Functional device and method for manufacturing a functional device
Patent Information
- Application Number
- CN202110951603.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2020-09-17
- Filing Date
- 2021-08-18
- Publication Date
- 2026-09-25
- Estimated Expiration
- 2041-08-18
Smart Images

Figure CN114203924B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to functional devices and methods for manufacturing functional devices. Background Technology
[0002] In recent years, research has flourished on the use of printing methods to form a wide variety of electronic devices. Printing is a method that applies only the required amount of ink to the desired locations, thus offering higher material utilization efficiency compared to methods such as vacuum evaporation and sputtering.
[0003] In printing methods, inkjet printing, which does not contact the object being printed and can form the desired pattern as needed, has attracted much attention.
[0004] Electronic devices formed by printing methods include wiring using conductive ink, transistors using semiconductor ink, and display devices using light-emitting materials.
[0005] Patent Document 1 discloses an organic EL device as an example of an electronic device. The organic EL device in Patent Document 1 has a barrier that has relatively high hydrophobicity in order to keep the ink, which serves as both a hole transport layer and an organic light-emitting layer, within a region defined by the barrier.
[0006] Prior art literature
[0007] Patent documents
[0008] Patent Document 1: Japanese Patent No. 4990415 Summary of the Invention
[0009] One aspect of this disclosure relates to a functional device comprising: a barrier having a hydrophobic portion and a low hydrophobic portion having lower hydrophobicity compared to the hydrophobic portion on its surface; a first functional layer located in the area defined by the barrier and in contact with the hydrophobic portion; and a second functional layer in contact with the low hydrophobic portion and covering the first functional layer.
[0010] One aspect of this disclosure relates to a method for manufacturing a functional device, comprising: a step of forming a barrier on a substrate; a step of forming a first functional layer located in an area defined by the barrier and in contact with a hydrophobic portion of a surface portion of the barrier; a step of forming a low hydrophobic portion in a portion of the surface portion, the low hydrophobic portion being relatively less hydrophobic than the hydrophobic portion; and a step of forming a second functional layer in contact with the low hydrophobic portion and covering the first functional layer. Attached Figure Description
[0011] Figure 1 This is a cross-sectional view showing the structure of the organic EL device disclosed in Patent Document 1.
[0012] Figure 2 This is a cross-sectional view showing the structure of the functional device involved in the embodiments of this disclosure.
[0013] Figure 3 This is a cross-sectional view of an intermediate manufactured product in an embodiment where an electrode layer and a partition have been formed on a substrate.
[0014] Figure 4 This is a diagram showing the state of an intermediate product involved in an embodiment being irradiated with CF4 plasma.
[0015] Figure 5 This is a cross-sectional view of an intermediate product involved in an embodiment where ink is stored in the luminescent area.
[0016] Figure 6 This is a cross-sectional view showing an intermediate manufactured article in an embodiment where a light-emitting layer has been formed.
[0017] Figure 7 This is a diagram showing the state in which an intermediate product involved in an embodiment is irradiated with O2 plasma through a shielding mask.
[0018] Figure 8 This is a cross-sectional view showing an intermediate manufactured article in an embodiment where an electrode layer has been formed.
[0019] Figure 9A This is a cross-sectional view showing the structure of the functional device involved in Modification 1 of this disclosure.
[0020] Figure 9B This is a cross-sectional view showing the construction of a functional device having another construction involved in Modification 1 of this disclosure.
[0021] Figure 10 This is a cross-sectional view showing the structure of the functional device involved in Modification 2 of this disclosure.
[0022] Figure 11 This is a cross-sectional view showing the structure of the functional device involved in Modification 3 of this disclosure.
[0023] Figure 12 This is a cross-sectional view of an intermediate manufactured product according to Embodiment 1, in which an electrode layer and a partition have been formed on a substrate.
[0024] Figure 13 This is a cross-sectional view showing the intermediate product involved in Embodiment 1 in a state where a red luminescent layer has been formed.
[0025] Figure 14 This is a diagram showing the state of the intermediate product involved in Example 1 being irradiated with O2 plasma through a shielding mask.
[0026] Figure 15 This is a cross-sectional view showing the structure of the functional device involved in Embodiment 1.
[0027] Figure 16 This is a cross-sectional view of an intermediate manufactured product according to Embodiment 2, in which an electrode layer and a partition have been formed on the substrate.
[0028] Figure 17 This is a diagram showing the state of the intermediate product involved in Example 2 after being irradiated with CF4 plasma.
[0029] Figure 18 This is a cross-sectional view showing the intermediate product involved in Embodiment 2 in a state where a red luminescent layer has been formed.
[0030] Figure 19 This is a cross-sectional view showing an intermediate product being housed in a vacuum dryer.
[0031] Figure 20 This is a cross-sectional view showing the structure of the functional device involved in Embodiment 2.
[0032] Symbol Explanation
[0033] 1. Organic EL devices;
[0034] 10 TFT panel;
[0035] 12 Anodes;
[0036] 13. Hole injection layer;
[0037] 14. Hole transport layer;
[0038] 15. Organic light-emitting layer;
[0039] 16. Dike;
[0040] 18. Electron injection layer;
[0041] 20. Transparent cathode;
[0042] 22. Transparent sealing film;
[0043] 70 Light;
[0044] 100 functional devices;
[0045] 110 substrate;
[0046] 120 electrode layer;
[0047] 121 Gate electrode layer;
[0048] 122 Gate insulating layer;
[0049] 130 Dike;
[0050] 131 Surface part;
[0051] 132. Hydrophobic region;
[0052] 133. The surface of the hydrophobic portion;
[0053] 134 Low hydrophobicity;
[0054] 135 Surface with low hydrophobicity;
[0055] 136 Internal;
[0056] 140 First functional layer;
[0057] 141. Emissive layer;
[0058] 141R Red Emissive Layer;
[0059] 141G Green Emissive Layer;
[0060] 141B Blue Emissive Layer;
[0061] 41. Ink;
[0062] 41R Red Glowing Ink;
[0063] 41G red-green luminescent ink;
[0064] 41B Blue Glowing Ink;
[0065] 142 Hole injection layer;
[0066] 143 Hole transport layer;
[0067] 144 Electron injection layer;
[0068] 145 Organic semiconductor layer;
[0069] 150 Second functional layer;
[0070] 151 Electrode layer;
[0071] 152 Source electrode;
[0072] 153 Drain electrode;
[0073] 156 Sealing layer;
[0074] 157. Protective layer;
[0075] 158 Inorganic layer;
[0076] 210 Vacuum dryer;
[0077] 211. Reception area;
[0078] 212 Exhaust pump;
[0079] 310 CF4 plasma;
[0080] 320 O2 plasma;
[0081] 330 Masking Mask;
[0082] 400 contact hole. Detailed Implementation
[0083] In this specification, the term "functional device" is a general term for devices that utilize physical phenomena to output a function for a specific purpose. Examples of functional devices include organic EL devices, quantum dot light-emitting devices, color-changing filter devices, organic transistor devices, and sensor devices. (Technical Background)
[0085] Functional materials, such as luminescent materials and conductive materials, which are used to manufacture functional devices, especially light-emitting devices, are very expensive. Therefore, it is preferable to minimize material loss.
[0086] The printing method allows for the application of only the required amount of ink to the desired locations, thus offering higher material utilization efficiency compared to methods such as vacuum evaporation and sputtering. Furthermore, the printing method enables film formation in the atmosphere rather than in a vacuum. Consequently, the printing method eliminates the energy consumption associated with vacuum equipment, making it advantageous from the perspective of reducing operating energy. Additionally, in this specification, "ink" refers to a liquid material used for a given layer.
[0087] Printing methods include screen printing, letterpress printing, gravure printing, and inkjet printing. In particular, inkjet printing has attracted much attention, and the development of methods for forming display devices such as color filters, organic EL displays, and quantum dot displays using inkjet printing is gaining momentum.
[0088] As a next-generation display, there are displays that use quantum dot materials, which are inorganic materials, as the light-emitting layer. The development of such displays is booming.
[0089] Quantum dots are special semiconductors that are extremely small, specifically having a diameter of 2–10 nm (in other words, about 10–50 atoms). Thus, substances of tiny size exhibit properties different from those exhibited when they are larger.
[0090] In quantum dots, the band gap size can be controlled simply by changing the particle size of the quanta. The emission wavelength of a quantum dot depends on the band gap size, thus allowing for very precise tuning. In other words, the emission wavelength of a quantum dot can be changed simply by altering the particle size of the quanta. More specifically, the smaller the particle size, the more the emission wavelength shifts towards the blue side; conversely, the larger the particle size, the more the emission wavelength shifts towards the red side.
[0091] The half-width at half-maximum (WWHM) of the emission wavelength is extremely small, below tens of nanometers. Due to the small WWHM of the emission wavelengths for red, blue, and green, the emission wavelengths exhibit high color gamut characteristics. As a result, the performance of the display device is significantly improved.
[0092] Quantum dots consist of a core, a shell layer forming around the core, and ligands forming around the shell. Representative materials for the core include inorganic materials such as cadmium-selenium, indium-phosphorus, copper-indium-sulfur, and silver-indium-sulfur, as well as inorganic materials with perovskite structures. Representative materials for the shell include zinc sulfide.
[0093] Quantum dots achieve stability as ink by forming ligands around their shells. Light-emitting devices formed from such quantum dot materials include photoluminescent devices where electrons of the quantum dot material emit light when excited by light energy, and electroluminescent devices where light is emitted when excited by electrical energy.
[0094] Photoluminescent devices are used as color filters for micro-LED displays, which are an example of quantum dot displays.
[0095] Electroluminescent devices are an example of quantum dot displays, which are quantum dot light-emitting displays formed by thinning quantum dot materials between the anode and cathode.
[0096] Quantum dot displays, which use photoluminescent or electroluminescent devices, offer significantly higher brightness and superior outdoor visibility compared to organic EL displays. Therefore, they promise flexible applications in mobile phones, automotive displays, and head-mounted displays. These displays are expected to require pixel resolutions of 200 ppi (pixels per inch) or higher.
[0097] The luminescent properties of materials used in photoluminescent and electroluminescent devices deteriorate under the influence of atmospheric moisture. Therefore, a sealing film needs to be formed after the luminescent layer is formed during the manufacturing of these devices. The sealing film is often formed by laminating silicon nitride films with acrylic resin films, epoxy resin films, etc. Silicon nitride films are formed using vacuum processes such as CVD (Chemical Vapor Deposition). Lamination films are formed using inkjet printing.
[0098] Based on the following reasons (1) to (3), the development of methods for forming layers and films for functional devices by means of coating processes such as inkjet printing without using vacuum processes is becoming increasingly popular.
[0099] (1) Material loss
[0100] When using vacuum processes such as vapor deposition, sputtering, and CVD to manufacture functional devices, a significant amount of material is consumed. The materials used to form the films in these functional devices are very expensive; therefore, minimizing material consumption is preferable.
[0101] (2) Cost
[0102] Vacuum equipment has high operating costs, which increases the cost of manufacturing functional devices when using vacuum processes.
[0103] (3) Manufacturing at low temperatures
[0104] The development of methods for forming functional devices on flexible substrates such as plastic films is gaining momentum. Because flexible substrates have low heat resistance, functional devices need to be manufactured at low temperatures when using them as substrates.
[0105] Research is underway on forming all the layers of functional devices through a coating process, with the aim of improving material utilization efficiency, reducing manufacturing costs by manufacturing functional devices under atmospheric pressure, and manufacturing functional devices at temperatures that plastic films can withstand.
[0106] <Problems with Coating Processes>
[0107] Figure 1 This is a cross-sectional view showing the structure of the organic EL device 1 (an example of a functional device) disclosed in Patent Document 1.
[0108] The organic EL device 1 includes a TFT panel 10, an anode 12, a hole injection layer 13, a hole transport layer 14, an organic light-emitting layer 15, a spacer 16, an electron injection layer 18, a transparent cathode 20, and a transparent sealing film 22.
[0109] In the fabrication of the organic EL device 1, functional layers such as the organic light-emitting layer 15 are formed by inkjet printing. Specifically, the organic EL device 1 is fabricated through the following process.
[0110] (1) An anode (electrode) 12 and a hole injection layer 13 are formed on the TFT panel 10.
[0111] (2) A partition 16 is formed on the hole injection layer 13 to define a pixel area.
[0112] (3) The hole transport layer 14 and the organic light-emitting layer 15 are formed by inkjet printing within the area defined by the dike 16.
[0113] (4) An electron injection layer 18 and a transparent cathode 20 are formed on the organic light-emitting layer 15 by a vacuum process.
[0114] (5) A transparent sealing film 22 is formed in such a way that it covers the electron injection layer 18 and the transparent cathode 20.
[0115] Furthermore, the barrier 16 needs to have a certain level of hydrophobicity in order to keep the ink, which serves as the material for the hole transport layer 14 and the organic light-emitting layer 15, within a given area. Therefore, the barrier 16 has relatively high hydrophobicity.
[0116] When manufacturing organic EL devices with highly hydrophobic barriers, if functional layers such as transparent cathodes and transparent sealing films located above the light-emitting layer are formed by coating processes such as inkjet printing, the uniformity of the film thickness of these functional layers will decrease.
[0117] Similarly, when manufacturing organic transistor devices with highly hydrophobic barriers, if functional layers such as source electrodes, drain electrodes, and protective films are formed by coating processes such as inkjet printing, the uniformity of the film thickness of these functional layers will decrease.
[0118] Without a highly uniform film, the quality of functional devices such as organic EL devices and organic transistor devices will deteriorate.
[0119] For example, in manufacturing with Figure 1 When the organic EL device 1 with the structure shown is formed by inkjet printing, the film-forming performance of the transparent cathode 20 and the transparent sealing film 22 will be significantly reduced.
[0120] Specifically, the barrier 16 has relatively high hydrophobicity, so the coating film formed by the ink will be repelled by the barrier 16, resulting in a decrease in the uniformity of the film thickness of the transparent cathode 20 and the transparent sealing film 22, and a decrease in the coverage of the transparent sealing film 22.
[0121] In particular, when the uniformity of the film thickness of the transparent cathode 20 decreases, the resistance value of the organic EL device 1 will deviate, causing a deterioration in its electrical characteristics. As a result, the light-emitting characteristics of the organic EL device 1 may decrease. Furthermore, when the coverage of the transparent sealing film 22 decreases, moisture and other substances in the atmosphere can seep into the organic EL device 1 through the thinner portion of the transparent sealing film 22, adversely affecting the organic light-emitting layer 15. As a result, the light-emitting characteristics of the organic EL device 1 continuously decrease over time.
[0122] Other functional components will be explained. In organic transistor devices with highly hydrophobic barrier structures, when functional layers such as source electrodes, drain electrodes, and protective films are formed using inkjet printing, the ink applied to the barrier is repelled. Consequently, the uniformity of these functional layers decreases. As a result, the quality of the organic transistor device deteriorates.
[0123] Thus, when functional devices are formed by inkjet printing, the barrier has relatively high hydrophobicity, which may lead to a decrease in the quality of the functional device.
[0124] The functional device disclosed herein can be manufactured through a coating process while ensuring quality, producing many functional layers of the functional device.
[0125] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. Furthermore, common components in the various figures are labeled with the same symbols, and their descriptions are omitted where appropriate.
[0126] (Implementation Method)
[0127] Figure 2 This is a cross-sectional view illustrating the structure of the functional device 100 according to an embodiment of the present disclosure. The cross-sectional view in this specification is a vertical cross-sectional view of the functional device 100. In this embodiment, the functional device 100 is described as an electroluminescent organic EL device.
[0128] The functional device 100 includes a substrate 110, an electrode layer 120, a spacer 130, a first functional layer 140, and a second functional layer 150. Although details will be described later, in this embodiment, the first functional layer 140 is composed of a light-emitting layer 141. In addition, the functional device 100 is a top-emission structure that allows light emitted from the light-emitting layer 141 to be emitted from the upper side of the functional device 100 toward the outside.
[0129] <Substrate 110>
[0130] Various layers are stacked on one side of the substrate 110. The substrate 110 can be made of any insulating material, and can be either transparent or opaque. The substrate 110 can also be a flexible resin sheet such as glass or polyimide.
[0131] <Electrode layer 120>
[0132] In this embodiment, the electrode layer 120 is composed of a reflective electrode. The electrode layer 120 is formed on the substrate 110. The material of the electrode layer 120 is a silver-palladium-copper alloy or a metal material with high optical reflectivity, such as aluminum. Therefore, the functional device 100 can efficiently emit light emitted by the light-emitting layer 141 to the outside of the functional device 100.
[0133] <Dike 130>
[0134] Dike 130 is formed as part of covering electrode 102. Dike 130 defines the area where the first functional layer 140 is formed.
[0135] Generally, the 130mm dike is more likely to have relatively high liquid repellency. Furthermore, inks applied using inkjet printing and other coating processes are mostly of low viscosity. Low ink viscosity means a low concentration of solid components. That is, in order to achieve a layer of sufficient thickness after the ink solvent dries, a corresponding amount of ink needs to be applied.
[0136] For example, in ink 41 with the light-emitting layer 141 coated by a coating process (see reference) Figure 5 In the case where the applied ink is used to form the light-emitting layer 141, the ink 41 needs to be stored within the area defined by the partition 130 (hereinafter referred to as the light-emitting area). If the hydrophobicity of the partition 130 is relatively low, the applied ink 41 will overflow from the light-emitting area. If the hydrophobicity of the partition 130 is relatively high, the required amount of ink 41 can be stored in the light-emitting area. Therefore, from the viewpoint of forming a sufficiently thick light-emitting layer 141, it is preferable that the hydrophobicity of the partition 130 is high, that is, it is preferable that the wettability is low. Here, low wettability means high hydrophobicity, and high wettability means low hydrophobicity.
[0137] However, when the barrier 130 has relatively high hydrophobicity, and the second functional layer 150 covering the barrier 130 is formed by a coating process such as inkjet printing or screen printing, the ink applied to the second functional layer 150 will be repelled by the barrier 130. As a result, the uniformity of the second functional layer 150 decreases. Therefore, according to the viewpoint of forming the second functional layer 150, which is the upper layer of the light-emitting layer 141, with higher uniformity, it is preferable that the barrier 130 has low hydrophobicity, that is, it is preferable that it has high wettability.
[0138] Therefore, the partition 130 of the functional device 100 according to the embodiments of this disclosure has a portion with high hydrophobicity and a portion with low hydrophobicity. Hereinafter, the partition 130 will be described in detail.
[0139] The dam 130 has a surface portion 131 and an interior portion 136. The surface portion 131 covers the interior portion 136 and a portion of the electrode layer 120.
[0140] The surface portion 131 has a hydrophobic portion 132 and a low hydrophobic portion 134. The hydrophobic portion 132 is the portion of the surface portion 131 that is in contact with the first functional layer 140. The low hydrophobic portion 134 is the portion of the surface portion 131 other than the hydrophobic portion 132, and is the portion that is in contact with the second functional layer 150.
[0141] The material of the hydrophobic portion 132 is a photosensitive resin material. Furthermore, the hydrophobic portion 132 contains a fluorinated compound as a hydrophobic component. The material of the hypohydrophobic portion 134 is also a photosensitive resin material, similar to the hydrophobic portion 132. The hypohydrophobic portion 134 may or may not contain a fluorinated compound. Specifically, the photosensitive resin material is an acrylic resin, epoxy resin, or polyimide resin, etc.
[0142] The concentration of fluorine atoms in the liquefaction-repellent portion 132 is higher than that in the low liquefaction-repellent portion 134. Specifically, the concentration of fluorine atoms in the liquefaction-repellent portion 132 is 5 atom% or more and 10 atom% or less, while the concentration of fluorine atoms in the low liquefaction-repellent portion 134 is 0 atom% or more and less than 5 atom%. Furthermore, the fluorine atom concentration can be determined using an X-ray photoelectron spectrophotometer (also known as XPS or ESCA).
[0143] Thus, the concentration of the hydrophobic component in the low hydrophobic portion 134 is lower than that in the hydrophobic portion 132, and therefore the hydrophobicity of the low hydrophobic portion 134 is less than that of the hydrophobic portion 132.
[0144] The contact angle of the hydrophobic portion 132 with respect to the ink in the first functional layer 140 is 20 degrees or more and 70 degrees or less, preferably 30 degrees or more and 60 degrees or less. The contact angle of the low hydrophobic portion 134 with respect to the ink in the second functional layer 150 is 0 degrees or more and 30 degrees or less, preferably 0 degrees or more and 20 degrees or less. Here, the contact angle is a value representing the wettability relative to the liquid; a larger contact angle indicates lower wettability, and a smaller contact angle indicates higher wettability. Furthermore, the contact angles of the hydrophobic portion 132 and the low hydrophobic portion 134 are not relative to the same ink, but rather values relative to inks containing different substances. Therefore, it cannot be assumed that the functional device 100 according to the embodiment has a low hydrophobic portion 134 with higher hydrophobicity than the hydrophobic portion 132.
[0145] The surface roughness of surface 135 in the low hydrophobic portion 134 that is in contact with the first functional layer 140 is greater than the surface roughness of surface 133 in the hydrophobic portion 132. The smaller the roughness, the smaller the coefficient of friction of the surface; the larger the roughness, the larger the coefficient of friction of the surface.
[0146] The material inside 136 is a photosensitive resin material, specifically acrylic resin, epoxy resin, or polyimide resin.
[0147] <Functional Layer 140>
[0148] The first functional layer 140 is located on the electrode layer 120 and in the area defined by the partition 130, and is in contact with the hydrophobic portion 132.
[0149] In this embodiment, the first functional layer 140 is composed of a light-emitting layer 141.
[0150] The light-emitting layer 141 has a red light-emitting layer 141R that emits red light, a green light-emitting layer 141G that emits green light, and a blue light-emitting layer 141B that emits blue light.
[0151] The thickness of the light-emitting layer 141 is, for example, several tens of nanometers. The thickness of the light-emitting layer 141 varies depending on the type of material and the optical design of the device to be manufactured, but is generally above 20 nm and below 100 nm.
[0152] The material of the luminescent layer 141 is a fluorene-based polymeric organic compound. For example, this fluorene-based polymeric organic compound is poly(9,9-dioctylfluorene-alt-benzothiadiazole), also known as F8BT.
[0153] <Functional Layer 2 150>
[0154] The second functional layer 150 is in contact with the hypohydrophobic portion 134 and covers the first functional layer 140.
[0155] In this embodiment, the second functional layer 150 is composed of an electrode layer 151 and a sealing layer 156.
[0156] Electrode layer 151 is composed of transparent electrodes. Electrode layer 151 is formed to cover part of barrier 130 and light-emitting layer 141. The material of electrode layer 151 is indium tin oxide (ITO). Electrode layer 151 has high optical transmittance, thus enabling light emitted from light-emitting layer 141 to be emitted efficiently to the outside of functional device 100.
[0157] The sealing layer 156 is formed to cover at least a portion of the partition 130 and the electrode layer 151. Furthermore, it is self-evident that the sealing layer 156 covers the light-emitting layer 141 located below the electrode layer 151. Figure 2 As shown, in this embodiment, the sealing layer 156 is formed as a so-called full coating layer, spanning multiple areas defined by the dike 130.
[0158] The sealing layer 156 is made of photosensitive epoxy resin or acrylic resin or other resin materials.
[0159] The light-emitting layer 141 of the functional device 100 is easily degraded by moisture. The sealing layer 156 protects the light-emitting layer 141 from the influence of moisture in the atmosphere.
[0160] In addition, the sealing layer 156 only needs to protect the light-emitting layer 141 from the influence of moisture in the atmosphere, or it can only cover a part of the dike 130.
[0161] The materials of the aforementioned layers and the dike 130 are examples, and are not limited to these materials.
[0162] <Manufacturing Method of Functional Device 100>
[0163] Reference Figures 2 to 8 The manufacturing method of the functional device 100 according to this embodiment will be described. Furthermore, in the following description, the entire object formed during the manufacturing process of the functional device 100 will be referred to as an intermediate manufactured object. The manufacturing method of the functional device 100 includes the following steps S1 to S5.
[0164] First, an electrode layer 120 is formed on the substrate 110 (step S1). The electrode layer 120 is formed using materials such as aluminum or a silver-palladium-copper alloy by vacuum film deposition methods such as sputtering.
[0165] Next, the barrier 130 is formed as part of the covering electrode layer 120 (step S2). Step S2 includes step S21 of forming a barrier 130 with relatively low hydrophobicity, and step S22 of forming a hydrophobic portion 132 on the surface portion 131 of the barrier 130. Here, a barrier 130 with relatively low hydrophobicity means a barrier 130 that does not have a hydrophobic portion 132 on the surface portion 131 and has relatively low hydrophobicity in the interior 136.
[0166] In step S21, a photosensitive resin material is used to form a hydrophobic septum 130 by photolithography. As described above, the photosensitive resin material is an acrylic resin, epoxy resin, or polyimide resin, etc. Step S21 includes the following steps S211 to S214.
[0167] First, a photosensitive resin material that is cured by exposure to ultraviolet light is coated onto the substrate 110 using spin coating, an example of a coating process (step S211). Furthermore, the rotation speed in the spin coating process, which is a condition for coating, can be adjusted according to the required height of the partition 130.
[0168] Next, the coating layer is pre-baked using a heating plate or similar device to dry the coated material and remove the solvent components (step S212). Then, it is exposed to ultraviolet light through a photomask with the desired pattern formed (step S213). Here, the photosensitive resin material contains a negative material that cures in the exposed areas irradiated by ultraviolet light and a positive material that cures in the unexposed areas. The uncured areas are removed using an appropriate developer depending on the type of material. Then, the remaining pattern is formally baked using a curing oven or similar device (step S214). Through these steps S211 to S214, a diaphragm 130 with relatively low hydrophobicity is formed. As a result, the intermediate product becomes... Figure 3 The state shown, Figure 3 This is a cross-sectional view showing an intermediate manufactured part in which an electrode layer 120 and a hydrophobic barrier 130 are formed on a substrate 110. Figure 3 The intermediate product shown has relatively low hydrophobicity of the dam 130.
[0169] Next, for Figure 2 The intermediate product is used to form a hydrophobic portion 132 on the surface portion 131 of the partition 130 (step S22). In this embodiment, in step S22, plasma irradiation is performed using a fluorocarbon gas. The fluorocarbon gas is, for example, a fluorinated compound such as carbon tetrafluoride (CF4). In the following description, it will be described that the fluorocarbon gas is carbon tetrafluoride (CF4). In this case, as Figure 4 As shown, fluorocarbon gas is irradiated toward the surface portion 131 by CF4 plasma 310. Figure 4 This is a diagram showing the state of an intermediate product irradiated with CF4 plasma 310.
[0170] By irradiating the surface portion 131 with a fluorocarbon gas, a fluorine compound based on CF4 plasma 310 is introduced into the surface portion 131, thereby increasing the hydrophobicity of the surface portion 131. In other words, the wettability of the surface portion 131 of the barrier 130 decreases. As a result, a hydrophobic portion 132 is formed in the surface portion 131 (see reference). Figure 4 ).
[0171] Next, ink of the first functional layer 140 is applied to the light-emitting area, thereby forming the first functional layer 140 located in the area defined by the barrier 130 and in contact with the hydrophobic portion 132 of the surface portion 131 of the barrier 130 (step S3). In this embodiment, the first functional layer 140 is composed only of the light-emitting layer 141, therefore step S3 only includes step S31 of forming the light-emitting layer 141. Step S31 includes the following steps S311 to S313.
[0172] Ink containing dissolved high-molecular-weight and low-molecular-weight compounds with luminescent properties is applied to the luminescent area using an inkjet printing method (step S311). The ink applied in step S311 is ink 41R for the red luminescent layer 141R, ink 41G for the green luminescent layer 141G, and ink 41B for the blue luminescent layer 141B.
[0173] In ink 41, the polymer and low molecular weight compounds are dispersed using an organic solvent as a dispersion medium. Here, the concentration of the polymer and low molecular weight compounds relative to the organic solvent (hereinafter sometimes simply referred to as solvent) is 0.5% by weight or more and 10% by weight or less.
[0174] Since the hydrophobic portion 132 is located on the surface portion 131 of the partition 130, if the ink 41 is applied to the light-emitting area, then... Figure 5 As shown, ink 41 protrudes in the light-emitting area. Therefore, a relatively large amount of ink 41 can be stored in the light-emitting area. Figure 5 This is a cross-sectional view showing an intermediate manufactured object in a state where ink 41 is stored in the luminescent area.
[0175] After the ink 41 is applied, vacuum drying is performed on the substrate 110 coated with ink 41 (step S312). Vacuum drying is performed using a vacuum dryer 210 (see reference). Figure 19 The vacuum dryer 210 is equipped with a container 211 capable of holding intermediate products and an exhaust pump 212 for reducing the vacuum level within the container 211.
[0176] Vacuum drying is a method that promotes solvent evaporation by reducing the pressure inside the receiving portion 211 containing the substrate 110 through the exhaust pump 212. In inkjet-coated inks 41, solvents with relatively high boiling points are often used to suppress solvent drying in the nozzle. Therefore, vacuum drying is often used to expedite the drying process.
[0177] Vacuum drying conditions include, for example, achieving a vacuum level of several Pa in the container 211 and maintaining it for several tens of minutes. However, since the appropriate vacuum level and maintenance time vary depending on the boiling point of the solvent contained in the ink 41 of the light-emitting layer 141, the conditions for vacuum drying are not necessarily limited to achieving a vacuum level of several Pa and maintaining it for several tens of minutes.
[0178] After vacuum drying, the ink 41 is heated (step S313). Step S313 can be performed only as needed, therefore step S31 may not include step S313.
[0179] The result is, as Figure 6As shown, light-emitting layers 141R, 141G and 141B are formed respectively. Figure 6 This diagram shows an intermediate manufactured object in a state where light-emitting layers 141R, 141G, and 141B have been formed. Additionally, Figure 6 The thicknesses of the light-emitting layers 141R, 141G, and 141B shown are corresponding to the amount of ink 41R, 41G, and 41B stored in the light-emitting area.
[0180] Next, a low-hydrophobic portion 134 is formed on a portion of the surface portion 131 (step S4). In this embodiment, the concentration of the hydrophobic component in a portion of the hydrophobic portion 132 is reduced, and the low-hydrophobic portion 134 is formed from that portion.
[0181] Specifically, in step S4, as Figure 7 As shown, a portion of the surface portion 131 is irradiated with oxygen (O2) through a shielding mask 330. Figure 7 This diagram shows an intermediate fabrication being irradiated with O2 plasma 320 through a masking mask 330. The reason for using the masking mask 330 is to prevent the light-emitting layer 141 from being irradiated with O2 plasma 320. The term "part of the surface portion 131" refers to the portion of the hydrophobic portion 132 that occupies most of the surface portion 131, excluding the portion that contacts the light-emitting layer 141.
[0182] The areas irradiated with O2 plasma 320 are ashed, removing fluorine compounds from these areas. Consequently, the concentration of fluorine atoms in the O2 plasma-irradiated areas of the surface portion 131 decreases. That is, the lignophalism and wettability of the O2 plasma-irradiated areas decrease. Therefore, as... Figure 7 As shown, the portion of the hydrophobic portion 132 that occupies most of the surface portion 131 and is irradiated with O2 plasma 320 becomes the hypohydrophobic portion 134 (see reference). Figure 7 Here, the hydrophobic portion 132 is only the part of the surface portion 131 that contacts the light-emitting layer 141.
[0183] Furthermore, by being irradiated with O2 plasma 320, the surface 135 of the low hydrophobic portion 134 becomes rougher than the surface 133 of the hydrophobic portion 132.
[0184] Next, a second functional layer 150 is formed in contact with the low hydrophobicity portion 134 and covering the light-emitting layer 141 (step S5). In this embodiment, step S5 includes step S51 of forming the electrode layer 151 and step S52 of forming the sealing layer 156.
[0185] In step S51, the electrode layer 151 is formed to cover at least a portion of the partition 130 and the light-emitting layer 141. Here, an ink liquid containing indium tin oxide nanoparticles is applied by inkjet printing, the solvent of the applied ink liquid is dried by methods such as vacuum drying, and the ink liquid is heated to 200°C, thereby achieving the desired effect. Figure 8 The electrode layer 151 is formed as shown. Figure 8 This is a diagram showing an intermediate manufactured product in a state where electrode layer 151 has been formed.
[0186] In step S51, the amount of ink applied is determined such that the thickness of the electrode layer 151 after the ink dries is a given thickness.
[0187] In step S52, by applying ink to the sealing layer 156, a sealing layer 156 is formed that covers at least a portion of the barrier 130 and the electrode layer 151. Step S52 includes steps S521 to S524.
[0188] First, ink containing epoxy resin or acrylic resin is applied by inkjet printing (step S521).
[0189] After applying the ink, the ink is left to stand for a certain period of time (step S522). This forms a layer. Next, the formed layer is leveled to make its thickness uniform (step S523).
[0190] Next, the homogenized layer is cured by irradiating it with ultraviolet light (step S524). In step S524, the wavelength of the irradiated ultraviolet light is between 350 nm and 400 nm. In step S524, either a metal halide lamp or an LED capable of emitting a single wavelength of ultraviolet light can be used. The ultraviolet light irradiation dose is, for example, 200 mJ / cm². 2 Above and 1000mJ / cm 2 the following.
[0191] Since a low-hydrophobic portion 134 is formed in the barrier 130, the ink in the second functional layer 150 is not repelled by the barrier 130 in step S5, and can be evenly applied.
[0192] The result of step S5 is that Figure 2 The functional device 100 shown is complete.
[0193] As explained above, according to this embodiment, the functional device 100 includes a partition 130, which has a hydrophobic portion 132 and a low hydrophobic portion 134 with lower hydrophobicity than the hydrophobic portion 132 on its surface portion 131. Furthermore, a first functional layer 140 is in contact with the hydrophobic portion 132, and a second functional layer 150 is in contact with the low hydrophobic portion 134.
[0194] Therefore, when the second functional layer 150 covering the first functional layer 140 is formed using a coating process, the ink in the second functional layer 150 is not repelled by the barrier 130. This ensures the uniformity of the thickness of the second functional layer 150. Consequently, it prevents a decrease in the quality of the functional device 100 caused by a decrease in the uniformity of the second functional layer 150. As a result, even when the second functional layer 150 is formed using a coating process, a high-quality functional device 100 can be manufactured. Therefore, the material of each layer can be used effectively, and high quality can be ensured.
[0195] Furthermore, the ink in the second functional layer 150 is not repelled by the barrier 130, thus easily forming a pore-free second functional layer 150. Therefore, the coverage of the sealing layer 156 of the second functional layer 150 can be improved, preventing moisture from penetrating the first functional layer 140 due to a decrease in the coverage of the sealing layer 156. Therefore, the reliability of the functional device 100 over time can be ensured.
[0196] Furthermore, since the barrier 130 has a hydrophobic portion 132, a sufficient amount of ink for the first functional layer 140 can be stored in the area defined by the barrier 130 when the first functional layer 140 is formed. Therefore, it is easy to form the first functional layer 140 of the desired thickness. In addition, since it is not necessary to form a relatively high barrier 130 to store the ink for the first functional layer 140, it is easy to manufacture the first functional layer 140 of the desired thickness without increasing the size of the functional device 100, and the quality of the functional device 100 can be ensured. Furthermore, since it is not necessary to form a relatively high barrier 130, the risk of reduced coverage of the second functional layer 150 is reduced.
[0197] By using a coating process to form the second functional layer 150, the operating energy can be reduced compared to forming it using a vacuum process, thus reducing the cost required to manufacture the functional device 100.
[0198] Furthermore, by forming the second functional layer 150 using a coating process, the functional device 100 can be manufactured at a lower temperature compared to a vacuum process. Therefore, functional devices 100 can be manufactured using substrates with low heat resistance, such as glass substrates and plastic substrates. Consequently, a wider variety of functional devices 100 can be manufactured.
[0199] Furthermore, the surface roughness of the low-hydrophobicity portion 134 135 is relatively large. More specifically, the surface roughness of the low-hydrophobicity portion 134 135 is larger than the surface roughness of the hydrophobic portion 132 133. Therefore, the second functional layer 150, which is formed to contact the surface 135 of the low-hydrophobicity portion 134, has improved adhesion to the surface 135. As a result, the improved sealing provided by the second functional layer 150 prevents moisture from entering the first functional layer 140 from the outside, thus ensuring the reliability of the functional device 100 over time.
[0200] Alternatively, the interior 136 of the partition 130 can also be made of the same material as the hydrophobic portion 132. That is, the interior 136 of the partition 130 can also contain a fluorinated compound as a hydrophobic component. In this case, the hydrophobicity of the interior 136 is relatively high. Furthermore, in step S21, the partition 130 is formed using an ink containing an acrylic resin material containing a fluorinated compound. Furthermore, in step S21, when an ink containing an acrylic resin material containing a fluorinated compound is used, the partition 130 formed by performing step S21 is in a state where the entire surface portion 131 is occupied by the hydrophobic portion 132. That is, the hydrophobic portion 132 has already been formed on the surface portion 131. Therefore, in step S21, when an ink containing an acrylic resin material containing a fluorinated compound is used, step S2 does not include step S22.
[0201] Furthermore, in the embodiments, the functional device 100 may not necessarily have a top-emitting structure.
[0202] (Variation Example 1)
[0203] The following is for reference Figure 9A The main difference between Modified Example 1 and the above-described implementation method will be explained. Figure 9A This is a cross-sectional view of the functional device 100 involved in Modified Example 1.
[0204] The sealing layer 156 of the functional device 100 in Modification 1 is divided into regions defined by the partition 130. Among the layers constituting the functional device 100, the sealing layer 156 occupies most of the layer thickness. Therefore, when the functional device 100 is subjected to deformation stress (e.g., bending stress), the stress applied to the sealing layer 156 increases, and the sealing layer 156 may sometimes break. However, if the sealing layer 156 is divided as in the functional device 100 of Modification 1, then stress mitigation occurs at those locations, and breakage of the sealing layer 156 can be suppressed.
[0205] In step S521 of the manufacturing method of the functional device 100 according to Modification 1, ink of the sealing layer 156 is applied to a portion of the partition 130 and the electrode layer 151, and to the area corresponding to the light-emitting area. In other respects, the manufacturing method of the functional device 100 according to Modification 1 is the same as the manufacturing method of the functional device 100 according to the Embodiment.
[0206] According to the functional device 100 involved in Modification Example 1, the same effect as that of the functional device 100 involved in the Embodiment can be obtained.
[0207] Furthermore, in variation example 1, such as Figure 9B Therefore, the second functional layer 150 may also include an inorganic layer 158 located on the sealing layer 156, in addition to the electrode layer 151 and the sealing layer 156. More specifically, the sealing layer 156 and the inorganic layer 158 may be alternately stacked on the electrode layer 151 and the spacer 130. Here, when the combination of the sealing layer 156 and the inorganic layer 158 is set as a pair, the second functional layer 150 may also include N pairs of such combinations. N is an integer greater than or equal to 1. In addition, for the sealing layer 156 and the inorganic layer 158, the thickness of the layer above the spacer 130 is thinner than that above the light-emitting layer 141.
[0208] The material of inorganic layer 158 is an inorganic compound.
[0209] like Figure 9B As shown, when the functional device 100 has an inorganic layer 158, step S52 includes step S525 in addition to steps S521 to S524. Step S525 is the step of forming the inorganic layer 158 on the sealing layer 156 by inkjet printing. Furthermore, the operation of forming the sealing layer 156 on the inorganic layer 158 and forming the inorganic layer 158 on the formed sealing layer 156 is performed until N pairs of sealing layers 156 and inorganic layers 158 are formed.
[0210] like Figure 9B As shown, when the second functional layer 150 has an inorganic layer 158, the moisture permeability of the second functional layer 150 can be reduced. Therefore, the reliability of the functional device 100 over time can be more reliably ensured.
[0211] In addition, such as Figure 9B As shown, in the case where the second functional layer 150 has a pair of multiple sealing layers 156 and inorganic layers 158, they can be connected without being separated according to each area defined by the dike 130.
[0212] (Variation Example 2)
[0213] The following is for reference Figure 10 The main difference between Modified Example 2 and the above-described implementation method will be explained. Figure 10 This is a cross-sectional view of the functional device 100 involved in Variation Example 2.
[0214] The first functional layer 140 of the functional device 100 involved in Modification Example 2 is composed of a light-emitting layer 141, a hole injection layer 142, a hole transport layer 143, and an electron injection layer 144.
[0215] <Hole Injection Layer 142>
[0216] Hole injection layer 142 is located on electrode layer 120. Hole injection layer 142 is the layer that injects holes into light-emitting layer 141. The material of hole injection layer 142 is an organic material such as polythiophene-based material. Specifically, the material of hole injection layer 142 is poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), also known as PEDOT:PSS. PEDOT:PSS is a conductive polymer material.
[0217] <Hole Transport Layer 143>
[0218] Hole transport layer 143 is formed on hole injection layer 142 to cover hole injection layer 142. Hole transport layer 143 is a layer that transports holes injected by hole injection layer 142 to light-emitting layer 141. In addition, hole transport layer 143 is also a layer that prevents electrons injected by electron injection layer 144 from entering hole injection layer 142. The material of hole transport layer 143 is, for example, poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)-diphenylamine), also known as TFB.
[0219] <Electron Injection Layer 144>
[0220] The electron injection layer 144 is formed to cover the light-emitting layer 141. The material of the electron injection layer 144 is a transparent oxide semiconductor such as zinc oxide.
[0221] Next, the manufacturing method of the functional device 100 involved in Modification Example 2 will be described.
[0222] In addition to step S31 described above, step S3 also includes steps S301, S302, and S321. Step S301 is the step of forming a hole injection layer 142 in the light-emitting region after step S2 is completed. Step S302 is the step of forming a hole transport layer 143 to cover the hole injection layer 142 after step S301 is completed. Step S321 is the step of forming an electron injection layer 144 to cover the light-emitting layer 141 after step S31 is completed.
[0223] In steps S301, S302, and S321, ink from each layer is applied to the light-emitting area, and the solvent of the applied ink is dried by methods such as vacuum drying. The substrate 110 is then heated as needed. This forms a hole injection layer 142, a hole transport layer 143, and an electron injection layer 144.
[0224] In Modification 2, in step S4, O2 plasma 320 is irradiated through a shielding mask 330, thereby preventing the light-emitting layer 141, hole injection layer 142, hole transport layer 143 and electron injection layer 144 from being irradiated by O2 plasma 320.
[0225] In addition, the manufacturing method of the functional device 100 in Modification 2 is the same as that of the functional device 100 in Embodiment 2. Furthermore, in Modification 2, by performing step S4, the portion of the surface portion 131 other than the portion that contacts the light-emitting layer 141, the hole injection layer 142, the hole transport layer 143, and the electron injection layer 144 becomes a low hydrophobic portion 134.
[0226] According to the functional device 100 involved in Modification Example 2, the same effect as that of the functional device 100 involved in the Embodiment can be obtained.
[0227] (Variation Example 3)
[0228] The following is for reference Figure 11 The main difference between variant example 3 and the above-described implementation method will be explained. Figure 11 This is a cross-sectional view of the functional device 100 involved in Variation Example 3.
[0229] The functional device 100 involved in Modification Example 3 is an organic transistor device. Figure 11 The functional device 100 shown is an organic transistor device having a bottom gate structure and a top contact structure.
[0230] The electrode layer 120 of the functional device 100 is composed of a gate electrode layer 121 and a gate insulating layer 122. Furthermore, the first functional layer 140 of the functional device 100 is composed of an organic semiconductor layer 145. The second functional layer 150 is composed of an electrode layer 151 and a protective layer 157, with the electrode layer 151 consisting of a source electrode 152 and a drain electrode 153.
[0231] <Gate electrode layer 121>
[0232] The gate electrode layer 121 is located on the substrate 110, and the material of the gate electrode layer 121 is, for example, molybdenum.
[0233] <Gate insulating layer 122>
[0234] The gate insulating layer 122 is a layer that covers the gate electrode layer 121, and the material of the gate insulating layer 122 is, for example, an olefin polymer.
[0235] <Organic Semiconductor Layer 145>
[0236] The organic semiconductor layer 145 covers the gate insulating layer 122 and is grounded to the region defined by the barrier 130, connected to the hydrophobic portion 132. The material of the organic semiconductor layer 145 is pentacene. In addition to pentacene, the material of the organic semiconductor layer 145 may also be low molecular weight organic semiconductor materials such as tetraphenylene and phthalocyanine compounds, high molecular weight organic semiconductor materials such as polythiophene and polystyrene, and carbon nanotubes, etc.
[0237] <Source electrode 152 and drain electrode 153>
[0238] Source electrode 152 and drain electrode 153 are electrodes used to form a channel. Source electrode 152 and drain electrode 153 are located directly above organic semiconductor layer 145, covering at least a portion of the barrier 130 and organic semiconductor layer 145. Source electrode 152 and drain electrode 153 are configured to be spaced apart from each other by a certain distance (e.g., several μm) and opposite each other. Furthermore, charge carriers flow between source electrode 152 and drain electrode 153, thereby giving the functional device 100 semiconductor characteristics. To ensure a longer charge carrier path, source electrode 152 and drain electrode 153 may also be formed in a comb-like shape. The material of source electrode 152 and drain electrode 153 is, for example, gold.
[0239] Organic transistor devices with a top-contact structure, such as in Modified Example 3, exhibit stable semiconductor characteristics because the source electrode 152 and drain electrode 153 are positioned directly above the organic semiconductor layer 145.
[0240] The protective layer 157 covers at least a portion of the barrier 130, the source electrode 152, the drain electrode 153, and the organic semiconductor layer 145. A contact hole 400 is formed in the protective layer 157. The contact hole 400 extends through the protective layer 157 from the end of the protective layer 157 furthest from the substrate 110 to the drain electrode 153. By forming the contact hole 400, the drain electrode 153 can be electrically connected to the electrode of another functional device. Thus, for example, the drain electrode 153 of the functional device 100 according to Modified Example 3 can be electrically connected to the electrode of the organic EL device, and the light emission of the organic EL device can be controlled by the functional device 100 according to Modified Example 3.
[0241] In Modification 3, the interior 136 of the partition 130 is made of the same material as the hydrophobic portion 132. Both the interior 136 and the hydrophobic portion 132 contain photosensitive resin materials and fluorinated compounds as hydrophobic components. Therefore, the interior 136 exhibits higher hydrophobicity.
[0242] <Manufacturing Method of Functional Device 100>
[0243] The manufacturing method of the functional device 100 involved in Modification Example 3 includes the above-described steps S1 to S5, but the content related to the differences between organic EL devices and organic transistor devices and the differences in the materials constituting the interior 136 are different.
[0244] In step S1 of Modified Example 3, molybdenum is used as the material, and a layer is formed on the substrate 110 by sputtering. The layer is then patterned into a desired pattern using photolithography to form the gate electrode layer 121. Subsequently, an olefin polymer is applied to the substrate 110 and the gate electrode layer 121 by spin coating, and the layer is heated to form the gate insulating layer 122.
[0245] Modification 3 is identical to step S2 of the embodiment except that it uses ink containing a photosensitive acrylic resin material containing fluorine compounds to form a barrier 130 with relatively high hydrophobicity and does not include step S22.
[0246] In step S3 of Modified Example 3, in the area defined by the partition 130, ink generated by dissolving pentene in an organic solvent is applied by inkjet printing, and the applied ink is vacuum dried and heated to form an organic semiconductor layer 145.
[0247] Step S4 in Variation Example 3 is the same as step S4 in Embodiment 3.
[0248] In step S5 of Modified Example 3, firstly, a source electrode 152 and a drain electrode 153 are formed, which are in contact with the low hydrophobicity portion 134 and cover the organic semiconductor layer 145. More specifically, ink containing dispersed gold nanoparticles is applied to a portion of the low hydrophobicity portion 134 and the organic semiconductor layer 145 by inkjet printing, thereby forming the source electrode 152 and the drain electrode 153. Here, the source electrode 152 and the drain electrode 153 are formed to be spaced apart from each other and facing each other. Next, a protective layer 157 is formed to cover the source electrode 152, the drain electrode 153, and the low hydrophobicity portion 134. Next, a contact hole 400 is formed in the protective layer 157 to expose the drain electrode 153.
[0249] According to the functional device 100 involved in Modification Example 3, the same effect as that of the functional device 100 involved in the Embodiment can be obtained.
[0250] Alternatively, the contact hole 400 may not be formed in the protective layer 157. In this case, the contact hole 400 is not formed in step S5.
[0251] (Other variations)
[0252] The hydrophobic component can be any compound containing fluorine or silicon atoms. That is, a silicon compound can be used instead of a fluorine compound as the hydrophobic component. In this case, the concentration of silicon atoms in the hydrophobic portion 132 is higher than the concentration of silicon atoms in the low hydrophobic portion 134. Specifically, the concentration of silicon atoms in the hydrophobic portion 132 is 5 atom% or more and 10 atom% or less, while the concentration of silicon atoms in the low hydrophobic portion 134 is 0 atom% or more and less than 5 atom%. When a silicon compound is used instead of a fluorine compound as the hydrophobic component, the contact angle of the hydrophobic portion 132 with respect to the ink in the first functional layer 140 is 20 degrees or more and 70 degrees or less, preferably 30 degrees or more and 60 degrees or less. Furthermore, in the same case, the contact angle of the low hydrophobic portion 134 with respect to the ink in the second functional layer 150 is 0 degrees or more and 30 degrees or less, preferably 0 degrees or more and 20 degrees or less.
[0253] When the hydrophobic component contained in the hydrophobic portion 132 and the hypohydrophobic portion 134 is a silicon compound, the same effect as when the hydrophobic component is a fluorine compound can be obtained.
[0254] Step S4 can be performed to reduce the concentration of the hydrophobic component contained in the hydrophobic part 132 so that a low hydrophobic part 134 is formed from a part of the hydrophobic part 132. Alternatively, the treatments shown in (A) to (C) below can be performed instead of plasma irradiation.
[0255] (A) In step S4, the substrate 110, on which the partition 130 and the first functional layer 140 are formed, may also be housed in a vacuum dryer 210 (see reference). Figure 19 The vacuum level of the receiving section 211 is reduced while the dike 130 is heated. For example, the vacuum level of the receiving section 211 is reduced to 10 Pa.
[0256] The fluorine compound produced by the CF4 plasma 310 bonds with the carbon atoms of the surface portion 131 and is thus introduced into the surface portion 131. The bond between the fluorine compound introduced into the surface portion 131 of the partition 130 by the CF4 plasma 310 and the carbon atoms of the surface portion 131 is weak and unstable. Therefore, the fluorine compound will detach from the surface portion 131 (liquid-phobic portion 132) over time. This detachment can be accelerated by heating the partition 130 and reducing the pressure of the atmosphere surrounding the partition 130.
[0257] (B) In step S4, a portion of the hydrophobic portion 132 may also be irradiated with ultraviolet light.
[0258] (C) In step S4, a portion of the hydrophobic portion 132 may be removed to expose the interior 136 of the partition 130. Thus, the less hydrophobic interior 136 is located on the surface portion 131 of the partition 130, and the less hydrophobic portion is formed on the surface portion 131. That is, a less hydrophobic portion 134 is formed on the surface portion 131.
[0259] Sandblasting and mechanical grinding can also be performed when a portion of the hydrophobic part 132 is removed.
[0260] Furthermore, in step S4, if either process (B) or (C) is performed, the surface roughness of the surface 135 of the low hydrophobic portion 134 becomes greater than the surface roughness of the surface 133 of the hydrophobic portion 132. In particular, the surface roughness changes significantly by performing process (C). Therefore, the adhesion of the second functional layer 150 to the surface 135 is improved, and the sealing performance provided by the second functional layer 150 is improved, thus preventing moisture from entering from the outside and ensuring the reliability of the functional device 100 over time.
[0261] Furthermore, in step S4, processes (A) and (C) are performed with the premise that the hydrophobicity of the interior 136 of the barrier 130 is relatively small. As in the embodiment, in step S21, when an ink containing a resin material that does not contain hydrophobic components such as fluorine compounds or silicon compounds is used as the material of the barrier 130, the hydrophobicity of the interior 136 of the barrier 130 becomes relatively small.
[0262] Alternatively, in step S4, plasma irradiation or ultraviolet light irradiation can be performed at a lower intensity to the extent that the first functional layer 140 remains undamaged. In this case, the processing of step S4 is performed without using the masking mask 330.
[0263] In step S211, the photosensitive resin material can also be applied using slit coating as another coating process. In this case, the scanning speed of the slit coating, which is a coating condition, is adjusted according to the required height of the slit 130.
[0264] Alternatively, the electrode layer 120 can be ashed using O2 plasma or atmospheric pressure plasma before irradiating the surface portion 131 of the barrier 130 with CF4 plasma 310. The advantages of ashing the electrode layer 120 are as follows:
[0265] (I) When ashing is performed using O2 plasma or atmospheric pressure plasma, the electrode layer 120 becomes a state with very few carbon atoms. Fluorine compounds generated by CF4 plasma 310 bond with carbon atoms in the surface portion 131 and are thus introduced into the surface portion 131. Therefore, by ashing the electrode layer 120, fluorine compounds are not easily introduced into the surface of the electrode layer 120, but are easily introduced into the surface portion 131 of the diaphragm 130 made of resin material.
[0266] (II) If a fluorine compound is introduced onto the surface of electrode layer 120, the hydrophobicity of the surface of electrode layer 120 increases. When the ink of the first functional layer 140 is applied to the surface of electrode layer 120, it will be repelled, and a highly uniform light-emitting layer 141 cannot be formed. In other words, by ashing electrode layer 120 and reducing the number of carbon atoms on the surface of electrode layer 120 in advance, irradiation with CF4 plasma 310 is performed. Even so, the increase in hydrophobicity of the surface of electrode layer 120 can be suppressed, and a highly uniform first functional layer 140 can be formed.
[0267] The functional device 100 can also be a quantum dot light-emitting device. In this case, the material of the light-emitting layer 141 is an inorganic compound, such as a cadmium selenide compound, which is formed into quantum dots. The emission color of the quantum dot material changes depending on the particle size; the larger the particle size, the more red the emission. Therefore, the inks 41R, 41G, and 41B of the red light-emitting layer 141R, the green light-emitting layer 141G, and the blue light-emitting layer 141B each contain materials with different particle sizes (i.e., quantum dot materials).
[0268] Furthermore, in step S311, ink 41, in which inorganic compounds in a quantum dot state are dispersed, is coated using a coating process such as inkjet printing. Here, ink 41 contains cadmium-selenium based inorganic materials, etc. For these inks 41, the cadmium-selenium based inorganic materials, etc., are dispersed using an organic solvent as the dispersion medium, and the concentration of the material is 0.5% by weight or more and 10% by weight or less.
[0269] The ink 41 used as the light-emitting layer 141 can also be any ink in which indium phosphide, copper indium sulfide, silver indium sulfide, or inorganic materials with perovskite structure are dispersed.
[0270] Furthermore, the functional device 100 can also be a color-changing filter device that changes the emitted color. In this case, the first functional layer 140 of the functional device 100 comprises a layer formed of quantum dot material. The layer formed of quantum dot material can be formed by inkjet printing.
[0271] Furthermore, the functional device 100 can also be a sensor. In this case, the first functional layer 140 of the functional device 100 includes a layer formed of a piezoelectric material. Additionally, when the functional device 100 is a sensor, it is self-evident that the functional device 100 has an electrode layer 151 that functions as an electrode. The electrode layer 151 and the layer formed of the piezoelectric material can be formed by inkjet printing.
[0272] In the embodiments, variations 1 and 2, a sealing layer 156 may be formed after a thin film of silicon nitride is formed on the electrode layer 151.
[0273] The first functional layer 140 is not limited to the layers shown in the embodiments and variations 1 to 3, as long as it includes one or more of the light-emitting layer 141, hole injection layer 142, hole transport layer 143, electron injection layer 144 and organic semiconductor layer 145.
[0274] Furthermore, the second functional layer 150 is not limited to the layers shown in the embodiments and variations 1 to 3, as long as it includes one or more of the electrode layer 151, the sealing layer 156, and the protective layer 157.
[0275] (Example 1)
[0276] The inventors have manufactured a functional device 100 as an organic EL device using any of the manufacturing methods described above, including embodiments 1 to 3 and other modifications. Hereinafter, reference will be made to... Figures 12 to 15 The manufacture of the functional device 100 (i.e., organic EL device) is described.
[0277] First, an AGC-made glass with a thickness of 0.5 mm was prepared as the substrate 110. Then, a silver-palladium-copper alloy was used as the material, and a layer was formed on the substrate 110 by sputtering. The layer was then patterned into a desired pattern by photolithography, thereby forming the electrode layer 120.
[0278] Next, an ink containing a fluorinated compound and an AGC-based photosensitive acrylic resin was spin-coated onto the substrate 110. The coated ink was pre-baked at 100°C to form a layer. Ultraviolet light with a wavelength of 365 nm was irradiated onto this layer to form a rectangular pattern, followed by formal baking. This formed a barrier 130. In Example 1, the barrier 130 was formed with a height of 1 μm. As a result, a... Figure 12 The intermediate product shown. Figure 12 This is a cross-sectional view showing an intermediate manufactured part in which an electrode layer 120 and a spacer 130 have been formed on a substrate 110.
[0279] exist Figure 12 In the intermediate product shown, fluorine compounds segregate on the surface portion 131 of the partition 130. The surface portion 131 has high hydrophobicity and low wettability. That is, it can be said that the surface portion 131 is occupied by the hydrophobic portion 132. Furthermore, the contact angle of the hydrophobic portion 132 of the partition 130 with respect to the ink 41R is 20 degrees or more and 70 degrees or less, preferably 30 degrees or more and 60 degrees or less. Additionally, the interior 136 has relatively high hydrophobicity.
[0280] Next, in the light-emitting area defined by the partition 130, ink 41R, which is the material of the red light-emitting layer 141R, was applied by inkjet printing.
[0281] Then, the intermediate product is dried by vacuum drying. More specifically, the solvent of the applied ink 41R is dried by reducing the pressure of the atmosphere surrounding the ink 41R. The result is, as... Figure 13 As shown, a red luminescent layer 141R was formed. Figure 13 This is a cross-sectional view showing an intermediate manufactured object in a state where a red luminescent layer 141R has been formed.
[0282] Figure 14 It is a diagram showing the state of an intermediate fabrication being irradiated with O2 plasma through a shielding mask.
[0283] After the red luminescent layer 141R is formed, O2 plasma 320 is irradiated onto the partition 130. At this time, the O2 plasma 320 is irradiated through a shielding mask 330, preventing the red luminescent layer 141R from being irradiated with O2 plasma 320. Through this process, fluorine compounds are removed from the surface portion 131 of the partition 130 that is not connected to the red luminescent layer 141R, resulting in a lower density and concentration of fluorine atoms compared to the surface portion 131 of the partition 130 that is connected to the red luminescent layer 141R. As a result, as... Figure 14 As shown, the portion of the hydrophobic portion 132 that is not in contact with the red emitting layer 141R is called the low hydrophobic portion 134. The hydrophobic portion 132 is only the portion of the surface portion 131 that is in contact with the red emitting layer 141R. In addition, the contact angle of the low hydrophobic portion 134 with respect to the ink of the second functional layer 150 is 0 degrees or more and 30 degrees or less, preferably 0 degrees or more and 20 degrees or less.
[0284] Next, ink containing indium tin oxide (ITO) nanoparticles was applied to a portion of the barrier 130 and the red emitting layer 141R using an inkjet printing method. The solvent of the applied ink was evaporated by vacuum drying, and the ink was heated to 200°C. Thus, an electrode layer 151 covering at least a portion of the barrier 130 and the red emitting layer 141R was formed.
[0285] Next, ink containing photosensitive acrylic resin material (i.e., the ink of the sealing layer 156) is applied to a portion of the diaphragm 130 and the electrode layer 151 using an inkjet printing method. The height (i.e., thickness) of the applied ink is approximately 4 μm. Then, using an LED light, the irradiation time is adjusted to achieve an irradiation dose of 1000 mJ / cm². 2 Ultraviolet light with a wavelength of 395 nm is irradiated onto the ink in the sealing layer 156, causing the acrylic resin material to cure. The result is the formation of the sealing layer 156, as... Figure 15 As shown, the functional device 100, which serves as an organic EL device, has been completed. Figure 15 This is a cross-sectional view showing the structure of the functional device 100 involved in Embodiment 1.
[0286] By configuring the device structure of the functional device 100 as shown in any of the above-described embodiments and variations 1 to 3, and other variations, a highly uniform electrode layer 151 and a sealing layer 156 are formed using inkjet printing.
[0287] Therefore, it can be said that even when both the first functional layer 140 and the second functional layer 150 are formed using a coating process, the quality of the manufactured functional device 100 can be ensured. Furthermore, compared to forming using a vacuum process, it can reduce the manufacturing cost of the functional device 100 and allow for manufacturing at relatively low temperatures. The ability to manufacture the functional device 100 at low temperatures means that substrates with low heat resistance, such as glass substrates and plastic substrates, can be used as the substrate 110, thus enabling greater flexibility in the substrate 110.
[0288] (Example 2)
[0289] The inventors manufactured a functional device 100 as an organic EL device using a method different from that in Example 1, from any of the above-described embodiments and modifications 1 to 3, as well as any other modification. Hereinafter, reference will be made to... Figures 16 to 20 The main differences from Example 1 are explained in the fabrication of the functional device 100 (i.e., organic EL device).
[0290] First, a substrate 110 is prepared, and an electrode layer 120 is formed on the substrate 110.
[0291] Next, an ink containing a photosensitive acrylic resin material manufactured by Nikko Chemical was spin-coated onto the substrate 110. The coated ink was pre-baked at 100°C to form a layer. Ultraviolet light with a wavelength of 365nm was irradiated onto this layer to form a rectangular pattern, followed by formal baking. This resulted in the formation of a barrier 130. Furthermore, in Example 2, the barrier 130 was formed with a height of 1μm. As a result, a... Figure 16 The intermediate product shown. Figure 16 This is a cross-sectional view showing an intermediate manufactured part in which an electrode layer 120 and a spacer 130 have been formed on a substrate 110.
[0292] In addition, the ink used to form the barrier 130 mainly contains acrylic resin material, and the barrier 130 formed has relatively low hydrophobicity on both the surface 131 and the interior 136.
[0293] Next, the barrier 130 was irradiated with O2 plasma 320. Then, CF4 plasma 310 was irradiated onto the barrier 130, and a fluorine compound was introduced into the surface portion 131 of the barrier 130. Figure 17 This diagram illustrates the state of an intermediate product irradiated with CF4 plasma 310. Irradiation with CF4 plasma 310 increases the concentration of fluorine atoms on the surface portion 131, thereby increasing the hydrophobicity of most of the surface portion 131. That is, as... Figure 17 As shown, a hydrophobic portion 132 is formed on the surface portion 131.
[0294] Next, in the luminescent area defined by the partition 130, ink 41R, serving as the red luminescent layer 141R, is applied using an inkjet printing method, and the applied ink 41R is then vacuum-dried. The result is as follows: Figure 18 As shown, a red luminescent layer 141R was formed. Figure 18 This is a cross-sectional view showing an intermediate manufactured object in a state where a red luminescent layer 141R has been formed.
[0295] Next, as Figure 19 As shown, Figure 17 The intermediate product is contained in the receiving section 211 of the vacuum dryer 210. Figure 19 This is a cross-sectional view showing the intermediate manufactured product being housed within the vacuum dryer 210. The vacuum dryer 210 also includes a housing 211 and an exhaust pump 212.
[0296] After the intermediate manufactured material is placed into the container 211, the air inside the container 211 is vented by the exhaust pump 212, thereby reducing the vacuum level of the container 211 and heating the partition 130 at 60 degrees.
[0297] Fluorine compounds produced by CF4 plasma 310 bond with carbon atoms in surface portion 131 and are thus introduced into surface portion 131. The bond between the fluorine compounds introduced into surface portion 131 of the partition 130 via CF4 plasma 310 and the carbon atoms in surface portion 131 is weak and unstable. Therefore, the fluorine compounds will detach from surface portion 131 (liquid-phobic portion 132) over time. This detachment is accelerated by heating the partition 130 and reducing the pressure of the atmosphere surrounding the partition 130.
[0298] Therefore, fluorine compounds are removed from the portion of the hydrophobic region 132 that is not in contact with the red luminescent layer 141R, resulting in a decrease in the density of fluorine atoms in that portion. Consequently, the hydrophobicity of this portion decreases, while its wettability increases. That is, as... Figure 19 As shown, this portion of the surface portion 131 becomes the low hydrophobic portion 134.
[0299] On the other hand, fluorine compounds were not removed from the portion of the hydrophobic portion 132 that came into contact with the red luminescent layer 141R.
[0300] Next, similarly to Example 1, an electrode layer 151 and a sealing layer 156 were formed. The result is as follows: Figure 20 As shown, the functional device 100, which serves as an organic EL device, has been completed. Figure 20 This is a cross-sectional view showing the structure of the functional device involved in Embodiment 2.
[0301] Therefore, by setting the device structure of the functional device 100 to any of the device structures described above in the embodiments and variations 1 to 3 and other variations, a highly uniform electrode layer 151 and a sealing layer 156 are formed by inkjet printing.
[0302] Therefore, it can be said that even when both the first functional layer 140 and the second functional layer 150 are formed using a coating process, the quality of the manufactured functional device 100 can be ensured. Furthermore, it can be said that compared to forming using a vacuum process, the functional device 100 can be manufactured at a lower cost and at a lower temperature. The ability to manufacture the functional device 100 at low temperatures means that the substrate 110 can be made more flexible.
[0303] (Example 3)
[0304] The inventors have manufactured a functional device 100 as a quantum dot light-emitting device using any of the manufacturing methods described above, variations 1 to 3, and other variations. Hereinafter, the manufacturing of the functional device 100 (i.e., the quantum dot light-emitting device) will be mainly described in terms of differences from Example 1.
[0305] As a quantum dot luminescent material, an inorganic compound with a particle size of tens of nm and belonging to the cadmium-selenium system was used.
[0306] In the fabrication of quantum dot light-emitting devices, an ink with a particle size of several tens of nm and an inorganic compound of cadmium selenide dispersed in an aromatic organic solvent is applied to the light-emitting area by inkjet printing to form a light-emitting layer.
[0307] In addition to the difference in the material of the light-emitting layer 141, the functional device 100, which is a quantum dot light-emitting device, is formed by the same manufacturing process as in Example 1.
[0308] Therefore, according to the above-described embodiments and any of the variations 1 to 3 and other variations, it can be said that not only organic EL devices but also quantum dot light-emitting devices can be manufactured in the same way.
[0309] (Example 4)
[0310] The inventors manufactured a functional device 100 as an organic transistor device by any of the manufacturing methods of the above-described embodiments and modifications 1 to 3, as well as any other modifications.
[0311] First, an AGC-made glass with a thickness of 0.5 mm is prepared as the substrate 110. Then, molybdenum is used as the material and a layer is formed on the substrate 110 by sputtering. The layer is then patterned into a desired pattern by photolithography, thereby forming the gate electrode layer 121.
[0312] Next, an olefin polymer is applied to the substrate 110 and the gate electrode layer 121 by spin coating to form a layer, which is then heated to 130 degrees Celsius to cure it. Thus, a gate insulating layer 122 covering the gate electrode layer 121 is formed.
[0313] Next, an ink containing a photosensitive acrylic resin material with fluorine compound and AGC (Automatic Guided Vehicle) was applied to the substrate 110. The applied ink was pre-baked at 100°C to form a layer. Ultraviolet light with a wavelength of 365 nm was irradiated onto this layer to form a rectangular pattern, followed by formal baking. This formed the barrier 130. Furthermore, in Example 4, the barrier 130 was formed with a height of 0.3 μm or more and 1 μm or less.
[0314] Fluorine compounds segregate on the surface portion 131 of the partition 130, resulting in high hydrophobicity and low wettability. That is, the surface portion 131 is occupied by the hydrophobic portion 132. The contact angle between the hydrophobic portion 132 and the ink on the organic semiconductor layer 145 is 20 degrees or more and 70 degrees or less, preferably 30 degrees or more and 60 degrees or less. Furthermore, the interior portion 136 exhibits relatively high hydrophobicity.
[0315] Next, in the area defined by the dike 130, ink generated by dissolving pentene in an organic solvent was applied using an inkjet printing method.
[0316] Then, the solvent of the coated ink was dried by vacuum drying, and the ink was heated to 100°C. As a result, an organic semiconductor layer 145 was formed.
[0317] Next, using the same method as in Example 1, the barrier 130 was irradiated with O2 plasma 320. This removed fluorine compounds from the portion of the barrier 130 where the organic semiconductor layer 145 was not in contact with the hydrophobic portion 132, reducing the hydrophobicity and increasing the wettability of that portion. In other words, this portion of the surface portion 131 became a low hydrophobic portion 134. Furthermore, the contact angle of the low hydrophobic portion 134 with respect to the ink in the second functional layer 150 was 0 degrees or more and 30 degrees or less, preferably 0 degrees or more and 20 degrees or less.
[0318] Next, ink containing dispersed gold nanoparticles is applied to a portion of the low hydrophobicity layer 134 and the organic semiconductor layer 145 using an inkjet printing method, forming a source electrode 152 and a drain electrode 153. Here, the source electrode 152 and the drain electrode 153 are formed to be spaced apart from each other and opposite each other.
[0319] Next, a protective layer 157 is formed covering the source electrode 152, drain electrode 153, and the low hydrophobicity portion 134. Then, a contact hole 400 is formed to expose the drain electrode 153. As a result, the process is complete. Figure 11 The functional device 100 shown is an organic transistor device.
[0320] Therefore, according to the above-described embodiments and any of the variations 1 to 3 and other variations, it can be said that organic transistor devices can also be manufactured in the same way.
[0321] According to this disclosure, a functional device that can effectively use materials and ensure high quality, as well as a method for manufacturing the functional device, can be provided.
[0322] Industrial availability
[0323] The functional devices and manufacturing methods disclosed herein are suitable for use in functional devices such as organic EL devices, quantum dot light-emitting devices, color conversion filter devices, organic transistor devices, and sensor devices.
Claims
1. A functional device, comprising: The dike has a hydrophobic portion on its surface and a hypohydrophobic portion with lower hydrophobicity compared to the hydrophobic portion. The first functional layer is located in the area defined by the dike and is in contact with the hydrophobic portion; and The second functional layer is in contact with the hypohydrophobic portion and covers the first functional layer. The surface portion includes the side portion of the dike, and a portion of the side portion is provided with the hypohydrophobic portion.
2. The functional device according to claim 1, wherein, The concentration of fluorine atoms in the hydrophobic region is higher than the concentration of fluorine atoms in the hypohydrophobic region.
3. The functional device according to claim 2, wherein, The concentration of fluorine atoms in the liquid-repellent portion is 5 atom% or more and 10 atom% or less. The concentration of fluorine atoms in the hypohydrophobic region is above 0 atom% and below 5 atom%.
4. The functional device according to claim 1, wherein, The concentration of silicon atoms in the hydrophobic region is higher than the concentration of silicon atoms in the low hydrophobic region.
5. The functional device according to claim 4, wherein, The concentration of silicon atoms in the hydrophobic portion is 5 atom% or more and 10 atom% or less. The concentration of silicon atoms in the hypohydrophobic region is above 0 atom% and below 5 atom%.
6. The functional device according to any one of claims 1 to 5, wherein, The contact angle between the hydrophobic portion and the ink, which is the material of the first functional layer, is 20 degrees or more and 70 degrees or less. The contact angle between the hypohydrophobic portion and the ink, which is the material of the second functional layer, is 0 degrees or more and 30 degrees or less.
7. The functional device according to any one of claims 1 to 5, wherein, The surface roughness of the hypohydrophobic portion is greater than that of the hydrophobic portion.
8. The functional device according to any one of claims 1 to 5, wherein, The first functional layer comprises one or more of the following layers: a light-emitting layer, a hole injection layer, a hole transport layer, an electron injection layer, and an organic semiconductor layer.
9. The functional device according to any one of claims 1 to 5, wherein, The second functional layer comprises one or more of an electrode layer, a sealing layer, and a protective layer.
10. The functional device according to any one of claims 1 to 5, wherein, The boundary between the hydrophobic portion and the hypohydrophobic portion is located between the first functional layer and the second functional layer.
11. A method for manufacturing a functional device, comprising: The step of forming a barrier on the substrate; The step of forming the first functional layer, wherein the first functional layer is located in the area defined by the dike and is in contact with the hydrophobic portion of the surface of the dike; The step of forming a low-hydrophobic portion on a portion of the side surface of the dike included in the surface portion, wherein the low-hydrophobic portion has relatively low hydrophobicity compared to the hydrophobic portion; and The step of forming the second functional layer, wherein the second functional layer is in contact with the hypohydrophobic portion and covers the first functional layer.
12. The method for manufacturing a functional device according to claim 11, wherein, The hydrophobic portion contains hydrophobic components containing fluorine atoms or silicon atoms. The step of forming the hypohydrophobic portion is to reduce the concentration of the hydrophobic component contained in the hydrophobic portion and generate the hypohydrophobic portion from a portion of the hydrophobic portion.
13. The method for manufacturing a functional device according to claim 12, wherein, The step of forming the hypohydrophobic portion is to subject a portion of the hypohydrophobic portion to plasma irradiation.
14. The method for manufacturing a functional device according to claim 12, wherein, The step of forming the hypohydrophobic portion is to irradiate a portion of the hypohydrophobic portion with ultraviolet light.
15. The method for manufacturing a functional device according to claim 12, wherein, The step of forming the barrier includes the step of forming the hydrophobic portion on the surface portion. The step of forming the low hydrophobicity portion involves accommodating the substrate in which the barrier and the first functional layer are formed in the accommodating portion, heating the barrier, and reducing the vacuum level of the accommodating portion.
16. The method for manufacturing a functional device according to claim 11, wherein, The step of forming the barrier includes the step of forming the hydrophobic portion on the surface portion. The step of forming the hypohydrophobic portion is to remove a portion of the hydrophobic portion to expose the interior of the dike.
17. The method for manufacturing a functional device according to claim 16, wherein, The step of forming the low hydrophobicity portion is a step of removing a portion of the hydrophobicity portion by sandblasting.
18. The method for manufacturing a functional device according to claim 16, wherein, The step of forming the hypohydrophobic portion is a step of removing a portion of the hydrophobic portion by mechanical grinding.
19. The method for manufacturing a functional device according to any one of claims 11 to 18, wherein, The step of forming the second functional layer is to form the second functional layer such that the boundary between the hydrophobic portion and the hypohydrophobic portion is located between the first functional layer and the second functional layer.
Citation Information
Patent Citations
JP1974090415A
Manufacturing method of color conversion filter
JP2003229260A
Manufacturing method of substrate with patterned thin film, substrate, manufacturing method of organic el element, and organic el element
JP2004288469A
Active matrix substrate, electro-optical device, manufacturing method of electro-optical device and electronic equipment
JP2008108737A
Method for manufacturing organic semiconductor device
JP2012216683A