Light emitting device

Abstract

The present application relates to a light-emitting device comprising a first electrode, a second electrode facing the first electrode, and an intermediate layer disposed between the first electrode and the second electrode and comprising a stack of emission layers. The stack of emission layers comprises two or more emission layers, a quantum well layer, a hole transport host, and an electron transport host. The quantum well layer comprises a hole transport compound, and an absolute value of a highest occupied molecular orbital (HOMO) energy of the hole transport compound is greater than an absolute value of a HOMO energy of the hole transport host.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0096113, filed with the Korean Intellectual Property Office on July 31, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The implementation plan involves light-emitting devices and electronic devices including light-emitting devices. Background Technology

[0004] The light-emitting device is a self-emitting device, which, compared with devices in the field, has a wide viewing angle, high contrast, short response time, and excellent characteristics in terms of brightness, driving voltage and response speed.

[0005] In the light-emitting device, a first electrode is placed on a substrate, and a hole transport region, an emitter layer, an electron transport region, and a second electrode are sequentially formed on the first electrode. Holes supplied by the first electrode can move towards the emitter layer through the hole transport region, and electrons supplied by the second electrode can move towards the emitter layer through the electron transport region. Charge carriers such as holes and electrons recombine in the emitter layer, thereby generating light. Summary of the Invention

[0006] The implementation scheme includes devices with improved efficiency and service life compared to existing technology devices.

[0007] Other aspects will be set forth in part in the description which follows and will be apparent in part from the description, or may be learned by practice of the embodiments presented in this disclosure.

[0008] According to the implementation plan, the organic light-emitting device may include

[0009] First electrode,

[0010] The second electrode facing the first electrode.

[0011] An intermediate layer of a stack comprising an emission layer, disposed between the first electrode and the second electrode.

[0012] The stack of emission layers may include two or more emission layers and quantum well layers.

[0013] Hole transport entities and electron transport entities,

[0014] The quantum well layer may contain a hole transport compound, and

[0015] The absolute value of the highest occupied molecular orbital (HOMO) energy of the hole transport compound can be greater than the absolute value of the HOMO energy of the hole transport host.

[0016] In the implementation scheme, the first electrode may be an anode, the second electrode may be a cathode, the intermediate layer may include a hole transport region disposed between the stack of the first electrode and the emitter layer, and the hole transport region may include a hole injection layer, a hole transport layer, an electron blocking layer or any combination thereof.

[0017] In the implementation scheme, the first electrode may be an anode, the second electrode may be a cathode, the intermediate layer may include an electron transport region disposed between the stack of the second electrode and the emitter layer, and the electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer or any combination thereof.

[0018] In one implementation, the quantum well layer may be disposed between the two or more emitter layers.

[0019] In one implementation, the stack of the emitting layers can emit blue light.

[0020] In an implementation scheme, the stack of the emission layers may contain phosphorescent dopants.

[0021] In one embodiment, the intermediate layer may include an electron blocking layer, which may contain a hole transport compound, and the hole transport compound of the electron blocking layer and the hole transport compound of the quantum well layer may be the same as each other.

[0022] In this implementation, the thickness of the electron blocking layer may be greater than the thickness of the quantum well layer.

[0023] In one embodiment, the first electrode may be an anode, the second electrode may be a cathode, and the emitter layer closest to the anode in the stack of emitter layers may contain a hole transport body.

[0024] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, and the emitter layer closest to the cathode in the stack of emitter layers may contain an electron transport body.

[0025] In the implementation scheme, the thickness of the quantum well layer can be from about 3 nm to about 6 nm.

[0026] In the implementation scheme, the first electrode can be an anode, the second electrode can be a cathode, the intermediate layer can include a hole injection layer, a hole transport layer and an electron blocking layer disposed between the stack of the first electrode and the emitter layer, the stack of the emitter layer can include a first emitter layer and a second emitter layer, the first emitter layer can include a hole transport host and an electron transport host, the second emitter layer can include a hole transport host and an electron transport host, and the quantum well layer can be disposed between the first emitter layer and the second emitter layer.

[0027] In an implementation, the first electrode may be an anode, the second electrode may be a cathode, the intermediate layer may include a hole injection layer, a hole transport layer and an electron blocking layer disposed between the stack of the first electrode and the emitter layer, the stack of the emitter layer may include a first emitter layer and a second emitter layer, the first emitter layer may include a hole transport host, the second emitter layer may include an electron transport host, and the quantum well layer may be disposed between the first emitter layer and the second emitter layer.

[0028] In this embodiment, the first electrode may be an anode, the second electrode may be a cathode, the intermediate layer may include a hole injection layer, a hole transport layer, and an electron blocking layer disposed between the stack of the first electrode and the emitter layer, the stack of the emitter layer may include a first emitter layer, a second emitter layer, and a third emitter layer, the quantum well layer may include a first quantum well layer and a second quantum well layer, the first emitter layer may include a hole transport host and an electron transport host, the second emitter layer may include a hole transport host and an electron transport host, the third emitter layer may include a hole transport host and an electron transport host, the first quantum well layer may be disposed between the first emitter layer and the second emitter layer, and the second quantum well layer may be disposed between the second emitter layer and the third emitter layer.

[0029] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, the intermediate layer may include a hole injection layer, a hole transport layer, and an electron blocking layer disposed between the stack of the first electrode and the emitter layer, the stack of the emitter layer may include a first emitter layer, a second emitter layer, and a third emitter layer, the quantum well layer may include a first quantum well layer and a second quantum well layer, the first emitter layer may include a hole transport host, the second emitter layer may include a hole transport host and an electron transport host, the third emitter layer may include an electron transport host, the first quantum well layer may be disposed between the first emitter layer and the second emitter layer, and the second quantum well layer may be disposed between the second emitter layer and the third emitter layer.

[0030] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, the intermediate layer may include a hole injection layer, a hole transport layer, and an electron blocking layer disposed between the stack of the first electrode and the emitter layer, the stack of the emitter layer may include a first emitter layer, a second emitter layer, and a third emitter layer, the quantum well layer may include a first quantum well layer and a second quantum well layer, the first emitter layer may include a hole transport host, the second emitter layer may include a hole transport host, the third emitter layer may include an electron transport host, the first quantum well layer may be disposed between the first emitter layer and the second emitter layer, and the second quantum well layer may be disposed between the second emitter layer and the third emitter layer.

[0031] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, the intermediate layer may include a hole injection layer, a hole transport layer, and an electron blocking layer disposed between the stack of the first electrode and the emitter layer, the stack of the emitter layer may include a first emitter layer, a second emitter layer, and a third emitter layer, the quantum well layer may include a first quantum well layer and a second quantum well layer, the first emitter layer may include a hole transport host, the second emitter layer may include an electron transport host, the third emitter layer may include an electron transport host, the first quantum well layer may be disposed between the first emitter layer and the second emitter layer, and the second quantum well layer may be disposed between the second emitter layer and the third emitter layer.

[0032] According to the implementation plan, the electronic device may include

[0033] The light-emitting device and the thin-film transistor,

[0034] The thin-film transistor may include a source electrode and a drain electrode, and

[0035] The first electrode of the light-emitting device can be electrically connected to at least one of the source electrode and the drain electrode of the thin-film transistor. Attached Figure Description

[0036] The above and other aspects, features and advantages of the embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0037] Figure 1 This is a schematic cross-sectional view of the light-emitting device according to the implementation scheme;

[0038] Figure 2 This is a schematic cross-sectional view of a light-emitting device according to another embodiment; and

[0039] Figure 3This is a schematic cross-sectional view of a light-emitting device according to another embodiment. Detailed Implementation

[0040] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals refer to the same elements throughout. In this respect, the embodiments may take different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only with reference to the accompanying drawings to explain the aspects described.

[0041] For ease of explanation, the dimensions of the elements in the accompanying drawings may be enlarged. Therefore, since the dimensions and thicknesses of the components in the drawings can be arbitrarily illustrated for ease of explanation, the following embodiments of this disclosure are not limited thereto.

[0042] As used herein, expressions such as “a”, “an” and “the” used for the singular are intended to also include the plural form, unless the context clearly indicates otherwise.

[0043] It should be understood that the terms “comprises,” “comprising,” “includes,” “including,” “have,” “having,” “contains,” “containing,” etc., are intended to indicate the presence of the features, integers, steps, operations, elements, components, or combinations thereof specified in this disclosure, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

[0044] In the description, it should be understood that when an element (area, layer, section, etc.) is referred to as being "on", "connected to", or "attached to" another element, it may be directly on, directly connected to, or directly attached to the other element, or one or more intermediate elements may be disposed therebetween.

[0045] As used herein, the term “and / or” includes any and all combinations of one or more of the related listed items. For example, “A and / or B” can be understood to mean “A, B, or A and B”. The terms “and” and “or” can be used in the sense of conjunctions or antonymous conjunctions and can be understood as equivalent to “and / or”.

[0046] For purposes of meaning and interpretation, the term "at least one of..." is intended to include the meaning of "selected from at least one of...". For example, "at least one of A and B" can be understood to mean "A, B, or A and B". When preceding a column of elements, the term "at least one of..." modifies the elements of the entire column but not any individual element in the column.

[0047] It should be understood that although the terms "first," "second," etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of embodiments of the inventive concept, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0048] The terms "below," "down," "above," "up," etc., are used to describe the relationships of the configurations shown in the accompanying drawings. These terms are used as relative concepts and are described with reference to the directions indicated in the drawings.

[0049] As used herein, the terms “about” or “approximately” include a specified value and mean within an acceptable range of deviation from the value as determined by a person skilled in the art taking into account the relevant measurements and errors associated with the measurement of the quantity (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±20%, ±10%, or ±5% of the specified value.

[0050] Unless otherwise defined or implied herein, all terms used (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It should be further understood that terms (e.g., those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and should not be interpreted in an idealized or overly formal sense unless expressly defined in the specification.

[0051] This disclosure provides a light-emitting device, which may include:

[0052] First electrode;

[0053] The second electrode facing the first electrode; and

[0054] An intermediate layer disposed between the first electrode and the second electrode and including the emitter layer of the stack.

[0055] The stack of emission layers may include two or more emission layers and quantum well layers.

[0056] Hole transport entities and electron transport entities,

[0057] Quantum well layers can contain hole transport compounds, and

[0058] The absolute value of the highest occupied molecular orbital (HOMO) energy of a hole-transporting compound can be greater than the absolute value of the HOMO energy of the hole-transporting host.

[0059] In the implementation scheme, the quantum well layer may include one or two layers.

[0060] In the implementation scheme, the first electrode can be an anode, the second electrode can be a cathode, and the intermediate layer can include a hole transport region disposed between the stack of the first electrode and the emitter layer. The hole transport region can include a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof.

[0061] In the implementation scheme, the first electrode can be an anode, the second electrode can be a cathode, the intermediate layer can include an electron transport region disposed between the stack of the second electrode and the emitter layer, and the electron transport region can include a hole blocking layer, an electron transport layer, an electron injection layer or any combination thereof.

[0062] In the implementation scheme, the highest occupied molecular orbital (HOMO) energy of the hole transport compound can be equal to or less than about -6.1 eV. For example, the HOMO energy of the hole transport compound can be from about -6.3 eV to about -6.1 eV.

[0063] In the implementation scheme, the HOMO energy value of the hole transporter can be equal to or less than about -5.8 eV. For example, the HOMO energy value of the hole transporter can be from about -6.0 eV to about -5.8 eV.

[0064] Hole transport can be balanced relative to electron transport in the light-emitting device of this disclosure when the absolute value of the HOMO energy of the hole transport compound in the quantum well layer is greater than the absolute value of the HOMO energy of the hole transport host. At this point, a recombination region of holes and electrons can be formed within the emitter layer, thereby preventing degradation of layers other than the emitter layer and thus simultaneously improving efficiency and lifetime.

[0065] For example, quantum well layers can be composed of hole transport compounds.

[0066] In this implementation, a quantum well layer can be disposed between two or more emission layers. The quantum well layer can be used to structurally control the main light-emitting region.

[0067] For example, when the stack of emitter layers includes two emitter layers, the quantum well layer can be arranged between the two emitter layers.

[0068] For example, when the stack of emitter layers includes a first emitter layer, a second emitter layer, and a third emitter layer, one of the quantum well layers can be disposed between the first emitter layer and the second emitter layer, and the other quantum well layer can be disposed between the second emitter layer and the third emitter layer.

[0069] In implementations, the stack of emitting layers can emit blue light. For example, when the stack of emitting layers includes two emitting layers, the stack of emitting layers including the first and second emitting layers can emit blue light regardless of the color of the light emitted by each of the first and second emitting layers. For example, the first emitting layer can emit white light, the second emitting layer can emit blue light, and the stack of emitting layers including the first and second emitting layers can emit blue light. For example, the first emitting layer can emit blue light, the second emitting layer can emit white light, and the stack of emitting layers including the first and second emitting layers can emit blue light. For example, the first emitting layer can emit blue light, and the second emitting layer can emit blue light. Such examples also apply to cases where the stack of emitting layers includes three emitting layers. For example, when the stack of emitting layers includes a first emitting layer, a second emitting layer, and a third emitting layer, the first emitting layer emits blue light, the second emitting layer emits blue light, and the third emitting layer emits blue light.

[0070] In implementations, the emitter stack may contain phosphorescent dopants. As used herein, "containing phosphorescent dopants" means that all phosphorescent dopants contained in the emitter stack are the same compound. For example, when the emitter stack comprises two emitter layers, each of the first and second emitter layers contains a phosphorescent dopant, and these phosphorescent dopants may be identical to each other. Such examples also apply to cases where the emitter stack comprises three emitter layers. For example, the phosphorescent dopant may be a blue phosphorescent dopant.

[0071] When the phosphorescent dopant is a blue phosphorescent dopant, the central metal or ligand is not particularly restricted, as long as it emits blue light. The following describes phosphorescent dopants.

[0072] In an implementation, the intermediate layer may include an electron blocking layer, which may contain a hole transport compound, and the hole transport compound contained in the electron blocking layer and the hole transport compound contained in the quantum well layer may be the same as each other.

[0073] In this implementation, the electron blocking layer may contact the stack of emitter layers. For example, the electron blocking layer may directly contact the stack of emitter layers.

[0074] In this implementation, the thickness of the electron blocking layer can be greater than the thickness of the quantum well layer. When the electron blocking layer is thicker than the quantum well layer, it can help balance hole and electron transport, and thus create a recombination region of holes and electrons within the emitter layer, thereby preventing degradation of layers other than the emitter layer and thus improving both efficiency and lifetime.

[0075] In this implementation, the first electrode can be an anode, the second electrode can be a cathode, and the emitter layer closest to the anode in the emitter layer stack can contain hole transport entities. For example, the emitter layer closest to the anode in the emitter layer stack can contain only hole transport entities as entities. For example, the emitter layer closest to the anode in the emitter layer stack can contain both hole transport entities and electron transport entities as entities.

[0076] In this implementation, the first electrode can be an anode, the second electrode can be a cathode, and the emitter layer closest to the cathode in the emitter layer stack can contain an electron transport host. For example, the emitter layer closest to the cathode in the emitter layer stack can contain only an electron transport host as the host. For example, the emitter layer closest to the cathode in the emitter layer stack can contain both an electron transport host and a hole transport host as the host.

[0077] In this implementation, the thickness of the quantum well layer in the light-emitting device can be from about 3 nm to about 6 nm. For example, the thickness of the quantum well layer can be from about 4 nm to about 5 nm. When the thickness of the quantum well layer is within these ranges and the thickness of the electron blocking layer is greater than the thickness of the quantum well layer, hole transport can be balanced relative to electron transport, and therefore, a recombination region of holes and electrons can be formed inside the emission layer, thereby preventing degradation of layers other than the emission layer, and thus improving both efficiency and lifetime. For example, the thickness of the electron blocking layer can be from about 6 nm to about 8 nm.

[0078] In the implementation scheme, in the light-emitting device, the first electrode can be an anode, the second electrode can be a cathode, and the intermediate layer can include a hole injection layer, a hole transport layer, and an electron blocking layer between the stack of the first electrode and the emitting layer.

[0079] The stack of emitter layers may include a first emitter layer and a second emitter layer.

[0080] The first emission layer may include a hole transport module and an electron transport module.

[0081] The second emission layer may include a hole transport entity and an electron transport entity, and

[0082] A quantum well layer can be disposed between the first emitter layer and the second emitter layer. For example, an electron blocking layer can contact an electron transport layer. For example, the first emitter layer can contact both the electron blocking layer and the quantum well layer. For example, the light-emitting device can have an anode / hole injection layer / hole transport layer / electron blocking layer / first emitter layer / quantum well layer / second emitter layer / electron transport layer / cathode structure. For example, the thickness of the quantum well layer can be approximately 5 nm.

[0083] The weight ratio of hole transporters to electron transporters in the first emitter layer can be from about 7:3 to about 5:5, and the weight ratio of hole transporters to electron transporters in the second emitter layer can be from about 7:3 to about 5:5.

[0084] In the implementation scheme, in the light-emitting device, the first electrode can be an anode, the second electrode can be a cathode, and the intermediate layer can include a hole injection layer, a hole transport layer, and an electron blocking layer between the stack of the first electrode and the emitting layer.

[0085] The stack of emitter layers may include a first emitter layer and a second emitter layer.

[0086] The first transmitter layer may contain hole transport entities.

[0087] The second emission layer may include an electronic transmission body, and

[0088] A quantum well layer can be disposed between the first emitter layer and the second emitter layer. For example, an electron blocking layer can contact an electron transport layer. For example, the first emitter layer can contact both the electron blocking layer and the quantum well layer. For example, the first emitter layer can contain only hole transport entities as its main components. For example, the second emitter layer can contain only electron transport entities as its main components.

[0089] For example, the light-emitting device may have an anode / hole injection layer / hole transport layer / electron blocking layer / first emission layer / quantum well layer / second emission layer / electron transport layer / cathode structure. For example, the thickness of the quantum well layer may be about 5 nm.

[0090] In the implementation scheme, in the light-emitting device, the first electrode can be an anode, the second electrode can be a cathode, and the intermediate layer can include a hole injection layer, a hole transport layer, and an electron blocking layer between the stack of the first electrode and the emitting layer.

[0091] The stack of emitter layers may include a first emitter layer, a second emitter layer, and a third emitter layer.

[0092] A quantum well layer may include a first quantum well layer and a second quantum well layer.

[0093] The first emission layer may include a hole transport module and an electron transport module.

[0094] The second emission layer may include a hole transport entity and an electron transport entity, and

[0095] The third emission layer may include hole transport entities and electron transport entities, and

[0096] The first quantum well layer can be disposed between the first emitter layer and the second emitter layer, and the second quantum well layer can be disposed between the second emitter layer and the third emitter layer. For example, the electron blocking layer can contact the electron transport layer. For example, the first emitter layer can contact the electron blocking layer and the first quantum well layer.

[0097] For example, the light-emitting device may have an anode / hole injection layer / hole transport layer / electron blocking layer / first emission layer / first quantum well layer / second emission layer / second quantum well layer / third emission layer / electron transport layer / cathode structure. For example, the thickness of the first quantum well layer may be about 3 nm. For example, the thickness of the second quantum well layer may be about 3 nm.

[0098] The weight ratio of hole transporters to electron transporters in the first emitter layer can be from about 7:3 to about 5:5, the weight ratio of hole transporters to electron transporters in the second emitter layer can be from about 7:3 to about 5:5, and the weight ratio of hole transporters to electron transporters in the third emitter layer can be from about 7:3 to about 5:5.

[0099] In the implementation scheme, in the light-emitting device, the first electrode can be an anode, the second electrode can be a cathode, and the intermediate layer can include a hole injection layer, a hole transport layer, and an electron blocking layer between the stack of the first electrode and the emitting layer.

[0100] The stack of emitter layers may include a first emitter layer, a second emitter layer, and a third emitter layer.

[0101] A quantum well layer may include a first quantum well layer and a second quantum well layer.

[0102] The first transmitter layer may contain hole transport entities.

[0103] The second emission layer may include a hole transport entity and an electron transport entity, and

[0104] The third emission layer may include an electronic transmission body, and

[0105] The first quantum well layer can be disposed between the first emitter layer and the second emitter layer, and the second quantum well layer can be disposed between the second emitter layer and the third emitter layer. For example, the electron blocking layer can contact the electron transport layer. For example, the first emitter layer can contact the electron blocking layer and the first quantum well layer. For example, the first emitter layer can contain only hole transport entities as the main body. For example, the third emitter layer can contain only electron transport entities as the main body.

[0106] For example, the light-emitting device may have an anode / hole injection layer / hole transport layer / electron blocking layer / first emission layer / first quantum well layer / second emission layer / second quantum well layer / third emission layer / electron transport layer / cathode structure. For example, the thickness of the first quantum well layer may be about 3 nm. For example, the thickness of the second quantum well layer may be about 3 nm.

[0107] The weight ratio of hole transporters to electron transporters in the second emitter layer can be from approximately 7:3 to approximately 5:5.

[0108] In the implementation scheme, in the light-emitting device, the first electrode can be an anode, the second electrode can be a cathode, and the intermediate layer can include a hole injection layer, a hole transport layer, and an electron blocking layer between the stack of the first electrode and the emitting layer.

[0109] The stack of emitter layers may include a first emitter layer, a second emitter layer, and a third emitter layer.

[0110] A quantum well layer may include a first quantum well layer and a second quantum well layer.

[0111] The first transmitter layer may contain hole transport entities.

[0112] The second transmitter layer may contain hole transport entities.

[0113] The third emission layer may include an electronic transmission body, and

[0114] The first quantum well layer can be disposed between the first emitter layer and the second emitter layer, and the second quantum well layer can be disposed between the second emitter layer and the third emitter layer. For example, the electron blocking layer can contact the electron transport layer. For example, the first emitter layer can contact the electron blocking layer and the first quantum well layer. For example, the first emitter layer and the second emitter layer can each contain only hole transport entities as entities. For example, the third emitter layer can contain only electron transport entities as entities.

[0115] For example, the light-emitting device may have an anode / hole injection layer / hole transport layer / electron blocking layer / first emission layer / first quantum well layer / second emission layer / second quantum well layer / third emission layer / electron transport layer / cathode structure. For example, the thickness of the first quantum well layer may be about 3 nm. For example, the thickness of the second quantum well layer may be about 3 nm.

[0116] In the implementation scheme, in the light-emitting device, the first electrode can be an anode, the second electrode can be a cathode, and the intermediate layer can include a hole injection layer, a hole transport layer, and an electron blocking layer between the stack of the first electrode and the emitting layer.

[0117] The stack of emitter layers may include a first emitter layer, a second emitter layer, and a third emitter layer.

[0118] A quantum well layer may include a first quantum well layer and a second quantum well layer.

[0119] The first transmitter layer may contain hole transport entities.

[0120] The second emission layer may contain an electron transmission body.

[0121] The third emission layer may include an electronic transmission body, and

[0122] The first quantum well layer can be disposed between the first emitter layer and the second emitter layer, and the second quantum well layer can be disposed between the second emitter layer and the third emitter layer. For example, the electron blocking layer can contact the electron transport layer. For example, the first emitter layer can contact the electron blocking layer and the first quantum well layer. For example, the first emitter layer can contain only hole transport entities as the main body. For example, the second emitter layer and the third emitter layer can each contain only electron transport entities as the main body.

[0123] For example, the light-emitting device may have an anode / hole injection layer / hole transport layer / electron blocking layer / first emission layer / first quantum well layer / second emission layer / second quantum well layer / third emission layer / electron transport layer / cathode structure. For example, the thickness of the first quantum well layer may be about 3 nm. For example, the thickness of the second quantum well layer may be about 3 nm.

[0124] When the emitter layer contains both hole transport entities and electron transport entities, and the weight ratio of the hole transport entities to the electron transport entities is within the above range, hole transport can be balanced relative to electron transport. Therefore, a recombination region of holes and electrons can be formed inside the emitter layer, thereby preventing the degradation of layers other than the emitter layer and thus improving efficiency and lifespan simultaneously.

[0125] Another aspect of this disclosure provides an electronic device including a light-emitting device and a thin-film transistor, wherein the thin-film transistor includes a source electrode and a drain electrode, and

[0126] The first electrode of the light-emitting device is electrically connected to at least one of the source electrode and the drain electrode of the thin-film transistor.

[0127] In the implementation scheme, the electronic device may further include a color filter, a color conversion layer, a touch screen layer, a polarization layer, or any combination thereof.

[0128] As used herein, the term "intermediate layer" refers to a single layer or all layers located between the first and second electrodes of the light-emitting device.

[0129] [ Figure 1 [Description]

[0130] Figure 1This is a schematic cross-sectional view of the light-emitting device 10 according to an embodiment. The light-emitting device 10 includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0131] In the following text, we will discuss... Figure 1 The structure of the light-emitting device 10 according to the embodiment and the method of manufacturing the light-emitting device 10 are described.

[0132] [First Electrode 110]

[0133] exist Figure 1 In this embodiment, the substrate may additionally be located below the first electrode 110 or above the second electrode 150. In some embodiments, the substrate may be a glass substrate or a plastic substrate. In others, the substrate may be a flexible substrate. For example, the substrate may comprise a plastic with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or combinations thereof.

[0134] The first electrode 110 can be formed, for example, by depositing or sputtering a material for forming the first electrode 110 onto a substrate. When the first electrode 110 is an anode, a high work function material that can be easily injected with holes can be used as the material for forming the first electrode 110.

[0135] The first electrode 110 can be a reflective electrode, a semi-transparent electrode, or a transmissive electrode. In an embodiment, when the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 can include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In an embodiment, when the first electrode 110 is a semi-transparent electrode or a reflective electrode, the material used to form the first electrode 110 can include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0136] The first electrode 110 may have a single-layer structure consisting of a single layer or a multi-layer structure including multiple layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0137] [Middle Layer 130]

[0138] Intermediate layer 130 is located on first electrode 110. Intermediate layer 130 may include an emitter layer.

[0139] The intermediate layer 130 may further include a hole transport region located between the first electrode 110 and the emitter layer and an electron transport region located between the emitter layer and the second electrode 150.

[0140] In addition to various organic materials, the intermediate layer 130 may further contain metal-containing compounds (e.g., organometallic compounds), inorganic materials (e.g., quantum dots), etc.

[0141] In an embodiment, the intermediate layer 130 may include i) two or more emission layers sequentially stacked between the first electrode 110 and the second electrode 150, and ii) a charge generation layer located between the two emission layers. When the intermediate layer 130 includes an emission layer and a charge generation layer, the light-emitting device 10 may be a series light-emitting device.

[0142] [Hole transport region in intermediate layer 130]

[0143] Hole transport regions can have: i) a single-layer structure consisting of a single layer made of a single material, ii) a single-layer structure consisting of a single layer made of different materials, or iii) a multi-layer structure including layers containing different materials.

[0144] The hole transport region may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof.

[0145] For example, the hole transport region may have a multilayer structure including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, a hole transport layer / emission auxiliary layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, wherein in each structure, the layers are stacked sequentially on the first electrode 110.

[0146] The hole transport region may contain a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0147] [Formula 201]

[0148]

[0149] [Equation 202]

[0150]

[0151] In Equations 201 and 202,

[0152] L 201 To L 204 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0153] L205 It can be *-O-*', *-S-*', or *-N(Q) 201 )-*', unsubstituted or by at least one R 10a Replacement C1-C 20 alkylene groups, unsubstituted or with at least one R 10a Replacement C2-C 20 alkenyl groups, unsubstituted or with at least one R 10a Replacement C3-C 60 Carbocyclic group, or unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups,

[0154] xa1 to xa4 are each an independent integer from 0 to 5.

[0155] xa5 is an integer from 0 to 10.

[0156] R 201 To R 204 and Q 201 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0157] In Equation 202, R 201 and R 202 It can be optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form unsubstituted or substituted groups with at least one R group. 10a Replacement C8-C 60 Polycyclic groups (e.g., carbazole groups, etc.) (e.g., see compound HT16),

[0158] In Equation 202, R 203 and R 204 It can be optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form unsubstituted or substituted groups with at least one R group. 10a Replacement C8-C 60 Polycyclic groups, and

[0159] na1 can be an integer from 1 to 4.

[0160] In the embodiments, formulas 201 and 202 may each contain at least one of the groups represented by formulas CY201 to CY217:

[0161]

[0162] In formulas CY201 to CY217, R 10b and R 10c Each can be related to R. 10a The descriptions are the same, CY ring 201 To CY 204 Each can be C3-C independently. 20 Carbocyclic groups or C1-C 20 Heterocyclic groups, and at least one hydrogen atom in formulas CY201 to CY217 can be replaced by at least one R 10a replace.

[0163] In the implementation plan, the ring CY in formulas CY201 to CY217 201 To CY 204 Each group can be an independent phenyl group, naphthol group, phenanthrene group, or anthracene group.

[0164] In the embodiments, Formula 201 and Formula 202 may each contain at least one of the groups represented by Formula CY201 to Formula CY203.

[0165] In an embodiment, formula 201 may include at least one of the groups represented by formulas CY201 to CY203 and at least one of the groups represented by formulas CY204 to CY217.

[0166] In the implementation scheme, in equation 201, xa1 can be 1, R 201 It can be a group represented by one of the formulas CY201 to CY203, xa2 can be 0, and R 202 It can be a group represented by one of the formulas CY204 to CY207.

[0167] In the implementation scheme, each of Formulas 201 and 202 may not contain a group represented by Formulas CY201 to CY203.

[0168] In the embodiments, each of Formulas 201 and 202 may not contain a group represented by Formulas CY201 to CY203, but may contain at least one of the groups represented by Formulas CY204 to CY217.

[0169] In the implementation scheme, each of Formula 201 and Formula 202 may not contain a group represented by Formula CY201 to Formula CY217.

[0170] For example, the hole transport region may contain one or any combination of compounds HT1 to HT44, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), and polyaniline / poly(4-styrenesulfonate) (PANI / PSS):

[0171]

[0172]

[0173]

[0174]

[0175]

[0176] The compounds represented by Formulas 201 and 202, as well as the compounds described above, may be included in the electron blocking layer and / or quantum well layer. For example, the electron blocking layer and / or quantum well layer may be composed of the compounds represented by Formulas 201 and 202, as well as the compounds described above.

[0177] The thickness of the hole transport region can be approximately to approximately For example, the thickness of the hole transport region can be approximately to approximately When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be approximately to approximately Furthermore, the thickness of the hole transport layer can be approximately to approximately For example, the thickness of the hole injection layer can be approximately to approximately For example, the thickness of the hole transport layer can be approximately to approximately When the thicknesses of the hole transport region, hole injection layer, and hole transport layer are within these ranges, satisfactory hole transport characteristics can be obtained without a significant increase in driving voltage.

[0178] The emission aid layer can increase light emission efficiency by compensating for the optical resonant distance according to the wavelength of the light emitted by the emission layer, and the electron blocking layer can block the flow of electrons from the electron transport region. The emission aid layer may contain materials as described above.

[0179] [p-dopant]

[0180] In addition to these materials, the hole transport region may further contain charge-generating materials to improve conductivity. The charge-generating materials may be uniformly or non-uniformly dispersed in the hole transport region (e.g., in the form of a single layer composed of charge-generating materials).

[0181] The charge-generating material can be, for example, a p-doped agent.

[0182] For example, p-doped agents can have a lowest unoccupied molecular orbital (LUMO) energy level equal to or less than about -3.5 eV.

[0183] In the embodiments, the p-dopant may include quinone derivatives, compounds containing cyano groups, compounds containing elements EL1 and EL2, or any combination thereof.

[0184] Examples of quinone derivatives are TCNQ and F4-TCNQ.

[0185] Examples of compounds containing a cyano group are HAT-CN and the compound represented by formula 221:

[0186]

[0187] [Equation 221]

[0188] In Equation 221,

[0189] R 221 To R 223 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups, and

[0190] R 221 To R 223 At least one of them can be independently a C1-C group substituted with: a cyano group; -F; -Cl; -Br; -I; or any combination thereof. 20 Alkyl groups; or C3-C groups substituted with any combination thereof 60 Carbocyclic groups or C1-C 60 Heterocyclic groups.

[0191] Regarding compounds containing elements EL1 and EL2, element EL1 can be a metal, a metalloid, or a combination thereof, and element EL2 can be a nonmetal, a metalloid, or a combination thereof.

[0192] Examples of metals include: alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (C), etc.). (e.g., o), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); later transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); and lanthanides (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.).

[0193] Examples of metalloids are silicon (Si), antimony (Sb), and tellurium (Te).

[0194] Examples of nonmetals are oxygen (O) and halogens (e.g., F, Cl, Br, I, etc.).

[0195] Examples of compounds containing elements EL1 and EL2 are metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, or metal iodides), metal halide (e.g., metal fluorides, metal chlorides, metal bromides, or metal iodides), metal tellurides, or any combination thereof.

[0196] Examples of metal oxides are tungsten oxides (e.g., WO, W2O3, WO2, WO3, or W2O5), vanadium oxides (e.g., VO, V2O3, VO2, or V2O5), molybdenum oxides (e.g., MoO, Mo2O3, MoO2, MoO3, or Mo2O5), and rhenium oxides (e.g., ReO3).

[0197] Examples of metal halides include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.

[0198] Examples of alkali metal halides are LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and CsI.

[0199] Examples of alkaline earth metal halides are BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2.

[0200] Examples of transition metal halides are titanium halides (e.g., TiF4, TiCl4, TiBr4, or TiI4), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, or ZrI4), hafnium halides (e.g., HfF4, HfCl4, HfBr4, or HfI4), vanadium halides (e.g., VF3, VCl3, VBr3, or VI3), niobium halides (e.g., NbF3, NbCl3, NbBr3, or NbI3), and tantalum halides (e.g., TaF3, TaCl3, Ta...). Br3 or TaI3), chromium halides (e.g., CrF3, CrCl3, CrBr3 or CrI3), molybdenum halides (e.g., MoF3, MoCl3, MoBr3 or MoI3), tungsten halides (e.g., WF3, WCl3, WBr3 or WI3), manganese halides (e.g., MnF2, MnCl2, MnBr2 or MnI2), technetium halides (e.g., TcF2, TcCl2, TcBr2 or TcI2), rhenium halides (e.g., ReF2, ReCl2, ReBr... 2 or ReI2), iron halides (e.g., FeF2, FeCl2, FeBr2 or FeI2), ruthenium halides (e.g., RuF2, RuCl2, RuBr2 or RuI2), osmium halides (e.g., OsF2, OsCl2, OsBr2 or OsI2), cobalt halides (e.g., CoF2, CoCl2, CoBr2 or CoI2), rhodium halides (e.g., RhF2, RhCl2, RhBr2 or RhI2), iridium halides (e.g., IrF2, IrCl2, Ir Nickel halides (e.g., NiF2, NiCl2, NiBr2, or NiI2), palladium halides (e.g., PdF2, PdCl2, PdBr2, or PdI2), platinum halides (e.g., PtF2, PtCl2, PtBr2, or PtI2), copper halides (e.g., CuF, CuCl, CuBr, or CuI), silver halides (e.g., AgF, AgCl, AgBr, or AgI), and gold halides (e.g., AuF, AuCl, AuBr, or AuI).

[0201] Examples of post-transition metal halides are zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, or ZnI2), indium halides (e.g., InI3), and tin halides (e.g., SnI2).

[0202] Examples of lanthanide metal halides are YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, and SmI3.

[0203] Examples of metal halide halides are antimony halides (e.g., SbCl5).

[0204] Examples of metal tellurides include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te, or Cs₂Te), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, or BaTe), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, Fe). Te, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe or Au2Te), post-transition metal tellurides (e.g., ZnTe) and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe or LuTe).

[0205] [Emitting layer in intermediate layer 130]

[0206] In an embodiment, when the light-emitting device 10 is a full-color light-emitting device, the emitting layer can be patterned into a red emitting layer, a green emitting layer, and / or a blue emitting layer, depending on the sub-pixel. In an embodiment, the emitting layer may have a stacked structure of two or more layers selected from red, green, and blue emitting layers, wherein the two or more layers are in contact with or spaced apart from each other. In an embodiment, the emitting layer may contain two or more materials selected from red-light-emitting materials, green-light-emitting materials, and blue-light-emitting materials, wherein the two or more materials are mixed in a single layer to emit white light.

[0207] In an implementation, the emission layer may include two or more emission layers. For example, the number of emission layers may be 2 or 3.

[0208] For example, each of the emitting layers can emit blue light.

[0209] The emitting layer may comprise a host and dopants. Dopants may include phosphorescent dopants, fluorescent dopants, or any combination thereof.

[0210] Based on 100 parts by weight of the host, the amount of dopant in the emitter layer can be from about 0.01 parts by weight to about 15 parts by weight.

[0211] In the implementation scheme, the emitter layer may contain quantum dots.

[0212] The emission layer may contain delayed fluorescence material. The delayed fluorescence material can act as either the host or a dopant in the emission layer.

[0213] The thickness of the emission layer can be approximately to approximately For example, the thickness of the emission layer can be approximately to approximately When the thickness of the emitting layer meets the range described above, it can exhibit excellent light-emitting characteristics without a significant increase in driving voltage.

[0214] [main body]

[0215] The hole transport component can be a compound with strong hole-transporting properties. Such a compound with strong hole-transporting properties refers to a compound that readily accepts holes, and this strong hole-transporting property can be achieved by including a portion that readily accepts holes (the hole transport portion).

[0216] Such hole-receptive portions can be, for example, π-electron-rich heteroaromatic groups (e.g., carbazole derivatives or indole derivatives) or aromatic amine groups.

[0217] The electron transport host can be a compound with strong electronic properties. Such compounds with strong electronic properties are those that readily accept electrons, and these strong electronic properties can be achieved by including a portion that readily accepts electrons (the electron transport portion).

[0218] The electron-accepting portion can be, for example, a heteroaromatic compound lacking π electrons. For instance, the electron-accepting portion can be a nitrogen-containing heteroaromatic compound.

[0219] When a compound contains only a hole transport component or only an electron transport component, it is obvious whether the compound is a hole transport compound or an electron transport compound.

[0220] A compound can contain both hole-transporting and electron-transporting components. A simple comparison of the total number of hole-transporting components and the total number of electron-transporting components in a compound can be considered a criterion for predicting whether a compound is a hole-transporting or electron-transporting compound, but it cannot be an absolute criterion. One reason is the fact that the hole-attracting power of a single hole-transporting component is not exactly the same as the electron-attracting power of a single electron-transporting component.

[0221] Therefore, a relatively reliable method for determining whether a compound with a certain structure is a hole-transporting compound or an electron-transporting compound is to directly implement the compound in a device.

[0222] The hole transporter and the electron transporter can each independently comprise a compound represented by formula 301:

[0223] [Formula 301]

[0224] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21

[0225] In Equation 301,

[0226] Ar 301 and L 301 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0227] xb11 can be 1, 2, or 3.

[0228] xb1 can be an integer from 0 to 5.

[0229] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, unsubstituted or with at least one R 10a Replacement C1-C 60 alkyl groups, unsubstituted or with at least one R 10a Replacement C2-C 60 Alkenyl groups, unsubstituted or with at least one R 10a Replacement C2-C 60 The alkynyl group, unsubstituted or with at least one R 10a Replacement C1-C 60 alkoxy group, unsubstituted or with at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 301 (Q) 302 (Q) 303 -N(Q) 301 (Q) 302 -B(Q) 301 (Q) 302 -C(=O)(Q) 301 -S(=O)2(Q) 301 ) or -P(=O)(Q 301 (Q) 302 ),

[0230] xb21 can be an integer from 1 to 5, and

[0231] Q 301 To Q 303 Each can be related to Q. 11 The descriptions are the same.

[0232] In the implementation scheme, when xb11 in formula 301 is 2 or greater than 2, two or more Ar 301 They can be connected to each other via a single key.

[0233] In the implementation scheme, the main body may include a compound represented by formula 301-1, a compound represented by formula 301-2, or any combination thereof:

[0234] [Formula 301-1]

[0235]

[0236] [Formula 301-2]

[0237]

[0238] Among them, in equations 301-1 and 301-2,

[0239] Ring A 301 To Ring A 304 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0240] X 301 It can be O, S, N-[(L 304 ) xb4 -R 304 ]、C(R 304 (R) 305 ) or Si(R 304 (R) 305 ),

[0241] xb22 and xb23 can each be 0, 1, or 2 independently.

[0242] L 301 xb1 and R 301 Each can be the same as described above.

[0243] L 302 To L 304 They can be independently related to L 301 The descriptions are the same.

[0244] xb2 to xb4 can each be independently identical to the description of xb1, and

[0245] R 302 To R 305 and R 311 To R 314 Each can be related to R. 301 The descriptions are the same.

[0246] In the embodiments, the main component may include alkaline earth metal complexes. In the embodiments, the main component may include Be complexes (e.g., compound H55), Mg complexes, Zn complexes, or any combination thereof.

[0247] In the embodiments, the main body may include compounds H1 to H124, 9,10-bis(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphth-2-yl)anthracene (MADN), 9,10-bis(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), and 1,3-bis(carbazol-9-yl)benzene (mCP). One or any combination of the following: 1,3,5-tris(carbazole-9-yl)benzene (TCP), 5-(dibenzo[b,d]furan-4-yl)-1-(4,6-diphenyl-1,3,5-triazin-2-yl)-1H-indole (FITRZ), and 5-(dibenzo[b,d]thiophen-4-yl)-1-(4,6-diphenyl-1,3,5-triazin-2-yl)-1H-indole (TITRZ).

[0248]

[0249]

[0250]

[0251]

[0252]

[0253]

[0254] [Phosphorescent dopant]

[0255] When the phosphorescent dopant is a blue phosphorescent dopant, the central metal or ligand is not particularly restricted, as long as it emits blue color.

[0256] Phosphorescent dopants may contain at least one transition metal as the center metal.

[0257] Phosphorescent dopants may include monodentate ligands, dipentate ligands, tridentate ligands, tetradentate ligands, pentadentate ligands, hexadentate ligands, or any combination thereof.

[0258] Phosphorescent dopants can be electrically neutral.

[0259] For example, phosphorescent dopants can include organometallic compounds represented by formula 401:

[0260] [Formula 401]

[0261] M(L 401 ) xc1 (L 402 ) xc2

[0262] [Formula 402]

[0263]

[0264] In Equations 401 and 402,

[0265] M can be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)).

[0266] L 401 The ligand can be represented by Equation 402, and xc1 can be 1, 2, or 3, wherein when xc1 is 2 or greater than 2, there are two or more L... 401 They can be the same or different from each other.

[0267] L 402 It can be an organic ligand, and xc2 can be 0, 1, 2, 3, or 4, wherein when xc2 is 2 or greater than 2, there are two or more L... 402 They can be the same or different from each other.

[0268] X 401 and X 402 It can be either nitrogen or carbon, each independently.

[0269] Ring A 401 And Ring A 402 Each can be C3-C independently. 60 Carbocyclic groups or C1-C 60 Heterocyclic groups,

[0270] T 401 It can be a single bond, -O-, -S-, -C(=O)-, -N(Q)-, 411 )-、-C(Q 411 (Q) 412)-、-C(Q 411 )=C(Q 412 )-、-C(Q 411 = or = C =,

[0271] X 403 and X 404 These can be chemical bonds (e.g., covalent or coordinate bonds), O, S, N (Q) independently. 413 ), B(Q) 413 ), P(Q 413 ), C(Q 413 (Q) 414 ) or Si(Q 413 (Q) 414 ),

[0272] Q 411 To Q 414 Each can be related to Q. 11 The descriptions are the same.

[0273] R 401 and R 402 Each of these groups can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, unsubstituted, or substituted with at least one R. 10a Replacement C1-C 20 alkyl groups, unsubstituted or with at least one R 10a Replacement C1-C 20 alkoxy group, unsubstituted or with at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 401 (Q) 402 (Q) 403 -N(Q) 401 (Q) 402 -B(Q) 401 (Q) 402 -C(=O)(Q) 401 -S(=O)2(Q) 401 ) or -P(=O)(Q 401 (Q) 402 ),

[0274] Q 401 To Q 403 Each can be related to Q. 11 The descriptions are the same.

[0275] xc11 and xc12 can each be an integer from 0 to 10 independently, and

[0276] In Equation 402, * and *' each represent the binding site with M in Equation 401.

[0277] In the implementation scheme, in formula 402, i)X 401 It can be nitrogen, and X 402 It can be carbon, or ii)X 401 and X 402 Each of them can be nitrogen.

[0278] In the implementation scheme, when xc1 in equation 401 is 2 or greater than 2, two or more L 401 The two rings A in 401 It can be optionally via T as a linking group 402 Connected to each other, or two or more L's 401 The two rings A in 402 It can be optionally via T as a linking group 403 They are interconnected (see compounds PD1 through PD4 and PD7). T 402 and T 403 Each can be related to T. 401 The descriptions are the same.

[0279] In Equation 401, L 402 It can be an organic ligand. For example, L... 402 It can be a halogen group, a diketone group (e.g., an acetylacetonate group), a carboxylic acid group (e.g., a pyridine carboxylate group), a -C (=O) group, an isonitrile group, a -CN group, a phosphorus group (e.g., a phosphine group or a phosphite group), or any combination thereof.

[0280] Phosphorescent dopants may include, for example, one or any combination of the following compounds:

[0281]

[0282]

[0283] [Quantum dot]

[0284] The emitter layer can contain quantum dots.

[0285] As used in this article, quantum dots refer to crystals of semiconductor compounds and can include any material capable of emitting light of various wavelengths depending on the size of the crystal.

[0286] The diameter of a quantum dot can be, for example, from about 1 nm to about 10 nm.

[0287] Quantum dots can be synthesized through wet chemical processes, metal-organic chemical vapor deposition, molecular beam epitaxy, or similar processes.

[0288] Wet chemical processes refer to methods in which organic solvents and precursor materials are mixed and quantum dot crystals are grown. During crystal growth, the organic solvent acts as a dispersant that naturally coordinates to the surface of the quantum dot crystals and controls the crystal growth. Therefore, the growth of quantum dot particles can be controlled using processes that are easier and less expensive to perform compared to vapor deposition processes such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE).

[0289] Quantum dots can include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0290] Examples of group II-VI semiconductor compounds are binary compounds, such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS; ternary compounds, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe; or any combination thereof.

[0291] Examples of group III-V semiconductor compounds are binary compounds, such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, or InSb; ternary compounds, such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, or InPSb; quaternary compounds, such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; or any combination thereof. Group III-V semiconductor compounds may further contain group II elements. Further examples of group III-V semiconductor compounds containing group II elements are InZnP, InGaZnP, and InAlZnP.

[0292] Examples of III-VI semiconductor compounds are binary compounds, such as GaS, GaSe, Ga2Se3, GaTe, InS, In2S3, InSe, In2Se3, or InTe; ternary compounds, such as InGaS3 or InGaSe3; or any combination thereof.

[0293] Examples of group I-III-VI semiconductor compounds are ternary compounds, such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, or AgAlO2; or any combination thereof.

[0294] Examples of group IV-VI semiconductor compounds are binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; quaternary compounds, such as SnPbSSe, SnPbSeTe, or SnPbSTe; or any combination thereof.

[0295] Examples of Group IV elements or compounds are single elements, such as Si or Ge; binary compounds, such as SiC or SiGe; or any combination thereof.

[0296] Each element contained in a multi-element compound (e.g., binary, ternary, and quaternary compounds) may exist in the particles at a uniform or non-uniform concentration.

[0297] Quantum dots can have either a single structure with a uniform concentration of each element contained within the corresponding quantum dot, or a core-shell dual structure. For example, the material contained in the core can differ from the material contained in the shell.

[0298] The shell of a quantum dot can function as a protective layer to maintain semiconductor properties by preventing the chemical degradation of the nucleus, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the nucleus and the shell can have a concentration gradient, where the concentration of elements present in the shell decreases towards the center.

[0299] Examples of the shells for quantum dots are oxides of metals or nonmetals, semiconductor compounds, or any combination thereof. Examples of oxides of metals or nonmetals are binary compounds, such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO; ternary compounds, such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4; or any combination thereof. Examples of semiconductor compounds as described herein are group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, or any combination thereof. Examples of semiconductor compounds are CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0300] The full width at half maximum (FWHM) of the emission wavelength spectrum of quantum dots can be equal to or less than about 45 nm, for example, equal to or less than about 40 nm, or equal to or less than about 30 nm. When the FWHM of the emission wavelength spectrum of quantum dots is within this range, color purity or color reproduction can be improved. Light emitted through such quantum dots can illuminate omnidirectionally. Therefore, a wider viewing angle can be increased.

[0301] Quantum dots can be spherical, pyramidal, multi-armed, or cubic nanoparticles, nanotubes, nanowires, nanofibers, or nanoplate particles.

[0302] By adjusting the size of quantum dots, the band gap can also be adjusted, thereby obtaining light of various wavelengths in the quantum dot emission layer. Therefore, by using quantum dots of different sizes, light-emitting devices that emit light of various wavelengths can be realized. The size of the quantum dots can be selected to emit red, green, and / or blue light. The size of the quantum dots can be adjusted so that various colors of light can be combined to emit white light.

[0303] [Electron transport region in intermediate layer 130]

[0304] The electron transport region can have: i) a single-layer structure consisting of a single layer of a single material, ii) a single-layer structure consisting of a single layer of different materials, or iii) a multi-layer structure including layers containing different materials.

[0305] The electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0306] For example, the electron transport region may have an electron transport layer / electron injection layer structure or a charge control layer / electron transport layer / electron injection layer structure, wherein, in each structure, the layers are stacked sequentially on the emitter layer 130.

[0307] The electron transport region (e.g., a hole-blocking layer or electron transport layer within the electron transport region) may contain C1-C atoms with at least one nitrogen atom lacking π electrons. 60 Metal-free compounds with cyclic groups.

[0308] In the implementation scheme, the electron transport region may contain a compound represented by formula 601:

[0309] [Formula 601]

[0310] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0311] In Equation 601,

[0312] Ar 601 and L 601 Each can be independently unsubstituted or by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0313] xe11 can be 1, 2, or 3.

[0314] xe1 can be 0, 1, 2, 3, 4, or 5.

[0315] R 601 It can be unsubstituted or replaced by at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10aReplacement C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ), Q 601 To Q 603 Each can be related to Q. 11 The descriptions are the same.

[0316] xe21 can be 1, 2, 3, 4, or 5, and

[0317] Ar 601 L 601 and R 601 At least one of them can be independently unsubstituted or by at least one R. 10a Substituted C1-C nitrogen containing π-electron-deficient atoms 60 Cyclic groups.

[0318] For example, when xe11 in equation 601 is 2 or greater than 2, two or more Ar 601 They can be connected to each other via a single key.

[0319] In the implementation scheme, Ar in Formula 601 601 It can be a substituted or unsubstituted anthracene group.

[0320] In the implementation scheme, the electron transport region may comprise a compound represented by formula 601-1:

[0321] [Formula 601-1]

[0322]

[0323] In Equation 601-1,

[0324] X 614 It can be N or C(R) 614 ), X 615 It can be N or C(R) 615 ), X 616 It can be N or C(R) 616 ), and X 614 To X 616 At least one of them can be N,

[0325] L 611 To L 613 Each can be related to L 601 The descriptions are the same.

[0326] xe611 to xe613 can each be identical to the description concerning xe1.

[0327] R 611 To R 613 Each can be related to R. 601 The same description, and

[0328] R 614 To R 616 Each of these can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 20 Alkyl groups, C1-C 20 alkoxy group, unsubstituted or with at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups.

[0329] For example, xe1 and xe611 to xe613 in Equations 601 and 601-1 can each be 0, 1 or 2 independently.

[0330] The electron transport region may contain one or any combination of compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, and NTAZ.

[0331]

[0332]

[0333]

[0334]

[0335] The thickness of the electron transport region can be approximately to approximately For example, the thickness of the electron transport region can be approximately to approximately When the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer or the electron transport layer can be approximately to approximately For example, the thickness of the hole-blocking layer can be approximately to approximately For example, the thickness of the electron transport layer can be approximately to approximately For example, the thickness of the electron transport layer can be approximately to approximately When the thickness of the hole blocking layer and / or electron transport layer is within these ranges, satisfactory electron transport characteristics can be obtained without a significant increase in driving voltage.

[0336] In addition to the materials described above, the electron transport region (e.g., the electron transport layer in the electron transport region) may further contain a metallic material.

[0337] Materials containing metals may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ion in an alkali metal complex may be Li, Na, K, Rb, or Cs ions, and the metal ion in an alkaline earth metal complex may be Be, Mg, Ca, Sr, or Ba ions. The ligand coordinating with the metal ion in the alkali metal or alkaline earth metal complex may be hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.

[0338] For example, metal-containing materials may include Li complexes. Li complexes may include, for example, compounds ET-D1 (LiQ) or ET-D2:

[0339]

[0340] The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer may be in direct contact with the second electrode 150.

[0341] The electron injection layer can have: i) a monolayer structure consisting of a single layer composed of a single material, ii) a monolayer structure consisting of a single layer composed of different materials, or iii) a multilayer structure including layers containing different materials.

[0342] The electron injection layer may contain alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof.

[0343] Alkali metals may include Li, Na, K, Rb, Cs, or any combination thereof. Alkali earth metals may include Mg, Ca, Sr, Ba, or any combination thereof. Rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0344] Compounds containing alkali metals, compounds containing alkaline earth metals, and compounds containing rare earth metals may include oxides and halides (e.g., fluorides, chlorides, bromides, or iodides), tellurides, or any combination thereof of alkali metals, alkaline earth metals, and rare earth metals.

[0345] Compounds containing alkali metals may be alkali metal oxides (e.g., Li2O, Cs2O, or K2O), alkali metal halides (e.g., LiF, NaF, CsF, KF, LiI, NaI, CsI, or KI), or any combination thereof. Compounds containing alkaline earth metals may include alkaline earth metal oxides such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying the condition 0 < x < 1) or Ba x Ca 1-x O (where x is a real number satisfying the condition 0 < x < 1). Compounds containing rare earth metals may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In an embodiment, the compounds containing rare earth metals may include lanthanide metal tellurides. Examples of lanthanide metal tellurides are LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3.

[0346] Alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may contain i) one of the ions of alkali metals, alkaline earth metals, and rare earth metals, and ii) ligands attached to the metal ions, such as hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyl oxazole, hydroxyphenyl thiazole, hydroxyphenyl oxadiazole, hydroxyphenyl thiadiazole, hydroxyphenyl pyridine, hydroxyphenyl benzimidazole, hydroxyphenyl benzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0347] The electron injection layer may be composed of: alkali metals, alkaline earth metals, rare earth metals, compounds containing alkali metals, compounds containing alkaline earth metals, compounds containing rare earth metals, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof, or may further contain an organic material (e.g., a compound represented by Formula 601).

[0348] In the implementation, the electron injection layer may consist of: i) an alkali metal-containing compound (e.g., an alkali metal halide), or ii) a) an alkali metal-containing compound (e.g., an alkali metal halide); and b) an alkali metal, alkaline earth metal, rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer or an RbI:Yb co-deposited layer.

[0349] When the electron injection layer further contains organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal-containing compounds, alkaline earth metal-containing compounds, rare earth metal-containing compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof can be uniformly or non-uniformly dispersed in the matrix containing organic materials.

[0350] The thickness of the electron injection layer can be approximately to approximately For example, the thickness of the electron injection layer can be approximately to approximately When the thickness of the electron injection layer is within these ranges, satisfactory electron injection characteristics can be obtained without a significant increase in driving voltage.

[0351] [Second electrode 150]

[0352] The second electrode 150 is located on the intermediate layer 130 having such a structure. The second electrode 150 can be a cathode serving as an electron injection electrode, and can be made of metals, alloys, conductive compounds, or any combination thereof, each having a low work function, as materials for forming the second electrode 150.

[0353] The second electrode 150 may contain at least one element selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or combinations thereof. The second electrode 150 may be a transmission electrode, a semi-transmission electrode, or a reflection electrode.

[0354] The second electrode 150 may have a single-layer structure or a multi-layer structure including two or more layers.

[0355] [Overlay]

[0356] The first cover layer may be located outside the first electrode 110, and / or the second cover layer may be located outside the second electrode 150. The light-emitting device 10 may have a structure in which the first cover layer, the first electrode 110, the intermediate layer 130, and the second electrode 150 are stacked in this prescribed order, or a structure in which the first cover layer, the first electrode 110, the intermediate layer 130, the second electrode 150, and the second cover layer are stacked in this prescribed order.

[0357] Light generated in the emitting layer of the intermediate layer 130 of the light-emitting device 10 can be emitted outward through the first electrode 110 (which is a semi-transparent electrode or a transmissive electrode) and the first cover layer, and light generated in the emitting layer of the intermediate layer 130 of the light-emitting device 10 can be emitted outward through the second electrode 150 (which is a semi-transparent electrode or a transmissive electrode) and the second cover layer.

[0358] The first and second capping layers can increase the external light emission efficiency based on the principle of constructive interference. Therefore, the light emission efficiency of the light-emitting device 10 is increased, thereby improving the light emission efficiency of the light-emitting device 10.

[0359] Each of the first and second capping layers may contain a material having a refractive index equal to or greater than 1.6 (at 589 nm).

[0360] The first and second covering layers can each be independently an organic covering layer containing organic materials, an inorganic covering layer containing inorganic materials, or a composite covering layer containing both organic and inorganic materials.

[0361] At least one of the first and second capping layers may independently comprise a carbocyclic compound, a heterocyclic compound, an amine-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthyl phthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or a combination thereof. The carbocyclic compound, heterocyclic compound, and amine-containing compound may optionally be substituted with substituents containing O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof.

[0362] In the implementation scheme, at least one of the first capping layer and the second capping layer may each independently contain a compound containing an amine group.

[0363] In the implementation scheme, at least one of the first capping layer and the second capping layer may each independently contain a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.

[0364] In the implementation scheme, at least one of the first capping layer and the second capping layer may each independently contain one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or any combination thereof:

[0365]

[0366] [Electronic Devices]

[0367] The light-emitting device can be included in various electronic devices. In this embodiment, the electronic device including the light-emitting device can be a light-emitting device, a verification device, etc.

[0368] In addition to the light-emitting device, the electronic device (e.g., the light-emitting device) may further include: i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer may be located in at least one direction of travel of the light emitted from the light-emitting device. For example, the light emitted from the light-emitting device may be blue light. The light-emitting device may be the same as described above. In embodiments, the color conversion layer may comprise quantum dots. The quantum dots may be, for example, quantum dots as described herein.

[0369] An electronic device may include a first substrate. The first substrate includes sub-pixels, color filters include color filter regions corresponding to the sub-pixels respectively, and a color conversion layer may include color conversion regions corresponding to the sub-pixels respectively.

[0370] A pixel-defining membrane can be located between sub-pixels to define each of the sub-pixels.

[0371] The color filter may further include a color filter region and a light-blocking pattern located between adjacent color filter regions in the color filter region, and the color conversion layer may further include a color conversion region and a light-blocking pattern located between adjacent color conversion regions in the color conversion region.

[0372] The color filter region (or color conversion region) includes: a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. In an embodiment, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In an embodiment, the color filter region (or color conversion region) may contain quantum dots. The first region may contain red quantum dots, the second region may contain green quantum dots, and the third region may not contain quantum dots. The quantum dots are the same as those described in the specification. Each of the first, second, and / or third regions may further contain a scatterer.

[0373] In one embodiment, the light-emitting device can emit first light, a first region can absorb the first light to emit a first first color light, a second region can absorb the first light to emit a second first color light, and a third region can absorb the first light to emit a third first color light. In this respect, the first, second, and third first color lights can have different maximum emission wavelengths from each other. The first light can be blue light, the first first color light can be red light, the second first color light can be green light, and the third first color light can be blue light.

[0374] In addition to the light-emitting device 10 described above, the electronic device may further include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein either the source electrode or the drain electrode may be electrically connected to either the first electrode or the second electrode of the light-emitting device.

[0375] Thin-film transistors may further include gate electrodes, gate insulating layers, etc.

[0376] The active layer can contain crystalline silicon, amorphous silicon, organic semiconductors, oxide semiconductors, etc.

[0377] The electronic device may further include a sealing portion for sealing the light-emitting device. The sealing portion may be located between the color filter and / or color conversion layer and the light-emitting device. The sealing portion allows light from the light-emitting device 10 to be emitted to the outside while simultaneously preventing ambient air and moisture from penetrating into the light-emitting device 10. The sealing portion may be a sealing substrate comprising a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer comprising at least one layer of organic and / or inorganic layers. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0378] In addition to color filters and / or color conversion layers, various functional layers may be further positioned on the sealing portion, depending on the application of the electronic device. Functional layers may include a touchscreen layer, a polarization layer, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer. The verification device may be, for example, a biometric verification device for verifying an individual using biometric information from a biometric body (e.g., fingertip, pupil, etc.).

[0379] In addition to the light-emitting device, the verification device may further include a biometric information collector.

[0380] Electronic devices can be used in various displays, light sources, lighting equipment, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, video game consoles, medical instruments (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasound diagnostic devices, or endoscope displays), fish finders, various measuring instruments, meters (e.g., instruments for vehicles, aircraft, and ships), projectors, etc.

[0381] [ Figure 2 and Figure 3 [Description]

[0382] Figure 2 This is a schematic cross-sectional view of a light-emitting device according to an embodiment of the present disclosure.

[0383] Figure 2 The light-emitting device includes a substrate 100, a thin-film transistor (TFT), a light-emitting device, and a package 300 that seals the light-emitting device.

[0384] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be located on the substrate 100. The buffer layer 210 prevents impurities from penetrating through the substrate 100 and may provide a flat surface on the substrate 100.

[0385] The TFT can be located on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0386] The active layer 220 may contain inorganic semiconductors (such as silicon or polysilicon), organic semiconductors or oxide semiconductors, and may include source region, drain region and channel region.

[0387] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be located on the active layer 220, and the gate electrode 240 may be located on the gate insulating film 230.

[0388] An intermediate insulating film 250 may be located on the gate electrode 240. The intermediate insulating film 250 is located between the gate electrode 240 and the source electrode 260 to insulate the gate electrode 240 from the source electrode 260, and is located between the gate electrode 240 and the drain electrode 270 to insulate the gate electrode 240 from the drain electrode 270.

[0389] The source electrode 260 and the drain electrode 270 may be located on the intermediate insulating film 250. The intermediate insulating film 250 and the gate insulating film 230 may be formed to expose the source and drain regions of the active layer 220, and the source electrode 260 and the drain electrode 270 may be positioned to contact the exposed portions of the source and drain regions of the active layer 220.

[0390] The TFT can be electrically connected to a light-emitting device to drive the light-emitting device and is covered by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting device may be provided on the passivation layer 280. The light-emitting device includes a first electrode 110, an intermediate layer 130, and a second electrode 150.

[0391] The first electrode 110 may be located on the passivation layer 280. The passivation layer 280 does not completely cover the drain electrode 270 and exposes a portion of the drain electrode 270, and the first electrode 110 may be connected to the exposed portion of the drain electrode 270.

[0392] A pixel defining layer 290 containing insulating material may be located on the first electrode 110. The pixel defining layer 290 may expose certain areas of the first electrode 110, and an intermediate layer 130 may be formed in the exposed areas of the first electrode 110. The pixel defining layer 290 may be an organic film based on polyimide or polyacrylamide. Although in Figure 2 Although not shown, at least some layers of intermediate layer 130 may extend beyond the upper part of pixel-defining layer 290 and thus may be positioned as common layers.

[0393] The second electrode 150 may be located on the intermediate layer 130, and a capping layer 170 may be additionally formed on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.

[0394] The encapsulation portion 300 may be located on the cover layer 170. The encapsulation portion 300 may be located on the light-emitting device and protect the light-emitting device from moisture or oxygen. The encapsulation portion 300 may include: an inorganic film comprising silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or a combination thereof; an organic film comprising polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate or polyacrylic acid), epoxy-based resin (e.g., aliphatic glycidyl ether (AGE)), or a combination thereof; or a combination of an inorganic film and an organic film.

[0395] Figure 3 This is a schematic cross-sectional view of a light-emitting device according to another embodiment.

[0396] Figure 3 Light-emitting devices and Figure 2 The light-emitting device is the same, but the light-blocking pattern 500 and the functional area 400 are additionally located on the package portion 300. The functional area 400 can be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. In the embodiment, it includes Figure 3The light-emitting devices in the light-emitting equipment can be light-emitting devices connected in series.

[0397] [Preparation Method]

[0398] Layers constituting hole transport regions, emission regions, and electron transport regions can be formed in a specific region using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and laser-induced thermal imaging.

[0399] When forming layers constituting hole transport regions, emitter regions, and electron transport regions via vacuum deposition, by considering the materials to be included in the layers to be formed and the structure of the layers to be formed, deposition temperatures of approximately 100°C to approximately 500°C and approximately 10 -8 To about 10 -3 The vacuum degree and about to approximately Deposition occurs at a certain deposition rate.

[0400] When spin coating is used to form layers constituting hole transport regions, emission regions, and electron transport regions, spin coating can be performed at a coating speed of about 2,000 rpm to about 5,000 rpm and a heat treatment temperature of about 80°C to 200°C, taking into account the materials to be included in the layers to be formed and the structure of the layers to be formed.

[0401] [Definition of substituents]

[0402] As used in this article, the term "C3-C" 60 A "carbocyclic group" refers to a cyclic group consisting only of carbon and hydrogen and having three to sixty carbon atoms, and is referred to herein as "C1-C". 60 A "heterocyclic group" refers to a cyclic group having one to sixty carbon atoms and further containing heteroatoms other than carbon. (C3-C) 60 Carbocyclic groups and C1-C 60 Heterocyclic groups can be monocyclic groups, each consisting of a single ring, or polycyclic groups in which two or more rings are fused together. For example, C1-C 60 The number of cyclic atoms in a heterocyclic group can range from 3 to 61.

[0403] As used in this article, the term "cyclic group" includes C3-C 60 Carbocyclic groups and C1-C 60 Heterocyclic groups.

[0404] As used in this article, “π-electron-rich C3-C” 60"Cyclic group" refers to a cyclic group having three to sixty carbon atoms and not containing *-N=*' as a cyclic moiety, and as used herein, "C1-C containing π-electron-deficient nitrogen". 60 A "cyclic group" refers to a heterocyclic group having one to sixty carbon atoms and containing *-N=*' as the cyclic part.

[0405] For example,

[0406] C3-C 60 The carbocyclic group can be i) group T1 or ii) a fused cyclic group in which two or more groups T1 are fused together (e.g., cyclopentadienyl group, adamantyl group, norbornel group, phenyl group, pentanene group, naphthyl group, chamomile ring group, indole group, acenaphthene group, phenanthrene group, phenanthrene group, anthracene group, fluoranthene group, benzo[a]phenanthrene group, pyrene group, etc.). Groups, perylene groups, pentaphenyl groups, heptadiene groups, tetraphenyl groups, styrene groups, hexaphenyl groups, pentaphenyl groups, rutin groups, argentinium groups, ovoid groups, indene groups, fluorene groups, spiro-difluorene groups, benzo[a]fluorene groups, ind[a]phenanthrene groups, or ind[a]anthracene groups),

[0407] C1-C 60The heterocyclic group can be i) group T2, ii) a fused cyclic group in which two or more groups T2 are fused together, or iii) a fused cyclic group in which at least one group T2 and at least one group T1 are fused together (e.g., pyrrole group, thiophene group, furan group, indole group, benzo[a]indole group, naphtho[a]indole group, isoindole group, benzo[a]isoindole group, naphtho[a]isoindole group, benzo[a]thiophene ... Thiophene group, benzofuran group, carbazole group, dibenzothiophene group, dibenzothiophene group, dibenzofuran group, indole-carbazole group, indole-carbazole group, benzofuran-carbazole group, benzothiophene-carbazole group, benzothiophene-carbazole group, benzoindole-carbazole group, benzocarbazole group, benzonaphthiophene group, benzonaphthiophene group, benzofuran-dibenzofuran group, benzofuran-dibenzofuran group Benzothiophene group, benzothiophene dibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiazolyldiazole group, benzopyrazole group, benzimidazole group, benzooxazole group, benziisooxazole group, benzothiazole group, benziisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group Benzoquinoline group, benzoisoquinoline group, quinoxaloline group, benzoquinoxaloline group, quinazoline group, benzoquinazoline group, phenanthrene group, cyclophosphine group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group or azadibenzofuran group),

[0408] C3-C rich in π electrons 60 The cyclic group can be i) group T1, ii) a fused cyclic group in which two or more groups T1 are fused together, iii) group T3, iv) a fused cyclic group in which two or more groups T3 are fused together, or v) a fused cyclic group in which at least one group T3 and at least one group T1 are fused together (e.g., C3-C). 60Carbocyclic groups, pyrrole groups, thiophene groups, furan groups, indole groups, benzoindole groups, naphthoindole groups, isoindole groups, benzoisoindole groups, naphthoisoindole groups, benzothiophene groups, benzofuran groups, carbazole groups, dibenzothiophene groups, dibenzofuran groups, indole-carbazole groups, indole-carbazole groups, benzofuran-carbazole groups, benzothiophene-carbazole groups, benzothiophene-carbazole groups, benzoindole-carbazole groups, benzocarbazole groups, benzonaphthofuran groups, benzonaphthophene groups, benzonaphthothiophene groups, benzofuran-dibenzofuran groups, benzofuran-dibenzothiophene groups or benzothiophene-dibenzothiophene groups),

[0409] C1-C containing nitrogen lacking π electrons 60 The cyclic group can be i) group T4, ii) a fused cyclic group in which two or more groups T4 are fused together, iii) a fused cyclic group in which at least one group T4 and at least one group T1 are fused together, iv) a fused cyclic group in which at least one group T4 and at least one group T3 are fused together, or v) a fused cyclic group in which at least one group T4, at least one group T1 and at least one group T3 are fused together (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiaazole group, benzopyrazole group, benzimazole group). Azolium group, benzoxazole group, benzoisoxazole group, benzothiazole group, benzoisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamyl group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group or azadibenzofuran group),

[0410] Group T1 can be a cyclopropane group, cyclobutane group, cyclopentane group, cyclohexane group, cycloheptane group, cyclooctane group, cyclobutene group, cyclopentene group, cyclopentadiene group, cyclohexene group, cyclohexadiene group, cycloheptene group, adamantane group, norbornene group (or bicyclo[2.2.1]heptane group), norbornene group, bicyclo[1.1.1]pentane group, bicyclo[2.1.1]hexane group, bicyclo[2.2.2]octane group, or phenyl group.

[0411] Group T2 can be a furan group, thiophene group, 1H-pyrrole group, thiorrole group, borocyclopentadienyl group, 2H-pyrrole group, 3H-pyrrole group, imidazole group, pyrazole group, triazole group, tetraazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, azathirrole group, azaboracyclopentadienyl group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, or tetraazine group.

[0412] Group T3 can be a furan group, a thiophene group, a 1H-pyrrole group, a thiophene group, or a borocyclopentadiene group, and

[0413] The group T4 can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetraazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathirrole group, an azaboranecyclopentadiene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetraazine group.

[0414] As used in this article, "cyclic group, C3-C" 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, π-electron-rich C3-C 60 Cyclic groups or C1-C atoms containing nitrogen lacking π electrons 60 "Cyclic group" refers to a group, monovalent group, or polyvalent group (e.g., divalent, trivalent, tetravalent, etc.) fused with a cyclic group according to the structure of the formula described by the corresponding term. For example, "phenyl group" can be a benzo[a] group, a phenyl group, a phenylene group, etc., which can be readily understood by one of ordinary skill in the art based on the structure of a formula including "phenyl group".

[0415] For example, unit price C3-C 60 Carbocyclic groups and monovalent C1-C 60 Heterocyclic groups may each include C3-C 10 Cycloalkyl groups, C1-C 10 Heterocyclic alkyl groups, C3-C 10 cycloalkenyl groups, C1-C 10 Heterocyclic alkenyl groups, C6-C 60 aryl group, C1-C 60 Heteroaryl groups, monovalent non-aromatic fused polycyclic groups, and monovalent non-aromatic fused heterocyclic groups, and divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups are C3-C. 10 Cycloalkyl groups, C1-C 10 heterocyclic alkyl groups, C3-C 10Cycloalkylene groups, C1-C 10 heterocyclic alkenyl groups, C6-C 60 arylene groups, C1-C 60 Hypoaryl groups, divalent non-aromatic fused polycyclic groups, and divalent non-aromatic fused heterocyclic groups.

[0416] As used in this article, the term "C1-C" 60 "Alkyl group" refers to a monovalent group of a straight-chain or branched aliphatic hydrocarbon having 1 to 60 carbon atoms, and examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, and tert-decyl groups. As used herein, the term "C1-C" is similar. 60 "alkylene group" refers to a group that has a C1-C2 bond structure. 60 Divalent groups with the same structure as alkyl groups.

[0417] As used in this article, the term "C2-C" 60 "Alkenyl group" refers to the group located at C2-C. 60 A monovalent hydrocarbon group having at least one carbon-carbon double bond at the middle or end of an alkyl group, and examples include vinyl groups, propenyl groups, and butenyl groups. As used herein, the term "C2-C" is used... 60 "Ideinyl group" refers to a group that has a C2-C... 60 Divalent groups with the same structure as alkenyl groups.

[0418] As used in this article, the term "C2-C" 60 "Alkyne group" refers to the group located at C2-C. 60 An alkyl group is a monovalent hydrocarbon group having at least one carbon-carbon triple bond at its middle or end, and examples include ethynyl and propynyl groups. As used herein, the term "C2-C" is used... 60 "Imyynyl group" refers to a group that has a C2-C... 60 A divalent group with the same structure as the alkynyl group.

[0419] As used in this article, the term "C1-C" 60 "Alkoxy group" refers to the group consisting of -OA 101 (where A) 101 It is C1-C 60Alkyl groups are monovalent groups, and examples of them include methoxy groups, ethoxy groups and isopropoxy groups.

[0420] As used in this article, the term "C3-C" 10 "Cycloalkyl group" refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples of such groups are cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornel alkyl (or bicyclic [2.2.1]heptyl), bicyclic [1.1.1]pentyl, bicyclic [2.1.1]hexyl, and bicyclic [2.2.2]octyl. As used herein, the term "C3-C" is also relevant. 10 "Cycloalkylene group" refers to a group that has a C3-C6 bond structure. 10 A divalent group with the same structure as a cycloalkyl group.

[0421] As used in this article, the term "C1-C" 10 "Heterocyclic alkyl group" refers to a monovalent cyclic group that further comprises at least one heteroatom other than a carbon atom as a cyclic atom and has 1 to 10 carbon atoms, and examples are 1,2,3,4-oxatriazole alkyl groups, tetrahydrofuranyl groups, and tetrahydrothiophenyl groups. As used herein, the term "C1-C..." 10 "Heterocyclic alkyl groups" refers to groups with C1-C2 groups. 10 Divalent groups with the same structure as heterocyclic alkyl groups.

[0422] As used in this article, the term "C3-C" 10 "Cycloalkenyl group" refers to a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring and lacking aromaticity, and non-limiting examples include cyclopentenyl, cyclohexenyl, and cycloheptenyl groups. As used herein, the term "C3-C" is also relevant. 10 "Iridyl group" refers to a group that has a C3-C6 bond structure. 10 A divalent group with the same structure as the cycloalkenyl group.

[0423] As used in this article, the term "C1-C" 10 A "heterocyclic alkenyl group" refers to a monovalent cyclic group in which, in its cyclic structure, at least one heteroatom other than a carbon atom serves as a cyclic atom, one to ten carbon atoms, and at least one double bond. (C1-C) 10 Examples of heterocyclic alkenyl groups include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, and 2,3-dihydrothiophenyl groups. As used herein, the term "C1-C..." 10 "Heterocyclic alkenyl group" refers to a group that has a C1-C2 bond structure. 10 A divalent group with the same structure as a heterocyclic alkenyl group.

[0424] As used in this article, the term "C6-C" 60 "Aryl group" refers to a monovalent group having a carbocyclic aromatic system containing 6 to 60 carbon atoms, and as used herein, "C6-C..." 60 "Aromatic group" refers to a divalent group that has a carbocyclic aromatic system containing 6 to 60 carbon atoms. (C6-C) 60 Examples of aryl groups include phenyl groups, pentanenyl groups, naphthyl groups, chamomile cycloyl groups, indoleyl groups, acenaphthenic groups, phenanthreneyl groups, anthraceneyl groups, fluoranthraceneyl groups, benzo[a]phenanthreneyl groups, and pyreneyl groups. Peryl group, peryl group, pentaphenyl group, heptalenyl group, tetraphenyl group, fusyl group, hexaphenyl group, pentaphenyl group, rutinyl group, keratyl group, and ovoidyl group. When C6-C 60 aryl groups and C6-C 60 When each of the aryl groups comprises two or more rings, the two or more rings may be fused together.

[0425] As used in this article, the term "C1-C" 60 "Heteroaryl group" refers to a monovalent group having a heterocyclic aromatic system containing at least one heteroatom other than a carbon atom as a cyclic atom and 1 to 60 carbon atoms. As used herein, the term "C1-C..." 60 A "hybrid aryl group" refers to a divalent group having a heterocyclic aromatic system containing at least one heteroatom other than a carbon atom as a cyclic atom and 1 to 60 carbon atoms. (C1-C) 60 Examples of heteroaryl groups are pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cyclophosphine, phenanthrolinel, phthalazinyl, and naphthidyl. When C1-C 60 heteroaryl groups and C1-C 60 When each of the heteroaryl groups comprises two or more rings, the two or more rings may be fused together.

[0426] As used herein, the term "monovalent nonaromatic fused polycyclic group" refers to a monovalent group (e.g., having 8 to 60 carbon atoms) having two or more rings fused together, with only carbon atoms as cyclic atoms, and lacking aromaticity throughout its molecular structure. Examples of monovalent nonaromatic fused polycyclic groups are indenyl, fluorenyl, spiro-difluorenyl, benzo[a]fluorenyl, indo[a]phenanthrene, and indo[a]anthrayl groups. As used herein, the term "divalent nonaromatic fused polycyclic group" refers to a divalent group having the same structure as a monovalent nonaromatic fused polycyclic group.

[0427] As used herein, the term "monovalent nonaromatic fused heterocyclic group" refers to a monovalent group (e.g., having 1 to 60 carbon atoms) having two or more rings fused together, at least one heteroatom other than carbon atoms as a cyclic atom, and being non-aromatic throughout its molecular structure. Examples of monovalent non-aromatic fused heterocyclic groups include pyrrolyl groups, thiophenyl groups, furanyl groups, indole groups, benzoindole groups, naphthoindole groups, isoindole groups, benzoisoindole groups, naphthoisoindole groups, benzothiolyl groups, benzothiphenyl groups, benzofuranyl groups, carbazole groups, dibenzothiolyl groups, dibenzothiphenyl groups, dibenzofuranyl groups, azacarbazoleyl groups, azafluorenyl groups, azadibenzothiolyl groups, azadibenzothiphenyl groups, azadibenzofuranyl groups, pyrazolyl groups, imidazoleyl groups, triazoleyl groups, tetraazoleyl groups, oxazolyl groups, isoxazolyl groups, thiolyl groups, isothiazolyl groups, and oxadiazoleyl groups. Thiadiazolyl group, benzopyrazolyl group, benzoimidazolyl group, benzooxazolyl group, benzothiazolyl group, benzooxadiazolyl group, benzothiadiazolyl group, imidazopyridyl group, imidazopyrimidine group, imidazotriazinyl group, imidazopyrazinyl group, imidazopyridazinyl group, indolecarbazoyl group, indolocarbazoyl group, benzofuranocarbazoyl group, benzothiophenocarbazoyl group, benzothiophenocarbazoyl group, benzoindolocarbazoyl group, benzocarbazoyl group, benzonaphthiophenyl group, benzonaphthiophenyl group, benzofuranodibenzofuranyl group, benzofuranodibenzothiophenyl group and benzothiophenodibenzothiophenyl group. As used in this article, the term "divalent nonaromatic fused heterocyclic group" refers to a divalent group having the same structure as a monovalent nonaromatic fused heterocyclic group.

[0428] As used in this article, the term "C6-C" 60 "Aryloxy group" refers to -OA 102 (where A) 102 It is C6-C 60 (aryl group), and as used herein by the term "C6-C"60 "Aryl thio group" refers to -SA 103 (where A) 103 It is C6-C 60 (aryl group).

[0429] As the group "R" used in this article 10a "Could be:

[0430] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group or nitro group;

[0431] Each of the following groups is unsubstituted or replaced: -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group, C6-C 60 aryl thioyl groups, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 C1-C substituted by (or any combination thereof) 60 Alkyl groups, C2-C 60 alkenyl groups, C2-C 60 alkynyl group or C1-C 60 alkoxy group;

[0432] Each of the following groups is unsubstituted or replaced: -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 60 Alkyl groups, C2-C 60 alkenyl groups, C2-C 60 alkynyl group, C1-C 60 alkoxy group, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group, C6-C 60 aryl thioyl groups, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q)22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 C3-C substituted by any combination thereof 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy group or C6-C 60 aryl thioyl group; or

[0433] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0434] In this specification, Q 11 To Q 13 Q 21 To Q 23 And Q 31 To Q 33 Each of these can be independently hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl group; C2-C 60 alkenyl group; C2-C 60 alkynyl group; C1-C 60 Alkoxy groups; or each unsubstituted or deuterated, -F, cyano groups, C1-C 60 Alkyl groups, C1-C 60 C3-C substituted with alkoxy groups, phenyl groups, biphenyl groups, or any combination thereof 60 Carbocyclic groups or C1-C 60 Heterocyclic groups.

[0435] As used herein, the term "heteroatom" refers to any atom other than carbon and hydrogen. Examples of heteroatoms are O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0436] As used herein, the term "Ph" refers to a phenyl group, "Me" refers to a methyl group, "Et" refers to an ethyl group, and "tert-Bu" or "Bu" refers to a tert-Bu group. t "" refers to the tert-butyl group, and as used herein, the term "OMe" refers to the methyl methacrylate group.

[0437] As used in this article, the term "biphenyl group" refers to a "phenyl group substituted with a phenyl group." In other words, a "biphenyl group" is a group with a C6-C6 bond. 60 The aryl group is a substituted phenyl group.

[0438] As used in this article, the term "terphenyl group" refers to a "phenyl group substituted with a biphenyl group." In other words, a "terphenyl group" is a phenyl group with a C6-C substituted group. 60 C6-C substituted with aryl group 60 The aryl group is a substituted phenyl group.

[0439] Unless otherwise defined, as used herein, * and *' each refer to the binding site with the adjacent atom in the corresponding formula.

[0440] The compounds and light-emitting devices according to the embodiments will be described in detail below with reference to the embodiments.

[0441] [Example]

[0442] Manufacturing of light-emitting devices

[0443] Comparative Example 1

[0444] ITO ( ) / Ag( ) / ITO( The substrate (anode) was cut to a size of 50mm × 50mm × 0.7mm, ultrasonicated with isopropanol and pure water for 5 minutes each, and cleaned by exposure to ultraviolet light and ozone for 30 minutes. The substrate was then loaded onto a vacuum deposition apparatus.

[0445] HAT-CN was vacuum deposited on the substrate to form a hole injection layer with a thickness of 5 nm. NPB, as a hole transport compound, was vacuum deposited on the hole injection layer to form a hole transport layer with a thickness of 60 nm.

[0446] TCTA was vacuum deposited on the hole transport layer to form an electron blocking layer with a thickness of 7 nm.

[0447] CBP and TITRZ as the host and PD17 as the dopant were co-deposited on the electron blocking layer in a weight ratio of 7:3:1 to form an emitter layer with a thickness of 20 nm.

[0448] TPM-TAZ and LiQ were deposited on the emitter layer in a 5:5 weight ratio to form an electron transport layer with a thickness of 30 nm.

[0449] Yb is vacuum deposited on an electron transport layer to a thickness of 1 nm, followed by AgMg vacuum deposition on it to form a cathode with a thickness of 10 nm, and CPL is deposited on the cathode to form a capping layer with a thickness of 70 nm, thereby completing the fabrication of the organic light-emitting device.

[0450] Comparative Example 2

[0451] The light-emitting device was manufactured in the same manner as in Comparative Example 1, but the emitting layer was formed to be 30 nm thick.

[0452] Example 1

[0453] The light-emitting device was manufactured in the same manner as in Comparative Example 1, but CBP and TITRZ as the host and compound PD17 as the dopant were co-deposited on the electron blocking layer in a weight ratio of 7:3:1 to form a first emission layer with a thickness of 15 nm, TCTA was vacuum deposited on the first emission layer to form a quantum well layer with a thickness of 5 nm, and CBP and TITRZ as the host and compound PD17 as the dopant were co-deposited on the quantum well layer in a weight ratio of 7:3:1 to form a second emission layer with a thickness of 15 nm.

[0454] Example 2

[0455] The light-emitting device was manufactured in the same manner as in Comparative Example 1, but CBP as the host and compound PD17 as the dopant were co-deposited on the electron blocking layer in a weight ratio of 9:1 to form a first emission layer with a thickness of 15 nm, TCTA was vacuum deposited on the first emission layer to form a quantum well layer with a thickness of 5 nm, and TITRZ as the host and compound PD17 as the dopant were co-deposited on the quantum well layer in a weight ratio of 9:1 to form a second emission layer with a thickness of 15 nm.

[0456] Example 3

[0457] The light-emitting device was manufactured in the same manner as in Comparative Example 1, but CBP and TITRZ as the host and compound PD17 as the dopant were co-deposited on the electron blocking layer in a weight ratio of 3:7:1 to form a first emission layer with a thickness of 10 nm. TCTA was vacuum-deposited on the first emission layer to form a first quantum well layer with a thickness of 3 nm. CBP and TITRZ as the host and compound PD17 as the dopant were co-deposited on the first quantum well layer in a weight ratio of 7:3:1 to form a second emission layer with a thickness of 10 nm. TCTA was vacuum-deposited on the second emission layer to form a second quantum well layer with a thickness of 3 nm. CBP and TITRZ as the host and compound PD17 as the dopant were co-deposited on the second quantum well layer in a weight ratio of 7:3:1 to form a third emission layer with a thickness of 10 nm.

[0458] Example 4

[0459] The light-emitting device was manufactured in the same manner as in Comparative Example 1, but CBP as the host and compound PD17 as the dopant were co-deposited on the electron blocking layer in a weight ratio of 9:1 to form a first emission layer with a thickness of 10 nm. TCTA was vacuum-deposited on the first emission layer to form a first quantum well layer with a thickness of 3 nm. CBP and TITRZ as the host and compound PD17 as the dopant were co-deposited on the first quantum well layer in a weight ratio of 7:3:1 to form a second emission layer with a thickness of 10 nm. TCTA was vacuum-deposited on the second emission layer to form a second quantum well layer with a thickness of 3 nm. TITRZ as the host and compound PD17 as the dopant were co-deposited on the second quantum well layer in a weight ratio of 9:1 to form a third emission layer with a thickness of 10 nm.

[0460] Example 5

[0461] The light-emitting device was manufactured in the same manner as in Comparative Example 1, but CBP as the host and compound PD17 as the dopant were co-deposited on the electron blocking layer in a weight ratio of 9:1 to form a first emission layer with a thickness of 10 nm. TCTA was vacuum-deposited on the first emission layer to form a first quantum well layer with a thickness of 3 nm. CBP as the host and compound PD17 as the dopant were co-deposited on the first quantum well layer in a weight ratio of 9:1 to form a second emission layer with a thickness of 10 nm. TCTA was vacuum-deposited on the second emission layer to form a second quantum well layer with a thickness of 3 nm. TITRZ as the host and compound PD17 as the dopant were co-deposited on the second quantum well layer in a weight ratio of 9:1 to form a third emission layer with a thickness of 10 nm.

[0462] Example 6

[0463] The light-emitting device was manufactured in the same manner as in Comparative Example 1, but CBP as the host and compound PD17 as the dopant were co-deposited on the electron blocking layer in a weight ratio of 9:1 to form a first emission layer with a thickness of 10 nm. TCTA was vacuum-deposited on the first emission layer to form a first quantum well layer with a thickness of 3 nm. TITRZ as the host and compound PD17 as the dopant were co-deposited on the first quantum well layer in a weight ratio of 9:1 to form a second emission layer with a thickness of 10 nm. TCTA was vacuum-deposited on the second emission layer to form a second quantum well layer with a thickness of 3 nm. TITRZ as the host and compound PD17 as the dopant were co-deposited on the second quantum well layer in a weight ratio of 9:1 to form a third emission layer with a thickness of 10 nm.

[0464] To evaluate the characteristics of the light-emitting devices manufactured according to Comparative Examples 1 and 2, as well as Examples 1 to 6, their current density, efficiency, and lifespan were measured, and the results are shown in Table 1.

[0465] The driving voltage and current density of the light-emitting device were measured using a source meter (Keithley Instrument, 2400 series), and the efficiency was measured using a measuring meter (C9920-2-12 from Hamamatsu Photonics Inc.).

[0466] [Table 1]

[0467]

[0468]

[0469]

[0470] Comparative Example 3

[0471] The light-emitting device was manufactured in the same manner as in Comparative Example 1, but the compound PtNON was used as a dopant instead of compound PD17.

[0472] Comparative Example 4

[0473] The light-emitting device was manufactured in the same manner as in Comparative Example 2, but the compound PtNON was used as a dopant instead of compound PD17.

[0474] Example 7

[0475] The light-emitting device was manufactured in the same manner as in Example 1, but the compound PtNON was used as a dopant instead of compound PD17.

[0476] Example 8

[0477] The light-emitting device was manufactured in the same manner as in Example 2, but the compound PtNON was used as a dopant instead of compound PD17.

[0478] Example 9

[0479] The light-emitting device was manufactured in the same manner as in Example 3, but the compound PtNON was used as a dopant instead of compound PD17.

[0480] Example 10

[0481] The light-emitting device was manufactured in the same manner as in Example 4, but the compound PtNON was used as a dopant instead of compound PD17.

[0482] Example 11

[0483] The light-emitting device was manufactured in the same manner as in Example 5, but the compound PtNON was used as a dopant instead of compound PD17.

[0484] Example 12

[0485] The light-emitting device was manufactured in the same manner as in Example 6, but the compound PtNON was used as a dopant instead of compound PD17.

[0486] To evaluate the characteristics of the light-emitting devices manufactured according to Comparative Examples 3 and 4, as well as Examples 7 to 12, their current density, efficiency, and lifespan were measured, and the results are shown in Table 2.

[0487] The driving voltage and current density of the light-emitting device were measured using a source meter (Keithley Instruments, 2400 series), and the efficiency was measured using a measuring meter (Hamamatsu Photonics C9920-2-12).

[0488]

[0489] [Table 2]

[0490]

[0491] Referring to Tables 1 and 2, it is confirmed that the light-emitting devices of Examples 1 to 6 exhibit superior efficiency and lifespan compared to the light-emitting devices of Comparative Examples 1 and 2, and that the light-emitting devices of Examples 7 to 12 exhibit superior efficiency and lifespan compared to the light-emitting devices of Comparative Examples 3 and 4.

[0492] Comparison of HOMO energy values

[0493] The HOMO energies of CBP (hole transport host), TITRZ (electron transport host), and TCTA (hole transport compound) are shown in Table 3.

[0494] [Table 3]

[0495] HOMO energy (eV) CBP -6.00 TITRZ -5.96 TCTA -6.10

[0496] As shown in Table 3, it is confirmed that the absolute value of the HOMO energy of TCTA, which is a hole transport compound contained in the quantum well layer, is greater than the absolute value of the HOMO energy of CBP, which is a hole transport host contained in the emitter layer.

[0497] In each of the light-emitting devices of Comparative Examples 1 to 4, the emitting layer does not include a quantum well layer, resulting in an imbalance between hole and electron transport. Therefore, recombination of holes and electrons occurs at the interface between the emitting layer and the contact emitting layer, thereby reducing device performance due to the degradation of the contact emitting layer.

[0498] On the other hand, in each of the light-emitting devices of Examples 1 to 12, the emitting layer includes a quantum well layer, and the absolute value of the HOMO energy of the hole transport compound contained in the quantum well layer is greater than the absolute value of the HOMO energy of the hole transport host contained in the emitting layer, thereby balancing hole transport and electron transport. Therefore, a recombination region of holes and electrons is formed inside the emitting layer, thereby preventing degradation of layers other than the emitting layer and simultaneously improving efficiency and lifespan.

[0499] According to the implementation plan, the light-emitting device exhibits improved efficiency and a longer lifespan compared to existing technology devices.

[0500] It should be understood that the embodiments described herein are for descriptive purposes only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made herein without departing from the spirit and scope defined by the claims.

Claims

1. A light-emitting device, comprising: First electrode; The second electrode facing the first electrode; as well as An intermediate layer of a stack comprising an emitter layer is disposed between the first electrode and the second electrode, wherein The stack of the emitter layer includes: First launch layer, second launch layer, and third launch layer; A quantum well layer, comprising a first quantum well layer and a second quantum well layer, wherein the first quantum well layer is disposed between the first emitter layer and the second emitter layer, and the second quantum well layer is disposed between the second emitter layer and the third emitter layer; and Hole transport entities and electron transport entities, The quantum well layer contains a hole transport compound. The first electrode is the anode. The second electrode is the cathode. In the stack of the emitter layers, the first emitter layer is closest to the anode and contains the hole transport element but not the electron transport element. In the stack of emission layers, the third emission layer is closest to the cathode and contains the electron transport element but not the hole transport element. The second emission layer includes the electron transport element and the hole transport element. The stack of the emission layers contains the same phosphorescent dopant, and The absolute value of the HOMO energy of the hole transport compound is greater than the absolute value of the HOMO energy of the hole transport host.

2. The light-emitting device of claim 1, wherein the stack of the emitting layers emits blue light.

3. The light-emitting device as claimed in claim 1, wherein... The intermediate layer includes an electron blocking layer. The electron blocking layer contains a hole transport compound, and The hole transport compound in the electron blocking layer and the hole transport compound in the quantum well layer are the same.

4. The light-emitting device of claim 3, wherein the thickness of the electron blocking layer is greater than the thickness of the quantum well layer.

5. The light-emitting device of claim 1, wherein the hole transport subject comprises one of the following compounds: CBP.

6. The light-emitting device of claim 1, wherein the electron transport body comprises one of the following compounds: 。

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