Electronic device

Abstract

An electronic device is provided, including a sensor layer having an active area and a peripheral area, a driving chip electrically connected to the sensor layer, and a plurality of switches connected between the sensor layer and the driving chip, wherein the sensor layer includes a plurality of sensing cells in the active area and a plurality of lines in the peripheral area and electrically connected to the plurality of sensing cells respectively, each of the plurality of sensing cells includes a plurality of sub-sensing cells, the plurality of sub-sensing cells includes a first sub-sensing cell and a second sub-sensing cell, the plurality of lines includes a first line electrically connected to the first sub-sensing cell and a second line electrically connected to the second sub-sensing cell, and the plurality of switches includes a first switch connected between the first line and the second line and a second switch connected between the first line and the driving chip.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0103394, filed on August 18, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0002] Some aspects of embodiments of this disclosure relate to an electronic device having improved sensing reliability. Background Technology

[0003] Electronic devices can sense external input applied from outside the device. This external input can be user input, which can include various types such as a part of the user's body, light, heat, a pen, pressure, etc. The electronic device can use electromagnetic resonance (EMR) methods to identify the pen's coordinates, or it can use active electrostatics (AES) methods to identify the pen's coordinates.

[0004] The information disclosed in this background section is only intended to enhance the understanding of the background art, and therefore the information discussed in this background section does not necessarily constitute prior art. Summary of the Invention

[0005] Aspects of some embodiments of this disclosure include electronic devices having relatively improved sensing reliability.

[0006] According to some embodiments of the inventive concept, an electronic device includes: a display layer; a sensor layer on the display layer, defining an effective area and a peripheral area adjacent to the effective area; a driver chip electrically connected to the sensor layer; and a plurality of switches connected between the sensor layer and the driver chip, wherein the sensor layer includes a plurality of sensing units in the effective area and a plurality of lines in the peripheral area and electrically connected to the plurality of sensing units respectively, each of the plurality of sensing units includes a plurality of sub-sensing units arranged in a first direction and a second direction intersecting the first direction, the plurality of sub-sensing units including a first sub-sensing unit and a second sub-sensing unit adjacent to the first sub-sensing unit in the second direction, the plurality of lines including a first line electrically connected to the first sub-sensing unit and a second line electrically connected to the second sub-sensing unit, and the plurality of switches including a first switch connected between the first line and the second line and a second switch connected between the first line and the driver chip.

[0007] According to some embodiments, the sensor layer can operate in a first mode or a second mode different from the first mode. In the first mode, the first switch can operate in an on state and the second switch can operate in an off state. In the second mode, the first switch can operate in an off state and the second switch can operate in an on state.

[0008] According to some embodiments, the driver chip may include a plurality of first driver units operating in a first mode and a plurality of second driver units operating in a second mode.

[0009] According to some embodiments, in a first mode, the first line and the second line can be connected to each other, and in a second mode, multiple lines can be electrically connected to multiple second drive units respectively.

[0010] According to some embodiments, in a first mode, the sensor layer can sense the input based on each of a plurality of sensing units, and in a second mode, the sensor layer can sense the input based on each of a plurality of sub-sensing units.

[0011] According to some embodiments, each of the plurality of sub-sensing units may include an electrode and a cross electrode that is insulated from the electrode. The sensor layer can sense input via touch in a first mode by means of changes in mutual capacitance generated between the electrode and the cross electrode, and the sensor layer can sense input via an input device in a second mode by means of changes in capacitance of each of the electrode and the cross electrode.

[0012] According to some embodiments, the cross electrode may include: a first cross portion extending in a second direction; and a plurality of second cross portions protruding from the first cross portion, wherein the electrode may include: a plurality of electrode patterns spaced apart from each other, with the first cross portion between the plurality of electrode patterns; and a bridging pattern that crosses the first cross portion insulated from and is electrically connected to the plurality of electrode patterns.

[0013] According to some embodiments, the first cross portion, the plurality of second cross portions, and the plurality of electrode patterns may have a grid structure.

[0014] According to some embodiments, the plurality of sub-sensing units may further include a third sub-sensing unit adjacent to the first sub-sensing unit in a first direction, the plurality of lines may further include a third line electrically connected to the first sub-sensing unit and a fourth line electrically connected to the third sub-sensing unit, and the plurality of switches may further include a third switch connected between the third line and the fourth line and a fourth switch connected between the fourth line and the driver chip.

[0015] According to some embodiments, in a first mode, the third switch can operate in the ON state and the fourth switch can operate in the OFF state, and in a second mode, the third switch can operate in the OFF state and the fourth switch can operate in the ON state. Attached Figure Description

[0016] The accompanying drawings are included to provide a further understanding of embodiments according to the inventive concept, and are incorporated in and constitute a part of this specification. The drawings illustrate aspects of some exemplary embodiments of the inventive concept and, together with the description, serve to explain the principles of embodiments according to the inventive concept. In the drawings:

[0017] Figure 1 These are perspective views of electronic devices based on some embodiments of the inventive concept;

[0018] Figure 2 These are exploded perspective views of electronic devices based on some embodiments of the inventive concept;

[0019] Figure 3A These are cross-sectional views of electronic devices according to some embodiments of the inventive concept;

[0020] Figure 3B These are cross-sectional views of electronic devices according to some embodiments of the inventive concept;

[0021] Figure 4 This is a schematic block diagram illustrating an electronic device and an input device according to some embodiments of the inventive concept;

[0022] Figure 5 These are cross-sectional views of electronic devices according to some embodiments of the inventive concept;

[0023] Figure 6 This is a plan view of the sensor layer according to some embodiments of the inventive concept;

[0024] Figure 7A This is a plan view illustrating one of a plurality of sensing units according to some embodiments of the inventive concept;

[0025] Figure 7B This is a plan view illustrating one of a plurality of sub-sensing units according to some embodiments of the inventive concept;

[0026] Figure 7C It is based on some embodiments of the inventive concept along Figure 7A A sectional view taken by line I-I';

[0027] Figure 8 These are plan views of electronic devices based on some embodiments of the inventive concept;

[0028] Figure 9 This is a diagram illustrating the operation of a plurality of switches and a plurality of drive switches according to some embodiments of the inventive concept;

[0029] Figure 10 A diagram of an electronic device operating in a first mode according to some embodiments of the inventive concept;

[0030] Figure 11 These are diagrams of an electronic device operating in a second mode according to some embodiments of the inventive concept; and

[0031] Figure 12 This is a plan view illustrating a portion of an electronic device according to some embodiments of the inventive concept. Detailed Implementation

[0032] In this specification, it will also be understood that when a component (or region, layer, part) is referred to as being "on" another component, "connected to" or "integrated into" another component, the component may be directly located on / arranged / connected / integrated into said one component, or there may be an intermediate third component.

[0033] The same reference numerals always refer to the same components. Furthermore, the thickness, proportions, and dimensions of components are exaggerated in the figures for clarity.

[0034] The term “and / or” includes any and all combinations of one or more of the relevant listed items.

[0035] It will be understood that although terms such as “first” and “second” are used herein to describe various elements, these elements should not be limited by these terms. The terms are used only to distinguish one component from others. For example, a first element referred to as a first element in one embodiment may be referred to as a second element in another embodiment without departing from the scope of the appended claims. Unless otherwise stated, singular terms may include plural forms.

[0036] Furthermore, terms such as "below," "under," "above," and "above" are used to explain the relationships between the components shown in the accompanying drawings. These terms may be relative concepts and are described based on the directions expressed in the drawings.

[0037] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Furthermore, terms (such as those defined in common dictionaries) shall be interpreted as having the meaning consistent with their meaning in the context of the relevant field, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0038] "Including" or "comprises" means describing a property, a fixed quantity, a step, an operation, an element, a component, or a combination thereof, but does not exclude other properties, fixed quantities, steps, operations, elements, components, or combinations thereof.

[0039] In the following description, some exemplary embodiments of the inventive concept will be described in more detail with reference to the accompanying drawings.

[0040] Figure 1 These are perspective views of electronic devices based on some embodiments of the inventive concept.

[0041] Reference Figure 1 The electronic device 1000 can be a device activated by an electrical signal. For example, the electronic device 1000 can be a mobile phone, a tablet PC, a car navigation system, a game console, or a wearable device, but is not limited to these. Figure 1 An example in which the electronic device 1000 is configured as a mobile phone is shown, but the embodiments according to this disclosure are not limited thereto.

[0042] An effective region 1000A and a peripheral region 1000NA may be defined on an electronic device 1000. The electronic device 1000 may display an image through the effective region 1000A. The effective region 1000A may include a surface defined by a first direction DR1 and a second direction DR2. The thickness direction of the electronic device 1000 may be parallel to a third direction DR3 intersecting the first direction DR1 and the second direction DR2. Therefore, the front surface (or top surface) and the rear surface (or bottom surface) of each of the components constituting the electronic device 1000 may be defined based on the third direction DR3.

[0043] The peripheral region 1000NA can be positioned adjacent to the effective region 1000A and can be, for example, a border region. The peripheral region 1000NA can surround the effective region 1000A. However, this is merely an example, and the peripheral region 1000NA may be omitted in some embodiments according to the inventive concept.

[0044] The electronic device 1000 can sense input applied from outside itself. External input can be user input. User input can include various types of external input, such as a part of the user's body (e.g., a finger or touch input), light, heat, or pressure.

[0045] Figure 1 The electronic device 1000 shown can sense input via touch from a user and input via input device 2000. Input device 2000 can refer to a device other than the user's body. For example, input device 2000 can be an active pen, stylus pen, stylus pen, or electronic pen. In the following description, the case where the input device 2000 is an active pen will be used as an example.

[0046] Electronic device 1000 and input device 2000 can perform bidirectional communication. Electronic device 1000 can provide uplink signals to input device 2000. For example, the uplink signal may include a synchronization signal or information of electronic device 1000, but embodiments are not particularly limited thereto. Input device 2000 can provide downlink signals to electronic device 1000. The downlink signal may include a synchronization signal or status information of input device 2000. For example, the downlink signal includes coordinate information of input device 2000, battery information of input device 2000, tilt information of input device 2000, and / or various information stored in input device 2000, but embodiments are not particularly limited thereto.

[0047] Figure 2 This is an exploded perspective view of an electronic device based on some embodiments of the inventive concept.

[0048] Reference Figure 2 The electronic device 1000 may include a window 600, an anti-reflective layer 700, an electronic module 500, and a housing 800. According to some embodiments, the window 600 and the housing 800 may be combined with each other to define the appearance of the electronic device 1000.

[0049] Window 600 may include an optically transparent insulating material. For example, window 600 may include glass or plastic. Window 600 may have a single-layer or multi-layer structure. For example, window 600 may include multiple plastic films bonded together using an adhesive, or it may include a glass substrate and plastic films bonded together using an adhesive.

[0050] The transmissive region 600T of window 600 may define the entire surface of electronic device 1000. The transmissive region 600T may be an optically transparent region. For example, the transmissive region 600T may be a region with a visible light transmittance of about 90% or greater.

[0051] An anti-reflective layer 700 may be located below the window 600. The anti-reflective layer 700 can reduce the reflectivity of external light incident from the upper side of the window 600. According to some embodiments of the inventive concept, the anti-reflective layer 700 may be omitted or may be included in the electronic module 500.

[0052] The electronic module 500 can display images and sense external inputs. An active area 500A and a peripheral area 500N can be defined on the electronic module 500. The active area 500A can be an area activated based on an electrical signal.

[0053] The effective area 500A can be an area where an image is displayed and external input is simultaneously sensed. The transmissive area 600T can be superimposed on the effective area 500A. Therefore, a user can visually recognize an image or provide external input through the transmissive area 600T. The effective area 500A can be superimposed on the effective area 1000A of the electronic device 1000.

[0054] Peripheral region 500N can be peripheral region 1000NA of electronic device 1000 (see...) Figure 1 The area covered. The peripheral area 500N may be adjacent to the active area 500A. The peripheral area 500N may surround the active area 500A. The drive circuitry or drive lines used to drive the active area 500A may be located within the peripheral area 500N.

[0055] The electronic module 500 may include a display layer 100, a sensor layer 200, a driver chip 300, and a circuit board 400.

[0056] Display layer 100 can be a component that substantially generates an image. Display layer 100 can be an emitting display layer. For example, display layer 100 can be an organic light-emitting display layer, a quantum dot display layer, a micro-LED display layer, or a nano-LED display layer.

[0057] The sensor layer 200 may be located on the display layer 100. The sensor layer 200 can sense external input applied from the outside.

[0058] The driver chip 300 can be electrically connected to the display layer 100 and the sensor layer 200. Figure 2 An example in which the driver chip 300 is mounted on the circuit board 400 is shown, but the arrangement of the driver chip 300 according to some embodiments of the inventive concept is not limited thereto. For example, the driver chip 300 may be mounted on the display layer 100, but is not particularly limited thereto.

[0059] The circuit board 400 may include various drive circuits for driving the electronic device 1000 and connectors for supplying power. The circuit board 400 may be electrically connected to the display layer 100 and the sensor layer 200. According to some embodiments of the inventive concept, the circuit board 400 may be a flexible circuit film or a rigid substrate. The circuit board 400 may be bent to face the rear surface of the display layer 100.

[0060] The circuit board 400 can be connected to multiple display pads (PDDs) of the display layer 100. The circuit board 400 can provide electrical signals for driving the display layer 100 to the display layer 100. These electrical signals can be generated from the circuit board 400.

[0061] The circuit board 400 can be connected to multiple sensing pads (PDTs) of the display layer 100. The multiple sensing pads (PDTs) may include multiple first sensing pads (TD1) and multiple second sensing pads (TD2). The circuit board 400 can provide electrical signals for driving the sensor layer 200 to the sensor layer 200. These electrical signals can be generated from the circuit board 400.

[0062] The housing 800 can be integrated with the window 600. The housing 800 can be integrated with the window 600 to provide interior space (e.g., a defined or predetermined interior space). The electronic module 500 can be housed within the interior space.

[0063] The housing 800 may include a material with relatively high rigidity. For example, the housing 800 may include glass, plastic, or metal, or may include multiple frames and / or plates made of a combination of glass, plastic, and metal. The housing 800 can stably protect the components of the electronic device 1000 housed in the internal space from external impacts.

[0064] Figure 3A This is a cross-sectional view of an electronic device based on some embodiments of the inventive concept.

[0065] Reference Figure 3A The electronic device 1000 may include a display layer 100 and a sensor layer 200. The display layer 100 may include a substrate layer 110, a circuit layer 120, a light-emitting element layer 130, and an encapsulation layer 140.

[0066] The substrate layer 110 may be a component providing a substrate surface, and the circuit layer 120 is located on the substrate surface. The substrate layer 110 may be a glass substrate, a metal substrate, or a polymer substrate. However, embodiments of the inventive concept are not limited thereto. For example, the substrate layer 110 may be an inorganic layer, an organic layer, or a composite layer.

[0067] The substrate layer 110 may have a multilayer structure. For example, the substrate layer 110 includes a first synthetic resin layer and silicon dioxide (SiO2) located on the first synthetic resin layer. x The system consists of a silicon oxide layer, an amorphous silicon (a-Si) layer on top of the silicon oxide layer, and a second synthetic resin layer on top of the amorphous silicon layer. The silicon oxide layer and the amorphous silicon layer can be referred to as substrate barrier layers.

[0068] Each of the first and second synthetic resin layers may include a polyimide resin. Furthermore, each of the first and second synthetic resin layers may include at least one selected from acrylate resins, methacrylate resins, polyisoprene resins, vinyl resins, epoxy resins, polyurethane resins, cellulose resins, siloxane resins, polyamide resins, and perylene resins. In this specification, "~~" type resin refers to resins containing the functional group "~~".

[0069] Circuit layer 120 may be located on substrate layer 110. Circuit layer 120 may include insulating layers, semiconductor patterns, conductive patterns, and signal lines. The insulating layer, semiconductor layer, and conductive layer may be formed on substrate layer 110 by means such as coating or vapor deposition, and then the insulating layer, semiconductor layer, and conductive layer may be selectively patterned by multiple photolithography processes. Thereafter, semiconductor patterns, conductive patterns, and signal lines included in circuit layer 120 may be provided.

[0070] The light-emitting element layer 130 may be located on the circuit layer 120. The light-emitting element layer 130 may include light-emitting elements. For example, the light-emitting element layer 130 may include organic light-emitting materials, quantum dots, quantum rods, micro LEDs, or nano LEDs.

[0071] The encapsulation layer 140 may be located on the light-emitting element layer 130. The encapsulation layer 140 can protect the light-emitting element layer 130 from foreign matter such as moisture, oxygen and dust particles.

[0072] The sensor layer 200 can be located on the display layer 100 via a continuous process. In this case, the sensor layer 200 can be represented as being directly disposed on the display layer 100. Direct disposal can mean that a third component is not located between the sensor layer 200 and the display layer 100. That is, a separate adhesive member is not located between the sensor layer 200 and the display layer 100. Alternatively, the sensor layer 200 can be bonded to the display layer 100 by an adhesive member. The adhesive member can include a general adhesive or a pressure-sensitive adhesive.

[0073] Figure 3B This is a cross-sectional view of an electronic device based on some embodiments of the inventive concept.

[0074] Reference Figure 3B The electronic device 1000-1 may include a display layer 100-1 and a sensor layer 200-1. The display layer 100-1 may include a substrate 110-1, a circuit layer 120-1, a light-emitting element layer 130-1, a packaging substrate 140-1, and a bonding member 150-1.

[0075] Each of the substrate 110-1 and the encapsulation substrate 140-1 may be a glass substrate, a metal substrate or a polymer substrate, but is not particularly limited thereto.

[0076] The bonding member 150-1 may be located between the substrate 110-1 and the encapsulation substrate 140-1. The bonding member 150-1 can bond the encapsulation substrate 140-1 to the substrate 110-1 or the circuit layer 120-1. The bonding member 150-1 may comprise inorganic or organic materials. For example, inorganic materials may include glass frit seals, and organic materials may include photocurable resins or photoplastic resins. However, the materials forming the bonding member 150-1 are not limited to the examples above.

[0077] The sensor layer 200-1 can be directly disposed on the encapsulation substrate 140-1. Direct disposal may mean that the third component is not located between the sensor layer 200-1 and the display layer 100-1. That is, a separate adhesive component is not located between the sensor layer 200-1 and the display layer 100-1. However, embodiments of the inventive concept are not limited to this. For example, the adhesive layer may further be located between the sensor layer 200-1 and the encapsulation substrate 140-1.

[0078] Figure 4 This is a schematic block diagram illustrating some embodiments of an electronic device and an input device according to the inventive concept. Figure 2 The same components described herein will be indicated by the same reference numerals, and their descriptions will be omitted.

[0079] Reference Figure 4 The sensor layer 200 can sense both inputs from the user's body 3000 and inputs from the input device 2000.

[0080] The user's input area of ​​3000 can have a first width WE1.

[0081] The sensor layer 200 can be operated via time-division multiplexing. For example, the sensor layer 200 can be driven alternately in a first mode and a second mode. The first mode can be a mode for sensing input through the user's body 3000, and the second mode can be a mode for sensing input through the input device 2000. The first mode and the second mode will be described later.

[0082] When the second mode begins, sensor layer 200 can provide an uplink signal ULS to input device 2000. When input device 2000 receives the uplink signal ULS and synchronizes with electronic device 1000, input device 2000 can provide a downlink signal DLS to sensor layer 200.

[0083] Input device 2000 may include a power supply 2100, a memory 2200, a controller 2300, a transmitter 2400, a receiver 2500, and a pen electrode 2600. However, the components constituting input device 2000 are not limited to those listed above. For example, input device 2000 may also include an electrode switch for switching the pen electrode 2600 to a signal transmission mode or a signal reception mode, a pressure sensor for sensing pressure, a rotation sensor for sensing rotation, etc.

[0084] The input area of ​​the pen electrode 2600 may have a second width WE2. The second width WE2 of the input area of ​​the pen electrode 2600 may be smaller than the first width WE1 of the input area of ​​the user's body 3000.

[0085] Power supply 2100 may include a battery or high-capacity capacitor for supplying power to input device 2000. Memory 2200 may store functional information of input device 2000. Controller 2300 may control the operation of input device 2000. Each of transmitter 2400 and receiver 2500 may communicate with electronic device 1000 via pen electrode 2600. Transmitter 2400 may be referred to as a signal generator or transmitting circuit, and receiver 2500 may be referred to as a signal receiver or receiving circuit.

[0086] Figure 5 These are cross-sectional views of an electronic device according to some embodiments of the inventive concept; in Figure 5 In the description, the same reference numerals are used Figure 3A The components described in the document are omitted.

[0087] Reference Figure 5 At least one inorganic layer may be located on the top surface of the substrate layer 110. The inorganic layer may include at least one of alumina, titanium oxide, silicon oxide, silicon oxynitride, zirconium oxide, and hafnium oxide. The inorganic layer may be configured as multiple layers. The multiple inorganic layers may constitute a barrier layer and / or a buffer layer. According to some embodiments, the display layer 100 is shown as including a buffer layer BFL.

[0088] The buffer layer BFL can improve the adhesion between the substrate layer 110 and the semiconductor pattern. The buffer layer BFL may include a silicon oxide layer and a silicon nitride layer, and the silicon oxide layer and silicon nitride layer may be stacked alternately.

[0089] The semiconductor pattern may be located on the buffer layer BFL. The semiconductor pattern may include polycrystalline silicon. However, embodiments of the inventive concept are not limited thereto. For example, the semiconductor pattern may include amorphous silicon, low-temperature polycrystalline silicon, or oxide semiconductor.

[0090] Figure 5Only a portion of the semiconductor pattern is shown. For example, the semiconductor pattern could also be located in other regions. The semiconductor pattern can be arranged across pixels according to specific rules. Depending on whether the semiconductor pattern is doped, it has different electrical properties. The semiconductor pattern can include a first region with high conductivity and a second region with low conductivity. The first region can be doped with N-type or P-type dopant. A P-type transistor can include a doped region doped with P-type dopant, and an N-type transistor can include a doped region doped with N-type dopant. The second region can be undoped, or it can be doped at a lower concentration than the first region.

[0091] The first region can have a higher conductivity than the second region and can be substantially used as an electrode or signal line. The second region can substantially correspond to the active region (or channel) of a transistor. That is, a portion of the semiconductor pattern can be the active region of a transistor, another portion can be the source or drain of a transistor, and yet another portion can be a connecting electrode or a connecting signal line.

[0092] Each pixel can have an equivalent circuit comprising seven transistors, a capacitor, and a light-emitting element, and the equivalent circuit diagram of a pixel can be modified in various ways. Figure 5 The image shows a transistor 100PC and a light-emitting element 100PE set in a pixel as an example.

[0093] Transistor 100PC may include a source SC1, an active region A1, a drain D1, and a gate G1. The source SC1, active region A1, and drain D1 may be formed from a semiconductor pattern. The source SC1 and drain D1 may extend in opposite directions from the active region A1 in a cross-section. Figure 5 A portion of the connection signal line SCL, formed by a semiconductor pattern, is shown. Although not specifically shown, the connection signal line SCL can be connected in plane to the drain D1 of transistor 100PC.

[0094] The first insulating layer 10 may be located on the buffer layer BFL. The first insulating layer 10 is stacked in common with a plurality of pixels PX to cover the semiconductor pattern. The first insulating layer 10 may include an inorganic layer and / or an organic layer and has a single-layer or multi-layer structure. The first insulating layer 10 may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide. According to some embodiments, the first insulating layer 10 may include a single-layer silicon oxide layer. The insulating layer of the circuit layer 120, as described later, and the first insulating layer 10 may be inorganic layers and / or organic layers and may have a single-layer or multi-layer structure. The inorganic layer may include at least one of the materials described above, but is not limited thereto.

[0095] Gates G1 are located on the first insulating layer 10. Each of the gates G1 may be part of a metal pattern. Gates G1 are stacked with the active region A1. In a process in which the semiconductor pattern is doped, gates G1 may be used as a mask.

[0096] The second insulating layer 20 may be located on the first insulating layer 10 to cover the gate G1. The second insulating layer 20 may be stacked in common with the pixel. The second insulating layer 20 may be an inorganic layer and / or an organic layer, and may have a single-layer or multi-layer structure. The second insulating layer 20 may include at least one of silicon oxide, silicon nitride, and silicon oxynitride. According to some embodiments, the second insulating layer 20 may have a multi-layer structure including a silicon oxide layer and a silicon nitride layer.

[0097] The third insulating layer 30 may be located on the second insulating layer 20. The third insulating layer 30 may have a single-layer or multi-layer structure. For example, the third insulating layer 30 may have a multi-layer structure including a silicon oxide layer and a silicon nitride layer.

[0098] The first connection electrode CNE1 may be located on the third insulating layer 30. The first connection electrode CNE1 may be connected to the connection signal line SCL through the contact hole CNT-1 passing through the first insulating layer 10 to the third insulating layer 30.

[0099] The fourth insulating layer 40 may be located on the third insulating layer 30. The fourth insulating layer 40 may be a single layer of silicon oxide. The fifth insulating layer 50 may be located on the fourth insulating layer 40. The fifth insulating layer 50 may be an organic layer.

[0100] The second connecting electrode CNE2 can be located on the fifth insulating layer 50. The second connecting electrode CNE2 can be connected to the first connecting electrode CNE1 through the contact hole CNT-2 passing through the fourth insulating layer 40 and the fifth insulating layer 50.

[0101] The sixth insulating layer 60 may be located on the fifth insulating layer 50 to cover the second connecting electrode CNE2. The sixth insulating layer 60 may be an organic layer.

[0102] The light-emitting element layer 130 may be located on the circuit layer 120. The light-emitting element layer 130 may include a light-emitting element 100PE. For example, the light-emitting element layer 130 may include organic light-emitting materials, quantum dots, quantum rods, microLEDs, or nanoLEDs. In the following description, the light-emitting element 100PE is described as an example of an organic light-emitting element, but is not particularly limited thereto.

[0103] The light-emitting element 100PE may include a first electrode AE, an emitting layer EL, and a second electrode CE. The first electrode AE ​​may be located on a sixth insulating layer 60. The first electrode AE ​​may be connected to a second connecting electrode CNE2 through a contact hole CNT-3 passing through the sixth insulating layer 60.

[0104] The pixel defining layer 70 may be located on the sixth insulating layer 60 to cover a portion of the first electrode AE. An opening 70-OP is defined in the pixel defining layer 70. The opening 70-OP of the pixel defining layer 70 exposes at least a portion of the first electrode AE.

[0105] Valid area 1000A (see) Figure 1 The electrode may include an emitting region PXA and a non-emitting region NPXA adjacent to the emitting region PXA. The non-emitting region NPXA may surround the emitting region PXA. According to some embodiments, the emitting region PXA may be defined to correspond to the portion of the region of the first electrode AE ​​exposed through the opening 70-OP.

[0106] The emitting layer EL can be located on the first electrode AE. The emitting layer EL can be located in the region corresponding to the opening 70-OP. That is, the emitting layer EL can be arranged for each pixel. When the emitting layer EL is arranged for each pixel, each of the emitting layer EL can emit light having at least one of blue, red, and green. However, embodiments of the inventive concept are not limited thereto. For example, the emitting layer EL can be commonly configured to be connected to the pixel. In this case, the emitting layer EL can provide blue light or white light.

[0107] The second electrode CE can be located on the emitter layer EL. The second electrode CE can have a monolithic shape and be commonly located in multiple pixels.

[0108] According to some embodiments, a hole control layer may be located between the first electrode AE ​​and the emitter layer EL. The hole control layer may be commonly located in the emitter region PXA and the non-emitter region NPXA. The hole control layer may include a hole transport layer and may also include a hole injection layer. An electron control layer may be located between the emitter layer EL and the second electrode CE. The electron control layer may include an electron transport layer and may also include an electron injection layer. The hole control layer and the electron control layer may be commonly formed in multiple pixels using an aperture mask.

[0109] The encapsulation layer 140 may be located on the light-emitting element layer 130. The encapsulation layer 140 may include inorganic layers, organic layers and inorganic layers stacked in sequence, but the layers constituting the encapsulation layer 140 are not limited to these.

[0110] The inorganic layer protects the light-emitting element layer 130 from moisture and oxygen, while the organic layer protects the light-emitting element layer 130 from foreign matter such as dust particles. The inorganic layer may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic layer may include an acrylic organic layer, but embodiments of the inventive concept are not limited thereto.

[0111] The sensor layer 200 can be positioned on the display layer 100 via a continuous process. In this case, the sensor layer 200 can be represented as being directly disposed on the display layer 100. Direct disposal can mean that a third component is not located between the sensor layer 200 and the display layer 100. That is, a separate adhesive member is not located between the sensor layer 200 and the display layer 100. Alternatively, the sensor layer 200 can be bonded to the display layer 100 by an adhesive member. The adhesive member can include a general-purpose adhesive or a pressure-sensitive adhesive.

[0112] The sensor layer 200 may include a substrate insulating layer 201, a first conductive layer 202, a sensing insulating layer 203, a second conductive layer 204, and a covering insulating layer 205.

[0113] The substrate insulating layer 201 may be an inorganic layer comprising at least one of silicon nitride, silicon oxynitride, and silicon oxide. Optionally, the substrate insulating layer 201 may be an organic layer comprising epoxy resin, acrylic resin, or imide resin. The substrate insulating layer 201 may have a single-layer structure or a multilayer structure wherein multiple layers are stacked on the third-direction DR3.

[0114] Each of the first conductive layer 202 and the second conductive layer 204 may have a single-layer structure or a multi-layer structure in which multiple layers are stacked on the third-direction DR3.

[0115] The conductive layer with a single-layer structure can include a metal layer or a transparent conductive layer. The metal layer can include molybdenum, silver, titanium, copper, aluminum, or alloys thereof. The transparent conductive layer can include transparent conductive oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium zinc tin oxide (IZTO). Alternatively, the transparent conductive layer can include conductive polymers such as PEDOT, metal nanowires, and graphene.

[0116] A conductive layer with a multilayer structure may include a metal layer. The metal layer may have a titanium / aluminum / titanium three-layer structure. A conductive layer with a multilayer structure may include at least one metal layer and at least one transparent conductive layer.

[0117] At least one of the sensing insulating layer 203 and the covering insulating layer 205 may include an inorganic layer. The inorganic layer may include at least one of alumina, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide.

[0118] At least one of the sensing insulating layer 203 and the covering insulating layer 205 may include an organic layer. The organic layer may include at least one of acrylic resins, methacrylic resins, polyisoprene resins, vinyl resins, epoxy resins, polyurethane resins, cellulose resins, siloxane resins, polyimide resins, polyamide resins, and perylene resins.

[0119] A parasitic capacitance Cb is generated between the sensor layer 200 and the second electrode CE. As the distance between the sensor layer 200 and the second electrode CE decreases, the value of the parasitic capacitance Cb increases. As the parasitic capacitance Cb increases, the ratio of the change in capacitance to a reference value decreases. The change in capacitance can refer to the capacitance generated when passing through an input unit (e.g., input device 2000, see reference CE). Figure 4 ) or the user's body 3000 (see Figure 4 The change in capacitance before and after the input.

[0120] The driver chip 300 (see) processes the signals sensed from the sensor layer 200. Figure 2 This can perform a balancing operation to remove the value corresponding to the parasitic capacitance Cb from the sensed signal. By performing the balancing operation, the ratio of the capacitance change to the reference value can be increased, thereby improving sensing sensitivity.

[0121] However, according to driver chip 300 (see...) Figure 2 The specifications of the driver chip may vary, potentially resulting in differences in the ability to remove the value corresponding to the parasitic capacitance Cb. For example, if the maximum parasitic capacitance Cb is approximately 500 picofarads, and it can be removed by the driver chip 300 (see...) Figure 2 If the capacitance value removed from the signal sensed by sensor layer 200 is approximately 200 picofarads, then the reference value may not be able to be driven by chip 300 (see...). Figure 2 The capacitance is sufficiently reduced. In this case, the change in capacitance is not significant compared to the reference value; therefore, it is possible that the driver chip 300 (see...) Figure 2 The change in capacitance is identified as noise or a failure to recognize touch coordinates. According to the inventive concept, the electrode structure of sensor layer 200 can be modified to set the maximum value of parasitic capacitance Cb to a value (e.g., a set value or a predetermined value) or smaller. In this case, even in driver chip 300 (see...) Figure 2 Even when the performance of the coordinate recognition is relatively low, the accuracy of coordinate recognition can still be improved. The value (e.g., a set value or a predetermined value) can be about 200 picofarads, but is not particularly limited thereto.

[0122] Figure 6 This is a plan view of the sensor layer according to some embodiments of the inventive concept.

[0123] Reference Figure 6 The effective region 200A and the peripheral region 200N can be defined on the sensor layer 200. The effective region 200A can be a region activated according to an electrical signal. For example, the effective region 200A can be a region sensing an input. The effective region 200A can be integrated with the electronic module 500 (see...). Figure 2 The effective area is 500A (see) Figure 2The outer region 200N can be stacked around the effective region 200A. The outer region 200N can be combined with the electronic module 500 (see...). Figure 2 The outer area of ​​500N (see) Figure 2 Stacked.

[0124] The sensor layer 200 may include a substrate insulating layer 201, multiple sensing units 210, multiple lines 220, and multiple cross lines 230. The multiple sensing units 210 may be located in the effective region 200A. The multiple lines 220 and multiple cross lines 230 may be located in the peripheral region 200N. The multiple cross lines 230 may also be referred to as multiple lines 230.

[0125] Each of the plurality of sensing units 210 may include a plurality of sub-sensing units 210-1. Figure 6 An example is shown in which one sensing unit 210 includes four sub-sensing units 210-1, but the number of multiple sub-sensing units 210-1 included in a sensing unit 210 according to some embodiments of the inventive concept is not limited thereto. For example, a sensing unit 210 may include nine or sixteen sub-sensing units 210-1.

[0126] Multiple sensing units 210 can be arranged in the first direction DR1 and the second direction DR2.

[0127] Multiple lines 220 and multiple cross lines 230 can be electrically connected to each of the multiple sub-sensing units 210-1.

[0128] Multiple lines 220 can be electrically connected to multiple first sensing pads TD1 via contact holes (see...). Figure 2 Multiple cross lines 230 can be electrically connected to multiple second sensing pads TD2 via contact holes (see...). Figure 2 ).

[0129] Figure 7A This is a plan view illustrating one of a plurality of sensing units according to some embodiments of the inventive concept. Figure 7B This is a plan view illustrating one of a plurality of sub-sensing units according to some embodiments of the inventive concept, and Figure 7C It is based on some embodiments of the inventive concept along Figure 7A A sectional view taken from line I-I'.

[0130] Reference Figures 7A to 7C Multiple sensing units 210 may have a first pitch PC1. The first pitch PC1 of the multiple sensing units 210 may be 3000 greater than the user's body (see figure). Figure 4 The first width of the input region WE1 (see) Figure 4The first pitch PC1 can be smaller, but is not particularly limited thereto. The first pitch PC1 can be approximately 3.5 mm to approximately 4.5 mm. For example, the first pitch PC1 can be approximately 4 mm. According to some embodiments of the inventive concept, the area of ​​each of the plurality of sensing units 210 can be larger than the user's body 3000 (see...). Figure 4 The input area of ​​the sensor layer 200 is small. Therefore, the sensor layer 200 can accurately sense the area passing through the user's body 3000 (see [reference]). Figure 4 The input coordinates.

[0131] For example, a sensing unit 210 may include a plurality of sub-sensing units 210-1. The plurality of sub-sensing units 210-1 may be arranged in a first direction DR1 and a second direction DR2. For example, four sub-sensing units 210-1 may be provided.

[0132] The plurality of sub-sensing units 210-1 may have a second pitch PC2. The second pitch PC2 of the plurality of sub-sensing units 210-1 may be greater than that of the input device 2000 (see...). Figure 4 The pen electrode 2600 (see) Figure 4 The second width WE2 is smaller, but not particularly limited thereto. The second pitch PC2 can be from about 1.0 mm to about 2.0 mm. For example, the second pitch PC2 can be about 1.5 mm. According to some embodiments of the inventive concept, the area of ​​each of the plurality of sub-sensing units 210-1 can be larger than that of the input device 2000 (see Figure 4 The pen electrode 2600 (see) Figure 4 The input area of ​​sensor layer 200 is small. Therefore, the sensor layer 200 (see...) Figure 4 It can accurately sense data via input device 2000 (see...) Figure 4 The input coordinates.

[0133] Each of the sub-sensing units 210-1 may include an electrode 211, a cross electrode 212, and a plurality of dummy electrodes 213.

[0134] Electrode 211 may extend in a first direction DR1. Cross electrode 212 may extend in a second direction DR2. Electrode 211 may cross with cross electrode 212 in an insulated manner. The term "insulated cross" or variations thereof or other similar phrases in this disclosure refer to two elements that cross, overlap or intersect in a plan view but are not electrically connected to each other at the intersection point in a plan view, such that an insulating material or gap may exist between the two elements.

[0135] A dummy electrode 213 may surround electrode 211 and cross electrode 212. When a dummy electrode 213 is positioned, the difference in transmittance or reflectance between the portion where electrode 211 or cross electrode 212 is positioned and the portion where electrode 211 or cross electrode 212 is not positioned can be reduced. As a result, the visual recognition of certain boundaries (e.g., the boundary between electrode 211 and cross electrode 212, or the boundary between the portion where electrode 211 or cross electrode 212 is positioned and the portion where electrode 211 or cross electrode 212 is not positioned) can be prevented or reduced.

[0136] When viewed in a plan view, electrode 211 and cross electrode 212 are connected to the second electrode CE (see diagram). Figure 5 The superimposed area can be reduced by using dummy electrodes 213. According to the inventive concept, the parasitic capacitance Cb can be reduced (see...). Figure 5 The value of ) can therefore be improved for sensor layer 200 (see Figure 6 The sensing sensitivity of the change in capacitance.

[0137] Electrode 211 may include multiple electrode patterns 211PT1 and 211PT2 and multiple bridging patterns 211B.

[0138] The plurality of electrode patterns 211PT1 and 211PT2 may include a first electrode pattern 211PT1 and a second electrode pattern 211PT2, the first electrode pattern 211PT1 and the second electrode pattern 211PT2 being spaced apart from each other, and a first intersection portion 212P1 being between the first electrode pattern 211PT1 and the second electrode pattern 211PT2.

[0139] The first electrode pattern 211PT1 may include a first part 211P1 and multiple second parts 211P2.

[0140] The first portion 211P1 may extend in the first direction DR1. A plurality of second portions 211P2 may protrude from the first portion 211P1. The first portion 211P1 and the plurality of second portions 211P2 may be integral with each other. The plurality of second portions 211P2 may include a plurality of first pattern portions protruding from the first portion 211P1 to extend in the second direction DR2, and a plurality of second pattern portions respectively protruding from the plurality of first pattern portions to extend in the first direction DR1.

[0141] The second electrode pattern 211PT2 may have a shape that is symmetrical with respect to the first electrode pattern 211PT1 about an axis extending in the second direction DR2.

[0142] In the first direction DR1, the first electrode pattern 211PT1 of one of the two adjacent sub-sensing units 210-1 and the second electrode pattern 211PT2 of the other sub-sensing unit 210-1 can be configured to be integrated with each other.

[0143] Multiple bridging patterns 211B can be electrically connected to multiple electrode patterns 211PT1 and 211PT2. The multiple bridging patterns 211B can cross insulatedly with the first crossing portion 212P1.

[0144] The cross electrode 212 may include a first cross portion 212P1 and a plurality of second cross portions 212P2.

[0145] The first intersecting portion 212P1 may extend in the second direction DR2. A plurality of second intersecting portions 212P2 may protrude from the first intersecting portion 212P1. The first intersecting portion 212P1 and the plurality of second intersecting portions 212P2 may be configured to be integral with each other.

[0146] The plurality of second intersecting portions 212P2 may include a first intersecting pattern portion 212PP1 and a second intersecting pattern portion 212PP2.

[0147] The first cross pattern portion 212PP1 may surround the second portion 211P2. The second portion 211P2 may surround the second cross portion 212PP2. The first cross pattern portion 212PP1, the second cross pattern portion 212PP2, and the second portion 211P2 may be positioned adjacent to each other. The length of the boundary between the first cross pattern portion 212PP1, the second cross pattern portion 212PP2, and the second portion 211P2 may be increased. According to some embodiments of the inventive concept, the mutual capacitance between the electrode 211 and the cross electrode 212 may be increased. As the mutual capacitance increases, the change in mutual capacitance may increase. Therefore, the sensor layer 200 (see...) may be improved. Figure 6 ) sensing sensitivity.

[0148] Reference Figure 7B The first cross portion 212P1, the multiple second cross portions 212P2, and the multiple electrode patterns 211PT1 and 211PT2 may have a grid structure.

[0149] The bridging pattern 211B may be located on the substrate insulating layer 201. The sensing insulating layer 203 may be located on the substrate insulating layer 201. The sensing insulating layer 203 may cover the bridging pattern 211B. The sensing insulating layer 203 may include inorganic materials, organic materials, or composite materials.

[0150] The first electrode pattern 211PT1, the second electrode pattern 211PT2, and the cross electrode 212 can be located on the sensing insulating layer 203.

[0151] Multiple first contact holes CNT1 can be defined to pass through the sensing insulating layer 203 on the third-direction DR3. The first electrode pattern 211PT1 and the second electrode pattern 211PT2 can be electrically connected to the bridging pattern 211B through the multiple first contact holes CNT1.

[0152] The covering insulating layer 205 may be located on the sensing insulating layer 203. The covering insulating layer 205 may cover the first electrode pattern 211PT1, the second electrode pattern 211PT2, and the cross electrode 212. The covering insulating layer 205 may include inorganic materials, organic materials, or composite materials.

[0153] Figure 7B The diagram shows a bottom bridging structure in which the bridging pattern 211B is located below the first electrode pattern 211PT1, the second electrode pattern 211PT2, and the cross electrode 212. However, according to some embodiments of the inventive concept, the sensor layer 200 (see...) Figure 6 The structure of the sensor layer 200 is not limited thereto. For example, according to some embodiments of the inventive concept, the sensor layer 200 (see Figure 6 It may have a top bridging structure in which the bridging pattern 211B is located on the first electrode pattern 211PT1, the second electrode pattern 211PT2 and the cross electrode 212.

[0154] Figure 8 These are plan views of electronic devices based on some embodiments of the inventive concept.

[0155] Reference Figure 6 and Figure 8 The multiple sub-sensing units 210-1 may include a first sub-sensing unit 211-1, a second sub-sensing unit 212-1, a third sub-sensing unit 213-1, and a fourth sub-sensing unit 214-1.

[0156] The second sub-sensing unit 212-1 may be adjacent to the first sub-sensing unit 211-1 in the second direction DR2. The third sub-sensing unit 213-1 may be adjacent to the first sub-sensing unit 211-1 in the first direction DR1. The fourth sub-sensing unit 214-1 may be adjacent to the second sub-sensing unit 212-1 in the first direction DR1 and to the third sub-sensing unit 213-1 in the second direction DR2.

[0157] Multiple lines 220 may include a first line 221 and a second line 222.

[0158] The first wire 221 can be electrically connected to the electrodes 211 of the first sub-sensing unit 211-1 and the third sub-sensing unit 213-1 (see...). Figure 7AThe second wire 222 can be electrically connected to the electrodes 211 of each of the second sub-sensing unit 212-1 and the fourth sub-sensing unit 214-1 (see...). Figure 7A ).

[0159] The multiple crossing lines 230 may include a first crossing line 231 and a second crossing line 232. The first crossing line 231 may also be referred to as the third line 231. The second crossing line 232 may also be referred to as the fourth line 232.

[0160] The first cross wire 231 can be electrically connected to the cross electrode 212 of each of the first sub-sensing unit 211-1 and the second sub-sensing unit 212-1 (see...). Figure 7A The second cross line 232 can be electrically connected to the cross electrode 212 of each of the third sub-sensing unit 213-1 and the fourth sub-sensing unit 214-1 (see...). Figure 7A ).

[0161] The driver chip 300 can be electrically connected to the sensor layer 200. The driver chip 300 may include multiple driver circuits 301. The multiple driver circuits 301 can be respectively connected to the first line 221, the second line 222, the first cross line 231, and the second cross line 232.

[0162] Each of the plurality of driving circuits 301 may include a first driving circuit 310 and a second driving circuit 320.

[0163] The first driving circuit 310 may include a first driving switch 311 and a first driving unit 312. The second driving circuit 320 may include a second driving switch 321 and a second driving unit 322.

[0164] Electronic device 1000 (see Figure 1 It may also include multiple switches 910, 920, 930, and 940. Multiple switches 910, 920, 930, and 940 may be located in the peripheral area 200N. Multiple switches 910, 920, 930, and 940 may include a first switch 910, a second switch 920, a third switch 930, and a fourth switch 940.

[0165] The first switch 910 can be connected between the first line 221 and the second line 222. The second switch 920 can be connected between the first line 221 and the driver chip 300. However, this is merely an example, and the connection relationship of the second switch 920 according to some embodiments of the inventive concept is not limited thereto. For example, the second switch 920 can be connected between the second line 222 and the driver chip 300.

[0166] The third switch 930 can be connected between the first cross wire 231 and the second cross wire 232. The fourth switch 940 can be connected between the second cross wire 232 and the driver chip 300. However, this is merely an example, and the connection relationship of the fourth switch 940 according to some embodiments of the inventive concept is not limited thereto. For example, the fourth switch 940 can be connected between the first cross wire 231 and the driver chip 300.

[0167] Figure 9 This is a diagram illustrating the operation of a plurality of switches and a plurality of drive switches according to some embodiments of the inventive concept.

[0168] Reference Figure 8 and Figure 9 The sensor layer 200 can operate in either the first mode MD1 or the second mode MD2. The first mode MD1 and the second mode MD2 can be operated alternately.

[0169] Sensor layer 200 can be used in first mode MD1 via electrode 211 (see...) Figure 7A ) and cross electrode 212 (see Figure 7A The change in mutual capacitance between the two is sensed by sensing the user's body 3000 (see Figure 4 Input from the user's body (see 3000). Figure 4 The input of ) can be called the first input.

[0170] Sensor layer 200 can be transmitted through electrode 211 in second mode MD2 (see...) Figure 7A ) and cross electrode 212 (see Figure 7A The capacitance change of each in the input device 2000 is sensed by the input device 2000 (see Figure 4 Input via input device 2000 (see...) Figure 4 The input of ) can be called the second input.

[0171] The first drive switch 311 can be controlled by the first drive switch signal 311-S. The first drive switch signal 311-S allows the first drive switch 311 to operate in either an ON or OFF state. Through the first drive switch signal 311-S, the first drive switch 311 can operate in the ON state in the first mode MD1, and can operate in the OFF state in the second mode MD2.

[0172] The second drive switch 321 can be controlled by the second drive switch signal 321-S. The second drive switch signal 321-S allows the second drive switch 321 to operate in either an on or off state. Through the second drive switch signal 321-S, the second drive switch 321 can operate in the off state in the first mode MD1, and can operate in the on state in the second mode MD2.

[0173] The first switch 910 can be controlled by the first switch signal 910-S. The first switch signal 910-S allows the first switch 910 to operate in either an ON or OFF state. Through the first switch signal 910-S, the first switch 910 can operate in the ON state in the first mode MD1 and in the OFF state in the second mode MD2.

[0174] The second switch 920 can be controlled by the second switch signal 920-S. The second switch signal 920-S allows the second switch 920 to operate in either an ON or OFF state. Through the second switch signal 920-S, the second switch 920 can operate in the OFF state in the first mode MD1 and in the ON state in the second mode MD2.

[0175] The third switch 930 can be controlled by the third switch signal 930-S. The third switch signal 930-S allows the third switch 930 to operate in either an ON or OFF state. Through the third switch signal 930-S, the third switch 930 can operate in the ON state in the first mode MD1 and in the OFF state in the second mode MD2.

[0176] The fourth switch 940 can be controlled by the fourth switch signal 940-S. The fourth switch signal 940-S allows the fourth switch 940 to operate in either an ON or OFF state. Through the fourth switch signal 940-S, the fourth switch 940 can operate in the OFF state in the first mode MD1 and in the ON state in the second mode MD2.

[0177] Figure 10 This is a diagram of an electronic device operating in a first mode according to some embodiments of the inventive concept. In the description... Figure 10 At that time, for those who passed Figure 8 The components described will use the same reference numerals, and their descriptions will be omitted.

[0178] Reference Figure 9 and Figure 10 The sensor layer 200 can operate in the first mode MD1.

[0179] In the first mode MD1, the first switch 910 and the third switch 930 can be operated in the on state, and the second switch 920 and the fourth switch 940 can be operated in the off state.

[0180] The operation of the first switch 910 and the third switch 930 in the ON state can mean that each of the first switch 910 and the third switch 930 is in the OFF state. The first wire 221 and the second wire 222 can be connected to each other through the first switch 910. The first cross wire 231 and the second cross wire 232 can be connected to each other through the third switch 930.

[0181] Operating the second switch 920 and the fourth switch 940 in the off state can mean that each of the second switch 920 and the fourth switch 940 is in the open state.

[0182] The first line 221 and the second line 222 can be electrically connected to the same first drive circuit 301-1 via the first switch 910 and the second switch 920.

[0183] The first cross wire 231 and the second cross wire 232 can be electrically connected to the same second drive circuit 301-2 through the third switch 930 and the fourth switch 940.

[0184] In the first mode MD1, the first drive switch 311-1 of the first drive circuit 301-1 can be operated in the on state by the first drive switch signal 311-S, and the second drive switch 321-1 can be operated in the off state by the second drive switch signal 321-S.

[0185] The first drive switch 311-1 operating in the ON state can mean that the first drive switch 311-1 is in the OFF state. The first drive unit 312-1 can be electrically connected to the first line 221 and the second line 222 through the first drive switch 311-1.

[0186] Operating the second drive switch 321-1 in the off state means that the second drive switch 321-1 is in the open state. The second drive unit 322-1 is not electrically connected to the first line 221 and the second line 222 through the second drive switch 321-1.

[0187] The first driving section 312-1 of the first driving circuit 301-1 can provide the output signal S1 to the electrode 211 (see...). Figure 7A ).

[0188] In the first mode MD1, the first drive switch 311-2 of the second drive circuit 301-2 can be operated in the on state by the first drive switch signal 311-S, and the second drive switch 321-2 can be operated in the off state by the second drive switch signal 321-S.

[0189] The first drive switch 311-2 operating in the ON state can mean that the first drive switch 311-2 is in the OFF state. The first drive unit 312-2 can be electrically connected to the first cross line 231 and the second cross line 232 through the first drive switch 311-2.

[0190] Operating the second drive switch 321-2 in the off state means that the second drive switch 321-2 is in the open state. The second drive unit 322-2 is not electrically connected to the first cross line 231 and the second cross line 232 through the second drive switch 321-2.

[0191] The first driving section 312-2 of the second driving circuit 301-2 can drive from the cross electrode 212 (see...) Figure 7A ) Receive sensing signal S2.

[0192] In the first mode MD1, the sensor layer 200 can sense the input based on each of the plurality of sensing units 210.

[0193] In the first mode MD1, the first driving unit 312-1 can provide the output signal S1 to the electrode 211. The first driving unit 312-2 can receive the sensing signal S2 from the cross electrode 212. That is, in the first mode MD1, the electrode 211 can be used as a transmitting electrode, and the cross electrode 212 can be used as a receiving electrode. However, this is merely an example, and the operation of the electrode 211 and the cross electrode 212 according to some embodiments of the inventive concept is not limited thereto. For example, in the first mode MD1, the cross electrode 212 can be used as a transmitting electrode, and the electrode 211 can be used as a receiving electrode. In the first mode MD1, the first driving units 312-1 and 312-2 can sense the change in mutual capacitance generated between the electrode 211 and the cross electrode 212 to sense external input.

[0194] According to the inventive concept, the first wire 221 and the second wire 222 can be connected via a first switch 910 to provide an output signal S1 to each of the plurality of sensing units 210. The first cross wire 231 and the second cross wire 232 can be connected via a third switch 930 to receive a sensing signal S2 from each of the plurality of sensing units 210. The first drive unit 312-2 can receive a relatively large signal compared to the case where signals are received from each of the plurality of sub-sensing units 210-1 via the first cross wire 231 and the second cross wire 232 connected to each other. The user's body 3000 (see Figure 4 Therefore, the sensor layer 200 can be improved in relation to the user's body 3000 (see...). Figure 4 ) sensing reliability.

[0195] Furthermore, according to the inventive concept, when the user's body is sensed 3000 (see...) Figure 4When the sensor layer 200 is superimposed on the user's body 3000 (see sensor layer 200), the user's body 3000 (see sensor layer 200) is also superimposed on the sensor layer 200. Figure 4 The input area can cover the sensing unit 210. Even on the user's body 3000 (see...) Figure 4 When moving, it can also continuously sense the user's body movement (see 3000). Figure 4 The change in mutual capacitance between electrode 211 and cross electrode 212 caused by this. Therefore, the sensor layer 200 can improve the interaction between the sensor layer 200 and the user's body 3000 (see [reference]). Figure 4 (Sensing reliability and coordinate accuracy)

[0196] Figure 11 These are diagrams of an electronic device operating in a second mode according to some embodiments of the inventive concept. In the description... Figure 11 At that time, for those who passed Figure 8 The components described will use the same reference numerals, and their descriptions will be omitted.

[0197] Reference Figure 9 and Figure 11 Sensor layer 200 can operate in the second mode MD2.

[0198] In the second mode MD2, the first switch 910 and the third switch 930 can be operated in the off state, and the second switch 920 and the fourth switch 940 can be operated in the on state.

[0199] Operating the first switch 910 and the third switch 930 in the off state can mean that each of the first switch 910 and the third switch 930 is in the open state.

[0200] The operation of the second switch 920 and the fourth switch 940 in the on state can mean that each of the second switch 920 and the fourth switch 940 is in the closed state.

[0201] When the second switch 920 and the fourth switch 940 are in the ON state, the first wire 221, the second wire 222, the first cross wire 231, and the second cross wire 232 can be electrically connected to multiple drive circuits 301 respectively (see...). Figure 8 ).

[0202] In the second mode MD2, multiple drive circuits 301 (see...) Figure 8 The first drive switch 311 of each of them (see) Figure 8 It can be operated in the off state via the first drive switch signal 311-S, and the second drive switch 321 (see...) Figure 8 It can be operated in the ON state via the second drive switch signal 321-S.

[0203] Multiple drive circuits 301 (see) Figure 8It may include a first driving circuit 301-1, a second driving circuit 301-2, a third driving circuit 301-3, and a fourth driving circuit 301-4.

[0204] First drive switch 311 (see...) Figure 8 Operating in the off state can refer to the first drive switch 311 (see...) Figure 8 It is in the disconnected state.

[0205] The first driving section 312-1 of the first driving circuit 301-1 will not be connected to the second line 222. The first driving section 312-2 of the second driving circuit 301-2 will not be connected to the first cross line 231. The first driving section 312-3 of the third driving circuit 301-3 will not be connected to the first line 221. The first driving section 312-4 of the fourth driving circuit 301-4 will not be connected to the second cross line 232.

[0206] Second drive switch 321 (see) Figure 8 Operation in the ON state can refer to the second drive switch 321 (see...) Figure 8 It is in a closed state.

[0207] The second driving section 322-1 of the first driving circuit 301-1 can be electrically connected to the second line 222. The second driving section 322-2 of the second driving circuit 301-2 can be electrically connected to the first cross line 231. The second driving section 322-3 of the third driving circuit 301-3 can be electrically connected to the first line 221. The second driving section 322-4 of the fourth driving circuit 301-4 can be electrically connected to the second cross line 232. That is, the multiple second driving sections 322 of the driving chip 300 (see...) Figure 8 They can be electrically connected to the first line 221, the second line 222, the first cross line 231, and the second cross line 232, respectively.

[0208] In the second mode MD2, the sensor layer 200 can sense input based on each of the plurality of sub-sensing units 210-1. When an input device 2000 is sensed, the input area of ​​the input device 2000 overlapping with the sensor layer 200 can cover one sub-sensing unit 210-1. This is because the plurality of sub-sensing units 210-1 used to identify the input device 2000 (see...) Figure 7A Each of the sensors in the sensor layer 200 is covered by the input device 2000, thus improving the sensing accuracy of the sensor layer 200 relative to the input device 2000.

[0209] Multiple drive circuits 301 (see) Figure 8 The second drive unit 322 of each of them (see) Figure 8 It can receive sensing signals S3a, S3b, S4a, and S4b sensed from the input device 2000. Here, multiple sub-sensing units 210-1 (see...) Figure 7A Electrode 211 of each in ) (see Figure 7A ) and cross electrode 212 (see Figure 7A This can be used to provide sensing signals S3a, S3b, S4a, and S4b to the second drive unit 322 (see...). Figure 8 The receiving electrode of ). However, this is just an example; multiple sub-sensing units 210-1 (see Figure 7A Electrode 211 of each in ) (see Figure 7A ) and cross electrode 212 (see Figure 7A This can be used as a transmitting electrode to provide the input uplink signal to the input device 2000. That is, in the second mode MD2, electrode 211 (see...) Figure 7A ) and cross electrode 212 (see Figure 7A Both can be used as transmitting electrodes or receiving electrodes.

[0210] The pen electrode 2600 may include a first pen electrode 2610 and a second pen electrode 2620. The first pen electrode 2610 may be located at one end of the input device 2000. The second pen electrode 2620 may be located on a side surface of the input device 2000. The sensor layer 200 can obtain the coordinates of the input device 2000 through the first pen electrode 2610 and the tilt angle of the input device 2000 through the second pen electrode 2620.

[0211] Furthermore, according to the inventive concept, the difference between the first capacitance CAP1a caused by the first electrode 2610 when the input device 2000 is located at a first position within a sensing unit 210 and the second capacitance CAP1b caused by the first electrode 2610 when the input device 2000 is located at a second position within the same sensing unit 210 can be reduced. Even if the input device 2000 moves, the capacitance of each of the electrodes 211 and the cross electrode 212 caused by the input device 2000 can be continuously sensed. That is, the coordinate accuracy and sensing reliability of the sensor layer 200 can be improved in inputs provided in the form of lines (such as when writing characters or drawing pictures using the input device 2000). As a result, the linearity of the input can be improved.

[0212] Furthermore, according to the inventive concept, the difference between the first capacitance CAP2a caused by the second electrode 2620 when the input device 2000 is in the first position and the second capacitance CAP2b caused by the second electrode 2620 when the input device 2000 is in the second position can be reduced. That is, the capacitance deviation between the input device 2000 and the sensor layer 200 depending on the position of the input device 2000 within a sensing unit 210 can be reduced. Therefore, the tilt accuracy and sensing reliability of the sensor layer 200 relative to the input device 2000 can be improved.

[0213] Figure 12 This is a plan view illustrating a portion of an electronic device according to some embodiments of the inventive concept. In the description Figure 12 At that time, for those who passed Figure 8 The components described will use the same reference numerals, and their descriptions will be omitted.

[0214] Reference Figure 12 The first switch 910-1, the second switch 920-1, the third switch 930-1, and the fourth switch 940-1 can be included in the driver chip 300-1. This can reduce the area of ​​the peripheral region 200N of the sensor layer 200. Therefore, a narrow bezel can be achieved.

[0215] According to some embodiments of the inventive concept, a sensor layer including multiple sensing units can sense input through a user's body and an input device, each of the multiple sensing units including multiple sub-sensing units. The input area of ​​the user's body can cover the sensing units. When input is input through the user's body, the sensor layer can sense the input based on the sensing units via multiple switches. Therefore, a larger signal can be received compared to the case where signals are received from each of the multiple sub-sensing units. Thus, the sensing reliability of the sensor layer relative to the user's body can be improved. The input area of ​​the input device can cover the sub-sensing units. When input is input through the input device, the sensor layer can sense the input based on the sub-sensing units via multiple switches. Since the sub-sensing units used to identify the input device are covered by the input device, the sensing accuracy of the sensor layer relative to the input device can be improved.

[0216] It will be apparent to those skilled in the art that various modifications and variations can be made to this invention. Therefore, it is intended that this disclosure cover modifications and variations of the invention, provided they fall within the scope of the appended claims and their equivalents. Consequently, the technical scope of this invention should not be limited to what is described in the detailed description of the specification, but should be determined by the claims.

Claims

1. An electronic device, the electronic device comprising: Display layer; A sensor layer is located on the display layer and has an effective area and a peripheral area adjacent to the effective area. The driver chip is electrically connected to the sensor layer; as well as Multiple switches are connected between the sensor layer and the driver chip. The sensor layer includes multiple sensing units in the effective area and multiple lines in the peripheral area that are electrically connected to the multiple sensing units. Each of the plurality of sensing units includes a plurality of sub-sensing units arranged in a first direction and a second direction intersecting the first direction. The plurality of sub-sensing units includes a first sub-sensing unit and a second sub-sensing unit adjacent to the first sub-sensing unit in the second direction. The plurality of lines includes a first line electrically connected to the first sub-sensing unit and a second line electrically connected to the second sub-sensing unit, and The plurality of switches includes a first switch connected between the first line and the second line, and a second switch connected between the first line and the driver chip. The sensor layer is configured to operate in a first mode or a second mode different from the first mode, such that... In the first mode, the first switch operates in the ON state, and the second switch operates in the OFF state. In the second mode, the first switch operates in the off state, and the second switch operates in the on state. Each of the plurality of sub-sensing units includes an electrode and a cross electrode that intersects the electrode in an insulated manner. The sensor layer is configured to sense touch input in the first mode by means of changes in mutual capacitance generated between the electrodes and the cross electrodes, and The sensor layer is configured to sense input through the input device in the second mode by means of changes in the capacitance of each of the electrodes and the cross electrodes.

2. The electronic device according to claim 1, wherein, The driver chip includes a plurality of first driver units configured to operate in the first mode and a plurality of second driver units configured to operate in the second mode.

3. The electronic device according to claim 2, wherein, In the first mode, the first line and the second line are configured to be connected to each other, and In the second mode, the plurality of lines are configured to be electrically connected to the plurality of second drive units respectively.

4. The electronic device according to claim 1, wherein, In the first mode, the sensor layer is configured to sense input based on each of the plurality of sensing units, and In the second mode, the sensor layer is configured to sense input based on each of the plurality of sub-sensing units.

5. The electronic device according to claim 1, wherein, The cross electrode includes: The first intersecting portion extends in the second direction; and Multiple second intersecting portions protrude from the first intersecting portion. The electrodes include: Multiple electrode patterns, spaced apart from each other, with the first intersecting portion between the multiple electrode patterns; and The bridging pattern crosses the first crossing portion insulated from and is electrically connected to the plurality of electrode patterns.

6. The electronic device according to claim 5, wherein, The first intersection portion, the plurality of second intersection portions, and the plurality of electrode patterns have a grid structure.

7. The electronic device according to claim 1, wherein, The plurality of sub-sensing units further includes a third sub-sensing unit that is adjacent to the first sub-sensing unit in the first direction. The plurality of lines also includes a third line electrically connected to the first sub-sensing unit and a fourth line electrically connected to the third sub-sensing unit, and The plurality of switches also includes a third switch connected between the third line and the fourth line, and a fourth switch connected between the fourth line and the driver chip.

8. The electronic device according to claim 7, wherein, In the first mode, the third switch operates in the ON state, and the fourth switch operates in the OFF state. In the second mode, the third switch operates in the off state, and the fourth switch operates in the on state.

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