Flexible organic light-emitting display panel and preparation method thereof, and display device

Abstract

The present application provides a flexible organic light-emitting display panel and a preparation method thereof, and a display device, comprising: a flexible substrate; a thin film transistor layer, arranged on the flexible substrate; a light-emitting diode layer, arranged on a side of the thin film transistor layer away from the flexible substrate; a protective layer, the protective layer being arranged between the thin film transistor layer and the light-emitting diode layer; wherein the material of the protective layer comprises a cross-linked resin material, which can withstand the stress generated when the flexible organic light-emitting display panel is bent.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a flexible organic light-emitting display panel and a preparation method thereof, and a display device. Background Art

[0002] In the prior art, flexible organic light-emitting display panels are a kind of bendable display panels with the advantages of large size, high luminous efficiency, wide viewing angle, weather resistance, short response time, etc. At present, flexible organic light-emitting display panels have become a research hotspot.

[0003] Among them, the organic light-emitting materials and TFT (Thin Film Transistor) in the flexible organic light-emitting display panel are sensitive to water vapor and oxygen. Therefore, it is necessary to consider the design of water vapor and oxygen barrier during the device preparation process to maintain the life span and reduce the impact of environmental factors on the flexible organic light-emitting display panel. Although inorganic materials have a high ability to block water vapor and oxygen, the texture of inorganic materials is relatively brittle and is more likely to be damaged during the curling and stretching of the flexible organic light-emitting display panel, reducing the life span of the flexible organic light-emitting display panel. Summary of the invention

[0004] Embodiments of the present application provide a flexible organic light-emitting display panel and a method for preparing the same, and a display device. The protective layer in the flexible organic light-emitting display panel has a soft cross-linked resin material and can withstand the stress generated when the flexible organic light-emitting display panel is bent.

[0005] The flexibility of the flexible organic light-emitting display panel can be improved, the curling and stretching process of the flexible organic light-emitting display panel can be adapted, and the service life of the flexible organic light-emitting display panel can be increased.

[0006] The embodiment of the present application provides a flexible organic light-emitting display panel, comprising:

[0007] Flexible substrate substrate;

[0008] A thin film transistor layer is provided on the flexible substrate;

[0009] A light emitting diode layer, arranged on a side of the thin film transistor layer away from the flexible substrate;

[0010] A protective layer, the protective layer being disposed between the thin film transistor layer and the light emitting diode layer;

[0011] The material of the protective layer includes a cross-linked resin material, so that the protective layer can prevent water vapor or oxygen from entering the thin film transistor layer and can withstand the stress generated when the flexible organic light emitting display panel is bent.

[0012] In some embodiments, the protective layer includes a first layer and a second layer, the first layer is arranged between the thin film transistor layer and the light-emitting diode layer, and the second layer is arranged between the first layer and the light-emitting diode layer; wherein the material of the second layer includes inorganic substances and organic small molecules, and the material of the first layer includes the cross-linked resin material formed by pre-polymerization of the organic small molecules.

[0013] In some embodiments, the cross-linked resin material includes one or more of polyimide, polyester, polymer derivatives of phenolic groups, acryl polymers, imide polymers, and acryl ether polymers.

[0014] In some embodiments, the inorganic substance includes one or more of nano silicon oxide, silicon nitride, silicon oxynitride, carbon silicon, carbon oxysilicon, titanium oxide, and titanium nitride.

[0015] In some embodiments, the flexible organic light-emitting display panel also includes a display area and a non-display area having multiple auxiliary pixel units, and the protective layer is arranged in the display area, or the protective layer is arranged in the display area and the non-display area having multiple auxiliary pixel units.

[0016] The present application also provides a method for preparing a flexible organic light-emitting display panel, including:

[0017] Providing a flexible substrate base;

[0018] forming a thin film transistor layer on one side of the flexible substrate;

[0019] forming a protective layer on a side of the thin film transistor layer away from the flexible substrate;

[0020] forming a light emitting diode layer on a side of the protective layer away from the flexible substrate;

[0021] Wherein, the material of the protective layer includes a cross-linked resin material so that the protective layer can prevent water vapor or oxygen from entering the thin film transistor layer.

[0022] In some embodiments, forming a protective layer on a side of the thin film transistor layer away from the flexible substrate includes:

[0023] Coating a mixture on a side of the thin film transistor layer away from the flexible substrate, wherein the mixture includes a solvent, an inorganic substance and organic small molecules;

[0024] Exposing the mixture to light so that the organic small molecules on the surface are partially cross-linked to form a second layer, and the organic small molecules inside cannot be cross-linked to form a first layer;

[0025] The first layer is disposed between the thin film transistor layer and the light emitting diode layer, and the second layer is disposed between the first layer and the light emitting diode layer.

[0026] In some embodiments, the exposing the mixture to light further comprises:

[0027] The protective layer is subjected to a thermal curing reaction so that the protective layer can be cured.

[0028] The present application also provides a display device, comprising the above-mentioned flexible organic light-emitting display panel.

[0029] The flexible organic light-emitting display panel provided in the embodiment of the present application comprises a flexible substrate, a thin film transistor layer, a light-emitting diode layer, and a protective layer disposed between the thin film transistor layer and the light-emitting diode layer. The protective layer comprises a soft cross-linked resin material, which can prevent water vapor or oxygen from entering the thin film transistor layer and can withstand the stress generated when the flexible organic light-emitting display panel is bent. The protective layer provided in the present application can improve the flexibility of the flexible organic light-emitting display panel, that is, adapt to the curling and stretching process of the flexible organic light-emitting display panel, and improve the life of the flexible organic light-emitting display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0031] Figure 1 This is a schematic diagram of a first cross-sectional structure of a flexible organic light-emitting display panel provided in an embodiment of the present application.

[0032] Figure 2 A schematic diagram of a second cross-sectional structure of a flexible organic light-emitting display panel provided in an embodiment of the present application.

[0033] Figure 3 This is a schematic diagram of a third top view structure of the flexible organic light emitting display panel provided in an embodiment of the present application.

[0034] Figure 4 A schematic diagram of a process for preparing a flexible organic light-emitting display panel provided in an embodiment of the present application.

[0035] Figure 5 A schematic diagram of the process flow of a flexible organic light-emitting display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0037] In the prior art, flexible organic light-emitting display panels are a kind of bendable display panels with the advantages of large size, high luminous efficiency, wide viewing angle, weather resistance, short response time, etc. At present, flexible organic light-emitting display panels have become a research hotspot.

[0038] Among them, the organic light-emitting materials and TFT (Thin Film Transistor) in the flexible organic light-emitting display panel are sensitive to water vapor and oxygen. Therefore, it is necessary to consider the design of water vapor and oxygen barrier during the device preparation process to maintain the life span and reduce the impact of environmental factors on the flexible organic light-emitting display panel. Although inorganic materials have a high ability to block water vapor and oxygen, the texture of inorganic materials is relatively brittle and is more likely to be damaged during the curling and stretching of the flexible organic light-emitting display panel, reducing the life span of the flexible organic light-emitting display panel.

[0039] The embodiment of the present application provides a flexible organic light-emitting display panel and a method for manufacturing the same, and a display device. The protective layer in the flexible organic light-emitting display panel has a soft cross-linked resin material, which can prevent water vapor or oxygen from entering the thin film transistor layer and can withstand the stress generated when the flexible organic light-emitting display panel is bent. The following is a detailed description with reference to the accompanying drawings.

[0040] See also Figure 1 , Figure 1 This is a schematic diagram of a first cross-sectional structure of a flexible organic light-emitting display panel provided in an embodiment of the present application.

[0041] The embodiment of the present application provides a flexible organic light emitting display panel 10, including a flexible substrate 100, a thin film transistor layer 200, a light emitting diode layer 300 and a protective layer 400, wherein the thin film transistor layer 200 is disposed on the flexible substrate 100, the light emitting diode layer 300 is disposed on a side of the thin film transistor layer 200 away from the flexible substrate 100, and the protective layer 400 is disposed between the thin film transistor layer 200 and the light emitting diode layer 300. The material of the protective layer 400 includes a cross-linked resin material so that the protective layer 400 can prevent water vapor or oxygen from entering the thin film transistor layer 200 and can withstand the stress generated when the flexible organic light emitting display panel 10 is bent.

[0042] Among them, since the flexible substrate substrate 100 is stretchable, foldable, bendable or rollable, the flexible organic light-emitting display panel 10 is also stretchable, foldable, bendable or rollable. The flexible substrate substrate 100 can be formed of any suitable insulating material with flexibility. The flexible substrate substrate 100 can be an organic polymer or an organic-inorganic doped composite. For example, the organic polymer can be polyimide (PI) or polyethylene terephthalate (PET); the inorganic-organic doped composite can be a glass fiber doped in the organic polymer polyimide. Since the glass fiber has high toughness, the flexible strength of the flexible substrate substrate 100 can be significantly improved, so that the flexible organic light-emitting display panel 10 is not easy to break and peel when bent, which can effectively extend the service life of the flexible substrate substrate 100. The main preparation method of the flexible substrate substrate 100 is usually to form the flexible substrate substrate 100 on a carrier substrate (such as a high-temperature resistant glass substrate). The side of the flexible substrate substrate 100 adjacent to the carrier substrate is generally called the bottom surface, and the opposite side is generally called the top surface. Then, electronic devices (such as thin film transistors, resistors, capacitors, etc.) are formed on the top surface of the flexible substrate 100 and other steps of manufacturing the flexible organic light-emitting display panel 10 are performed, and finally the flexible organic light-emitting display panel 10 is peeled off from the carrier substrate.

[0043] The thin film transistor layer 200 is located on the flexible substrate 100. Taking the thin film transistor layer 200 of the top gate structure as an example, the thin film transistor layer 200 includes a metal layer located on the flexible substrate 100; a buffer layer located on the metal layer; an active layer located on the buffer layer; a gate insulating layer located on the active layer, a gate located on the gate insulating layer, an interlayer insulating layer located on the gate; a source electrode and a drain electrode located on the interlayer insulating layer; a passivation layer located on the source electrode and the drain electrode; and an organic planarization layer located on the passivation layer.

[0044] Specifically, the active layer includes a source region and a drain region formed by doping N-type impurity ions or P-type impurity ions. The region between the source region and the drain region is a channel region. The active layer can be an amorphous silicon material, a polycrystalline silicon material, or a metal oxide material. When the active layer is made of polycrystalline silicon material, low-temperature amorphous silicon technology can be used to form the active layer, that is, the amorphous silicon material is melted by the laser to form a polycrystalline silicon material. In addition, various methods such as rapid thermal annealing (RTA), solid phase crystallization (SPC), excimer laser annealing (ELA), metal induced crystallization (MIC), metal induced lateral crystallization (MILC) or continuous lateral solidification (SLS) can also be used.

[0045] The gate insulating layer includes an inorganic layer such as silicon oxide, silicon nitride, and may include a single layer or multiple layers. The gate is located on the gate insulating layer. The gate may include a single layer or multiple layers of gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminum (Al), molybdenum (MO) or chromium (Cr), or an alloy such as aluminum (Al): neodymium (Nd) alloy and molybdenum (MO): tungsten (W) alloy.

[0046] The interlayer insulating layer is located on the gate. The interlayer insulating layer can be formed by an insulating inorganic layer of silicon oxide or silicon nitride. Alternatively, the interlayer insulating layer can be formed by an insulating organic layer. The source and drain both belong to the source-drain metal layer. The source and drain are located on the interlayer insulating layer. The source and drain are electrically connected to the source region and the drain region respectively through contact holes that penetrate the gate insulating layer and the interlayer insulating layer. The source and drain may include a single layer or multiple layers of gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminum (Al), molybdenum (MO) or chromium (Cr), or alloys such as aluminum (Al): neodymium (Nd) alloys and molybdenum (MO): tungsten (W) alloys.

[0047] The passivation layer is located on the source electrode and the drain electrode. The passivation layer may be formed of an inorganic layer such as silicon oxide or silicon nitride, or an organic layer.

[0048] The organic planarization layer is located on the passivation layer and can be formed of an organic layer such as acrylic, polyimide (PI) or benzocyclobutene (BCB), and the organic planarization layer has a planarization function.

[0049] The organic light emitting diode layer 300 includes a first electrode located on the thin film transistor layer 200, a light emitting functional layer located on the first electrode, and a second electrode located on the light emitting functional layer. For example, the first electrode is an anode, and the second electrode is a cathode.

[0050] The first electrode may be disposed on the organic planarization layer. The first electrode may be formed of a conductive material with high reflectivity, such as a stacked structure of Al and Ti (Ti / Al / Ti), and / or a stacked structure of Al and indium tin oxide (ITO) (ITO / Al / ITO). For example, the first electrode may also be formed of an APC alloy, a stacked structure of an APC alloy and ITO (ITO / APC / ITO), and / or the like. Among them, the APC alloy is an alloy of Ag, Pd, and Cu.

[0051] The light-emitting functional layer may be disposed on the first electrode. The light-emitting functional layer may be a white light-emitting layer that emits white light. In this case, the light-emitting functional layer may be formed as a tandem structure of two or more stacks. Each stack may include a hole transport layer, at least one light-emitting layer, and an electron transport layer. The light-emitting functional layer may be formed by a deposition process or a solution process. In the case where the light-emitting functional layer is formed by a deposition process, the light-emitting functional layer may be formed by an evaporation process.

[0052] The second electrode may be disposed on the light emitting functional layer and may be formed of a transparent conductive material capable of transmitting light, such as ITO or indium zinc oxide (IZO), a transparent conductive oxide (TCO), or a semi-transmissive conductive material such as Mg, Ag, or an alloy of Mg and Ag.

[0053] The protective layer 400 is disposed between the thin film transistor layer 200 and the light emitting diode layer 300, that is, the thin film transistor layer 200, the protective layer 400 and the light emitting diode layer 300 are stacked. In addition, in order not to affect the thickness of the flexible organic light emitting display panel 10, the thickness of the protective layer 400 is 0.01 μm to 1 μm, for example 0.5 μm.

[0054] The flexible organic light-emitting display panel 10 provided in the embodiment of the present application comprises a flexible substrate 100, a thin film transistor layer 200, a light-emitting diode layer 300, and a protective layer 400 disposed between the thin film transistor layer 200 and the light-emitting diode layer 300. The protective layer 400 comprises a soft cross-linked resin material, which can prevent water vapor or oxygen from entering the thin film transistor layer 200 and can withstand the stress generated when the flexible organic light-emitting display panel 10 is bent. The protective layer 400 provided in the present application improves the flexibility of the flexible organic light-emitting display panel 10, that is, adapts to the curling and stretching process of the flexible organic light-emitting display panel 10, and prolongs the life of the flexible organic light-emitting display panel 10.

[0055] See also Figure 2 , Figure 2 A schematic diagram of a second cross-sectional structure of a flexible organic light-emitting display panel provided in an embodiment of the present application.

[0056] The protective layer 400 includes a first layer 401 and a second layer 402. The first layer 401 is disposed between the thin film transistor layer 200 and the light emitting diode layer 300, and the second layer 402 is disposed between the first layer 401 and the light emitting diode layer 300. The first layer 401 is inorganic and organic small molecules, and the second layer 402 is a cross-linked resin material formed by partially cross-linking the organic small molecules.

[0057] For example, there are two processes for forming the protective layer 400 into a double-layer structure: one is to coat a mixture of solvent, inorganic substances and organic small molecules on the thin film transistor layer 200, and perform thermal curing to form the inorganic substances and organic small molecules on the thin film transistor layer 200 to form a first layer 401, and then coat the solvent, inorganic substances and organic small molecules on the thin film transistor layer 200 on the first layer 401, expose the solvent, inorganic substances and organic small molecules to prepolymerize the organic small molecules to form a cross-linked resin material, and thermally cure the cross-linked resin material to form a second layer 402; the other is to coat a mixture of solvent, inorganic substances and organic small molecules on the thin film transistor layer 200, expose the solvent, inorganic substances and organic small molecules to prepolymerize the organic small molecules on the surface to form the second layer 402, and the organic small molecules inside cannot be exposed and thus do not react to form the first layer 401.

[0058] Since the inorganic matter in the protective layer 400 can isolate water vapor and oxygen, and the cross-linked resin material in the protective layer 400 can withstand the stress generated when the flexible organic light-emitting display panel 10 is bent, the protective layer 400 provided in the present application can not only block water vapor and oxygen, but also improve the flexibility of the flexible organic light-emitting display panel 10, that is, adapt to the curling and stretching process of the flexible organic light-emitting display panel 10, and improve the life of the flexible organic light-emitting display panel 10.

[0059] It is worth noting that the material of the first layer 401 includes inorganic substances and organic small molecules, and the material of the second layer 402 includes a cross-linked resin material formed by partially cross-linking organic small molecules. The material of the second layer 402 can also include inorganic substances and organic small molecules, so that the second layer 402 can not only block water vapor and oxygen, but also improve the flexibility of the flexible organic light-emitting display panel 10.

[0060] The solvent forms a suspension and a stable colloidal solution with inorganic substances and small organic molecules.

[0061] The cross-linked resin material includes one or more of polyimide, polyester, polymer derivatives of phenolic groups, acryl polymers, imide polymers and acryl ether polymers.

[0062] The inorganic substances include one or more of nano silicon oxide, silicon nitride, silicon oxynitride, carbon silicon, carbon oxide silicon, titanium oxide and titanium nitride.

[0063] See also Figure 3 , Figure 3 This is a schematic diagram of a third top view structure of the flexible organic light emitting display panel provided in an embodiment of the present application.

[0064] In some embodiments, the flexible organic light-emitting display panel 10 also includes a display area 500 and a non-display area 600 having multiple auxiliary pixel units, and the protective layer 400 is disposed in the display area 500, or the protective layer 400 is disposed in the display area 500 and the non-display area 600 having multiple auxiliary pixel units.

[0065] It is understandable that in the design of the flexible organic light-emitting display panel 10, the uniformity of various devices at the starting and ending points of their actions is poor, but the uniformity in the middle section of their actions is better. In order to ensure the uniformity of the process of each pixel unit in the display area 500, it is usually necessary to set an auxiliary pixel unit (DummyPiexl) in the blank area of ​​the non-display area 600 close to the display area 500, and the auxiliary pixel unit includes 1 to 10 pixel units.

[0066] See also Figure 4 as well as Figure 5 , Figure 4 A schematic diagram of a process for preparing a flexible organic light-emitting display panel provided in an embodiment of the present application is provided. Figure 5 A schematic diagram of the process flow of a flexible organic light-emitting display panel provided in an embodiment of the present application.

[0067] The embodiment of the present application also provides a method for preparing a flexible organic light-emitting display panel 10, comprising:

[0068] S11, providing a flexible substrate 100.

[0069] The flexible substrate substrate 100 is stretchable, foldable, bendable or rollable, so that the flexible organic light-emitting display panel 10 is also stretchable, foldable, bendable or rollable. The flexible substrate substrate 100 can be formed of any suitable insulating material with flexibility. The flexible substrate substrate 100 can be an organic polymer or an organic-inorganic doped composite. For example, the organic polymer can be polyimide (PI) or polyethylene terephthalate (PET); the inorganic-organic doped composite can be a glass fiber doped in the organic polymer polyimide. Since the glass fiber has high toughness, the flexible strength of the flexible substrate substrate 100 can be significantly improved, so that the flexible organic light-emitting display panel 10 is not easy to break and peel when bent, which can effectively extend the service life of the flexible substrate substrate 100. The main preparation method of the flexible substrate substrate 100 is usually to form the flexible substrate substrate 100 on a carrier substrate (such as a high-temperature resistant glass substrate). The side of the flexible substrate substrate 100 adjacent to the carrier substrate is generally called the bottom surface, and the opposite side is generally called the top surface. Then, electronic devices (such as thin film transistors, resistors, capacitors, etc.) are formed on the top surface of the flexible substrate 100 and other steps of manufacturing the flexible organic light-emitting display panel 10 are performed, and finally the flexible organic light-emitting display panel 10 is peeled off from the carrier substrate.

[0070] S12 , forming a thin film transistor layer 200 on one side of the flexible substrate 100 .

[0071] The thin film transistor layer 200 is located on the flexible substrate 100. Taking the thin film transistor layer 200 of the top gate structure as an example, the thin film transistor layer 200 includes a metal layer located on the flexible substrate 100; a buffer layer located on the metal layer; an active layer located on the buffer layer; a gate insulating layer located on the active layer, a gate located on the gate insulating layer, an interlayer insulating layer located on the gate; a source electrode and a drain electrode located on the interlayer insulating layer; a passivation layer located on the source electrode and the drain electrode; and an organic planarization layer located on the passivation layer.

[0072] The thin film transistor layer 200 may be formed on one side of the flexible substrate 100 by coating, printing or photolithography.

[0073] S13 , forming a protective layer 400 on a side of the thin film transistor layer 200 away from the flexible substrate 100 .

[0074] The material of the protective layer 400 includes a cross-linked resin material so that the protective layer 400 can prevent water vapor or oxygen from entering the thin film transistor layer 200 and can withstand the stress generated when the flexible organic light-emitting display panel 10 is bent. In order not to affect the thickness of the flexible organic light-emitting display panel 10, the thickness of the protective layer 400 is 0.01 μm to 1 μm, for example, 0.5 μm.

[0075] S14 , forming a light emitting diode layer 300 on a side of the protection layer 400 away from the flexible substrate 100 .

[0076] The organic light emitting diode layer 300 includes a first electrode located on the thin film transistor layer 200, a light emitting functional layer located on the first electrode, and a second electrode located on the light emitting functional layer. For example, the first electrode is an anode, and the second electrode is a cathode.

[0077] The light emitting diode layer 300 may be formed on a side of the protective layer 400 away from the flexible substrate 100 by coating, printing or photolithography.

[0078] In some embodiments, a protective layer 400 is formed on a side of the thin film transistor layer 200 away from the flexible substrate 100, including:

[0079] A mixture is coated on one side of the thin film transistor layer 200 away from the flexible substrate 100, wherein the mixture includes a solvent, an inorganic substance and organic small molecules; the mixture is exposed so that the organic small molecules on the surface are partially cross-linked to form a second layer 402, and the organic small molecules inside cannot be cross-linked to form a first layer 401; wherein the first layer 401 is arranged between the thin film transistor layer 200 and the light-emitting diode layer 300, and the second layer 402 is arranged between the first layer 401 and the light-emitting diode layer 300.

[0080] It can be seen that there are two processes for forming the double-layer structure of the protective layer 400: one is to coat the mixture of solvent, inorganic substance and organic small molecules on the thin film transistor layer 200, and perform thermal curing so that the inorganic substance and organic small molecules form the first layer 401 on the thin film transistor layer 200, and then coat the solvent, inorganic substance and organic small molecules on the thin film transistor layer 200 on the first layer 401, and expose the solvent, inorganic substance and organic small molecules so that the organic small molecules are prepolymerized to form a cross-linked resin material, i.e., the second layer 402; the other is to coat the mixture of solvent, inorganic substance and organic small molecules on the thin film transistor layer 200, and expose the solvent, inorganic substance and organic small molecules so that the organic small molecules on the surface are prepolymerized to form the second layer 402, and the organic small molecules inside cannot be exposed and thus do not react to form the first layer 401. It can be understood that the second process can save steps and effectively reduce costs.

[0081] The solvent can form a solvent, a suspension, or a stable colloidal solution with inorganic substances and organic small molecules. The solvent can be methanol, ethanol, ethyl acetate, dichloromethane, chloroform, acetone, or the like.

[0082] The cross-linked resin material includes one or more of polyimide, polyester, polymer derivatives of phenolic groups, acryl polymers, imide polymers and acryl ether polymers.

[0083] The inorganic substances include one or more of nano silicon oxide, silicon nitride, silicon oxynitride, carbon silicon, carbon oxide silicon, titanium oxide and titanium nitride.

[0084] In some embodiments, after exposing the mixture to partially crosslink the organic small molecules, the method further comprises:

[0085] The protective layer 400 is subjected to a thermal curing reaction so that the protective layer 400 can be cured.

[0086] The protective layer 400 is heated so that the protective layer 400 can be thermally cured and the solvent can be evaporated.

[0087] The present application also provides a display device, which includes the above-mentioned flexible organic light-emitting display panel 10. For example, the display device can be a mobile phone, a computer, a laptop, a tablet or a television.

[0088] The flexible organic light-emitting display panel 10 provided in the embodiment of the present application comprises a flexible substrate 100, a thin film transistor layer 200, a light-emitting diode layer 300, and a protective layer 400 disposed between the thin film transistor layer 200 and the light-emitting diode layer 300. The protective layer 400 comprises a soft cross-linked resin material, which can prevent water vapor or oxygen from entering the thin film transistor layer 200 and can withstand the stress generated when the flexible organic light-emitting display panel 10 is bent. The protective layer 400 provided in the present application improves the flexibility of the flexible organic light-emitting display panel 10, that is, adapts to the curling and stretching process of the flexible organic light-emitting display panel 10, and prolongs the life of the flexible organic light-emitting display panel 10.

[0089] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0090] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features.

[0091] The flexible organic light-emitting display panel and its preparation method and display device provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A flexible organic light-emitting display panel, characterized in that: include: Flexible substrate substrate; A thin film transistor layer, arranged on the flexible substrate, the thin film transistor layer comprising an interlayer insulating layer, a passivation layer and an organic planarization layer stacked in sequence, the interlayer insulating layer being located on the flexible substrate, and a source electrode and a drain electrode of the thin film transistor being arranged between the interlayer insulating layer and the passivation layer; A light emitting diode layer, arranged on a side of the thin film transistor layer away from the flexible substrate; A protective layer, wherein the protective layer is disposed between the thin film transistor layer and the light emitting diode layer, and the protective layer is disposed on a side of the organic planarization layer away from the flexible substrate; Wherein, the material of the protective layer includes a cross-linked resin material, which can withstand the stress generated when the flexible organic light-emitting display panel is bent; The protective layer includes a first layer and a second layer, the first layer is arranged between the thin film transistor layer and the light-emitting diode layer, and the second layer is arranged between the first layer and the light-emitting diode layer; wherein the material of the second layer includes inorganic substances and organic small molecules, and the material of the first layer includes the cross-linked resin material formed by pre-polymerization of the organic small molecules.

2. The flexible organic light emitting display panel according to claim 1, characterized in that: The cross-linked resin material includes one or more of polyimide, polyester, polymer derivatives of phenolic groups, acryl polymers, imide polymers and acryl ether polymers.

3. The flexible organic light emitting display panel according to claim 1, characterized in that: The inorganic substance includes one or more of nano silicon oxide, silicon nitride, silicon oxynitride, carbon silicon, carbon oxide silicon, titanium oxide and titanium nitride.

4. The flexible organic light emitting display panel according to any one of claims 1 to 3, characterized in that: It also includes a display area and a non-display area having a plurality of auxiliary pixel units, the protective layer is arranged in the display area, or the protective layer is arranged in the display area and the non-display area having a plurality of auxiliary pixel units.

5. The flexible organic light emitting display panel according to any one of claims 1 to 3, characterized in that: The material of the flexible substrate is organic polymer or organic-inorganic doped composite.

6. A method for preparing a flexible organic light-emitting display panel, characterized in that: include: Providing a flexible substrate base; A thin film transistor layer is formed on one side of the flexible substrate, wherein the thin film transistor layer comprises an interlayer insulating layer, a passivation layer and an organic planarization layer stacked in sequence, the interlayer insulating layer is located on the flexible substrate, and a source electrode and a drain electrode of the thin film transistor are arranged between the interlayer insulating layer and the passivation layer; forming a protective layer on a side of the thin film transistor layer away from the flexible substrate, wherein the protective layer is arranged on a side of the organic planarization layer away from the flexible substrate; forming a light emitting diode layer on a side of the protective layer away from the flexible substrate; Wherein, the material of the protective layer includes a cross-linked resin material so that the protective layer can block water vapor or oxygen from entering the thin film transistor layer, and the protective layer includes a first layer and a second layer, the first layer is arranged between the thin film transistor layer and the light-emitting diode layer, and the second layer is arranged between the first layer and the light-emitting diode layer; wherein, the material of the second layer includes inorganic substances and organic small molecules, and the material of the first layer includes the cross-linked resin material formed by pre-polymerization of the organic small molecules.

7. The method for preparing a flexible organic light-emitting display panel according to claim 6, characterized in that: The step of forming a protective layer on a side of the thin film transistor layer away from the flexible substrate includes: Coating a mixture on a side of the thin film transistor layer away from the flexible substrate, wherein the mixture includes a solvent, an inorganic substance and organic small molecules; Exposing the mixture to light, so that the organic small molecules on the surface are prepolymerized to form a second layer, and the organic small molecules inside cannot react to form a first layer; The first layer is disposed between the thin film transistor layer and the light emitting diode layer, and the second layer is disposed between the first layer and the light emitting diode layer.

8. The method for preparing a flexible organic light-emitting display panel according to claim 7, characterized in that: After exposing the mixture, the method further comprises: The protective layer is subjected to a thermal curing reaction so that the protective layer can be cured.

9. A display device, characterized in that: A flexible organic light-emitting display panel comprising any one of claims 1 to 5.

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