Substrate processing apparatus and substrate handling method

Abstract

This invention provides an apparatus for processing a substrate. The apparatus may include: a housing having a processing space; a transfer robot for moving a substrate into or out of the processing space; a support unit having a chuck for supporting the substrate in the processing space and a lifting pin for moving the substrate in a vertical direction; a dielectric plate configured such that its bottom surface faces the top surface of the chuck; and an interval measuring unit for measuring the interval between the dielectric plate and the substrate supported by the lifting pin, or between the dielectric plate and the chuck.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate handling method. Background Technology

[0002] Plasma refers to an ionized gaseous state composed of ions, free radicals, and electrons, generated by very high temperatures, strong magnetic fields, or high-frequency electromagnetic fields (RF Electromagnetic Fields). Semiconductor device manufacturing processes include ashing or etching processes that use plasma to remove films on substrates. These ashing or etching processes are performed by the collision or reaction of ions and free radical particles contained in the plasma with the films on the substrate.

[0003] A substrate processing apparatus using plasma to process substrates includes: a process chamber; a chuck supporting the substrate within the process chamber; a lifting pin for moving the substrate vertically; and a transport robot for transporting the substrate into the process chamber. When the transport robot moves the substrate into the process chamber, the lifting pin rises, and the robot receives the substrate. Then, the lifting pin lowers, placing the substrate on the chuck. Conversely, when the transport robot removes the substrate from the process chamber, the lifting pin rises, separating the substrate from the chuck. The robot then receives the substrate from the lifting pin and removes the substrate from the process chamber.

[0004] However, when the handling robot passes the substrate to the lifting pin, if the substrate is already placed on the lifting pin, the robot's hand may collide with the substrate placed on the lifting pin.

[0005] Additionally, when the handling robot receives the substrate from the lifting pin, if the height of the substrate is not properly raised (e.g., the height of the substrate is higher or lower than the set height), or if the substrate is in a state unsuitable for removal (e.g., the substrate placed on the lifting pin is tilted), the handling robot's hand may collide with the lifting pin or the substrate placed on the lifting pin. Summary of the Invention

[0006] One object of the present invention is to provide a substrate processing apparatus and a substrate handling method that can effectively handle substrates.

[0007] In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate handling method that minimizes the risk of collision between the hand of the transfer robot and the substrate and / or the lifting pin when the substrate is moved into or out of the housing.

[0008] In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate handling method, which can confirm the position of the substrate in the housing or whether the substrate exists in the housing when the substrate is moved into or out of the housing.

[0009] In addition, an object of the present invention is to provide a substrate processing apparatus and a substrate handling method, which can determine whether to move the substrate into or out of the housing based on the position of the substrate within the housing or whether the substrate is present in the housing.

[0010] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art to which this invention pertains can clearly understand the problems not mentioned based on this specification and the accompanying drawings.

[0011] This invention provides an apparatus for processing a substrate. The apparatus may include: a housing having a processing space; a transfer robot for moving a substrate into or out of the processing space; a support unit having a chuck for supporting the substrate in the processing space and a lifting pin for moving the substrate in a vertical direction; a dielectric plate configured such that its bottom surface faces the top surface of the chuck; and an interval measuring unit for measuring the interval between the dielectric plate and the substrate supported by the lifting pin, or between the dielectric plate and the chuck.

[0012] According to one embodiment, the interval measuring unit may include: an illumination section for illuminating light; and a light receiving section disposed on the path of the light and receiving the light.

[0013] According to one embodiment, the housing may include a pair of observation ports arranged opposite each other, the irradiation unit may be mounted on either of the pair of observation ports, and the light receiving unit may be mounted on the other of the pair of observation ports.

[0014] According to one embodiment, a plurality of such interval measuring units may be provided, and when viewed from the top, the travel path of the light irradiated by any one of the irradiation parts in the interval measuring unit and the travel path of the light irradiated by another irradiation part in the interval measuring unit may be set to be perpendicular.

[0015] According to one embodiment, when the substrate is placed on the lifting pin, the interval measuring unit can measure the interval between the top surface of the substrate and the bottom surface of the dielectric plate, and when the substrate is not placed on the lifting pin, it can measure the interval between the top surface of the chuck and the bottom surface of the dielectric plate.

[0016] According to one embodiment, the device may further include a controller that can control the support unit and the interval measuring unit to raise the lifting pin and measure the interval while the lifting pin is raised.

[0017] According to one embodiment, the controller can store an upper limit setting value for the distance from the bottom surface of the dielectric plate as a first interval and / or a lower limit setting value for the distance from the bottom surface of the dielectric plate as a second interval less than the first interval, and compare the measured interval with the upper limit setting value and / or the lower limit setting value to determine whether to move the substrate into the processing space or move the substrate out of the processing space.

[0018] According to one embodiment, the controller can compare the interval with the upper limit setting value when the substrate is moved into the processing space, and when the interval is greater than the upper limit setting value, control the transfer robot to move the substrate into the processing space.

[0019] According to one embodiment, the controller can compare the interval with the upper limit setting value when the substrate is moved into the processing space, and control the device to generate an interlock when the interval is less than the upper limit setting value.

[0020] According to one embodiment, the controller can compare the interval with the upper limit setting value and the interval with the lower limit setting value when the substrate is removed from the processing space, and control the transfer robot to remove the substrate from the processing space when the interval is less than the upper limit setting value and greater than the lower limit setting value.

[0021] According to one embodiment, the controller can compare the interval with the upper limit setting value and the interval with the lower limit setting value when the substrate is removed from the processing space, and control the device to generate an interlock when the interval is greater than the upper limit setting value or less than the lower limit setting value.

[0022] Furthermore, the present invention provides a method for transporting a substrate using a substrate processing apparatus. The method involves raising a lifting pin, measuring the interval while the lifting pin is raised, and determining whether to move the substrate into or out of the processing space based on the measured interval.

[0023] According to one embodiment, the measured interval can be compared with an upper limit setting of a first interval and / or a lower limit setting of a second interval less than the first interval at the distance from the bottom surface of the dielectric plate to determine whether to move the substrate into or out of the processing space.

[0024] According to one embodiment, the interval can be compared with the upper limit setting value when the substrate is moved into the processing space, and the substrate is moved into the processing space when the interval is greater than the upper limit setting value.

[0025] According to one embodiment, the interval can be compared with the upper limit setting value when the substrate is moved into the processing space, and an interlock is generated when the interval is less than the upper limit setting value.

[0026] According to one embodiment, when the substrate is removed from the processing space, the interval can be compared with the upper limit setting value and the interval can be compared with the lower limit setting value, and the substrate can be removed from the processing space when the interval is less than the upper limit setting value and greater than the lower limit setting value.

[0027] According to one embodiment, when the substrate is removed from the processing space, the interval can be compared with the upper limit setting value and the interval with the lower limit setting value, and an interlock is generated when the interval is greater than the upper limit setting value or less than the lower limit setting value.

[0028] According to one embodiment of the present invention, the substrate can be transported efficiently.

[0029] In addition, according to one embodiment of the present invention, when the substrate is moved into or out of the housing, the risk of collision between the hand of the transfer robot and the substrate and / or the lifting pin can be minimized.

[0030] In addition, according to one embodiment of the present invention, when the substrate is moved into or out of the housing, it is possible to confirm the position of the substrate in the housing or whether the substrate exists in the housing.

[0031] In addition, according to one embodiment of the present invention, it is possible to determine whether to move the substrate into or out of the housing based on the position of the substrate within the housing or whether the substrate is present within the housing.

[0032] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand any effects not mentioned from this specification and the accompanying drawings. Attached Figure Description

[0033] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0034] Figure 2 It shows the setting Figure 1 A figure shows an embodiment of a substrate processing apparatus in a processing chamber.

[0035] Figure 3 It is shown Figure 2 Figure 1 shows an embodiment of a substrate processing apparatus performing a plasma processing step.

[0036] Figure 4This is a flowchart illustrating a substrate handling method according to an embodiment of the present invention.

[0037] Figure 5 This diagram illustrates the situation of the substrate processing apparatus when the interval value measured by the interval measurement unit is greater than the upper limit setting value.

[0038] Figure 6 This diagram illustrates the situation of the substrate processing apparatus when the interval value measured by the interval measurement unit is less than the upper limit setting value.

[0039] Figure 7 This is a flowchart illustrating a substrate handling method according to another embodiment of the present invention.

[0040] Figure 8 This diagram illustrates the substrate handling apparatus when a substrate placed on a lifting pin is raised to a height suitable for removal from the housing.

[0041] Figure 9 This diagram illustrates a substrate handling apparatus in a state where a substrate placed on a lifting pin is not suitable for removal from the housing.

[0042] Explanation of reference numerals in the attached figures

[0043] Substrate processing device: 1000

[0044] Casing: 100

[0045] Interval measurement units: 210, 220

[0046] Support unit: 300

[0047] Chuck: 310

[0048] Insulating ring: 330

[0049] Lower electrode: 350

[0050] Dielectric board unit: 500

[0051] First base: 510

[0052] Dielectric board: 520

[0053] Upper electrode unit: 600

[0054] Second base: 610

[0055] Upper electrode: 620

[0056] Temperature control panel: 700

[0057] Gas supply unit: 800 Detailed Implementation

[0058] In the following, embodiments of the invention will be described in detail with reference to the accompanying drawings to enable those skilled in the art to readily implement the invention. However, the invention can be implemented in various forms and is not limited to the embodiments described herein. Furthermore, in describing preferred embodiments of the invention in detail, detailed descriptions of related known functions or configurations will be omitted where such descriptions would unnecessarily obscure the subject matter of the invention. Additionally, in all the drawings, the same reference numerals are used for parts having similar functions and effects.

[0059] It should be understood that, unless specifically stated to the contrary, “comprising” a constituent element means that other constituent elements may be further included, rather than excluding other constituent elements. Specifically, terms such as “comprising” or “having” are intended to indicate the presence of the features, figures, steps, actions, constituent elements, components or combinations thereof described in the specification, but do not preclude the possibility of the presence or addition of one or more other features or figures, steps, actions, constituent elements, components or combinations thereof.

[0060] Unless the context clearly indicates otherwise, singular expressions include plural expressions. Additionally, the shapes and sizes of elements in the accompanying drawings may be exaggerated for clarity.

[0061] In the following text, reference will be made to Figures 1 to 9 The embodiments of the present invention are described in detail below.

[0062] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present invention. (Refer to...) Figure 1 The substrate processing apparatus 1 has an equipment front end module (EFEM) 20 and a processing module 30. The equipment front end module 20 and the processing module 30 are arranged in one direction.

[0063] The device front-end module 20 has a load port 10 and a transfer frame 21. The load port 10 is positioned in front of the device front-end module 20 in a first direction 11. The load port 10 has a plurality of supports 6. Each support 6 is arranged in a row in a second direction 12 and a carrier 4 (e.g., a box, FOUP, etc.) is placed thereon, the carrier 4 containing a substrate W to be provided to the process and a substrate W to be processed. The transfer frame 21 is disposed between the load port 10 and the processing module 30. The transfer frame 21 includes a first transfer robot 25, which is disposed inside the transfer frame 21 and transfers the substrate W between the load port 10 and the processing module 30. The first transfer robot 25 moves along a transfer track 27 provided in the second direction 12, thereby transferring the substrate W between the carrier 4 and the processing module 30.

[0064] The processing module 30 includes a loading and locking chamber 40, a transfer chamber 50, and a processing chamber 60. The processing module 30 can receive and process the substrate W from the front-end module 20 of the device.

[0065] The loading locking chamber 40 is configured adjacent to the transfer frame 21. As an example, the loading locking chamber 40 may be configured between the transfer chamber 50 and the equipment front-end module 20. The loading locking chamber 40 provides a waiting space before the substrate W to be provided in the process is transferred to the processing chamber 60, or provides a waiting space before the substrate W that has completed the process is transferred to the equipment front-end module 20.

[0066] The transfer chamber 50 can transport the substrate W. The transfer chamber 50 is configured adjacent to the loading and locking chamber 40. When viewed from above, the transfer chamber 50 has a polygonal body. (See reference...) Figure 1Viewed from above, the transfer chamber 50 has a pentagonal main body. A loading and locking chamber 40 and a plurality of processing chambers 60 are arranged around the perimeter of the main body. Passageways (not shown) for the entry and exit of substrates W are formed on each side wall of the main body, and these passageways connect the transfer chamber 50 to either the loading and locking chamber 40 or the processing chambers 60. Each passageway has a door (not shown) for opening and closing to seal its interior. A second transfer robot 53 is arranged within the internal space of the transfer chamber 50 to transfer substrates W between the loading and locking chambers 40 and the processing chambers 60. The second transfer robot 53 transfers unprocessed substrates W waiting in the loading and locking chamber 40 to the processing chamber 60, or transfers substrates W that have completed processing steps to the loading and locking chamber 40. Additionally, the second transfer robot 53 can move substrates W into or out of the processing space 102 of the housing 100 (described later). Furthermore, the second transfer robot 53 can transfer substrates W between the processing chambers 60 to sequentially provide substrates W to the plurality of processing chambers 60. Figure 1 As shown, when the transfer chamber 50 has a pentagonal main body, a loading and locking chamber 40 is arranged on the side wall adjacent to the front-end module 20 of the equipment, and processing chambers 60 are continuously arranged on the remaining side walls. In addition to the above shape, the transfer chamber 50 can also be configured into various shapes according to the required process modules.

[0067] Processing chamber 60 may be arranged adjacent to transfer chamber 50. Processing chamber 60 is arranged around transfer chamber 50. Multiple processing chambers 60 may be provided. In each processing chamber 60, process processing can be performed on substrate W. Processing chamber 60 receives substrate W from second transfer robot 53, performs process processing, and provides the processed substrate W to second transfer robot 53. The process processing performed in each processing chamber 60 may be different from each other.

[0068] The substrate processing apparatus 1000, which performs a plasma process in the processing chamber 60, will be described in detail below. Furthermore, the substrate processing apparatus 1000 described below will be illustrated by an example configured to perform a plasma processing process on the edge region of a substrate in the processing chamber 60. However, the present invention is not limited thereto, and the substrate processing apparatus 1000 described below can be applied in the same or similar manner to various chambers for processing substrates. Additionally, the substrate processing apparatus 1000 can be applied in the same or similar manner to various chambers for performing plasma processing processes on substrates.

[0069] Figure 2 It shows the setting Figure 1 A figure shows an embodiment of a substrate processing apparatus in a processing chamber. (Refer to...) Figure 2The substrate processing apparatus 1000, located in the processing chamber 60, performs a predetermined process on the substrate W using plasma. As an example, the substrate processing apparatus 1000 can etch or ashed a film on the substrate W. The film can be various types of films, such as polycrystalline silicon films, silicon oxide films, and silicon nitride films. Furthermore, the film can be a natural oxide film or a chemically generated oxide film. Additionally, the film can be a by-product generated during the processing of the substrate W. Furthermore, the film can be impurities adhering to and / or remaining on the substrate W.

[0070] The substrate processing apparatus 1000 can perform a plasma process on the substrate W. For example, the substrate processing apparatus 1000 can supply process gas and generate plasma from the supplied process gas to process the substrate W. The substrate processing apparatus 1000 can supply process gas and generate plasma from the supplied process gas to process the edge region of the substrate W. In the following description, the substrate processing apparatus 1000 will be described using a bevel etching apparatus for performing etching processing on the edge region of the substrate W as an example.

[0071] The substrate processing apparatus 1000 may include a housing 100, interval measurement units 210 and 220, a support unit 300, a dielectric plate unit 500, an upper electrode unit 600, a temperature regulating plate 700, a gas supply unit 800, and a controller 900.

[0072] The interior of the housing 100 may have a processing space 102. An opening (not shown) may be formed on one side of the housing 100. The substrate W can be moved into or out of the processing space 102 of the housing 100 through the opening formed in the housing 100. The opening can be opened and closed by an opening and closing member such as a door (not shown). When the opening of the housing 100 is opened and closed by the opening and closing member, the processing space 102 of the housing 100 can be isolated from the outside. In addition, after isolation from the outside, the atmosphere of the processing space 102 of the housing 100 can be adjusted to a low pressure close to a vacuum. In addition, the housing 100 may be made of a material including metal. In addition, the surface of the housing 100 may be coated with an insulating material.

[0073] Alternatively, the housing 100 can be a vacuum chamber. For example, an exhaust port 104 can be formed on the bottom surface of the housing 100. The plasma P generated in the processing space 212 or the gases G1 and G2 supplied to the processing space 212 can be discharged to the outside through the exhaust port 104. In addition, byproducts generated during the processing of the substrate W using plasma P can be discharged to the outside through the exhaust port 104. Furthermore, the exhaust port 104 can be connected to an exhaust line (not shown). The exhaust line can be connected to a pressure-reducing member that provides pressure reduction. The pressure-reducing member can provide pressure reduction to the processing space 102 through the exhaust line.

[0074] Additionally, the housing 100 may include an observation port 106. The observation port 106 may be made of a transparent material, allowing the operator to visually inspect the processing space 102 of the housing 100, or allowing light L irradiated by the irradiation unit 210 (described later) to pass through. The observation port 106 may be provided on a side wall of the housing 100. A pair of observation ports 106 may be provided opposite each other. Furthermore, the observation port 106 may be positioned at a height lower than the bottom surface of the dielectric plate 520 (described later) and higher than the top surface of the chuck 310.

[0075] The spacing measurement units 210 and 220 can measure the spacing between the dielectric plate 520 and the substrate W. Additionally, the spacing measurement units 210 and 220 can measure the spacing between the dielectric plate 520 and the chuck 310. For example, the spacing measurement units 210 and 220 can measure the spacing between the bottom surface of the dielectric plate 520 and the top surface of the substrate W. Furthermore, the spacing measurement units 210 and 220 can measure the spacing between the bottom surface of the dielectric plate 520 and the top surface of the chuck 310.

[0076] When the substrate W is placed on the lifting pin 390 (described later), the gap measuring units 210 and 220 can measure the gap between the top surface of the substrate W placed on the lifting pin 390 and the bottom surface of the dielectric plate 520. When the substrate W is not placed on the lifting pin 390 (described later), the gap measuring units 210 and 220 can measure the gap between the top surface of the chuck 310 and the bottom surface of the dielectric plate 520. The gap measuring units 210 and 220 can be gap sensors. For example, the gap measuring units 210 and 220 can be gap sensors that use LED light L to measure the gap.

[0077] The interval measurement units 210 and 220 may include an illumination unit 210 and a light receiving unit 220. The illumination unit 210 can illuminate light L. The light receiving unit 220 can receive the light L illuminated by the illumination unit 210. The light receiving unit 220 may be arranged on the travel path of the light L illuminated by the illumination unit 210. In addition, the illumination unit 210 and the light receiving unit 220 may be mounted on the aforementioned observation port 106. For example, the illumination unit 210 may be mounted on either of the pair of observation ports 106, and the light receiving unit 220 may be mounted on the other of the pair of observation ports 106. That is, the light L illuminated by the illumination unit 210 through either of the pair of observation ports 106 into the processing space 102 may be transmitted to the light receiving unit 220 through the other of the pair of observation ports 106.

[0078] The support unit 300 can support the substrate W in the processing space 102. The support unit 300 may include a chuck 310, a power supply component 320, an insulating ring 330, a lower electrode 350, a drive component 370, and a lifting pin 390.

[0079] The chuck 310 can support the substrate W in the processing space 102. The chuck 310 can have a support surface for supporting the substrate W. When viewed from above, the chuck 310 can have a circular shape. When viewed from above, the chuck 310 can have a diameter smaller than that of the substrate W. Therefore, the central region of the substrate W supported by the chuck 310 can be placed on the support surface of the chuck 310, and the edge region of the substrate W can be kept out of contact with the support surface of the chuck 310.

[0080] A heating unit (not shown) may be provided inside the chuck 310. The heating unit (not shown) can heat the chuck 310. The heating unit may be a heater. Additionally, a cooling flow path 312 may be formed in the chuck 310. The cooling flow path 312 may be formed inside the chuck 310. The cooling flow path 312 may be connected to a cooling fluid supply line 314 and a cooling fluid discharge line 316. The cooling fluid supply line 314 may be connected to a cooling fluid supply source 318. The cooling fluid supply source 318 may store cooling fluid and / or supply cooling fluid to the cooling fluid supply line 314. Furthermore, the cooling fluid supplied to the cooling flow path 312 may be discharged to the outside through the cooling fluid discharge line 316. The cooling fluid stored and / or supplied by the cooling fluid supply source 318 may be cooling water or cooling gas. Furthermore, the shape of the cooling flow path 312 formed in the chuck 310 is not limited to... Figure 3 The shape shown can be modified in various ways. In addition, the configuration for cooling the chuck 310 is not limited to the configuration for supplying cooling fluid, and can be provided in various configurations (e.g., cooling plates, etc.) capable of cooling the chuck 310.

[0081] Power supply component 320 can supply power to chuck 310. Power supply component 320 may include power supply 322, matching device 324, and power line 326. Power supply 322 may be a bias power supply. Alternatively, power supply 322 may be an RF power supply. Power supply 322 may be connected to chuck 310 via power line 326. Additionally, matching device 324 may be disposed in power line 326 to perform impedance matching.

[0082] When viewed from above, the insulating ring 330 can be configured to have a ring shape. When viewed from above, the insulating ring 330 can be configured to surround the chuck 310. For example, the insulating ring 330 can have a ring shape. Furthermore, the insulating ring 330 can be formed as a stepped structure where the top surface height of the inner region and the top surface height of the outer region are different from each other. For example, it can be formed as a stepped structure where the top surface height of the inner region of the insulating ring 330 is higher than the top surface height of the outer region. When the substrate W is placed on the support surface of the chuck 310, the top surface of the inner region of the insulating ring 330 can contact the bottom surface of the substrate W. Additionally, when the substrate W is placed on the support surface of the chuck 310, the top surface of the outer region of the insulating ring 330 can be spaced apart from the bottom surface of the substrate W. The insulating ring 330 can be disposed between the chuck 310 and the lower electrode 350, which will be described later. Since a bias power supply is applied to the chuck 310, an insulating ring 330 can be provided between the chuck 310 and the lower electrode 350 (described later). The insulating ring 330 can be made of an insulating material.

[0083] The lower electrode 350 can be disposed below the edge region of the substrate W supported by the chuck 310. When viewed from above, the lower electrode 350 can be configured to have a ring shape. When viewed from above, the lower electrode 350 can be configured to surround the insulating ring 330. The top surface of the lower electrode 350 can be disposed at the same height as the outer top surface of the insulating ring 330. The bottom surface of the lower electrode 350 can be disposed at the same height as the bottom surface of the insulating ring 330. In addition, the top surface of the lower electrode 350 can be disposed below the top surface of the central portion of the chuck 310. Furthermore, the lower electrode 350 can be configured to be spaced apart from the bottom surface of the substrate W supported by the chuck 310. For example, the lower electrode 350 can be configured to be spaced apart from the bottom surface of the edge region of the substrate W supported by the chuck 310.

[0084] The lower electrode 350 can be configured opposite to the upper electrode 620 described later. The lower electrode 350 can be located below the upper electrode 620. The lower electrode 350 can be grounded. The lower electrode 350 can couple the bias power supply applied to the chuck 310 to increase the plasma density. Therefore, the processing efficiency of the edge region of the substrate W can be improved.

[0085] The drive component 370 can raise and lower the chuck 310. The drive component 370 may include a driver 372 and a shaft 374. The shaft 374 may be coupled to the chuck 310. The shaft 374 may be connected to the driver 372. The driver 372 may use the shaft 374 as a medium to raise and lower the chuck 310 in the vertical direction.

[0086] The lifting pin 390 can move the substrate W in the vertical direction. The lifting pin 390 can be moved in the vertical direction by a separate driver (not shown). The lifting pin 390 can also be moved in the vertical direction through a pin hole (not shown) formed in the chuck 310. Alternatively, multiple lifting pins 390 can be provided. For example, multiple lifting pins 390 can be provided to support the substrate W at different positions on the bottom surface of the substrate W and to raise and lower the substrate W.

[0087] The dielectric plate unit 500 may include a dielectric plate 520 and a first substrate 510. Additionally, the dielectric plate unit 500 may be integrated with the temperature regulating plate 700, which will be described later.

[0088] The dielectric plate 520 can be configured such that its bottom surface faces the top surface of the chuck 310. When viewed from above, the dielectric plate 520 can have a circular shape. Furthermore, the top surface of the dielectric plate 520 can be stepped, with the height of its central region higher than the height of its edge regions. Additionally, the bottom surface of the dielectric plate 520 can be flat. The dielectric plate 520 can be configured to face the substrate W supported by the support unit 300 in the processing space 102. The dielectric plate 520 can be positioned above the support unit 300. The dielectric plate 520 can be made of a material including ceramic. A gas flow path connected to the first gas supply section 810 of the gas supply unit 800 (described later) can be formed in the dielectric plate 520. Furthermore, the outlet end of the gas flow path can be configured to supply the first gas G1 supplied by the first gas supply section 810 to the central region of the substrate W supported by the support unit 300. In addition, the outlet end of the gas flow path can be configured to supply the first gas G1 to the top surface of the central region of the substrate W supported by the support unit 300.

[0089] The first substrate 510 may be disposed between the dielectric plate 520 and the temperature regulating plate 700 (described later). The first substrate 510 may be coupled to the temperature regulating plate 700 (described later), and the dielectric plate 520 may be coupled to the first substrate 510. Therefore, the dielectric plate 520 can use the first substrate 510 as a medium to bond with the temperature regulating plate 700.

[0090] The diameter of the first substrate 510 can gradually increase from top to bottom. The top surface of the first substrate 510 can have a smaller diameter than the bottom surface of the dielectric plate 520. The top surface of the first substrate 510 can have a flat shape. Additionally, the bottom surface of the first substrate 510 can have a stepped shape. For example, the bottom surface of the edge region of the first substrate 510 can be formed in a stepped shape, with its height lower than the bottom surface of the central region. Furthermore, the bottom surface of the first substrate 510 and the top surface of the dielectric plate 520 can have shapes that allow them to be combined with each other. For example, the central region of the dielectric plate 520 can be inserted into the central region of the first substrate 510. Furthermore, the first substrate 510 can be made of a material including metal. For example, the first substrate 510 can be made of a material including aluminum.

[0091] The upper electrode unit 600 may include a second substrate 610 and an upper electrode 620. Additionally, the upper electrode unit 600 may be integrated with the temperature control plate 700, which will be described later.

[0092] The upper electrode 620 may be opposite to the lower electrode 350. The upper electrode 620 may be disposed above the lower electrode 350. The upper electrode 620 may be disposed above the edge region of the substrate W supported by the chuck 310. The upper electrode 620 may be grounded.

[0093] When viewed from above, the upper electrode 620 may have a shape surrounding the dielectric plate 520. The upper electrode 620 may be configured to be spaced apart from the dielectric plate 520. The upper electrode 620 may be spaced apart from the dielectric plate 520 to form a separation space. This separation space may form part of a gas channel through which the second gas G2 supplied by the second gas supply unit 830 (described later) flows. The outlet end of the gas channel may be configured to supply the second gas G2 to the edge region of the substrate W supported by the support unit 300. Additionally, the outlet end of the gas channel may be configured to supply the second gas G2 to the top surface of the edge region of the substrate W supported by the support unit 300.

[0094] The second substrate 610 can be disposed between the upper electrode 620 and the temperature regulating plate 700 (described later). The second substrate 610 can be coupled to the temperature regulating plate 700 (described later), and the upper electrode 620 can be coupled to the second substrate 610. Therefore, the upper electrode 620 can use the second substrate 610 as a medium to connect with the temperature regulating plate 700.

[0095] When viewed from above, the second base 610 may have an annular shape. The top and bottom surfaces of the second base 610 may have flat shapes. When viewed from above, the second base 610 may have a shape surrounding the first base 510. The inner diameter of the second base 610 may gradually increase from top to bottom. The second base 610 may be configured to be spaced apart from the first base 510. The second base 610 may be spaced apart from the first base 510 to form a separation space. The separation space may form part of a gas passage through which the second gas G2 supplied by the second gas supply unit 830 (described later) flows. Furthermore, the second base 610 may be made of a material including metal. For example, the second base 610 may be made of a material including aluminum.

[0096] The temperature regulating plate 700 can be combined with the dielectric plate unit 500 and the upper electrode unit 600. The temperature regulating plate 700 can be mounted on the housing 100. The temperature regulating plate 700 can generate energy. For example, the temperature regulating plate 700 can generate heat or cold. The temperature regulating plate 700 can receive signals from the controller 900 (described later) and generate energy. The temperature regulating plate 700 can generate heat or cold to control the temperature of the dielectric plate unit 500 and the upper electrode unit 600 to remain relatively constant. For example, the temperature regulating plate 700 can generate cold to minimize excessive temperature rise of the dielectric plate unit 500 and the upper electrode unit 600 during substrate W processing.

[0097] The gas supply unit 800 can supply gas to the processing space 102. The gas supply unit 800 can supply a first gas G1 and a second gas G2 to the processing space 102. The gas supply unit 800 may include a first gas supply section 810 and a second gas supply section 830.

[0098] The first gas supply unit 810 can supply a first gas G1 to the processing space 102. The first gas G1 can be an inert gas such as nitrogen. The first gas supply unit 810 can supply the first gas G1 to the central region of the substrate W supported by the chuck 310. The first gas supply unit 810 may include a first gas supply source 812, a first gas supply line 814, and a first valve 816. The first gas supply source 812 can store the first gas G1 and / or supply the first gas G1 to the first gas supply line 814. The first gas supply line 814 can be connected to a flow path formed in the dielectric plate 520. The first valve 816 can be installed in the first gas supply line 814. The first valve 816 can be provided as a switching valve or a flow regulating valve. The first gas G1 supplied by the first gas supply source 812 can be supplied to the central region of the top surface of the substrate W through the flow path formed in the dielectric plate 520.

[0099] The second gas supply unit 830 can supply the second gas G2 to the processing space 102. The second gas G2 can be a process gas excited into a plasma state. A gas channel is formed by the dielectric plate 520, the first substrate 510, the upper electrode 620, and the second substrate 610, all disposed on the upper edge region of the substrate W supported by the chuck 310, spaced apart from each other. The second gas supply unit 830 can supply the second gas G2 to the edge region of the substrate W through this gas channel. The second gas supply unit 830 can include a second gas supply source 832, a second gas supply line 834, and a second valve 836. The second gas supply source 832 can store the second gas G2 and / or supply the second gas G2 to the second gas supply line 834. The second gas supply line 834 can supply the second gas G2 to the spaced space serving as a gas channel. The second valve 836 can be installed in the second gas supply line 834. The second valve 836 can be provided as a switching valve or a flow regulating valve. The second gas G2 supplied by the second gas supply source 832 can be supplied to the top edge region of the substrate W through the second flow path 602.

[0100] The controller 900 can control the substrate processing apparatus 1000. The controller 900 can control the substrate processing apparatus 1000 to perform the plasma processing steps performed below. For example, the controller 900 can control the gas supply unit 800, the temperature regulating plate 700, and the support unit 300. For example, the controller 900 can control the support unit 300 and the gas supply unit 800 such that when gas is supplied from the first gas supply unit 810 and / or the second gas supply unit 830, the power supply 322 applies power to the chuck 310, thereby generating plasma P in the edge region of the substrate W supported by the chuck 310.

[0101] Figure 3 It is shown Figure 2 A diagram showing an embodiment of a substrate processing apparatus performing a plasma processing step. (Refer to...) Figure 3According to an embodiment of the present invention, a substrate processing apparatus 1000 can process the edge region of a substrate W. For example, the substrate processing apparatus 1000 can generate plasma P in the edge region of the substrate W to process the edge region of the substrate W. For example, the substrate processing apparatus 1000 can perform a bevel etching process to process the edge region of the substrate W. In the substrate processing apparatus 1000, when processing the edge region of the substrate W, a first gas supply unit 810 can supply a first gas G1 to the central region of the substrate W, and a second gas supply unit 830 can supply a second gas G2 to the edge region of the substrate W. Since the second gas G2 supplied by the second gas supply unit 830 is a process gas, it can be excited into a plasma P state to process the edge region of the substrate W. For example, the thin film on the edge region of the substrate W can be etched by plasma P. In addition, since the first gas G1 supplied to the central region of the substrate W is an inert gas, and the first gas G1 prevents the second gas G2 from flowing into the central region of the substrate W, the processing efficiency of the edge region of the substrate W can be further improved. In addition, the temperature regulating plate 700 can generate cooling to suppress excessive temperature rise of the dielectric plate unit 500 and the upper electrode unit 600 during the processing of the substrate W.

[0102] According to one embodiment of the present invention, a first substrate 510 is disposed between a dielectric plate 520 and a temperature regulating plate 700. The first substrate 510 may be made of a different material than the dielectric plate 520, or it may be made of the same material as the temperature regulating plate 700. That is, the thermal expansion rate of the first substrate 510 may be closer to that of the temperature regulating plate 700 than that of the dielectric plate 520. In other words, since the first substrate 510 is disposed between the dielectric plate 520 and the temperature regulating plate 700, warping between the temperature regulating plate 700 and the dielectric plate 520 due to cooling generated by the temperature regulating plate 700 can be minimized. This is because the first substrate 510, which is in direct contact with the temperature regulating plate 700, is made of a material similar to that of the temperature regulating plate 700.

[0103] Similarly, according to one embodiment of the present invention, a second substrate 610 is disposed between the upper electrode 620 and the temperature regulating plate 700. The second substrate 610 may be made of a different material than the upper electrode 620, or it may be made of the same material as the temperature regulating plate 700. That is, the thermal expansion rate of the second substrate 610 may be closer to the thermal expansion rate of the temperature regulating plate 700 than that of the upper electrode 620. In other words, since the second substrate 610 is disposed between the upper electrode 620 and the temperature regulating plate 700, warping between the temperature regulating plate 700 and the upper electrode 620 due to cooling generated by the temperature regulating plate 700 can be minimized. This is because the second substrate 610, which is in direct contact with the temperature regulating plate 700, is made of a material similar to that of the temperature regulating plate 700.

[0104] The substrate handling method of the present invention will be described below. The controller 900 can control the substrate handling apparatus 1000 to perform the substrate handling method described below. For example, the controller 900 can control the interval measuring units 210, 220, the support unit 300, and the second transfer robot 53 to perform the substrate handling method described below.

[0105] Figure 4 This is a flowchart illustrating a substrate handling method according to an embodiment of the present invention. For example, Figure 4 The transport sequence for moving the substrate W into the processing space 102 of the housing 100 is shown. (Refer to...) Figure 4 When the substrate W is placed into the processing space 102 of the housing 100 (S11), the support unit 300 can raise the lifting pin 390. Furthermore, the interval measurement units 210 and 220 can measure the interval D while the lifting pin 390 is raised (S12). As described above, when the substrate W is placed on the lifting pin 390, the interval measurement units 210 and 220 measure the interval D between the top surface of the substrate W placed on the lifting pin 390 and the dielectric plate 520. Additionally, when the substrate W is not placed on the lifting pin 390, the interval measurement units 210 and 220 measure the interval between the top surface of the chuck 310 and the bottom surface of the dielectric plate 520. The interval measurement units 210 and 220 can transmit the measured interval D value to the controller 900.

[0106] Additionally, the controller 900 can store an upper limit setting (UL) and a lower limit setting (LL). The upper limit setting (UL) can be a value with a first interval from the bottom surface of the dielectric plate 520. The lower limit setting (LL) can be a value with a second interval from the bottom surface of the dielectric plate 520. The second interval can be a smaller interval than the first interval.

[0107] The controller 900 can compare the received interval D with the upper limit setting value UL, or compare the interval D with the lower limit setting value LL, to determine whether the substrate W is placed on the lifting pin 390, or to determine whether the substrate W exists in the processing space 102, thereby determining whether to move the substrate W in (S13).

[0108] For example, such as Figure 5 As shown, when the substrate W is not placed on the lifting pin 390, the interval D measured by the interval measuring units 210 and 220 can be the interval between the bottom surface of the dielectric plate 520 and the top surface of the chuck 310. At this time, the interval D measured by the interval measuring units 210 and 220 can be greater than the upper limit setting value UL. In this case, the controller 900 can determine that the substrate W is not placed on the lifting pin 390, or determine that the substrate W does not exist in the processing space 102, so that the second transfer robot 53 can put the substrate W into the processing space 102 (S14-1).

[0109] On the contrary, such as Figure 6 As shown, when the substrate W is placed on the lifting pin 390, the interval D measured by the interval measuring units 210 and 220 can be the interval between the bottom surface of the dielectric plate 520 and the top surface of the substrate W placed on the lifting pin 390. At this time, the interval D measured by the interval measuring units 210 and 220 can be less than the upper limit setting value UL. In this case, the controller 390 can determine that the substrate W is placed on the lifting pin 390, or determine that the substrate W exists in the processing space 102. In this case, even if the substrate W exists in the processing space 102, it is determined that the substrate W loading sequence has been started, and the controller 900 controls the substrate processing device to generate an interlock to stop the operation of the substrate processing device (S14-2).

[0110] Subsequently, when the removal of substrate W from processing space 102 is completed or an interlock occurs, controller 900 may terminate the substrate handling sequence (S15).

[0111] Figure 7 This is a flowchart illustrating a substrate handling method according to another embodiment of the present invention. For example, Figure 7 The transport sequence for removing the substrate W from the processing space 102 of the housing 100 is shown. (Refer to...) Figure 7When the substrate W begins to be retracted from the processing space 102 of the housing 100 (S21), the support unit 300 can raise the lifting pin 390. Furthermore, the interval measurement units 210 and 220 can measure the interval D while the lifting pin 390 is raised (S22). As described above, when the substrate W is placed on the lifting pin 390, the interval measurement units 210 and 220 measure the interval D between the top surface of the substrate W placed on the lifting pin 390 and the dielectric plate 520. The interval measurement units 210 and 220 can transmit the measured value of the interval D to the controller 900.

[0112] The controller 900 can compare the received interval D with the upper limit setting value UL, or compare the interval D with the lower limit setting value LL, to determine whether the substrate W is in a state suitable for being moved out by the second transfer robot 53 (S23).

[0113] For example, such as Figure 8 As shown, when the substrate W is in a state suitable for being moved out by the second transfer robot 53, the interval D measured by the interval measurement units 210 and 220 can be less than the upper limit setting value UL and greater than the lower limit setting value LL. In this case, the controller 900 can determine that the substrate W is in a state suitable for being moved out, so that the second transfer robot 53 can retrieve the substrate W from the processing space 102 (S24-1).

[0114] On the contrary, such as Figure 9 As shown, when the substrate W is in a state unsuitable for being moved out by the second transfer robot 53, the intervals D1 and D2 measured by the interval measurement units 210 and 220 may be greater than the upper limit setting value UL or less than the lower limit setting value LL. For example, due to wear of the lifting pin 390 or damage to the driver used to lift the lifting pin 390, the substrate W placed on the lifting pin 390 may be in a tilted state. In this case, the interval D1 measured by the interval measurement units 210 and 220 may be less than the lower limit setting value LL. In addition, the interval D2 measured by the interval measurement units 210 and 220 may be greater than the upper limit setting value UL. In this case, even if the substrate W is in a state unsuitable for being moved out of the processing space 102, it is determined that the substrate W removal sequence has been started, and the controller 900 controls the substrate processing device to generate an interlock to stop the operation of the substrate processing device (S24-2).

[0115] Subsequently, when the removal of substrate W from processing space 102 is completed or an interlock occurs, controller 900 may terminate the substrate handling sequence (S25).

[0116] According to the substrate handling method of the present invention, the lifting pin 390 can be raised, and the interval D from the bottom surface of the dielectric plate 520 to the top surface of the chuck 310 or from the bottom surface of the dielectric plate 520 to the top surface of the substrate W placed on the lifting pin 390 can be measured. Furthermore, the measured interval D can be compared with an upper limit setting value UL and / or a lower limit setting value LL to determine whether the substrate W should be moved into or out of the processing space 102. That is, according to the substrate handling method of the present invention, since the lifting pin 390 is raised and the interval is measured by the interval measuring units 210 and 220 in the raised state, it is possible to determine whether the substrate W exists in the processing space 102 when it is moved in, and whether the substrate W has been raised to an appropriate height when it is moved out. Therefore, during the process of moving the substrate W in / out, the problem of collision between the substrate W or the hand of the second handling robot 53 and the substrate handling apparatus 1000 can be minimized. Therefore, the substrate W can be handled efficiently.

[0117] In the above example, the description focuses on a pair of observation ports 106 with an irradiation unit 210 and a light receiving unit 220 mounted on each port 106. However, the present invention is not limited to this. For example, two pairs of observation ports 106 may be provided. Furthermore, multiple interval measurement units 210 and 220 may be provided. Any one of the interval measurement units 210 and 220 may be mounted on a pair of observation ports 106, and the other of the interval measurement units 210 and 220 may be mounted on another pair of observation ports 106. Additionally, when viewed from above, the path of light irradiated by any one of the irradiation units 210 and 220 and the path of light irradiated by the other irradiation unit 210 may be set to be perpendicular.

[0118] Additionally, the controller 900 can determine whether to move the substrate W in or out by considering all intervals D measured by the multiple interval measurement units 210 and 220. When moving the substrate W in, if all intervals D measured by the multiple interval measurement units 210 and 220 are greater than the upper limit setting value UL, it can be determined that the substrate W is not in the processing space 102. Conversely, if any one of the intervals D measured by the multiple interval measurement units 210 and 220 is greater than the upper limit setting value UL when moving the substrate W in, it can be determined that the substrate W is present in the processing space 102.

[0119] Furthermore, when the interval D measured by the multiple interval measurement units 210 and 220 during the removal of substrate W is less than the upper limit setting value UL and greater than the lower limit setting value LL, it can be determined that substrate W has been raised to a suitable height for removal. Conversely, when any one of the intervals D measured by the multiple interval measurement units 210 and 220 during the removal of substrate W is less than the upper limit setting value UL and greater than the lower limit setting value LL, it can be determined that substrate W has been raised to a height unsuitable for removal.

[0120] That is, according to another embodiment of the present invention, since all intervals D measured by the multiple interval measurement units 210, 220 are taken into account to determine whether to move the substrate W in / out, the risk of collision between the second transfer robot 53 and the lifting pin 390 or between the second transfer robot 53 and the substrate W can be reduced more reliably when moving the substrate W.

[0121] The method for generating plasma P by the substrate processing apparatus 1000 described in the above example can be an inductively coupled plasma (ICP) method. Alternatively, the method for generating plasma P by the substrate processing apparatus 1000 can be a capacitively coupled plasma (CCP) method. Furthermore, the substrate processing apparatus 1000 can use both ICP and CCP methods, or a method selected from ICP and CCP methods, to generate plasma P. In addition to the methods described above, the substrate processing apparatus 1000 can also process the edge region of the substrate W using known methods for generating plasma P.

[0122] The above detailed description is an exemplary illustration of the present invention. Furthermore, while the above description illustrates and describes preferred embodiments of the invention, the invention can be used in various other combinations, modifications, and environments. That is, changes or modifications can be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed content, and / or the scope of technology or knowledge in the art. The above embodiments describe the optimal state for implementing the technical idea of ​​the invention, and various changes may be required in specific application areas and uses of the invention. Therefore, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Additionally, the appended claims should be interpreted to include other embodiments.

Claims

1. A substrate processing apparatus, wherein, include: The casing has a processing space; A transfer robot moves the substrate into or out of the processing space. The support unit has a chuck for supporting the substrate in the processing space and a lifting pin for moving the substrate in the vertical direction. A dielectric plate, configured such that its bottom surface faces the top surface of the chuck; An interval measuring unit measures the interval between the dielectric plate and the substrate supported by the lifting pin, or the interval between the dielectric plate and the chuck. as well as The controller controls the support unit and the interval measuring unit to raise the lifting pin, and measures the interval while the lifting pin is raised. The controller stores a first upper limit setting value for the distance from the bottom surface of the dielectric plate and / or a second lower limit setting value for the distance from the bottom surface of the dielectric plate that is less than the first interval. The controller compares the measured interval with the upper limit setting and / or the lower limit setting to determine whether to move the substrate into or out of the processing space.

2. The substrate processing apparatus according to claim 1, wherein, The interval measurement unit includes: Irradiation section, used for irradiating light; and A light receiving unit is disposed in the path of the light and receives the light.

3. The substrate processing apparatus according to claim 2, wherein, The housing includes a pair of observation ports arranged opposite each other. The irradiation unit is installed on either of the pair of observation ports. The light receiver is mounted on the other of the pair of observation ports.

4. The substrate processing apparatus according to claim 2, wherein, Multiple interval measurement units are provided. When viewed from above, the path of light illuminated by the irradiation section of any one of the plurality of interval measuring units is perpendicular to the path of light illuminated by the irradiation section of another of the plurality of interval measuring units.

5. The substrate processing apparatus according to claim 1, wherein, When the substrate is placed on the lifting pin, the interval measuring unit measures the interval between the top surface of the substrate and the bottom surface of the dielectric plate. When the substrate is not placed on the lifting pin, the interval measuring unit measures the interval between the top surface of the chuck and the bottom surface of the dielectric plate.

6. The substrate processing apparatus according to claim 1, wherein, The controller compares the interval with the upper limit setting value when moving the substrate into the processing space. When the interval is greater than the upper limit setting value, the controller controls the transfer robot to move the substrate into the processing space.

7. The substrate processing apparatus according to claim 1, wherein, The controller compares the interval with the upper limit setting value when moving the substrate into the processing space. When the interval is less than the upper limit setting value, the controller controls the substrate processing device to generate an interlock.

8. The substrate processing apparatus according to claim 1, wherein, The controller compares the interval with the upper limit setting value and the interval with the lower limit setting value when the substrate is removed from the processing space. When the interval is less than the upper limit setting value and greater than the lower limit setting value, the controller controls the transfer robot to remove the substrate from the processing space.

9. The substrate processing apparatus according to claim 1, wherein, The controller compares the interval with the upper limit setting value and the interval with the lower limit setting value when the substrate is removed from the processing space. When the interval is greater than the upper limit setting value or less than the lower limit setting value, the controller controls the substrate processing device to generate an interlock.

10. A substrate handling method, comprising using the substrate processing apparatus of claim 1 to handle a substrate, wherein, The lifting pin is raised, the interval is measured while the lifting pin is raised, and a determination is made based on the measured interval whether the substrate should be moved into or out of the processing space. The measured interval is compared with an upper limit setting of a first interval and / or a lower limit setting of a second interval less than the first interval at the distance from the bottom surface of the dielectric plate to determine whether to move the substrate into or out of the processing space.

11. The substrate handling method according to claim 10, wherein, When the substrate is moved into the processing space, the interval is compared with the upper limit setting value. When the interval is greater than the upper limit setting value, the substrate is moved into the processing space.

12. The substrate handling method according to claim 10, wherein, When the substrate is moved into the processing space, the interval is compared with the upper limit setting value. An interlock is generated when the interval is less than the upper limit setting value.

13. The substrate handling method according to claim 10, wherein, When the substrate is removed from the processing space, the interval is compared with the upper limit setting value and the interval is compared with the lower limit setting value. The substrate is removed from the processing space when the interval is less than the upper limit setting value and greater than the lower limit setting value.

14. The substrate handling method according to claim 10, wherein, When the substrate is removed from the processing space, the interval is compared with the upper limit setting value and the interval is compared with the lower limit setting value. An interlock is generated when the interval is greater than the upper limit setting value or less than the lower limit setting value.

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