Method for manufacturing semiconductor element and manufacturing system for semiconductor element

Abstract

Provided is a method for manufacturing a semiconductor element and a system for manufacturing a semiconductor element. The method for manufacturing a semiconductor element includes: a first separation step of separating an island (104) of a semiconductor layer from a first substrate (101) by adhering the island (104) of the semiconductor layer to a pickup substrate (113); a pressure bonding step of pressure bonding the island (104) of the semiconductor layer adhered to the pickup substrate (113) to a second substrate (201); a temperature maintaining step of maintaining the temperature of a contact surface of the island (104) of the semiconductor layer and the second substrate (201) at a temperature higher than room temperature during the step of pressure bonding the island (104) of the semiconductor layer to the second substrate (201); and a second separation step of separating the island (104) of the semiconductor layer from the pickup substrate (113) after maintaining the temperature of the contact surface at a temperature higher than room temperature.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a semiconductor device and a system for manufacturing a semiconductor device. Background Technology

[0002] A method for manufacturing a semiconductor element is known in which a semiconductor layer formed on a base substrate is separated from the base substrate and bonded to a different substrate (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent No. 6431631 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] In the semiconductor device manufacturing method disclosed in Patent Document 1, the semiconductor layer is tightly bonded to a pickup substrate in order to separate the semiconductor layer from the base substrate. Then, in order to bond the semiconductor layer tightly bonded to the pickup substrate to a moving target substrate, a load is applied in the direction of pressing the semiconductor layer onto another substrate. If the load applied in the direction of pressing the semiconductor layer onto the moving target substrate is too large, problems such as surface deformation of the pickup substrate and displacement of the semiconductor layer bonded to the moving target substrate may occur. Therefore, it is necessary to reduce the load applied when pressing the semiconductor layer onto the moving target substrate.

[0008] Therefore, the present invention is made in view of these aspects, and its object is to provide a method for manufacturing a semiconductor element that reduces the load applied when bonding a semiconductor layer to a moving target substrate.

[0009] Technical means to solve the problem

[0010] The semiconductor element manufacturing method of the first aspect of the present invention manufactures a semiconductor element by separating a semiconductor layer formed on a first substrate from the first substrate and bonding the semiconductor layer to a second substrate different from the first substrate. The semiconductor element manufacturing method includes: a first separation step in which the semiconductor layer is separated from the first substrate by making a pickup substrate in close contact with the semiconductor layer; a pressing step in which the semiconductor layer in close contact with the pickup substrate is pressed to the second substrate; a temperature holding step in which, during the execution of the step of pressing the semiconductor layer to the second substrate, the temperature of the contact surface between the semiconductor layer and the second substrate is maintained at a temperature higher than room temperature; and a second separation step in which the semiconductor layer is separated from the pickup substrate after the temperature of the contact surface is maintained at a temperature higher than room temperature.

[0011] The method for manufacturing the semiconductor element may further include the step of heating at least one of the second substrate or the pickup substrate during the pressing process. In the method for manufacturing the semiconductor element, prior to the heating step, the following steps may also be performed: obtaining information indicating the material, thickness, or surface condition of the second substrate or the semiconductor layer, and during the heating step, heating at least one of the second substrate or the pickup substrate with a heating amount determined based on the material, thickness, or surface condition of the second substrate or the semiconductor layer. Heating of at least one of the second substrate or the pickup substrate may also begin before the pressing process.

[0012] Alternatively, in the first separation step, the plurality of semiconductor layers can be separated from the first substrate, and in the temperature holding step, a region comprising at least the region corresponding to the plurality of semiconductor layers in close contact with the pickup substrate can be heated.

[0013] Alternatively, during the pressing process, a load may be applied to the pickup substrate toward the second substrate, and during the second separation process, the application of the load to the pickup substrate may be stopped.

[0014] Alternatively, an organic material may be deposited on the surface of the semiconductor layer pressed onto the pickup substrate, and during the pressing process, a load smaller than that required to cause plastic deformation of the organic material may be applied. Alternatively, during the pressing process, the temperature of the contact surface between the semiconductor layer and the second substrate may be maintained between 80 degrees Celsius and 150 degrees Celsius.

[0015] The elastic modulus of the material in the predetermined bonding region of the semiconductor layer pressed onto the second substrate may also be greater than 5 GPa. The surface roughness of the surface of the predetermined bonding region of the semiconductor layer pressed onto the second substrate may also be 1 nm or more, or the PV value may be 10 nm or more.

[0016] Alternatively, in the first separation step, the pickup substrate having holes with an inner diameter smaller than the thickness of the semiconductor layer can be tightly bonded to the semiconductor layer. Alternatively, in the first separation step, the pickup substrate whose surface in contact with the semiconductor layer comprises cellulose porous material or nanocellulose porous material can be tightly bonded to the semiconductor layer.

[0017] The pickup substrate may also include: an adsorption substrate having an air suction hole for drawing air; and an adsorption layer disposed on the adsorption substrate having a hole with an inner diameter smaller than the thickness of the semiconductor layer. In the first separation process, air is drawn from the air suction hole while the adsorption layer is in contact with the semiconductor layer, thereby separating the semiconductor layer from the first substrate.

[0018] The semiconductor device manufacturing system of the second aspect of the present invention includes: a first separation section, which separates the semiconductor layer from the first substrate by bringing a pickup substrate into close contact with a semiconductor layer formed on a first substrate; a pressing section, which presses the semiconductor layer onto a second substrate different from the first substrate by applying a load to the semiconductor layer in close contact with the pickup substrate; a temperature holding section, which maintains the temperature of the contact surface between the semiconductor layer and the second substrate at a temperature higher than room temperature during the pressing of the semiconductor layer onto the second substrate; and a second separation section, which separates the semiconductor layer from the pickup substrate after the temperature holding section has maintained the temperature of the contact surface at a temperature higher than room temperature.

[0019] The effects of the invention

[0020] According to the present invention, the following effect is achieved: the load applied when bonding the semiconductor layer to the moving target substrate can be reduced. Attached Figure Description

[0021] Figure 1A This is a diagram illustrating the process of separating the semiconductor layer from the first substrate.

[0022] Figure 1B This is a diagram illustrating the process of separating the semiconductor layer from the first substrate.

[0023] Figure 2A This is a diagram illustrating the process of bonding islands of a semiconductor layer to a second substrate.

[0024] Figure 2B This is a diagram illustrating the process of bonding islands of a semiconductor layer to a second substrate.

[0025] Figure 3 This diagram illustrates the process following the bonding of the islands of the semiconductor layer to the second substrate.

[0026] Figure 4 A diagram illustrating the structure of a manufacturing system used to implement a method for manufacturing semiconductor devices.

[0027] Figure 5 This diagram shows the confirmation results of the bonding state when islands of semiconductor layers are pressed onto multiple second substrates with different elastic moduli.

[0028] Figure 6 A microscope photograph showing the state of a semiconductor layer bonded to a high elastic modulus material layer with an elastic modulus of about 100 GPa.

[0029] Figure 7This diagram shows the confirmation results of the bonding state when islands of semiconductor layers are pressed onto multiple second substrates with different surface states.

[0030] Figure 8 This diagram illustrates the bonding state when a semiconductor layer is laminated onto a predetermined bonding region formed by a material with a specified elastic modulus and RMS roughness under different loads.

[0031] Figure 9 This diagram illustrates a method for separating islands of a semiconductor layer from a first substrate by vacuum adsorption.

[0032] Figure 10 A diagram illustrating a modified example of the structure of the pickup substrate.

[0033] Explanation of symbols

[0034] 11: Actuator

[0035] 12: Heater

[0036] 13: Control device

[0037] 100: Bonding yield

[0038] 101: First substrate

[0039] 102: Sacrificial Layer

[0040] 103: Semiconductor layer

[0041] 104: Island

[0042] 105: Fixed layer

[0043] 106: Gap

[0044] 111: Organic material layer

[0045] 112: Substrate

[0046] 113: Pick up the substrate

[0047] 131: First Separation Section

[0048] 132: Crimping part

[0049] 133: Temperature Holding Section

[0050] 134: Second Separation Section

[0051] 201: Second substrate

[0052] 211: Materials and Tools

[0053] 213: Pick up the substrate

[0054] 222: Adsorption tools

[0055] 310: Pick up the substrate

[0056] 311: Air suction port

[0057] 312: Adsorption substrate

[0058] 313: Adsorption layer

[0059] 314: Kong

[0060] 315: Pre-defined adsorption area

[0061] 410: High elastic modulus material layer

[0062] 420: Semiconductor layer. Detailed Implementation

[0063] [An overview of semiconductor device manufacturing methods]

[0064] The semiconductor device manufacturing method of this embodiment manufactures a semiconductor device by separating a semiconductor layer formed on a first substrate, which serves as a base substrate, from the first substrate and bonding the semiconductor layer to a second substrate different from the first substrate. In this manufacturing method, separating the semiconductor layer, which is crystallized and grown on the first substrate, from the first substrate and reducing the load applied to the semiconductor layer when bonding the separated semiconductor layer to the second substrate, achieves the effect of stabilizing and improving the quality of the semiconductor device.

[0065] When bonding the semiconductor layer to the second substrate without using an adhesive, compared to a case where the material of the predetermined bonding area on the second substrate is hard and not easily deformable, a greater load is required when pressing the semiconductor layer onto the predetermined bonding area on the second substrate to ensure complete adhesion of the semiconductor layer to the predetermined bonding area. The term "hard and not easily deformable material" refers to a material with a relatively high elastic modulus, while "soft and easily deformable material" refers to a material with a relatively low elastic modulus. Increasing the load when pressing the semiconductor layer onto the predetermined bonding area of ​​the second substrate to improve the adhesion of the semiconductor layer to the predetermined bonding area may lead to various problems, such as those described below.

[0066] First, deformation of the pickup substrate may occur due to the strong pressure of the organic material layer on the pickup substrate used to pick up the semiconductor layer (e.g., plastic deformation of the organic material layer or destruction of the organic material layer), adhesion of the organic material layer to the semiconductor layer, and adhesion of the organic material layer on the outside of the semiconductor layer to the second substrate.

[0067] If the organic material layer on the pickup substrate deforms, problems such as misalignment of the semiconductor layer bonded to the second substrate will occur. Furthermore, if the organic material layer adheres to the semiconductor layer, and the force of the organic material layer adhering to the semiconductor layer is greater than the force of the semiconductor layer bonding to the second substrate, the bonding of the semiconductor layer to the second substrate will be hindered. Moreover, if the organic material layer adheres to the second substrate outside the semiconductor layer, the following problems also arise: the organic material layer adhering to the second substrate contaminates the second substrate, or it becomes difficult to separate the pickup substrate or the organic material layer from the second substrate.

[0068] Furthermore, depending on the material or processing conditions of the bonding area, the surface roughness of the bonding area may sometimes be large. Also, if the structure below the bonding area has irregularities, the surface roughness of the bonding area may increase. In such cases, to ensure that the semiconductor layer is fully and tightly bonded to the bonding area on the second substrate, the following problem arises: compared to cases with low surface roughness, the load required to press the semiconductor layer onto the bonding area on the second substrate needs to be increased.

[0069] Furthermore, a case of "large surface roughness" is defined as, for example, a root mean square (rms) surface roughness exceeding 1 nm measured over a 5 μm × 5 μm area, or a peak-to-valley (PV) value exceeding 10 nm in surface roughness measurements. A case of "small surface roughness" is defined as, for example, an rms surface roughness of less than 1 nm measured over a 5 μm × 5 μm area, or a PV value of less than 10 nm. When the surface roughness of the bonding predetermined area is large, the same problem arises as when the material of the bonding predetermined area on the second substrate is hard and difficult to deform.

[0070] Furthermore, in order to increase the load when bonding a large semiconductor layer to the predetermined bonding area of ​​the second substrate, there is also the following problem: the size of the device for applying the load increases, and the manufacturing cost of the semiconductor element increases.

[0071] To address these issues, the semiconductor device manufacturing method of this embodiment first performs a first separation step, namely, separating the semiconductor layer from a first substrate by tightly attaching a pickup substrate to the semiconductor layer. Next, a pressing step is performed to press the semiconductor layer, which is tightly attached to the pickup substrate, onto a second substrate. During the pressing step onto the second substrate, a temperature holding step is performed to maintain the temperature of the contact surface between the semiconductor layer and the second substrate at a temperature higher than room temperature (e.g., 25°C). After maintaining the temperature of the contact surface at a temperature higher than room temperature, a second separation step is performed to separate the semiconductor layer from the pickup substrate.

[0072] The state during the pressing process refers to a state in which a load is applied between the semiconductor layer and the second substrate, and at least a portion of the semiconductor layer comes into contact with the surface of the predetermined bonding region of the second substrate due to the load. In a process where the temperature of the contact surface is maintained at a temperature higher than room temperature, for example, heating at least one of the second substrate or the pickup substrate such that the temperature of the contact surface is 80°C or higher and 150°C or lower. It can be considered that by heating at least one of the second substrate or the pickup substrate, molecules that weaken the bonding force or are almost unrelated to bonding, present on the surface of the semiconductor layer of the bonding second substrate or the pickup substrate, detach from the surface of the predetermined bonding region, thereby facilitating the bonding of the semiconductor layer to the second substrate. As a result, by performing this process, the load applied to the semiconductor layer when bonding the semiconductor layer to the second substrate can be further reduced compared to conventional methods, thus solving at least one of the aforementioned problems. The manufacturing method will now be described in detail.

[0073] [An example of a semiconductor device manufacturing method]

[0074] (Separation of the semiconductor layer from the first substrate)

[0075] Figure 1A and Figure 1B This is a diagram illustrating the process of separating the semiconductor layer from the first substrate.

[0076] First, such as Figure 1A As shown in (a), a sacrificial layer 102 and a semiconductor layer 103 are formed on a first substrate 101, which serves as a parent substrate. The first substrate 101 is, for example, a semiconductor substrate such as a Si substrate, GaAs substrate, GaN substrate, AlN substrate, InP substrate, or SiC substrate, or an oxide substrate such as an Al2O3 substrate, Ga2O3 substrate, or ZnO substrate.

[0077] The sacrificial layer 102 is a layer that has a higher etching rate to a specified etchant than the etching rate of the first substrate 101 and the semiconductor layer 103. The sacrificial layer 102 is a layer that can be selectively etched away relative to the first substrate 101 and the semiconductor layer 103 by an etching process using a specified etchant.

[0078] Semiconductor layer 103 is a semiconductor layer having a structure for forming a specified semiconductor element. Semiconductor layer 103 may have a single-layer structure or a stacked structure comprising multiple different semiconductor layers.

[0079] Next, as Figure 1A As shown in (b), by means of Figure 1AThe sacrificial layer 102 and semiconductor layer 103 in state (a) are processed to form an island 104 of semiconductor layer. When forming the island 104 of semiconductor layer, a portion of the sacrificial layer 102 and semiconductor layer 103 is removed until the sacrificial layer 102 is exposed to a depth below the side of the island 104 of multiple semiconductor layers.

[0080] Next, as Figure 1A As shown in (c), a fixing layer 105 is formed extending from the island 104 of the semiconductor layer to the exposed surface of the first substrate 101. The fixing layer 105 functions to maintain the semiconductor layer 103 to the first substrate 101 during the process of removing the sacrificial layer 102 by etching. The fixing layer 105 is made of a material resistant to the etching method used to remove the sacrificial layer 102, and can be an inorganic or organic thin film.

[0081] The material of the fixing layer 105 is selected according to the etching method or etching solution used; for example, a photosensitive organic material (resist) can be used. In this case, the fixing layer 105 can be formed by performing an exposure and development process after applying the resist. The fixing layer 105 may cover the entire surface area of ​​the island 104 of the semiconductor layer, or it may cover a portion of the island 104.

[0082] Next, as Figure 1A As shown in (d), the sacrificial layer 102 is etched by a specified etching method, such as wet etching using a specified etchant, to form a gap 106 between the island 104 of the semiconductor layer and the first substrate 101.

[0083] Next, a first separation process is performed to separate the islands 104 of the multiple semiconductor layers from the first substrate 101. First, as... Figure 1B As shown in (a), the pickup substrate 113 is closely bonded to the island 104 of the semiconductor layer. The pickup substrate 113 includes an organic material layer 111 and a substrate 112. That is, the organic material layer 111 is disposed on the surface of the pickup substrate 113 that is pressed against the island 104 of the semiconductor layer. The substrate 112 is made of any material, such as metal, ceramic, or resin. After the organic material layer 111 is connected to the island 104 or the fixing layer 105 of the semiconductor layer, the pickup substrate 113 is moved in the direction in which the fixing layer 105 near the gap 106 is cut (e.g., away from the first substrate 101).

[0084] The result is, such as Figure 1B As shown in (b), the island 104 of the semiconductor layer can be separated from the first substrate 101 while the island 104 of the semiconductor layer is in close contact with the organic material layer 111 on the pickup substrate 113. Figure 1BIn (b), the fixing layer 105 is cut off and separated into a portion 105a of the fixing layer 105 that is lifted together with the island 104 of the semiconductor layer, and a portion 105b that remains on the first substrate side.

[0085] The organic material layer 111 may be made of a photosensitive organic material, for example. In this case, the pattern of the organic material layer 111 corresponding to the pattern of the islands 104 of the semiconductor layer can be formed by coating a liquid photosensitive organic material onto the substrate 112 or by attaching sheet-like photosensitive organic material, using standard exposure and development processes. Alternatively, the organic material layer 111 may also be formed by attaching a pre-formed sheet-like organic material, such as one formed on another substrate, or a sheet of organic material obtained by dividing it, to the substrate 112.

[0086] Furthermore, an organic material sheet with a bump pattern corresponding to the pattern of the island 104 of the semiconductor layer can be prepared by using a mold and attached to the substrate 112, or an organic material sheet with a bump pattern can be used as the substrate 112. Alternatively, the substrate 112 can be omitted; after attaching the organic material sheet prepared by an appropriate method to the island 104 of the semiconductor layer, the island 104 of the semiconductor layer can be separated from the first substrate 101 by lifting the organic material sheet using an appropriate method. Other modifications can be made to the structure of the picking substrate 113 and the method for separating the island 104 of the semiconductor layer from the first substrate 101.

[0087] (Jointing of the semiconductor layer with the second substrate)

[0088] After the island 104 of the semiconductor layer is separated from the first substrate 101 through the above process, the island 104 of the semiconductor layer is bonded to the second substrate 201. Figure 2A and Figure 2B This diagram illustrates the process of bonding the island 104 of the semiconductor layer to the second substrate 201. An inorganic material layer, an organic material layer, a metal material layer, a semiconductor layer, or a stacked structure of these materials may be provided in the predetermined bonding area on the second substrate 201. Alternatively, before bonding the island 104 of the semiconductor layer to the second substrate 201, a surface treatment such as plasma treatment or chemical treatment using a chemical solution may be performed on the island 104 of the semiconductor layer and the predetermined bonding area in the second substrate 201.

[0089] In the predetermined bonding area on the second substrate 201, a hard and non-deformable material (a material with a high elastic modulus) may be provided, for example. The hard and non-deformable material is, for example, a material with an elastic modulus greater than 5 GPa. Examples of materials with an elastic modulus greater than 5 GPa include oxides such as silicon oxide, aluminum oxide, zinc oxide, and gallium oxide; nitrides such as silicon nitride, gallium nitride, aluminum nitride, and titanium nitride; carbides such as diamond, diamond-like carbon, and silicon carbide; and metals or alloys such as aluminum, copper, gold, platinum, nickel, titanium, and germanium. Semiconductor materials with an elastic modulus greater than 5 GPa can include single-element semiconductor materials such as Si and Ge, and compound semiconductor materials such as GaAs, GaN, InP, and SiC. These inorganic, metallic, and semiconductor materials can be bulk materials constituting the second substrate 201, or thick-film or thin-film materials formed on the second substrate 201.

[0090] The surface of the predetermined bonding area on the second substrate can be, for example, a rough surface with an RMS surface roughness exceeding 1 nm measured over a 5 μm × 5 μm area, or a rough surface with a PV value exceeding 10 nm measured for surface roughness. Examples of surfaces with a large surface roughness and a PV value exceeding 10 nm include: cases where an uneven layer exists in the underlying layer, or cases where hillocks or scratches are generated on the material surface during material formation or processing. Examples of hillocks or scratches being generated on the material surface during material formation or processing include: forming a metal thin film layer of Al, an Al-containing alloy, or an Au-containing alloy; annealing the metal thin film layer; or precision processing including machining such as precision grinding or etching using chemical solutions.

[0091] The following is a reference. Figure 2A and Figure 2B The process of pressing the island 104 of the semiconductor layer onto the second substrate 201 will be described in detail. First, as... Figure 2A As shown in (a), the following pressing process is performed: after placing the island 104 of the semiconductor layer separated from the first substrate 101 onto the second substrate 201, a load 210 is applied from above the pickup substrate 113 toward the second substrate 201.

[0092] In the pressing process, a load smaller than that required at room temperature to press and bond the islands 104 of the semiconductor layer to the predetermined bonding area on the second substrate 201 is applied. Ideally, for example, a load smaller than that required to plastically deform the organic material layer 111 of the pick-up substrate 113 is applied during the pressing process.

[0093] like Figure 2AAs shown in (b), the following temperature holding process is performed: during the period when the island 104 of the semiconductor layer is pressed onto the predetermined bonding area on the second substrate 201 by the load 210, the temperature of the surface of the semiconductor layer island 104 in contact with the second substrate 201 is maintained at a temperature higher than room temperature. For example, the temperature of one or both of the second substrate 201 and the pickup substrate 113 is maintained at a temperature higher than room temperature. The time for maintaining the temperature in the heated state can be appropriately specified according to the material or state of the bonding surface. As an example, in the temperature holding process, the heating temperature is maintained for more than 1 second (e.g., 60 seconds).

[0094] In order to maintain the temperature of the contact surface between the island 104 of the semiconductor layer and the second substrate 201 at a temperature higher than room temperature, a region comprising at least the area corresponding to the island 104 of the plurality of semiconductor layers in close contact with the pickup substrate 113 is heated. For example, during the pressing process, a process is performed to heat the position of the island 104 of the semiconductor layer of at least one of the second substrate 201 or the pickup substrate 113.

[0095] Heating of at least one of the second substrate 201 or the pickup substrate 113 can begin after the pressing process has started, or it can begin before the pressing process has started. By starting heating before the pressing process has started, the temperature of the bonding surface is higher than room temperature at the time the pressing process begins, thus shortening the time required for bonding.

[0096] According to the inventors' experiments, the suitable ambient temperature of the second substrate 201 during pressing is between 80°C and 150°C. If the temperature is below 80°C, the bonding effect is insufficient, or a long time is required until the bonding is completed. By maintaining a heating temperature of about 80°C to 100°C, the islands 104 of the semiconductor layer can be well bonded to the second substrate 201 in a short time.

[0097] At temperatures exceeding 150°C, the organic materials used in the process (fixing layer 105, organic material layer 111 on the pickup substrate) may deteriorate. Furthermore, when heated to temperatures exceeding 150°C, the organic material layer 111 on the pickup substrate 113 may sometimes adhere to the islands 104 of the semiconductor layer, making it impossible to remove the organic material layer 111. If the organic material layer 111 adheres to the islands 104 of the semiconductor layer, it becomes a major reason why a portion of the islands 104 of the semiconductor layer detaches from the second substrate 201 during the process of separating the pickup substrate 113 from the second substrate 201.

[0098] Furthermore, even when the islands 104 of the semiconductor layer can be bonded to the second substrate 201, sometimes the organic material layer 111 remains on the islands 104 of the semiconductor layer. When this organic material layer 111 remains on the islands 104 of the semiconductor layer, it hinders subsequent semiconductor device manufacturing processes. Therefore, heating at temperatures exceeding 150°C is not advisable. From the viewpoint of deterioration or residue of the organic material, the heating temperature needs to be adjusted to a range specifically not exceeding 200°C.

[0099] Next, as Figure 2B As shown in (a), heating and pressing are performed simultaneously for a specified time, after which heating is stopped. Furthermore, as... Figure 2B As shown in (b), in the second separation process that separates the island 104 of the semiconductor layer from the pickup substrate 113, the applied load is stopped. A cooling process may also be performed appropriately after heating is stopped. The timing of stopping heating and stopping the application of load is arbitrary; the heating temperature may be lowered while the load is applied and the substrate is pressed. Furthermore, the application of load may be stopped while the substrate is heated.

[0100] (Post-joining treatment)

[0101] In the second separation process, the method by which the island 104 of the semiconductor layer is separated from the pick-up substrate 113 after the load on the pick-up substrate 113 is arbitrary, and for example, the following four methods can be considered.

[0102] (1) Method for chemically dissolving organic material layer 111

[0103] (2) A method of mechanically separating the organic material layer 111 of the pickup substrate 113 from the substrate 112, and then chemically dissolving the organic material layer 111 on the surface of the island 104 of the semiconductor layer.

[0104] (3) A method for mechanically separating the organic material layer 111 of the pickup substrate 113 from the substrate 112, and then mechanically separating the organic material layer 111 attached to the surface of the island 104 of the semiconductor layer.

[0105] (4) A method for mechanically separating the organic material layer 111 from the island 104 of the semiconductor layer

[0106] Chemical dissolution methods include, for example, selectively etching the organic material layer 111. Mechanical separation methods include, for example, pulling and picking up the substrate 113, or stopping the force that pulls the island 104 of the semiconductor layer.

[0107] Figure 3 This diagram illustrates the process following the bonding of the islands 104 of the semiconductor layer to the second substrate 201. After bonding the islands 104 of the semiconductor layer to the second substrate 201, as... Figure 3 (a) and Figure 3 As shown in (b), the pickup substrate 113 is separated from the island 104 of the semiconductor layer bonded to the predetermined bonding region on the second substrate 201.

[0108] As described above, the method for separating the pickup substrate 113 from the island 104 of the semiconductor layer is arbitrary. For example, it can be achieved by dissolving the organic material layer 111 on the substrate 112, which is attached to the island 104 of the semiconductor layer or the fixing layer 105, thereby separating the pickup substrate 113 from the island 104 of the semiconductor layer. Furthermore, Figure 3 The dashed line in (a) schematically represents the organic material layer 111 being dissolved and removed. Alternatively, the organic material layer 111 may not be dissolved, but the pickup substrate 113 may be lifted upwards, thereby mechanically tearing the organic material layer 111 from the island 104 of the semiconductor layer.

[0109] After the pickup substrate 113 is separated from the island 104 of the semiconductor layer, the fixing layer 105a on the island 104 of the conductor layer can also be removed if necessary. If the fixing layer 105a is formed of an organic material (resist material), such as... Figure 3 As shown in (c), the fixing layer 105a can be removed using organic solvents or resist stripping solutions. Then, the prescribed component forming processes, such as interlayer insulating film formation and wiring formation, are performed appropriately. Before performing the prescribed component forming processes, an annealing process suitable for the component forming processes may also be performed. Since excess organic material has been removed, annealing can be performed at a temperature not exceeding 150°C in the annealing process.

[0110] [Semiconductor component manufacturing system]

[0111] Figure 4 This is a diagram showing the structure of the manufacturing system S used in the method for manufacturing a semiconductor element according to this embodiment. Figure 4 Each part of the manufacturing system S shown can be implemented by a single device or by combining multiple devices.

[0112] The manufacturing system S includes an actuator 11, a heater 12, and a control device 13. The control device 13 is, for example, a computer that controls the actuator 11 and the heater 12 by executing a program. The control device 13 has a processor that functions as a first separation section 131, a pressing section 132, a temperature holding section 133, and a second separation section 134 by executing a program.

[0113] The first separation section 131 separates the island 104 of the semiconductor layer from the first substrate 101 by bringing the pickup substrate 113 into close contact with the island 104 of the semiconductor layer. For example, after bringing the pickup substrate 113 into close contact with the island 104 of the semiconductor layer, the first separation section 131 controls the actuator 11 to pull the pickup substrate 113 upward, thereby separating the island 104 of the semiconductor layer from the first substrate 101.

[0114] The pressing unit 132 applies a load to the island 104 of the semiconductor layer that is in close contact with the pickup substrate 113, thereby pressing the island 104 of the semiconductor layer onto the second substrate 201. For example, the pressing unit 132 controls the actuator 11 to move the pickup substrate 113, in a state where the island 104 of the semiconductor layer is in close contact with the second substrate 201, and then lowers the pickup substrate 113 towards the second substrate 201. Then, the pressing unit 132 operates the actuator 11 by applying a predetermined load to the pickup substrate 113. The pressing unit 132 may also apply a load to the pickup substrate 113 based on the material, thickness, or surface condition of the island 104 of the semiconductor layer, or the material and size of the pickup substrate 113.

[0115] During the process of pressing the island 104 of the semiconductor layer onto the second substrate 201, the temperature holding unit 133 controls the heater 12 to maintain the temperature of the contact surface between the island 104 of the semiconductor layer and the second substrate 201 at a predetermined temperature higher than room temperature. The heater 12 functions as a heat source and can be disposed on the side of the second substrate 201, the side of the pickup substrate 113, or both the side of the second substrate 201 and the pickup substrate 113. The temperature holding unit 133 can also acquire information related to the material, thickness, or surface condition of the second substrate 201 and the island 104 of the semiconductor layer, and determine the heating amount of the heater 12 based on the acquired information.

[0116] For example, if the island 104 of the second substrate 201 and the semiconductor layer is made of a material that is difficult to bond, the temperature holding section 133 increases the heating amount compared to the case where the island 104 of the second substrate 201 and the semiconductor layer is made of a material that is easy to bond. Moreover, if the thickness of the second substrate 201 or the island 104 of the semiconductor layer is large, the temperature holding section 133 increases the heating amount compared to the case where the thickness of the second substrate 201 or the island 104 of the semiconductor layer is small.

[0117] Furthermore, the temperature holding section 133 increases the heating amount when the surface roughness of the second substrate 201 or the island 104 of the semiconductor layer is large, compared to when the roughness is small. The roughness is, for example, expressed as the distance between the most prominent position and the most recessed position on the surface of the island 104 in a direction orthogonal to the surface of the island 104. By operating the temperature holding section 133 in this way, the manufacturing system S can shorten the bonding time even when the second substrate 201 and the island 104 of the semiconductor layer are difficult to bond.

[0118] After the temperature holding section 133 maintains the temperature of the contact surface between the island 104 of the semiconductor layer and the second substrate 201 at a temperature higher than room temperature, the second separation section 134 separates the island 104 of the semiconductor layer from the pickup substrate 113. For example, the second separation section 134 separates the island 104 of the semiconductor layer from the pickup substrate 113 while the island 104 of the semiconductor layer is bonded to the second substrate 201 by moving the actuator 11 upward.

[0119] [Experimental Results]

[0120] (First Experiment)

[0121] The inventors discovered through experiments that by pressing the islands 104 of the semiconductor layer onto the second substrate 201 under low load while simultaneously heating, the islands 104 of the semiconductor layer can be well bonded to the second substrate 201. In a first experiment, multiple materials with different elastic moduli were used in the predetermined bonding area of ​​the second substrate 201. The bonding state (i.e., bonding yield) was compared between cases where a heating process was performed during the pressing of the islands 104 of the semiconductor layer onto the predetermined bonding area of ​​the second substrate 201 and cases where no heating process was performed during pressing. The results showed that even when using a material with a high elastic modulus as the material for the second predetermined bonding area, by incorporating the heating process, a significant improvement in the bonding state (i.e., a significant improvement in bonding yield) was achieved with a low pressing load.

[0122] Figure 5 This is a diagram showing the confirmation result of the bonding state when the island 104 of the semiconductor layer is pressed onto multiple second substrates 201 with different elastic moduli. Figure 5 The horizontal axis represents the elastic modulus of the material in the predetermined bonding area of ​​the second substrate 201, and the vertical axis represents the bonding yield. A bonding yield of 100% corresponds to the state in which the island 104 of the semiconductor layer is normally bonded to the second substrate 201, and a bonding yield of 0% corresponds to the state in which the island 104 of the semiconductor layer is not bonded to the second substrate 201.

[0123] Figure 5 The diamond symbol (◇) indicates the result when the heating process is not performed during crimping, and the circle symbol (○) indicates the result when the heating process is performed during crimping. In this experiment, a III-V compound semiconductor layer is used as a representative example of the semiconductor layer. Ideally, the semiconductor layer should be thin, for example, approximately 10 μm or less. If the semiconductor layer is thick, the bonding surface of the semiconductor layer will not easily adhere closely to the surface of the predetermined bonding area of ​​the second substrate 201. Figure 5 As shown, it can be confirmed that when a material with an elastic modulus approximately greater than 5 GPa is used as the material for the bonding predetermined area of ​​the second substrate 201, the bonding yield is significantly improved by performing the heating process of this embodiment.

[0124] Figure 6 This is a micrograph showing the state in which a semiconductor layer 420 is bonded to a high elastic modulus material layer 410 with an elastic modulus of approximately 100 GPa by performing a heating process during low-load pressing. The load on which the semiconductor layer 420 is pressed onto the high elastic modulus material layer 410 formed on the second substrate 201 is 0.4 × P0 (kg / cm). 2 Furthermore, P0 is used to convert the dimensionless load parameters obtained from the experimental setup into [kg / cm²]. 2 The conversion constant for the unit load. That is, P0 is the reference value corresponding to the magnitude of the applied load.

[0125] On the other hand, in the experiment of pressing a high elastic modulus material layer 410 with an elastic modulus of approximately 100 GPa onto a semiconductor layer 420 at room temperature, even when the load was set to 15 × P0 (kg / cm²), 2 Furthermore, the pressed semiconductor layer 420 detaches from the high elastic modulus material layer 410 and cannot be bonded to it. In other words, it can be confirmed that by performing a heating process during the pressing of the semiconductor layer 420 onto the high elastic modulus material layer 410 with an elastic modulus of approximately 100 GPa, thereby applying a load of less than 1 / 30th that of the room temperature pressing case, the semiconductor layer 420 can be bonded to the high elastic modulus material layer 410 with an elastic modulus of approximately 100 GPa.

[0126] As described above, it can be confirmed that by performing a heating process during the pressing of the semiconductor layer onto the second substrate 201, the load required for bonding can be reduced even if the predetermined bonding area of ​​the second substrate 201 is formed of a material with a high elastic modulus. It can be inferred that by performing a heating process during pressing, molecules that weaken the bonding force or are almost unrelated to bonding present on the bonding surface will detach from the surface of the predetermined bonding area, thereby facilitating the bonding of the semiconductor layer to the second substrate 201.

[0127] Furthermore, by performing a heating process during the pressing process, the interaction between atoms or molecules that enhance the bonding force on the surface of the predetermined bonding area, or between atoms or molecules that are strongly related to bonding, increases, thereby increasing the mutual pulling force between the surfaces of the predetermined bonding area, thus making it easier for the semiconductor layer to bond to the second substrate 201.

[0128] (Second Experiment)

[0129] In the second experiment, multiple materials with different surface roughness were used in the bonding predetermined area of ​​the second substrate 201. The bonding state was compared between the case where a heating process was provided in the pressing process of pressing the island 104 of the semiconductor layer onto the bonding predetermined area of ​​the second substrate 201 and the case where no heating process was provided in the pressing process.

[0130] Figure 7 This diagram shows the confirmation results of the bonding state when the island 104 of the semiconductor layer is pressed onto multiple second substrates 201 with different surface conditions. The load applied to the island 104 of the semiconductor layer is 5 × P0 (kg / cm²). 2 ). Figure 7 The horizontal axis of (a) represents the RMS surface roughness, and the vertical axis represents the bonding yield. Figure 7 In (b), the horizontal axis represents the surface PV value, and the vertical axis represents the bonding yield. Figure 5 Similarly, the diamond symbol (◇) indicates the result of not performing the heating process, and the circle symbol (○) indicates the result of performing the heating process.

[0131] like Figure 7 (a) and Figure 7 As shown in (b), it can be confirmed that even when the surface roughness of the predetermined bonding area is greater than 1 nm to 10 nm, and the PV value is greater than 10 nm to 140 nm, the bonding yield can be approximately 100% by performing a heating process in the pressing process, and the bonding can be well achieved.

[0132] On the other hand, when pressing is performed at room temperature, even if 15×P0 (kg / cm) is applied... 2 When subjected to a load of ), the island 104 of the semiconductor layer also detaches from the predetermined bonding region, making it impossible to bond the island 104 of the semiconductor layer to the predetermined bonding region. That is, it can be confirmed that by performing a heating process during crimping, the magnitude of the load applied for bonding can be set to at least 1 / 3 or less of the load required for bonding at room temperature.

[0133] (Third Experiment)

[0134] Figure 8 This diagram illustrates the bonding state when a semiconductor layer is laminated onto a predetermined bonding region formed by a material with a specified elastic modulus and RMS roughness under different loads. Figure 8 The circle symbol (○) indicates the result of performing a heating process during crimping. Figure 8 The dashed line shown is obtained by extrapolating the experimental data indicated by the circle (○). Figure 8 The horizontal axis represents the load parameter, which is the load when pressing the semiconductor layer divided by the conversion factor P0.

[0135] Figure 8 (a) shows the result when the elastic modulus of the material in the predetermined bonding region of the second substrate 201 is about 100 GPa and the rms roughness is about 1 nm, which allows the applied load to be reduced to 0.03 × P0 (kg / cm²). 2 The magnitude of this load is... Figure 7 The load applied in the experiment shown was less than 1 / 100. Figure 8 (b) shows the result when the elastic modulus of the material in the predetermined bonding region on the second substrate 201 is about 180 GPa and the rms roughness is about 10 nm, which allows the applied load to be reduced to 0.5 × P0 (kg / cm²). 2 The magnitude of this load is... Figure 7 The load applied in the experiment shown is 1 / 10.

[0136] [First variation of substrate picking]

[0137] The above description illustrates the case where the island 104 of the semiconductor layer is separated from the first substrate 101 using a pickup substrate 113 containing an organic material layer 111. However, the semiconductor layer 103 can also be separated using a vacuum adsorption method or an electromagnetic adsorption method.

[0138] Figure 9 This is a diagram illustrating a method for separating the island 104 of the semiconductor layer from the first substrate 101 by vacuum adsorption. Figure 9 The pickup substrate 213 shown has a material tool 211 and an adsorption tool 222. The material tool 211 includes organic material on at least its surface. The adsorption tool 222 is a tool that includes an adsorption mechanism such as vacuum adsorption. Figure 9 Arrow 231 indicates the direction of airflow for adsorption. By using this pickup substrate 213, the islands 104 of the semiconductor layer can be adsorbed by the adsorption tool 222 after the organic material on the surface of the material tool 211 is brought into close contact with the islands 104 of the semiconductor layer, thereby separating the islands 104 of the semiconductor layer from the first substrate 101.

[0139] Furthermore, the above description illustrates the case where a fixing layer 105 is formed to fix the island 104 of the semiconductor layer to the first substrate 101, but the manufacturing method of this embodiment can be applied even if the fixing layer 105 is not formed.

[0140] [Second variation of substrate pickup]

[0141] Figure 10 This diagram illustrates the structural example of the pickup substrate 310 in this modified example. (See diagram below.) Figure 10As shown, the pickup substrate 310 is a tool having an adsorption substrate 312 with an air suction hole 311 and an adsorption layer 313. The air suction hole 311 is a path for drawing in air.

[0142] The adsorption layer 313 is formed, for example, of a fibrous or porous material, and has fine pores 314 with an inner diameter smaller than the thickness of the semiconductor layer. The porous material is, for example, a cellulose porous body or a nanocellulose porous body. In cellulose porous bodies and nanocellulose porous bodies, the pores exist irregularly, but... Figure 10 The location of the micropores is depicted with straight lines. Figure 10 The dashed line represents the adsorption predetermined region 315, which is the region of island 104 that serves as the adsorption semiconductor layer.

[0143] The feature of this variation is that, in the steps of separating the island 104 of the semiconductor layer from the first substrate 101 and bonding the island 104 of the semiconductor layer to the second substrate 201, a pick-up substrate 310 is used to vacuum-adsorb the island 104 of the semiconductor layer and maintain it in this state. The pick-up substrate 310 is a porous material having holes 314 with minute diameters formed.

[0144] If the semiconductor layer is only a few μm thick, and the aperture of the holes 314 formed in the porous material of the pickup substrate 310 is large, or the surface unevenness is large, when a load is applied to the island 104 of the semiconductor layer, the load magnitude becomes uneven due to the holes 314 or the surface unevenness, which may cause cracking of the semiconductor layer. Furthermore, there is a risk that the load magnitude differs between the location of the holes 314 and other locations, or that there are unloaded areas, leading to poor bonding. There is also a risk that during vacuum adsorption, the suction force at the location of the holes 314 is large, causing cracking of the semiconductor layer. From these perspectives, the holes 314 formed in the adsorption layer 313 of the pickup substrate 310 used for vacuum adsorption of the island 104 of the semiconductor layer have a sufficiently small aperture, and the surface unevenness of the adsorption layer 313 is sufficiently small. Ideally, the inner diameter of the holes 314 formed in the adsorption layer 313 is smaller than the thickness of the semiconductor layer.

[0145] The cross-sectional area of ​​the air suction hole 311 is, for example, larger than the cross-sectional area of ​​the fine pores 314 formed in the adsorption layer 313. When the adsorption layer 313 is thin and easily deformable, the pores of the air suction hole 311 are ideally located further outward than the predetermined adsorption region 315. By configuring the air suction hole 311 in this way, the force generated by air suction is not directly applied to the region of the adsorption layer 313 corresponding to the predetermined adsorption region 315, thus suppressing deformation of the adsorption layer 313 in the predetermined adsorption region 315. Furthermore, if the deformation of the adsorption layer 313 is limited to a range that does not affect the adsorption of the island 104 of the semiconductor layer and the load applied to the island 104 of the semiconductor layer, the air suction hole 311 can also be configured to be located within the predetermined adsorption region 315 of the island 104 of the semiconductor layer.

[0146] Available Figure 10 The pickup substrate 310, as shown, separates the islands 10 of the semiconductor layer from the first substrate 101 in the following order, and then bonds the separated islands 104 of the semiconductor layer to the second substrate 201. First, air is drawn from the air suction hole 311 while the adsorption layer 313 is in contact with the islands 104 of the semiconductor layer, thereby separating the islands 104 of the semiconductor layer from the first substrate 101. Specifically, as shown... Figure 1B As shown in (a), a pickup substrate 310 is used to adsorb the island 104 of the semiconductor layer, which has a void 106 formed on its lower surface. After adsorbing the island 104 of the semiconductor layer, the pickup substrate 310 is moved in the direction where the fixing layer 105 breaks at the void 106, thereby separating the island 104 of the semiconductor layer from the first substrate 101.

[0147] Next, the island 104 of the semiconductor layer is pressed onto the predetermined bonding area of ​​the second substrate 201. Alternatively, before pressing the island 104 of the semiconductor layer onto the second substrate 201, surface treatment such as plasma treatment can be performed on the bonding surface between the island 104 of the semiconductor layer and the predetermined bonding area of ​​the second substrate 201. For example, atmospheric pressure plasma can be used during plasma treatment.

[0148] If the elastic modulus of the material in the predetermined bonding region of the second substrate 201 is greater than 5 GPa, the RMS surface roughness is greater than 1 nm, or the surface PV value is greater than 10 nm, the temperature of the bonding surface is set to a temperature in the range of approximately 80°C to 150°C by heating one or both of the second substrate 201 or the pickup substrate 310. The pickup substrate 310 is then separated from the island 104 of the semiconductor layer by stopping the adsorption action based on the pickup substrate 310 after maintaining the press-fit state for an appropriate time.

[0149] In this modified manufacturing method, a pickup substrate 310 containing at least an adsorption layer 313 is used to adsorb the islands 104 of the semiconductor layer. The islands 104 of the semiconductor layer are separated from the first substrate 101 and bonded to the second substrate 201. The adsorption layer 313 has tiny pores 314 with an inner diameter smaller than the thickness of the semiconductor layer (more preferably below the nanometer level). By setting it in this way, less uneven adsorption and pressing forces can be applied to the surface of the semiconductor layer, preventing defects such as cracking of the islands 104 of the semiconductor layer.

[0150] Alternatively, the adsorption layer 313 in contact with the islands 104 of the semiconductor layer can be formed from an organic material layer with micropores and gas flow paths. Furthermore, the adsorption layer 313 can also be made of Si, glass, or ceramic materials with micropores or gas flow paths. Moreover, the adsorption layer 313 can be formed in a bump shape. Furthermore, the pickup substrate 310 can have multiple bump-shaped adsorption layers 313, simultaneously adsorbing multiple islands 104 of the semiconductor layer, allowing the islands 104 of the semiconductor layer to separate from the first substrate 101.

[0151] [Other variations]

[0152] Figure 1A , Figure 1B , Figure 2A and Figure 2B The example illustrates a case where two predetermined bonding regions are provided on a second substrate 201, and islands 104 of two semiconductor layers are bonded to the second substrate 201. However, the number of islands 104 of semiconductor layers bonded to the second substrate 201 is arbitrary. When multiple islands 104 of semiconductor layers are bonded to the second substrate 201, the efficiency of the bonding process can be improved by simultaneously pressing multiple islands 104 of semiconductor layers onto the second substrate 201 while maintaining the temperature of the second substrate 201 or the pickup substrate 113 at a temperature higher than room temperature.

[0153] Alternatively, the process of pressing an island 104 of a semiconductor layer onto the second substrate 201 can be repeated while maintaining the temperature of the second substrate 201 or the pickup substrate 113 at a temperature higher than room temperature, thereby pressing multiple islands 104 of semiconductor layers onto the second substrate 201. In this case, the pickup substrate 113 does not need to simultaneously adsorb multiple islands 104 of semiconductor layers, thus enabling the pickup substrate 113 to be miniaturized, and making it easier to separate the pickup substrate 113 from the islands 104 of the semiconductor layers in the second separation process.

[0154] Furthermore, the above description illustrates a case where a semiconductor layer 103 is formed on a sacrificial layer 102 provided on the first substrate 101, and the islands 104 of the semiconductor layer are separated from the first substrate 101 by selectively etching away the sacrificial layer 102. However, it is also possible to separate the islands 104 of the semiconductor layer from the first substrate 101 by combining the materials of the semiconductor layer 103 and the first substrate 101 without providing a sacrificial layer 102, and by utilizing anisotropic etching of the surface of the first substrate 101. Moreover, it is also possible to separate the islands 104 of the semiconductor layer from the first substrate 101 by providing a material layer (such as graphite) that is easily separated in layers between the semiconductor layer 103 and the first substrate 101.

[0155] [Effects of the manufacturing method of this embodiment]

[0156] As explained above, by heating the bonding surface by increasing the temperature during the pressing of the island 104 of the semiconductor layer onto the second substrate 201, even when the material of the predetermined bonding area on the second substrate 201 is hard and not easily deformed, or when the surface roughness of the predetermined bonding area on the second substrate 201 is large, the load required for bonding can be reduced compared to the past. As a result, large deformation caused by the strong pressing of the organic material layer 111 on the pickup substrate 113 by the island 104 of the semiconductor layer can be suppressed. Moreover, the adhesion of the organic material layer 111 to the island 104 of the semiconductor layer, or the adhesion of the organic material layer 111 to the second substrate 201 outside the island 104 of the semiconductor layer, can also be suppressed.

[0157] Furthermore, the load applied during pressing is reduced, thereby preventing positional displacement relative to the predetermined bonding position or contamination around the bonded semiconductor layer. Moreover, even when the total area of ​​the bonded semiconductor layers is large, the overall load can be kept low. In addition, when the predetermined bonding area on the second substrate 201 is provided with a material with an elastic modulus of less than 5 GPa (e.g., polyethylene terephthalate (PET), polyimide (PI), or other organic materials), the load on the predetermined bonding area of ​​the semiconductor layer 104 pressed onto the second substrate 201 can be further reduced compared to bonding at room temperature.

[0158] The present invention has been described above using embodiments, but the technical scope of the present invention is not limited to the scope described in the embodiments, and various modifications and alterations can be made within its scope. For example, all or part of the device can be functionally or physically distributed or integrated in any unit. Moreover, new embodiments generated by any combination of multiple embodiments are also included in the embodiments of the present invention. The effects of new embodiments generated by combination also include the effects of the original embodiments.

Claims

1. A method for manufacturing a semiconductor device, comprising separating a plurality of islands of a semiconductor layer formed on a first substrate from the first substrate and bonding the plurality of islands to a second substrate different from the first substrate, thereby manufacturing a semiconductor device, wherein the method for manufacturing the semiconductor device includes: In the first separation process, after the pickup substrate is brought into close contact with the first island contained in the plurality of islands, the pickup substrate is moved away from the first substrate, thereby separating the first island from the first substrate. In the pressing process, the first island is pressed onto the second substrate by applying a load smaller than that required to press the first island onto the second substrate at room temperature, such that the first island is joined to the second substrate, and the portion of the picking substrate is not fixed to the outside of the first island, while keeping the temperature of the contact surface between the first island and the second substrate above 80 degrees and below 150 degrees. In the temperature holding process, during the process of pressing the first island onto the second substrate, the temperature of the contact surface between the first island and the second substrate is maintained at a temperature higher than room temperature. as well as In the second separation process, the temperature of the contact surface is maintained at a temperature higher than room temperature, causing the first island to separate from the pickup substrate. After performing the second separation process on the first island, the first separation process to the second separation process is performed on the second island, which is different from the first island, among the plurality of islands.

2. The method for manufacturing a semiconductor device according to claim 1 further includes the following steps: During the crimping process, at least one of the second substrate or the pickup substrate is heated.

3. The method for manufacturing a semiconductor element according to claim 2, wherein, Prior to the heating process, the following process is also performed: obtaining information indicating the material, thickness, or surface condition of the second substrate or the plurality of islands. In the heating process, at least one of the second substrate or the pickup substrate is heated with a heating amount determined based on the material, thickness or surface condition of the second substrate or the plurality of islands.

4. The method for manufacturing a semiconductor element according to any one of claims 1 to 3, wherein, Before starting the pressing process, heating of at least one of the second substrate or the pickup substrate is started.

5. A method for manufacturing a semiconductor element according to any one of claims 1 to 3, wherein, In the first separation process, the plurality of first islands are separated from the first substrate. In the temperature holding process, a region comprising at least the following area is heated, the region corresponding to a plurality of first islands in close contact with the pickup substrate.

6. A method for manufacturing a semiconductor element according to any one of claims 1 to 3, wherein, In the pressing process, a load is applied to the pickup substrate toward the second substrate. In the second separation process, the load applied to the pickup substrate is stopped.

7. The method for manufacturing a semiconductor device according to claim 6, wherein, An organic material is disposed on the surface of the pickup substrate that is pressed against the first island. In the pressing process, a load smaller than that required to cause plastic deformation of the organic material is applied.

8. A method for manufacturing a semiconductor element according to any one of claims 1 to 3, wherein, The elastic modulus of the material in the second substrate that is pressed into the predetermined bonding region of the first island is greater than 5 GPa.

9. A method for manufacturing a semiconductor element according to any one of claims 1 to 3, wherein, The root mean square surface roughness of the surface of the bonding predetermined area of ​​the first island in the second substrate is 1 nm or more, or the PV value is 10 nm or more.

10. A method for manufacturing a semiconductor element according to any one of claims 1 to 3, wherein, In the first separation process, the pickup substrate, which has holes with an inner diameter smaller than the thickness of the first island, is brought into close contact with the first island.

11. The method for manufacturing a semiconductor device according to claim 10, wherein, In the first separation process, the pickup substrate, whose surface in contact with the first island contains cellulose porous material or nanocellulose porous material, is closely attached to the first island.

12. A method for manufacturing a semiconductor element according to any one of claims 1 to 3, wherein, The pickup substrate includes: an adsorption substrate having air suction holes for drawing in air; and an adsorption layer disposed on the adsorption substrate having holes with an inner diameter smaller than the thickness of the first island. In the first separation process, air is drawn from the air suction hole while the adsorption layer is in contact with the first island, thereby separating the first island from the first substrate.

13. A semiconductor device manufacturing system, comprising: The first separation section separates the first island from the first substrate by making the pickup substrate closely contact the first island of a plurality of islands containing a semiconductor layer formed on the first substrate, and then moving the pickup substrate away from the first substrate. The pressing part applies a load to the first island, which is in close contact with the pickup substrate, thereby pressing the first island onto a second substrate that is different from the first substrate; The temperature holding section maintains the temperature of the contact surface between the first island and the second substrate at a temperature of 80 degrees or higher and 150 degrees or lower during the period when the first island is pressed onto the second substrate. as well as In the second separation section, the temperature holding section maintains the temperature of the contact surface at a temperature higher than room temperature, thereby causing the first island to separate from the pickup substrate. The pressing portion applies a load to the first island that is smaller than the load required to bond the first island to the second substrate at room temperature, and the pickup substrate is not fixed to the outside of the first island, thereby pressing the first island to the second substrate. After the first island is separated from the pickup substrate, the first separation section, the pressing section, and the second separation section are performed on the second island, which is different from the first island, among the plurality of islands.

14. A method for manufacturing a semiconductor element, comprising separating a plurality of islands of a semiconductor layer formed on a first substrate from the first substrate and bonding the plurality of islands to a second substrate different from the first substrate, wherein the method for manufacturing the semiconductor element includes: In the first separation process, after the organic material layer of the pickup substrate is closely attached to the first island contained in the plurality of islands, the pickup substrate is moved away from the first substrate, thereby separating the first island from the first substrate. In the pressing process, the first island is pressed onto the second substrate by applying a load smaller than that required to cause plastic deformation of the organic material layer to the first island while keeping the temperature of the contact surface between the first island and the second substrate above 80 degrees and below 150 degrees. In the temperature holding process, during the process of pressing the first island onto the second substrate, the temperature of the contact surface between the first island and the second substrate is maintained at a temperature higher than room temperature. as well as In the second separation process, the temperature of the contact surface is maintained at a temperature higher than room temperature, causing the first island to separate from the pickup substrate. After performing the second separation process on the first island, the first separation process to the second separation process is performed on the second island, which is different from the first island, among the plurality of islands.

15. A semiconductor device manufacturing system, comprising: The first separation section separates the first island from the first substrate by making the organic material layer of the pickup substrate closely adhere to the first island of a plurality of islands containing a semiconductor layer formed on the first substrate, and then moving the pickup substrate away from the first substrate. The pressing part applies a load to the first island, which is in close contact with the pickup substrate, thereby pressing the first island onto a second substrate that is different from the first substrate; The temperature holding section maintains the temperature of the contact surface between the first island and the second substrate at a temperature of 80 degrees or higher and 150 degrees or lower during the period when the first island is pressed onto the second substrate. as well as In the second separation section, the temperature holding section maintains the temperature of the contact surface at a temperature higher than room temperature, thereby causing the first island to separate from the pickup substrate. The pressing section applies a load smaller than that required to cause plastic deformation of the organic material layer to the first island onto the second substrate while maintaining the temperature of the contact surface between the first island and the second substrate at a temperature higher than room temperature, thereby pressing the first island onto the second substrate. After the first island is separated from the pickup substrate, the first separation section, the pressing section, and the second separation section are performed on the second island, which is different from the first island, among the plurality of islands.

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