Gas delivery apparatus, delivery method, and semiconductor manufacturing apparatus

Abstract

The application discloses a gas conveying device, a conveying method and a semiconductor manufacturing equipment, and relates to the technical field of semiconductor equipment, to solve the problem that condensation occurs in the process that gas is conveyed to a process cavity, and the process cavity is polluted or the pipe orifice is blocked in the semiconductor preparation process. The gas conveying device is used for conveying gas to the process cavity. The gas conveying device comprises a gas conveying pipeline, a first heating structure and a second heating structure. The first heating structure is arranged outside the gas conveying pipeline. The second heating structure is arranged inside the gas conveying pipeline. The semiconductor manufacturing equipment comprises the gas conveying device and the process cavity connected with the gas conveying device. The gas conveying device provided by the application is used for preventing the gas from being condensed in the process that the gas is conveyed to the process cavity, so that the problems that the gas conveying pipeline is blocked and the process cavity is polluted are solved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a gas delivery device, delivery method, and semiconductor manufacturing equipment. Background Technology

[0002] In semiconductor manufacturing, many processes require the introduction of gas into the process chamber. For example, in vapor deposition, a vaporizer is used to convert a liquid source into gas, which is then introduced into the process chamber to fabricate thin films.

[0003] The gas converted in the vaporizer is prone to condensation on its way to the process chamber, forming droplets that adhere to the bottom of the pipe. As the number of droplets at the bottom of the pipe increases, it may block the pipe opening, preventing gas from passing through, or some liquid may enter the chamber and contaminate it. Summary of the Invention

[0004] The purpose of this invention is to provide a gas delivery device, delivery method, and semiconductor manufacturing equipment to prevent condensation of the gas converted in the vaporizer during its journey to the process chamber, which could contaminate the process chamber or block the pipe opening.

[0005] To achieve the above objectives, the present invention provides a gas delivery device for delivering gas to a process chamber. The gas delivery device includes a gas delivery pipe, a first heating structure, and a second heating structure. The first heating structure is located outside the gas delivery pipe. The second heating structure is located inside the gas delivery pipe.

[0006] Compared with existing technologies, the gas conveying device provided by this invention features a first heating structure on the outside of the gas pipeline. This first heating structure heats the gas pipeline, preventing heat transfer from the gas inside the pipeline to the pipeline, reducing heat loss, and also transferring heat to the gas inside the pipeline to prevent condensation. Furthermore, a second heating structure is installed inside the gas pipeline to heat the gas within the pipeline. The combined use of the first and second heating structures ensures that the gas temperature inside the pipeline is higher than the boiling point of the gas with the highest boiling point, maintaining a stable vaporization state. Therefore, the gas conveying device of this invention can reduce heat loss while heating the gas, thereby preventing condensation and avoiding contamination of the process chamber or blockage of the pipe opening during gas delivery.

[0007] The present invention also provides a semiconductor manufacturing apparatus, including a process chamber and the aforementioned gas delivery device connected to the process chamber.

[0008] Compared with the prior art, the beneficial effects of the semiconductor manufacturing equipment provided by the present invention are the same as those of the gas delivery device described in the above technical solution, and will not be repeated here.

[0009] The present invention also provides a gas delivery method, using a gas delivery device having a gas delivery pipeline, a first heating structure, and a second heating structure. The first heating structure is disposed outside the gas delivery pipeline, and the second heating structure is disposed inside the gas delivery pipeline. The gas delivery method includes:

[0010] The first heating structure and the second heating structure are controlled to be in a heating state, so that the gas temperature in the gas pipeline is higher than the gas condensation temperature.

[0011] Compared with the prior art, the beneficial effects of the gas delivery method provided by the present invention are the same as those of the gas delivery device described in the above technical solutions, and will not be repeated here. Attached Figure Description

[0012] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this invention, illustrate exemplary embodiments of the invention and are used to explain the invention, but do not constitute an undue limitation of the invention. In the drawings:

[0013] Figure 1 This is a schematic diagram of the structure of semiconductor manufacturing equipment in the prior art;

[0014] Figure 2 This is a schematic diagram of the structure of a gas pipeline in the prior art;

[0015] Figure 3 A schematic diagram of the semiconductor manufacturing equipment in this embodiment of the invention;

[0016] Figure 4 This is a schematic diagram of the structure of the control unit in the embodiment of the invention;

[0017] Figure 5 This is a schematic diagram of the gas pipeline structure in an embodiment of the invention;

[0018] Figure 6 This is a schematic diagram of the support structure in an embodiment of the present invention. Figure 1 ;

[0019] Figure 7 This is the usage state of the support structure in an embodiment of the present invention. Figure 1 ;

[0020] Figure 8 This is the usage state of the support structure in an embodiment of the present invention. Figure 2 ;

[0021] Figure 9This is the usage state of the support structure in an embodiment of the present invention. Figure 3 ;

[0022] Figure 10 The following is a flowchart of the gas delivery method in an embodiment of the present invention. Figure 1 ;

[0023] Figure 11 The following is a flowchart of the gas delivery method in an embodiment of the present invention. Figure 2 . Detailed Implementation

[0024] To make the technical problems to be solved, the technical solutions, and the beneficial effects of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.

[0025] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0026] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified. "Several" means one or more, unless otherwise explicitly specified.

[0027] In the description of this invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0028] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0029] Figure 1 A schematic diagram of the structure of semiconductor manufacturing equipment in related technologies is shown. For example... Figure 1 As shown, the semiconductor manufacturing equipment includes a vaporizer 11, a process chamber 15, and a gas delivery pipe 13 connected to the process chamber. Figure 2 A schematic diagram of the gas pipeline 13 is shown. Figure 2 As shown, the gas delivery pipe 13 is externally encased in a first heating structure 14. During the process of delivering gas from the gas delivery pipe 13 to the process chamber 15, the first heating structure 14 operates, heating the mixed gas in the gas delivery pipe 13 to prevent partial condensation caused by heat dissipation from the mixed gas to the gas delivery pipe 13, which could generate droplets or particulate contaminants, clogging the gas delivery pipe 13 and contaminating the process chamber. However, due to the inherent thermal conductivity of heat, the heat gradually decreases as it is conducted towards the center of the gas delivery pipe 13, resulting in uneven heating. Therefore, gas condensation and the generation of droplets and particulate contaminants still occur. As semiconductor manufacturing processes become increasingly refined, the negative impact of these droplets and particulate contaminants on process quality is growing, seriously affecting product quality.

[0030] To solve the problem of condensation of mixed gases in gas conveying devices Figure 3 A schematic diagram of a conductor manufacturing apparatus provided by an embodiment of the present invention is shown. Figure 3 As shown, the semiconductor device includes a process chamber 27 and a gas delivery device connected to the process chamber 27. This gas delivery device solves the gas condensation problem in the prior art, preventing gas from condensing during delivery to the process chamber 27, thus avoiding contamination of the process chamber 27 or blockage of the pipe opening. It should be understood that the process chamber 27 can be used for various deposition processes, dry etching processes, etc., but is not limited to them.

[0031] In practical applications, such as Figure 3 As shown, the aforementioned semiconductor manufacturing equipment also includes a vaporizer 21 connected to a gas delivery device. This vaporizer 21 heats the liquid source, causing it to vaporize and mix with gases such as N2 and He to form a mixed gas that enters the gas delivery pipe 24. The gas delivery pipe 24 delivers the mixed gas (hereinafter referred to as "gas") to the process chamber 27. It should be understood that the gas referred to below can be a gas that is easily condensable, or a mixed gas containing easily condensable gases.

[0032] like Figure 3 and Figure 5As shown, the gas delivery device in this embodiment of the invention can be used to deliver gas to the process chamber 27, but is not limited thereto. The gas delivery device includes a gas delivery pipe 24, a first heating structure 25, and a second heating structure 26. The first heating structure 25 is located outside the gas delivery pipe 24, and the second heating structure 26 is located inside the gas delivery pipe 24.

[0033] like Figure 3 and Figure 5 As shown, the vaporizer supplies gas to the gas delivery pipeline 24. The first heating structure 25 is used to heat the gas to prevent condensation. If gas condensation still occurs even when the first heating structure 25 is continuously heating, the second heating structure 26 starts to work to ensure that the mixed gas in the gas delivery pipeline 24 is always delivered to the process chamber 27 in a gaseous state for subsequent processes.

[0034] like Figure 3 and Figure 5 As shown, through the structure and specific implementation process of the above-described gas conveying device, it can be seen that the gas conveying pipeline 24 is externally equipped with a first heating structure 25 to heat the gas conveying pipeline 24, preventing heat transfer from the gas inside the gas conveying pipeline 24 to the gas conveying pipeline 24, reducing gas heat loss, and also transferring heat to the gas inside the gas conveying pipeline 24 to prevent gas condensation. Furthermore, since a second heating structure 26 is provided inside the gas conveying pipeline 24, the gas can be heated inside the gas conveying pipeline 24. Through the cooperation of the second heating structure 26 and the first heating structure 25, the temperature of the gas inside the gas conveying pipeline 24 is made higher than the boiling point of the gas with the highest boiling point, so that the gas is in a stable vaporized state. Therefore, it can be seen that the gas conveying device provided in this embodiment of the invention can reduce gas heat loss while heating the gas, preventing gas condensation, the generation of droplets and particulate contaminants, and thus preventing the blockage of the gas conveying pipeline 24 and contamination of the process chamber 27.

[0035] As one possible implementation, such as Figure 5 As shown, the first heating structure 25 is a heating jacket wrapped around the gas pipeline 24. This heating jacket is used to heat the gas pipeline 24 from the outside and transfer heat to the gas inside the pipeline 24, thus heating the gas. The shape of the heating jacket can be square, round, etc., and is not limited here, as long as the heating jacket has a heating function. Therefore, the heating jacket can be a heating element, a heating belt, or other structure that can be wrapped around the gas pipeline 24 and has a heating function.

[0036] like Figure 5As shown, the second heating structure 26 is a heating rod arranged along the axial direction of the gas transmission pipe 24. This heating rod is used to heat the gas passing through the gas transmission pipe 24 from inside the pipe. The shape of the heating rod can be square, round, etc., and is not limited here. Since the heating rod has a heating function, it can be a heating element, a heating belt, or other structure with a heating function arranged along the axial direction of the gas transmission pipe 24.

[0037] In one alternative approach, such as Figure 6 As shown, the gas delivery device also includes at least one support structure 30. A second heating structure 26 is disposed on at least one support structure 30. There may be one or more support structures 30. It should be understood that the support structure 30 is made of a material with thermally conductive properties.

[0038] like Figure 8 As shown, when there is only one support structure 30, it is used to heat the second heating structure 26. The length of the support structure 30 can be limited to ensure it supports the second heating structure 26, preventing it from bending or tilting and thus avoiding uneven heating.

[0039] like Figure 9 As shown, when there are two or more support structures 30, they are arranged at appropriate intervals to ensure that the support structure 30 can support the second heating structure 26 and prevent the second heating structure 26 from bending or tilting, thus avoiding uneven heating. It should be understood that... Figure 5 This is only a schematic diagram of the support structure 30; the actual number of support structures 30 is not limited to the five shown in the diagram.

[0040] In one example, such as Figure 6 and Figure 7 As shown, each support structure 30 includes an outer ring 31, an inner ring 32, and a connector 33 connecting the inner ring 32 and the outer ring 31. The outer ring 31 is fitted into the inner wall of the gas pipeline 24. The second heating structure 26 is disposed on the inner ring 32. The inner ring 32 and the outer ring 31 can be circular, square, or other shapes, and are not limited thereto, as long as the second heating structure 26 is arranged along the axial direction of the gas pipeline 24.

[0041] like Figure 7As shown, when the inner ring 32 and the outer ring 31 are concentric circles, the second heating structure 26 passes through the inner ring 32 and is arranged along the axial direction of the gas supply pipe 24. The outer ring 31 is fitted and connected to the inner wall of the gas supply pipe 24. Specifically, this fit can be an interference fit to ensure the tightness of the connection between the outer ring 31 and the gas supply pipe 24, prevent the support structure 30 from tilting, and thus ensure that the second heating structure 26 is stably arranged along the axial direction of the gas supply pipe 24. A connector 33 is connected between the inner ring 32 and the outer ring 31, serving to connect the inner ring 32 and the outer ring 31 and provide support. The arrangement of the inner ring 32, the outer ring 31, and the connector 33 provides support for the second heating structure 26, preventing the second heating structure from tilting or bending.

[0042] like Figure 7 As shown, the geometric center of the inner ring 32 coincides with the central axis of the second heating structure 26. By restricting the geometric center of the inner ring 32, the second heating structure 26 can always be arranged along the axial direction of the gas delivery pipe 24, ensuring that the second heating structure 26 heats the mixed gas in the gas delivery pipe 24 uniformly.

[0043] In one alternative approach, such as Figure 4 As shown, the gas delivery device further includes a control unit for controlling the second heating structure 26 to be in a heating state, so that the gas temperature in the gas delivery pipeline 24 is higher than the gas condensation temperature. It should be understood that the gas here can be a mixture of multiple gases or a single gas, depending on the specific process requirements, and is not limited here. When the gas is a mixture, the gas condensation temperature refers to the gas with the highest condensation temperature in the mixture.

[0044] In one example, such as Figure 4 As shown, the control unit is also used to control the first heating structure 25 to be in a heating state. This is to prevent the loss of gas heat, so as to ensure that the gas in the gas pipeline 24 is in a stable gas state and to prevent gas liquefaction.

[0045] like Figure 4 As shown, the temperature adjustment range of the control unit is 50℃ to 300℃. At this temperature, the control unit has a wide temperature control range, allowing for the setting of higher heating temperatures when heating different gas mixtures, enabling rapid heating of the gas in the gas delivery channel. Furthermore, a significant temperature difference exists between the first heating structure 25 and the gas mixture, ensuring that the first heating structure 25 provides heat to the gas mixture in the gas delivery pipe 24, further reducing the likelihood of condensation and improving semiconductor process quality.

[0046] Of course, to reduce the thermal budget and heat loss in the semiconductor manufacturing process, the temperature range of the first heating structure 25 can be limited to 50°C to 300°C. This not only achieves the purpose of heating the gas in the gas delivery pipe 24, but also saves resources and reduces costs. It should be understood that the temperature control range can be 50°C, 100°C, 200°C, or 300°C, depending on different process requirements and the condensation temperature of the gas delivered by the gas delivery pipe 24.

[0047] In one example, such as Figure 4 As shown, the control unit is also used to determine the liquid level signal in the gas delivery pipeline 24 reaches a preset threshold before the second heating structure 26 is in the heating state. The preset threshold is specifically set based on the experience of technicians and is not limited here, as long as it avoids excessive droplets formed by gas liquefaction, which would affect gas delivery and contaminate the process chamber 27.

[0048] In specific implementation, such as Figure 4 As shown, gas is supplied to the process chamber 27 via the gas supply pipe 24. During this process, the control unit controls the first heating structure 25 to be in a heating state to heat the gas within the gas supply pipe 24. When the control unit determines that the gas level signal within the gas supply pipe 24 has reached a preset threshold, the control unit controls the second heating structure 26 to begin heating to prevent further liquefaction of the gas in the gas supply pipe 24, which could cause blockage of the gas supply pipe 24 and contamination of the process chamber 27. By controlling the first heating structure 25 only when the gas level signal within the gas supply pipe 24 has not reached the preset threshold, the control unit can reduce the thermal budget in the semiconductor manufacturing process, decrease heat loss, and save resources.

[0049] In one example, such as Figure 4 As shown, the gas delivery device also includes a temperature sensor electrically connected to the control unit and a liquid level sensor electrically connected to the control unit. The liquid level sensor is used to detect the liquid level signal within the gas delivery pipeline 24. It should be understood that the temperature sensor here is used to detect the gas temperature within the gas delivery pipeline 24. There are no restrictions on the model or brand of the temperature sensor, as long as it meets the requirements of this embodiment of the invention. The liquid level sensor is used to detect the liquid level signal within the gas delivery pipeline 24. For example, the liquid level sensor can be a liquid level sensor in a narrow sense or a liquid level sensor in a broad sense. It should be understood that a liquid level sensor in a broad sense refers to a sensor that can acquire liquid level signals or liquid level-related images, etc. Sensors that can acquire images can be infrared image sensors, etc.

[0050] For example, such as Figure 4As shown, when the liquid level sensor is used in a narrow sense, it is located at the bottom near the end where the gas pipeline 24 connects to the process chamber 27. Because of its lower density, the gas rises, and liquefied droplets fall to the bottom of the gas pipeline 24, then move towards the end of the gas pipeline 24 connected to the process chamber 27 under the influence of the airflow. At this time, the liquid level sensor at the bottom of the end of the gas pipeline 24 connected to the process chamber 27 detects the liquid level and sends the liquid level signal to the control unit. This allows the control unit to promptly control the second heating structure 26 to heat the gas pipeline 24 when the liquid level signal is greater than or equal to a preset threshold. The liquid level sensor avoids the resource waste caused by the control unit controlling the first heating structure 25 and the second heating structure 26 to operate when the liquid level signal in the gas pipeline 24 is less than the preset threshold.

[0051] For example, when the liquid level sensor is an infrared image sensor, such as Figure 4 As shown, an infrared image sensor can be used to identify whether droplets are generated inside the gas delivery pipe 24. The infrared image sensor can be equipped with an infrared camera or an infrared camera. Using an infrared camera or infrared camera, the temperature difference between the gas droplets formed by gas liquefaction and the gas in the gas delivery pipe 24 can be clearly extracted, and infrared image information can be generated. The control unit determines whether to control the second heating structure 26 to heat the gas delivery pipe 24 by acquiring the infrared image information.

[0052] Among them, such as Figure 4 As shown, the control unit can be one or more processors or controllers, such as a central processing unit (CPU), a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof. It can implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this invention.

[0053] like Figure 10 As shown, this embodiment of the invention also provides a gas delivery method, using a gas delivery device having a gas delivery pipe 24, a first heating structure 25, and a second heating structure 26. The first heating structure 25 is disposed outside the gas delivery pipe 24, and the second heating structure 26 is disposed inside the gas delivery pipe 24. The gas delivery method includes:

[0054] Step 120: The control unit controls the first heating structure 25 and the second heating structure 26 to be in a heating state, so that the gas temperature in the gas pipeline 24 is higher than the gas condensation temperature.

[0055] Compared with the prior art, the beneficial effects of the gas delivery method provided in the embodiments of the present invention are the same as those of the gas delivery device described above, and will not be repeated here.

[0056] like Figure 10 As shown, when the gas delivery device also includes a temperature sensor, the control unit controls the first heating structure 25 and the second heating structure 26 to be in a heating state, so that the gas temperature in the gas delivery pipeline 24 is higher than the gas condensation temperature, the gas delivery method further includes:

[0057] Step 100: The control unit obtains the internal temperature of the gas pipeline 24 provided by the temperature sensor.

[0058] Step 110: The control unit determines that the internal temperature of the gas pipeline 24 is lower than the gas condensation temperature.

[0059] When the control unit obtains the internal temperature of the gas delivery pipe 24 provided by the temperature sensor and determines that the internal temperature of the gas delivery pipe 24 is lower than the gas condensation temperature, the control unit controls the first heating structure 25 and the second heating structure 26 to be in a heating state, so that the gas temperature in the gas delivery pipe 24 is higher than the gas condensation temperature, thereby ensuring that the gas in the gas delivery pipe 24 maintains a stable gas state, preventing the gas delivery pipe 24 from being blocked due to gas condensation and the process chamber 27 from being contaminated, thus improving the quality of semiconductor process.

[0060] like Figure 11 As shown, when the control unit determines that the internal temperature of the gas pipeline 24 is lower than the gas condensation temperature, the control unit controls the first heating structure 25 and the second heating structure 26 to be in a heating state, so that the gas temperature in the gas pipeline 24 is higher than the gas condensation temperature. Specifically, this includes:

[0061] Step 1201: The control unit controls the first heating structure 25 to be in a heating state.

[0062] When the control unit determines that the internal temperature of the gas pipeline 24 is lower than the gas condensation temperature, the control unit first controls the first heating structure 25 to work, heating the gas in the gas pipeline 24 to reduce the loss of gas heat and prevent gas liquefaction.

[0063] Step 1202: The control unit acquires the liquid level signal in the gas delivery pipe 24 provided by the liquid level sensor. This signal is used to determine the degree of gas liquefaction, thereby determining whether to control the second heating structure 26 to operate.

[0064] Step 1203: The control unit determines that the liquid level signal in the gas pipeline 24 is greater than or equal to a preset threshold.

[0065] Step 1204: The control unit controls the second heating structure 26 to be in a heating state. In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0066] The above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A gas conveying device, characterized in that, For supplying gas to the process chamber; the gas supply device includes: Gas pipeline; A first heating structure is disposed outside the gas transmission pipeline; The second heating structure is disposed inside the gas transmission pipeline; The gas delivery device further includes at least one support structure; the second heating structure is disposed on the at least one support structure; the support structure is made of a material with thermal conductivity. Each of the aforementioned support structures includes an outer ring, an inner ring, and a connector between the inner ring and the outer ring; the outer ring is fitted and connected to the inner wall of the gas transmission pipe; the second heating structure is disposed on the inner ring; wherein... The geometric center of the inner ring of the support structure coincides with the central axis of the second heating structure.

2. The gas conveying device according to claim 1, characterized in that, The first heating structure is a heating jacket wrapped around the outside of the gas pipeline; and / or, The second heating structure is a heating rod arranged along the axial direction of the gas pipeline.

3. The gas conveying device according to claim 1 or 2, characterized in that, The gas delivery device further includes a control unit for controlling the second heating structure to be in a heating state, so that the gas temperature in the gas delivery pipeline is higher than the gas condensation temperature.

4. The gas conveying device according to claim 3, characterized in that, The control unit is also used to control the first heating structure to be in a heating state; and / or, The control unit is further configured to determine, before the second heating structure is in the heating state, that the liquid level signal in the gas delivery pipeline is greater than or equal to a preset threshold; and / or, The temperature adjustment range of the control unit is 50℃~300℃.

5. The gas conveying device according to claim 3, characterized in that, The gas delivery device further includes: a temperature sensor electrically connected to the control unit and a liquid level sensor electrically connected to the control unit; the liquid level sensor is used to detect the liquid level signal in the gas delivery pipeline.

6. A semiconductor manufacturing apparatus, characterized in that, The device includes a process chamber and at least one gas delivery device as described in any one of claims 1 to 5 connected to the process chamber.

7. A gas delivery method, characterized in that, A gas conveying device having a gas pipeline, a first heating structure, and a second heating structure is provided; the first heating structure is located outside the gas pipeline, and the second heating structure is located inside the gas pipeline. The gas delivery device further includes at least one support structure; the second heating structure is disposed on the at least one support structure; the support structure is made of a material with thermal conductivity. Each of the aforementioned support structures includes an outer ring, an inner ring, and a connector between the inner ring and the outer ring; the outer ring is fitted and connected to the inner wall of the gas transmission pipe; the second heating structure is disposed on the inner ring; wherein... The geometric center of the inner ring of the support structure coincides with the central axis of the second heating structure; The gas delivery method includes: The first heating structure and the second heating structure are controlled to be in a heating state, so that the gas temperature in the gas pipeline is higher than the gas condensation temperature.

8. The gas delivery method according to claim 7, characterized in that, The gas delivery device further includes a temperature sensor. Before controlling the first heating structure and the second heating structure to be in a heating state, so that the gas temperature in the gas delivery pipeline is higher than the gas condensation temperature, the gas delivery method further includes: Obtain the internal temperature of the gas pipeline provided by the temperature sensor; It was determined that the internal temperature of the gas pipeline was lower than the gas condensation temperature. And / or, The gas delivery device further includes a liquid level sensor, and controlling the first heating structure and the second heating structure to be in a heating state, so that the gas temperature in the gas delivery pipeline is higher than the gas condensation temperature, includes: Control the first heating structure to be in a heating state; Acquire the liquid level signal in the gas transmission pipeline provided by the liquid level sensor; The liquid level signal in the gas pipeline is determined to be greater than or equal to a preset threshold. The second heating structure is controlled to be in a heating state.

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