A ferroelectric memristor device based on lanthanum titanate and its fabrication method

By using lanthanum titanate (La2Ti2O7) as the resistive switching layer material and TiN electrode, ferroelectric memristor devices with different structures were fabricated, which solved the problem of insufficient ferroelectric memristors in simulating the functional properties of biological synapses, and realized a high-performance multi-value storage and low-cost fabrication method.

CN114284430BActive Publication Date: 2025-11-14NANJING UNIV OF POSTS & TELECOMM
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Patent Information

Application Number
CN202111369840.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-11-18
Publication Date
2025-11-14
Estimated Expiration
2041-11-18

AI Technical Summary

Technical Problem

Existing ferroelectric memristors have insufficient research on simulating the functional properties of biological synapses, and their performance depends on the properties of ferroelectric thin films. New materials and growth methods need to be explored to improve device performance.

Method used

Lanthanum titanate (La2Ti2O7) was used as the resistive switching layer material. Ferroelectric memristor devices were deposited on the substrate by radio frequency magnetron sputtering. Different types of memristor devices and array structures were designed, including single devices with the letter NJUPT, rectangular single devices, circular single devices, 3×3, 8×8 and 12×12 memristor arrays, and TiN electrodes were prepared by physical vapor deposition.

Benefits of technology

A ferroelectric memristor with good switching characteristics and stability has been realized, which is suitable for multi-value storage and simulation of human brain neurons. The fabrication method is simple and low cost, which broadens the application scenarios.

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Abstract

This invention proposes a ferroelectric memristor device based on lanthanum titanate and its fabrication method. The ferroelectric memristor device is disposed on a substrate and includes a bottom electrode, a resistive switching layer, and a top electrode arranged sequentially from bottom to top. The bottom electrode and the top electrode are made of TiN, and the resistive switching layer is made of La2Ti2O7. The bottom surface of the resistive switching layer is in contact with the top surface of the bottom electrode, and the top surface of the resistive switching layer is in contact with the bottom surface of the top electrode. The ferroelectric memristor device integrates a single device with the letter NJUPT in one region, a rectangular single device in two regions, a circular single device in three regions, nine 3×3 memristor arrays, three 8×8 memristor arrays, and one 12×12 memristor array.
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Citation Information

Patent Citations

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