Substrate processing apparatus and substrate processing method

Abstract

The present disclosure relates to a substrate processing apparatus and a substrate processing method. A bonding apparatus includes a first holding portion, a second holding portion, and a moving mechanism. The first holding portion is configured to hold a first substrate from above the first substrate. The second holding portion is configured to hold a second substrate from below the second substrate. The moving mechanism is configured to move a relative position of the first holding portion and the second holding portion between a substrate handover position and a bonding position. The control apparatus causes the conveyance apparatus to reach the substrate in-out position after the conveyance apparatus starts moving from a substrate in-out position with respect to the bonding apparatus, or before the relative position of the first holding portion and the second holding portion returns to the substrate handover position, while the relative position of the first holding portion and the second holding portion returns to the substrate handover position simultaneously.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a substrate processing method. Background Technology

[0002] The bonding system described in Patent Documents 1-3 bonds a first substrate and a second substrate to create an overlapping substrate. The bonding system includes a surface modification apparatus, a surface hydrophilization apparatus, a bonding apparatus, and a conveying apparatus. The surface modification apparatus modifies the first and second substrates. The surface hydrophilization apparatus hydrophilizes the modified first and second substrates. The bonding apparatus bonds the hydrophilized first substrate and the second substrate to create the overlapping substrate. The conveying apparatus transports the first substrate, the second substrate, and the overlapping substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-10922

[0006] Patent Document 2: Japanese Patent Application Publication No. 2018-26414

[0007] Patent Document 3: Japanese Patent Application Publication No. 2018-93018 Summary of the Invention

[0008] The problem the invention aims to solve

[0009] One aspect of this disclosure provides a technique for increasing the throughput of a substrate processing apparatus.

[0010] Solution for solving the problem

[0011] One aspect of this disclosure relates to a substrate processing apparatus comprising a bonding device, a conveying device, and a control device. The bonding device is used to bond a first substrate and a second substrate to create an overlapping substrate. The conveying device is used to move the first substrate and the second substrate into and out of the bonding device. The control device is used to control the bonding device and the conveying device. The bonding device includes a first holding portion, a second holding portion, and a moving mechanism. The first holding portion is used to hold the first substrate from above. The second holding portion is used to hold the second substrate from below. The moving mechanism is used to move the relative positions of the first holding portion and the second holding portion between a substrate junction position and a bonding position. The control device causes the conveying device to arrive at the substrate junction position simultaneously with the return of the relative positions of the first holding portion and the second holding portion to the substrate junction position after the conveying device begins to move from the substrate junction position relative to the bonding device, or to arrive at the substrate junction position before the relative positions of the first holding portion and the second holding portion return to the substrate junction position.

[0012] The effects of the invention

[0013] According to one aspect of this disclosure, the throughput of a substrate processing apparatus can be increased. Attached Figure Description

[0014] Figure 1 This is a top view of a substrate processing apparatus according to one embodiment.

[0015] Figure 2 yes Figure 1 Front view of the substrate processing apparatus.

[0016] Figure 3 This is a side view showing an example of the first substrate and the second substrate.

[0017] Figure 4 This is a flowchart illustrating a substrate processing method according to one embodiment.

[0018] Figure 5 This is a side view showing an example of a conveying device.

[0019] Figure 6 This is a side view showing an example of a position adjustment device.

[0020] Figure 7 This is a top view showing an example of a connecting device.

[0021] Figure 8 yes Figure 7 Front cross-sectional view of the coupling device.

[0022] Figure 9 It means Figure 7 Front cross-sectional view of the first and second retaining parts.

[0023] Figure 10 It means Figure 4 The flowchart details step S109.

[0024] Figure 11 (A) is a cross-sectional view showing an example of the beginning of the joint's progress. Figure 11 (B) is a cross-sectional view showing an example of the progress of the joint. Figure 11 (C) is a cross-sectional view representing an example of the progress of the joint being completed.

[0025] Figure 12 This is a top view illustrating anisotropy in the rate of progress of the joint.

[0026] Figure 13 This is a cross-sectional view showing an example of a nozzle.

[0027] Figure 14 This is a flowchart of the first example of timing for sending a preparation command to the conveying device.

[0028] Figure 15 This is a flowchart of the second example of timing for sending a preparation command to the conveying device.

[0029] Figure 16 This is a flowchart of the third example, representing the timing of sending a preparation command to the conveying device.

[0030] Explanation of reference numerals in the attached figures

[0031] 1: Substrate processing apparatus; 41: Bonding apparatus; 61: Conveying apparatus; 90: Control apparatus; 230: Upper suction cup (first holding part); 231: Lower suction cup (second holding part); 250: Pushing part; 290: Moving mechanism; W1: Upper wafer (first substrate); W2: Lower wafer (second substrate); T: Overlapping substrate. Detailed Implementation

[0032] The embodiments of this disclosure will now be described with reference to the accompanying drawings. Furthermore, identical or corresponding structures are labeled with the same reference numerals in the drawings, and descriptions are sometimes omitted. Additionally, the X-axis, Y-axis, and Z-axis are perpendicular to each other; the X-axis and Y-axis are horizontal; and the Z-axis is vertical.

[0033] First, refer to Figure 1 and Figure 2The substrate processing apparatus 1 according to this embodiment will be described below. The substrate processing apparatus 1 is used to bond a first substrate W1 and a second substrate W2 to fabricate a composite substrate T. The first substrate W1 is, for example, a substrate on which multiple electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. The second substrate W2 is, for example, a bare wafer on which no electronic circuits are formed. Alternatively, the second substrate W2 may also be a substrate on which electronic circuits are formed, similar to the first substrate W1. The first substrate W1 and the second substrate W2 have approximately the same diameter. The compound semiconductor wafer is, for example, a GaAs wafer, a SiC wafer, a GaN wafer, or an InP wafer, but is not particularly limited thereto.

[0034] Hereinafter, the first substrate W1 is sometimes referred to as "upper wafer W1", the second substrate W2 as "lower wafer W2", and the overlapping substrate T as "overlapping wafer T". For example... Figure 3 As shown, the side of the upper wafer W1 that is to be bonded to the lower wafer W2 is designated as "bonding surface W1j", and the side opposite to the bonding surface W1j is designated as "non-bonding surface W1n". Similarly, the side of the lower wafer W2 that is to be bonded to the upper wafer W1 is designated as "bonding surface W2j", and the side opposite to the bonding surface W2j is designated as "non-bonding surface W2n".

[0035] like Figure 1 As shown, the substrate processing apparatus 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged in the positive X-axis direction in the order of loading / unloading station 2 and processing station 3. In addition, the loading / unloading station 2 and the processing station 3 are connected as one unit.

[0036] The loading / unloading station 2 includes a loading stage 10 and a transport area 20. The loading stage 10 includes multiple loading plates 11. Each loading plate 11 holds boxes C1, C2, and C3 that horizontally house multiple (e.g., 25) substrates. Box C1 houses the upper wafer W1, box C2 houses the lower wafer W2, and box C3 houses the overlapping wafer T. Furthermore, in boxes C1 and C2, the upper wafer W1 and the lower wafer W2 are housed with their mating surfaces W1j and W2j as the upper surfaces and in the same orientation.

[0037] The transport area 20 is disposed adjacent to the mounting stage 10 on the positive X-axis side. A transport path 21 extending along the Y-axis and a transport device 22 capable of moving along the transport path 21 are provided in the transport area 20. The transport device 22 is also capable of moving along the X-axis and rotating about the Z-axis. The transport device 22 is used to transport the upper wafer W1, lower wafer W2, and overlapping wafer T between the cassettes C1 to C3 mounted on the mounting stage 10 and the third processing block G3 of the processing station 3 (described later).

[0038] Furthermore, the number of boxes C1 to C3 placed on the mounting stage 10 is not limited to the number shown in the figure. In addition to boxes C1, C2, and C3, boxes for recycling problematic substrates can also be placed on the mounting stage 10.

[0039] For example, processing station 3 has three processing blocks G1, G2, and G3. For example, on the back side of processing station 3 ( Figure 1 The first processing block G1 is set on the positive Y-axis side of the processing station 3. Figure 1 A second processing block G2 is installed on the negative Y-axis side. Additionally, on the side of processing station 3 adjacent to loading / unloading station 2 ( Figure 1 Set the third processing block G3 on the negative X-axis side.

[0040] Furthermore, a transport area 60 is formed in the region surrounded by the first processing blocks G1 to the third processing blocks G3. A transport device 61 is disposed in the transport area 60. The transport device 61 has, for example, a transport arm that is movable freely in the vertical and horizontal directions and about a vertical axis. Further details regarding the transport device 61 will be provided later. Figure 5 To narrate.

[0041] The conveying device 61 moves within the conveying area 60 to convey the upper wafer W1, the lower wafer W2, and the overlapping wafer T to the designated devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the conveying area 60.

[0042] The first processing block G1 is equipped with a surface modification device 33 and a surface hydrophilization device 34. The surface modification device 33 is used to modify the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2. The surface hydrophilization device 34 is used to hydrophilize the modified bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2.

[0043] For example, the surface modification apparatus 33 breaks the SiO2 bonds in the bonding surfaces W1j and W2j to form dangling Si bonds, enabling subsequent hydrophilization. In the surface modification apparatus 33, oxygen, used as a process gas, is stimulated under a reduced pressure atmosphere to plasma-ionize it. Then, oxygen ions are irradiated onto the bonding surfaces W1j of the upper wafer W1 and W2j of the lower wafer W2, thereby modifying the bonding surfaces W1j and W2j through plasma treatment. The process gas is not limited to oxygen; for example, nitrogen or the like can also be used.

[0044] The surface hydrophilization device 34 uses a hydrophilization treatment liquid, such as pure water, to hydrophilize the bonding surface of the upper wafer W1 and the W2j of the lower wafer W2. The surface hydrophilization device 34 also has the function of cleaning the bonding surfaces W1j and W2j. In the surface hydrophilization device 34, for example, while rotating the upper wafer W1 or the lower wafer W2 held on a rotating chuck, pure water is supplied to the upper wafer W1 or the lower wafer W2. As a result, the pure water diffuses on the bonding surfaces W1j and W2j, and OH groups are bonded to the dangling bonds of Si, thereby hydrophilizing the bonding surfaces W1j and W2j.

[0045] The second processing block G2 is equipped with a bonding device 41 and a substrate temperature control device 42. The bonding device 41 is used to bond the hydrophilized upper wafer W1 to the lower wafer W2 to fabricate an overlay wafer T. The substrate temperature control device 42 is used to regulate the temperature of the upper wafer W1 and the lower wafer W2 before bonding, respectively. Further details regarding the bonding device 41 will be provided later. Figures 7-9 To narrate.

[0046] like Figure 2 As shown, in the third processing block G3, a position adjustment device 51 and conveying devices 53 and 54 are arranged in a stacked manner from top to bottom. Furthermore, the arrangement of each device in the third processing block G3 is not limited to... Figure 2 The configuration positions are shown. The position adjustment device 51 is used to adjust the orientation of the upper wafer W1 and the lower wafer W2 in the horizontal direction. In addition, the position adjustment device 51 is used to flip the upper wafer W1 vertically so that the bonding surface W1j of the upper wafer W1 faces downward. The upper wafer W1 is temporarily placed on the transport device 53. In addition, the lower wafer W2 and the overlapping wafer T are temporarily placed on the transport device 54.

[0047] The substrate processing apparatus 1 includes a control device 90. The control device 90 is, for example, a computer, and includes a storage medium 92 such as a memory and a CPU (Central Processing Unit) 91. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control device 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0048] Next, refer to Figure 4 This embodiment describes the substrate processing method. It is performed under the control of the control device 90. Figure 4 The steps S101 to S109 are shown.

[0049] First, a box C1 containing multiple upper wafers W1, a box C2 containing multiple lower wafers W2, and an empty box C3 are placed on the loading platform 10 of the loading / unloading station 2.

[0050] Next, the conveying device 22 removes the upper wafer W1 from the box C1 and conveys it to the transfer device 53 of the third processing block G3 in the processing station 3. After that, the conveying device 61 removes the upper wafer W1 from the transfer device 53 and conveys it to the surface modification device 33 of the first processing block G1.

[0051] Next, the surface modification apparatus 33 modifies the bonding surface W1j of the upper wafer W1 (step S101). The modification of the bonding surface W1j is performed with the bonding surface W1j facing upwards. Afterwards, the conveying device 61 removes the upper wafer W1 from the surface modification apparatus 33 and conveys it to the surface hydrophilization apparatus 34.

[0052] Next, the surface hydrophilization device 34 hydrophilizes the bonding surface W1j of the upper wafer W1 (step S102). The hydrophilization of the bonding surface W1j is performed with the bonding surface W1j facing upwards. Afterwards, the conveying device 61 removes the upper wafer W1 from the surface hydrophilization device 34 and conveys it to the position adjustment device 51 of the third processing block G3.

[0053] Next, the position adjustment device 51 adjusts the orientation of the upper wafer W1 in the horizontal direction and flips the upper wafer W1 vertically (step S103). As a result, the cut N of the upper wafer W1 (refer to...) Figure 12 The upper wafer W1 is oriented in the specified orientation, with the bonding surface W1j of the upper wafer W1 facing downwards. Then, the transport device 61 removes the upper wafer W1 from the position adjustment device 51 and transports it to the substrate temperature adjustment device 42 of the second processing block G2.

[0054] Next, the substrate temperature regulating device 42 regulates the temperature of the upper wafer W1 (step S104). The temperature regulation of the upper wafer W1 is performed with the bonding surface W1j of the upper wafer W1 facing downwards. Afterwards, the transport device 61 removes the upper wafer W1 from the substrate temperature regulating device 42 and transports it to the bonding device 41.

[0055] In parallel with the processing described above for the upper wafer W1, the following processing is performed on the lower wafer W2. First, the transport device 22 removes the lower wafer W2 from the cassette C2 and transports it to the transfer device 54 of the third processing block G3 in the processing station 3. Then, the transport device 61 removes the lower wafer W2 from the transfer device 54 and transports it to the surface modification device 33 of the first processing block G1.

[0056] Next, the surface modification apparatus 33 modifies the bonding surface W2j of the lower wafer W2 (step S105). The modification of the bonding surface W2j is performed with the bonding surface W2j facing upwards. Afterwards, the conveying device 61 removes the lower wafer W2 from the surface modification apparatus 33 and conveys it to the surface hydrophilization apparatus 34.

[0057] Next, the surface hydrophilization device 34 hydrophilizes the bonding surface W2j of the lower wafer W2 (step S106). The hydrophilization of the bonding surface W2j is performed with the bonding surface W2j facing upwards. Afterwards, the transport device 61 removes the lower wafer W2 from the surface hydrophilization device 34 and transports it to the position adjustment device 51 of the third processing block G3.

[0058] Next, the position adjustment device 51 adjusts the orientation of the lower wafer W2 in the horizontal direction (step S107). As a result, the cut N of the lower wafer W2 faces the predetermined orientation. Afterward, the transport device 61 removes the lower wafer W2 from the position adjustment device 51 and transports it to the substrate temperature control device 42 of the second processing block G2.

[0059] Next, the substrate temperature regulating device 42 regulates the temperature of the lower wafer W2 (step S108). The temperature regulation of the lower wafer W2 is performed with the bonding surface W2j of the lower wafer W2 facing upwards. Afterwards, the transport device 61 removes the lower wafer W2 from the substrate temperature regulating device 42 and transports it to the bonding device 41.

[0060] Next, the bonding device 41 bonds the upper wafer W1 and the lower wafer W2 to create the superimposed wafer T (step S109). After that, the transport device 61 removes the superimposed wafer T from the bonding device 41 and transports it to the transport device 54 of the third processing block G3.

[0061] Finally, the transfer device 22 removes the overlapping wafer T from the transfer device 54 and transfers it to the box C3 on the mounting stage 10. Thus, the series of processes is completed.

[0062] Next, refer to Figure 5 Let's illustrate an example of the conveying device 61. The conveying device 61 includes a first holding portion 62a, a second holding portion 62b disposed below the first holding portion 62a, and a first driving portion 64. The first holding portion 62a is disposed above the second holding portion 62b. Before step S103, the second holding portion 62b holds the upper wafer W1 with the bonding surface W1j facing upwards. On the other hand, after step S103 and before step S109, the first holding portion 62a holds the upper wafer W1 with the bonding surface W1j facing downwards. In addition, before step S109, the second holding portion 62b holds the lower wafer W2 with the bonding surface W2j facing upwards.

[0063] The first holding part 62a is connected to the vacuum pump 62a2 via the suction tube 62a1, and the vacuum pump 62a2 is used to vacuum-adsorb the wafer W1. On the other hand, the second holding part 62b is connected to the vacuum pump 62b2 via the suction tube 62b1, and the vacuum pump 62b2 is used to vacuum-adsorb the wafer W2.

[0064] The first drive unit 64 is connected to the first retaining part 62a and the second retaining part 62b. The first drive unit 64 drives the first retaining part 62a and the second retaining part 62b to move integrally with respect to the base 65 in the vertical direction, the horizontal direction, and about the vertical axis. Furthermore, although not shown, the first drive unit 64 includes a drive source such as a motor and a power transmission mechanism such as a belt.

[0065] When the conveying device 61 conveys the upper wafer W1 and the lower wafer W2 to the bonding device 41, it holds the upper wafer W1 by the first holding part 62a and holds the lower wafer W2 by the second holding part 62b, so as to convey the two wafers together.

[0066] In addition, the conveying device 61 also includes a third holding part 62c, a fourth holding part 62d, and a second driving part 66. The fourth holding part 62d is arranged facing each other above the third holding part 62c. After step S109, the third holding part 62c holds the overlapping wafer T with the upper wafer W1 facing upwards. On the other hand, the fourth holding part 62d holds the wafer for testing.

[0067] The third holding part 62c is connected to the vacuum pump 62c2 via the suction tube 62c1, and the vacuum pump 62c2 is used to vacuum-adsorb, for example, a superimposed wafer T. The fourth holding part 62d is connected to the vacuum pump 62d2 via the suction tube 62d1, and the vacuum pump 62d2 is used to vacuum-adsorb a test wafer.

[0068] The second drive unit 66 is connected to the third retaining unit 62c and the fourth retaining unit 62d. The second drive unit 66 drives the third retaining unit 62c and the fourth retaining unit 62d to move integrally with respect to the base 65 in the vertical direction, the horizontal direction, and about the vertical axis. Furthermore, although not shown, the second drive unit 66 includes a drive source such as a motor and a power transmission mechanism such as a belt.

[0069] The conveying device 61 feeds the upper wafer W1 and the lower wafer W2 into the bonding device 41 via the first holding part 62a and the second holding part 62b, and removes the overlapping wafer T from the bonding device 41 via the third holding part 62c. The process of continuously removing the overlapping wafer T created by the nth bonding (n being a natural number greater than or equal to 1) and feeding the upper wafer W1 and the lower wafer W2 to be bonded by the (n+1)th bonding is repeated. Furthermore, the structure of the conveying device 61 is not limited to... Figure 5 The structure shown.

[0070] Next, refer to Figure 6Here is an example of the position adjustment device 51. The position adjustment device 51 includes a base 51a, a holding part 51b that holds and rotates the upper wafer W1 or the lower wafer W2, a detection part 51c that detects the position of the notch N of the upper wafer W1 or the lower wafer W2, and a base flipping part 51d that flips the base 51a.

[0071] While the holding part 51b holds the upper wafer W1 and rotates it, the detection part 51c detects the position of the notch N on the upper wafer W1, thereby adjusting the position of the notch N to adjust the orientation of the upper wafer W1 in the horizontal direction. The orientation of the lower wafer W2 in the horizontal direction is adjusted in the same way.

[0072] The base flipping section 51d includes, for example, a motor, which flips the base 51a up and down to flip the upper wafer W1 held in the holding section 51b up and down. As a result, the bonding surface W1j of the upper wafer W1 faces downward.

[0073] Next, refer to Figures 7-9 To illustrate an example of the coupling device 41. For example... Figure 7 As shown, the bonding device 41 has a processing container 210 that can be sealed internally. An inlet / outlet 211 is formed on the side of the processing container 210 near the conveying area 60, and an opening / closing gate 212 is provided in the inlet / outlet 211. The upper wafer W1, the lower wafer W2, and the overlapping wafer T are loaded and unloaded via the inlet / outlet 211.

[0074] like Figure 8 As shown, an upper suction cup 230 and a lower suction cup 231 are provided inside the processing container 210. The upper suction cup 230 holds the upper wafer W1 from above with the mating surface W1j facing downwards. The lower suction cup 231 is located below the upper suction cup 230 and holds the lower wafer W2 from below with the mating surface W2j facing upwards.

[0075] The upper suction cup 230 is supported by a support member 280, which is disposed on the top surface of the processing container 210. On the other hand, the lower suction cup 231 is supported by a first lower suction cup moving part 291, which is disposed below the lower suction cup 231.

[0076] As described below, the first lower suction cup moving part 291 moves the lower suction cup 231 in the horizontal direction (Y-axis direction). In addition, the first lower suction cup moving part 291 is configured to allow the lower suction cup 231 to move freely in the vertical direction and to allow the lower suction cup 231 to rotate about the vertical axis.

[0077] The first lower suction cup moving part 291 is mounted on a pair of guide rails 295, which are disposed on the lower surface side of the first lower suction cup moving part 291 and extend in the horizontal direction (Y-axis direction). The first lower suction cup moving part 291 is configured to move freely along the guide rails 295. The guide rails 295 are disposed on the second lower suction cup moving part 296.

[0078] The second lower suction cup moving part 296 is mounted on a pair of guide rails 297, which are disposed on the lower surface side of the second lower suction cup moving part 296 and extend in the horizontal direction (X-axis direction). The second lower suction cup moving part 296 is configured to move freely along the guide rails 297, so that the lower suction cup 231 can move in the horizontal direction (X-axis direction). In addition, the pair of guide rails 297 are disposed on a mounting stage 298 disposed on the bottom surface of the processing container 210.

[0079] The moving mechanism 290 is composed of a first lower suction cup moving part 291 and a second lower suction cup moving part 296. The moving mechanism 290 moves the relative position of the upper suction cup 230 and the lower suction cup 231 between the substrate intersection position and the joint position.

[0080] The substrate handover position is the position where the upper suction cup 230 receives the upper wafer W1 from the transport device 61, and the lower suction cup 231 receives the lower wafer W2 from the transport device 61, and the lower suction cup 231 delivers the overlapping wafer T to the transport device 61. The substrate handover position is the position where the overlapping wafer T, created through the nth (n is a natural number greater than 1) bonding process, is removed, and the upper wafer W1 and lower wafer W2, to be bonded through the (n+1)th bonding process, are moved in. For example, the substrate handover position is... Figure 7 and Figure 8 The location shown.

[0081] When the upper wafer W1 is to be handed over to the upper chuck 230, the conveying device 61 moves directly below the upper chuck 230. Similarly, when the conveying device 61 is to receive the overlapping wafer T from the lower chuck 231 or to hand over the lower wafer W2 to the lower chuck 231, it moves directly above the lower chuck 231. This arrangement, with the upper and lower chucks 230 laterally offset and with a large vertical distance between them, facilitates the entry of the conveying device 61.

[0082] On the other hand, the bonding position is the position where the upper wafer W1 and the lower wafer W2 face each other at a predetermined interval for bonding. For example, the bonding position is... Figure 9 The position shown. Compared to the substrate junction, the vertical spacing between the upper wafer W1 and the lower wafer W2 is narrower at the bonding position. Furthermore, unlike the substrate junction, at the bonding position, the upper wafer W1 and the lower wafer W2 coincide when viewed vertically.

[0083] The moving mechanism 290 moves the relative positions of the upper suction cup 230 and the lower suction cup 231 in both the horizontal (X-axis and Y-axis) and vertical directions. Furthermore, in this embodiment, the moving mechanism 290 moves the lower suction cup 231, but it can move either the lower suction cup 231 or the upper suction cup 230, or both. Additionally, the moving mechanism 290 can also rotate either the upper suction cup 230 or the lower suction cup 231 about the vertical axis.

[0084] like Figure 9 As shown, the upper suction cup 230 is divided into multiple (e.g., three) regions 230a, 230b, and 230c. These regions 230a, 230b, and 230c are arranged sequentially from the center of the upper suction cup 230 towards the periphery. Region 230a has a circular shape when viewed from above, while regions 230b and 230c have annular shapes when viewed from above.

[0085] Each region 230a, 230b, and 230c is independently equipped with suction tubes 240a, 240b, and 240c. Each suction tube 240a, 240b, and 240c is connected to a different vacuum pump 241a, 241b, and 241c. The upper suction cup 230 can vacuum-adsorb the wafer W1 according to each region 230a, 230b, and 230c.

[0086] The upper suction cup 230 is provided with multiple retaining pins 245 that can move freely up and down in the vertical direction. The multiple retaining pins 245 are connected to a vacuum pump 246, and the upper wafer W1 is vacuum-adsorbed by the operation of the vacuum pump 246. The upper wafer W1 is vacuum-adsorbed to the lower end of the multiple retaining pins 245.

[0087] Multiple retaining pins 245 protrude from the retaining surface of the upper chuck 230 by descending. In this state, the multiple retaining pins 245 vacuum-adhere the wafer W1 to the conveying device 61 to receive the wafer W1. Then, the multiple retaining pins 245 rise to bring the wafer W1 into contact with the retaining surface of the upper chuck 230. Next, the upper chuck 230 uses vacuum pumps 241a, 241b, and 241c to horizontally vacuum-adhere the wafer W1 in each region 230a, 230b, and 230c.

[0088] Furthermore, a through hole 243 is formed at the center of the upper suction cup 230, extending vertically through the upper suction cup 230. The pushing part 250, described later, is inserted into the through hole 243. The pushing part 250 presses against the center of the upper wafer W1, which is spaced apart from the lower wafer W2, to bring it into contact with the lower wafer W2.

[0089] The pusher 250 has a push pin 251 and an outer cylinder 252 that serves as a lifting guide for the push pin 251. The push pin 251 is inserted into a through hole 243 by a drive unit (not shown) that has a motor built in it, so as to protrude from the holding surface of the upper suction cup 230 and press the center of the upper wafer W1.

[0090] The lower suction cup 231 is divided into multiple (e.g., two) regions 231a and 231b. These regions 231a and 231b are arranged sequentially from the center of the lower suction cup 231 towards the periphery. Moreover, region 231a has a circular shape when viewed from above, and region 231b has an annular shape when viewed from above.

[0091] Each region 231a and 231b is independently equipped with suction tubes 260a and 260b. Each suction tube 260a and 260b is connected to a different vacuum pump 261a and 261b. The lower suction cup 231 can vacuum-adsorb the lower wafer W2 according to each region 231a and 231b.

[0092] The lower suction cup 231 is provided with multiple retaining pins 265 that can move freely up and down in the vertical direction. The lower wafer W2 is placed on the upper end of the multiple retaining pins 265. In addition, the lower wafer W2 can also be vacuum-adsorbed onto the upper end of the multiple retaining pins 265.

[0093] Multiple retaining pins 265 protrude from the retaining surface of the lower chuck 231 by rising. In this state, the multiple retaining pins 265 receive the lower wafer W2 from the transport device 61. Subsequently, the multiple retaining pins 265 descend to bring the lower wafer W2 into contact with the retaining surface of the lower chuck 231. Then, the upper chuck 230 operates by vacuum pumps 261a and 261b to horizontally vacuum-adsorb the lower wafer W2 in each region 231a and 231b.

[0094] Next, mainly refer to Figure 10 and Figure 11 To explain Figure 4 Details of step S109. First, the conveying device 61 in Figure 7 The substrate loading / unloading positions, indicated by double-dotted lines, are used to move the upper wafer W1 and the lower wafer W2 into the bonding device 41 (step S111). The substrate loading / unloading positions are located outside the processing container 210 and adjacent to the loading / unloading outlet 211 of the processing container 210. During step S111, the relative positions of the upper suction cup 230 and the lower suction cup 231 are as follows: Figure 7 and Figure 8 The substrate junction position is shown.

[0095] Specifically, first, the conveying device 61 moves the upper wafer W1 directly below the upper chuck 230. Next, multiple retaining pins 245 are lowered to receive the upper wafer W1 from the conveying device 61. Then, the multiple retaining pins 245 are raised to bring the upper wafer W1 into contact with the retaining surface of the upper chuck 230. Finally, the upper chuck 230 holds the upper wafer W1 from above.

[0096] Next, the conveying device 61 moves the lower wafer W2 directly above the lower chuck 231. Then, the plurality of retaining pins 265 are raised to receive the lower wafer W2 from the conveying device 61. Afterward, the plurality of retaining pins 265 are lowered to bring the lower wafer W2 into contact with the retaining surface of the lower chuck 231. Then, the lower chuck 231 holds the lower wafer W2 from below.

[0097] Next, the moving mechanism 290 moves the relative position of the upper suction cup 230 and the lower suction cup 231 from... Figure 7 and Figure 8 The substrate junction position shown has been moved to Figure 9 The bonding position is shown in step S112. As a result, the upper wafer W1 and the lower wafer W2 are arranged facing each other with a predetermined interval. This interval is, for example, 80 μm to 200 μm. In addition, when viewed in the vertical direction, the alignment marks of the upper wafer W1 coincide with the alignment marks of the lower wafer W2.

[0098] Next, stop the vacuum pump 241a from working, such as... Figure 11 As shown in (A), the vacuum adsorption of the upper wafer W1 at region 230a is released. Then, the push pin 251 of the push part 250 is lowered to press the center of the upper wafer W1, so that it contacts the lower wafer W2 (step S113). As a result, the centers of the upper wafer W1 and the lower wafer W2 are joined together.

[0099] Since both the bonding surfaces W1j of the upper wafer W1 and W2j of the lower wafer W2 are modified, van der Waals forces (intermolecular forces) are first generated between the bonding surfaces W1j and W2j, causing them to bond together. Furthermore, because both surfaces are hydrophilized, the hydrophilic groups (e.g., OH groups) undergo hydrogen bonding, resulting in a strong bond between the bonding surfaces W1j and W2j.

[0100] Next, stop the vacuum pump 241b from operating, as follows: Figure 11 As shown in (B), the vacuum hold-up of the upper wafer W1 at region 230b is released. Next, the vacuum pump 241c is stopped, as shown... Figure 11 As shown in (C), the vacuum adsorption of the upper wafer W1 at region 230c is released.

[0101] In this manner, the vacuum adsorption on the upper wafer W1 is gradually released from the center to the periphery, allowing the upper wafer W1 to fall in stages to abut against the lower wafer W2. Then, the bonding of the upper wafer W1 and the lower wafer W2 proceeds sequentially from the center to the periphery (step S114). As a result, the bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 abut against each other completely, and the upper wafer W1 and the lower wafer W2 are bonded to obtain a superimposed wafer T. Afterward, the push pin 251 is raised to its original position.

[0102] Next, the moving mechanism 290 moves the relative position of the upper suction cup 230 and the lower suction cup 231 from... Figure 9 The indicated engagement position is moved to Figure 7 and Figure 8 The substrate junction position is shown (step S115). For example, the moving mechanism 290 first lowers the lower suction cup 231 to increase the vertical distance between the lower suction cup 231 and the upper suction cup 230. Then, the moving mechanism 290 moves the lower suction cup 231 laterally to laterally offset the lower suction cup 231 from the upper suction cup 230.

[0103] Next, the conveying device 61 in Figure 7 The substrate infeed / out position, indicated by a double-dotted line, is removed from the bonding device 41 from the overlapping wafer T (step S116). Specifically, firstly, the lower chuck 231 releases its grip on the overlapping wafer T. Next, multiple retaining pins 265 rise to deliver the overlapping wafer T to the transport device 61. Afterward, the multiple retaining pins 265 descend to their original positions.

[0104] In addition, the conveying device 61 continuously moves out the overlapping wafer T produced by the nth (n is a natural number greater than 1) bonding and moves in the upper wafer W1 and the lower wafer W2 to be bonded by the (n+1)th bonding.

[0105] Next, refer to Figure 12 and Figure 13 Here is an example of the displacement detection unit 220. The displacement detection unit 220 detects the downward displacement of the upper wafer W1 relative to the upper chuck 230 at a point far from the center of the upper wafer W1. The displacement detection unit 220 can detect the detachment of the upper wafer W1 from the upper chuck 230, and it can also detect the contact between the upper wafer W1 and the lower wafer. Furthermore, there is a time lag between the detachment of the upper wafer W1 from the upper chuck 230 and the contact between the upper wafer W1 and the lower wafer W2. When the upper wafer W1 and the lower wafer W2 contact, the distance between them is a predetermined distance.

[0106] The displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1. For example, as... Figure 13As shown, the displacement detection unit 220 includes a nozzle 221 for attracting or ejecting gas. The front end of the nozzle 221 is positioned above the holding surface of the upper suction cup 230 and is spaced apart from the upper wafer W1.

[0107] The displacement detection unit 220 determines the distance between the upper suction cup 230 and the upper wafer W1 by detecting the gas flow rate of the nozzle 221. Whether the nozzle 221 is drawing in or expelling gas, the narrower the distance between the upper suction cup 230 and the upper wafer W1, the higher the gas flow resistance, and therefore the lower the gas flow rate. The relationship between gas flow rate and distance is read and used from data previously determined experimentally and stored in the storage medium 92.

[0108] Furthermore, the displacement detection unit 220 can also determine the distance between the upper chuck 230 and the upper wafer W1 using ultrasound, light, or images. For example, the displacement detection unit 220 can irradiate the upper wafer W1 with ultrasound or light and receive the reflected waves or reflected light to determine the distance between the upper chuck 230 and the upper wafer W1. This measurement method can be, for example, a confocal method, a beam splitting interferometry method, or a triangulation method. The light source can be an LED or a laser.

[0109] The displacement detection unit 220 can also take pictures of the upper suction cup 230 and the upper wafer W1 from the side and perform image processing on the captured images to determine the distance between the upper suction cup 230 and the upper wafer W1.

[0110] The displacement detection unit 220 can also receive reflected light from the upper wafer W1 and determine the distance between the upper chuck 230 and the upper wafer W1 based on the amount of light received from the reflected light. The upper wafer W1 tilts midway between its detachment from the upper chuck 230 and its contact with the lower wafer W2. At this time, the amount of light received from the reflected light temporarily decreases. The relationship between the amount of light received from the reflected light and the distance is read out and used based on data that has been experimentally determined and stored in the storage medium 92.

[0111] The displacement detection unit 220 can also determine the distance between the upper chuck 230 and the upper wafer W1 by measuring the capacitance between the displacement detection unit 220 and the upper wafer W1. The narrower the distance between the upper chuck 230 and the upper wafer W1, the narrower the gap between the displacement detection unit 220 and the upper wafer W1, and the larger the capacitance. The data, which was experimentally determined and stored in the storage medium 92, is read and used to determine the relationship between capacitance and distance.

[0112] Furthermore, the displacement detection unit 220 measures the distance between the upper chuck 230 and the upper wafer W1, but it can also simply detect the detachment of the upper wafer W1 relative to the upper chuck 230. However, there is a time lag between the upper wafer W1 detaching from the upper chuck 230 and the upper wafer W1 contacting the lower wafer W2. Compared to detecting detachment, measuring the distance allows for accurate detection of the timing of the contact between the upper wafer W1 and the lower wafer W2.

[0113] like Figure 12 As shown, the progress rate of bonding the upper wafer W1 and the lower wafer W2 sometimes exhibits anisotropy. Figure 12 In the diagram, region A, indicated by shading, represents the region that has been joined at a certain timing. Figure 12 In the text, (100) represents the crystal plane index, and [0-11],

[001] ,

[011] , and

[010] represent the crystal direction indexes. Normally, a negative Miller index is indicated by marking a "-" (hyphen) above the number; however, in this specification, a negative Miller index is indicated by marking a negative sign before the number. Figure 12 The Miller indices shown are those for single-crystal silicon wafers.

[0114] The rate of progress of bonding the upper wafer W1 to the lower wafer W2 varies periodically at 90°. This is because the Young's modulus, Poisson's ratio, and shear elasticity of the single-crystal silicon wafer vary periodically at 90°.

[0115] like Figure 12 As shown, the displacement detection unit 220 is positioned at both the position where the bonding progress rate is fastest and the position where the bonding progress rate is slowest. This allows for the detection of the anisotropy of the bonding progress rate.

[0116] Multiple displacement detection units 220 are provided at the location where the bonding progress is fastest, and the downward displacement of the upper wafer W1 is detected at multiple points at different distances from the center of the upper wafer W1. This allows for the detection of the fastest progress rate.

[0117] Furthermore, multiple displacement detection units 220 are provided in the direction where the bonding progress is slowest, and the downward displacement of the upper wafer W1 is detected at multiple points at different distances from the center of the upper wafer W1. This allows for the detection of the slowest progress rate in the same direction.

[0118] The displacement detection unit 220 sends a signal indicating the detection result to the control device 90. The control device 90 uses the detection result of the displacement detection unit 220 to monitor the progress of the bonding between the upper wafer W1 and the lower wafer W2 from the center to the periphery. For example, the control device 90 uses multiple displacement detection units 220 to determine the progress rate of the bonding between the upper wafer W1 and the lower wafer W2, or to determine whether the bonding between the upper wafer W1 and the lower wafer W2 is successful.

[0119] Next, refer to Figure 14 This is the first example illustrating the timing of sending a preparation command to the conveying device 61. It is implemented under the control of the control device 90. Figure 14 The steps S201 to S208 are shown.

[0120] First, the pusher 250 begins to press against the center of the upper wafer W1 (step S201). Specifically, the pusher pin 251 of the pusher 250 begins to descend. Afterward, the control device 90 measures the elapsed time since step S201 using a timer.

[0121] Next, the control device 90 checks whether a set time has elapsed since step S201 (step S202). If the set time has not elapsed (step S202 is "No"), the control device 90 performs step S202 again after a unit time has elapsed.

[0122] On the other hand, after a set time has elapsed (step S202 is "Yes"), the bonding of the upper wafer W1 and the lower wafer W2 has progressed sufficiently, so the upper chuck 230 releases its grip on the periphery of the upper wafer W1 (step S203). As a result, the periphery of the upper wafer W1 falls to abut against the periphery of the lower wafer W2, the bonding process is completed, and an overlapping wafer T is obtained.

[0123] Next, the moving mechanism 290 begins to move the lower suction cup 231 (step S204). The lower suction cup 231 begins to move from the joining position to the substrate junction position. First, the lower suction cup 231 is lowered, and then the lower suction cup 231 is laterally offset.

[0124] Next, the moving mechanism 290 moves the lower chuck 231 (step S205). The lower chuck 231 stops at the substrate junction position. Afterwards, the process of removing the overlapping wafer T produced by the nth bonding operation and the process of inserting the upper wafer W1 and the lower wafer W2, which are to be bonded by the (n+1)th bonding operation, are performed consecutively. This series of actions will also be described below as the insertion of the upper wafer W1, etc.

[0125] The control device 90 sends a preparation command to the transport device 61 before the movement of the lower chuck 231 is completed, in order to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S205) to the start of the loading of the upper wafer W1. The timing of sending the preparation command to the transport device 61 will be described below.

[0126] First, the control device 90 checks whether a set time has elapsed since the press was initiated via the pusher 250 (step S201) (step S206). If the set time has not elapsed (step S206 is "No"), the control device 90 performs step S206 again after a unit of time has elapsed.

[0127] On the other hand, after a set time has elapsed (step S206 is "Yes"), the control device 90 sends a preparation command to the transport device 61 (step S207). When the transport device 61 receives the preparation command, it removes the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42 and begins to transport... Figure 7 The movement of the substrate in and out is indicated by double-dotted lines.

[0128] Alternatively, the substrate temperature control device 42 may be omitted. In this case, when the transport device 61 receives a preparation command, it removes the upper wafer W1 and the lower wafer W2 from the position adjustment device 51 and begins to move towards... Figure 7 The movement of the substrate in and out is indicated by double-dotted lines.

[0129] Next, the conveying device 61 completes its movement to the substrate loading / unloading position (step S208). If the timing of the conveying device 61 completing its movement (step S208) is the same as the timing of the lower suction cup 231 completing its movement (step S205), or if the timing of the conveying device 61 completing its movement (step S208) is before the timing of the lower suction cup 231 completing its movement (step S205), then the waiting time is zero, and the operating rate of the bonding device 41 is increased.

[0130] As described above, the control device 90 sends a preparation command to the transport device 61 when the pusher 250 presses the wafer W1 (step S201), causing the transport device 61 to begin moving towards the substrate loading / unloading position. Compared to the case where the transport device 61 begins moving towards the substrate loading / unloading position after the lower chuck 231 has completed its movement (step S205), the waiting time from the completion of the lower chuck 231's movement to the start of loading the upper wafer W1 can be shortened, thereby increasing the throughput of the substrate processing apparatus 1.

[0131] The control device 90 causes the conveying device 61 and the lower suction cup 231 to complete their movement (step S205) simultaneously or before the lower suction cup 231 completes its movement, that is, simultaneously or before the lower suction cup 231 returns to the substrate handover position. This makes the waiting time from the completion of the movement of the lower suction cup 231 to the start of the upper wafer W1 handover process zero, thereby further improving the throughput of the substrate processing device 1.

[0132] After a set time has elapsed since the upper wafer W1 was pressed down by the pusher 250 (step S201), the control device 90 sends a preparation command to the transport device 61, causing the transport device 61 to begin moving towards the substrate loading / unloading position. By appropriately delaying the sending of the preparation command, the waiting time from the completion of the transport device 61's movement (step S208) to the start of loading the upper wafer W1 can be shortened. Therefore, the operating efficiency of the transport device 61 can be improved. In addition, temperature variations between the upper wafer W1 and the lower wafer W2 can be suppressed.

[0133] Next, refer to Figure 15 This is a second example illustrating the timing of sending a preparation command to the conveying device 61. This is carried out under the control of the control device 90. Figure 15 The steps S301 to S309 are shown.

[0134] First, the pusher 250 begins to press against the center of the upper wafer W1 (step S301). Specifically, the pusher pin 251 of the pusher 250 begins to descend.

[0135] Next, the displacement detection unit 220 detects the downward displacement of the upper wafer W1 relative to the upper chuck 230 at a point away from the center of the upper wafer W1 (step S302). The displacement detection unit 220 can detect the detachment of the upper wafer W1 from the upper chuck 230, and it can also detect the contact between the upper wafer W1 and the lower wafer W2.

[0136] Then, the control device 90 measures the elapsed time from step S302 using a timer. There is no particular limitation on the number or combination of displacement detection units 220 used here; they are preset and stored in the storage medium 92. When all the preset displacement detection units 220 detect displacement, measurement begins using the timer.

[0137] Next, the control device 90 checks whether a set time has elapsed since step S302 (step S303). If the set time has not elapsed (step S303 is "No"), the control device 90 performs step S303 again after a unit time has elapsed.

[0138] On the other hand, after a set time has elapsed (step S303 is "Yes"), the bonding of the upper wafer W1 and the lower wafer W2 has progressed sufficiently, so the upper chuck 230 releases its grip on the periphery of the upper wafer W1 (step S304). As a result, the periphery of the upper wafer W1 falls to abut against the periphery of the lower wafer W2, the bonding process is completed, and an overlapping wafer T is obtained.

[0139] Next, the moving mechanism 290 begins to move the lower suction cup 231 (step S305). The lower suction cup 231 begins to move from the joining position to the substrate junction position. The lower suction cup 231 is lowered, and then the lower suction cup 231 is laterally offset.

[0140] Next, the moving mechanism 290 moves the lower chuck 231 (step S306). The lower chuck 231 stops at the substrate junction position. Afterwards, the process of removing the overlapping wafer T created through the nth bonding operation and inserting the upper wafer W1 and lower wafer W2, which are to be bonded through the (n+1)th bonding operation, is repeated. This series of actions will also be described below as the insertion of wafer W1, etc.

[0141] Before the lower chuck 231 completes its movement, the control device 90 sends a preparation command to the transport device 61 to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S306) to the start of the loading of the upper wafer W1. The timing of sending the preparation command to the transport device 61 will be explained below.

[0142] First, the control device 90 checks whether a set time has elapsed since the displacement was detected by the displacement detection unit 220 (step S302) (step S307). If the set time has not elapsed (step S307 is "No"), the control device 90 performs step S307 again after a unit time has elapsed.

[0143] On the other hand, after a set time has elapsed (step S307 is "Yes"), the control device 90 sends a preparation command to the transport device 61 (step S308). When the transport device 61 receives the preparation command, it removes the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42 and begins to transport... Figure 7 The movement of the substrate in and out is indicated by double-dotted lines.

[0144] Alternatively, the substrate temperature control device 42 may be omitted. In this case, when the transport device 61 receives a preparation command, it removes the upper wafer W1 and the lower wafer W2 from the position adjustment device 51 and begins to move towards... Figure 7 The movement of the substrate in and out is indicated by double-dotted lines.

[0145] Next, the conveying device 61 completes its movement to the substrate loading / unloading position (step S309). If the timing of the conveying device 61 completing its movement (step S309) is the same as the timing of the lower suction cup 231 completing its movement (step S306), or if the timing of the conveying device 61 completing its movement (step S309) is before the timing of the lower suction cup 231 completing its movement (step S306), then the waiting time is zero, and the operating rate of the bonding device 41 is increased.

[0146] As described above, the control device 90 sends a preparation command to the transport device 61 when displacement is detected by the displacement detection unit 220 (step S302), causing the transport device 61 to begin moving towards the substrate loading / unloading position. Compared to the case where the transport device 61 begins moving towards the substrate loading / unloading position after the lower chuck 231 has completed its movement (step S306), the waiting time from the completion of the lower chuck 231's movement to the start of loading the upper wafer W1 can be shortened, thereby increasing the throughput of the substrate processing apparatus 1.

[0147] The control device 90 causes the conveying device 61 and the lower suction cup 231 to complete their movement (step S306) simultaneously or before the lower suction cup 231 completes its movement, that is, simultaneously or before the lower suction cup 231 returns to the substrate handover position. This makes the waiting time from the completion of the movement of the lower suction cup 231 to the start of the upper wafer W1 handover process zero, thereby further improving the throughput of the substrate processing device 1.

[0148] After a set time has elapsed since the displacement is detected by the displacement detection unit 220 (step S302), the control device 90 sends a preparation command to the transport device 61, causing the transport device 61 to begin moving towards the substrate loading / unloading position. By appropriately delaying the sending of the preparation command, the waiting time from the completion of the movement by the transport device 61 (step S309) to the start of the loading of the upper wafer W1 can be shortened. Therefore, the operating efficiency of the transport device 61 can be improved. In addition, temperature changes between the upper wafer W1 and the lower wafer W2 can be suppressed.

[0149] If the displacement detection unit 220 is used, the progress of the bonding between the upper wafer W1 and the lower wafer W2 can be monitored. In cases where the bonding progress cannot be monitored, for safety reasons, the upper wafer W1 will be pressed down starting from the pusher 250. Figure 14 S201) serves to release the gripping of the upper wafer W1 by the upper chuck 230 on its periphery. Figure 14 The waiting time up to S203 is set a little longer. If the displacement detection unit 220 is used to monitor the progress of the engagement, the useless waiting time can be shortened.

[0150] Next, refer to Figure 16 This is a third example illustrating the timing of sending a preparation command to the conveying device 61. It is implemented under the control of the control device 90. Figure 16 The steps S401 to S408 are shown.

[0151] First, the pusher 250 begins to press against the center of the upper wafer W1 (step S401). Specifically, the pusher pin 251 of the pusher 250 begins to descend. Afterward, the control device 90 measures the elapsed time since step S401 using a timer.

[0152] Next, the control device 90 checks whether a set time has elapsed since step S401 (step S402). If the set time has not elapsed (step S402 is "No"), the control device 90 performs step S402 again after a unit time has elapsed.

[0153] On the other hand, after a set time has elapsed (step S402 is "Yes"), the bonding of the upper wafer W1 and the lower wafer W2 has progressed sufficiently, so the upper chuck 230 releases its grip on the periphery of the upper wafer W1 (step S403). As a result, the periphery of the upper wafer W1 falls to abut against the periphery of the lower wafer W2, the bonding process is completed, and an overlapping wafer T is obtained.

[0154] Next, the moving mechanism 290 begins to move the lower suction cup 231 (step S404). The lower suction cup 231 begins to move from the joining position to the substrate junction position. The lower suction cup 231 is lowered, and then the lower suction cup 231 is laterally offset.

[0155] Next, the moving mechanism 290 moves the lower chuck 231 (step S405). The lower chuck 231 stops at the substrate junction position. Afterwards, the process of removing the overlapping wafer T created through the nth bonding operation and inserting the upper wafer W1 and lower wafer W2, which are to be bonded through the (n+1)th bonding operation, is repeated. This series of actions will also be described below as the insertion of the upper wafer W1, etc.

[0156] Before the lower chuck 231 completes its movement, the control device 90 sends a preparation command to the transport device 61 to shorten the waiting time from the completion of the movement of the lower chuck 231 (step S405) to the start of the loading of the upper wafer W1. The timing of sending the preparation command to the transport device 61 will be described below.

[0157] First, the control device 90 checks whether a set time has elapsed since the start of moving the lower suction cup 231 (step S404) (step S406). If the set time has not elapsed (step S406 is "No"), the control device 90 performs step S406 again after a unit of time has elapsed.

[0158] On the other hand, after a set time has elapsed (step S406 is "Yes"), the control device 90 sends a preparation command to the transport device 61 (step S407). When the transport device 61 receives the preparation command, it removes the upper wafer W1 and the lower wafer W2 from the substrate temperature control device 42 and begins to transport... Figure 7 The movement of the substrate in and out is indicated by double-dotted lines.

[0159] Alternatively, the substrate temperature control device 42 may be omitted. In this case, when the transport device 61 receives a preparation command, it removes the upper wafer W1 and the lower wafer W2 from the position adjustment device 51 and begins to move towards... Figure 7 The movement of the substrate in and out is indicated by double-dotted lines.

[0160] Next, the conveying device 61 completes its movement to the substrate loading / unloading position (step S408). If the timing of the conveying device 61 completing its movement (step S408) is the same as the timing of the lower suction cup 231 completing its movement (step S405), or if the timing of the conveying device 61 completing its movement (step S408) is before the timing of the lower suction cup 231 completing its movement (step S405), then the waiting time is zero, and the operating rate of the bonding device 41 is increased.

[0161] As described above, the control device 90 sends a preparation command to the transfer device 61 when the lower suction cup 231 starts moving (step S404), causing the transfer device 61 to start moving towards the substrate loading / unloading position. Compared to the case where the transfer device 61 starts moving towards the substrate loading / unloading position after the lower suction cup 231 has completed its movement (step S405), the waiting time from the completion of the lower suction cup 231's movement to the start of loading the upper wafer W1 can be shortened, thereby increasing the throughput of the substrate processing device 1.

[0162] The control device 90 causes the transfer device 61 and the lower suction cup 231 to complete their movement (step S405) simultaneously or before, that is, to reach the substrate loading / unloading position simultaneously or before the lower suction cup 231 returns to the substrate handover position. This makes the waiting time from the completion of the movement of the lower suction cup 231 to the start of loading the upper wafer W1, etc., zero, thereby further improving the throughput of the substrate processing device 1.

[0163] After a set time has elapsed since the lower chuck 231 begins moving (step S404), the control device 90 sends a preparation command to the transport device 61, causing the transport device 61 to begin moving towards the substrate loading / unloading position. By appropriately delaying the sending of the preparation command, the waiting time from the completion of the transport device 61's movement (step S408) to the start of loading the upper wafer W1 can be shortened. Therefore, the operating efficiency of the transport device 61 can be improved. In addition, temperature variations between the upper wafer W1 and the lower wafer W2 can be suppressed.

[0164] Furthermore, the control device 90 can send a preparation command to the transport device 61 triggered by at least one of the following: pressing the upper wafer W1 by the pushing unit 250 (step S201), detecting displacement by the displacement detection unit 220 (step S302), and the lower chuck 231 starting to move (step S404). The control device can send the preparation command to the transport device 61 by selecting two or more of steps S201, S302, and S404 as triggers. There is no particular limitation on the number and type of triggers, which can be preset and stored in the storage medium 92.

[0165] The preferred control device 90 sends a preparation command to the transport device 61 at least when displacement is detected by the displacement detection unit 220 (step S302). The displacement detection unit 220 can monitor the progress of the bonding between the upper wafer W1 and the lower wafer W2. It can send a preparation command to the transport device 61 at a time corresponding to the progress of the bonding.

[0166] If the control device 90 fails to detect any displacement through the pre-set displacement detection unit 220 within a set time period from the time the wafer W1 is pressed onto the pusher 250 (step S201), it determines that the bonding progress has been compromised and prohibits the sending of a preparation command. Afterwards, the control device 90 may issue an alarm to the user of the substrate processing device 1.

[0167] Furthermore, if the control device 90 detects no displacement at either the displacement detection unit 220 at the fastest progress direction or the displacement detection unit 220 at the slowest progress direction, it determines that the bonding progress has deteriorated and prohibits the transmission of a preparation command. Afterwards, the control device 90 can notify the user of the substrate processing device 1 of an alarm.

[0168] Furthermore, when the control device 90 confirms through other sensors that there are no factors that would obstruct the movement of the conveying device 61, it can resume sending preparation commands.

[0169] The embodiments of the substrate processing apparatus and substrate processing method disclosed herein have been described above, but this disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations can be made within the scope of the claims. These naturally fall within the technical scope of this disclosure.

Claims

1. A substrate processing apparatus comprising: A bonding device for bonding a first substrate and a second substrate to create an overlapping substrate. A conveying device for moving the first substrate and the second substrate into the bonding device and moving the overlapping substrate out of the bonding device; as well as A control device for controlling the joining device and the conveying device. in, The bonding device includes: a first holding portion for holding the first substrate from above; a second holding portion for holding the second substrate from below; and a moving mechanism for moving the relative positions of the first holding portion and the second holding portion between a substrate intersection position and a bonding position. The control device causes the conveying device to arrive at the substrate loading / unloading position simultaneously with the return of the relative positions of the first holding portion and the second holding portion to the substrate handover position after the conveying device starts moving from the substrate loading / unloading position relative to the joining device, or to arrive at the substrate loading / unloading position before the relative positions of the first holding portion and the second holding portion return to the substrate handover position.

2. The substrate processing apparatus according to claim 1, characterized in that, The bonding device includes: a pushing part for pressing the center of the first substrate, which is spaced apart from the second substrate, to bring it into contact with the second substrate; and a displacement detection part for detecting downward displacement of the first substrate relative to the first holding part at a point away from the center of the first substrate. The control device triggers the conveying device to begin moving toward the substrate loading / unloading position by at least one of the following: pressing the first substrate by the pushing part, detecting the displacement by the displacement detection part, and causing the relative position to begin moving from the joining position to the substrate handover position by the moving mechanism.

3. The substrate processing apparatus according to claim 2, characterized in that, The system is equipped with multiple displacement detection units to detect the displacement at multiple points at different distances from the center of the first substrate. The control device determines the progress rate of the bonding between the first substrate and the second substrate, or whether the bonding between the first substrate and the second substrate is successful, through multiple displacement detection units.

4. The substrate processing apparatus according to claim 2 or 3, characterized in that, The bonding speed between the first substrate and the second substrate is anisotropic. The displacement detection unit is positioned at both the direction with the fastest progress rate and the direction with the slowest progress rate.

5. The substrate processing apparatus according to claim 2 or 3, characterized in that, After a set time has elapsed since the control device started pressing the first substrate through the pusher, it causes the conveying device to begin moving toward the substrate loading / unloading position.

6. The substrate processing apparatus according to claim 2 or 3, characterized in that, After a set time has elapsed since the displacement was detected by the displacement detection unit at a point above a certain point, the control device causes the conveying device to begin moving towards the substrate loading / unloading position.

7. The substrate processing apparatus according to claim 2 or 3, characterized in that, After a set time has elapsed since the relative position was moved from the joining position to the substrate handover position by the moving mechanism, the control device causes the conveying device to start moving towards the substrate loading / unloading position.

8. The substrate processing apparatus according to claim 2 or 3, characterized in that, The displacement detection unit is used to measure the distance between the first holding part and the first substrate.

9. The substrate processing apparatus according to claim 8, characterized in that, The first holding part includes a nozzle for attracting or ejecting gas. The displacement detection unit detects the gas flow rate of the nozzle to determine the distance between the first holding part and the first substrate.

10. The substrate processing apparatus according to claim 8, characterized in that, The displacement detection unit measures the distance between the first holding part and the first substrate using ultrasound, light, or images.

11. The substrate processing apparatus according to claim 8, characterized in that, The displacement detection unit receives reflected light from the first substrate and determines the distance between the first holding unit and the first substrate based on the amount of reflected light received. Alternatively, the displacement detection unit can measure the distance between the first holding part and the first substrate by measuring the electrostatic capacitance between the displacement detection unit and the first substrate.

12. The substrate processing apparatus according to claim 2 or 3, characterized in that, The displacement detection unit detects the separation of the first substrate from the first holding unit.

13. The substrate processing apparatus according to claim 2 or 3, characterized in that, If the control device does not detect the displacement through the displacement detection unit within a set time period from when the first substrate is pressed by the pusher, it prohibits sending a command to move the conveying device to the substrate loading / unloading position.

14. The substrate processing apparatus according to claim 4, characterized in that, If the control device fails to detect any displacement at either the displacement detection unit at the location with the fastest progress speed or the displacement detection unit at the location with the slowest progress speed, it prohibits sending a command to move the conveying device to the substrate loading / unloading position.

15. A substrate processing method, using a substrate processing apparatus according to any one of claims 1 to 14 to bond a first substrate to a second substrate, the substrate processing method comprising the following steps: The conveying device arrives at the substrate loading / unloading position simultaneously with the return of the relative positions of the first holding part and the second holding part to the substrate handover position after the conveying device starts moving from the substrate loading / unloading position, or arrives at the substrate loading / unloading position before the relative positions of the first holding part and the second holding part return to the substrate handover position.

Images