surface of the substrate W. Therefore, the processing liquid that reaches the periphery of the upper surface of the substrate W does not fall downward from the gap G between the periphery of the substrate W and the annular member 8, but moves radially outward from the periphery of the upper surface of the substrate W to the guide surface 85. That is, the guide surface 85, through the centrifugal force generated by the rotation of the substrate W, causes the processing liquid present on the upper surface of the substrate W to move radially outward from the periphery of the upper surface of the substrate W.

[0193] The treatment fluid moving toward the guide surface 85 tends to move radially outward on the guide surface 85 and flows into the inlet 10a of the treatment fluid discharge path 10. The treatment fluid flowing into the inlet 10a of the treatment fluid discharge path 10 moves the treatment fluid discharge path 10 radially outward and horizontally, and is discharged from the outlet 10b.

[0194] Sometimes, before the treatment fluid flows into the treatment fluid discharge path 10, the treatment fluid on the guide surface 85 collides with the inclined lower surface 81a of the extension portion 66 of the opposing member 6. In this case, a backflow (flow toward the radial inward) is generated in the treatment fluid on the guide surface 85, and the filling portion 100 is formed by the generation of this backflow.

[0195] If backflow occurs, there is a risk that the processing liquid trending radially inward and radially outward will collide, causing processing liquid to splash within the shielding space SS. If the processing liquid splashed into the shielding space SS then adheres to the upper surface of the substrate W, particles will be generated on the substrate W.

[0196] Unlike this embodiment, if the configuration does not include the guide surface 85, there is a concern that the inlet 10a of the processing liquid discharge path 10 is located near the periphery of the substrate W, and therefore, backflow of the processing liquid occurs on the upper surface of the substrate W.

[0197] In this embodiment, the inlet 10a of the processing liquid discharge path 10 is located at the boundary between the discharge path dividing surface 86 and the guide surface 85, which are connected to the outer end of the radially directed guide surface 85. Therefore, even if backflow occurs in the processing liquid, the occurrence point is not on the substrate W, but on the guide surface 85. Therefore, backflow in the processing liquid on the substrate W can be suppressed. Therefore, particles can be generated on the upper surface of the substrate W.

[0198] In the above-described substrate processing, during the period from the start of the substrate holding process to the end of the rotary drying process (step S8), the height positions of the first shield 71A and the second shield 71B are adjusted so that at least one shield 71 is in the upper position. However, particularly in the liquid supply process (step S4), the shield 71 is preferably configured as described below. Figure 9 This is a schematic diagram illustrating the situation where the shield 71 receives the processing liquid during substrate processing.

[0199] Specifically, during the discharge of treatment fluid (DHF) from the outlet 10b, the treatment fluid discharge path 10 is positioned between the radially inner end 76a of the first annular portion 76A of the first shield 71A and the radially inner end 76b of the second annular portion 76B of the second shield 71B in the vertical direction. Specifically, the shield lifting unit 74 moves the first shield 71A and the second shield 71B in such a way that the treatment fluid discharge path 10 is positioned between the radially inner end 76a of the first annular portion 76A and the radially inner end 76b of the second annular portion 76B in the vertical direction (shield moving process).

[0200] More specifically, the first shield 71A is moved to or maintained in the upper position. This causes it to move in and out such that, in the vertical direction, the radially inner end 76a of the first annular portion 76A is positioned above the outlet 10b and below the upper end of the extension portion 66. The second shield 71B is moved such that, in the vertical direction, the radially inner end 76b of the second annular portion 76B is positioned below the outlet 10b and above the lower end of the annular member 8.

[0201] When the treatment liquid is discharged from the outlet 10b of the treatment liquid discharge path 10, the first annular portion 76A of the first protective cover 71A is positioned above the outlet 10b in the vertical direction. Therefore, the treatment liquid discharged from the outlet 10b passes between the first annular portion 76A and the second annular portion 76B and is received by the first cylindrical portion 75A. Sometimes, the treatment liquid received by the first cylindrical portion 75A may rebound from the first cylindrical portion 75A.

[0202] The radially inward end 76b of the second annular portion 76B is located below the vertical outlet 10b. Therefore, the processing liquid rebounding from the first shield 71A does not move radially inward compared to the second shield 71B, but instead adheres to the second annular portion 76B from above or to the second cylindrical portion 75B from the radially outward. Thus, it is possible to suppress the processing liquid rebounding from the first shield 71A from adhering to the lower surface of the substrate W.

[0203] The radially inner end 76b of the second annular portion 76B is located above the lower end of the annular member 8 in the vertical direction. Therefore, it is possible to suppress the processing liquid rebounding from the first shield 71A from moving radially inward from the gap between the second annular portion 76B and the annular member 8.

[0204] Furthermore, the lower surface of the substrate W is protected by a protective liquid (DIW). Therefore, the lower surface of the substrate W can be protected from the effects of mist or other contaminants of the processing liquid floating near the lower surface of the substrate W. Moreover, during the period when the processing liquid is ejected from the outlet 10b, the radially inward end 76b of the second annular portion 76B is located below the outlet 10b and above the lower end of the annular member 8. Therefore, the second shield 71B can receive the protective liquid discharged outward from the lower surface of the substrate W. That is, the first shield 71A can receive the processing liquid discharged from the upper surface of the substrate W, and the second shield 71B can receive the protective liquid discharged outward from the lower surface of the substrate W. Therefore, mixing of the processing liquid and the protective liquid can be avoided, and the processing liquid and the protective liquid can be recovered separately.

[0205] The protective liquid moves radially outward by centrifugal force, from the lower surface of the substrate W to the lower inclined surface 87 of the annular member 8. The lower inclined surface 87 is inclined downward as it moves radially outward.

[0206] Therefore, the protective liquid splashes from the annular member 8 along the direction of the lower inclined surface 87, that is, diagonally downwards, and is received by the second cylindrical portion 75B of the second shield 71B. Thus, it is possible to suppress the protective liquid from splashing diagonally upwards. As a result, it is possible to prevent the processing liquid splashing diagonally upwards from entering between the first annular portion 76A of the first shield 71A and the second annular portion 76B of the second shield 71B.

[0207] According to the first embodiment, the opposing member 6 is moved to the blocking space division position along with the annular member 8, thereby dividing the blocking space SS using the substrate W, the opposing member 6, and the annular member 8. With the blocking space SS formed, an inert gas is supplied toward the upper surface of the substrate W, thereby replacing the ambient gas within the blocking space SS with an inert gas. This reduces the oxygen concentration within the blocking space SS, i.e., the oxygen concentration of the ambient gas near the upper surface of the substrate W.

[0208] The shielded space SS restricts the inflow of ambient gas from the external space OS. Therefore, once the ambient gas in the shielded space SS is replaced with an inactive gas, it is easy to maintain a state where the oxygen concentration in the ambient gas in the shielded space SS is reduced.

[0209] With the ambient gas in the shielded space SS replaced by an inactive gas, a processing liquid is supplied to the upper surface of the substrate W. This suppresses the rise in oxygen concentration in the processing liquid and treats the upper surface of the substrate W with the processing liquid.

[0210] The processing liquid supplied to the upper surface of the substrate W moves towards the periphery of the upper surface of the substrate W using centrifugal force. The processing liquid reaching the periphery of the upper surface of the substrate W does not splash off the substrate W, but moves onto the guide surface 85 of the annular member 8. The processing liquid present on the guide surface 85 is discharged outside the shielding space SS via the processing liquid discharge path 10. Because the guide surface 85 exists between the periphery of the substrate W and the processing liquid discharge path 10, the periphery of the substrate W is sufficiently separated from the extension portion 66 of the opposing member 6. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate W from rebounding from the opposing member 6 and re-adhering to the upper surface of the substrate W. Even if the processing liquid discharged from the upper surface of the substrate W rebounds from the opposing member 6, most of it adheres to the guide surface 85, which is radially outward compared to the upper surface of the substrate W. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W.

[0211] The results show that the oxygen concentration in the ambient gas near the upper surface of substrate W can be reduced, and the generation of particles on the upper surface of substrate W can be suppressed.

[0212] Furthermore, unlike the first embodiment, when the peripheral portion of the upper surface of the substrate W is not sufficiently close to the annular member 8, the processing liquid is discharged not only from the guide surface 85 and the processing liquid discharge path 10 but also from the gap G. Therefore, there is a concern that the processing liquid on the guide surface 85 may disperse into droplets and bounce off the guide surface 85 and re-adhere to the substrate W. In the first embodiment, the gap width D2 is sufficiently small, and the peripheral portion of the upper surface of the substrate W is sufficiently close to the annular member 8; therefore, the processing liquid does not become droplets, and the movement of the processing liquid from the upper surface of the substrate W to the guide surface 85 can be suppressed. Therefore, the generation of particles can be suppressed.

[0213] According to the first embodiment, the width D3 of the discharge path is smaller than the width D1 of the shielding space. Therefore, the flow rate of the fluid that can pass through the processing liquid discharge path 10 is relatively small. Therefore, it is possible to suppress the inflow of ambient gas outside the shielding space SS through the processing liquid discharge path 10 during the period when the processing liquid is discharged out of the shielding space SS via the processing liquid discharge path 10. Therefore, when the ambient gas in the shielding space SS is replaced with an inactive gas, the processing liquid is supplied to the upper surface of the substrate W, thereby suppressing the increase of oxygen concentration in the processing liquid and treating the upper surface of the substrate W with the processing liquid.

[0214] In the first embodiment, the inlet 10a of the processing liquid discharge path 10 is located at the boundary between the discharge path dividing surface 86 and the guide surface 85, which are connected to the outer end of the radially directed guide surface 85. Therefore, even if backflow occurs in the processing liquid, the occurrence site is not on the substrate W, but on the guide surface 85. Therefore, backflow in the processing liquid on the substrate W can be suppressed. Therefore, the generation of particles on the upper surface of the substrate W can be suppressed.

[0215] Unlike this embodiment, a layer difference can also be provided between the guide surface 85 and the discharge path dividing surface 86. In this case, the re-adhesion of the processing liquid can be suppressed compared to the configuration without the guide surface 85. However, there is concern about the processing liquid adhering to the substrate due to the layer difference and then re-adhering to the upper surface of the substrate. As a result, there is concern about the generation of particles on the upper surface of the substrate W.

[0216] Therefore, according to the first embodiment, the annular member 8 has a discharge path dividing surface 86 that divides the processing liquid discharge path 10 together with the extension portion 66. The discharge path dividing surface 86 and the guide surface 85 constitute a single flat surface that is flat in the horizontal direction. Therefore, the processing liquid flowing over the guide surface 85 can smoothly flow into the processing liquid discharge path 10. Therefore, it is possible to suppress the splashing of processing liquid in the blocking space SS and to suppress the generation of particles caused by the splashing of processing liquid.

[0217] There is concern that if the rotational speed of the substrate W differs significantly from the rotational speeds of the opposing member 6 and the annular member 8, airflow turbulence may occur within the shielding space SS. When airflow turbulence occurs, the airflow may force the processing liquid on the upper surface of the substrate W, causing partial exposure of the upper surface of the substrate W or splashing of the processing liquid within the shielding space SS. According to the first embodiment, the substrate W, the annular member 8, and the opposing member 6 that divide the shielding space SS rotate synchronously. Therefore, airflow turbulence within the shielding space SS can be suppressed.

[0218] In the first embodiment, a pre-rinsing process is performed to block the gap G with rinsing fluid. Therefore, from the start of the drug supply process after the pre-rinsing process until the drug reaches the vicinity of the gap G, the gap G remains blocked by rinsing fluid. This suppresses the inflow of air into the gap G from the start of drug supply. Consequently, the oxygen concentration in the shielded space SS is reduced during drug supply.

[0219] Furthermore, during the subsequent rinsing and replacement fluid supply processes, gap G is also blocked by the rinsing and replacement fluids, respectively. Therefore, during the period when the processing fluid is supplied to the upper surface of the substrate W, air inflow from gap G is suppressed.

[0220] Unlike the first embodiment, in the configuration without the opposing member 6, the annular member 8 does not rotate. Therefore, there is concern that processing liquid moving radially outward from the periphery of the substrate W may remain on the guide surface 85. The processing liquid remaining on the guide surface 85 may splash in the ambient gas, thereby raising concerns about the generation of particles on the substrate W.

[0221] Therefore, in the first embodiment, an annular member 8 is connected to the opposing member 6, so that the annular member 8 can rotate together with the opposing member 6 when the processing liquid on the substrate W is discharged. Therefore, since the processing liquid is less likely to remain on the guide surface 85, particles are less likely to be generated on the substrate W. Furthermore, a plurality of connecting members that connect the opposing member 6 and the annular member 8 are provided within the processing liquid discharge path 10. Therefore, compared to a configuration where the connecting members 9 are located radially inward of the processing liquid discharge path 10, in the event of processing liquid rebounding after colliding with the connecting members 9, the rebounded processing liquid is less likely to adhere to the upper surface of the substrate W.

[0222] Figure 10A as well as Figure 10B This is a schematic diagram illustrating yet another example of substrate processing. Figure 10A as well as Figure 10B For ease of explanation, the diagram of connecting member 9 has been omitted. In this other example of substrate processing, as... Figure 10B As shown, the position of the opposing member 6 when the upper end of the inner square end face 84 of the annular member 8 is at the same height as the upper surface of the substrate W is called the first blocking space division position. The first blocking space division position is... Figure 3 The locations shown are the same as the locations where the obstruction space is divided.

[0223] In this other example of substrate processing, such as Figure 10A As shown, in the process of supplying the treatment fluid, the opposing component lifting unit 61 (refer to...) Figure 2 The opposing component 6 is positioned at the second blocking space division position.

[0224] The second blocking space division position is the position of the opposing member 6 when the upper end of the inner square end face 84 of the annular member 8 is above the upper surface of the substrate W, and the blocking space SS is divided using the substrate W, the opposing member 6, and the annular member 8.

[0225] With the opposing member 6 in the second blocking space division position, a treatment liquid such as a medicine is supplied from the central nozzle 11 toward the upper surface of the substrate W. As a result, a liquid accumulation 101 with the treatment liquid is formed by the inner end face 84 of the annular member 8 and the upper surface of the substrate W (liquid accumulation process).

[0226] Therefore, the upper surface of the substrate W is treated with the processing liquid in the liquid accumulation 101. Thus, if the amount of processing liquid required to form the liquid accumulation 101 is supplied to the upper surface of the substrate W, the upper surface of the substrate W can be treated. Therefore, compared to a configuration where the processing liquid supplied to the upper surface of the substrate W is discharged outwards from the substrate W without being received by the inner end face 84, the consumption of processing liquid can be reduced. The second blocking space division position is also called the liquid accumulation formation position.

[0227] Then, after the prescribed time had elapsed following the formation of 101 fluid accumulations, as... Figure 10B As shown, the opposing component lifting unit 61 (refer to) Figure 2 The opposing member 6 is moved to the first blocking space division position. That is, the upper end of the inner square end face 84 of the annular member 8 is moved to the same height position as the upper surface of the substrate W. Figure 10B The opposing member 6 and the annular member 8 are shown with double-dotted lines when the opposing member 6 is located at the second blocking space division position.

[0228] By moving the opposing member 6 to the first blocking space division position, the processing liquid present on the upper surface of the substrate W is released from the state of being received by the inner end face 84. Therefore, the processing liquid moves radially outward by centrifugal force, and the accumulated liquid 101 is discharged from the upper surface of the substrate W (liquid discharge process).

[0229] The processing liquid, moving outwards towards the periphery of the substrate W by centrifugal force, flows smoothly into the processing liquid discharge path 10 via the guide surface 85 (see reference). Figure 8 Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate W.

[0230] Next, a variation of the substrate processing apparatus 1 of the first embodiment will be described. Figure 11A as well as Figure 11B This is a schematic diagram illustrating a modified example of the substrate processing apparatus 1 according to the first embodiment. Figure 11A as well as Figure 11B For ease of explanation, the diagram of connecting component 9 has been omitted.

[0231] In the annular member 8 of the modified example of the first embodiment, such as Figure 11A As shown, the guide surface 85 is an inclined surface. In the modified example, the guide surface 85 is inclined upwards as it tends to move radially outwards. In addition, in the annular member 8 of the modified example of the first embodiment, the lower inclined surface 87 is not provided, and the lower flat surface 88 is connected to the lower end of the inner end face 84.

[0232] Furthermore, in this modified example, the boundary 6c of the flat lower surface 80a of the wide portion 80 of the opposing member 6 and the inclined lower surface 81a of the connecting portion 81 of the opposing member 6 is located radially inward compared to the boundary 8c of the guide surface 85 of the annular member 8 and the discharge path dividing surface 86 of the annular member 8.

[0233] When the opposing member 6 is located at the position of the blocking space division, the upper end of the inner square end face 84 is at the same height as the upper surface of the substrate W.

[0234] Furthermore, in this modified example, it is also clearly configured such that, in most parts viewed from above, the width of the blocking space D1 is larger than the width of the discharge road D3, and the average value of the width of the blocking space D1 is larger than the width of the discharge road D3.

[0235] In the substrate processing based on the substrate processing apparatus 1 according to the first embodiment, with the opposing member 6 in the position of blocking the space division, a processing liquid such as a chemical solution is supplied from the central nozzle 11 toward the upper surface of the substrate. Thus, as... Figure 11A As shown, a liquid accumulation 101 (liquid accumulation formation process) of the processing liquid is formed by receiving the processing liquid on the guide surface 85 of the annular member 8 and the upper surface of the substrate W. Therefore, the upper surface of the substrate W is treated with the processing liquid in the liquid accumulation 101. Therefore, if the amount of processing liquid required to form the liquid accumulation 101 is supplied to the upper surface of the substrate W, the upper surface of the substrate W can be treated. Therefore, compared to a configuration where the processing liquid supplied to the upper surface of the substrate W is not received by the inclined guide surface 85 and is discharged out of the substrate W, the consumption of processing liquid can be reduced.

[0236] Then, after the prescribed time had elapsed following the formation of 101 fluid accumulations, as... Figure 11BAs shown, the rotary motor 23 accelerates the rotation of the substrate W (substrate acceleration process). Specifically, the rotation speed of the substrate W is changed from a predetermined liquid accumulation rate (e.g., 10 rpm) to a liquid discharge rate (e.g., 1000 rpm). In this modified example, the guide surface 85 is inclined upwards as it tends to move radially outwards. Therefore, by accelerating the rotation of the substrate W, centrifugal force is applied to the liquid accumulation 101, allowing the processing liquid to rise smoothly along the guide surface 85. Consequently, the processing liquid moves radially outwards, and the liquid accumulation 101 is discharged from the upper surface of the substrate W (liquid discharge process). The processing liquid rising on the guide surface 85 flows smoothly into the processing liquid discharge path 10. Therefore, particles can be generated on the upper surface of the substrate W.

[0237] Here, when the boundary 6c between the flat lower surface 80a and the inclined lower surface 81a, and the boundary 8c between the guide surface 85 and the discharge path dividing surface 86, are located in a position where they overlap when viewed from above, or when boundary 6c is located radially inward compared to boundary 8c, there is a possibility that the processing fluid rising on the guide surface 85 may collide with the inclined lower surface 81a. Therefore, there is a concern that backflow may occur in the processing fluid on the guide surface 85, potentially causing the processing fluid to become clogged and generate particles.

[0238] like Figure 11A as well as Figure 11B As shown, if the boundary 6c between the flat lower surface 80a and the inclined lower surface 81a is located radially inward compared to the boundary 8c between the guide surface 85 and the discharge path dividing surface 86, then the treatment fluid rising on the guide surface 85 will collide with the flat lower surface 80a instead of the inclined lower surface 81a. Therefore, the treatment fluid will flow smoothly into the treatment fluid discharge path 10 without being blocked.

[0239] <Second Implementation>

[0240] Figure 12 This is a schematic partial cross-sectional view illustrating the general configuration of the processing unit 2P included in the substrate processing apparatus 1 according to the second embodiment of the present invention. Figure 12 And the following Figure 13 In the middle, regarding the above Figures 1 to 11B The shown components are equivalent to the component designations. Figure 1 The same reference numerals are used in the accompanying drawings, and their descriptions are omitted.

[0241] In the processing unit 2P of the second embodiment, the substrate is held in the same form as in the processing unit 2 of the first embodiment (see reference 2P). Figure 2 )different.

[0242] Specifically, the rotary chuck 5P of the processing unit 2P does not include the suction unit 27, but includes a plurality of chuck pins 20 that hold the periphery of the substrate W. The plurality of chuck pins 20 are arranged circumferentially (rotation direction R) on the upper surface of the rotating base 21. The plurality of chuck pins 20 can be opened and closed between a closed state in contact with the periphery of the substrate W and holding the substrate W, and an open state in which they retract from the periphery of the substrate W.

[0243] Furthermore, the processing unit 2P of the second embodiment does not include a plurality of first lower surface nozzles 12 and a plurality of second lower surface nozzles 13, but includes a lower surface nozzle 14.

[0244] The lower surface nozzle 14 is inserted into a through hole 21a that opens in the center of the upper surface of the rotating base 21 and into a hollow rotating shaft 22. The nozzle outlet 14a of the lower surface nozzle 14 protrudes from the upper surface of the rotating base 21. The nozzle outlet 14a of the lower surface nozzle 14 is positioned opposite to the lower surface (lower side surface) of the substrate W from below in the central region.

[0245] One end of a common pipe 46 is connected to the lower surface nozzle 14, which guides both the flushing fluid and the displacement fluid to the lower surface nozzle 14. The other end of the common pipe 46 is connected to a lower flushing fluid pipe 47 that guides the flushing fluid to the common pipe 46, and a lower displacement fluid pipe 48 that guides the displacement fluid to the common pipe 46.

[0246] If the lower flushing fluid valve 57, which is located in the lower flushing fluid pipe 47, is opened, flushing fluid is continuously sprayed from the lower surface nozzle 14 toward the central region of the lower surface of the substrate W. If the lower displacement fluid valve 58, which is located in the lower displacement fluid pipe 48, is opened, displacement fluid is continuously sprayed from the lower surface nozzle 14 toward the central region of the lower surface of the substrate W.

[0247] A lower gas flow path 90 is formed through the space between the lower surface nozzle 14 and the through hole 21a of the rotating base 21. The lower gas flow path 90 is connected to an inactive gas pipe 49 that passes through the space between the inner circumferential surface of the rotating shaft 22 and the lower surface nozzle 14. If the inactive gas valve 59 disposed in the inactive gas pipe 49 is opened, inactive gas is ejected from the lower gas flow path 90 toward the portion around the center of the lower surface of the substrate W.

[0248] The lower surface nozzle 14 is an example of a lower rinsing fluid supply unit that supplies rinsing fluid to the lower surface of the substrate W. Additionally, the lower surface nozzle 14 is an example of a lower displacement fluid supply unit that supplies displacement fluid to the lower surface of the substrate W. Furthermore, the lower surface nozzle 14 is an example of a lower inactive gas supply unit that supplies inactive gas toward the lower surface of the substrate W.

[0249] The opposing member 6, the annular member 8, and the connecting member 9 of the processing unit 2P have substantially the same shape as those of the opposing member 6, the annular member 8, and the connecting member 9 of the processing unit 2 of the first embodiment. However, the structure of the annular member 8 of the processing unit 2P is slightly different from that of the annular member 8 of the first embodiment. Figure 13 This is a view from above of the periphery of the annular member 8 of the processing unit 2P in the second embodiment.

[0250] The annular member 8 of the processing unit 2P has a plurality of recesses 8a formed to avoid interference with the plurality of chuck pins 20. The plurality of recesses 8a, the same number as the plurality of chuck pins 20, are arranged in the rotation direction R at the same intervals as the intervals between the chuck pins 20.

[0251] In the substrate processing apparatus 1 of the second embodiment, the same substrate processing as in the substrate processing apparatus 1 of the first embodiment can be performed (see reference). Figures 6-9 However, in the substrate processing based on the substrate processing apparatus 1 in the second embodiment, the lower surface of the substrate W is protected by spraying rinsing liquid or replacement liquid from the lower surface nozzle 14 (lower surface protection process, protective liquid supply process). In the second embodiment, the lower surface nozzle 14 functions as a protective liquid supply unit. Additionally, by blowing inactive gas toward the lower surface of the substrate W, the ambient gas in the space between the lower surface of the substrate W and the rotating base 21 can be replaced with inactive gas. In this case, the inflow of air (oxygen) into the shielding space SS can be further suppressed.

[0252] According to the second embodiment, the same effects as in the first embodiment are achieved. Furthermore, the second embodiment can also perform… Figure 10A as well as Figure 10B The substrate processing shown can also be applied. Figure 11A as well as Figure 11B The variation shown is an example.

[0253] <Third Implementation>

[0254] Figure 14 This is a schematic partial cross-sectional view illustrating the general configuration of the processing unit 2Q included in the substrate processing apparatus 1 according to the third embodiment of the present invention. Figure 14 And the following Figures 15-17 In the middle, regarding the above Figures 1 to 13 The shown components are equivalent to the component designations. Figure 1 The same reference numerals are used in the accompanying drawings, and their descriptions are omitted.

[0255] In the processing unit 2Q of the third embodiment, the extension portion 66Q of the opposing member 6Q and the annular member 8Q of the processing unit 2Q of the first embodiment (see reference 1) Figure 2 )different. Figure 15 This is a cross-sectional view of the periphery of the opposing member 6Q and the annular member 8Q of the processing unit 2Q in the third embodiment.

[0256] The extension portion 66Q of the opposing member 6Q in the third embodiment includes a wide portion 110 whose width in the vertical direction is larger than that of the circular plate portion 65, and a connecting portion 111 that connects the circular plate portion 65 and the wide portion 110. The width of the connecting portion 111 in the vertical direction increases as it tends to move radially outward.

[0257] The connecting portion 111 has an inclined lower surface 111a, which is connected to the opposing surface 6a and is inclined downward as it tends to move radially outward. The wide portion 110 has a vertical cylindrical surface 110a connected to the inclined lower surface 111a and extending in the vertical direction, and a flat lower surface 110b connected to the lower end of the vertical cylindrical surface 110a and flat in the horizontal direction.

[0258] The guide surface 85 is connected to the upper end of the inner end face 84 and the radially inner end of the discharge path dividing surface 86. The guide surface 85 is flat in the horizontal direction. The discharge path dividing surface 86 includes an inclined dividing surface 86A connected to the radially outer end of the guide surface 85 and inclined downward as it tends to be radially outward, and a vertical dividing surface 86B connected to the radially outer end of the inclined dividing surface 86A and extending in the vertical direction.

[0259] The processing liquid discharge path 10Q of the third embodiment includes an inclined discharge path 120 connected to the blocking space SS and divided by an inclined lower surface 111a and an inclined dividing surface 86A, and a vertical discharge path 121 connected to the inclined discharge path 120 and divided by a vertical cylindrical surface 110a and a vertical dividing surface 86B. The inlet 10Qa of the processing liquid discharge path 10Q is located at the radially inner end of the inclined discharge path 120. The outlet 10Qb of the processing liquid discharge path 10Q is located at the lower end of the vertical discharge path 121.

[0260] The width of the treatment fluid discharge path 10Q (discharge path width D3) is the distance between the inclined dividing surface 86A and the inclined lower surface 111a, or the distance between the vertical dividing surface 86B and the vertical cylindrical surface 110a. In the third embodiment, in most parts viewed from above, the width of the blocking space D1 is also significantly larger than the width of the discharge path D3, and the average value of the width of the blocking space D1 is larger than the width of the discharge path D3.

[0261] In the third embodiment, when the opposing member 6 is located at the space-blocking division position, the upper end of the inner end face 84 and the guide surface 85 are at the same height as the upper surface of the substrate W.

[0262] In the substrate processing apparatus 1 of the third embodiment, the same substrate processing as that of the substrate processing apparatus 1 of the first embodiment can be performed (see reference). Figures 6-7F ).

[0263] Next, in the substrate processing of the third embodiment, the case when the processing liquid is discharged from the shielding space SS will be described. Figure 16 This is a schematic diagram illustrating substrate processing using the substrate processing apparatus 1 of the third embodiment.

[0264] Centrifugal force acts on the processing liquid present on the upper surface of the substrate W, and the annular member 8Q is positioned close to the periphery of the upper surface of the substrate W. Therefore, the processing liquid reaching the periphery of the upper surface of the substrate W does not fall downwards through the gap G between the periphery of the substrate W and the annular member 8Q, but moves radially outwards from the periphery of the upper surface of the substrate W to the guide surface 85. That is, the guide surface 85, through the centrifugal force generated by the rotation of the substrate W, causes the processing liquid present on the upper surface of the substrate W to move radially outwards compared to the periphery of the upper surface of the substrate W, thus blocking the gap G with the processing liquid.

[0265] The treatment fluid moving onto the guide surface 85 moves radially outward on the guide surface 85 and flows into the inlet 10Qa of the treatment fluid discharge path 10Q. The treatment fluid flowing into the inlet 10Qa of the treatment fluid discharge path 10Q moves radially outward within the inclined discharge path 120, and then moves downward within the vertical discharge path 121. The treatment fluid is then discharged from the outlet 10Qb.

[0266] The treatment fluid on the guide surface 85 sometimes collides with the inclined lower surface 111a of the extension portion 66 of the opposing member 6Q. In this case, a backflow (flow tending to be radially inward) occurs in the treatment fluid on the guide surface 85, and a liquid filling portion 100 is formed based on the generation of this backflow.

[0267] In the third embodiment, the inlet 10Qa of the processing liquid discharge path 10Q is located at the boundary between the discharge path dividing surface 86Q and the guide surface 85, which is connected to the outer end of the radially directed guide surface 85. Therefore, even if backflow occurs in the processing liquid, the occurrence point is not on the substrate W, but on the guide surface 85. Therefore, backflow in the processing liquid on the substrate W can be suppressed. Therefore, the generation of particles on the upper surface of the substrate W can be suppressed. Moreover, according to the third embodiment, the same effects as the first embodiment are achieved.

[0268] In the third embodiment, similar to the first embodiment, another example is capable of performing substrate processing. Figure 17 This is a schematic diagram illustrating yet another example of substrate processing using the substrate processing apparatus 1 of the third embodiment. In this other example of substrate processing, the aforementioned... Figure 16The position of the opposing member 6Q shown is called the first blocking space division position. When the opposing member 6Q is located at the first blocking space division position, the upper end of the inner square end face 84 of the annular member 8Q is located at the same height as the upper surface of the substrate W.

[0269] like Figure 17 As shown, in the process of supplying the treatment fluid, the opposing component lifting unit 61 (refer to...) Figure 14 The opposing member 6Q is positioned at the second blocking space division position. The second blocking space division position is the position of the opposing member 6Q when the upper end of the inner end face 84 of the annular member 8Q is above the upper surface of the substrate W, and the blocking space SS is divided using the substrate W, the opposing member 6Q, and the annular member 8Q.

[0270] With the opposing member 6Q in the second blocking space division position, the central nozzle 11 (see reference) faces the upper surface of the substrate. Figure 14 The process liquid, such as a pharmaceutical solution, is supplied. Thus, a liquid accumulation 101 containing the process liquid is formed by receiving the process liquid through the inner square end face 84 of the annular member 8Q and the upper surface of the substrate W (liquid accumulation formation process). The upper surface of the substrate W is then treated with the process liquid in the liquid accumulation 101. Therefore, if the amount of process liquid required to form the liquid accumulation 101 is supplied to the upper surface of the substrate W, the upper surface of the substrate W can be treated. Therefore, compared to a configuration where the process liquid supplied to the upper surface of the substrate W is not received by the inner square end face 84 and is discharged outside the substrate W, the consumption of process liquid can be reduced.

[0271] Then, after a predetermined time has elapsed since the formation of liquid accumulation 101, the opposing member lifting unit 61 moves the opposing member 6Q to the first blocking space division position. That is, it moves the upper end of the inner square end face 84 of the annular member 8Q to the same position as the upper surface of the substrate W (see reference). Figure 16 Thus, the processing liquid present on the upper surface of the substrate W is released from the state of being received by the inner end face. Therefore, the processing liquid moves radially outward by centrifugal force, and the accumulated liquid 101 is discharged from the upper surface of the substrate W (liquid discharge process).

[0272] The processing liquid, moving outwards towards the periphery of the substrate W by centrifugal force, flows smoothly into the processing liquid discharge path 10 via the guide surface 85 (see reference). Figure 16 Therefore, particles can be generated on the upper surface of the substrate W.

[0273] <Fourth Implementation>

[0274] Figure 18 This is a schematic partial cross-sectional view illustrating the general configuration of the processing unit 2R included in the substrate processing apparatus 1 according to the fourth embodiment of the present invention. Figure 18 In the middle, regarding the above Figures 1 to 17 The shown components are equivalent to the component designations. Figure 1 The same reference numerals are used in the accompanying drawings, and their descriptions are omitted.

[0275] In the processing unit 2R of the fourth embodiment, the substrate is held in the same form as in the processing unit 2Q of the third embodiment (see reference). Figure 14 The processing unit 2R of the fourth embodiment is different. It is a configuration obtained by combining the opposing member 6Q and the annular member 8Q of the third embodiment and the rotating chuck 5P of the second embodiment.

[0276] In the substrate processing apparatus 1 of the fourth embodiment, the same substrate processing as that of the substrate processing apparatus 1 of the first embodiment can be performed (see reference). Figures 6-7F The situation regarding the discharge of the treatment fluid from the shielded space SS is the same as described in the third embodiment (see [reference]). Figure 16 ).

[0277] In the substrate processing based on the substrate processing apparatus 1 in the fourth embodiment, the lower surface of the substrate W is protected by spraying rinsing liquid or replacement liquid from the lower surface nozzle 14 (lower surface protection process, protective liquid supply process). In this case, the lower surface nozzle 14 functions as a protective liquid supply unit.

[0278] Alternatively, an inactive gas can be blown toward the lower surface of the substrate W to replace the ambient gas in the space between the lower surface of the substrate W and the rotating base 21. In this case, the inflow of oxygen into the shielding space SS can be further suppressed.

[0279] According to the fourth embodiment, the same effects as in the first embodiment are achieved. Furthermore, in the fourth embodiment, similar to the third embodiment, it is also possible to perform… Figure 17 Another example of substrate processing is shown.

[0280] <Fifth Implementation>

[0281] Figure 19 This is a schematic partial cross-sectional view illustrating the general configuration of the processing unit included in the substrate processing apparatus according to the fifth embodiment of the present invention. Figure 19 In the middle, regarding the above Figures 1 to 18 The shown components are equivalent to the component designations. Figure 1 The same reference numerals are used in the accompanying drawings, and their descriptions are omitted.

[0282] The lifting and rotating structure of the opposing member 6Q and the annular member 8Q in the processing unit 2S of the fifth embodiment is the same as that in the processing unit 2R of the fourth embodiment (see reference). Figure 18The processing unit 2S in the fifth embodiment is different. The opposing member 6Q and the annular member 8Q are raised and lowered by the support member lifting unit 131 and rotated by the rotary motor 23. The support member lifting unit 131 is a unit that raises and lowers the support member 130 that is suspended to support the opposing member 6Q.

[0283] The differences between the processing unit 2S in the fifth embodiment and the processing unit 2R in the fourth embodiment will be described in detail below.

[0284] The opposing member 6Q in the fifth embodiment also includes a plurality of flange portions 63 extending horizontally from the upper end of the hollow shaft 60. The opposing member 6Q can, for example, engage with the rotating base 21 using magnetic force. In detail, a plurality of first engaging portions 135 provided on the annular member 8Q and a plurality of second engaging portions 136 provided on the rotating base 21 are attracted to each other by magnetic force, thereby engaging in a concave-convex manner.

[0285] A plurality of first engaging portions 135 extend downward from the lower surface of the annular member 8Q. The plurality of first engaging portions 135 are spaced apart from each other in the circumferential direction (rotation direction R) about the rotation axis A1. A plurality of second engaging portions 136 are spaced apart from each other in the circumferential direction (rotation direction R) about the rotation axis A1 and are arranged radially outward on the upper surface of the rotating base 21 compared to the plurality of chuck pins 20.

[0286] When the first engaging portion 135 of each annular member 8Q engages with the corresponding second engaging portion 136 of the rotating base 21, the opposing member 6Q and the annular member 8Q can rotate integrally with the rotating base 21. The rotary motor 23 also functions as an opposing member rotation unit that rotates the opposing member 6Q and the annular member 8Q about the rotation axis A1. When the opposing member 6Q is in the blocking space division position, the annular member 8Q engages with the rotating base 21 (see reference). Figure 19 (The double-dotted line).

[0287] The support member 130 includes: a counter member support portion 132 that supports the counter member 6Q; a nozzle support portion 133 that is disposed above the counter member support portion 132 and supports the housing 30 of the central nozzle 11; and a wall portion 134 that connects the counter member support portion 132 and the nozzle support portion 133 and extends in the vertical direction.

[0288] The opposing member support portion 132 supports the flange portion 63 of the opposing member 6Q from below.

[0289] A cylindrical insertion hole 132a for inserting the hollow shaft 60 is formed in the center of the opposing member support portion 132.

[0290] Each flange portion 63 has a positioning hole 63a extending through the flange portion 63 in the vertical direction. The opposing member support portion 132 has a engaging protrusion 132b that engages with the corresponding positioning hole 63a of the flange portion 63. By engaging the corresponding engaging protrusion 132b with each positioning hole 63a, the opposing member 6Q and the annular member 8Q are positioned relative to the support member 130 in the rotational direction R.

[0291] The support member lifting unit 131 includes, for example, a ball screw mechanism (not shown) for lifting the support member 130, and an electric motor (not shown) for applying driving force to the ball screw mechanism. The support member lifting unit 131 is controlled by the controller 3 (see reference). Figure 5 (The double-dotted line).

[0292] The support member lifting unit 131 enables the support member 130 to be positioned in the upper position. Figure 19 The position shown by the solid line in the middle) to the position below ( Figure 19 The specified height positions are indicated by double-dotted lines. The lower position is the position where the support member 130 is closest to the upper surface of the rotating base 21 within its movable range. The upper position is the position where the support member 130 is furthest from the upper surface of the rotating base 21 within its movable range.

[0293] When the support member 130 is in the upper position, it is supported by the suspended opposing member 6Q. The support member 130 is raised and lowered by the support member lifting unit 131, thereby passing through the engaged position between the upper and lower positions.

[0294] The support member 130 descends together with the opposing member 6Q and the annular member 8Q from the upper position to the engaged position. If the support member 130 reaches the engaged position, it transfers the opposing member 6Q and the annular member 8Q to the rotating base 21. If the support member 130 reaches the lower position compared to the engaged position, it separates from the opposing member 6Q.

[0295] If the support member 130 rises from the lower position and reaches the engaged position, it receives the opposing member 6Q and the annular member 8Q from the rotating base 21. The support member 130 rises from the engaged position to the upper position along with the opposing member 6Q and the annular member 8Q.

[0296] In this way, the opposing member 6Q and the annular member 8Q are raised and lowered relative to the rotating base 21 by the support member 130 and the support member lifting unit 131. Therefore, the support member lifting unit 131 functions as the opposing member lifting unit.

[0297] In the substrate processing apparatus 1 of the fifth embodiment, the same substrate processing as in the substrate processing apparatus 1 of the fourth embodiment can be performed. However, in the substrate processing of the fifth embodiment, when the support member 130 is in the lower position ( Figure 19 In the state indicated by the double-dotted line, the ambient gas replacement process (step S3) to the rotary drying process (step S8) are performed. Therefore, when the processing liquid is supplied to the upper and lower surfaces of the substrate W, the opposing member 6Q and the annular member 8Q can be reliably rotated synchronously with the substrate W.

[0298] According to the configuration of the fifth embodiment, it achieves the same effect as the first embodiment.

[0299] <Other Implementation Methods>

[0300] The present invention is not limited to the embodiments described above, and can also be implemented in other forms.

[0301] For example, unlike the embodiments described above, this method can be applied to substrate processing where a polymer layer forming liquid used to form a polymer layer on the upper surface of the substrate W is used as the processing liquid. Examples of polymer layer forming liquids include hydrophobic agents that make the surface of the substrate W hydrophobic. A sacrificial layer is formed by reacting with the SiO2 film on the surface of the pattern formed on the surface of the substrate W.

[0302] As hydrophobic agents, for example, silicon-based hydrophobic agents that make silicon itself and compounds containing silicon hydrophobic, or metal-based hydrophobic agents that make metal itself and compounds containing metal hydrophobic, can be used.

[0303] Metal-based hydrophobic agents include, for example, amines having hydrophobic groups and at least one organosilicon compound. Silicon-based hydrophobic agents include, for example, silane coupling agents. Silane coupling agents include, for example, HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilanes, alkyldisilazanes, and at least one non-chlorinated hydrophobic agent. Non-chlorinated hydrophobic agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and at least one organosilicon compound.

[0304] Polymer layer forming liquid is relatively expensive, therefore, it is desirable to reduce its consumption. As described in the above embodiment, the method of forming a polymer layer forming liquid accumulation 101 on the upper surface of the substrate W and treating the upper surface of the substrate W is effective.

[0305] Furthermore, in the first and second embodiments, the connecting portion 81 has an inclined lower surface 81a that slopes downwards as it tends to move radially outwards. However, the connecting portion 81 may also not have an inclined lower surface 81a that slopes downwards as it tends to move radially outwards, but rather... Figure 3 As shown by the double-dotted line, it has a lower surface that forms a plane with the opposing surface 6a. In this case, the treatment liquid on the guide surface 85 collides with the radially inner end face 80b of the wide portion 80 of the extension portion 66 of the opposing member 6 before flowing into the treatment liquid discharge path 10, thereby generating a backflow in the treatment liquid on the guide surface 85.

[0306] Furthermore, in the above embodiment, the connecting member 9 is a cylindrical shape extending in the vertical direction. This differs from the embodiment described above, such as... Figure 20 As shown, each connecting structural member 9 can also be formed in a manner that, when viewed from above, tends to the downstream side RD of the rotation direction R of the substrate W as it tends to be radially outward.

[0307] When the substrate W is rotating, an airflow F is easily generated in the blocking space SS, which tends to move radially outward and towards the downstream side RD of the rotation direction R (refer to...). Figure 9 If the connecting structure 9 is formed such that it tends towards the downstream side RD of the rotation direction R of the substrate W in a radially outward manner when viewed from above, it can promote the generation of airflow that tends towards the downstream side RD of the rotation direction R in a radially outward manner. Therefore, it is possible to further suppress airflow turbulence.

[0308] In addition, in the above embodiment, the connecting member 9 is provided in the treatment liquid discharge path 10, but the connecting member 9 can also be provided in the blocking space SS. In this case, although not shown, it is connected to the guide surface 85 and the inclined lower surface 81a.

[0309] The embodiments of the present invention have been described in detail above, but these are merely specific examples used to clarify the technical content of the present invention. The present invention is not limited or interpreted by these specific examples, and the scope of the present invention is limited only by the scope of the appended claims.

[0310] This application corresponds to Japan Patent Application No. 2019-133864 filed with the Japan Patent Office on July 19, 2019, the entire disclosure of which is incorporated herein by reference.

[0311] Explanation of reference numerals in the attached figures

[0312] 1: Substrate processing device

[0313] 3: Controller

[0314] 5: Rotary chuck (substrate holding unit)

[0315] 5P: Rotary chuck (substrate holding unit)

[0316] 6: Opposite components

[0317] 6Q: Opposite component

[0318] 6a: Opposite surface

[0319] 8: Ring-shaped component

[0320] 8Q: Ring-shaped component

[0321] 9: Connecting structural components

[0322] 10: Treatment fluid discharge path

[0323] 10Q: Treatment fluid discharge path

[0324] 10a: Inlet

[0325] 10Qa: Flow Inlet

[0326] 10b: Discharge outlet

[0327] 11: Central nozzle (processing fluid supply unit, inactive gas supply unit)

[0328] 12: First lower surface nozzle (protective fluid supply unit)

[0329] 13: Second lower surface nozzle (protective fluid supply unit)

[0330] 14: Lower surface nozzle (protective fluid supply unit)

[0331] 23: Rotary motor (base plate rotation unit, opposing component rotation unit)

[0332] 61: Lifting unit for opposing components

[0333] 62: Opposing component rotation unit

[0334] 65: Circular plate section

[0335] 66: Extension Department

[0336] 66Q: Extension Department

[0337] 71A: First Shield

[0338] 71B: Second Shield

[0339] 74: Protective Cover Lifting Unit

[0340] 75A: First cylindrical section

[0341] 75B: Second cylindrical section

[0342] 76A: First Circular Part

[0343] 76B: Second Circular Section

[0344] 84: Inner square end face

[0345] 85: Guiding surface

[0346] 86: Road dividing surface

[0347] 101: Fluid accumulation

[0348] D1: Width of the blocking space (width of the blocking space in the vertical direction)

[0349] D3: Discharge path width (width of the treatment fluid discharge path)

[0350] SS: Enclosed Space

[0351] W: substrate.

Claims

1. A substrate processing apparatus, characterized in that, include: The substrate holding unit keeps the substrate horizontal; A substrate rotating unit that rotates the substrate holding unit about a vertical axis passing through the central portion of the substrate held by the substrate holding unit. A processing liquid supply unit that supplies processing liquid to the upper surface of the substrate held by the substrate holding unit; An inactive gas supply unit that supplies inactive gas toward the upper surface of the substrate held by the substrate holding unit; The opposing member has a circular plate portion having an opposing surface that faces the substrate held by the substrate holding unit from above, and an extension portion extending outward in a radial direction about the vertical axis from the circular plate portion. A ring-shaped member surrounding the substrate held by the substrate holding unit when viewed from above; The opposing member lifting unit raises and lowers the opposing member and the annular member together by using the substrate held by the substrate holding unit, the opposing member, and the annular member to divide a shielding space that restricts the inflow of ambient gas from the outside. as well as The controller controls the substrate rotation unit, the processing liquid supply unit, the inactive gas supply unit, and the opposing component lifting unit. The annular member has a guiding surface that, when the substrate rotating unit rotates the substrate held by the substrate holding unit, uses centrifugal force to guide the processing liquid present on the upper surface of the substrate toward the radially outward periphery of the substrate. The extension portion and the annular member are used to define a discharge path for the treatment liquid present on the guide surface to be discharged out of the shielding space. The guiding surface has an inclined surface that slopes upwards as it tends towards the radially outward direction. The controller is programmed to perform the following steps: a blocking space division step, which involves moving the opposing member and the annular member using the opposing member lifting unit to divide the blocking space; an ambient gas replacement step, which involves replacing the ambient gas in the blocking space with an inactive gas by supplying an inactive gas from the inactive gas supply unit toward the upper surface of the substrate; a processing liquid supply step, which involves supplying processing liquid from the processing liquid supply unit to the upper surface of the substrate while the ambient gas in the blocking space has been replaced with an inactive gas; and a processing liquid discharge step, which involves rotating the substrate using the substrate rotation unit to discharge the processing liquid on the upper surface of the substrate out of the blocking space via the guide surface and the processing liquid discharge path. The controller is programmed to perform the following steps: in the processing liquid supply step, a liquid accumulation step is performed by supplying processing liquid to the upper surface of the substrate held by the substrate holding unit, and the processing liquid is received by the inclined surface and the upper surface of the substrate to form a liquid accumulation; and in the processing liquid discharge step, a liquid accumulation discharge step is performed by accelerating the rotation of the substrate using the substrate rotation unit to discharge the liquid accumulation from the upper surface of the substrate.

2. The substrate processing apparatus according to claim 1, characterized in that, The width of the treatment fluid discharge path is smaller than the width of the blocking space in the vertical direction.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, The annular member has a discharge path dividing surface, which is connected to the outer end of the radially directed guide surface, thus dividing the treatment liquid discharge path. The treatment liquid discharge path has an inlet at the boundary between the guide surface and the discharge path dividing surface.

4. The substrate processing apparatus according to claim 3, characterized in that, The discharge road dividing surface and the guide surface together form a single flat surface that is flat in the horizontal direction.

5. The substrate processing apparatus according to claim 1 or 2, characterized in that, It also includes a counter-member rotation unit, which causes the counter-member and the annular member to rotate synchronously around the vertical axis with the substrate held by the substrate holding unit.

6. The substrate processing apparatus according to claim 5, characterized in that, It also includes a plurality of connecting structural members that connect the annular member and the opposing member. Each of the connecting structural members, when viewed from above, is formed such that it tends towards the downstream side of the rotation direction of the substrate held by the substrate holding unit as it tends towards the radially outward side.

7. A substrate processing method, characterized in that, include: A substrate holding process that keeps a substrate that is circular in shape when viewed from above as horizontal; In the spatial division process, opposing members having a circular plate portion and an extension portion, as well as an annular member surrounding the substrate in a top view, are moved in the vertical direction. The opposing members, the annular member, and the substrate divide a shielding space that restricts the inflow of ambient gas from the outside. The circular plate portion has an opposing surface that faces the substrate from above, and the extension portion extends outward from the circular plate portion in a radial direction centered on a vertical axis passing through the center of the substrate. An environmental gas replacement process in which an inactive gas is supplied toward the blocked space to replace the ambient gas in the blocked space; A processing liquid supply step, in which processing liquid is supplied to the upper surface of the substrate after the ambient gas in the shielded space has been replaced by an inactive gas; and In the process of draining the processing liquid, with the processing liquid present on the upper surface of the substrate, the substrate is rotated in a rotational direction about the vertical axis. This causes the processing liquid present at the periphery of the upper surface of the substrate to be guided via a guide surface provided on the annular member, forming a processing liquid drain path defined by the extension portion and the annular member, and drained from the processing liquid drain path out of the shielding space. The guiding surface has an inclined surface that slopes upwards as it tends towards the radially outward direction. The processing liquid supply process includes a liquid accumulation formation process, in which processing liquid is supplied to the upper surface of the substrate, and the inclined surface and the upper surface of the substrate are used to receive the processing liquid to form a liquid accumulation. The process fluid discharge step includes a process of removing accumulated fluid from the upper surface of the substrate by accelerating the rotation of the substrate.

8. The substrate processing method according to claim 7, characterized in that, The width of the treatment fluid discharge path is smaller than the width of the blocking space in the vertical direction.

9. The substrate processing method according to claim 7, characterized in that, The annular member has a discharge path dividing surface, which is connected to the outer end of the radially directed guide surface, thus dividing the treatment liquid discharge path. The treatment liquid discharge path has an inlet at the boundary between the guide surface and the discharge path dividing surface.

10. The substrate processing method according to claim 9, characterized in that, The discharge road dividing surface and the guide surface form a single flat surface that is flat in the horizontal direction.

11. The substrate processing method according to claim 7, characterized in that, The process of discharging the treatment liquid also includes a synchronous rotation process in which the annular member and the opposing member rotate synchronously with the substrate around the vertical axis.

12. The substrate processing method according to claim 11, characterized in that, The annular member and the opposing member are connected by a connecting member. The connecting member, when viewed from above, is formed such that it tends towards the downstream side of the substrate in the direction of rotation as it tends towards the radially outward side.

13. The substrate processing method according to claim 7, characterized in that, Prior to the processing liquid supply step, a pre-rinsing step is included, in which rinsing liquid is supplied to the upper surface of the substrate. During the pre-rinsing process, the rinsing fluid supplied to the upper surface of the substrate blocks the gap between the annular member and the substrate and is discharged from the treatment fluid discharge path. The pre-rinsing process and the environmental gas replacement process are performed in parallel.

14. A substrate processing method, characterized in that, include: A substrate holding process that keeps a substrate that is circular in shape when viewed from above as horizontal; In the spatial division process, opposing members having a circular plate portion and an extension portion, as well as an annular member surrounding the substrate in a top view, are moved in the vertical direction. The opposing members, the annular member, and the substrate divide a shielding space that restricts the inflow of ambient gas from the outside. The circular plate portion has an opposing surface that faces the substrate from above, and the extension portion extends outward from the circular plate portion in a radial direction centered on a vertical axis passing through the center of the substrate. An environmental gas replacement process in which an inactive gas is supplied toward the blocked space to replace the ambient gas in the blocked space; A processing liquid supply step, in which processing liquid is supplied to the upper surface of the substrate after the ambient gas in the shielded space has been replaced by an inactive gas; and In the process of draining the processing liquid, with the processing liquid present on the upper surface of the substrate, the substrate is rotated in a rotational direction about the vertical axis. This causes the processing liquid present at the periphery of the upper surface of the substrate to be guided via a guide surface provided on the annular member, forming a processing liquid drain path defined by the extension portion and the annular member, and drained from the processing liquid drain path out of the shielding space. The inner end face of the radially oriented annular member extends in the vertical direction. The upper end of the inner square face is connected to the guide surface. The processing liquid supply process includes a liquid accumulation formation process, in which processing liquid is supplied toward the upper surface of the substrate while the annular member is moved such that the upper end of the inner end face of the annular member is positioned above the upper surface of the substrate. Thus, the processing liquid is received by the inner end face of the annular member and the upper surface of the substrate, thereby forming a liquid accumulation. The process fluid discharge step includes a liquid discharge step, in which the liquid discharge step involves moving the annular member such that the upper end of the inner face of the annular member is at the same height as the upper surface of the substrate to discharge the liquid from the upper surface of the substrate.

15. The substrate processing method according to claim 14, characterized in that, The width of the treatment fluid discharge path is smaller than the width of the blocking space in the vertical direction.

16. The substrate processing method according to claim 14, characterized in that, The annular member has a discharge path dividing surface, which is connected to the outer end of the radially directed guide surface, thus dividing the treatment liquid discharge path. The treatment liquid discharge path has an inlet at the boundary between the guide surface and the discharge path dividing surface.

17. The substrate processing method according to claim 16, characterized in that, The discharge road dividing surface and the guide surface form a single flat surface that is flat in the horizontal direction.

18. The substrate processing method according to claim 14, characterized in that, The process of discharging the treatment liquid also includes a synchronous rotation process in which the annular member and the opposing member rotate synchronously with the substrate around the vertical axis.

19. The substrate processing method according to claim 18, characterized in that, The annular member and the opposing member are connected by a connecting member. The connecting member, when viewed from above, is formed such that it tends towards the downstream side of the substrate in the direction of rotation as it tends towards the radially outward side.

20. The substrate processing method according to claim 14, characterized in that, Prior to the processing liquid supply step, a pre-rinsing step is included, in which rinsing liquid is supplied to the upper surface of the substrate. During the pre-rinsing process, the rinsing fluid supplied to the upper surface of the substrate blocks the gap between the annular member and the substrate and is discharged from the treatment fluid discharge path. The pre-rinsing process and the environmental gas replacement process are performed in parallel.

21. A substrate processing method, characterized in that, include: A substrate holding process that keeps a substrate that is circular in shape when viewed from above as horizontal; In the spatial division process, opposing members having a circular plate portion and an extension portion, as well as an annular member surrounding the substrate in a top view, are moved in the vertical direction. The opposing members, the annular member, and the substrate divide a shielding space that restricts the inflow of ambient gas from the outside. The circular plate portion has an opposing surface that faces the substrate from above, and the extension portion extends outward from the circular plate portion in a radial direction centered on a vertical axis passing through the center of the substrate. An environmental gas replacement process in which an inactive gas is supplied toward the blocked space to replace the ambient gas in the blocked space; A process for supplying a processing liquid to the upper surface of the substrate in a state where the ambient gas in the shielded space has been replaced by an inactive gas. In the process of draining the processing liquid, the substrate is rotated in a rotational direction about the vertical axis while the processing liquid is present on the upper surface of the substrate. As a result, the processing liquid present on the periphery of the upper surface of the substrate is guided through the guide surface provided on the annular member to the processing liquid drain path divided by the extension portion and the annular member, and the processing liquid is drained from the processing liquid drain path to the outside of the shielding space. A cover moving process in which the first cover and the second cover move up and down individually, wherein the first cover has a first cylindrical portion that surrounds the opposing member and the annular member in a top view, and a first annular portion that extends radially inward from the first cylindrical portion; the second cover has a second cylindrical portion that surrounds the opposing member and the annular member in a top view, and a second annular portion that extends radially inward from the second cylindrical portion and is opposite to the first annular portion from below; as well as A protective liquid supply process, performed in parallel with the processing liquid discharge process, involves supplying a protective liquid that protects the lower surface of the substrate towards the lower surface of the substrate. The treatment fluid discharge path has a discharge port that discharges the treatment fluid outward in the radial direction. The process of moving the protective cover includes the following steps: When the treatment liquid is discharged from the outlet, the first shield and the second shield are moved such that the discharge path is located vertically between the inner end of the first annular portion in the radial direction and the inner end of the second annular portion in the radial direction; and The second shield is moved such that the radially inner end of the second annular portion is located below the outlet and above the lower end of the annular member.

22. The substrate processing method according to claim 21, characterized in that, The width of the treatment fluid discharge path is smaller than the width of the blocking space in the vertical direction.

23. The substrate processing method according to claim 21, characterized in that, The annular member has a discharge path dividing surface, which is connected to the outer end of the radially directed guide surface, thus dividing the treatment liquid discharge path. The treatment liquid discharge path has an inlet at the boundary between the guide surface and the discharge path dividing surface.

24. The substrate processing method according to claim 23, characterized in that, The discharge road dividing surface and the guide surface form a single flat surface that is flat in the horizontal direction.

25. The substrate processing method according to claim 21, characterized in that, The process of discharging the treatment liquid also includes a synchronous rotation process in which the annular member and the opposing member rotate synchronously with the substrate around the vertical axis.

26. The substrate processing method according to claim 25, characterized in that, The annular member and the opposing member are connected by a connecting member. The connecting member, when viewed from above, is formed such that it tends towards the downstream side of the substrate in the direction of rotation as it tends towards the radially outward side.

27. The substrate processing method according to claim 21, characterized in that, Prior to the processing liquid supply step, a pre-rinsing step is included, in which rinsing liquid is supplied to the upper surface of the substrate. During the pre-rinsing process, the rinsing fluid supplied to the upper surface of the substrate blocks the gap between the annular member and the substrate and is discharged from the treatment fluid discharge path. The pre-rinsing process and the environmental gas replacement process are performed in parallel.

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