Semiconductor memory device

Abstract

Embodiments provide a semiconductor storage device that appropriately performs an operation. The semiconductor storage device of the embodiments includes a first conductive layer extending in a first direction; a second conductive layer arranged separately from the first conductive layer in a second direction intersecting the first direction and extending in the first direction; a plurality of semiconductor layers provided between the first conductive layer and the second conductive layer, arranged in the first direction, including a first portion facing the first conductive layer and a second portion facing the second conductive layer; a plurality of first memory cells each provided between the first conductive layer and the plurality of semiconductor layers; and a plurality of second memory cells each provided between the second conductive layer and the plurality of semiconductor layers. A gap is provided between two semiconductor layers adjacent in the first direction.

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