Temperature compensation method and semiconductor process apparatus

Abstract

The embodiment of the present application provides a temperature compensation method and a semiconductor process equipment, which are applied to the technical field of semiconductor equipment, and the method comprises the following steps: acquiring a temperature control mode and a temperature control configuration parameter of a current process step; in the case that the temperature control mode indicates temperature reduction, acquiring an actual temperature of a temperature control area by a temperature sensor; determining a target temperature of the temperature control area in the temperature reduction process based on the actual temperature of the temperature control area and the temperature control configuration parameter; determining a target temperature control area with an actual temperature lower than the target temperature from a plurality of temperature control areas; and controlling a heater in the target temperature control area to heat the target temperature control area, so that the actual temperature of the target temperature control area reaches the target temperature of the target temperature control area. In the temperature reduction process of the plurality of temperature control areas, when the actual temperature of the temperature control area is lower than the target temperature, the heater is controlled to heat the temperature control area, and the temperature in the temperature control area is supplemented, so that the temperatures in the plurality of temperature control areas can be kept consistent.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a temperature compensation method and semiconductor process equipment. Background Technology

[0002] With the rapid development of the semiconductor industry, higher demands are being placed on the production efficiency and yield of semiconductor process equipment. Semiconductor process equipment typically involves processes such as wafer oxidation, chemical vapor deposition, diffusion, and annealing, which require high accuracy in temperature control.

[0003] To facilitate accurate temperature control, semiconductor process equipment typically incorporates multiple temperature control zones, each equipped with its own temperature sensor and heater. During the heating process, the heater precisely heats the temperature control zone, ensuring precise temperature rise. However, during the cooling process, the varying locations and cooling rates of the different temperature control zones lead to inconsistent cooling across them. Summary of the Invention

[0004] The technical problem to be solved by the embodiments of the present invention is the inconsistent cooling of multiple temperature control zones during the cooling process of semiconductor process equipment.

[0005] To address the aforementioned problems, this invention discloses a temperature compensation method applied to a controller in a semiconductor process equipment. The semiconductor process equipment includes multiple temperature control zones; each temperature control zone is equipped with a corresponding heater and a temperature sensor; the method includes:

[0006] Obtain the temperature control method and temperature control configuration parameters for the current process step;

[0007] When the temperature control mode indicates cooling, the actual temperature of the temperature control area is obtained through the temperature sensor.

[0008] Based on the actual temperature of the temperature control area and the temperature control configuration parameters, the target temperature of the temperature control area during the cooling process is determined, and a target temperature control area with an actual temperature lower than the target temperature is determined from the plurality of temperature control areas.

[0009] The heaters within the target temperature control area are controlled to heat the target temperature control area, so that the actual temperature of the target temperature control area reaches the target temperature of the target temperature control area.

[0010] This invention discloses a semiconductor process apparatus, which includes a controller and multiple temperature control zones. Each temperature control zone is equipped with a corresponding heater and a temperature sensor. The controller is configured to execute the temperature compensation method described above.

[0011] Compared with the prior art, the present invention has the following advantages: The controller acquires the temperature control mode and temperature control configuration parameters of the current process step. When the temperature control mode indicates cooling, it acquires the actual temperature of the temperature control zone through a temperature sensor. Based on the actual temperature of the temperature control zone and the temperature control configuration parameters, it determines the target temperature of the temperature control zone during the cooling process. It then identifies a target temperature control zone from multiple temperature control zones whose actual temperature is lower than the target temperature. The controller controls the heater within the target temperature control zone to heat the target temperature control zone, so that the actual temperature of the target temperature control zone reaches the target temperature. During the cooling process of multiple temperature control zones, when the actual temperature of a temperature control zone is lower than the target temperature, the controller controls the heater to heat the temperature control zone, supplementing the temperature within the temperature control zone, thus maintaining a consistent temperature across multiple temperature control zones. Attached Figure Description

[0012] Figure 1 This diagram illustrates a cooling curve of a semiconductor process apparatus in the prior art.

[0013] Figure 2 This embodiment shows a schematic diagram of the structure of a semiconductor process equipment.

[0014] Figure 3 This embodiment shows a flowchart of the steps of a temperature compensation method provided in this example;

[0015] Figure 4 This embodiment shows a schematic diagram of the cooling curve of a semiconductor process equipment.

[0016] Figure 5 A schematic diagram of the heating power of a heater provided in this embodiment is shown. Detailed Implementation

[0017] To make the above-mentioned objectives, features and advantages of the embodiments of the present invention more apparent and understandable, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation methods.

[0018] First, let's take a vertical furnace in semiconductor processing equipment as an example to briefly introduce semiconductor processing equipment. A vertical furnace can perform processes such as oxidation, chemical vapor deposition, diffusion, and annealing on wafers. A vertical furnace includes a furnace body and process tubes located inside the furnace body, forming a heat exchange chamber between the furnace body and the process tubes. The process tubes are used to hold wafer boats, which can carry multiple wafers. To accurately control the temperature inside the vertical furnace, the wafers in the wafer boats are processed, and the furnace body is divided into multiple temperature-controlled zones from top to bottom along the axis of the process tubes. During the cooling process in the vertical furnace, because each temperature-controlled zone is located in a different position, the temperature of the cooling gas entering each zone is different, resulting in different cooling rates for each zone, making it impossible to achieve consistent cooling. Figure 1 As shown, Figure 1 This diagram illustrates a cooling profile of a semiconductor process apparatus in the prior art. Figure 1 The horizontal axis represents time, and the vertical axis represents temperature. During the cooling process, the temperature in each temperature control zone needs to be controlled to decrease from the initial cooling temperature to the final cooling temperature within a preset cooling time. The first temperature Y1 represents the initial cooling temperature, the second temperature Y2 represents the final cooling temperature, the first time T1 represents the initial cooling time, the second time T2 represents the final cooling time, and the third time T3 represents any point in time during the cooling process. The time difference between T1 and T2 is the cooling time. Since the initial cooling temperature, the final cooling temperature, and the cooling time are the same for multiple temperature control zones, ideally, the cooling curve of each temperature control zone will... Figure 1 The target cooling curve 101 is consistent with the target cooling curve. However, during the actual cooling process, due to the different cooling rates of each temperature control zone, the cooling curves of each temperature control zone are inconsistent with the target cooling curve. Figure 1 Cooling curves 102, 103, 104, 105, and 106 represent the cooling curves of different temperature control zones in the vertical furnace. Taking the third time point T3 as an example, due to the different cooling rates of each temperature control zone, the temperatures of multiple temperature control zones are inconsistent at the third time point T3 during the cooling process. Inconsistent temperatures across multiple temperature control zones can reduce process quality, for example, affecting the uniformity of the film thickness on the wafer and even impacting the film quality itself.

[0019] To address the above problems, embodiments of the present invention provide a semiconductor process apparatus. For example... Figure 2 As shown, Figure 2This embodiment shows a schematic diagram of a semiconductor process equipment. The semiconductor process equipment, such as a vertical furnace for processing wafers through oxidation, chemical vapor deposition, diffusion, annealing, etc., includes a furnace body 201. A heat insulation layer 203 is disposed around the process tube 202 between the furnace body 201 and the process tube 202. An air inlet jacket 204 is formed between the heat insulation layer 203 and the furnace body 201. Multiple through holes 2031 are provided on the heat insulation layer 203. An air inlet 2041 is provided on the furnace body 201 for inputting cooling gas into the air inlet jacket 204. Multiple heaters 205 are fixedly disposed on the inner wall of the heat insulation layer 203. A heat exchange chamber 206 is provided between the heat insulation layer 203 and the process tube 202. The air inlet jacket 204 and the heat exchange chamber 206 are connected through multiple through holes 2031. An exhaust port 2032 is also provided on the heat insulation layer 203 for communicating with the heat exchange chamber 206 to output cooling gas. Multiple temperature sensors 207 are sequentially arranged along the axis of the process tube 202. Each temperature sensor 207 corresponds to one of the heaters 205, and one temperature sensor 207 and one heater 205 correspond to a temperature control zone within the furnace body 201.

[0020] The process tube 202 can house a crystal boat 213, which can hold multiple wafers. Heating or cooling of the wafers within the process tube 202 can be achieved by cooling or heating the heat exchange cavity. Figure 2 As shown, within the heat exchange chamber, five heaters 205 are arranged sequentially from top to bottom along the axis of the process tube 202. These heaters, such as heating wires, can be wound around the inner wall of the insulation layer 203. Furthermore, a temperature sensor 207 is positioned opposite each heater 205 on the inner side of the process tube 202. The entire furnace interior is divided into five temperature control zones from top to bottom, each corresponding to one temperature sensor and one heater. When the process step's temperature control mode indicates heating, the temperature of the corresponding temperature control zone can be collected by the temperature sensor 207, and the corresponding temperature control zone can be heated by the heater 205. During the heating process, the heater 205 heats the heat exchange chamber, which in turn heats the process tube 202, thereby achieving heating of the wafer within the process tube 202. Taking the first temperature control area located at the top of the furnace body 201 as an example, the temperature in the first temperature control area can be collected by the temperature sensor 207, and the heater 205 in the first temperature control area can be controlled to heat the first temperature control area according to the collected temperature and the preset target temperature.

[0021] In one embodiment, the air inlet 2041 can be connected to an air source via an air supply valve (not shown in the figure). When the air supply valve is opened, the cooling gas in the air source can first enter the air inlet jacket 204, and then enter the heat exchange chamber 206 through multiple through holes 2031. An exhaust pipe 208 can be provided at the top of the furnace body 201, and the heat exchange chamber 206 and the exhaust pipe 208 are connected through an exhaust port 2032.

[0022] Optionally, the exhaust pipe 208 is sequentially equipped with an exhaust damper 209, a heat exchanger 210, an exhaust valve 211, and an exhaust fan 212. By controlling the opening of the gas supply valve, exhaust damper 209, and exhaust valve 211, and starting the exhaust fan 212 and heat exchanger 210, cooling gas from the gas source is input into the air inlet jacket 204 through the air inlet 204, and enters the heat exchange chamber 206 through multiple through holes 2031 in the direction shown by the arrows in the figure, cooling the process tube 202 and thus cooling the wafer inside the process tube 202. Under the action of the exhaust fan 212, the cooling gas entering the heat exchange chamber 206 is output from the exhaust port 2032, enters the exhaust pipe 208, is cooled by the heat exchanger 210, and is then discharged from the exhaust fan 212.

[0023] To address the above problems, embodiments of the present invention also provide a temperature compensation method. For example... Figure 3 As shown, Figure 3 This embodiment illustrates a flowchart of a temperature compensation method. The method is applied to a controller in a semiconductor process equipment, which has multiple temperature control zones. Each temperature control zone is equipped with a corresponding heater and temperature sensor. The method may include the following steps:

[0024] Step 301: Obtain the temperature control method and temperature control configuration parameters for the current process step.

[0025] In this embodiment, the temperature compensation method can be implemented by a controller in the semiconductor process equipment. The controller, such as a Programmable Logic Controller (PLC), is connected to a lower-level machine in the semiconductor process equipment and can receive the temperature control method and temperature control configuration parameters for the current process step sent by the lower-level machine. For example, the lower-level machine is connected to a higher-level machine, which can obtain a process recipe from the higher-level machine. The process recipe includes configuration parameters for multiple process steps. Some or all of the process steps' configuration parameters include temperature control methods and temperature control configuration parameters. The temperature control method instructs the controller to control the semiconductor process equipment to perform heating, holding, or cooling. The temperature control configuration parameters control the heating rate during heating, the cooling rate during cooling, the target temperature during holding, and the heating and cooling durations, etc. The temperature control method can be a temperature control command; different temperature control commands correspond to different temperature control methods. For example, a heating command instructs the controller to heat up, a cooling command instructs the controller to cool down, and a holding command instructs the controller to hold. For the heating process, the temperature control configuration parameters may include heating duration, heating termination temperature, and heating rate. For the cooling process, the temperature control configuration parameters may include cooling duration, cooling termination temperature, and cooling rate. The specific types of temperature control methods and configuration parameters can be set according to requirements, and this embodiment does not impose any restrictions on them. It should be noted that the configuration parameters for each process step may also include the pressure during the process, the type of gas introduced into the process pipe, and the gas flow rate, etc. The specific parameters configured in each process step may include, but are not limited to, the examples mentioned above, and this embodiment does not impose any restrictions on them.

[0026] In practical applications, after obtaining the process recipe from the host computer, the lower-level machine can sequentially retrieve the configuration parameters for each process step in the recipe, according to the order of the multiple process steps, and send these parameters to the controller. Upon receiving the configuration parameters from the lower-level machine, the controller can control the semiconductor processing equipment to process the wafer. The current process step corresponds to the process step for which the controller currently receives the configuration parameters. If the configuration parameters include a temperature control method and temperature control configuration parameters, the controller can control the semiconductor processing equipment to heat up, cool down, or maintain the temperature to process the wafer within the equipment.

[0027] Step 302: When the temperature control mode indicates cooling, obtain the actual temperature of the temperature control area through the temperature sensor.

[0028] Step 303: Based on the actual temperature of the temperature control area and the temperature control configuration parameters, determine the target temperature of the temperature control area during the cooling process, and determine the target temperature control area from multiple temperature control areas whose actual temperature is lower than the target temperature.

[0029] In this embodiment, after the controller obtains the temperature control mode, if the temperature control mode indicates cooling, the controller can obtain the actual temperature of the temperature control area where each temperature sensor is located through the temperature sensor set in each temperature control area. After obtaining the actual temperature, the controller can calculate and determine the target temperature of the temperature control area during the cooling process based on the actual temperature and the temperature control configuration parameters.

[0030] Optionally, the step of determining the target temperature of the temperature-controlled area during the cooling process based on the actual temperature of the temperature-controlled area and the temperature control configuration parameters may include:

[0031] The actual temperature collected by the temperature sensor for the first time is used as the starting temperature for cooling in the temperature control zone.

[0032] The total cooling amplitude is determined based on the cooling rate parameter and the cooling time of the temperature control zone;

[0033] The difference between the initial cooling temperature and the total cooling rate is used as the target temperature.

[0034] In one embodiment, the cooling rate parameter may include the cooling duration and the cooling termination temperature. The user can set the cooling duration and cooling termination temperature in the configuration parameters of the process step. Figure 4 As shown, Figure 4 This embodiment shows a schematic diagram of the cooling curve of a semiconductor process equipment. Figure 2 Taking the first temperature control zone as an example, when the controller determines the temperature control mode and indicates cooling, it can obtain the actual temperature within the first temperature control zone through the temperature sensor within the first temperature control zone. At this time, the obtained actual temperature can be used as the cooling start temperature of the first temperature control zone. Figure 4 In the first temperature Y1, the cooling initiation temperature is given; in the second temperature Y2, the cooling termination temperature is included in the temperature control rate parameters. The cooling initiation temperatures of multiple temperature control zones are the same or similar. Figure 4 The first time T1 in the figure is the time when the controller first obtains the actual temperature after determining the temperature control mode to execute cooling, which is also the cooling start time. Figure 4In this context, the second time T2 represents the time it takes to reach the cooling termination temperature, and the time difference between the second time T2 and the first time T1 is the cooling duration. The controller can calculate the total cooling amplitude during the cooling process based on the starting and ending temperatures, and then calculate the cooling rate based on the ratio of the total cooling amplitude to the cooling duration. The cooling rate is (Y1-Y2) / (T2-T1). During the cooling process, the controller can calculate the current temperature drop based on the time difference between the current time and the cooling start time. For example, if the time difference between the first time T1 and the cooling start time is 0, then the current temperature drop is 0. If the time difference between the third cooling time T3 and the cooling start time is (T3-T1), then the current temperature drop is (Y1-Y2) / (T2-T1)×(T3-T1). Furthermore, the target temperature for the third time T3 can be determined as T1-((Y1-Y2) / (T2-T1)×(T3-T1)). Similarly, the target temperature of each temperature control zone at the third time T3 can be calculated.

[0035] In one embodiment, the user can set the cooling rate during the cooling process according to process requirements, configuring the cooling rate in the temperature control configuration parameters. When calculating the target temperature, the controller can directly calculate and determine the target temperature based on the cooling rate and time difference. Figure 4 As shown, if the cooling rate is Z, then at the third time T3, the target temperature is T1-T3×Z. The specific type and form of the temperature control configuration parameters can be set according to requirements, and this embodiment does not impose any restrictions on this. It should be noted that, in the process of determining the target temperature, the controller can calculate the target temperature of the temperature control area every preset time interval starting from the cooling start time, or it can calculate the target temperature of the temperature control area every time the actual temperature is obtained from the temperature sensor.

[0036] In this embodiment, after acquiring the target temperature and actual temperature of the temperature control zone, the controller can compare the target temperature and actual temperature of each temperature control zone separately to determine the target temperature control zone where the actual temperature is lower than the target temperature from multiple temperature control zones. Figure 2 Taking the first temperature control area as an example, at the third time T3, if the actual temperature collected by the temperature sensor corresponding to the first temperature control area is lower than the calculated target temperature of the first temperature control area, then the first temperature control area is determined to be the target temperature control area.

[0037] Step 304: Control the heater in the target temperature control area to heat the target temperature control area so that the actual temperature of the target temperature control area reaches the target temperature of the target temperature control area.

[0038] In this embodiment, after determining the target temperature control area, the heater within the target temperature control area can be controlled to heat the target temperature control area. For example, the controller can run an automatic control algorithm based on the temperature difference between the actual temperature of the target temperature control area and the target temperature to calculate the heating power of the heater within the target temperature control area, and control the heater to heat the target temperature control area. Optionally, the automatic control algorithm can employ a Proportional-Integral-Differential (PID) algorithm, where the target temperature is represented by the symbol Setpoint, the actual temperature by the symbol Inner, and the heating power of the heater by the symbol Power. Then, Power = func(Setpoint-Inner) = Pfun(Setpoint-Inner) + Ifun(Setpoint–Inner) + Dfun(Setpoint-Inner). Here, func represents the PID algorithm, Pfun represents the proportional term in the PID algorithm, Ifun represents the integral term in the PID algorithm, and Dfun represents the derivative term in the PID algorithm. After calculating the heating power of the heater, the controller can control the heater to output the corresponding heating power to heat the target temperature control area, so that the actual temperature in the target temperature control area reaches the target temperature of the target temperature control area.

[0039] In this context, "actual temperature reaching the target temperature" means that the actual temperature is equal to or close to the target temperature, meaning the actual temperature can fluctuate around the target temperature. For example, a preset difference can be added to the target temperature to reach the upper temperature limit, and a preset difference can be reduced to reach the lower temperature limit. When controlling the heater to heat the target temperature control area, the controller can control the heater's heating power, causing the actual temperature within the target temperature control area to fluctuate between the upper and lower temperature limits. Since the actual temperature within the target temperature control area cannot be completely controlled to the target temperature during the temperature control process, fluctuations around the target temperature are allowed. Users can adjust various parameters in the PID algorithm to control the temperature fluctuation range. Other algorithms can also be used for automatic control; this embodiment does not impose any restrictions on this.

[0040] In this embodiment, when the actual temperature within the target temperature control area is lower than the target temperature, the heater within the target temperature control area is controlled to heat, which allows the actual temperature within the target temperature control area to fluctuate around the target temperature, thereby ensuring consistency in the cooling process across multiple temperature control areas. Combined with... Figure 1 and Figure 4 As shown, at the third time point Y3, the actual temperature within the temperature control area is lower than the target temperature. At this time, controlling the heater to heat the temperature control area can stabilize the actual temperature within multiple temperature control areas around the target temperature. For example... Figure 5As shown, Figure 5 This diagram illustrates the heating power of a heater provided in this embodiment. Figure 4 and Figure 5 As shown, during the entire cooling process, heaters in different temperature control zones are controlled at different times to heat their respective zones with different heating powers. Since the actual temperature of each temperature control zone fluctuates around the target temperature during the cooling process, the actual cooling curve of each temperature control zone is close to the target cooling curve, and part or all of the actual cooling curve overlaps with the target cooling curve. Throughout the entire cooling process, the temperature values ​​of multiple temperature control zones are the same or close at the same time, which can maintain the consistency of cooling.

[0041] In summary, in this embodiment of the invention, the controller acquires the temperature control mode and temperature control configuration parameters of the current process step. When the temperature control mode indicates cooling, it acquires the actual temperature of the temperature-controlled area through a temperature sensor. Based on the actual temperature of the temperature-controlled area and the temperature control configuration parameters, it determines the target temperature of the temperature-controlled area during the cooling process. It then identifies a target temperature-controlled area from multiple temperature-controlled areas whose actual temperature is lower than the target temperature. The controller then controls the heater within the target temperature-controlled area to heat the target temperature-controlled area, bringing its actual temperature up to the target temperature. During the cooling process of multiple temperature-controlled areas, when the actual temperature of a temperature-controlled area is lower than the target temperature, the controller controls the heater to heat the temperature-controlled area, supplementing the temperature within the area and maintaining a consistent temperature across the multiple temperature-controlled areas.

[0042] Optionally, prior to step 304, the method may further include:

[0043] The difference between the actual temperature of the target temperature control zone and the target temperature is determined to be greater than the preset trigger temperature difference.

[0044] In one embodiment, the user can preset a trigger temperature difference. When the difference between the actual temperature and the target temperature within the target temperature control area is greater than the preset trigger temperature difference, it indicates a significant difference between the target and actual temperatures, requiring heating of the target temperature control area. Conversely, when the difference between the actual and target temperatures is less than or equal to the preset trigger temperature difference, it indicates a small difference between the target and actual temperatures, requiring no heating of the target temperature control area. For example, when the controller determines that the actual temperature of the first temperature control area is lower than that of the target temperature control area, if the difference between the actual and target temperatures of the first temperature control area is greater than the preset trigger temperature difference, step 304 is executed to heat the first temperature control area. Conversely, if the difference between the actual and target temperatures within the first temperature control area is less than or equal to the preset trigger temperature difference, step 304 is not executed, and the first temperature control area is not heated.

[0045] In practical applications, users can set the specific value of the trigger temperature difference according to actual needs. When the difference between the target temperature and the actual temperature is greater than the trigger temperature difference, the controller will trigger the heating of the target temperature control area. This can avoid starting the heater when the difference between the actual temperature and the target temperature is small, thus avoiding increasing the cooling time of the temperature control area.

[0046] Optionally, the method may further include:

[0047] The heating power of the heater is controlled to not exceed the preset safe power limit.

[0048] In one embodiment, the user can set a safe power limit for the heater within the temperature control area to prevent excessive heating power from damaging the semiconductor process equipment. Referring to the above example, the safe power limit can be set to 80% of the maximum heating power. During the process of controlling the heater within the target temperature control area to heat the target temperature control area, if the calculated heating power exceeds 80% of the maximum heating power, the controller can control the heater to operate at 80% of the maximum heating power. The specific value of the safe power limit can be set according to requirements; this embodiment does not impose any limitations on it.

[0049] In practical applications, excessive heating power from the heater can damage semiconductor processing equipment. By controlling the heater's heating power to remain within the safe power limit during the heating process, damage to the semiconductor processing equipment can be avoided.

[0050] Optionally, the method may further include:

[0051] The heater is stopped when the actual temperature in the temperature-controlled zone reaches the cooling termination temperature.

[0052] In this embodiment, when the temperature control configuration parameters include a cooling termination temperature, if the controller detects that the actual temperature of a certain temperature control area has reached the target temperature Y2 during the cooling process of the semiconductor process equipment, it can control the heater in that temperature control area to stop heating the temperature control area and avoid temperature fluctuations in the temperature control area.

[0053] Optionally, the method may further include:

[0054] When the temperature control mode indicates cooling, the cooling mechanism is activated to cool the temperature-controlled area.

[0055] Combination Figure 1As shown, the cooling mechanism consists of an air inlet jacket, heat exchange chamber, exhaust pipe, exhaust damper, heat exchanger, exhaust pipe valve, and exhaust fan. When the temperature control mode is cooling, the controller can open the air supply valve, exhaust damper 209, exhaust valve 211, and exhaust fan 212 to activate the cooling mechanism, introducing cooling gas into the heat exchange chamber 206. Under the action of the exhaust fan, the cooling gas circulates within the heat exchange chamber, cooling the process pipes and thus achieving cooling of each temperature-controlled area.

[0056] Optionally, the method may further include:

[0057] If the actual cooling rate in multiple temperature control zones is greater than the target cooling rate indicated by the cooling rate parameter, reduce the output power of the cooling mechanism.

[0058] In one embodiment, the controller can monitor the cooling rate of each temperature-controlled zone and determine whether the cooling rate of the temperature-controlled zone is greater than the target cooling rate. Referring to the above example, the target cooling rate is... Figure 1 and Figure 4 The slope of the target cooling curve 401 is given, and the target cooling rate is (Y1-Y2) / (T2-T1). At the third time point T3, the actual cooling rate is (Y1-Y3) / (T3-T1). At each time point, the controller can calculate the cooling rate of the temperature-controlled area. When the cooling rate of all temperature-controlled areas is greater than the target cooling rate, it indicates that the cooling rate of the entire process tube is too fast. In this case, the output power of the exhaust fan can be reduced and / or the opening of the air supply valve can be decreased to reduce the flow rate of cooling gas in the heat exchange chamber, reduce the output power of the cooling mechanism, and thus reduce the cooling rate of the temperature-controlled area.

[0059] In this embodiment of the invention, when the actual cooling rate of multiple temperature control zones is greater than the target cooling rate indicated by the cooling rate parameter, reducing the output power of the cooling mechanism can prevent the semiconductor process equipment from cooling down too quickly.

[0060] This embodiment also provides a semiconductor process apparatus, which includes a controller and multiple temperature control zones. Each temperature control zone is equipped with a corresponding heater and a temperature sensor. The controller is configured to execute the method described in the above embodiment.

[0061] Optionally, the controller includes multiple temperature control modules, each corresponding to a temperature control area and connected to a temperature sensor and heater within the corresponding temperature control area. The temperature control module is used to perform the following steps when the temperature control mode is cooling: obtaining the actual temperature of the corresponding temperature control area, determining the target temperature of the corresponding temperature control area, and controlling the heater within the corresponding temperature control area to heat the corresponding temperature control area.

[0062] In one embodiment, the controller includes multiple temperature control modules, each corresponding to a temperature control area and connected to a temperature sensor and a heater within the corresponding temperature control area. When the temperature control mode indicates cooling, each temperature control module can respectively perform the steps of obtaining the actual temperature of the corresponding temperature control area, determining the target temperature of the corresponding temperature control area, and controlling the heater within the corresponding temperature control area to heat the corresponding temperature control area.

[0063] like Figure 2 As shown, each temperature control zone corresponds to a temperature control module. Each module is connected to the heater and temperature sensor within its respective zone. After receiving the temperature control mode and configuration parameters from the lower-level controller, the controller sends these parameters to each temperature control module. Upon receiving these parameters, the module determines to begin cooling based on the temperature control mode and then obtains the actual temperature of its zone from the temperature sensor. Based on the actual temperature and the configuration parameters, the module calculates the target temperature for the cooling process. If the actual temperature is lower than the target temperature, the corresponding zone is designated as the target zone, and the heater in that zone is controlled to heat the zone. In practical applications, the temperature control module can be integrated into the controller or located externally, separate from the controller.

[0064] For an understanding of semiconductor process equipment, please refer to the examples above; this embodiment will not elaborate further.

[0065] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the embodiments of the present invention.

[0066] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or mobile device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or mobile device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or mobile device that includes said element.

[0067] The temperature compensation method and semiconductor process equipment provided in the embodiments of the present invention have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of the embodiments of the present invention. The descriptions of the embodiments above are only for the purpose of helping to understand the methods and core ideas of the embodiments of the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of the embodiments of the present invention. Therefore, the content of this specification should not be construed as a limitation on the embodiments of the present invention.

Claims

1. A temperature compensation method, characterized in that, A controller is used in semiconductor process equipment, wherein the semiconductor process equipment is provided with multiple temperature control zones; each temperature control zone is provided with a corresponding heater and a temperature sensor; when the semiconductor process equipment is in a process step, the heater is used to heat the corresponding temperature control zone; When the semiconductor process equipment is undergoing a cooling process, the temperature compensation method includes: Obtain the temperature control method and temperature control configuration parameters for the current process step; When the temperature control mode indicates cooling, the actual temperature of the temperature control area is obtained through the temperature sensor. Based on the actual temperature of the temperature-controlled area and the temperature-controlled configuration parameters, the target temperature of the temperature-controlled area during the cooling process is determined, and a target temperature-controlled area with an actual temperature lower than the target temperature is determined from the plurality of temperature-controlled areas; the cooling process is carried out at a fixed cooling rate. The heaters within the target temperature control area are controlled to heat the target temperature control area so that the actual temperature of the target temperature control area reaches the target temperature of the target temperature control area; the heating power during heating is determined based on the temperature difference between the actual temperature of the temperature control area and the target temperature; heaters in different temperature control areas heat their respective temperature control areas with different heating powers; the heaters are also used to heat the target temperature control area when the semiconductor process equipment is in the cooling process.

2. The method according to claim 1, characterized in that, Before the heater in the controlled target temperature control area heats the target temperature control area, the method further includes: The difference between the actual temperature of the target temperature control zone and the target temperature is determined to be greater than the preset trigger temperature difference.

3. The method according to claim 1, characterized in that, When the heater in the controlled target temperature control area heats the target temperature control area, it includes: The heating power of the heater is controlled to not exceed the preset safe power limit.

4. The method according to claim 1, characterized in that, The temperature control configuration parameters include a cooling rate parameter; determining the target temperature of the temperature control area during the cooling process based on the actual temperature of the temperature control area and the temperature control configuration parameters includes: The actual temperature collected by the temperature sensor for the first time is taken as the starting temperature for cooling of the temperature control zone. The total cooling amplitude is determined based on the cooling rate parameter and the cooling time of the temperature control zone; The difference between the initial cooling temperature and the total cooling range is taken as the target temperature.

5. The method according to claim 1, characterized in that, The semiconductor process equipment further includes a cooling mechanism; the method further includes: When the temperature control mode indicates cooling, the cooling mechanism is activated to cool the temperature-controlled area.

6. The method according to claim 5, characterized in that, The temperature control configuration parameters include a cooling rate parameter; the method further includes: If the actual cooling rate of the multiple temperature control zones is greater than the target cooling rate indicated by the cooling rate parameter, the output power of the cooling mechanism is reduced.

7. The method according to any one of claims 1-6, characterized in that, The temperature control configuration parameters also include a cooling termination temperature; the method further includes: When the actual temperature in the temperature control zone reaches the cooling termination temperature, the heater is stopped.

8. A semiconductor process apparatus, characterized in that, The semiconductor process equipment includes a controller, and the semiconductor process equipment is further provided with multiple temperature control zones; each temperature control zone is provided with a corresponding heater and a temperature sensor; the controller is configured to perform the temperature compensation method as described in any one of claims 1-7.

9. The semiconductor process equipment according to claim 8, characterized in that, The controller includes multiple temperature control modules, each corresponding to a temperature control zone and connected to a temperature sensor and heater within the corresponding temperature control zone. When the temperature control mode indicates cooling, the controller controls the temperature control module to perform the following steps: obtaining the actual temperature of the corresponding temperature control zone, determining the target temperature of the corresponding temperature control zone, and controlling the heater within the temperature control zone to heat the temperature control zone.

10. The semiconductor process equipment according to claim 8 or 9, characterized in that, The semiconductor process equipment includes a furnace body and a process tube disposed within the furnace body; the plurality of temperature control zones are arranged sequentially along the axis of the process tube; An insulation layer is provided between the furnace body and the process pipe, surrounding the process pipe. An air inlet jacket is formed between the insulation layer and the furnace body. The insulation layer has multiple through holes, and the furnace body has an air inlet for inputting cooling gas into the air inlet jacket. Multiple heaters are fixedly installed on the inner wall of the insulation layer, and a heat exchange chamber is provided between the insulation layer and the process pipe. The air inlet jacket and the heat exchange chamber are connected through the multiple through holes. The insulation layer also has an exhaust port for communicating with the heat exchange chamber to output cooling gas.

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