Laser device

Abstract

A laser device includes: a laser generator that emits a laser beam; a beam quality factor conversion section that divides the laser beam emitted from the laser generator in a first direction intersecting an emission direction to form a plurality of sub-beams, and arranges and emits the plurality of sub-beams in a second direction intersecting the emission direction and the first direction; a telescopic lens section that adjusts a size of the laser beam emitted from the beam quality factor conversion section in the first direction, and includes a first lens array having first to nth incident lenses and a second lens array having first to mth emission lenses that are different from the first lens array in aberration, where m and n are natural numbers of 1 or more; and a condenser lens that condenses the laser beam emitted from the telescopic lens section in the first direction.

Description

Technical Field

[0001] The present invention relates to a laser device, and more specifically to a laser device including a beam quality factor conversion unit. Background Technology

[0002] Recently, attention has been increasing towards display devices. As a result, display devices are being manufactured in various types, including organic light-emitting displays and liquid crystal displays (LCDs).

[0003] The display device can utilize thin-film transistors (TFTs) to control whether and how much light a pixel emits. The TFT may include an active layer, a gate electrode, a source electrode, and a drain electrode. The active layer may use oxide-based semiconductor materials and / or silicon-based semiconductor materials.

[0004] Recently, silicon-based semiconductor materials mainly use polycrystalline silicon (poly-Si), which is formed by crystallizing amorphous silicon (a-Si). During the process of crystallizing the amorphous silicon (a-Si) into polycrystalline silicon (poly-Si), a laser device can irradiate the amorphous silicon (a-Si) with a laser beam. Summary of the Invention

[0005] The technical problem of the present invention is that it has been proposed in view of such problems, and the object of the present invention is to provide a laser device including a beam quality factor conversion unit.

[0006] However, the problems to be solved by the present invention are not limited to those mentioned above, and various extensions can be made without departing from the concept and scope of the present invention.

[0007] A laser device according to an embodiment of the present invention, used to achieve the above-described objective, may include: a laser generator that emits a laser beam; a beam quality factor conversion unit that divides the laser beam emitted from the laser generator into a plurality of sub-beams in a first direction intersecting the emission direction, and arranges and emits the plurality of sub-beams in a second direction intersecting both the emission direction and the first direction; a telescope lens unit that adjusts the size of the laser beam emitted from the beam quality factor conversion unit in the first direction, and includes a first lens array having a first to nth incident lenses and a second lens array having a first to mth exiting lenses with aberrations different from the first lens array, wherein m and n are natural numbers greater than or equal to 1; and a focusing lens that focuses the laser beam emitted from the telescope lens unit in the first direction.

[0008] In one embodiment, the curvatures of the first to the nth incident lenses may be the same.

[0009] In one embodiment, the curvature of at least one of the first to m-th exiting lenses may be different from the curvature of the remaining exiting lenses other than the at least one exiting lens.

[0010] In one embodiment, the curvatures of the first to the mth exiting lenses may be the same.

[0011] In one embodiment, the curvature of at least one of the first to nth incident lenses may be different from the curvature of the remaining incident lenses other than the at least one incident lens.

[0012] In one embodiment, the thicknesses of the first to the nth incident lenses may be the same.

[0013] In one embodiment, the thickness of at least one of the first to m-th exiting lenses may be different from the thickness of the remaining exiting lenses other than the at least one exiting lens.

[0014] In one embodiment, the thicknesses of the first to the mth exiting lenses may be the same.

[0015] In one embodiment, the thickness of at least one of the first to nth incident lenses may be different from the thickness of the remaining incident lenses other than the at least one incident lens.

[0016] In one embodiment, the laser beam focused in the condensing lens may irradiate the worktable, and the condensing lens may be movable in the direction in which the laser beam irradiates the worktable.

[0017] In one embodiment, the laser device may further include a homogenization unit that homogenizes the laser beam emitted from the telescope lens in the second direction.

[0018] In one embodiment, the beam quality factor conversion unit may convert the size of the laser beam in the first direction and the size in the second direction and then emit it.

[0019] In one embodiment, the beam quality factor conversion unit may change the beam quality factor of the laser beam in the first direction and the beam quality factor in the second direction.

[0020] In one embodiment, the laser device may further include a beam splitter that splits the laser beam emitted from the beam quality factor conversion section and emits it toward the telescope lens section.

[0021] In one embodiment, the laser device may further include a beam mirror that reflects the laser beam emitted from the beam quality factor conversion section and emits it towards the telescope lens section.

[0022] A laser device according to an embodiment of the present invention, used to achieve the above-described objectives, may include: a laser generator that emits a laser beam; a beam quality factor conversion unit that divides the laser beam emitted from the laser generator into a plurality of sub-beams in a first direction intersecting the emission direction, and arranges and emits the plurality of sub-beams in a second direction intersecting both the emission direction and the first direction; a telescope lens unit that adjusts the size of the laser beam emitted from the beam quality factor conversion unit in the first direction, and includes first to k-th incident lenses and first to k-th exiting lenses having the same curvature and the same thickness as the first to k-th incident lenses, wherein k is a natural number greater than or equal to 2; and a focusing lens that focuses the laser beam emitted from the telescope lens unit in the first direction.

[0023] In one embodiment, the first to kth incident lenses and the first to kth exiting lenses may be arranged opposite to each other, and at least one of the distances between the first to kth incident lenses and the first to kth exiting lenses is different from the remaining distances other than the at least one distance.

[0024] In one embodiment, the laser beam focused in the condensing lens may irradiate the worktable, and the condensing lens may be movable in the direction in which the laser beam irradiates the worktable.

[0025] In one embodiment, the laser device may further include a homogenization unit that homogenizes the laser beam emitted from the telescope lens in the second direction.

[0026] In one embodiment, the beam quality factor conversion unit may change the beam quality factor of the laser beam in the first direction and the beam quality factor in the second direction, and convert the size of the laser beam in the first direction and the size in the second direction before emitting it.

[0027] (Invention Effects)

[0028] A laser device according to an embodiment of the present invention may include a beam quality factor conversion unit and a telescope lens unit. The telescope lens unit may include a first lens array and a second lens array with aberrations different from those of the first lens array. Alternatively, the lenses of the first lens array and the lenses of the second lens array may be arranged with different spacings from each other.

[0029] Therefore, the laser device can emit a uniform laser beam by adjusting the focal point of the laser beam. Amorphous silicon can be effectively crystallized using this laser device.

[0030] Furthermore, the laser beam can be homogenized in the short axis direction without the need for a homogenization section in the short axis direction, thanks to the beam quality factor conversion section and the telescope lens section.

[0031] However, the effects of the present invention are not limited to those described above, and various extensions can be made without departing from the concept and scope of the present invention. Attached Figure Description

[0032] Figure 1 This is a plan view illustrating a display device according to an embodiment of the present invention.

[0033] Figure 2 It shows along Figure 1 A cross-sectional view of an embodiment taken by the I-I' line.

[0034] Figure 3 This is a flowchart illustrating the movement path of a laser beam emitted from a laser device according to an embodiment of the present invention.

[0035] Figure 4 This is a perspective view showing a laser device according to an embodiment of the present invention.

[0036] Figure 5 This is a schematic diagram illustrating one embodiment of a laser beam passing through a beam quality factor conversion section.

[0037] Figure 6a as well as Figure 6b It is shown Figure 5 A diagram of an embodiment of the beam quality factor conversion unit.

[0038] Figure 7 as well as Figure 8 This is a diagram illustrating an embodiment of a laser beam being partially segmented by a beam quality factor conversion.

[0039] Figure 9 This is a block diagram illustrating one embodiment of the telescope lens section.

[0040] Figure 10a , Figure 10b as well as Figure 10c This is a cross-sectional view showing an embodiment of a lens included in a telephoto lens section.

[0041] Figure 11 This is a plan view showing one embodiment of the homogenization section.

[0042] Figure 12 This is a block diagram illustrating one embodiment of the telescope lens section.

[0043] Figure 13 This is a diagram showing an embodiment of a cross-section along the minor axis of a laser beam emitted from a laser device according to the present invention.

[0044] (Explanation of reference numerals in the attached diagram)

[0045] 100: Laser generator; 200: Beam quality factor conversion unit

[0046] 210: First sidewall 220: Second sidewall

[0047] 300: Telescope lens section; 310: First lens array

[0048] 320: Second lens array; 330: Third lens array

[0049] 340: Fourth lens array; 400: Homogenization section

[0050] 410: First homogenizing lens; 420: Second homogenizing lens

[0051] 430: Condensing lens 500: Condensing lens

[0052] 600: Worktable; LB: Laser Beam

[0053] LB1, LB2, LB3, LB4: First to fourth laser beams Detailed Implementation

[0054] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and repeated descriptions of the same components are omitted.

[0055] Figure 1 This is a plan view illustrating a display device according to an embodiment of the present invention.

[0056] Reference Figure 1 The display device DD may include a display area DA and a non-display area NDA. The non-display area NDA may surround the display area DA.

[0057] Multiple pixels P can be configured in the display area DA. The multiple pixels P can be configured as a whole in the display area DA. For example, the multiple pixels P can be configured in a matrix form in the display area DA. However, this is merely illustrative, and the configuration of the multiple pixels P is not limited to this.

[0058] The display device DD can display dynamic or static images through the display area DA. A driving unit for driving the display area DA can be configured in the non-display area NDA. Although the display device DD is shown in a rectangular shape, it is not limited to this. For example, the display device DD can have a vertically elongated rectangle, a square, a rectangle with rounded corners (vertices), other polygons, circles, etc.

[0059] Figure 2 It shows along Figure 1 A cross-sectional view of an embodiment taken by the I-I' line.

[0060] Reference Figure 2 The display device DD may include a substrate 10, a buffer layer 15, a first gate insulating layer 20, a first interlayer insulating layer 25, a second interlayer insulating layer 30, a second gate insulating layer 35, a third interlayer insulating layer 40, a via insulating layer 45, a pixel defining film (PDL), a first transistor TFT1, a second transistor TFT2, and an organic light-emitting diode (OLED). The first transistor TFT1 may include a first active layer 17, a first gate electrode 23, a capacitor electrode 27, a first source electrode 41, and a first drain electrode 42. The second transistor TFT2 may include a second active layer 33, a second gate electrode 37, a second source electrode 43, and a second drain electrode 44. The organic light-emitting diode (OLED) may include a lower electrode 50, a light-emitting layer 55, and an upper electrode 60.

[0061] The substrate 10 can support the layers disposed on top. The substrate 10 can be made of insulating materials such as polymer resin or inorganic materials such as glass or quartz.

[0062] A buffer layer 15 may be disposed on the substrate 10. The buffer layer 15 can prevent impurities from penetrating into the first and second transistors TFT1 and TFT2. Alternatively, when the substrate 10 is not planar, the buffer layer 15 can planarize the substrate 10. The buffer layer 15 may contain silicon nitride, silicon oxide, or silicon oxide nitride, etc.

[0063] The first active layer 17 may be disposed on the buffer layer 15. The first active layer 17 can function as the channel of the first transistor TFT 1. The first active layer 17 may contain a silicon-based semiconductor material. In an embodiment, the silicon-based semiconductor material may be polycrystalline silicon formed by crystallizing amorphous silicon. To crystallize the amorphous silicon, a crystallization process using a laser beam can be performed. To improve the performance of the first transistor TFT 1, the crystallization process of the first active layer 17 needs to be performed efficiently. Therefore, the laser beam used for the crystallization process needs to have high uniformity.

[0064] The first gate insulating layer 20 may be disposed on the first active layer 17. The first gate insulating layer 20 may comprise silicon compound, metal oxide, etc.

[0065] The first gate electrode 23 may be disposed on the first gate insulating layer 20. The first gate electrode 23 may receive gate signals or the like input through the driving unit. For this purpose, the first gate electrode 23 may comprise a metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, or the like.

[0066] The first interlayer insulating layer 25 may be disposed on the first gate electrode 23. The first interlayer insulating layer 25 may comprise silicon compound, metal oxide, etc.

[0067] The capacitor electrode 27 may be disposed on the first interlayer insulating layer 25. The capacitor electrode 27 may form a capacitor together with the first gate electrode 23.

[0068] A second interlayer insulating layer 30 may be disposed on the capacitor electrode 27. The second interlayer insulating layer 30 may comprise silicon compounds, metal oxides, etc.

[0069] A second active layer 33 may be disposed on the second interlayer insulating layer 30. The second active layer 33 may function as the channel of the second transistor TFT2. The second active layer 33 may contain an oxide semiconductor material.

[0070] A second gate insulating layer 35 may be disposed on the second active layer 33. The second gate insulating layer 35 may comprise silicon compound, metal oxide, etc.

[0071] A second gate electrode 37 may be disposed on the second gate insulating layer 35. The second gate electrode 37 may receive gate signals or the like input through the driving unit. For this purpose, the second gate electrode 37 may comprise a metal, alloy, metal nitride, conductive metal oxide, transparent conductive material, or the like.

[0072] The third interlayer insulating layer 40 may be disposed on the second gate electrode 37. The third interlayer insulating layer 40 may comprise silicon compound, metal oxide, etc.

[0073] A first source electrode 41, a second source electrode 43, a first drain electrode 42, and a second drain electrode 44 may be disposed on the third interlayer insulating layer 40. The first source electrode 41 and the first drain electrode 42 can be connected to the first active layer 17 through contact holes. The second source electrode 43 and the second drain electrode 44 can be connected to the second active layer 33 through contact holes. The source electrodes 41, 43 and the drain electrodes 42, 44 may contain conductive materials such as molybdenum (Mo), copper (Cu), aluminum (Al), and titanium (Ti).

[0074] The via insulating layer 45 may be disposed on the source electrodes 41, 43 and the drain electrodes 42, 44. The via insulating layer 45 may contain an organic insulating material such as polyimide (PI).

[0075] The lower electrode 50 may be disposed on the via insulating layer 45. The lower electrode 50 may be connected to the first drain electrode 42 through a contact hole. The lower electrode 50 may contain conductive materials such as metals, alloys, or transparent conductive oxides.

[0076] The pixel defining film (PDL) can be disposed on the via insulating layer 45. The PDL can cover a portion of the lower electrode 50 and have an opening that exposes the upper surface of the lower electrode 50. The PDL can be formed of an organic insulating material such as polyimide (PI).

[0077] The light-emitting layer 55 may be disposed on the lower electrode 50. The light-emitting layer 55 may be disposed on the lower electrode 50 exposed through the opening. In an embodiment, the light-emitting layer 55 may comprise at least one of an organic light-emitting material and a quantum dot.

[0078] The upper electrode 60 may be disposed on the light-emitting layer 55. In an embodiment, the upper electrode 60 may also be disposed on the pixel defining film (PDL). The upper electrode 60 may be formed of a conductive material such as a metal, alloy, or transparent conductive oxide. For example, the conductive material may include aluminum (Al), platinum (Pt), silver (Ag), magnesium (Mg), gold (Au), chromium (Cr), tungsten (W), titanium (Ti), etc.

[0079] Figure 3 This is a flowchart illustrating the movement path of a laser beam emitted from a laser device according to an embodiment of the present invention. In the embodiment, Figure 3 The laser device can be used for crystallization Figure 2 The first active layer is 17.

[0080] Reference Figure 3 The laser device LD may include a laser generator 100, a beam quality factor conversion unit 200, a telescope lens unit 300, a homogenization unit 400, and a condenser lens 500. The laser beam LB emitted from the laser device LD can illuminate the worktable 600.

[0081] The laser generator 100 can emit a first laser beam LB1. The laser generator 100 can emit at least one first laser beam LB1. For example, the laser generator 100 can emit one or more first laser beams LB1 as needed. The first laser beam LB1 can be linear. The first laser beam LB1 can form a beam spot in the irradiated surface. The first laser beam LB1 can have a Gaussian energy distribution with high energy in the center.

[0082] In this embodiment, the laser generator 100 can emit excimer laser beams, YAG laser beams, glass laser beams, YVO4 laser beams, Ar laser beams, ruby ​​laser beams, etc. However, it is not limited to these; in addition to the laser beams mentioned above, the laser generator 100 can also emit various laser beams capable of crystallizing amorphous silicon.

[0083] The beam quality factor conversion unit 200 can emit a first laser beam LB1 by converting its major and minor axis dimensions. The major and minor axes of the first laser beam LB1 can be perpendicular to each other. In an embodiment, the beam quality factor conversion unit 200 can change the beam quality factor of the first laser beam LB1 in the major axis direction and the beam quality factor in the minor axis direction. The beam quality factor conversion unit 200 can improve the uniformity of the first laser beam LB1. The beam quality factor conversion unit 200 can emit a second laser beam LB2 that converts the major and minor axis dimensions of the first laser beam LB1.

[0084] Typically, a laser beam can travel in a Gaussian shape. The spot size (2w0) of the laser beam can be defined as the size corresponding to twice the radius (w0) at the beam waist. The beam waist can be considered as the region where the diameter of the first laser beam reaches its minimum value due to diffraction. The spot size (2w0) can be based on the wavelength (λ) of the laser beam, the size (D) of the laser beam incident on the lens, the focal length (F) of the lens, and the beam quality factor (M). 2 The relationship is determined by the following [Equation 1].

[0085] [Formula 1]

[0086]

[0087] Referring to Equation 1, if the beam quality factor (M) is reduced while maintaining the size (D) of the laser beam and the focal length (F) of the lens... 2 This can reduce the spot size (2w0). The beam quality factor (M) 2The beam quality factor (M) is a quantitative numerical representation of the focusing characteristics of a laser beam, and can be a scale representing the degree of variation from a laser beam with an idealized Gaussian shape. 2 The closer the beam quality factor (M) is to 1, the better. 2 The beam quality factor (Mx) can have various values ​​depending on the direction. For example, a laser beam can have a major axis in the x-axis direction and a minor axis in the y-axis direction perpendicular to the x-axis. In this case, the laser beam can have a major axis beam quality factor (Mx) for the major axis direction. 2 ), and has a short-axis beam quality factor (My) for the short-axis direction. 2 For example, even by simply increasing or decreasing the size of the laser beam, the long-axis beam quality factor (Mx) remains unchanged. 2 ) and short-axis beam quality factor (My 2 The long-axis beam quality factor (Mx) can also remain unchanged. When the laser beam is rearranged by the beam quality factor conversion unit 200, the long-axis beam quality factor (Mx) remains unchanged. 2 ) and the short-axis beam quality factor (My 2 (It can change.)

[0088] In an embodiment, the telescope lens section 300 can adjust the minor axis dimension of the second laser beam LB2. For example, the telescope lens section 300 can increase or decrease the minor axis dimension of the second laser beam LB2. The telescope lens section 300 may include multiple lenses. The telescope lens section 300 can emit a third laser beam LB3 that adjusts the minor axis dimension of the second laser beam LB2.

[0089] In this embodiment, the homogenization unit 400 can homogenize the third laser beam LB3 along its long axis. The homogenization unit 400 may include a homogenization lens, a focusing lens, etc. The homogenization lens may include multiple lenses. The homogenization unit 400 can emit a fourth laser beam LB4 that homogenizes the third laser beam LB3 along its long axis.

[0090] The focusing lens 500 can focus the fourth laser beam LB4 in the minor axis direction before it shines onto the worktable 600. The focusing lens 500 can increase the energy density of the fourth laser beam LB4. The focusing lens 500 can emit the laser beam LB.

[0091] Figure 4 This is a perspective view showing a laser device according to an embodiment of the present invention.

[0092] Reference Figure 4An amorphous silicon thin film 610 may be disposed on the stage 600. The amorphous silicon thin film 610 may be disposed on the stage 600 together with other components, rather than separately. For example, the amorphous silicon thin film 610 may be disposed on the stage 600 in a state where it is disposed on the substrate 10. The material crystallized by the laser device LD is not limited to the amorphous silicon thin film 610. For example, the material may be an amorphous semiconductor layer that includes other materials besides silicon.

[0093] The laser device LD can irradiate the amorphous silicon thin film 610 with a laser beam LB. For example, the laser device LD can irradiate the laser beam LB while moving in the second direction DR2. Alternatively, the stage 600 can move in the opposite direction to the second direction DR2, and the laser device LD irradiates the laser beam LB while in a fixed state.

[0094] The amorphous silicon thin film 610 can be crystallized into a polycrystalline silicon thin film 620 by a laser beam LB. For example, the polycrystalline silicon thin film 620 can correspond to the first active layer 17. Effective crystallization of the amorphous silicon thin film 610 may require a large amount of energy. Therefore, it is preferable that the greater the energy provided per unit area of ​​the region irradiated by the laser beam LB, the better. Furthermore, for effective crystallization of the amorphous silicon thin film 610, a uniform laser beam LB is required.

[0095] The laser beam LB can be emitted as a line extending in one direction. In an embodiment, the laser beam LB can be emitted in a third direction DR3 perpendicular to the second direction DR2. The linear shape of the laser beam LB can extend in both the emission direction, i.e., the third direction DR3, and the first direction DR1 perpendicular to the second direction DR2. The first direction DR1 can be the major axis direction of the laser beam LB. The length of the laser beam LB in the major axis direction can be defined as the major axis dimension Dx. The larger the major axis dimension Dx, the wider the area of ​​the amorphous silicon thin film 610 can be crystallized in a single pass by the laser device LD. The major axis dimension Dx can be determined by an optical system included in the laser device LD.

[0096] Additionally, the second direction DR2 can be the minor axis direction of the laser beam LB. The length of the laser beam LB in the minor axis direction can be defined as the minor axis dimension Dy. The smaller the minor axis dimension Dy, the more effectively the laser device LD can irradiate the amorphous silicon thin film 610 with a larger energy per unit area.

[0097] The laser beam LB emitted from the laser device LD can provide maximum energy at its focal point. Therefore, for effective crystallization of silicon, it is preferable that the focal point of the laser beam LB is formed inside the amorphous silicon thin film 610. For example, the focal point of the laser beam LB can be located at the center in the thickness direction inside the amorphous silicon thin film 610, but is not limited thereto. The focal point of the laser beam LB can also be located on one side or the other side closer to the third direction DR3 than the center in the thickness direction of the amorphous silicon thin film 610.

[0098] In one embodiment, to adjust the position of the focal point of the laser beam LB formed in the amorphous silicon thin film 610, the laser device LD can be moved toward the third direction DR3. This allows adjustment of the distance between the focusing lens, which increases the energy density of the laser beam LB before irradiation, and the stage 600. Alternatively, in another embodiment, the stage 600 can also be moved toward the third direction DR3 to adjust the position of the focal point.

[0099] Figure 5 This is a schematic diagram illustrating one embodiment of a laser beam passing through a beam quality factor conversion section. Figure 6a as well as Figure 6b It is shown Figure 5 A figure showing an embodiment of the beam quality factor conversion unit. Figure 7 as well as Figure 8 This is a diagram illustrating an embodiment of a laser beam being partially segmented by a beam quality factor conversion.

[0100] Reference Figure 3 , Figure 5 , Figure 6a , Figure 6b , Figure 7 as well as Figure 8 A first laser beam LB1 emitted from the laser generator 100 can be incident on the beam quality factor conversion unit 200 along the third direction DR3. In this case, the first laser beam LB1 can have a minor axis dimension Dx1 and a major axis dimension Dy1. The first laser beam LB1, which is linear in shape extending in the second direction DR2, can be emitted from the beam quality factor conversion unit 200 as a second laser beam LB2, which is linear in shape extending in the first direction DR1.

[0101] In one embodiment, the beam quality factor conversion unit 200 can repeatedly reflect the first laser beam LB1. The beam quality factor conversion unit 200 can sequentially emit sub-beams of a certain size by simultaneously shifting the position of the reflected first laser beam LB1 by a certain distance and then splitting it. For this purpose, the beam quality factor conversion unit 200 can include multiple reflectors. The reflectors can be disposed in the beam quality factor conversion unit 200 on the first sidewall 210 and the second sidewall 220.

[0102] In an embodiment, the beam quality factor conversion unit 200 may not be perpendicular to the third direction DR3. For example, the first sidewall 210 and the second sidewall 220 may not be perpendicular to the third direction DR3. In other words, the beam quality factor conversion unit 200 may be configured to rotate around a virtual axis formed in the second direction DR2. Consequently, the first laser beam LB1 incident on the beam quality factor conversion unit 200 can be reflected by mirrors configured on the first sidewall 210 and the second sidewall 220 and moved in the opposite direction to the first direction DR1. Therefore, the length of the second laser beam LB2 in the first direction DR1 may be longer than the length of the first laser beam LB1 in the first direction DR1.

[0103] Furthermore, the beam quality factor conversion unit 200 can be configured to rotate around a virtual axis extending in the first direction DR1. Consequently, the first laser beam LB1 incident on the beam quality factor conversion unit 200 can be reflected by mirrors disposed on the first sidewall 210 and the second sidewall 220 and moved in the opposite direction to the second direction DR2. Therefore, the length of the second laser beam LB2 in the second direction DR2 can be shorter than the length of the first laser beam LB1 in the second direction DR2.

[0104] For example, the beam quality factor conversion unit 200 can split the first laser beam LB1 into six sub-beams in the second direction DR2. The beam quality factor conversion unit 200 can then arrange the six sub-beams in the first direction DR1 and emit a second laser beam LB2.

[0105] Therefore, the beam quality factor conversion unit 200 can change the long axis beam quality factor (Mx) of the first laser beam LB1. 2 ) and short-axis beam quality factor (My 2 Additionally, the beam quality factor conversion unit 200 can convert the major axis dimension Dy1 and the minor axis dimension Dx1 of the first laser beam LB1.

[0106] Figure 9 This is a block diagram illustrating one embodiment of the telescope lens section. Figure 10a , Figure 10b as well as Figure 10c This is a cross-sectional view showing an embodiment of a lens included in a telephoto lens section.

[0107] Reference Figure 3 , Figure 9 as well as Figure 10a , Figure 10b as well as Figure 10cThe telescope lens section 300 can adjust the size of the second laser beam LB2. In an embodiment, the telescope lens section 300 can adjust the size of the second laser beam LB2 in the minor axis direction. The telescope lens section 300 may include a first lens array 310 and a second lens array 320.

[0108] The first lens array 310 may include first to nth incident lenses 310a to 310n (where n is a natural number greater than 2). In an embodiment, the first to nth incident lenses 310a to 310n may have a shape with a convex incident surface and a planar exit surface. The second laser beam LB2 may be refracted in the first to nth incident lenses 310a to 310n in the second direction DR2 and then dispersed after being focused. In an embodiment, the first to nth incident lenses 310a to 310n may be spaced apart in the first direction DR1.

[0109] In an embodiment, the laser device LD may further include a beamsplitter for splitting the second laser beam LB2. Additionally, it may include a beammirror for altering the path of the split second laser beam LB2. Thus, the second laser beam LB2 can be incident on the first to the nth incident lenses 310a to 310n, respectively.

[0110] In an embodiment, when there are multiple laser beams emitted from the laser generator 100, the multiple second laser beams LB2 can be incident on the first to nth incident lenses 310a to 310n respectively, without the need for the beam splitter and the beam mirror.

[0111] The second lens array 320 may include first to m-th exiting lenses 320a to 320m (where m is a natural number greater than 2). In an embodiment, the first to m-th exiting lenses 320a to 320m may have a shape with a planar incident surface and a convex exit surface. The second laser beam LB2 may be refracted by the first to n-th incident lenses 310a to 310n. The first to m-th exiting lenses 320a to 320m may refract the second laser beam LB2 diffused in the second direction DR2 to emit a third laser beam LB3 parallel to the third direction DR3. The size of the third laser beam LB3 in the second direction DR2 may be different from the size of the second laser beam LB2 in the second direction DR2. In an embodiment, the first to m-th exiting lenses 320a to 320m may be spaced apart in the first direction DR1.

[0112] In this embodiment, the aberrations of the first to nth incident lenses 310a-310n may differ from the aberrations of the first to mth exiting lenses 320a-320m. These aberrations can vary depending on the thickness, curvature, etc., of each lens.

[0113] In this embodiment, the number of the first to nth incident lenses 310a-310n and the number of the first to mth exiting lenses 320a-320m may be different. The laser device LD may also include the beam splitter and the beam mirror. Thus, the second laser beam LB2 emitted from the first to nth incident lenses 310a-310n can all be incident on the first to mth exiting lenses 320a-320m.

[0114] In one embodiment, the lens may have a length in the second direction DR2 and a thickness in the third direction DR3.

[0115] Thus, the telescope lens 300 can adjust the size of the laser beam in the second direction DR2 while maintaining the same size in the first direction DR1.

[0116] In this embodiment, the curvatures of the first to nth incident lenses 310a-310n can be the same. The curvature of at least one of the first to mth exiting lenses 320a-320m can be different from the curvatures of the remaining exiting lenses. With the curvature of at least one exiting lens being different, the telescope lens section 300 can adjust the aberrations for the second direction DR2. Therefore, the uniformity of the third laser beam LB3 can be improved by adjusting the formation position of the focal point of the third laser beam LB3 passing through the telescope lens section 300.

[0117] In this embodiment, the curvatures of the first to m exiting lenses 320a-320m can be the same. The curvature of at least one of the first to nth incident lenses 310a-310n can be different from the curvatures of the remaining incident lenses. With the curvature of at least one incident lens being different, the telescope lens section 300 can adjust the aberrations for the second direction DR2. Therefore, the uniformity of the third laser beam LB3 can be improved by adjusting the focal point formation position of the third laser beam LB3 passing through the telescope lens section 300 differently.

[0118] In this embodiment, the thicknesses of the first to nth incident lenses 310a-310n can each be the same. The thickness of at least one of the first to mth exiting lenses 320a-320m can be different from the thicknesses of the remaining exiting lenses. With the varying thickness of at least one exiting lens, the telescope lens section 300 can adjust the aberrations for the second direction DR2. Therefore, the uniformity of the third laser beam LB3 can be improved by adjusting the focal point formation position of the third laser beam LB3 passing through the telescope lens section 300 differently.

[0119] In this embodiment, the thicknesses of the first to m exiting lenses 320a-320m can each be the same. The thickness of at least one of the first to n incident lenses 310a-310n can be different from the thicknesses of the remaining incident lenses. With the varying thickness of at least one incident lens, the telescope lens section 300 can adjust the aberrations for the second direction DR2. Therefore, the uniformity of the third laser beam LB3 can be improved by adjusting the focal point formation position of the third laser beam LB3 passing through the telescope lens section 300 differently.

[0120] However, as an example, the telescope lens section 300 can use lenses with different thicknesses and curvatures, thereby improving the uniformity of the third laser beam LB3 by adjusting the focal point formation position of the third laser beam LB3 differently.

[0121] exist Figure 10a The diagram shows an increase in the size of the second direction DR2 of the second laser beam LB2, but this is illustrative and not limited to this. For example, the size of the second direction DR2 of the second laser beam LB2 may also decrease after passing through the telescope lens section 300.

[0122] In addition, Figure 10a The image shows lenses 310a and 320a separated by a first distance 'a', but this is illustrative and not limited to this. For example, as... Figure 10b As shown, lenses 310a and 320a can be separated by a second distance b, which is shorter than the first distance a. In this case, the third laser beam LB emitted from the first emitting lens 320a can increase in size in the second direction DR2 as it travels towards the third direction DR3.

[0123] In addition, such as Figure 10c As shown, lenses 310a and 320a can be separated by a third distance c that is longer than the first distance a. In this case, the third laser beam LB emitted from the first emitting lens 320a can decrease in size in the second direction DR2 as it travels towards the third third direction DR3. Figure 11 This is a plan view showing one embodiment of the homogenization section.

[0124] Reference Figure 3 as well as Figure 11 The homogenization section 400 may include a first homogenization lens 410, a second homogenization lens 420, and a condenser lens 430. The homogenization section 400 may receive a third laser beam LB3 having a Gaussian-shaped energy distribution in the first direction DR1 and homogenize it in the first direction DR1.

[0125] The first homogenizing lens 410 may have a convex incident surface and a flat exit surface. The first homogenizing lens 410 may be a structure consisting of multiple lenses connected in series. The third laser beam LB3 can be refracted by the first homogenizing lens 410.

[0126] A second homogenizing lens 420 may be disposed on the back side of the first homogenizing lens 410. The second homogenizing lens 420 may have a planar incident surface and a convex exit surface. The second homogenizing lens 420 may be a structure in which multiple lenses are continuously connected. The focal point of the first homogenizing lens 410 may be formed between the first homogenizing lens 410 and the second homogenizing lens 420. However, in an embodiment, the focal point of the first homogenizing lens 410 may be formed either inside the second homogenizing lens 420 or beyond the second homogenizing lens 420. The third laser beam LB3 refracted by the first homogenizing lens 410 may be focused at the focal point of the first homogenizing lens 410 and then dispersed again before entering the second homogenizing lens 420.

[0127] The condenser lens 430 may be disposed on the back side of the second homogenizing lens 420. The condenser lens 430 may have a planar incident surface and a convex exit surface. The condenser lens 430 can refract the third laser beam LB3, which diffuses in the first direction DR1, into a fourth laser beam LB4 parallel to the third direction DR3. The fourth laser beam LB4 emitted from the condenser lens 430 may have a uniform energy distribution in the first direction DR1.

[0128] In an embodiment, the size of the fourth laser beam LB4 in the first direction DR1 can be larger than the size of the third laser beam LB3 in the first direction DR1.

[0129] The fourth laser beam LB4 emitted from the homogenization section 400 can be incident on the condenser lens 500. In an embodiment, the fourth laser beam LB4 emitted from the homogenization section 400 can pass through the beam mirror and / or the beam splitter before being incident on the condenser lens 500. The condenser lens 500 can shorten the size of the fourth laser beam LB4 in the second direction DR2. Therefore, the condenser lens 500 can increase the energy density of the fourth laser beam LB4.

[0130] Figure 12 This is a block diagram illustrating one embodiment of the telescope lens section.

[0131] Reference Figure 3 as well as Figure 12 The telescope lens section 300 may include a third lens array 330 and a fourth lens array 340. The third lens array 330 may include first to k-th incident lenses 330a to 330k. In addition, the fourth lens array 340 may include first to k-th exit lenses 340a to 340k (where k is a natural number greater than 2).

[0132] In this embodiment, the curvature and thickness of the first to kth incident lenses 330a-330k and the first to kth exiting lenses 340a-340k can be the same. The uniformity of the third laser beam LB3 emitted from the telescope lens section 300 can be improved by adjusting the distance between the first to kth incident lenses 330a-330k and the first to kth exiting lenses 340a-340k.

[0133] In an embodiment, the first to k incident lenses 330a to 330k and the first to k exit lenses 340a to 340k can be arranged opposite to each other. For example, the p-th incident lens 330p and the p-th exit lens 340p can be arranged facing each other (where p is a natural number greater than or equal to 1 and less than or equal to k).

[0134] In an embodiment, at least one of the distances between the first to k incident lenses 330a-330k and the first to k exit lenses 340a-340k can be different from the remaining distances. For example, the distance between the first incident lens 330a and the first exit lens 340a can be different from the distance between the second incident lens 330b and the second exit lens 340b. Therefore, the uniformity of the third laser beam LB3 can be improved by adjusting the focal point formation position of the third laser beam LB3 passing through the telescope lens section 300.

[0135] Thus, the laser device LD according to the present invention can reduce the beam quality factor of the laser beam in the minor axis direction through the beam quality factor conversion unit 200. Consequently, the laser device LD can improve the uniformity of the laser beam in the minor axis direction.

[0136] Furthermore, the telescope lens section 300 includes lenses with different aberrations, thereby allowing for different adjustments to the focal point formation position of the laser beam emitted from the telescope lens section 300. As a result, the laser device LD can achieve laser beam homogenization in the minor axis direction. Therefore, the laser device LD can achieve laser beam homogenization without a homogenization section for the minor axis direction.

[0137] Figure 13 This is a diagram showing an embodiment of a cross-section along the minor axis of a laser beam emitted from a laser device according to the present invention.

[0138] Reference Figure 13 A laser device according to an embodiment of the present invention may include a beam quality factor conversion unit and a telescope lens unit. The telescope lens unit may include a first lens array and a second lens array with aberrations different from those of the first lens array. Alternatively, the lenses of the first lens array and the lenses of the second lens array may be arranged with different spacings from each other.

[0139] Therefore, the laser device can emit a uniform laser beam by adjusting the focal point of the laser beam. Amorphous silicon can be effectively crystallized using this laser device.

[0140] For example, such as Figure 13 As shown in (a), in the prior art, when the laser beam defocuses, the uniformity of the laser beam in the minor axis direction decreases. Conversely, as... Figure 13 As shown in (b), the laser device according to an embodiment of the present invention can ensure the uniformity of the laser beam in the minor axis direction even when the laser beam is defocused.

[0141] In the foregoing, exemplary embodiments of the present invention have been described with reference to them; however, those skilled in the art will understand that various modifications and alterations can be made to the present invention without departing from the concept and scope of the invention as set forth in the claims.

[0142] (Industry availability)

[0143] This invention can be applied to laser devices, etc. For example, the laser device can be used in the manufacture of smartphones, tablets, laptops, and monitors that utilize laser beams.

Claims

1. A laser device, wherein, include: A laser generator emits a laser beam; The beam quality factor conversion unit splits the laser beam emitted from the laser generator into multiple sub-beams in a first direction intersecting the emission direction, and arranges and emits the multiple sub-beams in a second direction intersecting the emission direction and the first direction. The telescope lens section adjusts the size of the laser beam emitted from the beam quality factor conversion section in the first direction, and includes a first lens array having a first to nth incident lens and a second lens array having a first to mth exiting lens with a different aberration than the first lens array, wherein m and n are natural numbers greater than or equal to 1. as well as A focusing lens focuses the laser beam emitted from the telescope lens section in the first direction.

2. The laser device according to claim 1, characterized in that, The curvatures of the first through nth incident lenses are the same.

3. The laser device according to claim 2, characterized in that, The curvature of at least one of the first to m-th exiting lenses is different from the curvature of the remaining exiting lenses other than the at least one exiting lens.

4. The laser device according to claim 1, characterized in that, The curvatures of the first through m exiting lenses are the same.

5. The laser device according to claim 4, characterized in that, The curvature of at least one of the first to nth incident lenses is different from the curvature of the remaining incident lenses other than the at least one incident lens.

6. The laser device according to claim 1, characterized in that, The thicknesses of the first to the nth incident lenses are the same.

7. The laser device according to claim 6, characterized in that, The thickness of at least one of the first to m-th exiting lenses is different from the thickness of the remaining exiting lenses other than the at least one exiting lens.

8. The laser device according to claim 1, characterized in that, The thicknesses of the first through m exiting lenses are the same.

9. The laser device according to claim 8, characterized in that, The thickness of at least one of the first to nth incident lenses is different from the thickness of the remaining incident lenses other than the at least one incident lens.

10. The laser device according to claim 1, characterized in that, The laser beam, focused in the condenser lens, illuminates the worktable. The focusing lens can move in the direction in which the laser beam illuminates the worktable.

Images