Substrate processing system and substrate transport method

Abstract

The present invention is capable of appropriately performing transport of a substrate from a batch processing section to a single-wafer processing section in a substrate processing system including both the batch processing section and the single-wafer processing section. The substrate processing system includes a batch processing section, a single-wafer processing section, and a transport section. The batch processing section performs processing on a batch including a plurality of substrates at a prescribed pitch. The single-wafer processing section performs processing on the substrates included in the batch one by one. The transport section transports the substrates from the batch processing section to the single-wafer processing section one by one. The batch processing section includes a processing tank and a support member. The processing tank stores a processing liquid. The support member has a plurality of slots formed at the prescribed pitch, and supports a plurality of substrates in an upright state in each of the plurality of slots from below. The transport section includes a holding member. The holding member is capable of holding the plurality of substrates one by one, and has a thickness larger than the prescribed pitch and capable of being inserted into a gap between the plurality of substrates supported in the processing liquid by the support member and an inner wall surface of the processing tank opposite the plurality of substrates.

Description

Technical Field

[0001] This invention relates to a substrate processing system and a substrate transport method. Background Technology

[0002] In the prior art, there is a substrate processing system that includes two types of processing units: a single-wafer processing unit (single-wafer processing unit) that processes semiconductor wafers and other substrates one by one, and a batch processing unit (batch processing unit) that processes multiple substrates at the same time. The substrates are transported one by one from the batch processing unit to the single-wafer processing unit.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 9-162157 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The present invention provides a technique for appropriately transferring a substrate from the batch processing unit to the single-wafer processing unit in a substrate processing system having both batch processing and single-wafer processing units.

[0008] Technical means for solving technical problems

[0009] One aspect of the substrate processing system of the present invention includes a batch processing unit, a single-substrate processing unit, and a conveying unit. The batch processing unit processes batches (groups) containing multiple substrates at a predetermined pitch. The single-substrate processing unit processes each substrate in a batch individually. The conveying unit conveys substrates one by one from the batch processing unit to the single-substrate processing unit. The batch processing unit includes a processing tank and a support member. The processing tank stores a processing liquid. The support member has multiple slots formed at a predetermined pitch, each slot supporting multiple substrates in an upright position from below. The conveying unit includes a holding member. The holding member is capable of holding multiple substrates one by one and has a thickness larger than the predetermined pitch, allowing it to be inserted into the gap between the multiple substrates supported on the support member within the processing liquid and the inner wall surface of the processing tank opposite to the multiple substrates.

[0010] Invention Effects

[0011] According to the present invention, in a substrate processing system having both a batch processing unit and a single-wafer processing unit, the substrate can be appropriately transported from the batch processing unit to the single-wafer processing unit. Attached Figure Description

[0012] Figure 1 This is a block diagram showing the general structure of the substrate processing system according to the first embodiment.

[0013] Figure 2 This is a schematic top view of the feed area, batching area, and IF area in the substrate processing system of the first embodiment.

[0014] Figure 3 This is a schematic top view of the IF region, single-chip region, and output region in the substrate processing system of the first embodiment.

[0015] Figure 4 This is a block diagram showing the structure of the etching treatment tank in the first embodiment.

[0016] Figure 5 This is a block diagram showing the structure of the rinsing treatment tank in the first embodiment.

[0017] Figure 6 This is a diagram showing the structure of the batch impregnation mechanism of the first embodiment.

[0018] Figure 7 This is a diagram showing the structure of the support member according to the first embodiment.

[0019] Figure 8 This is a diagram showing the structure of the retaining member in the first embodiment.

[0020] Figure 9 This is an enlarged view showing the front end of the support arm in the first embodiment.

[0021] Figure 10 This is a diagram illustrating the thickness of the retainer in the first embodiment.

[0022] Figure 11 This is a schematic diagram showing the structure of the liquid treatment unit in the first embodiment.

[0023] Figure 12 This is a schematic diagram showing the structure of the rotary drying treatment unit in the first embodiment.

[0024] Figure 13 This is a flowchart illustrating the processing flow performed by the substrate processing system of the first embodiment.

[0025] Figure 14A This is a diagram used to illustrate the operation of the fourth conveying mechanism in the first embodiment.

[0026] Figure 14B This is a diagram used to illustrate the operation of the fourth conveying mechanism in the first embodiment.

[0027] Figure 14C This is a diagram used to illustrate the operation of the fourth conveying mechanism in the first embodiment.

[0028] Figure 14D This is a diagram used to illustrate the operation of the fourth conveying mechanism in the first embodiment.

[0029] Figure 14E This is a diagram used to illustrate the operation of the fourth conveying mechanism in the first embodiment.

[0030] Figure 14F This is a diagram used to illustrate the operation of the fourth conveying mechanism in the first embodiment.

[0031] Figure 15A This is a diagram illustrating the operation of the fourth conveying mechanism and the rinsing treatment tank in a modified example of the first embodiment.

[0032] Figure 15B This is a diagram illustrating the operation of the fourth conveying mechanism and the rinsing treatment tank in a modified example of the first embodiment.

[0033] Figure 15C This is a diagram illustrating the operation of the fourth conveying mechanism and the rinsing treatment tank in a modified example of the first embodiment.

[0034] Figure 15D This is a diagram illustrating the operation of the fourth conveying mechanism and the rinsing treatment tank in a modified example of the first embodiment.

[0035] Figure 16 This is a schematic top view of the substrate processing system according to the second embodiment.

[0036] Figure 17 This is a schematic front view of the first mounting section in the second embodiment.

[0037] Figure 18 This is a schematic front view of the second mounting section in the second embodiment.

[0038] Figure 19 This is a schematic side view of the substrate processing system according to the third embodiment.

[0039] Figure 20 It is a schematic top view of a single area of ​​a variant example.

[0040] Explanation of reference numerals in the attached figures

[0041] 1: Substrate Processing System

[0042] 2: Carrier feeding section

[0043] 3: Batch Formation Department

[0044] 4_1: Pre-processing unit

[0045] 4_2: Etching Processing Department

[0046] 4_3: Post-processing unit

[0047] 6: Liquid Treatment Department

[0048] 7: Rotary Drying Processing Section

[0049] 8: Fifth Conveying Mechanism

[0050] 11: Control device

[0051] 12: Control Department

[0052] 13: Storage Department

[0053] 20: First mounting section

[0054] 21: First conveying mechanism

[0055] 22, 23: Bearer Stack

[0056] 24: Loading platform

[0057] 25: Seventh Conveying Mechanism

[0058] 30: Second conveying mechanism

[0059] 31: Batch Retention Department

[0060] 40, 41, 43, 44, 47, 48: Processing tanks

[0061] 42, 45, 46, 49: Batch impregnation facilities

[0062] 50: Third conveying mechanism

[0063] 55: Fourth Conveying Mechanism

[0064] 55a: Arm

[0065] 55b: Retaining element

[0066] 91: Chip mounting stage

[0067] 92: Sixth Conveying Mechanism

[0068] 93: Second mounting section

[0069] 94: Platform

[0070] 95: Platform

[0071] 96: Platform

[0072] 97: Eighth Conveying Mechanism

[0073] 301: Support component

[0074] 311: Slot

[0075] A1: Input Area

[0076] A2: Batch Area

[0077] A3: IF area

[0078] A4: Single-piece area

[0079] A5: Sending Area

[0080] A6: Carrier Conveying Area

[0081] C: Carrier

[0082] W: Chip. Detailed Implementation

[0083] Hereinafter, with reference to the accompanying drawings, a method (hereinafter referred to as "Embodiment") for implementing the substrate processing system and substrate transport method of the present invention will be described in detail. However, the present invention is not limited to this embodiment. Furthermore, the embodiments can be appropriately combined without contradicting the processing content. In the following embodiments, the same reference numerals are used to label the same parts, and repeated descriptions are omitted.

[0084] Furthermore, in the embodiments given below, terms such as "certain," "orthogonal," "perpendicular," or "parallel" are sometimes used, but these terms are not necessarily "certain," "orthogonal," "perpendicular," or "parallel" in a strict sense. That is, the above terms allow for deviations in, for example, manufacturing precision, setting precision, etc.

[0085] Furthermore, in the accompanying figures, to facilitate understanding, an orthogonal coordinate system is sometimes shown, with the X-axis, Y-axis, and Z-axis directions defined as mutually orthogonal, and the positive Z-axis direction as the vertically upward direction. Additionally, the direction of rotation about the vertical axis is sometimes referred to as the θ direction.

[0086] Patent Document 1 discloses a substrate processing system, which includes a batch processing unit that washes multiple substrates together, a single-substrate processing unit that rotates and dries each substrate individually, and a conveying mechanism for conveying substrates. The conveying mechanism has a chuck that grips the periphery of the substrate, and uses the chuck to remove the substrates one by one from the batch processing unit and convey them to the single-substrate processing unit.

[0087] However, in recent substrate processing systems, from the perspective of improving productivity, the pitch between multiple substrates processed together in the batch processing unit has been set to be narrow.

[0088] However, the substrate processing system described in Patent Document 1 does not take into account the proper transport of substrates from the batch processing unit to the single-substrate processing unit when the pitch between substrates is narrow. Therefore, a substrate transport system is desired that can properly transport substrates from the batch processing unit to the single-substrate processing unit even when the pitch between substrates is narrow.

[0089] (First Implementation)

[0090] <Structure of the Substrate Processing System>

[0091] First, refer to Figure 1 The general structure of the substrate processing system of the first embodiment will be described. Figure 1 This is a block diagram showing the general structure of the substrate processing system 1 according to the first embodiment.

[0092] like Figure 1 As shown, the substrate processing system 1 of the first embodiment includes an input area A1, a batching area A2, an IF (interface) area A3, a single-chip area A4, and an output area A5. The input area A1, batching area A2, IF area A3, single-chip area A4, and output area A5 are arranged sequentially.

[0093] In the substrate processing system 1 of the first embodiment, semiconductor wafers (hereinafter referred to as "wafers") are first fed into the delivery area A1. A first mounting section, etc., is provided in the delivery area A1, capable of holding a carrier containing multiple wafers. In the delivery area A1, processes are performed such as removing multiple wafers from the carrier placed in the first mounting section to form a batch, and transferring the formed batches to a batching area.

[0094] In the batching area A2, a batch processing unit is provided to process wafers in batches. In the first embodiment, in the batching area A2, the batch processing unit performs wafer etching and other processes in batches. Furthermore, in the batching area A2, a batch transport mechanism is provided for transporting batches. The batch transport mechanism transports batches formed in the receiving area A1 to the batching area A2.

[0095] In IF region A3, wafers are transferred (transported) from batch region A2 to single-wafer region A4. IF region A3 is equipped with a transport unit that transports wafers one by one from the batch region to the single-wafer region.

[0096] In the single-wafer area A4, a single-wafer processing unit is provided to process each wafer individually. In the first embodiment, a first single-wafer processing unit that feeds wafers from the IF area A3 and a second single-wafer processing unit that processes the wafers processed by the first single-wafer processing unit are provided in the single-wafer area A4.

[0097] Specifically, the first single-wafer processing unit is a liquid processing unit that forms a liquid film on the surface of a wafer. Furthermore, the second single-wafer processing unit comprises multiple rotary drying processing units that bring the wafer with the liquid film formed on its surface into contact with a supercritical fluid and spin-dry the wafer.

[0098] That is, in the substrate processing system 1 of the first embodiment, the wafer is etched in batches in the batch area A2, and then the wafer is rotated and dried one by one in the single wafer area A4.

[0099] In the delivery area A5, a second mounting section is provided, capable of holding an empty carrier. In the delivery area A5, a process is performed to place the wafer, which has undergone spin drying in the single-wafer area A4, into the carrier placed in the second mounting section.

[0100] Below, refer to Figure 2 and Figure 3 The specific structure of the substrate processing system 1 of the first embodiment will be described. Figure 2 This is a schematic top view of the feed area, batching area, and IF area in the substrate processing system 1 of the first embodiment. Furthermore, Figure 3 This is a schematic top view of the IF region, single-chip region, and output region in the substrate processing system 1 of the first embodiment.

[0101] First, refer to Figure 2 The structure of the input area A1, the batch area A2, and the IF area A3 is explained.

[0102] (Regarding delivery to area A1)

[0103] like Figure 2 As shown, a carrier feeding unit 2 and a batch forming unit 3 are arranged in the feeding area A1. The carrier feeding unit 2 and the batch forming unit 3 are arranged along the arrangement direction (X-axis direction) of areas A1 to A5. In addition, the batch forming unit 3 is adjacent to the batching area A2.

[0104] The carrier feeding section 2 includes a first placement section 20, a first conveying mechanism 21, carrier stacks 22 and 23, and a carrier placement platform 24.

[0105] The first mounting section 20 is capable of mounting multiple carriers C transported from the outside. The carrier C is a container that holds multiple (e.g., 25) wafers W arranged vertically in a horizontal orientation. The first transport mechanism 21 transports the carriers C between the first mounting section 20, the carrier stacks 22 and 23, and the carrier mounting stage 24.

[0106] The batch forming unit 3 includes a second transport mechanism 30 and multiple (e.g., two) batch holding units 31 to form a batch consisting of multiple wafers W. In the first embodiment, the batch is formed by combining a total of 50 wafers W housed in two carriers C. The multiple wafers W forming one batch are arranged with their main surfaces facing each other and spaced apart by a certain interval (a predetermined pitch P). The main surface is, for example, the pattern forming surface of the wafer W. The predetermined pitch P is, for example, half the distance between the multiple (e.g., 25) wafers W housed in the carrier C. In the first embodiment, the predetermined pitch P is 5 mm. Furthermore, the number of wafers W constituting a batch is not limited to 50. For example, a batch may also consist of 100 wafers W.

[0107] The second transport mechanism 30 transports multiple wafers W between the carrier C, which is placed on the carrier stage 24, and the batch holding unit 31. The second transport mechanism 30 is, for example, composed of a multi-joint robot, and transports multiple (e.g., 25) wafers W at the same time. In addition, the second transport mechanism 30 is capable of changing the orientation of the multiple wafers W from a horizontal orientation to a vertical orientation during transport.

[0108] The batch holding unit 31 holds multiple wafers W in a vertical orientation for one batch. The second transport mechanism 30 removes multiple wafers W from the carrier C placed on the carrier stage 24 and places them in a vertical orientation in the batch holding unit 31. For example, by repeating this operation twice, one batch is formed.

[0109] (Regarding the batched area A2)

[0110] In the batch processing area A2, a pre-processing unit 4_1, multiple (here, two) etching processing units 4_2, and a post-processing unit 4_3 are configured. The pre-processing unit 4_1, the multiple etching processing units 4_2, and the post-processing unit 4_3 are an example of a batch processing unit.

[0111] The pre-processing unit 4_1, multiple etching processing units 4_2, and post-processing unit 4_3 are arranged sequentially along the arrangement direction (X-axis direction) of regions A1 to A5. Furthermore, the pre-processing unit 4_1 is adjacent to the feeding region A1, and the post-processing unit 4_3 is adjacent to the IF region A3.

[0112] The pretreatment unit 4_1 includes a pretreatment tank 40, a rinsing tank 41, and a batch immersion mechanism 42.

[0113] Processing tanks 40 and 41 are capable of accommodating a single batch of wafers W arranged vertically. Processing tank 40 stores a pretreatment solution. For example, in processing tank 40, DHF (dilute hydrofluoric acid) is stored as a pretreatment solution for removing the natural oxide film. Furthermore, processing tank 41 stores a rinsing solution (e.g., deionized water).

[0114] The batch immersion mechanism 42 holds multiple wafers W forming a batch at intervals in a vertical orientation. The batch immersion mechanism 42 has a lifting mechanism for raising and lowering the held batches, allowing the batches to descend from above the processing tanks 40 and 41 for immersion, or to rise from the processing tanks 40 and 41 for removal. Furthermore, the batch immersion mechanism 42 has a horizontal movement mechanism that allows the batches to move horizontally between a position above the processing tank 40 and a position above the processing tank 41.

[0115] In addition, an example is given here in which the pretreatment tank 40 is arranged on the positive X-axis side of the rinsing tank 41, but the pretreatment tank 40 can also be arranged on the negative X-axis side of the rinsing tank 41.

[0116] The etching processing unit 4_2 includes an etching processing tank 43, a rinsing processing tank 44, and batch immersion mechanisms 45 and 46.

[0117] Processing tanks 43 and 44 are capable of accommodating a single batch of wafers W arranged in a vertical orientation. Processing tank 43 stores an etching solution (hereinafter also referred to as "etching solution"). Details regarding processing tank 43 are described later. Processing tank 44 stores a rinsing solution (e.g., deionized water).

[0118] Batch dipping mechanisms 45 and 46 hold multiple wafers W forming a batch at intervals in a vertical orientation. Batch dipping mechanism 45 has a lifting mechanism for raising and lowering the held batch, causing the batch to descend from above the processing tank 43 for dipping in the processing tank 43, or causing the batch immersed in the processing tank 43 to rise and be removed from the processing tank 43. Similarly, batch dipping mechanism 46 also has a lifting mechanism for raising and lowering the held batch, causing the batch to descend from above the processing tank 44 for dipping in the processing tank 44, or causing the batch immersed in the processing tank 44 to rise and be removed from the processing tank 44.

[0119] In addition, an example is given here in which the etching processing tank 43 is arranged on the positive X-axis side of the rinsing processing tank 44, but the etching processing tank 43 can also be arranged on the negative X-axis side of the rinsing processing tank 44.

[0120] The post-processing unit 4_3 includes a post-processing tank 47, a rinsing tank 48, and a batch immersion mechanism 49.

[0121] Processing tanks 47 and 48 are capable of accommodating a single batch of wafers W arranged vertically. Processing tank 47 stores a post-processing solution. For example, in processing tank 40, SC1 (a mixture of ammonia, hydrogen peroxide, and water) is stored as the post-processing cleaning solution. Furthermore, processing tank 48 stores a rinsing solution (e.g., deionized water (DIW)). This rinsing processing tank 48 is adjacent to IF region A3. Details regarding processing tank 48 are described later.

[0122] The batch immersion mechanism 49 holds multiple wafers W forming a batch at intervals in a vertical orientation. The batch immersion mechanism 49 has a lifting mechanism for raising and lowering the held batches, either lowering the top of the batch processing tanks 47 and 48 to immerse them in the tanks, or raising the batches immersed in the tanks 47 and 48 to remove them from the tanks. Furthermore, the batch immersion mechanism 49 has a horizontal movement mechanism that allows the batches to move horizontally between a position above the processing tank 47 and a position above the processing tank 48. Details regarding the batch immersion mechanism 49 will be described later.

[0123] Here, an example is given of a batch processing unit (pre-processing unit 4_1, multiple etching processing units 4_2 and post-processing unit 4_3) configured in batch region A2. However, the number of batch processing units is not limited to this example, and for example, it can also be 1.

[0124] (Regarding the third conveyor mechanism 50)

[0125] The substrate processing system 1 includes a third conveying mechanism 50 (an example of a batch conveying mechanism). The third conveying mechanism 50 is configured to convey batches from the input area A1 to the batch area A2 across the input area A1 and the batch area A2.

[0126] The third transport mechanism 50 includes a holding body 51, a guide rail 52, and a moving body 53. The holding body 51 holds a batch of wafers W in a vertical orientation. The guide rail 52 extends along the X-axis from the batch holding section 31 in the feed area A1 to the processing slot 48 in the batching area A2. The moving body 53 is disposed on the guide rail 52, allowing the holding body 51 to move along the guide rail 52.

[0127] The third conveying mechanism 50 uses a holding body 51 to hold the batch held by the batch holding unit 31 and conveys the held batch to the batching area A2. Moreover, the third conveying mechanism 50 sequentially conveys the batch to the pre-processing unit 4_1, the etching processing unit 4_2, and the post-processing unit 4_3.

[0128] Here, refer to Figure 4 The etching treatment tank 43 will be described. Figure 4This is a block diagram showing the structure of the etching processing tank 43 in the first embodiment.

[0129] In processing tank 43, a prescribed etching solution is used to selectively etch the silicon nitride (SiN) film and the silicon oxide (SiO2) film formed on wafer W. In this etching process, a solution with silicon concentration adjusted by adding a silicon-containing (Si) compound to an aqueous phosphoric acid (H3PO4) solution is used as the etching solution.

[0130] As a method for adjusting the silicon concentration in the etching solution, one can use a method of immersing the simulation substrate in an aqueous phosphoric acid solution to dissolve the silicon (aging treatment), or a method of dissolving silicon-containing compounds such as colloidal silica in an aqueous phosphoric acid solution. Alternatively, an aqueous solution containing silicon compounds can be added to the aqueous phosphoric acid solution to adjust the silicon concentration.

[0131] like Figure 4 As shown, the etching processing tank 43 includes an inner tank 101 and an outer tank 102. The inner tank 101 is a box-shaped tank that is open at the top and stores etching solution inside. A batch formed from multiple wafers W is immersed in the inner tank 101. The outer tank 102 is open at the top and is disposed around the upper part of the inner tank 101. Etching solution overflowing from the inner tank 101 flows into the outer tank 102.

[0132] In addition, the processing tank 43 includes a phosphoric acid aqueous solution supply unit 103, a silicon supply unit 104, and a DIW supply unit 105.

[0133] The phosphoric acid aqueous solution supply unit 103 includes a phosphoric acid aqueous solution supply source 131, a phosphoric acid aqueous solution supply pipeline 132, and a flow regulator 133.

[0134] Phosphoric acid solution supply source 131 supplies phosphoric acid solution to concentrate phosphoric acid to the desired concentration. Phosphoric acid solution supply line 132 is connected to phosphoric acid solution supply source 131 and outer tank 102, supplying phosphoric acid solution from phosphoric acid solution supply source 131 to outer tank 102.

[0135] A flow regulator 133 is installed on the phosphoric acid aqueous solution supply pipeline 132 to regulate the supply amount of phosphoric acid aqueous solution to the external tank 102. The flow regulator 133 consists of an on / off valve, a flow control valve, a flow meter, etc.

[0136] The silicon supply unit 104 includes a silicon supply source 141, a silicon supply line 142, and a flow regulator 143.

[0137] Silicon supply source 141 is a tank for storing aqueous solutions containing silicon compounds. Silicon supply line 142 is connected to silicon supply source 141 and outer tank 102, supplying aqueous solutions containing silicon compounds from silicon supply source 141 to outer tank 102.

[0138] A flow regulator 143 is installed on the silicon supply line 142 to regulate the supply rate of the silicon-containing aqueous solution to the outer tank 102. The flow regulator 143 consists of an on / off valve, a flow control valve, a flow meter, etc. By adjusting the supply rate of the silicon-containing aqueous solution using the flow regulator 143, the silicon concentration of the etching solution is adjusted.

[0139] The DIW supply unit 105 includes a DIW supply source 151, a DIW supply line 152, and a flow regulator 153. The DIW supply unit 105 supplies DIW to the outer tank 102 to replenish the moisture evaporated due to the heating of the etching solution.

[0140] The DIW supply line 152 is connected to the DIW supply source 151 and the outer tank 102, and supplies DIW at a specified temperature to the outer tank 102 from the DIW supply source 151.

[0141] A flow regulator 153 is installed on the DIW supply line 152 to regulate the amount of DIW supplied to the outer tank 102. The flow regulator 153 consists of an on / off valve, a flow control valve, a flow meter, etc. By adjusting the amount of DIW supplied using the flow regulator 153, the temperature, phosphoric acid concentration, and silicon concentration of the etching solution are adjusted.

[0142] Additionally, the processing tank 43 includes a circulation section 106. The circulation section 106 circulates the etching solution between the inner tank 101 and the outer tank 102. The circulation section 106 includes a circulation line 161, multiple processing solution supply nozzles 162, a filter 163, a heater 164, and a pump 165.

[0143] The circulation line 161 is connected to the outer tank 102 and the inner tank 101. One end of the circulation line 161 is connected to the outer tank 102, and the other end of the circulation line 161 is connected to a plurality of treatment fluid supply nozzles 162 disposed inside the inner tank 101.

[0144] A filter 163, a heater 164, and a pump 165 are disposed in the circulation line 161. The filter 163 removes impurities from the etching solution flowing in the circulation line 161. The heater 164 heats the etching solution flowing in the circulation line 161 to a temperature suitable for etching. The pump 165 delivers the etching solution from the outer tank 102 to the circulation line 161. The filter 163, heater 164, and pump 165 are disposed sequentially from the upstream side.

[0145] The circulation unit 106 delivers the etching solution from the outer tank 102 to the inner tank 101 via the circulation line 161 and multiple processing fluid supply nozzles 162. The etching solution delivered to the inner tank 101 overflows from the inner tank 101 and flows out again to the outer tank 102. In this way, the etching solution circulates between the inner tank 101 and the outer tank 102.

[0146] Alternatively, the circulation section 106 can bring the etching solution to a boiling state by heating it with the heater 164.

[0147] Below, refer to Figure 5 The treatment tank 48 used for rinsing will be described. Figure 5 This is a block diagram of the structure of the rinsing treatment tank 48 of the first embodiment.

[0148] like Figure 5 As shown, the rinsing treatment tank 48 includes an inner tank 201 and an outer tank 202. The inner tank 201 is a box-shaped tank open at the top, which stores rinsing fluid (an example of a processing fluid) inside. A batch formed from multiple wafers W is immersed in the inner tank 201. The outer tank 202 is open at the top and is disposed around the upper part of the inner tank 201. Rinsing fluid overflowing from the inner tank 201 flows into the outer tank 202.

[0149] In addition, the processing tank 48 includes a DIW supply section 205.

[0150] The DIW supply unit 205 includes a DIW supply source 251, a DIW supply line 252, and a flow regulator 253.

[0151] DIW supply source 251 supplies DIW. DIW supply line 252 is connected to DIW supply source 251 and outer tank 202, supplying DIW at a specified temperature from DIW supply source 251 to outer tank 202.

[0152] A flow regulator 253 is installed on the DIW supply line 252 and can adjust the supply amount of DIW to the outer tank 202. The flow regulator 253 consists of an on / off valve, a flow control valve, a flow meter, etc.

[0153] Additionally, the treatment tank 43 includes a circulation section 206. The circulation section 206 circulates the rinsing fluid between the inner tank 201 and the outer tank 202. The circulation section 206 includes a circulation line 261, multiple treatment fluid supply nozzles 262, a filter 263, a heater 264, and a pump 265.

[0154] The circulation line 261 is connected to the outer tank 202 and the inner tank 201. One end of the circulation line 261 is connected to the outer tank 202, and the other end of the circulation line 261 is connected to a plurality of treatment fluid supply nozzles 262 disposed inside the inner tank 201.

[0155] A filter 263, a heater 264, and a pump 265 are installed in the circulation line 261. The filter 263 removes impurities from the flushing fluid flowing in the circulation line 261. The heater 264 heats the flushing fluid flowing in the circulation line 261 to a temperature suitable for flushing treatment. The pump 265 delivers the flushing fluid from the outer tank 202 to the circulation line 261. The filter 263, heater 264, and pump 265 are installed sequentially from the upstream side.

[0156] The circulation unit 206 delivers rinsing fluid from the outer tank 202 to the inner tank 201 via the circulation line 261 and multiple treatment fluid supply nozzles 262. The rinsing fluid delivered to the inner tank 201 overflows from the inner tank 201 and flows back to the outer tank 202. In this way, the rinsing fluid circulates between the inner tank 201 and the outer tank 202.

[0157] Below, refer to Figure 6 The batch impregnation mechanism 49 is described. Figure 6 This is a diagram showing the structure of the batch impregnation mechanism 49 of the first embodiment.

[0158] like Figure 6 As shown, the batch impregnation mechanism 49 includes a support member 301 and a lifting mechanism 302. In addition to the lifting mechanism 302, the batch impregnation mechanism 49 also includes a horizontal movement mechanism; however, for the sake of simplicity, the description of the horizontal movement mechanism is omitted here.

[0159] The support member 301 has a plurality of slots 311, in each of the slots 311 supporting a plurality of wafers W in an upright position from below. Here, see... Figure 7 The structure of the support member 301 will be described. Figure 7 This is a diagram showing the structure of the support member 301 in the first embodiment.

[0160] like Figure 7 As shown, the support member 301 has a plurality of grooves 311 formed at certain intervals (a predetermined pitch P) along the horizontal direction (here, the Y-axis direction). Each groove 311 has a generally inverted trapezoidal shape that narrows as it goes downward. In this way, the support member 301 has a comb-like structure formed by the plurality of grooves 311.

[0161] Multiple wafers W are supported one by one by each slot 311. Thus, the multiple wafers W are supported by the support member 301 in a state where they are arranged at a certain interval (a predetermined pitch P) in the same direction as the arrangement direction of the slots 311 (Y-axis direction).

[0162] The lifting mechanism 302 raises and lowers the support member 301. The lifting mechanism 302 can lower the support member 301 from above the processing tank 48, immersing the plurality of wafers W supported on the support member 301 in the rinsing solution of the processing tank 48. Furthermore, the lifting mechanism 302 can raise the support member 301 to remove the plurality of wafers W supported on the support member 301 from the processing tank 48.

[0163] (Regarding IF area A3)

[0164] In IF region A3, a fourth transport mechanism 55 (an example of a transport unit) is configured. The fourth transport mechanism 55 is, for example, a multi-joint robot arm, which transports wafers W one by one. In addition, the fourth transport mechanism 55 is capable of changing the orientation of the wafers W from a vertical orientation to a horizontal orientation during transport.

[0165] The fourth conveying mechanism 55 takes out a wafer W from the batch immersed in the rinsing tank 48 of the post-processing unit 4_3, changes the orientation of the taken wafer W from a vertical orientation to a horizontal orientation, and then sends it into the liquid processing unit 6 of the single-wafer area A4, which will be described later.

[0166] The fourth transport mechanism 55 is a multi-joint manipulator having multiple arm components rotatably connected to an arm 55a via multiple rotating axes. A retainer 55b is connected to the front end of the arm 55a. The fourth transport mechanism 55 is capable of moving the arm 55a, causing the orientation of the retainer 55b to change between a vertical and a horizontal orientation. The retainer 55b is configured to hold wafers W one by one. Here, see reference... Figure 8 and Figure 9 The structure of retainer 55b will be described. Figure 8 This is a diagram showing the structure of the retaining member 55b in the first embodiment. Figure 8 The vertical orientation retainer 55b is shown in the figure.

[0167] like Figure 8 As shown, the retainer 55b includes a base component 401, a support arm 402, and a clamping component 403.

[0168] The base component 401 is connected to the arm 55a.

[0169] The support arm 402 is fixed to the base component 401. The support arm 402 is as follows: Figure 9 As shown, a support groove 411 is provided at the front end 402a. When the holder 55b is in a vertical position, a wafer W is supported from below in the support groove 411. Figure 9This is an enlarged view showing the front end 402a of the support arm 402 in the first embodiment. The support groove 411 has a generally V-shaped profile that narrows as it descends. The wafer W is housed in the support groove 411 with its wafer-side surface 402b facing the support arm 402, and is thus supported by the support arm 402.

[0170] The clamping member 403 is configured to move forward and backward relative to the base member 401.

[0171] The retainer 55b allows the clamping member 403 to move in and out of the base member 401, and the moving clamping member 403 to abut against the upper edge of the wafer W supported on the support arm 402, thereby retaining the wafer W. Furthermore, the retainer 55b causes the clamping member 403, which abuts against the upper edge of the wafer W, to recede into the interior of the base member 401, thereby releasing the retention of the wafer W.

[0172] Additionally, the retainer 55b has a thickness greater than the specified pitch P and sufficient to be inserted into the processing liquid for rinsing in the processing tank 48. This thickness is sufficient to support the plurality of wafers W supported by the support member 301 within the gap between the inner wall surface of the processing tank 48 and the plurality of wafers W opposite to it. Here, refer to... Figure 10 The thickness of retainer 55b is explained. Figure 10 This is a diagram illustrating the thickness of the retainer 55b in the first embodiment. Figure 10 The image shows a plurality of wafers W supported on a support member 301 immersed in a rinsing solution in a processing tank 48.

[0173] The support member 301 has multiple grooves 311 formed along the Y-axis at a predetermined pitch P. Multiple wafers W are supported on the support member 301 in the rinsing solution of the processing tank 48, arranged at a predetermined pitch P along the Y-axis in the same direction as the grooves 311. A gap 48g is formed between the multiple wafers W supported on the support member 301 in the rinsing solution of the processing tank 48 and the inner wall surface of the processing tank 48 opposite to the multiple wafers W. The retainer 55b has a thickness t greater than the predetermined pitch P and capable of being inserted into the gap 48g. The thickness t of the retainer 55b refers to the thickness of the thickest part of the support arm 402 of the retainer 55b, i.e., the front end 402a. That is, if the width of the gap 48g is set to G, the relationship P < t < G holds. In this embodiment, the predetermined pitch P is 5 mm, therefore the thickness t of the retainer 55b is, for example, 8 mm, and the width G of the gap 48g is, for example, 10 mm or more.

[0174] In this way, the retainer 55b has a thickness t that is larger than the specified pitch P and can be inserted into the gap 48g. Therefore, the fourth transport mechanism 55, which has the retainer 55b, can use the retainer 55b inserted into the gap 48g to remove wafers W one by one from the processing tank 48 and transport them to the liquid processing section 6 of the monolithic region A4. As a result, even when the pitch P of multiple wafers W processed together in the batching region A2 is narrow, the transport of wafers W from the batching region A2 to the monolithic region A4 can be properly performed.

[0175] (Regarding a single area A4)

[0176] Below, refer to Figure 3 The structure of the single-piece area A4 and the output area A5 is explained.

[0177] In the single-piece area A4, a liquid treatment unit 6, a rotary drying unit 7, and a fifth conveying mechanism 8 are arranged. The liquid treatment unit 6 is an example of a first single-piece processing unit, and the rotary drying unit 7 is an example of a second single-piece processing unit. Furthermore, the fifth conveying mechanism 8 is an example of a single-piece conveying mechanism.

[0178] The liquid treatment unit 6, the rotary drying unit 7, and the fifth conveying mechanism 8 are arranged sequentially in a direction orthogonal to the arrangement direction of regions A1 to A5 (Y-axis direction). Specifically, the fifth conveying mechanism 8 is positioned in the center of the single-piece region A4, and the liquid treatment unit 6 is positioned on one side of the fifth conveying mechanism 8 in the Y-axis direction (here, the negative Y-axis side). Furthermore, the rotary drying unit 7 is positioned on the side opposite to the liquid treatment unit 6, separated from the fifth conveying mechanism 8.

[0179] The liquid treatment unit 6 performs liquid treatment on the wafer W conveyed by the fourth conveying mechanism 55. Specifically, the liquid treatment unit 6 forms a liquid film of spin drying solution on the surface of the wafer W. The wafer W with the liquid film formed by the liquid treatment unit 6 is taken out of the liquid treatment unit 6 by the fifth conveying mechanism 8 and conveyed to the spin drying treatment unit 7.

[0180] The fifth transport mechanism 8 includes a holder for holding the wafer W. Furthermore, the fifth transport mechanism 8 is movable in both the horizontal and vertical directions and can rotate about a vertical axis, using the holder to transport the wafer W. Specifically, the fifth transport mechanism 8 transports the wafer W from the liquid processing unit 6 to the rotary drying processing unit 7, and from the rotary drying processing unit 7 to the wafer mounting stage 91 of the delivery area A5 (described later).

[0181] The rotary drying unit 7 performs supercritical rotary drying on the wafer W to which a liquid film has been formed by the liquid treatment unit 6. Specifically, the rotary drying unit 7 dries the wafer W by bringing the wafer W with the liquid film in contact with a supercritical processing fluid.

[0182] The rotary drying processing unit 7 includes: a processing area 71 for supercritical rotary drying; and a transfer area 72 for transferring wafers W between the fifth transport mechanism 8 and the processing area 71.

[0183] Additionally, in single-piece area A4, a supply unit 73 is disposed adjacent to the processing area 71 of the rotary drying unit 7. The supply unit 73 supplies processing fluid to the processing area 71 of the rotary drying unit 7. The supply unit 73 includes: a supply device assembly comprising a flow meter, a flow regulator, a back pressure valve, a heater, etc.; and a housing for housing the supply device assembly. In the first embodiment, the supply unit 73 supplies CO2 as the processing fluid to the rotary drying unit 7.

[0184] The liquid treatment unit 6 includes an inlet 61 and an outlet 62 for a wafer W. The inlet 61 is located opposite the IF region A3 and is used to feed the wafer W into the liquid treatment unit 6 by a fourth transport mechanism 55. The outlet 62 is located opposite the fifth transport mechanism 8 and is used to discharge the wafer W. By setting the inlet 61 and outlet 62 at different locations, efficient feeding and discharging of the wafer W into and out of the liquid treatment unit 6 can be achieved. Furthermore, the outlet 62 can also be located opposite the transfer region 72. In this case, the distance the fifth transport mechanism 8 travels from the liquid treatment unit 6 to the rotary drying unit 7 with the liquid film formed on it is minimized, thus suppressing the rotary drying of the liquid film.

[0185] Here, the structure of the liquid treatment unit 6 and the rotary drying unit 7 will be described. First, referring to... Figure 5 The structure of the liquid treatment unit 6 will be explained. Figure 11 This is a schematic diagram showing the structure of the liquid treatment unit 6 in the first embodiment.

[0186] like Figure 11 As shown, the liquid treatment unit 6 holds the wafer W approximately horizontally using a rotating chuck 505 disposed within the outer chamber 503 forming the processing space, and rotates the wafer W by rotating the rotating chuck 505 about a vertical axis. Furthermore, the liquid treatment unit 6 inserts a nozzle arm 506 above the rotating wafer W and supplies a rotary drying processing liquid, here IPA (isopropyl alcohol), from a nozzle 561 located at the front end of the nozzle arm 506.

[0187] In addition, a liquid supply path 551 is also formed inside the rotary chuck 505 in the liquid processing unit 6. Moreover, the lower surface of the wafer W is also processed using the IPA supplied from the liquid supply path 551.

[0188] The IPA is received by the outer chamber 503 and the inner cup-shaped body 504 disposed within the outer chamber 503, and discharged from the drain port 531 at the bottom of the outer chamber 503 and the drain port 541 at the bottom of the inner cup-shaped body 504. Furthermore, the atmosphere inside the outer chamber 503 is exhausted from the vent port 532 at the bottom of the outer chamber 503.

[0189] While rotating the rotary chuck 505, the liquid treatment unit 6 supplies IPA to the upper and lower surfaces of the wafer W. As a result, the DIW remaining on both sides of the wafer W is replaced with IPA. Afterwards, the liquid treatment unit 6 gradually stops the rotation of the rotary chuck 505.

[0190] Subsequently, with an IPA liquid film formed on its upper surface, the wafer W is transferred from the rotary chuck 505 to the fifth transport mechanism 8, and then discharged from the liquid treatment unit 6 by the fifth transport mechanism 8. The liquid film formed on the wafer W prevents pattern damage due to liquid evaporation (vaporization) on the upper surface of the wafer W during the transport of the wafer W from the liquid treatment unit 6 to the rotary drying unit 7.

[0191] Below, refer to Figure 12 The structure of the rotary drying unit 7 will be explained. Figure 12 This is a schematic diagram showing the structure of the rotary drying treatment unit 7 in the first embodiment.

[0192] like Figure 12 As shown, the rotary drying processing unit 7 includes a main body 601, a holding plate 602, and a cover member 603. An opening 604 for feeding and discharging a wafer W is formed in the housing-shaped main body 601. The holding plate 602 holds the wafer W, the object of processing, in a horizontal direction. The cover member 603 supports the holding plate 602 and seals the opening 604 when the wafer W is fed into the main body 601.

[0193] The main body 601 has a processing space inside that can accommodate a wafer W. Supply ports 605 and 606 and discharge port 607 are provided on its walls. Supply ports 605 and 606 and discharge port 607 are respectively connected to supply flow path and discharge flow path for allowing supercritical fluid to flow in the rotary drying processing unit 7.

[0194] The supply port 605 is located within the housing-shaped body 601 and is connected to the side opposite to the opening 604. Furthermore, the supply port 606 is connected to the bottom surface of the body 601. Additionally, the discharge port 607 is connected to the lower side of the opening 604. Figure 12 The diagram shows two supply ports 605 and 606 and one discharge port 607, but the number of supply ports 605 and 606 and discharge port 607 is not specifically limited.

[0195] Furthermore, inside the main body 601, fluid supply heads 608 and 609 and fluid discharge head 600 are provided. Moreover, in the fluid supply heads 608 and 609, a plurality of supply ports are arranged in the long side direction of the fluid supply heads 608 and 609, and in the fluid discharge head 600, a plurality of discharge ports are arranged in the long side direction of the fluid discharge head 600.

[0196] A fluid supply head 608 is connected to a supply port 605 and is disposed inside a housing-shaped body 601, adjacent to the side opposite to the opening 604. Furthermore, a plurality of supply ports are arranged in the fluid supply head 608 facing the opening 604.

[0197] A fluid supply head 609 is connected to a supply port 606 and is located at the center of the bottom surface inside the housing-shaped main body 601. Furthermore, a plurality of supply ports are arranged in a row within the fluid supply head 609, facing upwards.

[0198] The fluid discharge head 600 is connected to the discharge port 607 inside the shell-shaped body 601, adjacent to the side of the opening 604, and is located below the opening 604. Furthermore, a plurality of discharge ports are arranged in an upward orientation within the fluid discharge head 600.

[0199] Fluid supply heads 608 and 609 supply supercritical fluid into the body 601. Furthermore, fluid discharge head 600 guides the supercritical fluid within the body 601 to the outside of the body 601. Additionally, the supercritical fluid discharged to the outside of the body 601 via fluid discharge head 600 contains IPA liquid, which is supercritical fluid dissolved from the surface of the wafer W in a supercritical state.

[0200] Within the rotary drying unit 7, the IPA liquid formed between the patterns on the wafer W comes into contact with a supercritical fluid under high pressure (e.g., 16 MPa), thereby gradually dissolving in the supercritical fluid, and the spaces between the patterns are gradually replaced by the supercritical fluid. Ultimately, the spaces between the patterns are filled only with supercritical fluid.

[0201] Then, after removing the IPA liquid from between the patterns, the pressure inside the body 601 is reduced from a high-pressure state to atmospheric pressure, and the CO2 changes from a supercritical state to a gaseous state, leaving only gas between the patterns. In this way, the IPA liquid between the patterns is removed, and the spin drying process of the wafer W is completed.

[0202] (Regarding the sending area A5)

[0203] In delivery area A5, a wafer stage 91, a sixth transport mechanism 92, and a second placement section 93 are arranged. The wafer stage 91, the sixth transport mechanism 92, and the second placement section 93 are arranged sequentially along the arrangement direction (X-axis direction) of areas A1 to A5. In addition, the wafer stage 91 is arranged adjacent to the monolithic area A4.

[0204] The wafer W is placed horizontally on the wafer mounting stage 91. The wafer mounting stage 91 has access to both the fifth transport mechanism 8 and the sixth transport mechanism 92.

[0205] The sixth transport mechanism 92 includes a holder for holding the wafer W. Furthermore, the sixth transport mechanism 92 is movable in both the horizontal and vertical directions and rotates about a vertical axis center, using the holder to transport the wafer W between the wafer stage 91 and the second mounting section 93. The second mounting section 93 is capable of mounting multiple carriers C.

[0206] (Regarding control device 11)

[0207] The substrate processing system 1 includes a control device 11. The control device 11 is, for example, a computer, and includes a control unit 12 and a storage unit 13. The storage unit 13 stores programs that control various processes executed in the substrate processing system 1. The control unit 12 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 13.

[0208] Alternatively, the program can be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 13 of the control device 11. Examples of computer-readable storage media include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

[0209] <Specific Operations of Substrate Processing System 1>

[0210] Below, refer to Figure 13 The processing flow executed by the substrate processing system 1 is explained. Figure 13 This is a flowchart illustrating the processing flow performed by the substrate processing system 1 of the first embodiment. Figure 13 Each of the processes shown is executed under the control of the control unit 12.

[0211] like Figure 13 As shown, the substrate processing system 1 uses the second transport mechanism 30 to take out multiple wafers W from two carriers C respectively, and forms a batch from the multiple (e.g., 25) wafers W stored in each carrier C (step S101).

[0212] Reference Figure 2The process of step S101 will be explained below. First, the first transport mechanism 21 removes the carrier C from the first placement section 20 and places it on the carrier placement stage 24. Then, the second transport mechanism 30 removes multiple wafers W from the carrier C placed on the carrier placement stage 24, changes the orientation of the removed multiple wafers W from a horizontal orientation to a vertical orientation, and places the multiple wafers W on the batch holding section 31. By repeating this operation twice, a batch is formed. The multiple wafers W contained in the batch are arranged with their main surfaces facing each other.

[0213] Next, the substrate processing system 1 performs preprocessing on the batches formed (step S102).

[0214] Specifically, the third transport mechanism 50 receives batches from the batch holding unit 31 and delivers them to the batch impregnation mechanism 42 of the preprocessing unit 4_1. Then, the batch impregnation mechanism 42 impregnates the received batches in DHF stored in the processing tank 40. Afterwards, the batch impregnation mechanism 42 removes the batches from the processing tank 40 and impregnates them in DIW stored in the processing tank 41. Thus, the DHF adhering to the wafer W is washed away by the DIW stored in the processing tank 41.

[0215] Next, the substrate processing system 1 performs etching on the batch processed by the preprocessing unit 4_1 (step S103).

[0216] Specifically, the third transport mechanism 50 receives batches from the batch immersion mechanism 42 of the preprocessing unit 4_1 and delivers them to the batch immersion mechanism 45 of the etching processing unit 4_2. Then, the batch immersion mechanism 45 immerses the received batches in the etching solution stored in the processing tank 43. Afterwards, the batch immersion mechanism 45 removes the batches from the processing tank 43 and delivers them to the third transport mechanism 50. Next, the third transport mechanism 50 delivers the batches received from the batch immersion mechanism 45 to the batch immersion mechanism 46. Then, the batch immersion mechanism 46 immerses the received batches in the DIW stored in the processing tank 44. Thus, the etching solution adhering to the wafer W is washed away by the DIW stored in the processing tank 44.

[0217] Next, the substrate processing system 1 cleans the batch processed by the etching processing unit 4_2 (step S104).

[0218] Specifically, the third transport mechanism 50 receives batches from the batch impregnation mechanism 46 and delivers them to the batch impregnation mechanism 49 of the post-processing unit 4_3. Then, the batch impregnation mechanism 49 impregnates the received batches in SC1 stored in the processing tank 47. Afterwards, the batch impregnation mechanism 49 removes the batches from the processing tank 47 and impregnates them in DIW stored in the processing tank 48. Thus, the SC1 attached to the wafer W is washed away by the DIW stored in the processing tank 48.

[0219] Next, the substrate processing system 1 performs liquid film formation processing on the wafer W processed by the post-processing unit 4_3 (step S105). The liquid film formation processing is performed on a per-wafer W unit, not in batches.

[0220] Specifically, the fourth transport mechanism 55 removes a wafer W from the batch held inside the batch dipping mechanism 49 within the processing tank 48. Then, after changing the wafer W from a vertical to a horizontal orientation, the fourth transport mechanism 55 transports the wafer W through the feed inlet 61 (see reference). Figure 3 The rotary chuck 505 (see reference) is delivered to the liquid treatment section 6. Figure 11 ).

[0221] The liquid treatment unit 6 supplies IPA to the upper and lower surfaces of the wafer W while rotating the rotary chuck 505. This replaces the DIW remaining on both sides of the wafer W with IPA. Furthermore, a liquid film of IPA is formed on the upper surface of the wafer W.

[0222] Next, the substrate processing system 1 performs a spin drying process on the wafer W after the liquid film formation process (step S106).

[0223] Specifically, the fifth conveying mechanism 8 takes out the wafer W from the liquid treatment unit 6 via the delivery outlet 62 and delivers the taken-out wafer W to the transfer area 72 (see reference). Figure 3 The retaining plate 602 (refer to) Figure 12 Next, the rotary drying process 7 moves the holding plate 602 to the processing area 71, thereby positioning the wafer W inside the body 601.

[0224] Next, the rotary drying unit 7 supplies supercritical fluid into the main body 601. This causes the pressure within the main body 601 to rise from atmospheric pressure to a predetermined first pressure. Here, the first pressure is a pressure greater than or equal to the critical pressure (approximately 7.2 MPa) at which CO2, as a supercritical fluid, becomes supercritical, for example, around 16 MPa. Therefore, by supplying supercritical fluid into the main body 601, the supercritical fluid within the main body 601 undergoes a phase transition to a supercritical state. Then, the IPA on the wafer W begins to dissolve into this supercritical fluid in its supercritical state.

[0225] Subsequently, by reducing the pressure inside the main body 601 from a high-pressure state to atmospheric pressure, CO2 changes from a supercritical state to a gaseous state, and the spaces between the patterns are occupied only by gas. In this way, the IPA liquid between the patterns is removed, and the spin drying process of the wafer W is completed.

[0226] Next, the substrate processing system 1 performs a delivery process (step S107) to house the spin-dried wafer W in the carrier C.

[0227] Specifically, the rotary drying process 7 moves the holding plate 602 to the transfer area 72, and the fifth transport mechanism 8 receives the rotary-dried wafer W from the holding plate 602. Next, the fifth transport mechanism 8 places the received wafer W onto the wafer mounting stage 91. Then, the sixth transport mechanism 92 removes the wafer W from the wafer mounting stage 91 and stores it in the carrier C placed in the second mounting section 93.

[0228] <Operation of the fourth conveyor mechanism 55>

[0229] Below, refer to Figures 14A to 14F The specific operation of the fourth conveying mechanism 55 described above will be explained. Figures 14A to 14F This diagram illustrates the operation of the fourth conveying mechanism 55 according to the first embodiment. Furthermore, the operation of the arm 55a and the holding member 55b of the fourth conveying mechanism 55 is controlled by the control unit 12.

[0230] After the cleaning process (step S104), the batch impregnation mechanism 49, as shown... Figure 14A As shown, multiple (e.g., 50) of these components are supported by support members 301 within the rinsing solution of the treatment tank 48. Figure 14A For simplicity, only 8 chips (W) are shown in the diagram in standby mode. Support members 301 are provided from multiple (e.g., 50) chips. Figure 14A For simplicity, only eight slots are shown in the diagram. Each slot 311 supports multiple wafers W arranged with their main surfaces M1 facing each other. In this configuration, the control unit 12 inserts the retainer 55b into the gap 48g (see reference). Figure 10 The holder 55b holds the wafer W corresponding to the slot 311 closest to the inner wall surface of the processing slot 48 among the multiple slots 311 where the multiple wafers W are located. Hereinafter, the slot 311 closest to the inner wall surface of the processing slot 48 will be appropriately referred to as "first slot 311a". The wafer W corresponding to the first slot 311a is held by the holder 55b such that its main surface M1 faces the side of the holder 55b opposite to the support arm 402.

[0231] Next, as Figure 14B As shown, the control unit 12 removes the wafer W held in the holding member 55b from the processing tank 48. Then, the control unit 12 changes the removed wafer W from a vertical position to a horizontal position and transports it to the liquid processing unit 6. That is, the control unit 12 changes the wafer W to a horizontal position with its main surface M1 facing upwards and transports the wafer W with its main surface M1 facing upwards to the liquid processing unit 6.

[0232] Next, as Figure 14CAs shown, the control unit 12 causes the retainer 55b to hold the wafer W corresponding to the slot 311 adjacent to the slot 311 (i.e., the first slot 311a) closest to the inner wall surface of the processing slot 48. Hereinafter, the slot 311 adjacent to the first slot 311a will be appropriately referred to as "the second slot 311b". The wafer W corresponding to the second slot 311b is held by the retainer 55b with the main surface M1 facing the support arm 402.

[0233] Next, as Figure 14D As shown, the control unit 12 moves the wafer W held in the holder 55b from the second groove 311b to the groove 311 (i.e., the first groove 311a) closest to the inner wall surface of the processing groove 48. The wafer W moves from the second groove 311b to the first groove 311a, thereby forming a gap 48h between the wafer W after moving to the first groove 311a and the wafer W corresponding to the grooves 311 other than the first groove 311a and the second groove 311b. The width of the gap 48h is twice the predetermined pitch P and is greater than the thickness t of the holder 55b.

[0234] Next, as Figure 14E As shown, the control unit 12 reverses the surface of the holder 55b on the side holding the wafer W (i.e., the surface of the support arm 402 opposite to the wafer W), and inserts the reversed holder 55b into the gap 48h. Then, the control unit 12 causes the holder 55b to hold the wafer W after it has moved to the first groove 311a. The wafer W after it has moved to the first groove 311a is held by the holder 55b with its main surface M1 facing the opposite side of the support arm 402 of the holder 55b.

[0235] Next, as Figure 14F As shown, the control unit 12 removes the wafer W held in the holding member 55b from the processing tank 48. Then, the control unit 12 changes the orientation of the removed wafer W from a vertical orientation to a horizontal orientation and transports it to the liquid processing unit 6. That is, the control unit 12 changes the wafer W to a horizontal orientation with its main surface M1 facing upwards and transports the wafer W with its main surface M1 facing upwards to the liquid processing unit 6.

[0236] Afterwards, control unit 12 repeatedly performed... Figures 14A to 14F The process shown continues until there is no wafer W corresponding to any slot 311 other than the first slot 311a and the second slot 311b.

[0237] In this way, the control unit 12 uses the holding member 55b to transport the multiple wafers W arranged in a state where their main surfaces M1 face each other inside the processing tank 48 to the liquid processing unit 6 one by one. As a result, even when the pitch P of the multiple wafers W arranged in a state where their main surfaces M1 face each other inside the processing tank 48 is narrow, it is possible to properly transport the wafers W from the batching area A2 to the single-wafer area A4.

[0238] As described above, the substrate processing system of the first embodiment (substrate processing system 1, for example) includes a batch processing unit (post-processing unit 4_3, for example), a single-wafer processing unit (liquid processing unit 6, for example), and a transport unit (fourth transport mechanism 55, for example). The batch processing unit processes batches containing multiple substrates (wafers W, for example) at a predetermined pitch (predetermined pitch P, for example). The single-wafer processing unit processes each substrate contained in a batch individually. The transport unit transports substrates one by one from the batch processing unit to the single-wafer processing unit. The batch processing unit includes a processing tank (processing tank 48, for example) and a support member (support member 301, for example). The processing tank stores processing liquid. The support member has multiple slots (slots 311, for example) formed at a predetermined pitch, supporting multiple substrates in an upright state from below in each of the multiple slots. The transport unit includes a holding member (holding member 55b, for example). The retainer has a thickness (for example, thickness t) that is larger than the specified pitch and can be inserted into the processing liquid into the gap (for example, gap 48g) between the multiple substrates supported by the retainer and the inner wall surface of the processing tank opposite the multiple substrates, thus enabling the retainer to hold multiple substrates one by one. Therefore, in a substrate processing system having both a batch processing section and a single-substrate processing section, substrate transport from the batch processing section to the single-substrate processing section can be appropriately performed.

[0239] Furthermore, the substrate processing system of the first embodiment may also include a control unit (for example, control unit 12) for controlling the transport unit. Alternatively, the control unit may insert a retainer into a gap, causing the retainer to hold the substrate corresponding to the slot closest to the inner wall surface of the processing slot (for example, first slot 311a) among the multiple slots containing multiple substrates. Furthermore, the control unit may remove the substrate held in the retainer from the processing slot and transport it to the single-piece processing unit. Furthermore, the control unit may cause the retainer to hold the substrate corresponding to the slot adjacent to the slot closest to the inner wall surface of the processing slot (for example, second slot 311b). Furthermore, the control unit may move the substrate held in the retainer from the adjacent slot to the slot closest to the inner wall surface of the processing slot. Furthermore, the control unit may reverse the surface opposite to the substrate while the retainer is holding the substrate, causing the reversed retainer to hold the substrate moved to the inner wall surface of the processing slot. Furthermore, the control unit may remove the substrate held in the retainer from the processing slot and transport it to the single-piece processing unit.

[0240] Furthermore, in the substrate processing system of the first embodiment, multiple substrates included in a batch may be arranged with their main surfaces facing each other. Alternatively, a support member may support multiple substrates arranged with their main surfaces facing each other from below in each of multiple slots. Thus, even when the pitch of the multiple substrates arranged with their main surfaces facing each other inside the processing slot is narrow, substrate transport from the batch processing unit to the single-substrate processing unit can be appropriately performed.

[0241] (A variation of the first embodiment)

[0242] The following describes a variation of the first embodiment. Figures 15A to 15D This diagram illustrates the operation of the fourth conveying mechanism 55 and the rinsing treatment tank 48 in a modified example of the first embodiment. Furthermore, in the following description, the same reference numerals are used for the parts that have been described previously, and repeated descriptions are omitted.

[0243] like Figure 15A As shown, in the processing tank 48, due to the flow of the rinsing processing fluid formed by the circulation section 206 and the processing fluid supply nozzle 262, the processing fluid stored inside the processing tank 48 sometimes becomes turbulent. When the stored processing fluid in the processing tank 48 turbulent, the multiple wafers W supported on the support member 301 sometimes sway within the processing fluid.

[0244] Therefore, as Figure 15B As shown, before the holding member 55b holds a wafer W in the processing liquid stored inside the processing tank 48, the control unit 12 controls the circulation unit 206 (see reference 206). Figure 5 The control unit 12 stops the supply of treatment fluid from the treatment fluid supply nozzle 262 to the treatment tank 48. Specifically, the control unit 12 stops the pump 265 installed in the circulation unit 206. Afterward, the control unit 12 stands by for a predetermined time until the shaking of the treatment fluid subsides.

[0245] After the specified standby time, such as Figure 15C As shown, the control unit 12 inserts the retainer 55b into the gap 48g (refer to...). Figure 10 ), so that the retainer 55b holds the wafer W corresponding to the first slot 311a.

[0246] Next, as Figure 15D As shown, after the holding member 55b holds a wafer W, the control unit 12 controls the circulation unit 206 to restart the supply of processing liquid from the processing liquid supply nozzle 262 to the processing tank 48. Specifically, the control unit 12 controls the clamping member 403 (see reference 206) provided on the holding member 55b to resume the supply of processing liquid to the processing tank 48. Figure 8 After reaching the upper edge of the wafer W, the supply of processing liquid from the processing liquid supply nozzle 262 to the processing tank 48 begins again.

[0247] Subsequently, the control unit 12 repeatedly... Figures 15B to 15D The processing is shown.

[0248] In this manner, before the holding member 55b holds a wafer W in the processing liquid stored inside the processing tank 48, the control unit 12 controls the circulation unit 206 (an example of the supply unit) to stop the supply of processing liquid to the processing tank 48. As a result, the swaying of the wafer W in the processing tank 48 can be suppressed, and the stability of the wafer W transported using the holding member 55b can be improved.

[0249] (Second Implementation)

[0250] Below, refer to Figures 16-18 The structure of the substrate processing system in the second embodiment will be described. Figure 16 This is a schematic top view of the substrate processing system according to the second embodiment. Furthermore, Figure 17 This is a schematic front view of the first mounting portion according to the second embodiment. Furthermore, Figure 18 This is a schematic front view of the second mounting portion according to the second embodiment. Furthermore, in Figure 16 In the original text, the batching region A2 is omitted. The batching region A2 in the second embodiment has the same structure as the batching region A2 in the first embodiment.

[0251] like Figure 16 As shown, the substrate processing system 1A of the second embodiment has a carrier feeding section 2A in the feeding area A1. The carrier feeding section 2A includes a first mounting section 20A. The first mounting section 20A is disposed adjacent to the batch forming section 3.

[0252] like Figure 17 As shown, the first mounting section 20A includes multiple mounting platforms 26, 27, and 28, and a seventh conveying mechanism 25. The multiple mounting platforms 26, 27, and 28 are arranged on both sides of the seventh conveying mechanism 25. Figure 17 In the example shown, on the positive Y-axis side of the seventh conveyor mechanism 25, two mounting platforms 28, one mounting platform 27, and one mounting platform 26 are arranged sequentially from bottom to top in the height direction (Z-axis direction). Furthermore, in Figure 17 In the example shown, three platforms 28 and one platform 26 are arranged sequentially in the height direction from bottom to top on the negative Y-axis side of the seventh conveying mechanism 25.

[0253] On stage 26, a carrier C transported from the outside is placed. Stage 27 is adjacent to the feed inlet 27a leading to batch forming section 3, and holds a carrier C containing a wafer W to be fed into batch forming section 3. On stage 28, for example, a carrier C that has been fed into batch forming section 3 is temporarily placed.

[0254] The seventh conveying mechanism 25 conveys the carrier C between multiple mounting platforms 26, 27, and 28. Specifically, the seventh conveying mechanism 25 includes a guide rail 25a extending along the height direction (Z-axis direction) and a holder 25b holding the carrier C. The holder 25b is movable along the guide rail 25a.

[0255] The seventh transport mechanism 25 uses a holder 25b to hold the carrier C placed on the mounting stage 26 and transports it to the mounting stage 27 or the mounting stage 28. Multiple wafers W housed in the carrier C placed on the mounting stage 27 are removed from the carrier C by the second transport mechanism 30 located in the batch forming section 3. The empty carrier C is transported by the seventh transport mechanism 25 to the mounting stage 26 or the mounting stage 28.

[0256] In this way, in the substrate processing system 1A of the second embodiment, the first placement unit 20A is arranged adjacent to the batch forming unit 3, so that the proportion of the floor area occupied by the delivery area A1 in the clean room or the like can be suppressed to be small.

[0257] In addition, such as Figure 16 As shown, in the substrate processing system 1A of the second embodiment, an IF region A3 is arranged in a single-wafer region A4. Specifically, the fourth transport mechanism 55 of the IF region A3 is arranged adjacent to the liquid processing unit 6 in the single-wafer region A4.

[0258] Furthermore, in the substrate processing system 1A of the second embodiment, a second mounting section 93A of the delivery area A5 is arranged in the single-wafer area A4. In addition, the fourth transport mechanism 55, the liquid treatment section 6, and the second mounting section 93A are arranged sequentially along the X-axis direction.

[0259] like Figure 18 As shown, the second mounting section 93A is provided with multiple mounting platforms 94, 95, and 96 and an eighth conveying mechanism 97. The multiple mounting platforms 94, 95, and 96 are arranged on both sides of the eighth conveying mechanism 97. Figure 18 In the example shown, three mounting platforms 96 and one mounting platform 95 are arranged sequentially from bottom to top in the height direction (Z-axis direction) on the negative Y-axis side of the eighth conveyor mechanism 97. Furthermore, in Figure 18 In the example shown, two mounting platforms 94 and one mounting platform 95 are arranged sequentially in the height direction from bottom to top on the positive Y-axis side of the eighth conveying mechanism 97.

[0260] On mounting stage 94, adjacent to the delivery outlet 94a from the monolithic region A4, a carrier C for receiving the wafer W delivered from the monolithic region A4 is mounted. On mounting stage 95, an empty carrier C delivered from the outside is mounted. On mounting stage 96, for example, an empty carrier C that was previously mounted on mounting stage 94 is temporarily mounted.

[0261] The eighth conveying mechanism 97 conveys the carrier C between multiple mounting platforms 94, 95, and 96. Specifically, the eighth conveying mechanism 97 includes a guide rail 97a extending along the height direction (Z-axis direction) and a holder 97b holding the carrier C. The holder 97b is movable along the guide rail 97a.

[0262] The eighth transport mechanism 97 uses a holder 97b to hold the empty carrier C placed on the mounting stage 95 and transports it to the mounting stage 94 or the mounting stage 96. The processed wafer W is received in the carrier C placed on the mounting stage 94 by the fifth transport mechanism 8 located in the single-wafer area A4. The carrier C containing the processed wafer W is then transported by the eighth transport mechanism 97 to the mounting stage 95 or the mounting stage 96.

[0263] In this way, in the substrate processing system 1A of the second embodiment, the second mounting part 93A is arranged in the single-piece area A4, so the proportion of the floor area occupied by the delivery area A1 in the clean room or the like can be suppressed to be small.

[0264] (Third Implementation)

[0265] Below, refer to Figure 19 The structure of the substrate processing system in the third embodiment will be described. Figure 19 This is a schematic side view of the substrate processing system according to the third embodiment.

[0266] like Figure 19 As shown, the substrate processing system 1B of the third embodiment, in addition to the structure of the substrate processing system 1 of the second embodiment, also includes a carrier transport area A6. The carrier transport area A6 is, for example, disposed above the feed area A1, the batching area A2, the IF area A3, the single-wafer area A4, and the output area A5.

[0267] A ninth conveying mechanism 700 is arranged in the carrier conveying area A6. The ninth conveying mechanism 700 conveys the carrier C between the first mounting section 20A and the second mounting section 93A.

[0268] The ninth conveying mechanism 700 includes a holding body 701, a guide rail 702, and a moving part 703. The holding body 701 holds the carrier C. The guide rail 702 extends from a position above the first mounting portion 20A to a position above the second mounting portion 93A. The moving part 703 moves the holding body 701 along the guide rail 702.

[0269] The substrate processing system 1B of the third embodiment, for example, uses a ninth transport mechanism 500 to transport an empty carrier C, placed on a placement stage 26, from a first placement section 20A to a second placement section 93A and place it on a placement stage 95 of the second placement section 93A. The movement of the carrier C from the placement stage 26 to the ninth transport mechanism 500 can be performed, for example, by a seventh transport mechanism 25, or by a dedicated transport mechanism (not shown). Similarly, the movement of the carrier C from the ninth transport mechanism 500 to the placement stage 95 can be performed, for example, by an eighth transport mechanism 97, or by a dedicated transport mechanism (not shown). The processed wafer W is received in the empty carrier C transported to the second placement section 93A.

[0270] In addition, the substrate processing system 1B of the third embodiment uses the ninth transport mechanism 500 to transport the carrier C containing the processed wafer W from the second mounting section 93A to the first mounting section 20A and place it on the mounting stage 26 of the first mounting section 20A. The carrier C placed on the mounting stage 26 is then sent to the outside of the substrate processing system 1B.

[0271] According to this substrate processing system 1B, even though the first mounting section 20A and the second mounting section 93A are arranged in different locations, the parts that allow external access to the substrate processing system 1B can be concentrated in one location (e.g., the first mounting section 20A). Therefore, the convenience of the substrate processing system 1B can be improved.

[0272] (Other variations)

[0273] Figure 20 This is a schematic top view of a single area A4 in a modified example. For example... Figure 20 As shown, in a single area A4, there are multiple (here, 2) liquid treatment units 6, multiple (here, 2) rotary drying treatment units 7 and multiple (here, 2) supply units 73.

[0274] One liquid treatment unit 6, one rotary drying unit 7, and one supply unit 73 are respectively arranged on the positive Y-axis side and the negative Y-axis side of the fifth conveying mechanism 8. In addition, the liquid treatment unit 6, the rotary drying unit 7, and the supply unit 73 are arranged along the X-axis direction and are arranged sequentially starting from the negative X-axis side.

[0275] Furthermore, the fourth transport mechanism 55 is positioned in the center of the IF region A3. This allows the fourth transport mechanism 55 to easily access both liquid processing units 6. Additionally, in each liquid processing unit 6, an inlet / outlet 63 is provided opposite to the fifth transport mechanism 8, through which the fourth transport mechanism 55 feeds the wafer W into the liquid processing unit 6.

[0276] Alternatively, multiple liquid treatment units 6 and rotary drying units 7 can be installed in a single area A4. Furthermore, the liquid treatment units 6 and rotary drying units 7 can be arranged along the arrangement direction of areas A1 to A5.

[0277] In the above embodiments, examples of processing performed by the batch processing unit include etching treatment using an etching solution containing phosphoric acid or the like to etch the wafer W; however, the processing performed by the batch processing unit is not limited to the illustrated etching treatment. Furthermore, in the above embodiments, examples of processing performed by the single-wafer processing unit include liquid film formation processing using a spin-drying solution and spin-drying processing using a supercritical fluid; however, the processing performed by the single-wafer processing unit is not limited to these liquid film formation and spin-drying processes. For example, the processing performed by the single-wafer processing unit may also use a processing solution such as a chemical solution, rinsing solution, or functional water to process the wafer W. Furthermore, in the above embodiments, an example of spin-drying processing performed in a spin-drying processing unit 7, which is different from the liquid processing unit 6, is given; however, it is also possible to spin-dry the wafer W by rotating it at high speed in the liquid processing unit 6, for example.

[0278] In the above implementation, an example is given where the feed area A1, batching area A2, IF area A3, single-piece area A4, and output area A5 are configured in a straight line. However, the configuration of areas A1 to A5 is not necessarily a straight line. For example, the feed area A1, batching area A2, IF area A3, single-piece area A4, and output area A5 can be configured in an L-shape or a U-shape.

[0279] Furthermore, in the above embodiment, the example described is a batch of multiple wafers W arranged with their main surfaces facing each other, but the disclosed technology is not limited to this. For example, the batch of multiple wafers W can also be arranged with their main surfaces facing one direction. In this case, the support member 301 can support the multiple wafers W arranged with their main surfaces facing one direction from below each of the multiple slots 311. In this case, the holding member 55b sequentially holds the multiple wafers W supported on the support member 301 from opposite sides of their main surfaces and sequentially transports them to the single-wafer processing unit (liquid processing unit 6).

[0280] Additionally, for example, multiple wafers W forming a batch are arranged in either a "first state" where their main surfaces face each other or a "second state" where their main surfaces face each other, according to the processing content of the batch processing unit (for example, the post-processing unit 4_3). In this case, the substrate transport process from the batch processing unit to the single-wafer processing unit can be changed according to the arrangement state of the multiple wafers W included in a batch. Specifically, the control unit 12 acquires arrangement information indicating the arrangement state of the multiple wafers W included in a batch. For example, the arrangement information is stored in the storage unit 13, and the control unit 12 acquires the arrangement information from the storage unit 13. When the arrangement information indicates the first state, the control unit 12 causes the fourth transport mechanism 55 to perform the first substrate transport process, and when the arrangement information indicates the second state, the control unit 12 causes the fourth transport mechanism 55 to perform the second substrate transport process. Here, the first substrate transport process is the same as the substrate transport process in the first embodiment described above (see...). Figures 14A to 14F Similarly, the second transport process includes the following process: holding the multiple wafers W supported on the support member 301 one by one from the opposite side of the main surface by the holding member 55b and transporting them to the single-wafer processing unit (liquid processing unit 6).

[0281] The embodiments disclosed herein are illustrative in all respects and should not be considered limiting. In fact, the above-described embodiments can be implemented in various ways. Furthermore, the above-described embodiments can be omitted, substituted, or modified in various ways without departing from the appended claims and their spirit.

Claims

1. A substrate processing system, characterized in that, include: A batch processing unit that processes batches containing multiple substrates at a specified pitch together; A single-wafer processing unit that processes each substrate in the batch; and A transport unit that transports the substrates one by one from the batch processing unit to the single-wafer processing unit. The batch processing unit includes: A treatment tank for storing the treatment solution; and A support member having a plurality of grooves formed at the specified pitch, wherein a plurality of substrates in an upright position are supported from below in each of the plurality of grooves. The conveying section has a retainer capable of holding multiple substrates one by one. The retainer has a thickness greater than the predetermined pitch and is capable of being inserted into the gap between the multiple substrates supported by the retainer and the inner wall surface of the processing tank opposite to the multiple substrates in the processing liquid. It also includes a control unit for controlling the conveying unit. The control unit, The retainer is inserted into the gap so that it holds the substrate corresponding to the slot closest to the inner wall of the processing slot among the plurality of slots where the substrates are located. The substrate held in the holder is removed from the processing tank and transported to the single-wafer processing unit. The retainer holds the substrate corresponding to the slot adjacent to the slot closest to the inner wall of the processing slot. The substrate held in the holder is moved from the adjacent slot to the slot closest to the inner wall of the processing slot. When the retainer is in place, the surface on the side opposite the substrate is reversed, and the reversed retainer holds the substrate after it has moved to the groove closest to the inner wall of the processing groove. The substrate held in the holder is removed from the processing tank and transported to the single-wafer processing unit.

2. The substrate processing system as described in claim 1, characterized in that: The batch contains multiple substrates arranged with their main faces facing each other. The support member supports from below a plurality of substrates arranged with their main faces facing each other in each of the plurality of slots.

3. The substrate processing system as described in claim 1, characterized in that: The multiple substrates included in the batch are arranged according to the processing content of the batch processing unit, either in a first state where their main surfaces face each other or in a second state where their main surfaces face one direction. The substrate processing system also includes a control unit for controlling the conveying unit. The control unit acquires arrangement information indicating the arrangement state of the plurality of substrates included in the batch. If the arrangement information indicates the first state, the control unit performs a first substrate transport process; if the arrangement information indicates the second state, the control unit performs a second substrate transport process. The first substrate transport process includes the following processes: The retainer is inserted into the gap so that it holds the substrate corresponding to the slot closest to the inner wall of the processing slot among the plurality of slots where the substrates are located. The substrate held in the holder is removed from the processing tank and transported to the single-wafer processing unit. The retainer holds the substrate corresponding to the slot adjacent to the slot closest to the inner wall of the processing slot. The substrate held in the holder is moved from the adjacent slot to the slot closest to the inner wall of the processing slot. When the retainer is in place, the surface on the side opposite the substrate is reversed, and the reversed retainer holds the substrate after it has moved to the groove closest to the inner wall of the processing groove. The substrate held in the holder is removed from the processing tank and transported to the single-wafer processing unit. The second substrate transport process includes the following processes: The holder sequentially holds the multiple substrates supported by the support from the opposite side of the main surface and transports them sequentially to the single-piece processing unit.

4. The substrate processing system as described in any one of claims 1 to 3, characterized in that, Also includes: A supply unit for supplying fluid to the interior of the processing tank; and A control unit that controls the supply unit. Before the holder holds one of the substrates in the processing liquid stored inside the processing tank, the control unit controls the supply unit to stop the supply of fluid to the processing tank, and after the holder holds one of the substrates, the control unit controls the supply unit to resume the supply of fluid to the processing tank.

5. A substrate transport method, characterized in that: The substrate delivery method is a substrate delivery method in a substrate processing system. The substrate processing system includes: A batch processing unit that processes batches containing multiple substrates at a specified pitch together; A single-wafer processing unit that processes each substrate in the batch; and A transport unit that transports the substrates one by one from the batch processing unit to the single-wafer processing unit. The batch processing unit includes: Treatment tank for storing treatment fluid; and A support member having a plurality of grooves formed at the specified pitch, wherein a plurality of substrates in an upright position are supported from below in each of the plurality of grooves. The conveying section has a retainer capable of holding multiple substrates one by one. The retainer has a thickness greater than the predetermined pitch and is capable of being inserted into the gap between the multiple substrates supported by the retainer and the inner wall surface of the processing tank opposite to the multiple substrates in the processing liquid. The substrate delivery method includes the following processes: The retainer is inserted into the gap within the treatment liquid, such that the retainer holds the substrate corresponding to the slot closest to the inner wall of the treatment slot among the plurality of slots. The substrate held in the holder is removed from the processing tank and transported to the single-wafer processing unit. The retainer holds the substrate corresponding to the slot adjacent to the slot closest to the inner wall of the processing slot. The substrate held in the holder is moved from the adjacent slot to the slot closest to the inner wall of the processing slot. When the retainer is in place, the surface of the side opposite the substrate is reversed, and the reversed retainer holds the substrate that has been moved to the groove closest to the inner wall of the processing groove. The substrate held in the holder is removed from the processing tank and transported to the single-wafer processing unit.

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