Systems, devices, articles, and methods that interact with information stored in bound exciton states associated with light emitting silicon defects

Abstract

Various systems, devices, articles, and methods related to one or more localized light emitting defects disposed within a semiconductor body comprising silicon. A respective defect included in the one or more defects supports a respective bound exciton. A respective pair of computational states is defined at the respective defect, and one of the pair of computational states includes a first configuration of the respective exciton. Information stored in the respective pair of computational states can be manipulated in accordance with various systems, devices, articles, and methods described herein.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Application No. 62 / 883598, filed August 6, 2019, entitled "SYSTEMS, DEVICES, ARTICLES, AND METHODS TO INTERACT WITH INFORMATION STORED IN BOUND-EXCITON STATES ASSOCIATED WITH LUMINESCENT SILICON DEFECTS," which is incorporated herein by reference for all purposes. For U.S. purposes, this application claims the benefit of U.S. Application No. 62 / 883598, filed August 6, 2019, entitled "SYSTEMS, DEVICES, ARTICLES, AND METHODS TO INTERACT WITH INFORMATION STORED IN BOUND-EXCITON STATES ASSOCIATED WITH LUMINESCENT SILICON DEFECTS," pursuant to 35 U.S. SC § 119, which is incorporated herein by reference for all purposes. Technical Field

[0003] This disclosure relates to quantum information processing operations for computational states, which include two or more local configuration states of defects in semiconductor materials (e.g., local light-emitting defects in silicon). Background Technology

[0004] Information is contained within the state of the physical system. The physical system can be a quantum system or a classical system. The system includes tangible devices, such as electronic components defined on or within one or more substrates. The physical system may include one or more photons that can interact with or otherwise communicatively couple with other physical components. Summary of the Invention

[0005] Other aspects and exemplary embodiments are shown in the accompanying drawings and / or described in the following description.

[0006] An information processing device includes a semiconductor body and one or more local light-emitting defects disposed within the semiconductor body, the semiconductor body comprising silicon. A corresponding local light-emitting defect included in the one or more local defects supports a corresponding bound exciton. The corresponding local light-emitting defect includes a first computational state and a second computational state. The first computational state includes a first configuration of the corresponding exciton. The device also includes a control system comprising circuitry communicatively coupled to the semiconductor body and manipulating the one or more local light-emitting defects in response to execution of processor-executable instructions.

[0007] A system including an information processing device comprising a semiconductor body primarily comprising silicon and one or more local light-emitting defects disposed within the semiconductor body. A corresponding local light-emitting defect included in the one or more local light-emitting defects supports a corresponding bound exciton. The corresponding local light-emitting defect includes a first computational state and a second computational state. The first computational state includes a first configuration of the corresponding exciton. The system further includes a control subsystem comprising a circuit system communicatively coupled to the semiconductor body and manipulating the one or more local light-emitting defects in response to the execution of processor-executable instructions. The system also includes at least one processor communicatively coupled to a control system and at least one tangible computer-readable storage device communicatively coupled to the at least one processor and storing the processor-executable instructions. When executed by the at least one processor, the processor causes the at least one processor to instruct the control subsystem to initialize the one or more local light-emitting defects to either the first computational state or the second computational state.

[0008] An information processor that is essentially as described and illustrated in this article.

[0009] A system that, as substantially as described and illustrated herein, includes at least one processor and a quantum information processor.

[0010] An operating method for an information processor, which is essentially as described and illustrated herein.

[0011] A method of operating a system that includes digital and analog computers, as basically described and illustrated herein.

[0012] A communication device that is essentially as described and illustrated herein.

[0013] A photon source that is essentially as described and illustrated in this article.

[0014] It should be emphasized that the present invention relates to all combinations of the above features, even if these are described in different claims. Attached Figure Description

[0015] The accompanying drawings illustrate non-limiting exemplary embodiments of the present invention.

[0016] Figure 1 This is a schematic diagram illustrating a part of a system including a processor-based device communicatively coupled to a special information processor.

[0017] Figure 2 This is a schematic diagram illustrating an example defect and the body of a semiconductor material.

[0018] Figure 3A It shows that it is aimed at and Figure 2 The example defect shown is associated with a graph of its ground state, excited state, and exciton state, plotted relative to a magnetic field.

[0019] Figure 3B It is shown that... Figure 2 The diagram illustrates the energy levels, configurations, and transitions associated with the defects shown.

[0020] Figure 4 It shows based on Figure 3A and Figure 3B The table shows the calculated states of the energy levels.

[0021] Figure 5 includes an illustration based on Figure 3A and Figure 3B The diagram shows the calculated states of the energy levels.

[0022] Figure 6 This is a block diagram schematically illustrating an example of a distributed system comprising one or more devices, each device including, for example... Figure 2 The semiconductor body shown is provided with one or more defects in the semiconductor body.

[0023] Figure 7 This is a schematic diagram showing the body of a semiconductor material, a pair of exemplary defects, and a coupler.

[0024] Figure 8 This is a schematic diagram illustrating the body of the semiconductor material, several exemplary defects, and various optical structures.

[0025] Figure 9 This is a schematic diagram illustrating the bulk of a semiconductor material and several exemplary defects with different computational states.

[0026] Figure 10 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes one or more initialization operations.

[0027] Figure 11 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes operations of one or more qubits.

[0028] Figure 12This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes one or more readout operations.

[0029] Figure 13 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes operations on one or more single qubits.

[0030] Figure 14 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor that includes one or more multi-qubit operations.

[0031] Figure 15 This is a flowchart illustrating an implementation of an example operation method of a quantum information processor, wherein the method includes transferring information from a ground state and / or an exciton state to a spin state or transferring information from a spin state to a ground state and / or an exciton state. Detailed Implementation

[0032] Specific details are set forth throughout the following description in order to provide a more thorough understanding of the invention. However, the invention may be practiced without these details. In other instances, well-known elements have not been shown or described in detail to avoid unnecessarily obscuring the invention. Therefore, the specification and drawings are to be considered illustrative rather than restrictive.

[0033] This document discloses systems, devices, articles, and methods with practical applications in information processing (e.g., computing, communication, quantum computing, and quantum communication). Information processing includes processing information stored in the physical state of a physical (e.g., tangible) system. Communication includes transferring information from one physical system to another via one or more signals describing the physical state of the physical system. Quantum information processing includes processing information using one or more quantum physical effects (e.g., superposition, coherence, decoherence, entanglement, nonlocality, and teleportation). Some implementations of this system, device, article, and method include or are characterized by two or more aspects of a quantum computer: well-defined qubits, reliable state preparation, low decoherence rate, precise quantum gate operation, multi-qubit operation, and quantum measurement. Systems, devices, articles, and methods with practical applications in quantum communication and quantum computing can interconvert states between stationary qubits (e.g., solid-state) and flying qubits (e.g., photons).

[0034] Some implementations of this system, apparatus, article, and method include or are characterized in that information is stored in or manipulated via an energy difference associated with the energy states of one or more localized light-emitting defects (e.g., radiation damage centers) in the bulk of a semiconductor material, such as silicon. Some implementations include or are characterized in that information is stored in or manipulated via exciton states. Some implementations include one or more bound exciton defects.

[0035] Figure 1 A processor-based system 100 is illustrated, comprising one or more dedicated devices for processing information. System 100 includes a digital computer 102, which includes a control subsystem 104. Control subsystem 104 includes at least one processor 105. Digital computer 102 includes at least one bus 106 coupled to control subsystem 104. System 100 also includes at least one non-transitory computer and processor-readable storage device 108, both communicatively coupled to bus 106, and a network interface subsystem 110. Digital computer 102 includes an operator input subsystem 112 and an output subsystem 114 communicatively coupled to bus 106. Digital computer 102 also includes an analog device interface (ADI) subsystem 116 coupled to bus 106. Bus 106 can communicatively couple two or more subsystems in computer 102. In some implementations, some subsystems of system 100 may be omitted or combined. Some subsystems of system 100 may be remotely accessed via network interface subsystem 110.

[0036] At least one processor 105 can be any logic processing unit, such as one or more digital processors, microprocessors, central processing units (CPUs), graphics processing units (GPUs), application-specific integrated circuits (ASICs), programmable gate arrays (PGAs), programmable logic units (PLUs), digital signal processors (DSPs), network processors (NPs), etc.

[0037] Network interface subsystem 110 includes a communication circuitry for supporting bidirectional communication of processor-readable data and processor-executable instructions. Network interface subsystem 110 can employ communication protocols (e.g., FTP, HTTPS, SSH, TCP / IP, SOAP plus XML) to communicate via network or non-network communication channels (not shown), such as the Internet, serial connections, parallel connections, etc. Wireless connections, fiber optic connections, and combinations thereof exchange processor-readable data and processor-executable instructions.

[0038] The operator input subsystem 112 includes one or more user interface devices, such as a keyboard, pointer, numeric keypad, touchscreen, or other interface devices for a user or human operator. In some implementations, the operator input subsystem 112 includes one or more sensors for the digital computer 102 or analog device 150. One or more sensors provide information characterizing or representing the environment or internal state of the digital computer 102 and / or analog device 150. Furthermore, the output subsystem 114 includes one or more user interface devices, such as a display, lights, speakers, and printer.

[0039] Storage device 108 includes at least one non-transitory or tangible storage device. Storage device 108 may include, for example, one or more volatile storage devices such as random access memory (RAM); and one or more non-volatile storage devices such as read-only memory (ROM). Storage device 108 may include solid-state memory, flash memory, magnetic hard disk, optical disk, solid-state drive (SSD), hard disk drive (HDD), network drive, other forms of computer and processor-readable storage media or combinations thereof. Those skilled in the art will understand that storage device 108 can be implemented in various ways, such as non-volatile storage devices, volatile storage devices, and / or combinations thereof. Furthermore, computer systems may incorporate volatile and non-volatile storage devices, such as caches, solid-state drives, databases in memory, etc.

[0040] Storage device 108 includes or stores processor-executable instructions and / or processor-readable data 120 associated with the operation of system 100. Executing the processor-executable instructions 120 and optionally reading the processor-readable data 120 causes at least one processor 105 and / or control subsystem 104 to perform various methods and actions, or causes various methods and actions to be performed by system 100, digital computer 102, other systems or devices, or combinations thereof. For example, via network interface subsystem 110 or ADI subsystem 116. The processor-executable instructions and / or processor-readable data 120 may, for example, include a basic input / output system (BIOS) (not shown), operating system 122, peripheral drives (not shown), server instructions 124, application instructions 126, calibration instructions 128, special information processor control instructions 130, environment instructions 132, and data 134. A portion of storage device 108 or the processor-executable instructions and / or processor-readable data 120 may be included in an article of manufacture that includes a non-transitory processor-readable storage device.

[0041] Exemplary operating system 122 includes, for example and Operating system. Server instructions 124 include processor-executable instructions and / or processor-readable data for interacting with processor-based devices outside system 100 across a network via network interface subsystem 110. In some implementations, processor-executable server instructions 124 include processor-executable instructions and / or processor-readable data that, when executed by a processor, schedule jobs for digital computer 102 or analog device 150. Application instructions 126 include processor-executable instructions that, when executed, cause system 100 to perform one or more actions associated with an application, such as performing computations on digital computer 102 or analog device 150.

[0042] Calibration instruction 128 includes processor-executable instructions that, when executed by a processor (e.g., processor 105), cause the processor to calibrate against analog device 150 and store calibrated values. Operating parameters of components included in or on analog device 150 may exhibit inter-component variations. These variations may change over time or differ from expected or ideal component parameters. Calibration instruction 128, when executed by the processor, allows for the testing and correction of these inter-component variations, time variations, and / or differences from expected or ideal component parameters.

[0043] Special information processor control instructions 130 include processor-executable instructions that, when executed by a processor (e.g., processor 105), cause the processor to control, initialize, write, manipulate, read, and / or otherwise transmit data to / from analog device 150. Special information processor control instructions 130 partially implement the methods described herein (e.g., refer to...). Figures 10 to 15 And / or utilize the control subsystem included in the analog device 150.

[0044] Environmental instructions 132 include processor-executable instructions and / or processor-readable data that, when executed by a processor (e.g., processor 105), cause the processor to partially or fully control and monitor aspects of a prescribed and potentially dedicated environment for the analog device 150. Examples of environmental instructions 132 include instructions that, when executed, monitor and control the temperature and magnetic fields affecting the special information processor 154. Environmental instructions 132 may create a thermal distribution (e.g., some or all of the temperature values ​​of the analog device 150 having a time or space dependency). Environmental instructions 132 partially implement the methods described herein, including... Figure 10 The sum and Figure 10 Those related methods.

[0045] Data 134 may include processor-readable information or data used, obtained, created, or updated through the operation of system 100. For example, one or more logs from digital computer 102 and analog device 150. Data 134 may include processor-readable data including parameters for the operation of system 100. Data 134 may include processor-readable data associated with (e.g., created, referenced, or modified by) a processor executing processor-executable instructions (e.g., server instructions 124, application instructions 126, calibration instructions 128, special information processor control instructions 130, and environment instructions 132). Data 134 may include processor-readable data corresponding to energy states (e.g., local degrees of freedom) or transitions (e.g., energy differences) associated with luminescent defects. This document at least... Figure 8 An example of such data is shown in the figure.

[0046] Analog Device Interface (ADI) subsystem 116 includes a communication circuitry system supporting bidirectional communication between digital computer 102 and analog device 150. In some implementations, the inputs or outputs from analog device 150 are digital, and the intermediate states within the analog computer are analog. In some implementations, ADI subsystem 116 interacts with environment subsystem 152 of analog device 150. In some implementations, ADI subsystem 116 interacts with special information processor 154 through one or more subsystems of analog device 150 (e.g., subsystems 156 and 158). In various implementations, the ADI subsystem 116 may include a waveform digitizer (e.g., an ALAZARTECH ATS9440, a 4-channel 14-bit 125 MS / s card, or an ALAZARTECH ATS9360, a 1-channel 12-bit 1.8 GS / s PCI card, from Alazar Technologies, Pointe-Claire, QC, CA, Canada), and an infrared photon detector (e.g., a SINGLE QUANTUM EOS multi-channel SNSPD photon detector from Single Quantum, Delft, ZH, NL, or an ID230 NIR photon detector from ID Quantique SA, Carouge, GE, CH). This document at least in Figure 2 Other detectors are described in the document.

[0047] The simulation device 150 includes an environmental subsystem 152 that provides a prescribed environment for a specific information processor 154 in response to the execution of environmental command 132. Aspects of the prescribed environment may include one or more of, for example, humidity, air pressure, vibration, magnetic field, temperature, and electromagnetic field. In some implementations, the environmental subsystem 152 provides a low magnetic field around the specific information processor 154. In some implementations, the environmental subsystem 152 provides a time-invariant magnetic field around the information processor 154. In some implementations, the environmental subsystem 152 provides a time-varying or pulsed magnetic field. In some implementations, the environmental subsystem 152 maintains the information processor 154 at a low temperature through one or more cooling units and / or cold sources. For example, the information processor 154 may be maintained near 4K. Other useful temperatures for the information processor 154 include temperatures in the range from about 1 mK to about 77 K. In some implementations, the environmental subsystem 152 maintains the processor 154 in the range from about 1.5 K to about 4 K. In some implementations, the environmental subsystem 152 maintains the environment surrounding the information processor 154 at a temperature of approximately 290 K. In some implementations, the environmental subsystem 152 includes vibration isolation components, such as dampers in a cooling unit. In some implementations, the environmental subsystem 152 provides a low-humidity and constant-pressure (e.g., stable vacuum) environment to the specific information processor 154.

[0048] The special information processor 154 can be a quantum device. A quantum device is a fabrication or structure in which quantum mechanical effects are significant and / or dominant. Quantum devices (such as superconducting circuits and spintronic circuits) include circuits in which current transport is governed by quantum mechanisms. Superconducting circuits utilize quantum physical phenomena such as tunneling and flux quantization. Spintronic circuits utilize the physical property of spin (such as electron spin) as a resource for receiving, processing, storing, transmitting, or outputting information. Quantum devices can be used in measuring instruments, etc., within computing devices. Examples of computing devices include components of classical and quantum computers.

[0049] Information processor 154 can be a quantum information processor comprising one or more qubits or quantum quaternions, collectively referred to as qubits. A qubit is the logical building block of a quantum computer, equivalent to a binary digit in a classical digital computer. A qubit is typically a defined physical system having two or more discrete states called computational states. Computational states (examples of which are described herein) are analogous to binary states (i.e., 0 and 1) and can be labeled as |0> and |1>. In some implementations, these states are eigenstates of the sigma-Z operator (Pauli matrix operator) of the Hamiltonian of the physical system. Such qubits are said to be in a Z-diagonal basis, and other bases can be used without loss of generality. A qubit can be in a superposition or linear combination of states, e.g., α|0> + β|1>. The coefficients α and β can be complex numbers, and the sum of their moduli is 1. One or more logical operations can be performed on one or more qubits. These operations can occur at a specified time (e.g., at a designated time) or at a certain frequency within a specified time period. In some implementations, the information processor 154 includes one or more quantum quaternions (generalizations of qubits), which include three or more computational states such as |0>, |1>, |2> and may also include other states up to the dimensions of the quantum quaternion. In some implementations, the information processor 154 includes one or more quantum ternaries, i.e., ternary versions of qubits. Those skilled in the art will understand that a qubit can be used as a metaphor for a genus of "quantum quaternions".

[0050] In some implementations, the information processor 154 includes one or more components, devices, or subsystems for performing one or more types of single-qubit operations on one or more qubits. Examples of single-qubit operations include sigma-X or bit-flip operations, equivalent to classical NOT gates. A sigma-X operation affects the rotation of a quantum state, modeled as a Bloch sphere, about the X-axis. When the rotation is π radians, the state |0> is mapped to |1> and vice versa, i.e., a full bit flip.

[0051] Some examples of the information processor 154 perform sigma-Y operations on one or more qubits. sigma-Y operations have no classical binary counterpart. A sigma-Y operation affects the rotation of a Bloch sphere about the Y-axis. If the rotation is in π radians, the operation maps state |0> to i|1> and state |1> to -i|0>. sigma-Y operations are sometimes called Pauli-Y operations or gates.

[0052] The information processor 154 can perform sigma-Z or phase operations on one or more qubits. The sigma-Z operation has no classical counterpart. The sigma-Z operation affects the rotation of the Bloch sphere about the Z-axis. If the rotation is in π radians, the operation maps |0> to |0> and |1> to -|1>. The sigma-Z operation is sometimes called a phase-flipping operation or a gate. This document refers at least to... Figure 13 Examples illustrating the implementation of sigma-X, sigma-Y, and sigma-Z operations are provided.

[0053] In some implementations, the information processor 154 includes one or more couplers that can couple qubits. This is a two-qubit operation, which can be a selective operation. The two-qubit operation can be performed on a first qubit and a second qubit. An example two-qubit operation is a CNOT gate, where two qubits are used as inputs, and the output state of the first qubit is the NOT of the input state of the first qubit, conditioned on the state of the input state of the second qubit. A second example two-qubit operation is a CPHASE gate, where two qubits are used as inputs, and the output state is determined by a phase factor if both input qubits are in state |11>. The other three inputs (|00>, |01>, and |10>) remain unaffected. A third example of a two-qubit operation is the Ising operation, or sigma-Z operation.

[0054] In information processor 154, qubits can be communicatively coupled to each other through multiple structures and devices. In some implementations, multi-qubit interaction is mediated by, for example, a single coupler included in information processor 154. In some implementations, multi-qubit interaction can be achieved through direct resonant coupling of the involved structures and devices without the need for couplers. For example, two qubits in resonance or near resonance are driven to achieve direct resonant interaction. Information processor 154 can achieve multi-qubit interaction by executing processor-executable instructions and, in response to such execution, causing two or more qubits to resonate or nearly resonate with each other, for example, two or more qubits are adjacent and interact at the same frequency. In some implementations, multi-qubit interaction is mediated by multiple couplers. Information processor 154 includes one or more optical structures as couplers. Information processor 154 may include one or more optical resonators and / or one or more waveguides as couplers. This document refers at least to Figure 14 Examples of implementations of multi-qubit operations are described. In some implementations, the information processor 154 includes one or more qubits without associated couplers.

[0055] Analog device 150 includes a control subsystem 155. The control subsystem may include an input system 156, an output system 158, or both. A special information processor input subsystem 156, in response to processor-executable instructions, writes to or manipulates information stored in an information processor 154. The input subsystem 156 may be formed on the same substrate as the information processor 154, physically coupled to the information processor 154, communicatively coupled to the information processor 154, or a combination of the foregoing. In some implementations, the input subsystem 156 includes a digital-to-analog converter. The input subsystem 156 may include one or more of an optical input subsystem, an electric field subsystem, a magnetic manipulation subsystem, a mechanical subsystem, a cryogenic subsystem, associated or included components, etc. This document refers at least to... Figure 2 An example of a subsystem is described.

[0056] Input subsystem 156 can encode processor-readable information, including classical and quantum information, and transmit that information to information processor 154. Input subsystem 156 may include a light source for applying narrow-spectrum or broad-spectrum light (e.g., pulsed light) to a specific portion of information processor 154. In some implementations, input subsystem 156 includes an electromagnet for providing a magnetic field to part or all of information processor 154. In some implementations, input subsystem 156 includes one or more transmitters (e.g., wires, antennas, coils) to selectively provide information processor 154 with control pulses for one or more times, durations, and frequencies. An example of a pulse generator is the PSPL10070A, available from Tektronix Corporation, Beaverton, Oregon, USA. TM Generator. In some implementations, the transmitter is on the information processor 154. In some implementations, the transmitter is located close to and coupled to components or devices on the information processor 154. Microwave, radio frequency (RF), and / or electromagnetic control pulses can be used. In some implementations, the input subsystem 156, together with the control subsystem 104, is used to perform electron paramagnetic resonance (EPR) and / or nuclear magnetic resonance (NMR) on electrons and / or nuclear spins in the input subsystem 156. In some implementations, a bulk EPR or NMR cavity surrounds the information processor 154.

[0057] In some implementations, the input subsystem 156 includes wires electrically (e.g., current-grounded) coupled to one or more electrodes or electrode pairs included in the information processor 154. In some implementations, the input subsystem 156 applies DC and AC currents to electrically bias and control the information processor 154 from the input subsystem 156. For example, the input subsystem 156 can inject or remove charge carriers (e.g., electrons and holes) from one or more portions of the information processor 154. Alternatively, in some examples, the input subsystem 156 provides a static or oscillating electric or magnetic field. The DC current and voltage can be provided by a low-noise power supply, such as a battery-powered voltage source. The current and voltage can be applied via a resistive voltage divider / combiner. Any waveform generator or signal generator can be used, such as the TELEDYNE LECROY ARBSTUDIO 1104 available from Teledyne Technologies, Inc., Thousand Oaks, CA, US. TM A waveform generator applies AC current and voltage to a portion of the information processor 154. A signal generator, such as the KEYSIGHT E8267D, can be used. TM A microwave vector signal generator applies AC current and voltage for electron spin resonance (ESR) to a portion of the information processor 154. NMR control can be used, and the NMR control includes operation via a vector signal generator such as the KEYSIGHT MXG N5182A RF. TM The vector signal generator produces the signal. Both signal generators are available from Keysight Technologies in Santa Clara, CA, US. Lines leading to and / or entering the information processor 154 (including, for example...) Figure 1 The lines shown may include filters, such as low-pass filters, band-pass filters, and high-pass filters.

[0058] Figure 1The analog device 150 shown includes a special information processor output subsystem 158 for reading from at least the information processor 154. The output subsystem 158 may be formed on the same substrate as the information processor 154, physically coupled to the information processor 154, communicatively coupled to the information processor 154, or a combination of the foregoing. In some implementations, the output subsystem 158 includes one or more analog-to-digital converters, amplifiers, filters, etc. In some implementations, the output subsystem 158 includes one or more optical readout devices. The optical readout device (e.g., a photodetector) detects photons generated by or within the information processor 154, or measures the state of an optical structure included on or within the information processor 154. Optical structures, such as resonators, support one or more photon modes. Examples of optical structures are described herein. In some implementations, the optical readout device distinguishes the presence and absence of one or more photons in an optical resonator. In some examples, the optical readout device detects the frequency shift of one or more photon modes of an optical structure. An optical readout device can read the states of one or more optical resonators. The states of the optical structure can depend on the occupancy of specific states of light-emitting defects, such as those coupled to the optical structure. Examples of light-emitting defects are described herein. In some implementations, the output subsystem 158 includes one or more photodetectors, such as the SINGLE QUANTUM EOS multichannel SNSPD photodetector from Single Quantum, Delft, NL, or the ID230 NIR photodetector from IDQuantique SA, Carouge, GE, CH.

[0059] In some implementations, the output subsystem 158 includes one or more photodetectors, such as the APD110C or PDA20CS2 InGaAs Avalanche photodetectors available from Thorlabs Canada ULC, Saint-Laurence, QC, CA; on-chip superconducting photodetectors described in Akhlaghi et al., 2015 Nature Communications 6:8233; various detectors described in Eisaman et al., 2011 Rev. Sci. Instrum. 82, 071101; or the ADN3010-11 detector from Analog Devices, Norwood, MA, US.

[0060] In some implementations, the digital computer 102 uses an output subsystem 158 to perform logical operations on information in the information processor 154. For example, the output subsystem 158 can be used to perform measurements on quantum states stored in or on the information processor 154.

[0061] Multi-qubit measurement involves observing the collective, group, or aggregate properties of multiple qubits (e.g., multiple qubits defined in information processor 154). Processor 105 and / or control subsystem 104 can perform numerous methods in information processing, many of which include multi-qubit measurement readouts of the aggregate properties of multiple qubits. These methods include quantum error correction (e.g., surface coding), quantum phase estimation, multi-qubit manipulation, and entanglement generation. The aggregate properties of multiple qubits can include parity checks of the qubits. Here, even checks include balanced states, such as two computational states of equal number, and odd checks include unbalanced states, such as odd numbers. Odd checks typically imply an error complication similar to a classical error detection code based on the repetition of redundant information. For example, in a Z-basis with four qubits, the following states are even: |0000>, |0011>, |0110>, etc. However, in the X basis where |+>=(|0>+|1>) / √2 and |->=(|0>-|1>) / √2, even parity states include |---->, |++-->, |-++->, etc. Other parity states can be defined for other bases and / or for other aggregation properties of multiple qubits. This paper at least refers to... Figure 10 and Figure 12 An example of parity measurement is described.

[0062] In some implementations, the output subsystem 158 performs a single read of the state of the components in the information processor 154. In some implementations, the output subsystem 158 performs a read of the state of the components in the information processor 154 at a gigahertz speed.

[0063] In some implementations, the quantum output subsystem 158 receives (e.g., receives, requests, and receives) a quantum nondestructive measurement readout of the state of a component in the information processor 154. In some implementations, the quantum output subsystem 158 performs a readout of the state of one or more auxiliary photons that have interacted with at least one component in the information processor 154.

[0064] In some implementations, analog device 150 is communicatively coupled to communication channel 170, such as a quantum information channel. Channel 170 can be used to send information (e.g., quantum information, classical information) to and from information processor 154. Channel 170 can communicatively couple information processor 154 to one or more information processors, such as a second instance of information processor 154. Channel 170 can also communicatively couple information processor 154 to another device, such as a photon generator.

[0065] In some implementations, a portion of the digital computer 102 and a portion of the analog device 150 are omitted to create a smaller information processing device including an information processor 154 and a channel 170. In some implementations, a portion of the digital computer 102 or a portion of the analog device 150 is a communication device.

[0066] Figure 2 This is a schematic diagram showing a portion of device 200. The shown portion of device 200 includes a substrate of semiconductor material, a body of semiconductor material or semiconductor material 202, and an exemplary defect 204 disposed (e.g., created, formed, implanted, positioned, placed, or disposed) within semiconductor material 202. Device 200 can operate as an information processor such as a quantum information processor, an optical processor, an optical device, and a communication device.

[0067] In some implementations, semiconductor material 202 includes silicon. Semiconductor material 202 may include native silicon. Semiconductor material 202 may include other substances, such as silicon carbide or silicon germanium. In some implementations, semiconductor material 202 includes purified paramagnetic silicon or so-called silicon vacuum. One way to increase the performance metrics of a physical system (e.g., a longer coherence time for a system such as device 200) is to use semiconductor materials that have been treated to remove most of the nonparamagnetic isotopes (e.g., silicon-29) that broaden spectral measurements. Enriched or purified silicon has been treated to remove some to almost all non-zero spin isotopes, such as silicon-29. Purified silicon includes materials rich in various levels of silicon-28 (e.g., 99%, 99.9%, and 99.99%). Purified silicon includes materials rich in silicon-28. Purified silicon includes silicon with spectral linewidths at least ten to one hundred times sharper than native silicon. These defects show examples of linewidth narrowing of approximately 50 (W-center) and 200 (G-center) times in purified silicon.

[0068] Semiconductor bodies primarily comprising purified silicon can be manufactured or purchased. Manufacturing techniques involve using purified silicon compounds (e.g., by isotope, by magnetic properties) as input materials, produced through enrichment methods such as gas centrifugation (e.g., silicon tetrafluoride), magnetic mass separation, or ion exchange. The purified gaseous silicon compound can be part of the purification or manufacturing process. Such compounds include purified silicon tetrafluoride (SiF4) or purified silane (SiH4). Among other methods, molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) can be used to create bodies, crystals, substrates, and wafers comprising purified silicon. Available isotope-purified silicon includes removing silicon-29 to levels of tens, hundreds, thousands, or tens of thousands of parts per million. Suitable semiconductor material 202 can be purchased from Isoflex USA, an isotope supply company located in San Francisco, California, USA.

[0069] In some implementations, semiconductor material 202 is an epitaxial layer of isotopically purified silicon grown on top of a natural silicon wafer. The thickness of semiconductor material 202 can be on the order of micrometers, while the thickness of the natural silicon wafer can be on the order of millimeters. In some implementations, semiconductor material 202 is a thin silicon layer grown or deposited on top of a body of an insulating material, including silicon oxide, sapphire, silicon nitride, etc. Here, silicon can refer to natural silicon, purified silicon, or silicon alloys such as silicon-germanium mixtures, the components of which can be isotopically purified.

[0070] Defect 204 is disposed within the body of semiconductor material 202. The body of semiconductor material 202 is defined by multiple interfaces (e.g., faces, sides, or edges). In some implementations, defect 204 is disposed deep or far within the body or mass of semiconductor material 202. In at least one implementation, defect 204 is disposed at or near a shallow interface, for example, at a distance equal to or less than 10 nanometers from one of the multiple interfaces. In some implementations, defect 204 is disposed at a distance greater than 10 nanometers from one of the multiple interfaces. In some implementations, defect 204 is transiently coupled to an optical structure (e.g., a resonator, waveguide, lens). Figure 2(Not shown in the diagram). In some implementations, defect 204 is located at a distance greater than 10 nanometers from each of the multiple interfaces. In some implementations, defect 204 is located at a distance greater than 30 nanometers from each of the multiple interfaces. In some implementations, defect 204 is located at a distance of 30 nanometers to 500 nanometers from the interfaces of the multiple interfaces. In some implementations, defect 204 is located at a distance of 10 nanometers to 2 micrometers from the interface of semiconductor material 202. Defect 204 may be located at a distance of 30 nanometers to 1 micrometer from each interface. Another defect 204 enters the body 202, and another defect 204 is located away from the charge that may reside on the interface of the body of semiconductor material 202. Defect 204 and similar multiple defects may be formed by one or more atoms or atomic vacancies (e.g., omitted silicon atoms), and these atoms partially occupy one or more reproducible specific relative positions relative to each other and relative to the crystal structure of semiconductor material 202. The crystalline pattern of silicon atoms allows for a number of different equivalent orientations of a type of defect relative to the lattice, defined by its chemical composition and configuration; however, these different orientations still attributed to the same defect type. The type of defect and the implantation method vary depending on the implementation. Ion implantation, an industry-standard silicon technology, can be used to controllably implant the constituent components of luminescent defects 204 into semiconductor material 202. One such implantation process is described in U.S. Patent No. 3,434,894.

[0071] In some implementations, device 200 includes a defect 204 disposed within semiconductor material 202. Defect 204 can be a point defect, a localized defect, or a localized defect in the semiconductor material 202, such as a silicon lattice. Localization can refer to a defect whose atomic composition or configuration differs from that of a pure semiconductor at a distance less than 5, 3, or 2 unit cell lengths, where the lattice constant of the undamaged lattice defines the cell length. For example, at least one interstitial silicon atom and / or at least one vacancy (without silicon atoms) can define a defect. A defect can cause deformation (e.g., strain) in adjacent cells beyond the size of the defect. The defect can support electron, hole, and / or exciton wavefunctions that extend beyond the defect size defined by its atomic composition or configuration.

[0072] In some implementations, defect 204 is a substitutional defect, where the lattice site in semiconductor material 202 contains an atom different from the atom found in adjacent lattice sites. Defect 204 can be a vacancy; an empty lattice site in the crystal to be occupied. In some implementations, defect 204 is an interstitial defect where an atom occupies a non-lattice site. Defect 204 can be a Frenkel defect, where an atom moves to an interstitial site and creates a vacancy. That is, a combination of interstitial and vacancy defects. Here, the atom includes at least one atom, ion, or molecule, but the defect remains localized.

[0073] Defect 204 or more defects 204 can be damage centers, such as radiation damage centers. Defect 204 in semiconductor material 202 can be constructed using one of a variety of methods. One class of methods involves applying radiation to semiconductor material 202. In some implementations, applying an electron beam to semiconductor material 202 produces defect 204. After applying radiation, semiconductor material 202 can be annealed at a specified temperature. For example, treating silicon bulk with an electron beam and annealing at around 100°C produces G centers. The temperature varies depending on the defect; for example, the process for creating T centers can include annealing at 450°C. Defect 204 can be formed by implanting carbon into semiconductor material 202. In some implementations, defect 204 is constructed by implanting electrons, neutrons, protons, or silicon or other atoms into semiconductor material 202 that has been pre-contaminated with carbon. Semiconductor material 202 can be a wafer comprising silicon. The wafer can be a silicon-on-insulator wafer, such as a 220 nm thick wafer covered with a silicon dioxide insulator. The silicon can be intrinsic silicon doped with alternative donors or acceptors. The wafer is subjected to a carbon ion beam with a beam energy between 5 keV and 100 keV (e.g., 20 keV, 30 keV, 40 keV). The wafer can be treated with other carbon ions, either the same or different (e.g., lower energies). Optionally, the semiconductor material 202 can be annealed to repair damage during ion implantation. For example, the semiconductor material 202 can be heated to high temperatures (e.g., approaching or exceeding 1,000°C) on a timescale of seconds to minutes using a furnace, heater, lamp, or laser. The semiconductor material 202 is then slowly cooled to prevent the effects of thermal shock (e.g., breakage). Rapid thermal annealing (RTA) and rapid thermal processing (RTP) in semiconductor manufacturing are applicable. Protons can be implanted into the semiconductor material 202 with beams two orders of magnitude higher than carbon ions, such as 2 MeV.

[0074] In some implementations, defect 204 is a “luminescent defect,” which can also be labeled “luminescent impurity,” “luminescent acceptor,” or “luminescent donor” in the appropriate context. A luminescent defect comprises a pair of energy states, wherein the decay process from the first state of the first pair of energy states to the second state of the first pair of energy states has a sufficiently characteristic probability (e.g., 0.1%) to generate at least one optical photon. The characteristic probability of emitting at least one optical photon is the likelihood of emitting an optical photon from defect 204 when defect 204 is located within the bulk of the unstrained semiconductor body 202. The probability of emitting an optical photon from defect 204 when defect 204 is not in a bulk unstrained semiconductor environment can be significantly different from the characteristic optical photon emission probability obtained through effects that can influence the local density of states, such as the Purcell effect. Optical photons are photons with wavelengths in the ultraviolet (UV), visible (VIS), or infrared (IR) bands, i.e., wavelengths between approximately 10 nm and 100 μm.

[0075] Defects can have multiple energy states that do not share the same number of electrons, holes, excitons, local vibrational excitations, etc.

[0076] Defect 204 can support bound exciton transitions defined by a first pair of energy states, wherein the first state and the second state in the first pair of energy states differ in the number of excitons present in their respective energy states.

[0077] Defect 204 has a pair of energy states, wherein the decay process from the first state in the first pair to the second state in the first pair has a sufficient photon generation probability to produce an optical photon without phonons (e.g., quantized quasiparticles of vibrational energy). The transition energy of the optical photon is called the zero-phonon line (ZPL) transition energy.

[0078] Defect 204 can be of a type defined by its chemical composition and configuration and / or by physical properties such as characteristic optical photon energies (e.g., ZPL transition energies). The characteristic optical photon energies and typical photon generation probabilities of a defect can be modified by the constituent atomic isotopes of the luminescent defect and / or the environment, including but not limited to temperature, strain, pressure, electromagnetic fields, etc. It will be clear to those skilled in the art that the characteristic transition energies and / or photon generation probabilities of a type of luminescent defect modified by the environment and / or the isotopic composition of the luminescent defect do not constitute a different type of luminescent defect. Optical transitions may be affected by the splitting described herein.

[0079] Device 200 can store or manipulate information in one or more exciton states. An exciton is a quasi-particle comprising an electron and a hole. Energy applied to device 200 raises electrons to an excited state and is electrostatically attracted to holes—unfilled vacancies in semiconductor material 202. Electron-hole pairs can (re)combine to emit photons. Low-energy excitons are attracted to defects such as defect 202 and may therefore move or be bound to a point, such as a localized defect 202. A defect 202 with bound excitons can be called a bound exciton defect. Defect 202 can include bound excitons or exhibit bound exciton transitions. The states of defect 202 can include a neutral ground state and a charged ground state. For defects with bound electrons, the first exciton state includes electrons, and for defects with excitons, the first exciton state includes additional electrons and holes. Electrons can pair. For defects with a neutral ground state, the first exciton state includes excitons, electrons, and holes. Examples of localized defects with a neutral ground state include C centers and P centers. This article uses the case of a charged ground state with an additional electron as a running example.

[0080] Defect 202 can be called a bound exciton luminescence defect when it includes luminescence transitions and bound excitons. Among the multiple energy states possessed by a bound exciton luminescence defect, there exists at least one pair of luminescent energy states and at least one pair of states with different numbers of excitons, and the energy states used to define luminescence transitions and bound exciton transitions can be partially or completely different.

[0081] In some implementations, device 200 includes one or more bound exciton defects. Device 200 stores or manipulates information stored at, for example, a bound exciton defect 204 via exciton states. In some implementations, a qubit is defined at defect 204, and at least one computational state of that qubit is an exciton state. In some implementations, the qubit defined at defect 204 includes a pair of computational states defining a bound exciton transition. One or both computational states in the pair can be exciton states.

[0082] In some implementations, for at least one energy state constituting part of a bound exciton and / or luminescent transition, device 200 includes one or more bound exciton luminescent defects possessing additional degrees of freedom, such as unpaired electron spin, non-zero nuclear spin, unpaired hole spin, multiple possible charge states, exciton number, etc. In some implementations, these additional degrees of freedom are used to define the computational state of at least one qubit. See at least the references Figure 4 Example of the description.

[0083] Examples of localized luminescent defects of bound excitons include so-called C centers, F centers, G centers, I3 centers, P centers, W centers, X centers, etc., which include equivalent or isoelectronic substitutes or replacements. Examples of bound exciton luminescent centers include so-called T centers, Ga1 centers, and Al1 centers, etc. Examples of bound exciton luminescent centers include so-called I centers, M centers, and NC centers, etc. Each center listed can be labeled with a short or long identifier, such as "T" or "T center".

[0084] For clarity, known aspects of these centers will be described before returning to the description of the use of bound excitons at these centers. C centers are thought to contain both carbon and oxygen, and are known in the so-called L-band (1565 nm–1625 nm) at 1570 nm (0.789 eV, 6364 cm⁻¹). -1 ZPL emission is present near 1304nm. The L-band is one of five designated telecommunications bands covering 1260nm to 1625nm, where the fiber has low loss. The F-center is at 1304nm (0.9508eV, 7668cm). -1 It emits light near the O band. The G center is at 1280 nm (0.969 eV, 7823 cm⁻¹). -1 It emits light near the O-band. The center of I3 is at 1041 nm (1.041 eV, 8396 cm⁻¹) in the near-infrared. -1 ZPL emission is observed near the 1616 nm (0.767 eV, 6186 cm⁻¹). The P-center is located at 1616 nm (0.767 eV, 6186 cm⁻¹). -1 It emits light near the L-band. The W-center is at 1218 nm (1.018 eV, 8210 cm⁻¹). -1 Characteristic emission is observed in the near-infrared region. The X-ray center is located at 1088 nm (1.14 eV, 9195 cm⁻¹). -1 The area near the ) exhibits a characteristic ZPL transition.

[0085] The T-center is believed to consist of two carbon atoms and one hydrogen atom, and has a voltage of approximately 935.1 meV (7542.0 cm⁻¹). -1 The characteristic ZPL optical transition energy of Ga1 defects at 1416 nm (875 meV, 7057.4 cm⁻¹) is shown. -1 Al1 (aluminum-) defects exhibit luminescence near the E-band. At 1483 nm (836 meV, 6742.8 cm⁻¹), the light emission is observed. -1 It emits light near the S-band and is believed to have a chemical composition and configuration similar to the T-center, but is characterized by its specified properties.

[0086] The I center is at 1285nm (0.965eV, 7783cm). -1The M-centers exhibit ZPL transitions near the O-band. The M-centers comprise localized defects in the silicon lattice (761 meV, near-infrared). Five NC-centers (also known as lines N1, N2, N3, N4, and N5) possess characteristic ZPL transition energies close to 746 meV, and each center is considered to have a distinct chemical and / or structural configuration. Further examples of defects with optical transitions are included in Gordon Davies, 1989 Physics Reports 176:83–188.

[0087] The species and genera of defects described herein have one or more equivalents known to those skilled in the art. These equivalents include equivalent or isoelectronic substitutes or replacements included in one or more atoms of the defect. Isoelectronic replacements have the same number of valence electrons and include elements from the same period; for example, germanium may replace carbon in a defect, or lithium may replace hydrogen. Isoelectronic replacements include charged atoms from adjacent periods. Isoelectronic replacements affect the mechanical and electronic structure of the defect, and the replacements can be used to alter vibrational or optical interactions with the defect. Optical transitions may be affected by the splitting described herein.

[0088] In some implementations, device 200 includes acceptor defects or acceptor sites within semiconductor material 202 to receive electrons. A suitable defect for acceptor sites is boron. Acceptors may include acceptors from Group III (13), such as boron, aluminum, gallium, and indium. In some implementations, device 200 includes donor defect sites within silicon material to donate electrons. A suitable defect for donor sites is phosphorus. Donors may include donors from Group V (15), such as phosphorus, arsenic, bismuth, and antimony.

[0089] Device 200 may include optical structures (not shown). Optical structures may include resonators, optical resonators, waveguides, optical couplers, optical cavities, and other arrangements of refractive and reflective materials. In some implementations, defect 204 is transiently coupled to one or more optical structures.

[0090] Device 200 may include an optical input subsystem comprising one or more optical components, such as light source 206. The optical components are operable, for example, in response to the execution of processor-executable instructions, to selectively apply light to defect 204. Light source 206 may apply light in a pulsed manner. The optical components may apply light to defect 204 at least at a first frequency. The first frequency corresponds to the energy difference between a pair of computed states of defect 204 (e.g., near the energy difference, at the energy difference). Light source 206 may be communicatively coupled to processor 105 in system 100 and operate in response to processor 105 executing processor-executable instructions. The optical input components (e.g., light source 206) may be disposed in, on, near, or away from semiconductor material 202. This selection is largely for illustrative purposes. Figure 2 The relative positions and orientations of the components shown are such that, for example, the light from the light source 206 does not need to be collinear with the magnetic field or perpendicular to the electric field.

[0091] Device 200 may include one or more electric field subsystems, each including electrical components such as electrode 208. The electric field subsystems may operate, for example, in response to the execution of processor-executable instructions, to apply an electric field of at least a first strength to the semiconductor material 202 or the defect 204. The electric field may include a gradient. That is, the electric field subsystems may be operable to selectively alter the electric field incident on the semiconductor 202. The electric field subsystems achieve changes in the energy eigenstates of the defect 204. The electric field subsystems may power components on or near the semiconductor material 202. The electric field subsystems may apply pulsed electrical manipulation to the defect 204.

[0092] Device 200 may include one or more magnetic manipulation subsystems, each including one or more magnetic input components, such as coil 210. The magnetic manipulation subsystems can realize changes in the energy eigenstates of defect 204. The magnetic input components are operable to selectively apply magnetic fields to semiconductor material 202 and / or defects 204 disposed within semiconductor material 202. The magnetic field may be oriented relative to a lattice orientation in semiconductor material 202 or to multiple defects such as defect 204. The magnetic field may be static or vary relative to time or position in semiconductor material 202. In some implementations, the magnetic input components include large-aperture superconducting magnets. Processor 105 in system 100 may instruct coil 210 to apply a magnetic field to semiconductor material 202 in response to executing processor-executable instructions.

[0093] The magnetic manipulation subsystem included in device 200 may include at least one radio frequency (RF) input component, such as antenna 212, a pair of antennas, etc., which is selectively operable to apply RF pulses to semiconductor material 202 and / or defect 204. Processor 105 may instruct the magnetic manipulation subsystem (e.g., instructing coil 210 and antenna 212) to flip the electron or nuclear spin associated with defect 204. Processor 105 in system 100 may instruct the magnetic input component and the RF input component to perform magnetic resonance control, such as NMR and ESR, on defect 204 or multiple defects. For example, coil 210 may apply an intensity field B0 and an RF pulse to defect 204 and antenna 212, the frequency of which is proportional to the product of intensity field B0 and the gyromagnetic ratio γ of the spin and adjusted for additional spin interactions in device 200.

[0094] Device 200 may include a mechanical subsystem comprising one or more mechanical input components. An example of a mechanical input component is an actuator 214. Actuator 214 may be paired with a bracket or support (not shown) disposed on an opposite side of semiconductor material 202. The mechanical input component may be operable, for example, in response to the execution of processor-executable instructions, to selectively alter (e.g., apply, remove) the strain of semiconductor material 202 in at least one direction. Thus, the mechanical subsystem can achieve a change in the energy eigenstate of defect 204 through strain in semiconductor material 202. The mechanical input device may apply strain locally within or across semiconductor material 202. The mechanical input component may be disposed within semiconductor material 202 or physically coupled to the exterior of semiconductor material 202. The mechanical subsystem may include one or more microelectromechanical system (MEMS) components that alter the strain in semiconductor material 202 in response to the execution of processor-executable instructions. The MEMS may be powered by an electric field subsystem. The mechanical subsystem may include one or more piezoelectric elements.

[0095] Device 200 may include one or more cryogenic subsystems, such as cryogenic subsystem 216. Cryogenic subsystem 216 is selectively operable to alter the thermal distribution of the semiconductor material 202 (e.g., temperature, temperature gradient, temperature varying with space or time) and to achieve changes in the energy eigenstates of the defect 204. Cryogenic subsystem 216 may include one or both of heater 217 or cooler 218. Cryogenic subsystem 216 may be operable, for example, in response to executing processor-executable instructions, to selectively heat, cool, or create thermal gradients in the semiconductor material 202.

[0096] In various implementations, an example of device 200 operates as an information processor, wherein one or more input subsystems or devices are communicatively coupled to semiconductor material 202 or defect 204. One or more input subsystems or devices may be physically coupled to semiconductor material 202. For example, a quantum input subsystem may cover, be disposed near, or be disposed within semiconductor material 202. Optical input components, electrical input components, magnetic input components, etc., may cover (including those below) a portion of semiconductor material 202, or may be structures defined within semiconductor material 202. One or more output subsystems or readout devices are communicatively and / or physically coupled to semiconductor material 202 or defect 204. For example, a photon detector may be positioned like a light source 206. At least regarding... Figure 1 and Figure 7 Other examples of readout devices and detectors are described. Or at least see the co-pending U.S. patent application entitled "Systems, Devices, Articles, and Methods to Interact with Information Stored in Orbital States Associated with Silicon Defects". Figure 6 .

[0097] Figure 3A This includes a graph 300 showing energy levels plotted relative to the magnetic field strength. Each energy level is associated with one or more states of defect 204. Graph 300 includes an energy axis 302 and a magnetic field axis 304. Graph 300 shows the energy changes of multiple energy eigenstates (i.e., allowed steady states) as the magnetic field varies. Figure 3A The diagram includes multiple energy levels 305, 306, and 307. The first multiple energy level 305 corresponds to the lower state (e.g., ground state) of defect 204, labeled D0, such as a T-center in purified silicon. In some defects, the ground state is degenerate. In some defects, the lower first multiple energy level 305 is split at zero field. The second multiple energy level 306 corresponds to the state of the first bound exciton of the defect, labeled D0X1. Multiple energy levels 306 are positioned above the first multiple energy level 305. The bound exciton X1 comprises two electrons (e.g., paired in a spin singlet) and one hole. The third multiple energy level 307 is the energy level of the second bound exciton D0X2 of defect 204, in addition to the first bound exciton. For the third multiple energy level 307 shown for a multiexciton state, there are three electrons and two holes. The state of the third multiple energy level 307 can be determined by the number of excitons and electron spin through the pairing of two holes with two of the three electrons.

[0098] The first plurality of energy levels 305 can have a hyperfine structure. For example, the lowest energy level can be a singlet state, and the next higher energy level can be a triplet state. For certain defects, the singlet state can have energy levels higher than the triplet state. Under the applied magnetic field shown on axis 304, the lower-positioned first plurality of energy levels 305 splits into a plurality of energy levels 310, 312, 314, and 316. Energy levels 310, 312, 314, and 316 are characterized by spin-spin interactions at low fields and interactions with the applied magnetic field at high fields. At a field strength of 308A (e.g., 30 mT), the two triplet energy levels (i.e., 314 and 316) cross. At least at a field strength of 308B greater than 308A, the plurality of energy levels 310, 312, 314, and 316 are identified by electron spin and nuclear spin. See also Figure 3B .

[0099] Under the applied field indicated on axis 304, the second plurality of energy levels 306 of the first bound exciton X1 splits into at least one pair of energy levels corresponding to at least two states. For example, energy level 306 splits into energy level 320 and energy level 326 according to the spin of the hole. Under the applied field, the energy level 307 of the second bound exciton X2 splits into at least one pair of energy levels, such as energy level 328 and energy level 332. For example, the energy levels of the second exciton split due to energy difference in response to the interaction of the hole included in the second exciton with the applied magnetic field.

[0100] At a field strength at least equal to 308 Å, multiple energy levels, including 310, 312, 314, 316, 320, 326, 328, and 332, are identified by the number of excitons plus electron spin, hole spin, and nuclear spin. See also Figure 3B In some implementations, the field strength 308B is greater than that of 308A. Some transitions are allowed, and some are forbidden. Figure 3B Some transitions are shown in the diagram. Similar diagrams exist that show, for selected defect orientations, how multiple energy levels such as 310, 312, 314, etc., change with other physical conditions, such as variations in the electric field, temperature, light, and strain on the semiconductor material 202.

[0101] Figure 3B This is a schematic diagram illustrating multiple exemplary energy levels, energy eigenstates, or eigenstates 350 associated with defect 204. Defect 204 can be a bound exciton luminescent defect, such as a T-center. Different defects will have different energy levels and different labels for the energy eigenstates 350. Eigenstates 350 are drawn relative to energy axis 352 (not to scale). Multiple eigenstates 350 include energy levels 310, 312, 314, 316, 320, 326, 328, and 332 at high field values. Energy levels 310, 312, 314, 316, 320, 326, 328, and 332 can be referred to as eigenstates.

[0102] Figure 3B This includes multiple transitions 354 out of multiple 350s. Various transitions, such as energy differences, are shown, but any two eigenstates can support transitions that follow selection rules; for example, the moment integral of a pair of eigenstates can be very different from that of another pair of eigenstates.

[0103] The multiple transitions 354 are generally ordered from left to right in descending order of energy. Transitions 356, 357, 358, and 359 are partially defined by the energy levels (level 307) of the second exciton at defect 204. For example, transition 356 is between the lower energy level 310 and the exciton level 332. Transition 357 separates energy level 312 (which is itself higher than energy level 310) and exciton level 332. Transition 358 separates energy level 310 and exciton level 328, while transition 359 separates energy level 312 and exciton level 328. Transitions 360, 361, 362, and 363 are partially defined by the energy levels included in the second plurality of energy levels 306 of the first exciton at defect 204. Transitions 360, 361, 362, and 363 are partially defined by lower energy levels (level 305) of defect 204, such as levels 310 and 312. Transitions 364, 365, 366, and 367 are partially defined by energy levels of the second exciton at defect 204, i.e., energy levels in level 307. Transitions 364, 365, 366, and 367 are partially defined by lower energy levels of defect 204, such as level 314 or level 316.

[0104] Transitions 368, 369, 370, and 371 are partially defined by the energy levels of the first exciton at defect 204, i.e., the energy levels in the second plurality of energy levels 306. Transitions 368, 369, 370, and 371 are partially defined by the lower energy levels of defect 204, such as energy level 314 or energy level 316.

[0105] Transitions 372, 373, 375, 377, and 378 are transitions between states with the same number of excitons. For example, transition 372 is between energy levels 310 and 316, where the number of excitons is zero. Transition 373 is between two states with a number of two excitons. Transition 375 is between two states with a number of one exciton. Transitions 377, 378, and 379 are between pairs of states with a number of zero excitons.

[0106] Figure 3B Exemplary configurations 380 associated with multiple eigenstates 350 are illustrated schematically. The multiple configurations 380 describe multiple eigenstates 350 that can be used as computational states. The configurations within the multiple configurations 380 illustrate the quantum states of one or more particles associated with defect 204. (As...) Figure 3BAs shown, the configuration is denoted by ket and, unless otherwise specified, is indicated by the number of excitons, electron spin, nuclear spin, and hole spin. Therefore, the state |_,_,_,_> benh The exponents `benh` represent the number of bound excitons, electron spin, nuclear spin, and hole spin. Underlines indicate unspecified states. Particle states can be represented using specific symbols. For example, Arabic numerals represent the number of excitons, `↓` or `↑` represents electron spin, and double arrows are used as... The nuclear spin is directed towards spin-up, and the hole spin is indicated by dotted arrows as shown. The arrows in one direction represent two spin states of the same sign, and the spin value of the hole more specifically indicates the state, since a hole can have one of four spin values: -3 / 2, -1 / 2, 1 / 2, and 3 / 2.

[0107] In some implementations, multiple configurations 380 include bound exciton spin states. For example, a bound exciton state is modified by the spin of an unpaired electron. Alternatively or additionally, the bound exciton state is split by the spin of a hole or nuclear spin.

[0108] Configuration 381 includes a zero exciton count, electron spin down, and anti-aligned nuclear spin. Without excitons, there are no holes, so the final state is blank. Configuration 382 includes states where nuclear and electron spins are aligned. Configuration 383 has aligned electron spins and the same nuclear spins as configuration 382, ​​but in opposite directions. Configuration 384 includes electron and nuclear spins that are opposite to each other, as in configuration 381. In some implementations, the T-center at approximately 80 mT in configuration 384 is separated from configuration 381 by transition 372 with an energy difference of approximately 800 MHz. Under the same conditions, transition 379 with an energy difference of approximately 1 MHz is located between configurations 384 and 383. Under the same conditions, configuration 381 is separated from configuration 382 by transition 378 with an energy difference of approximately 4 MHz.

[0109] In configurations including excitons, the electron at defect 204 combines with another electron, so the electron's state does not carry information. Configurations include the state of holes within the excitons and optional core spin settings. Configuration 385 includes an exciton quantity of 1 and hole spin down. Configuration 388 includes an exciton count of 1 and hole spin-up. Configuration 389 includes an exciton count of 2 and hole spin-down. Configuration 392 includes an exciton count of 2 and hole spin-up.

[0110] Figure 4 Including showing based on Figure 3BTable 400 shows multiple computational states of the intrinsic state 350. Table 400 includes multiple pairs of computational states, where each corresponding pair includes a first (|0>) computational state and a second (|1>) computational state. The computational states vary depending on the implementation, and a pair of computational states is referred to as a code. In some implementations, at least one of the first computational state (|0>) and the second computational state (|1>) has at least one bound exciton associated with defect 204, for example, a non-zero number of bound excitons located on defect 204. In some implementations, the first and second computational states differ in their bound exciton configuration, for example, in the number of bound excitons located on defect 204. In some implementations, the first and second computational states differ in the configuration of the particles associated with defect 204.

[0111] In some implementations, a pair of computational states includes an electron spin configured for a bound exciton of defect 204 and a hole spin configured for a second bound exciton. In some implementations, the first computational state includes a first non-zero number of excitons and the second computational state includes a second non-zero number of excitons. The first and second exciton numbers are not zero and differ by one or more. In some implementations, the first computational state includes a first number of excitons and the second computational state includes a second number of excitons. The first and second exciton numbers are countable and differ by one or more.

[0112] In some implementations, a pair of computational states differs depending on the number of excitons in defect 204. For example, code 1 includes |0>=|0,↓,_,_> and The indices are ordered in the order of number of bound excitons, electron spin, nuclear spin, and hole spin, and the underscores are unspecified values, such as wildcards, and are irrelevant. Examples of computational states in Code 1 include configurations 381 or 382 and 385, which differ due to transitions 362 or 363. Other examples of computational states that differ due to the number of excitons in defect 204 include, for example, |0>=|x,_,_,_> and |1>=|x+1,_,_,_> and |0>=|x,_,_,_> and |1>=|x+2,_,_,_>, where x is the number of excitons.

[0113] In some implementations, computational states include spin states. A pair of computational states can differ due to spin states. For example, a pair of states may differ due to the value of the nuclear spin at defect 204. For example, Code 2 includes states that differ due to nuclear spin. and In some implementations, a pair of compute states following Code 2 are separated by configurations 381 and 382 via transition 378.

[0114] In some implementations, a pair of computational states includes the spins of the electrons in defect 204 and differs due to the spins of the electrons in defect 204. Example code is code 3: |0>=|x,↓,_> ben And |1>=|x+1,↑,_> ben The transitions between a pair of computational states following Code 3 include changes in electron spin (as in Code 2) and changes in the number of excitons (as in Code 1).

[0115] In some implementations, a pair of computational states differs due to the spin of the hole at defect 204. The hole is part of an exciton, and both computational states in the pair have excitons. For example, in code 4, the first computational state includes a spin-down hole, and the second computational state includes a spin-up hole. For the first bound exciton, this is... and Code 4 can be implemented using configurations 385 and 388, which differ from those for transition 375. In some implementations, electrons in the bound exciton are paired with electrons at defects, leaving the spin of the hole as a configuration element that defines the difference between computational states.

[0116] In some implementations, a pair of computational states differ due to spin flips, even if the spins are attached to different particles. For example, defect 204 with a bound exciton includes a spin hole spin included in one computational state, and the second computational state includes an electron spin flip. For example, code 5 includes |0>=|0,↓,_,_> and The difference between the first computational state and the second computational state lies in the spin of the electron and the hole, respectively.

[0117] In some implementations, a pair of computational states share the same spin on two different particles. For example, Code 6 includes... and Code 6 can be implemented by configuring 381 and 385. The associated transition 363 is spin-retained and brighter in spectral measurements.

[0118] In some implementations, a pair of computational states includes the number of excitons in defect 204 and varies depending on the number of excitons in defect 204. Example code is Code 7: |0>=|x___> and |1>=|x+1___>. Transitions between a pair of computational states following Code 7 include the creation of excitons from the ground state and the relaxation from the exciton state to a lower-order state. Code 7 can include computational states where nuclear spin is part of one or both computational states. For example, a pair of computational states that differ due to the number of excitons and nuclear spin, such as... and Code 7 can be used to process classical information encoded in photon states.

[0119] In some implementations, the computed state comprises the electron spin and nuclear spin of defect 204, wherein the computed state is not different by electron spin and nuclear spin, or by one or both of electron spin and nuclear spin. In some implementations, the up / down spin notation convention corresponds to two arbitrary spin eigenstates and does not necessarily need to be defined relative to alignment with the background magnetic field. In some implementations, the nuclear spin is 3 / 2, 5 / 2, or higher, and up / down notation is used to represent two of the many available nuclear spin eigenstates. In some implementations, the defect's charge state has multiple electrons, and up / down notation is used to represent two of the many available electron spin eigenstates.

[0120] In some implementations, defect 204 is associated with a computational state that includes another degree of freedom (e.g., supported or defined for it). For example, the local degree of freedom at defect 204 may be a local degree of freedom from other particles, such as electron spin, hole spin, or nuclear spin, or a split arising from the realization of strain, orbital state, or valley state.

[0121] In some implementations, defect 204 is associated with a pair of computational states with different numbers of excitons, and the first computational state is associated with a first particle and the second computational state is associated with a second particle. For example, the second computational state can be a hole-excited state, a singlet-excited state, or a triplet-excited state.

[0122] Figure 5A and Figure 5B It shows based on Figure 3B The figures shown are Figure 4 A schematic diagram of the computational space for the eigenstate 350 discussed in the text. Figure 5A This includes a computational space 500 plotted relative to a first axis 502 and a second axis 504. The first axis 502 includes a first position and a second position for the nuclear spin value. The second axis 504 includes a first position and a second position for the spin value of the electron at defect 204.

[0123] Computation space 500 schematically illustrates a first pair of computation states and a second pair of computation states at defect 204. Space 500 includes the first pair of computation states, which comprises a first computation state 506 and a second computation state 508. For this pair, the first computation state 506 can be configured using 381. To achieve this, the second computational state can be configured using 384. This is achieved, and the transition 510 between the first computational state 506 and the second computational state 508 can occur via transition 372.

[0124] Computation space 500 schematically illustrates the second pair of computation states for defect 204. The second pair of computation states includes a first computation state 516 and a second computation state 518. The first computation state 516 can be configured using 382. To achieve this, the second computational state can be configured using 383. This is achieved, and the transition 520 between the first computation state 516 and the second computation state 518 can occur via transition 377.

[0125] Figure 5B This includes a computational space 550 plotted relative to a first axis 552 and a second axis 552. The first axis 552 includes a first position, a second position, and a third position for the electron's down spin value, unknown spin value, and up spin value at defect 204. The second axis 554 includes a first position and a second position for the number of excitons at defect 204.

[0126] The computation space 550 includes triplet computation states of defect 204. These triplet computation states include a first computation state 556 and a second computation state 558. The first computation state 556 and the second computation state 558 are separated by a direct transition 564. The state of defect 204 can be manipulated from the first computation state 556 and the second computation state 558 via indirect transitions. For example, the defect can be elevated to a third computation state 557, i.e., an exciton state, via transition 562. Defect 204 can transition to the second computation state 558 via transition 563.

[0127] Figure 6 This is a block diagram schematically illustrating an example of a distributed system 600 including one or more devices, each device including a semiconductor body comprising one or more defects disposed therein. As shown, system 600 includes a photon source 601, a transmitter 602, a receiver 603, and a processor 604. As shown, system 600 includes multiple communication channels 170-1, 170-2, 170-3, 170-4, and 170-5 (collectively referred to as channel 170 or individually referred to as channel 170). Each of channel 170 can transmit information (e.g., quantum information, classical information) to and from photon source 601, transmitter 602, receiver 603, and processor 604.

[0128] Photon source 601 includes a semiconductor body 202-1 and a control system 155-1, the control system 155-1 being communicatively coupled to at least one defect (not shown) disposed in the semiconductor body 202-1. The control system 155-1 includes a circuit system and manipulates one or more defects (not shown) in response to processor-executable instructions. The control system 155-1 can place the defect into a fiducial state, such as a boost to an exciton state. Upon decay, defect 204 releases photons and the photons enter channels, such as channels 170-1 or 170-2, in some spatial modes. The control system 155-1 can be operated to emit multiple photons from the photon source 601 over time.

[0129] Emitter 602 includes a semiconductor body 202-2 and a control system 155-2, the control system 155-2 being communicatively coupled to at least one defect (e.g., a local light-emitting defect) disposed in the semiconductor body 202-2. Emitter 602 also includes an input subsystem 156-1. Input subsystem 156-1 includes a circuit system and is responsive to processor-executable instructions to manipulate information stored in one or more defects. For example, input subsystem 156-1 manipulates representative defects included in at least one defect disposed in the semiconductor body 202-2 into a combination of a first computational state and a second computational state. Emitter 602 can emit photons into a communication channel such as channel 170-1 or channel 170-4. Emitter 602 differs from photon source 601 in that the information in the photons emitted by emitter 602 can be different from each other. Emitter 602 can transmit information to receiver 603.

[0130] A receiver 603, communicatively coupled to communication channels 170-2 and 170-4, includes a semiconductor body 202-3 and a control system 155-3. The control system 155-3 is communicatively coupled to at least one defect (e.g., a damage center) (not shown) disposed in the semiconductor body 202-3. The receiver 603 includes an output subsystem 158-1, which includes circuitry and is responsive to processor-executable instructions to measure the state of one or more defects. At least regarding... Figure 6 and Figure 11 An example of a measurement operation is described.

[0131] Processor 604 includes a semiconductor body 202-4 and a control system 155-4, an input subsystem 156-2, and an output subsystem 158-2. Each of the control system 155-4, the input subsystem 156-2, and the output subsystem 158-2 is communicatively coupled to at least one defect (not shown) disposed in the semiconductor body 202-4. Processor 604 can function as a photon source, transmitter, receiver, or information processor. Processor 604 can be communicatively coupled to communication channel 170-3 and optionally coupled to channel 170-5.

[0132] Figure 7 This is a schematic diagram illustrating a quantum information processor 700. The quantum information processor 700 includes a semiconductor material 202, a pair of exemplary local light-emitting defects 204-1 and 204-2, and a coupler 702. The coupler 702 includes an optical structure disposed in or on the semiconductor material 202, close to both light-emitting defects 204-1 and 204-2. Defect 204-1 is spaced apart from the coupler 702 by a distance 704, and defect 204-2 is spaced apart from the coupler 702 by a distance 706. Distances 704 and 706 may be different. Distances 704 and / or 706 may be negligible. Defect 204-1 may be disposed on a first side of the coupler 702, while defect 204-2 may be disposed on a second side of the coupler 702. A controller may instruct an input subsystem; for example, processor 105 may instruct a quantum input subsystem 156 to transmit photons through the coupler 702. When the distances between 704 and 706 are sufficiently small given the refractive index and physical layout of the semiconductor material 202 and coupler 702, photons in coupler 702 can couple to defects 204-1 and 204-2. Therefore, a controller can realize or influence (e.g., cause or alter) multi-qubit operation via coupler photons disposed in coupler 702. Although one coupler (702) and two luminescent defects (204-1 and 204-2) are shown, the quantum information processor 700 can include a different number of defects and couplers. For example, the quantum information processor 700 can include three defects per coupler.

[0133] The controller can realize or influence (e.g., cause or alter) multi-qubit operation via virtual photons through coupler 702, for example, via vacuum-state coupling defects 204-1 and 204-2. The controller can control multi-qubit operation by altering the optical properties of coupler 702. For example, by injecting charge carriers (e.g., electrons, holes) into coupler 702 via circuitry 708 disposed in, on, or near semiconductor material 202. The charge carriers alter the refractive index of coupler 702, and multi-qubit operation is realized or influenced (e.g., cause or alter) by virtual photons passing through coupler 702.

[0134] Figure 8 A quantum information processor 800 is schematically illustrated. The quantum information processor 800 includes a semiconductor material 202 and a plurality of light-emitting defects 204. The plurality of defects 204 includes a first defect, a second defect, etc. The plurality of defects 204 are shown as a regular two-dimensional array or lattice, but may be shown as an irregular lattice due to design or manufacturing inaccuracies. The plurality of defects 204 may have one-dimensional, two-dimensional, or more-dimensional logical lattices. The plurality of defects 204 may extend in one, two, or three directions in the semiconductor material 202. The quantum information processor 800 includes various optical structures 802, 804, etc. The optical structures may include waveguides and resonators. Waveguide 802 is close (e.g., close enough for near-field or evanescent wave interactions) to at least one defect, as shown, close to a pair of defects 204. Waveguide 802 may be included in a coupler, such as coupler 702. Waveguide 802 may be included in the implementation Figure 1 , Figure 12 In the readout device described in the above.

[0135] Waveguide 804 (e.g., as defined in semiconductor material 202) is located near a plurality of light-emitting defects 204. As shown, waveguide 804 extends diagonally over some of the defects 204, but does not need to extend in a straight line or cover the defects 204. Waveguide 806 is located near a plurality of light-emitting defects including defect 204. For example, waveguide 806 may cover the semiconductor material 202 near the plurality of light-emitting defects including defect 204. Waveguide 806 extends away from semiconductor material 202 and may serve as part of channel 170, quantum input system 156, etc. Waveguide 808 may be positioned near one of the light-emitting defects included in the plurality of defects 204. Waveguide 808 may serve as part of channel 170, quantum input system 156, etc.

[0136] The quantum information processor 800 includes a resonator 810 surrounding a first luminescent defect among a plurality of defects 204. The resonator 810 can be used to initialize, manipulate, or read out the state of the associated first luminescent defect. The quantum information processor 800 also includes a resonator 812 adjacent to a second luminescent defect among the plurality of luminescent defects 204. The resonator 812 can be used to initialize, manipulate, or read out the state of the associated luminescent defect. In some implementations, the resonator and waveguide are adjacent to one or more luminescent defects.

[0137] In a quantum information processor 800, a plurality of luminescent defects 204 are arranged in an array or lattice, wherein each of the plurality of luminescent defects 204 is spaced apart from another luminescent defect by one of a plurality of offsets or translations. For example, translation 820 and translation 822. In some implementations, all of the plurality of luminescent defects 204 comprise the same computational state. The plurality of luminescent defects 204 may include a first group (e.g., one or more) of luminescent defects having a first pair of computational states and a second group (e.g., one or more) of luminescent defects having a second pair of computational states. See at least the document in Figure 9 The description at the location. Multiple luminescent defects 204 may include corresponding luminescent defects comprising multiple corresponding qubits. For example, a first luminescent defect may include a first qubit comprising a bound exciton state, and a first luminescent defect may include a second qubit comprising a nuclear spin state.

[0138] Figure 9 A quantum information processor 900 is schematically illustrated. The quantum information processor 900 includes a semiconductor material 202 and a plurality of locally emitting defects 204 having different computational states. In the quantum information processor 900, as shown, the plurality of defects 204 are configured as an array or lattice defined by translations 902 and 904. The lattice can be a logical lattice or a physical lattice. In some implementations, all of the plurality of defects 204 include multiple computational states (e.g., a first emitting defect included in defect 204 can use code 3 and a second emitting defect can use code 5, such as...). Figure 4 (As shown). For example, as Figure 9 As shown, five (5) types of computational states are encoded in multiple defects 204 (each encoded as AE). As shown, the computational states of luminescent defects at the beginning of rows differ between rows of the quantum information processor 900. Similar pairs of luminescent defects with the same computational state are distributed across the quantum information processor 900. Since the energy difference typically varies with the computational state, single-qubit and multi-qubit operations based on a specific energy difference can be applied to some or all of the quantum information processor 900, where the likelihood of affecting other (i.e., non-target) luminescent defects is low.

[0139] Figure 10An example method of operation 1000 (including, for example, actions 1002, 1004, etc.) for quantum information processors such as quantum information processors 200 and 800 is shown. For method 1000, as with other methods taught herein, various actions can be performed in a different order than those shown and described. Additionally, some actions may be omitted, and / or additional actions may be employed. One or more actions of method 1000 can be performed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1000 is performed by a controller, such as control subsystem 104 of system 100.

[0140] Method 1000 typically begins with a call from a controller. At 1002, the controller prepares an environment for a silicon substrate comprising one or more light-emitting defects. For example, the controller executes processor-executable instructions that, upon execution, cause the environmental subsystem and / or quantum input subsystem 156 to prepare device 200. The controller can prepare the silicon substrate comprising one or more light-emitting defects based on electrical, magnetic, thermal, or strain distributions, i.e., by altering the distribution of one or more of the magnetic field, electric field, strain, and heat. At 1002, the controller can prepare one or more light-emitting defects in a specific charge state, such as neutral, ionized one or more light-emitting defects. For example, a light-emitting defect in a neutral state may have an unpaired electron, which is removed when ionized alone. The light-emitting defect can be ionized by photoionization, applying charge carriers to the surrounding silicon material, etc.

[0141] At position 1004, the controller prepares one or more luminescent defects in a reference state comprising a specified number of bound excitons. For example, a ground state without any associated bound excitons. That is, a reference state exists for multiple luminescent defects. For a representative luminescent defect among the one or more defects, the reference state may include other degrees of freedom, such as charge states, hole spin states, electron spin states, nuclear spin states, configuration states, etc. The controller may prepare one or more luminescent defects in the reference state in different ways, including actions 1006, 1008, and 1010.

[0142] At 1006, the controller prepares one or more light-emitting defects in a reference state by executing processor-executable instructions that, upon execution, cause the input subsystem to pump one or more light-emitting defects to the reference state. For example, processor 105 may instruct quantum input subsystem 156 to use optical or electrical input devices to excite or boost the light-emitting defects to a target state. Figure 4 The computation state of the code shown.

[0143] At 1008, the controller prepares one or more light-emitting defects in a reference state by executing processor-executable instructions that, when executed, cause the quantum information processor to wait for one or more light-emitting defects to relax to the reference state.

[0144] At point 1010, the controller prepares one or more light-emitting defects in a reference state by executing processor-executable instructions that, upon execution, cause the quantum information processor to read out one or more light-emitting defects. That is, the state of one or more light-emitting defects is measured, for example, defect 204. The controller can read out the state of one or more light-emitting defects, as at least referred to herein. Figure 1 and Figure 12 As described, the controller can perform parity measurements, for example, measuring the aggregation properties of multiple luminescent defects in one or more defects. This document refers at least to... Figure 1 and Figure 12 An example of parity measurement is described.

[0145] If one or more defects are not in the reference state, the controller can manipulate the defects to the reference state at position 1012. For example, if a defect is measured by the controller and the defect has the state |1>, the controller can perform a bit-flipping operation on the luminescent defect, such as σ. X |1>=|0>。This article at least refers to Figure 11 and Figure 13 An example of single-qubit manipulation is described. Alternatively, if the state of one or more defects is not a reference state, then at 1012, the controller can manipulate the defects based on the defects being in another state, such as a second computational state.

[0146] Method 1000 ends until it is called again. After method 1000, there can be one or more other methods, such as method 1100.

[0147] Figure 11 An example method of operation 1100 (including, for example, actions 1102, 1104, etc.) of a quantum information processor, such as device 200 and quantum information processors 700 and 900, is illustrated. One or more actions of method 1100 can be performed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1100 is performed by a controller, such as processor 105 of system 100.

[0148] Method 1100 typically begins with a call from the controller. At 1102, the controller initializes one or more luminescent defects to computational states. For example, the controller prepares one or more luminescent defects in a reference state that includes local energy states. The controller can prepare one or more luminescent defects in the reference state by executing method 1000.

[0149] At 1104, the controller applies one or more operations to manipulate the state of one or more luminescent defects. For example, the controller executes processor-executable instructions, and in response to executing processor-executable instructions, the controller instructs one or more operations to manipulate the computational state of one or more luminescent defects. At 1106, the controller applies one or more single-qubit operations to manipulate the state of one or more luminescent defects. At 1108, the controller applies one or more multi-qubit operations to manipulate the state of two or more luminescent defects. For example, processor 105 may execute special information processor control instructions 130 to instruct defects 204-1 and 204-2 in quantum information processor 700 to optically couple.

[0150] At position 1110, the controller reads the state of one or more luminescent defects. This document at least refers to... Figure 1 and Figure 12 An example describing how the controller reads the state of one or more luminous defects.

[0151] Method 1100 ends until it is called again.

[0152] Figure 12 An example method of operation 1200 for a quantum information processor, such as quantum information processors 700 and 900, is illustrated. One or more actions of method 1200 (e.g., actions 1102, 1104, 1110, 1202, 1204) can be performed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1200 is performed by a controller, such as control subsystem 104 of system 100.

[0153] Method 1200 typically begins with a call from the controller. At 1102, the controller initializes one or more luminescent defects to a baseline state. At 1104, the controller applies one or more operations to manipulate the state of one or more luminescent defects.

[0154] At 1110, the controller reads out the state of one or more luminescent defects. The controller can read out the state of one or more luminescent defects in different ways, including actions 1202, 1204, 1206, and 1208. At 1202, the controller detects the emission and state of a photon from one of the one or more luminescent defects. For example, the quantum output subsystem 158 includes a measurement device pointing to a waveguide 808 included in the quantum information processor 800. At 1204, the controller maps the state of the luminescent defects included in one or more luminescent defects to an auxiliary photon. At 1208, the controller measures one or more spins associated with one or more luminescent defects. The spin state can indicate the computed (e.g., exciton) state of the luminescent defect. That is, the two computed states differ depending on the spin value, for example... Figure 4 Code 4 is shown in the image. At least refer to [the relevant source] in this document. Figure 15 An example of measurement of one or more spins associated with one or more luminescent defects is described.

[0155] The controller can use measurement techniques known in quantum information processing at actions 1202, 1204, or 1206. For example, the controller can perform parity measurements at actions 1202, 1204, or 1206, such as measuring the aggregation properties of multiple luminescent defects in one or more defects. This paper at least in Figure 1 and Figure 12 An example of parity check measurement is described below. The controller can perform measurements on a superimposed basis at actions 1202, 1204, or 1206. At actions 1202, 1204, or 1206, the controller can measure the first luminescent defect via associated components such as optical structures or auxiliary or reporting luminescent defects. Method 1200 ends until it is called again.

[0156] Figure 13 An example method of operation 1300 for a quantum information processor, such as device 200, quantum information processors 700, 800, and 900, is illustrated. One or more actions of method 1300 (e.g., actions 1102, 1106, 1302, 1304, etc.) can be performed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1300 is performed by a controller, such as processor 105 of system 100. In some implementations, processor 105 executes quantum information processor control instructions 130, and in response, system 100 executes method 1300.

[0157] Figure 13 Examples of the operation 1106 of quantum information processors, such as device 200, quantum information processors 800 and 900, are shown among other parts.

[0158] Method 1300 typically begins with a call from the controller. At 1102, the controller initializes one or more luminescent defects to a reference state. At 1106, the controller applies one or more single-qubit operations to manipulate the state of one or more luminescent defects. The controller may apply one or more single-qubit operations to manipulate the state of one or more luminescent defects in different ways, including actions 1302, 1304, and 1306.

[0159] At 1302, the controller applies (or causes to apply) a pulse signal to one or more luminescent defects. The pulse signal is a time-varying signal (e.g., shaped) at an appropriate frequency (e.g., close to the energy difference of the computed state) with appropriate phase and duration to achieve gate operation. For example, the controller can implement a pi / 2 sigma-X pulse to one or more luminescent defects. The pulse signal can be implemented via a magnetic manipulation subsystem, which includes coil 210, antenna 212, and waveform generator, such as the Tektronix AWG5200 generator available from Tektronix Corporation, Beaverton, OR, US.

[0160] At 1302, the controller can apply a signal at an appropriate frequency, such as the frequency corresponding to the energy difference between the computed states of the qubits in the rotating frame of the qubit. For example, the qubits can be driven by a series of pulses along a path defined on the Bloch sphere, the effect of which is to change the effective energy difference between the computed states. Such a changing energy difference can be manipulated by a signal approaching resonance to drive the qubits.

[0161] At 1302, the controller can apply a signal by the sum or difference of two main signals. For example, the controller causes the input subsystem to apply two pulses whose frequencies differ by an "approximately calculated" frequency difference.

[0162] In some implementations, the controller goes through processes such as... Figure 5B The transitions 562, 564, and transient state 557 shown influence single-qubit operation by indicating intermediate (temporary) states. Specifically, the controller applies multiple pulses via the input subsystem. For example, the first pulse includes a first frequency corresponding to the energy difference between the first computational state and the transient state. The second pulse includes a second frequency related to the energy difference between the transient state and the second computational state.

[0163] At 1304, the controller alters (or causes to be altered) the physical conditions of one or more luminescent defects. For example, the controller may instruct the quantum input subsystem 156 to change the distribution of magnetic fields, electric fields, strain, and heat. For example, the controller may cause electrode 208 to change the electric field applied to defect 204. The controller may operate light source 206 to change the electric field applied to defect 204. In some implementations, the controller may change the magnetic field distribution via one or more magnetic input components, such as coil 210.

[0164] The controller can alter the strain distribution (e.g., intensity, position, gradient, anisotropy) via one or more mechanical input devices. In some implementations, the controller can alter the thermal distribution of one or more quantum information processors. For example, the controller can cause heater 217 and cooler 218 to change the temperature of the luminescent defect.

[0165] At 1306, the controller manipulates (or causes to be manipulated) the spins associated with one or more luminescent defects. The controller can apply (or cause to be applied) pulse signals to one or more luminescent defects. The pulse signals can be implemented via a magnetic manipulation subsystem, coil 210, and antenna 212. The pulse signals can be directed to the electron spin, hole spin, or nuclear spin associated with one or more luminescent defects. The controller can map information from computational (e.g., exciton) states associated with one or more luminescent defects to one or more spin states, manipulate one or more spin states, and map one or more spin states back to computational states of one or more luminescent defects. The controller can map information from a first set of computational states associated with one or more luminescent defects to a second set of computational states, manipulate the information within that second set of computational states, and map the information back to the first set of computational states of one or more luminescent defects. In other words, at 1306, the controller manipulates the luminescent defects by temporarily manipulating associated degrees of freedom such as spin to impart phase to a superposition of computational (e.g., exciton) states. At position 1306, the controller can manipulate other auxiliary degrees of freedom.

[0166] Method 1300 ends until it is called again.

[0167] Figure 14An example method of operation 1400 for a quantum information processor, such as quantum information processors 700, 800, and 900, is illustrated. One or more actions of method 1400 (e.g., actions 1102, 1108, 1402, 1404, etc.) can be performed by or via one or more circuits, such as one or more hardware processors. In some embodiments, method 1400 is performed by a controller, such as a control subsystem 104 of system 100. In some implementations, control subsystem 104 executes quantum information processor control instructions 130, and in response, system 100 executes method 1400.

[0168] Figure 14 Examples of the action 1108 of a quantum information processor, such as device 200, quantum information processor 700, and 900, are shown among other parts.

[0169] Method 1400 typically begins with a call from the controller. At 1102, the controller initializes one or more luminescent defects to a reference state. At 1108, the controller applies one or more multi-qubit operations to manipulate the states of two or more luminescent defects. The controller may apply one or more multi-qubit operations to manipulate the states of two or more luminescent defects in different ways, including actions 1402, 1404, 1406, and 1408. Unless the context otherwise indicates, "two" as used herein includes two or more.

[0170] At 1402, the controller brings the two luminescent defects close to resonance. For example, the controller can make... Figure 9Type A and Type B defects 204 are shown to be close to resonance. A controller can alter the electric and / or magnetic field and / or strain applied to one or more of the two luminescent defects. The first luminescent defect may have a first transition between a pair of computed states, and the second luminescent defect may have a second transition between another pair of computed states. The computed state pairs may be logically equivalent, e.g., two pairs of |0> and |1>, which may be based on the same or different energy states. The controller can make the first transition resonate with the second transition. That is, the resonance condition can be the energy difference between the first and second computed states of the corresponding luminescent defect. The controller can make two or more luminescent defects close to resonance by driving the first transition of the first luminescent defect at or nearly at the frequency of the second transition of the second luminescent defect. The controller can also make two or more luminescent defects close to resonance by driving them at the same or nearly the same rotational frequency. The controller can make two or more luminescent defects close to resonance for transitions within the rotating frame of the corresponding luminescent defect. See S.R. Hartmann and E.L. Hahn, 1962, “Nuclear Double Resonance in the Rotating Frame”, Phys. Rev. 128: 2042–2053.

[0171] At 1404, the controller mediates the interaction between the two luminescent defects via coupler photons in a coupler located near the two luminescent defects. For example, coupler 702, i.e., an optical structure, is positioned near the first defect 204-1 and the second defect 204-2 and communicatively coupled to an input subsystem, such as quantum input subsystem 156. The controller can instruct the input subsystem to couple the first and second luminescent defects via at least one coupler photon disposed in the coupler in response to executing processor-executable instructions.

[0172] At 1406, the controller mediates the interaction between the two emission defects via virtual photons in a coupler located near the two emission defects. The controller can, in response to executing processor-executable instructions, instruct the input subsystem to couple the first and second emission defects via virtual photons positioned in the coupler. That is, the first and second emission defects interact via the vacuum state of the coupler. The controller can implement multi-qubit operations, such as tightening the coupler or changing the charge carriers in the coupler, as at least in... Figure 7 As shown and described in the text.

[0173] At 1408, the controller couples the two luminescent defects via intermediate transitions. For example, the coupler includes transitions that selectively resonate with transitions in the first and second luminescent defects. The controller can cause the input subsystem to bring the first transition of the first luminescent defect, the second transition of the second luminescent defect, and the third intermediate coupler transition close to resonance. Method 1400 ends until it is called again.

[0174] Figure 15 An example method of operation 1500 for a quantum information processor such as quantum information processors 800 and 900 is shown. One or more actions of method 1500 (e.g., actions 1102, 1502, 1504, etc.) can be executed by or via one or more circuits, such as one or more hardware processors. In some implementations, method 1500 is executed by a controller, such as processor 105 of system 100. In some implementations, processor 105 executes special information processor control instructions 130, and in response, system 100 executes method 1500.

[0175] Figure 15 Among other things, implementations of methods of operation in quantum information processors such as quantum information processors 700 and 900 are also shown. Method 1500 includes actions of mapping information from computation (e.g., exciton) states to spin states and / or mapping information from spin states to computation (e.g., exciton) states.

[0176] Method 1500 typically begins with a call from the controller. At 1102, the controller initializes one or more luminescent defects to a reference state. At 1502, optionally, the controller applies one or more operations to manipulate the computed state of one or more luminescent defects. At 1504, the controller maps the computed (e.g., exciton) state of one or more luminescent defects to one or more spin states of one or more luminescent defects. At 1506, optionally, the controller manipulates the spin state of one or more luminescent defects. For example, quantum input subsystem 156 manipulates a first linear combination of a first spin state and a second spin state into a second linear combination of spin states.

[0177] At 1508, optionally, the controller causes the output subsystem, such as output subsystem 158, to measure one or more spin states of one or more luminescent defects. This document refers at least to Figure 12 An example of measurement of one or more spins associated with one or more luminescent defects is described. At 1510, the controller maps one or more spin states of one or more luminescent defects to a computed (e.g., exciton) state of one or more luminescent defects.

[0178] Method 1500 ends until it is called again. After method 1500, other methods or actions can follow, such as referencing... Figure 12 The methods or actions described.

[0179] Unless otherwise specified herein, or unless the context clearly specifies otherwise, the term for modifying a numerical quantity means plus or minus ten percent (10). Unless otherwise specified, or unless the context clearly specifies otherwise, the term between two numerical values ​​shall be understood as between and including both numerical values.

[0180] In the above description, certain specific details are included to provide an understanding of the various disclosed implementations. However, those skilled in the art will recognize that implementations can be practiced without one or more of these specific details, parts of the method, components, materials, etc. In some cases, well-known structures associated with semiconductors and / or optical devices and / or quantum computing and / or quantum information processing, such as targets, substrates, lenses, waveguides, shielding, filters, lasers, and processor-executable instructions (e.g., BIOS, drivers), are not shown or described in detail to avoid unnecessarily obscuring the description of the disclosed implementations.

[0181] In this specification and the appended claims, the terms "a," "an," or "another" used to refer to "implementation," "example," or "mode of implementation" are used in the sense that a particular reference feature, structure, or characteristic described in connection with an implementation, example, or mode of implementation is included in at least one implementation, example, or mode of implementation. Therefore, phrases such as "in one implementation," "in an implementation," or "another implementation" do not necessarily all refer to the same implementation. Furthermore, a particular feature, structure, or characteristic may be combined in any suitable manner in one or more implementations, examples, or modes of implementation.

[0182] As used in this specification and the appended claims, unless the context otherwise indicates, the singular forms of articles such as “a,” “an,” and “the” include plural indicators. It should also be noted that, unless the context otherwise indicates, the term “or” is generally used in its meaning, including “and / or.”

[0183] Unless the context otherwise requires, throughout this specification and the appended claims, the word “comprising” and its variations such as “including” and “having” shall be interpreted in an open, inclusive sense, that is, as “including but not limited to”.

[0184] All U.S. patents, U.S. patent application publications, U.S. patent applications, foreign patents, foreign patent applications and non-patent publications (including PCT Publication WO2017089891A1 and PCT Application Serial No. PCT / IB2019 / 054312) mentioned in this specification or in any application data sheet are incorporated herein by reference in their entirety for all purposes.

[0185] While certain features of the described embodiments and implementations are described herein, many modifications, substitutions, alterations, and equivalents will now occur to those skilled in the art. Therefore, it should be understood that the appended claims are intended to cover all such modifications and variations falling within the scope of the described embodiments and implementations.

[0186] Terminology Explanation

[0187] Unless the context explicitly requires otherwise, throughout the specification and claims:

[0188] • Words such as “include” and “contain” should be interpreted as inclusive, not exclusive or exhaustive; that is, meaning “including but not limited to”.

[0189] • “Connection”, “coupled” or any variation thereof means any direct or indirect connection or coupling between two or more elements; the coupling or connection between elements can be physical, logical or a combination thereof;

[0190] • The words “this document,” “above,” “below,” and similar terms, when used to describe this specification, should refer to this specification as a whole, and not to any particular part of this specification;

[0191] • When referring to a list of two or more items, “or” encompasses all of the following interpretations of the word: any item in the list, all items in the list, and any combination of items in the list;

[0192] • The singular forms “one,” “a,” and “the” also include the meaning of any appropriate plural form.

[0193] The directional terms used in this specification and any appended claims (if any), such as “vertical,” “lateral,” “horizontal,” “upward,” “downward,” “forward,” “backward,” “inward,” “outward,” “left,” “right,” “front,” “backward,” “top,” “bottom,” “lower,” “above,” “below,” etc., depend on the specific orientation of the device described and shown. Various alternative orientations may be assumed for the subject matter described herein. Therefore, these directional terms are not strictly defined and should not be interpreted narrowly.

[0194] Embodiments of the present invention may be implemented using specially designed hardware, configurable hardware, programmable data processors (configured by providing software executable on the data processor, which may optionally include "firmware"), dedicated computers or data processors (specifically programmed, configured, or constructed to perform one or more steps of the methods as detailed herein), and / or combinations of two or more of these. Examples of specially designed hardware are: logic circuits, application-specific integrated circuits ("ASICs"), large-scale integrated circuits ("LSIs"), very large-scale integrated circuits ("VLSIs"), etc. Examples of configurable hardware are: one or more programmable logic devices such as programmable array logic ("PALs"), programmable logic arrays ("PLAs"), and field-programmable gate arrays ("FPGAs"). Examples of programmable data processors are: microprocessors, digital signal processors ("DSPs"), embedded processors, graphics processors, math coprocessors, general-purpose computers, server computers, cloud computers, mainframe computers, computer workstations, etc. For example, one or more data processors for the control circuitry of a device may implement the methods as described herein by executing software instructions in a processor-accessible program memory.

[0195] Processing can be centralized or distributed. In the case of distributed processing, information, including software and / or data, can be stored centrally or distributed. Such information can be exchanged between different functional units via communication networks such as local area networks (LANs), wide area networks (WANs) or the Internet, wired or wireless data links, electromagnetic signals, or other data communication channels.

[0196] For example, while procedures or blocks may be presented in a given order, alternative examples may execute routines with steps in a different order, or adopt systems with blocks in a different order, and some procedures or blocks may be deleted, moved, added, subdivided, combined, and / or modified to provide alternatives or subcombinations. Each of these procedures or blocks may be implemented in a variety of different ways. Furthermore, while procedures or blocks are sometimes shown to be executed serially, they may alternatively be executed in parallel, or may be executed at different times.

[0197] Furthermore, although the elements are sometimes shown to be executed sequentially, they may alternatively be executed simultaneously or in a different order. Therefore, it is intended that the appended claims be interpreted to include all such variations within their intended scope.

[0198] The software and other modules may reside on servers, workstations, personal computers, tablet computers, image data encoders, image data decoders, PDAs, color grading tools, video projectors, audiovisual receivers, displays (e.g., televisions), digital cinema projectors, media players, and other devices suitable for the purposes described herein. Those skilled in the art will understand that aspects of the system can be implemented using other communication, data processing, or computer system configurations, including: internet-connected devices, handheld devices (including personal digital assistants (PDAs)), wearable computers, various cellular or mobile phones, multiprocessor systems, microprocessor-based or programmable consumer electronics (e.g., video projectors, audiovisual receivers, displays such as televisions), set-top boxes, color grading tools, network PCs, microcomputers, mainframe computers, etc.

[0199] This invention can also be provided in the form of a program product. The program product may include any non-transitory medium carrying a set of computer-readable instructions that, when executed by a data processor, cause the data processor to perform the method of the invention. The program product according to the invention can be in any of a variety of forms. The program product may include, for example, non-transitory media, such as magnetic data storage media including floppy disks, hard disk drives, optical data storage media including CD-ROMs and DVDs, electronic data storage media including ROMs, flash RAMs, EPROMs, hard-wired or pre-programmed chips (e.g., EEPROM semiconductor chips), nanotechnology memories, etc. Computer-readable signals on the program product may optionally be compressed or encrypted.

[0200] In some implementations, the present invention can be implemented in software. For clarity, "software" includes any instructions that execute on a processor and may include (but is not limited to) firmware, resident software, microcode, etc. As those skilled in the art will appreciate, both the processing hardware and software can be wholly or partially centralized or distributed (or a combination thereof). For example, the software and other modules can be accessed via local memory, via a network, via a browser or other applications in a distributed computing context, or via other means suitable for the purposes described above.

[0201] In the context of the foregoing reference to components (e.g., software modules, processors, components, devices, circuits, etc.), unless otherwise indicated, reference to such component (including reference to “means”) shall be interpreted as including any component that performs the function of the described component (i.e., is functionally equivalent) as an equivalent of such component, including components whose structure is not structurally equivalent to that of the disclosed structure that performs the function in the exemplary embodiments of the present invention.

[0202] For illustrative purposes, specific examples of systems, methods, and apparatus have been described herein. These are merely examples. The techniques provided herein can be applied to systems other than those illustrated above. Many changes, modifications, additions, omissions, and substitutions are possible in the practice of this invention. This invention includes variations of the described embodiments that will be apparent to those skilled in the art, including variations obtained by: replacing features, elements, and / or actions with equivalent features, elements, and / or actions; mixing and matching features, elements, and / or actions from different embodiments; combining features, elements, and / or actions from the embodiments described herein with features, elements, and / or actions from other technologies; and / or omitting features, elements, and / or actions from the described embodiments.

[0203] Various features are described herein as existing in “some embodiments.” Such features are not mandatory and may not be present in all embodiments. Embodiments of the invention may include zero, any, or any combination of two or more such features. This is limited only to the extent that some features of such features are incompatible with other features of such features, and it is not possible for someone of ordinary skill in the art to construct a practical embodiment combining such incompatible features. Therefore, the description of “some embodiments” having feature A and “some embodiments” having feature B should be interpreted as explicitly indicating that the inventors also contemplate embodiments combining features A and B (unless otherwise stated in the description or features A and B are not compatible at all).

[0204] Therefore, the appended and described claims are intended to be interpreted to include all such modifications, substitutions, additions, omissions, and sub-combinations that can be reasonably inferred. The scope of the claims should not be limited by the preferred embodiments set forth in the examples, but should be given the broadest interpretation consistent with the description as a whole.

Claims

1. An apparatus for information processing, comprising: It mainly includes the semiconductor body of silicon; One or more local light-emitting defects are disposed within the semiconductor body, wherein the one or more local light-emitting defects are selected from the group consisting of T-centers, I-centers, Al1-centers, Ga1-centers, and M-centers, wherein: The corresponding local luminescent defect included in the one or more local luminescent defects supports the corresponding bound exciton, and The corresponding local light-emitting defects include a first computational state and a second computational state, and a control system. The control system includes a circuit system communicatively coupled to the semiconductor body. The control system is configured by processor-executable instructions to manipulate the first and second computational states of the one or more local light-emitting defects to store quantum information.

2. The device according to claim 1, wherein, The semiconductor body mainly comprises natural silicon.

3. The device according to claim 1, wherein, The semiconductor body mainly comprises purified silicon.

4. The device according to any one of claims 1 to 3, wherein, The one or more localized light-emitting defects located within the semiconductor body include one or more damage centers.

5. The device according to any one of claims 1 to 3, wherein, The one or more local light-emitting defects located within the semiconductor body are T-centers.

6. The device according to any one of claims 1 to 3, wherein, The one or more local light-emitting defects disposed within the semiconductor body are selected from the group consisting of Ga1 centers, Al1 centers, I centers, and M centers.

7. The device of claim 1 further includes a communication channel optically and communicatively coupled to the one or more local luminescence defects.

8. The device according to claim 1, wherein, The control system includes an output subsystem communicatively coupled to the one or more local luminescent defects, and the control system is configured via processor-executable instructions to measure a first computational state and / or a second computational state of the one or more local luminescent defects.

9. The device according to any one of claims 1 to 3 and claim 8, wherein, The control system includes an input subsystem communicatively coupled to the one or more local luminescence defects, and the control system is configured via processor-executable instructions to manipulate information stored in a first computational state and / or a second computational state of the one or more local luminescence defects.

10. The device according to claim 9, wherein, The control system is configured, via processor-executable instructions, to operate the input subsystem to change the number of excitons associated with one or more of the one or more local luminescence defects.

11. The device according to claim 9, wherein, The control system is configured, via processor-executable instructions, to manipulate a representative local luminescent defect included in one or more local luminescent defects into a combination of a first computational state and a second computational state of the representative local luminescent defect.

12. The device according to claim 11, wherein, The first computational state of the representative local luminescence defect does not include a bound exciton, and the second computational state of the representative local luminescence defect includes a bound exciton.

13. The device according to claim 11, wherein, The first computed state and the second computed state of the representative local luminescence defect differ in the number of bound excitons located at the representative local luminescence defect.

14. The device according to claim 11, wherein, The first computational state and the second computational state of the representative local luminescence defect differ due to the spin of the hole in the bound exciton associated with the representative local luminescence defect.

15. The device according to claim 11, wherein, The first computational state and the second computational state of the representative local luminescent defect are different due to spin flipping.

16. The device according to any one of claims 1 to 3, wherein, The first computational state and the second computational state have a first qubit, and the corresponding local light emission defect includes a third computational state and a fourth computational state of a second qubit.

17. A system for information processing, comprising: Information processing equipment, including: This mainly includes the silicon semiconductor body; and One or more local light-emitting defects are disposed within the semiconductor body, wherein the one or more local light-emitting defects are selected from the group consisting of T-centers, I-centers, Al1-centers, Ga1-centers, and M-centers, wherein: The corresponding local luminescent defect included in the one or more local luminescent defects supports the corresponding bound exciton, and The corresponding local luminescence defects include a first computational state and a second computational state, and A control subsystem comprising a circuitry communicatively coupled to the semiconductor body and configured to manipulate the one or more local light-emitting defects; At least one processor of the control subsystem is communicatively coupled to the control subsystem. At least one tangible computer-readable storage device communicatively coupled to the at least one processor and storing processor-executable instructions that, when executed by the at least one processor, cause the at least one processor to instruct the control subsystem to initialize the one or more local luminescent defects to the first computational state or the second computational state.

18. The system according to claim 17, wherein, The processor is configured via processor-executable instructions to instruct the control subsystem to manipulate information stored in a first computational state and / or a second computational state for the one or more local luminescent defects.

19. The system according to claim 17, wherein, The information processing device further includes one or more couplers, wherein a corresponding coupler among the one or more couplers is positioned close to a corresponding pair of local light-emitting defects included in the one or more local light-emitting defects.

20. The system according to claim 19, wherein, The processor is configured via processor-executable instructions to instruct the control subsystem to couple the corresponding pair of local luminescent defects.

21. The system according to claim 17, wherein, The processor is configured via processor-executable instructions to instruct the control subsystem to map information stored in local degrees of freedom to a superposition of a first computational state and a second computational state of the corresponding local luminescent defect.

22. The system of claim 17, comprising a communication channel optically and communicatively coupled to the one or more local luminescent defects.

23. The system according to any one of claims 17 to 22, wherein initializing the one or more local luminescent defects includes reading out a first computational state and / or a second computational state of the respective local luminescent defect based on photons emitted from the respective local luminescent defect.

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