Fingerprint sensor and display device comprising the same

Abstract

A fingerprint sensor and a display device including the same are provided. The fingerprint sensor includes a substrate, a light sensing element including a sensing electrode disposed on the substrate, a semiconductor layer disposed on the sensing electrode, and a common electrode disposed on the semiconductor layer, a light-shielding conductive layer disposed on the common electrode and including a light transmission hole, and a light guide unit disposed on the light-shielding conductive layer.

Description

Technical Field

[0001] The present invention relates to a fingerprint sensor and a display device including the fingerprint sensor. Background Technology

[0002] Display devices are output devices used to present information in a visual form. They are used in various electronic devices such as smartphones, tablets, laptops, monitors, and televisions. The rapid development of mobile communication technology has greatly increased the use of portable electronic devices such as smartphones, tablets, and laptops. Portable electronic devices can store private information; in other words, they can store sensitive information. To protect the privacy information stored in portable electronic devices, biometric authentication can be used. For example, display devices may include fingerprint sensors to allow users to authenticate their fingerprints before accessing the portable electronic device.

[0003] Fingerprint sensors can be optical, ultrasonic, or capacitive. Optical fingerprint sensors may include a light-sensing element for sensing light and an optical layer for providing light to the light-sensing element and reducing noise in the light. To prevent optical fingerprint sensors from interfering with other components such as the battery of a display device, the thickness of the optical layer can be reduced.

[0004] As the thickness of the optical layer decreases, the distance between the signal lines of the display panel and the signal lines of the photosensitive layer of the fingerprint sensor also decreases. Therefore, the signal from the display panel's signal lines may interfere with the signal from the photosensitive layer's signal lines. For example, the scan signal of the display panel's scan lines may couple with the sensing signal of the photosensitive layer's sensing lines. In this case, noise in the display panel's scan signal may be reflected in the sensing signal of the photosensitive layer's sensing lines. Summary of the Invention

[0005] According to an embodiment of the present invention, a fingerprint sensor is provided, the fingerprint sensor comprising: a substrate; a light sensing element including a sensing electrode disposed on the substrate, a semiconductor layer disposed on the sensing electrode, and a common electrode disposed on the semiconductor layer; a light-shielding conductive layer disposed on the common electrode and including a light-transmitting hole; and a light-guiding unit disposed on the light-shielding conductive layer.

[0006] According to an embodiment of the present invention, a display device is provided, the display device comprising: a display panel for displaying an image; and a fingerprint sensor disposed on the surface of the display panel for sensing light passing through the display panel, wherein the fingerprint sensor comprises: a substrate; a light-sensing element comprising a sensing electrode disposed on the substrate and a common electrode disposed on the sensing electrode; a light-shielding conductive layer comprising a light-transmitting hole and disposed on the common electrode; and a light-guiding portion for guiding light to the light-sensing element and disposed on the light-shielding conductive layer.

[0007] According to an embodiment of the present invention, a fingerprint sensor is provided, the fingerprint sensor comprising: a substrate; a photosensitive element including a sensing electrode disposed on the substrate and a common electrode disposed on the sensing electrode; a light-shielding conductive layer including a light-transmitting hole and disposed on the common electrode; and a light-guiding portion guiding light and disposed on the light-shielding conductive layer, wherein the light guided by the light-guiding portion passes through at least one of the light-transmitting holes and is incident on the photosensitive element.

[0008] According to an embodiment of the present invention, a fingerprint sensor is provided, the fingerprint sensor comprising: a substrate; a sensing electrode disposed on the substrate and connected to a transistor; a common electrode disposed on the sensing electrode; a light-shielding conductive layer disposed on the common electrode; and a light-guiding unit disposed on the light-shielding conductive layer. Attached Figure Description

[0009] The above and other features of the present invention will become more apparent from the detailed description of embodiments of the present invention with reference to the accompanying drawings, in which:

[0010] Figure 1 This is a perspective view of a display device according to an embodiment of the concept of the present invention;

[0011] Figure 2 It is based on Figure 1 An exploded perspective view of the display device of an embodiment;

[0012] Figure 3 It is shown Figure 2 A cross-sectional view of an example of the cover window, display panel, fingerprint sensor, bracket, and battery;

[0013] Figure 4 It is shown Figure 2 A cross-sectional view of an example of the cover window, display panel, fingerprint sensor, bracket, and battery;

[0014] Figure 5 It shows Figure 4 The scan lines and data lines of the display panel and Figure 4 Examples of fingerprint scanning lines and sensing lines in a fingerprint sensor;

[0015] Figure 6 An example of a display panel, cover window, fingerprint sensor, and user's finger is shown;

[0016] Figure 7 An example of a display panel, cover window, fingerprint sensor, and user's finger is shown;

[0017] Figure 8 An example of a display panel, cover window, fingerprint sensor, and user's finger is shown;

[0018] Figure 9 It is along Figure 5 A cross-sectional view of an example display panel, taken by line I-I';

[0019] Figure 10 yes Figure 1 An exploded perspective view of an example fingerprint sensor;

[0020] Figure 11 This is a layout diagram of a fingerprint sensor according to an embodiment of the present invention;

[0021] Figure 12A This is a circuit diagram illustrating a sensor pixel according to an embodiment of the concept of the present invention;

[0022] Figure 12B This is a layout diagram illustrating the sensor pixels according to an embodiment of the concept of the present invention;

[0023] Figure 13 It is along Figure 12B A cross-sectional view of an example fingerprint sensor taken by line II-II';

[0024] Figure 14 It is along Figure 12B A cross-sectional view of an example fingerprint sensor taken by line II-II';

[0025] Figure 15 It is along Figure 12B A cross-sectional view of an example fingerprint sensor taken by line II-II';

[0026] Figure 16 It is along Figure 11 A cross-sectional view of an example fingerprint sensor taken by line III-III';

[0027] Figure 17 This is a layout diagram of a fingerprint sensor according to an embodiment of the present invention;

[0028] Figure 18 It is along Figure 12B A cross-sectional view of an example fingerprint sensor taken by line II-II';

[0029] Figure 19It is along Figure 12B A cross-sectional view of an example fingerprint sensor taken by line II-II';

[0030] Figure 20 It is along Figure 12B A cross-sectional view of an example fingerprint sensor taken along line II-II'; and

[0031] Figure 21 It is along Figure 17 A cross-sectional view of an example fingerprint sensor taken by line IV-IV'. Detailed Implementation

[0032] Embodiments of the inventive concept will be described more fully below with reference to the accompanying drawings. Throughout the specification and drawings, the same reference numerals may denote the same elements.

[0033] It will be understood that when a component (such as a membrane, region, layer, or element portion) is referred to as being "on," "connected to," "bonded to," or "adjacent to" another component, it can be directly on, directly connected to, directly bonded to, or directly adjacent to the other component, or there may be intermediate components present. It will also be understood that when a component is referred to as being "between" two components, it can be the only component between the two components, or there may be one or more intermediate components present. It will also be understood that when a component is referred to as "covering" another component, it can be the only component covering the other component, or one or more intermediate components may also cover the other component. Other terms used to describe relationships between elements can be interpreted in a similar manner.

[0034] It will also be understood that, unless the context explicitly states otherwise, the description of a feature or aspect within each embodiment can be used for other similar features or aspects in other embodiments. Therefore, all features and structures described herein can be mixed and matched in any desired manner.

[0035] As used herein, unless the context clearly indicates otherwise, the singular forms “a (kind)” and “the” are also intended to include the plural forms.

[0036] For ease of description, spatial relative terms such as “below,” “under,” “above,” and “above” may be used herein to describe the relationship between one element or feature and another, as shown in the accompanying drawings. It will be understood that, in addition to the orientation depicted in the drawings, the spatial relative terms are also intended to encompass different orientations of the device in use or operation. For example, if the device in the drawings is flipped, the element described as “below” another element or feature will subsequently be positioned “above” said other element or feature. Therefore, the term “below” can encompass both above and below orientations.

[0037] Figure 1 This is a perspective view of a display device 10 according to an embodiment of the present invention. Figure 2 It is based on Figure 1 An exploded perspective view of the display device 10 of the embodiment shown.

[0038] Reference Figure 1 and Figure 2 The display device 10 according to the given embodiments can be applied to portable electronic devices such as mobile phones, smartphones, tablet PCs, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation devices, and ultra-mobile PCs (UMPCs). Optionally, the display device 10 according to the given embodiments can be used as a display unit for televisions, laptop computers, monitors, billboards, or the Internet of Things (IoT). Optionally, the display device 10 according to the given embodiments can be applied to wearable devices such as smartwatches, watch phones, glasses-like displays, and head-mounted displays (HMDs). Optionally, the display device 10 according to the given embodiments can be applied to a vehicle's dashboard, a vehicle's central dashboard, a central information display (CID) mounted on a vehicle's dashboard, an interior mirror display replacing a vehicle's side mirrors, or a display mounted on the back of a front seat as an entertainment device for rear-seat passengers.

[0039] In this specification, the first direction (e.g., the X-axis direction) can be the direction of the short side of the display device 10, such as the horizontal direction of the display device 10. The second direction (e.g., the Y-axis direction) can be the direction of the long side of the display device 10, such as the vertical direction of the display device 10. The third direction (e.g., the Z-axis direction) can be the thickness direction of the display device 10.

[0040] The display device 10 can have a planar shape similar to a quadrilateral. For example, such as Figure 1As shown, the display device 10 may have a planar shape similar to a quadrilateral, the quadrilateral having a short side in a first direction (X-axis direction) and a long side in a second direction (Y-axis direction). Each corner where the short side extending in the first direction (X-axis direction) and the long side extending in the second direction (Y-axis direction) meet may be rounded with a predetermined curvature, or may be right-angled. The planar shape of the display device 10 is not limited to a quadrilateral shape, but may also be other polygonal shapes, circular shapes, or elliptical shapes.

[0041] The display device 10 may be flat. Alternatively, the display device 10 may be configured to bend the two facing sides. For example, the display device 10 may be configured to bend its left and right sides. Alternatively, the display device 10 may be configured to bend the top, bottom, left, and right sides.

[0042] The display device 10 according to the given embodiment includes a cover window 100, a display panel 300, a display circuit board 310, a display driving circuit 320, a fingerprint sensor 400, a bracket 600, a main circuit board 700, and a bottom cover 900.

[0043] A cover window 100 can be disposed on the display panel 300 to cover the front surface of the display panel 300. Therefore, the cover window 100 can protect the front surface of the display panel 300.

[0044] The cover window 100 may include a light-transmitting area DA100 corresponding to the display panel 300 and a light-blocking area NDA100 corresponding to the area outside the display panel 300. The light-blocking area NDA100 may be opaque. Optionally, the light-blocking area NDA100 may be a decorative layer having a pattern that can be shown to the user when no image is displayed.

[0045] The display panel 300 can be disposed below the cover window 100. The display panel 300 can be a light-emitting display panel that includes light-emitting elements. For example, the display panel 300 can be an organic light-emitting display panel using organic light-emitting diodes (OLEDs) including organic light-emitting layers, a micro light-emitting diode display panel using micro light-emitting diodes, a quantum dot light-emitting display panel using quantum dot light-emitting diodes including quantum dot light-emitting layers, or an inorganic light-emitting display panel using inorganic light-emitting elements that include inorganic semiconductors. The following will mainly describe the case where the display panel 300 is an organic light-emitting display panel.

[0046] The display panel 300 may include a main area MA and a sub-area SBA.

[0047] The main region MA may include a display area DA for displaying the image and a non-display area NDA surrounding the display area DA. The display area DA may include display pixels SP for displaying the image (see...). Figure 5The non-display area NDA can be an area extending from the outer side of the display area DA to the edge of the display panel 300.

[0048] The display area DA may include the fingerprint sensing area FSA. The fingerprint sensing area FSA indicates the area where the fingerprint sensor 400 is located. Figure 2 The illustration shows a portion of the display area DA, but the inventive concept is not limited thereto. The fingerprint sensing area FSA can also be the entire display area DA and have substantially the same size as the display area DA.

[0049] The sub-region SBA may protrude from one side of the main region MA in the second direction (Y-axis direction). The length of the sub-region SBA in the first direction (X-axis direction) may be smaller than the length of the main region MA in the first direction (X-axis direction), and the length of the sub-region SBA in the second direction (Y-axis direction) may be smaller than the length of the main region MA in the second direction (Y-axis direction), but the inventive concept is not limited thereto. For example, the length of the sub-region SBA in the first direction (X-axis direction) may be equal to the length of the main region MA in the first direction (X-axis direction).

[0050] Although subregion SBA is Figure 2 The sub-region SBA can be unfolded, but it can also be bent, in which case the sub-region SBA can be disposed on the lower surface of the display panel 300. When the sub-region SBA is bent, it can be stacked with the main region MA in the thickness direction (Z-axis direction). The display circuit board 310 and the display driving circuit 320 can be disposed in the sub-region SBA.

[0051] The display circuit board 310 can be attached to the end of a sub-region SBA of the display panel 300 using a conductive adhesive member such as an anisotropic conductive film. Therefore, the display circuit board 310 can be electrically connected to the display panel 300 and the display driving circuit 320. The display panel 300 and the display driving circuit 320 can receive digital video data, timing signals, and driving voltages through the display circuit board 310. The display circuit board 310 can be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip-on-film.

[0052] The display driving circuit 320 can generate signals and voltages for driving the display panel 300. The display driving circuit 320 can be an integrated circuit and is attached to a sub-region SBA of the display panel 300 using a chip-on-glass (COG) method, a chip-on-plastic (COP) method, or an ultrasonic bonding method. However, the inventive concept is not limited thereto. For example, the chip-on-film (COF) method can also be used to attach the display driving circuit 320 to the display circuit board 310.

[0053] The touch driving circuit 330 can be disposed on the display circuit board 310. Each of the touch driving circuit 330 and the pressure driving circuit can be formed as an integrated circuit and attached to the upper surface of the display circuit board 310. Alternatively, the touch driving circuit 330 and the pressure driving circuit can be integrated into a single integrated circuit.

[0054] The touch driving circuit 330 can be electrically connected to the touch electrodes of the touch electrode layer of the display panel 300 via the display circuit board 310. The display panel 300 may include a touch electrode layer having touch electrodes for sensing objects such as a human finger or a pen. The touch driving circuit 330 can output touch driving signals to the touch electrodes and sense the voltage charged in the capacitor of the touch electrodes.

[0055] The touch driving circuit 330 can generate touch data based on changes in electrical signals sensed at each point in the touch electrodes and transmit the touch data to the main processor 710. The main processor 710 can analyze the touch data to calculate the touch coordinates where the touch has occurred. Touch can include contact touch and proximity touch. Contact touch refers to the situation where an object such as a human finger or pen directly contacts the cover window 100 disposed on the touch electrode layer. Proximity touch refers to the situation where an object such as a human finger or pen is positioned (e.g., hovering) above the cover window 100 and close to it.

[0056] A power supply unit for supplying the display driving voltage for driving the display driving circuit 320 can be separately disposed on the display circuit board 310.

[0057] The fingerprint sensor 400 can be disposed on the lower surface of the display panel 300. The fingerprint sensor 400 can be attached to the lower surface of the display panel 300 using a transparent adhesive member. For example, the transparent adhesive member can be a transparent adhesive film such as an optically clear adhesive (OCA) film or a transparent adhesive resin such as an optically clear resin (OCR).

[0058] The bracket 600 can be disposed below the display panel 300. The bracket 600 may include plastic, metal, or both plastic and metal. The bracket 600 may include a first camera hole CMH1 into which a first camera sensor 720 is inserted, a battery hole BH in which a battery 790 is disposed, and a cable hole CAH through which a cable 314 connected to the display circuit board 310 passes.

[0059] The main circuit board 700 can be located below the bracket 600. The main circuit board 700 can be a printed circuit board or a flexible printed circuit board.

[0060] The main circuit board 700 may include a main processor 710, a first camera sensor 720, and a main connector 730. The first camera sensor 720 may be disposed on both the upper and lower surfaces of the main circuit board 700, the main processor 710 may be disposed on the upper surface of the main circuit board 700, and the main connector 730 may be disposed on the lower surface of the main circuit board 700.

[0061] The main processor 710 can control all functions of the display device 10. For example, the main processor 710 can output digital video data to the display driver circuit 320 via the display circuit board 310, enabling the display panel 300 to display images. Additionally, the main processor 710 can receive touch data from the touch driver circuit 330, determine the user's touch coordinates, and then run the application indicated by the icon displayed at the user's touch coordinates. Furthermore, the main processor 710 can convert first image data received from the first camera sensor 720 into digital video data and output the digital video data to the display driver circuit 320 via the display circuit board 310. Therefore, the image captured by the first camera sensor 720 can be displayed on the display panel 300.

[0062] The first camera sensor 720 processes image frames, such as still images or moving images, obtained from the image sensor and outputs the processed image frames to the main processor 710. The first camera sensor 720 may be a complementary metal-oxide-semiconductor (CMOS) image sensor or a charge-coupled device (CCD) sensor. The first camera sensor 720 is exposed on the lower surface of the bottom cover 900 through the second camera aperture CMH2. Therefore, the first camera sensor 720 can capture images of objects or backgrounds positioned below the display device 10.

[0063] Cable 314, passing through cable hole CAH in bracket 600, can be connected to main connector 730. Therefore, main circuit board 700 can be electrically connected to display circuit board 310.

[0064] The battery 790 can be configured not to stack with the main circuit board 700 in the third direction (Z-axis direction). The battery 790 can stack with the battery hole BH of the bracket 600. The battery 790 can be disposed within the battery hole BH of the bracket 600. Additionally, the fingerprint sensor 400 can stack with the battery hole BH of the bracket 600. The fingerprint sensor 400 can be stacked with or not stacked with the battery 790 within the battery hole BH of the bracket 600. This will be discussed later. Figure 3 and Figure 4 The description includes a fingerprint sensor 400 and a battery 790 housed in the battery hole BH of the bracket 600.

[0065] Additionally, the main circuit board 700 may also include a mobile communication module capable of transmitting wireless signals to at least one of a base station, an external terminal, and a server via a mobile communication network, and receiving wireless signals from at least one of the base station, an external terminal, and a server. The wireless signals may include voice signals, video call signals, or various types of data transmitted / received according to text / multimedia messages.

[0066] The bottom cover 900 can be disposed below the main circuit board 700 and the battery 790. The bottom cover 900 can be fastened and fixed to the bracket 600. The bottom cover 900 can form the bottom appearance of the display device 10. The bottom cover 900 can be made of plastic, metal, or both plastic and metal.

[0067] A second camera aperture CMH2, exposing the lower surface of the first camera sensor 720, can be formed in the bottom cover 900. The position of the first camera sensor 720 and the positions of the first camera aperture CMH1 and the second camera aperture CMH2 corresponding to the first camera sensor 720 are not limited to... Figure 2 The embodiment shown.

[0068] Figure 3 It is shown Figure 2 A cross-sectional view of an example of a cover window 100, a display panel 300, a fingerprint sensor 400, a bracket 600, and a battery 790. Figure 4 It is shown Figure 2 A cross-sectional view of an example of a cover window 100, a display panel 300, a fingerprint sensor 400, a bracket 600, and a battery 790.

[0069] Reference Figure 3 and Figure 4 The display panel 300 can be disposed on the lower surface of the cover window 100, and the fingerprint sensor 400 can be disposed on the lower surface of the display panel 300. The battery 790 can be disposed on the lower surface of the display panel 300. The fingerprint sensor 400 and the battery 790 can be disposed in the battery hole BH of the bracket 600.

[0070] like Figure 3As shown, the thickness TF of the fingerprint sensor 400 can be greater than the distance DPB between the display panel 300 and the battery 790. Additionally, the thickness TF of the fingerprint sensor 400 can be greater than the distance between the display panel 300 and the bracket 600. The distance DPB between the display panel 300 and the battery 790 can be the minimum distance between the display panel 300 and the battery 790 in the third direction (Z-axis direction). When the battery 790 and the fingerprint sensor 400 are stacked in the battery hole BH in the third direction (Z-axis direction), the battery 790 will interfere with the fingerprint sensor 400. Therefore, the battery 790 can be configured not to be stacked with the fingerprint sensor 400 in the third direction (Z-axis direction). In other words, when the battery 790 is placed in the battery hole BH, there may be limitations on the space in which the battery 790 is disposed.

[0071] like Figure 4 As shown, the thickness TF of the fingerprint sensor 400 can be smaller than the distance DPB between the display panel 300 and the battery 790. In this case, even if the battery 790 and the fingerprint sensor 400 are stacked in the third direction (Z-axis direction) within the battery hole BH, the battery 790 does not interfere with the fingerprint sensor 400. This is because, for example, a gap can exist between the fingerprint sensor 400 and the battery 790. Therefore, when the battery 790 is placed in the battery hole BH, there is no limitation on the space in which the battery 790 is disposed.

[0072] Figure 5 It shows Figure 4 The display panel has 300 scan lines (SL) and data lines (DL). Figure 4 Example of fingerprint scanning line RSL and sensing line RL of fingerprint sensor 400.

[0073] For ease of description, in Figure 5 The image only shows the display pixels SP, scan lines SL and data lines DL of the display panel 300, and the sensor pixels SEP, fingerprint scan lines RSL and sensing lines RL of the fingerprint sensor 400.

[0074] Reference Figure 5 The display pixels SP can be arranged in a matrix in a first direction (X-axis direction) and a second direction (Y-axis direction) that intersect each other. However, the arrangement of the display pixels SP is not limited to this and can vary depending on the size and shape of the display panel 300.

[0075] Scan lines SL can extend in a first direction (X-axis direction) and can be arranged in a second direction (Y-axis direction). Data lines DL can extend in the second direction (Y-axis direction) and can be arranged in the first direction (X-axis direction). Each of the display pixels SP can be superimposed with at least one scan line SL and at least one data line DL. Each of the display pixels SP can be connected to at least one scan line SL and at least one data line DL. Therefore, when a scan signal is transmitted to the scan line SL, each of the display pixels SP connected to the scan line SL can receive a data voltage from the data line DL connected to it. Each of these display pixels SP can emit light according to a drive current flowing based on the data voltage.

[0076] The sensor pixels (SEPs) of the fingerprint sensor 400 can be arranged in a matrix in a first direction (X-axis direction) and a second direction (Y-axis direction) that intersect each other. However, the arrangement of the sensor pixels (SEPs) is not limited to this and can vary depending on the size and shape of the fingerprint sensor 400.

[0077] The fingerprint scanning line RSL can extend in a first direction (X-axis direction) and can be arranged in a second direction (Y-axis direction). The sensing line RL can extend in the second direction (Y-axis direction) and can be arranged in the first direction (X-axis direction). Each of the sensor pixels SEP can be superimposed with at least one fingerprint scanning line RSL and at least one sensing line RL. Each of the sensor pixels SEP can be connected to at least one fingerprint scanning line RSL and at least one sensing line RL.

[0078] When the thickness TF of the fingerprint sensor 400 is smaller than the distance DPB between the display panel 300 and the battery 790, the distance between the scan line SL of the display panel 300 and the sensing line RL of the fingerprint sensor 400 can be small. Therefore, a parasitic capacitance Cp may exist between the scan line SL of the display panel 300 and the sensing line RL of the fingerprint sensor 400. Since the scan signals of the scan lines SL of the display panel 300 have a large swing width, they may couple with the sensing signals of the sensing lines RL of the fingerprint sensor 400 through the parasitic capacitance Cp. In other words, noise caused by the scan signals of the scan lines SL of the display panel 300 may be reflected in the sensing signals of the sensing lines RL of the fingerprint sensor 400 through the parasitic capacitance Cp.

[0079] Optionally, because the fingerprint scanning signals of the fingerprint scanning lines RSL of the fingerprint sensor 400 have a large swing width, they may couple with the scan signal of the scan line SL or the data voltage of the data line DL of the display panel 300 through the parasitic capacitance between the fingerprint scanning lines RSL and SL, or between the fingerprint scanning lines RSL and DL. In other words, noise caused by the fingerprint scanning signals of the fingerprint scanning lines RSL of the fingerprint sensor 400 may be reflected in the scan signal of the scan line SL or the data voltage of the data line DL of the display panel 300 through the parasitic capacitance between the fingerprint scanning lines RSL and SL, or between the fingerprint scanning lines RSL and DL.

[0080] Therefore, noise reflection can be reduced if the scanning signal of the scanning line SL of the display panel 300 and the sensing signal of the sensing line RL of the fingerprint sensor 400 can be prevented from interfering with each other due to parasitic capacitance Cp.

[0081] Figure 6 An example of a display panel 300, a cover window 100, a fingerprint sensor 400, and a user's finger F is shown.

[0082] exist Figure 6 The image shows a scenario where a user touches the cover window 100 of the display device 10 with his or her finger F for fingerprint recognition.

[0083] Reference Figure 6 The display device 10 also includes a cover window 100 disposed on the upper surface of the display panel 300. The cover window 100 can be disposed on the display panel 300 to cover the upper surface of the display panel 300. The cover window 100 can protect the upper surface of the display panel 300. The cover window 100 can be attached to the upper surface of the display panel 300 using a transparent adhesive member.

[0084] The cover window 100 can be made of a transparent material and can be glass or plastic. For example, when the cover window 100 is glass, it can be ultra-thin glass (UTG) with a thickness of 0.1 mm or less. When the cover window 100 is plastic, it can include a transparent polyimide film.

[0085] The fingerprint sensor 400 can be disposed on the lower surface of the display panel 300. The fingerprint sensor 400 can be attached to the lower surface of the display panel 300 using a transparent adhesive component.

[0086] The fingerprint sensor 400 may include a light-sensing layer 410 and a light-guiding unit 420. The light-sensing layer 410 includes sensor pixels (SEPs), and the light-guiding unit 420 is disposed on the light-sensing layer 410 and designed to provide or guide light to each of the sensor pixels (SEPs) in the light-sensing layer 410. Figure 6In one embodiment, the light guide unit 420 includes a lens array LA having a plurality of lenses.

[0087] Each of the sensor pixels (SEP) can be stacked with at least one lens in the lens array (LA) in a third direction (Z-axis direction), which is the thickness direction of the display panel 300 or the fingerprint sensor substrate (FSUB). Although in Figure 6 Each of the sensor pixel SEPs is stacked with three lens lenses in the third direction (Z-axis direction), but the number of lens lenses stacked with each of the sensor pixel SEPs in the third direction (Z-axis direction) is not limited to this. For example, each sensor pixel SEP can be stacked with fewer or more than three lens lenses. Each of the lens lenses can be shaped like a convex lens that bulges upwards. In other words, each of the lens lenses can bulge towards the display panel 300.

[0088] Light reflected by the fingerprint of finger F can be focused onto the sensor pixel SEP by the lens of the light guide unit 420. When the user's finger F touches the cover window 100, the light output from the display panel 300 can be reflected by the ridges (RID) and valleys (VAL) of the fingerprint of finger F. Here, the amount of light reflected by the ridges (RID) of the fingerprint of finger F can be different from the amount of light reflected by the valleys (VAL) of the fingerprint of finger F.

[0089] The range LR of light incident on each sensor pixel SEP through the lens LENS of the light guide unit 420 can be smaller than the distance FP between the ridge RID and valley VAL of the fingerprint of finger F. Since the amount of light reflected by the ridge RID of the fingerprint of finger F is different from the amount of light reflected by the valley VAL of the fingerprint of finger F, the sensing current flowing through the photosensitive element of each sensor pixel SEP can vary depending on whether the incident light is reflected by the ridge RID or the valley VAL of the fingerprint of finger F. Therefore, the sensing voltage output from each sensor pixel SEP can vary depending on whether the incident light is reflected by the ridge RID or the valley VAL of the fingerprint of finger F. Therefore, the sensor driving circuit 480 (see...) Figure 10 The fingerprint pattern of finger F can be identified based on the sensing voltage of the sensor pixel SEP.

[0090] Figure 7 An example of a display panel 300, a cover window 100, a fingerprint sensor 400, and a user's finger F is shown.

[0091] Figure 7 Implementation examples and Figure 6The difference in this embodiment is that the light guide unit 420 includes a collimator COM with a light transmission region OA and a light blocking region LSA, instead of a lens array LA. Figure 7 In the middle, the main description will be related to Figure 6 Differences in the implementation examples.

[0092] Reference Figure 7 The light-blocking region LSA can surround each light-transmitting region OA. In other words, the light-blocking region LSA can be positioned on opposite sides of the light-transmitting regions OA. The light-blocking region LSA can be positioned between the light-transmitting regions OA in one direction. Each sensor pixel SEP can be superimposed on multiple light-transmitting regions OA in a third direction (Z-axis direction). For example, each sensor pixel SEP can be superimposed on at least two light-transmitting regions OA in a third direction (Z-axis direction).

[0093] Each of the light-transmitting regions OA can be a channel through which light reflected from the ridges RID and valleys VAL of a fingerprint (fingerprint F) passes. Each of the light-transmitting regions OA can be made of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0094] The light-blocking region LSA can be made of a photosensitive resin capable of blocking light. For example, the light-blocking region LSA may include organic black pigments or inorganic black pigments such as carbon black.

[0095] When a user's finger F touches the cover window 100, the light emitted from the display panel 300 can be reflected by the ridges (RID) and valleys (VAL) of the fingerprint of finger F. Here, the amount of light reflected by the ridges (RID) of the fingerprint of finger F can be different from the amount of light reflected by the valleys (VAL) of the fingerprint of finger F.

[0096] The range LR of light incident on each sensor pixel SEP through the light transmission region OA can be smaller than the distance FP between the ridge RID and valley VAL of the fingerprint of finger F. Since the amount of light reflected by the ridge RID of the fingerprint of finger F differs from the amount of light reflected by the valley VAL of the fingerprint of finger F, the sensing current flowing through the photosensitive element of each sensor pixel SEP can vary depending on whether the incident light is reflected by the ridge RID or the valley VAL of the fingerprint of finger F. Therefore, the sensing voltage output from each sensor pixel SEP can vary depending on whether the incident light is reflected by the ridge RID or the valley VAL of the fingerprint of finger F. Therefore, the sensor driving circuit 480 (see...) Figure 10 The fingerprint pattern of finger F can be identified based on the sensing voltage of the sensor pixel SEP.

[0097] Figure 8An example of a display panel 300, a cover window 100, a fingerprint sensor 400, and a user's finger F is shown.

[0098] Figure 8 Implementation examples and Figure 6 The difference in this embodiment is that the light guide unit 420 includes a light-transmitting layer LTL and a light-shielding layer LSL with a pinhole (also known as a small hole or jack) PH, instead of a lens array LA. Figure 8 In the middle, the main description will be related to Figure 6 Differences in the implementation examples.

[0099] Reference Figure 8 The light-transmitting layer LTL can be disposed on the photosensitive layer 410 of the fingerprint sensor 400. The light-transmitting layer LTL can be made of an insulating material that transmits light. For example, the light-transmitting layer LTL can be made of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0100] A light-shielding layer LSL can be disposed on a light-transmitting layer LTL. The light-shielding layer LSL may comprise a photosensitive resin capable of blocking light, such as an organic black pigment or an inorganic black pigment such as carbon black. Optionally, the light-shielding layer LSL may comprise a metallic material that does not transmit light or has low light transmittance. For example, the light-shielding layer LSL may be a single layer or multiple layers made of any one or more of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and alloys thereof.

[0101] Each pinhole PH in the light-shielding layer LSL can be a channel through which light reflected from the ridges RID and valleys VAL of a fingerprint (F) passes. The pinhole PHs can be individually superimposed on the sensor pixel SEP in the third direction (Z-axis). Although in Figure 8 Each of the sensor pixel SEPs is superimposed with one pinhole PH in the third direction (Z-axis direction), but the number of pinhole PHs superimposed with each of the sensor pixel SEPs in the third direction (Z-axis direction) is not limited to this. For example, each of at least one sensor pixel SEP may be superimposed with at least two pinhole PHs.

[0102] When a user's finger F touches the cover window 100, the light emitted from the display panel 300 can be reflected by the ridges (RID) and valleys (VAL) of the fingerprint of finger F. Here, the amount of light reflected by the ridges (RID) of the fingerprint of finger F can be different from the amount of light reflected by the valleys (VAL) of the fingerprint of finger F.

[0103] The range LR of light incident on each sensor pixel SEP through the pinhole PH can be smaller than the distance FP between the ridge RID and valley VAL of the fingerprint of finger F. Since the amount of light reflected by the ridge RID of the fingerprint of finger F differs from the amount of light reflected by the valley VAL of the fingerprint of finger F, the sensing current flowing through the photosensitive element of each sensor pixel SEP can vary depending on whether the incident light is reflected by the ridge RID or the valley VAL of the fingerprint of finger F. Therefore, the sensing voltage output from each sensor pixel SEP can vary depending on whether the incident light is reflected by the ridge RID or the valley VAL of the fingerprint of finger F. Therefore, the sensor driving circuit 480 (see...) Figure 10 The fingerprint pattern of finger F can be identified based on the sensing voltage of the sensor pixel SEP.

[0104] Despite Figures 6 to 8 The light guide unit 420 includes a lens array LA, a collimator COM, or a light-shielding layer LSL, but the present invention is not limited thereto. In other words, the light guide unit 420 may include any two or three combinations of the lens array LA, the collimator COM, and the light-shielding layer LSL. For example, the light guide unit 420 may include the lens array LA and the collimator COM, the lens array LA and the light-shielding layer LSL, the collimator COM and the light-shielding layer LSL, or the lens array LA, the collimator COM, and the light-shielding layer LSL.

[0105] In the following text, we will combine Figures 9 to 21 The fingerprint sensor 400 is described in detail, which is capable of emitting noise light (also known as interference light) incident on the sensor pixel SEP. Figure 6 and Figure 8 The amount of NSL in the display panel 300 is minimized while preventing or reducing the interference between the scanning signal of the scanning line SL of the display panel 300 and the sensing signal of the sensing line RL of the fingerprint sensor 400 due to parasitic capacitance Cp.

[0106] Figure 9 It is along Figure 5 A cross-sectional view of an example of display panel 300, taken by line I-I'.

[0107] Reference Figure 9 The display panel 300 may include display pixels SP for displaying images (see...). Figure 5 Each of the display pixels SP may include a light-emitting element LEL, a first thin-film transistor ST1, and a capacitor CAP.

[0108] The display substrate DSUB can be made of an insulating material such as glass or polymer resin. For example, the display substrate DSUB can contain polyimide. The display substrate DSUB can be a flexible substrate that can be bent, folded, rolled, etc.

[0109] The display substrate DSUB may include, for example, multiple organic layers and multiple inorganic layers. For example, the display substrate DSUB may include a first organic layer, a first barrier layer disposed on the first organic layer and including at least one inorganic layer, a second organic layer disposed on the first barrier layer, and a second barrier layer disposed on the second organic layer and including at least one inorganic layer.

[0110] A first buffer layer BF1 can be disposed on the display substrate DSUB. The first buffer layer BF1 is used to protect the thin-film transistor layer of the thin-film transistor layer and the light-emitting layer 172 of the light-emitting element layer from the influence of moisture introduced through the display substrate DSUB (which is susceptible to moisture penetration). The first buffer layer BF1 can be composed of multiple inorganic layers stacked alternately. For example, the first buffer layer BF1 can be a multilayer in which one or more inorganic layers selected from silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide are stacked alternately.

[0111] The first active layer ACT1, the first source electrode S1, and the first drain electrode D1 of the first thin-film transistor ST1 can be disposed on the first buffer layer BF1. The first active layer ACT1 of the first thin-film transistor ST1 includes polycrystalline silicon, monocrystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or oxide semiconductor. The first source electrode S1 and the first drain electrode D1 can be formed to be conductive by doping silicon semiconductor or oxide semiconductor with ions or impurities. The first active layer ACT1 can be stacked with the first gate electrode G1 in a third direction (Z-axis direction), and the first source electrode S1 and the first drain electrode D1 can be not stacked with the first gate electrode G1 in a third direction (Z-axis direction), which is the thickness direction of the display substrate DSUB.

[0112] The first gate insulating layer GI1 can be disposed on the first active layer ACT1 of the first thin-film transistor ST1. The first gate insulating layer GI1 can be made of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first gate insulating layer GI1 can also be disposed on the first source electrode S1 and the first drain electrode D1.

[0113] The first gate electrode G1 and the first capacitor electrode CAE1 of the first thin-film transistor ST1 can be disposed on the first gate insulating layer GI1. The first gate electrode G1 can be stacked with the first active layer ACT1 in the third direction (Z-axis direction). The first capacitor electrode CAE1 can be stacked with the second capacitor electrode CAE2 in the third direction (Z-axis direction). The first gate electrode G1 can be a single layer or multiple layers made of any one or more of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and their alloys.

[0114] The first interlayer insulating film 141 can be disposed on the first gate electrode G1 and the first capacitor electrode CAE1. The first interlayer insulating film 141 can be made of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0115] The second capacitor electrode CAE2 can be disposed on the first interlayer insulating film 141. Since the first interlayer insulating film 141 has a predetermined dielectric constant, the first capacitor electrode CAE1, the second capacitor electrode CAE2, and the first interlayer insulating film 141 disposed between the first capacitor electrode CAE1 and the second capacitor electrode CAE2 can form a capacitor CAP. The second capacitor electrode CAE2 can be a single layer or multiple layers made of any one or more of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and their alloys.

[0116] The second interlayer insulating film 142 can be disposed on the second capacitor electrode CAE2. The second interlayer insulating film 142 can be made of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating film 142 may include multiple inorganic layers. The interlayer insulating film 140 includes a first interlayer insulating film 141 and a second interlayer insulating film 142.

[0117] The first pixel connection electrode ANDE1 can be disposed on the second interlayer insulating film 142. The first pixel connection electrode ANDE1 can be connected to the first drain electrode D1 of the first thin film transistor ST1 through the first pixel contact hole ANCT1 that penetrates the first gate insulating layer GI1, the first interlayer insulating film 141 and the second interlayer insulating film 142 to expose the first drain electrode D1 of the first thin film transistor ST1. The first pixel connection electrode ANDE1 can be a single layer or multiple layers made of any one or more of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and alloys thereof.

[0118] The first organic layer 160 for planarization can be disposed on the first pixel connection electrode ANDE1. The first organic layer 160 can be made of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0119] The second pixel connection electrode ANDE2 can be disposed on the first organic layer 160. The second pixel connection electrode ANDE2 can be connected to the first pixel connection electrode ANDE1 through the second pixel contact hole ANCT2 that penetrates the first organic layer 160 to expose the first pixel connection electrode ANDE1. The second pixel connection electrode ANDE2 can be offset from the first pixel connection electrode ANDE1. The second pixel connection electrode ANDE2 can be a single layer or multiple layers made of any one or more of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and alloys thereof.

[0120] The second organic layer 180 can be disposed on the second pixel connection electrode ANDE2. The second organic layer 180 can be made of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0121] In embodiments of the present invention, the second pixel connection electrode ANDE2 and the second organic layer 180 can be omitted. In this case, the first pixel connection electrode ANDE1 can be directly connected to the light-emitting pixel electrode 171. For example, the first pixel connection electrode ANDE1 can be directly connected to the light-emitting pixel electrode 171 through a contact hole in the first organic layer 160.

[0122] exist Figure 9 In this embodiment, the first thin-film transistor ST1 is formed as a top-gate transistor in which the first gate electrode G1 is located above the first active layer ACT1. However, the inventive concept is not limited thereto. The first thin-film transistor ST1 may also be formed as a bottom-gate transistor in which the first gate electrode G1 is located below the first active layer ACT1, or as a dual-gate transistor in which the first gate electrode G1 is located both above and below the first active layer ACT1.

[0123] The light-emitting element (LEL) and the diaphragm 190 can be disposed on the second organic layer 180. Each of the light-emitting elements (LEL) includes a light-emitting pixel electrode 171, a light-emitting layer 172, and a light-emitting common electrode 173.

[0124] The light-emitting pixel electrode 171 can be formed on the second organic layer 180. The light-emitting pixel electrode 171 can be connected to the second pixel connection electrode ANDE2 through the third pixel contact hole ANCT3 that penetrates the second organic layer 180 to expose the second pixel connection electrode ANDE2.

[0125] In the top-emission structure in which light is emitted from the light-emitting layer 172 toward the light-emitting common electrode 173, the light-emitting pixel electrode 171 can be made of a metallic material with high reflectivity (such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and indium tin oxide (ITO / Al / ITO), an APC alloy, or a stacked structure of APC alloy and indium tin oxide (ITO / APC / ITO)). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

[0126] The dam-like member 190 may be formed on the second organic layer 180 to separate the light-emitting pixel electrode 171 from another light-emitting pixel electrode 171, thereby defining an emission region. The dam-like member 190 may cover the edge of the light-emitting pixel electrode 171. The dam-like member 190 may be made of an organic layer such as an acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0127] The emitting region is the area in which light-emitting pixel electrodes 171, light-emitting layer 172 and light-emitting common electrode 173 are stacked sequentially, such that holes from light-emitting pixel electrodes 171 and electrons from light-emitting common electrode 173 recombine in light-emitting layer 172 to emit light.

[0128] A light-emitting layer 172 is formed on the light-emitting pixel electrode 171 and the dam-shaped member 190. The light-emitting layer 172 may include organic materials to emit light of a predetermined color. For example, the light-emitting layer 172 may include a hole transport layer, an organic material layer, and an electron transport layer.

[0129] A common light-emitting electrode 173 is formed on the light-emitting layer 172. The common light-emitting electrode 173 may cover the light-emitting layer 172. The common light-emitting electrode 173 may be a common layer common to all emission regions. A capping layer may be formed on the common light-emitting electrode 173.

[0130] In the top-emitting structure, the light-emitting common electrode 173 can be made of a transparent conductive oxide (TCO) capable of transmitting light (such as indium tin oxide (ITO) or indium zinc oxide (IZO)) or a semi-transmissive conductive material (such as magnesium (Mg), silver (Ag), or an alloy of Mg and Ag). When the light-emitting common electrode 173 is made of a semi-transmissive conductive material, the light output efficiency can be improved through a microcavity.

[0131] The encapsulation layer TFE can be disposed on the light-emitting common electrode 173. The encapsulation layer TFE includes at least one inorganic layer to prevent oxygen or moisture from penetrating into the light-emitting element layer. In addition, the encapsulation layer TFE includes at least one organic layer to protect the light-emitting element layer from foreign substances such as dust. For example, the encapsulation layer TFE includes a first encapsulation inorganic layer TFE1, an encapsulation organic layer TFE2, and a second encapsulation inorganic layer TFE3.

[0132] The first encapsulation inorganic layer TFE1 can be disposed on the light-emitting common electrode 173, the encapsulation organic layer TFE2 can be disposed on the first encapsulation inorganic layer TFE1, and the second encapsulation inorganic layer TFE3 can be disposed on the encapsulation organic layer TFE2. Each of the first encapsulation inorganic layer TFE1 and the second encapsulation inorganic layer TFE3 can be a multilayer in which one or more inorganic layers selected from silicon nitride layers, silicon oxynitride layers, silicon oxide layers, titanium oxide layers, and aluminum oxide layers are alternately stacked. The encapsulation organic layer TFE2 can be made of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0133] Figure 10 yes Figure 1 An exploded perspective view of an example of a fingerprint sensor 400.

[0134] Reference Figure 10 The fingerprint sensor 400 may include a fingerprint sensor substrate FSUB, a photosensitive layer 410, a light guide unit 420, a flexible film 460, a sensor circuit board 470, and a sensor driving circuit 480.

[0135] The fingerprint sensor substrate FSUB can be made of an insulating material such as glass or polymer resin. For example, the fingerprint sensor substrate FSUB may include polyimide. The fingerprint sensor substrate FSUB can be a flexible substrate that can be bent, folded, rolled, etc.

[0136] The photosensitive layer 410 can be disposed on the fingerprint sensor substrate FSUB. The photosensitive layer 410 may include sensor pixels (SEPs).

[0137] The light guide unit 420 can be disposed on the photosensitive layer 410. The light guide unit 420 may include, for example, Figures 6 to 8 The light guide unit 420 may include any one of the lens array LA, collimator COM, and light-shielding layer LSL shown, but the inventive concept is not limited thereto. For example, the light guide unit 420 may include, in addition to, Figures 6 to 8 The light guide unit 420 may be another element capable of guiding light, in addition to the lens array LA, collimator COM, and light-shielding layer LSL shown. For example, the light guide unit 420 may include an optical fiber for guiding light.

[0138] One side of the flexible film 460 can be disposed on the fingerprint sensor substrate FSUB not covered by the photosensitive layer 410. For example, the flexible film 460 can be spaced apart from the photosensitive layer 410 on the fingerprint sensor substrate FSUB. One side of the flexible film 460 can be disposed on the fingerprint pads (or "pads") FP1 and FP2 (see...) of the fingerprint sensor substrate FSUB. Figure 11 For example, the first side of the flexible film 460 can be disposed on the fingerprint pads FP1 and FP2 of the fingerprint sensor substrate FSUB (see...). Figure 11On the flexible film 460, one side can be attached to the fingerprint pads FP1 and FP2 via a conductive adhesive member such as an anisotropic conductive film (see...). Figure 11 Therefore, the flexible film 460 can be electrically connected to the fingerprint pads FP1 and FP2 (see...). Figure 11 ).

[0139] The other side of the flexible film 460 can be disposed on the sensor circuit board 470. For example, the second side of the flexible film 460 can be disposed on the sensor circuit board 470. The other side of the flexible film 460 can be attached to the sensor circuit board 470 by a conductive adhesive member such as an anisotropic conductive film. Therefore, the flexible film 460 can be electrically connected to the sensor circuit board 470.

[0140] The flexible film 460 can be a chip-on-film. The sensor circuit board 470 can be a flexible printed circuit board or a printed circuit board.

[0141] The sensor driving circuit 480 can be disposed on the sensor circuit board 470, but the present invention is not limited thereto. The sensor driving circuit 480 can also be disposed on the flexible film 460. The sensor driving circuit 480 can receive the sensing voltage of the sensor pixel SEP of the photosensitive layer 410 through the flexible film 460 and the sensor circuit board 470. Therefore, the sensor driving circuit 480 can determine how much light has been incident on the photosensitive element PD of each sensor pixel SEP (see [reference]) based on the sensing voltage of the sensor pixel SEP. Figure 12A The sensor driving circuit 480 can sense the amount of light incident on each sensor pixel (SEP), thus enabling it to recognize the user's fingerprint pattern.

[0142] Figure 11 This is a layout diagram of a fingerprint sensor 400 according to an embodiment of the present invention.

[0143] For ease of description, Figure 11 The image shows the fingerprint sensor 400, including the fingerprint sensor substrate FSUB, fingerprint pads FP1 and FP2, common voltage line VL1, fan-out line FL, first connection electrode VC1, common electrode CE, light-shielding conductive layer LSCL, and light-transmitting hole LTH.

[0144] Reference Figure 11The first fingerprint pad FP1 and the second fingerprint pad FP2 can be disposed on one side (e.g., the lower side) of the fingerprint sensor substrate FSUB. The first fingerprint pad FP1 and the second fingerprint pad FP2 can be arranged in a first direction (X-axis direction). Either of the first fingerprint pads FP1 can be disposed on the left side of the second fingerprint pad FP2, and the other first fingerprint pad FP1 can be disposed on the right side of the second fingerprint pad FP2. For example, one of the first fingerprint pads FP1 can be disposed on a first side of the second fingerprint pad FP2, and the other first fingerprint pad FP1 can be disposed on a second side of the second fingerprint pad FP2. In other words, the first fingerprint pads FP1 can be located at the leftmost and rightmost edges of the fingerprint pad arrangement. The second fingerprint pad FP2 can be disposed between the first fingerprint pads FP1. The first fingerprint pads FP1 and the second fingerprint pad FP2 can be electrically connected to the flexible membrane 460 via a conductive adhesive member such as an anisotropic conductive film.

[0145] The first fingerprint pad FP1 can be connected to the common voltage line VL1. Each of the common voltage lines VL1 can be connected to the first connection electrode VC1 located on the left or right side of the fingerprint sensor substrate FSUB.

[0146] The second fingerprint pad FP2 can be connected to the fan-out line FL. The fan-out line FL can be connected to the sensor line RL (see...). Figure 5 ) and fingerprint scanning line RSL (see Figure 5 In other words, the sensing line RL can be connected to the second fingerprint pad FP2 via the fan-out line FL, and the fingerprint scanning line RSL can be connected to the second fingerprint pad FP2 via the fan-out line FL.

[0147] The common electrode CE can be used with the photosensitive element PD of the sensor pixel SEP (see Figure 13 The common electrode CE is stacked in the third direction (Z-axis direction). It can be connected to the photosensitive element PD of the sensor pixel SEP (see...). Figure 13 The semiconductor layer PSEM (see) Figure 13 The P-type semiconductor layer PL (see) Figure 13 A common voltage or ground voltage can be applied to the common electrode CE. The common electrode CE can be made of a transparent conductive oxide (TCO) that can transmit light (such as indium tin oxide (ITO) or indium zinc oxide (IZO)) or a semi-transmissive conductive material (such as magnesium (Mg), silver (Ag), or an alloy of Mg and Ag).

[0148] The common electrode CE may include a connection portion SCE, a first protrusion SPE1, and a second protrusion SPE2. The connection portion SCE represents the photosensitive element PD of the common electrode CE connected to the sensor pixel SEP (see...). Figure 13 The semiconductor layer PSEM (see) Figure 13The P-type semiconductor layer PL (see) Figure 13 The first protrusion SPE1 represents the area protruding from the lower left end of the connecting portion SCE. The first protrusion SPE1 can be connected to the first connecting electrode VC1. For example, in a plan view, the first protrusion SPE1 can be superimposed on the first connecting electrode VC1. The second protrusion SPE2 represents the area protruding from the lower right end of the connecting portion SCE. The second protrusion SPE2 can be connected to another first connecting electrode VC1. For example, in a plan view, the second protrusion SPE2 can be superimposed on another first connecting electrode VC1.

[0149] A light-shielding conductive layer (LSCL) can be disposed on the common electrode (CE). The LSCL can contact the common electrode (CE). For example, the LSCL can directly contact the common electrode (CE). In this way, signals can be transmitted from the common electrode (CE) to the LSCL. The LSCL may include a light-transmitting aperture (LTH). The LTH can be connected to the photosensitive element (PD) of the sensor pixel (SEP) (see...). Figure 13 The light-transmitting aperture (LTH) is stacked in the third direction (Z-axis direction). It can be located on the photosensitive element (PD) of the sensor pixel SEP (see...). Figure 13 )superior.

[0150] The first fingerprint pad FP1 can receive a common voltage or a ground voltage from the flexible film 460. Therefore, the common voltage or ground voltage can be applied to the common electrode CE through the first fingerprint pad FP1, the common voltage line VL1, and the first connecting electrode VC1. In addition, since the light-shielding conductive layer LSCL contacts the common electrode CE, the common voltage or ground voltage can be applied to the light-shielding conductive layer LSCL.

[0151] like Figure 11 As shown, a common voltage or ground voltage can be applied to the common electrode CE and the light-shielding conductive layer LSCL through the first fingerprint pad FP1, the common voltage line VL1, and the first connection electrode VC1. Therefore, the light-shielding conductive layer LSCL can prevent or reduce the coupling of the scan signal of the scan line SL of the display panel 300 to the sensing signal of the sensing line RL of the fingerprint sensor 400 through the parasitic capacitance Cp. Thus, noise caused by the scan signal of the scan line SL of the display panel 300 can be prevented or reduced from being reflected in the sensing signal of the sensing line RL of the fingerprint sensor 400 through the parasitic capacitance Cp.

[0152] Additionally, since the light-shielding conductive layer LSCL includes the photosensitive element PD (see sensor pixel SEP)... Figure 13 The light-transmitting aperture LTH is stacked in the third direction (Z-axis direction), so it can block noise light from entering the photosensitive element PD of the sensor pixel SEP (see Figure 13Therefore, the light incident on the sensor pixel SEP can be directed to the photosensitive element PD (see...). Figure 13 Minimize noise light.

[0153] Figure 12A This is a circuit diagram illustrating a sensor pixel SEP according to an embodiment of the present invention. Figure 12B This is a layout diagram illustrating a sensor pixel SEP according to an embodiment of the present invention.

[0154] Reference Figure 12A and Figure 12B The photosensitive layer 410 of the fingerprint sensor 400 includes a fingerprint scanning line RSL, a sensing line RL, and a sensor pixel SEP. Each of the sensor pixels SEP includes a second thin-film transistor ST2 and a photosensitive element PD. For ease of description, in Figure 12B The common electrode CE and the light-shielding conductive layer LSCL are not shown in the figure (see Figure 11 ).

[0155] The fingerprint scanning line RSL can extend in a first direction (X-axis direction) and can be arranged in a second direction (Y-axis direction). The sensing line RL can extend in the second direction (Y-axis direction) and can be arranged in the first direction (X-axis direction).

[0156] The second thin-film transistor ST2 includes a second gate electrode G2, a second active layer ACT2, a second source electrode S2, and a second drain electrode D2.

[0157] The second gate electrode G2 can protrude from the fingerprint scan line RSL in the second direction (Y-axis direction).

[0158] The second active layer ACT2 can be stacked with the second gate electrode G2 in the third direction (Z-axis direction).

[0159] The second source electrode S2 can protrude from the sensing line RL in the first direction (X-axis direction). The second source electrode S2 can be connected to one side of the second active layer ACT2 through the source contact hole SCT.

[0160] The second drain electrode D2 can be connected to the other side of the second active layer ACT2 through the drain contact hole DCT.

[0161] The photosensitive element PD includes a sensing electrode RE, a semiconductor layer PSEM, and a common electrode CE (see Figure 11 The semiconductor layer PSEM can include a P-type semiconductor layer PL, an I-type semiconductor layer IL, and an N-type semiconductor layer NL.

[0162] The sensing electrode RE can be connected to the second drain electrode D2 via the connection contact hole CT. An N-type semiconductor layer NL can be disposed on the sensing electrode RE. The sensing electrode RE can contact the N-type semiconductor layer NL. The area of ​​the sensing electrode RE can be larger than the area of ​​the N-type semiconductor layer NL.

[0163] The type I semiconductor layer IL can be disposed on the type N semiconductor layer NL. The type N semiconductor layer NL can contact the type I semiconductor layer IL. The area of ​​the type N semiconductor layer NL can be larger than the area of ​​the type I semiconductor layer IL.

[0164] The P-type semiconductor layer PL can be disposed on the I-type semiconductor layer IL. The I-type semiconductor layer IL can contact the P-type semiconductor layer PL. The area of ​​the I-type semiconductor layer IL can be larger than the area of ​​the P-type semiconductor layer PL.

[0165] Common electrode CE (see) Figure 11 It can be placed on the P-type semiconductor layer PL. Common electrode CE (see...) Figure 11 It can be commonly set on the P-type semiconductor layer PL of the sensor pixel SEP.

[0166] Light-shielding conductive layer LSCL (see Figure 11 It can be set at the common electrode CE (see Figure 11 On top. Light-shielding conductive layer LSCL (see...) Figure 11 The light-transmitting aperture (LTH) can be stacked with the photosensitive element (PD) of the sensor pixel SEP. Figure 12B In this configuration, eight light-transmitting holes (LTHs) are stacked with the photosensitive element (PD) of each sensor pixel SEP. However, the number of light-transmitting holes (LTHs) stacked with the photosensitive element (PD) of each sensor pixel SEP is not limited to this. For example, more or fewer than eight light-transmitting holes (LTHs) can be stacked with the photosensitive element (PD) of each sensor pixel SEP.

[0167] Figure 13 It is along Figure 12B A cross-sectional view of an example fingerprint sensor 400 taken from line II-II'.

[0168] Reference Figure 13 The light-sensing layer 410 may include sensor pixels (SEPs) for sensing light. Each of the sensor pixels (SEPs) may include a second thin-film transistor (ST2) and a light-sensing element (PD).

[0169] The second buffer layer BF2 can be disposed on the fingerprint sensor substrate FSUB. The second buffer layer BF2 is a layer used to protect the second thin-film transistor ST2 and the photosensitive element PD of the photosensitive layer 410 from moisture introduced through the fingerprint sensor substrate FSUB (which is susceptible to moisture penetration). The second buffer layer BF2 can consist of multiple inorganic layers stacked alternately. For example, the second buffer layer BF2 can be a multilayer in which one or more inorganic layers selected from silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide layers are stacked alternately.

[0170] The second gate electrode G2 of the second thin-film transistor ST2 can be disposed on the second buffer layer BF2. The second gate electrode G2 can be a single layer or multiple layers made of any one or more of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu) and their alloys.

[0171] A second gate insulating layer GI2 can be disposed on the second gate electrode G2. The second gate insulating layer GI2 can be made of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0172] The second active layer ACT2 of the second thin-film transistor ST2 can be disposed on the second gate insulating layer GI2. The second active layer ACT2 includes polycrystalline silicon, monocrystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or oxide semiconductor. The second active layer ACT2 can be stacked with the second gate electrode G2 in a third direction (Z-axis direction), which is the thickness direction of the fingerprint sensor substrate FSUB.

[0173] A first insulating layer INS1 may be disposed on a second active layer ACT2. The first insulating layer INS1 may be made of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first insulating layer INS1 may include multiple inorganic layers.

[0174] The second source electrode S2 and the second drain electrode D2 of the second thin-film transistor ST2 can be disposed on the first insulating layer INS1. The second source electrode S2 can be connected to the second active layer ACT2 through the source contact hole SCT penetrating the first insulating layer INS1. The second drain electrode D2 can be connected to the second active layer ACT2 through the drain contact hole DCT penetrating the first insulating layer INS1. The second source electrode S2 and the second drain electrode D2 do not need to be stacked with the second gate electrode G2 in the third direction (Z-axis direction).

[0175] The first planarization layer PLA1 can be disposed on the second source electrode S2 and the second drain electrode D2. The first planarization layer PLA1 can be made of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin.

[0176] A photosensitive element PD can be disposed on the first planarization layer PLA1. For example... Figure 13 As shown, the photosensitive element PD can be formed as a photodiode. However, the present invention is not limited thereto. The photosensitive element PD can also be formed as a phototransistor. When the photosensitive element PD is a photodiode, it can include a sensing electrode RE, a semiconductor layer PSEM, and a common electrode CE. Here, the sensing electrode RE of the photosensitive element PD can be a cathode, and the common electrode CE can be an anode.

[0177] The sensing electrode RE can be disposed on the first planarization layer PLA1. For example, the sensing electrode RE can be in direct contact with the first planarization layer PLA1 and in direct contact with the second drain electrode D2 through the contact hole CT. The sensing electrode RE can be a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or it can have a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and indium tin oxide (ITO / Al / ITO), an APC alloy, or a stacked structure of APC alloy and indium tin oxide (ITO / APC / ITO).

[0178] A semiconductor layer PSEM, consisting of an N-type semiconductor layer NL, an I-type semiconductor layer IL, and a P-type semiconductor layer PL stacked sequentially, can be disposed on the sensing electrode RE. When the semiconductor layer PSEM is formed as a PIN structure, the I-type semiconductor layer IL is depleted by the P-type semiconductor layer PL and the N-type semiconductor layer NL. Therefore, an electric field is generated in the I-type semiconductor layer IL, and holes and electrons generated by light drift due to the electric field. Thus, holes can be collected to the common electrode CE through the P-type semiconductor layer PL, and electrons can be collected to the common electrode CE through the N-type semiconductor layer NL.

[0179] The P-type semiconductor layer PL can be positioned close to the surface on which external light is incident, while the N-type semiconductor layer NL can be positioned away from the surface on which external light is incident. Since the drift mobility of holes is lower than that of electrons, the P-type semiconductor layer PL can be formed close to the incident surface of external light to maximize the collection efficiency of the incident light.

[0180] An N-type semiconductor layer NL can be disposed on the sensing electrode RE, an I-type semiconductor layer IL can be disposed on the N-type semiconductor layer NL, and a P-type semiconductor layer PL can be disposed on the I-type semiconductor layer IL. In this case, the P-type semiconductor layer PL can be formed by doping amorphous silicon (a-Si:H) with a P-type dopant. The I-type semiconductor layer IL can be made of amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H). The N-type semiconductor layer NL can be formed by doping amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H) with an N-type dopant. The P-type semiconductor layer PL and the N-type semiconductor layer NL can be formed as approximately The thickness of the type I semiconductor layer IL can be formed to be 5000 to... The thickness.

[0181] Optionally, the N-type semiconductor layer NL can be disposed on the sensing electrode RE, and the I-type semiconductor layer IL can be omitted. The P-type semiconductor layer PL can be disposed on the N-type semiconductor layer NL. In this case, the P-type semiconductor layer PL can be formed by doping amorphous silicon (a-Si:H) with a P-type dopant. The N-type semiconductor layer NL can be formed by doping amorphous silicon germanium (a-SiGe:H) or amorphous silicon carbide (a-SiC:H) with an N-type dopant. The P-type semiconductor layer PL and the N-type semiconductor layer NL can be formed as approximately The thickness.

[0182] Furthermore, the upper or lower surface of at least any one of the sensing electrode RE, the P-type semiconductor layer PL, the I-type semiconductor layer IL, and the N-type semiconductor layer NL can be formed into a non-uniform structure through a texturing process to increase the absorption rate of external light. A texturing process is a process that forms a non-uniform structure on a material surface and treats the material surface to a shape such as a fabric surface. Texturing processes can be performed using photolithographic etching processes, anisotropic etching processes using chemical solutions, or groove-forming processes using mechanical scribing.

[0183] The second planarization layer PLA2 can be disposed on the side surface of the photosensitive element PD. The second planarization layer PLA2 can cover the side surfaces of the sensing electrode RE, the P-type semiconductor layer PL, the I-type semiconductor layer IL, and the N-type semiconductor layer NL of the photosensitive element PD, but may not cover the upper surface of the P-type semiconductor layer PL. The upper surfaces of the second planarization layer PLA2 and the upper surface of the P-type semiconductor layer PL can be flat. The second planarization layer PLA2 can be made of an organic layer such as an acrylamide resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0184] The common electrode CE can be disposed on the p-type semiconductor layer PL and the second planarization layer PLA2. The common electrode CE can be in direct contact with the p-type semiconductor layer PL and the second planarization layer PLA2. The common electrode CE can be made of a transparent conductive material that can transmit light (such as indium tin oxide (ITO) or indium zinc oxide (IZO)).

[0185] The light-shielding conductive layer LSCL can be disposed on the common electrode CE. For example, the common electrode CE can be disposed between the light-shielding conductive layer LSCL and the second planarization layer PLA2. Alternatively, the common electrode CE can be disposed between the light-shielding conductive layer LSCL and the p-type semiconductor layer PL. The light-shielding conductive layer LSCL can include a metallic material that is opaque or has low light transmittance. For example, the light-shielding conductive layer LSCL can be a single layer or multiple layers made of any one or more of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and their alloys.

[0186] The light-shielding conductive layer LSCL may include a light-transmitting aperture LTH. The light-transmitting aperture LTH can be stacked with the photosensitive element PD of the sensor pixel SEP in the third direction (Z-axis direction). Therefore, light passing through the light-transmitting aperture LTH can be incident on the photosensitive element PD of the sensor pixel SEP.

[0187] The light guide unit 420 can be disposed on the light-shielding conductive layer LSCL. The light guide unit 420 can be an element used to provide or guide light to each of the sensor pixel SEPs. Figure 13 In this light guide unit 420, a lens array LA with multiple lenses is included. Each of the lenses may be an upwardly convex lens. The lenses may be disposed at the top of the light guide unit 420. The lenses may form the upper surface of the light guide unit 420. The lens array LA may be made of a polymer resin or plastic capable of transmitting light.

[0188] Lenses can be stacked with apertures (LTH) in the third direction (Z-axis). Therefore, light passing through a lens stacked with an aperture (LTH) in the third direction (Z-axis) can be incident on the photosensitive element (PD) through the aperture (LTH). However, light passing through a lens not stacked with an aperture (LTH) in the third direction (Z-axis) can be blocked by a light-shielding conductive layer (LSCL). Therefore, the light-shielding conductive layer (LSCL) can block noise light from entering the photosensitive element (PD) of the sensor pixel (SEP).

[0189] Despite Figure 13In this invention, a lens (LENS) and a light-transmitting aperture (LTH) are stacked in the third direction (Z-axis direction), but the concept is not limited thereto. For example, a lens (LENS) can be stacked with multiple light-transmitting apertures (LTH) in the third direction (Z-axis direction).

[0190] In the second direction ( Figure 12B In the Y-axis direction, the pitch PLE of each lens can be larger than the length LLT of each aperture LTH. Additionally, the pitch PLE of each lens can be larger than the length LLT of each aperture LTH in the first direction (…). Figure 12B The length LLT in the X-axis direction is large. The light-shielding conductive layer LSCL can be coupled with the first direction ( Figure 12B (X-axis direction) and second direction ( Figure 12B The boundaries between adjacent lenses in the Y-axis direction are superimposed in the Z-axis direction.

[0191] A transparent adhesive component 430 may be disposed between the photosensitive layer 410 and the light guiding unit 420. The transparent adhesive component 430 may be a transparent adhesive resin such as OCR or a transparent adhesive film such as OCA film.

[0192] like Figure 13 As shown, since the light-shielding conductive layer LSCL contacts the common electrode CE, the common voltage or ground voltage applied to the common electrode CE can be applied to the light-shielding conductive layer LSCL. In other words, the common voltage or ground voltage can be applied to the light-shielding conductive layer LSCL of each photosensitive element PD. Therefore, the light-shielding conductive layer LSCL can prevent or reduce the coupling of the scan signal of the scan line SL of the display panel 300 with the sensing signal of the sensing line RL of the fingerprint sensor 400 through the parasitic capacitance Cp. Therefore, noise caused by the scan signal of the scan line SL of the display panel 300 can be prevented or reduced from being reflected in the sensing signal of the sensing line RL of the fingerprint sensor 400 through the parasitic capacitance Cp.

[0193] Furthermore, since the light-shielding conductive layer LSCL includes a light-transmitting aperture LTH superimposed on the photosensitive element PD of the sensor pixel SEP in the third direction (Z-axis direction), it can block noise light from entering the photosensitive element PD of the sensor pixel SEP. Therefore, the noise light incident on the photosensitive element PD of the sensor pixel SEP can be minimized.

[0194] According to an embodiment of the present invention, a fingerprint sensor includes: a fingerprint sensor substrate FSUB; a light sensing element PD, including a sensing electrode RE disposed on the fingerprint sensor substrate FSUB, a semiconductor layer PSEM disposed on the sensing electrode RE, and a common electrode CE disposed on the semiconductor layer PSEM; a light-shielding conductive layer LSCL disposed on the common electrode CE and including a light-transmitting hole LTH; and a light guiding unit 420 disposed on the light-shielding conductive layer LSCL.

[0195] Figure 14 It is along Figure 12B A cross-sectional view of an example fingerprint sensor 400 taken from line II-II'.

[0196] Figure 14 Implementation examples and Figure 13 The difference in this embodiment is that the light guide unit 420 includes a collimator COM instead of a lens array LA. Figure 14 In the middle, the main description will be related to Figure 13 Differences in the implementation examples.

[0197] Reference Figure 14 The collimator COM may include a light transmission region OA that transmits light and a light blocking region LSA that blocks light. The light blocking region LSA may surround each of the light transmission regions OA. The light blocking region LSA may be positioned in one direction between the light transmission regions OA.

[0198] Each of the light-transmitting regions OA can be a channel through which light reflected from the ridges RID and valleys VAL of a fingerprint (fingerprint F) passes. Each of the light-transmitting regions OA can be made of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0199] The light-blocking region LSA can be made of a photosensitive resin capable of blocking light. For example, the light-blocking region LSA may include organic black pigments or inorganic black pigments such as carbon black. The light-blocking region LSA can be stacked with the light-shielding conductive layer LSCL in the third direction (Z-axis direction).

[0200] The light-transmitting region OA can be superimposed on the light-transmitting aperture LTH in the third direction (Z-axis). Therefore, light passing through the light-transmitting region OA superimposed on the light-transmitting aperture LTH in the third direction (Z-axis) can be incident on the photosensitive element PD through the light-transmitting aperture LTH. However, light passing through the light-transmitting region OA that is not superimposed on the light-transmitting aperture LTH in the third direction (Z-axis) can be blocked by the light-shielding conductive layer LSCL. Therefore, the light-shielding conductive layer LSCL can block noise light from entering the photosensitive element PD of the sensor pixel SEP.

[0201] The size of each light transmission region OA can be larger than the size of each light-transmitting aperture LTH. For example, each light transmission region OA in the second direction ( Figure 12B The length of OAL in the Y-axis direction can be greater than that of each light-transmitting aperture LTH in the second direction ( Figure 12B The length LLT in the Y-axis direction is large. Additionally, each light-transmitting region OA in the first direction ( Figure 12B The length of each light-transmitting aperture LTH in the X-axis direction can be greater than that in the first direction ( Figure 12B The length LLT in the X-axis direction is large.

[0202] Figure 15 It is along Figure 12B A cross-sectional view of an example fingerprint sensor 400 taken from line II-II'.

[0203] Figure 15 Implementation examples and Figure 13 The difference in this embodiment is that the light guide unit 420 includes a light-shielding layer LSL with pinholes PH, instead of a lens array LA. Figure 15 In the middle, the main description will be related to Figure 13 Differences in the implementation examples.

[0204] Reference Figure 15 The light-shielding layer LSL may include a photosensitive resin capable of blocking light, such as an organic black pigment or an inorganic black pigment such as carbon black. Optionally, the light-shielding layer LSL may include a metallic material that does not transmit light or has low light transmittance. For example, the light-shielding layer LSL may be a single layer or multiple layers made of any one or more of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), and alloys thereof. The light-shielding layer LSL may be stacked with the light-shielding conductive layer LCL in the third direction (Z-axis direction). The light-shielding layer LSL may not be fully stacked with the light-shielding conductive layer LCL in the third direction (Z-axis direction).

[0205] Each pinhole PH can be a channel through which light reflected from the ridges (RID) and valleys (VAL) of a fingerprint (F) passes. The pinhole PH can be superimposed on the light-transmitting aperture (LTH) in the third direction (Z-axis). Therefore, light passing through the pinhole PH superimposed on the light-transmitting aperture (LTH) in the third direction (Z-axis) can be incident on the photosensitive element PD through the light-transmitting aperture (LTH). However, light passing through the pinhole PH not superimposed on the light-transmitting aperture (LTH) in the third direction (Z-axis) can be blocked by the light-shielding conductive layer (LSCL). Therefore, the light-shielding conductive layer (LSCL) can block noise light from entering the photosensitive element PD of the sensor pixel (SEP).

[0206] The size of each pinhole (PH) can be larger than the size of each light-transmitting aperture (LTH). For example, each pinhole (PH) in the second direction ( Figure 12B The length PHL in the Y-axis direction can be greater than that of each light-transmitting aperture LTH in the second direction ( Figure 12B The length LLT in the Y-axis direction is large. Additionally, the length LLT of each pinhole in the first direction (…) Figure 12B The length of each light-transmitting aperture LTH in the X-axis direction can be greater than that in the first direction ( Figure 12B The length along the X-axis is large.

[0207] Figure 16 It is along Figure 11 A cross-sectional view of an example fingerprint sensor 400 taken from line III-III'.

[0208] exist Figure 16 In the middle, the first protruding part SPE1 of the common electrode CE is connected to the first connecting electrode VC1 through the first connecting contact hole VCT1.

[0209] Reference Figure 11 and Figure 16 The first connecting electrode VC1 can be disposed on the second buffer layer BF2. The common voltage line VL1 connected to the first connecting electrode VC1 (see...) Figure 11 This can be set on the second buffer layer BF2. The first connecting electrode VC1 and the common voltage line VL1 (see...) Figure 11 It can be disposed on the same layer as the second gate electrode G2 of the second thin film transistor ST2, and can be made of the same material as the second gate electrode G2.

[0210] The first protruding portion SPE1 of the common electrode CE can be disposed on the second planarization layer PLA2. The first protruding portion SPE1 of the common electrode CE can be connected to the first connection electrode VC1 through the first connection contact hole VCT1 penetrating the second gate insulating layer GI2, the first insulating layer INS1, the first planarization layer PLA1 and the second planarization layer PLA2.

[0211] Due to the first protruding part SPE1 of the common electrode CE, as Figure 16 The ground shown is connected to the first connection electrode VC1 through the first connection contact hole VCT1, so the common electrode CE can be electrically connected to the first fingerprint pad FP1. Therefore, the common electrode CE can receive common voltage or ground voltage through the first fingerprint pad FP1.

[0212] Figure 17 This is a layout diagram of a fingerprint sensor 400 according to an embodiment of the present invention.

[0213] Figure 17 Implementation examples and Figure 11The difference in this embodiment is that the light-shielding conductive layer LSCL is electrically insulated from the common electrode CE, and the light-shielding conductive layer LSCL receives a voltage different from the voltage applied to the common electrode CE through the second connection electrode VC2. Figure 17 In the middle, the main description will be related to Figure 11 Differences in the implementation examples.

[0214] Reference Figure 17 The light-shielding conductive layer LSCL can be disposed on the common electrode CE. The light-shielding conductive layer LSCL does not need to contact the common electrode CE. For example, as... Figure 18 As shown, the second insulating layer INS2 can be disposed between the light-shielding conductive layer LSCL and the common electrode CE. Therefore, the light-shielding conductive layer LSCL can be electrically insulated from the common electrode CE. In other words, electrical signals can not be transmitted from the common electrode CE to the light-shielding conductive layer LSCL. In this case, while the light-shielding conductive layer LSCL is subjected to a ground voltage, the common electrode CE can be subjected to a common voltage.

[0215] The light-shielding conductive layer LSCL may include a light-shielding portion LSC, a first light-shielding protrusion LSP1, and a second light-shielding protrusion LSP2. The light-shielding portion LSC may be stacked with the connection portion SCE of the common electrode CE in a third direction (Z-axis direction). The light-shielding portion LSC may be connected to the photosensitive element PD of the sensor pixel SEP (see...). Figure 12B The light-shielding protrusions are stacked in the third direction (Z-axis direction). The first light-shielding protrusion LSP1 represents the area protruding from the lower left end of the light-shielding portion LSC. The first light-shielding protrusion LSP1 may be adjacent to the first protrusion SPE1. The first light-shielding protrusion LSP1 may be connected to the second connecting electrode VC2. The second light-shielding protrusion LSP2 represents the area protruding from the lower right end of the light-shielding portion LSC. The second light-shielding protrusion LSP2 may be adjacent to the second protrusion SPE2. The second light-shielding protrusion LSP2 may be connected to another second connecting electrode VC2.

[0216] The third fingerprint pad FP3 can be disposed between the first fingerprint pad FP1 and the second fingerprint pad FP2. The first fingerprint pad FP1, the second fingerprint pad FP2, and the third fingerprint pad FP3 can be electrically connected to the flexible membrane 460 through a conductive adhesive member such as an anisotropic conductive film. Therefore, the first fingerprint pad FP1 can receive a common voltage from the flexible membrane 460, and the third fingerprint pad FP3 can receive a ground voltage from the flexible membrane 460.

[0217] The common voltage can be applied to the common electrode CE through the first fingerprint pad FP1, the common voltage line VL1, and the first connecting electrode VC1. Additionally, the ground voltage can be applied to the light-shielding conductive layer LSCL through the third fingerprint pad FP3, the ground line VL2, and the second connecting electrode VC2.

[0218] like Figure 17 As shown, the ground voltage can be applied to the light-shielding conductive layer LSCL through the third fingerprint pad FP3, the ground wire VL2, and the second connection electrode VC2. Therefore, the light-shielding conductive layer LSCL can prevent or reduce the coupling of the scan signal of the scan line SL of the display panel 300 to the sensing signal of the sensing line RL of the fingerprint sensor 400 through the parasitic capacitance Cp. Thus, noise caused by the scan signal of the scan line SL of the display panel 300 can be prevented or reduced from being reflected in the sensing signal of the sensing line RL of the fingerprint sensor 400 through the parasitic capacitance Cp.

[0219] Furthermore, since the light-shielding conductive layer LSCL includes a light-transmitting aperture LTH superimposed on the photosensitive element PD of the sensor pixel SEP in the third direction (Z-axis direction), it can block noise light from entering the photosensitive element PD of the sensor pixel SEP. Therefore, the noise light incident on the photosensitive element PD of the sensor pixel SEP can be minimized.

[0220] Figure 18 It is along Figure 12B A cross-sectional view of an example fingerprint sensor 400 taken from line II-II'.

[0221] Figure 18 Implementation examples and Figure 13 The difference in this embodiment is that the second insulating layer INS2 is disposed between the common electrode CE and the light-shielding conductive layer LSCL. Figure 18 In the middle, omission and Figure 13 The embodiments contain redundant descriptions of the same elements and features.

[0222] Reference Figure 18 The second insulating layer INS2 can be disposed on the common electrode CE. Since the second insulating layer INS2 is made of insulating material, the common electrode CE and the light-shielding conductive layer LSCL can be electrically insulated by the second insulating layer INS2.

[0223] The second insulating layer INS2 can be made of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. Alternatively, the second insulating layer INS2 can be made of an organic layer such as an acrylamide resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0224] Figure 19 It is along Figure 12B A cross-sectional view of an example fingerprint sensor 400 taken from line II-II'.

[0225] Figure 19 Implementation examples and Figure 14The difference in this embodiment is that the second insulating layer INS2 is disposed between the common electrode CE and the light-shielding conductive layer LSCL. The second insulating layer INS2 is combined with the above... Figure 18 The insulation layers described are essentially the same, so they will not be described again here.

[0226] Figure 20 It is along Figure 12B A cross-sectional view of an example fingerprint sensor 400 taken from line II-II'.

[0227] Figure 20 Implementation examples and Figure 15 The difference in this embodiment is that the second insulating layer INS2 is disposed between the common electrode CE and the light-shielding conductive layer LSCL. The second insulating layer INS2 is combined with the above... Figure 18 The insulation layers described are essentially the same, so they will not be described again here.

[0228] Figure 21 It is along Figure 17 A cross-sectional view of an example fingerprint sensor 400 taken from line IV-IV'.

[0229] exist Figure 21 In the process, the first light-shielding protrusion LSP1 of the light-shielding conductive layer LSCL is connected to the second connecting electrode VC2 through the second connecting contact hole VCT2.

[0230] Reference Figure 21 The second connecting electrode VC2 can be disposed on the second buffer layer BF2. The grounding wire VL2 connected to the second connecting electrode VC2 (see...) Figure 17 This can be set on the second buffer layer BF2. The second connecting electrode VC2 and the ground wire VL2 (see...) Figure 17 It can be disposed on the same layer as the second gate electrode G2 of the second thin film transistor ST2, and can be made of the same material as the second gate electrode G2.

[0231] The first light-shielding protrusion LSP1 of the light-shielding conductive layer LSCL can be disposed on the second insulating layer INS2. The first light-shielding protrusion LSP1 of the light-shielding conductive layer LSCL can be electrically connected to the second connection contact hole VCT2 through the second connection contact hole VCT2 that penetrates the second gate insulating layer GI2, the first insulating layer INS1, the first planarization layer PLA1, the second planarization layer PLA2 and the second insulating layer INS2.

[0232] Because the first light-shielding protrusion LSP1 of the light-shielding conductive layer LSCL is as follows Figure 21As shown, the ground is connected to the second connection electrode VC2 through the second connection contact hole VCT2, so the light-shielding conductive layer LSCL can be electrically connected to the third fingerprint pad FP3. Therefore, the light-shielding conductive layer LSCL can receive the ground voltage through the third fingerprint pad FP3.

[0233] Along Figure 17 The cross-sectional view of the fingerprint sensor 400 taken from line III-III' is combined with the above. Figure 16 The sectional views described are essentially the same, so they will not be described again here.

[0234] In the fingerprint sensor and display device including the fingerprint sensor according to embodiments of the present invention, a common voltage or ground voltage is applied to a light-shielding conductive layer disposed on the common electrode of each photosensitive element. Therefore, the light-shielding conductive layer can prevent or reduce the coupling of the scan signal of the scan lines of the display panel to the sensing signal of the sensing lines of the fingerprint sensor through parasitic capacitance. Thus, noise caused by the scan signal of the scan lines of the display panel can be prevented or reduced from being reflected in the sensing signal of the sensing lines of the fingerprint sensor through parasitic capacitance.

[0235] In the fingerprint sensor and display device including the fingerprint sensor according to embodiments of the present invention, since the light-shielding conductive layer includes a light-transmitting hole stacked with the light-sensing element, it can block noise light from entering the light-sensing element. Therefore, the noise light incident on the light-sensing element can be minimized.

[0236] Although embodiments of the inventive concept have been specifically shown and described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made thereto.

Claims

1. A fingerprint sensor, the fingerprint sensor comprising: Base; A photosensitive element includes a sensing electrode disposed on the substrate, a semiconductor layer disposed on the sensing electrode, and a common electrode disposed on the semiconductor layer; An insulating layer is disposed on the common electrode; A light-shielding conductive layer is disposed on the insulating layer and includes light-transmitting holes; and The light guide unit is disposed on the light-shielding conductive layer. The light-shielding conductive layer is electrically insulated from the common electrode.

2. The fingerprint sensor according to claim 1, wherein, The common electrode comprises a transparent conductive material.

3. The fingerprint sensor according to claim 1, wherein, A common voltage is applied to the common electrode, and a ground voltage is applied to the light-shielding conductive layer.

4. The fingerprint sensor according to claim 1, further comprising: The first fingerprint pad is disposed on one side of the substrate; A common voltage line is connected to the first fingerprint pad; as well as The first connecting electrode is connected to the common voltage line. The common electrode is connected to the first connecting electrode through the first connecting contact hole.

5. The fingerprint sensor according to claim 4, further comprising a planarization layer covering the side surface of the semiconductor layer, wherein, The common electrode is disposed on the planarization layer, and the first connection contact hole penetrates the planarization layer.

6. The fingerprint sensor according to claim 4, further comprising: A gate electrode is disposed on the substrate; A gate insulating layer is disposed on the gate electrode; An active layer is disposed on the gate insulating layer; A first insulating layer is disposed on the active layer; The source electrode is disposed on the first insulating layer and connected to the active layer through a source contact hole penetrating the first insulating layer; as well as The drain electrode is disposed on the first insulating layer and connected to the active layer through a drain contact hole that penetrates the first insulating layer.

7. The fingerprint sensor according to claim 6, further comprising: A second fingerprint pad is disposed on one side of the substrate and spaced apart from the first fingerprint pad; Sensing lines are connected to the source electrode; The fingerprint scanning line is connected to the gate electrode; as well as A fan-out line connects at least one of the second fingerprint pads to the sensing line or the fingerprint scanning line.

8. The fingerprint sensor according to claim 4, further comprising: A third fingerprint pad is disposed on one side of the substrate and spaced apart from the first fingerprint pad; The grounding wire is connected to the third fingerprint pad; as well as The second connecting electrode is connected to the grounding wire. The light-shielding conductive layer is connected to the second connection electrode through the second connection contact hole.

9. The fingerprint sensor according to claim 8, further comprising: A planarization layer covers the side surface of the semiconductor layer; as well as A second insulating layer is disposed on the planarization layer. The light-shielding conductive layer is disposed on the second insulating layer, and the second connection contact hole penetrates the second insulating layer and the planarization layer.

10. The fingerprint sensor according to claim 1, wherein, The light guiding unit includes a lens array, which comprises multiple lenses.

11. The fingerprint sensor according to claim 10, wherein, The boundary between adjacent lenses in the plurality of lenses is superimposed on the light-shielding conductive layer.

12. The fingerprint sensor according to claim 1, wherein, The light guide unit includes a light transmission area and a light blocking area.

13. The fingerprint sensor according to claim 12, wherein, At least one of the light-transmitting holes is superimposed on the light-transmitting region.

14. The fingerprint sensor according to claim 1, wherein, The light guide unit includes a light-shielding layer, and the light-shielding layer includes pinholes.

15. The fingerprint sensor according to claim 14, wherein, At least one of the light-transmitting holes overlaps with at least one of the pinholes.

16. The fingerprint sensor according to claim 14, wherein, The size of at least one of the pinholes is larger than the size of at least one of the light-transmitting holes.

17. A display device, the display device comprising: Display panel; displays images. as well as A fingerprint sensor is disposed on the surface of the display panel and senses light passing through the display panel. The fingerprint sensor includes: Base; A light sensing element includes a sensing electrode disposed on the substrate and a common electrode disposed on the sensing electrode; An insulating layer is disposed on the common electrode; A light-shielding conductive layer, including a light-transmitting hole, is disposed on the insulating layer; and The light-guiding section guides light to the photosensitive element and is disposed on the light-shielding conductive layer. The light-shielding conductive layer is electrically insulated from the common electrode.

18. The display device according to claim 17, further comprising: A bracket, disposed on the surface of the display panel, and including a battery hole; and The battery is disposed in the battery hole.

19. The display device according to claim 18, wherein, The fingerprint sensor is stacked with the battery.

20. A fingerprint sensor, the fingerprint sensor comprising: Base; A light sensing element includes a sensing electrode disposed on the substrate and a common electrode disposed on the sensing electrode; An insulating layer is disposed on the common electrode; A light-shielding conductive layer, including light-transmitting holes, is disposed on the insulating layer; as well as The light-guiding component guides the light and is disposed on the light-shielding conductive layer. The light guided by the light guide portion passes through at least one of the light-transmitting holes and incident on the photosensitive element. The light-shielding conductive layer is electrically insulated from the common electrode.

21. A fingerprint sensor, the fingerprint sensor comprising: Base; Sensing electrodes are disposed on the substrate and connected to the transistor; A common electrode is disposed on the sensing electrode; An insulating layer is disposed on the common electrode; A light-shielding conductive layer is disposed on the insulating layer; as well as The light guide unit is disposed on the light-shielding conductive layer. The light-shielding conductive layer is electrically insulated from the common electrode.

Images