Display device and method of manufacturing a display device

Abstract

A display device and a method of manufacturing a display device are provided. The display device can include a substrate, and a display element layer disposed on the substrate and including a light emitting element that emits light in a display direction. The display element layer can include a first contact electrode electrically connected to the light emitting element, a second contact electrode electrically connected to the light emitting element, and a bank pattern having a shape extending in the display direction. At least one of the first contact electrode, the second contact electrode, and the bank pattern can include a transparent conductive polymer.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0120897, filed with the Korean Intellectual Property Office on September 18, 2020, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The disclosed embodiments relate to a display device and a method of manufacturing the display device. Background Technology

[0003] Recently, with increasing interest in information display, research and development of display devices has been ongoing. Summary of the Invention

[0004] The disclosed embodiments relate to a display device that can reduce processing costs and a method for manufacturing the display device.

[0005] The disclosure is not limited to the foregoing aspects, and those skilled in the art will clearly understand from the following description other aspects not mentioned.

[0006] The disclosed embodiments may provide a display device, which may include: a substrate; and a display element layer disposed on the substrate and including a light-emitting element that emits light in a display direction. The display element layer may include: a first contact electrode electrically connected to the light-emitting element; a second contact electrode electrically connected to the light-emitting element; and a dam pattern having a shape extending in the display direction. At least one of the first contact electrode, the second contact electrode, and the dam pattern may include a transparent conductive polymer.

[0007] In the embodiments, the first contact electrode, the second contact electrode, and the embankment pattern can all be formed from transparent conductive polymers having the same composition ratio.

[0008] In an embodiment, the first contact electrode and the second contact electrode may be disposed between the substrate and the light-emitting element.

[0009] In an embodiment, the display device may further include: a first electrode electrically connected to a first contact electrode through a first contact hole; and a second electrode electrically connected to a second contact electrode through a second contact hole.

[0010] In an embodiment, the display device may further include: a first insulating layer disposed on a first electrode and a second electrode. A first contact hole and a second contact hole may be disposed in the first insulating layer. The first contact electrode, the second contact electrode, and a dam pattern may be disposed on the first insulating layer.

[0011] In the embodiments, the transparent conductive polymer may include at least one of poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS), polyacetylene, polypyrrole, polythiophene, poly(p-phenylene), poly(3,4-ethylenedioxythiophene), polyphenylene sulfide, poly(p-phenylene vinylidene), and polyaniline.

[0012] In the embodiments, the transparent conductive polymer may further include at least one of dimethyl sulfoxide, N-methylpyrrolidone, ethylene glycol, methanol, ethanol and isopropanol.

[0013] The disclosed embodiments may provide a method for manufacturing a display device, the method comprising: preparing a substrate; forming a first electrode and a second electrode on the substrate; disposing a first insulating layer to cover the first electrode and the second electrode; disposing a transparent conductive polymer layer on the first insulating layer; disposing a photoresist layer comprising a photosensitive material on the transparent conductive polymer layer; removing at least a portion of the photoresist layer using a mask; etching the transparent conductive polymer layer using an etching mask, wherein the etching mask is the photoresist layer from which the at least a portion has been removed; and a light-emitting element disposed in a display direction.

[0014] In an embodiment, the step of etching the transparent conductive polymer layer may include: forming a first contact electrode electrically connected to one end of the light-emitting element; and forming a second contact electrode electrically connected to the other end of the light-emitting element.

[0015] In an embodiment, the step of etching the transparent conductive polymer layer may further include: forming a dam pattern having a shape extending in the display direction.

[0016] In an embodiment, the step of etching the transparent conductive polymer layer may include simultaneously forming a first contact electrode, a second contact electrode, and a dam pattern.

[0017] In an embodiment, the step of setting the light-emitting element can be performed after the step of etching the transparent conductive polymer layer, and at least a portion of the first contact electrode and at least a portion of the second contact electrode can be disposed between the substrate and the light-emitting element.

[0018] In an embodiment, at least a portion of the transparent conductive polymer layer can be configured as a first contact electrode and a second contact electrode by etching the transparent conductive polymer layer, and at least another portion of the transparent conductive polymer layer can be configured as a dike pattern by etching the transparent conductive polymer layer.

[0019] In an embodiment, the mask may include a first mask region having a first transmittance and a second mask region having a second transmittance greater than the first transmittance.

[0020] The step of removing at least a portion of the photoresist layer may include: setting a portion of the transparent conductive polymer layer corresponding to a first mask region of the mask as a first contact electrode and a second contact electrode; and setting another portion of the transparent conductive polymer layer corresponding to a second mask region of the mask as a dam pattern.

[0021] In an embodiment, the first mask region may include a halftone region, and the second mask region may include a fulltone region.

[0022] In the embodiments, the transparent conductive polymer layer may include at least one of poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS), polyacetylene, polypyrrole, polythiophene, poly(p-phenylene), poly(3,4-ethylenedioxythiophene), polyphenylene sulfide, poly(p-phenylene vinylidene), and polyaniline.

[0023] In an embodiment, the step of setting the first insulating layer may include: forming a first through-hole in the first insulating layer that is fluidly connected to the first electrode; and forming a second through-hole in the first insulating layer that is fluidly connected to the second electrode.

[0024] In an embodiment, the step of setting a transparent conductive polymer layer may include: setting at least a portion of the transparent conductive polymer layer in a first through hole and a second through hole; forming a first contact hole to electrically connect a first electrode to the transparent conductive polymer layer; and forming a second contact hole to electrically connect a second electrode to the transparent conductive polymer layer.

[0025] In the embodiments, the first contact electrode, the second contact electrode, and the embankment pattern can all be formed from transparent conductive polymers having the same composition ratio.

[0026] The disclosed technical solutions may not be limited to the above-mentioned contents, and those skilled in the art will clearly understand other disclosed technical solutions from the disclosure provided below in conjunction with the accompanying drawings. Attached Figure Description

[0027] Figure 1 and Figure 2 These are schematic perspective views and schematic cross-sectional views showing a light-emitting element according to a disclosed embodiment.

[0028] Figure 3 This is a schematic plan view illustrating a display device according to a disclosed embodiment.

[0029] Figures 4 to 6 This is a schematic circuit diagram showing pixels according to various embodiments.

[0030] Figure 7 This is a schematic cross-sectional view showing pixels included in a display device according to a disclosed embodiment.

[0031] Figure 8 This is a schematic cross-sectional view showing pixels included in a display device according to a disclosed embodiment.

[0032] Figure 9 It is along Figure 3 A schematic cross-sectional view taken from line I-I'.

[0033] Figures 10 to 13 This is a schematic cross-sectional view illustrating a method of manufacturing a display device according to a disclosed embodiment.

[0034] Figures 14 to 18 This is a schematic cross-sectional view illustrating a method of manufacturing a display device according to a disclosed embodiment. Detailed Implementation

[0035] The embodiments described in this specification are intended to clearly explain the scope of the disclosure to those skilled in the art, and are not intended to limit the disclosure. The disclosure may include substitutions and variations within the spirit of the disclosure. The terminology used herein is selected from commonly used terms based on the functionality of the components according to the disclosed embodiments, and may have meanings that vary depending on the intent of those skilled in the art, conventions in the art, or emerging new technologies. Where specific terms with particular meanings are used, their meanings will be specifically described. Therefore, the terms used in this specification should not be defined as simple names of components, but rather as defined based on their actual meaning and the full context throughout the specification.

[0036] Unless the context clearly indicates otherwise, singular terms (e.g., “a,” “an,” “the”) may include plural terms, and vice versa. Terms such as “comprising,” “having,” and “including” indicate the presence of the stated element, but do not exclude the presence or addition of one or more other elements.

[0037] The accompanying drawings will help to explain the disclosure, and for the purpose of facilitating explanation, the shapes in the drawings may be exaggerated; therefore, the disclosure should not be limited to the drawings.

[0038] If a detailed description of a well-known function or structure in the specification would unnecessarily obscure the disclosed subject matter, then such a description will be omitted.

[0039] The disclosed embodiments relate to a display device and a method of manufacturing the display device.

[0040] The term “overlay” may include layered stacking, stacking, facing or oriented, extending above, extending below, covering or partially covering, or any other suitable term that will be understood and appreciated by one of ordinary skill in the art.

[0041] In the specification and claims, for purposes of meaning and interpretation, the phrase “at least one of…” is intended to include the meaning of “at least one selected from the group consisting of…”. For example, “at least one of A and B” can be understood to mean “A, B or A and B”.

[0042] For the purposes of its meaning and interpretation, the term “and / or” is intended to include any combination of the terms “and” and “or”. For example, “A and / or B” can be understood to mean “A, B or A and B”. The terms “and” and “or” can be used in a combined or separate sense and can be understood as equivalent to “and / or”.

[0043] As used herein, “about,” “approximately,” or “substantially” include the stated value and indicate an acceptable deviation of the particular value from that determined by a person of ordinary skill in the art, taking into account the measurement under discussion and the errors associated with the measurement of the particular quantity (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±30%, 20%, or 5% of the stated value.

[0044] In the following text, reference will be made to Figures 1 to 18 A display device and a method of manufacturing a display device according to an embodiment are described.

[0045] Figure 1 and Figure 2 These are schematic perspective views and schematic cross-sectional views illustrating a light-emitting element according to a disclosed embodiment. Although Figure 1 and Figure 2 A columnar light-emitting element (LD) is shown, but the type and / or shape of the light-emitting element (LD) are not limited to this.

[0046] Reference Figure 1 and Figure 2 The light-emitting element LD may include a first semiconductor layer 11, a second semiconductor layer 13, and an active layer 12 disposed (e.g., placed) between the first semiconductor layer 11 and the second semiconductor layer 13. For example, if the direction in which the light-emitting element LD extends is the longitudinal direction, then the light-emitting element LD may include a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13 that can be disposed (e.g., stacked continuously on each other) in the longitudinal direction.

[0047] The light-emitting element (LD) can be provided in the form of a pillar extending in one direction (e.g., provided). The LD may include a first end EP1 and a second end EP2. A first semiconductor layer 11 or a second semiconductor layer 13 may be disposed on the first end EP1 of the LD. The other of the first semiconductor layer 11 and the second semiconductor layer 13 may be disposed on the second end EP2 of the LD.

[0048] In an embodiment, the light-emitting element LD can be a light-emitting element manufactured in a cylindrical shape by means of etching or the like. The term "cylindrical" includes rod-like and bar-like shapes such as cylindrical and prism shapes that extend in the longitudinal direction (e.g., having an aspect ratio greater than 1), and its cross-sectional shape is not limited to a particular shape. For example, the length L of the light-emitting element LD can be greater than its diameter D (or the width of its cross-section).

[0049] Light-emitting elements (LDs) can have small dimensions ranging from nanometers to micrometers. For example, each LD can have a diameter D (or width) and / or length L ranging from nanometers to micrometers. However, the size of LDs is not limited to this, and can be varied in various ways depending on the design conditions of various devices (e.g., display devices) that use light-emitting devices with LDs as light sources.

[0050] The first semiconductor layer 11 may be a first conductive semiconductor layer. For example, the first semiconductor layer 11 may include an N-type semiconductor layer. For example, the first semiconductor layer 11 may include an N-type semiconductor layer, which may include one or more semiconductor materials selected from InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and may be doped with a first conductive dopant such as Si, Ge, Sn, or combinations thereof. However, the materials forming the first semiconductor layer 11 are not limited to these, and the first semiconductor layer 11 may be formed from various other materials.

[0051] The active layer 12 can be disposed on the first semiconductor layer 11 and has a single quantum well structure or a multiple quantum well structure. The position of the active layer 12 can be changed in various ways depending on the type of light-emitting element (LD).

[0052] A capping layer (not shown) doped with a conductive dopant may be selectively formed on and / or beneath the active layer 12. For example, the capping layer may be formed of an AlGaN layer or an InAlGaN layer. In embodiments, materials such as AlGaN or InAlGaN may be used to form the active layer 12, and various other materials may be used to form the active layer 12.

[0053] The second semiconductor layer 13 may be disposed on the active layer 12 and may include a semiconductor layer of a different type than the first semiconductor layer 11. For example, the second semiconductor layer 13 may include a P-type semiconductor layer. For example, the second semiconductor layer 13 may include a P-type semiconductor layer comprising one or more semiconductor materials selected from InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and may be doped with a second conductive dopant such as Mg. However, the materials used to form the second semiconductor layer 13 are not limited to these, and the second semiconductor layer 13 may be formed from various other materials.

[0054] If a voltage equal to or greater than the threshold voltage is applied to each of the opposite ends of the light-emitting element (LD), the LD emits light through the recombination of electron-hole pairs in the active layer 12. Since the light emission of the LD can be controlled based on the aforementioned principle, the LD can be used as a light source for pixels in various light-emitting devices and display devices.

[0055] The light-emitting element LD may also include an insulating film INF disposed on the surface of the light-emitting element LD. The insulating film INF may be formed on the surface of the light-emitting element LD to surround at least the outer peripheral (peripheral) surface of the active layer 12, and may also surround a region of each of the first semiconductor layer 11 and the second semiconductor layer 13.

[0056] In an embodiment, the insulating film INF can expose the opposite ends of the light-emitting element LD with different polarities to the outside. For example, the insulating film INF can expose the ends of each of the first semiconductor layer 11 and the second semiconductor layer 13 disposed on the first end EP1 and the second end EP2 of the light-emitting element LD. In an embodiment, the insulating film INF can expose the sides of each of the first semiconductor layer 11 and the second semiconductor layer 13 adjacent to the first end EP1 and the second end EP2 of the light-emitting element LD with different polarities.

[0057] In an embodiment, the insulating film INF may have silicon oxide (SiO2) as a component. x ), silicon nitride (SiN) x ), silicon oxynitride (SiO) x N y ), aluminum oxide (AlO) x ) and titanium dioxide (TiO) x At least one insulating material of the following: a single-layer or multi-layer structure (e.g., aluminum oxide (AlO)). x ) and silicon dioxide (SiO) x (A double-layer structure is formed). However, the disclosure is not limited thereto. In embodiments, the insulating film INF may be omitted.

[0058] When the insulating film INF is configured to cover the surface of the light-emitting element LD (specifically, the outer peripheral surface of the active layer 12), short circuits between the active layer 12 and the first pixel electrode or the second pixel electrode, which will be described below, can be prevented. Therefore, the electrical stability of the light-emitting element LD can be ensured.

[0059] If the insulating film INF is applied to the surface of the light-emitting element (LD), the occurrence of defects on the surface of the LD can be minimized, thereby improving the lifespan and efficiency of the LD. Even when multiple LDs are arranged adjacent to each other, unwanted short circuits between the LDs can be prevented.

[0060] In embodiments, in addition to the first semiconductor layer 11, the active layer 12, the second semiconductor layer 13, and / or the insulating film INF that may surround the first semiconductor layer 11, the active layer 12, and / or the second semiconductor layer 13, the light-emitting element LD may also include additional components. For example, the light-emitting element LD may further include at least one phosphor layer, at least one active layer, at least one semiconductor layer, and / or at least one electrode layer disposed on the ends of the first semiconductor layer 11, the active layer 12, and / or the second semiconductor layer 13. For example, contact electrode layers may be disposed on each of the first end EP1 and the second end EP2 of the light-emitting element LD. Although Figure 1 and Figure 2 A cylindrical light-emitting element (LD) is shown, but the type, structure, and / or shape of the LD can be varied in various ways. For example, the LD can be formed from a core-shell structure with a pyramidal shape.

[0061] Light-emitting devices, including the aforementioned light-emitting elements (LDs), can be used not only in display devices but also in various other devices that may require a light source. For example, multiple LDs can be arranged in each pixel of a display panel, allowing the LDs to function as the light source for the pixel. However, the applications of LDs are not limited to the examples mentioned above. For instance, LDs can also be used in other types of devices that may require a light source, such as lighting devices.

[0062] Figure 3 This is a schematic plan view illustrating a display device according to a disclosed embodiment.

[0063] Figure 3 A display device (specifically, a display panel PNL that can be disposed in the display device) is shown as a device that can be used. Figure 1 and Figure 2 The embodiments described herein are examples of electronic devices using a light-emitting element (LD) as a light source.

[0064] Each pixel portion PXU of the display panel PNL and each pixel used to form the pixel portion PXU may include at least one light-emitting element LD. To explain, Figure 3 The structure of a display panel PNL focused on the display area DA according to an embodiment is simply illustrated. In some embodiments, although not shown, at least one driving circuit (e.g., at least one of a scan driver and a data driver), lines (wiring), and / or pads (also referred to as "pads") may be further provided on the display panel PNL.

[0065] Reference Figure 3 The display panel PNL may include a substrate SUB and pixel portions PXU disposed on the substrate SUB. Pixel portions PXU may include a first pixel PXL1, a second pixel PXL2, and / or a third pixel PXL3. In the following text, the terms "pixel PXL" or "multiple pixels PXL" will be used to uniformly refer to any one or two or more pixels among the first pixel PXL1, the second pixel PXL2, and the third pixel PXL3.

[0066] The substrate SUB can form the base of the display panel PNL and can be a rigid or flexible substrate or film. For example, the substrate SUB can be a rigid substrate made of glass or tempered glass, a flexible substrate (or film) made of plastic or metal, or at least one insulating layer. There are no particular limitations on the material and / or properties of the substrate SUB.

[0067] In some embodiments, the substrate SUB may be substantially transparent. Here, the term "substantially transparent" can mean that light can pass through the substrate SUB with a certain transmittance or higher. In some embodiments, the substrate SUB may be translucent or opaque. Furthermore, in some embodiments, the substrate SUB may include a reflective material.

[0068] The display panel PNL and the substrate SUB used to form the display panel PNL may include a display area DA for displaying images and a non-display area NDA formed in an area other than the display area DA.

[0069] Pixel PXL can be set in the display area DA. Various lines, pads, and / or internal circuitry of pixel PXL, which can be electrically connected to the display area DA, can be set in the non-display area NDA. Pixel PXL can be configured according to stripes or... The arrangement of pixels PXL is structured and regular. The arrangement structure of pixels PXL is not limited to this, and pixels PXL can be arranged in the display area DA in various structures and / or schemes.

[0070] In an embodiment, two or more pixels PXL emitting different colors of light can be disposed in the display area DA. For example, a first pixel PXL1 emitting a first color of light, a second pixel PXL2 emitting a second color of light, and a third pixel PXL3 emitting a third color of light can be arranged in the display area DA. At least one first pixel PXL1, at least one second pixel PXL2, and at least one third pixel PXL3 disposed adjacent to each other can form a pixel portion PXU capable of emitting light of various colors. For example, each of the first to third pixels PXL1, PXL2, and PXL3 can be a sub-pixel emitting a predetermined color of light. In an embodiment, the first pixel PXL1 can be a red pixel emitting red light, the second pixel PXL2 can be a green pixel emitting green light, and the third pixel PXL3 can be a blue pixel emitting blue light. However, the disclosure is not limited thereto.

[0071] In an embodiment, the first pixel PXL1, the second pixel PXL2, and the third pixel PXL3 may each include a light-emitting element associated with a first color, a light-emitting element associated with a second color, and a light-emitting element associated with a third color as light sources, respectively, so that the pixels can emit light of the first color, the second color, and the third color, respectively. In another embodiment, the first pixel PXL1, the second pixel PXL2, and the third pixel PXL3 may each include a light-emitting element emitting light of the same color, and color filters and color conversion layers of different colors may be disposed on each light-emitting element, so that the pixels can emit light of the first color, the second color, and the third color, respectively. However, there are no particular limitations on the color, type, and / or number of pixels PXL forming each pixel portion PXU. In other words, the color of the light emitted from each pixel PXL can be changed in various ways.

[0072] Pixel PXL may include at least one light source that can be driven by control signals (e.g., scan signals and data signals) and / or power sources (e.g., a first power source and a second power source). In embodiments, the light source may include, according to... Figure 1 and Figure 2 At least one light-emitting element (LD) in any embodiment, for example, an ultra-miniature columnar light-emitting element (LD) having a small size corresponding to a range from nanometers to micrometers. However, the disclosure is not limited thereto, and different types of light-emitting elements (LDs) can be used as the light source for the pixel PXL.

[0073] In this embodiment, each pixel PXL may be formed by an active pixel. However, the type, structure, and / or driving scheme of the pixel PXL that can be applied to the display device is not particularly limited. For example, each pixel PXL may have the same structure as the pixels used in passive or active light-emitting display devices that have various structures and / or can operate with various driving schemes.

[0074] Figures 4 to 6 This is a schematic circuit diagram illustrating pixels according to various embodiments. For example, Figures 4 to 6 An embodiment of a pixel PXL that can be applied to an active display device is shown. However, the types of pixel PXL and display devices are not limited to this.

[0075] In an embodiment, Figures 4 to 6 The pixel PXL shown can be set to... Figure 3 Any one of the first pixel PXL1, the second pixel PXL2, and the third pixel PXL3 on the display panel PNL. The first pixel PXL1, the second pixel PXL2, and the third pixel PXL3 may have substantially the same or similar structures.

[0076] Reference Figure 4 The pixel PXL may include a light source portion LSU that generates light with brightness corresponding to the data signal and a pixel circuit PXC that drives the light source portion LSU.

[0077] The light source section LSU may include at least one light-emitting element LD electrically connected between a first power supply VDD and a second power supply VSS. For example, the light source section LSU may include a first electrode ELT1 (also referred to as a "first pixel electrode" or "first alignment electrode") electrically connected to the first power supply VDD via a pixel circuit PXC and a first power line PL1, a second electrode ELT2 (also referred to as a "second pixel electrode" or "second alignment electrode") electrically connected to the second power supply VSS via a second power line PL2, and light-emitting elements LD electrically connected in the same direction between the first electrode ELT1 and the second electrode ELT2. In an embodiment, the first electrode ELT1 may be an anode electrode, and the second electrode ELT2 may be a cathode electrode.

[0078] Each of the light-emitting elements (LDs) may include a first terminal (e.g., a P-type terminal) electrically connected to a first power supply VDD via a first electrode ELT1 and / or pixel circuit PXC, and a second terminal (e.g., an N-type terminal) electrically connected to a second power supply VSS via a second electrode ELT2. In other words, the light-emitting elements (LDs) may be electrically connected in parallel in the forward direction between the first electrode ELT1 and the second electrode ELT2. Each of the light-emitting elements (LDs) electrically connected in the forward direction between the first power supply VDD and the second power supply VSS may form an effective light source. The effective light source may form the light source portion LSU of pixel PXL.

[0079] The first power supply VDD and the second power supply VSS can have different potentials to make the light-emitting element LD emit light. For example, the first power supply VDD can be set to a high potential power supply, and the second power supply VSS can be set to a low potential power supply. Here, during at least the emission period (cycle) of the pixel PXL, the potential difference between the first power supply VDD and the second power supply VSS can be set to the threshold voltage of the light-emitting element LD or greater.

[0080] The first end (e.g., the P-type end) of the light-emitting element LD forming each light source section LSU can be electrically connected to the pixel circuit PXC via the electrodes of the light source section LSU (e.g., the first electrode ELT1 of each pixel PXL), and is electrically connected to the first power supply VDD via the pixel circuit PXC and the first power line PL1. The second end (e.g., the N-type end) of the light-emitting element LD can be electrically connected to the second power supply VSS via the second power line PL2 and the electrodes of the light source section LSU (e.g., the second electrode ELT2 of each pixel PXL).

[0081] The light-emitting element (LD) can emit light with a brightness corresponding to the driving current supplied to it by the corresponding pixel circuit (PXC). For example, during each frame period, the pixel circuit (PXC) can supply a driving current corresponding to the grayscale value to be expressed in the corresponding frame to the light source section (LSU). The driving current supplied to the light source section (LSU) can be distributed among the light-emitting elements (LDs) electrically connected in the forward direction. Therefore, each of the light-emitting elements (LDs) can emit light with a brightness corresponding to the current applied to it, such that the light source section (LSU) can emit light with a brightness corresponding to the driving current.

[0082] The pixel circuit PXC can be electrically connected between the first power supply VDD and the first electrode ELT1. The pixel circuit PXC can also be electrically connected to the scan line Si and data line Dj of the corresponding pixel PXL. For example, if pixel PXL is located on the i-th (i can be a natural number) horizontal line (row) and j-th (j can be a natural number) vertical line (column) of the display area DA, then the pixel circuit PXC of pixel PXL can be electrically connected to the i-th scan line Si and the j-th data line Dj of the display area DA.

[0083] In an embodiment, the pixel circuit PXC may include transistors and at least one capacitor. For example, the pixel circuit PXC may include a first transistor T1, a second transistor T2, and a storage capacitor Cst.

[0084] The first transistor T1 can be electrically connected between the first power supply VDD and the light source section LSU. For example, the first electrode (e.g., the source electrode) of the first transistor T1 can be electrically connected to the first power supply VDD, and the second electrode (e.g., the drain electrode) of the first transistor T1 can be electrically connected to the first electrode ELT1. The gate electrode of the first transistor T1 can be electrically connected to the first node N1. The first transistor T1 can control the drive current supplied to the light source section LSU in response to the voltage of the first node N1. In other words, the first transistor T1 can be a drive transistor that controls the drive current of the pixel PXL.

[0085] The second transistor T2 can be electrically connected between the data line Dj and the first node N1. For example, the first electrode (e.g., the source electrode) of the second transistor T2 can be electrically connected to the data line Dj, and the second electrode (e.g., the drain electrode) of the second transistor T2 can be electrically connected to the first node N1. The gate electrode of the second transistor T2 can be electrically connected to the scan line Si. When a scan signal SSi with a gate on-state voltage (e.g., a low-level voltage) is supplied from the scan line Si, the second transistor T2 can be turned on to electrically bond the first node N1 to the data line Dj.

[0086] During each frame period, the data signal DSj corresponding to the frame can be supplied to the data line Dj, and the data signal DSj can be transmitted to the first node N1 through the second transistor T2, which can be turned on during the period in which the scan signal SSi with a gate on voltage can be supplied. In other words, the second transistor T2 can be a switching transistor that transmits each data signal DSj to the inside of the pixel PXL.

[0087] One electrode of the storage capacitor Cst can be electrically connected to a first power supply VDD, and the other electrode can be electrically connected to a first node N1. During each frame period, the storage capacitor Cst can be charged with a voltage corresponding to the data signal DSj that will be supplied to the first node N1.

[0088] although Figure 4 The transistors included in the pixel circuit PXC (e.g., both the first transistor T1 and the second transistor T2) are shown to be P-type transistors, but the disclosure is not limited thereto. At least one of the first transistor T1 and the second transistor T2 can be changed to an N-type transistor. The pixel circuit PXC can be formed from pixel circuits that can have various structures and / or operate through various driving schemes.

[0089] Reference Figure 5The pixel circuit PXC can also be electrically connected to the sensing control line SCLi and the sensing line SLj. For example, the pixel circuit PXC of pixel PXL, which is located on the i-th horizontal line and j-th vertical line of display area DA, can be electrically connected to the i-th sensing control line SCLi and the j-th sensing line SLj of display area DA. The pixel circuit PXC may also include a third transistor T3. In an embodiment, the sensing line SLj can be omitted, and the characteristics of pixel PXL can be detected by detecting the sensing signal SENj via the data line Dj of the corresponding pixel PXL (or adjacent pixels).

[0090] The third transistor T3 can be electrically connected between the first transistor T1 and the sensing line SLj. For example, the first electrode of the third transistor T3 can be electrically connected to the electrode (e.g., the source electrode) of the first transistor T1, which is electrically connected to the first electrode ELT1, and the second electrode of the third transistor T3 can be electrically connected to the sensing line SLj. If the sensing line SLj is omitted, the second electrode of the third transistor T3 can be electrically connected to the data line Dj.

[0091] The gate electrode of the third transistor T3 can be electrically connected to the sensing control line SCLi. If the sensing control line SCLi is omitted, the gate electrode of the third transistor T3 can be electrically connected to the scan line Si. The third transistor T3 can be turned on during the sensing period by a sensing control signal SCSi with a gate on-state voltage (e.g., a high-level voltage) supplied to the sensing control line SCLi, thereby electrically connecting the sensing line SLj to the first transistor T1.

[0092] In an embodiment, the sensing period can be a time period in which characteristics (e.g., the threshold voltage of the first transistor T1, etc.) of each of the pixels PXL disposed in the display area DA can be extracted (obtained). During the sensing period, the first transistor T1 can be turned on by supplying a reference voltage that enables the first transistor T1 to conduct to the first node N1 via the data line Dj and the second transistor T2, or by combining each pixel PXL with a current source, etc. Furthermore, the third transistor T3 can be turned on by supplying a sensing control signal SCSi having a gate conduction voltage to the third transistor T3, so that the first transistor T1 can be electrically connected to the sensing line SLj. Thereafter, a sensing signal SENj can be obtained through the sensing line SLj, and the sensing signal SENj can be used to detect the characteristics of the pixels PXL, including the threshold voltage of the first transistor T1, etc. Information about the characteristics of each pixel PXL can be used to convert image data so that characteristic deviations between pixels PXL disposed in the display area DA can be compensated.

[0093] although Figure 5An embodiment is shown in which the first transistor T1, the second transistor T2, and the third transistor T3 can be N-type transistors, but the disclosure is not limited thereto. For example, at least one of the first transistor T1, the second transistor T2, and the third transistor T3 can be changed to a P-type transistor.

[0094] Furthermore, despite Figure 4 and Figure 5 An embodiment is shown in which the effective light sources (e.g., light-emitting elements LD) used to form each light source section LSU can be electrically connected in parallel with each other, but the disclosure is not limited thereto. For example, as Figure 6 As shown, the light source portion (LSU) of each pixel PXL can have at least two levels of cascaded structure. Figure 6 In the description of the embodiments, the same reference numerals are used to specify the same as those in the drawings. Figure 4 and Figure 5 The components in the embodiments are similar to or equivalent to the components (e.g., pixel circuits PXC), and their detailed explanation will be omitted.

[0095] Reference Figure 6 The light source unit (LSU) may include at least two light-emitting elements connected in series with each other. For example, the light source unit (LSU) may include a first light-emitting element LD1, a second light-emitting element LD2, and a third light-emitting element LD3, which may be connected in series in the forward direction between a first power supply VDD and a second power supply VSS. The first light-emitting element LD1, the second light-emitting element LD2, and the third light-emitting element LD3 may form each effective light source.

[0096] In the following text, when specifying a particular light-emitting element among the first light-emitting element LD1, the second light-emitting element LD2, and the third light-emitting element LD3, the corresponding light-emitting element will be referred to as "first light-emitting element LD1", "second light-emitting element LD2", or "third light-emitting element LD3". The term "light-emitting element LD" or "multiple light-emitting elements LD" will be used to arbitrarily specify at least one of the first light-emitting element LD1, the second light-emitting element LD2, and the third light-emitting element LD3, or to uniformly specify the first light-emitting element LD1, the second light-emitting element LD2, and the third light-emitting element LD3.

[0097] The first end (e.g., P-type end) of the first light-emitting element LD1 can be electrically connected to the first power supply VDD via the first electrode (e.g., the first pixel electrode) ELT1 of the light source portion LSU. The second end (e.g., N-type end) of the first light-emitting element LD1 can be electrically connected to the first end (e.g., P-type end) of the second light-emitting element LD2 via the first intermediate electrode IET1.

[0098] The first end of the second light-emitting element LD2 can be electrically connected to the second end of the first light-emitting element LD1. The second end of the second light-emitting element LD2 (e.g., the N-type end) can be electrically connected to the first end of the third light-emitting element LD3 (e.g., the P-type end) through the second intermediate electrode IET2.

[0099] The first end of the third light-emitting element LD3 can be electrically connected to the second end of the second light-emitting element LD2. The second end of the third light-emitting element LD3 (e.g., the N-type end) can be electrically connected to the second power supply VSS via the second electrode (e.g., the second pixel electrode) ELT2 of the light source portion LSU. In this way, the first light-emitting element LD1, the second light-emitting element LD2, and the third light-emitting element LD3 can be continuously connected in series between the first electrode ELT1 and the second electrode ELT2 of the light source portion LSU.

[0100] although Figure 6 An embodiment in which the light-emitting elements (LDs) can be electrically connected in a series structure is shown, but the disclosure is not limited thereto. Two light-emitting elements (LDs) can be electrically connected in a two-stage series structure, or four or more light-emitting elements (LDs) can be electrically connected in a four-stage or more series structure.

[0101] Assuming that light-emitting elements (LDs) with identical conditions (e.g., identical size and / or number) are used to express the same brightness, compared to a light source portion LSU with a structure in which the LDs can be connected in parallel, the voltage applied between the first electrode ELT1 and the second electrode ELT2 can be increased, and the amount of drive current flowing through the light source portion LSU can be decreased in a light source portion LSU with a structure in which the LDs can be connected in series. Therefore, when the light source portion LSU of each pixel PXL is formed using a series structure, the panel current flowing through the display panel PNL can be reduced.

[0102] As described in the foregoing embodiments, each light source portion LSU may include a light-emitting element LD that can be electrically connected in the forward direction between a first power supply VDD and a second power supply VSS to form a respective effective light source. Furthermore, the connection structure between the light-emitting elements LD can be varied in various ways depending on the embodiments. For example, the light-emitting elements LD may be electrically connected only in series or in parallel with each other, or in a series / parallel combination structure.

[0103] In the following text, reference will be made to Figure 7 The pixel PXL included in the display device according to the embodiment is described.

[0104] Figure 7 This is a schematic cross-sectional view showing pixels included in a display device according to a disclosed embodiment.

[0105] Reference Figure 7A pixel PXL may include a substrate layer (BSL), a pixel circuit layer (PCL), and a display element layer (DPL). For explanation, see [reference needed]. Figure 7 and Figure 8 The description can be based on and Figures 4 to 6 The structure of the transistor corresponding to the first transistor T1 in the transistors shown.

[0106] The substrate layer (BSL) can be rigid or flexible. The substrate layer (BSL) can be as described above. Figure 3 The substrate SUB is described. In embodiments, the substrate layer BSL may comprise a rigid or flexible material. For example, flexible materials may comprise at least one of polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate. However, the materials applicable to the substrate layer BSL of the disclosed embodiments are not limited to the specific examples.

[0107] The pixel circuit layer PCL may include a buffer layer BFL, a first transistor T1, a gate insulating layer GI, a first interlayer insulating layer ILD1, a second interlayer insulating layer ILD2, a bridging pattern BRP, a power line PLE, a first contact CNT1, a second contact CNT2, and a passivation layer PSV.

[0108] A buffer layer (BFL) can be deposited on the substrate layer (BSL). The buffer layer (BFL) prevents impurities from diffusing from the outside. The buffer layer (BFL) may include silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and such as aluminum oxide (AlO) x At least one of the metal oxides of ).

[0109] The first transistor T1 can be a thin-film transistor. For example, the first transistor T1 can be a driving transistor of a thin-film transistor. The first transistor T1 may include a semiconductor layer SCL, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0110] The semiconductor layer SCL can be disposed on the buffer layer BFL. The semiconductor layer SCL can include at least one of polycrystalline silicon, amorphous silicon, and oxide semiconductor.

[0111] The semiconductor layer SCL may include a first contact region that contacts the source electrode SE and a second contact region that contacts the drain electrode DE.

[0112] Each of the first contact region and the second contact region can be a semiconductor pattern doped with impurities. The region between the first contact region and the second contact region can be a channel region. The channel region can be an intrinsic semiconductor pattern that is not doped with impurities.

[0113] The gate insulating layer GI can be disposed on the semiconductor layer SCL. The gate insulating layer GI can include inorganic materials. For example, the gate insulating layer GI can include silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and aluminum oxide (AlO x At least one of the following. In an embodiment, the gate insulating layer GI may include an organic material.

[0114] The gate electrode GE can be formed on the gate insulating layer GI. The location of the gate electrode GE can correspond to the location of the channel region of the semiconductor layer SCL. For example, the gate electrode GE can be disposed on the channel region of the semiconductor layer SCL, with the gate insulating layer GI disposed between them.

[0115] The first interlayer insulating layer ILD1 can be disposed on the gate electrode GE. The first interlayer insulating layer ILD1 can include silicon nitride (SiN) in the same manner as the gate insulating layer GI. x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and aluminum oxide (AlO x At least one of the following.

[0116] The source electrode SE and drain electrode DE can be disposed on the first interlayer insulating layer ILD1. The source electrode SE can contact the first contact region of the semiconductor layer SCL through the gate insulating layer GI and the first interlayer insulating layer ILD1. The drain electrode DE can contact the second contact region of the semiconductor layer SCL through the gate insulating layer GI and the first interlayer insulating layer ILD1.

[0117] The second interlayer insulating layer ILD2 can be disposed on the source electrode SE and the drain electrode DE. The second interlayer insulating layer ILD2 can comprise an inorganic material in the same manner as the first interlayer insulating layer ILD1 and the gate insulating layer GI. The inorganic material can include, for example, silicon nitride (SiN). x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and aluminum oxide (AlO x The material is at least one of the following. In an embodiment, the second interlayer insulating layer ILD2 may include an organic material.

[0118] The bridging pattern BRP can be set on the second interlayer insulation layer ILD2. The bridging pattern BRP can be electrically connected to the drain electrode DE through contact holes passing through the second interlayer insulation layer ILD2.

[0119] The power line PLE can be set on the second interlayer insulation layer ILD2. The power line PLE can be applied with reference to the above. Figures 4 to 6 The power of the second power line PL2 is described.

[0120] The passivation layer PSV can be disposed on the second interlayer insulation layer ILD2. The passivation layer PSV can cover the bridging pattern BRP and the power line PLE.

[0121] The passivation layer PSV can be provided in the form of an organic insulating layer, an inorganic insulating layer, or a structure including an organic insulating layer disposed on an inorganic insulating layer.

[0122] The first contact CNT1, which is electrically connected to the area of ​​the bridging pattern BRP, and the second contact CNT2, which is electrically connected to the area of ​​the power line PLE, can pass through the passivation layer PSV.

[0123] The display element layer DPL may include a first electrode ELT1, a second electrode ELT2, a first insulating layer INS1, a first contact hole CH1, a second contact hole CH2, a dam pattern BNP, a first contact electrode CNE1, a second contact electrode CNE2, a light-emitting element LD, a dam BNK, and a second insulating layer INS2.

[0124] The first electrode ELT1 can be disposed on the passivation layer PSV. The first electrode ELT1 and the second electrode ELT2 can be formed on the same layer. The first electrode ELT1 can be electrically connected to the first contact CNT1 and can be a path from the first power supply VDD along which the applied voltage is applied.

[0125] The second electrode ELT2 can be disposed on the passivation layer PSV. The second electrode ELT2 and the first electrode ELT1 can be formed on the same layer. The second electrode ELT2 can be electrically connected to the second contact CNT2 and can be a path from the second power supply VSS along which the applied voltage is applied.

[0126] The first electrode ELT1 and the second electrode ELT2 can reflect light emitted from the light-emitting element LD in the display direction of the display device, thereby improving the emission efficiency of the light-emitting element LD. Here, the display direction can refer to the third direction DR3, which is perpendicular to the plane formed by the first direction DR1 and the second direction DR2.

[0127] The first insulating layer INS1 can be disposed on the passivation layer PSV. The first insulating layer INS1 can include silicon nitride (SiN) in the same manner as the second interlayer insulating layer ILD2. x ), silicon dioxide (SiO) x ), silicon oxynitride (SiO) x N y ) and aluminum oxide (AlO x At least one of the following.

[0128] The first insulating layer INS1 can be disposed on the first electrode ELT1 and the second electrode ELT2 to stabilize the electrical connection and reduce external influences.

[0129] BNK can be the emission area that defines the pixel PXL (see reference). Figure 9 The structure of the 'EMA'. The emission region EMA can refer to the area in which light can be emitted from the light-emitting element LD. For example, the embankment BNK can be set in the boundary region between the light-emitting element LD and the adjacent light-emitting element LD to surround the light-emitting element LD of the pixel PXL.

[0130] BNK can include organic or inorganic materials.

[0131] First contact electrode CNE1 and second contact electrode CNE2 can be disposed on the first insulating layer INS1. First contact electrode CNE1 and second contact electrode CNE2 can be disposed between the pixel circuit layer PCL and the light-emitting element LD. First contact electrode CNE1 and second contact electrode CNE2 can be disposed between the substrate layer BSL and the light-emitting element LD. First contact electrode CNE1 can be electrically connected to the first electrode ELT1 through a first contact hole CH1 formed in the first insulating layer INS1. Second contact electrode CNE2 can be electrically connected to the second electrode ELT2 through a second contact hole CH2 formed in the first insulating layer INS1.

[0132] The electrical signal provided by the first electrode ELT1 can be supplied to the light-emitting element LD through the first contact electrode CNE1. The light-emitting element LD can emit light based on the provided electrical signal. The electrical signal provided by the second electrode ELT2 can be supplied to the light-emitting element LD through the second contact electrode CNE2.

[0133] The embankment pattern BNP can have an upwardly extending (e.g., protruding) shape (e.g., the upward direction can refer to the third direction DR3). In a plan view, the embankment pattern BNP can be arranged in the form of enclosing an area in which a light-emitting element LD can be disposed.

[0134] The first contact electrode CNE1, the second contact electrode CNE2, and the embankment pattern BNP can be formed using the same process (same process). Alternatively, the first contact electrode CNE1, the second contact electrode CNE2, and the embankment pattern BNP can be formed using a single etching process. Furthermore, the first contact electrode CNE1, the second contact electrode CNE2, and the embankment pattern BNP can be obtained by placing the target layer to be etched and etching the target layer at different locations.

[0135] The first contact electrode CNE1, the second contact electrode CNE2, and the dam pattern BNP can all comprise the same material. Each of the first contact electrode CNE1, the second contact electrode CNE2, and the dam pattern BNP can be formed of the same material. For example, each of the first contact electrode CNE1, the second contact electrode CNE2, and the dam pattern BNP can comprise a transparent conductive material. In particular, each of the first contact electrode CNE1, the second contact electrode CNE2, and the dam pattern BNP can comprise a transparent conductive polymer. For example, each of the first contact electrode CNE1, the second contact electrode CNE2, and the dam pattern BNP can be formed of a transparent conductive polymer having the same composition ratio (constitution ratio).

[0136] The term "transparent" can indicate that light can pass through the material with a certain transmittance or higher. The first contact electrode CNE1 and the second contact electrode CNE2 may include transparent conductive materials to meet the transmittance requirement, such that light emitted from the light-emitting element LD can pass through the first contact electrode CNE1 and the second contact electrode CNE2 and be emitted to the outside.

[0137] Reference Figures 10 to 18 A detailed description of the process for the dam pattern BNP, the first contact electrode CNE1 and the second contact electrode CNE2, and the transparent conductive polymer is provided. Therefore, repeated descriptions can be omitted.

[0138] A light-emitting element (LD) can be disposed on a first contact electrode CNE1 and a second contact electrode CNE2. One end of the LD can contact the first contact electrode CNE1, and the other end of the LD can contact the second contact electrode CNE2. The LD can have the above-mentioned features. Figure 1 and Figure 2 The structure described.

[0139] The second insulating layer INS2 can be disposed on the dam BNK, the dam pattern BNP, the first contact electrode CNE1, the second contact electrode CNE2, and the light-emitting element LD. The second insulating layer INS2 can comprise one or more organic or inorganic materials. The second insulating layer INS2 can protect the components of the display element layer DPL from external influences. In an embodiment, at least a portion of the second insulating layer INS2 can be disposed on the rear surface (bottom surface) of the light-emitting element LD. During the process of forming the second insulating layer INS2 on the light-emitting element LD, the second insulating layer INS2 formed on the rear surface of the light-emitting element LD can fill the space between the first insulating layer INS1 and the light-emitting element LD.

[0140] In the following text, reference will be made to Figure 8 The pixel PXL included in the display device according to the embodiment is described. Repeated descriptions may be omitted.

[0141] Figure 8 This is a schematic cross-sectional view showing pixels included in a display device according to a disclosed embodiment.

[0142] The pixel PXL included in the display device according to the embodiment may further include a third insulating layer INS3 and a fourth insulating layer INS4, and may not include the dike pattern BNP.

[0143] The pixel PXL included in the display device according to the embodiment and the pixel PXL included in the display device according to the foregoing embodiment may differ from each other in the positional relationship between the light-emitting element LD and the first contact electrode CNE1 and the second contact electrode CNE2.

[0144] Reference Figure 8 The light-emitting element LD can be disposed on the first insulating layer INS1. For example, the first insulating layer INS1 can have a recess. At least a portion of the light-emitting element LD can contact one end formed by the recess, while another portion of the light-emitting element LD can contact the other end formed by the recess.

[0145] The third insulating layer INS3 can be placed on the light-emitting element LD. The third insulating layer INS3 can cover the above reference. Figure 2 The active layer 12 of the light-emitting element LD is described. At least a portion of the third insulating layer INS3 may be disposed on the rear surface of the light-emitting element LD. During the process of forming the third insulating layer INS3 on the light-emitting element LD, the third insulating layer INS3 formed on the rear surface of the light-emitting element LD may fill the space between the first insulating layer INS1 and the light-emitting element LD.

[0146] The third insulating layer INS3 may include at least one of organic or inorganic materials. When the third insulating layer INS3 includes an organic material, it may be an organic insulating layer.

[0147] At least a portion of each of the first contact electrode CNE1 and the second contact electrode CNE2 may be disposed on the light-emitting element LD. The first contact electrode CNE1 and the second contact electrode CNE2 may be electrically connected to the light-emitting element LD.

[0148] The first contact electrode CNE1 and the second contact electrode CNE2 can be referenced. Figure 7 The same approach described includes transparent conductive polymers.

[0149] The second insulating layer INS2 included in the display device according to the embodiment can be disposed on the diaphragm BNK, the first contact electrode CNE1, the third insulating layer INS3, and the light-emitting element LD. In other words, in the embodiment, the second insulating layer INS2 can be disposed between the first contact electrode CNE1 and the second contact electrode CNE2. Thus, if the second insulating layer INS2 is formed between the first contact electrode CNE1 and the second contact electrode CNE2, then the first end of the light-emitting element LD (e.g., Figure 2 EP1) and the second end (e.g., Figure 2 The electrical stability between EP2 and EP2 is ensured. Therefore, short-circuit defects between the first and second terminals of the light-emitting element LD can be prevented.

[0150] The fourth insulating layer INS4 can be disposed on the embankment BNK, the second insulating layer INS2, and the second contact electrode CNE2. For example, the fourth insulating layer INS4 can cover the outermost periphery of the display element layer DPL and protect the components of the display element layer DPL from external influences.

[0151] The fourth insulating layer INS4 may comprise organic or inorganic materials. For example, the fourth insulating layer INS4 may comprise one or more of the materials illustratively listed for the first insulating layer INS1.

[0152] In the following text, reference will be made to Figure 9 The light control layer LCP and the upper substrate UPL disposed in the display device according to the embodiment are described. For the sake of explanation, the detailed description of the pixel circuit layer PCL and the display element layer DPL will be omitted, and the structure including the light control layer LCP will be described in detail.

[0153] Figure 9 It is along Figure 3 A schematic cross-sectional view taken from line I-I'.

[0154] The light control layer (LCP) can be placed on the display element layer (DPL). The light control layer (LCP) may include a color conversion layer (CCL) and a color filter layer (CFL).

[0155] In one embodiment, the filler layer 510 may be disposed between the display element layer DPL and the light control layer LCP. The filler layer 510 may include epoxy resin, urethane acrylate, epoxy acrylate, silicone resin (e.g., bisphenol A type epoxy resin, alicyclic epoxy resin, phenyl silicone resin, rubber, aliphatic urethane acrylate, etc.) or combinations thereof. In other embodiments, the filler layer 510 may include one or more materials selected from the group consisting of hexamethyldisiloxane, octamethyltrisiloxane, decamethyltetrasiloxane, dodecylpentasiloxane, and polydimethylsiloxane. However, the materials included in the filler layer 510 are not limited to the foregoing examples, and various fillers (fillers) may be used.

[0156] The color conversion layer (CCL) may include a black matrix (BM), wavelength conversion patterns 530 and 540, and a first light transmission pattern 550. Wavelength conversion patterns 530 and 540 may include a first wavelength conversion pattern 530 and a second wavelength conversion pattern 540.

[0157] The black matrix (BM) can be positioned in the non-emissive area (NEA) between the color filter layer (CFL) and the display element layer (DPL). The black matrix (BM) can define the emissive area (EMA) and the non-emissive area (NEA).

[0158] The emitting region EMA can refer to the area from which light can be emitted, and the non-emitting region NEA can refer to the area from which light cannot be emitted. For example, the area where a black matrix BM can be set can correspond to the non-emitting region NEA from which light cannot be emitted. The black matrix BM can include light-shielding materials and / or reflective materials.

[0159] In the planar view, the first wavelength conversion pattern 530 can be set in the emission region EMA of the first pixel PXL1.

[0160] The first wavelength conversion pattern 530 may include a first wavelength conversion material 531, a first matrix resin 532, and a first scatterer 533.

[0161] The first wavelength conversion material 531 can convert the peak wavelength of light applied thereto. For example, the first wavelength conversion material 531 can convert blue light into red light with a wavelength ranging from about 610 nm to about 650 nm.

[0162] The first wavelength conversion material 531 can be a quantum dot (QD), a quantum rod, or a fluorescent material.

[0163] Here, a quantum dot can refer to a particulate material that emits light of a specific wavelength as electrons transition from the conduction band to the valence band. Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have specific band gaps depending on their composition and size, thus absorbing light and emitting light of an intrinsic wavelength. Examples of semiconductor nanocrystals containing quantum dots can include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI compound nanocrystals, or combinations thereof.

[0164] The first matrix resin 532 may have high light transmittance and excellent dispersion characteristics relative to the first wavelength conversion material 531. For example, the first matrix resin 532 may include organic materials such as epoxy resin, acrylic resin, cardo resin, imide resin, or combinations thereof.

[0165] The first scatterer 533 may have a refractive index different from that of the first matrix resin 532, and forms an optical interface with the first matrix resin 532. The first scatterer 533 may be a light-scattering particle. For example, the first scatterer 533 may be a metal oxide particle or an organic particle.

[0166] In the planar view, the second wavelength conversion pattern 540 can be disposed in the emission region EMA of the second pixel PXL2. The second wavelength conversion pattern 540 may include a second wavelength conversion material 541, a second matrix resin 542, and a second scatterer 543.

[0167] The second wavelength conversion material 541 can convert the peak wavelength of light applied thereto. For example, the second wavelength conversion material 541 can convert blue light into green light with a wavelength ranging from about 510 nm to about 550 nm.

[0168] The second wavelength conversion material 541 can be a quantum dot, a quantum rod, or a fluorescent material.

[0169] The second matrix resin 542 may have high light transmittance and excellent dispersion characteristics for the second wavelength conversion material 541. For example, the second matrix resin 542 may include organic materials such as epoxy resin, acrylic resin, calorie resin, imide resin, or combinations thereof in the same manner as the first matrix resin 532.

[0170] The second scatterer 543 may have a refractive index different from that of the second matrix resin 542, and form an optical interface with the second matrix resin 542. The second scatterer 543 may be a light scattering particle.

[0171] In the planar view, the first light transmission pattern 550 can be disposed in the emission region EMA of the third pixel PXL3. The first light transmission pattern 550 may include a third substrate resin 552 and a third scatterer 553.

[0172] The third matrix resin 552 may have high light transmittance and excellent dispersion characteristics for the third diffuser 553. For example, the third matrix resin 552 may include organic materials such as epoxy resin, acrylic resin, calorie resin, imide resin, or combinations thereof in the same manner as the first matrix resin 532.

[0173] The third scatterer 553 may have a refractive index different from that of the third matrix resin 552, and form an optical interface with the third matrix resin 552. For example, the third scatterer 553 may be a light scattering particle.

[0174] The capping layer 582, together with the color filter CF, can seal the first wavelength conversion pattern 530, the second wavelength conversion pattern 540, and the first light transmission pattern 550, thereby preventing external impurities such as water or air from penetrating and damaging or contaminating the first wavelength conversion pattern 530, the second wavelength conversion pattern 540, or the first light transmission pattern 550. The capping layer 582 may include at least inorganic or organic materials.

[0175] The color filter layer CFL may include a light-blocking pattern LBP and a color filter CF. The color filter CF may include a first color filter CF1, a second color filter CF2, and a third color filter CF3.

[0176] A light-blocking pattern (LBP) can be disposed within the non-emitting region (NEA). The LBP can be disposed along the boundary of the emitting region (EMA) and blocks light transmission. The LBP may comprise a light-shielding material. According to an embodiment, the LBP and the black matrix (BM) can be formed from the same material, but the disclosure is not limited thereto.

[0177] Any of the color filters (CFs) can selectively allow light of a specific wavelength to pass through it (itself) and absorb light of a different wavelength. Light that has passed through a color filter (CF) can express one of the three primary colors, including red, green, and blue. However, the colors expressed by light that has passed through a color filter (CF) are not limited to the three primary colors, and the light can express any of cyan, magenta, yellow, and white.

[0178] A first color filter CF1 may be disposed in the emission region EMA of the first pixel PXL1. The first color filter CF1 allows light of the first color to pass through it and absorbs light of the second and third colors. The first color filter CF1 may include a colorant for the first color.

[0179] A second color filter CF2 can be disposed in the emission region EMA of the second pixel PXL2. The second color filter CF2 allows light of the second color to pass through it and absorbs light of the first color and the third color. The second color filter CF2 may include a colorant for the second color.

[0180] A third color filter CF3 can be disposed in the emission region EMA of the third pixel PXL3. The third color filter CF3 allows light of the third color to pass through it and absorbs light of the first color and the second color. The third color filter CF3 may include a colorant for the third color.

[0181] The upper substrate UPL can be disposed on the light control layer LCP. The upper substrate UPL can include a light-transmitting material. The upper substrate UPL can be a rigid substrate or a flexible substrate. For example, the upper substrate UPL can be a window assembly or an encapsulation substrate.

[0182] In the following text, reference will be made to Figures 10 to 13 A display device and a method of manufacturing a display device according to an embodiment are described.

[0183] Figures 10 to 13 This is a schematic cross-sectional view illustrating a method of manufacturing a display device according to a disclosed embodiment.

[0184] Reference Figure 10 A substrate layer BSL and a pixel circuit layer PCL disposed on the substrate layer BSL can be set (e.g., prepared). A first electrode ELT1 and a second electrode ELT2 can be formed on the pixel circuit layer PCL. Although not in Figure 10 As shown in detail, the first electrode ELT1 and the second electrode ELT2 can be electrically connected to the first contact CNT1 and the second contact CNT2, which can be disposed on the pixel circuit layer PCL, respectively. A first insulating layer INS1 can be disposed to cover the first electrode ELT1 and the second electrode ELT2.

[0185] Contact holes CH1 and CH2 can be formed in the first insulating layer INS1, and the contact holes CH1 and CH2 are fluidly connected to the first electrode ELT1 and the second electrode ELT2, respectively. Each of the contact holes CH1 and CH2 can have a hole shape that passes through the first insulating layer INS1.

[0186] Reference Figure 11 A transparent conductive polymer layer 100 may be disposed on the first insulating layer INS1. The transparent conductive polymer layer 100 may include a transparent conductive polymer.

[0187] In the embodiments, the transparent conductive polymer may include at least one of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), polyacetylene, polypyrrole, polythiophene, poly(p-phenylene), poly(3,4-ethylenedioxythiophene), polyphenylene sulfide, poly(p-phenylene vinylidene), and polyaniline, but the disclosure is not limited thereto.

[0188] In an embodiment, a dopant may be added to the transparent conductive polymer layer 100 to enhance the conductivity (electrical conductivity) of the transparent conductive polymer layer 100.

[0189] For example, the dopant may include at least one of dimethyl sulfoxide, N-methylpyrrolidone, ethylene glycol, methanol, ethanol and isopropanol.

[0190] The thickness of the transparent conductive polymer layer 100 may be at least less than or equal to the thickness of the dam pattern BNP that will be formed later.

[0191] At least a portion of the transparent conductive polymer layer 100 may be disposed in the region where the first contact electrode CNE1, the second contact electrode CNE2, and the dam pattern BNP may be disposed. In other words, at least a portion of the transparent conductive polymer layer 100 that cannot be removed by an etching process performed after the transparent conductive polymer layer 100 has been disposed on the first insulating layer INS1 may be at least one of the first contact electrode CNE1, the second contact electrode CNE2, and the dam pattern BNP.

[0192] At least a portion of the transparent conductive polymer layer 100 may be disposed in a via formed in the first insulating layer INS1. At least a portion of the transparent conductive polymer layer 100 may be disposed in each of the first contact hole CH1 and the second contact hole CH2. The transparent conductive polymer layer 100 may comprise a transparent conductive polymer and thus be conductive, such that the first electrode ELT1 and the second electrode ELT2 may be electrically connected to the transparent conductive polymer layer 100 through the first contact hole CH1 and the second contact hole CH2, respectively.

[0193] Reference Figure 12 Photolithography, developing process, and etching process can be performed on the transparent conductive polymer layer 100. Although not shown in the figures, a photoresist layer including a photosensitive material can be applied to the transparent conductive polymer layer 100.

[0194] During the photolithography and development processes of the transparent conductive polymer layer 100, a first mask 200 comprising a first-first mask region 200a and a first-second mask region 200b can be used. The transmittance of the first mask 200 in the first-first mask region 200a may be less than the transmittance of the first mask 200 in the first-second mask region 200b. In an embodiment, the first-first mask region 200a may be a half-tone area, and the first-second mask region 200b may be a full-tone area.

[0195] When performing a photolithography process, the first-1 mask region 200a can be superimposed on the first contact electrode CNE1 and / or the second contact electrode CNE2 in a planar view. The first-2 mask region 200b can be superimposed on the embankment pattern BNP in a planar view.

[0196] Due to the difference in transmittance between the first-1 mask region 200a and the first-2 mask region 200b of the first mask 200, the amount of photoresist layer that can be removed can vary depending on the region of the first mask 200. Therefore, after the photolithography process has been performed, the thickness of the photoresist layer in the region corresponding to the first contact electrode CNE1 and the second contact electrode CNE2 can be different from the thickness of the photoresist layer in the region corresponding to the embankment pattern BNP.

[0197] Subsequently, after the photolithography process has been performed, a photoresist layer with different thicknesses in at least some regions can be used as an etching mask to etch the transparent conductive polymer layer 100. If the etching process is performed, at least a portion of the transparent conductive polymer layer 100 can be removed, allowing the formation of a dam pattern BNP and a first contact electrode CNE1 and a second contact electrode CNE2, wherein the thickness of the dam pattern BNP can be greater than the thickness of the first contact electrode CNE1 and the second contact electrode CNE2.

[0198] The dam pattern BNP and the first contact electrode CNE1 and the second contact electrode CNE2 can be formed using the same process (same process). Alternatively, the dam pattern BNP and the first contact electrode CNE1 and the second contact electrode CNE2 can be formed simultaneously. Therefore, compared to the case where the dam pattern BNP and the first contact electrode CNE1 and the second contact electrode CNE2 can be formed using separate processes, in the disclosed embodiments, processes can be omitted, and the number of masks that may be required can be reduced, thereby lowering process (processing) costs.

[0199] Reference Figure 13 A light-emitting element (LD) can be disposed on the first contact electrode CNE1 and the second contact electrode CNE2. (Refer to the above.) Figure 7As described, one end of the light-emitting element LD can be electrically connected to the first contact electrode CNE1, while the other end of the light-emitting element LD can be electrically connected to the second contact electrode CNE2.

[0200] A second insulating layer INS2 can be formed on the embankment pattern BNP, the first contact electrode CNE1, the second contact electrode CNE2, and the light-emitting element LD. (See reference...) Figure 7 As described, the second insulating layer INS2 can reduce external influences on the display element layer DPL (in particular, the light-emitting element LD).

[0201] In the following text, reference will be made to Figures 14 to 18 A display device and a method of manufacturing the display device according to embodiments are described. Regarding the embodiments, descriptions that are repeated in the above embodiments can be simplified.

[0202] Figures 14 to 18 This is a cross-sectional view illustrating a method of manufacturing a display device according to a disclosed embodiment. In the following text, references may be simplified or omitted. Figures 10 to 13 The description is a repetitive description.

[0203] Reference Figure 14 A substrate layer (BSL) and a pixel circuit layer (PCL) disposed on the substrate layer (BSL) can be fabricated. A first electrode (ELT1) and a second electrode (ELT2) can be disposed on the pixel circuit layer (PCL).

[0204] Reference Figure 15 A light-emitting element LD can be disposed on a first insulating layer INS1. An opening (e.g., a recess) can be provided in the first insulating layer INS1 such that at least a portion of the rear surface of the light-emitting element LD is not in physical contact with the first insulating layer INS1. If the light-emitting element LD is disposed on the first insulating layer INS1, then a third insulating layer INS3 can be disposed on the light-emitting element LD. A third insulating layer INS3 can be disposed on the light-emitting element LD such that the first end of the light-emitting element LD and its second end opposite to the first end can be open. (Refer to the above...) Figure 8 As described, in some embodiments, at least a portion of the third insulating layer INS3 may be disposed in an opening of the first insulating layer INS1.

[0205] Reference Figure 16A transparent conductive polymer layer 100 can be formed on the first insulating layer INS1. The transparent conductive polymer layer 100 can be configured to cover at least the light-emitting element LD and the third insulating layer INS3. The transparent conductive polymer layer 100 can comprise at least a transparent conductive polymer having light transmittance and conductivity. At least a portion of the transparent conductive polymer layer 100 can be disposed in each of the first contact hole CH1 and the second contact hole CH2 that can be formed in the first insulating layer INS1. Therefore, the transparent conductive polymer layer 100 can be electrically connected to the first electrode ELT1 and the second electrode ELT2.

[0206] Reference Figure 17 After the transparent conductive polymer layer 100 has been formed, photolithography, development, and etching processes can be performed on the formed transparent conductive polymer layer 100. Although not shown in the figures, a photoresist layer can be provided (e.g., placed). During the photolithography and development processes of the transparent conductive polymer layer 100, a second mask 300 including a second mask region 300a can be used.

[0207] The intensity of light that has passed through the second mask region 300a of the second mask 300 can be less than the intensity of the incident light. The transmittance of the second mask region 300a of the second mask 300 can be greater than the transmittance of the regions of the second mask 300 other than the second mask region 300a. For example, the second mask region 300a can be a halftone region.

[0208] When performing a photolithography process, the second mask region 300a of the second mask 300 can be stacked with the first contact electrode CNE1 and / or the second contact electrode CNE2. In a plan view, the region where the first contact electrode CNE1 can be disposed and the region where the second contact electrode CNE2 can be disposed can be disposed in the second mask region 300a. Therefore, the thickness of the portion of the photoresist layer corresponding to the second mask region 300a can be different from the thickness of the portion of the photoresist layer not corresponding to the second mask region 300a, and the photoresist layer can be used as an etching mask to etch the transparent conductive polymer layer 100, at least a portion of the photoresist layer can be removed during the photolithography process. If an etching process is performed, then the first contact electrode CNE1 and the second contact electrode CNE2 can be disposed.

[0209] Reference Figure 18A second insulating layer INS2 can be disposed on the first insulating layer INS1 and the first contact electrode CNE1. At least a portion of the second insulating layer INS2 can be disposed on the light-emitting element LD and located between the first contact electrode CNE1 and the second contact electrode CNE2. After the first insulating layer INS1 has been disposed, a fourth insulating layer INS4 can be disposed on the first insulating layer INS1, the second insulating layer INS2, and the second contact electrode CNE2. Although Figure 18 It is shown that at least a portion of the second insulating layer INS2 may be disposed between the first contact electrode CNE1 and the second contact electrode CNE2 and on the first contact electrode CNE1, and a fourth insulating layer INS4 may be disposed on the second insulating layer INS2, but the disclosure is not limited thereto. In some embodiments, at least a portion of the fourth insulating layer INS4 may be disposed between the first contact electrode CNE1 and the second contact electrode CNE2 and on the second contact electrode CNE2, and the second insulating layer INS2 may be disposed on the fourth insulating layer INS4.

[0210] Therefore, in the display device according to the embodiment, the first contact electrode CNE1 and the second contact electrode CNE2 can be formed using the same process. Furthermore, the first contact electrode CNE1 and the second contact electrode CNE2 can be formed using the same process as the process for the embankment pattern BNP. This implies that the process can be simplified or some processes can be omitted, thereby reducing the cost required to manufacture the display device according to the embodiment.

[0211] The various embodiments disclosed may provide a display device and a method for manufacturing the display device that can reduce process costs.

[0212] The effects of disclosure may not be limited to the above, and those skilled in the art may make decisions based on the appendix. Figure 1 The other effects of the disclosure will be clearly understood by providing the information.

[0213] Although the disclosed embodiments have been described for illustrative purposes, those skilled in the art will understand that various modifications, additions, and substitutions are possible without departing from the scope and spirit of the disclosure. For example, the disclosed embodiments described above can be implemented individually or in combination.

[0214] Therefore, the embodiments disclosed herein are not intended to limit the spirit of the disclosed technology, but rather to describe it, and the scope of the disclosure is not limited to the embodiments. The scope of the disclosure should be interpreted by the appended claims, including their equivalents.

Claims

1. A display device, the display device comprising: Base; as well as A display element layer is disposed on the substrate and includes a light-emitting element that emits light in the display direction, wherein, The display element layer includes: a first contact electrode electrically connected to the light-emitting element; a second contact electrode electrically connected to the light-emitting element; and a dam pattern having a shape extending in the display direction. The light-emitting element is disposed on the first contact electrode and the second contact electrode, and the first contact electrode, the second contact electrode and the embankment pattern are all formed of transparent conductive polymers with the same composition ratio.

2. The display device according to claim 1, wherein, The first contact electrode and the second contact electrode are disposed between the substrate and the light-emitting element.

3. The display device according to claim 1, further comprising: The first electrode is electrically connected to the first contact electrode through the first contact hole; as well as The second electrode is electrically connected to the second contact electrode through the second contact hole.

4. The display device according to claim 3, further comprising: A first insulating layer is disposed on the first electrode and the second electrode, wherein... The first contact hole and the second contact hole are disposed in the first insulating layer, and The first contact electrode, the second contact electrode, and the embankment pattern are disposed on the first insulating layer.

5. The display device according to claim 1, wherein, The transparent conductive polymer includes at least one of poly(3,4-ethylenedioxythiophene): polystyrene sulfonate, polyacetylene, polypyrrole, polythiophene, poly(p-phenylene), poly(3,4-ethylenedioxythiophene), polyphenylene sulfide, poly(p-phenylene vinylene), and polyaniline.

6. The display device according to claim 5, wherein, The transparent conductive polymer further includes at least one of dimethyl sulfoxide, N-methylpyrrolidone, ethylene glycol, methanol, ethanol, and isopropanol.

Images