Magnetic storage device

Abstract

Embodiments of the present invention provide a magnetic storage device capable of stable information storage. The magnetic storage device of the present invention has a multilayer structure comprising: a first magnetic layer having a variable magnetization direction; a second magnetic layer having a fixed magnetization direction; a third magnetic layer having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer; a first non-magnetic layer; a second non-magnetic layer; and a third non-magnetic layer. The first non-magnetic layer is disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer is disposed between the first non-magnetic layer and the third magnetic layer, the third magnetic layer is disposed between the second magnetic layer and the second non-magnetic layer, and the third non-magnetic layer is disposed between the second magnetic layer and the third magnetic layer. The third magnetic layer contains cobalt (Co) and platinum (Pt), and the second non-magnetic layer contains at least one of molybdenum (Mo) and tungsten (W), and is directly connected to the third magnetic layer.

Description

[0001] [Cross-reference to related applications]

[0002] This application claims priority to Japanese Patent Application No. 2020-157517 (filed on September 18, 2020). This application incorporates all the contents of the basic application by reference to that basic application. Technical Field

[0003] Embodiments of the present invention relate to a magnetic storage device. Background Technology

[0004] A non-volatile magnetic storage device is proposed that integrates magnetoresistive elements on a semiconductor substrate. Summary of the Invention

[0005] The embodiments of the present invention provide a magnetic storage device capable of achieving stable information storage.

[0006] The magnetic storage device according to embodiments of the present invention includes a stacked structure comprising: a first magnetic layer having a variable magnetization direction; a second magnetic layer having a fixed magnetization direction; a third magnetic layer having a fixed magnetization direction antiparallel to the magnetization direction of the second magnetic layer; a first non-magnetic layer; a second non-magnetic layer; and a third non-magnetic layer. The first non-magnetic layer is disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer is disposed between the first non-magnetic layer and the third magnetic layer, the third magnetic layer is disposed between the second magnetic layer and the second non-magnetic layer, and the third non-magnetic layer is disposed between the second magnetic layer and the third magnetic layer. The third magnetic layer contains cobalt (Co) and platinum (Pt), and the second non-magnetic layer contains at least one of molybdenum (Mo) and tungsten (W). Attached Figure Description

[0007] Figure 1 This is a cross-sectional view schematically illustrating an example of the configuration of the magnetic storage device according to the first embodiment.

[0008] Figure 2 This is a cross-sectional view schematically illustrating an example of the configuration of the third magnetic layer included in the magnetoresistive effect element of the magnetic storage device of the first embodiment.

[0009] Figure 3 This is a cross-sectional view schematically illustrating an example of the configuration of the third magnetic layer included in the magnetoresistive effect element of the magnetic storage device of the second embodiment.

[0010] Figure 4 This is a cross-sectional view schematically illustrating another example of the configuration of the third magnetic layer included in the magnetoresistive effect element of the magnetic storage device of the second embodiment.

[0011] Figure 5 This is a cross-sectional view schematically illustrating yet another example of the configuration of the third magnetic layer included in the magnetoresistive effect element of the magnetic storage device of the second embodiment.

[0012] Figure 6 This is a cross-sectional view schematically illustrating an example of the configuration of the second magnetic layer included in the magnetoresistive effect element of the magnetic storage device of the third embodiment.

[0013] Figure 7 This is a perspective view schematically illustrating an example of the configuration of a magnetic storage device using the magnetoresistive effect element of the first, second, and third embodiments. Detailed Implementation

[0014] The embodiments will now be described with reference to the drawings.

[0015] (Implementation Method 1)

[0016] Figure 1 This is a cross-sectional view schematically showing the configuration of the non-volatile magnetic storage device of the first embodiment. More specifically, it is a cross-sectional view schematically showing the configuration of the non-volatile magnetoresistive effect element. Furthermore, in this embodiment and the embodiments described below, an MTJ (Magnetic Tunnel Junction) element will be used as the magnetoresistive effect element.

[0017] Figure 1 The magnetoresistive effect element 100 shown is disposed on the lower structure including the semiconductor substrate 10, etc. That is, multiple magnetoresistive effect elements 100 are integrated on the semiconductor substrate 10.

[0018] The magnetoresistive effect element 100 includes a multilayer structure comprising: a magnetic layer (first magnetic layer) 11, a magnetic layer (second magnetic layer) 12, a magnetic layer (third magnetic layer) 13, a tunnel barrier layer (first non-magnetic layer) 14, an upper buffer layer (second non-magnetic layer) 15, a lower buffer layer (third non-magnetic layer) 16, a spacer layer 17, a capping layer 18, an upper electrode layer 19, and a hard mask layer 20.

[0019] Specifically, the tunnel barrier layer 14 is disposed between the magnetic layer 11 and the magnetic layer 12, the magnetic layer 12 is disposed between the tunnel barrier layer 14 and the magnetic layer 13, the magnetic layer 13 is disposed between the magnetic layer 12 and the upper buffer layer 15, the upper buffer layer 15 is disposed between the magnetic layer 13 and the lower buffer layer 16, and the spacer layer 17 is disposed between the magnetic layer 12 and the magnetic layer 13.

[0020] The stacking order of each layer is as follows: Figure 1As shown, starting from the lower layer side (including the lower structure side such as the semiconductor substrate 10), a lower buffer layer 16, an upper buffer layer 15, a magnetic layer 13, a spacer layer 17, a magnetic layer 12, a tunnel barrier layer 14, a magnetic layer 11, a capping layer 18, an upper electrode layer 19, and a hard mask layer 20 are sequentially deposited.

[0021] The magnetic layer (first magnetic layer) 11 is a ferromagnetic layer with a variable magnetization direction, functioning as the storage layer of the magnetoresistive element 100. Furthermore, the variable magnetization direction refers to the change in magnetization direction relative to a specified write current. The magnetic layer 11 is formed of an FeCoB layer containing iron (Fe), cobalt (Co), and boron (B). The thickness of the magnetic layer 11 is approximately 1.6 nm.

[0022] The magnetic layer (second magnetic layer) 12 is a ferromagnetic layer with a fixed magnetization direction, serving as a reference layer for the magnetoresistive effect element 100. Furthermore, the fixed magnetization direction means that the magnetization direction remains unchanged relative to a specified write current. The magnetic layer 12 includes: a first layer portion 12a disposed on the side of the tunnel barrier layer 14 (the side closer to the tunnel barrier layer 14), a second layer portion 12b disposed on the side of the magnetic layer 13 (the side farther from the tunnel barrier layer 14), and a third layer portion 12c disposed between the first layer portion 12a and the second layer portion 12b.

[0023] The first layer 12a is formed of an FeCoB layer containing iron (Fe), cobalt (Co), and boron (B). The thickness of the first layer 12a is approximately 0.8 nm.

[0024] The second layer, 12b, is formed of a cobalt (Co) layer. The thickness of the second layer, 12b, is approximately 0.5 nm.

[0025] The third layer, 12c, is formed of a molybdenum (Mo) layer. The thickness of the third layer, 12c, is approximately 0.16 nm.

[0026] The magnetic layer (third magnetic layer) 13 is a ferromagnetic layer with a fixed magnetization direction that is antiparallel to the magnetization direction of the magnetic layer 12, and functions as a deflection elimination layer for the magnetoresistive effect element 100. In other words, the magnetic layer 13 has the function of eliminating the magnetic field applied to the magnetic layer 11 by the magnetic layer 12.

[0027] The magnetic layer 13 is formed by a multilayer film in which cobalt (Co) layers and platinum (Pt) layers are alternately disposed along the stacking direction of the stacked structure of the magnetoresistive element 100. That is, the magnetic layer 13 has a superlattice structure with alternating Co and Pt layers.

[0028] Figure 2 This is a schematic cross-sectional view showing the structure of the magnetic layer 13. Figure 2In the example shown, the magnetic layer 13 has a structure in which five Pt layers 13a and five Co layers 13b are alternately stacked. The thickness of each Pt layer 13a and each Co layer 13b is less than 1 nm. For example, the magnetic layer 13 has a structure in which Pt layer (0.5 nm), Co layer (0.4 nm), Pt layer (0.15 nm), Co layer (0.4 nm), Pt layer (0.15 nm), Co layer (0.4 nm), Pt layer (0.15 nm), Co layer (0.4 nm), Pt layer (0.15 nm), and Co layer (0.7 nm) are stacked sequentially from the bottom layer to the top layer, with a total thickness of 3.4 nm.

[0029] By using this structure, the Co layer can be contained in a thickness ratio of more than 1.2 times that of the Pt layer, thus enabling thin film fabrication.

[0030] Furthermore, the magnetic layer 13 has an HCP (hexagonal close-packed) structure, and the (0001) facets of the HCP structure are aligned in a direction perpendicular to the film surface of the stacked structure of the magnetoresistive effect element 100. That is, the lower and upper surfaces of the magnetic layer 13 are (0001) faces.

[0031] The tunnel barrier layer (first non-magnetic layer) 14 is an insulating layer, formed by a MgO layer containing magnesium (Mg) and oxygen (O). The thickness of the tunnel barrier layer 14 is approximately 1.0 nm.

[0032] The upper buffer layer (second non-magnetic layer) 15 is formed of a molybdenum (Mo) layer. The upper buffer layer 15 has a BCC (body-centered cubic) crystal structure, with the (110) plane of the BCC crystal structure aligned in a direction perpendicular to the film surface of the laminated structure. That is, the lower and upper surfaces of the upper buffer layer 15 are (110) planes. This upper buffer layer 15 functions as a crystal orientation nucleus to improve the crystallinity of the magnetic layer 13. The thickness of the upper buffer layer 15 is approximately 0.5 nm.

[0033] Furthermore, the magnetic layer 13 has an HCP (Hybrid Chromium Plasma) crystal structure or an FCC (Face-Centered Cubic) crystal structure. The average lattice spacing of the HCP or FCC crystal structure is denoted by d1. The average distance between atoms constituting the magnetic layer 13 in a direction parallel to the film surface of the magnetic layer 13 is denoted by the average lattice spacing d1. The upper buffer layer 15 has a BCC (Boiled Cryogenic Matrix) crystal structure. The average lattice spacing of the BCC crystal structure is denoted by d2. The average distance between atoms constituting the magnetic layer 13 in a direction parallel to the film surface of the upper buffer layer 15 is denoted by the average lattice spacing d2.

[0034] Ideally, d1 and d2 should satisfy the following relationship:

[0035] 0.95 < d2 / d1 < 1.0.

[0036] The surfaces that come into contact with each other must at least have the aforementioned relationship.

[0037] The lower buffer layer (third non-magnetic layer) 16 has an amorphous structure and does not have a specific crystal structure. For example, this lower buffer layer 16, formed from a hafnium (Hf)-containing layer, has the function of improving the flatness of the layer formed on the lower buffer layer 16 and initializing the crystallinity of the upper buffer layer 15 formed on the lower buffer layer 16. The initialization refers to forming a specific alignment plane in a direction parallel to the film surface of the upper buffer layer 15. That is, the upper buffer layer 15 forms a crystal nucleus by forming on this lower buffer layer 16. The thickness of the lower buffer layer 16 is about 1.0 nm. In addition, the lower electrode (not shown) of the magnetoresistive effect element 100 is connected to the lower buffer layer 16.

[0038] The spacer layer 17 is formed of metallic materials such as iridium (Ir) and ruthenium (Ru), and functions as a Synthetic Antiferromagnetic Coupling (SyAFC) layer to enable antiferromagnetic coupling between magnetic layer 12 and magnetic layer 13. The thickness of the spacer layer 17 is approximately 0.5 nm.

[0039] The capping layer 18 is disposed on the magnetic layer 11 and is formed of a base metal oxide layer, a rare earth oxide layer, or an alkaline earth metal oxide layer. The thickness of the capping layer 18 is approximately 1.0 nm.

[0040] The upper electrode layer 19 is disposed on the capping layer 18 and functions as the upper electrode of the magnetoresistive effect element 100. The upper electrode layer 19 is formed of a single layer or a layer of multiple materials including metals such as hafnium boron (Hf), tantalum (Ta), tungsten (W), zirconium (Zr), niobium (Nb), and molybdenum (Mo). The thickness of the upper electrode layer 19 is less than 5 nm.

[0041] A hard mask layer 20 is disposed on the upper electrode layer 19 and is formed of a ruthenium (Ru) layer with a thickness of less than 10 nm.

[0042] The magnetoresistive element 100 is an STT (Spin Transfer Torque) type magnetoresistive element with perpendicular magnetization. That is, the magnetization directions of magnetic layers 11, 12 and 13 are perpendicular to the respective film surfaces.

[0043] The magnetoresistive element 100 operates in a relatively low-resistance state when the magnetization direction of the magnetic layer 11 is parallel to the magnetization direction of the magnetic layer 12, and in a relatively high-resistance state when the magnetization direction of the magnetic layer 11 is antiparallel to the magnetization direction of the magnetic layer 12. Therefore, the magnetoresistive element 100 can store binary data based on its resistance state (low resistance or high resistance). Furthermore, the resistance state (low resistance or high resistance) of the magnetoresistive element 100 can be set according to the direction of the current flowing within it.

[0044] As described above, in the magnetoresistive effect element 100 of this embodiment, the upper buffer layer 15 is formed of a molybdenum (Mo) layer having a BCC crystal structure aligned on the (110) plane. By using this upper buffer layer 15, an excellent magnetoresistive effect element 100 can be obtained.

[0045] Generally, when the magnetic layer (offset elimination layer) 13 is formed from a Co / Pt multilayer film aligned on the HCP (0001) plane or the FCC (111) plane, the layer aligned on the FCC (111) plane or the HCP (0001) plane is used as the top layer of the buffer layer, which acts as a crystal nucleus.

[0046] On the other hand, it is newly clarified that, as described in this embodiment, when the Mo layer aligned on the BCC (110) plane is used as the upper buffer layer 15, a Co / Pt multilayer film well aligned on the HCP (0001) plane or the FCC (111) plane can also be obtained. By using this Mo layer aligned on the BCC (110) plane as the upper buffer layer 15, an excellent magnetoresistive element 100 as described below can be obtained.

[0047] Typically, a thick platinum (Pt), ruthenium (Ru), or iridium (Ir) layer with a thickness of 1 nm or more is used as the top layer of the buffer layer. These materials are factors that easily diffuse into the first layer portion (FeCoB layer) 12a of the magnetic layer (reference layer) 12, thereby reducing the MR (magnetic resistance) ratio of the magnetoresistive element.

[0048] In this embodiment, by using a Mo layer aligned on the BCC (110) surface as the upper buffer layer 15, the mutual diffusion between the upper buffer layer (Mo layer) 15 and the first layer portion (FeCoB layer) 12a of the magnetic layer 12 can be suppressed, thereby suppressing the decrease in the MR ratio.

[0049] Furthermore, in this embodiment, by using a Mo layer aligned on the BCC (110) plane as the upper buffer layer 15, a Co / Pt multilayer film (magnetic layer 13) well aligned on the HCP (0001) or FCC (111) plane can be obtained. Therefore, the crystallinity of the Co / Pt multilayer film can be improved, and the perpendicular magnetic anisotropy of the Co / Pt multilayer film can be enhanced. In addition, the antiferromagnetic coupling between the magnetic layer 12 and the magnetic layer 13 via the spacer layer (Ir layer) 17 can be improved.

[0050] Furthermore, in this embodiment, by using a Mo layer aligned on the BCC (110) plane, the thickness of the magnetoresistive element 100, which includes buffer layers (upper buffer layer 15 and lower buffer layer 15), can be reduced. Therefore, the spacing between adjacent magnetoresistive elements 100 can be narrowed, and as described below, a highly integrated magnetic storage device can be obtained.

[0051] Generally, when a magnetic layer (offset elimination layer) 13 is formed from a Co / Pt multilayer film aligned on the HCP(0001) or FCC(111) plane, an ion beam is irradiated from a direction inclined relative to the stacked structure to suppress the redeposition of etching products on the sidewalls of the stacked structure. However, when the height of the stacked structure is high (that is, when the overall thickness of the layers constituting the stacked structure is thick), the ion beam is blocked by adjacent stacked structures, and the lower part of the stacked structure may not be reliably etched. Therefore, in order to suppress the redeposition of etching products and reliably etch the lower part of the stacked structure, the spacing between adjacent magnetoresistive elements needs to be increased. Thus, the problem of limiting the high integration of magnetoresistive elements arises.

[0052] In this embodiment, the height of the stacked structure can be reduced (that is, the overall thickness of the layers constituting the stacked structure can be reduced), thus narrowing the spacing between adjacent magnetoresistive effect elements 100 and achieving high integration of magnetoresistive effect elements.

[0053] Furthermore, as described above, the magnetic layer 13 has an HCP crystal structure or an FCC crystal structure. The average lattice spacing of the HCP or FCC crystal structure is denoted by d1. The average distance between atoms constituting the magnetic layer 13 in a direction parallel to the film surface of the magnetic layer 13 is denoted by the average lattice spacing d1. The upper buffer layer 15 has a BCC crystal structure. The average lattice spacing of the BCC crystal structure is denoted by d2. The average distance between atoms constituting the magnetic layer 13 in a direction parallel to the film surface of the upper buffer layer 15 is denoted by the average lattice spacing d2.

[0054] Ideally, d1 and d2 should satisfy the following relationship:

[0055] 0.95 < d2 / d1 < 1.0.

[0056] By satisfying this relationship, the misfit between the FCC crystal structure of the magnetic layer 13 and the BCC crystal structure of the upper buffer layer 15 can be suppressed, and crystallization can be effectively promoted.

[0057] In addition, in the above embodiment, a molybdenum (Mo) layer is used as the upper buffer layer 15, but a tungsten (W) layer can also be used as the upper buffer layer 15. Furthermore, an alloy layer of Mo and W (MoW alloy layer) can also be used as the upper buffer layer 15. Alternatively, an alloy layer combining molybdenum (Mo) and tungsten (W) with platinum (Pt), ruthenium (Ru), and iridium (Ir) (MoPt, WPt, MoIr, WIr, MoRu, WRu alloy layer) can also be used. That is, for the upper buffer layer 15, a layer containing at least one of molybdenum (Mo) and tungsten (W) and having a BCC crystal structure, wherein the BCC crystal structure has a (110) plane perpendicular to the stacking direction of the stacked structure of the magnetoresistive effect element 100.

[0058] Furthermore, in the described embodiment, a molybdenum (Mo) layer is used as the third layer portion 12c of the second magnetic layer 12, but a tungsten (W) layer can also be used as the third layer portion 12c. Alternatively, an alloy layer of Mo and W (MoW alloy layer) can also be used as the third layer portion 12c. That is, for the third layer portion 12c, a layer containing at least one of molybdenum (Mo) and tungsten (W) and having a BCC crystal structure, wherein the BCC crystal structure has a (110) facet in a direction perpendicular to the stacking direction of the stacked structure, can be used. Alternatively, for the purpose of adjusting the average lattice spacing, an alloy layer combining molybdenum (Mo) and tungsten (W) with platinum (Pt), ruthenium (Ru), and iridium (Ir) (MoPt, WPt, MoIr, WIr, MoRu, WRu alloy layer) can also be used.

[0059] (Implementation Method 2)

[0060] Next, the second embodiment will be described. Furthermore, the basic details are the same as those in the first embodiment, and the descriptions of details already described in the first embodiment will be omitted.

[0061] Figure 3 This is a cross-sectional view schematically illustrating the configuration of the magnetic layer (third magnetic layer) 13 included in the magnetoresistive effect element 100 of the magnetic storage device of this embodiment. Furthermore, the basic configuration, except for the magnetic layer 13, is the same as that of the first embodiment.

[0062] In this embodiment, a SiB layer 21 containing silicon (Si) and boron (B) is disposed within the magnetic layer 13. Specifically, similar to the first embodiment, the magnetic layer 13 has a structure in which Pt layers 13a and Co layers 13b are alternately deposited, and the SiB layer 21 is disposed between the Pt layers 13a and Co layers 13b. The thickness of the SiB layer 21 is preferably 0.3 nm or less (for example, about 0.1 nm).

[0063] Furthermore, the SiB layer 21, containing silicon (Si) and boron (B), is a layer constituting the magnetic layer 13, and can also be disposed on the surface (lower surface or upper surface) of the magnetic layer 13. That is, it can be... Figure 4 As shown, the SiB layer 21 is disposed on the upper buffer layer 15 side of the magnetic layer 13, or as... Figure 5 As shown, it is disposed on the spacer layer 17 side of the magnetic layer 13.

[0064] Alternatively, two or more SiB layers 21 may be provided. That is, two or more SiB layers 21 may be provided within the magnetic layer 13. Alternatively, SiB layers 21 may be provided on both the lower and upper surfaces of the magnetic layer 13. Furthermore, one or more SiB layers 21 may be provided within the magnetic layer 13, and at least one of the lower and upper surfaces of the magnetic layer 13 may be provided with SiB layers 21.

[0065] In this embodiment, by providing a SiB layer 21 within or on the surface of the magnetic layer 13, the perpendicular magnetic anisotropy of the Co / Pt multilayer film can be improved. By providing the SiB layer 21, the diffusion of CoPt caused by heat treatment can be suppressed, thus suppressing the decrease in perpendicular magnetic anisotropy. In particular, the diffusion of Pt from the magnetic layer 13 to other layers (magnetic layer 11, magnetic layer 12, tunnel barrier layer 14, and spacer layer 17, etc.) can be suppressed, further suppressing the decrease in perpendicular magnetic anisotropy. Furthermore, the antiferromagnetic coupling between the magnetic layer 12 and the magnetic layer 13 via the spacer layer (Ir layer) 17 can also be improved.

[0066] (Implementation Method 3)

[0067] Next, the third embodiment will be described. Furthermore, the basic details are the same as those in the first embodiment, and the descriptions of details already described in the first embodiment will be omitted.

[0068] Figure 6 This is a cross-sectional view schematically illustrating the configuration of the magnetic layer (second magnetic layer) 12 included in the magnetoresistive effect element 100 of the magnetic storage device of this embodiment. Furthermore, the basic configuration, except for the magnetic layer 12, is the same as that of the first embodiment.

[0069] In this embodiment, the third layer portion 12c of the magnetic layer 12 includes a first sublayer 12c1 and a second sublayer 12c2, wherein the second sublayer 12c2 is disposed between adjacent first sublayers 12c1 in the stacking direction of the stacked structure of the magnetoresistive effect element 100.

[0070] Each first sublayer 12c1 is formed of a molybdenum (Mo) layer. Furthermore, each first sublayer 12c1 has a BCC crystal structure, with the (110) plane of the BCC crystal structure perpendicular to the stacking direction of the stacked structure. The second sublayer 12c2 is formed of a cobalt (Co) layer.

[0071] Specifically, the magnetic layer 12 is formed by a first layer portion 12a (FeCoB layer, thickness 0.8 nm), a second layer portion 12b (Co layer, thickness 0.4 nm), a lower side first sublayer 12c1 (Mo layer, thickness 0.08 nm), an upper side first sublayer 12c1 (Mo layer, thickness 0.08 nm) and a second sublayer 12c2 (Co layer, thickness 0.10 nm).

[0072] Furthermore, the second layer, 12b (Co layer), has an HCP (hexagonal close-packed) crystal structure or an FCC crystal structure. Additionally, the second sublayer, 12c2 (Co layer), has an HCP crystal structure or a BCC crystal structure.

[0073] In this embodiment, the second layer portion 12c of the magnetic layer 12 has a structure in which a second sublayer 12c2 (Co layer) is located between the first sublayer 12c1 (Mo layer). This structure can improve the antiferromagnetic coupling between the magnetic layer 12 and the magnetic layer 13, and also improve the MR ratio of the magnetoresistive effect element 100.

[0074] In addition, in the above embodiment, the third layer portion 12c of the magnetic layer 12 is composed of two first sub-layers 12c1 (Mo layer) and one second sub-layer 12c2 (Co layer). However, the third layer portion 12c may also be composed of three or more first sub-layers 12c1 and two or more second sub-layers 12c2. Specifically, it is also possible to alternately deposit three or more first sub-layers 12c1 and two or more second sub-layers 12c2, with the first sub-layers 12c1 forming the bottom and top layers of the third layer portion 12c.

[0075] Furthermore, in the described embodiment, a molybdenum (Mo) layer is used as the first sublayer 12c1, but a tungsten (W) layer can also be used as the first sublayer 12c1. Alternatively, an alloy layer of Mo and W (MoW alloy layer) can be used as the first sublayer 12c1. That is, for the first sublayer 12c1, a layer containing at least one of molybdenum (Mo) and tungsten (W) and having a BCC crystal structure, wherein the BCC crystal structure has a (110) plane perpendicular to the stacking direction of the stacked structure of the magnetoresistive effect element 100, can be used. In this case, the second sublayer 12c2 can be a layer that does not contain either molybdenum (Mo) or tungsten (W) (typically the Co layer).

[0076] Alternatively, in the second and third embodiments, the stacking order from magnetic layer 13 to magnetic layer 11 can be reversed.

[0077] Figure 7 This is a perspective view schematically illustrating an example of the configuration of a magnetic storage device using the magnetoresistive effect element 100 described in the first, second, and third embodiments.

[0078] Figure 7 The magnetic storage device shown includes: a plurality of first wirings 410 extending along the X direction; a plurality of second wirings 420 extending along the Y direction; and a plurality of storage cells 300 connected between the first wirings 410 and the second wirings 420. One of the first wirings 410 and the second wirings 420 corresponds to a word line, and the other corresponds to a bit line. Each storage cell 300 is composed of a magnetoresistive element 100 and a selector (switching element) 200 connected in series with the magnetoresistive element 100.

[0079] The magnetoresistive effect element 100 uses the magnetoresistive effect element described in the first, second and third embodiments.

[0080] Selector 200 uses, for example, a two-terminal switching element. When the voltage applied between the two terminals is less than a threshold, the switching element is in a "high resistance state," for example, an electrically non-conducting state. When the voltage applied between the two terminals is greater than the threshold, the switching element becomes a "low resistance state," for example, an electrically conducting state.

[0081] By applying a specified voltage between the first wiring 410 and the second wiring 420 connected to the desired storage cell 300, the selector 200 included in the desired storage cell 300 becomes in the ON state (ON state), enabling writing or reading of the magnetoresistive element 100 included in the desired storage cell 300.

[0082] In addition, Figure 7In the example shown, the magnetoresistive element 100 is located on the upper layer and the selector 200 is located on the lower layer, but it is also possible that the magnetoresistive element 100 is located on the lower layer and the selector 200 is located on the upper layer.

[0083] By using the magnetoresistive effect element 100 of this embodiment as such Figure 7 The magnetic storage device shown is capable of achieving excellent magnetic storage performance.

[0084] Several embodiments of the present invention have been described, but these embodiments are provided by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope or spirit of the invention, as well as in the scope of the invention as described in the claims and its equivalents.

[0085] [Explanation of Symbols]

[0086] 10 Semiconductor substrate

[0087] 11. Magnetic Layer (First Magnetic Layer)

[0088] 12. Magnetic layer (2nd magnetic layer)

[0089] 12a, first layer

[0090] 12b, second layer

[0091] 12c, third layer

[0092] 12c1 Sub-layer 1

[0093] 12c2 Sublayer 2

[0094] 13. Magnetic layer (3rd magnetic layer)

[0095] 13a Pt layer

[0096] 13b Co layer

[0097] 14. Tunnel barrier layer (first non-magnetic layer)

[0098] 15. Upper buffer layer (second non-magnetic layer)

[0099] 16. Lower buffer layer (3rd non-magnetic layer)

[0100] 17 Spare Layers

[0101] 18. Cap layer

[0102] 19 Upper electrode layer

[0103] 20 Hard mask layers

[0104] 21 SiB layer

[0105] 100 Magnetoresistive element

[0106] 200 Selector (Switching Element)

[0107] 300 storage units

[0108] 410 Wiring 1

[0109] 420 Second wiring.

Claims

1. A magnetic storage device, characterized in that... It has a layered structure, the layered structure comprising: The first magnetic layer has a variable magnetization direction; The second magnetic layer has a fixed magnetization direction; The third magnetic layer has a magnetization direction that is fixed as antiparallel to the magnetization direction of the second magnetic layer; First non-magnetic layer; The second non-magnetic layer; and The third non-magnetic layer; The first non-magnetic layer is disposed between the first magnetic layer and the second magnetic layer. The second magnetic layer is disposed between the first non-magnetic layer and the third magnetic layer. The third magnetic layer is disposed between the second magnetic layer and the second non-magnetic layer. The third non-magnetic layer is disposed between the second magnetic layer and the third magnetic layer. The third magnetic layer contains cobalt and platinum. The second non-magnetic layer contains at least one of molybdenum and tungsten, is disposed below the third magnetic layer, and is directly connected to the third magnetic layer. The third magnetic layer has an HCP crystal structure with a (0001) facet in a direction perpendicular to the stacking direction of the stacked structure, or an FCC crystal structure with a (111) facet. The second nonmagnetic layer has a BCC crystal structure with a (110) plane in a direction perpendicular to the stacking direction.

2. The magnetic storage device according to claim 1, characterized in that: The average lattice spacing of the third magnetic layer is denoted by d1, and the average lattice spacing of the second non-magnetic layer is denoted by d2, satisfying the following relationship: 0.95 < d2 / d1 < 1.

0.

3. The magnetic storage device according to claim 1, characterized in that: The second magnetic layer includes: The first layer, disposed on the side of the first non-magnetic layer, contains iron, cobalt, and boron; The second layer, disposed on the side of the third magnetic layer, is formed of cobalt; The third layer, disposed between the first layer and the second layer, contains at least one of molybdenum and tungsten; and The fourth layer, located between the first and third layers, is formed of cobalt.

4. The magnetic storage device according to claim 1, characterized in that: The stacked structure further includes: a layer containing silicon and boron disposed within or on the surface of the third magnetic layer.

5. A magnetic storage device, characterized in that... It has a layered structure, the layered structure comprising: The first magnetic layer has a variable magnetization direction; The second magnetic layer has a fixed magnetization direction; The third magnetic layer has a magnetization direction that is fixed as antiparallel to the magnetization direction of the second magnetic layer; First non-magnetic layer; The second non-magnetic layer; and The third non-magnetic layer; The first non-magnetic layer is disposed between the first magnetic layer and the second magnetic layer. The second magnetic layer is disposed between the first non-magnetic layer and the third magnetic layer. The third magnetic layer is disposed between the second magnetic layer and the second non-magnetic layer. The third non-magnetic layer is disposed between the second magnetic layer and the third magnetic layer. The third magnetic layer includes: at least one fourth layer containing cobalt, at least one fifth layer containing platinum, and at least one sixth layer being a SiB layer.

6. The magnetic storage device according to claim 5, characterized in that: The fifth layer is configured to be connected to the second non-magnetic layer.

7. The magnetic storage device according to claim 5, characterized in that: The fourth layer is configured to be connected to the third non-magnetic layer.

8. The magnetic storage device according to claim 6, characterized in that: The sixth layer is disposed between the second non-magnetic layer and the fifth layer.

9. The magnetic storage device according to claim 5, characterized in that: The sixth layer is disposed between the third non-magnetic layer and the fourth layer.

10. The magnetic storage device according to claim 5, characterized in that: The sixth layer is disposed between the fourth layer and the fifth layer.

11. The magnetic storage device according to claim 5, characterized in that: The sixth layer has a thickness of less than 0.5 nm.

12. A magnetic storage device, characterized in that... It has a layered structure, the layered structure comprising: The first magnetic layer has a variable magnetization direction; The second magnetic layer has a fixed magnetization direction; and A first non-magnetic layer is disposed between the first magnetic layer and the second magnetic layer; The second magnetic layer includes: The first layer, located on the side closest to the first non-magnetic layer, contains iron, cobalt, and boron. The second layer, located on the side furthest from the first non-magnetic layer, is formed of cobalt; and The third layer is disposed between the first layer and the second layer; The third layer portion has a first sublayer containing at least one of molybdenum and tungsten, a second sublayer containing at least one of molybdenum and tungsten, and a third sublayer containing cobalt between the first sublayer and the second sublayer.

13. The magnetic storage device according to claim 12, characterized in that: The first sublayer and the second sublayer have a BCC crystal structure having a (110) facet in a direction perpendicular to the stacking direction of the stacked structure.

14. The magnetic storage device according to claim 12, characterized in that: The stacked structure further includes a third magnetic layer having a magnetization direction fixed as antiparallel to the magnetization direction of the second magnetic layer. The second magnetic layer is disposed between the first non-magnetic layer and the third magnetic layer. A third non-magnetic layer is disposed between the second magnetic layer and the third magnetic layer.

15. The magnetic storage device according to any one of claims 1, 5, or 14, characterized in that: The laminated structure further comprises a fourth nonmagnetic layer with an amorphous structure. The fourth non-magnetic layer is disposed on the side of the second non-magnetic layer opposite to the side of the first non-magnetic layer.

16. The magnetic storage device according to claim 15, characterized in that: The fourth non-magnetic layer is directly connected to the second non-magnetic layer.

17. The magnetic storage device according to any one of claims 1, 5, or 12, characterized in that: The first magnetic layer contains iron, cobalt, and boron. The first non-magnetic layer contains magnesium and oxygen.

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