Light emitting device and electronic device including the same

Abstract

The present application provides a light-emitting device and an electronic device including the same. The light-emitting device includes a first electrode; a second electrode facing the first electrode; and a sandwich layer disposed between the first electrode and the second electrode and including an emission layer, wherein the emission layer includes a first emission layer and a second emission layer, the first emission layer includes a first dopant and a second dopant, wherein the second dopant is an electron-trapping dopant, and the second emission layer includes a third dopant and a fourth dopant, wherein the fourth dopant is a hole-trapping dopant.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2020-0114861, filed with the Korean Intellectual Property Office on September 8, 2020, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] One or more embodiments relate to a light-emitting device and an electronic device including the same. Background Technology

[0004] The light-emitting device is a self-emitting device, which, compared with other devices in the field, has a wide viewing angle, high contrast, short response time, and superior characteristics in terms of brightness, driving voltage and response speed.

[0005] In a light-emitting device, a first electrode is disposed on a substrate, and a hole transport region, an emitter layer, an electron transport region, and a second electrode are sequentially formed on the first electrode. Holes supplied from the first electrode can move to the emitter layer through the hole transport region, and electrons supplied from the second electrode can move to the emitter layer through the electron transport region. Charge carriers, such as holes and electrons, recombine in the emitter layer to generate excitons. These excitons transition from an excited state to the ground state, thereby generating light. Summary of the Invention

[0006] One or more embodiments include a device for a high-fluorescence system in which the luminescent region is maximized.

[0007] Other aspects will be set forth in part in the description which follows, and in part will be apparent from the detailed description, or may be learned by practicing the exemplary embodiments presented in this disclosure.

[0008] According to one or more aspects of the embodiments, the light-emitting device includes:

[0009] First electrode,

[0010] The second electrode facing the first electrode, and

[0011] An interlayer comprising an emission layer disposed between the first and second electrodes.

[0012] The emission layer includes a first emission layer and a second emission layer.

[0013] The first emitter layer includes a first dopant and a second dopant, wherein the second dopant is an electron-trapping dopant, and

[0014] The second emitter layer includes a third dopant and a fourth dopant, wherein the fourth dopant is a hole trapping dopant.

[0015] According to one or more aspects of the embodiments, the electronic device includes a light-emitting device. Attached Figure Description

[0016] The above and other aspects, features, and advantages of certain embodiments of this disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, wherein:

[0017] Figure 1 This is a schematic diagram of a light-emitting device according to an exemplary embodiment;

[0018] Figure 2 This is a cross-sectional view of a light-emitting device according to another exemplary embodiment; and

[0019] Figure 3 This is a cross-sectional view of a light-emitting device according to another exemplary embodiment. Detailed Implementation

[0020] The embodiments will now be described in detail with examples of which are shown in the accompanying drawings, wherein the same reference numerals refer to the same elements throughout. In this respect, the embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the figures to explain aspects of this description. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. Furthermore, expressions such as “at least one,” when preceding a column of elements, modify the entire column of elements, rather than a single element of that column.

[0021] It should be understood that when a component is referred to as being "on" another component, it can be directly on the other component, or there can be intermediate components in between. Conversely, when a component is referred to as being "directly on" another component, there are no intermediate components.

[0022] It should be understood that when a component is referred to as being "on" another component, "connected to", "electrically connected to", or "coupled to" another component, it may be directly on the other component, directly connected to, electrically connected to, or coupled to the other component, or there may be an intermediate component.

[0023] It should be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or parts, these elements, components, areas, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or part from another element, component, area, layer, or part. Therefore, the terms “first element,” “first component,” “first area,” “first layer,” or “first part” discussed below may be designated as a second element, second component, second area, second layer, or second part without departing from the teachings of this document.

[0024] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a,” “an,” “the,” and “at least one” do not indicate a limitation of quantity but are intended to cover both singular and plural unless the context clearly indicates otherwise. For example, “element” has the same meaning as “at least one element” unless the context clearly indicates otherwise.

[0025] "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the related listed items. It should be further understood that when the terms "comprises" and / or "comprising" or "includes" and / or "including" are used in this specification, they specify the presence of the specified features, areas, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, areas, integers, steps, operations, elements, components, and / or groups thereof.

[0026] Furthermore, relative terms, such as “below” or “bottom” and “above” or “top,” are used herein to describe the relationship between one element and another as shown in the figures. It should be understood that relative terms are intended to cover different orientations of the device beyond those depicted in the figures. For example, if a device in a figure is flipped, an element described as being “below” the other element will be oriented “above” the other element. The exemplary term “below” can thus cover both “below” and “above” orientations, depending on the specific orientation of the figure. Similarly, if a device in a figure is flipped, an element described as being “below” or “under” the other element will be oriented “above” the other element. The exemplary terms “below” or “under” can thus cover both “above” and “below” orientations.

[0027] As used herein, “about” or “approximately” includes a specified value and means within an acceptable range of deviations from the specified value determined by consideration of the measurement discussed and the error (i.e., limitations of the measurement system) associated with the measurement of the specified quantity, which is to be taken into account by a person skilled in the art. For example, “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the specified value.

[0028] Unless otherwise specified, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It should be further understood that terms, such as those defined in commonly used dictionaries, shall be interpreted as having meanings consistent with their meanings in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0029] This document describes exemplary embodiments with reference to cross-sectional views as illustrative examples of idealized implementations. Therefore, variations in the shape of the illustrations should be expected, for example, due to manufacturing techniques and / or tolerances. Consequently, the embodiments described herein should not be construed as limited to the specific shapes of the areas shown herein, but rather include deviations in shape, for example, due to manufacturing processes. For instance, areas illustrated or described as flat may generally have rough and / or non-linear characteristics. Furthermore, acute angles in the illustrations may be rounded. Therefore, the areas shown in the figures are schematic in nature, and their shapes are not intended to represent the precise shapes of the areas, nor are they intended to limit the scope of these claims.

[0030] This disclosure provides a light-emitting device comprising:

[0031] First electrode;

[0032] The second electrode facing the first electrode; and

[0033] An interlayer comprising an emission layer disposed between the first and second electrodes.

[0034] The emission layer includes a first emission layer and a second emission layer.

[0035] The first emitter layer includes a first dopant and a second dopant, wherein the second dopant is an electron-trapping dopant, and

[0036] The second emitter layer includes a third dopant and a fourth dopant, wherein the fourth dopant is a hole trapping dopant.

[0037] It should be understood that the term "second dopant" is used interchangeably with the term "electron trapping dopant." Similarly, it should be understood that the term "fourth dopant" is used interchangeably with the term "hole trapping dopant."

[0038] In one or more embodiments, the first electrode may be an anode, the second electrode may be a cathode, and the interlayer may further include a hole transport region disposed between the first electrode and the emitter layer and including a hole injection layer, a hole transport layer, an emitter auxiliary layer, an electron blocking layer, or a combination thereof.

[0039] In one or more embodiments, the first electrode may be an anode, the second electrode may be a cathode, and the interlayer may further include an electron transport region disposed between the emitter layer and the second electrode and including a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.

[0040] In one or more embodiments, the first emission layer of the emission layer may be in contact with the second emission layer. In one or more embodiments, the first emission layer of the emission layer may be in direct contact with the second emission layer.

[0041] In one or more embodiments, the first emitting layer may be arranged in the direction of the first electrode, and the second emitting layer may be arranged in the direction of the second electrode. It should be understood that when the first emitting layer is arranged in the direction of the first electrode and the second emitting layer is arranged in the direction of the second electrode, the first emitting layer is arranged on the side of the interlayer facing the first electrode, and the second emitting layer is arranged on the side of the interlayer facing the second electrode.

[0042] For example, the first emitting layer may be arranged in the anode direction, and the second emitting layer may be arranged in the cathode direction.

[0043] In one or more embodiments, the first dopant and the third dopant may each independently include a fluorescent dopant. For example, the first dopant, the third dopant, or both the first dopant and the third dopant may each independently include a thermally activated delayed fluorescent dopant.

[0044] In one or more embodiments, at least one of the first dopant and the third dopant may be a boron-containing organic compound.

[0045] In one or more embodiments, the first dopant and the third dopant may be the same compound. For example, the first dopant and the third dopant may be the same fluorescent dopant. For example, the first dopant and the third dopant may be the same thermally activated delayed fluorescent dopant.

[0046] In one or more embodiments, the first dopant and the third dopant may be the same compound, and the first dopant may be doped, for example, uniformly doped on the first and second emission layers. For example, the first dopant and the third dopant may be the same thermally activated delayed fluorescence dopant compound, and the thermally activated delayed fluorescence dopant may be doped, for example, uniformly doped on the entire emission layer consisting of the first and second emission layers.

[0047] In one or more embodiments, the first and third dopants may emit fluorescence, and the electron trapping dopant and hole trapping dopant may substantially not emit light.

[0048] In the light-emitting device, intersystem crossing (ISC) occurs actively in the electron-trapping dopant without emitting light, thereby allowing singlet excitons generated in the host to transfer to the first dopant.

[0049] In the light-emitting device, ISC occurs actively in the hole-trapping dopant without emitting light, thereby allowing singlet excitons generated in the host to transfer to the third dopant.

[0050] In one or more embodiments, a first emission layer including an electron-trapping dopant may be located in the direction of the anode, and a second emission layer including a hole-trapping dopant may be located in the direction of the cathode, thereby improving the efficiency and lifetime of the light-emitting device by maximizing the light-emitting area.

[0051] In one or more embodiments, the electron trapping dopant may include: a dopant comprising a cyanide (CN) moiety; a dopant comprising a triazole moiety; a dopant comprising an oxadiazole moiety; a dopant comprising an aromatic imidazole moiety; a dopant comprising a naphthalimide moiety; a dopant comprising a perylene moiety; a dopant comprising a triazine moiety; a dopant comprising a pyridine moiety; or a dopant comprising a carbazole moiety.

[0052] As used herein, dopants including aromatic imidazole moieties refer to groups represented by the following structures (where optional substituents are omitted for convenience):

[0053]

[0054] As used herein, dopants including the naphthalimide moiety refer to groups represented by the following structures (where optional substituents are omitted for convenience):

[0055]

[0056] In one or more embodiments, the electron trapping dopant can be represented by Equation 1:

[0057] Formula 1

[0058]

[0059] In Equation 1,

[0060] A can be unsubstituted or replaced by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C60 Heterocyclic groups,

[0061] B can be -F, -Cl, -Br, -I, or a cyano group.

[0062] a can be 0, 1, or 2.

[0063] b can be an integer selected from 0 to 5.

[0064] When a is 2 or greater, each A can be different from each other or the same as each other.

[0065] When b is 2 or greater, each B can be different from each other or the same as each other.

[0066] Z1 and Z2 can each be independently unsubstituted or substituted by at least one R. 10a Substituted carbazoyl group,

[0067] R1, R2, and R3 can each independently be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted, or substituted with at least one R. 10a Replacement C1-C 60 Alkyl, unsubstituted, or with at least one R 10a Replacement C2-C 60 alkenyl, unsubstituted or with at least one R 10a Replacement C2-C 60 Alkyne group, unsubstituted or with at least one R 10a Replacement C1-C 60 Alkyl, unsubstituted, or with at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q1)(Q2)(Q3), -N(Q1)(Q2), -B(Q1)(Q2), -C(=O)(Q1), -S(=O)2(Q1) or -P(=O)(Q1)(Q2),

[0068] Each R 10a It can be used independently as:

[0069] Deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro;

[0070] Each of the following C1-C that was not replaced or was replaced by: 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group or C1-C 60 Alkoxy groups: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 ) or combinations thereof;

[0071] Each of the following C3-Cs that were not replaced or were replaced: 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy or C6-C 60 Aryl thiols: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 ) or a combination thereof; or

[0072] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q)31 ) or -P(=O)(Q 31 (Q) 32 ),and

[0073] Q1 to Q3, Q 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each can be independently represented as: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 Alkoxy groups; or C3-C groups that are unsubstituted or substituted with the following: 60 Carbocyclic groups or C1-C 60 Heterocyclic groups: deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 Alkoxy, phenyl, biphenyl, or combinations thereof.

[0074] In one or more embodiments, a and b in Equation 1 are not both 0.

[0075] The electron trapping dopant may be one or more of the following compounds (2-1) to (2-4):

[0076]

[0077] In one or more embodiments, the hole trapping dopant may be an iridium-containing phosphorescent dopant or a platinum-containing phosphorescent dopant.

[0078] In one or more embodiments, the hole trapping dopant may be one or more of the following compounds (4-1) to (4-12):

[0079]

[0080] In one or more embodiments, the electron trapping dopant or hole trapping dopant may be doped, for example, uniformly doped on the first emitter layer or the second emitter layer, or doped with a concentration gradient.

[0081] For example, when the first emitter layer is located in the direction of the first electrode and the second emitter layer is located in the direction of the second electrode, the electron trapping (second) dopant can be doped in such a way that the concentration increases from the first emitter layer to the first electrode, and the hole trapping (fourth) dopant can be doped in such a way that the concentration increases from the second emitter layer to the first emitter layer.

[0082] For example, when the first emitter layer is located in the direction of the first electrode and the second emitter layer is located in the direction of the second electrode, the electron trapping (second) dopant can be doped in such a way that the concentration increases from the first emitter layer to the first electrode, and the hole trapping (fourth) dopant can be doped in such a way that the concentration increases from the second emitter layer to the second electrode.

[0083] For example, when the first emitter layer is located in the direction of the first electrode and the second emitter layer is located in the direction of the second electrode, the electron trapping (second) dopant can be doped in such a way that the concentration increases from the first emitter layer to the second emitter layer, and the hole trapping (fourth) dopant can be doped in such a way that the concentration increases from the second emitter layer to the first emitter layer.

[0084] For example, when the first emitter layer is located in the direction of the first electrode and the second emitter layer is located in the direction of the second electrode, the electron trapping (second) dopant can be doped in such a way that the concentration increases from the first emitter layer to the second emitter layer, and the hole trapping (fourth) dopant can be doped in such a way that the concentration increases from the second emitter layer to the second electrode.

[0085] Compared to light-emitting devices in which electron-capturing dopant or hole-capturing dopant is uniformly doped, light-emitting devices in which electron-capturing dopant or hole-capturing dopant is doped with a concentration gradient can have superior efficiency and long lifetime.

[0086] In one or more embodiments, the first body included in the first emission layer and the second body included in the second emission layer may be the same compound.

[0087] In one or more embodiments, when the first emitter layer includes a first host, the lowest unoccupied molecular orbital (LUMO) energy level of the electron-trapping dopant may be lower than the lowest unoccupied molecular orbital (LUMO) energy level of the first host, and the highest occupied molecular orbital (HOMO) energy level of the electron-trapping dopant may be lower than the highest occupied molecular orbital (HOMO) energy level of the first host. That is, the electron-trapping (second) dopant is described as having electron-trapping properties in terms of energy.

[0088] In one or more embodiments, when the second emitter layer includes a second host, the LUMO level of the hole-trapping dopant may be higher than the LUMO level of the second host, and the HOMO level of the hole-trapping dopant may be higher than the HOMO level of the second host. That is, the hole-trapping dopant is described as having hole-trapping properties in terms of energy.

[0089] Another aspect of this disclosure provides one or more exemplary embodiments of an electronic device including a light-emitting device.

[0090] In one or more embodiments, the electronic device may further include a thin-film transistor (TFT).

[0091] The thin-film transistor may include a source electrode and a drain electrode, and

[0092] The first electrode of the light-emitting device can be electrically connected to at least one of the source electrode and the drain electrode of the thin-film transistor.

[0093] In one or more embodiments, the electronic device may further include a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or a combination thereof.

[0094] As used herein, the term "mezzanine" refers to a single layer and / or all of the multiple layers disposed between the first and second electrodes of a light-emitting device.

[0095] Figure 1 Description

[0096] Figure 1 This is a schematic cross-sectional view of a light-emitting device 10 according to one or more embodiments. The light-emitting device 10 includes a first electrode 110, a sandwich layer 130, and a second electrode 150.

[0097] The following text will refer to Figure 1 The structure of a light-emitting device 10 according to one or more embodiments and a method of manufacturing a light-emitting device 10 according to one or more embodiments are described.

[0098] First electrode 110

[0099] exist Figure 1 In this embodiment, the substrate may be additionally disposed below the first electrode 110 or above the second electrode 150. The substrate may be a glass substrate or a plastic substrate. The substrate may be a flexible substrate. In one or more embodiments, the substrate may include one or more thermoplastics with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or combinations thereof.

[0100] The first electrode 110 can be formed, for example, by depositing or sputtering a material for forming the first electrode 110 onto a substrate. When the first electrode 110 is an anode, a high work function material capable of injecting holes can be used as the material for forming the first electrode 110.

[0101] The first electrode 110 may be a reflective electrode, a semi-transparent electrode, or a transmissive electrode. In one or more embodiments, when the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or combinations thereof. In one or more embodiments, when the first electrode 110 is a semi-transparent electrode or a reflective electrode, the material used to form the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or combinations thereof.

[0102] The first electrode 110 may have a single-layer structure consisting of a single layer or a multi-layer structure including multiple layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0103] mezzanine 130

[0104] The interlayer 130 may be disposed on the first electrode 110. The interlayer 130 includes an emitter layer.

[0105] The interlayer 130 may further include a hole transport region disposed between the first electrode 110 and the emitter layer and an electron transport region disposed between the emitter layer and the second electrode 150.

[0106] In addition to various organic materials, the interlayer 130 may further include metal-containing compounds such as organometallic compounds and inorganic materials such as quantum dots.

[0107] The interlayer 130 may include i) two or more emitting layers stacked sequentially between the first electrode 110 and the second electrode 150, and ii) a charge generating layer disposed between the two emitting layers. When the interlayer 130 includes the emitting layers and charge generating layers as described above, the light-emitting device 10 may be a series light-emitting device.

[0108] Hole transport region in interlayer 130

[0109] The hole transport region may have: i) a single-layer structure consisting of a single layer made of a single material, ii) a single-layer structure consisting of a single layer made of multiple different materials, or iii) a multi-layer structure comprising multiple layers made of multiple different materials.

[0110] The hole transport region may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or a combination thereof.

[0111] For example, the hole transport region may have a multilayer structure including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, a hole transport layer / emission auxiliary layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, wherein in each structure, the layers are stacked sequentially on the first electrode 110 in the order described.

[0112] The hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, or a combination thereof:

[0113] Formula 201

[0114]

[0115] Formula 202

[0116]

[0117] In equations 201 and 202,

[0118] L 201 To L 204 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0119] L 205 It can be *-O-*', *-S-*', or *-N(Q) 201 )-*', unsubstituted or by at least one R 10a Replacement C1-C 20 Alkylene, unsubstituted, or with at least one R 10a Replacement C2-C 20 alkenyl, unsubstituted, or with at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0120] xa1 to xa4 can each be an integer selected from 0 to 5 independently.

[0121] xa5 can be an integer selected from 1 to 10.

[0122] R 201 To R 204 and Q 201 Each can be independently unsubstituted or by at least one R 10aReplacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0123] R 201 and R 202 Optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups, or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form an unsubstituted or substituted compound with at least one R group. 10a (e.g., carbazole group, etc.) substituted C8-C 60 Polycyclic groups (e.g., see compound HT16),

[0124] R 203 and R 204 Optionally via a single bond, unsubstituted, or by at least one R 10a Substituted C1-C5 alkylene groups, or unsubstituted or substituted with at least one R 10a The substituted C2-C5 alkenyl groups are linked together to form an unsubstituted or substituted compound with at least one R group. 10a Replacement C8-C 60 Polycyclic groups, and

[0125] na1 can be an integer selected from 1 to 4.

[0126] In one or more embodiments, formula 201 and formula 202 may each include at least one of the groups represented by formulas CY201 to CY217:

[0127]

[0128] In equations CY201 to CY217, R 10b and R 10c Each can be combined with R 10a The descriptions are the same, CY ring 201 To CY 204 Each can be independently C3-C 20 Carbocyclic groups or C1-C 20 Heterocyclic groups, and at least one hydrogen in formulas CY201 to CY217 may be unsubstituted or replaced by at least one R as described herein. 10a replace.

[0129] In one or more embodiments, the ring CY in formulas CY201 to CY217 201 To CY 204 Each can be independently phenyl, naphthyl, phenanthryl or anthracene.

[0130] In one or more embodiments, Formula 201 and Formula 202 may each include at least one of the groups represented by Formula CY201 to Formula CY203.

[0131] In one or more embodiments, Formula 201 may include at least one of the groups represented by Formulas CY201 to CY203 and at least one of the groups represented by Formulas CY204 to CY217.

[0132] In one or more embodiments, in formula 201, xa1 can be 1, R 201 It can be a group represented by one of the formulas CY201 to CY203, xa2 can be 0, and R 202 It can be a group represented by one of the formulas CY204 to CY207.

[0133] In one or more embodiments, each of Formulas 201 and 202 may not include (exclude) a group represented by any of Formulas CY201 to CY203.

[0134] In one or more embodiments, each of Formulas 201 and 202 may not include a group represented by any one of Formulas CY201 to CY203, and may include at least one of the groups represented by Formulas CY204 to CY217.

[0135] In one or more embodiments, each of Formulas 201 and 202 may not include a group represented by any of Formulas CY201 to CY217.

[0136] For example, the hole transport region may include one of compounds HT1 to HT44, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4”-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), polyaniline / poly(4-styrenesulfonate) (PANI / PSS), or combinations thereof:

[0137]

[0138]

[0139]

[0140]

[0141]

[0142] The thickness of the hole transport region can be approximately to approximately For example, about to approximately Within the range. When the hole transport region includes a hole injection layer, a hole transport layer, or a combination thereof, the thickness of the hole injection layer can be approximately... to approximately For example, about to approximately Within a certain range, and the thickness of the hole transport layer can be approximately... to approximately For example, about to approximately Within these ranges, satisfactory hole transport characteristics can be obtained without a significant increase in driving voltage when the hole transport region, hole injection layer, and hole transport layer are within these ranges.

[0143] The emission assist layer can increase luminous efficiency by compensating for the resonant distance of light according to the wavelength of light emitted by the emission layer, and the electron blocking layer can block the flow of electrons from the electron transport region. The emission assist layer and the electron blocking layer may comprise the materials described above.

[0144] p-dopants

[0145] In addition to the materials described herein, the hole transport region may further include a charge-generating material for improving conductivity. The charge-generating material may be uniformly or non-uniformly dispersed in the hole transport region (e.g., in the form of a single layer composed of the charge-generating material).

[0146] The charge-generating material can be, for example, a p-doped agent.

[0147] For example, the LUMO level (or work function) of a p-doped agent can be equal to or less than about -3.5 electron volts (eV).

[0148] In one or more embodiments, the p-doper may include quinone derivatives, cyano-containing compounds, compounds containing elements EL1 and EL2, or combinations thereof.

[0149] Examples of quinone derivatives include TCNQ and F4-TCNQ.

[0150] Examples of cyano-containing compounds include HAT-CN and compounds represented by formula 221:

[0151]

[0152] Equation 221

[0153]

[0154] In Equation 221,

[0155] R 221 To R 223 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups, and

[0156] R 221 To R 223 At least one of them can be independently replaced by C3-C respectively. 60 Carbocyclic groups or C1-C 60 Heterocyclic groups: cyano; -F; -Cl; -Br; -I; C1-C substituted with cyano, -F, -Cl, -Br, -I or combinations thereof 20 Alkyl groups; or combinations thereof.

[0157] In compounds containing elements EL1 and EL2, element EL1 may be a metal, a metalloid, or a combination thereof, and element EL2 may be a nonmetal, a metalloid, or a combination thereof.

[0158] Examples of metals include: alkali metals, such as lithium (Li), sodium (Na), potassium (K), rubidium (Rb), or cesium (Cs); alkaline earth metals, such as beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), or barium (Ba); transition metals, such as titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (… Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), or gold (Au); later transition metals, such as zinc (Zn), indium (In), or tin (Sn); and lanthanides, such as lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu).

[0159] Examples of metalloids are silicon (Si), antimony (Sb) and tellurium (Te).

[0160] Examples of nonmetals are oxygen (O) and halogens (e.g., F, Cl, Br, or I).

[0161] Examples of compounds containing elements EL1 and EL2 are metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, or metal iodides), metal halide (e.g., metal fluorides, metal chlorides, metal bromides, or metal iodides), metal tellurides, or combinations thereof.

[0162] Examples of metal oxides are tungsten oxides, such as WO, W2O3, WO2, WO3 or W2O5; vanadium oxides, such as VO, V2O3, VO2 or V2O5; molybdenum oxides, such as MoO, Mo2O3, MoO2, MoO3 or Mo2O5; and rhenium oxides, such as ReO3.

[0163] Examples of metal halides include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, and lanthanide metal halides.

[0164] Examples of alkali metal halides include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, and CsI.

[0165] Examples of alkaline earth metal halides are BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, and BaI2.

[0166] Examples of transition metal halides include titanium halides (e.g., TiF4, TiCl4, TiBr4, or TiI4), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, or ZrI4), hafnium halides (e.g., HfF4, HfCl4, HfBr4, or HfI4), vanadium halides (e.g., VF3, VCl3, VBr3, or VI3), niobium halides (e.g., NbF3, NbCl3, NbBr3, or NbI3), and tantalum halides (e.g., TaF3, TaCl3, Ta...). Br3 or TaI3), chromium halides (e.g., CrF3, CrCl3, CrBr3 or CrI3), molybdenum halides (e.g., MoF3, MoCl3, MoBr3 or MoI3), tungsten halides (e.g., WF3, WCl3, WBr3 or WI3), manganese halides (e.g., MnF2, MnCl2, MnBr2 or MnI2), technetium halides (e.g., TcF2, TcCl2, TcBr2 or TcI2), rhenium halides (e.g., ReF2, ReCl2, ReBr... 2 or ReI2), iron halides (e.g., FeF2, FeCl2, FeBr2 or FeI2), ruthenium halides (e.g., RuF2, RuCl2, RuBr2 or RuI2), osmium halides (e.g., OsF2, OsCl2, OsBr2 or OsI2), cobalt halides (e.g., CoF2, CoCl2, CoBr2 or CoI2), rhodium halides (e.g., RhF2, RhCl2, RhBr2 or RhI2), iridium halides (e.g., IrF2, IrCl2, Ir Nickel halides (e.g., NiF2, NiCl2, NiBr2, or NiI2), palladium halides (e.g., PdF2, PdCl2, PdBr2, or PdI2), platinum halides (e.g., PtF2, PtCl2, PtBr2, or PtI2), copper halides (e.g., CuF, CuCl, CuBr, or CuI), silver halides (e.g., AgF, AgCl, AgBr, or AgI), and gold halides (e.g., AuF, AuCl, AuBr, or AuI).

[0167] Examples of post-transition metal halides are zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, or ZnI2), indium halides (e.g., InI3), and tin halides (e.g., SnI2).

[0168] Examples of lanthanide metal halides are YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3 and SmI3.

[0169] Examples of metal halide halides are antimony halides (e.g., SbCl5).

[0170] Examples of metal tellurides include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te, or Cs₂Te), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, or BaTe), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, Fe). Te, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe or Au2Te), post-transition metal tellurides (e.g., ZnTe) and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe or LuTe).

[0171] emission layer in interlayer 130

[0172] In one or more embodiments, when the light-emitting device 10 is a full-color light-emitting device, the emitting layer may be patterned into a red emitting layer, a green emitting layer, and / or a blue emitting layer according to the sub-pixels. In one or more embodiments, the emitting layer may have a stacked structure of two or more layers selected from red, green, and blue emitting layers, wherein the two or more layers are in contact with or separated from each other. In one or more embodiments, the emitting layer may include two or more materials selected from red, green, and blue emitting materials, wherein the two or more materials are combined or mixed with each other in a single layer to emit white light.

[0173] In one or more embodiments, the emission layer may include a first emission layer and a second emission layer.

[0174] In one or more embodiments, the emitting layer may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or a combination thereof.

[0175] Based on 100 parts by weight of the host, the amount of dopant in the emitter layer can range from about 0.01 parts by weight to about 15 parts by weight. For example, based on 100 parts by weight of the host, the dopant can be included in the emitter layer in an amount from about 0.01 parts by weight to about 10 parts by weight.

[0176] In one or more embodiments, the emission layer may include quantum dots, such as multiple quantum dots that are the same or different from each other.

[0177] In one or more embodiments, the emission layer may include a delayed fluorescence material. The delayed fluorescence material may act as a host or dopant in the emission layer.

[0178] The thickness of the emission layer can be approximately to approximately For example, about to approximately Within these ranges, when the thickness of the emitting layer is within these ranges, it can exhibit excellent light-emitting properties without a significant increase in driving voltage.

[0179] main body

[0180] In one or more embodiments, the body may include a compound represented by formula 301:

[0181] Formula 301

[0182] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21

[0183] In Equation 301,

[0184] Ar 301 and L 301 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0185] xb11 can be 1, 2, or 3.

[0186] xb1 can be an integer selected from 0 to 5.

[0187] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted, or with at least one R. 10a Replacement C1-C 60 Alkyl, unsubstituted, or with at least one R 10a Replacement C2-C 60 alkenyl, unsubstituted or with at least one R 10a Replacement C2-C 60 Alkyne group, unsubstituted or with at least one R 10a Replacement C1-C 60 Alkyl, unsubstituted, or with at least one R 10a Replacement C3-C 60Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 301 (Q) 302 (Q) 303 -N(Q) 301 (Q) 302 -B(Q) 301 (Q) 302 -C(=O)(Q) 301 -S(=O)2(Q) 301 ) or -P(=O)(Q 301 (Q) 302 ),

[0188] xb21 can be an integer selected from 1 to 5, and

[0189] Q 301 To Q 303 Each can be the same as described in Q1.

[0190] In one or more embodiments, when xb11 in formula 301 is 2 or greater, two or more Ar 301 They can be connected to each other via a single key.

[0191] In one or more embodiments, the body may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or a combination thereof:

[0192] Formula 301-1

[0193]

[0194] Formula 301-2

[0195]

[0196] Among them, in equations 301-1 and 301-2,

[0197] Ring A 301 To Ring A 304 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0198] X 301 Can be O, S, N-[(L 304 ) xb4 -R 304 ]、C(R 304 (R)305 ) or Si(R 304 (R) 305 ),

[0199] xb22 and xb23 can each be 0, 1, or 2 independently.

[0200] L 301 xb1 and R 301 Each can be the same as described above.

[0201] L 302 To L 304 Each can be independently combined with L 301 The descriptions are the same.

[0202] xb2 to xb4 can each be independently identical to the one described in combination with xb1, and

[0203] R 302 To R 305 and R 311 To R 314 Each can be combined with R 301 The descriptions are the same.

[0204] In one or more embodiments, the host may include an alkaline earth metal complex. In one or more embodiments, the host may be a Be complex (e.g., compound H55), a Mg complex, a Zn complex, or a combination thereof.

[0205] In one or more embodiments, the main body may include one or more of compounds H1 to H124, 9,10-bis(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthyl-2-yl)anthracene (MADN), 9,10-bis(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-bis(9-carbazolyl)benzene (mCP), 1,3,5-tris(carbazolyl-9-yl)benzene (TCP), TCTA, or combinations thereof:

[0206]

[0207]

[0208]

[0209]

[0210]

[0211]

[0212]

[0213] Phosphorescent dopants

[0214] Hole trapping dopants may include phosphorescent dopants.

[0215] Phosphorescent dopants may include at least one transition metal as the center metal.

[0216] Phosphorescent dopants may include monodentate ligands, dipentate ligands, tridentate ligands, tetradentate ligands, pentadentate ligands, hexadentate ligands, or combinations thereof.

[0217] Phosphorescent dopants can be electrically neutral.

[0218] In one or more embodiments, the phosphorescent dopant may comprise an organometallic compound represented by formula 401:

[0219] Formula 401

[0220] M(L 401 ) xc1 (L 402 ) xc2

[0221] In Equation 401,

[0222] M can be a transition metal, such as iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm).

[0223] L 401 The ligand can be represented by Equation 402, and xc1 can be 1, 2, or 3, wherein when xc1 is 2 or greater, two or more L... 401 They can be the same or different from each other.

[0224] L 402 It can be an organic ligand, and xc2 can be 0, 1, 2, 3, or 4. When xc2 is 2 or greater, two or more L... 402 They can be the same or different from each other.

[0225] Formula 402

[0226]

[0227] In Equation 402, X 401 and X 402 They can be nitrogen or carbon independently.

[0228] Ring A 401 And Ring A 402 Each can be independently C3-C 60 Carbocyclic groups or C1-C60 Heterocyclic groups,

[0229] T 401 It can be a single bond, -O-, -S-, -C(=O)-, -N(Q)-. 411 )-、-C(Q 411 (Q) 412 )-、-C(Q 411 )=C(Q 412 - or -C(Q) 411 =,

[0230] X 403 and X 404 Each can be an independent chemical bond (e.g., covalent or coordinate), O, S, N (Q) 413 ), B(Q) 413 ), P(Q 413 ), C(Q 413 (Q) 414 ) or Si(Q 413 (Q) 414 ),

[0231] Q 411 To Q 414 Each can be the same as described in Q1.

[0232] R 401 and R 402 Each can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted, or substituted with at least one R. 10a Replacement C1-C 20 Alkyl, unsubstituted, or with at least one R 10a Replacement C1-C 20 Alkyl, unsubstituted, or with at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 401 (Q) 402 (Q) 403 -N(Q) 401 (Q) 402 -B(Q) 401 (Q) 402 -C(=O)(Q) 401 -S(=O)2(Q) 401 ) or -P(=O)(Q 401 (Q) 402 ),

[0233] Q 401 To Q403 Each can be the same as described in Q1.

[0234] xc11 and xc12 can each be an integer selected from 0 to 10 independently, and

[0235] In Equation 402, * and *' each indicate the binding site with M in Equation 401.

[0236] In one or more embodiments, in formula 402, i)X 401 It can be nitrogen, and X 402 It can be carbon, or ii)X 401 and X 402 Each of them can be nitrogen.

[0237] In one or more embodiments, when xc1 in equation 401 is 2 or greater, two or more L 401 The two rings A in 401 Optional location via T 402 (They are linking groups) connected to each other, or two or more L 401 The two rings A in 402 Optional location via T 403 (They are linking groups) linked to each other (e.g., see compounds PD1 through PD4 and PD7). T 402 and T 403 Each can be combined with T 401 The descriptions are the same.

[0238] In Equation 401, L 402 It can be an organic ligand. For example, L... 402 It may be a halogen group, a diketone group (e.g., acetylacetonate group), a carboxylic acid group (e.g., pyridinecarboxylic acid group), -C (=O), an isonitrile group, -CN group, a phosphorus group (e.g., phosphine or phosphite group) or a combination thereof.

[0239] Phosphorescent dopants may include, for example, one of compounds PD1 to PD26, or a combination thereof:

[0240]

[0241] Fluorescent dopants

[0242] The electron trapping dopant can be the same as described above.

[0243] The first and / or third dopant may be fluorescent dopants.

[0244] Fluorescent dopants may include amine-containing compounds, styrene-containing compounds, or combinations thereof.

[0245] For example, fluorescent dopants may include compounds represented by formula 501:

[0246] Formula 501

[0247]

[0248] In Equation 501,

[0249] Ar 501 L 501 To L 503 R 501 and R 502 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0250] xd1 to xd3 can each be independently 0, 1, 2, or 3, and

[0251] xd4 can be 1, 2, 3, 4, 5 or 6.

[0252] In one or more embodiments, Ar in Formula 501 501 It can be a fused ring group (e.g., anthracene, 1,2-benzophenanthrene, or pyrene), wherein three or more monocyclic groups are fused together.

[0253] In one or more embodiments, xd4 in formula 501 may be 2.

[0254] For example, fluorescent dopants may include one of compounds FD1 to FD36, DPVBi, DPAVBi, or combinations thereof:

[0255]

[0256]

[0257]

[0258] Delayed fluorescence materials

[0259] The first dopant can be a thermally activated delayed fluorescence (TADF) material (dopant), the third dopant can be a thermally activated delayed fluorescence material, or both the first and third dopants can be thermally activated delayed fluorescence materials.

[0260] The delayed fluorescence material used in this article can be any compound capable of emitting delayed fluorescence based on the delayed fluorescence emission mechanism.

[0261] The delayed fluorescence material included in the emission layer can act as either a host or a dopant, depending on the type of other materials included in the emission layer.

[0262] In one or more embodiments, the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescent material can be equal to or greater than about 0 eV or equal to or less than about 0.5 eV. When the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescent material satisfies the above range, the upconversion from the triplet state to the singlet state of the delayed fluorescent material can occur effectively, thereby improving the luminous efficiency of the light-emitting device 10.

[0263] For example, delayed fluorescence materials may include i) at least one electron donor (e.g., π-electron-rich C3-C). 60 Cyclic groups, such as carbazole groups, and at least one electron acceptor (e.g., sulfoxide, cyano, or a nitrogen-containing C1-C group lacking π electrons). 60 Materials containing cyclic groups, or ii) including C8-C 60 Materials with polycyclic groups, wherein two or more cyclic groups share boron (B) and are fused together.

[0264] Delayed fluorescence materials may include at least one of compounds DF1 to DF10:

[0265]

[0266] quantum dots

[0267] The emission layer may include quantum dots, such as multiple quantum dots.

[0268] The term quantum dot as used in this article refers to a crystal of a semiconductor compound and may include any material capable of emitting light at various wavelengths depending on the crystal size.

[0269] The diameter of quantum dots can range, for example, from about 1 nanometer (nm) to about 10 nm.

[0270] Quantum dots can be synthesized through wet chemical processes, metal-organic chemical vapor deposition, molecular beam epitaxy, or similar processes.

[0271] Wet chemistry refers to a method of growing quantum dot crystals by mixing organic solvents and precursor materials. During crystal growth, the organic solvent acts as a dispersant that naturally coordinates on the surface of the quantum dot crystals and controls the crystal growth. Therefore, the growth of quantum dot particles can be controlled by using processes that are easier and cheaper to perform compared to vapor deposition processes, such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE).

[0272] Quantum dots may include group III-VI semiconductor compounds; group II-VI semiconductor compounds; group III-V semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; group IV elements or compounds, or combinations thereof.

[0273] Examples of group III-VI semiconductor compounds are: binary compounds, such as In2S3, GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3 or InTe; ternary compounds, such as AgInS, AgInS2, CuInS, CuInS2, InGaS3 or InGaSe3; or combinations thereof.

[0274] Examples of Group II-VI semiconductor compounds are: binary compounds, such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS; ternary compounds, such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, or MgZnS; quaternary compounds, such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe; or combinations thereof.

[0275] Examples of Group III-V semiconductor compounds include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, or InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, or InPSb; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; or combinations thereof. Group III-V semiconductor compounds may further include Group II elements. Examples of group III-V semiconductor compounds that further include group II elements are InZnP, InGaZnP, and InAlZnP.

[0276] Examples of group I-III-VI semiconductor compounds are ternary compounds, such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, or AgAlO2; or combinations thereof.

[0277] Examples of group IV-VI semiconductor compounds are: binary compounds, such as SnS, SnSe, SnTe, PbS, PbSe, or PbTe; ternary compounds, such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; quaternary compounds, such as SnPbSSe, SnPbSeTe, or SnPbSTe; or combinations thereof.

[0278] Examples of Group IV elements or compounds include: single elements, such as Si or Ge; binary compounds, such as SiC or SiGe; or combinations thereof.

[0279] Each element contained in a multi-element compound, such as a binary, ternary, or quaternary compound, may exist in the particles at a uniform or non-uniform concentration.

[0280] Simultaneously, quantum dots can have a single structure or a core-shell dual structure, with the single structure having a uniform concentration of each element contained in the respective quantum dot. In one or more embodiments, the material contained in the core may differ from the material contained in the shell.

[0281] The shell of a quantum dot can serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be a single layer or multiple layers. The interface between the core and shell can have a concentration gradient, where the concentration of elements present in the shell decreases towards the center.

[0282] Examples of the shells for quantum dots are metallic or nonmetallic oxides, semiconductor compounds, or combinations thereof. Examples of metallic or nonmetallic oxides include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4; or combinations thereof. Examples of semiconductor compounds as described herein include Group III-VI semiconductor compounds, Group II-VI semiconductor compounds, Group III-V semiconductor compounds, Group I-III-VI semiconductor compounds, Group IV-VI semiconductor compounds, or combinations thereof. For example, semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or combinations thereof.

[0283] The full width at half maximum (FWHM) of the emission wavelength spectrum of quantum dots can be equal to or less than about 45 nm, for example, equal to or less than about 40 nm, and for example, equal to or less than about 30 nm. When the FWHM of the emission wavelength spectrum of quantum dots is within these ranges, color purity or color reproduction can be improved. Furthermore, light emitted through such quantum dots is illuminated in all directions. Therefore, a wider viewing angle can be increased.

[0284] In addition, quantum dots can be spherical, conical, multi-armed or cubic nanoparticles; nanotubes; nanowires; nanofibers; or nanosheet particles.

[0285] By adjusting the size of the quantum dots among multiple quantum dots, the band gap can also be adjusted, thereby obtaining light of various wavelengths in the quantum dot emission layer. Therefore, by using quantum dots of different sizes, light-emitting devices that emit light of various wavelengths can be realized. Specifically, the size of the quantum dots can be selected to emit red, green, and / or blue light. Furthermore, the size of the quantum dots can be adjusted so that different colors of light can be combined to emit white light.

[0286] Electron transport region in interlayer 130

[0287] The electron transport region may have: i) a single-layer structure consisting of a single layer comprising a single material, ii) a single-layer structure consisting of a single layer comprising multiple different materials, or iii) a multi-layer structure comprising multiple layers comprising multiple different materials.

[0288] The electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.

[0289] For example, the electron transport region may have an electron transport layer / electron injection layer structure or a hole blocking layer / electron transport layer / electron injection layer structure, wherein, in each structure, the layers are stacked sequentially on the emitter layer in the order described.

[0290] The electron transport region (e.g., a hole-blocking layer or electron transport layer within the electron transport region) may include a metal-free compound comprising at least one nitrogen-containing C1-C element lacking π electrons. 60 Cyclic groups.

[0291] In one or more embodiments, the electron transport region may include a compound represented by Formula 601:

[0292] Formula 601

[0293] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21

[0294] In Equation 601,

[0295] Ar 601 and L 601 Each can be independently unsubstituted or by at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups,

[0296] xe11 can be 1, 2, or 3.

[0297] xe1 can be 0, 1, 2, 3, 4, or 5.

[0298] R 601 It can be unsubstituted or by at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q)602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ),

[0299] Q 601 To Q 603 Each can be the same as described in Q1.

[0300] xe21 can be 1, 2, 3, 4, or 5, and

[0301] Ar 601 L 601 and R 601 At least one of them can be independently unsubstituted or by at least one R. 10a Substituted π-electron-deficient nitrogen-containing C1-C 60 Cyclic groups.

[0302] In one or more embodiments, when xe11 in formula 601 is 2 or greater, two or more Ar 601 They can be connected to each other via a single key.

[0303] In one or more embodiments, Ar in Formula 601 601 It can be a substituted or unsubstituted anthracene group.

[0304] In one or more embodiments, the electron transport region may include a compound represented by formula 601-1:

[0305] Formula 601-1

[0306]

[0307] In Equation 601-1,

[0308] X 614 It can be N or C(R) 614 ), X 615 It can be N or C(R) 615 ), X 616 It can be N or C(R) 616 ), and X 614 To X 616 At least one of them can be N,

[0309] L 611 To L 613 Each can be combined with L 601 The descriptions are the same.

[0310] xe611 to xe613 can each be identical to the description in conjunction with xe1.

[0311] R 611 To R 613 Each can be combined with R 601 The descriptions are the same, and

[0312] R 614 To R 616 Each can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkyl, unsubstituted, or with at least one R 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups.

[0313] For example, xe1 and xe611 to xe613 in Equations 601 and 601-1 can each be 0, 1 or 2 independently.

[0314] The electron transport region may include one of compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, NTAZ, or combinations thereof:

[0315]

[0316]

[0317]

[0318] The thickness of the electron transport region can be approximately to approximately For example, about to approximately Within the range. When the electron transport region includes a hole blocking layer, an electron transport layer, or a combination thereof, the thickness of the hole blocking layer can be approximately... to approximately For example, about to approximately Within a certain range, and the thickness of the electron transport layer can be approximately... to approximately For example, about to approximately Within these ranges, satisfactory electron transport characteristics can be obtained without a significant increase in driving voltage when the thickness of the hole blocking layer and / or electron transport layer is within these ranges.

[0319] In addition to the materials mentioned above, the electron transport region (e.g., the electron transport layer in the electron transport region) may further include a metallic material.

[0320] Metal-containing materials may include alkali metal complexes, alkaline earth metal complexes, or combinations thereof. The metal ions in alkali metal complexes may be Li, Na, K, Rb, or Cs ions, and the metal ions in alkaline earth metal complexes may be Be, Mg, Ca, Sr, or Ba ions. The ligands coordinating with the metal ions of the alkali metal or alkaline earth metal complexes may be hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or combinations thereof.

[0321] In one or more embodiments, the metal-containing material may include a Li complex. The Li complex may include, for example, compounds ET-D1 (LiQ) or ET-D2:

[0322]

[0323] The electron transport region may include an electron injection layer that facilitates the injection of electrons from the second electrode 150. The electron injection layer may be in direct contact with the second electrode 150.

[0324] The electron injection layer may have: i) a single-layer structure consisting of a single layer made of a single material, ii) a single-layer structure consisting of a single layer made of multiple different materials, or iii) a multi-layer structure comprising multiple layers made of multiple different materials.

[0325] The electron injection layer may include alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or combinations thereof.

[0326] Alkali metals may include Li, Na, K, Rb, Cs, or combinations thereof. Alkali earth metals may include Mg, Ca, Sr, Ba, or combinations thereof. Rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or combinations thereof.

[0327] Alkali metal compounds, alkaline earth metal compounds, and rare earth metal compounds may include oxides and halides of alkali metals, alkaline earth metals, and rare earth metals (e.g., fluorides, chlorides, bromides, or iodides), tellurides, or combinations thereof.

[0328] The alkali metal-containing compound may comprise an alkali metal oxide, such as Li₂O, Cs₂O or K₂O, an alkali metal halide, such as LiF, NaF, CsF, KF, LiI, NaI, CsI or KI, or a combination thereof. The alkaline earth metal-containing compound may comprise an alkaline earth metal oxide, such as BaO, SrO, CaO, Ba x Sr 1-x O where x is a real number satisfying the condition 0<x<1, or Ba x Ca 1-x O where x is a real number satisfying the condition 0<x<1. The rare earth metal-containing compound may comprise YbF₃, ScF₃, Sc₂O₃, Y₂O₃, Ce₂O₃, GdF₃, TbF₃, YbI₃, ScI₃, TbI₃, or a combination thereof. For example, the rare earth metal-containing compound may comprise a lanthanide metal telluride. Examples of lanthanide metal tellurides are LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La₂Te₃, Ce₂Te₃, Pr₂Te₃, Nd₂Te₃, Pm₂Te₃, Sm₂Te₃, Eu₂Te₃, Gd₂Te₃, Tb₂Te₃, Dy₂Te₃, Ho₂Te₃, Er₂Te₃, Tm₂Te₃, Yb₂Te₃ and Lu₂Te₃.

[0329] The alkali metal complex, alkaline earth metal complex and rare earth metal complex may comprise i) one of metal ions selected from the group consisting of alkali metal ions, alkaline earth metal ions and rare earth metal ions, and ii) a ligand bound to the metal ion, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or a combination thereof.

[0330] The electron injection layer may be composed of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or a combination thereof, or may further comprise an organic material (for example, a compound represented by Formula 601).

[0331] In one or more embodiments, the electron injection layer may be composed of: i) an alkali metal-containing compound (for example, an alkali metal halide), or ii) a) an alkali metal-containing compound (for example, an alkali metal halide); and b) an alkali metal, an alkaline earth metal, a rare earth metal, or a combination thereof. For example, the electron injection layer may be a KI:Yb co-deposited layer or an RbI:Yb co-deposited layer.

[0332] When the electron injection layer further includes organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or combinations thereof may be uniformly or non-uniformly dispersed in the matrix including the organic materials.

[0333] The thickness of the electron injection layer can be approximately to approximately For example, about to approximately Within these ranges, satisfactory electron injection characteristics can be obtained without a significant increase in driving voltage when the thickness of the electron-injected layer is within these ranges.

[0334] Second electrode 150

[0335] The second electrode 150 is disposed on the interlayer 130 having this structure. The second electrode 150 may be a cathode serving as an electron injection electrode, and may be a metal, alloy, conductive compound or combination thereof, each having a low work function, as the material for forming the second electrode 150.

[0336] The second electrode 150 may include at least one of lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, and IZO. The second electrode 150 may be a transmission electrode, a semi-transmission electrode, or a reflection electrode.

[0337] The second electrode 150 may have a single-layer structure or a multi-layer structure including two or more layers.

[0338] Capping layer

[0339] The first capping layer may be disposed outside the first electrode 110 and / or the second capping layer may be disposed outside the second electrode 150. Specifically, the light-emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are stacked sequentially in the described order, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are stacked sequentially in the described order, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150, and the second capping layer are stacked sequentially in the described order.

[0340] The light generated in the emitting layer of the interlayer 130 of the light-emitting device 10 can be extracted outward through the first electrode 110, which serves as a semi-transparent electrode or a transmissive electrode, and the first capping layer. The light generated in the emitting layer of the interlayer 130 of the light-emitting device 10 can be extracted outward through the second electrode 150, which serves as a semi-transparent electrode or a transmissive electrode, and the second capping layer.

[0341] The first and second capping layers can increase the external luminous efficiency according to the principle of constructive interference. Therefore, the light extraction efficiency of the light-emitting device 10 is increased, thereby improving the luminous efficiency of the light-emitting device 10.

[0342] Each of the first capping layer and the second capping layer may include a material with a refractive index equal to or greater than 1.6 (at 589 nm).

[0343] The first capping layer and the second capping layer can each be an organic capping layer including organic materials, an inorganic capping layer including inorganic materials, or a composite capping layer including organic and inorganic materials.

[0344] At least one of the first and second capping layers may independently comprise a carbocyclic compound, a heterocyclic compound, an amino-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthyl phthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or a combination thereof. The carbocyclic compound, heterocyclic compound, and amino-containing compound may optionally be substituted with substituents containing O, N, S, Se, Si, F, Cl, Br, I, or a combination thereof. In one or more embodiments, at least one of the first and second capping layers may independently comprise an amino-containing compound.

[0345] In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently include a compound represented by formula 201, a compound represented by formula 202, or a combination thereof.

[0346] In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently comprise one of compounds HT28 to HT33, one of compounds CP1 to CP6, β-NPB, or a combination thereof:

[0347]

[0348] electronic devices

[0349] Light-emitting devices can be included in various electronic devices. For example, electronic devices that include light-emitting devices can be light-emitting devices or authentication devices, etc.

[0350] In addition to the light-emitting device, the electronic device (e.g., the light-emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or color conversion layer may be arranged in at least one direction of propagation of the light emitted from the light-emitting device. For example, the light emitted from the light-emitting device may be blue light. The light-emitting device may be the same as described above. In one or more embodiments, the color conversion layer may include quantum dots. The quantum dots may be, for example, quantum dots as described herein.

[0351] An electronic device may include a first substrate. The first substrate may include a plurality of sub-pixel regions, a color filter may include a plurality of color filter regions corresponding to the plurality of sub-pixel regions, and a color conversion layer may include a plurality of color conversion regions corresponding to the plurality of sub-pixel regions.

[0352] Pixel definition layers can be arranged between multiple sub-pixel regions to define each sub-pixel region.

[0353] The color filter may further include a color filter area and a light-shielding pattern disposed between adjacent color filter areas in the color filter area, and the color conversion layer may further include a color conversion area and a light-shielding pattern disposed between adjacent color conversion areas in the color conversion area.

[0354] The color filter region (or multiple color conversion regions) includes: a first region emitting a first-color light; a second region emitting a second-color light; and / or a third region emitting a third-color light, wherein the first-color light, the second-color light, and / or the third-color light may have different maximum emission wavelengths. In one or more embodiments, the first-color light may be red light, the second-color light may be green light, and the third-color light may be blue light. In one or more embodiments, the color filter region or color conversion region may include quantum dots. In one or more embodiments, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. The quantum dots are the same as those described in this specification. Each of the first, second, and third regions may further include a scatterer.

[0355] In one or more embodiments, the light-emitting device can emit first light, a first region can absorb the first light to emit a first first-color light, a second region can absorb the first light to emit a second first-color light, and a third region can absorb the first light to emit a third first-color light. In this respect, the first first-color light, the second first-color light, and the third first-color light can have different maximum emission wavelengths from each other. In one or more embodiments, the first light can be blue light, the first first-color light can be red light, the second first-color light can be green light, and the third first-color light can be blue light.

[0356] In addition to the light-emitting device 10 described above, the electronic device may further include a thin-film transistor. The thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein either the source electrode or the drain electrode may be electrically connected to either the first electrode or the second electrode of the light-emitting device 10.

[0357] Thin-film transistors may further include gate electrodes or gate insulating layers, etc.

[0358] The active layer may include crystalline silicon, amorphous silicon, organic semiconductors, or oxide semiconductors, etc.

[0359] The electronic device may further include a sealing portion for sealing the light-emitting device 10. The sealing portion may be disposed between the color filter and / or color conversion layer and the light-emitting device. The sealing portion allows light from the light-emitting device 10 to be extracted to the outside while preventing ambient air and moisture from penetrating into the light-emitting device 10. The sealing portion may be a sealing substrate comprising a transparent glass substrate or a plastic substrate. The sealing portion may be a thin-film encapsulation layer comprising at least one of an organic layer and an inorganic layer. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0360] In the sealed portion, in addition to color filters and / or color conversion layers, other functional layers may be further arranged depending on the purpose of the electronic device. Functional layers may include touchscreen layers and polarization layers, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, or an infrared touchscreen layer. The authentication device may be, for example, a biometric authentication device used to authenticate an individual by using biometric information from a biometric body (e.g., a fingertip or pupil).

[0361] In addition to the light-emitting device, the certification device may further include a bioassay information collector.

[0362] Electronic devices can be used in a variety of displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, video game consoles, medical instruments (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasound diagnostic devices, or endoscope displays), fish finders, various measuring instruments, meters (e.g., meters for vehicles, airplanes, and ships), and projectors, etc.

[0363] Figure 2 and Figure 3 Description

[0364] Figure 2 This is a cross-sectional view of a light-emitting device according to one or more exemplary embodiments of this disclosure.

[0365] Figure 2 The light-emitting device depicted includes a substrate 100, a thin-film transistor (TFT), a light-emitting device, and a package portion 300 that seals the light-emitting device.

[0366] The substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer 210 may be disposed on the substrate 100. The buffer layer 210 can prevent impurities from penetrating through the substrate 100 and can provide a flat surface on the substrate 100.

[0367] The TFT can be disposed on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0368] The active layer 220 may include inorganic semiconductors (such as silicon or polysilicon), organic semiconductors or oxide semiconductors, and may include source region, drain region and channel region.

[0369] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be disposed on the active layer 220, and the gate electrode 240 may be disposed on the gate insulating film 230.

[0370] The interlayer insulating film 250 may be disposed on the gate electrode 240. The interlayer insulating film 250 may be disposed between the gate electrode 240 and the source electrode 260 to insulate the gate electrode 240 from the source electrode 260, and disposed between the gate electrode 240 and the drain electrode 270 to insulate the gate electrode 240 from the drain electrode 270.

[0371] The source electrode 260 and the drain electrode 270 may be disposed on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source region and drain region of the active layer 220, and the source electrode 260 and the drain electrode 270 may be disposed to contact the exposed portions of the source region and drain region of the active layer 220.

[0372] The TFT can be electrically connected to a light-emitting device to drive the light-emitting device, and can be covered by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. The light-emitting device may be provided on the passivation layer 280. The light-emitting device includes a first electrode 110, a sandwich layer 130, and a second electrode 150.

[0373] The first electrode 110 may be disposed on the passivation layer 280. The passivation layer 280 does not completely cover the drain electrode 270 and exposes a portion of the drain electrode 270, and the first electrode 110 may be connected to the exposed portion of the drain electrode 270.

[0374] A pixel defining layer 290, including insulating material, may be disposed on the first electrode 110. The pixel defining layer 290 may expose a region of the first electrode 110, and an interlayer 130 may be formed in the exposed region of the first electrode 110. The pixel defining layer 290 may be an organic film containing polyimide or polyacrylic acid. Although not explicitly stated... Figure 2 As shown, at least some layers of the mezzanine 130 may extend beyond the top of the pixel-defined layer 290, and thus may be arranged as common layers.

[0375] The second electrode 150 may be disposed on the interlayer 130, and the capping layer 170 may be additionally formed on the second electrode 150. The capping layer 170 may be formed to cover the second electrode 150.

[0376] The encapsulation portion 300 may be disposed on the capping layer 170. The encapsulation portion 300 may be disposed on the light-emitting device and protect the light-emitting device from moisture or oxygen. The encapsulation portion 300 may include: an inorganic film, including silicon nitride (SiN). x ), silicon oxide (SiO) x Indium tin oxide, indium zinc oxide, or combinations thereof; organic membranes, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate or polyacrylic acid), epoxy resins (e.g., aliphatic glycidyl ether (AGE)), or combinations thereof; or combinations of inorganic and organic membranes.

[0377] Figure 3 This is a cross-sectional view of a light-emitting device according to one or more embodiments of the present disclosure.

[0378] Figure 3 Light-emitting devices and combinations Figure 2 The described light-emitting device is the same, except that the light-shielding pattern 500 and the functional area 400 are additionally arranged on the encapsulation portion 300. The functional area 400 may be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. In one or more embodiments, including... Figure 3 The light-emitting device in the light-emitting equipment can be a series light-emitting device.

[0379] Preparation method

[0380] The layers constituting the hole transport region, the emitter layer, and the electron transport region can be formed in a region using one or more suitable methods, including vacuum deposition, spin coating, casting, Langmuir-Brookett (LB) deposition, inkjet printing, laser printing, and laser-induced thermal imaging.

[0381] When the layers constituting the hole transport region, the emitter layer, and the electron transport region are formed by vacuum deposition, the deposition can be carried out at a deposition temperature of approximately 100°C to approximately 500°C, taking into account the materials to be included in the layers and the structure of the layers to be formed. -8 To about 10 -3 The vacuum degree and about to approximately The deposition was carried out at a certain rate.

[0382] When the layers constituting the hole transport region, the emitter layer, and the electron transport region are formed by spin coating, spin coating can be carried out at a coating speed of about 2,000 revolutions per minute (rpm) to about 5,000 rpm and at a heat treatment temperature of about 80°C to about 200°C, taking into account the materials to be included in the layers to be formed and the structure of the layers to be formed.

[0383] Definition of substituent

[0384] As used in this article, the term "C3-C" 60 "Carbocyclic group" refers to a cyclic group that includes only carbon as the cyclic atom and has 3 to 60 carbon atoms, and as used herein by the term "C1-C". 60 A "heterocyclic group" refers to a cyclic group having 1 to 60 carbon atoms and further including heteroatoms other than carbon as cyclic atoms. (C3-C) 60 Carbocyclic groups and C1-C 60 Heterocyclic groups can be monocyclic groups consisting of a single ring or polycyclic groups in which two or more rings are fused together. For example, C1-C 60 The number of cyclic atoms in a heterocyclic group can range from 3 to 61.

[0385] As used in this article, the term "cyclic group" includes C3-C 60 Carbocyclic groups and C1-C 60 Heterocyclic groups.

[0386] As used in this article, “π-electron-rich C3-C” 60 "Cyclic group" refers to a cyclic group having 3 to 60 carbon atoms and excluding *-N=*' as the cyclic moiety, and as used herein, "a nitrogen-containing C1-C group lacking π electrons". 60 "Cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms and including *-N=*' as the cyclic part.

[0387] For example,

[0388] C3-C 60 The carbocyclic group can be i) group T1, or ii) a fused-ring group in which two or more groups T1 are fused together, for example, cyclopentadienyl, adamantyl, norbornel, phenyl, pentaenyl, naphthyl, azuleyl, indaryl, acenaphthel, phenanthyl, anthraceneyl, fluoranyl, triphenylene, pyrene, 1,2-benzophenantyl, perylene, penfenyl, heptaenyl, tetraphenyl, framyl, hexaphenyl, pentaphenyl, rubidyl, keratyl, ovoleyl, indole, fluorenyl, spiro-difluorenyl, benzofluorenyl, indophenantyl, or indoanthraceneyl.

[0389] C1-C 60The heterocyclic group may be i) group T2, ii) a fused-ring group in which two or more groups T2 are fused together, or iii) a fused-ring group in which at least one group T2 and at least one group T1 are fused together, for example, pyrrole, thiophene, furanyl, indolyl, benzoindolyl, naphthoindolyl, isoindolyl, benzoisoindolyl, naphthoisoindolyl, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzothiophene, dibenzofuranyl, indocarbazole, indolecarbazole, benzofuranocarbazole, benzothiophenecarbazole, benzothiophenecarbazole, benzoindolecarbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthothiophene, benzofuranodibenzofuranyl, benzyl Furanodibenzothiophene, benzothiophene dibenzothiophene, pyrazolyl, imidazole, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, benzopyrazolyl, benzimidazolyl, benzooxazolyl, benzoisooxazolyl, benzothiazolyl, benzoisothiazolyl, pyridyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinoline alkyl, benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cenolinyl, phthalazinyl, naphthidyl, imidazopyridyl, imidazopyrimidyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazoyl, azafluorenyl, azadibenzothiopheneyl, or azadibenzofuranyl

[0390] C3-C rich in π electrons 60 The cyclic group may be i) group T1, ii) a fused-ring group in which two or more groups T1 are fused together, iii) group T3, iv) a fused-ring group in which two or more groups T3 are fused together, or v) a fused-ring group in which at least one group T3 and at least one group T1 are fused together, for example, C3-C 60 Carbocyclic groups, pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiol, benzothiophene, benzofuranyl, carbazole, dibenzothiol, dibenzothiophene, dibenzofuranyl, indole-carbazole, indole-carbazole, benzofuran-carbazole, benzothiophene-carbazole, benzothiophene-carbazole, benzoindole-carbazole, benzocarbazole, benzonaphthofuranyl, benzonaphthophene, benzonaphthothiol, benzofuran-dibenzofuranyl, benzofuran-dibenzothiophene, or benzothiophene-dibenzothiophene.

[0391] Nitrogen-containing C1-C lacking π electrons 60The cyclic group may be i) group T4, ii) a fused-ring group in which two or more groups T4 are fused together, iii) a fused-ring group in which at least one group T4 and at least one group T1 are fused together, iv) a fused-ring group in which at least one group T4 and at least one group T3 are fused together, or v) a fused-ring group in which at least one group T4, at least one group T1 and at least one group T3 are fused together, for example, pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzo[a]pyrazolyl Azolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisoxahiazolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, benzoquinolinyl, benzoisoquinolinyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinel, cinolinyl, phthalazinyl, naphthidyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiopheneyl, azadibenzothiopheneyl, or azadibenzofuranyl

[0392] Group T1 can be cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornyl (or, bicyclo[2.2.1]heptane), norbornyl, bicyclo[1.1.1]pentane, bicyclo[2.1.1]hexane, bicyclo[2.2.2]octane, or phenyl.

[0393] The group T2 can be furanyl, thiopheneyl, 1H-pyrrolyl, thiopheneyl, borocyclopentadienyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathiazolyl, azaboracyclopentadienyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, or tetraazinyl.

[0394] Group T3 can be furanyl, thiophene, 1H-pyrrole, thiophene, or borocyclopentadienyl, and

[0395] The group T4 can be 2H-pyrrole, 3H-pyrrole, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiazolyl, azirthiolyl, aziboranecyclopentadienyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, or tetraazinyl.

[0396] As used in this article, the terms "cyclic group, C3-C" 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, π-electron-rich C3-C60 Cyclic groups or nitrogen-containing C1-C groups lacking π electrons 60 "Cyclic group" refers to a group fused with a cyclic group, a monovalent group, or a polyvalent group (e.g., a divalent group, a trivalent group, or a tetravalent group) according to the structure of a formula described by the corresponding term. For example, "phenyl" can be benzo[a], phenyl, or phenylene, etc., and its structure according to a formula including "phenyl" is readily understood by those skilled in the art.

[0397] Unit price C3-C 60 Carbocyclic groups and monovalent C1-C 60 Examples of heterocyclic groups are C3-C. 10 cycloalkyl, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocyclic alkenyl, C6-C 60 Aryl, C1-C 60 Heteroaryl, monovalent non-aromatic fused polycyclic groups, and monovalent non-aromatic fused heterocyclic groups, and divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups are C3-C. 10 Cycloalkylene, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkenyl, C6-C 60 aryl, C1-C 60 Hypoaryl, divalent non-aromatic fused polycyclic groups and divalent non-aromatic fused heterocyclic groups.

[0398] As used in this article, the term "C1-C" 60 "Alkyl" refers to a monovalent group of a straight-chain or branched aliphatic hydrocarbon having 1 to 60 carbon atoms, and examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, and tert-decyl. The term "C1-C" as used herein is also relevant. 60 "alkylene" refers to a compound with C1-C2 atoms. 60 Divalent groups with the same structure as alkyl groups.

[0399] As used in this article, the term "C2-C" 60 "Alkenyl" refers to the group formed at C2-C. 60The alkyl group has at least one carbon-carbon double bond at its middle or end, and examples include vinyl, propenyl, and butenyl groups. As used herein, the term "C2-C" is used... 60 "Alkenyl" refers to a group that has a C2-C bond structure. 60 Divalent groups with the same structure as alkenyl groups.

[0400] As used in this article, the term "C2-C" 60 "Alkyne group" refers to the group at C2-C 60 The alkyl group has at least one monovalent hydrocarbon group with a carbon-carbon triple bond in the middle or at the end, and examples include ethynyl and propynyl groups. As used herein, the term "C2-C" is used... 60 "Immyneyl" refers to a group with a C2-C group. 60 Divalent groups with the same structure as alkynyl groups.

[0401] As used in this article, the term "C1-C" 60 "Alkoxy" refers to the compound formed by -OA 101 (where A) 101 For C1-C 60 Alkyl groups are monovalent groups, and examples of them include methoxy, ethoxy and isopropoxy.

[0402] As used in this article, the term "C3-C" 10 "Cycloalkyl" refers to a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and examples of such groups include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornelyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, and bicyclo[2.2.2]octyl. The term "C3-C" as used herein is also relevant. 10 "Cycloalkylene" refers to a compound with C3-C66 atoms. 10 Divalent groups with the same structure as cycloalkyl groups.

[0403] As used in this article, the term "C1-C" 10 "Heterocyclic alkyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms, comprising at least one heteroatom as a cyclic atom in addition to a carbon atom, and examples include 1,2,3,4-oxatriazolyl, tetrahydrofuranyl, and tetrahydrothiophenyl. As used herein, the term "C1-C..." 10 "Heterocyclic alkyl" refers to a compound with C1-C2 atoms. 10 Divalent groups with the same structure as heterocyclic alkyl groups.

[0404] As used in this article, the term "C3-C" 10 "Cycloalkenyl" refers to a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring and being non-aromatic, and non-limiting examples include cyclopentenyl, cyclohexenyl, and cycloheptenyl. As used herein, the term "C3-C" is also used.10 "Biopylidene alkenyl" refers to a group that has a similar structure to C3-C4. 10 A divalent group with the same structure as a cycloalkenyl group.

[0405] As used in this article, the term "C1-C" 10 "Heterocyclic alkenyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms and at least one heteroatom as a cyclic atom in addition to carbon atoms, and at least one double bond in its cyclic structure. C1-C 10 Examples of heterocyclic alkenyl groups include 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, and 2,3-dihydrothiophenyl. As used herein, the term "C1-C..." 10 "Heterocyclic alkenyl" refers to a group that has a similar structure to C1-C1. 10 Divalent groups with the same structure as heterocyclic alkenyl groups.

[0406] As used in this article, the term "C6-C" 60 "Aryl" refers to a monovalent group having a carbocyclic aromatic system with 6 to 60 carbon atoms, and as used herein in the term "C6-C". 60 "Arylene" refers to a divalent group that has a carbocyclic aromatic system, which has 6 to 60 carbon atoms. (C6-C) 60 Examples of aryl groups include phenyl, pentanenyl, naphthyl, azulel, indole, acenaphthel, phenanthyl, phenanthryl, anthracene, fluoranthyl, triphenylene, pyrene, 1,2-benzophenanthryl, perylene, pentanenyl, heptanenyl, tetraphenyl, framyl, hexaphenyl, pentaphenyl, rubiginyl, myristyl, and ovoleyl. When C6-C... 60 Aryl and C6-C 60 When each of the aryl groups comprises two or more rings, the two or more rings can fused together.

[0407] As used in this article, the term "C1-C" 60 "Heteroaryl" refers to a monovalent group having a heterocyclic aromatic system, which, in addition to a carbon atom, has at least one heteroatom as a cyclic atom and has 1 to 60 carbon atoms. As used herein, the term "C1-C" is also relevant. 60 "Hypo-heteroaryl" refers to a divalent group possessing a heterocyclic aromatic system. In addition to a carbon atom, a heterocyclic aromatic system has at least one heteroatom as a cyclic atom and contains 1 to 60 carbon atoms. C1-C 60 Examples of heteroaryl groups include pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cyclolinyl, phenanthrolinel, phthalazinyl, and naphthidyl. When C1-C 60 heteroaryl and C1-C 60When each heteroaryl group comprises two or more rings, the two or more rings can fused together.

[0408] As used herein, the term "monovalent nonaromatic fused polycyclic group" refers to a monovalent group having two or more rings fused together, with only carbon atoms as cyclic atoms, and lacking aromaticity throughout its molecular structure (e.g., having 8 to 60 carbon atoms). Examples of monovalent nonaromatic fused polycyclic groups are indenyl, fluorenyl, spiro-difluorenyl, benzo[a]fluorenyl, indo[a]phenanthryl, and indo[a]anthrayl. As used herein, the term "divalent nonaromatic fused polycyclic group" refers to a divalent group having the same structure as a monovalent nonaromatic fused polycyclic group.

[0409] As used herein, the term “monovalent nonaromatic fused heterocyclic group” refers to a monovalent group having two or more rings fused together, having at least one heteroatom that is not a carbon atom as a cyclic atom, and having no aromaticity throughout its molecular structure (e.g., having 1 to 60 carbon atoms). Examples of monovalent non-aromatic fused heterocyclic groups include pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzofuranyl, azacarbazole, azafluorenyl, azadibenzothiophene, azadibenzothiophene, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, isothiazolyl, oxadiazolyl, thiazolyl. Benzopyrazolyl, benzoimidazolyl, benzooxazolyl, benzothiazolyl, benzooxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolecarbazolyl, indolocarbazolyl, benzofuranocarbazolyl, benzothiophenocarbazolyl, benzothiophenocarbazolyl, benzoindolocarbazolyl, benzocarbazolyl, benzonaphthiophenyl, benzonaphthiophenyl, benzofuranodibenzofuranyl, benzofuranodibenzothiophenyl, and benzothiophenodibenzothiophenyl. As used herein, the term "divalent nonaromatic fused heteropolycyclic group" refers to a divalent group having the same structure as a monovalent nonaromatic fused heteropolycyclic group.

[0410] As used in this article, the term "C6-C" 60 "Aryloxy group" refers to -OA 102 (where A) 102 For C6-C 60 Aryl), and as used herein by the term "C6-C 60 "Arylthio" refers to -SA 103 (where A) 103 For C6-C 60 Aryl).

[0411] As the group "R" used in this article 10a "Can be:

[0412] Deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro;

[0413] Each of the following C1-C that was not replaced or was replaced by: 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group or C1-C 60 Alkoxy groups: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 ) or combinations thereof;

[0414] Each of the following C3-Cs that were not replaced or were replaced: 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy or C6-C 60 Aryl thiols: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21-S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 ) or a combination thereof; or

[0415] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31 -S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0416] In this disclosure, Q1 to Q3, Q 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each can be independently represented as: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 Alkoxy groups; or C3-C groups that are unsubstituted or substituted with the following: 60 Carbocyclic groups or C1-C 60 Heterocyclic groups: deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 Alkoxy, phenyl, biphenyl, or combinations thereof.

[0417] As used herein, the term "heteroatom" refers to any atom that is not a carbon atom. Examples of heteroatoms include O, S, N, P, Si, B, Ge, Se, or combinations thereof.

[0418] As used herein, “Ph” refers to phenyl, “Me” refers to methyl, “Et” refers to ethyl, and “tert-Bu” or “Bu” refers to ethyl. t "Refers to tert-butyl, and as used herein, the term "OMe" refers to methyl methacrylate (MMA).

[0419] As used in this article, the term "biphenyl" refers to a phenyl group that has been substituted with a phenyl group. In other words, "biphenyl" is a phenyl group with a C6-C2 bond. 60 Aryl groups are substituted phenyl groups.

[0420] As used herein, the term "terphenyl" refers to a "phenyl group substituted with a biphenyl group." In other words, "terphenyl" is a phenyl group with a C6-C substituted biphenyl group. 60 Aryl-substituted C6-C 60 Aryl groups are substituted phenyl groups.

[0421] Unless otherwise defined, as used herein, * and *' refer to the binding site of the adjacent atom in the corresponding formula.

[0422] The compounds and light-emitting devices according to one or more exemplary embodiments will be described in further detail below with reference to the embodiments.

[0423] Example

[0424] Manufacturing of light-emitting devices

[0425] Comparative Example 1

[0426] ITO The glass substrate (anode) is cut to a size of 50 mm x 50 mm x 0.7 mm, ultrasonicated with isopropyl alcohol and deionized water for 5 minutes each, and then cleaned by exposure to ultraviolet rays and ozone for 30 minutes. The ITO glass substrate is then fed into a vacuum deposition apparatus.

[0427] DNTPD was vacuum deposited on a substrate to form a thickness of [missing information]. The hole injection layer. NPB, a hole transport compound, is vacuum-deposited onto the hole injection layer to form a thickness of [missing information]. The hole transport layer.

[0428] TCTA (body), DF10 (first dopant), and compound 2-4 (electron trapping dopant) were deposited on the hole transport layer to form a thickness of [missing information]. The emitter layer (in which each of the first dopant and the electron trapping dopant is uniformly doped at 5 wt% based on a 100 wt% host).

[0429] TPM-TAZ and LiQ were deposited on the emitter layer at a weight ratio of 5:5 to form a thickness of [thickness value missing]. The electron transport layer.

[0430] Yb was vacuum deposited onto the electron transport layer to form The thickness was then increased, and AgMg was vacuum deposited on top to form a thickness of [missing information]. The cathode is used, and CP6 is deposited on the cathode to form a thickness of [thickness value missing]. The sealing layer completes the manufacturing of the comparative light-emitting device.

[0431] Comparative Example 2

[0432] The light-emitting device was manufactured in the same manner as in Comparative Example 1, except that compound 4-12 was used instead of compound 2-4 in the formation of the emitting layer.

[0433] Comparative Example 3

[0434] The light-emitting device was manufactured in the same manner as in Comparative Example 2, except that compound 4-12 was doped in the emitting layer to have a concentration gradient (wherein the doping concentration of compound 4-12 in the emitting layer was made to decrease from the anode to the cathode).

[0435] Example 1

[0436] The light-emitting device was fabricated in the same manner as in Comparative Example 1, except that TCTA (the main component), DF10 (the first dopant), and compound 2-4 (the electron trapping dopant) were deposited on the hole transport layer to form a layer with a thickness of [missing information]. The first emitter layer (in which the amount of each of the first dopant and the electron trapping dopant is 5 wt% based on a 100 wt% host, and)

[0437] TCTA (body), DF10 (third dopant), and compound 4-12 (hole trap dopant) were deposited on the first emitter layer to form a thickness of [missing information]. The second emitter layer (of which each of the 100wt% host, the third dopant, and the hole trapping (fourth) dopant is 5wt%).

[0438] Example 2

[0439] The light-emitting device is manufactured in the same manner as in Example 1, except that compounds 2-4 are doped to form a concentration gradient in the formation of the first emission layer and compounds 4-12 are doped to form a concentration gradient in the formation of the second emission layer (wherein the doping concentration of compounds 2-4 in the first emission layer is made to decrease from the anode to the cathode and the doping concentration of compounds 4-12 in the second emission layer is made to increase from the anode to the cathode).

[0440] Comparative Example 4

[0441] The comparison light-emitting device was manufactured in the same manner as in Example 1, except that DF10 was used as the first dopant, compound 2-4 was used as the electron trapping (second) dopant, DABNA-2 was used as the third dopant, and compound 2-4 was used as the hole trapping (fourth) dopant.

[0442] Comparative Example 5

[0443] The comparative light-emitting device was manufactured in the same manner as in Comparative Example 4, except that compound 4-12 was used as an electron-capturing (second) dopant and as a hole-capturing (fourth) dopant.

[0444] Comparative Example 6

[0445] The comparison light-emitting device was manufactured in the same manner as in Example 1, except that TCTA as the host and DF10 as the dopant were deposited on the first emission layer to form a thickness of The second emitter layer (based on a 100wt% host and a 5wt% dopant).

[0446] Comparative Example 7

[0447] The comparison light-emitting device was manufactured in the same manner as in Example 1, except that TCTA was used as the host, DF10 was used as the first dopant, and compound 4-12 was used as the electron trapping (second) dopant to form the first emission layer, and TCTA as the host and DF10 as the dopant were deposited on the first emission layer to form the second emission layer (wherein the amount of dopant is 5 wt% based on 100 wt% host).

[0448] To evaluate the characteristics of the light-emitting devices in Comparative Examples 1 to 7 and Examples 1 and 2, measurements were taken at 10 mA / cm². 2 Efficiency and lifetime at current densities of ).

[0449] The efficiency of the light-emitting device was measured using a measuring device C9920-2-12 (manufactured by Hamamatsu Photonics).

[0450] The structures of DNTP, NPB, and DABNA-2 are shown below:

[0451]

[0452] Table 1

[0453] Comparative Example 1 18.0 40 Comparative Example 2 19.8 55 Comparative Example 3 19.8 70 Example 1 19.5 80 Example 2 18.9 95 Comparative Example 4 18.2 45 Comparative Example 5 18.5 55 Comparative Example 6 17.5 48 Comparative Example 7 16.5 60

[0454] In Table 1, EQE refers to the external quantum efficiency, and is calculated at 1,000 candela per square meter (cd / m²). 2 Measured under (or nit) conditions. T 95 For lifespan and for, when the device is at 1,000 cd / m 2 During operation, the time (in hours, hr) it takes for the device's brightness to decrease to 95% of its initial value (100%).

[0455] Referring to Table 1, it is determined that the light-emitting devices of Examples 1 and 2 have superior efficiency and longer lifespan compared to Comparative Examples 1 and 4 to 7. The light-emitting devices of Comparative Examples 2 and 3 have slightly different efficiencies compared to the light-emitting devices of Examples 1 and 2, but exhibit relatively poor lifespans.

[0456] Considering both efficiency and lifespan, the light-emitting device of the embodiment is determined to be superior to the light-emitting device of the comparative example.

[0457] Energy measurement

[0458] Table 2 shows the HOMO and LUMO energy levels of TCTA, compounds 2-4 and 4-12, and DF10, with each value listed in electron volts (eV).

[0459] Table 2

[0460] TCTA -5.69 -2.40 Compounds 2-4 -5.70 -2.63 Compound 4-12 -5.09 -1.97 DF10 -5.17 -2.17

[0461] When the energy relationships of TCTA and compounds 2-4 and 4-12 are shown in Table 2, compound 2-4 does not emit light, but intersystem crossing (ISC) occurs actively, allowing the singlet exciton generated in TCTA to be successfully transferred to DF10.

[0462] Similarly, for the energy relationship above, compound 4-12 does not emit light, but ISC occurs actively, thereby enabling the singlet exciton generated in the host to transfer smoothly to DF10.

[0463] In other words, this corresponds well to the superior efficiency and long lifespan of the light-emitting device disclosed herein.

[0464] According to one or more embodiments, the light-emitting device exhibits improved efficiency and longer lifespan compared to devices in the prior art.

[0465] It should be understood that the exemplary embodiments described herein should be considered descriptive only and not for limiting purposes. The description of features or aspects in each exemplary embodiment should generally be considered applicable to other similar features or aspects in other exemplary embodiments. While one or more exemplary embodiments have been described in detail with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope defined by the appended claims.

Claims

1. A light-emitting device, comprising: First electrode; The second electrode facing the first electrode; as well as An interlayer comprising an emission layer is disposed between the first electrode and the second electrode, wherein The emission layer includes a first emission layer and a second emission layer. The first emitter layer includes a first dopant and a second dopant, wherein the second dopant is an electron trapping dopant. The second emitter layer includes a third dopant and a fourth dopant, wherein the fourth dopant is a hole trapping dopant. The first electrode is the anode, and the second electrode is the cathode. The first emission layer is arranged in the direction of the first electrode, and the second emission layer is arranged in the direction of the second electrode. The first emitter layer includes a first host, wherein the lowest unoccupied molecular orbital energy level of the electron-trapping dopant is lower than the lowest unoccupied molecular orbital energy level of the first host, and the highest occupied molecular orbital energy level of the electron-trapping dopant is lower than the highest occupied molecular orbital energy level of the first host. The second emitter layer includes a second host, wherein the lowest unoccupied molecular orbital energy level of the hole trapping dopant is higher than the lowest unoccupied molecular orbital energy level of the second host, and the highest occupied molecular orbital energy level of the hole trapping dopant is higher than the highest occupied molecular orbital energy level of the second host.

2. The light-emitting device as claimed in claim 1, wherein... The interlayer further includes a hole transport region disposed between the first electrode and the emitter layer and includes a hole injection layer, a hole transport layer, an emitter assistance layer, an electron blocking layer, or a combination thereof.

3. The light-emitting device as claimed in claim 1, wherein... The interlayer further includes an electron transport region disposed between the emitter layer and the second electrode and includes a hole blocking layer, an electron transport layer, an electron injection layer, or a combination thereof.

4. The light-emitting device as claimed in claim 1, wherein the first emitting layer is in contact with the second emitting layer.

5. The light-emitting device of claim 1, wherein the first dopant and the third dopant are each independently a fluorescent dopant.

6. The light-emitting device of claim 1, wherein the first dopant and the third dopant are the same compound.

7. The light-emitting device as claimed in claim 1, wherein... The first dopant and the third dopant are the same compound, and The first dopant is uniformly doped on the first emitter layer and the second emitter layer.

8. The light-emitting device as claimed in claim 1, wherein... The first dopant and the third dopant emit fluorescence, and The electron trapping dopant and the hole trapping dopant do not emit light.

9. The light-emitting device of claim 1, wherein the electron-trapping dopant comprises: Dopants including cyanide moieties; dopants including triazole moieties; dopants including oxadiazole moieties; Dopants including aromatic imidazole moieties; dopants including naphthalimide moieties; dopants including perylene moieties; dopants including triazine moieties; dopants including pyridine moieties; and dopants including carbazole moieties.

10. The light-emitting device of claim 1, wherein the electron-trapping dopant is represented by formula 1: Formula 1 in, In Equation 1, A is unsubstituted or is replaced by at least one R. 10a Replacement C3-C 60 The carbocyclic group is either unsubstituted or has at least one R group. 10a Replacement C1-C 60 Heterocyclic groups, B is -F, -Cl, -Br, -I, or a cyano group. a is 0, 1, or 2. b is an integer selected from 0 to 5. When a is 2 or greater, each A is either different from each other or the same as each other. When b is 2 or greater, each B is either different from each other or the same as each other. Z1 and Z2 are each independently unsubstituted or substituted by at least one R. 10a Substituted carbazoyl group, R1, R2, and R3 are each independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted, or substituted with at least one R. 10a Replacement C1-C 60 Alkyl, unsubstituted, or with at least one R 10a Replacement C2-C 60 alkenyl, unsubstituted or with at least one R 10a Replacement C2-C 60 Alkyne group, unsubstituted or with at least one R 10a Replacement C1-C 60 Alkyl, unsubstituted, or with at least one R 10a Replacement C3-C 60 Carbocyclic groups, unsubstituted or with at least one R 10a Replacement C1-C 60 Heterocyclic groups, -Si(Q1)(Q2)(Q3), -N(Q1)(Q2), -B(Q1)(Q2), -C(=O)(Q1), -S(=O)2(Q1) or -P(=O)(Q1)(Q2), Each R 10a Independently: Deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro; Each of the following C1-C that was not replaced or was replaced by: 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group or C1-C 60 Alkoxy groups: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 ) or combinations thereof; Each of the following C3-Cs that were not replaced or were replaced: 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 aryloxy or C6-C 60 Aryl thiols: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 Carbocyclic groups, C1-C 60 Heterocyclic groups, C6-C 60 Aryloxy group, C6-C 60 Arylthio, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 ) or combinations thereof; or -If(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O)2(Q 31 ) or -P(=O)(Q 31 )(Q 32 ), and also Q1 to Q3, Q 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each of the following can be represented independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 Alkoxy groups; or C3-C groups that are unsubstituted or substituted with the following: 60 Carbocyclic groups or C1-C 60 Heterocyclic groups: deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 Alkoxy, phenyl, biphenyl, or combinations thereof.

11. The light-emitting device of claim 1, wherein the hole-trapping dopant is an iridium-containing phosphorescent dopant or a platinum-containing phosphorescent dopant.

12. The light-emitting device of claim 1, wherein at least one of the first dopant and the third dopant is a boron-containing organic compound.

13. The light-emitting device of claim 1, wherein the electron trapping dopant is doped with a concentration gradient, the hole trapping dopant is doped with a concentration gradient, or both the electron trapping dopant and the hole trapping dopant are doped with a concentration gradient.

14. The light-emitting device of claim 1, wherein the first emitting layer comprises a first body, the second emitting layer comprises a second body, and the first body and the second body are identical to each other.

15. An electronic device comprising the light-emitting device according to any one of claims 1 to 14.

16. The electronic device of claim 15, further comprising a thin-film transistor, The thin-film transistor includes a source electrode and a drain electrode, and The first electrode of the light-emitting device is electrically connected to at least one of the source electrode and the drain electrode of the thin-film transistor.

17. The electronic device of claim 15, further comprising a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or a combination thereof.

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