Systems, apparatuses, articles, and methods to interact with information stored in orbital states associated with silicon defects

Abstract

Various systems, devices, articles, and methods apply one or more light emitting defects disposed within a semiconductor body. A respective light emitting defect included in the one or more light emitting defects has a plurality of orbital states. An information processing device includes a semiconductor body and one or more light emitting defects. A system includes at least one processor and a quantum information processor including at least one light emitting defect. Methods of operation of devices and systems including one or more light emitting defects.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. Application No. 62 / 883597, filed August 6, 2019, entitled "SYSTEMS, DEVICES, ARTICLES, AND METHODS TO INTERACT WITH INFORMATION STORED IN ORBITAL STATES ASSOCIATED WITH SILICON DEFECTS," which is incorporated herein by reference for all purposes. For the purposes of the United States of America, this application claims the benefit of U.S. Application No. 62 / 883597, filed August 6, 2019, entitled "SYSTEMS, DEVICES, ARTICLES, AND METHODS TO INTERACT WITH INFORMATION STORED INORBITAL STATES ASSOCIATED WITH SILICON DEFECTS," pursuant to 35 U.S.SC § 119. Technical Field

[0003] This disclosure relates to quantum information processing operations for computational states, which include two or more local configuration states of light-emitting defects in semiconductor materials (e.g., orbital states of local deep-level defects in silicon). Background Technology

[0004] Information is contained in the state of a physical system. The physical system can be a quantum system or a classical system. The system includes tangible devices, such as electronic components defined on or within one or more substrates. The physical system may include one or more photons that can interact with or otherwise communicatively couple to other physical components. Summary of the Invention

[0005] One aspect of the present invention provides a quantum information processing device comprising a semiconductor body primarily composed of silicon and one or more light-emitting defects disposed within the semiconductor body. Each of the one or more light-emitting defects has a plurality of orbital states. The plurality of orbital states includes pairs of orbital states representing computational information. The device further includes a control system comprising circuitry communicatively coupled to the semiconductor body and initializing the one or more light-emitting defects in response to the execution of processor-executable instructions.

[0006] Another aspect of the present invention provides an information processing system including a quantum information processor comprising a semiconductor body primarily composed of silicon and a first light-emitting defect disposed within the semiconductor body. The first light-emitting defect includes a first plurality of spin-valley-orbital states, which include a first spin-valley-orbital state and a second spin-valley-orbital state. The system includes a control subsystem communicatively coupled to the quantum information processor, at least one processor communicatively coupled to the control subsystem, and at least one tangible computer-readable storage device communicatively coupled to the at least one processor and storing processor-executable instructions. When executed by the at least one processor, the processor-executable instructions cause the at least one processor to instruct the control subsystem to initialize the first light-emitting defect to a first computational state including the first spin-valley-orbital state.

[0007] Other aspects of the invention provide: an information processor substantially as described and illustrated herein; a system substantially as described and illustrated herein comprising at least one processor and a quantum information processor; a method of operating an information processor substantially as described and illustrated herein; a method of operating a system substantially as described and illustrated herein comprising a digital computer and an analog computer; a communication device substantially as described and illustrated herein; and / or a photon source substantially as described and illustrated herein.

[0008] Further aspects and exemplary embodiments are shown in the accompanying drawings and / or described in the following description.

[0009] It should be emphasized that the present invention relates to all combinations of the above features, even if these features are stated in different claims. Attached Figure Description

[0010] The accompanying drawings illustrate non-limiting exemplary embodiments of the present invention.

[0011] Figure 1 This is a schematic diagram showing a part of a system that includes a quantum information processor.

[0012] Figure 2 This is a schematic diagram illustrating an example defect and the semiconductor body.

[0013] Figure 3A It shows that it is aimed at and Figure 2 The diagram shows a schematic representation of multiple energy levels of the orbital state associated with an example defect.

[0014] Figure 3B It shows that it is aimed at and Figure 2 The example shown is a diagram of energy levels plotted against a magnetic field for the orbital states associated with the defect.

[0015] Figure 4 It shows based on Figure 3A and Figure 3B The table shows the calculated states of the energy levels.

[0016] Figure 5A and Figure 5B It shows based on Figure 3A and Figure 3B The diagram shows the calculated state of the energy levels.

[0017] Figure 6A and Figure 6B This is a schematic diagram illustrating the measurement operation via auxiliary photons.

[0018] Figure 7 This is a schematic diagram showing a semiconductor body, a pair of exemplary defects, and a coupler.

[0019] Figure 8 This is a schematic diagram illustrating the semiconductor body, several exemplary defects, and various optical structures.

[0020] Figure 9 This is a schematic diagram illustrating the semiconductor body and several exemplary defects with different computing states.

[0021] Figure 10 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor, including one or more initialization operations.

[0022] Figure 11 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes operations on one or more qubits.

[0023] Figure 12 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes one or more readout operations.

[0024] Figure 13 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes operations on one or more single qubits.

[0025] Figure 14 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes one or more multi-qubit operations.

[0026] Figure 15 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor, wherein the method includes transferring information from an orbital state to a spin state or from a spin state to an orbital state. Detailed Implementation

[0027] Throughout the following description, specific details are set forth to provide a more thorough understanding of the invention. However, the invention may be practiced without these details. In other instances, well-known elements have not been shown or described in detail to avoid unnecessarily obscuring the invention. Therefore, the specification and drawings are to be considered illustrative rather than restrictive.

[0028] This document discloses systems, apparatuses, articles, and methods with practical applications in information processing (e.g., computing, communication, quantum computing, and quantum communication). Information processing includes processing information, wherein the information is stored in the physical state of a physical (e.g., tangible) system. Communication includes transferring information from one physical system to another via one or more signals describing the physical state of the physical system. Quantum information processing includes processing information by using one or more quantum physical effects such as superposition, coherence, decoherence, entanglement, nonlocality, and teleportation. Some implementations of this system, apparatus, article, and method include or feature two or more aspects of a quantum computer: well-defined qubits, reliable state preparation, low decoherence rate, accurate quantum gate operations, multi-qubit operations, and quantum measurement. Systems, apparatuses, articles, and methods with practical applications in quantum communication and quantum computing can interconvert states between stationary qubits (e.g., solid-state) and flying qubits (e.g., photons).

[0029] Some implementations of this system, apparatus, article, and method include or are characterized in that information is stored or manipulated in relation to the energy difference associated with the spin-valley-orbit state of one or more defects (e.g., deep level defects, point defects, deep donors) in a semiconductor material (e.g., silicon) or a material that primarily comprises silicon.

[0030] Figure 1A processor-based system 100 is illustrated, comprising one or more dedicated devices for processing information. System 100 includes a digital computer 102, which includes a control subsystem 104. Control subsystem 104 includes at least one processor 105. Digital computer 102 includes at least one bus 106 coupled to control subsystem 104. System 100 also includes at least one non-transitory computer and processor-readable storage device 108 and a network interface subsystem 110, both communicatively coupled to bus 106. Digital computer 102 includes an operator input subsystem 112 and an output subsystem 114 communicatively coupled to bus 106. Digital computer 102 also includes an analog device interface (ADI) subsystem 116 coupled to bus 106. Bus 106 can communicatively couple two or more subsystems in computer 102. In some implementations, some subsystems of system 100 may be omitted or combined. Some subsystems of system 100 may be remotely accessed via network interface subsystem 110.

[0031] At least one processor 105 can be any logic processing unit, such as one or more digital processors, microprocessors, central processing units (CPUs), graphics processing units (GPUs), application-specific integrated circuits (ASICs), programmable gate arrays (PGAs), programmable logic units (PLUs), digital signal processors (DSPs), network processors (NPs), etc.

[0032] The network interface subsystem 110 includes communication circuitry that supports bidirectional communication of processor-readable data and processor-executable instructions. The network interface subsystem 110 can employ communication protocols (e.g., FTP, HTTPS, SSH, TCP / IP, SOAP plus XML) to communicate over a network or non-network communication channel (not shown) (e.g., the Internet, serial connection, parallel connection, etc.). Wireless connections, fiber optic connections, or combinations thereof, are used to exchange processor-readable data and processor-executable instructions.

[0033] The operator input subsystem 112 includes one or more user interface devices, such as a keyboard, pointer, numeric keypad, touchscreen, or other interface devices for a user or human operator. In some implementations, the operator input subsystem 112 includes one or more sensors for the digital computer 102 or analog device 150. These sensors provide information characterizing or representing the environment or internal state of the digital computer 102 and / or analog device 150. Furthermore, the output subsystem 114 includes one or more user interface devices, such as a display, lights, speakers, and a printer.

[0034] Storage device 108 includes at least one non-transitory or tangible storage device. For example, storage device 108 may include: one or more volatile storage devices, such as random access memory (RAM); and one or more non-volatile storage devices, such as read-only memory (ROM). Storage device 108 may include solid-state memory, flash memory, magnetic hard disk, optical disk, solid-state drive (SSD), hard disk drive (HDD), network drive, other forms of computer and processor-readable storage media, or combinations thereof. Those skilled in the art will understand that storage device 108 can be implemented in various ways, such as non-volatile storage, volatile storage, and / or combinations thereof. Furthermore, a computer system may combine volatile and non-volatile storage, such as cache, solid-state hard disk drives, in-memory databases, etc.

[0035] Storage device 108 includes or stores processor-executable instructions and / or processor-readable data 120 associated with the operation of system 100. Executing the processor-executable instructions 120, and optionally, reading the processor-readable data 120, causes at least one processor 105 and / or control subsystem 104 to perform or induce various methods and actions performed by system 100, digital computer 102, other systems or devices, or combinations thereof. For example, via network interface subsystem 110 or ADI subsystem 116. The processor-executable instructions and / or processor-readable data 120 may, for example, include a basic input / output system (BIOS) (not shown), operating system 122, peripheral drives (not shown), server instructions 124, application instructions 126, calibration instructions 128, dedicated information processor control instructions 130, environment instructions 132, and data 134. A portion of storage device 108 or the processor-executable instructions and / or processor-readable data 120 may be included in an article of manufacture including a non-transitory processor-readable storage device.

[0036] Exemplary operating system 122 includes, for example Operating system and Operating system. Server instructions 124 include processor-executable instructions and / or processor-readable data to interact with processor-based devices outside system 100 across a network via network interface subsystem 110. In some implementations, processor-executable server instructions 124 include processor-executable instructions and / or processor-readable data that, when executed by a processor, schedule jobs for digital computer 102 or analog device 150. Application instructions 126 include processor-executable instructions that, when executed, cause system 100 to perform actions associated with the application, such as performing computations on digital computer 102 or analog device 150.

[0037] Calibration instruction 128 includes processor-executable instructions that, when executed by a processor (e.g., processor 105), cause the processor to calibrate and store calibration values ​​for the simulation device 150. Components included in or on the simulation device 150 may have inter-component variations in operating parameters. These variations in operating parameters may change over time or differ from expected or ideal component parameters. Calibration instruction 128, when executed by the processor, enables the testing and correction of these inter-component variations, time variations, and / or variations from expected or ideal component parameters.

[0038] The dedicated information processor control instructions 130 include processor-executable instructions that, when executed by a processor (e.g., processor 105), cause the processor to control, initialize, write, manipulate, read, and / or otherwise send data to / from the analog device 150. The dedicated information processor control instructions 130 partially implement the methods described herein (e.g., see reference to...). Figures 10 to 15 And / or utilize the control subsystem included in the simulation device 150.

[0039] Environmental instructions 132 include processor-executable instructions and / or processor-readable data that, when executed by a processor (e.g., processor 105), cause the processor to control and monitor some or all of the prescribed and possible dedicated environmental aspects of the simulation device 150. Examples of environmental instructions 132 include instructions that, when executed, monitor and control temperature and / or magnetic fields affecting the dedicated information processor 154.

[0040] Environmental directive 132 can create a heat distribution (e.g., temperature values ​​of some or all of the simulation device 150 that have temporal or spatial correlation). Environmental directive 132 partially implements the methods described herein (including...). Figure 10 Neutralization and Figure 10 (Those related methods).

[0041] Data 134 may include processor-readable information or data used, obtained, created, or updated by the operation of system 100. For example, one or more logs from digital computer 102 and analog device 150. Data 134 may include processor-readable data having parameters for the operation of system 100. Data 134 may include processor-readable data associated with (e.g., created, referenced, or modified by) a processor executing processor-executable instructions (e.g., server instructions 124, application instructions 126, calibration instructions 128, dedicated information processor control instructions 130, and environment instructions 132). Data 134 may include processor-readable data corresponding to energy states (e.g., local degrees of freedom) associated with defects (e.g., luminescent defects, deep defects) and modified by local degrees of freedom (e.g., spin, valley splitting) or corresponding to transitions between such states (e.g., energy differences). Examples of such data are given herein at least... Figure 3A It is shown here.

[0042] Analog Device Interface (ADI) subsystem 116 includes communication circuitry supporting bidirectional communication between digital computer 102 and analog device 150. In some implementations, inputs or outputs from analog device 150 are digital, and intermediate states within the analog computer are analog. In some implementations, ADI subsystem 116 interacts with environmental subsystem 152 of analog device 150. In some implementations, ADI subsystem 116 interacts with dedicated information processor 154 via one or more subsystems of analog device 150 (e.g., subsystems 155, 156, and 158). In various implementations, the ADI subsystem 116 may include a waveform digitizer (e.g., an ALAZARTECH ATS9440, 4-channel, 14-bit, 125 MS / s card, or an ALAZARTECH ATS9360, 1-channel, 12-bit, 1.8 GS / s PCI card, from Alazar Technologies Inc., Pointe-Claire, Quebec, Canada), and an infrared photon detector (a SINGLE QUANTUM EOS Multi-channel SNSPD photon detector from Single Quantum, Delft, South Holland, Netherlands, or an ID230 NIR photon detector from ID Quantique SA, Carouge, Geneva, Switzerland). This document at least in Figure 2 Further detectors are described there.

[0043] The simulation device 150 includes an environmental subsystem 152 that provides a prescribed environment for a dedicated information processor 154 in response to the execution of an environmental command 132. Aspects of the prescribed environment may include one or more of, for example, humidity, air pressure, vibration, magnetic field, temperature, and electromagnetic field. In some implementations, the environmental subsystem 152 provides a low magnetic field around the dedicated information processor 154. In some implementations, the environmental subsystem 152 provides a time-invariant magnetic field around the information processor 154. In some implementations, the environmental subsystem 152 provides a time-varying or pulsed magnetic field. In some implementations, the environmental subsystem 152 maintains the information processor 154 at a low temperature through one or more cooling units and / or cold sources. For example, the information processor 154 may be maintained at close to 4K. Other useful temperatures for the information processor 154 include temperatures ranging from approximately 1 mK to approximately 77 K. In some implementations, the environmental subsystem 152 maintains the processor 154 in a range from approximately 1.5 K to approximately 4 K. In some implementations, the environmental subsystem 152 maintains the environment surrounding the information processor 154 at a temperature of approximately 290 K. In some implementations, the environmental subsystem 152 includes vibration isolation components, such as dampers in a cooling unit. In some implementations, the environmental subsystem 152 provides the dedicated information processor 154 with low humidity and constant atmospheric pressure (e.g., a stable vacuum).

[0044] The dedicated information processor 154 can be a quantum device. A quantum device is a fabrication or structure in which quantum mechanical effects are significant and / or dominant. Quantum devices (such as superconducting circuits and spintronic circuits) include circuits in which current transport is dominated by quantum mechanisms. Superconducting circuits utilize quantum physical phenomena such as tunneling and flux quantization. Spintronic circuits use the physical property of spin (such as electron spin) as a source for receiving, processing, storing, transmitting, or outputting information. Quantum devices can be used in measuring instruments, computing machines, etc. Examples of computing machines include components of classical computers and quantum computers.

[0045] Information processor 154 can be a quantum information processor comprising one or more qubits or qudits (collectively referred to as qubits). A qubit is a logical building block of a quantum computer, analogous to binary digits in a classical digital computer. A qubit is typically defined as a physical system having two or more discrete states called computational states. Computational states (examples of which are described herein) are analogous to binary states (i.e., 0 and 1) and can be labeled as |0> and |1>. In some implementations, these states are eigenstates of the sigma-Z operator (Pauli matrix operator) of the Hamiltonian of the physical system. Such qubits are said to be in a Z-diagonal basis and other bases can be used without loss of generality. A qubit may be in a superposition or linear combination of states, for example, α|0> + β|1>. The coefficients α and β may be complex numbers, and their moduli sum to 1. One or more logical operations can be performed on one or more qubits. These operations can occur at a specified time (e.g., at a designated time) or at a certain frequency within a specified time period. In some implementations, the information processor 154 includes one of a plurality of qudits. A qudit is a generalization of a qubit having three or more computational states, such as |0>, |1>, |2>, and may further specify the dimension of the qudit. In some implementations, the information processor 154 includes one of a plurality of qutrits. A qutrit is a triplet version of a qubit. Those skilled in the art will understand that qubit can be used as a metaphor, where the class "qubit" represents the genus "qudit".

[0046] In some implementations, the information processor 154 includes one or more components, devices, or subsystems to perform one or more types of single-qubit operations on one or more qubits. Examples of single-qubit operations include sigma-X or bit-flip operations, similar to classical NOT gates. The sigma-X operation affects the rotation of a quantum state modeled as a Bloch sphere around the X-axis. When the rotation is π radians, the state |0> maps to |1>, and vice versa, i.e., a full bit flip. Some examples of the information processor 154 perform sigma-Y operations on one or more qubits (without a classical binary counterpart). The sigma-Y operation affects the rotation of a Bloch sphere around the Y-axis. If the rotation is π radians, the operation maps the state |0> to i|1> and the state |1> to -i|0>. The sigma-Y operation is sometimes called the Pauli Y operation or gate. The information processor 154 may perform sigma-Z or phase operations on one or more qubits (without classical counterparts). The sigma-Z operation affects the rotation of the Bloch sphere around the Z-axis. If the rotation is in π radians, the operation maps |0> to |0> and |1> to -|1>. The sigma-Z operation is sometimes called the phase-flipping operation or gate. Examples of implementations of the sigma-X, sigma-Y, and sigma-Z operations are provided in this document at least in reference [reference needed]. Figure 13 It has been described.

[0047] In some implementations, the information processor 154 includes one or more couplers that can couple qubits. This is a two-qubit operation that may be selective. Two-qubit operations can be performed on the first qubit and the second qubit. An example two-qubit operation is a CNOT gate, where both qubits are taken as inputs, and the output state of the first qubit is the NOT of the input state of the first qubit, depending on the input state of the second qubit. A second example two-qubit operation is a CPHASE gate, where both qubits are taken as inputs, and if both input qubits are in state |11>, the output state is determined by a phase factor. The other three inputs (|00>, |01>, and |10>) remain unaffected. A third example of two-qubit operations is the Ising operation, or sigma-Z operation.

[0048] In the information processor 154, qubits can be communicatively coupled to each other through multiple structures and devices. In some implementations, multi-qubit interactions are mediated, for example, by a single coupler included in the information processor 154. In some implementations, multi-qubit interactions can be achieved through direct resonant coupling of the structures and devices involved, without the need for a coupler. For example, two qubits are driven at or near resonance to achieve direct resonant interaction. The information processor 154 can implement multi-qubit interactions by executing processor-executable instructions, and in response to said execution, cause two or more qubits to resonate or near resonance with each other, for example, two or more qubits are adjacent and interact at the same frequency. In some implementations, multi-qubit interactions are mediated by multiple couplers. The information processor 154 includes one or more optical structures as couplers. The information processor 154 may include one or more optical resonators and / or one or more waveguides as couplers. This document refers at least to Figure 14 Examples of implementations of multi-qubit operations are described. In some implementations, the information processor 154 includes one or more qubits without associated couplers.

[0049] The analog device 150 includes a control subsystem 155. The control subsystem may include an input system 156, an output system 158, or both. A dedicated information processor input subsystem 156, in response to processor-executable instructions, writes to or manipulates information stored in an information processor 154. The input subsystem 156 may be formed on the same substrate as the information processor 154, physically coupled to the information processor 154, communicatively coupled to the information processor 154, or a combination of the foregoing. In some implementations, the input subsystem 156 includes a digital-to-analog converter. The input subsystem 156 may include one or more of an optical input subsystem, an electric field subsystem, a magnetic manipulation subsystem, a mechanical subsystem, a cryogenic subsystem, associated or included components, etc. This document refers at least to... Figure 2 An example of a subsystem is described.

[0050] Input subsystem 156 can encode processor-readable information (including classical and quantum information) and transmit said information to information processor 154. Input subsystem 156 may include a light source to apply narrow-spectrum or broad-spectrum light (e.g., pulsed light) to a portion of the dedicated information processor 154. In some implementations, input subsystem 156 includes an electromagnet to provide a magnetic field to part or all of the information processor 154. In some implementations, input subsystem 156 includes one or more transmitters (e.g., wires, antennas, coils) to selectively provide one or more control pulses of duration and frequency to information processor 154. An example of a pulse generator is the PSPL10070A, available from Tektronix Inc., Beaverton, Oregon, USA. TM Generator. In some implementations, the transmitter is on the information processor 154. In some implementations, the transmitter is located close to and coupled to the information processor 154. Microwave, radio frequency (RF), and / or electromagnetic control pulses can be used. In some implementations, the input subsystem 156, together with the control subsystem 104, is used to perform electron paramagnetic resonance (EPR) and / or nuclear magnetic resonance (NMR) on the electrons and / or nuclear spins in the input subsystem 156. In some implementations, a bulk EPR or NMR cavity surrounds the information processor 154.

[0051] Figure 1 The analog device 150 shown includes a dedicated information processor output subsystem 158 that reads from at least an information processor 154. The output subsystem 158 may be formed on the same substrate as the information processor 154, physically coupled to the information processor 154, communicatively coupled to the information processor 154, or a combination of the foregoing. In some implementations, the output subsystem 158 includes one or more analog-to-digital converters, amplifiers, filters, etc. In some implementations, the output subsystem 158 includes one or more optical readout devices. The optical readout devices (e.g., photodetectors) detect photons generated by or within the information processor 154 or measure the state of optical structures included on or within the information processor 154.

[0052] Optical structures, such as resonators, support one or more photon modes. Examples of optical structures are described in this paper. In some implementations, an optical readout device distinguishes between the presence and absence of one or more photons in the optical resonator. In some examples, the optical readout device detects the frequency shift of one or more photon modes of the optical structure. An optical readout device can read out the state of one or more optical resonators. The state of the optical structure can depend on the occupancy of specific states of defects coupled to the optical structure, such as deep donors or luminescent defects. Specific states include spin-valley-orbit states. Examples of defects are described in this paper.

[0053] In some implementations, the output subsystem 158 includes one or more photodetectors, such as HgCdTe(MCT) variable bandgap detectors, for example, those from MZ, Poland. Mazowiecki's VIGO System SA's PVI-4TE-λopt TM Optical detectors, either the SINGLE QUANTUMEOS multi-channel SNSPD photon detector from Delft in the Netherlands or the ID230NIR photon detector from GE Carouge in Switzerland.

[0054] In some implementations, the output subsystem 158 includes one or more photodetectors, such as the APD110C or PDA20CS2 InGaAs avalanche photodetectors available from Thorlabs Canada ULC, Saint-Laurence, QC, Canada; superconducting on-chip photon detectors described in Akhlaghi et al., 2015 Nature Communications 6:8233; various detectors described in Eisaman et al., 2011 Rev. Sci Instrum. 82, 071101; or the ADN3010-11 detector from Analog Devices, Inc., Norwood, Massachusetts, USA.

[0055] In some implementations, the digital computer 102 uses an output subsystem 158 to perform logical operations on information in the information processor 154. For example, the output subsystem 158 can be used to perform measurements on quantum states stored in or on the information processor 154. In some implementations that include strong quantum measurement devices, for example, those described herein refer to at least... Figure 6A In the described examples, a measurement can replace one or more quantum operations. Universal quantum computing can be accomplished using only local gates and non-local (e.g., parity or multi-qubit) measurements.

[0056] Multi-qubit measurements involve observing the collective, group, or aggregate properties of multiple qubits (e.g., multiple qubits as defined in information processor 154). Processor 105 and / or control subsystem 104 can execute numerous methods in the information processing of multi-qubit measurement readouts that include the aggregate properties of multiple qubits. These methods include quantum error correction (e.g., surface coding), quantum phase estimation, multi-qubit operations, and entanglement generation. The aggregate properties of multiple qubits can include the parity of the qubits. Here, even parity includes balanced states, such as two computed states having an equal number of values, and odd parity includes unbalanced states, such as an odd number of values. Odd parity generally implies an error syndrome similar to the repetitive classical error detection codes based on redundant information.

[0057] For example, in a Z-basis with four qubits, the following states are even-parity: |0000>, |0011>, |0110>, etc. However, in an X-basis where |+>=(|0>+|1>) / √2 and |->=(|0>-|1>) / √2, even-parity states include |---->, |++-->, |-++-〉, etc. Other parity states can be defined for other bases and / or for other aggregation properties of multiple qubits. This paper at least refers to... Figure 10 and Figure 12 An example of parity measurement is described.

[0058] In some implementations, the output subsystem 158 performs a single read of the state of the components in the information processor 154. In some implementations, the output subsystem 158 performs the read of the state of the components in the information processor 154 at a speed of gigahertz.

[0059] In some implementations, the output subsystem 158 receives (e.g., receives, requests, and receives) quantum nondestructive measurement readouts about the state of components in the information processor 154. In some implementations, the output subsystem 158 performs readouts about the state of one or more auxiliary photons that have interacted with at least one component in the information processor 154. This document refers at least to Figure 6B An example of quantum nondestructive measurement is described. This article refers at least to Figure 6A and Figure 6B An example of measuring one or more auxiliary photons is described.

[0060] In some implementations, the analog device 150 is communicatively coupled to a communication channel 170. Channel 170 can be used to send information (e.g., quantum information, classical information) to and from the information processor 154. Channel 170 can communicatively couple the information processor 154 to one or more other information processors, such as a second instance of the information processor 154. Channel 170 can also communicatively couple the information processor 154 to another device, such as a photon generator.

[0061] In some implementations, parts of the digital computer 102 and the analog device 150 are omitted to create a smaller information processing device including an information processor 154 and a channel 170. In some implementations, parts of the digital computer 102 or the analog device 150 are communication devices.

[0062] Figure 2 This is a schematic diagram showing a portion of device 200. The shown portion of device 200 includes a substrate of semiconductor material, a body of semiconductor material or semiconductor body 202, and an exemplary defect 204 disposed (e.g., created, formed, implanted, located, placed, positioned) within semiconductor material 202. Device 200 can operate as an information processor such as a quantum information processor, an optical processor, an optical device, and a communication device.

[0063] In some implementations, semiconductor material 202 includes silicon. Semiconductor material 202 may include native silicon. Semiconductor material 202 may include other substances, such as silicon carbide or silicon germanium. In some implementations, semiconductor material 202 includes purified silicon, or so-called silicon vacuum. One way to improve the performance of a physical system (e.g., a longer coherence time for a system such as device 200) is to use a semiconductor material that has been treated to remove most of the nonparamagnetic isotopes (e.g., silicon 29) that broaden spectral measurements. Enriched or purified silicon has been treated to remove some to almost all non-zero spin isotopes, such as silicon 29. Purified silicon includes materials rich in silicon-28 at various levels (e.g., 99%, 99.9%, and 99.99%). Purified silicon includes materials rich in silicon 28. Purified silicon includes silicon with spectral linewidths at least ten to one hundred times sharper than native silicon.

[0064] Semiconductor bodies primarily composed of purified silicon can be manufactured or purchased. Production techniques involve using purified silicon compounds (e.g., by isotope, by magnetism) created through enrichment methods such as gas centrifugation (e.g., silicon tetrafluoride), magnetic mass separation, or ion exchange as input materials. The purified gaseous silicon compound may be part of the purification or production process. Such compounds include purified silicon tetrafluoride (SiF4) or purified silane (SiH4). Bodies, crystals, substrates, and wafers comprising purified silicon can be created using methods such as molecular beam epitaxy (MBE) and chemical vapor deposition (CVD). Available isotope-purified silicon involves removing silicon 29 to levels of tens, hundreds, thousands, or tens of thousands of parts per million. Suitable semiconductor materials 202 can be purchased from Isoflex USA, an isotope supply company located in San Francisco, California, USA.

[0065] In some implementations, semiconductor material 202 is an epitaxial layer of isotopically purified silicon grown on top of a natural silicon wafer. The thickness of semiconductor material 202 can be on the micrometer scale, while the thickness of the natural silicon wafer can reach the millimeter scale. In some implementations, semiconductor material 202 is a thin layer of silicon grown or deposited on a substrate including insulating materials such as silicon oxide, sapphire, silicon nitride, etc. Here, silicon can refer to natural silicon, purified silicon, or silicon alloys such as silicon-germanium mixtures, the components of which can be isotopically purified.

[0066] Defect 204 is disposed within the bulk of semiconductor material 202. The bulk of semiconductor material 202 is defined by multiple interfaces (e.g., faces, sides, or edges). In some implementations, defect 204 is disposed deep or far within the bulk or mass of semiconductor material 202. In at least one implementation, defect 204 is disposed at an interface shallow or close to one of the multiple interfaces (e.g., at a distance equal to or less than 10 nanometers). In some implementations, defect 204 is disposed at a distance greater than 10 nanometers from one of the multiple interfaces. In some implementations, defect 204 is evanescently coupled to an optical structure (e.g., a resonator, waveguide, lens). Figure 2(Not shown in the diagram). In some implementations, defect 204 is located at a distance greater than 10 nanometers from each of the plurality of interfaces. In some implementations, defect 204 is evanescently coupled to an optical structure (e.g., a resonator, waveguide, lens). In some implementations, defect 204 is located at a distance greater than 20 nanometers from each of the plurality of interfaces. In some implementations, defect 204 is located at a distance greater than 30 nanometers from each of the plurality of interfaces. In some implementations, defect 204 is located at a distance between 30 nanometers and 500 nanometers from the interfaces of the plurality of interfaces. In some implementations, defect 204 is located at a distance between 10 nanometers and 2 micrometers from the interface of semiconductor material 202. Defect 204 may be located at a distance between 30 nanometers and 1 micrometer from each interface. Additional defects 204 enter the body 202, and additional defects 204 are located away from the charges that may exist on the interfaces of the body of semiconductor material 202.

[0067] Defect 204 and several similar defects may be formed by one or more atoms or atomic vacancies (e.g., omitted silicon atoms), and these atoms locally occupy one or more reproducible specific relative positions relative to each other and to the lattice of the semiconductor material 202.

[0068] The crystal pattern of silicon atoms may allow for many different equivalent orientations of a type of defect relative to the lattice, defined by its chemical composition and configuration, but these different orientations are still attributed to the same defect type. The type of defect and the implantation method vary depending on the implementation. The constituent elements of a luminescent defect 204 can be controllably implanted into semiconductor material 202 using silicon industry-standard ion implantation techniques. One implantation process is described in U.S. Patent No. 3,434,894. In some implementations, defect 204 is a stable, non-gaseous chalcogenide atom. That is, a long-lived metallic and non-metallic solid, a Group 16 atom with an alternative double-donor electron configuration in silicon. Examples include sulfur, selenium, and tellurium. In some implementations, specific isotopes of Group 16 atoms are used. Examples include sulfur-33, selenium-77, tellurium-123, and tellurium-125. Suitable isotopes can be purchased from Isoflex USA.

[0069] In some implementations, defect 204 is a "deep-level defect," "deep-level impurity," or "deep-level donor," whose ionization energy is generally greater than the thermal energy k. B T, where k Bis the Boltzmann constant, and the temperature T is room temperature (~293 K). The energy of a shallow donor is equivalent to the thermal energy at room temperature. The terms "shallow" and "deep" are used in two senses: one to define the energy of one or more defects (e.g., donor atoms); and the other to define the spatial location of one or more donor atoms. These different meanings will be apparent to those skilled in the art in each individual context, especially depending on the context, such as "energy," "level," "spectrum," and "setting," "placement," "location," etc.

[0070] In some implementations, device 200 includes a defect 204 disposed within semiconductor material 202. Defect 204 can be a localized defect, a localized defect, or a point defect in the semiconductor material 202, such as a silicon lattice. Localization may refer to a defect whose atomic composition or configuration differs from that of a pure semiconductor within a distance of less than 5, 3, or 2 cell lengths, where the lattice constant of the undamaged lattice defines the cell length. For example, at least one interstitial silicon atom and / or at least one vacancy (without silicon atoms) can define a defect. A defect may cause deformation (e.g., strain) in adjacent cells beyond the defect size. The defect may support an electron or hole wave function that exceeds the size of the defect defined by its atomic composition or configuration.

[0071] Defect 204 or more defects can be localized defects or point defects. In some implementations, defect 204 is a substitution defect, where the lattice site in semiconductor material 202 contains atoms different from those found in adjacent lattice sites. Defect 204 may be a vacancy; an empty lattice site in the crystal that will be occupied. In some implementations, defect 204 is an interstitial defect where atoms occupy non-lattice sites. An example of an interstitial defect is an Al1 (aluminum 1) defect (836 meV, 6742.8 cm⁻¹). -1 (Near-infrared). Defect 204 is likely a Frenkel defect, in which an atom moves into an interstitial site and creates a vacancy. That is, a combination of interstitial and vacancy defects. Here, the atom includes at least one atom, ion, or molecule, but the defect remains localized.

[0072] Defect 204 or more defects can be damage centers, such as radiation damage centers. Defect 204 in semiconductor material 202 can be constructed using one of several methods. One class of methods involves applying radiation to semiconductor material 202. In some implementations, an electron beam is applied to semiconductor material 202 to create defect 204. Following the application of radiation, semiconductor material 202 can be annealed at a specified temperature. For example, treating silicon bulk with an electron beam and annealing at around 100°C creates a G-center. The temperature varies depending on the defect; for example, methods for creating T-centers might include annealing at 450°C. Defect 204 can be formed by implanting carbon into semiconductor material 202. In some implementations, defect 204 is constructed by implanting electrons, neutrons, protons, or silicon or other atoms into semiconductor material 202 that has been pre-contaminated with carbon.

[0073] Semiconductor material 202 may be a wafer comprising silicon. The wafer may be a silicon-on-insulator wafer, such as a 220 nm thick wafer covered with a silicon dioxide insulator. The silicon may be intrinsic silicon doped with substitutional donors or acceptors. The wafer is subjected to a carbon ion beam with a beam energy between 5 keV and 100 keV (e.g., 20 keV, 30 keV, 40 keV). The wafer may be processed with additional carbon ions at the same or different energies (e.g., lower energies).

[0074] Optionally, the semiconductor material 202 can be annealed to repair damage during ion implantation. For example, the semiconductor material 202 can be heated to high temperatures (e.g., approaching or exceeding 1000°C) on a timescale of seconds to minutes using a furnace, heater, lamp, or laser. The semiconductor material 202 is cooled at a slow rate to prevent the effects of thermal shock (e.g., breakage). Rapid thermal annealing (RTA) and rapid thermal processing (RTP) in semiconductor manufacturing are applicable. The semiconductor material 202 can be implanted with protons using a beam two orders of magnitude higher than that of carbon ions (e.g., 2 MeV).

[0075] In some implementations, defect 204 is a “luminescent defect,” which can also be labeled as a “luminescent impurity,” a “luminescent acceptor,” or a “luminescent donor” in the appropriate context. A luminescent defect comprises a pair of energy states, wherein the decay process from the first state of the first pair of energy states to the second state of the first pair of energy states has a sufficient characteristic probability (e.g., 0.1%) to generate at least one optical photon. The characteristic probability of emitting at least one optical photon is the likelihood of emitting an optical photon from defect 204 when defect 204 is located within the bulk of the strain-free semiconductor body 202.

[0076] When defect 204 is not in a block-like strain-free semiconductor environment, the probability of emitting optical photons from defect 204 may differ significantly from its characteristic optical photon emission probability through effects such as the Purcell effect, which can affect the local density of states. Optical photons are photons with wavelengths in the ultraviolet (UV), visible (VIS), or infrared (IR) bands (i.e., wavelengths between approximately 10 nm and 100 μm).

[0077] Defect 204 can have a pair of energy states, where the decay process from the first state of the first pair of energy states to the second state of the first pair of energy states has a sufficient probability of photon generation to generate an optical photon without a phonon (e.g., a quantized quasiparticle of vibrational energy). The transition energy of the optical photon is called the zero-phonon line (ZPL) transition energy.

[0078] Defect 204 can have a type defined by its chemical composition and configuration and / or by physical properties such as characteristic photon energies, for example, ZPL transition energies. The characteristic optical photon energies and typical photon generation probabilities of a defect can be modified by the constituent atomic isotopes of the luminescent defect and / or the environment, including but not limited to temperature, strain, pressure, electromagnetic fields, etc. It will be apparent to those skilled in the art that the characteristic transition energies and / or photon generation probabilities of a type of luminescent defect, altered by the environment and / or isotopic composition of the luminescent defect, do not constitute a different type of luminescent defect. Optical transitions may be affected by splitting as described herein.

[0079] In some implementations, device 200 includes one or more deep-level defects (e.g., deep donor atoms) with optical transitions. An exemplary deep-level defect is a non-gaseous stable chalcogenide atom. Defect 204 may have non-zero nuclear spin; for example, some chalcogenide nuclear isotopes have non-zero spin, such as 33S (spin 3 / 2), 77Se (spin 1 / 2), and 123Te and 125Te (both spin 1 / 2). These deep donors include ground states that have the same spin Hamiltonian as group V (Group 15) donors, but with larger hyperfine constants of approximately 312 MHz, 1.66 GHz, 2.90 GHz, and 3.50 GHz, respectively.

[0080] In some implementations, device 200 includes dual donors as defects 204. When ionized individually, the dual donors possess even larger binding energies (614 meV for S+, 593 meV for Se+, and 411 meV for Te+) and hydrogen (or He+) orbital structures with optical transitions in the mid-infrared (“mid-IR”). In 28Si:77Se+, the optical transitions between the base spin state and the lowest excited state are sufficiently narrow, exhibiting spin selectivity even under low, very low, or zero magnetic fields.

[0081] Examples of non-gaseous stable chalcogenide atoms include neutral atoms, ionized atoms, and doubly ionized atoms, such as S. 0 (~300meV), Se 0 (~300meV), Te 0 (~300meV), Se + (593meV), S + (614meV), Se + (593meV), Te + (411meV), S ++ Se ++ and Te ++ Just as a single-ionized charge state of a deep donor can couple to an optical structure, a neutral (e.g., uncharged) deep double-donor also allows for appropriately narrow optical transitions to excited states, and these transitions can similarly couple strongly to optical structures. Double-ionized atoms can be used as nuclear spin qubits, and neighboring optical structures can interact with the double-ionized charge state. In some implementations, only one specific charge state is used to define the qubit. In some implementations, one or more computational states of the qubit comprise multiple charge states.

[0082] Examples of deep-level defects include deep impurities. Examples of deep impurities include metallic clusters, such as four-atom clusters, like Cu. 4 The energy values ​​are: Cu3Ag (1014 meV), Cu3Ag (944 meV), Cu2Ag2 (867 meV), Cu3Pt (884 meV), Cu3Pt (882.36 meV), Cu2LiPt (850.1 meV), CuLi2Pt (827.6 meV), Li3Pt (814.9 meV), Ag4 (778 meV), Li3Au (765.3 meV), CuLi2Au (746.7 meV), Cu3Au (735 meV), and Cu2LiAu (735.2 meV). Here, the energies are transition energies, not binding energies. Examples of deep impurities include metal clusters, such as five-atom clusters, such as CuLi3(Au) (1090.2 meV), Cu4Au (1066 meV), Cu3LiAu (1052.7 meV), CuLi2Ag (909.9 meV), Cu4Pt (777 meV), Cu2Li2Pt (694.6 meV), Cu3LiPt (725.6 meV), and CuLi3Pt (671.6 meV).

[0083] Examples of deep defects include metal atoms or metal clusters selected from transition metals, such as clusters containing copper, silver, gold, or platinum. In some implementations, the transition metal is a metal from the d-block or groups 3 through 12 of the periodic table. In some implementations, the transition metal includes metals selected from the f-block or lanthanides and actinides.

[0084] Examples of deep-level defects include Group I and Group II (Group 1 and Group 2) atoms or clusters, such as Group 2 dual donors, for example, Mg. + (256.5meV), Mg 0 (107.5 meV) and beryllium or Group 1 donors, such as Li 0 and Li + Examples of defects include compounds and clusters that have those described above. Examples of defects include sulfur and copper, such as so-called S. A (968meV) and S B (812meV) center.

[0085] In some implementations, device 200 includes one or more defects with optical transitions. In some implementations, defect 204 has a wavelength close to 1570 nm (0.789 eV, 6364 cm⁻¹) in the so-called L-band (1565 nm to 1625 nm). -1 The L-band is one of five named telecommunications bands covering 1260nm to 1625nm, in which optical fibers exhibit low loss.

[0086] The types and genera of defects described herein have one or more equivalents known to those skilled in the art. These equivalents include equivalent or isoelectronic substitutions or replacements of one or more atoms included in the defect. Isoelectronic substitutions have the same number of valence electrons and include elements of the same period; for example, germanium may replace carbon in a defect, or lithium may replace hydrogen. Isoelectronic substitutions include charged atoms from adjacent periods. Isoelectronic substitutions affect the mechanical and electronic structure of the defect, and substitutions can be used to alter vibrational or optical interactions with the defect. As described herein, optical transitions may be affected by splitting.

[0087] In some implementations, device 200 includes acceptor sites within semiconductor material 202 to receive electrons. A suitable material for acceptor sites is boron. Acceptors may include acceptors from Group III (13), such as boron, aluminum, gallium, and indium. In some implementations, device 200 includes donor sites within silicon material to donate electrons. A suitable defect for donor sites is phosphorus. Donors may include donors from Group V (15), such as phosphorus, arsenic, bismuth, and antimony.

[0088] Device 200 may include optical structures (not shown). Optical structures may include resonators, optical resonators, waveguides, optical couplers, optical cavities, other arrangements of refractive and reflective materials. In some implementations, defect 204 is evanescently coupled to one or more optical structures.

[0089] Device 200 may include an optical input subsystem comprising one or more optical components, such as light source 206. The optical components are operable, for example, in response to the execution of processor-executable instructions, to selectively apply light to defect 204. The processor-executable instructions may be executed by light source 206 or by a processor. Light source 206 may apply light in a pulsed manner. The optical components may apply light to defect 204 at least at a first frequency. The first frequency corresponds to the energy difference between (e.g., near, at) a computational state pair (e.g., orbital state) of defect 204. Light source 206 may be communicatively coupled to processor 105 in system 100 and operate in response to processor 105 executing processor-executable instructions. The optical input component (e.g., light source 206) may be disposed in, on, near, or at a distance from semiconductor material 202. Figure 2 The relative positions and orientations of the components shown have been largely chosen for illustrative purposes; for example, the light from light source 206 does not need to be collinear with the magnetic field and perpendicular to the electric field, etc.

[0090] Device 200 may include one or more electric field subsystems, which include electrical components such as electrodes 208. The electric field subsystems may function, for example, in response to the execution of processor-executable instructions, to apply an electric field of at least a first strength to the semiconductor material 202 or the defect 204. The electric field may include a gradient. That is, the electric field subsystem changes the electric field incident on the semiconductor 202 in response to the execution of processor-executable instructions. The electric field subsystem affects changes in the energy eigenstates of the defect 204. The electric field subsystem may power components on or near the semiconductor material 202. The electric field subsystem may apply pulsed electrical operation to the defect 204.

[0091] Device 200 may include one or more magnetic manipulation subsystems, each including one or more magnetic input components, such as coil 210. The magnetic manipulation subsystems can influence changes in the energy eigenstates of defect 204. The magnetic input components selectively apply magnetic fields to semiconductor material 202 and / or defects 204 disposed within semiconductor material 202 in response to the execution of processor-executable instructions. The magnetic field may be oriented relative to the lattice orientation of semiconductor material 202 or multiple defects such as defect 204. The magnetic field may be static or variable relative to time or position within semiconductor material 202. In some implementations, the magnetic input components include large-aperture superconducting magnets. Processor 105 in system 100 may instruct coil 210 to apply a magnetic field to semiconductor material 202 in response to the execution of processor-executable instructions.

[0092] The magnetic manipulation subsystem included in device 200 may include at least one radio frequency input component, such as antenna 212, which selectively applies radio frequency pulses to semiconductor material 202 and / or defect 204 in response to the execution of processor-executable instructions. Processor 105 may instruct the magnetic manipulation subsystem (e.g., direct coil 210 and antenna 212) to flip the electron or nuclear spin associated with defect 204.

[0093] The processor 105 in system 100 can instruct the magnetic input components and radio frequency input components to perform magnetic resonance control, such as NMR and ESR, on defect 204 or multiple defects. For example, coil 210 can apply a field strength B0 to defect 204 and antenna 212 with radio frequency pulses, the frequency of which is proportional to the product of the intensity field B0 and the gyromagnetic ratio γ of the spin, and is adjusted for additional spin interactions in device 120.

[0094] Device 200 may include a mechanical subsystem comprising one or more mechanical input components. An example of a mechanical input component is an actuator 214. Actuator 214 may be paired with a support or bracket (not shown) disposed on an opposite side of semiconductor material 202. The mechanical input components may selectively alter (e.g., apply, remove) the strain on semiconductor material 202 in at least one direction in response to the execution of processor-executable instructions. Thus, the mechanical subsystem can influence changes in the energy eigenstates of defect 204 through strain in semiconductor material 202. The mechanical input device may apply strain locally within or across semiconductor material 202. The mechanical input components may be disposed within semiconductor material 202 or physically coupled to the exterior of semiconductor material 202. The mechanical subsystem may include one or more microelectromechanical system (MEMS) components that alter the strain in semiconductor material 202 in response to the execution of processor-executable instructions. The MEMS may be powered by an electric field subsystem. The mechanical subsystem may include one or more piezoelectric components.

[0095] Device 200 may include one or more cryogenic subsystems, such as cryogenic subsystem 216. Cryogenic subsystem 216 may, in response to the execution of processor-executable instructions, alter the thermal distribution of the semiconductor material 202 (e.g., temperature, temperature gradient, temperature and spatial or temporal variations) and influence changes in the energy eigenstates of the defect 204. Cryogenic subsystem 216 may include one or both of heater 217 and cooler 218. Cryogenic subsystem 216 may be operable, for example, selectively heating, cooling, or creating a thermal gradient in the semiconductor material 202 in response to the execution of processor-executable instructions.

[0096] In various implementations, examples of device 200 operate as an information processor, with one or more input subsystems or devices communicatively coupled to semiconductor material 202 or defect 204. One or more input subsystems or devices may be physically coupled to semiconductor material 202. For example, the input subsystems may cover, be disposed near, or be disposed within semiconductor material 202. Optical input components, electrical input components, magnetic input components, etc., may cover (including the underlie) a portion of semiconductor material 202, or may be structures defined within semiconductor material 202. One or more output subsystems or readout devices are communicatively and / or physically coupled to semiconductor material 202 or defect 204. For example, a photon detector may be positioned like a light source 206. This document at least relates to... Figure 1 , Figure 6A , Figure 6B and Figure 7 Further examples of readout devices and detectors are described.

[0097] Figure 3A This is illustrated as an example of defect 204, including a single-ionized chalcogenide deep donor (e.g., 77Se) in device 200. + This is a schematic diagram of multiple energy levels or energy eigenstates 300 associated with the state. Different defects will have different labels for energy eigenstates 300. For example, lithium has different orders for energy eigenstates 300. Other defects have different energy eigenstates 300, for example, sub-levels are labeled differently. Energy eigenstates 300 are drawn relative to energy axis 302 (not to scale). Multiple energy eigenstates 300 include energy eigenstates 304, 306, etc. Orbital energy eigenstate 304 is the hydrogen orbital state labeled 1s according to atomic orbital labeling conventions. Orbital levels can be labeled Xa. y Let X be the energy level corresponding to the principal quantum number n, and type a be the energy level corresponding to the angular quantum number n. The shape of the orbital or the lowercase letter of the subshell, and y is the number of electrons in that orbital. For example, orbital 1s 2 It has two electrons and is in the lowest energy level (n=1), and has The angular quantum number or spherical shape.

[0098] The valley structure of semiconductor material 202 splits the orbital energy eigenstate 304 into valley-orbit states 306, 308, and 310. That is, block indirect semiconductor materials such as silicon have a crystal structure (also called a valley structure) that splits the defective hydrogen states into six ways, i.e., six times orbital degeneracy. This degeneracy can be relieved by applying strain, applying an electric field, etc., to the semiconductor material. The valley structure splits the orbital energy eigenstate 304 into six energy eigenstates: valley-orbit energy eigenstate 306 (1s:A); valley-orbit energy eigenstates 308A, 308B, and 308C (1s:T2); and valley-orbit energy eigenstates 310A and 310B (1s:E). The labels A, T2, and E are attached to the orbital label 1s. There is no convention for sub-levels, for example, distinguishing between energy eigenstates 308B and 308C. The valley structure can split higher-order orbital states, such as 2s, 2p, 3s, etc. (not shown).

[0099] Electron spin splits the valley-orbit energy eigenstates 306, 308A, 308B, 308C, 310A, and 310B into (electron) spin-valley-orbit energy eigenstates 316A, 316B, 317A, 317B, 318A, 318B, 318C, 318D, 320A, 320B, 320C, and 320D. That is, electron spin splits the valley-orbit energy eigenstate 306 into the spin-valley-orbit energy eigenstates 316A and 316B. Electron spin splits the valley-orbit energy eigenstates 308A, 308B, and 308C into spin-valley-orbit energy eigenstates 317A and 317B with G7 sub-labels, and spin-valley-orbit energy eigenstates 318A, 318B, 318C, and 318D with G8 sub-labels. It will be understood that the G7 and G8 sub-labels are not conventional labels for all possible deep defect types or charge states, but are used here for illustrative purposes only. Electron spin splits the valley-orbit energy eigenstates 310A and 310B into spin-valley-orbit energy eigenstates 320A, 320B, 320C, and 320D. In other words, electron spin provides the fine structure of energy eigenstate 300.

[0100] When present, nuclear spin splits the spin-valley-orbit energy eigenstates 316A, 316B, 317A, 317B, 318A, 318B, 318C, 318D, 320A, 320B, 320C, and 320D into (nuclear)spin-valley-orbit energy eigenstates 325, 326, 327, 328, and 330. The value of the nuclear spin is chosen by the type of defect. When the nuclear spin is spin 1 / 2, the splitting is twice (as shown in the figure). When the nuclear spin is spin 0 (e.g., defect 204 is selenium 78 or sulfur 32), there is no splitting (not shown), while when the nuclear spin is spin 3 / 2 (e.g., sulfur 33), the splitting is four times (not shown). In other words, nuclear spin provides hyperfine structure in energy eigenstate 300.

[0101] The spin-valley-orbit energy eigenstates 316, 317, 318, and 320; and the spin-spin-valley-orbit energy eigenstates 325, 326, 327, 328, and 330 can be referred to as "orbital states," and the associated transitions are referred to as "orbital transitions."

[0102] Multiple energy eigenstates 300 can be modified by variations in applied electric fields, magnetic fields, light, strain, and temperature. Figure 3B Multiple energy eigenstates 300 were plotted for the magnetic field. Figure 3A and Figure 3B They can be arranged adjacent to each other, using energy eigenstates 325, 326, 327, 328, and 330 to align the pages and form a schematic diagram.

[0103] Figure 3B This is a graph 350 showing the energy levels plotted relative to the magnetic field strength. Graph 350 includes an energy axis 352 and a magnetic field axis 354. Multiple energy eigenstates (i.e., allowed steady states) of the defect are plotted against the magnetic field. As shown, the defect is a single-ionized chalcogenide deep donor (e.g., 77Se). + Furthermore, other donor or charge states may have different energy levels and may be labeled differently. Several eigenstates include eigenstates 325, 326A, 236B, 326C, 327, 328, 330A, 330B, 330C, and 330D. Similar diagrams exist illustrating how eigenstates 325, 326A, 236B, 326C, 327, 328, 330A, 330B, 330C, and 330D change with electric field, temperature, light, and strain on the semiconductor material.

[0104] Graph 350 includes multiple transitions between multiple eigenstates. Various transitions are shown, such as energy differences, but any two energies of the multiple eigenstates can support a transition that obeys selection rules, such as the transition moment integral should be non-zero. Transitions are shown spaced apart on axis 354 to reduce visual clutter, and transitions can be aligned on axis 352. Transitions 356A and 356B are between a pair of eigenstates in spin-valley-orbit eigenstate 325 and spin-valley-orbit eigenstate 327. Transition 358 is a transition between an eigenstate in spin-valley-orbit eigenstate 328 and spin-valley-orbit eigenstate 330A. Transition 360 is between spin-valley-orbit eigenstate 325 and spin-valley-orbit eigenstate 330D. Transition 362 occurs between the two eigenstates of spin-valley-orbit eigenstate 330—eigenstate 330B and eigenstate 330C.

[0105] Figure 4 Including showing based on Figure 3A and Figure 3BTable 400 shows the computational states of the energy eigenstates. The computational states of quantum computing and quantum information processing vary depending on the implementation. In some implementations, the first (|0>) computational state and the second (|1>) computational state are defined by (spin-)spin-valley-orbit states. In some implementations, multiple qubits are encoded by multiple (spin-)spin-valley-orbit states of a single defect. In some implementations, one or more “quanta” are encoded by multiple (spin-)spin-valley-orbit states. The portion of code 1 shown in the second column of Table 400 has a first computational state |0>, which includes valley-orbit energy eigenstate 306 (labeled 1s: A), and a second computational state |1>, which includes valley-orbit energy eigenstate 308A (labeled 1s: T2). The spin states of portion code 1 are not defined, and the energy differences between computational states are not uniquely defined.

[0106] In some implementations, the calculated state includes the spin state. For example, the spin state of the nuclear spin of defect 204. Example code snippets show |0>=|*,*,↓> oen And |1>=|*'*,T> oen Where “oen” represents the (valley-) orbital, electron, and nuclear index, and * is a wildcard. In some implementations, the calculated state includes the electron spin of the electron in defect 204. One example, part of the code is |0>=|*, *, ↓> oen and |1〉=|*,*,T> oen In some implementations, the calculated states include the electron spin and nuclear spin of defect 204, where the difference between the calculated states lies in whether one or both of the electron spin and nuclear spin are present. In some implementations, the up / down spin designation is conventionally used to correspond to two arbitrary spin eigenstates and is not necessarily limited by alignment with the background magnetic field. In some implementations, the nuclear spin is 3 / 2, 5 / 2, or higher, and up / down designation is used to represent two of the many available nuclear spin eigenstates. In some implementations, the defect's charge state has multiple electrons, and up / down designation is used to represent two of the many available electron spin eigenstates.

[0107] Describe in a magnetic field (e.g., The Hamiltonian of the spin interaction between the nuclear spin and the single unpaired electron spin of an isolated single-ionized defect (e.g., defect 204) in the presence of ) is:

[0108]

[0109] The first two terms are Zeeman terms for electron spin and nuclear spin, while the third term is for hyperfine interaction. Here, μ B It is the Bohr magneton, μ nIt is a nuclear magneton, and g e It is the electronic g factor, g n It is the nuclear g-factor. and It is the z-part of the all-spin operation (e.g., B is the magnetic field defined above; and A is a constant related to defects and the environment (e.g., semiconductor, field distribution), i.e., the hyperfine constant. There is no difference in the energy of nuclear spin states due to electron spin effects; the energy corresponds, for example, to the nuclear resonant frequency. Typically, the energy of a nuclear spin state varies depending on the nearby electron spin state and other environmental parameters. Differences in the energy of electron spin states also depend on nuclear spin, etc. This can be addressed by applying a magnetic pulse in the transverse direction. The spin oscillates at the nuclear resonant frequency. In this example of the sigma-X operation, the spin can be flipped, placed in a superposition of states, etc. This allows for the manipulation of magnetic subsystems (e.g., Figure 1 The input subsystem 156 shown is capable of performing magnetic resonant control, such as NMR and ESR, on one or more nuclear or electron spins of multiple defects. Magnetic resonant control can be used for qubit operations, including when the computational state of the qubit differs in valley and / or orbital degrees of freedom.

[0110] In some implementations, the calculated states include electron spin states and include the same electron spin for both calculated states, or the two calculated states differ in valley and / or orbital states. The portion of code 2 shown in the third column of Table 400 has a first calculated state |0>, which includes the valley-orbit energy eigenstate 1s:A and a down-spin electron state, as well as an unspecified nuclear state. In portion code 2, the first calculated state includes the spin-valley-orbit eigenstate 316A or 316B (…). Figure 3A For the purposes of part of code 2, energy level 316A is used to label and represent electron spin down. The second calculated state includes valley-orbital eigenstates 317A or 317B. Figure 3A For the purposes of part of code 2, energy level 317A is used to label and represent electron spin down. The second calculated state |1> includes the valley-orbit energy eigenstate 1s:T2(G7), the down-spin electron state, and the unspecified nuclear state. For Figure 3A and Figure 3B The defect and charge states shown indicate that energy levels 317A and 317B have reverse electron spin signatures (i.e., the energy of electron spin-down is higher than the energy of electron spin-up). For spin-1 / 2 nuclear spin, as... Figure 3B As shown, there are four possible energy differences between computation states 316A and 317A. Two of the four possible energy differences between the computation states in part of code 2 are marked as... Figure 3BThe transitions 356A and 356B are shown.

[0111] The calculated state can differ from the valley-orbit energy eigenstate, but is indistinguishable in spin state. Code 3, shown in the third column of Table 400, has a first calculated state |0>, which includes the valley-orbit energy eigenstate 1s:T2(G8), the electron state corresponding to spin-down (e.g., electron spin quantum number m = -1 / 2), and the spin-down nuclear state. The first calculated state of Code 3 includes the eigenstate in spin-valley-orbit eigenstate 328. The second calculated state includes eigenstate 330B. The second calculated state |1> includes the valley-orbit energy eigenstate 1s:E, the spin-down electron state, and the spin-down nuclear state. The energy difference between the calculated states of Code 3 is... Figure 3B The energy difference of transition 358 shown.

[0112] The calculated states can differ by one or more spin states, such as electron spin, nuclear spin, or electron and nuclear spin. Code 4, shown in column 5 of Table 400, has a first calculated state |0>, which includes the valley-orbit energy eigenstate 1s:A, a down-spin electron state, and an up-spin nuclear state. The first calculated state of Code 4 includes the spin-valley-orbit eigenstate 325. The second calculated state includes the spin-valley-orbit eigenstate 330D. The second calculated state |1> includes the valley-orbit energy eigenstate 1s:E, an up-spin electron state, and a down-spin nuclear state. The energy difference between the calculated states of Code 4 is... Figure 3B The energy difference for the 360-degree transition is shown in the figure.

[0113] The calculated states can differ by one or more spin states, such as electron spin, nuclear spin, or electron and nuclear spin, but the valley-orbit eigenstates are not different. The second calculated state can have a higher energy than the first calculated state. Code 5, shown in column 6 of Table 400, has a first calculated state |0>, which includes the valley-orbit energy eigenstate 1s:E, a down electron spin state, and a down nuclear spin state. The first calculated state of code 4 includes the spin-valley-orbit eigenstate 330B. The second calculated state includes the spin-valley-orbit eigenstate 330C. The second calculated state |1> includes the valley-orbit energy eigenstate 1s:E, an up electron spin state, and an up nuclear spin state. The energy difference between the calculated states of code 5 is... Figure 3B The energy difference of transition 362 is shown.

[0114] The Hamiltonian describing the spin-orbit interaction of electron spin or nuclear spin and the orbital-valley transition of isolated defects (e.g., a single-ionized defect as an example of defect 204) is of size b × 2 × n. s A complex square matrix, where n sDepends on the value of nuclear spin, for example, such as Figure 4 As shown, s = 1 / 2, then n s =2 (when s=0, then n) s =0, and s = 3 / 2, then n s =4). That is, to generate Figure 3A The interactions of the eigenstates shown on the right-hand side can be represented by a 24×24 Hamiltonian. Those skilled in the art can understand a more compact way to compute the Hamiltonian.

[0115] The Hamiltonian can be computed in the following form

[0116]

[0117] in, Pauli matrix; c x (t), c y (t), c z (t) is a time-dependent control signal; and ε(t) is also a time-dependent control signal, which in some implementations is greater than c. z (t) changes more slowly. The Hamiltonian can be controlled to manipulate the computational state of defect 204. For example, the Hamiltonian can be controlled to manipulate |1s:T2(G8),↓,↓> to |1s:E,↓,↓>, as shown in Table 400.

[0118] In some implementations, defect 204 is associated with a computational state that includes another degree of freedom (e.g., support, which has been defined for it). For example, the local degree of freedom at defect 204 may come from other particles, such as electrons, holes, or nuclear spin.

[0119] Figure 5A and Figure 5B It shows based on Figure 3A and Figure 3B The diagram shows the calculated state of the energy levels. Figure 5A This includes a first axis 502, which includes two spin states, up and down, such as electron spin states, and a second axis 504, which includes, for example, two valley-orbit eigenstates Ax:U and By:V for defect 204. For example, Ax:U is a valley-orbit eigenstate 1s:T2(G8) and By:V is a valley-orbit eigenstate 1s:E. Therefore, the first computational state |0>506 and the second computational state |1>508 can be the same as those in code 3 in Table 400. Therefore, the transition 510 between the first computational state 506 and the second computational state 508 can be via... Figure 3B The transition 358 shown occurs.

[0120] Figure 5BThis includes a first axis 552, which includes two spin states, up and down, and a second axis 554, which includes, for example, two valley-orbit eigenstates Ax:U and By:V for defect 204. For example, Ax:U is a valley-orbit eigenstate 1s:A, and By:V is a valley-orbit eigenstate 1s:E. Therefore, the first computational state 556 and the second computational state 558 can be the same as those in code 4 in Table 400. The transition between the first computational state 556 and the second computational state 558 can occur via transition 560, for example, a sigma-Y operation. The transition between the first computational state 556 and the second computational state 558 can be via transition 560 or can be a multi-step transition. For example, via transition 562—a transition without spin flipping, and transition 564—through a spin flip of temporary state 557.

[0121] Figure 6A and Figure 6B This is a schematic diagram illustrating the measurement operation of defect 204 via an auxiliary observable (e.g., a photon). Figure 6A The first quantum state 602 includes a defect in the semiconductor material, such as defect 204. The first quantum state 602 comprises a linear combination of a first computational state and a second computational state for (e.g., defined at) the defect. The first quantum state may be a partial trajectory of a large entanglement state among multiple qubits. Figure 6A This includes a second quantum state 604 for assisting observables (e.g., auxiliary photons that can propagate near defects).

[0122] In the first computational state, an auxiliary photon is prepared. The computational state of the photon can be based on the photon's degrees of freedom, including but not limited to: polarization (e.g., horizontal to vertical, clockwise to counterclockwise); presence or absence; presence within a certain time period; frequency; phase; and combinations thereof. A controller, such as processor 105, performs multi-qubit operations on the defect and the auxiliary observable. For example, as shown, the multi-qubit operation is a CNOT gate. The multi-qubit operation can be any entangled operation, such as a CNOT gate, a CPHASE operation, a CPHASE operation plus a single-qubit operation, etc. The multi-qubit operation can alternatively be a non-entangled SWAP operation, a SWAP operation plus a single-qubit operation, etc. The controller, such as processor 105, implements the measurement 608 of the auxiliary observable.

[0123] During time interval 610, the first quantum state 602 and the second quantum state 604 have a joint state α|00〉+β|10>. As shown, the controller executes the CNOT gate 606 on the first quantum state 602 and the second quantum state 604. During time interval 612, the first quantum state 602 and the second quantum state 604 have a joint state α|00〉+β|11>. When measurement 608 is a strong measurement, measurement 608 fixes (e.g., folding, projection) the state of the defect. Measurement 608 can be a quantum nondestructive measurement (QND) in a selected basis (e.g., a Z basis for calculating the Hamiltonian). If the Hamiltonian describing the interaction between the observable and the measuring device is exchanged with the observable, i.e., if [O, H int If ] = 0, then a QND measurement is obtained. In the given example, a possible QND measurement observable is the Z basis of the spin-valley-orbit state in the defect, and the measurement device is represented by or acts on an auxiliary photon. See Braginsky, VB; and F. Ya. Khalili, 1996 Rev. Mod. Phys. 68(1): 1-11.

[0124] Figure 6B This schematically illustrates one manifestation of quantum nondestructive measurement of defects. Figure 6B The system includes a first quantum state 602, which is a linear combination of a first computational state and a second computational state of the defect, and a second quantum state 604 of the auxiliary observable. A controller performs multi-qubit operations, such as a CNOT gate 606, on the first quantum state 602 and the second quantum state 604. The controller implements a quantum non-destructive measurement 608 of the auxiliary observable. When measurement 608 is a strong measurement, it fixes (e.g., folds, projects) the state of the defect to a result 622. The measurement process can be iterated by a loop 654. If the first QND measurement returns a result 622 corresponding to state |0>, each subsequent iteration of the QND measurement loop is applied to the folded input state (i.e., result 622) and also returns result |0>. If the first QND measurement returns a result 622 corresponding to state |1>, each subsequent iteration of the QND measurement loop is applied to the folded input state (i.e., result 622) and also returns result |1>. The number of occurrences of the result can be recorded in a variable 652, for example, n0 is the count of result |0>. Therefore, the controller can perform high-fidelity readout on a specific basis even in the presence of photon loss.

[0125] Figure 7This is a schematic diagram illustrating a quantum information processor 700. The quantum information processor 700 includes a semiconductor material 202, a pair of exemplary defects 204-1 and 204-2, and a coupler 702. The coupler 702 includes an optical structure disposed in or on the semiconductor material 202, close to defects 204-1 and 204-2. Defect 204-1 is spaced apart from the coupler 702 by a distance 704, and defect 204-2 is spaced apart from the coupler 702 by a distance 706. Distances 704 and 706 may be different. Distances 704 and / or 706 may be negligible. Defect 204-1 may be disposed on a first side of the coupler 702, while defect 204-2 may be disposed on a second side of the coupler 702. A controller may instruct an input subsystem, such as processor 105, to instruct a quantum subsystem 156 to transmit photons through the coupler 702. When the distances 704 and 706 are sufficiently small, given the refractive index and physical layout of the semiconductor material 202 and the coupler 702, photons in the coupler 702 can couple to defects 204-1 and 204-2. Therefore, a controller can implement or influence (e.g., cause or alter) multi-qubit operations via coupler photons disposed in the coupler 702. Although one coupler (702) and two defects (204-1 and 204-2) are shown, the quantum information processor 700 can include a different number of defects and couplers. For example, the quantum information processor 700 can include three defects per coupler.

[0126] The controller can realize or influence (e.g., cause or alter) multi-qubit operations via virtual photons through coupler 702, for example, via vacuum-state coupling defects 204-1 and 204-2. The controller can control multi-qubit operations by altering the optical properties of coupler 702. For example, by injecting charge carriers (e.g., electrons, holes) into coupler 702 via circuitry 708 disposed in, on, or near semiconductor material 202. The charge carriers alter the refractive index of coupler 702 and realize or influence (e.g., cause or alter) multi-qubit operations via virtual photons passing through coupler 702.

[0127] Figure 8A quantum information processor 800 is schematically illustrated. The quantum information processor 800 includes a semiconductor material 202 and a plurality of defects 204, such as light-emitting point defects. The plurality of defects 204 includes a first defect, a second defect, etc. The plurality of defects 204 are shown in the form of a regular two-dimensional array or lattice, but may be in an irregular lattice due to design or manufacturing inaccuracies. The plurality of defects 204 may have a one-dimensional, two-dimensional, or more-dimensional logic lattice. The plurality of defects 204 may extend in one, two, or three directions in the semiconductor material 202. The quantum information processor 800 includes various optical structures 802, 804, etc. The optical structures may include waveguides and resonators. The waveguide 802 is close (e.g., close enough for near-field or evanescent wave interaction) to at least one defect, as shown, a pair of defects 204. The waveguide 802 may be included in a coupler, such as coupler 702. The waveguide 802 may be included in the implementation of Figure 6A and Figure 6B , Figure 12 In the readout device described in the above.

[0128] Waveguide 804 (e.g., defined in semiconductor material 202) is located near a plurality of defects 204. As shown, waveguide 804 extends diagonally over some of the defects 204 but does not need to extend in a straight line or cover the defects 204. Waveguide 806 is located near a plurality of defects including defect 204. For example, waveguide 806 may cover semiconductor material 202 in the vicinity of a plurality of defects including defect 204. Waveguide 806 extends away from semiconductor material 202 and may serve as part of quantum information channel 170, input system 156, etc. Waveguide 808 may be located near one of the defect settings including the plurality of defects 204. Waveguide 808 may serve as part of channel 170, input system 156, etc.

[0129] The quantum information processor 800 includes a resonator 810 surrounding a first defect among a plurality of defects 204. The resonator 810 can be used to initialize, manipulate, or read out the state of the associated first defect. The quantum information processor 800 also includes a resonator 812 adjacent to a second defect among the plurality of defects 204. The resonator 812 can be used to initialize, manipulate, or read out the state of the associated defect. In some implementations, the resonator and waveguide are adjacent to one or more defects.

[0130] In a quantum information processor 800, a plurality of defects 204 are arranged in an array or lattice, wherein each of the plurality of defects 204 is spaced apart from another defect by one of a plurality of offsets or translations. For example, transitions 820 and 822. In some implementations, the plurality of defects 204 all include the same computational state. The plurality of defects 204 may include a first group (e.g., one or more) of defects having a first pair of computational states and a second group (e.g., one or more) of defects having a second pair of computational states. (See at least [link to relevant document]). Figure 9 The description.

[0131] Multiple defects 204 may include corresponding defects having multiple corresponding qubits. For example, a first defect may include a first qubit having a valley-orbit state, and a second defect may include a second qubit having a spin state.

[0132] Figure 9 A quantum information processor 900 is schematically illustrated. The quantum information processor 900 includes a semiconductor material 202 and a plurality of defects 204 having different computational states. In the quantum information processor 900, as shown, the plurality of defects 204 are arranged in an array or lattice defined by translations 902 and 904. The lattice can be a logical lattice or a physical lattice. In some implementations, each of the plurality of defects 204 includes a plurality of computational states (e.g., such as...). Figure 4 As shown, the first defect included in defect 204 can use code 3 and the second defect can use code 5. For example, as Figure 9 As shown, there are five (5) types of computational states (labeled A to E) used in multiple defects 204. As shown, the computational state of the defect changes between rows in the quantum information processor 900 at the beginning of a row. Therefore, similar defect pairs with the same computational state are distributed across the quantum information processor 900. Since the energy difference varies with the computational state, single-qubit operations and multi-qubit operations based on a specific energy difference can be applied to some or all of the quantum information processor 900 while having a low chance of affecting other (i.e., non-target) defects.

[0133] Figure 10An example method 1000 (including, for example, actions 1002, 1004) for operation of quantum information processors such as quantum information processors 200 and 800 is shown. For method 1000, as with other methods taught herein, various actions may be performed in a different order than those shown and described. Furthermore, these methods may omit some actions and / or employ additional actions. One or more actions of method 1000 may be performed by or via one or more circuits (e.g., one or more hardware processors). In some implementations, method 1000 is performed by a controller, such as control subsystem 104 of system 100.

[0134] Method 1000 typically begins with a call to the controller. At 1002, the controller prepares an environment for a semiconductor body comprising one or more defects. For example, the controller executes processor-executable instructions that, upon execution, cause the environment subsystem and / or input subsystem 156 to prepare the means 200. The controller can prepare the semiconductor body comprising one or more defects based on electrical, magnetic, thermal, or strain distributions (i.e., variations in one or more of magnetic, electric, strain, and thermal fields).

[0135] At 1002, the controller can prepare one or more defects in a specific charge state (e.g., neutral, ionized). For example, a diatomic particle in a neutral state has two bound electrons, and when one electron is ionized individually, the defect can be ionized by photoionization, by applying charge carriers to the surrounding semiconductor material, etc.

[0136] At 1004, the controller prepares one or more defects in a reference state that includes an orbital state. For example, a valley-orbit state or a spin-valley-orbit state. That is, a reference state exists for multiple defects. For a representative defect among one or more defects, the reference state includes a spin-valley-orbit state, such as an orbital state split by valley and spin interactions. The controller can prepare one or more defects in the reference state in different ways, including actions 1006, 1008, and 1010.

[0137] At 1006, the controller prepares one or more defects in a reference state by executing processor-executable instructions that, upon execution, cause the input subsystem to pump one or more defects to the reference state. For example, processor 105 may instruct input subsystem 156 to excite or boost defects using an optical or electrical input device. Figure 4 The computation state of the code shown.

[0138] At 1008, the controller prepares one or more defects in a reference state by executing processor-executable instructions that, when executed, cause the quantum information processor to wait for one or more defects to relax to the reference state.

[0139] At point 1010, the controller prepares one or more defects in a reference state by executing processor-executable instructions that, upon execution, cause the quantum information processor to read out one or more defects. That is, it measures the state of one or more defects (e.g., measuring defect 204). The controller can read out the state as at least referred to herein. Figure 1 , Figure 6A , Figure 6B and Figure 12 The state of one or more defects described.

[0140] The controller can perform parity measurements, for example, measuring the aggregate properties of multiple defects within one or more defects. This document at least refers to... Figure 1 and Figure 12 An example describing parity measurement.

[0141] If the state of one or more defects is not the baseline state, then at 1012, the controller can manipulate the defects to the baseline state. For example, if a defect is measured by the controller and has a state |1>, the controller can perform a bit-flipping operation on that defect, such as σ X |1>=|0>。This article at least refers to Figure 11 and Figure 13 An example of a single-qubit operation is described. Alternatively, if the state of one or more defects is not a baseline state, then at 1012, the controller can manipulate the defect based on the defect being in another state, such as a second computational state.

[0142] Method 1000 ends until it is called again. Method 1000 can be followed by one or more other methods, such as method 1100.

[0143] Figure 11 An example method 1100 (including, for example, actions 1102, 1104) for the operation of quantum information processors such as device 200 and quantum information processors 700 and 900 is shown. One or more actions of method 1100 may be performed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1100 is performed by a controller, such as processor 105 of system 100.

[0144] Method 1100 typically begins with a call from the controller. At 1102, the controller initializes one or more defects in a state that includes an orbital state. For example, the controller prepares one or more defects in a baseline state that includes an orbital state (e.g., spin-valley-orbit). The controller can prepare one or more defects in the baseline state by executing method 1000.

[0145] At 1104, the controller applies one or more operations to manipulate the state of one or more defects. For example, the controller executes processor-executable instructions, and in response to executing processor-executable instructions, the controller instructs one or more operations to manipulate the computational state of one or more defects. At 1106, the controller applies one or more single-qubit operations to manipulate the state of one or more defects. At 1108, the controller applies one or more multi-qubit operations to manipulate the state of two or more defects. For example, processor 105 may execute dedicated information processor control instructions 130 to instruct defects 204-1 and 204-2 in quantum information processor 700 to optically couple.

[0146] At point 1110, the controller reads the status of one or more defects. This document at least refers to... Figure 1 , Figure 6A , Figure 6B and Figure 12 This describes an example of how a controller reads the status of one or more defects.

[0147] Method 1100 ends until it is called again.

[0148] Figure 12 An example method 1200 for operation of quantum information processors such as quantum information processors 700 and 900 is shown. One or more actions of method 1200 (e.g., actions 1102, 1104, 1110, 1202, 1204) may be performed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1200 is performed by a controller, such as control subsystem 104 of system 100.

[0149] Method 1200 typically begins with a call from the controller. At 1102, the controller initializes one or more defects to a baseline state. At 1104, the controller applies one or more operations to manipulate the state of one or more defects.

[0150] At 1110, the controller reads out the state of one or more defects. The controller can read out the state of one or more defects in different ways, including actions 1202, 1204, 1206, and 1208. At 1202, the controller detects the emission and state of a photon from one of the one or more defects. For example, the output subsystem 158 includes a measurement device pointing to a waveguide 808 included in the quantum information processor 800. At 1204, the controller maps the state of the defects included in one or more defects to an auxiliary photon. This document refers at least to... Figure 6A and Figure 6B An example illustrating the mapping from the state of a defect to the state of an auxiliary photon is described. At 1208, the controller measures one or more spins associated with one or more defects. The spin state can indicate the calculated state of the defect. That is, the difference between two calculated states lies in the spin value, for example... Figure 4 Code 4 is shown in the image. This document refers at least to... Figure 15 Examples of measurements of one or more spins associated with one or more defects are described.

[0151] The controller can use measurement techniques known in quantum information processing at actions 1202, 1204, or 1206. For example, the controller can perform parity measurements at actions 1202, 1204, or 1206, such as measuring the aggregate property of multiple defects in one or more defects. (At least referenced herein...) Figure 1 and Figure 12 An example of parity measurement is described.

[0152] The controller can perform measurements on a superimposed basis at actions 1202, 1204, or 1206. At actions 1202, 1204, or 1206, the controller can measure a first defect, or an auxiliary defect or reporting defect, via associated components such as optical structures. Method 1200 ends until it is called again.

[0153] Figure 13 An example method 1300 for the operation of quantum information processors such as device 200, quantum information processors 700, 800, and 900 is illustrated. One or more actions of method 1300 (e.g., actions 1102, 1106, 1302, 1304, etc.) may be performed by or via one or more circuits (e.g., one or more hardware processors). In some implementations, method 1300 is performed by a controller, such as processor 105 of system 100. In some implementations, processor 105 executes quantum information processor control instructions 130, and in response, system 100 executes method 1300.

[0154] Apart from the other parts, Figure 13The operation 1106 of quantum information processors such as device 200, quantum information processor 800 and 900 is shown.

[0155] Method 1300 typically begins with a call from the controller. At 1102, the controller initializes one or more defects to a baseline state. At 1106, the controller applies one or more single-qubit operations to manipulate the state of one or more defects. The controller may apply one or more single-qubit operations to manipulate the state of one or more defects in different ways, including actions 1302, 1304, and 1306.

[0156] At 1302, the controller applies (or causes to apply) pulse signals to one or more defects. The pulse signal is a time-varying (e.g., shaped) signal with appropriate phase and duration to achieve a gate operation at an appropriate frequency (e.g., an energy difference close to the computational state). For example, the controller may apply pi / 2sigma-X pulses to one or more defects. The pulse signal may be implemented via a magnetic manipulation subsystem comprising coil 210, antenna 212, and waveform generator, such as the Tektronix AWG5200 generator available from Tektronix, Inc., Beaverton, Oregon, USA.

[0157] At 1302, the controller can apply a signal at an appropriate frequency, such as the frequency corresponding to the energy difference between the computational states of the qubit in its rotating coordinate system. For example, the qubit can be driven by a series of pulses along a path defined on a Bloch sphere, thereby changing the effective energy difference between the computational states. Such a driven qubit can be manipulated to this changed energy difference via a near-resonant signal.

[0158] At 1302, the controller can apply a signal by the sum or difference of two main signals. For example, the controller causes the input subsystem to apply two pulses with a frequency difference that is "approximately calculated".

[0159] In some implementations, the controller goes through processes such as Figure 5B The transitions 562, 564, and temporary state 557 shown herein indicate intermediate (temporary) states that influence the operation of a single qubit. That is, the controller applies multiple pulses via the input subsystem. For example, the first pulse includes a first frequency corresponding to the energy difference between the first computational state and the temporary state. The second pulse includes a second frequency related to the energy difference between the temporary state and the first and second computational states.

[0160] At 1304, the controller alters (or causes to be altered) the physical conditions of one or more defects. For example, the controller may instruct input subsystem 156 to change the distribution of magnetic fields, electric fields, strain, and heat. For example, the controller may cause electrode 208 to change the electric field of defect 204. The controller may operate light source 206 to change the electric field of defect 204. In some implementations, the controller may change the magnetic field distribution via one or more magnetic input components, such as coil 210. The controller may change the strain distribution (e.g., intensity, position, gradient, anisotropy) via one or more mechanical input devices. In some implementations, the controller may change the thermal distribution of one or more quantum information processors. For example, the controller may cause heater 217 and cooler 218 to change the temperature of the defect.

[0161] At 1306, the controller manipulates (or causes to be manipulated) the spins associated with one or more defects. The controller can apply (or cause to be applied) pulse signals to one or more defects. The pulse signals can be implemented via the magnetic manipulation subsystem, coil 210, and antenna 212. The pulse signals can be directed to the electron spins or nuclear spins associated with one or more defects. The controller can map information from computational (e.g., spin-valley-orbit) states associated with one or more defects to one or more spin states, manipulate one or more spin states, and map one or more spin states back to the computational states of one or more defects. The controller can map information from a first set of computational (e.g., spin-valley-orbit) states associated with one or more defects to a second set of computational states, manipulate the information within the second set of computational states, and map the information back to the first set of computational states of one or more defects. In other words, at 1306, the controller manipulates defects by temporarily manipulating associated degrees of freedom, such as spins, to impart phase to the superposition of computational (e.g., orbital) states. At position 1306, the controller can manipulate other auxiliary degrees of freedom.

[0162] Method 1300 ends until it is called again.

[0163] Figure 14 An example method 1400 for operation of quantum information processors such as quantum information processors 700, 800, and 900 is illustrated. One or more actions of method 1400 (e.g., actions 1102, 1108, 1402, 1404) may be executed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1400 is executed by a controller, such as a control subsystem 104 of system 100. In some implementations, control subsystem 104 executes quantum information processor control instructions 130, and in response, system 100 executes method 1400.

[0164] Apart from the other parts Figure 14 An example of the operation 1108 of quantum information processors such as device 200, quantum information processor 700 and 900 is shown.

[0165] Method 1400 typically begins with a call from the controller. At 1102, the controller initializes one or more defects to a baseline state. At 1108, the controller applies one or more multi-qubit operations to manipulate the states of two or more defects. The controller may apply one or more multi-qubit operations to manipulate the states of two or more defects in different ways, including actions 1402, 1404, 1406, and 1408. Unless the context otherwise indicates, "two" as used herein includes two or more.

[0166] At 1402, the controller brings the two defects close to resonance. For example, the controller can make... Figure 9 The defects 204 of type A and type B shown are near resonance. For one or more of the two defects, the controller can change the electric field and / or magnetic field and / or strain. The first defect may have a first transition between a pair of computational states, and the second defect may have a second transition between another pair of computational states. Pairs of computational states may be logically equivalent, for example, two pairs of |0> and |1>, which may be based on the same or different orbital states. The controller can make the first transition resonate with the second transition. That is, the resonance condition may be the energy difference between the first and second computational states for each defect. The controller can bring two or more defects into near resonance by driving the first transition of the first defect at or nearly at the frequency of the second transition of the second defect. The controller can bring two or more defects into near resonance by driving two or more defects at the same or nearly the same rotational frequency. The controller can bring two or more defects into near resonance to make transitions in the rotating coordinate system of the respective defects. See S.R. Hartmann and E.L. Hahn, 1962 Phys. Rev. 128: 2042–2053.

[0167] At 1404, the controller modulates the interaction between the two defects via coupler photons in a coupler located near the two defects. For example, coupler 702—an optical structure—is positioned near the first defect 204-1 and the second defect 204-2 and communicatively coupled to an input subsystem, such as input subsystem 156. The controller can, in response to executing processor-executable instructions, instruct the input subsystem to couple the first and second defects via at least one coupler photon disposed in the coupler.

[0168] At 1406, the controller modulates the interaction between the two defects via virtual photons in a coupler located near the two defects. The controller can, in response to executing processor-executable instructions, instruct the input subsystem to couple the first and second defects via virtual photons positioned in the coupler. That is, the first and second defects interact via the vacuum state of the coupler. The controller can implement multi-qubit operations, at least as described above, by, for example, tightening the coupler or changing the charge carriers in the coupler. Figure 7 As shown and described.

[0169] At 1408, the controller couples the two defects via intermediate transitions. For example, the coupler includes transitions that selectively resonate with transitions in the first and second defects. The controller can cause the input subsystem to bring the first transition of the first defect, the second transition of the second defect, and the third intermediate coupler transition into near resonance. Method 1400 ends until it is called again.

[0170] Figure 15 An example method 1500 for operation of quantum information processors such as quantum information processors 800 and 900 is illustrated. One or more actions of method 1500 (e.g., actions 1102, 1502, 1504) may be executed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1500 is executed by a controller, such as processor 105 of system 100. In some implementations, processor 105 executes dedicated information processor control instructions 130, and in response, system 100 executes method 1500.

[0171] Figure 15 Implementations of operating methods for quantum information processors such as quantum information processors 700 and 900 are shown. Method 1500 includes actions of mapping information from an orbital state to a spin state and / or mapping information from a spin state to an orbital state.

[0172] Method 1500 typically begins with a call from the controller. At 1102, the controller initializes one or more defects to a baseline state. At 1502, optionally, the controller applies one or more operations to manipulate the orbital states of one or more defects. At 1504, the controller maps the orbital states of one or more defects to one or more spin states of one or more defects. At 1506, optionally, the controller manipulates the spin states of one or more defects. For example, input subsystem 156 manipulates a first linear combination of a first spin state and a second spin state into a second linear combination of spin states.

[0173] At 1508, optionally, the controller causes the output subsystem, such as output subsystem 158, to measure one or more spin states of one or more defects. This document refers at least to Figure 12 An example of measuring one or more spins associated with one or more defects is described. At 1510, the controller maps one or more spin states of one or more defects to the calculated (e.g., orbital) states of one or more defects.

[0174] Method 1500 ends until it is called again. After method 1500, other methods or actions can follow, such as referencing... Figure 12 The methods or actions described.

[0175] Example

[0176] Examples of quantum information processing devices and systems are described below.

[0177] An example quantum information processing device includes a silicon body and one or more deep-level defects disposed within the semiconductor body. Each deep-level defect within the one or more deep-level defects has multiple orbital states. These multiple orbital states include a pair of orbital states representing computational information. The quantum information processing device also includes a control system communicatively coupled to the semiconductor body and operable to selectively create linear combinations of states from the pairs of orbital states representing computational information.

[0178] The example information processing system includes a quantum information processor. The quantum information processor includes a semiconductor body. A first deep-level defect is disposed within the semiconductor body. The first deep-level defect includes: a first plurality of spin-valley-orbit states; a first computational state including the first spin-valley-orbit state among the first plurality of spin-valley-orbit states; and a second computational state including the second spin-valley-orbit state among the first plurality of spin-valley-orbit states.

[0179] The following describes example operating methods of quantum information processing devices and systems (such as those disclosed herein).

[0180] An example information processing system includes a quantum information processor. The quantum information processor includes a semiconductor body, a first deep-level defect disposed within the semiconductor body, an input subsystem communicatively coupled to the quantum information processor, and at least one processor communicatively coupled to the input subsystem.

[0181] Example methods for operating such an information processing system include initializing a first defect to a first computational state, including a first spin-valley-orbit state, via an input subsystem.

[0182] Example 1: A quantum information processing device includes a semiconductor body primarily composed of silicon and one or more defects disposed within the semiconductor body. Each defect among the one or more defects has a plurality of orbital states, and the plurality of orbital states include pairs of orbital states representing computational information. The device also includes a control system comprising circuitry communicatively coupled to the semiconductor body and, in response to the execution of processor-executable instructions, creating linear combinations of states from the pairs of orbital states representing computational information.

[0183] Example 2: According to the apparatus of Example 1, the plurality of orbital states further includes a plurality of valley-orbital states, wherein the semiconductor body splits at least one orbital state included in the plurality of orbital states into a plurality of valley-orbital states. Furthermore, the paired orbital states representing computational information include a first computational state and a second computational state, the first computational state including a first valley-orbital state included in the plurality of valley-orbital states, and the second computational state including a second valley-orbital state included in the plurality of valley-orbital states.

[0184] Example 3: According to the apparatus of Example 2, the plurality of orbital-valley states further include a plurality of spin-valley-orbit states, wherein electron spin, or electron spin and nuclear spin, splits at least one valley-orbit state included in the plurality of valley-orbit states into a plurality of spin-valley-orbit states. Furthermore, the first computational state also includes a first spin-valley-orbit state included in the plurality of spin-valley-orbit states. The second computational state also includes a second spin-valley-orbit state included in the plurality of spin-valley-orbit states.

[0185] Example 4: The apparatus according to Examples 1 to 3 is characterized in that the control system further includes a magnetic input component and a radio frequency input component, the magnetic input component applying a magnetic field to one or more defects disposed within the semiconductor body in response to the execution of processor-executable instructions, and the radio frequency input component applying a radio frequency pulse to one or more defects disposed within the semiconductor body in response to the execution of processor-executable instructions.

[0186] Example 5: The apparatus according to Examples 1 to 4 is characterized in that the control system further includes an antenna that changes the electric field incident on the semiconductor body in response to the execution of processor-executable instructions.

[0187] Example 6: According to the apparatus of Examples 1 to 5, the control system further includes an actuator that changes the strain distribution of the semiconductor body in response to the execution of processor-executable instructions.

[0188] Example 7: According to the apparatus of Examples 1 to 6, the control system further includes a cooler that changes the heat distribution of the semiconductor body in response to the execution of processor-executable instructions.

[0189] Example 8: According to the apparatus of Examples 1 to 7, the control system further includes an optical input component that, in response to the execution of processor-executable instructions, applies light to the semiconductor body at a first frequency close to the second frequency. This second frequency corresponds to the energy difference between pairs of orbital states representing computational information.

[0190] Example 9: The apparatus according to Examples 1 to 8 further includes a readout system coupled to the semiconductor body and operable to read out the state of one or more defects disposed within the semiconductor body.

[0191] Example 10: An apparatus according to Examples 1 to 9, wherein one or more defects include a first defect and a second defect, and the apparatus further includes: a coupler that is communicatively coupled to the first defect and the second defect, and that couples the first defect and the second defect in response to the execution of processor-executable instructions.

[0192] Example 11: According to the apparatus of Examples 1 to 10, at least one of the one or more defects is a point defect, a deep level defect, a luminescent defect, an interstitial defect, a vacancy defect, a substitution defect, or a damage center.

[0193] Example 12: An information processing system including a quantum information processor, the quantum information processor comprising: a semiconductor body primarily composed of silicon; and a first defect disposed within the semiconductor body. The first defect includes a first plurality of spin-valley-orbit states, the first plurality of spin-valley-orbit states including a first spin-valley-orbit state and a second spin-valley-orbit state. The system further includes a control subsystem including circuitry communicatively coupled to the quantum information processor, at least one processor communicatively coupled to the control subsystem, and at least one tangible computer-readable storage device communicatively coupled to the at least one processor. The storage device stores processor-executable instructions, which, when executed by the at least one processor, cause the at least one processor to instruct the control subsystem to initialize the first defect to a first computational state including the first spin-valley-orbit state.

[0194] Example 13: According to the system of Example 12, wherein a processor-executable instruction instructs a control subsystem to initialize a first defect to a first computational state, and when executed, the processor-executable instruction causes at least one processor to wait for the first defect to relax to the first computational state.

[0195] Example 14: According to the system of Examples 12 to 13, a processor-executable instruction instructs a control subsystem to initialize a first defect to a first computational state, and when executed, the processor-executable instruction causes at least one processor to pump the first defect to the first computational state.

[0196] Example 15: According to the system of Examples 12 to 14, a processor-executable instruction instructs a control subsystem to initialize a first defect to a first computational state, and when executed, the processor-executable instruction causes at least one processor to measure the first defect to achieve a projection onto the first computational state or a second computational state including a second spin-valley-orbit state.

[0197] Example 16: According to the system of Examples 12 to 15, wherein when the first defect is in the second computation state, a processor-executable instruction instructs the control subsystem to initialize the first defect to the first computation state, and when the processor-executable instruction is executed, causes at least one processor to instruct the control subsystem to manipulate the first deep-level defect to the first computation state, or to instruct the control subsystem to manipulate the first defect based on the first defect being in the second computation state.

[0198] Example 17: According to the system of Examples 12 to 16, wherein the processor-executable instructions, when executed, also cause at least one processor to instruct a control subsystem to manipulate a first defect to a linear combination of a first computational state and a second computational state.

[0199] Example 18: According to the system of Example 17, wherein a processor-executable instruction instructs a control subsystem to manipulate a defect to a first linear combination of a first computational state and a second computational state, and the processor-executable instruction, when executed, causes at least one processor to apply an input signal via the control subsystem that is close to resonant with the energy difference between the first computational state and the second computational state.

[0200] Example 19: According to the system of Example 17, a processor-executable instruction is applied via a control subsystem to an input signal that is close to resonant with the energy difference between a first computational state and a second computational state. When executed, the processor-executable instruction causes at least one processor to: perform a sigma-X operation, perform a sigma-Y operation, or perform a sigma-Z operation.

[0201] Example 20: A system according to Examples 12 to 19, wherein the first defect includes a plurality of spin states, the plurality of spin states including a first spin state and a second spin state, and wherein, when executed, a processor-executable instruction further causes at least one processor to map a first linear combination of the first computational state and the second computational state to a second linear combination of the first spin state and the second spin state via a control subsystem.

[0202] Example 21: According to the system of Example 20, wherein the processor-executable instructions, when executed, also cause at least one processor to instruct a control subsystem to manipulate a second linear combination of the first spin state and the second spin state into a third linear combination of the first spin state and the second spin state.

[0203] Example 22: According to the system of Example 21, wherein the processor-executable instructions, when executed, also cause at least one processor to map a third linear combination of a first spin state and a second spin state to a fourth linear combination of a first computation state and a second computation state via a control subsystem.

[0204] Example 23: According to the system of Example 20, wherein the processor-executable instructions, when executed, also cause at least one processor to map a second linear combination of the first spin state and the second spin state to a fourth linear combination of the first computation state and the second computation state via a control subsystem.

[0205] Example 24: The system according to Examples 12 to 23 further includes an output subsystem communicatively coupled to at least one processor and a quantum information processor. Furthermore, the processor-executable instructions, when executed, also cause at least one processor to instruct the output subsystem to read the state of the first defect.

[0206] Example 25: The system according to Example 24, wherein a processor-executable instruction reads the state of a first defect, and when executed, the processor-executable instruction causes at least one processor to measure photons emitted from the first defect.

[0207] Example 26: According to the system of Example 25, wherein a processor-executable instruction reads the state of a first defect, and when executed, the processor-executable instruction causes at least one processor to instruct an output subsystem to map the state of the first defect to an auxiliary photon close to the first defect, and instructs the output subsystem to measure the state of the auxiliary photon.

[0208] Example 27: According to the system of Example 26, wherein a processor-executable instruction instructs an output subsystem to measure the state of an auxiliary photon, and the processor-executable instruction, when executed, causes at least one processor to instruct the output subsystem to measure the state of the auxiliary photon via quantum nondestructive measurement.

[0209] Example 28: According to the system of Example 25, wherein the first defect includes a plurality of spin states, the plurality of spin states including a first spin state and a second spin state, and wherein processor-executable instructions, when executed, further cause at least one processor to map a first linear combination of the first computational state and the second computational state to a second linear combination of the first spin state and the second spin state via a control subsystem. Processor-executable instructions for reading the state of the first defect, when executed, cause at least one processor to measure the spin states included in the plurality of spin states.

[0210] Example 29: The system according to Examples 12 to 28 further includes a second defect disposed within the semiconductor body. The second defect includes a second plurality of spin-valley-orbit states, the second plurality of spin-valley-orbit states including a third spin-valley-orbit state and a fourth spin-valley-orbit state. Furthermore, a third computational state includes a third spin-valley-orbit state, and a fourth computational state includes a fourth spin-valley-orbit state.

[0211] Example 30: The system according to Example 29, wherein the first computation state is logically equivalent to the third computation state, and the second computation state is logically equivalent to the fourth computation state.

[0212] Example 31: According to the system of Example 30, the first spin-valley-orbit state is equal to the third spin-valley-orbit state, and the second spin-valley-orbit state is equal to the fourth spin-valley-orbit state.

[0213] Example 32: The system according to Example 29 further includes a coupler arranged close to the first defect and the second defect and communicatively coupled to the control subsystem, and the device further includes, wherein processor-executable instructions, when executed, also cause at least one processor to instruct the control subsystem to couple the first defect and the second defect.

[0214] Example 33: According to the apparatus of Example 32, when executed, the processor-executable instructions for coupling the first defect and the second defect further cause at least one processor to instruct a control subsystem to couple the first defect and the second defect via coupler photons disposed in the coupler. When executed, the processor-executable instructions for coupling the first defect and the second defect further cause at least one processor to instruct the control subsystem to couple the first defect and the second defect via virtual photons disposed in the coupler, and instruct the control subsystem to bring a first transition between a first computational state and a second computational state and a second transition between a third computational state and a fourth computational state to near resonance. Alternatively, if the coupler includes a third transition, the control subsystem is instructed to cause the first transition, the second transition, and the third transition to near resonance.

[0215] Example 34: According to the system of Examples 12 to 28, the first defect is a point defect, a deep level defect, a luminescent defect, an interstitial defect, a vacancy defect, a substitution defect, or a damage center.

[0216] Example 35: According to the system of Examples 29 to 33, the second defect is a point defect, a deep level defect, a luminescent defect, an interstitial defect, a vacancy defect, a substitution defect, or a damage center.

[0217] Example 36: A method of operating an information processing system, the information processing system comprising: a quantum information processor including a semiconductor body, a first defect disposed within the semiconductor body, a control subsystem communicatively coupled to the quantum information processor, and at least one processor communicatively coupled to the control subsystem, the method comprising initializing the first defect to a first computational state including a first spin-valley-orbit state via the control subsystem.

[0218] Example 37: According to the method of Example 36, wherein initializing the first defect to the first computational state includes waiting for the first defect to relax to the first computational state.

[0219] Example 38: According to the method of Example 36 or 37, wherein initializing the first defect to the first computational state includes pumping the first defect to the first computational state via a control subsystem.

[0220] Example 39: According to the method of Examples 36 to 38, wherein initializing the first defect to a first computational state includes: measuring the first defect to achieve a projection of the first defect onto the first computational state or a second computational state including a second spin-valley-orbit state.

[0221] Example 40: According to the method of Example 39, wherein, when the first defect is in the second computational state, the method further includes manipulating the first defect to the first computational state via a control subsystem, or changing one or more manipulations to be performed on the first defect by the control subsystem based on the first defect being in the second computational state via at least one processor.

[0222] Example 41: The method according to Examples 36 to 40 further includes manipulating the first defect into a linear combination of a first computational state and a second computational state including a second spin-valley-orbit state via a control subsystem.

[0223] Example 42: According to the method of Example 41, wherein manipulating the first defect into a linear combination of a first computational state and a second computational state includes applying an input signal via a control subsystem that is close to resonant with the energy difference between the first computational state and the second computational state.

[0224] Example 43: According to the method of Example 41, wherein manipulating the first defect into a linear combination of the first computational state and the second computational state includes applying a sigma-X operation via the control subsystem, applying a sigma-Y operation via the control subsystem, or applying a sigma-Z operation via the control subsystem.

[0225] Example 44: According to the method of Example 41, wherein the first defect includes a plurality of spin states, the plurality of spin states including a first spin state and a second spin state, the method further includes mapping a first linear combination of the first computational state and the second computational state to a second linear combination of the first spin state and the second spin state via a control subsystem.

[0226] Example 45: The method according to Example 44 further includes manipulating a second linear combination of the first spin state and the second spin state into a third linear combination of the first spin state and the second spin state via a control subsystem.

[0227] Example 46: According to the method of Example 45, it further includes mapping a third linear combination of the first spin state and the second spin state to a fourth linear combination of the first computational state and the second computational state via a control subsystem.

[0228] Example 47: According to the method of Example 44, it further includes mapping a second linear combination of the first spin state and the second spin state to a fifth linear combination of the first computational state and the second computational state via a control subsystem.

[0229] Example 48: According to the method of Examples 36 to 47, wherein the information processing system further includes an output subsystem communicatively coupled to at least one processor and a quantum information processor, and the method further includes measuring the state of the first defect via the output subsystem.

[0230] Example 49: The method according to Example 46 further includes measuring the emitted photons from the first defect via an output subsystem.

[0231] Example 50: The method according to Example 49 further includes mapping the state of the first defect to an auxiliary photon close to the first defect, and measuring the state of the auxiliary photon via an output subsystem.

[0232] Example 51: According to the method of Example 50, wherein measuring the state of the auxiliary photon via the output subsystem further includes measuring the state of the auxiliary photon via quantum nondestructive measurement via the output subsystem.

[0233] Example 52: According to the method of Example 50, wherein the first defect includes a plurality of spin states, the plurality of spin states including a first spin state and a second spin state, and the method further includes mapping a first linear combination of the first and second calculated states to a second linear combination of the first and second spin states via a control subsystem. The method further includes measuring the spin states included in the plurality of spin states via an output subsystem.

[0234] Example 53: According to the method of Example 50, the quantum information processor further includes a second defect disposed within the semiconductor body. The method also includes measuring the parity state of the first and second defects via an output subsystem.

[0235] Example 54: According to the method of Example 38, the quantum information processor further includes a second defect disposed within the semiconductor body, a coupler located close to the first and second defects and communicatively coupled to the control subsystem. The method further includes coupling the first and second defects via the coupler.

[0236] Example 55: According to the method of Example 54, the coupling of the first defect and the second defect via the coupler further includes coupling the first defect and the second defect via coupler photons disposed in the coupler.

[0237] Example 56: According to the method of Example 54, the coupling of the first defect and the second defect via the coupler further includes coupling the first defect and the second defect via virtual photons disposed in the coupler.

[0238] Example 57: According to the method of Examples 36 to 56, wherein the first defect has a second computational state including a second spin-valley-orbit state, the quantum information processor further includes a second defect disposed within the semiconductor body, and has a third computational state including a third spin-valley-orbit state and a fourth computational state including a fourth spin-valley-orbit state. The method further includes: bringing a first transition between the first and second computational states to near resonance with a second transition between the third and fourth computational states.

[0239] Example 58: According to the method of Example 57, wherein the quantum information processor further includes a coupler that is close to the setting of the first defect and the second defect, and the coupler includes a third transition, the method further includes bringing the first transition, the second transition, and the third transition into near resonance.

[0240] Unless otherwise stated herein, or unless the context clearly specifies otherwise, the term for modifying a numerical value refers to plus or minus ten percent (10). Unless otherwise stated, or unless the context clearly specifies otherwise, the term "between two numerical values" should be understood as encompassing both numerical values.

[0241] The above description includes specific details to provide an understanding of the various disclosed implementations. However, those skilled in the art will recognize that implementations can be practiced without one or more of these specific details, parts of the method, components, materials, etc. In some cases, well-known structures associated with semiconductors and / or optical devices and / or quantum computing and / or quantum information processing, such as targets, substrates, lenses, waveguides, shielding, filters, lasers, and processor-executable instructions (e.g., BIOS, drivers), have not been shown or described in detail to avoid unnecessarily obscuring the description of the disclosed implementations.

[0242] In this specification and the appended claims, the terms "a," "the," "an," or "another" used to describe "implementation," "example," or "mode of implementation" are used in the sense that a particular reference feature, structure, or characteristic described in connection with an implementation, example, or mode of implementation is included in at least one implementation, example, or mode of implementation. Therefore, phrases such as "in one implementation," "in an implementation," or "another implementation" do not necessarily all refer to the same implementation. Furthermore, a particular feature, structure, or characteristic may be combined in any suitable manner in one or more implementations, examples, or modes of implementation.

[0243] As used in this specification and the appended claims, singular articles such as “a,” “an,” and “the” include the plural objects referred to, unless the context requires otherwise. It should also be noted that, unless the context specifies otherwise, the term “or” is generally used in its meaning as including “and / or.”

[0244] Unless the context otherwise requires, in this specification and the appended claims, the word “comprising” and its variations, such as “including” and “having”, shall be interpreted in an open, inclusive sense, that is, as “including but not limited to”.

[0245] All U.S. patents, U.S. patent application publications, U.S. patent applications, foreign patents, foreign patent applications and non-patent publications mentioned in this specification or any application data page are incorporated herein by reference in their entirety for all purposes.

[0246] While certain features of the described embodiments and implementations are described herein, many modifications, substitutions, alterations, and equivalents will now occur to those skilled in the art. Therefore, it should be understood that the appended claims are intended to cover all such modifications and variations falling within the scope of the described embodiments and implementations.

[0247] Terminology Explanation

[0248] Unless the context clearly requires otherwise, this applies throughout the specification and claims:

[0249] • Words such as “include” and “contain” should be interpreted as encompassing, not as exclusive or exhaustive; that is, in the sense of “including but not limited to”.

[0250] • “Connection”, “coupled” or any variation thereof means any direct or indirect connection or coupling between two or more elements; the coupling or connection between elements can be physical, logical or a combination thereof;

[0251] • When used to describe this specification, the words “this article,” “above,” “below,” and similar terms should refer to the entire specification and not any particular part thereof.

[0252] Regarding a list of two or more items, "or" encompasses all of the following interpretations of the word: any item in the list, all items in the list, and any combination of items in the list;

[0253] • The singular forms “one,” “a,” and “the” also include the meaning of any appropriate plural form.

[0254] The directional terms used in the specification and any appended claims (if any), such as “vertical,” “lateral,” “horizontal,” “upward,” “downward,” “forward,” “backward,” “inward,” “outward,” “left,” “right,” “front,” “backward,” “top,” “bottom,” “below,” “above,” and “below,” depend on the specific orientation of the described and illustrated device. Various alternative orientations may be assumed for the subject matter described herein. Therefore, these directional terms are not strictly defined and should not be interpreted narrowly.

[0255] The embodiments of the present invention and the control system in the embodiments of the present invention can be implemented using specially designed hardware, configurable hardware, a programmable data processor configured by providing software (which may optionally include "firmware") executable on a data processor, a special-purpose computer or data processor specifically programmed, configured, or constructed to perform one or more steps of the methods as explained in detail herein, and / or a combination of two or more of these. Examples of specially designed hardware are: logic circuits, application-specific integrated circuits ("ASICs"), large-scale integrated circuits ("LSIs"), very large-scale integrated circuits ("VLSIs"), etc. Examples of configurable hardware are: one or more programmable logic devices, such as programmable array logic ("PALs"), programmable logic arrays ("PLAs"), and field-programmable gate arrays ("FPGAs"). Examples of programmable data processors are: microprocessors, digital signal processors ("DSPs"), embedded processors, graphics processors, math coprocessors, general-purpose computers, server computers, cloud computers, mainframe computers, computer workstations, etc. For example, one or more data processors in the control circuitry of the device can implement the methods as described herein by executing software instructions in a processor-accessible program memory.

[0256] Processing can be centralized or distributed. In the case of distributed processing, information, including software and / or data, can remain centralized or distributed. Such information can be exchanged between different functional units via communication networks such as local area networks (LANs), wide area networks (WANs) or the Internet, wired or wireless data links, electromagnetic signals, or other data communication channels.

[0257] Although procedures or blocks are presented in a given order, alternative examples may execute routines with steps in a different order or employ systems with procedures or blocks, and some procedures or blocks may be deleted, moved, added, subdivided, combined, and / or modified to provide alternatives or subcombinations. Each of these procedures or blocks can be implemented in many different ways. Furthermore, although procedures or blocks are sometimes shown to be executed serially, these procedures or blocks may alternatively be executed in parallel or may be executed at different times.

[0258] Furthermore, although the elements are sometimes shown to be executed sequentially, they may also be executed simultaneously or in a different order. Therefore, the appended claims are intended to be interpreted as including all such variations within their intended scope.

[0259] Some embodiments of the present invention are provided in the form of a program product. The program product may include any non-transitory medium carrying a set of computer-readable instructions that, when executed by a data processor, cause the data processor to perform or coordinate the execution of the methods of the present invention. The program product according to the present invention may be any of a variety of forms. The program product may include, for example, non-transitory media, such as magnetic data storage media including floppy disks and hard disk drives, optical data storage media including CD-ROMs and DVDs, electronic data storage media including ROMs, flash RAMs, EPROMs, hard-wired or pre-programmed chips (e.g., EEPROM semiconductor chips), nanotechnology memories, etc. Computer-readable signals on the program product may optionally be compressed or encrypted.

[0260] In some embodiments, the present invention can be implemented in software. For clarity, "software" includes any instructions that execute on a processor and may include (but is not limited to) firmware, resident software, microcode, etc. As those skilled in the art will appreciate, both the processing hardware and software can be wholly or partially centralized or distributed (or a combination thereof). For example, the software and other modules can be accessed via local memory, via a network, via a browser or other applications in a distributed computing environment, or via other means suitable for the purposes described above.

[0261] Unless otherwise stated, when referring to a component (e.g., software module, processor, component, device, circuit, etc.) above, the reference to that component (including the reference to “device”) should be interpreted as including any component that performs the function of the described component (i.e., functionally equivalent), including components whose structures are not structurally equivalent to those performing the functions of the illustrated exemplary embodiments of the present invention.

[0262] For illustrative purposes, specific examples of systems, methods, and apparatus are described herein. These are merely examples. The techniques provided herein can be applied to systems other than the example systems described above. Many changes, modifications, additions, omissions, and substitutions are possible within the practice of this invention. This invention includes variations of embodiments that are obvious to those skilled in the art, including variations obtained through: replacing features, elements, and / or actions with equivalent features, elements, and / or actions; mixing and matching features, elements, and / or actions from different embodiments; combining features, elements, and / or actions from embodiments as described herein with features, elements, and / or actions from other technologies; and / or omitting combinations of features, elements, and / or actions from described embodiments.

[0263] Various features are described herein as existing in "some embodiments" or "some implementations". Such features are not mandatory and may not appear in all embodiments. Embodiments of the invention may include zero, any, or any combination of two or more such features. This is limited to the degree to which some of such features are incompatible with others, i.e., it is impossible for someone skilled in the art to construct a practical implementation combining such incompatible features. Finally, the description of "some embodiments" having feature A and "some embodiments" having feature B should be interpreted as explicitly indicating that the inventors also considered implementations combining features A and B (unless otherwise stated in the description or features A and B are substantially incompatible). This is true even if features A and B are described with reference to different drawings and / or in different paragraphs of the specification and / or with reference to different example embodiments or implementations.

[0264] Therefore, the appended claims and the hereinafter introduced claims are intended to be interpreted as including all such modifications, substitutions, additions, omissions, and sub-combinations that can be reasonably inferred. The scope of the claims should not be limited to the preferred embodiments set forth in the implementation, but should be given the broadest interpretation consistent with the entire specification.

Claims

1. A quantum information processing device, comprising: The semiconductor body is mainly composed of silicon; Multiple light-emitting defects are disposed within the semiconductor body, each of the light-emitting defects including a radiation damage center, wherein: Each of the plurality of luminescent defects includes at least one qubit having a corresponding plurality of quantum states, wherein pairs of quantum states in the plurality of quantum states of the qubit represent computational information; Each of the plurality of luminescent defects belongs to one of a plurality of groups, wherein the paired quantum states representing computational information are identical for different luminescent defects belonging to the same group among the plurality of groups, the paired quantum states representing computational information are different for different luminescent defects belonging to different groups among the plurality of groups, and the energy difference between the paired quantum states is different for luminescent defects belonging to different groups among the plurality of groups. The light-emitting defects in the plurality of light-emitting defects are spaced apart from each other in the semiconductor body to form an array or lattice. The plurality of light-emitting defects are arranged in the array or lattice such that adjacent light-emitting defects in the array or lattice belong to different groups within the plurality of groups, and pairs of light-emitting defects belonging to the same group are dispersed on the quantum information processing device; and The control system includes circuitry communicatively coupled to the semiconductor body and is configured by processor-executable instructions to initialize one or more of the plurality of light-emitting defects.

2. The apparatus according to claim 1, wherein: The quantum states of the quanta of the light-emitting defect include orbital states, and the orbital states include multiple valley-orbital states, wherein the semiconductor body splits at least one orbital state among the multiple orbital states into the multiple valley-orbital states; and The paired orbital states representing computational information include: The first calculation state includes the first valley-orbit state among the plurality of valley-orbit states, and The second calculation state includes the second valley-orbit state included in the plurality of valley-orbit states.

3. The apparatus according to claim 2, wherein: The plurality of valley-orbit states also include a plurality of spin-valley-orbit states, wherein electron spin or electron spin and nuclear spin split at least one valley-orbit state included in the plurality of valley-orbit states into the plurality of spin-valley-orbit states; The first calculation state also includes the first spin-valley-orbit state among the plurality of spin-valley-orbit states; and The second calculation state also includes the second spin-valley-orbit state among the plurality of spin-valley-orbit states.

4. The apparatus according to any one of claims 1 to 3, wherein, The control system includes an input subsystem comprising circuitry communicatively coupled to the semiconductor body and the plurality of light-emitting defects. The control system is configured by processor-executable instructions to operate the input subsystem to manipulate information in paired quantum states stored in computational information representing qubits of at least one of the plurality of light-emitting defects.

5. The apparatus according to any one of claims 1 to 3, wherein, The control system includes an input subsystem comprising circuitry communicatively coupled to the semiconductor body and the plurality of light-emitting defects, wherein the control system is configured by processor-executable instructions to operate the input subsystem to create a linear combination of states from paired quantum states representing computational information of a qubit of at least one of the plurality of light-emitting defects.

6. The apparatus according to any one of claims 1 to 3, wherein, The device includes a coupler communicatively coupled to a first luminescent defect and a second luminescent defect among the plurality of luminescent defects, wherein the control system is configured to control the coupler to operate the coupler to couple the first luminescent defect and the second luminescent defect among the plurality of luminescent defects.

7. The apparatus according to any one of claims 1 to 3, wherein, The control system includes a readout system coupled to the semiconductor body, wherein the control system is configured by processor-executable instructions to operate the readout system to read out the state of one or more of the plurality of light-emitting defects.

8. The apparatus according to any one of claims 1 to 3, wherein, The semiconductor body is mainly composed of natural silicon.

9. The apparatus according to any one of claims 1 to 3, wherein, The semiconductor body is mainly composed of purified silicon.

10. The apparatus according to any one of claims 1 to 3, wherein, The paired quantum states representing computational information in one group of the groups of said luminescent defects include orbital states having the same orbital energy eigenstates and differing from at least one of the following: electron spin state and nuclear spin state.

11. The apparatus according to any one of claims 1 to 3, comprising a communication channel optically and communicatively coupled to the plurality of light-emitting defects.

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