用于半导体装置的引线键合
By employing non-circular spherical bonding and capillary distal openings in semiconductor devices, the problems of contact instability and insufficient strength of fine-pitch and ultra-fine-pitch bonding pads are solved, achieving higher bonding strength and current transmission capability.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SANDISK TECHNOLOGIES LLC
- Filing Date
- 2021-05-13
- Publication Date
- 2026-07-17
AI Technical Summary
As the capacity of semiconductor devices increases, the size and spacing of fine-pitch and ultra-fine-pitch bonding pads decrease, leading to increased defect risks and weakened bond strength in existing wire bonding processes. This is especially true when irregular spherical bonding can cause short circuits or reduced current.
The design employs a non-circular spherical bonding and a capillary distal opening. The non-circular distal opening of the capillary forms a spherical bonding with a symmetry axis, increasing the contact area and improving the bonding strength. The non-circular capillary tip is used to mold the spherical bonding into a specific geometry.
It improves bonding strength and current transport capability, reduces bonding defects, meets the connection requirements of fine-pitch and ultra-fine-pitch semiconductor devices, and maintains the compactness of the package.
Smart Images
Figure CN114078797B_ABST