A method for improving the anti-contamination ability of Trench Schottky
By depositing an insulating dielectric layer on the surface of the Trench Schottky diode chip and forming an insulating dielectric Spacer, the barrier defect problem caused by contamination is solved, effective protection of the Schottky junction is achieved, and product reliability is improved.
Patent Information
- Application Number
- CN202111489479.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-12-08
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2041-12-08
AI Technical Summary
During the manufacturing process, the contamination introduced by the Trench Schottky diode is limited due to process capability limitations, resulting in unclear etching of the oxide layer, and the residual oxide layer affects the contact between the barrier metal and the single crystal silicon, which in turn affects the formation of the Schottky junction and causes product reliability problems.
A layer of insulating dielectric layer is deposited on the surface of the chip to cover the stain, and the insulating dielectric Spacer is used to form the insulating dielectric spacer, covering the barrier area with incomplete edges of the stain, thereby isolating the barrier defect area and the front metal and preventing overcurrent.
By forming an insulating medium Spacer, the barrier defect area caused by contamination is effectively isolated, overcurrent during reverse operation is avoided, and the reliability of the Trench Schottky diode is improved.