Equipment and methods for handling enhanced microelectronic devices

Abstract

This application relates to an apparatus and method for handling enhanced microelectronic devices. The apparatus includes: a connector; a connector tip coupled to the connector and having a connector tip surface configured to receive a microelectronic device thereon; a first 3D sensor carried by the connector; a pickup arm drive; a pickup arm coupled to the pickup arm drive and having a pickup surface configured to receive the microelectronic device thereon; and a second 3D sensor carried by the pickup arm drive. The apparatus further includes a controller configured to: receive first image data from the first 3D sensor, the first image data including image data of the pickup surface of the pickup arm; and receive second image data from the second 3D sensor, the second image data including image data of the connector tip surface of the connector tip.

Description

[0001] Priority Claim

[0002] This application claims the benefit of U.S. Provisional Patent Application No. 63 / 086,268, filed on October 1, 2020, entitled “Apparatus and Methods for Enhanced Microelectronic Device Handling”. Technical Field

[0003] The embodiments disclosed herein relate to apparatus and methods for enhanced handling of microelectronic devices. More specifically, the embodiments disclosed herein relate to methods and apparatus for reducing the likelihood of damage to microelectronic devices during physical handling of such devices. Background Technology

[0004] As the performance of electronic devices and systems improves, there is a growing need to enhance the performance of microelectronic components in such systems while maintaining or even reducing the form factor (e.g., length, width, and height) of the microelectronic devices or assemblies. These requirements are typically (but not exclusively) associated with mobile devices and high-performance devices. To maintain or reduce the footprint and height of component assemblies in the form of microelectronic devices (e.g., semiconductor dies), three-dimensional (3D) assemblies of stacked components equipped with so-called through-silicon vias (TSVs) for vertical electrical (e.g., signal, power, ground / bias) communication between stacked components are becoming more common. This is combined with reduced component thickness and the use of pre-fabricated dielectric films in the bonding lines (e.g., spaces between stacked components) to reduce bonding line thickness while increasing bonding line uniformity. Such dielectric films include, for example, so-called non-conductive films (NCFs) and wafer-level underfill (WLUFs), terms which are often used interchangeably. When the height of a 3D microelectronic device assembly is effectively reduced, the thickness of the microelectronic device (e.g., a semiconductor die) is reduced to about 50 μm or less, increasing the device's fragility and susceptibility to breakage under stress (specifically, compressive (e.g., shock) stress and bending stress experienced during handling (e.g., during pick-and-place operations). Reducing the thickness of the bonding wires also exacerbates the susceptibility to damage of such ultra-thin microelectronic devices, as the thin dielectric material (e.g., NCF) in the bonding wires may no longer provide any cushioning effect or the ability to accommodate particulate contaminants in the bonding wires when, for example, the device is stacked on top of another device to form a 3D assembly. Non-limiting examples of microelectronic device assemblies containing stacked microelectronic devices that may suffer stress-induced breakage include semiconductor memory die assemblies, and so-called high-bandwidth memory (HBMx), hybrid memory cubes (HMC), and chip-to-wafer (C2W) assemblies, either alone or in combination with other die functionalities (e.g., logic). Summary of the Invention

[0005] Embodiments of this disclosure include an apparatus for handling a microelectronic device. The apparatus includes: a connector; a connector tip coupled to the connector and having a connector tip surface configured to receive a microelectronic device thereon; a first 3D sensor carried by the connector; a pickup arm drive; a pickup arm coupled to the pickup arm drive and having a pickup surface configured to receive the microelectronic device thereon; and a second 3D sensor carried by the pickup arm drive. The apparatus further includes a controller configured to: receive first image data from the first 3D sensor, the first image data including image data of the pickup surface of the pickup arm; and receive second image data from the second 3D sensor, the second image data including image data of the connector tip surface of the connector tip.

[0006] Embodiments of this disclosure include a method comprising: moving a pickup arm to a first position relative to an engagement tip, wherein a pickup surface of the pickup arm is within the field of view of a first 3D sensor coupled to the engagement tip; capturing image data of the pickup surface via the first 3D sensor; and analyzing the image data of the pickup surface.

[0007] Embodiments of this disclosure include an apparatus for handling a microelectronic device. The apparatus includes: a connector; a connector tip coupled to the connector and having a connector tip surface configured to receive a microelectronic device thereon; a pickup arm drive; a pickup arm coupled to the pickup arm drive and having a pickup surface configured to receive the microelectronic device thereon; and at least one 3D sensor configured to capture image data of the connector tip surface and image data of the pickup surface. Attached Figure Description

[0008] Figure 1 A schematic diagram of an example pick-up and placement apparatus combined with a thermo-press bonding apparatus according to an embodiment of the present disclosure is shown, depicting a microelectronic device being removed from a dicing tape and transferred to the bonding tip of a bonding head for stacking on a substrate.

[0009] Figure 2 These are micrographs showing multiple stacked semiconductor dies with cracks;

[0010] Figure 3 It is a magnified photomicrograph showing a crack infiltrated by the underfill material in the joint line;

[0011] Figures 4A to 4F This illustration depicts an example of a pick-up operation that uses a pick-up arm and ejector of a pick-up and placement device to remove semiconductor dies from a dicing tape.

[0012] Figure 5A and 5B An example semiconductor die transfer operation is schematically depicted from the pick-up arm to the bonding tip of the bonding head;

[0013] Figure 6A and 6B An inspection system for a pickup and transfer device according to one or more embodiments of the present disclosure is schematically depicted;

[0014] Figure 7 An inspection system for a pickup and transfer device according to one or more embodiments of the present disclosure is schematically depicted;

[0015] Figure 8A and 8B A flowchart including a method for inspecting the pickup surface of a pickup arm and the engagement tip surface of an engagement tip according to embodiments of the present disclosure;

[0016] Figure 9 An inspection system for a pickup and transfer device according to one or more embodiments of the present disclosure is schematically depicted; and

[0017] Figure 10A and 10B A flowchart including a method for inspecting the active surface of a semiconductor die according to embodiments of the present disclosure. Detailed Implementation

[0018] Embodiments of this disclosure relate to methods and systems for enhancing the handling of such microelectronic devices by reducing the magnitude and inconsistent application of stresses applied to the microelectronic device during handling, for example during pick-and-place operations involving the removal of the microelectronic device from a group of such devices by a pick-up arm and the transfer of the removed device to the engagement tip of a joint for placement on a substrate or stacking with other devices.

[0019] As used herein, the terms “including,” “comprising,” “containing,” “characterized in,” and their grammatical equivalents are inclusive or open-ended terms that do not exclude additional, unlisted elements or methodological actions, and include the more restrictive terms “consisting of” and “substantially consisting of” and their grammatical equivalents.

[0020] As used herein, the term “may” in relation to materials, structures, features, or methodological actions indicates consideration for use in implementing embodiments of this disclosure, and this term is used preferentially over the more restrictive term “is” to avoid any implication that other compatible materials, structures, features, and methods may be used in combination with it.

[0021] As used herein, the terms "longitudinal," "vertical," "lateral," and "horizontal" refer to the principal plane of a substrate (e.g., substrate material, substrate structure, substrate configuration, etc.) in which one or more structures and / or features are formed, and are not necessarily defined by the Earth's gravitational field. A "lateral" or "horizontal" direction is a direction substantially parallel to the principal plane of the substrate, while a "longitudinal" or "vertical" direction is a direction substantially perpendicular to the principal plane of the substrate. The principal plane of the substrate is defined by the surface of the substrate having an area relatively larger than the other surfaces of the substrate.

[0022] As used herein, for ease of description, spatial relative terms (e.g., “below,” “under,” “down,” “bottom,” “above,” “above,” “top,” “front,” “back,” “left,” “right,” and the like) may be used to describe the relationship of one element or feature to another element(s), as illustrated in the figures. Unless otherwise specified, spatial relative terms are intended to cover not only the orientation depicted in the figures but also different orientations of the material. For example, if the material in the figures were reversed, then an element described as being “below,” “above,” “on,” or “top” of other elements or features would be oriented as being “below,” “under,” “down,” or “bottom” of other elements or features. Thus, those skilled in the art will understand that, depending on the context in which the terms are used, the term “above” can encompass both above and below orientations. Material may be oriented in other ways (e.g., rotated 90 degrees, reversed, flipped) and the spatial relative descriptors used herein shall be interpreted accordingly.

[0023] As used herein, the singular forms “a / an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0024] As used herein, the terms “configured” and “configuration” refer to the size, shape, material composition, orientation, and arrangement of one or more of the structures and devices that facilitate the operation of one or more of the structures and devices in a predetermined manner.

[0025] As used herein, the term "substantially" with respect to a given parameter, property, or condition means and includes, as understood by one of ordinary skill in the art, the degree to which a given parameter, property, or condition is satisfied within a certain range of variation (e.g., within acceptable manufacturing tolerances). By way of example, depending on the specific parameter, property, or condition that is substantially satisfied, it may be satisfied at least 90.0%, at least 95.0%, at least 99.0%, or even at least 99.9%.

[0026] As used herein, “about” or “approximately” with respect to a particular parameter includes the value and, as understood by one of ordinary skill in the art, the degree of variation relative to the value within acceptable tolerances for that particular parameter. For example, “about” or “approximately” with respect to a value may include additional values ​​within the range of 90.0% to 110.0% of the value, such as within the range of 95.0% to 105.0%, 97.5% to 102.5%, 99.0% to 101.0%, 99.5% to 100.5%, or 99.9% to 100.1%.

[0027] As used herein, the terms “layer” and “film” mean and include a level, sheet or coating of material residing on a structure, which may be continuous or discontinuous between portions of the material and may be conformal or nonconformal, unless otherwise indicated.

[0028] As used herein, the term "substrate" means and includes a base material or structure on which additional material is formed. A substrate can be a semiconductor substrate, a base semiconductor layer on a support structure, a metal electrode, or a semiconductor substrate on which one or more materials, layers, structures, or regions are formed. Materials on a semiconductor substrate can include (but are not limited to) semiconducting materials, insulating materials, conductive materials, etc. A substrate can be a conventional silicon substrate or other bulk substrate containing a layer of semiconducting material. As used herein, the term "bulk substrate" means and includes not only silicon wafers but also silicon-on-insulator ("SOI") substrates (e.g., silicon-on-sapphire ("SOS") and silicon-on-glass ("SOG") substrates), epitaxial silicon layers on a base semiconductor substrate, and other semiconductor or optoelectronic materials (e.g., silicon-germanium, germanium, gallium arsenide, gallium nitride, and indium phosphide). Substrates can be doped or undoped. The term "substrate" also means and includes organic substrates, such as substrates having multiple metal layers in the form of traces, with an inserted dielectric layer (e.g., a resin-glass braided polymer). For example, a typical BGA package consists of multiple dies and an encapsulation (e.g., epoxy molding compound (EMC)) on one side of an organic substrate and an array of solder balls on the other side.

[0029] As used herein, the term “microelectronic device” means and includes (by way of non-limiting examples) a semiconductor die, a die that exhibits functionality through non-semiconductor activity, a microelectromechanical system (MEMS) device, a substrate including multiple dies containing a conventional wafer, and other bulk substrates and portions of wafers and substrate segments containing more than one die location.

[0030] As used herein, the term "memory device" means and includes (by way of non-limiting example) semiconductors and other microelectronic devices exhibiting memory functionality but excluding other functionalities, unless the context of the term clearly indicates otherwise. In other words, by way of example only, the term "memory device" means and includes not only conventional memory in the form of DRAM, NAND, etc., but also means and includes (by way of example only) application-specific integrated circuits (ASICs) (e.g., system-on-a-chip (SoC)), microelectronic devices combining logic and memory, or graphics processing units (GPUs) incorporating memory.

[0031] As used herein, unless otherwise expressly stated, the terms “metal” and “metallic material” mean and include elemental metals, metal alloys, and combinations of different and adjacent metals or metal alloys (e.g., layers).

[0032] The description herein provides specific details, such as size, shape, material composition, location, and orientation, to provide a detailed description of embodiments of the present disclosure. However, those skilled in the art will understand and appreciate that these specific details may not necessarily be used in practicing embodiments of the present disclosure, as embodiments of the present disclosure can be practiced in conjunction with conventional process actions and equipment used in the industry, with appropriate modifications based on the present disclosure. Furthermore, the description provided below does not form a complete process flow. Only those process actions and structures necessary for understanding embodiments of the present disclosure are described in detail below.

[0033] The drawings presented herein are for illustrative purposes only and do not represent actual drawings of any particular material, component, structure, device, or system. Variations in the shapes depicted in the drawings are expected due to, for example, manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes or areas illustrated, but rather include shape deviations due to, for example, manufacturing processes. For instance, areas illustrated or described as box-shaped may have rough and / or non-linear characteristics, and areas illustrated or described as circular may contain some rough and / or linear characteristics. Furthermore, acute angles between illustrated surfaces may be rounded, and vice versa. Therefore, the areas illustrated in the figures are schematic, and their shapes are not intended to illustrate the precise shape of the areas and do not limit the scope of the claims of this invention. The drawings are not necessarily drawn to scale.

[0034] Embodiments may be described based on processes described as flowcharts, flow diagrams, or block diagrams. While flowcharts may describe actions as a sequence of processes, many of these actions may be performed in another sequence, in parallel, or substantially simultaneously. Furthermore, the order of actions may be rearranged. A process may correspond to a method, thread, function, program, subroutine, subroutine, other structure, or a combination thereof. Moreover, the methods disclosed herein may be implemented in hardware, software, or both. If implemented in software, the functionality may be stored or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable media includes both computer storage media and communication media, encompassing any media that facilitates the transfer of a computer program from one place to another. In the description, and for convenience, the same or similar reference numerals may be used to identify common features and elements between the various diagrams.

[0035] In the background, microelectronic devices (e.g., semiconductor dies) may experience breakage when the pick-up arm of a pick-up and placement device contacts the die picked up from a dielectric film (e.g., a dicing tape) supported by a film frame, as an ejector beneath the film carrying the die moves the die upward to meet the pick-up arm. Additionally, contact on the die due to the movement of the pick-up arm toward the bonding tip can lead to breakage when the picked-up die is transferred from the pick-up arm to a receiving assembly (e.g., the bonding tip of a bonding head in a thermosetting bonding apparatus). In either case, the impact can be caused by incorrect overtravel of the pick-up arm toward the die or bonding tip, or angular misalignment (e.g., non-coplanarity, non-parallel orientation) of the pick-up surface of the pick-up arm relative to the die surface or bonding tip surface, causing the two surfaces to be non-parallel as the pick-up arm approaches the die or bonding tip. If overtravel occurs, the magnitude of the contact between the pick-up surface and the die surface or the bonding tip surface can trigger breakage. If non-coplanarity occurs, point contact between the edge of the pickup arm and the die surface, or between the die surface and the mating tip surface, can increase the force per unit area on the die by several orders of magnitude, potentially leading to breakage. Additionally, if any of the pickup surface, die surface, and / or mating tip surface has protruding defects (e.g., microbumps, microridges), contact between the defect and the die surface, pickup surface, or mating tip surface can increase the force per unit area on the die at the defect location by several orders of magnitude, potentially leading to breakage. Furthermore, contamination (e.g., particles) can inadvertently enter between the die surface and the pickup surface, or between the die surface and the mating tip surface, during the pickup and placement process; contamination can increase the force per unit area on the die at the contaminated location by several orders of magnitude and can also lead to breakage.

[0036] To better visualize the issues mentioned above, Figure 1 An example of a pick-and-place device 100 combined with an example of a thermoforming device 200 is illustrated. Additionally, Figure 2 These are micrographs showing multiple stacked semiconductor dies with cracks, and Figure 3 It is a magnified micrograph showing a crack infiltrated by the underfill material in the joint line. Also refer to... Figures 1 to 3 The image depicts the removal of a microelectronic device (e.g., a semiconductor die) S from a diced semiconductor wafer W on a dicing tape 102 (where the active surface A of the semiconductor die faces upward and conductive elements (not shown) protrude from the active surface A in a non-conductive film (NCF)). This process can occur... Figure 2 and 3The crack is depicted in the image. Next, the bonding tip 204 of the bonding head 202 of the thermocompression bonding apparatus 200 is transferred to the bonding head 202 for reorientation and stacking on a substrate (e.g., a target semiconductor wafer containing a die position array) in a "flip-chip" manner, wherein the active surface A of the semiconductor die S faces downward toward the substrate. The pick-and-place apparatus 100 includes a pick-up arm 104 movable in the X, Y, and Z directions and rotated about the lateral axis LA and about the longitudinal axis LO by drive motors 120X, 120Y, 120Z equipped with linear encoders and drive motors 120LA and 120LO equipped with rotary encoders, controlled by a programmable controller 122 including one or more microprocessors 124. The microprocessors 124 communicate with a memory 126 storing operating programs and with an optical sensor system 128 in a closed loop to align the pick-up arm 104 with the semiconductor die S to be removed by the pick-up arm 104 from the dicing tape 102 and transferred to the bonding tip surface 206. The suppliers of this equipment include (but are not limited to) ASM International of Almere, The Netherlands and Shinkawa Ltd. of Tokyo, Japan.

[0037] like Figure 1The diagram illustrates how a semiconductor die S, diced from a semiconductor wafer W, is supported and adhered to a dicing tape 102. Typically, the dicing tape 102 (which may be a polymer film coated with UV-release adhesive and externally supported by a so-called film frame 103) supports the semiconductor wafer W during a so-called "single-cut" operation, where individual semiconductor die positions on the wafer W are separated by a diamond-coated dicing saw. Subsequently, the dicing tape 102 is extended to separate the single-cut semiconductor die S for removal from the dicing tape 102. At this point, the semiconductor die S is ready to be picked up from the dicing tape 102, and the pickup arm 104 of the pickup and placement device 100 is suspended above the position of the semiconductor die S and optically aligned with the position of the semiconductor die S using an optical sensor system 128. The pickup arm 104 is then rapidly moved to a position vertically above and within the transverse X and Y planes aligned with the semiconductor die S having a pickup surface 106 parallel to the active surface A. Once aligned with the semiconductor die S, the pickup arm 104 is rapidly lowered vertically until a predetermined pre-programmed distance, for example, about 100 μm and up to about 500 μm, is reached between the pickup surface 106 of the pickup arm 104 and the active surface A of the semiconductor die S. Thereafter, the movement of the pickup arm 104 is significantly slowed to achieve “soft contact” with the NCF on the active surface A. Between the time the pickup arm 104 slows down and the time it contacts the active surface A, the ejector 108 moves upward against the dicing tape 102 in sync with the pickup arm 104 (as shown by vertical arrow E) and presents the semiconductor die S to the pickup surface 106. The pickup arm 104 and the pickup surface 106 are equipped with a vacuum port 110, which is selectively connected to a vacuum source 110VS and actuated to pull the semiconductor die S away from the dicing tape 102. Ideally, the pickup arm 104 and the ejector 108 move in unison to minimize (e.g., substantially eliminate) the contact force between the pickup surface 106 and the ejector 108, while simultaneously substantially preventing any gap between the pickup arm 104 and the NCF above the active surface A. For example, ideally, due to synchronization, the contact force of the pickup arm 104 is minimized to a maximum of about 50 to 150 grams, and is expected to be much smaller.

[0038] However, as discussed herein, due to the pickup arm 104 and / or ejector 108 deviating from the calibrated or mismatched encoder value for control movement, the pickup arm 104 may overtravel and the pickup surface 106 may therefore excessively press against the semiconductor die S, thereby inducing stress microcracks or even cracks by at least one of the applied impact and excessive force, for example... Figure 2 and 3 The crack is depicted in the image. Regardless of whether overtravel occurs, the semiconductor die S is then removed for further transport by the pick-up arm 104 and transferred to the bonding tip surface 206 of the bonding tip 204 for alignment on a substrate or another semiconductor die S, as discussed below.

[0039] Similarly, if the pickup surface 106 is not parallel to the active surface A or is misaligned with the semiconductor die S during rotation, edge contact between the pickup surface 106 and the active surface A may occur. A non-coplanarity of the pickup surface 106 relative to the active surface A, as small as approximately 20 μm (referred to herein as "non-coplanarity"), can lead to damage to the semiconductor die S. For the foregoing, the term "non-coplanarity" can indicate that two object surfaces are not parallel to each other and / or that one surface is misaligned with the other during rotation.

[0040] Still referencing Figure 1 This illustrates, in schematic form, an example transfer operation from the pickup arm 104 to the engagement tip 204 of the engagement head 202 of the thermoforming device 200. Figure 1 In this process, a pickup arm 104, carrying a semiconductor die S via an active surface A, is lifted as needed, moved in the X, Y, and Z directions, and rotated about the lateral axis LA and the longitudinal axis LO to present the back surface B of the semiconductor die S to the bonding tip surface 206 of the bonding tip 204 of the bonding head 202 of the thermocompression bonding apparatus 200. As in a pickup operation, the pickup arm 104 is rapidly moved until a pre-programmed gap of approximately 100 μm is reached between the back surface B and the bonding tip surface 206. Thereafter, the pickup arm 104 moves relatively slowly toward the bonding tip 204 without contacting it, the bonding tip 204 being at a high temperature provided by a resistance heater 208. The remaining gap essentially isolates the semiconductor die S from the heat of the bonding tip 204, which would otherwise cause the NCF to become sticky and adhere to the pickup surface 106 or begin to cure prematurely before being stacked on a target substrate or another semiconductor die, thus compromising bonding integrity.

[0041] Furthermore, even if the equipment is properly calibrated, variations in the coplanarity of the pickup surface 106 and the bonding tip surface 206 with respect to the vertical distance D can cause the edge of the back surface B of the semiconductor die S to make unintentional, unspaced contact with the bonding tip surface 206. When the back surface B moves to a relatively close proximity (e.g., less than about 150 μm to about 200 μm) to the bonding tip surface 206, the vacuum port 210 in the bonding tip 204 is actuated and the vacuum port 110 in the pickup surface 106 is de-actuated to transfer the semiconductor die S to the bonding tip surface 206 in a contactless manner through its back surface B in response to a pressure difference. In some examples, the vacuum port 110 in the pickup surface 106 is inverted to generate a relatively small positive pressure according to the cleaning sequence, and the semiconductor die S “expands” against the bonding tip surface 206 for contactless transfer. Ideally, the pickup surface 106 is properly calibrated to be parallel to the bonding tip surface 206 at a desired distance when manipulated close to the bonding head 202, such that the transfer of the semiconductor die S is completed without any contact force distribution on the back surface B of the semiconductor die S. However, during repeated use, the movement of the pickup arm 104, the bonding tip 204, or both may deviate from the calibration. Consequently, the pickup surface 106, and therefore the back surface B of the semiconductor die S, presents an acute angle relative to the bonding tip surface 206, resulting in edge contact between the back surface B and the bonding tip surface 206, causing edge breakage on the back surface B of the semiconductor die S, for example... Figure 2 and 3 The cracks depicted in the image.

[0042] While die microcracks and cracks are generally an issue, as noted above, the continued reduction in die and bonding wire thickness exacerbates the problem. Notable examples of die cracks leading to yield reductions due to handling issues become apparent when die thickness reaches approximately 60 μm to 65 μm, increase further in number and severity at approximately 50 μm, and are expected to worsen further as die thickness reaches approximately 30 μm or less in response to industry demands for stacking increasingly more microelectronic devices at given form factor heights.

[0043] Still largely referencing Figures 1 to 3To further aid the reader's understanding of the embodiments of this disclosure, a dielectric film in the form of an NCF is actually adhered to and bonded to the active surface of a bulk semiconductor substrate that is generally in the form of a wafer (e.g., a silicon wafer on which an integrated circuit system has been fabricated). The wafer is then individually diced along a so-called "street" between adjacent semiconductor die locations on the wafer, for example by a diamond-coated dicing blade, while supported on a dicing strip supported on a film frame, to provide individual semiconductor dies, each having an NCF on its active surface. Even though the NCF may be laminated to a protective film during transport and handling, once the NCF is laminated to the active surface of the wafer, the protective film is peeled off before the individual dicing of the wafer into individual semiconductor dies occurs. This exposes the upper, currently uncovered, exposed surface of the NCF to contamination during dicing and during subsequent die handling of adjacent dies from which residual contaminants from the diced NCF can fall.

[0044] The particles generated during the single-cutting process can be inorganic (e.g., silicon fragments) or organic (e.g., NCF residue, dicing tape residue, or microparticles from other sources within a cleanroom environment). Silicon particles can, for example, cause the die to break when the particle size exceeds the bonding wire thickness, while organic particles, when located on conductive elements such as solder-covered conductive pillars or solder bumps with under-bump metallization (UBM), can cause solder to become unwetted, thereby impairing the electrical connectivity between stacked dies.

[0045] It has been established that particulate contaminants on exposed NCF surfaces significantly reduce wafer yield (especially during blade dicing processes, such as single dicing), resulting in a large amount of particulate debris. Significantly, wafer yield due to NCF contamination progressively worsens during the initial wafer removal process, after wafer (e.g., post-dicing), after wafer lamination onto the dicing tape supported on the membrane frame, and during post-dicing. If a 60 μm contaminant particle size is used as a baseline for determining damaged wafers (e.g., wafer defect rate), the yield gradually decreases from almost 100% after removal to approximately 90% after dicing, with approximately half of the defective wafers damaged by silicon (e.g., solid) particles and approximately half by organic (e.g., transparent) particles. However, if a 20 μm contaminant particle size is used as a baseline, the yield drops sharply from over 95% after removal to below 75% after dicing, again with approximately half of the defective wafers damaged by silicon (e.g., solid) particles and approximately half by organic (e.g., transparent) particles. Since NCF thicknesses of approximately 15 μm are common and those of approximately 10 μm are expected to be used, it is easy to understand that even tiny contaminant particles of approximately 15 μm or smaller can significantly increase die defect rates. Furthermore, as the industry moves towards so-called "zero bond thicknesses" of less than approximately 5 μm, even with tiny contaminant particles present on the surface of the microelectronic device (e.g., the active surface of a semiconductor die), using plasma-treated silicon oxide or organic materials to bond adjacent microelectronic devices via aligned Cu-to-Cu conductive element electrical connections that are stacked on a very thin (e.g., approximately 30 μm) basis will significantly reduce the yield of these fragile devices.

[0046] The importance of contaminants to yield loss during pick-up and placement operations can be characterized by promoting stress concentration on the surface of the semiconductor die by essentially limiting contact between one or more contaminant particles—for example, the surface of the pick-up arm and the thickness of the NCF and the height (e.g., diameter) of the conductive element (e.g., a copper pillar protruding from the active surface and within the NCF on the active surface of the die)—to a size (e.g., diameter). Therefore, instead of distributing the pick-up arm contact force across the entire NCF and conductive element and reducing the force per unit area on the active surface of the die, the entire force can be concentrated only at a few discrete points on the active surface where the contaminant particles reside and protrude above the NCF.

[0047] For reference Figures 4A to 4F Depicting in a schematic form what could lead to breakage (e.g.) Figure 2 and 3 The standard picking operation (as depicted in the image). For example, Figures 4A to 4F The image depicts a conventional pick-up operation using a pick-up arm and ejector of a pick-up and placement device 100 to remove a semiconductor die S with an active surface A configured with conductive elements (e.g., metal pillars) from a dicing tape for stacking and thermoforming.

[0048] refer to Figure 4A A microelectronic device in the form of a semiconductor die S is supported and adhered to a dicing tape 102 of a pick-and-place device 100. Typically, the dicing tape 102 supports the monocut semiconductor die S to be removed from the dicing tape 102. A pick-up arm 104 of the pick-and-place device 100 is suspended above and optically aligned with the semiconductor die S. As previously noted, the pick-up arm 104 is movable in the X, Y, and Z directions and can also rotate about the lateral axis LA and longitudinal axis LO under the control of a programmable controller via a drive motor equipped with an encoder.

[0049] Once aligned on the semiconductor die S, the pickup arm 104, as... Figure 4B The image shows a rapid vertical descent until a predetermined pre-programmed distance (e.g., 100 μm as depicted) is reached between the pickup surface 106 of the pickup arm 104 and the active surface A of the semiconductor die S. Thereafter, the travel of the pickup arm 104 slows significantly to achieve "soft contact" by making contact with the NCF on the active surface A. Between the time the pickup arm 104 slows down and the time it contacts the active surface A, the ejector 108 moves upward against the dicing tape 102 synchronously with the pickup arm 104 (as shown by vertical arrow E) and presents the semiconductor die S to the pickup surface 106 via a vacuum port 110 actuated to pull the semiconductor die S away from the dicing tape 102. Ideally, due to synchronization, the contact force of the pickup arm 104 is minimized to a maximum of about 50 to 150 grams, and is expected to be much smaller. However, due to the pickup arm 104 and / or ejector 108 deviating from the calibrated or mismatched encoder values ​​for control movement, such as Figure 4C As shown, the pickup arm 104 may overtravel and the pickup surface 106 may therefore excessively press on the semiconductor die S, thereby inducing stress microcracks and cracks by at least one of the applied impact and excessive force. The damaged semiconductor die S is then removed by the pickup arm 104 from the dicing tape 102 for further handling, such as... Figure 4F It is displayed in the middle.

[0050] Similarly, if the pickup surface 106 is not parallel to the active surface A or is misaligned with the semiconductor die S during rotation, then contact will occur between the pickup surface 106 and the edge of the active surface A, such as... Figure 4D As shown in the diagram, the small non-coplanarity of the pickup surface 106 relative to the active surface A, as small as approximately 20 μm, can cause damage to the semiconductor die S.

[0051] Additionally, contaminants in the form of inorganic or organic particles P (e.g., any of the aforementioned contaminants) from the single-cutting process on the active surface A, or NCF residues picked up on the pickup surface 106 by the previous device, can cause damaging forces to concentrate on the active surface A of the semiconductor die S, such as... Figure 4E As shown in the diagram. Similarly, the presence of defects D in the semiconductor die S exposed at the active surface A and / or on the pick-up surface can cause damaging forces to concentrate on the active surface A of the semiconductor die S, such as... Figure 4E As shown in the image. Unfortunately, cracks and microcracks C are not easily detected during semiconductor die handling, and their presence may often be imperceptible before assembly with other semiconductor dies. This assembly, and the subsequent application of normal forces by the joint during the thermocompression bonding of the die stack, can exacerbate the development of microcracks into fractured dies, such as... Figure 2 and 3 It is displayed in the middle.

[0052] For reference Figure 5A and 5B Depicting in a schematic form what could lead to breakage (e.g.) Figure 2 and 3 The conventional transfer operation (described in the text) involves the rupture. For example, Figure 5A and 5B The illustration schematically depicts the routine pick-up and transfer operations from the pick-up arm 104 to the engagement tip 204 of the engagement head 202 of the thermoforming device 200. For example... Figure 5A As shown, a pickup arm 104 carrying a semiconductor die S via an active surface A moves as needed in the X, Y, and Z directions and rotates about the lateral and longitudinal axes to present a back surface B to the bonding tip surface 206 of the bonding tip 204 of the bonding head 202 of the thermocompression bonding apparatus 200. The pickup arm 104 moves rapidly until a pre-programmed distance is reached, after which it moves more slowly toward the bonding tip 204 without contacting it. When the back surface B comes into close proximity to the bonding tip surface 206, the vacuum port 210 of the bonding tip 204 is actuated and the vacuum port 110 in the pickup arm 104 is de-actuated, transferring the semiconductor die S to the bonding tip 204 in a contactless manner in response to a pressure difference. Therefore, the semiconductor die S is thermally isolated from the bonding tip 204 for as long as possible.

[0053] As previously noted, in some examples, the vacuum to the vacuum port 110 in the bonding tip 204 and at the pick-up surface 106 can be reversed to provide a small positive pressure, and the semiconductor die S "expands" against the bonding tip surface 206 for contactless transfer. Figure 5AAs shown, in an ideal scenario, the pick-up surface 106 is properly calibrated to be parallel to the bonding tip surface 206 when manipulated close to the bonding head 202, such that the transfer of the semiconductor die S is completed even in the worst-case scenario where there is no contact force distribution on the back surface B of the semiconductor die S. However, as Figure 5B As described above, during repeated use, the movement of the pickup arm 104 deviates from calibration. Consequently, the pickup surface 106, and therefore the back surface of the semiconductor die S, presents at an acute angle (e.g., "tilted") relative to the bonding tip surface 206, resulting in edge contact EC between the back surface B and the bonding tip surface 206, leading to edge breakage on the back surface B. The edge contact EC can be along a line when the pickup surface 106 is rotated to align with the bonding tip surface 206, or it can be a point contact involving the angle of the back surface B of the semiconductor die S when it is rotated out of alignment and tilted in a plane perpendicular to the longitudinal axis LO. It has been found that a small angular displacement D of approximately 80 μm parallel between the back surface B and the bonding tip surface 206 can cause micro-cracks or fractures in the semiconductor die S from this edge contact. Similarly, as discussed above, contaminants in the form of inorganic or organic particles from the single-cutting process on the active surface A, defects in the semiconductor die S present on the active surface A and / or defects in the surface of the bonding tip surface 206, or the presence of NCF residues picked up on the pick-up surface 106 by the previous device, can cause damaging forces to concentrate on the active surface A and on the edge contacts of the back surface B due to its non-parallel orientation.

[0054] The embodiments of this disclosure solve the above-mentioned problems. For example, Figure 6A and 6B The illustration depicts an inspection system 603 comprising a connector assembly 600 and a pickup assembly 601 according to an embodiment of the present disclosure. The connector assembly 600 may include a connector 602, a connector tip 604 defining a connector tip surface 606, and a first three-dimensional (3D) sensor 608. The pickup assembly 601 may include a pickup arm 612 defining a pickup surface 613, a pickup arm drive 614, and a second 3D sensor 616.

[0055] The connector assembly 600 may include any of the aforementioned connectors and engagement tips. In some embodiments, a first 3D sensor 608 may be mounted to or at least proximate to (e.g., adjacent to) the connector 602. Additionally, the first 3D sensor 608 is operatively coupled to the controller 610. The pickup assembly 601 may include any of the aforementioned pickup arms. Furthermore, a second 3D sensor 616 may be mounted to or at least proximate to (e.g., adjacent to) the pickup arm drive 614, and the second 3D sensor 616 is operatively coupled to the controller 610.

[0056] In some embodiments, when the inspection system 603 is in the first position, such as Figure 6A As depicted, the first 3D sensor 608 can be oriented such that its field of view 620 will include the pickup surface 613 of the pickup arm 612 and / or the back surface of the semiconductor die during a transfer process (e.g., any of the transfer processes described above). Furthermore, when the inspection system 603 is in the second position, such as... Figure 6B As described, the second 3D sensor 616 can be oriented such that its field of view 622 will include the bonding tip surface 606. In one or more embodiments, as described in more detail below, the controller 610 can receive image data from the first and second 3D sensors 608, 616 to identify defects, particles, and / or contamination on the surface and to identify the non-coplanarity of the pickup arm 612 relative to the bonding tip 604. Therefore, the controller 610 can use the image data to control the orientation of the pickup arm 612 and the semiconductor die (e.g., semiconductor die S) and / or the bonding tip 604 to ensure proper orientation of the semiconductor die during the transfer process (e.g., to avoid the aforementioned misalignment and edge contact).

[0057] In one or more embodiments, the first 3D sensor 608 may be offset from the engagement tip surface 606 by a distance D1 ranging from about 0.00 mm to about 5.0 mm in a direction orthogonal to the engagement tip surface 606. For example, distance D1 may be about 0.5 mm. In some embodiments, D1 may be selected to ensure that the field of view 620 of the first 3D sensor 608 maintains a view of the pickup surface 613 of the pickup arm 612 and / or the back side of the semiconductor die during the transfer process. Given the foregoing, the position of the engagement tip surface 606 relative to the first 3D sensor 608 is known, and vice versa. The second 3D sensor 616 may be offset from the pickup surface 613 by a distance D2 ranging from about 0.00 mm to about 5.0 mm in a direction orthogonal to the pickup surface 613. For example, distance D2 may be about 0.5 mm. In some embodiments, D2 may be selected to ensure that the field of view 622 of the second 3D sensor 616 maintains a view of the engagement tip surface 606 of the engagement tip 604. Additionally, distances D1 and D2 can be selected to ensure that the first and second 3D sensors 608, 616 do not interfere with each other during the pickup and transfer process (e.g., avoid contact with the semiconductor die and the risk of damaging the semiconductor die). Given the foregoing, the position of the pickup surface 613 relative to the second 3D sensor 616 is known, and vice versa. In one or more embodiments, distances D1 and D2 may be adjusted depending on the process performed by the connector assembly 600 and the pickup assembly 601 and / or the thickness of the semiconductor die when the connector assembly 600 and the pickup assembly 601 are manipulated.

[0058] In some embodiments, one or more of the first 3D sensor 608 and the second 3D sensor 616 may be configured to detect objects and surface topology in three dimensions. For example, one or more of the first 3D sensor 608 and the second 3D sensor 616 may include a laser system. In one or more embodiments, the laser system may include a high-speed, high-resolution laser sensor. For example, the laser system may scan, measure, and be controlled at speeds of about 5 kHz, 7 kHz, or 10 kHz. Additionally, the laser system may include a three-dimensional profile sensor. Furthermore, the laser system may provide a resolution in the range of about 0.008 to about 0.054 mm. As a non-limiting example, the laser system may include components manufactured using LMI technology. 2500 series lasers. As an additional non-limiting example, the laser system may include a Keyence laser profilometer manufactured by Keyence Corporation of America and / or a CheckBox laser scanner manufactured by Automated Precision, Inc. In some embodiments, both the first 3D sensor 608 and the second 3D sensor 616 may include a laser system. In one or more embodiments, one or more of the first 3D sensor 608 and the second 3D sensor 616 may include a camera, an infrared sensor, a stereo camera, or other 3D sensors. In some embodiments, the first 3D sensor 608 may be different from the second 3D sensor 616.

[0059] As noted above, in some embodiments, a first 3D sensor 608 may be mounted to a connector 602, and a second 3D sensor 616 may be mounted to a pickup arm drive 614. Therefore, movement of the connector 602 and the engagement tip 604 can cause movement of the first 3D sensor 608, and movement of the pickup arm drive 614 and the pickup arm 612 can cause movement of the second 3D sensor 616. Thus, movement of the second 3D sensor 616 can track (e.g., mate) with movement of the pickup arm 612. Similarly, movement of the first 3D sensor 608 can track (e.g., mate) with any movement of the connector 602.

[0060] In some embodiments, the controller 610 is operatively coupled to a pickup and placement device (e.g., pickup and placement device 100) that includes a pickup assembly 601. Figure 1 )) and a thermocompression bonding apparatus including a joint assembly 600 (e.g., thermocompression bonding apparatus 200 ( Figure 2 Therefore, in addition to controlling the operation of the first and second 3D sensors 608 and 616, the controller 610 also controls the operation of the pickup assembly 601 and the connector assembly 600.

[0061] Controller 610 may include processor 624 coupled to memory 626 and input / output component 628. Processor 624 may include a microprocessor, field-programmable gate array, and / or other suitable logic device. Memory 626 may include volatile and / or non-volatile media (e.g., ROM, RAM, disk storage media, optical storage media, flash memory devices, and / or other suitable storage media) and / or other types of computer-readable storage media configured to store data. Memory 626 may store algorithms for operating the pickup arm and the first and second 3D sensors 608, 616, edge detection, image processing, image segmentation, and feature extraction for execution by processor 624. In some embodiments, processor 624 may be configured to transmit data to a computing device, such as a server or personal computer, operatively coupled (e.g., via the Internet) to controller 610. Input / output component 628 may include a display, touchscreen, keyboard, mouse, and / or other suitable type of input / output device configured to accept input from an operator and provide output to an operator.

[0062] Figure 7 The illustration depicts a pickup assembly 601 according to an embodiment of the present disclosure, together with a semiconductor die 702 on a dicing tape 704 and an ejector 706. The dicing tape 704 and ejector 706 may include any of the aforementioned dicing tape and ejector. As noted above, the pickup assembly 601 may include a pickup arm 612 defining a pickup surface 613, a pickup arm drive 614, and a second 3D sensor 616, as described above regarding... Figure 6A and 6B describe.

[0063] When picking up assembly 601 Figure 7 When the orientation is as described (e.g., immediately preceding the pickup process (e.g., a pickup process similar to any of the processes described above), the field of view 622 of the second 3D sensor 616 may include the active surface 708 of the semiconductor die 702. Therefore, as described in more detail below, the controller 610 may receive image data from the second 3D sensor 616 regarding the active surface 708 of the semiconductor die 702 and may identify defects and / or contamination on the active surface 708 and may identify the tilt of the pickup arm 612 relative to the semiconductor die 702 and / or the active surface 708 of the semiconductor die 702.

[0064] To facilitate understanding of embodiments of this disclosure, an example verification process is described herein. Figure 8A and 8B A flowchart illustrating a method 800 for inspecting the pickup surface (e.g., pickup surface 613) of a pickup arm (e.g., pickup arm 612) and the engagement tip surface (e.g., engagement tip surface 606) of an engagement tip (e.g., engagement tip 604).

[0065] Method 800 may include orienting the pickup arm to a position where the pickup arm is oriented within the field of view of a first 3D sensor (e.g., first 3D sensor 608), such as... Figure 8A The action 802 is illustrated. For example, the orientation pickup arm (action 802) may include optically aligning the pickup arm with a first 3D sensor such that the pickup surface is within the field of view of the first 3D sensor. In some embodiments, the controller may cause the pickup arm to be oriented within the field of view of the first 3D sensor by moving the pickup arm in the X, Y, and Z directions and / or rotating the pickup arm about a lateral axis (e.g., lateral axis LA) and about a longitudinal axis (e.g., longitudinal axis LO). In one or more embodiments, the orientation pickup arm (action 802) may include oriented the pickup arm at least substantially directly below the first 3D sensor (e.g., ...). Figure 6A (The location depicted in the text). In other embodiments, the orientation pick-up arm (action 802) may include orienting the pick-up arm to a typical location for performing semiconductor die transfer. For example, the orientation pick-up arm (action 802) may include orienting the pick-up arm to the location described above. Figure 5A Anything in the described location.

[0066] In response to orienting the pickup arm within the field of view of the first 3D sensor, method 800 may include capturing and receiving image data from the first 3D sensor, such as... Figure 8A The action is illustrated in action 804. For example, a controller (e.g., controller 610) operably coupled to the pickup arm and the first 3D sensor can cause the first 3D sensor to capture image data and can receive image data from the first 3D sensor, such as... Figure 8A The action 804 is illustrated. The image data may include image data (e.g., images, light data, laser data, or other image data) of the pickup surface of the pickup arm. As noted above, in some embodiments, the first 3D sensor may include a laser system, and the image data may include three-dimensional contour data. In some embodiments, the image data may include one or more of still image data (e.g., one or more discrete image data packets (e.g., one or more still images)) or video data (e.g., at least substantially continuous image data).

[0067] After receiving the image data, method 800 includes analyzing the image data, such as... Figure 8A Action 806 is shown. For example, the controller can analyze image data. In some embodiments, analyzing image data may include identifying objects represented in the image data, such as... Figure 8AAs shown in action 808. In some embodiments, analyzing image data may include applying one or more image segmentation techniques to the image data to identify objects and surface topologies within the image data. For example, analyzing image data may include applying one or more image segmentation techniques to the image data to identify one or more of the pickup arm, the pickup surface of the pickup arm, and any other objects and surface topologies (e.g., particles, contaminants, defects) on or at the pickup surface of the pickup arm. In one or more embodiments, segmenting image data may include locating objects and boundaries (e.g., lines, curves) within the image represented in the image data and associating said objects with the pickup arm, the pickup surface of the pickup arm, and any other objects and surface topologies (e.g., particles, contaminants, defects) on or at the pickup surface of the pickup arm.

[0068] The result of image segmentation may include a set of segments that collectively cover the entire image within the image data and / or a set of shapes extracted from the image (e.g., edge detection). Segmenting image data may include applying any conventional image segmentation process to the image data. In another embodiment, analyzing the image data may also, or alternatively, include using one or more feature extraction techniques or grayscale analysis techniques to detect and isolate various desired portions or shapes of the image data (e.g., features such as a pickup arm, the pickup surface of the pickup arm, and any object (e.g., particles, contaminants, defects) on or at the pickup surface of the pickup arm)). In some embodiments, identifying objects represented within the image data may include determining the size of the object (e.g., particles, contaminants, defects).

[0069] Additionally, the analysis of image data may optionally further include determining the position and orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip, such as... Figure 8A This is illustrated in action 810. For example, through the analysis described above regarding actions 806 and 808, the controller can identify the pickup surface of the pickup arm, and based on the known position of the first 3D sensor relative to the bonding surface of the bonding tip, the controller can determine the orientation of the pickup surface relative to the bonding surface. For example, the controller can determine whether the angle defined between the pickup surface and the bonding tip surface is within an acceptable range (e.g., less than 80 μm) to avoid damage to the semiconductor die during subsequent transfer processes. In other words, the controller can identify the potential non-coplanarity between the pickup surface and the bonding tip surface and the degree (e.g., severity) of the non-coplanarity.

[0070] Based on the above... Figure 8A Actions 806 and 808 describe the analysis and identification of objects and / or unacceptable surface topologies. Method 800 may optionally include initiating one or more remedial measures, such as... Figure 8AAction 812 illustrates this. For example, in response to the identification (e.g., detection) of one or more objects and surface topologies (e.g., defects, contamination, particles, damage), the controller can implement remedial measures.

[0071] In some embodiments, initiating one or more remedial measures may include initiating a cleaning process to clean the pickup surface of the pickup arm, such as... Figure 8A Action 814 illustrates this. For example, in response to identifying particles or contamination on the active surface of a semiconductor die, the controller may initiate a cleaning process to clean the pickup surface of the pickup arm. In some embodiments, the cleaning process may include cleaning the pickup arm with a cleaning fluid. For example, the cleaning process may include immersing the pickup arm in a cleaning solvent (e.g., alcohol) at a cleaning station. In an additional embodiment, the cleaning process may include cleaning the pickup surface with air. For example, the cleaning process may include blowing air (e.g., a blower) across the pickup surface of the pickup arm. In another embodiment, the cleaning process may include scrubbing the pickup surface with a brush. In yet another embodiment, the cleaning process may include vacuum cleaning the pickup surface.

[0072] In some embodiments, initiating one or more remedial measures may include replacing the pickup arm, such as Figure 8A Action 816 illustrates this. For example, in response to identifying a defect on the pickup surface of the pickup arm, the controller can initiate a replacement process to replace the pickup arm. For instance, the controller can trigger an alarm indicating that the pickup arm is defective and needs to be replaced.

[0073] In some embodiments, initiating one or more remedial measures may include triggering an alarm, such as Figure 8A Action 818 illustrates this. For example, in response to the identification of particles, contamination, defects, and / or damage, the controller may trigger an alarm requesting operator attention and inspection. In some embodiments, which remedial actions are initiated by the inspection system may be based at least in part on the determined size of the contamination, defect, and / or particles. For example, some sizes of contamination, defects, and / or particles may only require a warning alarm, while others may require stopping the operation of picking up and placing equipment and require operator attention.

[0074] As noted above, method 800 may include determining the position and orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip. In response to identifying non-coplanarity between the pickup surface and the engagement tip surface (e.g., an indication that the angle between the pickup surface and the engagement tip surface is outside an acceptable range or that the pickup arm has deviated from calibration), method 800 may include recalibrating the pickup arm and / or the engagement tip, such as... Figure 8AThe action 820 is illustrated. For example, in response to identifying non-coplanarity between the pickup surface and the engagement tip surface, the controller may initiate recalibration of the pickup arm and / or engagement tip. In some embodiments, the pickup arm and / or engagement tip may be recalibrated by any conventional method. In one or more embodiments, based on a determined position of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip, the controller may cause the pickup arm and / or engagement tip to move in the X, Y, and Z directions. Additionally, the controller may cause the pickup arm to rotate about a transverse axis (e.g., transverse axis LA) and about a longitudinal axis (e.g., longitudinal axis LO) to at least substantially achieve coplanarity between the pickup surface and the engagement tip surface.

[0075] Method 800 may further include orienting the pickup arm to a position where the engagement tip surface is within the field of view of a second 3D sensor (e.g., second 3D sensor 616) coupled to the pickup arm, such as Figure 8A The action 822 is illustrated. For example, the orientation pickup arm (action 822) may include optically aligning the surface of the engagement tip with the second 3D sensor such that the surface of the engagement tip is within the field of view of the second 3D sensor. In some embodiments, the controller may orient the pickup arm and thus orient the second 3D sensor by moving the pickup arm in the X, Y, and Z directions and / or rotating the pickup arm about a lateral axis and about a longitudinal axis. In one or more embodiments, the orientation pickup arm (action 822) may include orienting the pickup arm such that the second 3D sensor is at least substantially directly below the surface of the engagement tip (e.g., Figure 6B (The location depicted in the text). In other embodiments, the orientation pick-up arm (action 822) may include orienting the pick-up arm to a typical location for performing semiconductor die transfer. For example, the orientation pick-up arm (action 822) may include orienting the pick-up arm to the location described above. Figure 5A Anything in the described location.

[0076] In response to orienting the pickup arm to a position where the engagement tip surface is within the field of view of the second 3D sensor, method 800 may include causing the second 3D sensor to capture image data from and receive image data, such as... Figure 8A As shown in action 824. For example, a controller operatively coupled to the pickup arm and the second 3D sensor can cause the second 3D sensor to capture image data and can receive image data from the second 3D sensor. The image data may include image data (e.g., images, light data, laser data, or other image data) of the engagement tip surface of the engagement tip. As noted above, in some embodiments, the second 3D sensor may include a laser system, and the image data may include three-dimensional contour data. In some embodiments, the image data may include one or more of still image data (e.g., one or more discrete image data packets (e.g., one or more still images)) or video data (e.g., at least substantially continuous image data).

[0077] After receiving the image data, method 800 includes analyzing the image data, such as... Figure 8A Action 826 is shown. For example, the controller can analyze image data. In some embodiments, analyzing image data may include identifying objects represented in the image data, such as... Figure 8B As shown in action 828. For example, the controller can be accessed via the above-mentioned... Figure 8A Action 806 describes any method of analyzing image data to identify one or more of the following: the joint tip, the joint tip surface of the joint tip, and any object and surface topology (e.g., particles, contaminants, defects) on or at the joint tip surface of the joint tip. In some embodiments, identifying objects represented within the image data may include determining the size of the object and surface topology (e.g., particles, contaminants, defects).

[0078] Additionally, the analysis of image data may optionally further include determining the position and orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip, such as... Figure 8B This is illustrated in action 830. For example, through any of the analyses described above with respect to actions 806, 808, 810, 826, and 828, the controller can identify the bonding tip surface of the bonding tip, and based on the known position of the second 3D sensor relative to the pickup surface of the pickup arm, the controller can determine the orientation of the pickup surface relative to the bonding surface. For example, the controller can determine whether the angle defined between the pickup surface and the bonding tip surface is within an acceptable range (e.g., less than 80 μm) to avoid damage to the semiconductor die during subsequent transfer processes. In other words, the controller can identify the non-coplanarity between the pickup surface and the bonding tip surface and the degree (e.g., severity) of the non-coplanarity.

[0079] Also refer to Figure 8A and 8B In some embodiments, actions 810 and 830 involve the controller using a combination of image data received from a first 3D sensor and image data received from a second 3D sensor to determine the position and orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip.

[0080] Based on the above... Figure 8B Actions 826 and 828 describe the analysis and identification of objects and / or unacceptable surface topologies. Method 800 may optionally include initiating one or more remedial measures, such as... Figure 8B Action 832 illustrates this. For example, in response to the identification (e.g., detection) of one or more objects (e.g., defects, contamination, particles, damage), the controller may implement remedial measures.

[0081] In some embodiments, initiating one or more remedial measures may include initiating a cleaning process to clean the mating tip surface of the joint, such as... Figure 8B Action 834 illustrates this. For example, in response to identifying particles or contamination on the surface of the engagement tip, the controller may initiate a cleaning process to clean the engagement tip surface. In an additional embodiment, the cleaning process may include cleaning the engagement tip surface with air. For example, the cleaning process may include blowing air (e.g., a blower) across the engagement tip surface. In another embodiment, the cleaning process may include scrubbing the engagement tip surface with a brush. In yet another embodiment, the cleaning process may include vacuum cleaning the engagement tip surface.

[0082] In some embodiments, initiating one or more remedial measures may include replacing the engagement tip, such as Figure 8B Action 836 illustrates this. For example, in response to identifying a defect on the surface of the mating tip, the controller can initiate a replacement process to replace the mating tip. For instance, the controller can trigger an alarm indicating that the mating tip is defective and needs to be replaced.

[0083] In some embodiments, initiating one or more remedial measures may include triggering an alarm, such as Figure 8B Action 838 illustrates this. For example, in response to the identification of particles, contamination, defects, and / or damage, the controller may trigger an alarm requesting operator attention and inspection. As noted above, in some embodiments, which remedial actions are initiated by the inspection system may be at least in part based on the determined size of the contamination, defect, and / or particles. For example, some sizes of contamination, defects, and / or particles may only require a warning alarm, while others may require stopping the operation of picking and placing equipment and require operator attention.

[0084] As noted above, method 800 may include determining the position and orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip (e.g., actions 810 and 830). In response to identifying non-coplanarity between the pickup surface of the pickup arm and the engagement tip surface (e.g., defined by an indication that the angle between the pickup surface and the engagement tip surface is outside an acceptable range or that the pickup arm has deviated from calibration), method 800 may include recalibrating the pickup arm and / or the engagement tip, such as... Figure 8BThe action 840 is illustrated. For example, in response to identifying non-coplanarity between the pickup surface of the pickup arm and the engagement tip surface, the controller may initiate recalibration of the pickup arm and / or engagement tip. In some embodiments, the pickup arm and / or engagement tip may be recalibrated by any conventional method. In one or more embodiments, based on a determined position of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip, the controller may cause one or more of the pickup arm and engagement tip to move in the X, Y, and Z directions. Additionally, the controller may cause the pickup arm to rotate about a transverse axis (e.g., transverse axis LA) and about a longitudinal axis (e.g., longitudinal axis LO) to at least substantially achieve coplanarity between the pickup surface and the engagement tip surface.

[0085] Still referencing Figure 8A and 8B In some embodiments, method 800 may include only the actions 802 to 820. In other embodiments, method 800 may include only the actions 822 to 840. For example, actions 802 to 820 may include methods separate from actions 822 to 840.

[0086] Referring also to actions 802 to 840, in some embodiments, method 800 or parts thereof (e.g., actions 802 to 820 or actions 822 to 840) may be present throughout the pick-up and transfer process (e.g., as described above regarding...). Figure 1 The method is performed intermittently during the described pick-and-transfer process. In an additional embodiment, method 800 or a portion thereof may be performed between each individual pick-and-transfer process for each individual semiconductor die of the wafer. In another embodiment, method 800 or a portion thereof may be performed at the start of the pick-and-transfer process for a given wafer.

[0087] Still referencing Figure 8A and 8B The inspection systems (e.g., inspection system 603) and methods (e.g., method 800) described herein offer advantages over conventional pick-and-transfer equipment and methods. For example, by detecting defects and / or particles on critical surfaces during pick-and-transfer, the inspection systems and methods described herein can avoid using surfaces (e.g., pick-up surfaces, bonding tip surfaces) that could cause semiconductor wafer breakage. Furthermore, by detecting defects and / or particles on critical surfaces during pick-and-transfer, the inspection systems and methods described herein can implement remedial processes to prepare the surfaces for use during pick-and-transfer, thereby reducing the risk of damaging the semiconductor wafer.

[0088] Similarly, by detecting the non-coplanarity between the pick-up surface and the bonding tip surface, the inspection system and method described herein can avoid pick-up and transfer actions when there is no coplanarity between the pick-up surface and the bonding tip surface, thereby reducing the risk of breakage due to edge contact and non-uniform force distribution. Furthermore, by detecting the non-coplanarity between the pick-up surface and the bonding tip surface, the inspection system and method described herein can correct the orientation of the pick-up arm and / or the bonding tip surface, thereby reducing the risk of damaging the semiconductor die.

[0089] By reducing the risk of damage to semiconductor dies, the inspection systems and methods described herein reduce yield loss risk and improve the reliability of pick-and-transfer equipment and processes. Furthermore, by reducing the risk of damage to semiconductor dies due to contamination, particle impact, tooling and / or product defects, and non-coplanarity, the inspection systems and methods described herein can handle and process semiconductor dies with reduced thickness compared to conventional pick-and-transfer equipment and processes. Additionally, the inspection systems and methods described herein can further enable near-zero bonding line packaging (e.g., systems and processes that further enable near-zero bonding line packaging).

[0090] Figure 9 A diagram depicts an inspection system 903 comprising a connector assembly 900 and a pickup assembly 901 according to an embodiment of the present disclosure. The connector assembly 900 may include a connector 902 and a pickup tip 904 defining a pickup tip surface 906. The pickup assembly 901 may include a pickup arm 912 defining a pickup surface 913 and a pickup arm drive 914. The connector assembly 900 may include any of the aforementioned connector and pickup tip. The pickup assembly 901 may include any of the aforementioned pickup arms.

[0091] The inspection system 903 may further include a single 3D sensor 909. In one or more embodiments, the single 3D sensor 909 may be attached (e.g., mounted) to a separate portion of the pickup and placement device. In some embodiments, the single 3D sensor 909 may be oriented such that both the pickup surface 913 and the engagement tip surface 906 are within the field of view 911 of the single 3D sensor 909. In other embodiments, the single 3D sensor 909 may be movable (e.g., rotatable in direction 915) between a first position and a second position, wherein when the single 3D sensor 909 is oriented in the first position, the pickup surface 913 is within the field of view 911 of the single 3D sensor 909, and when the single 3D sensor 909 is oriented in the second position, the engagement tip surface 906 is within the field of view 911 of the single 3D sensor 909. In another embodiment, the inspection system 903 may also include a mirror element M, which the inspection system 903 may use to change the field of view 911 of a single 3D sensor 909 to include a pickup surface 913 when in a first position and an engagement tip surface 906 when in a second position.

[0092] Additionally, a single 3D sensor 909 is operatively coupled to the controller, and the inspection system 903 can perform any analysis and implement the above-mentioned... Figure 6A , 6B And any of the remedies described in 8.

[0093] Embodiments of this disclosure further include the use of the inspection system described herein during the pick-up and transfer process. Therefore, to facilitate understanding of the embodiments described herein, an example pick-up and transfer process improved using first and second 3D sensors (e.g., first and second 3D sensors 608, 616) is described below. Figure 10A and 10B A flowchart illustrating a method 1000 for picking up and transferring semiconductor dies according to an embodiment of the present disclosure.

[0094] In some embodiments, method 1000 may include orienting a pickup arm (e.g., pickup arm 104) and a second 3D sensor (e.g., second 3D sensor 616) to a position to initiate a pickup and transfer process, such as... Figure 10A Action 1002 is shown. For example, the method may include oriented a pickup arm such that the pickup arm and the second 3D sensor are suspended above and optically aligned with the position of the semiconductor die, as shown in action 1002. Figure 10A Action 1002 is shown. For example, the pickup arm and the second 3D sensor can be accessed via the above-mentioned... Figure 1 and Figure 4A Any orientation in the manner described.

[0095] In response to the directional pickup arm and the second 3D sensor, method 1000 may include capturing image data from the second 3D sensor and receiving image data, such as... Figure 10A The action 1004 is illustrated. For example, a controller (e.g., controller 610) operatively coupled to the pickup arm and the second 3D sensor can cause the second 3D sensor to capture image data and can receive image data from the second 3D sensor. The image data may include image data (e.g., images, light data, laser data) of the active surface of a semiconductor die. The image data may further include image data of additional semiconductor dies and / or dicing tapes (e.g., dicing tape 102) of the wafer. As noted above, in some embodiments, the second 3D sensor may include a laser system, and the image data may include three-dimensional contour data. In some embodiments, the image data may include one or more of still image data (e.g., one or more discrete image data packets (e.g., one or more still images)) and video data (e.g., at least substantially continuous image data).

[0096] After receiving the image data, method 1000 includes analyzing the image data, such as... Figure 10A Action 1006 is shown. For example, the controller can analyze image data. In some embodiments, analyzing image data may include identifying objects represented in the image data, such as... Figure 10A Action 1008 is shown. The controller can be accessed via the above-mentioned... Figure 8A Any of the actions described in 806 and 808 may analyze image data to identify a semiconductor die, the active surface of the semiconductor die, and any objects and surface topology (e.g., particles, contaminants, defects) on or at the active surface of the semiconductor die. In some embodiments, identifying objects represented within the image data may include determining the size of the objects (e.g., particles, contaminants, defects). Additionally, the image data may be analyzed to determine, for example, the spacing, size, and height of conductive elements protruding from the active surface of the semiconductor die when such a structure is configured thereon.

[0097] Additionally, the analysis of the image data may optionally further include determining the position and orientation of the pickup surface of the pickup arm relative to the active surface of the semiconductor die, such as... Figure 10AThis is illustrated in action 1010. For example, based on the analysis described above regarding actions 1006 and 1008, the controller can identify the active surface of the semiconductor die, and based on the known position of the second 3D sensor relative to the pickup surface of the pickup arm, the controller can determine the orientation of the pickup surface relative to the active surface. For example, the controller can determine whether the angle defined between the active surface and the pickup surface is within an acceptable range (e.g., less than about 30 μm to about 50 μm) to avoid damage to the semiconductor die during subsequent pickup processes. In other words, the controller can identify the non-coplanarity between the pickup surface and the active surface and the degree (e.g., severity) of the non-coplanarity.

[0098] Based on the above... Figure 10A Actions 1006 and 1008 describe the analyzed and identified objects and unacceptable surface topologies. Method 1000 may optionally include initiating one or more remedial actions, such as... Figure 10A Action 1012 illustrates this. For example, in response to identifying (e.g., detecting) one or more objects and surface topologies (e.g., defects, contamination, particles, damage), the controller can implement remedial measures.

[0099] In some embodiments, initiating one or more remedial measures may include discarding the semiconductor die, such as Figure 10A Action 1014 is shown. For example, in response to identifying defects and / or damage to a semiconductor die, the controller may cause the semiconductor die to be discarded (e.g., not removed from the dicing tape or otherwise discarded).

[0100] In some embodiments, initiating one or more remedial measures may include initiating a cleaning process to clean the active surfaces of the semiconductor die, such as... Figure 10A Action 1016 is illustrated. For example, in response to identifying particles or contamination on the active surface of a semiconductor die, the controller may initiate a cleaning process to clean the active surface of the semiconductor die. In one or more embodiments, the cleaning process may include cleaning the active surface of the semiconductor die with air. For example, the cleaning process may include blowing air (e.g., spraying) across the active surface of the semiconductor die. In yet another embodiment, the cleaning process may include vacuum cleaning the active surface of the semiconductor die.

[0101] In some embodiments, initiating one or more remedial measures may include triggering an alarm, such as Figure 10AAction 1018 illustrates this. For example, in response to the identification of particles, contamination, defects, and / or damage, the controller may trigger an alarm requesting operator attention and inspection. In some embodiments, the alarm may be triggered in response to a selected number (e.g., one, two, three, four, or more) of particles, contamination, defects, and / or damage. Additionally, in response to the identification of particles, contamination, defects, and / or damage, the controller may cause the semiconductor die to be reworked. Furthermore, in response to the identification of particles, contamination, defects, and / or damage, the controller may initiate another inspection of the semiconductor die (e.g., a re-inspection). As noted above, in some embodiments, which remedial actions are initiated by the inspection system may be at least in part based on the determined size of the contamination, defects, and / or particles. For example, some sizes of contamination, defects, and / or particles may only require a warning alarm, while others may require stopping the operation of the pick-up and place equipment and require operator attention.

[0102] As noted above, method 1000 may include determining the position and orientation of the pickup surface of the pickup arm relative to the active surface of the semiconductor die. In response to identifying non-coplanarity between the pickup surface of the pickup arm and the active surface of the semiconductor die (e.g., defined by an indication that the angle between the pickup surface and the active surface is outside an acceptable range or that the pickup arm has deviated from calibration), method 1000 may include recalibrating the pickup arm, such as... Figure 10A Action 1020 is shown. For example, the controller can be activated via the above-mentioned... Figure 8A and 8B Actions 820 and 840 describe any method for recalibrating the pickup arm.

[0103] After determining that the active surface of the semiconductor die is free of defects, contamination, and particles, and that there is coplanarity between the pickup surface of the pickup arm and the active surface of the semiconductor die, method 1000 may include picking up the semiconductor from the dicing tape, such as... Figure 10A As shown in action 1022. For example, method 1000 may include actions described above regarding... Figure 1 , 4A Anyone who picks up a semiconductor die from a dicing tape in the manner described in 4C and 4F.

[0104] After picking up the semiconductor die from the dicing tape, method 1000 includes lifting the pickup arm and the second 3D sensor, moving the pickup arm and the second 3D sensor in the X, Y, and Z directions, and / or rotating the pickup arm and the second 3D sensor about the lateral axis LA and the longitudinal axis LO to present the semiconductor die to the bonding tip surface and for performing subsequent transfer processes, such as... Figure 10A As shown in action 1024. For example, the pickup arm and the second 3D sensor can be moved and oriented to present a semiconductor to the surface of the engagement tip and for use via the above-mentioned... Figure 1 and Figure 5AAny party described in the manner performs the subsequent transfer process.

[0105] In response to the orientation pickup arm and the second 3D sensor for performing the transfer process, method 1000 may include capturing image data via a first 3D sensor (e.g., first 3D sensor 608) and / or a second 3D sensor and receiving image data from the first 3D sensor and / or the second 3D sensor, such as... Figure 10A As illustrated in action 1026. For example, a controller operatively coupled to the pickup arm, the engagement tip, the first 3D sensor, and the second 3D sensor can cause the first 3D sensor and / or the second 3D sensor to capture and receive image data. The image data may include image data (e.g., images, light data, laser data) of the engagement tip surface and / or the back side of the semiconductor die. As noted above, in some embodiments, the first 3D sensor and the second 3D sensor may include a laser system, and the image data may include three-dimensional contour data. In some embodiments, the image data may include one or more of still image data (e.g., one or more discrete image data packets (e.g., one or more still images)) and video data (e.g., at least substantially continuous image data).

[0106] After receiving the image data, method 1000 includes analyzing the image data, such as... Figure 10B Action 1028 is shown. For example, the controller can analyze image data. In some embodiments, analyzing the image data can identify objects represented in the image data, such as... Figure 10B The action 1030 is shown. The controller can be accessed via the above-mentioned... Figure 8A and 8B Any of the persons described in actions 806 and 808 analyze image data to identify a semiconductor die, the active surface of the semiconductor die, a bonding tip, the surface of the bonding tip, and any other objects (e.g., particles, contaminants, defects) on or at the active surface of the semiconductor die and / or the surface of the bonding tip of the bonding tip. In some embodiments, identifying objects represented within the image data may include determining the size of the object (e.g., particles, contaminants, defects).

[0107] Additionally, the analysis of the image data may optionally further include determining the position and orientation of the bonding tip surface relative to the back surface of the semiconductor die, such as... Figure 10BThis is illustrated in action 1032. For example, through the analysis described above regarding actions 1028 and 1030, the controller can identify the bonding tip surface of the bonding tip and the back surface of the semiconductor die, and based on the known position of the first 3D sensor relative to the bonding tip surface, the controller can determine the orientation of the bonding tip surface relative to the back surface of the semiconductor die. For example, the controller can determine whether the angle defined between the bonding tip surface and the back surface of the semiconductor die is within an acceptable range (e.g., less than 30 μm) to avoid damage to the semiconductor die during subsequent transfer processes. In other words, the controller can identify the non-coplanarity between the bonding tip surface and the back surface of the semiconductor die and the degree (e.g., severity) of the non-coplanarity.

[0108] Based on the above... Figure 10B The objects identified by the analysis described in actions 1028 and 1030, method 1000 may optionally include initiating one or more remedial measures, such as Figure 10B Action 1033 illustrates this. For example, in response to the identification (e.g., detection) of one or more objects (e.g., defects, contamination, particles, damage), the controller can implement remedial measures.

[0109] In some embodiments, initiating one or more remedial measures may include discarding the semiconductor die, such as Figure 10B Action 1034 illustrates this. For example, in response to identifying defects and / or damage to a semiconductor die, the controller may cause the semiconductor die to be discarded (e.g., not removed from the dicing tape or otherwise discarded). Additionally, in some embodiments, in response to identifying particles, contamination, defects, and / or damage, the controller may cause the semiconductor die to be reworked. Furthermore, in response to identifying particles, contamination, defects, and / or damage, the controller may initiate another inspection of the semiconductor die (e.g., re-inspection). As noted above, in some embodiments, which remedial actions are initiated by the inspection system may be at least in part based on the determined size of the contamination, defects, and / or particles. For example, some sizes of contamination, defects, and / or particles may only require a warning alarm, while others may require stopping the operation of the pick-up and place equipment and require operator attention.

[0110] In some embodiments, initiating one or more remedial measures may include initiating a cleaning process to clean the back side of the semiconductor die and / or the bonding tip surface of the connector, such as Figure 10BAction 1036 is illustrated. For example, in response to identifying particles or contamination on the back side of a semiconductor die, the controller may initiate a cleaning process to clean the back side of the semiconductor die. In one or more embodiments, the cleaning process may include cleaning the back side of the semiconductor die with air. For example, the cleaning process may include blowing air (e.g., a blow jet) across the active surface of the semiconductor die. Additionally, in response to identifying particles or contamination on the surface of the bonding tip, the controller may initiate a cleaning process to clean the surface of the bonding tip. In some embodiments, the cleaning process may include cleaning the bonding tip with a cleaning fluid. For example, the cleaning process may include immersing the bonding tip in a cleaning solvent at a cleaning station. In additional embodiments, the cleaning process may include cleaning the surface of the bonding tip with air. For example, the cleaning process may include blowing air (e.g., a blow jet) across the surface of the bonding tip. In another embodiment, the cleaning process may include scrubbing the surface of the bonding tip with a brush. In yet another embodiment, the cleaning process may include vacuum cleaning the surface of the bonding tip of the semiconductor die.

[0111] In some embodiments, initiating one or more remedial measures may include replacing the engagement tip, such as Figure 10B Action 1037 illustrates this. For example, in response to identifying a defect on the surface of the engagement tip, the controller can initiate a replacement process to replace the engagement tip. For instance, the controller can trigger an alarm indicating that the engagement tip is defective and needs to be replaced.

[0112] In some embodiments, initiating one or more remedial measures may include triggering an alarm, such as Figure 10B Action 1038 is illustrated. For example, in response to the identification of particles, contamination, defects, and / or damage, the controller may trigger an alarm requesting operator attention and inspection. In some embodiments, the alarm may be triggered in response to a selected number (e.g., one, two, three, four, or more) of particles, contamination, defects, and / or damage. Additionally, in response to the identification of particles, contamination, defects, and / or damage, the controller may cause the semiconductor die to be reworked. Furthermore, in response to the identification of particles, contamination, defects, and / or damage, the controller may initiate another inspection of the semiconductor die (e.g., a re-inspection).

[0113] As noted above, method 1000 may include determining the position and orientation of the bonding tip surface relative to the back surface of the semiconductor die. In response to identifying non-coplanarity between the bonding tip surface and the back surface (e.g., an indication that the angle between the bonding tip surface and the back surface is outside an acceptable range or that the pickup arm has deviated from calibration), method 1000 may include recalibrating the pickup arm, such as... Figure 10B Action 1040 is shown. For example, the controller can be activated via the above-mentioned... Figure 8A and 8BActions 820 and 840 describe any method for recalibrating the pickup arm.

[0114] After determining that the back side of the semiconductor die and the surface of the bonding tip are free of defects, contamination, and particles, and that the surface of the bonding tip is parallel to the back side, method 1000 may include transferring the semiconductor from the pick-up arm to the bonding tip, such as... Figure 10B As shown in action 1042. For example, method 1000 may include actions described above regarding... Figure 1 and 5A The method described describes how any party transfers a semiconductor die from the pick-up arm.

[0115] Still referencing Figure 10A and 10B and method 1000, Figure 8A and 8B Any of the actions in method 800 can Figure 10A and 10B Inserted between, before, and / or after actions. Additionally, Method 1000 provides the above information regarding... Figure 8A and 8B Any of the advantages described.

[0116] Also refer to Figure 4A to 1 In some embodiments, the inspection system described herein may utilize one or more machine learning models to analyze image data and detect objects represented in the image data. In one or more embodiments, applying one or more machine learning models may include analyzing the image data by applying machine learning and / or deep learning techniques, such techniques including feeding a training corpus to a matching learning algorithm or neural network to train the machine to recognize objects within the image data and to correlate events of the objects with previously performed process actions on the semiconductor die. In some embodiments, the inspection system may utilize one or more of regression models (e.g., a set of statistical processes for estimating relationships between variables), classification models, and / or phenomenon models to analyze the image data. Additionally, the machine learning model may include quadratic regression analysis, logistic regression analysis, support vector machines, Gaussian process regression, ensemble models, or any other regression analysis. Furthermore, in yet another embodiment, the machine learning model may include decision tree learning, regression trees, boosting trees, gradient boosting trees, multilayer perceptrons, one-to-many, Naive Bayes, k-nearest neighbors, association rule learning, neural networks, deep learning, pattern recognition, or any other type of machine learning.

[0117] For example, the inspection system may apply one or more of the aforementioned machine learning techniques to the results of image data and image analysis (e.g., detected objects). Furthermore, by applying one or more machine learning techniques to the data, the inspection system can identify evidence of contamination, defects, particles, and / or non-coplanarity. In some embodiments, the operational flow and / or logic of the inspection system may include action flows for different cases. For example, a first operational flow may include a decision tree used when evidence of contamination, defects, particles, and / or non-coplanarity is detected. Another operational flow may include a decision tree used when no evidence of contamination, defects, particles, and / or non-coplanarity is detected. Given the foregoing, the operational flow may be related to feedback data detected in the image data and / or data obtained from subsequent steps in processing the semiconductor die.

[0118] As a non-limiting example, an inspection system can utilize its feedback loop by identifying evidence of contamination, defects, particles, and / or non-coplanarity, determining previous process steps (e.g., dicing, forming) performed on the semiconductor die, previously used equipment, and previous use of pick-up arms and / or bonding tips. In other words, via machine learning modeling techniques, the inspection system can learn the correlation between: (1) evidence of contamination, defects, particles, contamination rate, defect rate, and / or particle rate and / or non-coplanarity and previous process steps, and (2) previous use of pick-up arms and / or bonding tips and equipment previously used during the packaging process. In other words, the inspection system can learn the relationship between: (1) evidence of contamination, defects, particles, contamination rate, defect rate, and / or particle rate and / or non-coplanarity, and (2) the operational and / or logical flow of the inspection system and pick-up and placement equipment and other equipment used for handling and manufacturing semiconductor dies. For example, the machine learning model is trained via supervised and / or unsupervised learning, as known in the field. After a sufficient number of iterations, the machine learning model becomes a trained machine learning model. In some embodiments, the machine learning model may also be trained based on historical data from previous use of the inspection system and pick-and-place equipment (e.g., image data, data reflecting previous use of the pick-and-place equipment, evidence of contamination, defects, particles, and / or non-coplanarity data) and / or expert input data and / or relevant literature. In one or more embodiments, through machine learning analysis, the inspection system may learn how to adjust the orientation of the pick-up arm, ejector, and / or engagement tip to achieve coplanarity. In additional embodiments, through machine learning analysis, the inspection system may know, through contamination, defects, particles, and / or contamination rate, defect rate, and / or particle rate, to indicate wear within the pick-and-place equipment and / or other equipment used for handling and / or manufacturing semiconductor dies. In additional embodiments, through machine learning analysis, the inspection system may know, through contamination, defects, particles, and / or contamination rate, defect rate, and / or particle rate, to indicate the need for specific maintenance or the need for adjustment or modification of earlier processes.

[0119] Also refer to Figure 4A to 1 0. The inspection systems and methods described herein are also applicable to other semiconductor manufacturing processes, such as (for example) tape-and-reel systems and wafer pick-up from carriers.

[0120] Embodiments of this disclosure include an apparatus for handling a microelectronic device. The apparatus includes: a connector; a connector tip coupled to the connector and having a connector tip surface configured to receive a microelectronic device thereon; a first 3D sensor carried by the connector; a pickup arm drive; a pickup arm coupled to the pickup arm drive and having a pickup surface configured to receive the microelectronic device thereon; and a second 3D sensor carried by the pickup arm drive. The apparatus further includes a controller configured to: receive first image data from the first 3D sensor, the first image data including image data of the pickup surface of the pickup arm; and receive second image data from the second 3D sensor, the second image data including image data of the connector tip surface of the connector tip.

[0121] Embodiments of this disclosure include a method comprising: moving a pickup arm to a first position relative to an engagement tip, wherein a pickup surface of the pickup arm is within the field of view of a first 3D sensor coupled to the engagement tip; capturing image data of the pickup surface via the first 3D sensor; and analyzing the image data of the pickup surface.

[0122] Embodiments of this disclosure include an apparatus for handling a microelectronic device. The apparatus includes: a connector; a connector tip coupled to the connector and having a connector tip surface configured to receive a microelectronic device thereon; a pickup arm drive; a pickup arm coupled to the pickup arm drive and having a pickup surface configured to receive the microelectronic device thereon; and at least one 3D sensor configured to capture image data of the connector tip surface and image data of the pickup surface.

[0123] Embodiments of this disclosure further include:

[0124] Example 1. An apparatus for handling a microelectronic device, comprising: a connector; a connector tip coupled to the connector and having a connector tip surface configured to receive a microelectronic device thereon; a first 3D sensor carried by the connector; a pickup arm drive; a pickup arm coupled to the pickup arm drive and having a pickup surface configured to receive the microelectronic device thereon; and a second 3D sensor carried by the pickup arm drive.

[0125] Example 2. The device according to Example 1, wherein at least one of the first 3D sensor or the second 3D sensor includes a laser system.

[0126] Example 3. The device according to any one of Examples 1 or 2 further includes a controller operatively coupled to the first 3D sensor and the second 3D sensor, the controller including: at least one processor; and at least one non-transitory computer-readable storage medium storing instructions that, when executed by the at least one processor, cause the controller to: receive first image data from the first 3D sensor, the first image data including image data of the pickup surface of the pickup arm; and receive second image data from the second 3D sensor, the second image data including image data of the engagement tip surface of the engagement tip.

[0127] Example 4. The device according to Example 3 further includes instructions that, when executed by the at least one processor, cause the controller to: analyze the first image data; analyze the second image data; detect one or more of defects, particles, or contaminants on the pickup surface of the pickup arm, based at least in part on the analysis of the first image data; and detect one or more of defects, particles, or contaminants on the engagement tip surface of the engagement tip, based at least in part on the analysis of the second image data.

[0128] Example 5. The device according to Example 4 further includes instructions that, when executed by the at least one processor, cause the controller to: determine, at least in part, the position of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip, based on the analysis of at least one of the first image data and the second image data; and determine, at least in part, whether the pickup surface is parallel to the engagement tip surface, based on the determined position of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip.

[0129] Example 6. The device according to any one of Examples 4 or 5, further comprising instructions that, when executed by the at least one processor, cause the controller to initiate remedial measures in response to detecting a defect, particle, or contamination on one or more of the pickup surface of the pickup arm or the engagement tip surface of the engagement tip.

[0130] Example 7. The device according to any one of Examples 5 or 6 further includes instructions that, when executed by the at least one processor, cause the controller to initiate remedial measures in response to determining that the pickup surface is not parallel to the engagement tip surface.

[0131] Example 8. The device according to Example 6, wherein initiating remedial measures includes at least one of the following: cleaning one or more of the pickup surface or the engagement tip surface; replacing one or more of the pickup arm or the engagement tip; or triggering an alarm.

[0132] Example 9. The device according to Example 7, wherein initiating remedial measures includes recalibrating one or more of the pickup arm or the engagement tip.

[0133] Example 10. The device according to any one of Examples 4 to 9, further comprising instructions that, when executed by the at least one processor, cause the controller to: move the pickup arm to a first position where the engagement tip surface is within the field of view of the second 3D sensor; capture image data of the engagement tip surface using the second 3D sensor; move the pickup arm to a second position where the pickup surface is within the field of view of the first 3D sensor; and capture image data of the pickup surface using the first 3D sensor.

[0134] Example 11. A method comprising: moving a pickup arm to a first position relative to an engagement tip, wherein a pickup surface of the pickup arm is within the field of view of a first 3D sensor coupled to the engagement tip; capturing first image data of the pickup surface via the first 3D sensor; and analyzing the first image data of the pickup surface.

[0135] Example 12. The method according to Example 11 further includes: moving the pickup arm to a second position relative to the engagement tip, wherein the engagement tip surface of the engagement tip is within the field of view of a second 3D sensor coupled to the pickup arm; capturing second image data of the engagement tip surface via the second 3D sensor; and analyzing the second image data of the engagement tip surface.

[0136] Example 13. The method according to Example 12, further comprising: determining, at least in part based on the analysis of at least one of the first image data of the pickup surface and the second image data of the engagement tip surface, the orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip; and determining, at least in part based on the determined orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip, whether the angle defined between the pickup surface and the engagement tip surface is within an acceptable range.

[0137] Example 14. The method according to Example 13 further includes: initiating remedial measures in response to determining that the angle defined between the pickup surface and the engagement tip surface is outside an acceptable range.

[0138] Example 15. The method according to Example 14, wherein initiating remedial measures includes recalibrating one or more of the pickup arm or the engagement tip.

[0139] Example 16. The method according to any one of Examples 13 to 15, further comprising: detecting one or more of defects, particles or contamination on the pickup surface of the pickup arm based at least in part on the analysis of the first image data; and detecting one or more of defects, particles or contamination on the engagement tip surface of the engagement tip based at least in part on the analysis of the second image data.

[0140] Example 17. The method according to any one of Examples 12 to 16, further comprising: detecting one or more of defects, particles or contamination on the pickup surface of the pickup arm based at least in part on the analysis of the first image data; and detecting one or more of defects, particles or contamination on the engagement tip surface of the engagement tip based at least in part on the analysis of the second image data.

[0141] Example 18. The method according to Example 17 further includes: initiating remedial measures in response to detecting a defect, particle, or contamination on one or more of the pickup surface of the pickup arm or the engagement tip surface of the engagement tip.

[0142] Example 19. The method according to any of Examples 12 to 16, wherein analyzing one or more of the first image data or the second image data includes applying one or more machine learning techniques to one or more of the first image data or the second image data.

[0143] Example 20. An apparatus for handling a microelectronic device, comprising: a connector; a connector tip coupled to the connector and having a connector tip surface configured to receive a microelectronic device thereon; a pickup arm drive; a pickup arm coupled to the pickup arm drive and having a pickup surface configured to receive the microelectronic device thereon; and at least one 3D sensor configured to capture image data of the connector tip surface and image data of the pickup surface.

[0144] While certain illustrative embodiments have been described with reference to the figures, those skilled in the art will recognize and understand that the embodiments covered by this disclosure are not limited to those explicitly shown and described herein. Rather, many additions, deletions, and modifications can be made to the embodiments described herein without departing from the scope of the embodiments covered by this disclosure (e.g., the scope of the appended claims, including legal equivalents). Furthermore, features from one disclosed embodiment may be combined with features from one or more other disclosed embodiments while still being covered within the scope of this disclosure.

Claims

1. An apparatus for handling microelectronic devices, comprising: Connector; A bonding tip, which is coupled to the bonding head and has a bonding tip surface configured thereon to receive a microelectronic device; A first 3D sensor, which is carried by the joint; Pickup arm drive; A pickup arm coupled to a pickup arm drive and having a pickup surface configured thereon to receive the microelectronic device; and The second 3D sensor is driven and carried by the pickup arm; The first 3D sensor is configured to capture first image data including image data of the pickup surface of the pickup arm, and the second 3D sensor is configured to capture second image data including image data of the joint tip surface, in order to identify one or more of defects, particles or contaminants on the pickup surface and the joint tip surface, or to identify the non-coplanarity of the pickup arm relative to the joint tip.

2. The device according to claim 1, wherein at least one of the first 3D sensor or the second 3D sensor comprises a laser system.

3. The device of claim 1, further comprising a controller operatively coupled to the first 3D sensor and the second 3D sensor, the controller comprising: At least one processor; and At least one non-transitory computer-readable storage medium having instructions stored thereon that, when executed by the at least one processor, cause the controller to: Receive the first image data from the first 3D sensor; and The second image data is received from the second 3D sensor.

4. The device of claim 3, further comprising instructions that, when executed by the at least one processor, cause the controller to: Analyze the first image data; Analyze the second image data; Based at least in part on the analysis of the first image data, detect one or more of the following on the pickup surface of the pickup arm: defects, particles, or contamination; and Based at least in part on the analysis of the second image data, one or more of the defects, particles, or contaminants on the surface of the joint tip are detected.

5. The device of claim 4, further comprising instructions that, when executed by the at least one processor, cause the controller to: Based at least in part on the analysis of at least one of the first image data and the second image data, the position of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip is determined; and Whether the pickup surface is parallel to the engagement tip surface is determined, at least in part, based on the determined position of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip.

6. The device of claim 4, further comprising instructions that, when executed by the at least one processor, cause the controller to initiate remedial measures in response to detecting a defect, particle, or contamination on one or more of the pickup surface of the pickup arm or the engagement tip surface of the engagement tip.

7. The device of claim 5, further comprising instructions that, when executed by the at least one processor, cause the controller to initiate remedial measures in response to determining that the pickup surface is not parallel to the engagement tip surface.

8. The device of claim 6, wherein initiating remedial action comprises at least one of: cleaning one or more of the pickup surface or the engagement tip surface; replacing one or more of the pickup arm or the engagement tip; or triggering an alarm.

9. The device of claim 7, wherein initiating remedial measures includes recalibrating one or more of the pickup arm or the engagement tip.

10. The device of claim 4, further comprising instructions that, when executed by the at least one processor, cause the controller to: This causes the pickup arm to move to a first position where the engagement tip surface is within the field of view of the second 3D sensor; The second 3D sensor is used to capture image data of the surface of the joint tip; This causes the pickup arm to move to a second position where the pickup surface is within the field of view of the first 3D sensor; and Image data of the joint tip surface is captured using the first 3D sensor.

11. A method for processing a microelectronic device, the method comprising: The pickup arm is moved to a first position relative to the engagement tip, wherein the pickup surface of the pickup arm is within the field of view of a first 3D sensor coupled to the engagement tip; First image data of the pickup surface is captured via the first 3D sensor to identify one or more of defects, particles or contaminants on the pickup surface; and Analyze the first image data of the picking surface.

12. The method of claim 11, further comprising: The pickup arm is moved to a second position relative to the engagement tip, wherein the engagement tip surface of the engagement tip is within the field of view of a second 3D sensor coupled to the pickup arm; Second image data of the joint tip surface is captured via the second 3D sensor; and Analyze the second image data of the surface of the joint tip.

13. The method of claim 12, further comprising: The orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip is determined based at least in part on the analysis of at least one of the first image data of the pickup surface and the second image data of the engagement tip surface; and The angle defined between the pickup surface and the engagement tip surface is determined to be within an acceptable range, based at least in part on the determined orientation of the pickup surface of the pickup arm relative to the engagement tip surface of the engagement tip.

14. The method of claim 13, further comprising: Remedial measures are initiated in response to the determination that the angle defined between the pickup surface and the engagement tip surface is outside the acceptable range.

15. The method of claim 14, wherein initiating remedial measures includes recalibrating one or more of the pickup arm or the engagement tip.

16. The method of claim 13, further comprising: Based at least in part on the analysis of the first image data, detect one or more of the defects, particles, or contaminants on the pickup surface of the pickup arm; and Based at least in part on the analysis of the second image data, one or more of the defects, particles, or contaminants on the surface of the joint tip are detected.

17. The method of claim 12, further comprising: Based at least in part on the analysis of the first image data, detect one or more of the defects, particles, or contaminants on the pickup surface of the pickup arm; and Based at least in part on the analysis of the second image data, one or more of the defects, particles, or contaminants on the surface of the joint tip are detected.

18. The method of claim 17, further comprising: Remedial measures are initiated in response to the detection of defects, particles, or contamination on one or more of the pickup surface of the pickup arm or the engagement tip surface of the engagement tip.

19. The method of claim 12, wherein analyzing one or more of the first image data or the second image data includes applying one or more machine learning techniques to one or more of the first image data or the second image data.

20. An apparatus for processing microelectronic devices, comprising: Connector; A bonding tip, which is coupled to the bonding head and has a bonding tip surface configured thereon to receive a microelectronic device; Pickup arm drive; A pickup arm coupled to a pickup arm drive and having a pickup surface configured thereon to receive the microelectronic device; and At least one 3D sensor is configured to capture image data of the engagement tip surface and image data of the pickup surface to identify one or more of defects, particles, or contaminants on the pickup surface and the engagement tip surface.

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