Light emitting device

Abstract

A light-emitting device is provided, the light-emitting device including: a first electrode; a second electrode facing the first electrode; and an interlayer layer between the first electrode and the second electrode, and including an emission layer, wherein the interlayer layer includes a hole injection layer and an electron transport layer, the hole injection layer includes a first electron transport compound, and a hole mobility (M H ) and an electron mobility (M E ) of the first electron transport compound satisfy the following formula (1): formula (1) M H ≤ M E × 0.95 (1).

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0107968, filed on August 26, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] One or more embodiments of this disclosure relate to a light-emitting device and an electronic device including the light-emitting device. Background Technology

[0003] Compared to other devices, light-emitting devices are self-emissive devices with wide viewing angles, high contrast, short response times, and excellent characteristics in terms of brightness, driving voltage, and response speed.

[0004] In a light-emitting device, a first electrode is placed on a substrate, and a hole transport region, an emitter layer, an electron transport region, and a second electrode are sequentially located on the first electrode. Holes supplied from the first electrode can move towards the emitter layer through the hole transport region, and electrons supplied from the second electrode can move towards the emitter layer through the electron transport region. Charge carriers such as holes and electrons recombine in the emitter layer to generate light. Summary of the Invention

[0005] A light-emitting device is provided that has improved efficiency and lifetime compared to other devices in the prior art.

[0006] Further aspects of the embodiments will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the disclosed embodiments.

[0007] According to one aspect of an embodiment, a light-emitting device is provided, the light-emitting device comprising:

[0008] First electrode;

[0009] The second electrode faces the first electrode; and

[0010] The interlayer, located between the first electrode and the second electrode, includes an emission layer.

[0011] The interlayer consists of a hole injection layer and an electron transport layer.

[0012] The hole injection layer includes a first electron transport compound, and

[0013] Hole mobility of the first electron transport compound (M) H ) and electron mobility (M E It satisfies formula (1).

[0014] Formula (1)

[0015] M H ≤M E ×0.95

[0016] According to another aspect of the embodiments,

[0017] An electronic device including a light-emitting device is provided. Attached Figure Description

[0018] The above and other aspects and features of certain embodiments disclosed will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0019] Figure 1 This is a schematic diagram illustrating the structure of a light-emitting device according to an embodiment;

[0020] Figure 2 This is a cross-sectional view illustrating a light-emitting device according to an embodiment of the present disclosure; and

[0021] Figure 3 This is a cross-sectional view of a light-emitting device according to another embodiment of the present disclosure. Detailed Implementation

[0022] Referring now to the embodiments in more detail, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this respect, the given embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain aspects of the embodiments of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0023] The compounds used in the prior art in the hole injection layer are materials with strong hole transport properties, such as aromatic amine compounds and / or metal oxides.

[0024] In light-emitting devices using materials with strong hole transport properties in the hole injection layer, the hole density in the light-emitting device is greater than the electron density, leading to an imbalance between electrons and holes in the emission layer. As a result, efficiency and lifetime are reduced. Furthermore, recombination regions where electrons and holes meet are generated at the interface of the electron transport layer adjacent to the emission layer, which further reduces efficiency and lifetime.

[0025] According to one aspect of the embodiments, a light-emitting device is provided, the light-emitting device comprising:

[0026] First electrode;

[0027] The second electrode faces the first electrode; and

[0028] The interlayer, located between the first electrode and the second electrode, includes an emission layer.

[0029] The interlayer consists of a hole injection layer and an electron transport layer.

[0030] The hole injection layer includes a first electron transport compound, and

[0031] Hole mobility of the first electron transport compound (M) H ) and electron mobility (M E ) satisfies formula (1):

[0032] Formula (1)

[0033] M H ≤M E ×0.95.

[0034] The first electron transport compound refers to a compound whose hole transport capability is weaker than its electron transport capability. According to another aspect of the embodiments, although the first electron transport compound possesses both hole and electron transport capabilities, it exhibits a weaker hole transport capability due to its slightly higher electron mobility. In other words, formula (1) quantitatively shows that the hole transport capability is weak (e.g., the hole transport capability is relatively weaker than the electron transport capability) due to the higher electron transport capability of the first electron transport compound. For example, the first electron transport compound is an organic compound.

[0035] The use of a first electron transport compound with weak hole transport capability in the hole injection layer to regulate the density of holes injected into the light-emitting device improves the electron-hole balance and thus improves efficiency and lifetime.

[0036] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, and the hole injection layer may be located between the first electrode and the emitter layer.

[0037] In an embodiment, a hole transport layer, an electron blocking layer, or a combination thereof may also be included between the first electrode and the emitter layer.

[0038] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, and the electron transport layer may be located between the second electrode and the emission layer.

[0039] In an embodiment, a hole blocking layer, an electron injection layer, or a combination thereof may also be included between the second electrode and the emitter layer.

[0040] In an embodiment, the electron transport layer may include a second electron transport compound, and the first and second electron transport compounds may be different from each other. The second electron transport compound may be a conventional electron transport compound used in the electron transport layer.

[0041] In an embodiment, in a light-emitting device according to an embodiment of the present disclosure, the interlayer may include a hole transport region located between the first electrode and the emitting layer and an electron transport region located between the emitting layer and the second electrode.

[0042] The hole transport region may include: a hole injection layer; and a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof.

[0043] The electron transport region may include: an electron transport layer; and a hole blocking layer, an electron injection layer, or a combination thereof.

[0044] The hole injection layer may include a first electron transport compound, and the electron transport layer may include a second electron transport compound.

[0045] Hole mobility of the first electron transport compound (M) H ) and electron mobility (M E ) can satisfy formula (1), and the first electron transport compound and the second electron transport compound can be different from each other.

[0046] In embodiments, the first electron transport compound may include: a compound containing a CN moiety; a compound containing a triazole moiety; a compound containing an oxadiazole moiety; a compound containing an aromatic imidazole moiety; a compound containing a naphthiadiimide moiety; a compound containing a perylene moiety; a boron-containing compound; a compound containing anthracene and phosphine oxide moiety; a compound containing a triazine moiety; a compound containing a pyridine moiety; a compound containing a pyrimidine moiety; and / or a compound containing a carbazole moiety.

[0047] The aromatic imidazole moiety refers to, for example, the moiety shown below (where substituents are omitted).

[0048]

[0049] The naphthalenediimide moiety refers to, for example, the moiety shown below (where substituents are omitted).

[0050]

[0051] Compounds containing anthracene and phosphine oxide moieties can be represented by Formula 1:

[0052] Formula 1

[0053]

[0054] In Equation 1,

[0055] R, Ar1, Ar2, and X are all independently unsubstituted or substituted with at least one R. 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic groups, and

[0056] Both m and n are independent integers from 1 to 5.

[0057] In the embodiments, the first electron transport compound may include at least one of the following compounds:

[0058]

[0059]

[0060]

[0061]

[0062]

[0063] In some embodiments, the hole injection layer may further include an n-type dopant compound.

[0064] n-type dopant compounds are strong n-type dopant compounds, and the lowest unoccupied molecular orbital (LUMO) level (or work function) of n-type dopant compounds can be, for example, -6.0 eV or less.

[0065] As used herein, the term "strong" indicates an extremely low LUMO level (or work function) and, for example, -6.0 eV or less.

[0066] The hole injection barrier can be reduced by using a strong n-type dopant compound in the hole injection layer.

[0067] In the embodiments, the n-type dopant compound may be a quinone derivative, a cyano-containing compound, a metal oxide, a phthalocyanine compound, or any combination thereof.

[0068] In the embodiments, the n-type dopant compound may include at least one of the following compounds:

[0069]

[0070]

[0071] The n-type dopant compound not only acts as a dopant. In embodiments, the amount of the first electron transport compound in the hole injection layer can be less than the amount of the n-type dopant compound.

[0072] In the embodiments, the amount of the n-type dopant compound can range from about 0.1 wt% to about 15 wt%. When the LUMO level (or work function) and doping range of the n-type dopant compound are within the above range, hole injection from the anode can be more efficient, and the hole density can be further suitably or appropriately tuned.

[0073] According to another aspect of the embodiments, the electronic device includes a light-emitting device.

[0074] In some embodiments, the electronic device may further include thin-film transistors.

[0075] A thin-film transistor can include a source electrode and a drain electrode, and

[0076] The first electrode of the light-emitting device can be electrically coupled to at least one selected from the source electrode and drain electrode of the thin-film transistor.

[0077] In embodiments, the electronic device may also include a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof.

[0078] As used herein, the term "interlayer" refers to a single layer and / or all of the multiple layers located between the first electrode and the second electrode of a light-emitting device.

[0079] Figure 1 Description

[0080] Figure 1 This is a schematic cross-sectional view of the light-emitting device 10 according to an embodiment. The light-emitting device 10 includes a first electrode 110, an interlayer layer 130, and a second electrode 150.

[0081] In the following text, we will combine Figure 1 The structure of the light-emitting device 10 according to the embodiments and the method of manufacturing the light-emitting device 10 are described below.

[0082] First electrode 110

[0083] exist Figure 1 In this embodiment, the substrate may additionally be located below the first electrode 110 and / or above the second electrode 150. The substrate may be a glass substrate and / or a plastic substrate. The substrate may be a flexible substrate. In one or more embodiments, the substrate may comprise a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0084] The first electrode 110 can be formed, for example, by deposition and / or sputtering of a material for forming the first electrode 110 onto a substrate. When the first electrode 110 is an anode, a material with a high work function that can easily inject holes can be used as the material for forming the first electrode 110.

[0085] The first electrode 110 can be a reflective electrode, a semi-transparent electrode, or a transmissive electrode. When the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In one or more embodiments, when the first electrode 110 is a semi-transparent electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof may be used as the material for forming the first electrode 110.

[0086] The first electrode 110 may have a single-layer structure comprising a single layer (or composed of a single layer) or a multi-layer structure comprising multiple layers. In an embodiment, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0087] Interlayer 130

[0088] Interlayer 130 is located on the first electrode 110. Interlayer 130 includes an emission layer.

[0089] The interlayer 130 may also include a hole transport region located between the first electrode 110 and the emitter layer and an electron transport region located between the emitter layer and the second electrode 150.

[0090] In addition to various suitable organic materials, the interlayer 130 may also include metal-containing compounds (such as organometallic compounds) and / or inorganic materials (such as quantum dots).

[0091] In one or more embodiments, the interlayer layer 130 may include: i) two or more emitting layers, sequentially stacked between the first electrode 110 and the second electrode 150; and ii) a charge generating layer located between the two emitting layers. When the interlayer layer 130 includes the emitting layer and the charge generating layer as described above, the light-emitting device 10 may be a tandem light-emitting device.

[0092] The charge generation layer may include a p-charge generation layer and / or an n-charge generation layer.

[0093] In an embodiment, the charge generation layer may include a first electron transport compound. The hole mobility (M) of the first electron transport compound is... H ) and electron mobility (M EThe p-charge generation layer may satisfy formula (1). In an embodiment, the p-charge generation layer may include a first electron transport compound.

[0094] A first electron transport compound with weak hole transport capability is used in the hole injection layer to adjust the hole density injected into the light-emitting device, thereby improving the electron-hole balance. Furthermore, the first electron transport compound is also used in the p-charge generation layer, which helps to improve the electron-hole balance of the tandem light-emitting device. Therefore, the efficiency and lifetime of the light-emitting device can be improved.

[0095] In embodiments, the charge generation layer may further include an n-type dopant. In embodiments, the p-charge generation layer may further include a strong n-type dopant. In embodiments, a strong n-type dopant may include quinone derivatives, cyano-containing compounds, metal oxides, phthalocyanine compounds, or any combination thereof.

[0096] In this embodiment, the thickness of the p-charge generation layer can be approximately [missing information]. to approximately Within the range. In an embodiment, the thickness of the p-charge generation layer can be approximately... to approximately Within the range.

[0097] In the embodiment, the thickness of the n-charge generation layer can be approximately to approximately Within the scope or in the approximate to approximately Within the range. In an embodiment, the thickness of the n-charge generation layer can be approximately... to approximately Within the range.

[0098] Hole transport region in interlayer layer 130

[0099] The hole transport region may have: i) a single-layer structure comprising a single layer (or consisting of a single layer) of a single material; ii) a single-layer structure comprising a single layer (or consisting of a single layer) of a single material; or iii) a multi-layer structure comprising multiple layers containing different materials.

[0100] The hole transport region may include a hole injection layer. The hole transport region may also include a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof.

[0101] The hole injection layer may include a first electron transport compound, and the first electron transport compound is the same as described above.

[0102] In an embodiment, the hole transport region may have a multi-layer structure, including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, wherein, in each structure, layers are stacked sequentially from the first electrode 110.

[0103] The hole transport region may include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof:

[0104] Formula 201

[0105]

[0106] Formula 202

[0107]

[0108] In equations 201 and 202,

[0109] L 201 To L 204 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0110] L 205 It can be *-O-*', *-S-*', or *-N(Q) 201 )-*', unsubstituted or substituted with at least one R 10a C1-C 20 Alkylene, unsubstituted or substituted with at least one R 10a C2-C 20 alkenyl, unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0111] xa1 to xa4 can each be an integer in the range of 0 to 5 independently.

[0112] xa5 can be an integer in the range of 1 to 10.

[0113] R 201 To R 204 and Q 201 Each can be independently unsubstituted or substituted with at least one R 10aC3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0114] R 201 and R 202 It can optionally be via a single bond, unsubstituted or substituted with at least one R 10a C1-C5 alkylene groups or unsubstituted or substituted groups having at least one R 10a The C2-C5 alkenyl groups are linked together to form unsubstituted or substituted groups with at least one R group. 10a C8-C 60 Polycyclic groups (e.g., carbazole groups, etc.) (e.g., see compound HT16 below),

[0115] R 203 and R 204 It can optionally be via a single bond, unsubstituted or substituted with at least one R 10a C1-C5 alkylene groups or unsubstituted or substituted groups having at least one R 10a The C2-C5 alkenyl groups are linked together to form unsubstituted or substituted groups with at least one R group. 10a C8-C 60 Polycyclic groups, and

[0116] na1 can be an integer in the range of 1 to 4.

[0117] In embodiments, both formula 201 and formula 202 may include at least one group selected from those represented by formulas CY201 to CY217:

[0118]

[0119] Regarding formulas CY201 to CY217, R 10b and R 10c With R 10a The descriptions are the same, CY ring 201 To CY 204 Each can be independently C3-C 20 Carbocyclic or C1-C 20 Heterocyclic group, and at least one hydrogen in formulas CY201 to CY217 may be unsubstituted or may be at least one R described herein. 10a replace.

[0120] In the embodiments, the ring CY in formulas CY201 to CY217 201 To CY 204 Each group can be independently a phenyl group, a naphthol group, a phenanthrene group, or anthracene group.

[0121] In the embodiments, both Formula 201 and Formula 202 may include at least one selected from groups represented by Formulas CY201 to CY203.

[0122] In one or more embodiments, Formula 201 may include at least one selected from groups represented by Formulas CY201 to CY203 and at least one selected from groups represented by Formulas CY204 to CY217.

[0123] In one or more embodiments, in Equation 201, xa1 can be 1, R 201 It can be a group represented by one selected from formulas CY201 to CY203, where xa2 can be 0, R 202 It can be a group represented by one of the formulas CY204 to CY207.

[0124] In one or more embodiments, each of Formulas 201 and 202 may not include a group represented by one of Formulas CY201 to CY203.

[0125] In one or more embodiments, each of Formulas 201 and 202 may not include a group represented by one selected from Formulas CY201 to CY203, and may include at least one group selected from Formulas CY204 to CY217.

[0126] In an embodiment, each of Formulas 201 and 202 may not include a group represented by one of Formulas CY201 to CY217.

[0127] In embodiments, the hole transport region may include at least one or any combination thereof from compounds HT1 to HT44, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), and polyaniline / poly(4-styrenesulfonate) (PANI / PSS):

[0128]

[0129]

[0130]

[0131]

[0132]

[0133] The thickness of the hole transport region can be approximately to approximately (For example, about to approximately Within the range of ), when the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be approximately to approximately (For example, about to approximately Within the range of ), and the thickness of the hole transport layer can be approximately to approximately (For example, about to approximately Within these ranges, suitable or satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage when the hole transport region, hole injection layer, and hole transport layer thickness are within these ranges.

[0134] The emission assist layer can improve luminous efficiency by compensating for the optical resonant distance according to the wavelength of the light emitted by the emission layer, and the electron blocking layer can block the flow of electrons from the electron transport region. The emission assist layer and the electron blocking layer can comprise the materials described above.

[0135] Strong n-type dopant

[0136] In addition to these materials, the hole transport region may also include charge-generating materials to improve conductivity properties (e.g., electrical conductivity). The charge-generating materials may be uniformly or non-uniformly dispersed in the hole transport region (e.g., in the form of a monolayer of charge-generating material).

[0137] The charge-generating material can be, for example, a strongly n-type dopant.

[0138] Strong n-type dopants can strongly attract electrons to have the effect of releasing holes, and therefore can be used as p-dopants.

[0139] In the embodiments, the LUMO level (or work function) of the strong n-type dopant can be -6.0 eV or less.

[0140] In an embodiment, the hole injection layer may include a strong n-type dopant.

[0141] In the embodiments, strong n-type dopants may include quinone derivatives, cyano-containing compounds, metal oxides, phthalocyanine compounds, or any combination thereof.

[0142] Examples of quinone derivatives may include TCNQ and F4-TCNQ.

[0143] Examples of cyano-containing compounds may include HAT-CN and compounds represented by the following formula 221.

[0144]

[0145]

[0146] In Equation 221,

[0147] R 221 To R 223 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic groups, and

[0148] From R 221 To R 223 At least one of the selected groups can be independently C3-C that are all substituted with the following groups. 60 Carbocyclic or C1-C 60 Heterocyclic groups: cyano; -F; -Cl; -Br; -I; C1-C substituents of cyano, -F, -Cl, -Br, -I, or any combination thereof. 20 Alkyl groups; or any combination thereof.

[0149] Examples of metal oxides may include tungsten oxide (e.g., WO, W2O3, WO2, WO3 and / or W2O5), vanadium oxide (e.g., VO, V2O3, VO2 and / or V2O5), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3 and / or Mo2O5) and rhenium oxide (e.g., ReO3).

[0150] Phthalocyanine compounds refer to complexes in which a metal is bound to a phthalocyanine ligand. Because each of the four isoindole molecules is bound in a ring shape with a -N= bridge, the phthalocyanine ligand has a structure similar to that of porphyrins.

[0151] Emission layer in interlayer 130

[0152] When the light-emitting device 10 is a full-color light-emitting device, the emitting layer can be patterned as a red emitting layer, a green emitting layer, and / or a blue emitting layer according to the sub-pixels. In one or more embodiments, the emitting layer may have a stacked structure of two or more layers selected from red, green, and blue emitting layers, wherein the two or more layers are in contact with each other (e.g., in physical contact) or separated from each other to emit white light. In one or more embodiments, the emitting layer may include two or more materials selected from red, green, and blue emitting materials, wherein the two or more materials are mixed together in a single layer to emit white light.

[0153] In an embodiment, the emission layer may include multiple emission layers.

[0154] In this embodiment, multiple emitting layers may all emit blue or green light.

[0155] The emitting layer may include a host and a dopant. The dopant may include phosphorescent dopant, fluorescent dopant, or any combination thereof.

[0156] Based on 100 parts by weight of the host, the amount of dopant in the emitter layer can range from about 0.01 parts by weight to about 15 parts by weight.

[0157] In one or more embodiments, the emission layer may include quantum dots.

[0158] In some embodiments, the emission layer may include a delayed fluorescence material. The delayed fluorescence material may be used as a host or dopant in the emission layer.

[0159] The thickness of the emission layer can be approximately to approximately (For example, about to approximately Within the range of ), excellent light emission characteristics can be obtained without significantly increasing the driving voltage when the thickness of the emitting layer is within this range.

[0160] main body

[0161] The main body may include a compound represented by the following formula 301:

[0162] Formula 301

[0163] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21 .

[0164] In Equation 301,

[0165] Ar301 and L 301 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0166] xb11 can be 1, 2, or 3.

[0167] xb1 can be an integer in the range of 0 to 5.

[0168] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R. 10a C1-C 60 Alkyl, unsubstituted or substituted with at least one R 10a C2-C 60 Alkenyl, unsubstituted or substituted with at least one R 10a C2-C 60 Alkyne group, unsubstituted or substituted with at least one R 10a C1-C 60 Alkyl group, unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic groups, -Si(Q) 301 (Q) 302 (Q) 303 -N(Q) 301 (Q) 302 -B(Q) 301 (Q) 302 -C(=O)(Q) 301 -S(=O)2(Q) 301 ) or -P(=O)(Q 301 (Q) 302 xb21 can be an integer from 1 to 5, and

[0169] Q 301 To Q 303 Same as described in conjunction with Q1.

[0170] In one or more embodiments, when xb11 in formula 301 is 2 or greater, two or more Ar 301 They can be connected to each other via a single key.

[0171] In embodiments, the body may include a compound represented by formula 301-1, a compound represented by formula 301-2, or any combination thereof:

[0172] Formula 301-1

[0173]

[0174] Formula 301-2

[0175]

[0176] In Equations 301-1 and 301-2,

[0177] Ring A 301 To Ring A 304 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0178] X 301 It can be O, S, N-[(L 304 ) xb4 -R 304 ]、C(R 304 (R) 305 ) or Si(R 304 (R) 305 ),

[0179] xb22 and xb23 can each be independently 0, 1, or 2.

[0180] L 301 xb1 and R 301 Same as described in this specification,

[0181] L 302 To L 304 Each independently binds to L 301 The descriptions are the same.

[0182] xb2 to xb4 can all be independently identical to those described in conjunction with xb1, and

[0183] R 302 To R 305 and R 311 To R 314 With R 301 The descriptions are the same.

[0184] In one or more embodiments, the host may include an alkaline earth metal complex. In embodiments, the host may be a Be complex (e.g., compound H55), a Mg complex, a Zn complex, or any combination thereof.

[0185] In the embodiments, the body may include one or any combination of compounds H1 to H124, 9,10-bis(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthyl-2-yl)anthracene (MADN), 9,10-bis(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-bis-9-carbazolylbenzene (mCP), and 1,3,5-tris(carbazolyl-9-yl)benzene (TCP).

[0186]

[0187]

[0188]

[0189]

[0190]

[0191]

[0192]

[0193] Phosphorescent dopants

[0194] Phosphorescent dopants may include at least one transition metal as the central metal (e.g., a central metal atom).

[0195] Phosphorescent dopants may include monodentate ligands, bidentate ligands, tridentate ligands, tetradentate ligands, pentadentate ligands, hexadentate ligands, or any combination thereof.

[0196] Phosphorescent dopants can be electrically neutral.

[0197] In one or more embodiments, the phosphorescent dopant may include an organometallic compound represented by formula 401:

[0198] Formula 401

[0199] M(L 401 ) xc1 (L 402 ) xc2

[0200] Formula 402

[0201]

[0202] In Equations 401 and 402,

[0203] M can be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)).

[0204] L 401 The ligand can be represented by Equation 402, and xc1 can be 1, 2, or 3, wherein when xc1 is 2 or greater, two or more L... 401 They can be the same or different from each other.

[0205] L 402 It can be an organic ligand, and xc2 can be 0, 1, 2, 3, or 4, wherein when xc2 is 2 or greater, two or more L... 402 They can be the same or different from each other.

[0206] X 401 and X 402 They can each be nitrogen or carbon independently.

[0207] Ring A 401 And Ring A 402 Each can be independently C3-C 60 Carbocyclic or C1-C 60 Heterocyclic group,

[0208] T 401 It can be a single bond, -O-, -S-, -C(=O)-, -N(Q)- 411 )-、-C(Q 411 (Q) 412 )-、-C(Q 411 )=C(Q 412 )-、-C(Q 411 = or = C =,

[0209] X 403 and X 404 They can all be independently chemical bonds (e.g., covalent or coordinate bonds (e.g., coordinate-covalent or coordinate-valent bonds)), O, S, N (Q) 413 ), B(Q) 413 ), P(Q 413 ), C(Q 413 (Q) 414 ) or Si(Q 413 (Q) 414 ),

[0210] Q 411 To Q 414Similar to the description in conjunction with Q1,

[0211] R 401 and R 402 They can all be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R. 10a C1-C 20 Alkyl, unsubstituted or substituted with at least one R 10a C1-C 20 Alkyl group, unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic groups, -Si(Q) 401 (Q) 402 (Q) 403 -N(Q) 401 (Q) 402 -B(Q) 401 (Q) 402 -C(=O)(Q) 401 -S(=O)2(Q) 401 ) or -P(=O)(Q 401 (Q) 402 ),

[0212] Q 401 To Q 403 Similar to the description in conjunction with Q1,

[0213] xc11 and xc12 can both be independent integers from 0 to 10, and

[0214] In Equation 402, * and *' both represent the binding position with M in Equation 401.

[0215] In one or more embodiments, in formula 402, i)X 401 It can be nitrogen, X 402 It can be carbon; or ii)X 401 and X 402 Each of them can be nitrogen.

[0216] In one or more embodiments, when xc1 in equation 401 is 2 or greater, two or more L 401 The two rings A in 401 Optionally via T as a connecting base 402 Connected to each other, or two or more L 401 The two rings A in 402 Optionally via T as a connecting base 403They are interconnected (see compounds PD1 through PD4 and PD7). T 402 and T 403 With combination T 401 The descriptions are the same.

[0217] L in Equation 401 402 It can be an organic ligand. In one or more embodiments, L 402 It can be a halogen group, a diketone group (e.g., an acetylacetone group), a carboxylic acid group (e.g., a pyridine carboxylic acid group), a -C (=O) group, an isonitrile group, a -CN group, and a phosphorus-containing group (e.g., a phosphine group or a phosphite group) or any combination thereof.

[0218] Phosphorescent dopants may include, for example, one of compounds PD1 to PD25 or any combination thereof:

[0219]

[0220]

[0221] Fluorescent dopants

[0222] Fluorescent dopants may include amine-containing compounds, styrene-containing compounds, or any combination thereof.

[0223] In one or more embodiments, the fluorescent dopant may include a compound represented by Formula 501:

[0224] Formula 501

[0225]

[0226] In Equation 501,

[0227] Ar 501 L 501 To L 503 R 501 and R 502 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 The heterocyclic groups, xd1 to xd3, can each be independently 0, 1, 2, or 3, and

[0228] xd4 can be 1, 2, 3, 4, 5 or 6.

[0229] In one or more embodiments, Ar in Formula 501 501It can be a condensation cyclic group in which three or more monocyclic groups are condensed together (e.g., bonded together) (e.g., anthracene group, etc.). (group or pyrene group).

[0230] In one or more embodiments, xd4 in Formula 501 can be 2.

[0231] In the embodiments, the fluorescent dopant may include one or any combination of the following compounds FD1 to FD36, DPVBi and DPAVBi:

[0232]

[0233]

[0234]

[0235] Delayed fluorescence materials

[0236] The emission layer may include delayed fluorescence materials.

[0237] The delayed fluorescence material used herein may be selected from any suitable compound capable of emitting delayed fluorescence based on (e.g., through) a delayed fluorescence emission mechanism.

[0238] The delayed fluorescence material included in the emission layer can be used as a host or dopant, depending on the type (or kind) of other materials included in the emission layer.

[0239] In the embodiments, the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescence material can be 0 eV or greater and 0.5 eV or less. When the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescence material meets the above range, an upconversion from the triplet state to the singlet state of the delayed fluorescence material can occur appropriately or effectively, thereby improving the luminous efficiency of the light-emitting device 10.

[0240] In embodiments, delayed fluorescence materials may include: i) at least one electron donor (e.g., π-electron-rich C3-C). 60 Cyclic groups (such as carbazole groups) and at least one electron acceptor (e.g., sulfoxide, cyano, or a nitrogen-containing C1-C group depleted of π electrons). 60 (ii) materials comprising two or more cyclic groups sharing boron (B) and condensed together (e.g., bonded together). 60 Polycyclic materials.

[0241] Delayed fluorescence materials may include at least one selected from compounds DF1 to DF9:

[0242]

[0243] quantum dots

[0244] The emission layer may include quantum dots.

[0245] As used herein, the term "quantum dot" refers to a crystal of a semiconductor compound and may include any suitable material capable of emitting light of various suitable wavelengths depending on the size of the crystal.

[0246] The diameter of quantum dots can range from, for example, about 1 nm to about 10 nm.

[0247] Quantum dots can be synthesized using wet chemical processes, metal-organic chemical vapor deposition processes, molecular beam epitaxy processes, and / or similar processes.

[0248] Wet chemistry processes refer to methods in which organic solvents and precursor materials are mixed and then used to grow quantum dot crystals. During crystal growth, the organic solvent naturally acts as a dispersant coordinating on the surface of the quantum dot crystals and controls the crystal growth. Therefore, the growth of quantum dot particles can be controlled using a process that is easier and less costly to perform compared to vapor deposition processes such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE).

[0249] Quantum dots can include group II-VI semiconductor compounds, group III-V semiconductor compounds, group III-VI semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0250] Examples of group II-VI semiconductor compounds may include: binary compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and / or MgZnS; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe; or any combination thereof.

[0251] Examples of group III-V semiconductor compounds may include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and / or InPSb; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb; or any combination thereof. Group III-V semiconductor compounds may also include group II elements. Examples of group III-V semiconductor compounds that also include group II elements may include InZnP, InGaZnP, and / or InAlZnP.

[0252] Examples of III-VI semiconductor compounds may include: binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, In2S3, InSe, In2Se3 and / or InTe; ternary compounds such as InGaS3 and / or InGaSe3; or any combination thereof.

[0253] Examples of group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2 and / or AgAlO2; or any combination thereof.

[0254] Examples of group IV-VI semiconductor compounds may include: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe and / or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe and / or SnPbSTe; or any combination thereof.

[0255] In the embodiments, group IV elements or compounds may include: single elements, such as Si or Ge; binary compounds, such as SiC and / or SiGe; or any combination thereof.

[0256] Each element included in a multi-element compound (such as binary, ternary, and quaternary compounds) may exist in the particles at a uniform or non-uniform concentration.

[0257] In some embodiments, the quantum dot may have a single structure or a core-shell dual structure, wherein the single structure has a uniform (e.g., substantially uniform) concentration of each element included in the corresponding quantum dot. In embodiments, the material included in the core may differ from the material included in the shell.

[0258] The shell of a quantum dot can serve as a protective layer to maintain semiconductor properties by preventing or reducing the chemical transformation of the nucleus, and / or as a charged layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the nucleus and the shell can have a concentration gradient in which the concentration of the elements present in the shell decreases along the direction toward the center.

[0259] Examples of shells for quantum dots are metal and / or non-metal oxides, semiconductor compounds, or any combination thereof. Examples of metal and / or non-metal oxides may include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and / or NiO; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and / or CoMn2O4; or any combination thereof. Examples of semiconductor compounds may include group III-VI, II-VI, III-V, I-III-VI, IV-VI semiconductor compounds, or any combination thereof as described herein. In the embodiments, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0260] The full width at half maximum (FWHM) of the emission wavelength spectrum of quantum dots can be about 45 nm or smaller, for example, about 40 nm or smaller, for example, about 30 nm or smaller. When the FWHM of the emission wavelength spectrum of quantum dots is within this range, color purity and / or color reproducibility can be improved. Furthermore, light emitted through such quantum dots illuminates in all directions (e.g., substantially in every direction). Therefore, a wider viewing angle can be achieved.

[0261] In addition, quantum dots can be, for example, spherical, pyramidal, multi-armed and / or cubic nanoparticles, nanotubes, nanowires, nanofibers and / or nanosheets.

[0262] By adjusting the size of quantum dots, the band gap can also be adjusted, thereby obtaining light of various suitable wavelengths in the quantum dot emission layer. Therefore, by using quantum dots of different sizes, light-emitting devices that emit light of various suitable wavelengths can be realized. More specifically, the size of the quantum dots can be selected to emit red, green, and / or blue light. Furthermore, the size of the quantum dots can be adjusted to allow for combinations of various suitable colors of light to emit white light.

[0263] Electron transport region in interlayer 130

[0264] The electron transport region may have: i) a single-layer structure comprising a single layer (or consisting of a single layer) comprising a single material (or consisting of a single material); ii) a single-layer structure comprising a single layer (or consisting of a single layer) comprising multiple different materials; or iii) a multi-layer structure comprising multiple layers containing different materials.

[0265] The electron transport region includes an electron transport layer. The electron transport region may also include a hole blocking layer, an electron injection layer, or a combination thereof.

[0266] The electron transport layer includes a second electron transport compound.

[0267] The second electron transport compound can be different from the first electron transport compound.

[0268] In an embodiment, the electron transport region may have an electron transport layer / electron injection layer structure or a hole blocking layer / electron transport layer / electron injection layer structure, wherein, for each structure, layers are sequentially stacked from the emitter layer.

[0269] Electron transport regions (e.g., hole blocking layers, electron control layers, and / or electron transport layers within electron transport regions) may include nitrogen-containing C1-C atoms containing at least one π-electron-poor material. 60 Metal-free compounds with cyclic groups.

[0270] In an embodiment, the electron transport region may include a compound represented by the following formula 601:

[0271] Formula 601

[0272] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 .

[0273] In Equation 601,

[0274] Ar 601 and L601 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0275] xe11 can be 1, 2, or 3.

[0276] xe1 can be 0, 1, 2, 3, 4, or 5.

[0277] R 601 It can be either unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ),

[0278] Q 601 To Q 603 Similar to the description in conjunction with Q1,

[0279] xe21 can be 1, 2, 3, 4, or 5, and

[0280] Ar 601 L 601 and R 601 At least one of them can be independently unsubstituted or substituted with at least one R. 10a Nitrogen-containing C1-C with depleted π electrons 60 Ring base.

[0281] In one or more embodiments, when xe11 in formula 601 is 2 or greater, two or more Ar 601 They can be connected to each other via a single key.

[0282] In the embodiment, Ar in formula 601 601 It can be a substituted or unsubstituted anthracene group.

[0283] In an embodiment, the electron transport region may include a compound represented by formula 601-1:

[0284] Formula 601-1

[0285]

[0286] In Equation 601-1,

[0287] X 614 It can be N or C(R) 614 ), X 615 It can be N or C(R) 615 ), X 616 It can be N or C(R) 616 ), and from X 614 To X 616 At least one of the selected options can be N.

[0288] L 611 To L 613 By referring to and combining L 601 To understand from the given description,

[0289] xe611 to xe613 can be understood by referring to the description given in xe1.

[0290] R 611 To R 613 It can be combined with R by reference 601 To understand from the given description, and

[0291] R 614 To R 616 They can all be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkyl group, unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group.

[0292] In the embodiments, xe1 in formula 601 and xe611 to xe613 in formula 601-1 can each be independently 0, 1 or 2.

[0293] The electron transport region may include one or any combination of compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, and NTAZ:

[0294]

[0295]

[0296]

[0297] The thickness of the electron transport region can be approximately to approximately (For example, about to approximately Within the range of ), when the electron transport region includes a hole blocking layer, an electron transport layer, or a combination thereof, the thicknesses of the hole blocking layer and the electron transport layer can both be independently within, for example, approximately to approximately (For example, about to approximately The thickness of the electron transport layer can be, for example, approximately [missing information]. to approximately (For example, about to approximately Within the range of the above range, suitable or satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0298] In addition to the materials mentioned above, the electron transport region (e.g., the electron transport layer in the electron transport region) may also include metallic materials.

[0299] Metal-containing materials may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ions in alkali metal complexes may be Li, Na, K, Rb, and / or Cs ions, while the metal ions in alkaline earth metal complexes may be Be, Mg, Ca, Sr, and / or Ba ions. The ligands coordinated to the metal ions of the alkali metal or alkaline earth metal complexes may all be independently hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.

[0300] In embodiments, the metal-containing material may include a Li complex. The Li complex may include, for example, compound ET-D1 (LiQ) or compound ET-D2:

[0301]

[0302] The electron transport region may include an electron injection layer that facilitates electron injection from the second electrode 150. The electron injection layer may be in direct contact (e.g., physical contact) with the second electrode 150.

[0303] The electron injection layer may have: i) a single-layer structure including a single layer (or consisting of a single layer), wherein the single layer includes a single material (or consists of a single material); ii) a single-layer structure including a single layer (or consisting of a single layer), wherein the single layer includes a plurality of different materials; or iii) a multilayer structure including a plurality of layers containing different materials.

[0304] The electron injection layer may comprise an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0305] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0306] The alkali metal-containing compound, alkaline earth metal-containing compound and rare earth metal-containing compound may include oxides and / or halides (for example, fluorides, chlorides, bromides and / or iodides) of alkali metals, alkaline earth metals and rare earth metals, or any combination thereof.

[0307] The alkali metal-containing compound may include alkali metal oxides (such as Li2O, Cs2O and / or K2O) and alkali metal halides (such as LiF, NaF, CsF, KF, LiI, NaI, CsI and / or KI, or any combination thereof). The alkaline earth metal-containing compound may include alkaline earth metal oxides, such as BaO, SrO, CaO, Ba x Sr 1-x O (x is a real number satisfying the condition 0<x<1) and / or Ba x Ca 1-x O (x is a real number satisfying the condition 0<x<1). The rare earth metal-containing compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. In embodiments, the rare earth metal-containing compound may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3 and Lu2Te3.

[0308] Alkali metal complexes, alkaline earth metal complexes, and rare earth metal complexes may include: i) one of the ions of an alkali metal, an alkaline earth metal, and / or a rare earth metal; and ii) as a ligand attached to a metal ion, such as hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenidine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0309] The electron-injected layer may include alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof (or may consist of alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof), and optionally, may also include organic materials (e.g., compounds represented by Formula 601).

[0310] In embodiments, the electron-injected layer may include: i) an alkali metal compound (e.g., an alkali metal halide); or ii) a) an alkali metal compound (e.g., an alkali metal halide); and b) an alkali metal, alkaline earth metal, rare earth metal, or any combination thereof (or composed of i) an alkali metal compound (e.g., an alkali metal halide); or ii) a) an alkali metal compound (e.g., an alkali metal halide); and b) an alkali metal, alkaline earth metal, rare earth metal, or any combination thereof. In embodiments, the electron-injected layer may be a KI:Yb co-deposited layer and / or an RbI:Yb co-deposited layer.

[0311] When the electron injection layer also includes organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof may be uniformly or non-uniformly dispersed in the matrix including the organic materials.

[0312] The thickness of the electron injection layer can be approximately to approximately (For example, about to approximately Within the range of the above-mentioned thickness, suitable or satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0313] Second electrode 150

[0314] The second electrode 150 may be located on the interlayer 130 having such a structure. The second electrode 150 may be a cathode serving as an electron injection electrode, and may be made of metals, alloys, conductive compounds, or any combination thereof, all having low work functions, as materials for forming the second electrode 150.

[0315] The second electrode 150 may include at least one or any combination thereof selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, and IZO. The second electrode 150 may be a transmission electrode, a semi-transmission electrode, or a reflection electrode.

[0316] The second electrode 150 may have a single-layer structure or a multi-layer structure including two or more layers.

[0317] cap layer

[0318] The first capping layer may be located outside the first electrode 110, and / or the second capping layer may be located outside the second electrode 150. More specifically, the light-emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer layer 130, and the second electrode 150 are stacked sequentially in the order stated above; a structure in which the first electrode 110, the interlayer layer 130, the second electrode 150, and the second capping layer are stacked sequentially in the order stated above; or a structure in which the first capping layer, the first electrode 110, the interlayer layer 130, the second electrode 150, and the second capping layer are stacked sequentially in the order stated above.

[0319] Light generated in the emitting layer of the interlayer layer 130 of the light-emitting device 10 can be extracted (e.g., emitted to the outside) through the first electrode 110 (which is a semi-transparent electrode or a transmissive electrode) and the first capping layer, and light generated in the emitting layer of the interlayer layer 130 of the light-emitting device 10 can be extracted to the outside through the second electrode 150 (which is a semi-transparent electrode or a transmissive electrode) and the second capping layer.

[0320] The first and second capping layers can improve the external luminous efficiency based on the principle of constructive interference. Therefore, the light extraction efficiency of the light-emitting device 10 is improved, thereby enhancing the luminous efficiency of the light-emitting device 10.

[0321] Each of the first and second capping layers may include a material having a refractive index of 1.6 or greater (at a wavelength of 589 nm).

[0322] The first capping layer and the second capping layer can each be independently an organic capping layer including organic materials, an inorganic capping layer including inorganic materials, or a composite capping layer including both organic and inorganic materials.

[0323] At least one selected from the first capping layer and the second capping layer may each independently comprise a carbocyclic compound, a heterocyclic compound, an amino-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalene phthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, heterocyclic compound, and amino-containing compound may optionally be substituted with substituents comprising O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In the embodiments, at least one selected from the first capping layer and the second capping layer may each independently comprise an amino-containing compound.

[0324] In an embodiment, at least one selected from the first capping layer and the second capping layer may each independently include a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.

[0325] In one or more embodiments, at least one selected from the first capping layer and the second capping layer may each independently include one selected from compounds HT28 to HT33, one selected from compounds CP1 to CP6, β-NPB, or any combination thereof:

[0326]

[0327] electronic devices

[0328] Light-emitting devices can be included in a variety of suitable electronic devices. In embodiments, electronic devices including light-emitting devices can be light-emitting devices and / or authentication devices, etc.

[0329] In addition to the light-emitting device, the electronic device (e.g., the light-emitting device) may also include: i) a color filter; ii) a color conversion layer; or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer may be located in at least one direction of travel of the light emitted from the light-emitting device. In an embodiment, the light emitted from the light-emitting device may be blue light. The light-emitting device may be the same as described above (e.g., substantially the same). In an embodiment, the color conversion layer may include quantum dots. The quantum dots may be, for example, as described herein.

[0330] An electronic device may include a first substrate. The first substrate includes multiple sub-pixel regions, a color filter includes multiple color filter regions corresponding to the multiple sub-pixel regions, and a color conversion layer may include multiple color conversion regions corresponding to the multiple sub-pixel regions.

[0331] A pixel-defining film can be located between multiple sub-pixel regions to define each sub-pixel region.

[0332] The color filter may also include multiple color filter areas and light-blocking patterns located between the multiple color filter areas, and the color conversion layer may also include multiple color conversion areas and light-blocking patterns located between the multiple color conversion areas.

[0333] Multiple color filter regions (or multiple color conversion regions) may include a first region emitting a first color light, a second region emitting a second color light, and / or a third region emitting a third color light, and the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths from each other. In an embodiment, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In an embodiment, the multiple color filter regions (or multiple color conversion regions) may include quantum dots. More specifically, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. The quantum dots are the same as those described herein (e.g., substantially the same). Each of the first, second, and third regions may also include a scatterer (e.g., a light scatterer).

[0334] In an embodiment, the light-emitting device can emit first light, a first region can absorb the first light to emit a first first color light, a second region can absorb the first light to emit a second first color light, and a third region can absorb the first light to emit a third first color light. In this respect, the first first color light, the second first color light, and the third first color light can have different maximum emission wavelengths from each other. More specifically, the first light can be blue light, the first first color light can be red light, the second first color light can be green light, and the third first color light can be blue light (e.g., a different type of blue light or a second blue light).

[0335] In addition to the light-emitting devices described above, electronic devices may also include thin-film transistors. A thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein either the source electrode or the drain electrode may be electrically coupled to either the first electrode or the second electrode of the light-emitting device.

[0336] Thin-film transistors may also include gate electrodes and / or gate insulating films, etc.

[0337] The active layer may include crystalline silicon, amorphous silicon, organic semiconductors and / or oxide semiconductors, etc.

[0338] Electronic devices may also include a sealing portion for sealing a light-emitting device. The sealing portion may be located between a color filter and / or a color conversion layer and the light-emitting device. The sealing portion allows light from the light-emitting device to be extracted to the outside while simultaneously (e.g., concurrently) preventing or reducing the penetration of ambient air and / or moisture into the light-emitting device. The sealing portion may be a sealing substrate comprising a transparent glass substrate and / or a plastic substrate. The sealing portion may be a thin-film encapsulation layer comprising at least one organic layer and an inorganic layer. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0339] In addition to color filters and / or color conversion layers, various suitable functional layers may be included in the sealed portion, depending on the application of the electronic device. Functional layers may include touchscreen layers and / or polarization layers, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, and / or an infrared touchscreen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual using biometric information from a biometric body (e.g., a fingertip and / or pupil).

[0340] In addition to light-emitting devices, authentication equipment may also include biometric information collectors.

[0341] Electronic devices can be applied to a variety of suitable displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, video game consoles, medical instruments (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasound diagnostic devices and / or endoscopic displays), fish finders, various suitable measuring instruments, meters (e.g., instruments for vehicles, aircraft and / or ships) and / or projectors, etc.

[0342] Figure 2 and Figure 3 Description

[0343] Figure 2 This is a cross-sectional view of a light-emitting device according to an embodiment.

[0344] Figure 2 The light-emitting device includes a substrate 100, a thin-film transistor (TFT), a light-emitting device, and a package portion 300 for sealing the light-emitting device.

[0345] The substrate 100 may be a flexible substrate, a glass substrate, and / or a metal substrate. A buffer layer 210 may be located on the substrate 100. The buffer layer 210 prevents or reduces the penetration of impurities through the substrate 100 and may provide a flat surface on the substrate 100.

[0346] The TFT can be located on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0347] The active layer 220 may include inorganic semiconductors (such as silicon and / or polysilicon), organic semiconductors and / or oxide semiconductors, and may include source regions, drain regions and channel regions.

[0348] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be located on the active layer 220, and the gate electrode 240 may be located on the gate insulating film 230.

[0349] Interlayer insulating film 250 may be located on gate electrode 240. Interlayer insulating film 250 is located between gate electrode 240 and source electrode 260 to insulate gate electrode 240 from source electrode 260, and is located between gate electrode 240 and drain electrode 270 to insulate gate electrode 240 from drain electrode 270.

[0350] The source electrode 260 and the drain electrode 270 may be located on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may expose the source and drain regions of the active layer 220, and the source electrode 260 and the drain electrode 270 may respectively contact (e.g., physically contact) the exposed portions of the source and drain regions of the active layer 220.

[0351] The TFT can be electrically bonded to the light-emitting device to drive the light-emitting device and is covered by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. The light-emitting device is disposed on the passivation layer 280. The light-emitting device includes a first electrode 110, an interlayer layer 130, and a second electrode 150.

[0352] The first electrode 110 may be located on the passivation layer 280. The passivation layer 280 does not completely cover the drain electrode 270, and may expose a specific area of ​​the drain electrode 270, and the first electrode 110 may be bonded to the exposed area of ​​the drain electrode 270.

[0353] A pixel defining layer 290, including an insulating material, may be located on the first electrode 110. The pixel defining layer 290 may expose a specific area of ​​the first electrode 110, and an interlayer layer 130 may be located in the exposed area of ​​the first electrode 110. The pixel defining layer 290 may be a polyimide and / or a polyacrylic organic film. In some embodiments, at least some layers of the interlayer layer 130 may extend over the upper portion of the pixel defining layer 290 and may therefore be in the form of a common layer.

[0354] The second electrode 150 may be located on the interlayer 130, and the capping layer 170 may additionally be located on the second electrode 150. The capping layer 170 may cover the second electrode 150.

[0355] The encapsulation portion 300 may be located on the cap layer 170. The encapsulation portion 300 may be located on the light-emitting device and protect the light-emitting device from moisture and / or oxygen. The encapsulation portion 300 may include: an inorganic film, including silicon nitride (SiN). x ), silicon dioxide (SiO) x (i) Indium tin oxide, indium zinc oxide, or combinations thereof; organic membranes, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate and / or polyacrylic acid), epoxy resins (e.g., aliphatic glycidyl ether (AGE)), or combinations thereof; or combinations of inorganic and organic membranes.

[0356] Figure 3 This is a cross-sectional view showing a light-emitting device according to an embodiment of the present disclosure.

[0357] In addition to the light-blocking pattern 500 and the functional area 400 being located on the package portion 300, Figure 3 Light-emitting devices and Figure 2 The light-emitting devices are basically the same. Functional region 400 can be: i) a color filter region; ii) a color conversion region; or iii) a combination of a color filter region and a color conversion region. In the embodiment, it includes... Figure 3 The light-emitting devices in the light-emitting equipment can be series-connected light-emitting devices.

[0358] Preparation method

[0359] Layers constituting hole transport regions, emission layers, and electron transport regions can be formed in a certain area by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodget (LB) deposition, inkjet printing, laser printing, and laser-induced thermal imaging.

[0360] When forming layers constituting hole transport regions, emitter layers, and electron transport regions by vacuum deposition, by considering the materials to be included in the layers to be formed and the structure of the layers to be formed, deposition temperatures in the range of about 100°C to about 500°C, and about 10 -8 To about 10 -3 Vacuum degree and approximately within the range of Torr to approximately Vacuum deposition is performed at deposition rates within the specified range.

[0361] When spin coating is used to form layers constituting hole transport regions, emitter layers, and electron transport regions, spin coating can be performed at coating speeds ranging from about 2,000 rpm to about 5,000 rpm and heat treatment temperatures ranging from about 80°C to about 200°C, taking into account the materials to be included in the layers to be formed and the structure of the layers to be formed.

[0362] At least some general definitions of substituents

[0363] As used herein, the term "C3-C" 60 "Carbocyclic group" refers to a cyclic group consisting only of carbon and having three to sixty carbon atoms, such as the term "C1-C" used herein. 60 A "heterocyclic group" refers to a cyclic group having one to sixty carbon atoms and also including heteroatoms in addition to carbon. (C3-C) 60 Carbocyclic groups and C1-C 60 Heterocyclic groups can be monocyclic groups consisting of a single ring or polycyclic groups in which two or more rings are condensed together (e.g., bonded together). In the examples, C1-C 60 The number of cyclic atoms in a heterocyclic group can range from 3 to 61.

[0364] As used herein, the term "cycloalloy" includes C3-C 60 Carbocyclic groups and C1-C 60 Heterocyclic group.

[0365] As used herein, “π-electron-rich C3-C” 60 "Cyclic group" refers to a cyclic group having three to sixty carbon atoms and not including *-N=*' as the cyclic moiety, such as the term "nitrogen-poor C1-C" used herein. 60 "Cyclic group" refers to a heterocyclic group having one to sixty carbon atoms and including *-N=*' as the cyclic part.

[0366] For example,

[0367] C3-C 60 The carbocyclic group can be: i) a group T1; or ii) a condensed cyclic group in which two or more groups T1 are condensed together (e.g., bonded together) (e.g., cyclopentadienyl group, adamantyl group, norbornel group, phenyl group, cyclopentadienyl group, naphthyl group, chamomile cyclic group, indane group, acenaphthene group, phenatene group, phenanthrene group, anthracene group, fluoranthene group, benzo[9,10]phenanthrene group, pyrene group, Groups, perylene groups, pentanene groups, heptaphenyl groups, tetraphenyl groups, fentanyl groups, hexaphenyl groups, pentaphenyl groups, rutin groups, fentanyl groups, ovoid groups, indole groups, fluorene groups, spirodifluorene groups, benzo[a]fluorene groups, indole[a]phenanthrene groups, or indole[a]anthracene groups),

[0368] C1-C 60 The heterocyclic group can be: i) group T2; ii) a condensed cyclic group in which two or more groups T2 are condensed together (e.g., bonded together); or iii) a condensed cyclic group in which at least one group T2 and at least one group T1 are condensed together (e.g., bonded together) (e.g., pyrrole group, thiophene group, furan group, indole group, benzoindole group, naphthoindole group, isoindole group, benzoisoindole group, naphthoisoindole group). Groups, benzothiophene group, benzofuran group, carbazole group, dibenzothiophene group, dibenzothiophene group, dibenzofuran group, indole-carbazole group, indole-carbazole group, benzofuran-carbazole group, benzothiophene-carbazole group, benzothiophene-carbazole group, benzoindole-carbazole group, benzocarbazole group, benzonaphthiofuran group, benzonaphthiophene group, benzonaphthiophene group, benzofuran-dibenzofuran group Groups, benzofuran-dibenzothiophene group, benzothiophene-dibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiaazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benziisoxazole group, benzothiazole group, benziisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, iso Quinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamoline group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group or azadibenzofuran group),

[0369] C3-C rich in π electrons 60 The cyclic group can be: i) group T1; ii) a condensed cyclic group in which two or more groups T1 are condensed together (e.g., bonded together); iii) group T3; iv) a condensed cyclic group in which two or more groups T3 are condensed together (e.g., bonded together); or v) a condensed cyclic group in which at least one group T3 and at least one group T1 are condensed together (e.g., bonded together) (e.g., C3-C). 60Carbocyclic groups, pyrrole groups, thiophene groups, furan groups, indole groups, benzoindole groups, naphthoindole groups, isoindole groups, benzoisoindole groups, naphthoisoindole groups, benzothiophene groups, benzofuran groups, carbazole groups, dibenzothiophene groups, dibenzofuran groups, indole-carbazole groups, indole-carbazole groups, benzofuran-carbazole groups, benzothiophene-carbazole groups, benzothiophene-carbazole groups, benzoindole-carbazole groups, benzocarbazole groups, benzonaphthofuran groups, benzonaphthophene groups, benzonaphthothiophene groups, benzofuran-dibenzofuran groups, benzofuran-dibenzothiophene groups or benzothiophene-dibenzothiophene groups),

[0370] Nitrogen-containing C1-C cells with depleted π electrons 60 The cyclic group can be: i) group T4; ii) a condensed cyclic group in which two or more groups T4 are condensed together (e.g., bonded together); iii) a condensed cyclic group in which at least one group T4 and at least one group T1 are condensed together (e.g., bonded together); iv) a condensed cyclic group in which at least one group T4 and at least one group T3 are condensed together (e.g., bonded together); or v) a condensed cyclic group in which at least one group T4, at least one group T1, and at least one group T3 are condensed together (e.g., bonded together) (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group). Groups including thiadiazole group, benzopyrazole group, benzoimidazolium group, benzoxazole group, benzoisoxazole group, benzothiazole group, benzoisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamyl group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, or azadibenzofuran group),

[0371] Group T1 can be a cyclopropane group, cyclobutane group, cyclopentane group, cyclohexane group, cycloheptane group, cyclooctane group, cyclobutene group, cyclopentene group, cyclopentadiene group, cyclohexene group, cyclohexadiene group, cycloheptene group, adamantane group, norbornene group (or bicyclo[2.2.1]heptane group), norbornene group, bicyclo[1.1.1]pentane group, bicyclo[2.1.1]hexane group, bicyclo[2.2.2]octane group, or phenyl group.

[0372] Group T2 can be a furan group, thiophene group, 1H-pyrrole group, thiorrole group, borocyclopentadienyl group, 2H-pyrrole group, 3H-pyrrole group, imidazole group, pyrazole group, triazole group, tetraazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, azathirrole group, azaboracyclopentadienyl group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, or tetraazine group.

[0373] Group T3 can be a furan group, a thiophene group, a 1H-pyrrole group, a thiophene group, or a borocyclopentadiene group, and

[0374] The group T4 can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetraazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathirrole group, an azaboranecyclopentadiene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetraazine group.

[0375] As used herein, the terms "cyclogroup" and "C3-C" are similar. 60 "Carbocyclic group", "C1-C" 60 Heterocyclic groups, π-electron-rich C3-C 60 "Cyclonal group" or "π-electron-poor nitrogen-containing C1-C" 60 "Cycloyl group" refers to a group whose structure, according to the formula described by the corresponding term, is condensed (e.g., bonded together) with a cycloyl group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, or a tetravalent group). In one or more embodiments, "phenyl group" can be a benzo[a] group, phenyl group, or phenylene group, etc., which can be readily understood by those skilled in the art based on the structure of a formula including "phenyl group".

[0376] In the embodiment, the unit price C3-C 60 Carbon cyclo groups and monovalent C1-C 60 Examples of heterocyclic groups can include C3-C 10 cycloalkyl, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocyclic alkenyl, C6-C 60 Aryl, C1-C 60 Heteroaryl, monovalent non-aromatic condensed polycyclic and monovalent non-aromatic condensed heterocyclic, and divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups can include C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkyl, C3-C 10Cycloalkylene, C1-C 10 Heterocyclic alkenyl, C6-C 60 aryl, C1-C 60 Hybrid aryl, divalent non-aromatic condensed polycyclic group and divalent non-aromatic condensed heterocyclic group.

[0377] As used herein, the term "C1-C" 60 "Alkyl" refers to a straight-chain or branched monovalent group of an aliphatic saturated hydrocarbon having 1 to 60 carbon atoms, examples of which include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, and tert-decyl. The term "C1-C" as used herein... 60 "alkylene" refers to C1-C 60 Alkyl groups have essentially the same divalent structure.

[0378] As used herein, the term "C2-C" 60 "Alkenyl" refers to the group formed at C2-C. 60 A monovalent hydrocarbon group having at least one carbon-carbon double bond at the main chain (e.g., in the middle) or end (e.g., at the tip) of an alkyl group, examples of which include vinyl, propenyl, and butenyl groups. As used herein, the term "C2-C" is used in conjunction with this. 60 "Alkenyl" refers to C2-C 60 Alkenes are divalent groups with essentially the same structure.

[0379] As used herein, the term "C2-C" 60 "Alkyne group" refers to the group at C2-C 60 An alkyl group having at least one carbon-carbon triple bond at its middle or end, examples of which include ethynyl and propynyl groups. As used herein, the term "C2-C" is used... 60 "Immyneyl" refers to C2-C 60 Alkynes are divalent groups with essentially the same structure.

[0380] As used herein, the term "C1-C" 60 "Alkoxy" refers to the compound formed by -OA 101 (where A) 101 It is C1-C 60 Alkyl groups are monovalent groups, examples of which include methoxy, ethoxy, and isopropoxy.

[0381] As used herein, the term "C3-C" 10"Cycloalkyl" refers to a monovalent saturated hydrocarbon cycloalloy having 3 to 10 carbon atoms, examples of which include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornelyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, and bicyclo[2.2.2]octyl. As used herein, the term "C3-C" is also relevant. 10 "Cycloalkylene" refers to C3-C 10 Cycloalkyl groups have divalent groups with essentially the same structure.

[0382] As used herein, the term "C1-C" 10 "Heterocyclic alkyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms, comprising at least one heteroatom as a cyclic atom in addition to a carbon atom. Examples include 1,2,3,4-oxatriazolyl, tetrahydrofuranyl, and tetrahydrothiophenyl. As used herein, the term "C1-C..." 10 "Heterocyclic alkyl" refers to C1-C 10 Heterocyclic alkyl groups have divalent groups with essentially the same structure.

[0383] As used herein, the term "C3-C" 10 "Cycloalkenyl" refers to a monovalent cycloalkenyl group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring and lacking aromaticity (e.g., not aromatic), examples of which include cyclopentenyl, cyclohexenyl, and cycloheptenyl. As used herein, the term "C3-C" is also relevant. 10 "Biopylene" refers to C3-C 10 Cycloalkenyl groups are divalent groups with essentially the same structure.

[0384] As used herein, the term "C1-C" 10 "Heterocyclic alkenyl" refers to a monovalent cyclic group whose ring structure contains at least one heteroatom other than one to ten carbon atoms as cyclic atoms, and at least one double bond. C1-C 10 Examples of heterocyclic alkenyl groups include 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, and 2,3-dihydrothiophenyl. As used herein, the term "C1-C..." 10 "Heterocyclic alkenyl" refers to C1-C 10 Heterocyclic alkenyl groups are divalent groups with essentially the same structure.

[0385] As used here, the term "C6-C" 60 "Aryl" refers to a monovalent group having a carbocyclic aromatic system comprising 6 to 60 carbon atoms, and as used herein, "C6-C" 60 "Aryl" refers to a divalent group in a carbocyclic aromatic system having 6 to 60 carbon atoms. (C6-C) 60Examples of aryl groups include phenyl, cyclopentadienyl, naphthyl, chamomilecycloyl, indarabinyl, acenaphthel, phenanthyl, anthracene, fluoranthyl, benzo[9,10]phenanthyl, pyrene, alkyl, peryl, pentylenyl, hepta-alkenyl, tetraphenyl, framylinyl, hexaphenyl, pentaphenyl, rubidyl, benzoyl, and ovoxyl. When C6-C 60 Aryl and C6-C 60 When each of the aryl groups comprises two or more rings, the two or more rings may fused together (e.g., bonded together).

[0386] As used herein, the term "C1-C" 60 "Heteroaryl" refers to a monovalent group having a heterocyclic aromatic system having at least one heteroatom other than a carbon atom as a cyclizing atom and 1 to 60 carbon atoms. As used herein, the term "C1-C" is also relevant. 60 "Hypo-heteroaryl" refers to a divalent group having a heterocyclic aromatic system, which has at least one heteroatom other than a carbon atom as a cyclizing atom and 1 to 60 carbon atoms. C1-C 60 Examples of heteroaryl groups include pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cyclolinyl, phenanthrolinel, phthalazinyl, and naphthidyl. When C1-C 60 heteroaryl and C1-C 60 When each heteroaryl group comprises two or more rings, the two or more rings may condense together (e.g., bind together).

[0387] As used herein, the term "monovalent nonaromatic condensation polycyclic group" refers to a monovalent group having two or more rings condensed together (e.g., bonded together), with only carbon atoms (e.g., having 8 to 60 carbon atoms) as cyclic atoms, and lacking aromaticity (e.g., not aromatic when considered as a whole) throughout its molecular structure. Examples of monovalent nonaromatic condensation polycyclic groups include indenyl, fluorenyl, spirodifluorenyl, benzo[a]fluorenyl, indeno[a]phenanthryl, and indeno[a]anthrayl. As used herein, the term "divalent nonaromatic condensation polycyclic group" refers to a divalent group having substantially the same structure as a monovalent nonaromatic condensation polycyclic group.

[0388] As used herein, the term "monovalent non-aromatic condensed heteropolycyclic group" refers to a monovalent group having two or more rings condensed together (e.g., bonded together), at least one heteroatom other than carbon atoms (e.g., having 1 to 60 carbon atoms) as cyclic atoms, and having no aromaticity (e.g., not aromatic when considered as a whole) in its entire molecular structure. Examples of monovalent non-aromatic condensed heterocyclic groups include pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzofuranyl, azacarbazole, azafluorenyl, azadibenzothiophene, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, isothiazolyl, oxadiazolyl, thiazolyl. Benzopyrazolyl, benzoimidazolyl, benzooxazolyl, benzothiazolyl, benzooxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolecarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothiophenocarbazolyl, benzothiophenocarbazolyl, benzoindolocarbazolyl, benzocarbazolyl, benzonaphthiophenyl, benzonaphthiophenyl, benzofuranodibenzofuranyl, benzofuranodibenzothiophenyl, and benzothiophenodibenzothiophenyl. As used herein, the term "divalent nonaromatic condensation heteropolycyclic group" refers to a divalent group having substantially the same structure as a monovalent nonaromatic condensation heteropolycyclic group.

[0389] As used here, the term "C6-C" 60 "Aryloxy group" refers to -OA 102 (where A) 102 It is C6-C 60 Aryl), and as used herein in the term "C6-C" 60 "Arylthio" refers to -SA 103 (where A) 103 It is C6-C 60 Aryl).

[0390] As used herein, the term "R" 10a "refer to:

[0391] Deuterium (-D), -F, -Cl, -Br, -I, hydroxyl, cyano, or nitro;

[0392] None of them were substituted or were substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, or C3-C. 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60Arylthio, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 C1-C or any combination thereof 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group or C1-C 60 Alkoxy;

[0393] None of them were substituted or were substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 C3-C or any combination thereof 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 aryloxy or C6-C 60 aryl thiols; or

[0394] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31-S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0395] Q1 to Q3, Q are used here 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each of these can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 Alkyl groups; or neither group is substituted or is substituted with deuterium, -F, cyano, or C1-C. 60 Alkyl, C1-C 60 C3-C of alkoxy, phenyl, biphenyl, or any combination thereof 60 Carbocyclic or C1-C 60 Heterocyclic group.

[0396] As used herein, the term "heteroatom" refers to any atom other than a carbon atom. Examples of heteroatoms include O, S, N, P, Si, B, Ge, Se, and any combination thereof.

[0397] As used herein, the term "Ph" refers to phenyl, "Me" refers to methyl, "Et" refers to ethyl, and "tert-Bu" or "Bu" refers to tert-Bu. t "Refers to tert-butyl, as the term "OMe" used herein refers to methyl methacrylate (MMA).

[0398] As used herein, the term "biphenyl" refers to a "phenyl group that has a substituted phenyl group." In other words, "biphenyl" is a phenyl group with a C6-C bond. 60 Aryl groups are substituted phenyl groups.

[0399] As used herein, the term "terphenyl" refers to a "phenyl group substituted with biphenyl groups." In other words, a "terphenyl" is a phenyl group having C6-C substitutions. 60 C6-C of aryl 60 Aryl groups are substituted phenyl groups.

[0400] Unless otherwise defined, * and *' as used herein refer to the binding site with the adjacent atom in the corresponding expression.

[0401] The compounds and light-emitting devices according to the embodiments will be described in more detail below with reference to examples.

[0402] Example

[0403] Manufacturing of light-emitting devices

[0404] Comparison Example 1

[0405] Will The anode (hereinafter referred to as the “glass substrate”) was cut to a size of 50 mm × 50 mm × 0.7 mm and ultrasonicated for 5 minutes each with isopropanol and pure water, then cleaned by irradiating it with ultraviolet light and exposing it to ozone for 30 minutes. The glass substrate was then loaded onto a vacuum deposition apparatus.

[0406] DNTPD is vacuum deposited on a glass substrate to form a structure with... A hole injection layer of a certain thickness was then formed. Subsequently, NPB, a hole transport compound, was vacuum deposited on the hole injection layer to form a hole injection layer with a hole injection layer of a certain thickness. A hole transport layer of a certain thickness.

[0407] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0408] Compound 100 as the host and fluorescent dopant compound 200 as a dopant are co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The thickness of the emission layer.

[0409] T2T is vacuum deposited on the emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0410] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0411] Yb was vacuum deposited onto the electron transport layer. The thickness was increased, and AgMg was vacuum deposited on it to a thickness of [missing information]. The thickness is such that a cathode is formed, and CPL is vacuum deposited on the cathode to form a structure with... A thick capping layer is applied to complete the fabrication of the light-emitting device.

[0412] Comparison Example 2

[0413] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 1, except that MoO3 is used instead of DNTPD when forming the hole injection layer.

[0414] Example 1

[0415] The light-emitting device was fabricated in a manner substantially the same as that in Comparative Example 1, except that TPBI and MoO3 in a weight ratio of 40:60 were used instead of DNTPD when forming the hole injection layer.

[0416] Example 2

[0417] The light-emitting device was fabricated in essentially the same manner as in Comparative Example 1, except that TPBI and MoO3 (10 wt% doping) were used instead of DNTPD when forming the hole injection layer.

[0418] Compare Example 3

[0419] Will The anode (hereinafter referred to as the “glass substrate”) was cut to a size of 50 mm × 50 mm × 0.7 mm, sonicated for 5 minutes each with isopropanol and pure water, and then cleaned by irradiating it with ultraviolet light and exposing it to ozone for 30 minutes. The glass substrate was then loaded onto a vacuum deposition apparatus.

[0420] DNTPD is vacuum deposited on a glass substrate to form a structure with... A hole injection layer of a certain thickness was then formed. Subsequently, NPB, a hole transport compound, was vacuum deposited on the hole injection layer to form a hole injection layer with a hole injection layer of a certain thickness. A hole transport layer of a certain thickness.

[0421] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0422] Compound 100 as the host and fluorescent dopant compound 200 as a dopant are co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0423] T2T is vacuum deposited on the first emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0424] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0425] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A first n-charge generation layer of thickness is formed, and HAT-CN is vacuum deposited on the first n-charge generation layer to form a structure with... The first p-charge generation layer of thickness.

[0426] NPB, a hole transport compound, is vacuum deposited on the first p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0427] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0428] Compound 100 as the host and fluorescent dopant compound 200 as a dopant are co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The second emission layer has a thickness of [missing information].

[0429] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0430] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0431] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A second n-charge generating layer of thickness is formed, and HAT-CN is vacuum deposited on the second n-charge generating layer to form a structure with... The second p-charge generation layer has a thickness of [missing information].

[0432] NPB, a hole transport compound, is vacuum deposited on the second p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0433] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0434] Compound 100 as the host and fluorescent dopant compound 200 as a dopant are co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The third emission layer has a thickness of [missing information].

[0435] T2T is vacuum deposited on the third emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0436] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0437] Yb was vacuum deposited onto the electron transport layer. The thickness was increased, and AgMg was vacuum deposited on it to a thickness of [missing information]. The thickness is such that a cathode is formed, and CPL is vacuum deposited on the cathode to form a structure with... A capping layer of a certain thickness is used to complete the fabrication of a tandem (or series-type) light-emitting device comprising three emitting layers.

[0438] Compare Example 4

[0439] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 3, except that MoO3 is used instead of DNTPD when forming the hole injection layer.

[0440] Example 3

[0441] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 3, except that TPBI and MoO3 in a weight ratio of 40:60 are used instead of DNTPD when forming the hole injection layer.

[0442] Example 4

[0443] The light-emitting device was fabricated in essentially the same manner as in Comparative Example 3, except that TPBI and MoO3 (10 wt% doping) were used instead of DNTPD when forming the hole injection layer.

[0444] Example 5

[0445] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 3, except that TPBI and MoO3 (10 wt% doping) are used instead of DNTPD when forming the hole injection layer and TPBI and MoO3 (10 wt% doping) are used instead of HAT-CN when forming the first p-charge generation layer.

[0446] Example 6

[0447] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 3, except that TPBI and MoO3 (10 wt% doping) are used instead of DNTPD when forming the hole injection layer and TPBI and MoO3 (10 wt% doping) are used instead of HAT-CN when forming the second p-charge generation layer.

[0448] Example 7

[0449] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 3, except that TPBI and MoO3 (10 wt% doping) are used instead of DNTPD when forming the hole injection layer and TPBI and MoO3 (10 wt% doping) are used instead of HAT-CN when forming the first p-charge generation layer and the second p-charge generation layer, respectively.

[0450] Compare Example 5

[0451] Will The anode (hereinafter referred to as the “glass substrate”) was cut to a size of 50 mm × 50 mm × 0.7 mm, sonicated for 5 minutes each with isopropanol and pure water, and then cleaned by irradiating it with ultraviolet light and exposing it to ozone for 30 minutes. The glass substrate was then loaded onto a vacuum deposition apparatus.

[0452] DNTPD is vacuum deposited on a glass substrate to form a structure with... A hole injection layer of a certain thickness was then formed. Subsequently, NPB, a hole transport compound, was vacuum deposited on the hole injection layer to form a hole injection layer with a hole injection layer of a certain thickness. A hole transport layer of a certain thickness.

[0453] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0454] Compound 100 as the host and fluorescent dopant compound 200 as a dopant are co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0455] T2T is vacuum deposited on the first emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0456] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0457] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A first n-charge generation layer of thickness is formed, and HAT-CN is vacuum deposited on the first n-charge generation layer to form a structure with... The first p-charge generation layer of thickness.

[0458] NPB, a hole transport compound, is vacuum deposited on the first p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0459] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0460] Compound 100 as the host and fluorescent dopant compound 200 as a dopant are co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The second emission layer has a thickness of [missing information].

[0461] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0462] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0463] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A second n-charge generating layer of thickness is formed, and HAT-CN is vacuum deposited on the second n-charge generating layer to form a structure with... The second p-charge generation layer has a thickness of [missing information].

[0464] NPB, a hole transport compound, is vacuum deposited on the second p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0465] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0466] Compound 100 as the host and fluorescent dopant compound 200 as a dopant are co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The third emission layer has a thickness of [missing information].

[0467] T2T is vacuum deposited on the third emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0468] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0469] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A third n-thickness charge-generating layer is formed, and HAT-CN is vacuum-deposited on the third n-th charge-generating layer to form a layer with [missing information]. The third p-charge generation layer of thickness.

[0470] NPB, a hole transport compound, is deposited on the third p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0471] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0472] TPBI as the host and Irppy3 as a phosphorescent dopant compound were co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with… The fourth emission layer has a thickness of [missing information].

[0473] TPM-TAZ and LiQ were co-deposited on the fourth emitter layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0474] Yb was vacuum deposited onto the electron transport layer. The thickness was increased, and AgMg was vacuum deposited on it to a thickness of [missing information]. The thickness is such that a cathode is formed, and CPL is vacuum deposited on the cathode to form a structure with... A capping layer of a certain thickness is used to complete the fabrication of a series (or series-type) light-emitting device comprising four emitting layers.

[0475] Comparison Example 6

[0476] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 5, except that MoO3 is used instead of DNTPD when forming the hole injection layer.

[0477] Example 8

[0478] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 5, except that TPBI and MoO3 in a weight ratio of 40:60 are used instead of DNTPD when forming the hole injection layer.

[0479] Example 9

[0480] The light-emitting device was fabricated in essentially the same manner as in Comparative Example 5, except that TPBI and MoO3 (10 wt% doping) were used instead of DNTPD when forming the hole injection layer.

[0481] Example 10

[0482] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 5, except that TPBI and MoO3 (10 wt% doping) are used instead of DNTPD when forming the hole injection layer and TPBI and MoO3 (10 wt% doping) are used instead of HAT-CN when forming the first p-charge generation layer.

[0483] Example 11

[0484] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 5, except that TPBI and MoO3 (10 wt% doping) are used instead of DNTPD when forming the hole injection layer and TPBI and MoO3 (10 wt% doping) are used instead of HAT-CN when forming the first p-charge generation layer and the second p-charge generation layer, respectively.

[0485] Example 12

[0486] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 5, except that TPBI and MoO3 (10 wt% doping) are used instead of DNTPD when forming the hole injection layer and TPBI and MoO3 (10 wt% doping) are used instead of HAT-CN when forming the second p-charge generation layer and the third p-charge generation layer, respectively.

[0487] Example 13

[0488] The light-emitting device is fabricated in a manner substantially the same as that in Comparative Example 5, except that TPBI and MoO3 (10 wt% doping) are used instead of DNTPD when forming the hole injection layer, and TPBI and MoO3 (10 wt% doping) are used instead of HAT-CN when forming the first p-charge generation layer, the second p-charge generation layer, and the third p-charge generation layer, respectively.

[0489] The hole mobility (M) of the first electron transport compounds DNTPD and TPBI used in the hole injection layer was measured using a single-hole device and a single-electron device space charge confinement current (SCLC) measurement method. H ) and electron mobility (M E The results are shown in Table 1.

[0490] Table 1

[0491] DNTPD <![CDATA[8.8×10 -4 cm 2 / Vs]]> <![CDATA[1×10 -5 cm 2 / Vs]]> TPBI <![CDATA[2×10 -5 cm 2 / Vs]]> <![CDATA[3.3×10 -3 cm 2 / Vs]]>

[0492] To evaluate the characteristics of the light-emitting devices fabricated in Comparative Examples 1 to 6 and Examples 1 to 13, measurements were taken at 10 mA / cm². 2 Drive voltage, efficiency, and lifetime at current density.

[0493] The driving voltage and current density of the light-emitting device were measured using a source instrument (Keithley Instruments, 2400 series), and the efficiency of the light-emitting device was measured using a measuring device C9920-2-12 available from Hamamatsu Photonics.

[0494]

[0495] Table 2

[0496]

[0497] T97 indicates the time required for the brightness to decrease to 97% compared to the initial brightness.

[0498] Referring to Table 2, it can be seen that, compared with the light-emitting devices of Comparative Examples 1 and 2, the light-emitting devices of Examples 1 and 2 have superior characteristics in terms of efficiency and lifetime; compared with the light-emitting devices of Comparative Examples 3 and 4, the light-emitting devices of Examples 3 to 7 have superior characteristics in terms of efficiency and lifetime; and compared with the light-emitting devices of Comparative Examples 5 and 6, the light-emitting devices of Examples 8 to 13 have superior characteristics in terms of efficiency and lifetime.

[0499] Compared with existing light-emitting devices, the light-emitting device according to the embodiments has improved characteristics in terms of efficiency and lifespan.

[0500] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of this disclosure as defined by the claims and their equivalents.

Claims

1. A light-emitting device, the light-emitting device comprising: First electrode; The second electrode faces the first electrode; as well as An interlayer, located between the first electrode and the second electrode, includes an emission layer. The interlayer includes a hole injection layer and an electron transport layer. The hole injection layer comprises a first electron transport compound and an n-type dopant. a hole mobility M of the first electron transport compound H and an electron mobility M E satisfies formula (1): Formula (1) M H ≤ M E × 0.95, The first electron transport compound includes: a compound containing a CN moiety; a compound containing a triazole moiety; a compound containing an oxadiazole moiety; a compound containing an aromatic imidazole moiety; a compound containing a naphthyldiimide moiety; a compound containing a perylene moiety; a boron-containing compound; a compound containing anthracene and phosphine oxide moiety; a compound containing a triazine moiety; a compound containing a pyridine moiety; a compound containing a pyrimidine moiety; or a compound containing a carbazole moiety, and The n-type dopant includes quinone derivatives, cyano compounds, metal oxides, phthalocyanine compounds, or any combination thereof.

2. The light-emitting device according to claim 1, wherein The electron transport layer includes a second electron transport compound, and The first electron transport compound and the second electron transport compound are different from each other.

3. The light emitting device of claim 1, wherein, The first electron transport compound includes at least one selected from the following compounds: 。 4. The light-emitting device according to claim 1, wherein, The n-type dopant includes at least one selected from the following compounds: 。 5. The light-emitting device according to claim 1, wherein, The emission layer includes multiple emission layers.

6. The light-emitting device according to claim 5, wherein, The charge generation layer is located between the plurality of emission layers.

7. The light-emitting device according to claim 6, wherein, The charge-generating layer includes the first electron transport compound.

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