Light emitting device

Abstract

A light-emitting device is provided. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer layer between the first electrode and the second electrode and including an emission layer stack, wherein the emission layer stack includes a first emission layer including a first host and a first dopant, and a second emission layer including a second host, a second dopant, and an electron transport compound, wherein the first host and the second host are different compounds from each other, the first emission layer is in contact with the second emission layer, and the second emission layer is closer to the second electrode than the first emission layer.

Description

[0001] This application claims priority and benefit to Korean Patent Application No. 10-2020-0130451, filed on October 8, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] One or more embodiments of this disclosure relate to a light-emitting device and an electronic device including the light-emitting device. Background Technology

[0003] Compared to other devices in the field, light-emitting devices are self-emitting devices with wide viewing angle, high contrast, short response time, and excellent characteristics in terms of brightness, driving voltage, and response speed.

[0004] In a light-emitting device, a first electrode is located on a substrate, and a hole transport region, an emitter layer, an electron transport region, and a second electrode are sequentially formed on the first electrode. Holes supplied from the first electrode can move towards the emitter layer through the hole transport region, and electrons supplied from the second electrode can move towards the emitter layer through the electron transport region. Charge carriers such as holes and electrons recombine in the emitter layer to generate light. Summary of the Invention

[0005] One or more embodiments include a light-emitting device that has improved efficiency and lifetime compared to other devices in the art.

[0006] Further aspects of the embodiments will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the disclosed embodiments.

[0007] According to one or more embodiments, a light-emitting device includes:

[0008] First electrode;

[0009] The second electrode faces the first electrode; and

[0010] An interlayer, located between the first electrode and the second electrode, includes an emitter layer stack, wherein,

[0011] The emitter layer stack includes: a first emitter layer comprising a first host and a first dopant; and a second emitter layer comprising a second host, a second dopant, and an electron transport compound, wherein,

[0012] The first and second entities are different compounds.

[0013] The first emission layer is in contact with the second emission layer, and

[0014] The second emitter layer is located in the direction of the second electrode.

[0015] According to one or more embodiments, an electronic device includes the light-emitting device. Attached Figure Description

[0016] The above and other aspects and features of certain embodiments disclosed will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0017] Figure 1 This is a schematic diagram of a light-emitting device according to an embodiment;

[0018] Figure 2 This is a cross-sectional view of a light-emitting device according to an embodiment; and

[0019] Figure 3 This is a cross-sectional view of a light-emitting device according to another embodiment. Detailed Implementation

[0020] Referring now to the embodiments in more detail, examples of which are illustrated in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this respect, the given embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain aspects of embodiments of this specification. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Throughout the disclosure, the expression “at least one of a, b, and c” means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0021] In existing light-emitting devices including a single-layer emitter layer, such a single-layer emitter layer (e.g., a blue emitter layer) may comprise a single host and a single dopant (e.g., composed of a single host and a single dopant). In the case of the existing host, the host has stronger electronic properties compared to hole properties, thus forming excitons at the interface between the emitter layer and the electron blocking layer. Furthermore, to improve efficiency, fast hole transport compounds are used in the hole transport layer to maximize or increase the exciton concentration at the interface between the emitter layer and the electron blocking layer. Therefore, the triplet-triplet annihilation (TTA) component can be improved, thereby increasing efficiency. Alternatively, an additional hole transport layer can be used. More specifically, an additional hole transport layer exhibiting fast charge mobility characteristics and capable of reducing the driving voltage can be co-deposited on an existing structure including a hole transport layer.

[0022] However, in this case, excitons form at the interface between the emitter layer and the electron blocking layer, which degrades the electron blocking layer, thereby improving efficiency but reducing lifetime.

[0023] In addition, efficiency can be improved by generating excitons at the interface between the two emission layers in existing light-emitting devices that include a double emission layer, thereby improving the TTA component.

[0024] One aspect of the embodiments of this disclosure provides a light-emitting device, the light-emitting device comprising:

[0025] First electrode;

[0026] The second electrode faces the first electrode;

[0027] An interlayer, located between the first electrode and the second electrode, includes an emitter layer stack, wherein,

[0028] The emitter layer stack includes: a first emitter layer comprising a first host and a first dopant; and a second emitter layer comprising a second host, a second dopant, and an electron transport compound, wherein,

[0029] The first and second entities are different compounds.

[0030] The first emission layer is in contact with the second emission layer (e.g., in physical contact), and

[0031] The second emitter layer is located in the direction of the second electrode.

[0032] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, and the light-emitting device may further include a hole transport region located between the first electrode and the emitter stack, and including a hole injection layer, a hole transport layer, an electron blocking layer, or any combination thereof.

[0033] In one or more embodiments, the first electrode may be an anode, the second electrode may be a cathode, and the light-emitting device may further include an electron transport region located between the second electrode and the emitter stack, and include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0034] The hole transport region and the electron transport region will be further described below.

[0035] In one embodiment, the emitter stack can emit blue light. In another embodiment, the emitter stack including a first emitter layer and a second emitter layer can emit blue light, regardless of the type of light emitted by each of the first and second emitter layers. In one or more embodiments, the first emitter layer can emit white light, the second emitter layer can emit blue light, and the emitter stack including the first and second emitter layers can emit blue light. In one or more embodiments, the first emitter layer can emit blue light, the second emitter layer can emit white light, and the emitter stack including the first and second emitter layers can emit blue light. In one or more embodiments, the first emitter layer can emit blue light, the second emitter layer can emit blue light, and the first dopant and the second dopant included in the first and second emitter layers, respectively, can both be blue dopants. In one or more embodiments, the first dopant included in the first emitter layer and the second dopant included in the second emitter layer can be the same as or different from each other.

[0036] In one or more embodiments, the first emitting layer may emit blue light.

[0037] In one or more embodiments, the second emitting layer may emit blue light.

[0038] In the embodiments, the hole mobility (M) of the electron transport compound is... H ) and electron mobility (M E It can satisfy formula (1):

[0039] M H ≤M E ×0.95 (1).

[0040] Formula (1) is expressed as follows: the electron transport compound has both hole transport capability and electron transport capability, but the electron transport capability is equal to or at least slightly greater than the hole transport capability.

[0041] Regarding electron transport capability, when an electron transport compound satisfying formula (1) is used in conjunction with a second host and a second dopant included in the second emitter layer, the electron mobility characteristics of the second host can be improved. Therefore, the region where excitons are generated at the interface between the first and second emitter layers is significantly narrowed, resulting in a maximization or increase in the TTA component. Thus, the problem of reduced lifetime associated with emission at the interface between the first and second emitter layers can be solved or improved, and concurrently (e.g., simultaneously), efficiency can also be maximized or improved.

[0042] In the embodiments, the electron transport compound may include: a compound containing a CN moiety; a compound containing a triazole moiety; a compound containing an oxadiazole moiety; a compound containing an aromatic imidazole moiety; a compound containing a naphthalimide moiety; a compound containing a perylene moiety; a boron-containing compound; a compound containing anthracene and phosphine oxide moiety; a compound containing a triazine moiety; a compound containing a pyridine moiety; a compound containing a pyrimidine moiety; and / or a compound containing a carbazole moiety.

[0043] The aromatic imidazole moiety can refer to, for example, the following moiety (where substituents are omitted for clarity):

[0044]

[0045] The naphthalimide moiety can refer to, for example, the following moiety (where substituents are omitted for clarity):

[0046]

[0047] Compounds containing anthracene and phosphine oxide moieties can be represented by Formula 1:

[0048] Formula 1

[0049]

[0050] In Equation 1,

[0051] R, Ar1, Ar2, and X can all be independently unsubstituted or substituted with at least one R. 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic groups, and

[0052] m and n can both be independent integers from 1 to 5.

[0053] In the embodiments, the electron transport compound may include one of the following compounds:

[0054]

[0055]

[0056]

[0057]

[0058]

[0059]

[0060] In one embodiment, the amount of electron transport compound in the second emitter layer may be equal to or less than 20 wt%, based on the total amount of compounds in the second emitter layer. In one or more embodiments, the amount of electron transport compound in the second emitter layer may exceed 0 wt% and may be equal to or less than 20 wt%, based on the total amount of compounds in the second emitter layer. In one or more embodiments, the amount of electron transport compound in the second emitter layer may be in the range of about 5 wt% to about 15 wt%.

[0061] When the amount of electron transport compound in the second emitting layer exceeds 20 wt%, the efficiency and lifetime of the light-emitting device exceed their optimal levels.

[0062] In this embodiment, the first and second emitting layers can emit light according to the delayed fluorescence mechanism.

[0063] In one or more embodiments, the first dopant and the second dopant can be any suitable dopant capable of emitting delayed fluorescence. In one or more embodiments, the first dopant and the second dopant can be the same as or different from each other.

[0064] In one embodiment, holes injected from the first electrode and electrons injected from the second electrode can recombine at the interface between the first and second emission layers.

[0065] In the embodiments, the first host may be the following compound:

[0066]

[0067] In the embodiments, the second host may be the following compound:

[0068]

[0069] Another aspect of the embodiments of this disclosure provides an electronic device including a light-emitting device.

[0070] In an embodiment, the electronic device may further include a thin-film transistor, wherein:

[0071] Thin-film transistors can include source electrodes and drain electrodes (or active layers), and

[0072] The first electrode of the light-emitting device can be electrically coupled to at least one selected from the source electrode and drain electrode of the thin-film transistor.

[0073] In embodiments, the electronic device may also include a color filter, a color conversion layer, a touch screen layer, a polarizing layer, or any combination thereof.

[0074] As used herein, the term "interlayer" refers to a single layer and / or all of the multiple layers located between the first electrode and the second electrode of a light-emitting device.

[0075] Figure 1 Description

[0076] Figure 1 This is a schematic cross-sectional view of the light-emitting device 10 according to an embodiment. The light-emitting device 10 includes a first electrode 110, an interlayer layer 130, and a second electrode 150.

[0077] In the following text, we will combine Figure 1 The structure of the light-emitting device 10 according to the embodiments and the method of manufacturing the light-emitting device 10 are described below.

[0078] First electrode 110

[0079] exist Figure 1 In this embodiment, the substrate may be additionally located below the first electrode 110 or above the second electrode 150. As the substrate, a glass substrate and / or a plastic substrate may be used. In embodiments, the substrate may be a flexible substrate and may comprise plastics with excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0080] The first electrode 110 can be formed, for example, by depositing and / or sputtering a material for forming the first electrode 110 onto a substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 can be a high work function material that promotes hole injection.

[0081] The first electrode 110 may be a reflective electrode, a semi-transparent electrode, or a transmissive electrode. In embodiments, when the first electrode 110 is a transmissive electrode, the material used to form the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof. In one or more embodiments, when the first electrode 110 is a semi-transparent electrode or a reflective electrode, the material used to form the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0082] The first electrode 110 may have a single-layer structure comprising a single layer (e.g., composed of a single layer) or a multi-layer structure comprising multiple layers. For example, the first electrode 110 may have a three-layer structure of ITO / Ag / ITO.

[0083] Interlayer 130

[0084] Interlayer 130 is located on the first electrode 110. Interlayer 130 may include an emitter layer.

[0085] The interlayer 130 may also include a hole transport region located between the first electrode 110 and the emitter layer and an electron transport region located between the emitter layer and the second electrode 150.

[0086] In addition to various suitable organic materials, the interlayer 130 may also include metal-containing compounds (such as organometallic compounds), inorganic materials (such as quantum dots), etc.

[0087] The interlayer 130 may include: i) two or more emitting layers, sequentially stacked between the first electrode 110 and the second electrode 150; and ii) a charge generating layer located between the two emitting layers. When the interlayer 130 includes the emitting layer and the charge generating layer as described above, the light-emitting device 10 may be a tandem light-emitting device.

[0088] The charge generation layer may include a p-charge generation layer and / or an n-charge generation layer.

[0089] In the embodiments, the p-charge generating layer may include quinone derivatives, cyano-containing compounds, or any combination thereof.

[0090] In this embodiment, the thickness of the p-charge generation layer can be approximately [missing information]. to approximately Within a certain range. In one or more embodiments, the thickness of the p-charge generation layer can be approximately... to approximately Within the range.

[0091] In this embodiment, the thickness of the n-charge generation layer can be approximately to approximately (For example, about to approximately Within the range of ), in one or more embodiments, the thickness of the n-charge generation layer can be approximately to approximately Within the range.

[0092] Hole transport region in interlayer layer 130

[0093] The hole transport region may have: i) a single-layer structure comprising a single layer (e.g., composed of a single layer) comprising a single material (e.g., composed of a single material); ii) a single-layer structure comprising a single layer (e.g., composed of a single layer) comprising multiple different materials (e.g., composed of multiple different materials); or iii) a multi-layer structure comprising multiple layers containing different materials.

[0094] The hole transport region may include a hole injection layer, a hole transport layer, an emission assist layer, an electron blocking layer, or any combination thereof.

[0095] For example, the hole transport region may have a multi-layer structure, including a hole injection layer / hole transport layer structure, a hole injection layer / hole transport layer / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, a hole transport layer / emission auxiliary layer structure, or a hole injection layer / hole transport layer / electron blocking layer structure, wherein the layers in each structure are sequentially stacked on the first electrode 110.

[0096] The hole transport region may include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof:

[0097] Formula 201

[0098]

[0099] Formula 202

[0100]

[0101] In Equations 201 and 202,

[0102] L 201 To L 204 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0103] L 205 It can be *-O-*', *-S-*', or *-N(Q) 201 )-*', unsubstituted or substituted with at least one R 10a C1-C 20 Alkylene, unsubstituted or substituted with at least one R 10a C2-C 20 alkenyl, unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0104] xa1 to xa4 can each be an independent integer from 0 to 5.

[0105] xa5 can be an integer from 1 to 10.

[0106] R 201 To R 204 and Q 201 Each can be independently unsubstituted or substituted with at least one R10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0107] R 201 and R 202 It can optionally be via a single bond, unsubstituted or substituted with at least one R 10a C1-C5 alkylene groups or unsubstituted or substituted groups having at least one R 10a The C2-C5 alkenyl groups are linked together to form unsubstituted or substituted groups with at least one R group. 10a C8-C 60 Polycyclic groups (e.g., carbazole groups, etc.) (see compounds HT16, etc.)

[0108] R 203 and R 204 It can optionally be via a single bond, unsubstituted or substituted with at least one R 10a C1-C5 alkylene groups or unsubstituted or substituted groups having at least one R 10a The C2-C5 alkenyl groups are linked together to form unsubstituted or substituted groups with at least one R group. 10a C8-C 60 Polycyclic groups, and

[0109] na1 can be an integer from 1 to 4.

[0110] In an embodiment, each of Formulas 201 and 202 may include at least one of the groups represented by Formulas CY201 to CY217.

[0111]

[0112] In formulas CY201 to CY217, R 10b and R 10c It can be combined with R 10a The descriptions are the same, CY ring 201 To CY 204 Each can be independently C3-C 20 Carbocyclic or C1-C 20 Heterocyclic group, and at least one hydrogen in formulas CY201 to CY217 may be unsubstituted or replaced by at least one R 10a replace.

[0113] In one or more embodiments, the ring CY 201 To CY 204 Each group can be independently a phenyl group, a naphthol group, a phenanthrene group, or anthracene group.

[0114] In one or more embodiments, each of Formulas 201 and 202 may include at least one of the groups represented by Formulas CY201 to CY203.

[0115] In one or more embodiments, Formula 201 may include at least one of the groups represented by Formulas CY201 to CY203 and at least one of the groups represented by Formulas CY204 to CY217.

[0116] In one or more embodiments, xa1 in equation 201 can be 1, R 201 It is a group represented by one of the formulas CY201 to CY203, where xa2 can be 0, and R 202 It can be a group represented by one of the formulas CY204 to CY207.

[0117] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formulas CY201 to CY203.

[0118] In one or more embodiments, each of Formulas 201 and 202 may not include the groups represented by Formulas CY201 to CY203, but may include at least one of the groups represented by Formulas CY204 to CY217.

[0119] In one or more embodiments, each of Formula 201 and Formula 202 may not include groups represented by Formulas CY201 to CY217.

[0120] For example, the hole transport region may include one or any combination of compounds HT1 to HT44, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated-NPB, TAPC, HMTPD, 4,4',4"-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA), and polyaniline / poly(4-styrenesulfonate) (PANI / PSS):

[0121]

[0122]

[0123]

[0124]

[0125]

[0126] The thickness of the hole transport region can be approximately to approximately (For example, about to approximately Within the range of ), when the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer can be approximately to approximately (For example, about to approximately Within the range of ), and the thickness of the hole transport layer can be approximately to approximately (For example, about to approximately Within these ranges, suitable or satisfactory hole transport characteristics can be obtained without significantly increasing the driving voltage when the hole transport region, hole injection layer, and hole transport layer thickness are within these ranges.

[0127] The emission assist layer can improve luminous efficiency by compensating for the optical resonant distance according to the wavelength of the light emitted by the emission layer, and the electron blocking layer can block or reduce the flow of electrons from the electron transport region. The emission assist layer and the electron blocking layer can include the materials described above.

[0128] p-doped agent

[0129] In addition to these materials, the hole transport region may also include a charge-generating material for improving conductivity properties (e.g., electrical conductivity). The charge-generating material may be uniformly or non-uniformly dispersed in the hole transport region (e.g., in the form of a monolayer comprising the charge-generating material (e.g., composed of the charge-generating material)).

[0130] The charge-generating material can be, for example, a p-doped agent.

[0131] For example, the lowest unoccupied molecular orbital (LUMO) level of a p-doped agent can be equal to or less than -3.5 eV.

[0132] In the embodiments, the p-doper may include quinone derivatives, cyano-containing compounds, compounds containing elements EL1 and EL2, or any combination thereof.

[0133] Examples of quinone derivatives include TCNQ, F4-TCNQ, etc.

[0134] Examples of cyano-containing compounds include HAT-CN, compounds represented by formula 221, etc.

[0135]

[0136] Equation 221

[0137] In Equation 221,

[0138] R 221 To R 223 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic groups, and

[0139] R 221 To R 223 At least one of them can be a C3-C that is independently substituted with the following groups. 60 Carbocyclic or C1-C 60 Heterocyclic groups: cyano; -F; -Cl; -Br; -I; C1-C substituents of cyano, -F, -Cl, -Br, -I, or any combination thereof. 20 Alkyl groups; or any combination thereof.

[0140] In compounds containing elements EL1 and EL2, element EL1 can be a metal, a metalloid, or a combination thereof, and element EL2 can be a nonmetal, a metalloid, or a combination thereof.

[0141] Examples of metals include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (C), etc. (e.g., o), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); later transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); and lanthanides (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.).

[0142] Examples of metalloids include silicon (Si), antimony (Sb), and tellurium (Te).

[0143] Examples of nonmetals include oxygen (O), halogens (e.g., F, Cl, Br, I, etc.).

[0144] Examples of compounds containing elements EL1 and EL2 include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides and / or metal iodides), metal halide (e.g., metal fluorides, metal chlorides, metal bromides and / or metal iodides), metal tellurides, or any combination thereof.

[0145] Examples of metal oxides include tungsten oxide (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxide (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), rhenium oxide (e.g., ReO3, etc.), etc.

[0146] Examples of metal halides include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, etc.

[0147] Examples of alkali metal halides include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0148] Examples of alkaline earth metal halides include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, etc.

[0149] Examples of transition metal halides include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), and tantalum halides (e.g., TaF3, TaCl3, TaB). r3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2). Iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2), iridium halides (e.g., IrF2, IrCl2, IrB2). r2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0150] Examples of post-transition metal halides include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), tin halides (e.g., SnI2, etc.), etc.

[0151] Examples of lanthanide metal halides include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3, SmCl3, YbBr, YbBr2, YbBr3, SmBr3, YbI, YbI2, YbI3, SmI3, etc.

[0152] Examples of quasi-metal halides include antimony halides (e.g., SbCl5, etc.).

[0153] Examples of metal tellurides include alkali metal tellurides (e.g., Li₂Te, Na₂Te, K₂Te, Rb₂Te, Cs₂Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), and transition metal tellurides (e.g., TiTe₂, ZrTe₂, HfTe₂, V₂Te₃, Nb₂Te₃, Ta₂Te₃, Cr₂Te₃, Mo₂Te₃, W₂Te₃, MnTe, TcTe, ReTe, Fe₂Te). Te, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), etc.

[0154] Emission layer in interlayer 130

[0155] When the light-emitting device 10 is a full-color light-emitting device, the emitting layer can be patterned as a red emitting layer, a green emitting layer, and / or a blue emitting layer according to the sub-pixels. The emitting layer may have a stacked structure of two or more layers selected from the red, green, and blue emitting layers, wherein the two or more layers are in contact with each other (e.g., in physical contact) or separated from each other. In one or more embodiments, the emitting layer may include two or more materials selected from the red, green, and blue emitting materials, wherein the two or more materials are mixed with each other in a single layer to emit white light.

[0156] In this embodiment, multiple emitting layers may be included in the light-emitting device.

[0157] For example, each of the multiple emission layers can emit blue light.

[0158] In this embodiment, the emitting layer may include a host and a dopant. The dopant may include phosphorescent dopant, fluorescent dopant, or any combination thereof.

[0159] Based on 100 parts by weight of the main body, the amount of dopant included in the emitter layer can range from about 0.01 parts by weight to about 15 parts by weight.

[0160] In one or more embodiments, the emission layer may include quantum dots.

[0161] In one or more embodiments, the emission layer may include a delayed fluorescence material. The delayed fluorescence material may be used as a host or dopant included in the emission layer.

[0162] The thickness of the emission layer can be approximately to approximately (For example, about to approximately Within these ranges, excellent light emission characteristics can be obtained without significantly increasing the driving voltage when the thickness of the emitting layer is within these ranges.

[0163] main body

[0164] The first subject can be a compound with strong hole-accepting properties. As used herein, "compound with strong hole-accepting properties" means a compound that readily accepts holes (e.g., has a relatively high affinity for holes), and such properties can be obtained by including a hole-accepting portion (e.g., a hole-transmitting (HT) portion).

[0165] The hole acceptor can be, for example, a π-electron-rich heteroaromatic compound (e.g., a carbazole derivative or an indole derivative) or an aromatic amine compound.

[0166] The second subject can be a compound with strong electronic properties. As used herein, "a compound with strong electronic properties" means a compound that readily accepts electrons (e.g., has a relatively high affinity for electrons), and such properties can be obtained by including an electron-accepting portion (e.g., an electron transport (ET) portion).

[0167] The electron-accepting portion can be, for example, a π-electron-depleted heteroaromatic compound. For instance, the electron-accepting portion can be a nitrogen-containing heteroaromatic compound.

[0168] When a compound consists only of the HT or ET moiety, the properties of the compound can be clearly defined as HT type or ET type.

[0169] In this embodiment, the compound may include both HT and ET moieties. In this embodiment, a simple comparison of the total number of HT moieties included in the compound with the total number of ET moieties included in the compound can serve as a criterion for predicting whether the compound is HT-type or ET-type, but it cannot be an absolute criterion (e.g., it may not be the only criterion). One reason it cannot be an absolute criterion is that each of the individual HT moieties and the individual ET moieties does not have exactly the same ability to attract holes and electrons.

[0170] Therefore, a relatively reliable method to determine whether a compound with a certain structure is of the HT or ET type is to implement the compound directly in a device.

[0171] Both the first and second subjects may independently include compounds represented by formula 301:

[0172] Formula 301

[0173] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21 ,

[0174] In Equation 301,

[0175] Ar 301 and L 301 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0176] xb11 can be 1, 2, or 3.

[0177] xb1 can be an integer from 0 to 5.

[0178] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R. 10a C1-C 60 Alkyl, unsubstituted or substituted with at least one R 10a C2-C 60 Alkenyl, unsubstituted or substituted with at least one R 10a C2-C 60 Alkyne group, unsubstituted or substituted with at least one R 10a C1-C 60 Alkyl group, unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic groups, -Si(Q) 301 (Q) 302 (Q) 303 -N(Q) 301 (Q) 302 -B(Q) 301 (Q) 302 -C(=O)(Q) 301 -S(=O)2(Q) 301 ) or -P(=O)(Q 301 (Q)302 ),

[0179] xb21 can be an integer from 1 to 5, and

[0180] Q 301 To Q 303 Can be combined with Q 11 The descriptions are the same.

[0181] For example, when xb11 in equation 301 is 2 or greater, two or more Ar 301 They can be connected to each other via a single key.

[0182] In one or more embodiments, the first body and the second body may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:

[0183] Formula 301-1

[0184]

[0185] Formula 301-2

[0186]

[0187] Among them, in equations 301-1 and 301-2,

[0188] Ring A 301 To Ring A 304 Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0189] X 301 It can be O, S, N-[(L 304 ) xb4 -R 304 ]、C(R 304 (R) 305 ) or Si(R 304 (R) 305 ),

[0190] xb22 and xb23 can each be independently 0, 1, or 2.

[0191] L 301 xb1 and R 301 They can all be the same as those described elsewhere here.

[0192] L 302 To L 304They can all independently bind with L 301 The descriptions are the same.

[0193] xb2 to xb4 can all be independently identical to those described in conjunction with xb1, and

[0194] R 302 To R 305 and R 311 To R 314 It can be combined with R 301 The descriptions are the same.

[0195] In one or more embodiments, the first and second bodies may comprise alkaline earth metal complexes. In one or more embodiments, the first and second bodies may comprise Be complexes (e.g., compound H55), Mg complexes, Zn complexes, or combinations thereof.

[0196] In one or more embodiments, the first and second bodies may comprise one or any combination of compounds H1 to H124, 9,10-bis(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthyl-2-yl)anthracene (MADN), 9,10-bis(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-bis-9-carbazolylbenzene (mCP), and 1,3,5-tris(carbazolyl-9-yl)benzene (TCP), but the embodiments of this disclosure are not limited thereto.

[0197]

[0198]

[0199]

[0200]

[0201]

[0202]

[0203]

[0204] Phosphorescent dopants

[0205] Phosphorescent dopants may include at least one transition metal as the center metal.

[0206] Phosphorescent dopants may include monodentate ligands, bidentate ligands, tridentate ligands, tetradentate ligands, pentadentate ligands, hexadentate ligands, or any combination thereof.

[0207] Phosphorescent dopants can be electrically neutral.

[0208] For example, phosphorescent dopants can include organometallic compounds represented by formula 401:

[0209] Formula 401

[0210] M(L 401 ) xc1 (L 402 ) xc2

[0211] Formula 402

[0212]

[0213] In Equations 401 and 402,

[0214] M can be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)).

[0215] L 401 The ligand can be represented by Equation 402, and xc1 can be 1, 2, or 3, wherein when xc1 is 2 or greater, two or more L... 401 They can be the same or different from each other.

[0216] L 402 It can be an organic ligand, and xc2 can be 0, 1, 2, 3, or 4, wherein when xc2 is 2 or greater, two or more L... 402 They can be the same or different from each other.

[0217] X 401 and X 402 They can each be nitrogen or carbon independently.

[0218] Ring A 401 And Ring A 402 Each can be independently C3-C 60 Carbocyclic or C1-C 60 Heterocyclic group,

[0219] T 401 It can be a single bond, -O-, -S-, -C(=O)-, -N(Q)- 411 )-、-C(Q 411 (Q) 412 )-、-C(Q 411 )=C(Q 412 )-、-C(Q 411 = or = C =,

[0220] X 403 and X 404 They can all be independently chemical bonds (e.g., covalent or coordinate bonds), O, S, N (Q) 413 ), B(Q) 413 ), P(Q 413 ), C(Q 413 (Q) 414 ) or Si(Q 413 (Q) 414 ),

[0221] Q 411 To Q 414 Can be combined with Q 11 The descriptions are the same.

[0222] R 401 and R 402 They can all be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R. 10a C1-C 20 Alkyl, unsubstituted or substituted with at least one R 10a C1-C 20 Alkyl group, unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic groups, -Si(Q) 401 (Q) 402 (Q) 403 -N(Q) 401 (Q) 402 -B(Q) 401 (Q) 402 -C(=O)(Q) 401 -S(=O)2(Q) 401 ) or -P(=O)(Q 401 (Q) 402 ),

[0223] Q 401 To Q 403 Can be combined with Q 11 The descriptions are the same.

[0224] xc11 and xc12 can both be independent integers from 0 to 10, and

[0225] In Equation 402, * and *' both represent the binding position with M in Equation 401.

[0226] For example, in equation 402, i)X 401 It can be nitrogen, X402 It can be carbon; or ii)X 401 and X 402 Each of them can be nitrogen.

[0227] For example, when xc1 in equation 401 is 2 or greater, two or more L 401 The two rings A in 401 Optionally via T as a connecting base 402 They are connected to each other, and the two rings A 402 Optionally via T as a connecting base 403 Connected to each other (see compounds PD1 to PD4 and PD7), where T 402 and T 403 Can be combined with T 401 The descriptions are the same.

[0228] In Equation 401, L 402 It can be an organic ligand. For example, L... 402 It may include halogen groups, diketone groups (e.g., acetylacetone groups), carboxylic acid groups (e.g., pyridinecarboxylic acid groups), -C (=O), isonitrile groups, -CN groups, phosphorus-containing groups (e.g., phosphine groups, phosphite groups, etc.) or any combination thereof.

[0229] Phosphorescent dopants may include, for example, one of compounds PD1 to PD25 or any combination thereof:

[0230]

[0231]

[0232] Fluorescent dopants

[0233] In the embodiments, the fluorescent dopant may include an amine-containing compound, a styrene-containing compound, or any combination thereof.

[0234] In one or more embodiments, the fluorescent dopant may include a compound represented by Formula 501:

[0235] Formula 501

[0236]

[0237] In Equation 501,

[0238] Ar 501 L 501 To L 503 R 501 and R 502Each can be independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0239] xd1 to xd3 can each be independently 0, 1, 2, or 3, and

[0240] xd4 can be 1, 2, 3, 4, 5 or 6.

[0241] In the embodiment, Ar in formula 501 501 A condensation cyclic group (e.g., anthracene group, etc.) can be formed by the condensation of three or more monocyclic groups together (e.g., bonded together with each other). (group or pyrene group).

[0242] In one or more embodiments, xd4 in Formula 501 can be 2.

[0243] In one or more embodiments, the fluorescent dopant may include: one of compounds FD1 to FD36; DPVBi; DPAVBi; or any combination thereof:

[0244]

[0245]

[0246]

[0247] Delayed fluorescence materials

[0248] The emission layer may include delayed fluorescence materials.

[0249] In this specification, the delayed fluorescence material may be selected from compounds that can emit delayed fluorescence based on the delayed fluorescence emission mechanism.

[0250] Depending on the type or variety of other materials included in the emission layer, the delayed fluorescence material included in the emission layer can be used as a host or a dopant.

[0251] In this embodiment, the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescence material can be greater than or equal to 0 eV and less than or equal to 0.5 eV. When the difference between the triplet energy level (eV) and the singlet energy level (eV) of the delayed fluorescence material satisfies the above range, an upconversion from the triplet state to the singlet state of the delayed fluorescence material can occur effectively, thus improving the luminous efficiency of the light-emitting device 10.

[0252] For example, delayed fluorescence materials may include: i) including at least one electron donor (e.g., π-electron-rich C3-C 60 Cyclic groups (such as carbazole groups) and at least one electron acceptor (e.g., sulfoxide, cyano, or a nitrogen-containing C1-C group depleted of π electrons). 60 Materials containing cycloids; or ii) C8-C alloys comprising two or more cycloids condensed together while sharing a boron (B). 60 Polycyclic materials.

[0253] Examples of delayed fluorescence materials are at least one of compounds DF1 to DF9:

[0254] quantum dots

[0255] The emission layer may include quantum dots.

[0256] In this specification, quantum dot refers to a crystal of semiconductor compound and may include any suitable material capable of emitting light of various suitable emission wavelengths depending on the size of the crystal.

[0257] The diameter of quantum dots can range from, for example, about 1 nm to about 10 nm.

[0258] Quantum dots can be synthesized using wet chemical processes, metal-organic chemical vapor deposition processes, molecular beam epitaxy processes, and / or any suitable processes similar to them.

[0259] According to the wet chemical process, precursor materials are mixed with organic solvents to grow quantum dot particle crystals. During crystal growth, the organic solvent naturally acts as a dispersant coordinating on the surface of the quantum dot particle crystals and controls the crystal growth. Therefore, the growth of quantum dot particle crystals can be controlled by a process that is easier to perform and relatively less expensive than vapor deposition methods such as metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0260] Quantum dots can include: group III-VI semiconductor compounds; group II-VI semiconductor compounds; group III-V semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; group IV elements or compounds; or any combination thereof.

[0261] Examples of III-VI semiconductor compounds include: binary compounds such as In2S3, GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3, and InTe; ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, InGaS3, and InGaSe3; or any combination thereof.

[0262] Examples of group II-VI semiconductor compounds include: binary compounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and MgZnS; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; or any combination thereof.

[0263] Examples of group III-V semiconductor compounds include: binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and InPSb; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; or any combination thereof. In embodiments, group III-V semiconductor compounds may also include group II elements. Examples of group III-V semiconductor compounds that also include group II elements include InZnP, InGaZnP, InAlZnP, etc.

[0264] Examples of group I-III-VI semiconductor compounds include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, and AgAlO2; or any combination thereof.

[0265] Examples of group IV-VI semiconductor compounds include: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, and SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe, and SnPbSTe; or any combination thereof.

[0266] Examples of Group IV elements or compounds include: single elements, such as Si and Ge; binary compounds, such as SiC and SiGe; or any combination thereof.

[0267] Each element included in a multi-element compound (such as binary, ternary, and quaternary compounds) may exist in the particles at a uniform or non-uniform concentration.

[0268] Furthermore, quantum dots can have a single structure or a core-shell dual structure. In the case of a quantum dot with a single structure, the concentration of each element included in the corresponding quantum dot can be uniform (e.g., substantially uniform). For example, the material included in the core can be different from the material included in the shell.

[0269] The shell of a quantum dot can serve as a protective layer to prevent or reduce the chemical transformation of the nucleus to maintain semiconductor properties, and / or as a charged layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the nucleus and the shell can have a concentration gradient of elements present in the shell that decreases along the direction towards the center.

[0270] Examples of shells for quantum dots include metal or nonmetal oxides, semiconductor compounds, and any combination thereof. Examples of metal or nonmetal oxides include: binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4; or any combination thereof. Examples of semiconductor compounds include: group III-VI semiconductor compounds as described herein; group II-VI semiconductor compounds; group III-V semiconductor compounds; group I-III-VI semiconductor compounds; group IV-VI semiconductor compounds; or any combination thereof. Examples of semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0271] The full width at half maximum (FWHM) of the emission wavelength spectrum of quantum dots can be about 45 nm or smaller, for example, about 40 nm or smaller, for example, about 30 nm or smaller. Furthermore, because light emitted through quantum dots is emitted in all directions (e.g., substantially every direction), a wide viewing angle can be improved.

[0272] In addition, quantum dots can be, for example, spherical, pyramidal, multi-armed and / or cubic nanoparticles, nanotubes, nanowires, nanofibers and / or nanosheets.

[0273] Because the band gap can be tuned by controlling the size of quantum dots, light of various suitable wavelengths can be obtained from the quantum dot emitting layer. Therefore, by using quantum dots of different sizes, light-emitting devices that emit light of various suitable wavelengths can be realized. In embodiments, the size of the quantum dots can be selected to emit red, green, and / or blue light. Furthermore, the size of the quantum dots can be configured to emit white light by combining various suitable colors of light.

[0274] Electron transport region in interlayer 130

[0275] The electron transport region may have: i) a single-layer structure comprising a single layer (e.g., composed of a single layer) comprising a single material (e.g., composed of a single material); ii) a single-layer structure comprising a single layer (e.g., composed of a single layer) comprising multiple different materials (e.g., composed of multiple different materials); or iii) a multi-layer structure comprising multiple layers containing different materials.

[0276] The electron transport region may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0277] For example, the electron transport region may have an electron transport layer / electron injection layer structure or a hole blocking layer / electron transport layer / electron injection layer structure, wherein the layers in each structure are sequentially stacked on the emitter layer.

[0278] In an embodiment, the electron transport region (e.g., a buffer layer, hole blocking layer, electron control layer, or electron transport layer in the electron transport region) may include a nitrogen-containing C1-C containing at least one π-electron-poor material. 60 Metal-free compounds with cyclic groups.

[0279] In one or more embodiments, the electron transport region may include a compound represented by Formula 601:

[0280] Formula 601

[0281] [Ar 601 ] xe11-[(L 601 ) xe1 -R 601 ] xe21 ,

[0282] In Equation 601,

[0283] Ar 601 and L 601 Unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group,

[0284] xe11 can be 1, 2, or 3.

[0285] xe1 can be 0, 1, 2, 3, 4, or 5.

[0286] R 601 It can be either unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic groups, -Si(Q) 601 (Q) 602 (Q) 603 -C(=O)(Q) 601 -S(=O)2(Q) 601 ) or -P(=O)(Q 601 (Q) 602 ),

[0287] Q 601 To Q 603 Can be combined with Q 11 The descriptions are the same.

[0288] xe21 can be 1, 2, 3, 4, or 5, and

[0289] Ar 601 L 601 and R 601 At least one of them can be independently unsubstituted or substituted with at least one R. 10a Nitrogen-containing C1-C with depleted π electrons 60 Ring base.

[0290] In an embodiment, when xe11 in formula 601 is 2 or greater, two or more Ar 601 It can be connected via a single key.

[0291] In one or more embodiments, Ar in Formula 601601 It can be a substituted or unsubstituted anthracene group.

[0292] In one or more embodiments, the electron transport region may include a compound represented by Formula 601-1:

[0293] Formula 601-1

[0294]

[0295] In Equation 601-1,

[0296] X 614 It can be N or C(R) 614 ), X 615 It can be N or C(R) 615 ), and X 616 It can be N or C(R) 616 ), where X 614 To X 616 At least one of them can be N,

[0297] L 611 To L 613 Can be combined with L 601 The descriptions are the same.

[0298] xe611 to xe613 can all be the same as those described in conjunction with xe1.

[0299] R 611 To R 613 It can be combined with R 601 The descriptions are the same, and

[0300] R 614 To R 616 They can all be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 20 Alkyl, C1-C 20 Alkyl group, unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R. 10a C1-C 60 Heterocyclic group.

[0301] For example, xe1 in Equation 601 and xe611 to xe613 in Equation 601-1 can each be 0, 1 or 2 independently.

[0302] The electron transport region may include one or any combination of compounds ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq3, BAlq, TAZ, and NTAZ:

[0303]

[0304]

[0305]

[0306] The thickness of the electron transport region can be approximately to approximately (For example, about to approximately Within the range of ), when the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer can be approximately to approximately (For example, about to approximately The thickness of the electron transport layer can be within the range of approximately 1000 mm, and the thickness of the electron transport layer can be approximately 1000 mm. to approximately (For example, about to approximately Within these ranges, suitable or satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage when the thickness of the hole blocking layer and / or electron transport layer is within these ranges.

[0307] In addition to the materials mentioned above, the electron transport region (e.g., the electron transport layer in the electron transport region) may also include metallic materials.

[0308] Metal-containing materials may include alkali metal complexes, alkaline earth metal complexes, or any combination thereof. The metal ions in alkali metal complexes may be Li, Na, K, Rb, or Cs ions, while the metal ions in alkaline earth metal complexes may be Be, Mg, Ca, Sr, or Ba ions. Ligands coordinated to the metal ions of alkali metal or alkaline earth metal complexes may include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridinium, hydroxyphenanthrene, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthrene, cyclopentadiene, or any combination thereof.

[0309] For example, metallic materials may include Li complexes. Li complexes may include, for example, compounds ET-D1 (LiQ) or ET-D2:

[0310]

[0311] The electron transport region may include an electron injection layer that facilitates electron injection from the second electrode 150. The electron injection layer may be in direct contact (e.g., physical contact) with the second electrode 150.

[0312] The electron injection layer may have: i) a single-layer structure including a single layer (e.g., consisting of a single layer), the single layer including a single type of material (e.g., consisting of a single type of material); ii) a single-layer structure including a single layer (e.g., consisting of a single layer), the single layer including a plurality of different materials (e.g., consisting of a plurality of different materials); or iii) a multi-layer structure including a plurality of layers containing different materials.

[0313] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0314] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0315] The alkali metal-containing compound, the alkaline earth metal-containing compound, and the rare earth metal-containing compound may be oxides, halides (e.g., fluorides, chlorides, bromides, and / or iodides) and / or tellurides of alkali metals, alkaline earth metals, and rare earth metals, or any combination thereof.

[0316] The alkali metal-containing compound may include an alkali metal oxide (such as Li₂O, Cs₂O, and / or K₂O), an alkali metal halide (such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI), or any combination thereof. The alkaline earth metal-containing compound may include an alkaline earth metal oxide, such as BaO, SrO, CaO, Ba x Sr 1-x O (wherein x is a real number satisfying the condition 0<x<1), Ba x Ca 1-xO (where x is a real number satisfying the condition 0<x<1), and the like. The rare earth metal-containing compound may include YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, or any combination thereof. For example, the rare earth metal-containing compound may include a lanthanide metal telluride. Examples of the lanthanide metal telluride include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, and Lu2Te3.

[0317] The alkali metal complex, alkaline earth metal complex, and rare earth metal complex may include: i) one of ions of an alkali metal, an alkaline earth metal, and a rare earth metal; and ii) as a ligand bonded to the metal ion, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0318] The electron injection layer may include the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof as described above (for example, consist of the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof as described above). In an embodiment, the electron injection layer may further include an organic material (for example, a compound represented by Formula 601).

[0319] In an embodiment, the electron injection layer may include: i) an alkali metal-containing compound (for example, an alkali metal halide); or ii) a) an alkali metal-containing compound (for example, an alkali metal halide), and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof (or consist of i) an alkali metal-containing compound (for example, an alkali metal halide); or ii) a) an alkali metal-containing compound (for example, an alkali metal halide), and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof). For example, the electron injection layer may be a KI:Yb co-deposition layer, an RbI:Yb co-deposition layer, or the like.

[0320] When the electron injection layer also includes organic materials, alkali metals, alkaline earth metals, rare earth metals, alkali metal compounds, alkaline earth metal compounds, rare earth metal compounds, alkali metal complexes, alkaline earth metal complexes, rare earth metal complexes, or any combination thereof may be uniformly or non-uniformly dispersed in the matrix including the organic materials.

[0321] The thickness of the electron injection layer can be approximately to approximately (For example, about to approximately Within the range of the above range, when the thickness of the electron injection layer is within the above range, the electron injection layer can have suitable or satisfactory electron injection characteristics without significantly increasing the driving voltage.

[0322] Second electrode 150

[0323] The second electrode 150 is located on the interlayer 130 having such a structure. The second electrode 150 can be a cathode serving as an electron injection electrode, and can be made of metals, alloys, conductive compounds, or any combination thereof, all having low work functions, as materials for forming the second electrode 150.

[0324] The second electrode 150 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, and IZO, or combinations thereof. The second electrode 150 may be a transmission electrode, a semi-transmission electrode, or a reflection electrode.

[0325] The second electrode 150 may have a single-layer structure or a multi-layer structure including two or more layers.

[0326] cap layer

[0327] The first capping layer may be located outside the first electrode 110, and / or the second capping layer may be located outside the second electrode 150. More specifically, the light-emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer layer 130, and the second electrode 150 are stacked sequentially in the order stated above; a structure in which the first electrode 110, the interlayer layer 130, the second electrode 150, and the second capping layer are stacked sequentially in the order stated above; or a structure in which the first capping layer, the first electrode 110, the interlayer layer 130, the second electrode 150, and the second capping layer are stacked sequentially in the order stated above.

[0328] Light generated in the emitting layer of the interlayer layer 130 of the light-emitting device 10 can be extracted outward through the first electrode 110 (which is a semi-transparent electrode or a transmissive electrode) and the first capping layer, or light generated in the emitting layer of the interlayer layer 130 of the light-emitting device 10 can be extracted outward through the second electrode 150 (which is a semi-transparent electrode or a transmissive electrode) and the second capping layer.

[0329] The first and second capping layers can improve the external luminous efficiency based on the principle of constructive interference. Therefore, the light extraction efficiency of the light-emitting device 10 is improved, thereby enhancing the luminous efficiency of the light-emitting device 10.

[0330] Each of the first and second capping layers may include a material having a refractive index equal to or greater than 1.6 (at a wavelength of 589 nm).

[0331] The first capping layer and the second capping layer can each be independently an organic capping layer including organic materials, an inorganic capping layer including inorganic materials, or a composite capping layer including both organic and inorganic materials.

[0332] At least one selected from the first capping layer and the second capping layer may each independently comprise a carbocyclic compound, a heterocyclic compound, an amino-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalene phthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, heterocyclic compound, and amino-containing compound may optionally be substituted with substituents comprising O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In embodiments, at least one of the first capping layer and the second capping layer may each independently comprise an amino-containing compound.

[0333] In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently comprise a compound represented by formula 201, a compound represented by formula 202, or any combination thereof.

[0334] In one or more embodiments, at least one of the first capping layer and the second capping layer may each independently comprise a compound selected from compounds HT28 to HT33, compounds CP1 to CP6, and β-NPB, or any combination thereof, but the embodiments of this disclosure are not limited thereto:

[0335]

[0336]

[0337] electronic devices

[0338] Light-emitting devices can be included in a variety of suitable electronic devices. For example, electronic devices that include light-emitting devices can be light-emitting devices, authentication devices, etc.

[0339] In addition to the light-emitting device, the electronic device (e.g., the light-emitting device) may also include: i) a color filter; ii) a color conversion layer; or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer may be located in at least one direction of travel of the light emitted from the light-emitting device. For example, the light emitted from the light-emitting device may be blue light. The light-emitting device may be the same as described above. In embodiments, the color conversion layer may include quantum dots. Quantum dots may be the same as described elsewhere herein.

[0340] An electronic device may include a first substrate. The first substrate may include multiple sub-pixel regions, a color filter may include multiple color filter regions corresponding to the multiple sub-pixel regions, and a color conversion layer may include multiple color conversion regions corresponding to the multiple sub-pixel regions.

[0341] A pixel-defining film can be located between multiple sub-pixel regions to define each sub-pixel region.

[0342] The color filter may also include multiple color filter areas and a light-blocking pattern located between the multiple color filter areas, and the color conversion layer may include multiple color conversion areas and a light-blocking pattern located between the multiple color conversion areas.

[0343] Multiple color filter regions (or multiple color conversion regions) may include a first region emitting a first color of light, a second region emitting a second color of light, and / or a third region emitting a third color of light, and the first color of light, the second color of light, and / or the third color of light may have different maximum emission wavelengths from each other. For example, the first color of light may be red light, the second color of light may be green light, and the third color of light may be blue light. For example, the multiple color filter regions (or multiple color conversion regions) may include quantum dots. More specifically, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. The quantum dots may be the same as those described elsewhere herein. The first region, the second region, and / or the third region may all include scatterers.

[0344] In this embodiment, the light-emitting device can emit first light, a first region can absorb the first light to emit a first first color light, a second region can absorb the first light to emit a second first color light, and a third region can absorb the first light to emit a third first color light. In this embodiment, the first first color light, the second first color light, and the third first color light can have different maximum emission wavelengths from each other. More specifically, the first light can be blue light, the first first color light can be red light, the second first color light can be green light, and the third first color light can be blue light.

[0345] In addition to the light-emitting devices described above, electronic devices may also include thin-film transistors. A thin-film transistor may include a source electrode, a drain electrode, and an active layer, wherein either the source electrode or the drain electrode may be electrically coupled to either the first electrode or the second electrode of the light-emitting device.

[0346] Thin-film transistors may include gate electrodes, gate insulating films, etc.

[0347] The active layer can include crystalline silicon, amorphous silicon, organic semiconductors, oxide semiconductors, etc.

[0348] Electronic devices may also include a sealing portion for sealing a light-emitting device. The sealing portion may be positioned between a color filter and / or a color conversion layer and the light-emitting device. The sealing portion allows light from the light-emitting device to be extracted to the outside while simultaneously (e.g., concurrently) preventing or reducing the penetration of ambient air and / or moisture into the light-emitting device. The sealing portion may be a sealing substrate comprising a transparent glass substrate and / or a plastic substrate. The sealing portion may be a thin-film encapsulation layer comprising at least one organic layer and an inorganic layer. When the sealing portion is a thin-film encapsulation layer, the electronic device may be flexible.

[0349] Depending on the purpose of the electronic device, various suitable functional layers may be additionally located on the sealed portion, in addition to color filters and / or color conversion layers. Functional layers may include touchscreen layers, polarization layers, etc. The touchscreen layer may be a pressure-sensitive touchscreen layer, a capacitive touchscreen layer, and / or an infrared touchscreen layer. Authentication devices may be, for example, biometric authentication devices that authenticate individuals using biometric information from a living organism (e.g., fingertip, pupil, etc.).

[0350] In addition to light-emitting devices, authentication equipment may also include biometric information collectors.

[0351] Electronic devices can be applied to a variety of suitable displays, light sources, lighting, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, video game consoles, medical instruments (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasound diagnostic devices and / or endoscopic displays), fish finders, various suitable measuring instruments, meters (e.g., instruments for vehicles, aircraft and / or ships), projectors, etc.

[0352] Figure 2 and Figure 3 Description

[0353] Figure 2 This is a cross-sectional view showing a light-emitting device according to an embodiment of the present disclosure.

[0354] Figure 2The light-emitting device includes a substrate 100, a thin-film transistor (TFT), a light-emitting device, and a package portion 300 for sealing the light-emitting device.

[0355] The substrate 100 may be a flexible substrate, a glass substrate, and / or a metal substrate. A buffer layer 210 may be located on the substrate 100. The buffer layer 210 may prevent or reduce the penetration of impurities through the substrate 100 and may provide a flat surface on the substrate 100.

[0356] The TFT can be located on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0357] The active layer 220 may include inorganic semiconductors (such as monocrystalline silicon and / or polycrystalline silicon), organic semiconductors and / or oxide semiconductors, and may include source regions, drain regions and channel regions.

[0358] A gate insulating film 230 for insulating the active layer 220 from the gate electrode 240 may be located on the active layer 220, and the gate electrode 240 may be located on the gate insulating film 230.

[0359] Interlayer insulating film 250 may be located on gate electrode 240. Interlayer insulating film 250 may be located between gate electrode 240 and source electrode 260 to insulate gate electrode 240 from source electrode 260, and between gate electrode 240 and drain electrode 270 to insulate gate electrode 240 from drain electrode 270.

[0360] The source electrode 260 and the drain electrode 270 may be located on the interlayer insulating film 250. The interlayer insulating film 250 and the gate insulating film 230 may expose the source and drain regions of the active layer 220, and the source electrode 260 and the drain electrode 270 may contact (e.g., physically contact) the exposed portions of the source and drain regions of the active layer 220.

[0361] The TFT can be electrically bonded to the light-emitting device to drive the light-emitting device, and can be covered by a passivation layer 280. The passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof. The light-emitting device may be located on the passivation layer 280. The light-emitting device may include a first electrode 110, an interlayer layer 130, and a second electrode 150.

[0362] The first electrode 110 may be located on the passivation layer 280. The passivation layer 280 may expose a portion of the drain electrode 270 without completely covering the drain electrode 270, and the first electrode 110 may be bonded to the exposed portion of the drain electrode 270.

[0363] A pixel defining layer 290 comprising insulating material may be located on the first electrode 110. The pixel defining layer 290 may expose a region of the first electrode 110, and an interlayer layer 130 may be located in the exposed region of the first electrode 110. The pixel defining layer 290 may be a polyimide-based organic film and / or a polyacrylic acid-based organic film. In one or more embodiments, at least some layers of the interlayer layer 130 may extend over the upper portion of the pixel defining layer 290 to form a common layer.

[0364] The second electrode 150 may be located on the interlayer 130, and the capping layer 170 may additionally be located on the second electrode 150. The capping layer 170 may cover the second electrode 150.

[0365] The encapsulation portion 300 may be located on the cap layer 170. The encapsulation portion 300 may be located on the light-emitting device to protect it from moisture and / or oxygen. The encapsulation portion 300 may include: an inorganic film, including silicon nitride (SiN). x ), silicon dioxide (SiO) x Indium tin oxide, indium zinc oxide, or any combination thereof; organic membranes, including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resins (e.g., polymethyl methacrylate, polyacrylic resins, etc.), epoxy resins (e.g., aliphatic glycidyl ether (AGE), etc.) or any combination thereof; or combinations of inorganic and organic membranes.

[0366] Figure 3 A cross-sectional view of a light-emitting device according to another embodiment of the present disclosure is shown.

[0367] In addition to the light-blocking pattern 500 and the functional area 400 being located on the package portion 300, Figure 3 Light-emitting devices and Figure 2 The light-emitting devices are basically the same. Functional area 400 may include: i) a color filter area; ii) a color conversion area; or iii) a combination of a color filter area and a color conversion area. In the embodiment, it includes... Figure 3 The light-emitting devices in the light-emitting equipment can be series-connected light-emitting devices.

[0368] Manufacturing method

[0369] The corresponding layer, including the hole transport region, the emission layer, and the corresponding layer, including the electron transport region, can be formed in a certain area by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing, and laser-induced thermal imaging.

[0370] When forming corresponding layers including hole transport regions, emitter layers, and electron transport regions by vacuum deposition, the deposition conditions can include, for example, a deposition temperature in the range of about 100°C to about 500°C, and a deposition temperature in the range of about 10°C, taking into account the materials to be included in the layers to be formed and the structure of the layers to be formed. -8 To about 10 -3 The vacuum level within the range of Tor and in approximately to approximately The deposition rate within the range.

[0371] When spin coating is used to form a corresponding layer including a hole transport region, an emitter layer, and a corresponding layer including an electron transport region, the coating conditions may include, for example, a coating speed in the range of about 2,000 rpm to about 5,000 rpm and a heat treatment temperature in the range of about 80°C to about 200°C, taking into account the material to be included in the layer to be formed and the structure of the layer to be formed.

[0372] At least some general definitions of substituents

[0373] As used here, the term "C3-C" 60 "Carbocyclic group" refers to a cyclic group consisting only of carbon and having three to sixty carbon atoms, such as the term "C1-C" used here. 60 A "heterocyclic group" refers to a cyclic group that has 1 to 60 carbon atoms in addition to a heteroatom. (C3-C) 60 Carbocyclic groups and C1-C 60 Heterocyclic groups can be monocyclic groups consisting of a single ring or polycyclic groups in which two or more rings are condensed together (e.g., bonded together). For example, C1-C 60 The number of cyclic atoms in a heterocyclic group can range from 3 to 61.

[0374] The term "cycloid" as used here can include C3-C 60 Carbocyclic groups and C1-C 60 Heterocyclic group.

[0375] As used here, the term "π-electron-rich C3-C" 60 "Cyclic group" refers to a cyclic group having 3 to 60 carbon atoms and not including *-N=*' as the cyclic moiety, such as the term "π-electron-poor nitrogen-containing C1-C" used here. 60 "Cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms and including *-N=*' as the cyclic part.

[0376] For example,

[0377] C3-C 60The carbocyclic group can be: i) a group T1; or ii) a condensed cyclic group in which two or more groups T1 are condensed together (e.g., bonded together) (e.g., cyclopentadienyl group, adamantyl group, norbornel group, phenyl group, cyclopentadienyl group, naphthyl group, chamomile cyclic group, indane group, acenaphthene group, phenatene group, phenanthrene group, anthracene group, fluoranthene group, benzo[9,10]phenanthrene group, pyrene group, Groups, perylene groups, pentanene groups, heptaphenyl groups, tetraphenyl groups, fentanyl groups, hexaphenyl groups, pentaphenyl groups, rutin groups, fentanyl groups, ovoid groups, indole groups, fluorene groups, spirodifluorene groups, benzo[a]fluorene groups, indole[a]phenanthrene groups, or indole[a]anthracene groups),

[0378] C1-C 60 The heterocyclic group can be: i) group T2; ii) a condensed cyclic group in which two or more groups T2 are condensed together (e.g., linked together); or iii) a condensed cyclic group in which at least one group T2 and at least one group T1 are condensed together (e.g., pyrrole group, thiophene group, furan group, indole group, benzoindole group, naphthoindole group, isoindole group, benzoisoindole group, naphthoisoindole group, benzothiophene group). Benzothiophene group, benzofuran group, carbazole group, dibenzothiophene group, dibenzothiophene group, dibenzofuran group, indole-carbazole group, indole-carbazole group, benzofuran-carbazole group, benzothiophene-carbazole group, benzothiophene-carbazole group, benzoindole-carbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthothiophene group, benzonaphthothiophene group, benzofuran-dibenzofuran group, benzofuran Benzo[2,3-benzothiophene], benzo[2,3-benzothiophene], pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiaazole group, isothiazole group, thiadiazole group, benzo[2,3-benzopyrazole], benzimidazole group, benzo[2,3-benzoxazole], benzimidazole group, benzo[2,3-benzoxazole], benzo[2,3-benzoxazole], benzo[2,3-benzoxazole], benzo[2,3-benzoxazole], pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group Benzoquinoline group, benzoisoquinoline group, quinoxaloline group, benzoquinoxaloline group, quinazoline group, benzoquinazoline group, phenanthrene group, cenline group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, azadibenzofuran group, etc.

[0379] C3-C rich in π electrons 60The cyclic group can be: i) group T1; ii) a condensed cyclic group in which two or more groups T1 are condensed together (e.g., linked together); iii) group T3; iv) a condensed cyclic group in which two or more groups T3 are condensed together (e.g., linked together); or v) a condensed cyclic group in which at least one group T3 and at least one group T1 are condensed together (e.g., linked together) (e.g., C3-C). 60 Carbocyclic groups, pyrrole groups, thiophene groups, furan groups, indole groups, benzoindole groups, naphthoindole groups, isoindole groups, benzoisoindole groups, naphthoisoindole groups, benzothiophene groups, benzofuran groups, carbazole groups, dibenzothiophene groups, dibenzofuran groups, indole-carbazole groups, indole-carbazole groups, benzofuran-carbazole groups, benzothiophene-carbazole groups, benzothiophene-carbazole groups, benzoindole-carbazole groups, benzocarbazole groups, benzonaphthofuran groups, benzonaphthophene groups, benzonaphthothiophene groups, benzofuran-dibenzofuran groups, benzofuran-dibenzothiophene groups, benzothiophene-dibenzothiophene groups, etc.

[0380] Nitrogen-containing C1-C cells with depleted π electrons 60 The cyclic group can be: i) group T4; ii) a condensed cyclic group in which two or more groups T4 are condensed together (e.g., linked together); iii) a condensed cyclic group in which at least one group T4 and at least one group T1 are condensed together (e.g., linked together); iv) a condensed cyclic group in which at least one group T4 and at least one group T3 are condensed together (e.g., linked together); or v) a condensed cyclic group in which at least one group T4, at least one group T1, and at least one group T3 are condensed together (e.g., linked together) (e.g., pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiaazole group, thiabhi ... The following groups are listed: azole group, benzopyrazole group, benzimidazole group, benzoxazole group, benziisoxazole group, benzothiazole group, benziisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthrene group, cinnamyl group, phthalazine group, naphthidine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzothiophene group, azadibenzothiophene group, azadibenzofuran group, etc.

[0381] Group T1 can be a cyclopropane group, cyclobutane group, cyclopentane group, cyclohexane group, cycloheptane group, cyclooctane group, cyclobutene group, cyclopentene group, cyclopentadiene group, cyclohexene group, cyclohexadiene group, cycloheptene group, adamantane group, norbornane (or bicyclo[2.2.1]heptane) group, norbornene group, bicyclo[1.1.1]pentane group, bicyclo[2.1.1]hexane group, bicyclo[2.2.2]octane group, or phenyl group.

[0382] Group T2 can be a furan group, thiophene group, 1H-pyrrole group, thiorrole group, borocyclopentadienyl group, 2H-pyrrole group, 3H-pyrrole group, imidazole group, pyrazole group, triazole group, tetraazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, azathirrole group, azaboracyclopentadienyl group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, or tetraazine group.

[0383] Group T3 can be a furan group, a thiophene group, a 1H-pyrrole group, a thiophene group, or a borocyclopentadiene group, and

[0384] The group T4 can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetraazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathirrole group, an azaboranecyclopentadiene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetraazine group.

[0385] As used here, the terms "cyclogroup" and "C3-C" are similar. 60 "Carbocyclic group", "C1-C" 60 Heterocyclic groups, π-electron-rich C3-C 60 "Cyclonal group" or "π-electron-poor nitrogen-containing C1-C" 60 "Cycloyl group" refers to a group whose structure, according to the formula associated with the terminology used, is condensed with any suitable cycloyl group, monovalent group, or polyvalent group (e.g., divalent group, trivalent group, tetravalent group, etc.). For example, "phenyl group" can be a benzo[a] group, phenyl group, phenylene group, etc., which can be readily understood by a person skilled in the art from the structure of a formula including "phenyl group".

[0386] Unit price C3-C 60 Carbocyclic groups and monovalent C1-C 60 Examples of heterocyclic groups include C3-C 10 cycloalkyl, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkenyl, C1-C 10 Heterocyclic alkenyl, C6-C 60Aryl, C1-C 60 Heteroaryl, monovalent non-aromatic condensed polycyclic and monovalent non-aromatic condensed heterocyclic, and divalent C3-C 60 Carbocyclic groups and divalent C1-C 60 Examples of heterocyclic groups include C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkyl, C3-C 10 Cycloalkylene, C1-C 10 Heterocyclic alkenyl, C6-C 60 aryl, C1-C 60 Hybrid aryl, divalent non-aromatic condensed polycyclic group and divalent non-aromatic condensed heterocyclic group.

[0387] As used here, the term "C1-C" 60 "Alkyl" refers to a straight-chain or branched monovalent group of an aliphatic saturated hydrocarbon having 1 to 60 carbon atoms, examples of which include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodel, sec-decyl, and tert-decyl. As used herein, the term "C1-C" is used in conjunction with other alkyl groups. 60 "alkylene" refers to C1-C 60 Alkyl groups have essentially the same divalent structure.

[0388] As used here, the term "C2-C" 60 "Alkenyl" refers to the group formed at C2-C. 60 A monovalent hydrocarbon group having at least one carbon-carbon double bond at the main chain (e.g., in the middle) or at the end, examples of which include vinyl, propenyl, and butenyl groups. As used herein, the term "C2-C" is used... 60 "Alkenyl" refers to C2-C 60 Alkenes are divalent groups with essentially the same structure.

[0389] As used here, the term "C2-C" 60 "Alkyne group" refers to the group at C2-C 60 A monovalent hydrocarbon group having at least one carbon-carbon triple bond at the main chain (e.g., in the middle) or end (e.g., at the tip) of an alkyl group, examples of which include ethynyl and propynyl. As used herein, the term "C2-C" is used... 60 "Immyneyl" refers to C2-C 60 Alkynes are divalent groups with essentially the same structure.

[0390] As used here, the term "C1-C" 60 "Alkoxy" refers to the compound formed by -OA101 (where A) 101 It is C1-C 60 Alkyl groups are monovalent groups, examples of which include methoxy, ethoxy, and isopropoxy.

[0391] As used here, the term "C3-C" 10 "Cycloalkyl" refers to a monovalent saturated hydrocarbon cycloalloy having 3 to 10 carbon atoms, examples of which include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornelyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl, and bicyclo[2.2.2]octyl. The term "C3-C" as used herein is also relevant. 10 "Cycloalkylene" refers to C3-C 10 Cycloalkyl groups have divalent groups with essentially the same structure.

[0392] As used here, the term "C1-C" 10 "Heterocyclic alkyl" refers to a monovalent cyclic group having 1 to 10 carbon atoms, comprising at least one heteroatom as a cyclic atom in addition to a carbon atom. Examples include 1,2,3,4-oxatriazolyl, tetrahydrofuranyl, and tetrahydrothiophenyl. The term "C1-C" is used herein. 10 "Heterocyclic alkyl" refers to C1-C 10 Heterocyclic alkyl groups have divalent groups with essentially the same structure.

[0393] As used here, the term "C3-C" 10 "Cycloalkenyl" refers to a monovalent cycloalkenyl group having three to ten carbon atoms and at least one carbon-carbon double bond in its ring and lacking aromaticity (e.g., not aromatic), examples of which include cyclopentenyl, cyclohexenyl, and cycloheptenyl. The term "C3-C" is used herein. 10 "Biopylene" refers to C3-C 10 Cycloalkenyl groups are divalent groups with essentially the same structure.

[0394] As used here, the term "C1-C" 10 "Heterocyclic alkenyl" refers to a monovalent cyclic group whose ring structure contains at least one heteroatom other than one to ten carbon atoms as cyclic atoms, and at least one double bond. C1-C 10 Examples of heterocyclic alkenyl groups include 4,5-dihydro-1,2,3,4-oxarizolyl, 2,3-dihydrofuranyl, and 2,3-dihydrothiopheneyl. As used herein, the term "C1-C..." 10 "Heterocyclic alkenyl" refers to C1-C 10 Heterocyclic alkenyl groups are divalent groups with essentially the same structure.

[0395] As used here, the term "C6-C" 60"Aryl" refers to a monovalent group having a carbocyclic aromatic system comprising six to sixty carbon atoms, and as used herein, "C6-C" 60 "Aryl" refers to a divalent group in a carbocyclic aromatic system having six to sixty carbon atoms. (C6-C) 60 Examples of aryl groups include fluorenyl, phenyl, cyclopentadienyl, naphthyl, chamomilecycloyl, indoleyl, acenaphthel, phenanthyl, anthracene, fluoranthracene, benzo[9,10]phenanthyl, pyrene, alkyl, peryl, pentylenyl, hepta-alkenyl, tetraphenyl, framylinyl, hexaphenyl, pentaphenyl, rubidyl, benzoyl, and ovoxyl. When C6-C 60 Aryl and C6-C 60 When each of the aryl groups comprises two or more rings, the two or more rings may be condensed together (e.g., joined together).

[0396] As used here, the term "C1-C" 60 "Heteroaryl" refers to a monovalent group having a heterocyclic aromatic system having at least one heteroatom other than a carbon atom as a cyclizing atom and 1 to 60 carbon atoms. The term "C1-C" is used herein. 60 "Hypo-heteroaryl" refers to a divalent group having a heterocyclic aromatic system, which has at least one heteroatom other than a carbon atom that serves as a cyclizing atom, and 1 to 60 carbon atoms. C1-C 60 Examples of heteroaryl groups include carbazolyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolinyl, benzo[a]quinolinyl, isoquinolinyl, benzo[a]isoquinolinyl, quinoxalinyl, benzo[a]quinoxalinyl, quinazolinyl, benzo[a]quinazolinyl, cenolinyl, phenanthrolinel, phthalazinyl, and naphthidyl. When C1-C 60 heteroaryl and C1-C 60 When each heteroaryl group comprises two or more rings, the two or more rings may condense together (e.g., bind together).

[0397] As used herein, the term "monovalent nonaromatic condensation polycyclic group" refers to a monovalent group having two or more rings condensed together (e.g., bonded together), with only carbon atoms (e.g., having 8 to 60 carbon atoms) as cyclic atoms, and lacking aromaticity (e.g., not aromatic when considered as a whole) throughout its molecular structure. Examples of monovalent nonaromatic condensation polycyclic groups include indenyl, fluorenyl, spirodifluorenyl, benzo[a]fluorenyl, indeno[a]phenanthryl, and indeno[a]anthrayl. As used herein, the term "divalent nonaromatic condensation polycyclic group" refers to a divalent group having substantially the same structure as a monovalent nonaromatic condensation polycyclic group.

[0398] As used herein, the term "monovalent non-aromatic condensed heteropolycyclic group" refers to a monovalent group having two or more rings condensed together (e.g., bonded together), at least one heteroatom other than carbon atoms (e.g., having 1 to 60 carbon atoms) as cyclic atoms, and having no aromaticity (e.g., not aromatic when considered as a whole) in its entire molecular structure. Examples of monovalent non-aromatic condensed heterocyclic groups include pyrrole, thiophene, furanyl, indole, benzoindole, naphthoindole, isoindole, benzoisoindole, naphthoisoindole, benzothiophene, benzofuranyl, carbazole, dibenzothiophene, dibenzofuranyl, azacarbazole, azafluorenyl, azadibenzothiophene, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, isothiazolyl, oxadiazolyl, thiazolyl. Benzopyrazolyl, benzoimidazolyl, benzooxazolyl, benzothiazolyl, benzooxadiazolyl, benzothiadiazolyl, imidazopyridyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, indolecarbazoleyl, indolocarbazoleyl, benzofuranocarbazoleyl, benzothiophenocarbazoleyl, benzothiophenocarbazoleyl, benzoindolocarbazoleyl, benzocarbazoleyl, benzonaphthofuranyl, benzonaphthothiophenyl, benzonaphthothiophenyl, benzofuranodibenzofuranyl, benzofuranodibenzothiophenyl, and benzothiophenodibenzothiophenyl. As used herein, the term "divalent nonaromatic condensation heteropolycyclic group" refers to a divalent group having substantially the same structure as a monovalent nonaromatic condensation heteropolycyclic group.

[0399] As used here, the term "C6-C" 60 "Aryloxy group" represents -OA 102 (where A) 102 It is C6-C 60 Aryl), and as used herein, the term "C6-C" 60 "Arylthio" indicates -SA 103 (where A) 103 It is C6-C 60 Aryl).

[0400] As the term "R" is used here 10a "refer to:

[0401] Deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro;

[0402] None of them were substituted or were substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, or C3-C. 60 carbonyl group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60Arylthioyl, -Si(Q) 11 (Q) 12 (Q) 13 -N(Q) 11 (Q) 12 -B(Q) 11 (Q) 12 -C(=O)(Q) 11 -S(=O)2(Q) 11 -P(=O)(Q) 11 (Q) 12 C1-C or any combination thereof 60 Alkyl, C2-C 60 alkenyl, C2-C 60 Alkyne group or C1-C 60 Alkoxy;

[0403] None of them were substituted or were substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 alkenyl, C2-C 60 alkynyl group, C1-C 60 Alkoxy, C3-C 60 carbonyl group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthioyl, -Si(Q) 21 (Q) 22 (Q) 23 -N(Q) 21 (Q) 22 -B(Q) 21 (Q) 22 -C(=O)(Q) 21 -S(=O)2(Q) 21 -P(=O)(Q) 21 (Q) 22 C3-C or any combination thereof 60 carbonyl group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy or C6-C 60 aryl thiols; or

[0404] -Si(Q 31 (Q) 32 (Q) 33 -N(Q) 31 (Q) 32 -B(Q) 31 (Q) 32 -C(=O)(Q) 31-S(=O)2(Q) 31 ) or -P(=O)(Q 31 (Q) 32 ).

[0405] In this specification, Q 11 To Q 13 Q 21 To Q 23 and Q 31 To Q 33 Each of these can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkyne group; C1-C 60 Alkyl groups; or neither group is substituted or is substituted with deuterium, -F, cyano, or C1-C. 60 Alkyl, C1-C 60 C3-C of alkoxy, phenyl, biphenyl, or any combination thereof 60 Carbocyclic or C1-C 60 Heterocyclic group.

[0406] As used herein, the term "heteroatom" refers to any atom other than a carbon atom. Examples of heteroatoms include O, S, N, P, Si, B, Ge, Se, or any combination thereof.

[0407] As used herein, the term "Ph" refers to phenyl, "Me" refers to methyl, "Et" refers to ethyl, and "tert-Bu" or "Bu" refers to... t "Refers to tert-butyl, as the term "OMe" used here refers to methyl methacrylate (MMA).

[0408] The term "biphenyl" as used here refers to "a phenyl group that has a substituted phenyl group." In other words, "biphenyl" is a phenyl group with a C6-C bond. 60 Aryl groups are substituted phenyl groups.

[0409] The term "terphenyl" as used here refers to "a phenyl group substituted with biphenyl groups." In other words, "terphenyl" is a phenyl group with C6-C substitution. 60 C6-C of aryl 60 Aryl groups are substituted phenyl groups.

[0410] Unless otherwise defined, * and *' as used here refer to the binding site with the adjacent atom in the corresponding expression.

[0411] The compounds and light-emitting devices according to the embodiments will be described in more detail below with reference to examples.

[0412] Example

[0413] Manufacturing of light-emitting devices

[0414] Comparison Example 1

[0415] Will include ITO The glass substrate (anodide) was cut to a size of 50mm × 50mm × 0.7mm, ultrasonicated for 5 minutes each with isopropanol and pure water, and then cleaned by exposure to ultraviolet light and ozone for 30 minutes. The glass substrate was then fed into a vacuum deposition apparatus.

[0416] HAT-CN was vacuum deposited on a glass substrate to form a structure with... A hole injection layer of a certain thickness is formed. Next, NPB, a hole transport compound, is vacuum-deposited on the hole injection layer to form a layer with… A hole transport layer of a certain thickness.

[0417] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0418] Compound host-1 (host) and compound 100 (doper) were co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0419] Compound host-2 (host) and compound 100 (dopant) were co-deposited on the first emitter layer in a weight ratio of 97:3 to form a structure with... The second emission layer has a thickness of [missing information].

[0420] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0421] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0422] Yb was vacuum deposited onto the electron transport layer. The thickness is increased, and AgMg is continuously vacuum deposited on it to form a layer with... A cathode of a certain thickness is formed, and CPL is vacuum deposited on the cathode to form a cathode with a thickness of [missing information]. A thick capping layer is applied to complete the fabrication of the light-emitting device.

[0423] Example 1

[0424] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) during the formation of the second emitter layer to form a structure with... The light-emitting device is fabricated in substantially the same manner as in Comparative Example 1, except for the second emitting layer of thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds).

[0425] Comparison Example 2

[0426] Will include ITO The glass substrate (anodide) was cut to a size of 50mm × 50mm × 0.7mm, ultrasonicated for 5 minutes each with isopropanol and pure water, and then cleaned by exposure to ultraviolet light and ozone for 30 minutes. The glass substrate was then fed into a vacuum deposition apparatus.

[0427] HAT-CN was vacuum deposited on a glass substrate to form a structure with... A hole injection layer of a certain thickness is formed. Next, NPB, a hole transport compound, is vacuum-deposited on the hole injection layer to form a layer with… A hole transport layer of a certain thickness.

[0428] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0429] Compound host-1 (host) and compound 100 (doper) were co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0430] Compound host-2 (host) and compound 100 (dopant) were co-deposited on the first emitter layer in a weight ratio of 97:3 to form a structure with... A second emission layer of varying thickness is formed, thereby creating an emission layer stack (I) comprising a first emission layer and a second emission layer.

[0431] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0432] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0433] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A first n-charge generating layer of thickness is formed, and HAT-CN is vacuum deposited on the first n-charge generating layer to form a structure with... The first p-charge generation layer of thickness.

[0434] NPB, a hole transport compound, is vacuum deposited on the first p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0435] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0436] Compound host-1 (host) and compound 100 (doper) were co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0437] Compound host-2 (host) and compound 100 (dopant) were co-deposited on the first emitter layer in a weight ratio of 97:3 to form a structure with... A second emission layer of varying thickness is formed, thereby creating an emission layer stack (II) comprising a first emission layer and a second emission layer.

[0438] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0439] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0440] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A second n-charge generating layer of thickness is formed, and HAT-CN is vacuum deposited on the second n-charge generating layer to form a structure with... The second p-charge generation layer has a thickness of [missing information].

[0441] NPB, a hole transport compound, is vacuum deposited on the second p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0442] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0443] Compound host-1 (host) and compound 100 (doper) were co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0444] Compound host-2 (host) and compound 100 (dopant) were co-deposited on the first emitter layer in a weight ratio of 97:3 to form a structure with... A second emission layer of varying thickness is formed, thereby creating an emission layer stack (III) comprising a first emission layer and a second emission layer.

[0445] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0446] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0447] Yb was vacuum deposited onto the electron transport layer. The thickness is such that AgMg is continuously vacuum-deposited on it to form a layer with... A cathode of a certain thickness is formed, and CPL is vacuum deposited on the cathode to form a cathode with a thickness of [missing information]. The thickness of the capping layer allows for the fabrication of light-emitting devices of various types or categories, including a series of three emitting layer stacks.

[0448] Example 2

[0449] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) during the formation of the second emitter layer stack (I) to form a structure with... The light-emitting device is fabricated in substantially the same manner as in Comparative Example 2, except for the second emitting layer of thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds).

[0450] Example 3

[0451] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) into each of the second emitter layers of emitter stack (I) and emitter stack (II) during the formation of emitter stack (I), compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) are deposited. Apart from the thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds), the light-emitting device is manufactured in a manner substantially the same as that in Comparative Example 2.

[0452] Example 4

[0453] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) into each of the second emitter layers of emitter stack (I) and emitter stack (III) during the formation of emitter stack (I), compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) are deposited. Apart from the thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds), the light-emitting device is manufactured in a manner substantially the same as that in Comparative Example 2.

[0454] Example 5

[0455] Except when forming the second emitter layer of emitter stack (I), the second emitter layer of emitter stack (II), and the second emitter layer of emitter stack (III), compound host-2 (host), compound 100 (doper) and TPM-TAZ (electron transport compound) are co-deposited to Apart from the thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds), the light-emitting device is manufactured in a manner substantially the same as that in Comparative Example 2.

[0456] Compare Example 3

[0457] Will include ITO The glass substrate (anodide) was cut to a size of 50mm × 50mm × 0.7mm, ultrasonicated for 5 minutes each with isopropanol and pure water, and then cleaned by exposure to ultraviolet light and ozone for 30 minutes. The glass substrate was then fed into a vacuum deposition apparatus.

[0458] HAT-CN was vacuum deposited on a glass substrate to form a structure with... A hole injection layer of a certain thickness is formed. Next, NPB, a hole transport compound, is vacuum-deposited on the hole injection layer to form a layer with… A hole transport layer of a certain thickness.

[0459] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0460] Compound host-1 (host) and compound 100 (doper) were co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0461] Compound host-2 (host) and compound 100 (dopant) were co-deposited on the first emitter layer in a weight ratio of 97:3 to form a structure with... A second emission layer of varying thickness is formed, thereby creating an emission layer stack (I) comprising a first emission layer and a second emission layer.

[0462] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0463] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0464] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A first n-charge generating layer of thickness is formed, and HAT-CN is vacuum deposited on the first n-charge generating layer to form a structure with... The first p-charge generation layer of thickness.

[0465] NPB, a hole transport compound, is vacuum deposited on the first p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0466] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0467] Compound host-1 (host) and compound 100 (doper) were co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0468] Compound host-2 (host) and compound 100 (dopant) were co-deposited on the first emitter layer in a weight ratio of 97:3 to form a structure with... A second emission layer of varying thickness is formed, thereby creating an emission layer stack (II) comprising a first emission layer and a second emission layer.

[0469] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0470] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0471] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A second n-charge generating layer of thickness is formed, and HAT-CN is vacuum deposited on the second n-charge generating layer to form a structure with... The second p-charge generation layer has a thickness of [missing information].

[0472] NPB, a hole transport compound, is vacuum deposited on the second p-charge generation layer to form a layer with... A hole transport layer of a certain thickness.

[0473] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0474] Compound host-1 (host) and compound 100 (doper) were co-deposited on the electron blocking layer in a weight ratio of 97:3 to form a structure with... The first emission layer has a thickness of [missing information].

[0475] Compound host-2 (host) and compound 100 (dopant) were co-deposited on the first emitter layer in a weight ratio of 97:3 to form a structure with... A second emission layer of varying thickness is formed, thereby creating an emission layer stack (III) comprising a first emission layer and a second emission layer.

[0476] T2T is vacuum deposited on the second emitter layer to form a layer with A hole-blocking layer of a certain thickness.

[0477] TPM-TAZ and LiQ were co-deposited on the hole-blocking layer at a weight ratio of 5:5 to form a structure with... An electron transport layer of a certain thickness.

[0478] BCP and Li were co-deposited on the electron transport layer in a 5:5 weight ratio to form a layer with… A third n-charge generating layer of a certain thickness is formed, and HAT-CN is vacuum deposited on the third n-charge generating layer to form a layer with [missing information]. The thickness of the third p-charge generation layer.

[0479] NPB, a hole transport compound, is vacuum deposited on the third p-charge generation layer to form a structure with... A hole transport layer of a certain thickness.

[0480] Vacuum deposition of TCTA on the hole transport layer to form a structure with An electron blocking layer of a certain thickness.

[0481] TPBI, the host compound, and Irppy3, the phosphorescent dopant compound, were co-deposited on the electron blocking layer at a weight ratio of 97:3 to form a layer with… A green emitting layer of varying thickness.

[0482] TPM-TAZ and LiQ were co-deposited on the green emitting layer at a weight ratio of 5:5 to form a layer with… An electron transport layer of a certain thickness.

[0483] Yb was vacuum deposited onto the electron transport layer. The thickness is such that AgMg is continuously vacuum-deposited on it to form a layer with... A cathode of a certain thickness is formed, and CPL is vacuum deposited on the cathode to form a cathode with a thickness of [missing information]. The thickness of the capping layer allows for the fabrication of a series-connected type or type of light-emitting device, consisting of a stack of three emission layers and a single green emission layer.

[0484] Example 6

[0485] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) during the formation of the second emitter layer of the emitter stack (I) to form a structure with... The light-emitting device is fabricated in substantially the same manner as in Comparative Example 3, except for the second emitting layer of thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds).

[0486] Example 7

[0487] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) during the formation of the second emitter layer of the emitter stack (II) to form a structure with The second emitting layer (compound body-2:compound 100 in a weight ratio of 97:3, and TPM-TAZ in a weight of approximately 10 wt% based on the total weight of the compounds) was used to fabricate the light-emitting device in a manner substantially the same as that in Comparative Example 3.

[0488] Example 8

[0489] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) during the formation of the second emitter layer of the emitter stack (III) to form a structure with The light-emitting device is fabricated in substantially the same manner as in Comparative Example 3, except for the second emitting layer of thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds).

[0490] Example 9

[0491] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) into each of the second emitter layers of emitter stack (I) and emitter stack (II) during the formation of emitter stack (I), compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) are deposited. Apart from the thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds), the light-emitting device is manufactured in a manner substantially the same as that in Comparative Example 3.

[0492] Example 10

[0493] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) into each of the second emitter layers of emitter stack (I) and emitter stack (III) during the formation of emitter stack (I), compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) are deposited. Apart from the thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds), the light-emitting device is manufactured in a manner substantially the same as that in Comparative Example 3.

[0494] Example 11

[0495] In addition to co-depositing compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) into each of the second emitter layers of emitter stack (II) and emitter stack (III) during the formation of emitter stack (II), compound host-2 (host), compound 100 (doper), and TPM-TAZ (electron transport compound) are deposited. Apart from the thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds), the light-emitting device is manufactured in a manner substantially the same as that in Comparative Example 3.

[0496] Example 12

[0497] Except when forming the second emitter layer of emitter stack (I), the second emitter layer of emitter stack (II), and the second emitter layer of emitter stack (III), compound host-2 (host), compound 100 (doper) and TPM-TAZ (electron transport compound) are co-deposited to Apart from the thickness (the weight ratio of compound body-2 to compound 100 is 97:3, and the weight of TPM-TAZ is approximately 10 wt% based on the total weight of the compounds), the light-emitting device is manufactured in a manner substantially the same as that in Comparative Example 3.

[0498] To evaluate the characteristics of the light-emitting devices in Comparative Examples 1 to 3 and Examples 1 to 12, measurements were taken at 10 mA / cm². 2 Drive voltage, efficiency, and lifetime at current density.

[0499] The driving voltage and current density of the light-emitting device were measured using a source instrument (Keithley Instruments, 2400 series), and the efficiency was measured using a measuring device C9920-2-12 from Hamamatsu Photonics Inc.

[0500]

[0501]

[0502]

[0503] Compound 100

[0504] Table 1

[0505]

[0506] Referring to Table 1, it can be seen that, compared with the light-emitting device of Comparative Example 1, the light-emitting device of Example 1 exhibits superior results in both efficiency and lifetime. Compared with the light-emitting device of Comparative Example 2, the light-emitting devices of Examples 2 to 5 exhibit equivalent or better results in both efficiency and lifetime. Furthermore, compared with the light-emitting device of Comparative Example 3, the light-emitting devices of Examples 6 to 12 exhibit equivalent or better results in both efficiency and lifetime.

[0507] The hole mobility (M) of TPM-TAZ (electron transport compound) H ) and electron mobility (M E )

[0508] The hole mobility (M) of the TPM-TAZ used in forming the second emission layer in each of the light-emitting devices of Examples 1 to 12 was measured using SCLC measurement methods for single-hole devices and single-electron devices. H ) value and electron mobility (M E The values ​​are shown in Table 2.

[0509] Table 2

[0510] TPM-TAZ <![CDATA[3.2×10 -4 cm 2 / Vs]]> <![CDATA[2.8×10 -3 cm 2 / Vs]]>

[0511] Referring to the results in Table 2, it can be seen that TPM-TAZ satisfies Equation (1), thus verifying its electron transport capability. In this respect, when such an electron transport compound is used in conjunction with a second host and a second dopant included in the second emitter layer, the second host exhibits improved electron mobility.

[0512] As a result, the region where excitons are generated at the interface between the first and second emission layers is significantly narrowed, leading to a maximization or increase in the TTA component. Therefore, the problem of reduced lifetime during emission at the interface between the first and second emission layers is solved, while simultaneously maximizing or significantly improving efficiency. Furthermore, these results are in excellent agreement with the light-emitting device results in Table 1.

[0513] According to one or more embodiments, the light-emitting device exhibits improved results in terms of efficiency and lifetime compared to prior art devices.

[0514] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of this disclosure as defined by the claims and their equivalents.

Claims

1. A light-emitting device, the light-emitting device comprising: First electrode; The second electrode faces the first electrode; The interlayer, located between the first electrode and the second electrode, includes an emitter layer stack, an electron blocking layer, and a hole blocking layer. The emitter layer stack comprises: a first emitter layer, including a first host and a first dopant; and a second emitter layer, including a second host, a second dopant, and an electron transport compound. The first and second components are different compounds from each other. The first emission layer is in contact with the second emission layer. The second emitter layer is closer to the second electrode than the first emitter layer. Both the first dopant and the second dopant are fluorescent dopants. Based on the total amount of compounds in the second emitter layer, the amount of the electron transport compound is in the range of 5 wt% to 15 wt%, and The electron blocking layer is in direct contact with the first emission layer, and the hole blocking layer is in direct contact with the second emission layer.

2. The light-emitting device according to claim 1, wherein, The first emitting layer emits blue light.

3. The light-emitting device according to claim 1, wherein, The second emitting layer emits blue light.

4. The light-emitting device according to claim 1, wherein, The hole mobility M of the electron transport compound H and electron mobility M E Satisfying formula (1): M H ≤ M E ×0.95 (1)。 5. The light-emitting device according to claim 1, wherein, The electron transport compounds include: compounds containing a CN moiety; compounds containing a triazole moiety; compounds containing an oxadiazole moiety; compounds containing an aromatic imidazole moiety; compounds containing a naphthalimide moiety; compounds containing a perylene moiety; boron-containing compounds; compounds containing anthracene and phosphine oxide moieties; compounds containing a triazine moiety; compounds containing a pyridine moiety; compounds containing a pyrimidine moiety; or compounds containing a carbazole moiety.

6. The light-emitting device according to claim 1, wherein, The electron transport compound includes one of the following compounds: 。 7. The light-emitting device according to claim 1, wherein, The first and second emission layers emit light through a delayed fluorescence emission mechanism.

8. The light-emitting device according to claim 1, wherein, Holes injected from the first electrode and electrons injected from the second electrode recombine at the interface between the first emission layer and the second emission layer.

9. The light-emitting device according to claim 1, wherein, The first body comprises the following compounds: 。 10. The light-emitting device according to claim 1, wherein, The second body comprises the following compounds: 。

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