Method for improving filling effect of FG in ETOX structure flash memory based on automatic feedback mechanism

Abstract

The application belongs to the technical field of semiconductors, and particularly relates to a method for improving FG filling effect in ETOX structure flash memory based on automatic feedback mechanism, which comprises the following steps: adjusting CD size in the ETOX structure flash memory process, so that the CD is in a control range, and actual profile is favorable for Ploy filling to improve the filling effect.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and specifically relates to a method for improving the FG filling effect in ETOX structure flash memory based on an automatic feedback mechanism. Background Technology

[0002] The filling effect of the flash cells in the ETOX structure flash memory greatly affects the operation of the flash cells. In severe cases, void will be formed, causing lot suffer yield loss.

[0003] The large variation in HARP CD caused by the previous STI CMP, WET ET and other processes resulted in inconsistent poly fill effects.

[0004] Therefore, based on the above technical problems, it is necessary to design a new method based on an automatic feedback mechanism to improve the FG filling effect in ETOX structure flash memory. Summary of the Invention

[0005] The purpose of this invention is to provide a method for improving the FG filling effect in ETOX structure flash memory based on an automatic feedback mechanism.

[0006] To address the aforementioned technical problems, this invention provides a method for improving the FG filling effect in ETOX structure flash memory, comprising:

[0007] Adjusting CD size in ETOX structure flash memory technology.

[0008] Furthermore, the method for adjusting the CD size in the ETOX structure flash memory process includes:

[0009] In the ETOX structure flash memory process, the CD size is adjusted based on an automatic feedback mechanism before the FG Poly DEP.

[0010] Furthermore, the method for adjusting the CD size in the ETOX structure flash memory process also includes:

[0011] When adjusting the CD size based on the automatic feedback mechanism, if the HARP CD is greater than the preset range, the CD is adjusted using heavy acid operation before FG filling to bring the CD within the preset range.

[0012] Furthermore, the method for adjusting the CD size in the ETOX structure flash memory process also includes:

[0013] When adjusting the CD size based on the automatic feedback mechanism, if the HARP CD is less than the preset range, the CD is adjusted using a light acid operation before FG filling to bring the CD within the preset range.

[0014] Secondly, the present invention also provides a system for improving the FG filling effect in ETOX structure flash memory, comprising:

[0015] Adjust the module to adjust the CD size in the ETOX structure flash memory process.

[0016] Thirdly, the present invention also provides a device for improving the FG filling effect in ETOX structure flash memory.

[0017] Based on the above method for improving the FG filling effect in ETOX structure flash memory, the CD size in the ETOX structure flash memory process is adjusted.

[0018] The beneficial effect of this invention is that by adjusting the CD size in the ETOX structure flash memory process, the CD is kept within a controlled range, ensuring that the actual profile is conducive to Ploy filling and thus improving its filling effect.

[0019] Other features and advantages of the invention will be set forth in the following description, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention are realized and obtained through the structures particularly pointed out in the description and the drawings.

[0020] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0021] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 This is a flowchart of the method for improving the FG filling effect in ETOX structure flash memory according to the present invention;

[0023] Figure 2 This is a schematic diagram of the FG filling effect of the present invention. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] like Figure 1 and Figure 2 As shown, this embodiment provides a method for improving the FG filling effect in ETOX structure flash memory, including: adjusting the CD size in the ETOX structure flash memory process so that the CD is within a controllable range, ensuring that the actual profile is conducive to Ploy filling to improve its filling effect.

[0026] The size of the STI HARP CD (arrow mark) affects the subsequent FG poly fill effect. A larger CD is not conducive to FG fill; a smaller CD is conducive to FG fill, but it is not conducive to CG poly fill after the process (FG CMP, CRS ET). The two are in a seesaw relationship. The STI HARP CD is affected by the previous multi-pass process and has a large inline variation.

[0027] In this embodiment, the method for adjusting the CD size in the ETOX structure flash memory process includes: adjusting the CD size based on an automatic feedback mechanism (APC) before the FG Poly DEP in the ETOX structure flash memory process.

[0028] In this embodiment, the method for adjusting the CD size in the ETOX structure flash memory process further includes: when adjusting the CD size based on the automatic feedback mechanism, if the HARP CD is greater than a preset range, then the CD is adjusted using a heavy acid operation before FG filling so that the CD is within the preset range.

[0029] In this embodiment, the method for adjusting the CD size in the ETOX structure flash memory process further includes: when adjusting the CD size based on the automatic feedback mechanism, if the HARP CD is less than a preset range, the CD is adjusted with a light acid operation before FG filling to bring the CD within the preset range, thereby bringing the CD within the control range and ensuring that the actual profile is conducive to Ploy filling to improve its filling effect.

[0030] In this embodiment, a system for improving the FG filling effect in ETOX structure flash memory is also provided, including: an adjustment module for adjusting the CD size in the ETOX structure flash memory process; and a method for improving the FG filling effect in ETOX structure flash memory through system integration.

[0031] In this embodiment, an apparatus for improving the FG filling effect in ETOX structure flash memory is also provided. The CD size in the ETOX structure flash memory process is adjusted according to the above-described method for improving the FG filling effect in ETOX structure flash memory. The apparatus can execute the process of the method for improving the FG filling effect in ETOX structure flash memory to improve the FG filling effect.

[0032] In summary, this invention adjusts the CD size in the ETOX structure flash memory process, thereby keeping the CD within a controlled range and ensuring that the actual profile is conducive to Ploy filling to improve its filling effect.

[0033] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can also be implemented in other ways. The apparatus embodiments described above are merely illustrative; for example, the flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods, and computer program products according to various embodiments of the present invention. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order than those marked in the drawings. For example, two consecutive blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram and / or flowchart, and combinations of blocks in block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or action, or using a combination of dedicated hardware and computer instructions.

[0034] In addition, the functional modules in the various embodiments of the present invention can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0035] If the aforementioned functions are implemented as software functional modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this invention, essentially, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0036] Based on the above-described preferred embodiments of the present invention, and through the foregoing description, those skilled in the art can make various changes and modifications without departing from the inventive concept. The technical scope of this invention is not limited to the contents of the specification, but must be determined according to the scope of the claims.

Claims

1. A method for improving FG filling effect in ETOX structure flash memory, characterized in that, include: In the ETOX structure flash memory process, the size of the STI HARP CD is adjusted based on an automatic feedback mechanism before the FG Poly DEP. If the STI HARP CD is greater than the preset range, adjust the STI HARP CD using heavy acid operation before filling the FG to bring the STI HARP CD within the preset range. If the STI HARP CD is less than the preset range, adjust the STI HARP CD with a light acid operation before filling with FG to bring the STI HARP CD within the preset range.

2. A system for improving FG fill effect in ETOX structure flash memory, characterized in that, include: The adjustment module adjusts the size of the STI HARP CD in the ETOX structure flash memory process using the method described in claim 1.

3. An apparatus for improving FG fill effect in ETOX structure flash memory, characterized in that ， The method for improving the FG filling effect in ETOX structure flash memory according to claim 1 adjusts the size of STI HARP CD in the ETOX structure flash memory process.

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