Wafer position correction method, device and storage medium

Abstract

The present application provides a method, device and storage medium for wafer position correction. The method includes: obtaining etching parameters of a preset point on an etched first wafer, the etching parameters including position information and etching rate, determining the position information of the center point of the etching rate distribution diagram of the first wafer according to the etching parameters of the preset point, and correcting the position of a second wafer to be etched according to the position information of the center point of the etching rate distribution diagram of the first wafer, so that the center of the second wafer coincides with the center point of the etching rate distribution diagram of the first wafer. Thus, the position of the wafer can be automatically corrected, avoiding the problem of human error and long working time of the machine in the manual correction method, and improving the accuracy and efficiency of the correction.

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