用于接合衬底的设备和方法
By reducing heating temperature and removing substrate fixation in the semiconductor industry, combined with pressure loading and controlled bonding waves, the bonding error problem between substrates was solved, achieving higher precision substrate stack bonding.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- EV GRP E THALLNER GMBH
- Filing Date
- 2016-02-16
- Publication Date
- 2026-07-17
AI Technical Summary
In the semiconductor industry, existing technologies struggle to achieve error-free, uniform bonding between substrates. In particular, insufficient alignment accuracy of functional units due to substrate misalignment, thermal expansion, and stress makes it difficult to eliminate "runaway" errors.
By reducing the heating temperature during the bonding process, releasing the substrate from fixation, allowing the substrate stack to deform freely, and applying pressure and ventilation during bonding, the "bounce" error is reduced by utilizing radially symmetrical contact and controlling the bonding wave velocity.
It improves the accuracy of substrate bonding, ensures structural consistency at each location, reduces "runaway" errors, and enhances the overall alignment accuracy of the substrate stack.
Smart Images
Figure CN114334624B_ABST