Substrate processing apparatus, state determination method, and computer storage medium

Abstract

The present invention relates to a substrate processing apparatus, a state determination method, and a computer storage medium, which accurately perform determination of a state of a distance between a functional unit constituting a part of a substrate processing apparatus and an interferer, regardless of humidity and temperature of an atmosphere around the interferer. A substrate processing apparatus for processing a substrate according to the present invention includes: a functional unit constituting a part of the substrate processing apparatus; a nozzle for passing a gas provided on a surface of the functional unit; a nozzle flow path for circulating the gas connected to the nozzle of the functional unit; a flow rate sensor for measuring a flow rate of the gas flowing in the nozzle flow path; and a control unit for determining a state of a distance between the interferer and the functional unit based on a measurement result of the flow rate sensor.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus, a status determination method, and a computer storage medium. Background Technology

[0002] Patent Document 1 discloses a substrate transport device for transporting substrates between a wafer boat supporting multiple substrates and a carrier. The substrate transport device includes: a transport device body movable between a first transfer operation position and a second transfer operation position; the transport device body is capable of performing transfer operations with the wafer boat at the first transfer operation position and with the carrier between the second transfer operation positions; a fork-shaped member configured to move forward and backward relative to the transport device body for transferring substrates between the wafer boat and the substrate support portion of the carrier; and electrostatic capacitance sensors mounted on both sides of the fork-shaped member, moving forward and backward integrally with the fork-shaped member to detect the distance to the substrate and the position of the substrate in a horizontal plane.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 8-335622 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The technology of the present invention accurately determines the state of the distance between a functional part constituting a substrate processing apparatus and an interfering object.

[0008] Technical means for solving technical problems

[0009] One aspect of the present invention is a substrate processing apparatus for processing a substrate, comprising: a functional unit constituting part of the substrate processing apparatus; a nozzle disposed on the surface of the functional unit for passing gas through; a nozzle flow path connected to the nozzle of the functional unit for allowing the gas to flow; a flow sensor for measuring the flow rate of the gas flowing in the nozzle flow path; and a control unit for determining, based on the measurement result of the flow sensor, the state of the distance between an interfering object and the functional unit.

[0010] Invention Effects

[0011] According to the present invention, it is possible to accurately determine the state of the distance between a functional part constituting a part of the substrate processing apparatus and an interfering object. Attached Figure Description

[0012] Figure 1This is an explanatory diagram showing a schematic representation of the internal structure of the wafer processing apparatus, which is the substrate processing apparatus of this embodiment.

[0013] Figure 2 This is a schematic diagram showing the internal structure of the front side of the wafer processing device.

[0014] Figure 3 This is a schematic diagram showing the internal structure of the back side of the wafer processing device.

[0015] Figure 4 This is a schematic side view showing the structure of the conveying unit.

[0016] Figure 5 It is a top view showing the general structure of the fork-shaped component.

[0017] Figure 6 It is a bottom view showing the general structure of the fork-shaped component.

[0018] Figure 7 It is a schematic cross-sectional view showing the structure of the nozzle.

[0019] Figure 8 This diagram illustrates the rationale for determining whether the fork-shaped component 120 is in contact with the wafer W below it based on the measurement results of the flow sensor 1.

[0020] Figure 9 This is a graph showing the relationship between the distance from the simulated fork-shaped component with the simulated nozzle installed to the interference object and the actual measurement results of the flow sensor.

[0021] Figure 10 This is a graph showing the relationship between the opening area of ​​the flow orifice of the simulated nozzle and the actual measurement results of the flow sensor.

[0022] Figure 11 This is a diagram showing an example of a fork-shaped component that has already been installed.

[0023] Figure 12 It means in Figure 11 The diagram shows the situation where a fixture is installed on the existing fork-shaped component to replace the adsorption component.

[0024] Figure 13 This is another example of a diagram showing the shape of a nozzle.

[0025] Figure 14 This diagram illustrates an example of placing a nozzle within a resist coating unit.

[0026] Explanation of reference numerals in the attached figures

[0027] 1. Wafer processing device

[0028] 6. Control Department

[0029] 23 Conveying mechanism

[0030] 113a relay flow path

[0031] 120 Fork-shaped component

[0032] 125 2nd internal flow path

[0033] 130 Piping

[0034] Part 131

[0035] 140 Flow Sensor

[0036] 202a Main body side internal flow path

[0037] 211 Flow path inside the fixture

[0038] 301 Nozzle

[0039] 405 Inner Cup

[0040] 408 Nozzle

[0041] 409 Piping

[0042] 410 Flow Sensor

[0043] W chip Detailed Implementation

[0044] In the prior art, in the manufacturing process of semiconductor devices, there are various substrate processing devices, such as coating and developing devices that perform a series of photolithography processes on substrates such as semiconductor wafers (hereinafter referred to as "wafers"), including resist coating, exposure processing, and development processing, and etching processing devices that perform etching processing on wafers.

[0045] Typically, such substrate processing apparatuses include a substrate transport mechanism. This transport mechanism has a fork-shaped member that serves as a substrate holding portion, and this fork-shaped member is configured to be movable. In this transport mechanism, by moving the fork-shaped member holding the substrate, the substrate can be transported to a desired position, for example.

[0046] However, when the fork-shaped component moves, it may sometimes come into contact with surrounding substrates, structures, etc. For example, when inserting the fork-shaped component into a box containing multiple substrates for substrate transfer, there is a possibility that the fork-shaped component may accidentally come into contact with the substrate located below it. Of course, designs have been made to prevent unexpected contact. However, for example, in the drive system of a conveyor mechanism, the fork-shaped component may sometimes experience positional shifts due to motor or reducer malfunctions, changes in the drive belt over time, etc. If this positional shift results in insufficient distance between the fork-shaped component and the substrate, then when the fork-shaped component moves at high speed, due to the relationship with the resonant frequency, there is a possibility that the fork-shaped component may vibrate significantly and come into contact with the substrate.

[0047] If the fork-shaped components come into contact, it can cause damage to the substrate or structure they are in contact with, and the generation of particles, thus becoming a problem. Furthermore, when the fork-shaped components come into contact with their surroundings, appropriate measures are required, such as adjusting the movement conditions of the fork-shaped components, replacing or discarding the fork-shaped components and the substrates or structures they come into contact with. Therefore, a method for determining whether contact or proximity between the fork-shaped components and interfering objects has occurred has been considered; that is, a state determination method for judging the distance between the fork-shaped components and interfering objects that may come into contact with them.

[0048] As a method for determining the aforementioned state, one consideration is using an electrostatic capacitance sensor mounted on the fork-shaped component. In this method, the capacitance between the sensor portion of the electrostatic capacitance sensor and an interfering object that may come into contact with the fork-shaped component (i.e., may interfere with the fork-shaped component) is measured, and the contact between the fork-shaped component and the interfering object is determined based on the measurement result. However, the capacitance between the sensor portion and the interfering object varies significantly depending on the material properties of the interfering object, such as its conductivity and dielectric constant. Therefore, in the method using the aforementioned electrostatic capacitance sensor, it is sometimes impossible to properly determine the state regarding the distance between the fork-shaped component and the interfering object.

[0049] The above-mentioned technology applies to any functional part that is movable relative to other parts and is part of the substrate processing apparatus, except for the fork-shaped component.

[0050] Therefore, the technology of the present invention accurately determines the state of the distance between a functional part constituting a substrate processing apparatus and an interfering object.

[0051] The substrate processing apparatus and state determination method of this embodiment will now be described with reference to the accompanying drawings. Note that in this specification and the accompanying drawings, elements that have substantially the same functional structure are given the same reference numerals, and repeated descriptions are omitted.

[0052] Figure 1This is an explanatory diagram showing a schematic of the internal structure of the wafer processing apparatus 1, which is the substrate processing apparatus of this embodiment. Figure 2 and Figure 3 These are schematic diagrams showing the internal structures of the front and back sides of the wafer processing device 1, respectively.

[0053] like Figure 1 As shown, the wafer processing apparatus 1 includes: a cassette station 2 capable of loading and unloading a cassette C, which is a container for holding multiple wafers as substrates; and a processing station 3 comprising various processing units that perform prescribed processes such as resist coating and PEB. Furthermore, the wafer processing apparatus 1 has a structure that integrally connects the cassette station 2, the processing station 3, and the interface station 5, wherein wafers W are transferred between the interface station 5 and the exposure apparatus 4 adjacent to the processing station 3. Additionally, the wafer processing apparatus 1 includes a control unit 6 for controlling the wafer processing apparatus 1.

[0054] The cassette station 2 is, for example, divided into a cassette loading / unloading section 10 and a wafer transport section 11. For example, the cassette loading / unloading section 10 is located in the negative Y-direction of the wafer processing apparatus 1. Figure 1 The end on the left side. A box loading / unloading section 10 is provided with a box mounting platform 12. Multiple, for example, four mounting plates 13 are provided on the box mounting platform 12. The mounting plates 13 are positioned in the horizontal X direction ( Figure 1 They are arranged in a row in the vertical direction. When the cartridge C is moved in or out of the wafer processing device 1, the cartridge C can be placed on these mounting plates 13.

[0055] A transport mechanism 20 for transporting wafers W is provided in the wafer transport section 11. The transport mechanism 20 is provided with a transport path 21 extending in the X direction and a transport unit 22 movable on the transport path 21. The transport unit 22 has a fork-shaped member (described later) movable in the Y direction. The transport unit 22 can also move in the vertical direction and in the direction about the vertical axis (θ direction), enabling it to transport wafers W between the cassette C on each mounting plate 13 and the junction unit of the third block G3 of the processing station 3 (described later). Details about the transport unit 22 will be described later.

[0056] Processing station 3 is equipped with multiple blocks, such as blocks G1, G2, G3, and G4, which include various units. For example, on the front side of processing station 3 ( Figure 1 Block G1 is located on the negative X-direction side of processing station 3. Figure 1 The second block G2 is located on the positive X-direction side. Additionally, on the side of processing station 3 adjacent to box station 2 ( Figure 1 The third block G3 is located on the negative Y-direction side of the processing station 3, on the side closest to the interface station 5. Figure 1The fourth block G4 is set on the positive Y-direction side.

[0057] In block G1, such as Figure 2 As shown, multiple liquid processing units are arranged sequentially from bottom to top, such as a development processing unit 30, which is a development processing section for developing wafer W, and a resist coating unit 31, which coats the wafer W with resist liquid to form a resist film.

[0058] For example, three developing units 30 and three resist coating units 31 are arranged horizontally. The number and arrangement of these developing units 30 and resist coating units 31 can be arbitrarily selected.

[0059] In these developing units 30 and resist coating units 31, a specified processing solution is applied to the wafer W, for example, using spin coating. In spin coating, for example, the processing solution is released onto the wafer W from a release nozzle, and the wafer W is rotated to allow the processing solution to spread on the surface of the wafer W.

[0060] For example, in block G2, such as Figure 3 As shown, heat treatment units 40 for heating and cooling wafer W and peripheral exposure units 41 for exposing the outer periphery of wafer W are arranged in the vertical and horizontal directions. The number and arrangement of these heat treatment units 40 and peripheral exposure units 41 can be arbitrarily selected. The structure of the heat treatment unit 40 will be described later.

[0061] Multiple handover units 50 are set up in block 3 G3. Multiple handover units 60 are set up in block 4 G4.

[0062] like Figure 1 As shown, a wafer transport area D is formed in the region surrounded by blocks G1 to G4. A transport mechanism 70 is, for example, disposed in the wafer transport area D.

[0063] The transport mechanism 70 has a transport arm 70a that is movable, for example, in the Y direction, front-back direction, θ direction, and vertical direction. The transport mechanism 70 moves the transport arm 70a holding the wafer W within the wafer transport area D, enabling the transport of the wafer W to a designated cell within the surrounding areas G1, G2, G3, and G4. The transport mechanism 70 is, for example, as shown in... Figure 3 The diagram shows multiple units arranged vertically, for example, units capable of transporting the wafer W to the same height in each block G1 to G4.

[0064] In addition, a reciprocating transport mechanism 71 is provided in the wafer transport area D to transport the wafer W linearly between the third block G3 and the fourth block G4.

[0065] The reciprocating transport mechanism 71 enables the supported wafer W to move linearly in the Y direction, transporting the wafer W between the transfer unit 50 of the third zone G3 and the transfer unit 60 of the fourth zone G4 at the same height.

[0066] like Figure 1 As shown, a transport mechanism 72 is provided on the positive X-direction side of the third block G3. The transport mechanism 72 has a transport arm 72a that is movable in, for example, the front-back direction, the θ direction, and the vertical direction. The transport mechanism 72 moves the transport arm 70a holding the wafer W vertically, enabling the transport of the wafer W to each transfer unit 50 within the third block G3.

[0067] Interface station 5 is provided with a transport mechanism 73 and a transfer unit 74. The transport mechanism 73 has a transport arm 73a that can move, for example, in the Y direction, the θ direction, and the vertical direction. The transport mechanism 73 is able to hold the wafer W on the transport arm 73a and transport the wafer W between the transport mechanism 73 and the transfer units 60, transfer units 74 and exposure apparatus 4 in the fourth block G4.

[0068] The control unit 6 described above is, for example, a computer including a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores programs that control the operation of the various processing units, various transport mechanisms, and other drive systems described above to control the chip processing described later. Additionally, the program storage unit also stores programs that control the state determination processing described later. Alternatively, the above-mentioned programs may be programs recorded on a computer-readable storage medium H and installed from that storage medium H onto the control unit 6. Part or all of the program may also be implemented using dedicated hardware (circuit board).

[0069] Next, the chip processing using chip processing device 1 will be described.

[0070] In the wafer processing using the wafer processing apparatus 1, firstly, the wafer W is taken out from the cassette C on the cassette stage 12 by the transport unit 22 and transported to the handover unit 50 of the processing station 3.

[0071] Next, the wafer W is transported to the heat treatment unit 40 in block 2 G2 using the transport mechanism 70, where it undergoes temperature conditioning. Afterward, the wafer W is transported to the resist coating unit 31 in block 1 G1, where a resist film is formed on the wafer W. Then, the wafer W is transported to the heat treatment unit 40 for pre-applied bake (PAB). The same heat treatment is performed in the pre-baking process, the subsequent PEB process, and the post-baking process. However, the heat treatment units 40 used for each heat treatment are different.

[0072] Afterwards, the chip W is transported to the peripheral exposure unit 41 for peripheral exposure processing.

[0073] Next, the wafer W is transported to the exposure apparatus 4 for exposure processing with a specified pattern.

[0074] Next, wafer W is transported to heat treatment unit 40 for PEB processing. Afterward, wafer W is transported, for example, to development unit 30 for development processing. After development, wafer W is transported to heat treatment unit 40 for post-baking. Then, wafer W is transported to cell C on cell stage 12, completing a series of photolithography processes.

[0075] Next, use Figures 4-7 The structure of the above-mentioned conveying unit 22 will be described. Figure 4 This is a schematic side view showing the structure of the conveying unit 22. Figure 5 and Figure 6 These are, respectively, a top view and a bottom view showing the general structure of the fork-shaped component described later. Figure 7 This is a schematic cross-sectional view showing the structure of the nozzle, which will be described later.

[0076] like Figure 4 As shown, the conveying unit 22 has a base (also called a base) 101.

[0077] The base 101 supports the fork-shaped component in such a way that the fork-shaped component described later can move in the horizontal direction. The base 101 is configured to move along [a path / path] using the driving force generated by a drive unit (not shown) with an actuator, such as a motor. Figure 1 The conveying path 21 moves and rises and falls. The base 101 has a square cylindrical shell 111 with an internal cavity. Guide rails 112 extending in the horizontal direction are formed on both sides of the shell 111. Mounting components 113 are mounted on the guide rails 112.

[0078] The mounting member 113 is provided with a fork-shaped member 120 serving as a substrate holding portion for holding the wafer W. The mounting member 113 can slide along the guide rail 112 by a driving force generated by a drive unit (not shown) with an actuator, such as a motor. With this structure, the fork-shaped member 120 can move in the horizontal direction. Specifically, when loading or unloading a wafer into or out of the cassette C, the fork-shaped member 120 can be moved to an initial position where the fork-shaped member 120 is entirely outside the cassette C, and during this loading or unloading, it can be moved to a handover position, which is the position inside the cassette C when the wafer W is handed over between the fork-shaped member 120 and the cassette C.

[0079] like Figure 5 As shown, the front end portion of the fork-shaped component 120 has a two-pronged shape (two-pronged shape) with a lateral width smaller than the diameter of the wafer W.

[0080] The upper surface of the fork-shaped component 120 has multiple (three in the example shown) adsorption ports 121 and adsorption pads 122 surrounding each adsorption port 121. Furthermore, a first internal flow path 123 is formed inside the fork-shaped component 120. The front end of the first internal flow path 123 branches into three branches that connect to each adsorption port 121, and the root end of the first internal flow path 123 communicates with an exhaust mechanism (not shown). With this structure, the fork-shaped component 120 can adsorb and hold the wafer W through the adsorption ports 121.

[0081] The first internal flow path 123 constitutes an adsorption flow path for allowing gas from the adsorption port 121 to pass through during adsorption. Figure 4 and Figure 6 The diagram of the first internal flow path 123 is omitted.

[0082] Furthermore, such as Figure 6 As shown, a nozzle 124 is provided on the surface of the fork-shaped member 120, specifically on the lower surface of the fork-shaped member 120. There are multiple nozzles 124 (two in this example), with one nozzle provided in each of different areas. Specifically, for example, one nozzle 124 is provided on the lower surface of each forked portion on the front end side of the fork-shaped member 120.

[0083] like Figure 7 As shown, the nozzle 124 is provided to extend downward from the lower surface of the fork-shaped member 120. That is, the nozzle 124 is configured to extend toward the wafer W, which is an interfering element, when the wafer W is located below the fork-shaped member 120. The nozzle 124 has a flow hole 124a that extends from the front end to the root end (i.e., vertically). The diameter of the flow hole 124a is, for example, 0.5 mm to 3 mm. The nozzle 124 is fixed to the fork-shaped member 120, for example, by adhesive bonding.

[0084] Nozzle 124, for example Figure 7 As shown, it is formed in a cylindrical shape. The diameter of the nozzle 124 is, for example, 5 mm to 10 mm, and the height is, for example, 0.5 to 3 mm. The material of the nozzle 124 is, for example, the same material as that of the fork-shaped component 120.

[0085] Furthermore, a second internal flow path 125 is formed inside the fork-shaped component 120, with its front end connected to the nozzle 124. Specifically, the front end of the second internal flow path 125 is connected to the flow hole 124a of the nozzle 124. The front end of the second internal flow path 125 branches into two, with the front ends of each branch connected to the flow hole 124a. In this example, the first internal flow path 123 and the second internal flow path 125 are provided independently. Figure 5 The illustration of the second internal flow path 125 is omitted in the text.

[0086] In addition, such as Figure 4As shown, a relay flow path 113a, which connects the front end to the root end of the second internal flow path 125, is formed inside the mounting component 113.

[0087] Furthermore, a pipe 130, connected to the root end of the intermediate flow path 113a, is disposed within the housing 111 of the base 101. The root end of the pipe 130 is connected to an exhaust mechanism (not shown) that exhausts gas at a predetermined exhaust pressure. With this structure, gas surrounding the tip of the nozzle 124 can be drawn from the flow hole 124a into the nozzle 124, and the gas from the flow hole 124a can flow sequentially through the second internal flow path 125, the intermediate flow path 113a, and the pipe 130, and then be discharged through the exhaust mechanism (not shown). The second internal flow path 125, the intermediate flow path 113a, and the pipe 130 are connected to the nozzle 124 to form a nozzle flow path for gas flow.

[0088] Additionally, the piping 130 has a deformable portion 131 that moves with the fork-shaped member 120.

[0089] Furthermore, a flow sensor 140 is installed in the piping 130.

[0090] Flow sensor 140 measures the flow rate of gas flowing in piping 130. Flow sensor 140 is, for example, disposed in piping 130 on the side opposite to the second internal flow path 125, separated by the aforementioned deformable portion 131.

[0091] In addition, in this example, one flow sensor 140 is shared for the two flow holes 124a.

[0092] The measurement results from the flow sensor 140 are output to the control unit 6.

[0093] Furthermore, the mounting component 113 and the fork-shaped component 120 are, for example, made of aluminum. Additionally, for example, grooves are formed by machining the aluminum sheet that forms the outline of the mounting component 113 and the fork-shaped component 120, and the portion on one side of the groove opening is filled to form the intermediate flow path 113a and the second internal flow path 125. The fork-shaped component 120 may also be made of ceramic material.

[0094] Based on the measurement results from the flow sensor 140, the control unit 6 determines the state of the distance between the fork-shaped member 120 and the wafer W below it, which is an interference object. Specifically, it determines the state of the distance between the lower surface of the fork-shaped member 120 and the upper surface of the wafer W. This determination may include, for example, determining whether the fork-shaped member 120 is in contact with the wafer W below it. Alternatively, it may determine whether the fork-shaped member 120 is approaching the wafer W below it. In the following example, the determination of whether the fork-shaped member 120 is in contact with the wafer W below it is performed.

[0095] In addition, when the measurement result of the flow sensor 140 meets the specified conditions, the control unit 6 determines that the fork-shaped component 120 is in contact with the wafer W below it.

[0096] The reason for making the above-mentioned contact determination based on the measurement results of the flow sensor 140 is as follows. That is, if... Figure 8 As shown, the distance L between the flat tip surface of the nozzle 124 and the upper surface of the wafer W is proportional to the effective cross-sectional area A of the gas flowing into the flow hole 124a. When gas is drawn from the flow hole 124a at a predetermined exhaust pressure, the effective cross-sectional area A is approximately proportional to the flow rate of the gas flowing into the flow hole 124a when the nozzle 124 is close to the wafer W. Therefore, if the distance L between the flat tip surface of the nozzle 124 and the upper surface of the wafer W is short, the flow rate of the gas flowing into the flow hole 124a decreases, resulting in a decrease in the flow rate measured by the flow sensor 140 installed in the piping 130. Conversely, if the distance L is long, the flow rate of the gas flowing into the flow hole 124a increases, resulting in an increase in the flow rate measured by the flow sensor 140 installed in the piping 130. In other words, the flow rate measured by the flow sensor 140 changes accordingly with the distance L. This is the reason.

[0097] Figure 9 This is a graph showing the relationship between the distance from the fork-shaped component (hereinafter referred to as "simulated fork-shaped component") with the same shape as the fork-shaped component 120 to the interference object and the actual measurement result of the flow sensor. The simulated fork-shaped component is equipped with a nozzle (hereinafter referred to as "simulated nozzle") with the same shape as the nozzle 124 having a flow hole 124a.

[0098] Figure 9 The diagram shows the results measured by a flow sensor mounted on the piping connecting the simulated nozzle and the exhaust mechanism when gas is drawn through a flow orifice formed in the simulated nozzle at a certain exhaust pressure. The horizontal axis represents the distance from the simulated fork-shaped component to the interfering object, and the vertical axis represents the output voltage of the flow sensor, which indicates the flow measurement result.

[0099] Depend on Figure 9 It is known that, regardless of the diameter of the flow orifice and the exhaust pressure of the simulated nozzle, when the distance from the simulated nozzle to the object of interference is less than 200 μm, the output voltage of the flow sensor, i.e., the flow rate measured by the flow sensor, decreases as this distance shortens. Based on this result, it is known that, as in this embodiment, it is possible to determine whether the fork-shaped component 120 is in contact with the wafer W below it based on the measurement results of the flow sensor 140.

[0100] Figure 10This is a graph showing the relationship between the opening area of ​​the flow orifice of the simulated nozzle and the actual measurement results of the flow sensor.

[0101] Figure 10 The horizontal axis represents the opening area of ​​the flow orifice of the simulated nozzle, and the vertical axis represents the output voltage of the flow sensor, which represents the flow measurement result.

[0102] Figure 10 The line M represents the result when a simulated nozzle is set up and the flow orifice of the simulated nozzle is opened.

[0103] Figure 10 Points P1 to P3 represent the results when two simulated nozzles are set up in the same manner as in this embodiment, and a common flow sensor is installed on the pipeline (pipeline) that is connected to the two simulated nozzles at the front end and merges at the root end. Point P1 represents the result when both flow orifices of the two simulated nozzles are open, point P2 represents the result when one flow orifice is closed, and point P3 represents the result when both flow orifices are closed. The diameter of the flow orifice of each simulated nozzle is 0.7 mm when the results at points P1 to P3 are obtained.

[0104] get Figure 10 The exhaust pressure at that time was -20 kPa.

[0105] Here, the total opening area of ​​the flow holes when two flow holes with a diameter of 0.7 mm are set is approximately equal to the opening area of ​​the flow holes when one flow hole with a diameter of 1.0 mm is set.

[0106] As shown in line M, with one simulated nozzle, if the exhaust pressure is set to -20 kPa, the output voltage from the flow sensor changes linearly (response) relative to the opening area within a range where the opening area of ​​the flow orifice is smaller than the diameter of the flow orifice by 1 mm.

[0107] In addition, such as Figure 10 As shown, the output voltage from the common flow sensor when two simulated nozzles with flow holes of 0.7 mm in diameter are set and the two flow holes are opened (point P1) is approximately equal to the output voltage from the flow sensor when one simulated nozzle with a flow hole of 1.0 mm in diameter is set and the flow hole is opened.

[0108] In addition, the output voltage from the common flow sensor when two simulated nozzles with flow orifices of 0.7 mm in diameter are set and one flow orifice is closed (point P2) is approximately equal to the output voltage from the flow sensor when one simulated nozzle with a flow orifice of 0.7 mm in diameter is set and the flow orifice is open.

[0109] When two simulated nozzles with flow orifices of 0.7 mm in diameter are set up and both flow orifices are closed (point P3), the output voltage from the shared flow sensor is approximately zero.

[0110] Based on this result, it can be seen that when multiple nozzles 124 are provided, if the exhaust pressure is set in a manner in which the output voltage from the common flow sensor 140 changes linearly with respect to the opening area of ​​the flow orifice 124a within a range below the total opening area of ​​the flow orifice 124a, then the blockage status of each flow orifice 124a can be determined. That is, according to Figure 10 The results show that if an appropriate exhaust pressure is set, then as in this embodiment, when multiple nozzles 124 are provided on the fork-shaped component 120, and a flow sensor 140 is provided on the pipe 130 connecting the two nozzles 124 and the exhaust mechanism, it is possible to determine whether the fork-shaped component 120 is in contact with the wafer W below based on the measurement results of the flow sensor 140.

[0111] Next, the state determination process of the wafer processing apparatus 1 will be explained. This state determination process concerns the determination of the distance between the wafer W located below the fork-shaped member 120 within the housing C and the fork-shaped member 120. More specifically, this state determination process determines whether the wafer W located below the fork-shaped member 120 within the housing C is in contact with the fork-shaped member. This determination process is performed, for example, during maintenance, when the apparatus is started, or during mass production processing of the wafer processing apparatus 1, i.e., during apparatus operation.

[0112] (Determine whether to obtain the data)

[0113] First, the control unit 6 causes the exhaust mechanism connected to the nozzle 124 to start exhausting at a predetermined exhaust pressure, and moves the fork-shaped member 120 that is not holding the wafer W from the aforementioned initial position relative to the box C to the aforementioned handover position.

[0114] Then, during the period when the fork-shaped member 120 moves as described above, the control unit 6 continuously acquires the flow measurement value (from the output voltage of the flow sensor 140) of the flow sensor 140. That is, the control unit 6 acquires the timing data of the flow measurement value obtained by the flow sensor 140 during the period when the fork-shaped member 120 moves (hereinafter referred to as "timeline data of the judgment object about the fork-shaped member 120").

[0115] (judge)

[0116] Then, based on the timing data of the fork-shaped component 120, the control unit 6 determines whether the fork-shaped component 120 has made contact with the wafer W below it. Specifically, it determines whether the fork-shaped component 120 has made contact with the wafer W in the cassette C during its movement. In addition, when the timing data of the fork-shaped component 120 meets the predetermined conditions (hereinafter referred to as the "determination conditions"), the control unit 6 determines that the fork-shaped component 120 has made contact with the wafer W in the cassette C during its movement.

[0117] The following are specific examples illustrating the above judgment conditions.

[0118] In judgment conditions 3 to 5 of the following judgment conditions 1 to 5, reference timing data is used, while in judgment conditions 1 and 2, reference timing data is not used. Reference timing data is the timing data of the flow rate measured by the flow sensor 140 during the period when the fork-shaped component 120 moves in the same direction as when the timing data of the judgment object is obtained. It is data under normal conditions where the fork-shaped component 120 will not come into contact with any interfering object during movement. Specifically, for example, the reference timing data can be acquired by pre-emptively making the fork-shaped component 120 reciprocate within a space that does not interfere with the fork-shaped component 120. Here, "space that does not interfere with the fork-shaped component 120" refers, for example, to the space inside an empty box C placed on the box mounting stage 12. Alternatively, a module with no internal structures can be separately installed in the wafer processing device 1, and the space within that module can be the aforementioned "space that does not interfere with the fork-shaped component 120". Furthermore, the reference timing data can be acquired, for example, when the device is started, or periodically.

[0119] (Judgment Condition 1)

[0120] Judgment condition 1 is a condition in which the measured value or its derivative (specifically the time derivative) of the flow sensor 140 contained in the timing data of the judgment object of the fork-shaped component 120 is less than a predetermined threshold.

[0121] (Judgment Condition 2)

[0122] Judgment condition 2 is a condition obtained by performing a singular spectrum transformation on the time series data of the judgment object 120 regarding the fork-shaped component 120, such that the degree of change at each time t exceeds a threshold.

[0123] In the spectral transformation, a sliding window is used to acquire partial time-series data. Furthermore, a test matrix is ​​generated using partial time-series data surrounding time t, and a trajectory matrix (rows and columns) is generated using partial time-series data before time t. The difference between the test matrix and the trajectory matrix is ​​then calculated as the degree of change at time t.

[0124] (Judgment Condition 3)

[0125] Judgment condition 3 is a condition for using the statistical values ​​of the reference time series data.

[0126] Specifically, judgment condition 3 is a condition that uses the average value μ and deviation σ of the pre-calculated measured values ​​as the statistical values ​​of the reference time series data, and is a condition that includes measured values ​​outside the range of μ±3σ in the time series data of the judgment object regarding the fork-shaped component 120.

[0127] Alternatively, judgment condition 3 could also be a condition where the Mahalanobis distance of the measurements contained in the judgment object's time series data exceeds a threshold, calculated based on the average value μ and deviation σ of the measurements in the reference time series data.

[0128] In judgment condition 3, the derivative of the measured value can be used instead of the measured value, or both the measured value and its derivative can be used.

[0129] (Judgment Condition 4)

[0130] Judgment condition 4 is that the similarity between the time series data of the judgment object and the most recent reference time series data is less than a threshold. The time series data of the flow measurement value obtained by the flow sensor 140 can also be described as a waveform representing the time variation of the aforementioned measurement value.

[0131] The aforementioned similarity can be calculated using, for example, Dynamic Time Warping (DTW). In DTW, after calculating the distances between the data points of two time series, the time series are expanded along the time axis in a manner that minimizes the distance between the two data points. The distance at which the distance is minimized is then taken as the similarity score.

[0132] By using dynamic time warping, even when the reference time series data and the judgment object time series data have different data lengths, and when the time change progression (i.e. the shape of the waveform) in the reference time series data and the judgment object time series data are similar but the phases are different, the similarity can be obtained more accurately.

[0133] (Judgment Condition 5)

[0134] Condition 5 is the condition for using a model obtained by machine learning based on multiple reference time series data.

[0135] As a model described above, an autoencoder, which is one type of neural network, can be used. An autoencoder encodes input data and learns to reproduce the original input data when decoding the encoded data.

[0136] When normal timing data is input into an autoencoder that has learned normal timing data, the timing data output from the autoencoder has a small error relative to the input timing data. In contrast, because abnormal timing data cannot be reproduced in the autoencoder, the timing data output from the autoencoder has a larger error relative to the input timing data when abnormal timing data is input.

[0137] Therefore, when using an autoencoder as the above model, for example, the condition that the error of the timing data output by the autoencoder relative to the timing data input to the autoencoder exceeds a threshold is used as judgment condition 5.

[0138] As described above, the wafer processing apparatus 1 of this embodiment includes a fork-shaped member 120, a nozzle 124 disposed on the lower surface of the fork-shaped member for passing gas, a second internal flow path 125, a relay flow path 113a, and a piping 130 serving as a nozzle flow path connected to the nozzle 124 for gas flow. The wafer processing apparatus 1 also includes a flow sensor 140 that measures the flow rate of gas flowing in the nozzle flow path (specifically, the piping 130); and a control unit that, based on the flow rate measured by the flow sensor 140, determines the state of the distance between the wafer W (i.e., an interfering object) located below the fork-shaped member 120 within the housing C and the fork-shaped member 120. The flow rate of the gas flowing in the piping 130 used for the above determination does not change significantly due to the conductivity, dielectric constant, etc., of the wafer W within the housing C, which is the interfering object. Therefore, according to this embodiment, the determination of the state of the distance between the wafer W within the housing C and the fork-shaped member 120 can be made accurately without depending on the conductivity and dielectric constant of the wafer W.

[0139] In addition to the method of this embodiment, another method is considered for determining whether the fork-shaped component is in contact with the interfering object. Specifically, a method is considered where a vibration sensor is installed on the fork-shaped component, allowing the sensor to detect vibrations when the fork-shaped component contacts the interfering object, and determining whether the fork-shaped component is in contact with the interfering object based on the sensor's detection results. However, this method sometimes makes incorrect judgments when the fork-shaped component vibrates without contact. In contrast, if the judgment conditions 2 to 5 described above are used, incorrect judgments will not be made even when the fork-shaped component vibrates without contact.

[0140] In this embodiment, the flow sensor 140 is disposed in the portion of the piping 130 opposite to the second internal flow path 125, separated by the aforementioned deformable portion 131 (i.e., the deformable portion 131 is located between the flow sensor 140 and the second internal flow path 125).

[0141] Therefore, compared to the case where the flow sensor 140 is placed in the second internal flow path 125 and the relay flow path 113a, it is easier to extend the signal line to the flow sensor 140, and the arrangement of the flow sensor 140 itself is also easier. Where the aforementioned deformable portion 131 exists between the flow sensor 140 and the second internal flow path 125, in other words, when a bend exists upstream of the flow sensor 140, it can be inferred that a change in pressure loss occurs at the bend, resulting in a change in flow rate, and thus a deterioration in the S / N ratio of the flow sensor 140's measurement result. However, the inventors of this invention conducted in-depth research and discovered that a sufficiently high S / N ratio can be obtained compared to the flow rate change caused by pressure loss variation, therefore the structure described above was adopted.

[0142] Next, use Figure 11 and Figure 12 This illustrates another example of a fork-shaped component. Figure 11 This represents an example of a fork-shaped component that has already been set (configured). Figure 12 It means in Figure 11 The diagram shows the situation where the fixture described later is installed on the existing fork-shaped component to replace the adsorption component described later.

[0143] like Figure 11 As shown, the fork-shaped component 200 and Figure 4 The fork-shaped component 120 shown also has an adsorption port 121 and an adsorption pad 122. However, unlike the fork-shaped component 120, the fork-shaped component 200 does not have a nozzle 124 for status determination.

[0144] Specifically, the fork-shaped component 200 includes an adsorption component 201 and a fork-shaped component body 202. The external shape of the fork-shaped component 200 is similar to... Figure 5The fork-shaped component 120 shown is roughly the same, with the front end having a two-pronged shape.

[0145] The adsorption component 201 is detachably mounted to the fork-shaped component body 202. Specifically, the adsorption component 201 is detachably mounted to the lower surface of the fork-shaped component body 202. The adsorption component 201 is fixed to the fork-shaped component body 202, for example, by screwing. The upper surface of the front end side of the adsorption component 201 is not covered by the fork-shaped component body 202, and an adsorption port 121 with an upward opening is provided on the front end side of the adsorption component 201. In addition, an adsorption pad 122 is provided on the upper surface of the front end side of the adsorption component 201 to cover the area around the opening of the adsorption port 121. An internal flow path 201a is formed inside the adsorption component 201, with its front end connected to the adsorption port 121 to allow gas to flow.

[0146] The fork-shaped component body 202 is provided with a body-side internal flow path 202a, whose front end is connected to the component-side internal flow path 201a and whose root end is connected to the exhaust mechanism (not shown). The component-side internal flow path 201a and the body-side internal flow path 202a constitute... Figure 4 The first internal flow path 123 of the fork-shaped component 120 shown. That is, the internal flow path 201a on the component side and the internal flow path 202a on the main body side constitute the adsorption flow path.

[0147] When determining the state of the distance between the existing fork-shaped component 200 and the wafer W located below it, such as Figure 12 As shown, the adsorption component 201 is removed and replaced with a fixture (also called an instrument) 210.

[0148] The jig 210 is detachably mounted to the fork-shaped component body 202. Specifically, the jig 210 is detachably mounted to the lower surface of the fork-shaped component body 202. A nozzle 124 is provided on the lower surface of the jig 210. In addition, an internal flow path 211 is formed inside the jig 210, with its front end connected to the nozzle 124 to allow gas flow. Moreover, when the jig 210 is mounted to the fork-shaped component body 202, the nozzle 124 communicates with the body-side internal flow path 202a via the jig internal flow path 211. Therefore, the body-side internal flow path 202a and the jig internal flow path 211 together constitute... Figure 4 The second internal flow path 125 of the fork-shaped component 120 shown. That is, the internal flow path 202a on the main body side also serves as the flow path for the nozzle. Therefore, by installing a flow sensor on the pipe connecting the exhaust mechanism that exhausts at a predetermined exhaust pressure to the internal flow path 202a on the main body side, and using the fixture 210, it is possible to determine the state of the distance between the fork-shaped component 200 and the wafer W located below it.

[0149] Furthermore, when a total of four adsorption components 201 are provided as described above, the fixture 210 is installed, for example, in place of the two adsorption components 201 on the front end side of the fork-shaped component 200. When the above determination is made, the adsorption port 121 of the adsorption component 201 on the root end side of the fork-shaped component 200, which remains in the installed state, is blocked.

[0150] Figure 13 This is another example of the shape of a nozzle.

[0151] Figure 13 The nozzle 301 is shaped like a cone that tapers from the root end toward the front end. By forming it in this shape, the area of ​​the front end face of the nozzle 301 can be reduced, and the root end side of the nozzle 301 can be made thicker.

[0152] If the area of ​​the front end face of the nozzle 301 is large, when the front end face of the nozzle 301 is close to the upper surface of the wafer W below the nozzle 301, i.e. below the fork-shaped member 120, the force of the gas attracted by the nozzle 301 may sometimes act on the wafer W and cause it to be lifted. In contrast, by reducing the area of ​​the front end face of the nozzle 301, the area on the upper surface of the wafer W where the force of the gas attracted by the nozzle 301 acts is smaller, thus reducing the total attractive force acting on the wafer W. As a result, it is possible to prevent the wafer W from being lifted.

[0153] In addition, by making the root end of the nozzle 301 thicker, it is possible to prevent the nozzle 301 from breaking when it comes into contact with the wafer W.

[0154] In the above example, a determination was made regarding the distance between the fork-shaped components 120 and 200 and the wafer W located below them. However, a determination could also be made regarding the distance between the fork-shaped components 120 and 200 and other components located below them (such as structures within the box C).

[0155] Alternatively, the nozzle 124 can be disposed on the lower surface of the fork-shaped component to determine the state of the distance between the fork-shaped component and the component located above it. Or the nozzle 124 can be disposed on the front surface or side surface of the fork-shaped component to determine the state of the distance between the fork-shaped component and the component located in front of or to the side of it (e.g., the inner wall or side wall of box C).

[0156] In the previous description, nozzles 124 and 301 were provided on the fork-shaped component 120 of the conveying mechanism 23, but the same nozzles can also be provided on other parts of the conveying mechanism 23 (e.g., the base 101). Furthermore, it is also possible to determine the state of the distance between other parts of the conveying mechanism and the interfering object. Alternatively, the same nozzles can be provided on other conveying mechanisms such as the conveying mechanism 70 to determine the state of the distance between those other conveying mechanisms and the interfering object.

[0157] Furthermore, the same nozzle can be placed on a component other than the conveying mechanism that moves relative to other parts to determine the state of the distance between that component and the interfering object.

[0158] Figure 14 This is a diagram showing an example of a nozzle being placed within the resist coating unit 32.

[0159] like Figure 14 As shown, the resist coating unit 32 has a processing container 400 that can seal the interior. A wafer W loading / unloading port (not shown) is formed on the side of the processing container 400.

[0160] A rotary chuck (i.e., rotary suction cup) 401 for holding the wafer W is provided inside the processing container 400. This rotary chuck 401 is also capable of rotating the held wafer W. For example, the rotary chuck 401 can be rotated at a predetermined speed by a chuck drive unit 402 with an actuator, such as a motor. In addition, the chuck drive unit 402 is provided with a lifting drive mechanism, such as a cylinder, so that the rotary chuck 401 can be raised and lowered.

[0161] Additionally, a cup 403, serving as a surrounding component, is provided within the processing container 400, positioned outside the rotary chuck 401 to surround the wafer W held by the rotary chuck 401. The cup 403 includes an outer cup 404 that catches and recovers liquid spilled or falling from the wafer W; and an inner cup 405 located on the inner periphery of the outer cup 404. An opening 406 is formed in the upper part of the outer cup 404, allowing the wafer W to pass through before and after the wafer W is transferred relative to the rotary chuck 401.

[0162] Furthermore, a release nozzle 407 for releasing resist liquid to the wafer W is provided inside the processing container 400, and the release nozzle 407 can move in the vertical and horizontal directions.

[0163] In order to determine the distance between the wafer W held by the rotating chuck 401 and the cup 403, and specifically, to determine the distance between the wafer W and the inner cup 405, the resist coating unit 32 provides a nozzle 408, which is the same as the nozzle 124 mentioned above, on the surface of the cup 403. Specifically, the nozzle 408 is provided on the upper surface of the inner cup 405.

[0164] Furthermore, the resist coating unit 32 is provided with a piping 409 that connects to the nozzle 408 to form a conduit for gas flow, and an exhaust mechanism that exhausts gas at a predetermined exhaust pressure is connected to the nozzle 408 via the piping 409. Therefore, gas surrounding the tip of the nozzle 408 can be drawn from the flow hole of the nozzle 408 into the nozzle 408. Moreover, a flow sensor 410 is provided in the piping 409.

[0165] In this example, a determination is made regarding the distance between the wafer W held by the rotating chuck 401 and the inner cup 405 located below it, based on the measurement results of the flow sensor 410. Therefore, the above determination can be made correctly regardless of the conductivity, dielectric constant, etc. of the inner cup 405.

[0166] Furthermore, in the examples above, status checks were performed during maintenance, but for example, when using... Figure 4 In the case of the fork-shaped component 120 shown, this process can also be carried out during the aforementioned wafer processing.

[0167] Furthermore, in the above examples, gas around the tips of nozzles 124, 301, and 408 is drawn in via nozzles 124, 301, and 408 at a predetermined exhaust pressure. Alternatively, gas can be released from the tip of a nozzle used for status determination. For example, if a status determination nozzle is provided on the surface of the inner cup 405 or cup 403, the gas can be released from the tip of the nozzle. This prevents the intake of processing liquids such as corrosion resist liquid along with the gas from the nozzle.

[0168] The embodiments disclosed herein should be considered illustrative rather than restrictive in all respects. The above embodiments may be omitted, substituted, or modified in various ways without departing from the inventive content and spirit of this specification.

Claims

1. A substrate processing apparatus for processing a substrate, characterized in that it comprises: Functional components that form part of the substrate processing apparatus; A nozzle disposed on the surface of the functional part for allowing gas to pass through; A flow path for the nozzle, which is connected to the nozzle of the functional unit, for allowing the gas to flow; A flow sensor that measures the flow rate of gas flowing in the flow path of the nozzle; and The control unit, based on the measurement results of the flow sensor, determines the state of the distance between the interfering object and the functional unit. The functional part is the substrate holding part of the substrate conveying mechanism. The nozzle is disposed on the surface of the substrate holding portion. The control unit, as part of the determination, determines whether the interfering object is in contact with the substrate holding part. When the measurement result of the flow sensor meets the specified conditions, the control unit determines that the interfering object is in contact with the substrate holding part.

2. The substrate processing apparatus as described in claim 1, characterized in that: The substrate holding part can adsorb and hold the substrate through the adsorption port. An adsorption flow path and a nozzle flow path are respectively provided inside the substrate holding part. The adsorption flow path is connected to the adsorption port and provides gas flow during adsorption.

3. The substrate processing apparatus as described in claim 1, characterized in that: The substrate holding part can adsorb and hold the substrate through the adsorption port. An adsorption flow path is provided inside the substrate holding section. This adsorption flow path is connected to the adsorption port and allows gas to flow during adsorption. The nozzle is disposed in a fixture that is detachable from the substrate holding portion. When the fixture is installed on the substrate holding part, the nozzle is connected to the adsorption flow path, which also serves as the nozzle flow path.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The conveying mechanism has: The substrate supports the substrate holding portion in a manner that allows the substrate holding portion to be movable; An internal flow path for the nozzle is formed within the substrate holding portion; and Piping connected to the internal flow path, forming the flow path for the nozzle within the substrate. The piping has a deformable portion that can deform as the substrate holding portion moves. The flow sensor is located in the piping, on the opposite side of the internal flow path, separated from the deformable portion.

5. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that: The nozzle is a conical shape that tapers from the root end to the front end.

6. The substrate processing apparatus as described in claim 1, characterized in that: The specified condition is that the measured value of the flow sensor is less than a threshold.

7. The substrate processing apparatus as described in claim 1, characterized in that: The specified condition is that the degree of variation obtained by performing a singular spectrum transformation on the time-series data of the flow sensor's measurements exceeds a threshold.

8. The substrate processing apparatus as described in claim 1, characterized in that: The specified conditions are the use of reference timing data and judgment object timing data, wherein the reference timing data is the timing data of the flow sensor's measurement value under normal conditions, and the judgment object timing data is the timing data of the flow sensor's measurement value of the judgment object.

9. The substrate processing apparatus as described in claim 8, characterized in that: The specified condition is that the similarity between the time series data of the judgment object and the most recent reference time series data is less than a threshold.

10. The substrate processing apparatus as described in claim 9, characterized in that: The similarity is calculated using dynamic time warping.

11. The substrate processing apparatus as claimed in claim 8, characterized in that: The specified conditions are conditions for using a model obtained by machine learning based on the reference time series data.

12. The substrate processing apparatus as claimed in claim 11, characterized in that: The model is an autoencoder.

13. The substrate processing apparatus as described in claim 8, characterized in that: The reference timing data is the timing data of the flow sensor's measurement values ​​obtained when the functional unit is operating in the absence of interference.

14. A substrate processing apparatus for processing a substrate, characterized in that it comprises: Functional components that form part of the substrate processing apparatus; A nozzle disposed on the surface of the functional part for allowing gas to pass through; A flow path for the nozzle, which is connected to the nozzle of the functional unit, for allowing the gas to flow; A flow sensor that measures the flow rate of gas flowing in the flow path of the nozzle; and The control unit, based on the measurement results of the flow sensor, determines the state of the distance between the interfering object and the functional unit. The functional unit is a surrounding component that is disposed inside a substrate processing unit that holds and processes the substrate, and that surrounds the substrate during processing. The nozzle is disposed on the surface of the surrounding component. The control unit, as part of the determination, determines whether the interfering object is in contact with the surrounding component. When the measurement result of the flow sensor meets the specified conditions, the control unit determines that the interfering object is in contact with the surrounding component.

15. The substrate processing apparatus as described in claim 1 or 14, characterized in that: There are multiple nozzles, and each nozzle is disposed in a different area on the surface of the functional part. The control unit makes the determination based on the measurement results of a shared flow sensor connected to the plurality of nozzles.

16. A method for determining the state of a substrate processing apparatus, the substrate processing apparatus being used to process a substrate, the method being characterized in that: The substrate processing apparatus includes: Functional components that form part of the substrate processing apparatus; A nozzle disposed on the surface of the functional part for allowing gas to pass through; A flow path for the nozzle, which is connected to the nozzle of the functional unit, for allowing the gas to flow; and a flow sensor that measures the flow rate of the gas flowing in the flow path of the nozzle. The state determination method includes: A process for measuring the flow rate of gas flowing in the flow path of the nozzle; and Based on the measurement results of the flow sensor, a judgment process is performed to determine the state of the distance between the interfering object and the functional unit. The functional part is the substrate holding part of the substrate conveying mechanism. The nozzle is disposed on the surface of the substrate holding portion. In the judgment process, the judgment includes determining whether the interfering object is in contact with the substrate holding portion. In the judgment process, when the measurement result of the flow sensor meets the specified conditions, it is determined that the interference object is in contact with the substrate holding part.

17. A method for determining the state of a substrate processing apparatus, the substrate processing apparatus being used to process a substrate, the method being characterized in that: The substrate processing apparatus includes: Functional components that form part of the substrate processing apparatus; A nozzle disposed on the surface of the functional part for allowing gas to pass through; A flow path for the nozzle, which is connected to the nozzle of the functional unit, for allowing the gas to flow; and a flow sensor that measures the flow rate of the gas flowing in the flow path of the nozzle. The state determination method includes: A process for measuring the flow rate of gas flowing in the flow path of the nozzle; and Based on the measurement results of the flow sensor, a judgment process is performed to determine the state of the distance between the interfering object and the functional unit. The functional unit is a surrounding component that is disposed inside a substrate processing unit that holds and processes the substrate, and that surrounds the substrate during processing. The nozzle is disposed on the surface of the surrounding component. In the judgment process, the judgment includes determining whether the interfering object is in contact with the surrounding component. In the judgment process, when the measurement result of the flow sensor meets the specified conditions, it is determined that the interfering object is in contact with the surrounding component.

18. A readable computer storage medium, characterized in that: The device stores a program that can be operated on a computer that controls the control unit of the substrate processing apparatus to cause the substrate processing apparatus to perform the state determination method of the substrate processing apparatus as described in claim 16 or 17.

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