Method for forming semiconductor device and semiconductor device

Abstract

This application provides a method for forming a semiconductor device and a semiconductor device. The method includes: providing a stacked structure, the stacked structure including a substrate and a sacrificial layer and a semiconductor layer cyclically stacked on the surface of the substrate, the sacrificial layer and the semiconductor layer including a plurality of first grooves and semiconductor pillars extending along a first direction, the first grooves and semiconductor pillars being spaced apart; forming word line pillars along a second direction, the word line pillars intersecting with and surrounding the semiconductor pillars, the first direction and the second direction being perpendicular; forming source and drain electrodes on both sides of the semiconductor pillars surrounded by the word line pillars respectively by an epitaxial growth process; forming a bit line on one side of the source or drain electrode, the bit line being connected to the source or drain electrode, the bit line extending along a third direction, the first direction, the second direction and the third direction being perpendicular to each other; forming a capacitor on the side of the source or drain electrode where no bit line is formed, thereby forming a semiconductor device.

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