Solid-state imaging device

Abstract

A solid-state imaging device is provided. The solid-state imaging device includes a plurality of photoelectric conversion elements. The solid-state imaging device also includes a modulation layer disposed above the photoelectric conversion elements, and the modulation layer has a plurality of modulation sections. The modulation layer includes a plurality of first sub-layers and a plurality of second sub-layers having different refractive indexes. From a top view of the modulation layer, the modulation sections form a first group and a second group adjacent to the first group. An arrangement of the first sub-layers and the second sub-layers in the first group is different from an arrangement of the first sub-layers and the second sub-layers in the second group.

Description

Technical Field

[0001] This disclosure relates to an imaging device, and more particularly to a solid-state imaging device comprising a modulation layer that reduces petal flare. Background Technology

[0002] Solid-state imaging devices (e.g., complementary metal-oxide-semiconductor (CMOS) imaging devices) are widely used in various image capturing devices, such as digital still cameras, digital video cameras, and similar devices. Signal charges can be generated based on the amount of light received in the photosensitive part (e.g., photoelectric conversion element) of the solid-state imaging device. Furthermore, the signal charges generated in the photosensitive part can be transmitted and amplified, thereby obtaining an image signal.

[0003] Traditional solid-state imaging devices are prone to grating diffraction problems (e.g., surface diffraction), which can lead to chromatic aberration (petal-shaped light spots) and ghosting in the acquired images. Therefore, the design of solid-state imaging devices still faces various challenges. Summary of the Invention

[0004] In some embodiments of this disclosure, the solid-state imaging device includes a modulation layer that prevents surface diffraction, thereby improving the quality of image signals from the photoelectric conversion elements of the solid-state imaging device.

[0005] According to some embodiments of this disclosure, a solid-state imaging device is provided. The solid-state imaging device includes a plurality of photoelectric conversion elements. The solid-state imaging device also includes a modulation layer disposed above the photoelectric conversion elements, and the modulation layer has a plurality of modulation segments. The modulation layer includes a plurality of first sublayers and a plurality of second sublayers with different refractive indices. From a top view of the modulation layer, the modulation segments form a first group and a second group adjacent to the first group. The arrangement of the first and second sublayers in the first group differs from the arrangement of the first and second sublayers in the second group.

[0006] In some embodiments, from a top view of the modulation layer, each first sublayer occupies one of the modulation segments, and each second sublayer occupies the other of the modulation segments.

[0007] In some embodiments, from a top view of the modulation layer, the first sublayer is arranged diagonally, and the second sublayer is arranged diagonally.

[0008] In some embodiments, from a top view of the modulation layer, each modulation segment includes one of the first sublayers and one of the second sublayers.

[0009] In some embodiments, from a top view of the modulation layer, each first sublayer has a first width in a first direction and a second width in a second direction, the second direction being different from the first direction; each second sublayer has a third width in the first direction and a fourth width in the second direction; and each modulation segment has a modulation width in both the first and second directions.

[0010] In some embodiments, from a top view of the modulation layer, the ratio of the first width to the modulation width or the ratio of the second width to the modulation width is greater than 0.25 and less than 1.

[0011] In some embodiments, from a top view of the modulation layer, the ratio of the third width to the modulation width or the ratio of the fourth width to the modulation width is greater than 0.25 and less than 1.

[0012] In some embodiments, from the top view of the modulation layer, the ratio of the first width to the modulation width and the ratio of the second width to the modulation width are both greater than 0.25 and less than 1.

[0013] In some embodiments, in a top view of the modulation layer, the distance between the center of the first sublayer and the center of the corresponding modulation segment is between 0 and 0.5 times the difference between the modulation width and the first width, or between 0 and 0.5 times the difference between the modulation width and the second width.

[0014] In some embodiments, in a top view of the modulation layer, one of the first sublayer and the second sublayer is triangular in shape.

[0015] In some embodiments, from a top view of the modulation layer, the second group is adjacent to the first group in a first direction, and the modulation segment further forms a third group adjacent to the first group and a fourth group adjacent to the second group in a second direction, and the second direction is different from the first direction.

[0016] In some embodiments, the arrangement of the first and second sub-layers in the third group is different from the arrangement of the first and second sub-layers in the first group.

[0017] In some embodiments, the arrangement of the first and second sub-layers in the fourth group is different from the arrangement of the first and second sub-layers in the second group.

[0018] In some embodiments, each first group and each second group contains m×n modulation segments, where m and n are positive integers greater than or equal to 2.

[0019] In some embodiments, from a cross-sectional view of the modulation layer, the ratio of the height in the first sublayer to the height of each modulation segment, or the ratio of the height in the second sublayer to the height of each modulation segment, is between 0.5 and 1.

[0020] In some embodiments, the solid-state imaging device further includes a color filter layer disposed between the photoelectric conversion element and the modulation layer.

[0021] In some embodiments, the solid-state imaging device further includes a plurality of light-concentrating structures disposed on the modulation layer.

[0022] The beneficial effect of this invention is that the solid-state imaging device includes a modulation layer having multiple modulation segments. From a top view of the modulation layer, the modulation segments can form at least two groups (e.g., a first group and a second group). These groups can have different arrangements of two sublayers (with different refractive indices), thereby forming a mosaic pattern. This mosaic pattern can cause phase modulation, which can prevent surface diffraction, thereby improving the quality of the image signal from the photoelectric conversion element of the solid-state imaging device. Attached Figure Description

[0023] The embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that the various feature components are not drawn to scale and are only used for illustrative purposes. In fact, the dimensions of the components may be enlarged or reduced to clearly show the technical features of the embodiments of this disclosure.

[0024] Figure 1 This shows a partial cross-sectional view of a solid-state imaging apparatus according to some embodiments of the present disclosure.

[0025] Figure 2 This shows a partial top view of a modulation layer according to an embodiment of the present disclosure.

[0026] Figure 3 This shows a partial top view of a modulation layer according to another embodiment of the present disclosure.

[0027] Figure 4 This shows a partial top view of a modulation layer according to another embodiment of the present disclosure.

[0028] Figure 5 This shows a partial top view of a modulation layer according to another embodiment of the present disclosure.

[0029] Figure 6 This shows a partial top view of a modulation layer according to another embodiment of the present disclosure.

[0030] Figure 7 This shows a partial cross-sectional view of a solid-state imaging apparatus according to some embodiments of the present disclosure.

[0031] Figure 8This shows a partial cross-sectional view of a solid-state imaging apparatus according to some embodiments of the present disclosure.

[0032] The attached figures are labeled as follows:

[0033] 100, 102, 104: Solid-state imaging devices

[0034] 10: Semiconductor substrate

[0035] 10B: Backside surface

[0036] 10F: Front surface

[0037] 11: Photoelectric conversion element

[0038] 15: Wiring Layer

[0039] 17: High dielectric constant film

[0040] 19: Buffer layer

[0041] 20: Modulation Layer

[0042] 20-1: First Group

[0043] 20-2: Second Group

[0044] 20-3: Third Group

[0045] 20-4: Group 4

[0046] 20S: Modulation Section

[0047] 20W: Modulation Width

[0048] 20H: Altitude

[0049] 21,21',21”: First sublayer

[0050] 21H: Altitude

[0051] 21X,21X',21X”: First width

[0052] 21Y: Second width

[0053] 22: Second Sublayer

[0054] 22H: Altitude

[0055] 22X: Third width

[0056] 22Y: Fourth Width

[0057] 30: Concentrating structure

[0058] 40: Color filter layer

[0059] 40S: Color Filter Section

[0060] A-A': Section line

[0061] X, Y, Z: Coordinate axes Detailed Implementation

[0062] The following disclosure provides many different embodiments or examples to implement the various features of this application. The following disclosure describes specific examples of the various components and their arrangements to simplify the explanation. Of course, these specific examples are not intended to be limiting. For example, if the embodiments of this disclosure describe a first feature formed on or above a second feature, it means that it may include embodiments where the first feature and the second feature are in direct contact, or it may include embodiments where an additional feature is formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact.

[0063] It should be understood that additional operational steps may be performed before, during, or after the method, and in other embodiments of the method, some operational steps may be replaced or omitted.

[0064] Furthermore, spatially related terms may be used, such as "below," "below," "lower," "above," "above," "higher," and similar terms. These spatially related terms are used to facilitate the description of the relationship between one or more elements or features in the illustrations and to one or more other elements or features. These spatially related terms include different orientations of the device in use or operation, as well as the orientations described in the accompanying drawings. When the device is turned to a different orientation (rotated 90 degrees or other orientations), the spatially related adjectives used will also be interpreted according to the orientation after the turn.

[0065] In instruction manuals, the terms "about," "approximately," and "roughly" typically indicate within 20%, 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. The quantities given here are approximate; that is, even without specific mention of "about," "approximately," or "roughly," their meaning is implied.

[0066] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in embodiments of this disclosure.

[0067] The different embodiments disclosed below may reuse the same reference numerals and / or designations. These repetitions are for the purpose of simplicity and clarity and are not intended to limit the specific relationship between the different embodiments and / or structures discussed.

[0068] Based on the direction of light incident on the light receiving unit, solid-state imaging devices can be broadly classified into two types. One is the front-side illuminated (FSI) imaging device, which receives light incident on the front side of the semiconductor substrate, and a wiring layer for the readout circuit is formed on the front side of the semiconductor substrate. The other is the back-side illuminated (BSI) imaging device, which receives light incident on the back side of the semiconductor substrate, and no wiring layer is formed on the back side of the semiconductor substrate.

[0069] Figure 1 This diagram shows a partial cross-sectional view of a solid-state imaging apparatus 100 according to some embodiments of the present disclosure. It should be noted that, for simplicity, Figure 1 Some components of the solid-state imaging device 100 may be omitted. In some embodiments, the solid-state imaging device 100 may be a complementary metal-oxide-semiconductor (CMOS) imaging device or a charge-coupled device (CCD) imaging device, but the embodiments disclosed herein are not limited thereto.

[0070] like Figure 1 As shown, a semiconductor substrate 10 is provided, such as a wafer or chip. (Refer to...) Figure 1 The solid-state imaging device 100 includes a plurality of photoelectric conversion elements 11. The photoelectric conversion elements 11 may be, for example, photodiodes and may be formed in the semiconductor substrate 10, but the embodiments disclosed herein are not limited thereto.

[0071] In some embodiments, the photoelectric conversion elements 11 in the semiconductor substrate 10 may be isolated from each other via an isolation structure (not shown), such as a shallow trench isolation (STI) region or a deep trench isolation (DTI) region. Trenches may be formed in the semiconductor substrate 10 using an etching process, and the trenches may be filled with an insulating or dielectric material to form the isolation structure.

[0072] In some embodiments, the photoelectric conversion element 11 is formed on the back surface 10B of the semiconductor substrate 10, and the wiring layer 15 is formed on the front surface 10F of the semiconductor substrate 10, but this disclosure is not limited thereto. The wiring layer 15 may be an interconnect structure containing multiple wires and vias buried in multiple dielectric layers, and the wiring layer 15 may further contain various circuits required by the solid-state imaging device 100. Incident light can illuminate the back surface 10B and be received by the photoelectric conversion element 11.

[0073] In this embodiment, the incident light illuminates the side of the back surface 10B and is received by the photoelectric conversion element 11. Figure 1 The solid-state imaging device 100 shown may be referred to as a back-illuminated (BSI) imaging device, but this disclosure is not limited thereto. In some other embodiments, the solid-state imaging device may be a front-illuminated (FSI) imaging device. For an FSI imaging device, Figure 1 The semiconductor substrate 10 and wiring layer 15 shown can be flipped upside down. In the FSI imaging apparatus, incident light illuminates the side of the front surface 10F, passes through the wiring layer 15, and is then received by the photoelectric conversion element 11 formed on the back surface 10B of the semiconductor substrate 10. The path distance of incident light through each layer to reach the photoelectric conversion element 11 in the FSI imaging apparatus is greater than the path distance of incident light through each layer to reach the photoelectric conversion element 11 in the BSI imaging apparatus.

[0074] like Figure 1 As shown, in some embodiments, a high-k dielectric film 17 may be formed on the back surface 10B of the semiconductor substrate 10 and cover the photoelectric conversion element 11. The material of the high-k dielectric film 17 may include hafnium oxide (HfO2), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), tantalum pentoxide (Ta2O5), or other suitable high-k dielectric materials or combinations thereof, but this disclosure is not limited to these embodiments. The high-k dielectric film 17 may be formed by a deposition process. The deposition process may be, for example, chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), or other deposition techniques. The high-k dielectric film 17 may have a high refractive index and light absorption capability.

[0075] like Figure 1As shown, in some embodiments, the buffer layer 19 may be formed on the high dielectric constant film 17. The material of the buffer layer 19 may include silicon oxide, silicon nitride, silicon oxynitride, or other suitable insulating materials or combinations thereof, but this disclosure is not limited thereto. The buffer layer 19 may be formed by a deposition process. The deposition process may be, for example, spin coating, chemical vapor deposition, flowable chemical vapor deposition (FCVD), plasma-enhanced chemical vapor deposition, physical vapor deposition (PVD), or other deposition techniques.

[0076] Reference Figure 1 The solid-state imaging device 100 includes a modulation layer 20, which is disposed above the photoelectric conversion element 11. Figure 1 In the illustrated embodiment, the modulation layer 20 is disposed above the buffer layer 19. For example... Figure 1 As shown, the modulation layer 20 has (or can be divided into) multiple modulation segments 20S. In Figure 1 In the illustrated embodiment, each modulation segment 20S corresponds to one photoelectric conversion element 11, but this disclosure is not limited thereto. In some other embodiments, each modulation segment 20S may correspond to at least two photoelectric conversion elements 11.

[0077] Furthermore, the modulation layer 20 includes a plurality of first sublayers 21 and a plurality of second sublayers 22. In embodiments of this disclosure, the materials of the first sublayers 21 and the second sublayers 22 may include transparent materials, and the first sublayers 21 and the second sublayers 22 have different refractive indices. For example, the refractive index of the first sublayer 21 may be between 1.5 and 2.0, while the refractive index of the second sublayer 22 may be between 1.0 and 2.0, but embodiments of this disclosure are not limited thereto. The modulation layer 20 may be formed by a deposition process. Examples of deposition processes have been described above and will not be repeated here.

[0078] Reference Figure 1The solid-state imaging device 100 may further include a plurality of condensing structures 30 disposed on the modulation layer 20. In some embodiments, the condensing structure 30 may be used to converge incident light. In some embodiments, the material of the condensing structure 30 may include glass, epoxy resin, silicone resin, polyurethane, other suitable materials or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the condensing structure 30 may be formed by a photoresist reflow method, a hot embossing method, other suitable methods or combinations thereof, but this disclosure is not limited thereto. In some embodiments, the steps of forming the condensing structure 30 may include spin coating, photolithography, etching, other suitable processes or combinations thereof, but this disclosure is not limited thereto.

[0079] In some embodiments, the light-concentrating structure 30 may be a microlens structure, such as a semi-convex lens structure or a convex lens structure, but the embodiments disclosed herein are not limited thereto. In some other embodiments, the light-concentrating structure 30 may be a micro-pyramid structure (e.g., a cone, a square pyramid, etc.), or it may be a micro-trapezoidal structure (e.g., a flat-topped cone, a flat-topped square pyramid, etc.). Alternatively, the light-concentrating structure 30 may be a gradient-index structure.

[0080] exist Figure 1 In the illustrated embodiment, each focusing structure 30 corresponds to one modulation segment 20S, but this disclosure is not limited thereto. In some other embodiments, each focusing structure 30 may correspond to at least two modulation segments 20S.

[0081] Figure 2 This shows a partial top view of a modulation layer 20 according to an embodiment of the present disclosure. For example, Figure 1 The modulation layer 20 shown can be along Figure 2 The cross-sectional view shown is cut by section line A-A', but the embodiments disclosed herein are not limited thereto. (Refer to...) Figure 1 and Figure 2 The modulation segment 20S forms a first group 20-1 and a second group 20-2 adjacent to the first group 20-1 in the first direction (i.e., the X direction), and the arrangement of the first sub-layer 21 and the second sub-layer 22 in the first group 20-1 is different from the arrangement of the first sub-layer 21 and the second sub-layer 22 in the second group 20-2.

[0082] like Figure 2 As shown, in some embodiments (in the first group 20-1), each first sublayer 21 may occupy one modulation segment 20S, while each second sublayer 22 may occupy another modulation segment 20S. More specifically, the first group 20-1 comprises four modulation segments 20S, two of which are occupied by the first sublayer 21, and the other two by the second sublayer 22, but this disclosure is not limited thereto. In some other embodiments, each modulation segment 20S may comprise both the first sublayer 21 and the second sublayer 22.

[0083] like Figure 2 As shown, in some embodiments (in the first group 20-1), the first sub-layer 21 may be arranged diagonally, and the second sub-layer 22 may be arranged diagonally, but this disclosure is not limited thereto. In some other embodiments, the first sub-layer 21 may be arranged adjacent to each other, and the second sub-layer 22 may be arranged adjacent to each other.

[0084] like Figure 2 As shown, in some embodiments (in the second group 20-2), each modulation segment 20S may include a first sublayer 21 and a second sublayer 22. More specifically, in the second group 20-2, each first sublayer 21 has a first width 21X in a first direction (i.e., the X direction) and a second width 21Y in a second direction (i.e., the Y direction), the second direction being different from the first direction. Each second sublayer 22 has a third width 22X in the first direction (i.e., the X direction) and a fourth width 22Y in the second direction (i.e., the Y direction), and each modulation segment 20S has a modulation width 20W in both the first direction (i.e., the X direction) and the second direction (i.e., the Y direction).

[0085] like Figure 2 As shown, in some embodiments (in the second group 20-2), the ratio of the first width 21X to the modulation width 20W can be greater than 0.25 and less than 1, the ratio of the third width 22X to the modulation width 20W can be greater than 0.25 and less than 1, and the second width 21Y, the fourth width 22Y and the modulation width 20W can be equal, but the embodiments disclosed herein are not limited thereto.

[0086] In some embodiments, the modulation layer 20 can be considered as a color filter layer of the solid-state imaging device 100, but the embodiments disclosed herein are not limited thereto. In some embodiments, the first group 20-1 and the second group 20-2 have different arrangements of the first sub-layers 21 and the second sub-layers 22, such that the first group 20-1 and the second group 20-2 can form a mosaic pattern. This mosaic pattern can cause phase modulation, which can prevent surface diffraction and thereby improve the quality of the image signal from the photoelectric conversion element 11 of the solid-state imaging device 100. In some embodiments, the modulation layer 20 may have multiple mosaic patterns (i.e., multiple first groups 20-1 and second groups 20-2).

[0087] In some embodiments, such as Figure 2 As shown, the second group 20-2 is adjacent to the first group 20-1 in the first direction (i.e., the X direction), and the modulation segment 20S can further form a third group 20-3 adjacent to the first group 20-1 and a fourth group 20-4 adjacent to the second group 20-2 in the second direction (i.e., the Y direction).

[0088] In some embodiments, the arrangement of the first sub-layer 21 and the second sub-layer 22 in the third group 20-3 is different from the arrangement of the first sub-layer 21 and the second sub-layer 22 in the first group 20-1, and also different from the arrangement of the first sub-layer 21 and the second sub-layer 22 in the second group 20-2, but this disclosure is not limited thereto. For example, the first width 21X' of the first sub-layer 21' in the third group 20-3 may be greater than the first width 21X of the first sub-layer 21 in the second group 20-2, but this disclosure is not limited thereto.

[0089] In some embodiments, the arrangement of the first sub-layer 21 and the second sub-layer 22 in the fourth group 20-4 is different from the arrangement of the first sub-layer 21 and the second sub-layer 22 in the first group 20-1, different from the arrangement of the first sub-layer 21 and the second sub-layer 22 in the second group 20-2, and different from the arrangement of the first sub-layer 21 and the second sub-layer 22 in the third group 20-3. For example, the first width 21X” of the first sub-layer 21” in the fourth group 20-4 may be greater than the first width 21X’ of the first sub-layer 21’ in the third group 20-3, but the embodiments disclosed herein are not limited thereto.

[0090] Similarly, in some embodiments, the first group 20-1, the second group 20-2, the third group 20-3, and the fourth group 20-4 have different arrangements of first sublayers 21 and second sublayers 22, such that the first group 20-1, the second group 20-2, the third group 20-3, and the fourth group 20-4 can form a damascene pattern. This damascene pattern can cause phase modulation, which can prevent surface diffraction and thus improve the quality of the image signal from the photoelectric conversion element 11 of the solid-state imaging device 100. In some embodiments, the modulation layer 20 may have multiple damascene patterns (i.e., multiple first groups 20-1, second groups 20-2, third groups 20-3, and fourth groups 20-4).

[0091] Figure 3 This shows a partial top view of a modulation layer 20 according to another embodiment of the present disclosure. Similarly, modulation segments 20S may form a first group 20-1, a second group 20-2, a third group 20-3, and a fourth group 20-4. For example... Figure 3 As shown, the second group 20-2 is adjacent to the first group 20-1 in the first direction (i.e., the X direction), the third group 20-3 is adjacent to the first group 20-1 in the second direction (i.e., the Y direction), and the fourth group 20-4 is adjacent to the second group 20-2 in the second direction (i.e., the Y direction).

[0092] like Figure 3 As shown, in some modulation segments 20S (e.g., modulation segment 20S1), the ratio of the first width 21X to the modulation width 20W can be greater than 0.25 and less than 1, the ratio of the third width 22X to the modulation width 20W can be greater than 0.25 and less than 1, and the second width 21Y, the fourth width 22Y, and the modulation width 20W can be equal. In other modulation segments 20S (e.g., modulation segment 20S2), the first width 21X, the third width 22X, and the modulation width 20W can be equal, the ratio of the second width 21Y to the modulation width 20W can be greater than 0.25 and less than 1, and the ratio of the fourth width 22Y to the modulation width 20W can be greater than 0.25 and less than 1.

[0093] Figure 4 This shows a partial top view of a modulation layer 20 according to another embodiment of the present disclosure. Similarly, modulation segments 20S may form a first group 20-1, a second group 20-2, a third group 20-3, and a fourth group 20-4. For example... Figure 4 As shown, the second group 20-2 is adjacent to the first group 20-1 in the first direction (i.e., the X direction), the third group 20-3 is adjacent to the first group 20-1 in the second direction (i.e., the Y direction), and the fourth group 20-4 is adjacent to the second group 20-2 in the second direction (i.e., the Y direction).

[0094] like Figure 4 As shown, in some modulation segments 20S (e.g., modulation segment 20S3), the shape of the first sublayer 21 and / or the second sublayer 22 may be triangular, but this embodiment is not limited thereto. In some other embodiments, the shape of the first sublayer 21 and / or the second sublayer 22 may be other polygons (e.g., pentagons), circles, or irregular shapes.

[0095] In the foregoing embodiments, each of the first group 20-1, the second group 20-2, the third group 20-3 and the fourth group 20-4 contains 2×2 modulation segments, but the embodiments disclosed herein are not limited thereto.

[0096] Figure 5 This shows a partial top view of a modulation layer 20 according to another embodiment of the present disclosure. In this embodiment, modulation segments 20S may form a first group 20-1 and a second group 20-2. For example... Figure 5 As shown, the second group 20-2 is adjacent to the first group 20-1 in the second direction (i.e., the Y direction).

[0097] exist Figure 5 In the illustrated embodiment, each of the first group 20-1 and the second group 20-2 contains 4×2 modulation segments, but this disclosure is not limited thereto. In some embodiments, each of the first group 20-1 and the second group 20-2 (and / or the third group 20-3 and the fourth group 20-4) may contain m×n modulation segments, where m and n are positive integers greater than or equal to 2.

[0098] Figure 6 This shows a partial top view of a modulation layer 20 according to another embodiment of the present disclosure. Similarly, modulation segments 20S may form a first group 20-1, a second group 20-2, a third group 20-3, and a fourth group 20-4. For example... Figure 6 As shown, the second group 20-2 is adjacent to the first group 20-1 in the first direction (i.e., the X direction), the third group 20-3 is adjacent to the first group 20-1 in the second direction (i.e., the Y direction), and the fourth group 20-4 is adjacent to the second group 20-2 in the second direction (i.e., the Y direction).

[0099] like Figure 6 As shown, in some modulation segments 20S (e.g., modulation segment 20S4), the ratio of the first width 21X to the modulation width 20W and the ratio of the second width 21Y to the modulation width 20W can both be greater than 0.25 and less than 1. In this embodiment, the shape of the first sublayer 21 in modulation segment 20S4 can be rectangular (e.g., the first width 21X and the second width 21Y are equal), but this embodiment is not limited thereto.

[0100] In some embodiments, the distance d between the center of the first sub-layer 21 and the center of the modulation section 20S4 may be between 0 and 0.5 times the difference between the modulation width 20W and the first width 21X, or between 0 and 0.5 times the difference between the modulation width 20W and the second width 21Y (i.e., 0 < d < (20W - 21X) / 2 or 0 < d < (20W - 21Y) / 2). That is, the center of the first sub-layer 21 in the modulation section 20S4 may have an extra-shift relative to the center of the corresponding photoelectric conversion element 11, but the embodiments of the present disclosure are not limited thereto.

[0101] Figure 7 Shows a partial cross-sectional view of a solid-state imaging device 102 according to some embodiments of the present disclosure. Similarly, for simplicity, Figure 7 some components of the solid-state imaging device 102 may be omitted.

[0102] Figure 7 The shown solid-state imaging device 102 has a structure similar to Figure 1 the shown solid-state imaging device 100. As Figure 7 shown, different from Figure 1 the shown solid-state imaging device 100, in some modulation sections 20S (e.g., modulation section 20S5) of the solid-state imaging device 102, the height 21H of the first sub-layer 21 may be less than the height 20H of the modulation section 20S, while the height 22H of the second sub-layer 22 may be equal to the height 20H of the modulation section 20S, but the embodiments of the present disclosure are not limited thereto. In some other embodiments, the height 22H of the second sub-layer 22 may be less than the height 20H of the modulation section 20S, while the height 21H of the first sub-layer 21 may be equal to the height 20H of the modulation section 20S.

[0103] In some embodiments, the ratio of the height 21H of the first sub-layer 21 to the height 20H of the modulation section 20S (or the ratio of the height 22H of the second sub-layer 22 to the height 20H of the modulation section 20S) may be between about 0.5 and about 1.0, but the embodiments of the present disclosure are not limited thereto.

[0104] Figure 8 Shows a partial cross-sectional view of a solid-state imaging device 104 according to some embodiments of the present disclosure. Similarly, for simplicity, Figure 8 some components of the solid-state imaging device 104 may be omitted.

[0105] Figure 8 The shown solid-state imaging device 104 has a structure similar to Figure 1 the shown solid-state imaging device 100. As Figure 8 shown, different from Figure 1The difference between the solid-state imaging device 100 shown is that the solid-state imaging device 104 may further include a color filter layer 40, which is disposed between the photoelectric conversion element 11 and the modulation layer 20.

[0106] like Figure 8 As shown, the color filter layer 40 may have multiple color filter segments 40S. The color filter segments 40S may correspond to the same color or different colors. For example, in... Figure 8 In the illustrated embodiment, one of the color filter segments 40S may be a red filter segment (i.e., color filter segment 40SR), and the other of the color filter segments 40S may be a green filter segment (i.e., color filter segment 40SG), but this embodiment is not limited thereto. In some other embodiments, the color filter segment 40S may include a blue filter segment, a white filter segment, etc.

[0107] In summary, according to embodiments of this disclosure, a solid-state imaging device includes a modulation layer having a plurality of modulation segments. From a top view of the modulation layer, the modulation segments can form at least two groups (e.g., a first group and a second group). These groups can have different arrangements of two sublayers (with different refractive indices), thereby forming a damascene pattern. This damascene pattern can cause phase modulation, which can prevent surface diffraction, thereby improving the quality of the image signal from the photoelectric conversion element of the solid-state imaging device.

[0108] The components of several embodiments have been outlined above to enable those skilled in the art to better understand the views expressed in the embodiments of this disclosure. Those skilled in the art should understand that they can design or modify other processes and structures based on the embodiments of this disclosure to achieve the same purpose and / or advantages as the embodiments described herein. Those skilled in the art should also understand that such equivalent structures do not depart from the spirit and scope of this disclosure, and that they can make various changes, substitutions, and replacements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure is determined by the appended claims. Furthermore, although this disclosure has been described above with reference to several preferred embodiments, it is not intended to limit the scope of this disclosure.

[0109] References to features, advantages, or similar language throughout this specification are not intended to imply that all features and advantages achievable using this disclosure should or may be implemented in any single embodiment of this disclosure. Rather, language relating to features and advantages is to be understood as meaning that a particular feature, advantage, or characteristic described in connection with an embodiment is included in at least one embodiment of this disclosure. Thus, the discussion of features and advantages, as well as similar language, throughout this specification may, but does not necessarily, represent the same embodiments.

[0110] Furthermore, in one or more embodiments, the features, advantages, and characteristics described in this disclosure may be combined in any suitable manner. Based on the description herein, those skilled in the art will recognize that this disclosure may be implemented without one or more specific features or advantages of a particular embodiment. In other instances, additional features and advantages may be identified in certain embodiments that may not be present in all embodiments of this disclosure.

Claims

1. A solid-state imaging device, comprising: Multiple photoelectric conversion elements; as well as A modulation layer is disposed above the plurality of photoelectric conversion elements and has a plurality of modulation sections; The modulation layer includes multiple first sublayers and multiple second sublayers with different refractive indices located on the same horizontal plane above the multiple photoelectric conversion elements. The multiple first sublayers and multiple second sublayers include transparent material. In a top view of the modulation layer, the multiple modulation segments form a first group and a second group adjacent to the first group. The horizontal pattern formed by the multiple first sublayers and multiple second sublayers in the first group is different from the horizontal pattern formed by the multiple first sublayers and multiple second sublayers in the second group. The modulation layer is configured to phase modulate the incident light through a specific arrangement of the first sublayer and the second sublayer to suppress surface diffraction of the solid-state imaging device. From the top view of the modulation layer, each modulation segment includes one of a plurality of first sub-layers and one of a plurality of second sub-layers. Each first sub-layer has a first width in a first direction and a second width in a second direction, the second direction being different from the first direction. Each second sub-layer has a third width in the first direction and a fourth width in the second direction. And each modulation segment has a modulation width in both the first and second directions. The ratio of the first width to the modulation width is greater than 0.25 and less than 1, and the ratio of the third width to the modulation width is greater than 0.25 and less than 1.

2. The solid-state imaging apparatus of claim 1, wherein, in a top view of the modulation layer, the distance between the center of one of the plurality of first sub-layers and the center of the corresponding one of the plurality of modulation segments is between 0 and 0.5 times the difference between the modulation width and the first width, or between 0 and 0.5 times the difference between the modulation width and the second width.

3. The solid-state imaging device of claim 1, wherein, in a top view of the modulation layer, one of the first sub-layer and the second sub-layer is triangular in shape; the dimensions of the triangular structure in the first direction and the second direction correspond to determine the modulation width of the modulation segment.

4. The solid-state imaging apparatus of claim 1, wherein, in a top view of the modulation layer, the second group is adjacent to the first group in the first direction, and the plurality of modulation segments further form a third group adjacent to the first group and a fourth group adjacent to the second group in the second direction, the second direction being different from the first direction, and the horizontal pattern formed by the plurality of first sub-layers and the plurality of second sub-layers in the third group being different from the horizontal pattern formed by the plurality of first sub-layers and the plurality of second sub-layers in the first group.

5. The solid-state imaging apparatus of claim 1, wherein, in a top view of the modulation layer, the second group is adjacent to the first group in the first direction, and the plurality of modulation segments further form a third group adjacent to the first group and a fourth group adjacent to the second group in the second direction, the second direction being different from the first direction, and the horizontal pattern formed by the plurality of first sub-layers and the plurality of second sub-layers in the fourth group being different from the horizontal pattern formed by the plurality of first sub-layers and the plurality of second sub-layers in the second group.

6. The solid-state imaging apparatus of claim 1, wherein each of the first group and each of the second group comprises m×n of the plurality of modulation segments, where m and n are positive integers greater than or equal to 2.

7. The solid-state imaging apparatus of claim 1, wherein, in a cross-sectional view of the modulation layer, the ratio of the height of one of the plurality of first sub-layers to the height of each modulation segment, or the ratio of the height of one of the plurality of second sub-layers to the height of each modulation segment, is between 0.5 and 1.

8. The solid-state imaging device as claimed in claim 1, further comprising: A color filter layer is disposed between the plurality of photoelectric conversion elements and the modulation layer.

9. The solid-state imaging device as claimed in claim 1, further comprising: Multiple light-concentrating structures are disposed on the modulation layer.

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