image sensor

Abstract

Disclosed is an image sensor including: a substrate including a plurality of pixel groups each including a plurality of pixel regions; a plurality of color filters arranged two-dimensionally on a first surface of the substrate; and a pixel separation structure located in the substrate. The pixel separation structure includes: a first portion defining each of the pixel regions; and a second portion connected to the first portion. The second portion passes through an inside of each of the pixel regions.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2020-0120814, filed on September 18, 2020, with the Korean Intellectual Property Office, the entire disclosure of which is incorporated herein by reference. Technical Field

[0002] The inventive concept relates to an image sensor, and more specifically, to an image sensor capable of performing autofocus (AF) operation. Background Technology

[0003] Image sensors convert photonic images into electrical signals. Recent advancements in the computer and / or communications industries have created a strong demand for high-performance image sensors in a wide range of consumer electronics devices, such as digital cameras, camcorders, PCS (personal communication systems), game consoles, security cameras, and medical miniature cameras.

[0004] Image sensors are classified as charge-coupled devices (CCD) or CMOS image sensors. CMOS image sensors have a simple operating method, and because the signal processing circuitry of a CMOS image sensor is integrated into a single chip, the size of CMOS image sensor products can be reduced and minimized. Optionally or additionally, CMOS image sensors require or use relatively low power consumption, which is useful in battery-powered applications. Optionally or additionally, because the process technology used to manufacture or produce CMOS image sensors is compatible with CMOS process technology, manufacturing costs can be reduced. Therefore, due to technological advancements and the achievement of high resolution, the use of CMOS image sensors has increased rapidly. Summary of the Invention

[0005] Some exemplary embodiments of the inventive concept provide an image sensor with improved optical and electrical properties.

[0006] The purpose of the inventive concept is not limited to the above. Other purposes not mentioned above will be clearly understood by those skilled in the art through the following description.

[0007] According to some example embodiments of the inventive concept, an image sensor may include: a substrate including a plurality of pixel groups, each of the plurality of pixel groups including a plurality of pixel regions; a plurality of color filters arranged two-dimensionally on a first surface of the substrate; and a pixel separation structure located in the substrate. The pixel separation structure includes: a first portion defining each of the plurality of pixel regions; and a second portion connected to the first portion and extending through the interior of each of the plurality of pixel regions. The plurality of color filters includes: a pair of first color filters transparent to a first light, one of the pair of first color filters being separated from the other of the pair of first color filters; a second color filter transparent to a second light and contacting one side surface of one of the pair of first color filters and one side surface of the other of the pair of first color filters; and a third color filter transparent to a third light and contacting the other side surface of one of the pair of first color filters and the other side surface of the other of the pair of first color filters. Each of the pixel groups includes a first pixel region, a second pixel region, a third pixel region adjacent to the first pixel region and the second pixel region, and a fourth pixel region adjacent to the first pixel region and the second pixel region. The second portion of any two pixel regions of the pixel separation structure located in the first pixel region to the fourth pixel region extends in a first direction parallel to the first surface of the substrate, and the second portion of the other two pixel regions of the pixel separation structure located in the first pixel region to the fourth pixel region extends in a second direction intersecting the first direction.

[0008] According to some example embodiments of the inventive concept, an image sensor may include: a substrate including a first pixel group, a second pixel group, a third pixel group, and a fourth pixel group, each of the first to fourth pixel groups including a first pixel region, a second pixel region, a third pixel region adjacent to the first and second pixel regions, and a fourth pixel region adjacent to the first and second pixel regions; a plurality of color filters arranged two-dimensionally on a first surface of the substrate; and a pixel separation structure located in the substrate. The pixel separation structure includes: a first portion defining each of the first to fourth pixel regions; and a second portion connected to the first portion and extending through the interior of each of the first to fourth pixel regions. The plurality of color filters includes: a pair of first color filters transparent to a first light, one of the first color filters being separated from the other of the pair of first color filters; a second color filter transparent to a second light and contacting one side surface of one of the first color filters and one side surface of the other of the pair of first color filters; and a third color filter transparent to a third light and contacting another side surface of one of the first color filters and another side surface of the other of the pair of first color filters. Each of the plurality of color filters extends horizontally and covers the first pixel region to the fourth pixel region. The second portion of any two pixel regions of the pixel separation structure located in the first pixel region to the fourth pixel region extends in a first direction parallel to the first surface of the substrate, and the second portion of the other two pixel regions of the pixel separation structure located in the first pixel region to the fourth pixel region extends in a second direction intersecting the first direction.

[0009] According to some example embodiments of the inventive concept, an image sensor may include: a substrate including a first pixel group, a second pixel group, a third pixel group, and a fourth pixel group, each of the first to fourth pixel groups including a first pixel region, a second pixel region, a third pixel region adjacent to the first and second pixel regions, and a fourth pixel region adjacent to the first and second pixel regions; a plurality of color filters arranged two-dimensionally on a first surface of the substrate; and a pixel separation structure located in the substrate. The pixel separation structure includes: a first portion defining each of the first to fourth pixel regions; and a second portion connected to the first portion and extending through the interior of each of the first to fourth pixel regions. The plurality of color filters includes: a pair of first color filters transparent to a first light, one of the first color filters being separated from the other of the pair of first color filters; a second color filter transparent to a second light and contacting one side surface of one of the first color filters and one side surface of the other of the pair of first color filters; and a third color filter transparent to a third light and contacting the other side surface of one of the first color filters and the other side surface of the other of the pair of first color filters. Each of the plurality of color filters extends horizontally and covers the first pixel region to the fourth pixel region, and the second portion of the pixel separation structure in each of the first pixel region to the fourth pixel region is parallel to one of a first direction and a second direction intersecting the first direction, the first direction being parallel to the first surface of the substrate. Attached Figure Description

[0010] Figure 1 A plan view is shown, illustrating an image sensor according to some example embodiments of the inventive concept.

[0011] Figure 2A An enlarged plan view is shown, which shows Figure 1 Part A.

[0012] Figure 2B A floor plan is shown, which illustrates... Figure 2A One of the pixel groups depicted in the image.

[0013] Figure 3A It shows along Figure 2A A sectional view taken from line I-I'.

[0014] Figure 3B It shows along Figure 2A The cross-sectional view taken by line I-I' shows an image sensor according to some example embodiments of the inventive concept.

[0015] Figure 3C It shows along Figure 2AThe cross-sectional view taken by line I-I' shows an image sensor according to some example embodiments of the inventive concept.

[0016] Figure 4A It shows Figure 1 The diagram depicts a plan view of portion A, which illustrates an image sensor according to some example embodiments of the inventive concept.

[0017] Figure 4B A floor plan is shown, which illustrates... Figure 4A One of the pixel groups depicted in the image.

[0018] Figure 5A It shows Figure 1 The diagram depicts a plan view of portion A, which illustrates an image sensor according to some example embodiments of the inventive concept.

[0019] Figure 5B A floor plan is shown, which illustrates... Figure 5A One of the pixel groups depicted in the image.

[0020] Figure 6 It shows Figure 1 The diagram depicts a plan view of portion A, which illustrates an image sensor according to some example embodiments of the inventive concept.

[0021] Figure 7 It shows along Figure 6 The sectional view taken from line II-II'.

[0022] Figure 8 and Figure 9 It shows Figure 1 The diagram depicts a plan view of portion A, which illustrates an image sensor according to some example embodiments of the inventive concept.

[0023] Figure 10 It shows Figure 1 The diagram depicts a plan view of portion A, which illustrates an image sensor according to some example embodiments of the inventive concept.

[0024] Figure 11 It shows along Figure 10 The sectional view taken from line III-III'.

[0025] Figure 12 and Figure 13 It shows Figure 1 The diagram depicts a plan view of portion A, which illustrates an image sensor according to some example embodiments of the inventive concept. Detailed Implementation

[0026] In this specification, the same reference numerals may indicate the same components. An image sensor according to some exemplary embodiments of the inventive concept will now be described.

[0027] Figure 1 A plan view is shown, illustrating an image sensor according to some example embodiments of the inventive concept. Figure 2A An enlarged plan view is shown, which shows Figure 1 Part A. Figure 3A It shows along Figure 2A A sectional view taken from line I-I'. Figure 3B It shows along Figure 2A The cross-sectional view taken by line I-I' shows an image sensor according to some example embodiments of the inventive concept. Figure 3C It shows along Figure 2A The cross-sectional view taken by line I-I' shows an image sensor according to some example embodiments of the inventive concept.

[0028] Reference Figure 1 When viewed in a plan view, the substrate 100 may include a pixel array region AR, an optical black region OB, and a pad region PAD. When viewed in a plan view, the pixel array region AR may be located at the center of the substrate 100. The pixel array region AR may include multiple pixel regions PX. Pixel regions PX can output photoelectric signals through incident light. Pixel regions PX may be arranged in two dimensions, in columns and rows. Rows may extend in a first direction D1, for example, arranged in the first direction D1. Columns may extend in a second direction D2, for example, arranged in the second direction D2. In this specification, the first direction D1 may be parallel to the first surface 100a of the substrate 100. The second direction D2 may be parallel to the first surface 100a of the substrate 100 and may intersect with the first direction D1. For example, the second direction D2 may be orthogonal or substantially orthogonal to the first direction D1, for example, perpendicular to the first direction D1. The third direction D3 may be perpendicular or substantially perpendicular to the first surface 100a of the substrate 100.

[0029] A pad region PAD can be disposed on the edge portion of the substrate 100 and can surround the pixel array region AR when viewed in a plan view. A second pad terminal 83 can be disposed on the pad region PAD. The second pad terminal 83 can externally output electrical signals generated from the pixel region PX. Optionally or additionally, external electrical signals and / or voltages can be transmitted to the pixel region PX through the second pad terminal 83. Since the pad region PAD is disposed on the edge portion of the substrate 100, the second pad terminal 83 can be easily coupled externally.

[0030] An optical black area OB can be positioned between the pixel array region AR and the pad region PAD of the substrate 100. When viewed in a planar view, the optical black area OB can surround the pixel array region AR. The optical black area OB can include multiple dummy pixel regions DPX. The dummy pixel regions DPX can be, or may correspond to, the region that generates a signal used as information to remove subsequent process noise. (Refer to the following...) Figures 2A to 3C The pixel array region AR of the image sensor will be discussed in further detail.

[0031] Reference Figure 2A and Figure 3A An image sensor according to some example embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120.

[0032] The substrate 100 may have a first surface 100a (e.g., a rear surface) and a second surface 100b (e.g., a front surface) that are opposite to each other (e.g., facing each other). The substrate 100 may receive light incident on the first surface 100a. A wiring layer 20 may be disposed on the second surface 100b of the substrate 100, and an optical transmission layer 30 may be disposed on the first surface 100a of the substrate 100. The substrate 100 may be a semiconductor substrate or a silicon-on-insulator (SOI) substrate. The semiconductor substrate may be or include, for example, a silicon substrate, a germanium substrate, and / or a silicon-germanium substrate, and may be a single-crystal substrate. The substrate 100 may be lightly doped and may include a first conductivity type impurity. For example, the first conductivity type impurity may include one or more p-type impurities such as aluminum (Al), boron (B), indium (In), and gallium (Ga).

[0033] The substrate 100 may include a plurality of pixel groups PG. Each of the pixel groups PG may be arranged in a repeating matrix shape along a first direction D1 and a second direction D2 that intersect each other. Each of the pixel groups PG may include a plurality of pixel regions PX1, PX2, PX3, and PX4 defined by the pixel separation structure 120. Each of the pixel groups PG may have only four pixel regions; however, the example embodiment is not limited thereto. For example, the plurality of pixel regions PX1, PX2, PX3, and PX4 may include a first pixel region PX1, a second pixel region PX2, a third pixel region PX3, and a fourth pixel region PX4. The first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4 may be separated from each other and the pixel separation structure 120 is positioned between the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4. When viewed in a planar diagram, the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4 of each pixel group PG can be arranged in a 2x2 configuration. For example, the first pixel region PX1 and the third pixel region PX3 can be aligned in a first direction D1, and the first pixel region PX1 and the fourth pixel region PX4 can be aligned in a second direction D2. The first pixel region PX1 and the second pixel region PX2 may not be aligned in the first direction D1 and the second direction D2. The first pixel region PX1 can be arranged diagonally (e.g., diagonally opposite) to the second pixel region PX2, and the third pixel region PX3 can be arranged diagonally (e.g., diagonally opposite) to the fourth pixel region PX4. For example, the second pixel region PX2 and the third pixel region PX3 can be aligned in the second direction D2 and can share a common boundary, while the second pixel region PX2 and the fourth pixel region PX4 can be aligned in the first direction D1 and can share a common boundary. Each of the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4 may have a width W1 of about 1 μm (e.g., 1 μm) to about 1.4 μm (e.g., 1.4 μm) in the first direction D1, and may have the same width or may have different widths; however, the example embodiment is not limited thereto. For ease of description, a single pixel group PG will be explained below.

[0034] The substrate 100 may include a first photoelectric conversion region 110a, a second photoelectric conversion region 110b, a third photoelectric conversion region 110c, and a fourth photoelectric conversion region 110d. The first photoelectric conversion region 110a, the second photoelectric conversion region 110b, the third photoelectric conversion region 110c, and the fourth photoelectric conversion region 110d may be disposed within a first pixel region PX1, a second pixel region PX2, a third pixel region PX3, and a fourth pixel region PX4. For example, at least one selected from the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4 may include the first photoelectric conversion region 110a and the second photoelectric conversion region 110b, but may not include the third photoelectric conversion region 110c or the fourth photoelectric conversion region 110d. Optionally or additionally, at least one selected from the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d, but may not include the first photoelectric conversion region 110a or the second photoelectric conversion region 110b. The first photoelectric conversion region 110a and / or the second photoelectric conversion region 110b can detect the phase difference of light incident at different points along the first direction D1. Signals output from the first photoelectric conversion region 110a and the second photoelectric conversion region 110b can be compared with each other to calculate an autofocus signal for controlling or controlling the position of the lens. The third photoelectric conversion region 110c and / or the fourth photoelectric conversion region 110d can detect the phase difference of light incident at different points along the second direction D2. Signals output from the third photoelectric conversion region 110c and / or the fourth photoelectric conversion region 110d can be compared with each other to calculate an autofocus signal for controlling or controlling the position of the lens.

[0035] The first photoelectric conversion region 110a, the second photoelectric conversion region 110b, the third photoelectric conversion region 110c, and the fourth photoelectric conversion region 110d may all be or correspond to regions having or being doped with a second conductivity type impurity. The second conductivity type impurity may have a conductivity type opposite to that of the first conductivity type impurity. The second conductivity type impurity may include one or more n-type impurities such as phosphorus, arsenic, bismuth, and antimony. Each of the one or more impurities may have the same or different concentrations and / or distributions. The first photoelectric conversion region 110a, the second photoelectric conversion region 110b, the third photoelectric conversion region 110c, and the fourth photoelectric conversion region 110d may be adjacent to the first surface 100a of the substrate 100. For example, the first photoelectric conversion region 110a, the second photoelectric conversion region 110b, the third photoelectric conversion region 110c, and the fourth photoelectric conversion region 110d may be closer to the first surface 100a than to the second surface 100b. Each of the photoelectric conversion regions may include a first region adjacent to the first surface 100a and a second region adjacent to the second surface 100b. The photoelectric conversion region may have a difference in impurity concentration (a decrease in impurity concentration) between the first region and the second region. Therefore, the photoelectric conversion region may have a potential slope (potential gradient) between the first surface 100a and the second surface 100b of the substrate 100. Optionally or additionally, the photoelectric conversion region may not have a potential slope between the first surface 100a and the second surface 100b of the substrate 100; for example, it may have a uniform impurity concentration.

[0036] The substrate 100 and each of the first photoelectric conversion regions 110a, 110b, 110c, and 110d can constitute or correspond to a photodiode. For example, the photodiode can be formed by a pn junction between the substrate 100 having a first conductivity type and each of the first photoelectric conversion regions 110a, 110b, 110c, and 110d having a second conductivity type, or corresponding to a pn junction between the substrate 100 having a first conductivity type and each of the first photoelectric conversion regions 110a, 110b, 110c, and 110d having a second conductivity type, or formed by a pn junction between the substrate 100 having a first conductivity type and each of the first photoelectric conversion regions 110a, 110b, 110c, and 110d having a second conductivity type, or formed by a pn junction between the substrate 100 having a first conductivity type and each of the first photoelectric conversion regions 110a, 110b, 110c, and 110d having a second conductivity type. The first photoelectric conversion region 110a, the second photoelectric conversion region 110b, the third photoelectric conversion region 110c, and the fourth photoelectric conversion region 110d, which constitute or correspond to the photodiode, can generate and / or accumulate photocharge proportional to the intensity of the incident light.

[0037] Each of the first pixel regions PX1 to the fourth pixel regions PX4 may include a dummy impurity region 130 between the second surface 100b of the substrate 100 and the second portion 123 of the pixel separation structure 120. The dummy impurity region 130 may be formed by doping the substrate 100 with an impurity having the same conductivity type as the substrate 100 (e.g., p-type) (e.g., by ion implantation). The concentration of impurities in the dummy impurity region 130 having the same conductivity type as the substrate may be greater than the concentration of impurities in the substrate; however, the exemplary embodiments are not limited thereto. The dummy impurity region 130 may form or contribute to the formation of a barrier to split incident light into two or more beams provided to the first photoelectric conversion region 110a and the second photoelectric conversion region 110b, or the third photoelectric conversion region 110c and the fourth photoelectric conversion region 110d.

[0038] Still refer to Figure 2A and Figure 3A The pixel separation structure 120 may be disposed in the substrate 100. The pixel separation structure 120 may include one or more of the following: silicon oxide, silicon nitride, silicon oxynitride, doped or undoped polycrystalline silicon, amorphous silicon, and metal. The metal may include, for example, tungsten.

[0039] The first portion 121 of the pixel separation structure 120 may define a first pixel region PX1, a second pixel region PX2, a third pixel region PX3, and a fourth pixel region PX4. When viewed in a planar view, the first portion 121 of the pixel separation structure 120 may be interposed between the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4. When viewed in a plane, the first portion 121 of the pixel separation structure 120 may have a grid and / or lattice structure. The first portion 121 of the pixel separation structure 120 may surround (e.g., may completely surround) each of the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4. The first portion 121 of the pixel separation structure 120 may be disposed in a first trench TR1, which may be recessed from the first surface 100a of the substrate 100. The first portion 121 of the pixel separation structure 120 can extend from the first surface 100a of the substrate 100 toward the second surface 100b, for example, it can extend the thickness of the substrate in a third direction D3. The first portion 121 of the pixel separation structure 120 can be, or can correspond to, a deep trench isolation layer. The first portion 121 of the pixel separation structure 120 can penetrate the substrate 100. That is, the first surface 121a of the first portion 121 of the pixel separation structure 120 can be in the same plane as the first surface 100a of the substrate 100, and the second surface 121b of the first portion 121 of the pixel separation structure 120 can be in the same plane as the second surface 100b of the substrate 100. The first portion 121 of the pixel separation structure 120 can have a vertical height H1 that is substantially the same as the vertical thickness of the substrate 100. For example, the first portion 121 of the pixel separation structure 120 may have a width in the first direction D1 that gradually decreases (e.g., gradually tapers) as the first portion 121 approaches the second surface 100b from the first surface 100a of the substrate 100. The first portion 121 of the pixel separation structure 120 may fill the first trench TR1 and may include one or more of, for example, silicon oxide, silicon nitride, silicon oxynitride, doped or undoped polycrystalline silicon, amorphous silicon, and metals. The metal may include, for example, tungsten.

[0040] Optionally or additionally, according to some example embodiments, the first portion 121 of the pixel separation structure 120 may penetrate a portion of the substrate 100, for example, it may extend only a portion of the thickness of the substrate 100. For example, the first portion 121 may have a bottom surface separated from the second surface 100b of the substrate 100, and the bottom surface may be located within the substrate 100 (e.g., at a level higher than the level of the second surface 100b of the substrate 100). In this case, a dummy impurity region may be disposed between the bottom surface of the first portion 121 and the second surface 100b of the substrate 100. The dummy impurity region may be formed by implanting impurity ions having the same conductivity type as the substrate 100 (e.g., p-type). The dummy impurity region may be doped with impurities that are the same as or different from those in the dummy impurity region 130.

[0041] The second portion 123 of the pixel separation structure 120 may be disposed in the second trench TR2. The second trench TR2 may be recessed from the first surface 100a of the substrate 100. The second portion 123 may not extend along the entire thickness of the substrate 100.

[0042] The second portion 123 of the pixel separation structure 120 may extend vertically from the first surface 100a of the substrate 100 toward the second surface 100b. The first trench TR1 and the second trench TR2 may both be formed recessed from the first surface 100a of the substrate 100. The second portion 123 of the pixel separation structure 120 may penetrate a portion of the substrate 100 (e.g., it may not extend along the entire thickness of the substrate 100). The second portion 123 of the pixel separation structure 120 may have a bottom surface 123b separated from the second surface 100b of the substrate 100. The bottom surface 123b of the second portion 123 included in the pixel separation structure 120 may be located within the substrate 100 (e.g., at a level higher than the level of the second surface 100b of the substrate 100). The second portion 123 of the pixel separation structure 120 may have a vertical height H2 smaller than the vertical height H1 of the first portion 121.

[0043] Reference Figure 3BAccording to some example embodiments, the first portion 121 of the pixel separation structure 120 may have a width in the first direction D1 that gradually decreases (e.g., gradually tapers) as the first portion 121 approaches the first surface 100a from the second surface 100b of the substrate 100. The first portion 121 of the pixel separation structure 120 may be disposed in a first trench TR1, which may be recessed from the second surface 100b of the substrate 100. The first portion 121 of the pixel separation structure 120 may extend from the second surface 100b of the substrate 100 toward the first surface 100a. The first portion 121 may include, for example, one or more of silicon oxide, silicon nitride, silicon oxynitride, doped or undoped polycrystalline silicon, amorphous silicon, and metals. The metal may include, for example, tungsten. The first portion 121 may include multiple layers comprising or composed of different materials or a single layer, but the inventive concept is not limited thereto.

[0044] The second portion 123 of the pixel separation structure 120 may be disposed in the second trench TR2. For example, the first trench TR1 may be formed to be recessed from the second surface 100b of the substrate 100, and the second trench TR2 may be formed to be recessed from the first surface 100a of the substrate 100.

[0045] Reference Figure 3C According to some example embodiments, the first trench TR1 and the second trench TR2 may both be formed to be recessed from the second surface 100b of the substrate 100. The first portion 121 of the pixel separation structure 120 may have a width in the first direction D1 that gradually decreases (e.g., gradually thins) as the first portion 121 approaches the first surface 100a from the second surface 100b of the substrate 100. The first portion 121 of the pixel separation structure 120 may be disposed in the first trench TR1 and may extend from the second surface 100b of the substrate 100 toward the first surface 100a.

[0046] A second portion 123 of the pixel separation structure 120 may be disposed in the second trench TR2. The second portion 123 of the pixel separation structure 120 may extend vertically from the second surface 100b of the substrate 100 toward the first surface 100a. The second portion 123 of the pixel separation structure 120 may penetrate a portion of the substrate 100 (e.g., it may not extend along the entire thickness of the substrate 100). The second portion 123 of the pixel separation structure 120 may have a top surface 123a separated from the first surface 100a of the substrate 100. For example, the top surface 123a of the second portion 123 included in the pixel separation structure 120 may be disposed between the first surface 100a and the second surface 100b of the substrate 100. This example embodiment is not limited thereto. Figures 3A to 3C Each of these terms does not imply mutual exclusion. For example, a CMOS image sensor according to some example embodiments may have... Figure 3A Some characteristics Figure 3B Some features and Figure 3C Some features. For example, some example embodiments may have a dummy impurity region 130 near the first surface 100a of the substrate 100, and the first portion 121 of the pixel separation structure 120 may have a width that decreases from the first surface 100a to the second surface 100b (e.g., it may gradually taper from the first surface 100a to the second surface 100b).

[0047] When viewed in a planar view, the pixel separation structure 120 can be configured such that the second portion 123 can connect to the first portion 121 and pass through the interior of each of the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4. The second portion 123 of the pixel separation structure 120 can be interposed between the first photoelectric conversion region 110a and the second photoelectric conversion region 110b, and between the third photoelectric conversion region 110c and the fourth photoelectric conversion region 110d. The planar arrangement of the second portion 123 of the pixel separation structure 120 will be discussed in further detail below.

[0048] Wiring layer 20 may include wiring dielectric layers 221, 222, and 223, via 211, and wiring 213. Wiring dielectric layers 221, 222, and 223 may include a first dielectric layer 221, a second dielectric layer 222, and a third dielectric layer 223. The first dielectric layer 221 may cover the second surface 100b of the substrate 100. The first dielectric layer 221 may be disposed between the wiring 213 and the second surface 100b of the substrate 100, thereby covering a gate electrode (not shown). The second dielectric layer 222 and the third dielectric layer 223 may be stacked on the first dielectric layer 221. The first dielectric layer 221, the second dielectric layer 222, and the third dielectric layer 223 may include non-conductive materials. For example, the first dielectric layer 221, the second dielectric layer 222, and the third dielectric layer 223 may include insulating materials such as silicon-based dielectric materials (such as one or more of silicon oxide, silicon nitride, and silicon oxynitride).

[0049] Wiring 213 can be disposed on the first dielectric layer 221. For example, wiring 213 can be disposed in the second dielectric layer 222 and the third dielectric layer 223 stacked on the second surface 100b of the substrate 100. Wiring 213 can be vertically connected to a transistor (not shown) through a via 211. Wiring layer 20 can perform signal processing on the electrical signals converted in the first photoelectric conversion region 110a, the second photoelectric conversion region 110b, the third photoelectric conversion region 110c, and the fourth photoelectric conversion region 110d. In some exemplary embodiments of the inventive concept, the arrangement of wiring 213 may not be based on the arrangement of the first photoelectric conversion region 110a, the second photoelectric conversion region 110b, the third photoelectric conversion region 110c, and the fourth photoelectric conversion region 110d. For example, when viewed in a plane, wiring 213 may span the first photoelectric conversion region 110a, the second photoelectric conversion region 110b, the third photoelectric conversion region 110c, and the fourth photoelectric conversion region 110d. Wiring 213 and via 211 may include one or more metallic materials such as copper (Cu), aluminum (Al) and tungsten (W).

[0050] The optical transmission layer 30 may include color filters CF1, CF2, and CF3, as well as microlenses 400. The optical transmission layer 30 can focus and / or filter external incident light, and the photoelectric conversion layer 10 can provide focused and filtered light.

[0051] Color filters CF1, CF2, and CF3, and microlens 400 may be disposed on the first surface 100a of the substrate 100. The color filters CF1, CF2, and CF3, and microlens 400 may each be configured to correspond to one of the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4. A dielectric layer (e.g., a planarization dielectric layer) 125 may be interposed between the first surface 100a of the substrate 100 and the color filters CF1, CF2, and CF3. The planarization dielectric layer 125 may include at least one selected from a bottom antireflective coating (BARC) layer, a fixed charge layer, an adhesive layer, and a protective layer. When the planarization dielectric layer 125 is used as a bottom antireflective coating (BARC) layer, the planarization dielectric layer 125 may prevent or reduce the amount or likelihood of light reflection to allow the first photoelectric conversion regions 110a to the fourth photoelectric conversion regions 110d to readily receive light incident on the first surface 100a of the substrate 100. The planarization dielectric layer 125 may include metal oxides (e.g., aluminum oxide and / or hafnium oxide) and / or silicon-based dielectrics (e.g., silicon oxide or silicon nitride), or may be composed of metal oxides (e.g., aluminum oxide and / or hafnium oxide) and / or silicon-based dielectrics (e.g., silicon oxide or silicon nitride).

[0052] Color filters CF1, CF2, and CF3 can each be set to correspond to one of the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4.

[0053] Color filters CF1, CF2, and CF3 may include a pair of first color filters CF1, a second color filter CF2 between the pair of first color filters CF1, and a third color filter CF3 between the pair of first color filters CF1. The pair of first color filters CF1 may be vertically stacked with each of the first pixel region PX1 and the second pixel region PX2. The pair of first color filters CF1 may be transparent to the first light. The pair of first color filters CF1 may be diagonally spaced from each other.

[0054] A second color filter CF2 can be disposed between a pair of first color filters CF1. For example, the second color filter CF2 can be adjacent to a side surface CF1a of one of the pair of first color filters CF1 and a side surface CF1d of the other of the pair of first color filters CF1. The second color filter CF2 can be vertically stacked with the third pixel region PX3. The second color filter CF2 can be transparent to a second light that is different from the first light.

[0055] A third color filter CF3 can be disposed between the pair of first color filters CF1. For example, the third color filter CF3 can be adjacent to the other side surface CF1b of one of the pair of first color filters CF1 and the other side surface CF1c of the other of the pair of first color filters CF1. The third color filter CF3 can be vertically stacked with the fourth pixel region PX4. The third color filter CF3 can be transparent to a third light that is different from both the first light and the second light.

[0056] Each of the color filters CF1, CF2, and CF3 may include one of a red color filter, a green color filter, and a blue color filter. For example, a pair of first color filters CF1 may be or include a green color filter, second color filter CF2 may be or include a red color filter, and third color filter CF3 may be or include a blue color filter. Therefore, the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4 may include a red pixel containing a red color filter, a blue pixel containing a blue color filter, and a green pixel containing a green color filter. The red pixel may be configured such that the red color filter allows red visible light to pass through it, and the photoelectric conversion component of the red pixel can generate photoelectrons corresponding to red visible light. The blue pixel may be configured such that the blue color filter allows blue visible light to pass through it, and the photoelectric conversion component of the blue pixel can generate photoelectrons corresponding to blue visible light. The green pixel may be configured such that the green color filter allows green visible light to pass through it, and the photoelectric conversion component of the green pixel can generate photoelectrons corresponding to green visible light. However, the example embodiments are not limited to the above-described color pixels. For example, color filters CF1, CF2, and CF3 may include a magenta color filter, a yellow color filter, and a cyan color filter.

[0057] For example, color filters CF1, CF2, and CF3 can be arranged in a Bayer pattern in which the number of green color filters is twice the number of red or blue color filters. In the Bayer pattern, the color filters CF1, CF2, and CF3, arranged in a 2x2 configuration, can constitute a single color filter group, correspond to a single color filter group, or be included in a single color filter group. A single color filter group can include two green color filters arranged diagonally (e.g., diagonally opposite each other), and also includes blue and red color filters arranged diagonally (e.g., diagonally opposite each other). For example, each of the red and blue color filters can be positioned between adjacent green color filters. The Bayer-patterned color filter group can be repeatedly arranged along a first direction D1 and a second direction D2.

[0058] The grid pattern 300 can be disposed between color filters CF1, CF2, and CF3. However, the exemplary embodiments are not limited thereto, and as... Figure 7 As shown, the grid pattern 300 can be disposed inside each of the color filters CF1, CF2, and CF3 (e.g., the grid pattern 300 can be disposed in the first color filter CF1 to correspond to the first portion 121 of the pixel separation structure 120). Similar to the first portion 121 of the pixel separation structure 120, the grid pattern 300 can have a grid or lattice shape when viewed in a plane. The grid pattern 300 can include a metallic material such as tungsten and / or aluminum. For example, the grid pattern 300 can have a two-layer structure including a tungsten layer and a tungsten nitride layer.

[0059] Microlenses 400 may be correspondingly disposed on the top surfaces of color filters CF1, CF2, and CF3. Microlenses 400 may be vertically stacked corresponding to the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4. Each of the microlenses 400 may be vertically stacked with either the first photoelectric conversion region 110a and the second photoelectric conversion region 110b, or the third photoelectric conversion region 110c and the fourth photoelectric conversion region 110d. Unlike those shown, the microlenses 400 may be separated from each other, but the inventive concept is not limited thereto. Microlenses 400 may be transparent to allow light to pass through them. Microlenses 400 may have their convex shapes to converge light incident on the first pixel region PX1, the second pixel region PX2, the third pixel region PX3, and the fourth pixel region PX4. Microlenses 400 may comprise organic materials. For example, microlenses 400 may comprise photoresist materials and / or thermosetting resins.

[0060] According to some example embodiments, when viewed in a plane, the pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX1 can be aligned in the second direction D2, and the second portion 123 disposed in the second pixel region PX2 can be aligned in the second direction D2. Each of the first pixel region PX1 and the second pixel region PX2 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. The first photoelectric conversion region 110a and the second photoelectric conversion region 110b may extend parallel to the second portion 123 and may have their principal axes in the second direction D2.

[0061] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the third pixel region PX3 can be aligned in the first direction D1, and the second portion 123 disposed in the fourth pixel region PX4 can be aligned in the first direction D1. Each of the third pixel region PX3 and the fourth pixel region PX4 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. The third photoelectric conversion region 110c and the fourth photoelectric conversion region 110d may extend parallel to the second portion 123 and may have their principal axes in the first direction D1.

[0062] The first photoelectric conversion region 110a and the second photoelectric conversion region 110b can realize phase difference detection for incident light. For example, the first pixel region PX1 and the second pixel region PX2, both including the first photoelectric conversion region 110a and the second photoelectric conversion region 110b, can calculate the phase difference of the light, and therefore can output a focus signal corresponding to the phase difference. The focus signal can be used to adjust the position of the lens included in a device including an image sensor according to some example embodiments. Therefore, the device can perform autofocus (AF) operation.

[0063] When, in addition to the first photoelectric conversion region 110a and the second photoelectric conversion region 110b, a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d are also included, as discussed in the inventive concept, not only can the phase difference of light incident at different points along the first direction D1 be calculated more accurately, but also the phase difference of light incident at different points along the second direction D2 can be calculated more accurately. Therefore, an image sensor with improved autofocus operation can be provided.

[0064] Figure 2B A floor plan is shown, which illustrates... Figure 2A One of the pixel groups depicted in the image.

[0065] Reference Figure 2B Multiple floating diffusion regions FD can be included in a substrate 100 disposed in a single pixel group PG. For example, the floating diffusion regions FD can be disposed in a single pixel group PG. The floating diffusion regions FD can all be regions doped / added to the substrate 100 by a second conductivity type impurity. The second conductivity type impurity can have a conductivity type opposite to that of the first conductivity type impurity. The second conductivity type impurity can include n-type impurities (such as one or more of phosphorus (P), arsenic (As), bismuth (Bi), and antimony (Sb)) at the same or different concentrations and at the same or different depths.

[0066] When viewed in a plane, the floating diffusion region FD can be configured to overlap with the corresponding boundaries among the boundaries between the first pixel region PX1 and the third pixel region PX3, the second pixel region PX2 and the third pixel region PX3, the second pixel region PX2 and the fourth pixel region PX4, and the fourth pixel region PX4 and the first pixel region PX1. For example, each of the floating diffusion regions FD can be configured to be vertically overlapped with the point where the first portion 121 of the pixel separation structure 120 connects to the second portion 123 of the pixel separation structure 120.

[0067] Multiple transfer gate patterns TG can be disposed within a single pixel group PG. The transfer gate patterns TG can include metal, metal silicide, doped or undoped polysilicon, or any combination thereof. When viewed in a planar view, the transfer gate patterns TG can be adjacent to a floating diffusion region FD. For example, a pair of transfer gate patterns TG can be adjacent to a single floating diffusion region FD. A single pixel region PX can include a pair of transfer gate patterns TG. Each of the pair of transfer gate patterns TG can be symmetrically disposed with respect to the second portion 123 of the pixel separation structure 120.

[0068] Figure 4A It shows Figure 1 The diagram depicts a plan view of portion A, illustrating an image sensor according to some example embodiments of the inventive concept. For the sake of brevity, repeated descriptions of the same features will be omitted, and the differences from the above will be discussed in detail.

[0069] Reference Figure 4A An image sensor according to some exemplary embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120. The substrate 100, wiring layer 20, and optical transmission layer 30 may be connected to a reference... Figures 2A to 3C The substrate 100, wiring layer 20 and optical transmission layer 30 discussed are the same or substantially the same.

[0070] According to some example embodiments, when viewed in a plane, the pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX1 can be aligned in the second direction D2, and the second portion 123 disposed in the third pixel region PX3 can also be aligned in the second direction D2. Each of the first pixel region PX1 and the third pixel region PX3 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. The first photoelectric conversion region 110a and the second photoelectric conversion region 110b may extend parallel to the second portion 123 and may have their principal axes in the second direction D2.

[0071] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the second pixel region PX2 can be aligned in the first direction D1, and the second portion 123 disposed in the fourth pixel region PX4 can also be aligned in the first direction D1. Each of the second pixel region PX2 and the fourth pixel region PX4 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. The third photoelectric conversion region 110c and the fourth photoelectric conversion region 110d may extend parallel to the second portion 123 and may have their principal axes in the first direction D1.

[0072] A pixel region having a color filter, such as a green color filter, can be more sensitive to incident light than a pixel region having a color filter, such as a red color filter and / or a blue color filter. According to some example embodiments, a first photoelectric conversion region 110a, a second photoelectric conversion region 110b, a third photoelectric conversion region 110c, and a fourth photoelectric conversion region 110d can be included in a first pixel region PX1 and a second pixel region PX2, each including either a first color filter CF1 or a green color filter. Therefore, the first pixel region PX1 and the second pixel region PX2, both having high sensitivity, can be used to calculate (e.g., accurately calculate) the phase difference of light in the first direction D1 and the phase difference of light in the second direction D2.

[0073] Figure 4B A floor plan is shown, which illustrates... Figure 4A One of the pixel groups depicted in the image.

[0074] Reference Figure 4B Multiple floating diffusion regions FD may be included in a substrate 100 disposed in a single pixel group PG. For example, three floating diffusion regions FD may be disposed in a single pixel group PG. The floating diffusion regions FD may all be regions in the substrate 100 that contain (e.g., doped and / or added to) a second conductivity type impurity. The second conductivity type impurity may have a conductivity type opposite to that of the first conductivity type impurity. The second conductivity type impurity may include one or more n-type impurities (such as phosphorus (P), arsenic (As), bismuth (Bi), and antimony (Sb)) having the same or different dopant concentrations and the same or different depths.

[0075] When viewed in a plane, the floating diffusion region FD can be configured to overlap with the corresponding boundaries of the boundaries between the first pixel region PX1 and the fourth pixel region PX4, the second pixel region PX2 and the third pixel region PX3, and the second pixel region PX2 and the fourth pixel region PX4. For example, each of the floating diffusion regions FD can be configured to be vertically overlapped with the point where the first portion 121 of the pixel separation structure 120 connects to the second portion 123 of the pixel separation structure 120.

[0076] Multiple transfer gate patterns TG can be disposed within a single pixel group PG. The transfer gate patterns TG can include metal, metal silicide, doped or undoped polysilicon, or any combination thereof. When viewed in a plane, the transfer gate patterns TG can be adjacent to a floating diffusion region FD. For example, a pair of transfer gate patterns TG can be adjacent to a floating diffusion region FD. A single pixel region PX can include a pair of transfer gate patterns TG. Each of the pair of transfer gate patterns TG can be symmetrically disposed with respect to the second portion 123 of the pixel separation structure 120. For example, a pair of transfer gate patterns TG on the second pixel region PX2 and a pair of transfer gate patterns TG on the fourth pixel region PX4 can be configured to surround a floating diffusion region FD adjacent to these two pairs of transfer gate patterns TG.

[0077] Figure 5A It shows Figure 1 The diagram depicts a plan view of portion A, illustrating an image sensor according to some example embodiments of the inventive concept. For the sake of brevity, repeated descriptions of the same features will be omitted, and the differences from the above will be discussed in detail.

[0078] Reference Figure 5A An image sensor according to some exemplary embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120. The substrate 100, wiring layer 20, and optical transmission layer 30 may be connected to a reference... Figures 2A to 3C The substrate 100, wiring layer 20 and optical transmission layer 30 discussed are the same or substantially the same.

[0079] According to some example embodiments, when viewed in a plane, the pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX1 can be aligned in the second direction D2, and the second portion 123 disposed in the fourth pixel region PX4 can be aligned in the second direction D2. Each of the first pixel region PX1 and the fourth pixel region PX4 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. The first photoelectric conversion region 110a and the second photoelectric conversion region 110b may extend parallel to the second portion 123 and may have their principal axes in the second direction D2.

[0080] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the second pixel region PX2 can be aligned in the first direction D1, and the second portion 123 disposed in the third pixel region PX3 can be aligned in the first direction D1. Each of the second pixel region PX2 and the third pixel region PX3 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. The third photoelectric conversion region 110c and the fourth photoelectric conversion region 110d may extend parallel to the second portion 123 and may have their principal axes in the first direction D1.

[0081] Figure 5B A floor plan is shown, which illustrates... Figure 5A One of the pixel groups depicted in the image.

[0082] Reference Figure 5B Multiple floating diffusion regions FD can be included in a substrate 100 disposed in a single pixel group PG. For example, three floating diffusion regions FD can be disposed in a single pixel group PG. The floating diffusion regions FD can all be regions in which a second conductivity type impurity is added (e.g., doped) into the substrate 100. The second conductivity type impurity can have a conductivity type opposite to that of the first conductivity type impurity. The second conductivity type impurity can include n-type impurities (such as one or more of phosphorus (P), arsenic (As), bismuth (Bi), and antimony (Sb)) having the same or different dopant concentrations and the same or different depths.

[0083] When viewed in a plane, the floating diffusion region FD can be configured to overlap with corresponding boundaries among the boundaries between the first pixel region PX1 and the third pixel region PX3, the first pixel region PX1 and the fourth pixel region PX4, and the second pixel region PX2 and the fourth pixel region PX4. For example, each of the floating diffusion regions FD can be configured to be vertically overlapped with a point where the first portion 121 of the pixel separation structure 120 connects to the second portion 123 of the pixel separation structure 120.

[0084] Multiple transfer gate patterns TG can be disposed within a single pixel group PG. The transfer gate patterns TG can include metal, metal silicide, doped or undoped polysilicon, or any combination thereof. When viewed in a plane, the transfer gate patterns TG can be adjacent to a floating diffusion region FD. For example, a pair of transfer gate patterns TG can be adjacent to a floating diffusion region FD. A single pixel region PX can include a pair of transfer gate patterns TG. Each of the pair of transfer gate patterns TG can be symmetrically disposed with respect to the second portion 123 of the pixel separation structure 120. For example, a pair of transfer gate patterns TG on the first pixel region PX1 and a pair of transfer gate patterns TG on the fourth pixel region PX4 can be configured to surround a floating diffusion region FD adjacent to these two pairs of transfer gate patterns TG.

[0085] Figure 6 It shows Figure 1 The diagram depicts a plan view of portion A, which illustrates an image sensor according to some example embodiments of the inventive concept. Figure 7 It shows along Figure 6 The sectional view is taken from line II-II'. Repeated descriptions of the same features will be omitted, and the differences from the above will be discussed in detail.

[0086] Reference Figure 6 and Figure 7 An image sensor according to some embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120. The optical transmission layer 30 may include color filters CF1, CF2, and CF3 and a microlens 400. The substrate 100, wiring layer 20, and microlens 400 may be used in conjunction with a reference... Figures 2A to 3C The substrate 100, wiring layer 20 and microlens 400 discussed are the same or substantially the same.

[0087] The substrate 100 may include multiple pixel groups PG. Each of the pixel groups PG may be arranged in a repeating matrix shape along a first direction D1 and a second direction D2 that intersect each other. The pixel group PG may include a first pixel group PG1, a second pixel group PG2, a third pixel group PG3, and a fourth pixel group PG4. When viewed in a plane, each of the first pixel group PG1, the second pixel group PG2, the third pixel group PG3, and the fourth pixel group PG4 may have a 2x2 arrangement. For example, the first pixel group PG1 and the third pixel group PG3 may be separated from each other in the first direction D1. The first pixel group PG1 and the fourth pixel group PG4 may be separated from each other in the second direction D2. The second pixel group PG2 may be arranged between the third pixel group PG3 and the fourth pixel group PG4. For example, the first pixel group PG1 and the second pixel group PG2 may both be areas with a green color filter. The third pixel group PG3 may be an area with a red color filter. The fourth pixel group PG4 may be an area with a blue color filter.

[0088] Each of the first pixel group PG1, the second pixel group PG2, the third pixel group PG3, and the fourth pixel group PG4 may include a plurality of pixel regions defined by the pixel separation structure 120. For example, the first pixel group PG1 may include a first pixel region PX11, a second pixel region PX12, a third pixel region PX13, and a fourth pixel region PX14. The second pixel group PG2 may include a first pixel region PX21, a second pixel region PX22, a third pixel region PX23, and a fourth pixel region PX24. The third pixel group PG3 may include a first pixel region PX31, a second pixel region PX32, a third pixel region PX33, and a fourth pixel region PX34. The fourth pixel group PG4 may include a first pixel region PX41, a second pixel region PX42, a third pixel region PX43, and a fourth pixel region PX44.

[0089] For example, the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1 can be separated from each other, and the pixel separation structure 120 is placed between the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1. When viewed in a planar view, the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 can be arranged in a two-by-two configuration. For example, the first pixel region PX11 and the third pixel region PX13 can be aligned in the first direction D1, and the first pixel region PX11 and the fourth pixel region PX14 can be aligned in the second direction D2. The first pixel region PX11 and the second pixel region PX12 may not be aligned in the first direction D1 and the second direction D2; for example, they may be arranged diagonally opposite each other or diagonally relative to each other. The second pixel region PX12 and the third pixel region PX13 can be aligned in the second direction D2, and the second pixel region PX12 and the fourth pixel region PX14 can be aligned in the first direction D1. The first, second, third, and fourth pixel regions of each of the second pixel group PG2, the third pixel group PG3, and the fourth pixel group PG4 can be the same as or substantially the same as the first, second, third, and fourth pixel regions PX11, PX12, PX13, and PX14 of the first pixel group PG1.

[0090] Color filters CF1, CF2, and CF3 can be disposed on the first surface 100a of the substrate 100. Color filters CF1, CF2, and CF3 can be configured to correspond to the first pixel group PG1, the second pixel group PG2, the third pixel group PG3, and the fourth pixel group PG4.

[0091] Color filters CF1, CF2, and CF3 may include a pair of first color filters CF1, a second color filter CF2 between the pair of first color filters CF1, and a third color filter CF3 between the pair of first color filters CF1. Each of the color filters CF1, CF2, and CF3 may have a width W2 of about 2 μm (e.g., 2 μm) to about 3 μm (e.g., 3 μm) in a first direction D1, and may have the same or different widths. For example, the pair of first color filters CF1 may be or include a green color filter, the second color filter CF2 may be or include a red color filter, and the third color filter CF3 may be or include a blue color filter. The pair of first color filters CF1 may be vertically stacked with each of the first pixel group PG1 and the second pixel group PG2. The pair of first color filters CF1 may be transparent to the first light and may be diagonally spaced from each other.

[0092] A second color filter CF2 can be disposed between a pair of first color filters CF1. For example, the second color filter CF2 can be adjacent to a side surface CF1a of one of the pair of first color filters CF1 and a side surface CF1d of the other of the pair of first color filters CF1. The second color filter CF2 can be vertically stacked with a third pixel group PG3. The second color filter CF2 can be transparent to a second light that is different from the first light.

[0093] A third color filter CF3 can be disposed between the pair of first color filters CF1. For example, the third color filter CF3 can be adjacent to the other side surface CF1b of one of the pair of first color filters CF1 and the other side surface CF1c of the other of the pair of first color filters CF1. The third color filter CF3 can be vertically stacked with the fourth pixel group PG4. The third color filter CF3 can be transparent to a third light that is different from both the first light and the second light.

[0094] For example, color filters CF1, CF2, and CF3 can be arranged in a tetra-pattern where the number of green color filters is twice the number of red or blue color filters. In the tetra-pattern, color filters CF1, CF2, and CF3 arranged in a 4x4 configuration on pixel areas can form a single color filter group or be included in a single color filter group. A single color filter group can include two green color filters arranged diagonally (or side-by-side), and also includes blue and red color filters arranged diagonally (or side-by-side). For example, each of the red and blue color filters can be positioned between adjacent green color filters. The tetra-patterned color filter group can be repeatedly arranged along a first direction D1 and a second direction D2.

[0095] Color filters CF1, CF2, and CF3 can respectively cover the first pixel group PG1, the second pixel group PG2, the third pixel group PG3, and the fourth pixel group PG4. For example, one of the first color filters CF1 can extend horizontally to cover the top surface of the pixel separation structure 120 and the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1.

[0096] According to some example embodiments, when viewed in a plan view, the pixel separation structure 120 can be configured such that a second portion 123 disposed in a first pixel region PX11 of the first pixel group PG1 can extend in a second direction D2, and a second portion 123 disposed in a second pixel region PX12 of the first pixel group PG1 can extend in a second direction D2. Each of the first pixel region PX11 and the second pixel region PX12 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b that are separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed.

[0097] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the third pixel region PX13 of the first pixel group PG1 can extend in the first direction D1, and the second portion 123 disposed in the fourth pixel region PX14 of the first pixel group PG1 can extend in the first direction D1. Each of the third pixel region PX13 and the fourth pixel region PX14 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d that are separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed.

[0098] The planar arrangement of the second portion 123 in the second pixel group PG2, the third pixel group PG3 and the fourth pixel group PG4 can be the same as the planar arrangement of the second portion 123 in the first pixel group PG1.

[0099] Figure 8 It shows Figure 1 The diagram depicts a plan view of portion A, illustrating an image sensor according to some example embodiments of the inventive concept. For the sake of brevity, repeated descriptions of the same features will be omitted, and the differences from the above will be discussed in detail.

[0100] Reference Figure 8 An image sensor according to some exemplary embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120. The optical transmission layer 30 may include color filters CF1, CF2, and CF3 and a microlens 400. The substrate 100, wiring layer 20, and microlens 400 may be used in conjunction with a reference... Figures 2A to 3C The substrate 100, wiring layer 20, and microlens 400 discussed are essentially the same, and the color filters CF1, CF2, and CF3 can be compared with the reference. Figure 6 The color filters CF1, CF2 and CF3 discussed are the same or substantially the same.

[0101] According to some example embodiments, when viewed in a plan view, the pixel separation structure 120 can be configured such that a second portion 123 disposed in a first pixel region PX11 of the first pixel group PG1 can extend in a second direction D2, and a second portion 123 disposed in a third pixel region PX13 of the first pixel group PG1 can extend in the second direction D2. Each of the first pixel region PX11 and the third pixel region PX13 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b that are separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed.

[0102] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the second pixel region PX12 of the first pixel group PG1 can extend in the first direction D1, and the second portion 123 disposed in the fourth pixel region PX14 of the first pixel group PG1 can extend in the first direction D1. The pixel separation structure 120 can be configured such that the second portion 123 disposed in the second pixel region PX12 can be aligned in the first direction D1, and the second portion 123 disposed in the fourth pixel region PX14 can be aligned in the first direction D1. Each of the second pixel region PX12 and the fourth pixel region PX14 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d, which are separated from each other and in which the second portion 123 of the pixel separation structure 120 is located.

[0103] The planar arrangement of the second portion 123 in the second pixel group PG2, the third pixel group PG3, and the fourth pixel group PG4 can be the same as the planar arrangement of the second portion 123 in the first pixel group PG1. Therefore, the second portion 123 in the second pixel region PX12 and the fourth pixel region PX14 of the first pixel group PG1 can be aligned with the second portion 123 in the second pixel region PX32 and the fourth pixel region PX34 of the third pixel group PG3 in the first direction D1. Similarly, the second portion 123 in the second pixel region PX22 and the fourth pixel region PX24 of the second pixel group PG2 can be aligned with the second portion 123 in the second pixel region PX42 and the fourth pixel region PX44 of the fourth pixel group PG4 in the first direction D1.

[0104] Figure 9 It shows Figure 1 The diagram depicts a plan view of portion A, illustrating an image sensor according to some example embodiments of the inventive concept. For the sake of brevity, repeated descriptions of the same features will be omitted, and the differences from the above will be discussed in detail.

[0105] Reference Figure 9An image sensor according to some exemplary embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120. The optical transmission layer 30 may include color filters CF1, CF2, and CF3 and a microlens 400. The substrate 100, wiring layer 20, and microlens 400 may be used in conjunction with a reference... Figures 2A to 3C The substrate 100, wiring layer 20, and microlens 400 discussed are essentially the same, and the color filters CF1, CF2, and CF3 can be compared with the reference. Figure 6 The color filters CF1, CF2 and CF3 discussed are the same or substantially the same.

[0106] According to some example embodiments, when viewed in a plan view, the pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX11 of the first pixel group PG1 can extend in the second direction D2, and the second portion 123 disposed in the fourth pixel region PX14 of the first pixel group PG1 can extend in the second direction D2. The pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX11 can be aligned in the second direction D2, and the second portion 123 disposed in the fourth pixel region PX14 can be aligned in the second direction D2. Each of the first pixel region PX11 and the fourth pixel region PX14 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed.

[0107] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the second pixel region PX12 of the first pixel group PG1 can extend in the first direction D1, and the second portion 123 disposed in the third pixel region PX13 of the first pixel group PG1 can extend in the first direction D1. Each of the second pixel region PX12 and the third pixel region PX13 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d that are separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed.

[0108] The planar arrangement of the second portion 123 in the second pixel group PG2, the third pixel group PG3, and the fourth pixel group PG4 can be the same as the planar arrangement of the second portion 123 in the first pixel group PG1. Therefore, the second portion 123 in the first pixel region PX11 and the fourth pixel region PX14 of the first pixel group PG1 can be aligned with the second portion 123 in the first pixel region PX41 and the fourth pixel region PX44 of the fourth pixel group PG4 in the second direction D2. Similarly, the second portion 123 in the first pixel region PX21 and the fourth pixel region PX24 of the second pixel group PG2 can be aligned with the second portion 123 in the first pixel region PX31 and the fourth pixel region PX34 of the third pixel group PG3 in the second direction D2.

[0109] Figure 10 It shows Figure 1 The diagram depicts a plan view of portion A, which illustrates an image sensor according to some example embodiments of the inventive concept. Figure 11 It shows along Figure 10 The sectional view is taken from line III-III'. For the sake of brevity, repeated descriptions of the same features will be omitted, and the differences from the above will be discussed in detail.

[0110] Reference Figure 10 and Figure 11 An image sensor according to some embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120. The optical transmission layer 30 may include color filters CF1, CF2, and CF3 and a microlens 400. The substrate 100, wiring layer 20, and microlens 400 may be used in conjunction with a reference... Figures 2A to 3C The substrate 100, wiring layer 20, and microlens 400 discussed are the same or substantially the same. Color filters CF1, CF2, and CF3 can be used with reference to... Figure 6 The color filters CF1, CF2 and CF3 discussed are the same or substantially the same.

[0111] According to some example embodiments, the pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1 can extend parallel to the second direction D2. The pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX21, the second pixel region PX22, the third pixel region PX23, and the fourth pixel region PX24 of the second pixel group PG2 can extend parallel to the second direction D2. Each of the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. Each of the first pixel region PX21, the second pixel region PX22, the third pixel region PX23, and the fourth pixel region PX24 of the second pixel group PG2 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b that are separated from each other and in which the second part 123 of the pixel separation structure 120 is located.

[0112] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX31, the second pixel region PX32, the third pixel region PX33, and the fourth pixel region PX34 of the third pixel group PG3 can extend parallel to the first direction D1. The pixel separation structure 120 can also be configured such that the second portion 123 disposed in the first pixel region PX41, the second pixel region PX42, the third pixel region PX43, and the fourth pixel region PX44 of the fourth pixel group PG4 can extend parallel to the first direction D1. Each of the first pixel region PX31, the second pixel region PX32, the third pixel region PX33, and the fourth pixel region PX34 of the third pixel group PG3 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d, which are separated from each other and in which the second portion 123 of the pixel separation structure 120 is located. Each of the first pixel region PX41, the second pixel region PX42, the third pixel region PX43, and the fourth pixel region PX44 of the fourth pixel group PG4 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d that are separated from each other and in which the second part 123 of the pixel separation structure 120 is located.

[0113] Figure 12 It shows Figure 1The diagram depicts a plan view of portion A, illustrating an image sensor according to some example embodiments of the inventive concept. For the sake of brevity, repeated descriptions of the same features will be omitted, and the differences from the above will be discussed in detail.

[0114] Reference Figure 12 An image sensor according to some exemplary embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120. The optical transmission layer 30 may include color filters CF1, CF2, and CF3 and a microlens 400. The substrate 100, wiring layer 20, and microlens 400 may be used in conjunction with a reference... Figures 2A to 3C The substrate 100, wiring layer 20, and microlens 400 discussed are essentially the same. Color filters CF1, CF2, and CF3 can be compared with the reference... Figure 6 The color filters CF1, CF2 and CF3 discussed are essentially the same.

[0115] According to some example embodiments, the pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1 can extend parallel to the second direction D2. The pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX31, the second pixel region PX32, the third pixel region PX33, and the fourth pixel region PX34 of the third pixel group PG3 can extend parallel to the second direction D2. Each of the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. Each of the first pixel region PX31, the second pixel region PX32, the third pixel region PX33, and the fourth pixel region PX34 of the third pixel group PG3 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b that are separated from each other and in which the second part 123 of the pixel separation structure 120 is located.

[0116] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX21, the second pixel region PX22, the third pixel region PX23, and the fourth pixel region PX24 of the second pixel group PG2 can extend parallel to the first direction D1. The pixel separation structure 120 can also be configured such that the second portion 123 disposed in the first pixel region PX41, the second pixel region PX42, the third pixel region PX43, and the fourth pixel region PX44 of the fourth pixel group PG4 can extend parallel to the first direction D1. Each of the first pixel region PX21, the second pixel region PX22, the third pixel region PX23, and the fourth pixel region PX24 of the second pixel group PG2 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d, separated from each other and with the second portion 123 of the pixel separation structure 120 disposed therebetween. Each of the first pixel region PX41, the second pixel region PX42, the third pixel region PX43, and the fourth pixel region PX44 of the fourth pixel group PG4 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d that are separated from each other and in which the second part 123 of the pixel separation structure 120 is located.

[0117] The second portion 123 disposed in the first pixel region PX41 and the third pixel region PX43 of the fourth pixel group PG4 can be aligned with the second portion 123 disposed in the first pixel region PX21 and the third pixel region PX23 of the second pixel group PG2 in the first direction D1. The second portion 123 disposed in the second pixel region PX42 and the fourth pixel region PX44 of the fourth pixel group PG4 can be aligned with the second portion 123 disposed in the second pixel region PX22 and the fourth pixel region PX24 of the second pixel group PG2 in the first direction D1.

[0118] Figure 13 It shows Figure 1 The diagram depicts a plan view of portion A, illustrating an image sensor according to some example embodiments of the inventive concept. For the sake of brevity, repeated descriptions of the same features will be omitted, and the differences from the above will be discussed in detail.

[0119] Reference Figure 13 An image sensor according to some exemplary embodiments of the inventive concept may include a photoelectric conversion layer 10, a wiring layer 20, and an optical transmission layer 30. The photoelectric conversion layer 10 may include a substrate 100 and a pixel separation structure 120. The optical transmission layer 30 may include color filters CF1, CF2, and CF3 and a microlens 400. The substrate 100, wiring layer 20, and microlens 400 may be used in conjunction with a reference... Figures 2A to 3CThe substrate 100, wiring layer 20, and microlens 400 discussed are essentially the same. Color filters CF1, CF2, and CF3 can be compared with the reference... Figure 6 The color filters CF1, CF2 and CF3 discussed are the same or substantially the same.

[0120] According to some example embodiments, the pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1 can extend parallel to the second direction D2. The pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX41, the second pixel region PX42, the third pixel region PX43, and the fourth pixel region PX44 of the fourth pixel group PG4 can extend parallel to the second direction D2. Each of the first pixel region PX11, the second pixel region PX12, the third pixel region PX13, and the fourth pixel region PX14 of the first pixel group PG1 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b separated from each other and in which the second portion 123 of the pixel separation structure 120 is disposed. Each of the first pixel region PX41, the second pixel region PX42, the third pixel region PX43, and the fourth pixel region PX44 of the fourth pixel group PG4 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b that are separated from each other and in which the second part 123 of the pixel separation structure 120 is placed.

[0121] The second portion 123 disposed in the first pixel region PX11 and the fourth pixel region PX14 of the first pixel group PG1 can be aligned with the second portion 123 disposed in the first pixel region PX41 and the fourth pixel region PX44 of the fourth pixel group PG4 in the second direction D2. The second portion 123 disposed in the second pixel region PX12 and the third pixel region PX13 of the first pixel group PG1 can be aligned with the second portion 123 disposed in the second pixel region PX42 and the third pixel region PX43 of the fourth pixel group PG4 in the second direction D2.

[0122] The pixel separation structure 120 can be configured such that the second portion 123 disposed in the first pixel region PX21, the second pixel region PX22, the third pixel region PX23, and the fourth pixel region PX24 of the second pixel group PG2 can extend parallel to the first direction D1. The pixel separation structure 120 can also be configured such that the second portion 123 disposed in the first pixel region PX31, the second pixel region PX32, the third pixel region PX33, and the fourth pixel region PX34 of the third pixel group PG3 can extend parallel to the first direction D1. Each of the first pixel region PX21, the second pixel region PX22, the third pixel region PX23, and the fourth pixel region PX24 of the second pixel group PG2 may include a third photoelectric conversion region 110c and a fourth photoelectric conversion region 110d, separated from each other and with the second portion 123 of the pixel separation structure 120 disposed therebetween. Each of the first pixel region PX41, the second pixel region PX42, the third pixel region PX43, and the fourth pixel region PX44 of the fourth pixel group PG4 may include a first photoelectric conversion region 110a and a second photoelectric conversion region 110b that are separated from each other and in which the second part 123 of the pixel separation structure 120 is located.

[0123] The image sensor according to the inventive concept may include pixel regions for detecting the phase difference of light incident from different left and right sides, and may also include pixel regions for detecting the phase difference of light incident from different up and down sides. Therefore, the phase difference of light can be detected more accurately to provide an image sensor with improved autofocus operation.

[0124] The exemplary embodiments are not limited to the embodiments described above. Furthermore, each of the exemplary embodiments need not be mutually exclusive. For example, an image sensor may have some features disclosed with reference to one figure and other features disclosed with reference to another figure.

[0125] While some exemplary embodiments of the inventive concept have been discussed with reference to the accompanying drawings, it will be understood that various changes in form and detail may be made therein without departing from the spirit and scope of the inventive concept. Therefore, it will be understood that the above embodiments are illustrative in all respects and not limiting.

Claims

1. An image sensor, the image sensor comprising: The substrate includes multiple pixel groups, each of which includes multiple pixel regions; Multiple color filters are arranged in a two-dimensional manner on the first surface of the substrate; as well as Pixel separation structure, located in the substrate, The pixel separation structure includes: a first portion defining each of the plurality of pixel regions; and a second portion connected to the first portion and extending through the interior of each of the plurality of pixel regions. The plurality of color filters includes: a pair of first color filters, transparent to a first light, wherein one of the pair of first color filters is separated from the other of the pair of first color filters; a second color filter, transparent to a second light, and in contact with one side surface of one of the pair of first color filters and one side surface of the other of the pair of first color filters; and a third color filter, transparent to a third light, and in contact with the other side surface of one of the pair of first color filters and the other side surface of the other of the pair of first color filters. Each of the plurality of pixel groups includes a first pixel region, a second pixel region, a third pixel region adjacent to the first pixel region and the second pixel region, and a fourth pixel region adjacent to the first pixel region and the second pixel region. The second portion of the pixel separation structure, located in any two pixel regions from the first to the fourth pixel region, extends in a first direction parallel to the first surface of the substrate, and The second portion of the pixel separation structure located in the other two pixel regions of the first to fourth pixel regions extends in a second direction intersecting the first direction.

2. The image sensor according to claim 1, wherein, The pair of first color filters are superimposed on the first pixel region and the second pixel region. The second color filter is superimposed on the third pixel area, and The third color filter is superimposed on the fourth pixel area.

3. The image sensor according to claim 1, wherein, The second portion of the pixel separation structure, located in each of the first and third pixel regions, extends in the second direction, and The second portion of the pixel separation structure extends in the first direction in each of the second and fourth pixel regions.

4. The image sensor according to claim 1, wherein, The second portion of the pixel separation structure, located in each of the first and fourth pixel regions, extends in the second direction, and The second portion of the pixel separation structure extends in the first direction in each of the second and third pixel regions.

5. The image sensor according to claim 1, wherein, The first part of the pixel separation structure penetrates the substrate.

6. The image sensor according to claim 1, wherein, The second part of the pixel separation structure extends vertically from the first surface of the substrate toward the second surface of the substrate, with the second surface opposite to the first surface. The bottom surface of the second part of the pixel separation structure is not at the same level as the second surface of the substrate.

7. The image sensor according to claim 1, wherein, Each of the first to fourth pixel regions includes: a first photoelectric conversion region; and a second photoelectric conversion region separated from the first photoelectric conversion region, wherein a second part of the pixel separation structure divides the first photoelectric conversion region and the second photoelectric conversion region.

8. The image sensor according to claim 7, further comprising: Multiple microlenses are located on the multiple color filters. Each of the plurality of microlenses is vertically stacked with the first photoelectric conversion region and the second photoelectric conversion region.

9. The image sensor according to claim 1, wherein, Each of the first to fourth pixel regions has a width in a first direction, the width being in the range of 1 μm to 1.4 μm.

10. An image sensor, the image sensor comprising: The substrate includes a first pixel group, a second pixel group, a third pixel group, and a fourth pixel group, each of the first pixel group to the fourth pixel group including a first pixel region, a second pixel region, a third pixel region adjacent to the first pixel region and the second pixel region, and a fourth pixel region adjacent to the first pixel region and the second pixel region. Multiple color filters are arranged in a two-dimensional manner on the first surface of the substrate; as well as Pixel separation structure, located in the substrate, The pixel separation structure includes: a first portion defining each of the first to fourth pixel regions; and a second portion connected to the first portion and extending through the interior of each of the first to fourth pixel regions. The plurality of color filters includes: a pair of first color filters, transparent to a first light, wherein one of the pair of first color filters is separated from the other of the pair of first color filters; a second color filter, transparent to a second light, and in contact with one side surface of one of the pair of first color filters and one side surface of the other of the pair of first color filters; and a third color filter, transparent to a third light, and in contact with the other side surface of one of the pair of first color filters and the other side surface of the other of the pair of first color filters. Each of the plurality of color filters extends horizontally and covers the first pixel region to the fourth pixel region. The second portion of the pixel separation structure, located in any two pixel regions from the first to the fourth pixel region, extends in a first direction parallel to the first surface of the substrate, and The second portion of the pixel separation structure located in the other two pixel regions of the first to fourth pixel regions extends in a second direction intersecting the first direction.

11. The image sensor according to claim 10, wherein, The pair of first color filters are superimposed on each of the first pixel region and the second pixel region, and The second color filter is superimposed on the third pixel area, and the third color filter is superimposed on the fourth pixel area.

12. The image sensor according to claim 10, wherein, The second portion of the pixel separation structure, located in each of the first and third pixel regions, extends in the second direction, and The second portion of the pixel separation structure extends in the first direction in each of the second and fourth pixel regions.

13. The image sensor according to claim 10, wherein, The second portion of the pixel separation structure, located in each of the first and fourth pixel regions, extends in the second direction, and The second portion of the pixel separation structure extends in the first direction in each of the second and third pixel regions.

14. The image sensor according to claim 10, wherein, The height of the first part is greater than the height of the second part.

15. The image sensor according to claim 10, wherein, The substrate also includes a dummy impurity region located between the first surface of the substrate and the bottom surface of the second part of the pixel separation structure.

16. An image sensor, the image sensor comprising: The substrate includes a first pixel group, a second pixel group, a third pixel group, and a fourth pixel group, each of the first pixel group to the fourth pixel group including a first pixel region, a second pixel region, a third pixel region adjacent to the first pixel region and the second pixel region, and a fourth pixel region adjacent to the first pixel region and the second pixel region. Multiple color filters are arranged in a two-dimensional manner on the first surface of the substrate; as well as Pixel separation structure, located in the substrate, The pixel separation structure includes: a first portion defining each of the first to fourth pixel regions; and a second portion connected to the first portion and extending through the interior of each of the first to fourth pixel regions. The plurality of color filters includes: a pair of first color filters, transparent to a first light, wherein one of the pair of first color filters is separated from the other of the pair of first color filters; a second color filter, transparent to a second light, and in contact with one side surface of one of the pair of first color filters and one side surface of the other of the pair of first color filters; and a third color filter, transparent to a third light, and in contact with the other side surface of one of the pair of first color filters and the other side surface of the other of the pair of first color filters. Each of the plurality of color filters extends horizontally and covers the first pixel region to the fourth pixel region, and The second portion of the pixel separation structure in each of the first to fourth pixel regions is parallel to one of the first and second directions, the first direction intersects the second direction and is parallel to the first surface of the substrate.

17. The image sensor according to claim 16, wherein, The bottom surface of the first part of the pixel separation structure is coplanar with the second surface of the substrate, and the second surface faces the first surface.

18. The image sensor according to claim 16, wherein, One of the pair of first color filters is superimposed on the first pixel group. The second color filter is superimposed on the third pixel group, which is separated from the first pixel group in the first direction, and The first pixel region to the fourth pixel region of the first pixel group and the first pixel region to the fourth pixel region of the second pixel group are aligned in one of the first and second directions.

19. The image sensor according to claim 16, wherein, At least one of the plurality of color filters extends horizontally and covers the first pixel region to the fourth pixel region of the first pixel group.

20. The image sensor according to claim 19, wherein, Each of the plurality of color filters has a width in a first direction, the width being in the range of 2 μm to 3 μm.

Images