阵列基板及其制备方法、显示面板
By employing a multilayer structure with different doping factors in the active layer design of the array substrate, the problem of low fabrication efficiency caused by multiple doping is solved, resulting in a more efficient fabrication process and reduced costs.
CN114203736BActive Publication Date: 2026-07-17WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
- Filing Date
- 2021-12-13
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
Existing display devices suffer from low fabrication efficiency and high cost due to the need for multiple doping processes in low-temperature polycrystalline silicon thin-film transistors.
Method used
An array substrate design is adopted, wherein the active layer includes at least two active layers with different doping factors. By sequentially doping different doping factors when forming the active layer, the number of doping times and ion implantation processes are reduced, thus forming an active layer including a first active layer and a second active layer.
Benefits of technology
This improves the fabrication efficiency of array substrates, reduces ion implantation and additional exposure processes, and lowers costs.
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Smart Images
Figure CN114203736B_ABST
Abstract
本申请提供一种阵列基板及其制备方法、显示面板；该阵列基板通过使有源层至少包括第一有源层和第二有源层，则在形成有源层时，可以依次向有源层中掺杂不同的掺杂因子，形成至少包括第一有源层和第二有源层的有源层，则减少了有源层的掺杂次数，且减少了离子植入和额外的曝光工艺，提高了阵列基板的制备效率。
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