显示设备
By using oxide semiconductor materials and designing steep contact hole structures in thin-film transistors, the problems of low mobility in amorphous silicon and non-uniform threshold voltage in polycrystalline silicon were solved, achieving high mobility and stable threshold voltage, thus improving the performance and reliability of display devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SAMSUNG DISPLAY CO LTD
- Filing Date
- 2021-08-09
- Publication Date
- 2026-07-17
AI Technical Summary
When amorphous silicon is used in the active layer of a thin-film transistor, the low charge mobility makes it difficult to achieve high-speed operation. When polycrystalline silicon is used, the threshold voltage is uneven and a compensation circuit is required.
Using oxide semiconductor material as the first semiconductor layer, the electrical connection of the thin film transistor is improved by designing a steep inner surface of the contact hole and the structure of the metal oxide layer. Combined with a polycrystalline silicon semiconductor layer, the mobility is improved and the threshold voltage is stabilized.
It achieves high mobility and stable threshold voltage, reduces power consumption, and improves the performance and reliability of display devices.
Smart Images
Figure CN114078919B_ABST