Semiconductor device

Abstract

A semiconductor device is provided. The semiconductor device includes a substrate having a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements. The semiconductor device also includes a light adjustment structure disposed on the substrate. The light adjustment structure includes a patterned multilayer film having a plurality of grooves corresponding to the first photoelectric conversion elements. The first photoelectric conversion elements are configured to sense near-infrared light, and the second photoelectric conversion elements are configured to sense visible light.

Description

Technical Field

[0001] This disclosure relates to a semiconductor device, and more particularly to a semiconductor device comprising a photoelectric conversion element for sensing near-infrared light. Background Technology

[0002] In recent years, semiconductor devices with photoelectric conversion elements have been frequently used as biometric identification devices, and these devices have been widely applied in various fields. Biometric devices use inherent physical characteristics of humans (such as fingerprints, facial features, irises, etc.) to verify identity. For example, biometric devices can function as fingerprint recognition devices, facial recognition devices, iris recognition devices, etc., and can be used in portable devices (such as mobile phones, tablets, laptops, etc.). These applications of biometric devices bring users a safe and convenient user experience.

[0003] However, with the advancement of science and technology, the security of biometric technology is gradually being challenged. This means that forged human characteristics can be created using artificial materials. For example, forged fingers can be manufactured using 3D printing, making it impossible for existing biometric devices (such as fingerprint recognition devices) to distinguish between forged fingerprints and genuine fingerprints. Summary of the Invention

[0004] The purpose of this disclosure is to provide a semiconductor device to solve at least one of the above-mentioned problems.

[0005] Generally, biometric devices only capture images of human features under visible light. It is difficult to distinguish between fake and real human features in an image using visible light.

[0006] The semiconductor device according to embodiments of the present disclosure includes a photoelectric conversion element for sensing near-infrared light and another photoelectric conversion element for sensing visible light. That is, the semiconductor device according to embodiments of the present disclosure can capture images of human features using both near-infrared and visible light. Therefore, it is easier to distinguish images from forged human features, thereby effectively improving the security of the semiconductor device.

[0007] Some embodiments of this disclosure include a semiconductor device. The semiconductor device includes a substrate having a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements. The semiconductor device also includes a light adjustment structure disposed on the substrate. The light adjustment structure includes a patterned multilayer film having a plurality of trenches corresponding to the first photoelectric conversion elements. The first photoelectric conversion elements are used to sense near-infrared light, and the second photoelectric conversion elements are used to sense visible light.

[0008] In some embodiments, the sensing time of the first photoelectric conversion element is shorter than the sensing time of the second photoelectric conversion element during a predetermined period.

[0009] In some embodiments, the light adjustment structure further includes a light collimation layer disposed on a patterned multilayer film.

[0010] In some embodiments, the light collimation layer includes a first light-shielding layer having a plurality of first holes corresponding to a first photoelectric conversion element and a plurality of second holes corresponding to a second photoelectric conversion element.

[0011] In some embodiments, the light adjustment structure further includes a plurality of filter elements disposed in the groove.

[0012] In some embodiments, the light collimation layer further includes a plurality of light-transmitting portions disposed in the first hole and the second hole.

[0013] In some embodiments, the light adjustment structure further includes a plurality of filter elements disposed in the first aperture.

[0014] In some embodiments, the light collimation layer further includes a plurality of light-transmitting portions disposed in the groove and the second hole.

[0015] In some embodiments, the semiconductor device further includes a focusing structure disposed on the light collimation layer.

[0016] In some embodiments, the light-concentrating structure includes a second light-shielding layer having a plurality of third holes corresponding to the first photoelectric conversion element and the second photoelectric conversion element; the light-concentrating structure also includes a plurality of microlenses disposed in the third holes; the light-concentrating structure further includes a transparent layer disposed between the light collimating layer and the second light-shielding layer.

[0017] In some embodiments, the light adjustment structure further includes a light collimation layer disposed between the substrate and the patterned multilayer film.

[0018] In some embodiments, the semiconductor device further includes a light-focusing structure disposed on a patterned multilayer film.

[0019] In some embodiments, the light-concentrating structure includes a second light-shielding layer having a plurality of third holes corresponding to the first photoelectric conversion element and the second photoelectric conversion element; the light-concentrating structure also includes a plurality of microlenses disposed in the third holes; the light-concentrating structure further includes a transparent layer disposed between the patterned multilayer film and the second light-shielding layer.

[0020] In some embodiments, the first photoelectric conversion element is used to sense an electromagnetic spectral band with a wavelength of 700 nm to 1100 nm.

[0021] The beneficial effect of this disclosure is that, since the semiconductor device according to the embodiments of this disclosure includes a photoelectric conversion element (e.g., the aforementioned first photoelectric conversion element) for sensing near-infrared light and another photoelectric conversion element (e.g., the aforementioned second photoelectric conversion element) for sensing visible light, even if a fake human feature can be made from artificial materials, the image of the fake human feature obtained by near-infrared light may be different from the image of the real human feature obtained by near-infrared light. Attached Figure Description

[0022] The embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that the various feature components are not drawn to scale and are only used for illustrative purposes. In fact, the dimensions of the components may be enlarged or reduced to clearly show the technical features of the embodiments of this disclosure.

[0023] Figure 1 This shows a partial cross-sectional view of a semiconductor device according to an embodiment of the present disclosure.

[0024] Figures 2A to 2C Examples of different exposure times are shown.

[0025] Figure 3 This shows a partial cross-sectional view of a semiconductor device according to another embodiment of the present disclosure.

[0026] Figure 4 This shows a partial cross-sectional view of a semiconductor device according to an embodiment of the present disclosure.

[0027] Figure 5 This shows a partial cross-sectional view of a semiconductor device according to another embodiment of the present disclosure.

[0028] Figure 6 This shows a partial cross-sectional view of a semiconductor device according to an embodiment of the present disclosure.

[0029] Figure 7 This shows a partial cross-sectional view of a semiconductor device according to another embodiment of the present disclosure.

[0030] Figure 8 This shows a partial cross-sectional view of a semiconductor device according to an embodiment of the present disclosure.

[0031] Figure 9 This shows a partial cross-sectional view of a semiconductor device according to another embodiment of the present disclosure.

[0032] The attached figures are labeled as follows:

[0033] 100, 102, 104, 106, 108, 110, 112, 114: Semiconductor devices

[0034] 10:Substrate

[0035] 12: First photoelectric conversion element

[0036] 14: Second photoelectric conversion element

[0037] 20: Light Adjustment Structure

[0038] 21: Patterned multilayer film

[0039] 21T: Groove

[0040] 23: Filter section

[0041] 25: Optical Collimation Layer

[0042] 27: First light-shielding layer

[0043] 27C1: First hole

[0044] 27C2: Second hole

[0045] 29: Translucent section

[0046] 30: Concentrating structure

[0047] 31: Second light-shielding layer

[0048] 31C: Third hole

[0049] 33: Microlenses

[0050] 35: Transparent layer Detailed Implementation

[0051] The following disclosure provides many different embodiments or examples to implement the various features of this application. The following disclosure describes specific examples of the various components and their arrangements to simplify the explanation. Of course, these specific examples are not intended to be limiting. For example, if the embodiments of this disclosure describe a first feature formed on or above a second feature, it means that it may include embodiments where the first feature and the second feature are in direct contact, or it may include embodiments where an additional feature is formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact.

[0052] It should be understood that additional operational steps may be performed before, during, or after the method, and in other embodiments of the method, some operational steps may be replaced or omitted.

[0053] Furthermore, spatially related terms may be used, such as "below," "below," "lower," "above," "above," "higher," and similar terms. These spatially related terms are used to facilitate the description of the relationship between one or more elements or features in the illustrations and to one or more other elements or features. These spatially related terms include different orientations of the device in use or operation, as well as the orientations described in the accompanying drawings. When the device is turned to a different orientation (rotated 90 degrees or other orientations), the spatially related adjectives used will also be interpreted according to the orientation after the turn.

[0054] In instruction manuals, the terms "about," "approximately," and "roughly" typically indicate within 20%, 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. The given quantity is an approximate quantity; that is, even without specific mention of "about," "approximately," or "roughly," the meaning of "about," "approximately," or "roughly" can still be implied.

[0055] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in embodiments of this disclosure.

[0056] The different embodiments disclosed below may reuse the same reference numerals and / or designations. These reuses are for the purpose of simplicity and clarity and are not intended to limit any specific relationship between the different embodiments and / or structures discussed.

[0057] The semiconductor device in this disclosure can be used as a biometric identification device, such as a fingerprint identification device, but this disclosure is not limited thereto. The semiconductor device shown in this disclosure can also be applied to other suitable devices as needed.

[0058] Figure 1 This shows a partial cross-sectional view of a semiconductor device 100 according to an embodiment of the present disclosure. It should be noted that, for simplicity, Figure 1 Some components may be omitted.

[0059] Reference Figure 1The semiconductor device 100 includes a substrate 10. In some embodiments, the material of the substrate 10 may include elemental semiconductors (e.g., silicon or germanium), compound semiconductors (e.g., tantalum carbide (SiTa), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP)), alloy semiconductors (e.g., silicon germanium (SiGe), silicon germanium carbide (SiGeC), gallium arsenide phosphide (GaAsP), or indium gallium phosphide (GaInP)), other suitable semiconductors, or combinations thereof, but the embodiments disclosed herein are not limited thereto.

[0060] In some embodiments, substrate 10 may be a semiconductor-on-insulator (SOI) substrate. For example, substrate 10 may be a silicon-on-insulator substrate, but this disclosure is not limited thereto. In some embodiments, substrate 10 may be a semiconductor wafer (e.g., a silicon wafer or other suitable semiconductor wafer). In some embodiments, substrate 10 may include various conductive features (e.g., conductive lines or vias). For example, the aforementioned conductive features may be made of aluminum (Al), copper (Cu), tungsten (W), their respective alloys, other suitable conductive materials, or combinations thereof, but this disclosure is not limited thereto.

[0061] like Figure 1 As shown, the substrate 10 may have a plurality of first photoelectric conversion elements 12 ( Figure 1 Only one first photoelectric conversion element 12 and a plurality of second photoelectric conversion elements 14 are shown in the illustration. In some embodiments, the first photoelectric conversion element 12 and the second photoelectric conversion element 14 may be formed by processes such as ion implantation and / or diffusion processes. For example, the first photoelectric conversion element 12 and the second photoelectric conversion element 14 may be configured to form transistors, photodiodes, PIN diodes and / or light-emitting diodes, but the embodiments disclosed herein are not limited thereto.

[0062] In the embodiments of this disclosure, the first photoelectric conversion element 12 and the second photoelectric conversion element 14 are different. More specifically, the first photoelectric conversion element 12 is used to sense near-infrared light (e.g., an electromagnetic spectrum band with wavelengths from 700 nm to 1100 nm), while the second photoelectric conversion element 14 is used to sense visible light (e.g., an electromagnetic spectrum band with wavelengths from 400 nm to 700 nm), but the embodiments of this disclosure are not limited thereto.

[0063] In some embodiments, the first photoelectric conversion element 12 and the second photoelectric conversion element 14 may form an array structure, and the number of the first photoelectric conversion element 12 and the number of the second photoelectric conversion element 14 may be different. For example, the ratio of the number of the first photoelectric conversion element 12 to the number of the second photoelectric conversion element 14 may be 1 / 3 to 1 / 9999, but the embodiments disclosed herein are not limited thereto.

[0064] Reference Figure 1 The semiconductor device 100 includes a light adjustment structure 20, which is disposed on the substrate 10. For example... Figure 1 As shown, the light adjustment structure 20 may include a patterned multilayer film 21 and multiple filter sections 23. Figure 1 Only one filter section 23 is shown in the figure. Specifically, the patterned multilayer film 21 can be disposed on the substrate 10, and the filter section 23 can be disposed corresponding to the first photoelectric conversion element 12.

[0065] In embodiments of this disclosure, the patterned multilayer film 21 and the filter portion 23 are different filters. Specifically, the patterned multilayer film 21 may be a hybrid filter that can cut off infrared (IR) light with a specific wavelength (e.g., about 700 nm to about 1100 nm) and allow visible light with a specific wavelength (e.g., about 400 nm to about 700 nm) to pass through. Conversely, the filter portion 23 can cut off visible light with a specific wavelength (e.g., about 400 nm to about 700 nm) and allow infrared (IR) light with a specific wavelength (e.g., about 700 nm to about 1100 nm) to pass through.

[0066] In some embodiments, the patterned multilayer film 21 can be formed by a deposition process, such as chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), other similar techniques, or combinations thereof, but the embodiments disclosed herein are not limited thereto. Similarly, the filter portion 23 can also be formed by a deposition process.

[0067] like Figure 1 As shown, the patterned multilayer film 21 has multiple grooves 21T ( Figure 1Only one trench 21T is shown in the diagram, and the filter portion 23 is disposed in the trench 21T, but the embodiments disclosed herein are not limited thereto. In some embodiments, a patterning process can be performed on a multilayer film to form a patterned multilayer film 21. For example, a mask layer (not shown) can be disposed on a multilayer film, and then this mask layer can be used as an etching mask to perform an etching process to etch the multilayer film to form the trench 21T (and form the patterned multilayer film 21); then, the filter portion 23 is deposited in the trench 21T, but the embodiments disclosed herein are not limited thereto.

[0068] In some embodiments, the mask layer may comprise a hard mask and may comprise silicon oxide (SiO2), silicon nitride (SiN), silicon oxynitride (SiON), silicon carbide (SiC), silicon carbide nitride (SiCN), similar materials, or combinations thereof, but this disclosure is not limited thereto. The mask layer may be a single layer or a multilayer structure. The mask layer may be formed by deposition processes, photolithography processes, other suitable processes, or combinations thereof, but this disclosure is not limited thereto. For example, a photolithography process may include photoresist coating (e.g., spin coating), soft baking, mask aligning, exposure, post-exposure baking (PEB), developing, rinsing, drying (e.g., hard baking), other suitable processes, or combinations thereof, but this disclosure is not limited thereto.

[0069] In some embodiments, the etching process may include a dry etching process, a wet etching process, or a combination thereof. For example, a dry etching process may include reactive ion etching (RIE), inductively coupled plasma (ICP) etching, neutron beam etching (NBE), electron cyclotron resonance (ERC) etching, similar etching processes, or combinations thereof, but this disclosure is not intended to limit the scope of the invention. For example, a wet etching process may use, for example, hydrofluoric acid (HF), ammonium hydroxide (NH4OH), or any suitable etchant.

[0070] In some embodiments, a user's features (e.g., fingerprints) may reflect visible and infrared (IR) light. The reflected infrared light can then be sensed by a first photoelectric conversion element 12 to generate an infrared image, and the reflected visible light can be sensed by a second photoelectric conversion element 14 to generate a visible light image. Here, the infrared and visible light may originate from the device employing the semiconductor device 100 or from external sources (e.g., ambient light or sunlight), but this disclosure is not limited to these embodiments.

[0071] Figures 2A to 2C Examples of different exposure times are shown. (Refer to...) Figure 2A Since the second photoelectric conversion element 14 is used to sense visible light, it requires a long exposure time to obtain a high-quality (i.e., good signal) image. However, if the sensing time of the first photoelectric conversion element 12 is the same as that of the second photoelectric conversion element 14 (i.e., both the first photoelectric conversion element 12 and the second photoelectric conversion element 14 have long exposure times) within a predetermined sensing time period, the first photoelectric conversion element 12 will obtain a low-quality image due to signal saturation.

[0072] In addition, refer to Figure 2B Since the first photoelectric conversion element 12 is used to sense near-infrared light, it requires a short exposure time to obtain a high-quality (i.e., good signal) image. However, if the sensing time of the second photoelectric conversion element 14 is the same as that of the first photoelectric conversion element 12 (i.e., both the first photoelectric conversion element 12 and the second photoelectric conversion element 14 have short exposure times) within a predetermined sensing period, the second photoelectric conversion element 14 will obtain a low-quality image due to the low light-sensitive signal.

[0073] Therefore, refer to Figure 2C The sensing time of the first photoelectric conversion element 12 is shorter than that of the second photoelectric conversion element 14 within a predetermined period, so that both the first photoelectric conversion element 12 and the second photoelectric conversion element 14 can obtain high-quality (i.e., good signal) images.

[0074] Furthermore, even if forged human features can be created using artificial materials, the image of the forged human features obtained through near-infrared light may differ from the image of genuine human features obtained through near-infrared light. Therefore, the semiconductor device 100 according to embodiments of this disclosure can distinguish between forged human features and genuine human features, effectively improving the security of the semiconductor device 100 according to embodiments of this disclosure.

[0075] Reference Figure 1The light adjustment structure 20 may also include a light collimation layer 25, which is disposed on the patterned multilayer film 21 (and the filter portion 23). In some embodiments, the light collimation layer 25 may include a first light-shielding layer 27 and a plurality of light-transmitting portions 29. Figure 1 As shown, the first light-shielding layer 27 may have a plurality of first holes 27C1 corresponding to the first photoelectric conversion element 12. Figure 1 Only one first hole 27C1 and a plurality of second holes 27C2 corresponding to the second photoelectric conversion element 14 are shown in the present disclosure. The light-transmitting part 29 may be disposed in the first hole 27C1 and the second hole 27C2, but the embodiments disclosed herein are not limited thereto.

[0076] In some embodiments, the material of the first light-shielding layer 27 may include photoresist (e.g., black photoresist or other suitable non-transparent photoresist), ink (e.g., black ink or other suitable non-transparent ink), molding compound (e.g., black molding compound or other suitable non-transparent molding compound), solder resist (e.g., black solder resist or other suitable non-transparent solder resist), epoxy polymer, other suitable materials, or combinations of the foregoing, but this disclosure is not limited thereto. In some embodiments, the material of the first light-shielding layer 27 may include photocurable material, thermocurable material, or combinations of the foregoing.

[0077] In some embodiments, the material of the aforementioned first light-shielding layer 27 may be patterned to form a shape such as Figure 1 The first hole 27C1 and the second hole 27C2 are shown. For example, a mask layer (not shown) can be disposed on the aforementioned material, and then the mask layer can be used as an etching mask to perform an etching process to form the first hole 27C1 and the second hole 27C2; then, the light-transmitting portion 29 is deposited in the first hole 27C1 and the second hole 27C2, but the embodiments disclosed herein are not limited thereto.

[0078] In some embodiments, the material of the light-transmitting portion 29 may include transparent photoresist, polyimide, epoxy resin, other suitable materials, or combinations thereof, but the embodiments disclosed herein are not limited thereto. In the embodiments of the present disclosure, the light-transmitting portion 29 may be correspondingly disposed with the first photoelectric conversion element 12 and the second photoelectric conversion element 14. For example, the first hole 27C1 and the second hole 27C2 may be aligned with the first photoelectric conversion element 12 and the second photoelectric conversion element 14, respectively. That is, the light-transmitting portion 29 may be aligned with the first photoelectric conversion element 12 and the second photoelectric conversion element 14, but the embodiments disclosed herein are not limited thereto.

[0079] In embodiments of this disclosure, the optical collimation layer 25 can be used to collimate light to reduce energy loss due to light divergence. Therefore, the optical collimation layer 25 can be applied in a semiconductor device 100 (e.g., a biometric device) to improve recognition efficiency.

[0080] Figure 3 This shows a partial cross-sectional view of a semiconductor device 102 according to another embodiment of the present disclosure. It should be noted that, for simplicity, Figure 3 Some components may be omitted.

[0081] Reference Figure 3 The semiconductor device 102 has the same characteristics as... Figure 1 The semiconductor device 100 shown has a similar structure. Figure 1 The difference in the semiconductor device 100 shown is that, Figure 3 The semiconductor device 102 shown may further include a condensing structure 30 disposed on the light adjustment structure 20. More specifically, the condensing structure 30 is disposed on the light collimation layer 25, but this embodiment is not limited thereto.

[0082] In some embodiments, the light-concentrating structure 30 may include a second light-shielding layer 31, a plurality of microlenses 33, and a transparent layer 35. For example... Figure 3 As shown, the second light-shielding layer 31 may have a plurality of third holes 31C corresponding to the first photoelectric conversion element 12 and the second photoelectric conversion element 14. The microlens 33 may be disposed in the third holes 31C, and the transparent layer 35 may be disposed between the light collimation layer 25 and the second light-shielding layer 31. However, the embodiments disclosed herein are not limited thereto.

[0083] In this embodiment, the microlens 33 may be disposed corresponding to the light-transmitting portion 29. For example, the microlens 33 (or the third hole 31C) may be aligned with the light-transmitting portion 29 (or the first hole 27C1 and the second hole 27C2), the first photoelectric conversion element 12 and the second photoelectric conversion element 14, but this embodiment is not limited thereto.

[0084] In some embodiments, the material of the second light-shielding layer 31 may be the same as or similar to the material of the first light-shielding layer 27. For example, the material of the second light-shielding layer 31 may include photoresist (e.g., black photoresist or other suitable opaque photoresist), ink (e.g., black ink or other suitable opaque ink), molding compound (e.g., black molding compound or other suitable opaque molding compound), solder resist (e.g., black solder resist or other suitable opaque solder resist), epoxy polymer, other suitable materials, or combinations of the foregoing, but this disclosure is not limited thereto. In some embodiments, the material of the second light-shielding layer 31 may include photocurable material, thermocurable material, or combinations of the foregoing.

[0085] Similarly, the material of the aforementioned second light-shielding layer 31 can be patterned to form a shape such as Figure 3 The third aperture 31C is shown. For example, a mask layer (not shown) may be disposed on the aforementioned material, and then the mask layer may be used as an etching mask to perform an etching process to form the third aperture 31C; then, a microlens 33 may be deposited in the third aperture 31C, but the embodiments disclosed herein are not limited thereto.

[0086] In some embodiments, the microlens 33 may be made of a transparent material. For example, the material of the microlens 33 may include glass, epoxy resin, silicone resin, polyurethane, other suitable materials, or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the microlens 33 may be formed by a photoresist reflow method, a hot embossing method, other suitable methods, or combinations thereof. In some embodiments, the steps of forming the microlens 33 may include spin coating, photolithography, etching, other suitable processes, or combinations thereof, but this disclosure is not limited thereto.

[0087] In this embodiment, the microlens 33 may be a semi-convex lens or a convex lens, but this disclosure is not limited thereto. In some embodiments, the microlens 33 may be formed, for example, a microcone, a square pyramid, a flat-topped cone, etc., but this disclosure is not limited thereto. Any other light-focusing structure may be used instead. Figure 3 Microlens 33 is shown.

[0088] In addition, although Figure 3The microlens 33 is shown to be disposed in the third aperture 31C, but this disclosure is not limited thereto. In some other embodiments, the microlens 33 may be disposed above or above the third aperture 31C, and the third aperture 31C may be filled with other transparent material.

[0089] In some embodiments, the material of the transparent layer 35 may be the same as or similar to the material of the light-transmitting portion 29. For example, the material of the transparent layer 35 may include transparent photoresist, polyimide, epoxy resin, other suitable materials, or combinations thereof, but the embodiments disclosed herein are not limited thereto.

[0090] In some embodiments, the light-focusing structure 30 may further focus infrared or visible light reflected by the user’s features, so that the first photoelectric conversion element 12 and the second photoelectric conversion element 14 can capture better images (i.e., further enhance the sensing capability of the semiconductor device 102).

[0091] Figure 4 This shows a partial cross-sectional view of a semiconductor device 104 according to an embodiment of the present disclosure. It should be noted that, for simplicity, Figure 4 Some components may be omitted.

[0092] Reference Figure 4 Semiconductor device 104 has the same characteristics as Figure 1 The semiconductor device 100 shown has a similar structure. Figure 1 The difference in the semiconductor device 100 shown is that, Figure 4 The light-filtering portion 23 of the semiconductor device 104 shown can replace some of the light-transmitting portions 29 and is disposed in the corresponding first hole 27C1. That is, the light-filtering portion 23 can be disposed in the first hole 27C1 corresponding to the first photoelectric conversion element 12.

[0093] like Figure 4 As shown, the filter section 23 can be disposed in the groove 21T of the patterned multilayer film 21. Figure 4 Only one filter section 23 and one trench 21T are shown (above the trench 21T of the patterned multilayer film 21). Furthermore, as... Figure 4 As shown, some light-transmitting portions 29 are disposed in the groove 21T. That is, the light-transmitting portions 29 are disposed in the groove 21T and the second hole 27C2, but the embodiments disclosed herein are not limited thereto.

[0094] Figure 5 This shows a partial cross-sectional view of a semiconductor device 106 according to another embodiment of the present disclosure. It should be noted that, for simplicity, Figure 5 Some components may be omitted.

[0095] Reference Figure 5The semiconductor device 106 has a similar Figure 4 The semiconductor device 104 shown has a similar structure. (And...) Figure 4 The difference in the semiconductor device 104 shown is that, Figure 5 The semiconductor device 106 shown may further include a light-concentrating structure 30 disposed on the light-adjusting structure 20. More specifically, the light-concentrating structure 30 is disposed on the light-collimating layer 25, but this embodiment is not limited thereto.

[0096] Similarly, the light-concentrating structure 30 may include a second light-shielding layer 31, multiple microlenses 33, and a transparent layer 35. For example... Figure 5 As shown, the second light-shielding layer 31 may have multiple third holes 31C, the microlens 33 may be disposed in the third holes 31C, and the transparent layer 35 may be disposed between the light collimation layer 25 and the second light-shielding layer 31, but the embodiments disclosed herein are not limited thereto.

[0097] Figure 6 This shows a partial cross-sectional view of a semiconductor device 108 according to an embodiment of the present disclosure. It should be noted that, for simplicity, Figure 6 Some components may be omitted.

[0098] Reference Figure 6 The semiconductor device 108 has the same characteristics as... Figure 1 The semiconductor device 100 shown has a similar structure. Figure 1 The difference in the semiconductor device 100 shown is that, Figure 6 The optical collimation layer 25 of the semiconductor device 108 shown can be disposed between the substrate 10 and the patterned multilayer film 21.

[0099] Similarly, the light collimation layer 25 may include a first light-shielding layer 27 and a plurality of light-transmitting portions 29. For example... Figure 6 As shown, the first light-shielding layer 27 may have a plurality of first holes 27C1 corresponding to the first photoelectric conversion element 12 and a plurality of second holes 27C2 corresponding to the second photoelectric conversion element 14, and the light-transmitting portion 29 may be disposed in the first holes 27C1 and the second holes 27C2, but the embodiments disclosed herein are not limited thereto. Figure 6 In the illustrated embodiment, the filter portion 23 may be disposed in the groove 21T of the patterned multilayer film 21. Figure 6 Only one filter section 23 and one groove 21T are shown in the illustration, but the embodiments disclosed herein are not limited thereto.

[0100] In this embodiment, some light-transmitting portions 29 may be disposed between the first photoelectric conversion element 12 and the filter portion 23, while other light-transmitting portions 29 may be disposed between the second photoelectric conversion element 14 and the patterned multilayer film 21, but this embodiment is not limited thereto.

[0101] Figure 7 This shows a partial cross-sectional view of a semiconductor device 110 according to another embodiment of the present disclosure. It should be noted that, for simplicity, Figure 7 Some components may be omitted.

[0102] Reference Figure 7 The semiconductor device 110 has a similar Figure 6 The semiconductor device 108 shown has a similar structure. (And...) Figure 6 The difference in the semiconductor device 108 shown is that, Figure 7 The semiconductor device 110 shown may further include a light-concentrating structure 30 disposed on the light-adjusting structure 20. More specifically, the light-concentrating structure 30 is disposed on the patterned multilayer film 21, but this disclosure is not limited thereto.

[0103] Similarly, the light-concentrating structure 30 may include a second light-shielding layer 31, multiple microlenses 33, and a transparent layer 35. For example... Figure 7 As shown, the second light-shielding layer 31 may have multiple third holes 31C, the microlens 33 may be disposed in the third holes 31C, and the transparent layer 35 may be disposed between the patterned multilayer film 21 and the second light-shielding layer 31, but the embodiments disclosed herein are not limited thereto.

[0104] Figure 8 This shows a partial cross-sectional view of a semiconductor device 112 according to an embodiment of the present disclosure. It should be noted that, for simplicity, Figure 8 Some components may be omitted.

[0105] Reference Figure 8 The semiconductor device 112 has the same characteristics as... Figure 6 The semiconductor device 108 shown has a similar structure. (And...) Figure 6 The difference in the semiconductor device 108 shown is that, Figure 8 The light-filtering portion 23 of the semiconductor device 112 shown can replace some of the light-transmitting portions 29 and is disposed in the corresponding first hole 27C1. That is, the light-filtering portion 23 can be disposed in the first hole 27C1 corresponding to the first photoelectric conversion element 12.

[0106] like Figure 8 As shown, the filter section 23 can be disposed in the groove 21T of the patterned multilayer film 21. Figure 8 Only one filter section 23 and one groove 21T are shown below. Furthermore, as... Figure 8 As shown, some light-transmitting portions 29 are disposed in the groove 21T. That is, the light-transmitting portions 29 are disposed in the groove 21T and the second hole 27C2, but the embodiments disclosed herein are not limited thereto.

[0107] Figure 9This shows a partial cross-sectional view of a semiconductor device 114 according to another embodiment of the present disclosure. It should be noted that, for simplicity, Figure 9 Some components may be omitted.

[0108] Reference Figure 9 Semiconductor device 114 has the same Figure 8 The semiconductor device 112 shown has a similar structure. Figure 8 The difference in the semiconductor device 112 shown is that, Figure 9 The semiconductor device 114 shown may further include a light-concentrating structure 30 disposed on the light-adjusting structure 20. More specifically, the light-concentrating structure 30 is disposed on the patterned multilayer film 21, but this disclosure is not limited thereto.

[0109] Similarly, the light-concentrating structure 30 may include a second light-shielding layer 31, multiple microlenses 33, and a transparent layer 35. For example... Figure 9 As shown, the second light-shielding layer 31 may have multiple third holes 31C, the microlens 33 may be disposed in the third holes 31C, and the transparent layer 35 may be disposed between the patterned multilayer film 21 and the second light-shielding layer 31, but the embodiments disclosed herein are not limited thereto.

[0110] In summary, since the semiconductor device according to the present disclosure includes a photoelectric conversion element (e.g., the aforementioned first photoelectric conversion element) for sensing near-infrared light and another photoelectric conversion element (e.g., the aforementioned second photoelectric conversion element) for sensing visible light, even if a fake human feature can be made from artificial materials, the image of the fake human feature obtained by near-infrared light may be different from the image of the real human feature obtained by near-infrared light.

[0111] Therefore, the semiconductor device according to the embodiments of this disclosure can distinguish between forged human characteristics and real human characteristics, and can effectively improve the security of the semiconductor device according to the embodiments of this disclosure.

[0112] The components of several embodiments have been outlined above to enable those skilled in the art to better understand the views expressed in the embodiments of this disclosure. Those skilled in the art should understand that they can design or modify other processes and structures based on the embodiments of this disclosure to achieve the same purpose and / or advantages as the embodiments described herein. Those skilled in the art should also understand that such equivalent structures do not depart from the spirit and scope of this disclosure, and that they can make various changes, substitutions, and replacements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure is determined by the appended claims. Furthermore, although this disclosure has been described above with reference to several preferred embodiments, it is not intended to limit the scope of this disclosure.

[0113] References to features, advantages, or similar language throughout this specification are not intended to imply that all features and advantages achievable using this disclosure should or may be implemented in any single embodiment of this disclosure. Rather, language relating to features and advantages is to be understood as meaning that a particular feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of this disclosure. Thus, the discussion of features and advantages, as well as similar language, throughout this specification may, but does not necessarily, represent the same embodiments.

[0114] Furthermore, in one or more embodiments, the features, advantages, and characteristics described in this disclosure may be combined in any suitable manner. Based on the description herein, those skilled in the art will recognize that this disclosure may be implemented without one or more specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be identified in certain embodiments that may not be present in all embodiments of this disclosure.

Claims

1. A semiconductor device, comprising: A substrate having multiple first photoelectric conversion elements and multiple second photoelectric conversion elements; as well as A light adjustment structure is disposed on the substrate and includes: A patterned multilayer film having multiple trenches corresponding to multiple first photoelectric conversion elements; The plurality of the first photoelectric conversion elements are used to sense near-infrared light, and the plurality of the second photoelectric conversion elements are used to sense visible light; The sensing time of a plurality of the first photoelectric conversion elements is shorter than the sensing time of a plurality of the second photoelectric conversion elements within the predetermined time period; The patterned multilayer film is used to block near-infrared light and transmit visible light. A filter is provided in the groove, which is used to block visible light and transmit near-infrared light.

2. The semiconductor device of claim 1, wherein a plurality of the first photoelectric conversion elements are used to sense an electromagnetic spectral band with a wavelength of 700 nm to 1100 nm.

3. The semiconductor device of claim 1, wherein the light adjustment structure further comprises: A collimation layer is disposed on the patterned multilayer film.

4. The semiconductor device of claim 3, wherein the optical collimation layer comprises: A first light-shielding layer has a plurality of first holes corresponding to a plurality of first photoelectric conversion elements and a plurality of second holes corresponding to a plurality of second photoelectric conversion elements; and Multiple light-transmitting portions are disposed in multiple first holes and multiple second holes; The light adjustment structure also includes: Multiple filter elements are disposed in multiple of the aforementioned grooves.

5. The semiconductor device of claim 3, wherein the optical collimation layer comprises: A first light-shielding layer has a plurality of first holes corresponding to a plurality of first photoelectric conversion elements and a plurality of second holes corresponding to a plurality of second photoelectric conversion elements; and Multiple light-transmitting portions are disposed in multiple grooves and multiple second holes; The light adjustment structure also includes: Multiple filter elements are disposed in multiple first holes.

6. The semiconductor device of claim 3, further comprising: A light-focusing structure is disposed on the light collimation layer, wherein the light-focusing structure includes: A second light-shielding layer has a plurality of third holes corresponding to a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements; Multiple microlenses are disposed in multiple of the third holes; and A transparent layer is disposed between the light collimation layer and the second light-shielding layer.

7. The semiconductor device of claim 1, wherein the light adjustment structure further comprises: A collimation layer is disposed between the substrate and the patterned multilayer film.

8. The semiconductor device of claim 7, wherein the optical collimation layer comprises: A first light-shielding layer has a plurality of first holes corresponding to a plurality of first photoelectric conversion elements and a plurality of second holes corresponding to a plurality of second photoelectric conversion elements; and Multiple light-transmitting portions are disposed in multiple first holes and multiple second holes; The light adjustment structure also includes: Multiple filter elements are disposed in multiple of the aforementioned grooves.

9. The semiconductor device of claim 7, wherein the optical collimation layer comprises: A first light-shielding layer has a plurality of first holes corresponding to a plurality of first photoelectric conversion elements and a plurality of second holes corresponding to a plurality of second photoelectric conversion elements; and Multiple light-transmitting portions are disposed in multiple grooves and multiple second holes; The light adjustment structure also includes: Multiple filter elements are disposed in multiple first holes.

10. The semiconductor device of claim 7, further comprising: A light-focusing structure is disposed on the patterned multilayer film, wherein the light-focusing structure includes: A second light-shielding layer has a plurality of third holes corresponding to a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements; Multiple microlenses are disposed in multiple of the third holes; and A transparent layer is disposed between the patterned multilayer film and the second light-shielding layer.

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